WO2020124892A1 - 一种柔性显示面板及其制作方法 - Google Patents
一种柔性显示面板及其制作方法 Download PDFInfo
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- WO2020124892A1 WO2020124892A1 PCT/CN2019/082622 CN2019082622W WO2020124892A1 WO 2020124892 A1 WO2020124892 A1 WO 2020124892A1 CN 2019082622 W CN2019082622 W CN 2019082622W WO 2020124892 A1 WO2020124892 A1 WO 2020124892A1
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- display panel
- flexible display
- substrate
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- photosensitive material
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims abstract description 52
- 239000000872 buffer Substances 0.000 claims abstract description 33
- 238000005452 bending Methods 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 238000005538 encapsulation Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 15
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000009499 grossing Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to the field of display technology, in particular to a flexible display panel and a manufacturing method thereof.
- Organic light emitting diode (Organic Light Emitting Display, OLED) has the advantages of self-luminous, fast response, high contrast, and flexible display. It is recognized by the industry as the most promising next-generation flat panel display technology.
- the current flexible display devices generally face problems such as poor bending resistance and low reliability, especially under the condition of a small radius of curvature, it is easy to cause excessive film stress, resulting in display problems.
- a flexible display panel including:
- a thin film transistor substrate provided on the base
- a light emitting layer provided on the thin film transistor substrate.
- An encapsulation layer provided on the light-emitting layer
- a bending area is provided at the display area of the flexible display panel, and a wavy buffer structure is provided at the bending area on the side of the substrate away from the thin film transistor substrate; Continuous structure; the thickness of the substrate is 1-15 microns.
- the buffer structure includes a plurality of mutually independent grooves.
- a flexible display panel including:
- a thin film transistor substrate provided on the base
- a light emitting layer provided on the thin film transistor substrate.
- An encapsulation layer provided on the light-emitting layer
- a bending area is provided at the display area of the flexible display panel, and a wavy buffer structure is provided at the bending area on the side of the base away from the thin film transistor substrate.
- the buffer structure is a discontinuous structure.
- the buffer structure includes a plurality of mutually independent grooves.
- the thickness of the substrate is 1-15 microns.
- the invention also provides a method for manufacturing a flexible display panel, including the following steps:
- the substrate is placed in a stripping solution to remove the photosensitive material layer.
- the method for manufacturing the flexible display panel further includes:
- the buffer structure includes a plurality of mutually independent grooves.
- the thickness of the photosensitive material layer is 1-10 microns.
- the thickness of the substrate is 1-15 microns.
- the buffer structure buffers and releases the stress generated when the film layer is bent to prevent stress concentration, thereby improving the bending resistance of the flexible display panel and reducing the bending The effect of stress on the screen during the folding process.
- FIG. 1 is a schematic diagram of a flexible display panel when it is not bent in a specific embodiment of the present invention
- FIG. 2 is a schematic diagram of a flexible display panel when it is bent in a specific embodiment of the present invention
- FIG. 3 is a schematic diagram of a manufacturing process of a flexible display panel in a specific embodiment of the present invention.
- 4 to 8 are schematic diagrams of manufacturing steps of a flexible display panel in a specific embodiment of the present invention.
- the present invention is directed to the fact that the existing flexible display devices are generally not strong in bending resistance, low in reliability, and prone to excessive film stress, leading to display problems.
- the present invention can solve the above problems.
- the flexible display panel includes a base 20 made of a flexible material, a thin film transistor substrate 40 provided on the base 20, and a thin film transistor substrate provided on the base 20
- the flexible display panel is provided with a display area and a non-display area, a bend area 70 is provided at the display area, and the base 20 is at a bend area 70 on a side away from the thin film transistor substrate 40 A wave-shaped buffer structure 21 is provided.
- the flexible display panel can be bent along the bending area 70.
- the buffer structure 21 buffers and releases the stress generated when the film layer is bent to prevent stress concentration, thereby improving the bending resistance of the flexible display panel. The influence of the stress on the screen during bending is reduced.
- the buffer structure 21 is a discontinuous structure, and the buffer structure 21 includes a plurality of mutually independent grooves.
- the thickness of the substrate 20 is 1-15 microns, and the depth of the groove is 1-10 microns.
- the present invention also provides a method for manufacturing a flexible display panel. As shown in FIG. 3, the method for manufacturing a flexible display panel includes the following steps:
- the patterned photosensitive material layer 30 is formed by exposure and development, and the buffer structure 21 is formed on the substrate 20 by using the patterned photosensitive material layer 30. At the same time, the photosensitive material layer 30 is easy to remove, and the fabrication is simple and efficient.
- the manufacturing material of the substrate 10 includes any one or more of electrical insulating materials such as quartz, mica and alumina.
- the manufacturing material of the photosensitive material layer 30 is an exposure-dissolving photosensitive material or an exposure cross-linking photosensitive material.
- a photosensitive material is coated on the substrate 10 to form a photosensitive material layer 30, and a patterned photosensitive material layer 30 is formed by exposure and development.
- the thickness of the photosensitive material layer 30 is 1-10 microns.
- a flexible material covering the photosensitive material layer 30 is coated on the substrate 10 to form a base 20.
- the flexible material may be polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN).
- PI polyimide
- PC polycarbonate
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- Flexible materials generally have the advantages of wide application temperature, chemical resistance, high strength, and high insulation. After coating the flexible material, the solvent and moisture in the flexible material are removed by vacuum drying and low temperature baking.
- the thickness of the substrate 20 is 1-15 microns.
- the photosensitive material layer 30 penetrates the front and rear sides of the substrate 20.
- the substrate 20 is placed in a stripping solution to remove the photosensitive material layer 30; after removing the photosensitive material layer 30, the A wave-shaped buffer structure 21 is formed on the substrate 20; after the photosensitive material layer 30 is removed, the substrate 20 is baked at a high temperature, and a thermally stable buffer structure 21 is obtained by baking at a high temperature.
- the buffer structure 21 is a discontinuous structure, and the buffer structure 21 includes a plurality of mutually independent grooves.
- the method for manufacturing the flexible display panel further includes:
- the substrate 20 subjected to the thermal stabilization treatment is placed in a flexible grinding device, and the flexible material with a high protrusion on the surface of the substrate 20 is ground away to obtain a flat surface of the substrate 20, thereby facilitating the formation of other layer structures on the substrate 20.
- a thin film transistor substrate 40, a light emitting layer 50, and a packaging layer 60 are formed on the base 20, thereby obtaining a flexible display panel.
- the base 20 is separated from the substrate 10 by laser separation.
- the beneficial effects of the present invention are: by providing a buffer structure 21 in the bending region 70, when the flexible display panel is bent, the buffer structure 21 is used to buffer and release the stress generated when the film layer is bent to prevent stress concentration, thereby improving the flexible display panel Bending resistance reduces the impact of stress on the screen during bending.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
提供一种柔性显示面板及其制作方法,柔性显示面板包括由柔性材料制成的基底(20)、设置在基底(20)上的薄膜晶体管基板(40)、设置在薄膜晶体管基板(40)上的发光层(50)以及设置在发光层(50)上的封装层(60);其中,柔性显示面板的显示区处设置有弯折区(70),基底(20)远离薄膜晶体管基板(40)的一侧上的弯折区(70)处设置有呈波浪状的缓冲结构(21)。
Description
本发明涉及显示技术领域,尤其涉及一种柔性显示面板及其制作方法。
有机发光二极管(Organic Light Emitting Display,OLED)具有自发光,响应速度快,对比度高,可实现柔性显示等优点,被业内公认为是最具潜力的下一代平板显示技术。
目前,市面上真正实现的柔性弯折产品并不多,且通常为静态弯折产品,曲率半径较大。实现动态弯折,可折叠,可卷曲的柔性弯折器件是未来重要的发展方向。
但是,目前柔性显示器件普遍面临着耐弯折性不强,可靠度低等问题,尤其是在曲率半径很小的状况下,容易出现膜层应力过大,导致出现显示问题。
目前柔性显示器件普遍面临着耐弯折性不强,可靠度低等问题,尤其是在曲率半径很小的状况下,容易出现膜层应力过大,导致出现显示问题。
一种柔性显示面板,包括:
由柔性材料制成的基底;
设置在所述基底上的薄膜晶体管基板;
设置在所述薄膜晶体管基板上的发光层;以及
设置在所述发光层上的封装层;
其中,所述柔性显示面板的显示区处设置有弯折区,所述基底远离所述薄膜晶体管基板的一侧上的弯折区处设置有呈波浪状的缓冲结构;所述缓冲结构为非连续结构;所述基底的厚度为1~15微米。
进一步的,所述缓冲结构包括多个相互独立的凹槽。
一种柔性显示面板,包括:
由柔性材料制成的基底;
设置在所述基底上的薄膜晶体管基板;
设置在所述薄膜晶体管基板上的发光层;以及
设置在所述发光层上的封装层;
其中,所述柔性显示面板的显示区处设置有弯折区,所述基底远离所述薄膜晶体管基板的一侧上的弯折区处设置有呈波浪状的缓冲结构。
进一步的,所述缓冲结构为非连续结构。
进一步的,所述缓冲结构包括多个相互独立的凹槽。
进一步的,所述基底的厚度为1~15微米。
本发明还提供一种柔性显示面板的制作方法,包括以下步骤:
S10、在基板上涂布感光材料层;
S20、对所述感光材料层进行图案化处理,形成图案化的感光材料层;
S30、在所述基板上涂布覆盖所述感光材料层的柔性材料,形成基底;
S40、去除所述感光材料层,所述基底上形成呈波浪状的缓冲结构;
S50、在所述基底上形成薄膜晶体管基板、发光层以及封装层;
S60、将所述基底与所述基板分离。
进一步的,在所述步骤S40中,将所述基底置于剥离液中,去除所述感光材料层。
进一步的,在所述步骤S40后,并且,所述步骤S50前,所述柔性显示面板的制作方法还包括:
S70、对所述基底的表面进行平整处理。
进一步的,所述缓冲结构包括多个相互独立的凹槽。
进一步的,所述感光材料层的厚度为1~10微米。
进一步的,所述基底的厚度为1~15微米。
通过在弯折区设置缓冲结构,弯折柔性显示面板时,通过缓冲结构缓冲释放膜层弯折时产生的应力,防止应力集中,从而提高柔性显示面板的耐弯折性能,减小了在弯折过程中因为应力对屏幕所产生的的影响。
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明具体实施方式中柔性显示面板未弯折时的示意图;
图2为本发明具体实施方式中柔性显示面板弯折时的示意图;
图3为本发明具体实施方式中柔性显示面板的制作流程示意图;
图4至图8为本发明具体实施方式中柔性显示面板的制作步骤示意图。
附图标记:
10、基板;20、基底;21、缓冲结构;30、感光材料层;40、薄膜晶体管基板;50、发光层;60、封装层;70、弯折区。
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
本发明针对现有的柔性显示器件普遍耐弯折性不强,可靠度低,容易出现膜层应力过大,导致出现显示问题。本发明可以解决上述问题。
一种柔性显示面板,如图1和图2所示,所述柔性显示面板包括由柔性材料制成的基底20、设置在所述基底20上的薄膜晶体管基板40、设置在所述薄膜晶体管基板40上的发光层50以及设置在所述发光层50上的封装层60。
其中,所述柔性显示面板上设置有显示区和非显示区,所述显示区处设置有弯折区70,所述基底20远离所述薄膜晶体管基板40的一侧上的弯折区70处设置有呈波浪状的缓冲结构21。
柔性显示面板可沿弯折区70进行弯折,柔性显示面板弯折时,通过缓冲结构21缓冲释放膜层弯折时产生的应力,防止应力集中,从而提高柔性显示面板的耐弯折性能,减小了在弯折过程中因为应力对屏幕所产生的的影响。
具体的,所述缓冲结构21为非连续结构,并且,所述缓冲结构21包括多个相互独立的凹槽。
具体的,所述基底20的厚度为1~15微米,所述凹槽的深度为1~10微米。
基于上述柔性显示面板,本发明还提供一种柔性显示面板的制作方法,如图3所示,所述柔性显示面板的制作方法包括以下步骤:
S10、在基板10上涂布感光材料层30;
S20、对所述感光材料层30进行图案化处理,形成图案化的感光材料层30;
S30、在所述基板10上涂布覆盖所述感光材料层30的柔性材料,形成基底20;
S40、去除所述感光材料层30,所述基底20上形成呈波浪状的缓冲结构21;
S50、在所述基底20上形成薄膜晶体管基板40、发光层50以及封装层60;
S60、将所述基底20与所述基板10分离。
利用曝光显影形成图案化的感光材料层30,利用图案化的感光材料层30在基底20上形成缓冲结构21,同时感光材料层30易于去除,制作简单高效。
其中,所述基板10的制作材料包括石英、云母和氧化铝等电绝缘材料中的任意一种或者多种。
所述感光材料层30的制作材料为曝光溶解型感光材料或者曝光交联型感光材料。
所述柔性显示面板的制作步骤如图4至图8所示。
如图4所示,在基板10上涂布感光材料,形成感光材料层30,并通过曝光显影形成图案化的感光材料层30。
其中,所述感光材料层30的厚度为1~10微米。
如图5所示,在所述基板10涂布覆盖所述感光材料层30的柔性材料,形成基底20。
其中,柔性材料可以为聚酰亚胺(PI)、聚碳酸酯(PC)、聚对苯二甲酸乙二醇酯(PET)或聚萘二甲酸乙二醇酯(PEN)。柔性材料通常具有适用温度广、耐化学腐蚀、高强度、高绝缘等优点,在涂覆柔性材料后,通过减压干燥和低温烘烤等方式去除柔性材料中的溶剂及水汽。
具体的,所述基底20的厚度为1~15微米。
需要说明的是,所述基底20成型后,所述感光材料层30贯穿所述基底20的前后两侧。
如图6所示,在所述步骤S40中,所述基底20固化后,将所述基底20置于剥离液中,去除所述感光材料层30;去除所述感光材料层30后,所述基底20上形成呈波浪状的缓冲结构21;所述感光材料层30去除后,将所述基底20进行高温烘烤,通过高温烘烤得到热稳定的缓冲结构21。
具体的,所述缓冲结构21为非连续结构,并且,所述缓冲结构21包括多个相互独立的凹槽。
进一步的,在所述步骤S40后,并且,所述步骤S50前,所述柔性显示面板的制作方法还包括:
S70、对所述基底20的表面进行平整处理。
将经过热稳定处理的基底20置于柔性研磨设备中,将基底20的表面凸起较高的柔性材料研磨掉,得到平整的基底20表面,从而便于在基底20上形成其他层结构。
如图7所示,在所述基底20上形成薄膜晶体管基板40、发光层50以及封装层60,从而得到柔性显示面板。
如图8所示,通过激光分离将所述基底20与所述基板10分离。
本发明的有益效果为:通过在弯折区70设置缓冲结构21,弯折柔性显示面板时,通过缓冲结构21缓冲释放膜层弯折时产生的应力,防止应力集中,从而提高柔性显示面板的耐弯折性能,减小了在弯折过程中因为应力对屏幕所产生的的影响。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (12)
- 一种柔性显示面板,其中,所述柔性显示面板包括:由柔性材料制成的基底;设置在所述基底上的薄膜晶体管基板;设置在所述薄膜晶体管基板上的发光层;以及设置在所述发光层上的封装层;其中,所述柔性显示面板的显示区处设置有弯折区,所述基底远离所述薄膜晶体管基板的一侧上的弯折区处设置有呈波浪状的缓冲结构;所述缓冲结构为非连续结构;所述基底的厚度为1~15微米。
- 根据权利要求1所述的柔性显示面板,其中,所述缓冲结构包括多个相互独立的凹槽。
- 一种柔性显示面板,其中,所述柔性显示面板包括:由柔性材料制成的基底;设置在所述基底上的薄膜晶体管基板;设置在所述薄膜晶体管基板上的发光层;以及设置在所述发光层上的封装层;其中,所述柔性显示面板的显示区处设置有弯折区,所述基底远离所述薄膜晶体管基板的一侧上的弯折区处设置有呈波浪状的缓冲结构。
- 根据权利要求3所述的柔性显示面板,其中,所述缓冲结构为非连续结构。
- 根据权利要求4所述的柔性显示面板,其中,所述缓冲结构包括多个相互独立的凹槽。
- 根据权利要求3所述的柔性显示面板,其中,所述基底的厚度为1~15微米。
- 一种柔性显示面板的制作方法,其中,所述柔性显示面板的制作方法包括以下步骤:S10、在基板上涂布感光材料层;S20、对所述感光材料层进行图案化处理,形成图案化的感光材料层;S30、在所述基板上涂布覆盖所述感光材料层的柔性材料,形成基底;S40、去除所述感光材料层,所述基底上形成呈波浪状的缓冲结构;S50、在所述基底上形成薄膜晶体管基板、发光层以及封装层;S60、将所述基底与所述基板分离。
- 根据权利要求7所述的柔性显示面板的制作方法,其中,在所述步骤S40中,将所述基底置于剥离液中,去除所述感光材料层。
- 根据权利要求7所述的柔性显示面板的制作方法,其中,在所述步骤S40后,并且,所述步骤S50前,所述柔性显示面板的制作方法还包括:S70、对所述基底的表面进行平整处理。
- 根据权利要求7所述的柔性显示面板的制作方法,其中,所述缓冲结构包括多个相互独立的凹槽。
- 根据权利要求7所述的柔性显示面板的制作方法,其中,所述感光材料层的厚度为1~10微米。
- 根据权利要求7所述的柔性显示面板的制作方法,其中,所述基底的厚度为1~15微米。
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CN113178133A (zh) * | 2021-05-06 | 2021-07-27 | 合肥维信诺科技有限公司 | 复合支撑膜及显示装置 |
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