WO2020113849A1 - 蒸镀腔结构及遮挡板结构 - Google Patents

蒸镀腔结构及遮挡板结构 Download PDF

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Publication number
WO2020113849A1
WO2020113849A1 PCT/CN2019/078518 CN2019078518W WO2020113849A1 WO 2020113849 A1 WO2020113849 A1 WO 2020113849A1 CN 2019078518 W CN2019078518 W CN 2019078518W WO 2020113849 A1 WO2020113849 A1 WO 2020113849A1
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Prior art keywords
shielding plates
plated
covered
expanded
secondary shielding
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PCT/CN2019/078518
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English (en)
French (fr)
Inventor
徐超
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武汉华星光电半导体显示技术有限公司
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Priority to US16/630,437 priority Critical patent/US20200313122A1/en
Publication of WO2020113849A1 publication Critical patent/WO2020113849A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Definitions

  • the present invention relates to the field of vapor deposition technology, in particular to the field of vapor deposition organic luminescent material technology.
  • Organic light emitting diode Organic Light Emitting Diode
  • OLED Organic Light Emitting Diode
  • TFT thin film transistor
  • the current method of preparing an OLED display is usually to form an organic material layer on a substrate by using an evaporation process, and to vapor-deposit small molecule organic materials onto the substrate of the panel by an evaporation machine.
  • the vapor deposition machine has a vapor deposition chamber 10 that can accommodate the substrate to be plated.
  • the vapor deposition material is sprayed from the lower nozzle 12, the nozzle opening of the nozzle 12 is small, so the vapor deposition material cannot be evenly distributed on the substrate 14, there is a baffle 100 in the vapor deposition chamber 10 between the nozzle 12 and the substrate 14.
  • the conventional shielding plate 100 is composed of a main shielding plate 102, a secondary shielding plate 104, and a supporting portion 106.
  • the main shielding plate 102 and the auxiliary shielding plate 104 are closed to spread the organic material under the shielding plate 100.
  • the organic material spreads uniformly and reaches a predetermined concentration the main shielding plate 102 and the auxiliary shielding plate 104 The separation is centered on the support portion 106 so that the organic material is deposited on the substrate 14 uniformly.
  • the vapor deposition chamber 20 also has a shielding plate 200 between the nozzle 22 and the substrate 24.
  • the shielding plate 200 is composed of a main shielding plate 202, a secondary shielding plate 204 and a supporting portion 206.
  • the main shielding plate 202 Since the area of the shielding plate 200 is large at this time, and the shielding plate 200 has only one supporting point connected to the support portion 206, the main shielding plate 202 is prone to sag the main shielding plate 202 due to the large area and heavy weight, making the main shielding block The board 202 and the sub-shielding plate 204 cannot be completely closed, causing organic materials to escape onto the substrate 24 and affecting the quality of the panel.
  • the object of the present invention is to provide a vapor deposition cavity structure, which includes a cavity body, a material nozzle and a baffle structure.
  • the material nozzle is located below the interior of the cavity, and is used to spray the raw material to be plated onto the substrate to be plated.
  • the shielding baffle structure includes a supporting portion, several supporting bars, and several auxiliary shielding baffles. The several supporting bars are connected to the supporting part.
  • the plurality of sub-shielding baffles are located between the support bars, and the plurality of sub-shielding baffles are folded and overlapped or expanded and covered by the support bars, and the plurality of sub-shielded baffles are folded and overlapped or expanded and covered,
  • the concentration of the raw material to be plated is controlled, wherein when the plurality of auxiliary shielding plates are spread and covered, each of the auxiliary shielding plates has a fan shape or a triangle shape.
  • the invention also provides a vapor deposition cavity structure, which includes a cavity body, a material nozzle and a baffle structure.
  • the material nozzle is located below the interior of the cavity, and is used to spray the raw material to be plated onto the substrate to be plated.
  • the shielding baffle structure includes a supporting portion, several supporting bars, and several auxiliary shielding baffles. The several supporting bars are connected to the supporting part.
  • the plurality of secondary shielding baffles are located between the support bars, and the plurality of secondary shielding baffles are folded and overlapped or expanded and covered by the support bars.
  • each of the secondary shielding plates has a fan shape.
  • each of the secondary shielding plates has a triangular shape.
  • each of the secondary shielding plates has the same central angle.
  • the plurality of secondary shielding plates can be folded and overlapped or expanded and covered, and the concentration of the raw material to be plated can be controlled by the folding and overlapping or expanding and covering of the plurality of secondary shielding plates.
  • the plurality of sub-shielding plates can be folded and overlapped or expanded and covered, and the concentration of the raw materials to be plated can be controlled by the folding and overlapping or expanding and covering of the plurality of sub-shielding plates.
  • concentration reaches a preset value
  • the plurality of sub-shielding plates are folded and overlapped around the supporting portion, so that the raw material to be plated is evaporated onto the substrate to be plated; when the concentration of the raw material to be plated is not up to At a preset value, the plurality of secondary shielding baffles are spread and covered with the support portion as a center, to prevent the raw material to be plated from being vapor-deposited onto the substrate to be plated.
  • the invention also provides a shielding plate structure, which comprises a supporting part, a plurality of supporting bars and a plurality of auxiliary shielding plates.
  • the several supporting bars are connected to the supporting part.
  • the plurality of secondary shielding baffles are located between the support bars, and the plurality of secondary shielding baffles are folded and overlapped or expanded and covered by the support bars.
  • each of the secondary shielding plates has a fan shape.
  • each of the secondary shielding plates has a triangular shape.
  • each of the secondary shielding plates has the same central angle.
  • the advantage of the present invention is that, by using the vapor deposition chamber structure and the shielding baffle structure of the present invention, the weight of the shielding baffle can be distributed on several secondary shielding baffles, and then support the several secondary shielding baffles through the support bars to avoid manufacturing.
  • the shading plate in the vapor deposition machine is too heavy and sags, causing the material to escape.
  • FIG. 1 is a schematic structural diagram of a prior art evaporation chamber
  • FIG. 2 is a schematic diagram showing the structure of the prior art evaporation chamber when the main baffle plate sags;
  • FIG. 3 illustrates the structure of the evaporation chamber of the first embodiment of the present invention
  • FIG. 4 is a side view of the first embodiment of the shutter after folding and folding
  • FIG. 5 illustrates the structure of the evaporation chamber of the second embodiment of the present invention
  • FIG. 6 is a side view of the second embodiment of the shielding plate after folding and folding.
  • FIG. 3 shows the structure of the evaporation chamber of the first embodiment of the present invention.
  • the vapor deposition chamber 30 has a nozzle 32 and a substrate 34 and a shielding plate 300 located therebetween.
  • the shielding plate 300 has a plurality of auxiliary shielding plates 320, a plurality of support bars 340 and a supporting portion 360.
  • the area of the mask required by the shielding plate 300 is composed of a plurality of secondary shielding plates 320, each of the secondary shielding plates 320 is fan-shaped, and all the secondary shielding plates 320 form a circular shielding plate 300.
  • the shapes of the baffle plate 300 and the sub-baffle plate 320 are only examples and are not intended to limit the present invention.
  • the baffle plate 300 and the sub-baffle plate 320 that can cover the cross section of the vapor deposition chamber 30 or can effectively block the vapor deposition material,
  • the shape and size of any sub-shielding plate 320 and the shielding plate 300 formed by it are within the scope of the present invention.
  • the shielding plate 300 is composed of several secondary shielding plates 320, and each secondary shielding plate 320 has a supporting bar 340 between them.
  • the support bar 340 is used to carry the weight of the sub-shielding plate 320, and is connected to the supporting portion 360, wherein one end of each supporting bar 340 is individually fixed on the supporting portion 360, so that the weight of the shielding plate 300 is distributed to multiple
  • a plurality of supporting bars 340 share the weight of the shielding plate 300, so the weight to be shared by each supporting bar 340 can be reduced.
  • the prior art baffle consists of only two baffles (primary baffle and secondary baffle), making the main baffle too large and heavy in weight This causes the main baffle to sag, which in turn leads to the problem of organic material escaping.
  • FIG. 4 is a side view of the first embodiment (in FIG. 3) after the folding and folding of the shielding plate 300.
  • each sub-shield plate 320 will overlap so that the shutter plate 300 only has the area of the straight support bar 340, so the organic material will be vapor-deposited through the shutter plate 300 Onto the substrate 34.
  • the shielding plate 300 is expanded and covered as shown in FIG. 3 to prevent the organic material that has not reached the ideal value from escaping onto the substrate 34 and affecting the quality of the display panel.
  • the secondary shielding plates 320 have the same figure center angle a, so that it is convenient to control the opening or closing angle of each supporting bar 340, and the opening and closing of the shielding plate 300 can be controlled more easily.
  • FIG. 5 is a structure of a vapor deposition chamber according to a second embodiment of the present invention.
  • the vapor deposition chamber 50 of the second embodiment also includes a nozzle 52, a substrate 54 and a shielding plate 500.
  • the shielding plate 500 includes a plurality of auxiliary shielding plates 520, a plurality of support bars 540 and a supporting portion 560.
  • the shielding plate 500 is also composed of several secondary shielding plates 520, and each shielding plate 520 has a supporting bar 540 between them, and one end of each supporting bar 540 is individually connected to the supporting portion 560 to support the weight of the secondary shielding plate 520.
  • the shape of the secondary baffle 520 is triangular.
  • the triangle is simpler than the fan-shaped structure and size, which can simplify the production of each secondary baffle 520 and reduce the complexity of the arc length and arc in the fan.
  • Non-linear parameters Preferably, the secondary shielding plates 520 have the same center angle b, so that it is convenient to control the opening or closing angle of each supporting bar, and the opening and closing of the shielding plate 500 can be controlled more easily.
  • FIG. 6 is a side view of the second embodiment of the shutter after folding and folding.
  • the shielding plate 500 expands and covers to prevent the organic material from escaping onto the substrate 54.
  • the shielding plate 520 is folded and overlapped by controlling the support bar 540.
  • the shielding plate 500 is folded and overlapped, the horizontal surface of the shielding plate 500 only has support The strips 540 are folded to the overlapped width, so the organic material can be evaporated onto the substrate 54 through the shielding plate 500.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种蒸镀腔结构，包含腔体（30）、材料喷嘴（32）以及遮挡板（300）结构。材料喷嘴（32）位于所述腔体（30）内部下方，用来喷出欲镀原料至待镀基板（34）。遮挡板（300）包含支撑部（360）、数个支撑条（340）以及数个副遮挡板（320）。数个副遮挡板（320）位于支撑条（340）之间，数个副遮挡板（320）通过支撑条（340）收合重叠或展开覆盖。还包括一种遮挡板（300）结构。

Description

蒸镀腔结构及遮挡板结构 技术领域
本发明涉及蒸镀技术领域，尤其是涉及蒸镀有机发光材料技术的领域。
 背景技术
有机发光二极体(Organic Light Emitting Diode, OLED)显示器具有亮度高、反应快、耗能低、具柔软性等优点，因此逐渐成为显示领域发展的重点技术。因上述优点，薄膜晶体管(Thin film transistor, TFT)显示器与OLED显示器相比，更适合用于制备大尺寸、薄型、柔性、透明及双面显示的显示器。
目前制备OLED显示器的方式通常是利用蒸镀工艺在基板上形成有机材料层，通过蒸镀机将小分子的有机材料蒸镀至面板的基板上。请参考图1，蒸镀机具有可容纳待镀基板的蒸镀腔10，蒸镀材料由下方喷嘴12喷出时，由于喷嘴12的喷嘴口较小，因此蒸镀材料会无法均匀分布于基板14上，因此蒸镀腔10中具有遮挡板100位于喷嘴12与基板14之间。现有的遮挡板100由主遮挡板102、副遮挡板104及支撑部106组成。当喷嘴12刚喷出有机材料时，主遮挡板102与副遮挡板104闭合使有机材料在遮挡板100下方扩散，当有机材料扩散均匀且达预定浓度时，主遮挡板102与副遮挡板104以支撑部106为中心分离使有机材料均匀地蒸镀到基板14上。
 技术问题
然而当制备大尺寸面板时，蒸镀机中的蒸镀腔直径也较大，此时也需要面积较大的遮挡板。如图2所示，蒸镀腔20同样具有位于喷嘴22与基板24之间的遮挡板200，遮挡板200由主遮挡板202、副遮挡板204及支撑部206所组成。由于此时遮挡板200的面积较大，而遮挡板200只有一个与支撑部206相连的支撑点，因此主遮挡板202就容易因面积大、重量重而使主遮挡板202下垂，使得主遮挡板202与副遮挡板204无法完全闭合，导致有机材料逸散到基板24上而影响面板的品质。
因此，需要一种用于蒸镀机中的遮挡板结构，来解决在制备大尺寸面板时，遮挡板只具有单一支撑点使得支撑力不足导致主遮挡板下垂的问题。
 技术解决方案
本发明的目的在于提供一种蒸镀腔结构，包含腔体、材料喷嘴以及遮挡板结构。所述材料喷嘴位于所述腔体内部下方，用来喷出欲镀原料至待镀基板。所述遮挡板结构包含支撑部、数个支撑条以及数个副遮挡板。所述数个支撑条连接所述支撑部。所述数个副遮挡板位于所述支撑条之间，所述数个副遮挡板通过所述支撑条收合重叠或展开覆盖，通过所述数个副遮挡板的收合重叠或展开覆盖，控制所述欲镀原料的浓度，其中所述数个副遮挡板展开覆盖时，每一个所述副遮挡板形状为扇形或三角形。
本发明另提供一种蒸镀腔结构，包含腔体、材料喷嘴以及遮挡板结构。所述材料喷嘴位于所述腔体内部下方，用来喷出欲镀原料至待镀基板。所述遮挡板结构包含支撑部、数个支撑条以及数个副遮挡板。所述数个支撑条连接所述支撑部。所述数个副遮挡板位于所述支撑条之间，所述数个副遮挡板通过所述支撑条收合重叠或展开覆盖。
较佳地，当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板形状为扇形。
较佳地，当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板形状为三角形。
较佳地，当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板具有相同的圆心角。
较佳地，所述数个副遮挡板可以收合重叠或展开覆盖，通过所述数个副遮挡板的收合重叠或展开覆盖，控制所述欲镀原料的浓度。
较佳地，所述数个副遮挡板可以收合重叠或展开覆盖，通过所述数个副遮挡板的收合重叠或展开覆盖，控制所述欲镀原料的浓度，当所述欲镀原料浓度达预设值时，所述数个副遮挡板以所述支撑部为中心收合重叠，使所述欲镀原料蒸镀至所述待镀基板上；当所述欲镀原料浓度未达预设值时，所述数个副遮挡板以所述支撑部为中心展开覆盖，避免所述欲镀原料蒸镀至所述待镀基板上。
本发明还提供一种遮挡板结构，包含支撑部、数个支撑条以及数个副遮挡板。所述数个支撑条连接所述支撑部。所述数个副遮挡板位于所述支撑条之间，所述数个副遮挡板通过所述支撑条收合重叠或展开覆盖。
较佳地，当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板形状为扇形。
较佳地，当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板形状为三角形。
较佳地，当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板具有相同的圆心角。
 有益效果
本发明的优点在于，利用本发明的蒸镀腔结构以及遮挡板结构，可以使遮挡板的重量分散在数个副遮挡板上，再通过数个支撑条支撑数个副遮挡板，避免在制作大尺寸的面板时，因蒸镀机中的遮挡板重量过重而下垂，导致材料逸散。
 附图说明
图1绘示现有技术蒸镀腔的结构示意图；
图2绘示现有技术蒸镀腔的主遮挡板下垂时的结构示意图；
图3绘示本发明第一实施例的蒸镀腔结构；
图4绘示第一实施例的遮挡板折叠收合后的侧视图；
图5绘示本发明的第二实施例的蒸镀腔结构；
图6绘示第二实施例的遮挡板折叠收合后的侧视图。
 本发明的最佳实施方式
下面结合附图对本发明提供的显示面板及显示装置做详细说明。具体实施方式中的纵向、横向、上、下、左、右、前、后仅是为了便于描述各部件之间的相对关系，而非用来限定本发明的实施方式。显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参考图3，图3所示为本发明第一实施例的蒸镀腔结构。蒸镀腔30具有喷嘴32与基板34以及位于两者之间的遮挡板300，遮挡板300具有数个副遮挡板320、数个支撑条340与支撑部360。遮挡板300所需要遮罩的面积由多个副遮挡板320组成，每个副遮挡板320形状为扇形，所有的副遮挡板320组成一圆形的遮挡板300。然而遮挡板300与副遮挡板320的形状只是一范例而非用于限定本发明，举凡可以遮挡覆盖蒸镀腔30的横切面或可以有效遮挡蒸镀材料的遮挡板300及副遮挡板320，任何副遮挡板320与其所组成的遮挡板300的形状与大小，皆是本发明的范围。
遮挡板300由数个副遮挡板320组成，每个副遮挡板320之间具有支撑条340。支撑条340用来承载副遮挡板320的重量，并且与支撑部360相连，其中每个支撑条340的一端个别固定于支撑部360上，如此一来，遮挡板300的重量便分配到多个副遮挡板320上，再由多个支撑条340共同分担遮挡板300的重量，因此可以降低每个支撑条340所需分担的重量。如此一来，在生产大尺寸面板时，便可改善现有技术中遮挡板仅由两块挡板(主遮挡板与副遮挡板)组成，使得主遮挡板因面积太大、重量过重而导致主遮挡板下垂，进而导致有机材料逸散的问题。
请参考图3及图4，图4为第一实施例(即图3中)遮挡板300折叠收合后的侧视图。如图4所示，在遮挡板300折叠收合后，每一个副遮挡板320会重叠使得遮挡板300只剩直条状的支撑条340的面积，因此有机材料便会通过遮挡板300蒸镀到基板34上。当有机材料的浓度尚未达到预设的理想值时，遮挡板300便如图3展开覆盖，以避免未达理想值的有机材料逸散到基板34上而形响显示面板的品质。较佳地，副遮挡板320具有相同的图心角a，如此一来便可方便控制每个支撑条340所需张开或闭合的角度，可以更简便地控制遮挡板300的开合。
请参考图5，图5为本发明的第二实施例的蒸镀腔结构。如图5所示，第二实施例蒸镀腔50同样包含喷嘴52、基板54以及遮挡板500，遮挡板500包含数个副遮挡板520、数个支撑条540与支撑部560。遮挡板500同样由数个副遮挡板520所组成，每个遮挡板520之间具有支撑条540，每个支撑条540的一端单独连接到支撑部560以支撑副遮挡板520的重量。在第二实施例中，副遮挡板520的形状为三角形，三角形相较于扇形结构及尺寸更加简单，可以简化每一个副遮挡板520的制作，减少扇形中弧线长、弧度等较复杂的非直线参数。较佳地，副遮挡板520具有相同的圆心角b，如此一来便可方便控制每个支撑条所需张开或闭合的角度，可以更简便地控制遮挡板500的开合。
请参考图6，图6为第二实施例的遮挡板折叠收合后的侧视图。当图5中的喷嘴52所喷出的有机材料浓度未达预设的理想值时，遮挡板500展开覆盖以避免有机材料逸散到基板54上。当喷嘴52所喷出的有机材料浓度达到预设的理想值时，再通过控制支撑条540将遮挡板520收合重叠，当遮挡板500收合重叠时，遮挡板500的水平面上只具有支撑条540收合重叠后的宽度，因此有机材料可以通过遮挡板500蒸镀至基板54上。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (11)

  1. 一种蒸镀腔结构，用于待镀基板，所述蒸镀腔结构包含：
    腔体；
    材料喷嘴，位于所述腔体内部下方，用来喷出欲镀原料至位于所述腔体内部上方的所述待镀基板；以及
    遮挡板结构，包含：
    支撑部；
    数个支撑条，连接所述支撑部；以及
    数个副遮挡板，位于所述支撑条之间，所述数个副遮挡板通过所述支撑条收合重叠或展开覆盖，通过所述数个副遮挡板的收合重叠或展开覆盖，控制所述欲镀原料的浓度，其中所述数个副遮挡板展开覆盖时，每一个所述副遮挡板形状为扇形或三角形。
  2. 一种蒸镀腔结构，用于待镀基板，所述蒸镀腔结构包含：
    腔体；
    材料喷嘴，位于所述腔体内部下方，用来喷出欲镀原料至位于所述腔体内部上方的所述待镀基板；以及
    遮挡板结构，包含：
    支撑部；
    数个支撑条，连接所述支撑部；以及
    数个副遮挡板，位于所述支撑条之间，所述数个遮副遮挡板通过所述支撑条收合重叠或展开覆盖。
  3. 如权利要求2所述的蒸镀腔结构，其中当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板形状为扇形。
  4. 如权利要求2所述的蒸镀腔结构，其中当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板形状为三角形。
  5. 如权利要求2所述的蒸镀腔结构，其中当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板具有相同的圆心角。
  6. 如权利要求2所述的蒸镀腔结构，其中所述数个副遮挡板可以收合重叠或展开覆盖，通过所述数个副遮挡板的收合重叠或展开覆盖，控制所述欲镀原料的浓度。
  7. 如权利要求6所述的蒸镀腔结构，其中所述数个副遮挡板可以收合重叠或展开覆盖，通过所述数个副遮挡板的收合重叠或展开覆盖，控制所述欲镀原料的浓度，当所述欲镀原料浓度达预设值时，所述数个副遮挡板以所述支撑部为中心收合重叠，使所述欲镀原料蒸镀至所述待镀基板上；当所述欲镀原料浓度未达预设值时，所述数个副遮挡板以所述支撑部为中心展开覆盖，避免所述欲镀原料蒸镀至所述待镀基板上。
  8. 一种遮挡板结构，包含：
    支撑部；
    数个支撑条，连接所述支撑部；以及
    数个副遮挡板，位于所述支撑条之间，所述数个副遮挡板通过所述支撑条收合重叠或展开覆盖。
  9. 如权利要求8所述的遮挡板结构，其中当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板形状为扇形。
  10. 如权利要求8所述的遮挡板结构，其中当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板形状为三角形。
  11. 如权利要求8所述的遮挡板结构，其中当所述数个副遮挡板展开覆盖时，每一个所述副遮挡板具有相同的圆心角。
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