WO2020113822A1 - 具有高介电常数薄膜的柔性基板及其制作方法 - Google Patents

具有高介电常数薄膜的柔性基板及其制作方法 Download PDF

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WO2020113822A1
WO2020113822A1 PCT/CN2019/075337 CN2019075337W WO2020113822A1 WO 2020113822 A1 WO2020113822 A1 WO 2020113822A1 CN 2019075337 W CN2019075337 W CN 2019075337W WO 2020113822 A1 WO2020113822 A1 WO 2020113822A1
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hfalox
flexible substrate
insulating layer
dielectric constant
high dielectric
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French (fr)
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金鹏
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/340,161 priority Critical patent/US11011613B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators

Definitions

  • the invention relates to the field of display technology, in particular to a flexible substrate with a high dielectric constant film and a manufacturing method thereof.
  • TFT Thin-Film Transistor
  • the electrical properties of the gate insulating layer of the TFT device and its interface characteristics with the channel of the active layer have a direct impact on the threshold voltage, subthreshold swing and field effect mobility of the thin film transistor.
  • the gate insulating layer 1 of the TFT device currently uses silicon oxide/silicon nitride (SiOx/SiNx) as the insulating layer to separate the gate 2 and the source electrodes on both sides of the polysilicon layer 3 4 and drain 5.
  • the display device tends to be ultra-thin, and the SiOx/SiNx insulating layer due to quantum tunneling (Quantum tunnelling effect) will increase the leakage current (Leakage Current), resulting in increased power consumption of the display device, affecting the normal operation of the display device.
  • chemical vapor deposition chemical Vapor deposition (CVD) or physical vapor deposition (Physical Vapor Deposition, PVD) coatings are prepared. These preparation methods require high equipment and require a vacuum environment. The production cost is high and the production speed is slow.
  • the invention provides a flexible substrate with a high dielectric constant film and a manufacturing method thereof, which can effectively reduce the leakage current of the flexible substrate and reduce the threshold voltage, can improve the regulation effect of the gate on the current between the source and drain, and reduce the flexibility Power consumption of the substrate and its display panel.
  • the present invention provides a method for manufacturing a flexible substrate with a high dielectric constant film, including the following steps:
  • the HfAlOx solution is composed of hafnium tetrachloride (HfCl 4 ) powder and aluminum nitrate nonahydrate (Al(NO 3 ) 3 ⁇ 9H 2 O), and is added with the solvent ethylene glycol methyl ether.
  • the concentration of the HfAlOx solution is 0.2 mol/L.
  • step S30 the HfAlOx solution is also annealed to form the HfAlOx insulating layer, and the thickness of the HfAlOx insulating layer is 10 nanometers (nm).
  • the invention also provides a flexible substrate with a high dielectric constant film, including:
  • the polysilicon layer is provided on the flexible substrate;
  • HfAlOx insulating layer is disposed on the polysilicon layer by baking with an HfAlOx solution;
  • the metal gate is disposed on the HfAlOx insulating layer.
  • the source electrode and the drain electrode are disposed on the polysilicon layer, wherein the metal gate electrode and the source electrode and the drain electrode are spaced apart from the HfAlOx insulating layer.
  • the thickness of the HfAlOx insulating layer is 10 nanometers (nm).
  • the invention also provides a method for manufacturing a flexible substrate with a high dielectric constant film, including the following steps:
  • ⁇ ⁇ S10. Provide a flexible substrate
  • the HfAlOx solution is respectively hafnium tetrachloride (HfCl4) powder and aluminum nitrate nonahydrate (Al(NO 3 ) 3 ⁇ 9H 2 O), and the solvent ethylene glycol is added Ether is configured.
  • the concentration of the HfAlOx solution is 0.2 mol/L.
  • step S30 the HfAlOx solution is also annealed to form the HfAlOx insulating layer, and the thickness of the HfAlOx insulating layer is 10 nanometers (nm).
  • step S40 before forming the metal gate, further comprising depositing a metal layer on the HfAlOx insulating layer, the metal layer is formed by exposing, developing, and etching the metal gate .
  • the method further includes depositing an amorphous silicon (a-Si; Amorphous Silicon) on the flexible substrate, and forming it through dehydrogenation, crystallization, exposure, development, and etching.
  • a-Si amorphous silicon
  • step S10 before step S10, it further includes providing a glass substrate, coating a flexible substrate solution on the glass substrate, and producing the high-level output voltage (HVDD) and the oven (OVEN).
  • the flexible substrate is a polyimide (PI, Polyimide).
  • the present invention uses HfAlOx (hafnium aluminum oxide) high-k dielectric constant material (High-k dielectric constant material) replaces the existing SiOx/SiNx gate insulating layer, which can effectively reduce the leakage current of the display device and reduce the threshold voltage (Threshold Voltage), improve the regulation effect of the metal gate on the current between the source and drain, and reduce the power consumption of the display device.
  • HfAlOx hafnium aluminum oxide
  • High-k dielectric constant material replaces the existing SiOx/SiNx gate insulating layer, which can effectively reduce the leakage current of the display device and reduce the threshold voltage (Threshold Voltage), improve the regulation effect of the metal gate on the current between the source and drain, and reduce the power consumption of the display device.
  • HfAlOx high dielectric constant material can effectively reduce the thickness of the TFT device, and is better suitable for flexible display devices.
  • HfAlOx solution to prepare the gate insulating layer can simplify the operation, reduce the production cost, and increase the production speed.
  • HfAlOx high dielectric constant materials have higher k-value (High-k), higher crystallization temperature, better thermal stability with silicon substrate and excellent interface performance, it becomes an ideal alternative to existing SiOx/SiNx Preferred materials.
  • the present invention uses the HfAlOx solution method to prepare the gate insulating layer, which requires lower equipment, simple operation, and easy control of the material composition, which can effectively reduce production costs.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a prior art flexible substrate
  • FIG. 2 is a flowchart of steps of a method for manufacturing a flexible substrate with a high dielectric constant film according to the present invention
  • 3 to 7 are schematic cross-sectional views of various structures of a method for manufacturing a flexible substrate with a high dielectric constant film according to the present invention.
  • FIG. 2 is a flow chart of the steps of the method for manufacturing a flexible substrate with a high dielectric constant film according to the present invention.
  • 3 to 7 are schematic cross-sectional views of various structures of a method for manufacturing a flexible substrate with a high dielectric constant film according to the present invention.
  • the present invention provides a method for manufacturing a flexible substrate with a high dielectric constant film, including the following steps:
  • step S10 it also includes providing a glass substrate 12, coating a flexible substrate solution (not shown) on the glass substrate 12, and obtaining the product by, for example, high level output voltage (HVDD) and oven (OVEN) Described flexible substrate 10.
  • the flexible substrate 10 is preferably a polyimide (PI, Polyimide).
  • the HfAlOx solution is respectively hafnium tetrachloride (HfCl 4 ) powder and aluminum nitrate nonahydrate (Al(NO 3 ) 3 ⁇ 9H 2 O), and the solvent ethylene glycol is added Ether (Ethylene glycol monomethyl ether; structural formula HOCH2CH2OCH3). That is, the hafnium tetrachloride powder of the inorganic compound is added to aluminum nitrate nonahydrate in the form of hydrated crystals, and then added to the solvent ethylene glycol methyl ether to prepare the HfAlOx solution.
  • HfCl 4 hafnium tetrachloride
  • Al(NO 3 ) 3 ⁇ 9H 2 O aluminum nitrate nonahydrate
  • Ether Ether
  • the hafnium tetrachloride powder of the inorganic compound is added to aluminum nitrate nonahydrate in the form of hydrated crystals, and then added to the solvent ethylene glyco
  • the HfAlOx solution is also annealed to form the HfAlOx insulating layer 16, and the thickness of the HfAlOx insulating layer 16 is preferably 10 nanometers (nm).
  • step S40 as shown in FIG. 6, before forming the metal gate 18, a metal layer (not shown) is deposited on the HfAlOx insulating layer 16, and the metal layer is formed by exposure, development, and etching The metal gate 18.
  • the HfAlOx insulating layer 16 further covers the polysilicon layer 14 and is isolated from the metal gate 18.
  • step S50 as shown in FIG. 7, the source electrode 20a and the drain electrode 20b are formed on both sides of the polysilicon layer 14, and are separated from the metal gate electrode 18 by the HfAlOx insulating layer 16, thus made
  • the invention has a flexible substrate with a small thickness, good uniformity of the HfAlOx insulating layer 16 and low roughness.
  • a protective layer (not shown) provided on the metal gate 18 is included to isolate the metal gate 18 from the air.
  • the protective layer is, for example, a glass cover or a scratch-resistant film.
  • the present invention further provides a flexible substrate with a high dielectric constant film, including a flexible substrate 10, a polysilicon layer 14, an HfAlOx insulating layer 16, a metal gate 18, and source and drain electrodes 20.
  • the polysilicon layer 14 is disposed on the flexible substrate 10.
  • An HfAlOx insulating layer 16, the HfAlOx insulating layer 16 is provided on the polysilicon layer 14 by baking or annealing from an HfAlOx solution.
  • the metal gate 18 is disposed on the HfAlOx insulating layer 16.
  • the source electrode and the drain electrode 20 are disposed on the polysilicon layer 14, wherein the metal gate electrode 18 and the source electrode and the drain electrode 20 are spaced apart from the HfAlOx insulating layer 16.
  • the thickness of the HfAlOx insulating layer is 10 nanometers (nm).
  • the present invention uses the HfAlOx solution to prepare the HfAlOx insulating layer 16 to simplify the operation, reduce the production cost, increase the production speed, effectively reduce the thickness of the TFT device, and be more suitable for flexible display devices.
  • the present invention utilizes the HfAlOx insulating layer 16, which can effectively reduce the leakage current of the display device, reduce the threshold voltage, improve the regulation effect of the metal gate 18 on the current between the source and the drain 20, and reduce the power consumption of the display device.

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  • Thin Film Transistor (AREA)

Abstract

一种具有高介电常数薄膜的柔性基板(10)及其制作方法，其中一种具有高介电常数薄膜的柔性基板(10)的制作方法包括以下步骤：提供一柔性基板(10)；在所述柔性基板(10)上形成一多晶硅层(14)；在所述多晶硅层(14)上涂布一HfAlOx溶液，所述HfAlOx溶液通过烘烤退火制程形成一HfAlOx绝缘层(16)；在所述HfAlOx绝缘层(16)上形成一金属栅极(18)；以及对所述多晶硅层(14)上进行参杂、活化，以形成一源极和漏极(20)，其中，所述金属栅极(18)和所述源极和漏极(20)之间以所述HfAlOx绝缘层(16)间隔。

Description

具有高介电常数薄膜的柔性基板及其制作方法 技术领域
本发明涉及一种显示技术领域，尤其是涉及一种具有高介电常数薄膜的柔性基板及其制作方法。
 背景技术
薄膜晶体管（TFT; Thin-Film Transistor）作为平板显示器中的核心组件，在提高显示器的显示性能和拓宽显示应用领域上具有举足轻重的地位。TFT器件的栅绝缘层的电学性能以及其与有源层沟道之间的界面特性对薄膜晶体管的阈值电压、亚阈值摆幅以及场效应迁移率有着直接影响。如图1所示，TFT器件的栅极绝缘层1目前生产中还是以氧化硅/氮化硅（SiOx/SiNx）作为绝缘层，以分别间隔栅极2以及位于多晶硅层3二侧的源极4和漏极5。然而随着柔性显示的发展，显示器件趋于超薄化，SiOx/SiNx绝缘层由于量子隧穿效应（Quantum tunnelling effect），会使得其漏电流（Leakage Current）增加，导致显示器件功耗增加，影响显示器件正常工作。此外，在目前的生产栅极绝缘层的制程中，都采用化学气相沉积（chemical vapor deposition，CVD）或物理气相沉积（Physical Vapor Deposition, PVD）镀膜进行制备，这些制备方法对设备要求较高，而且需要真空环境，生产成本较高，生产速度较慢。
 技术问题
随着柔性显示的发展，显示器件趋于超薄化，SiOx/SiNx绝缘层由于量子隧穿效应（Quantum tunnelling effect），会使得其漏电流（Leakage Current）增加，导致显示器件功耗增加，影响显示器件正常工作。此外，在目前的生产栅极绝缘层的制程中，都采用化学气相沉积（chemical vapor deposition，CVD）或物理气相沉积（Physical Vapor Deposition, PVD）镀膜进行制备，这些制备方法对设备要求较高，而且需要真空环境，生产成本较高，生产速度较慢。
 技术解决方案
本发明提供一种具有高介电常数薄膜的柔性基板及其制作方法，能够有效降低柔性基板的漏电流、减小阈值电压，可以提高栅极对源漏极之间电流的调控作用，降低柔性基板及其显示面板的功耗。
为达成本发明的前述目的，本发明提供一种具有高介电常数薄膜的柔性基板的制作方法，包括以下步骤：
S10、提供一柔性基板；
S20、在所述柔性基板上形成一多晶硅层；
S30、在所述多晶硅层上涂布一HfAlOx溶液，所述HfAlOx溶液通过烘烤形成一HfAlOx绝缘层；
S40、在所述HfAlOx绝缘层上形成一金属栅极；以及
S50、对所述多晶硅层上进行参杂、活化，以形成一源极和漏极，其中所述金属栅极和所述源极和漏极之间以与所述HfAlOx绝缘层间隔，所述HfAlOx溶液分别为四氯化铪（HfCl 4）粉末和九水合硝酸铝（Al(NO 3) 3·9H 2O），加入溶剂乙二醇甲醚所配置而成。
根据本发明一实施例，所述HfAlOx溶液浓度为0.2mol/L。
根据本发明一实施例，所述HfAlOx溶液内的Hf元素和Al元素的摩尔比为n(Hf):n(Al)=2:1。
根据本发明一实施例，在步骤S30中，所述HfAlOx溶液还通过退火形成所述HfAlOx绝缘层，所述HfAlOx绝缘层的厚度为10奈米（nm）。
本发明还提供一种具有高介电常数薄膜的柔性基板，包括：
柔性基板；
多晶硅层设置于所述柔性基板上；
    HfAlOx绝缘层，所述HfAlOx绝缘层由HfAlOx溶液经过烘烤而设置于所述多晶硅层上；
金属栅极设置于所述HfAlOx绝缘层上；以及
源极和漏极设置于所述多晶硅层上，其中，所述金属栅极和所述源极和漏极之间以与所述HfAlOx绝缘层间隔。
根据本发明一实施例，所述HfAlOx绝缘层的厚度为10奈米（nm）。
本发明又提供一种具有高介电常数薄膜的柔性基板的制作方法，包括以下步骤：
    S10、提供一柔性基板；
    S20、在所述柔性基板上形成一多晶硅层（Poly-Silicon layer）；
    S30、在所述多晶硅层上涂布一HfAlOx溶液，所述HfAlOx溶液通过烘烤形成一HfAlOx绝缘层；
    S40、在所述HfAlOx绝缘层上形成一金属栅极；以及
    S50、对所述多晶硅层上进行参杂（doping）、活化，以形成一源极和漏极，其中，所述金属栅极和所述源极和漏极之间以与所述HfAlOx绝缘层间隔。
根据本发明一实施例，在步骤S30中，所述HfAlOx溶液分别为四氯化铪（HfCl4）粉末和九水合硝酸铝（Al(NO 3) 3·9H 2O），加入溶剂乙二醇甲醚所配置而成。
根据本发明一实施例，所述HfAlOx溶液浓度为0.2mol/L。
根据本发明一实施例，所述HfAlOx溶液内的Hf元素和Al元素的摩尔比为n(Hf):n(Al)=2:1。
根据本发明一实施例，在步骤S30中，所述HfAlOx溶液还通过退火形成所述HfAlOx绝缘层，所述HfAlOx绝缘层的厚度为10奈米（nm）。
根据本发明一实施例，在步骤S40中，形成所述金属栅极前还包括在所述HfAlOx绝缘层上沉积一金属层，所述金属层通过曝光、显影、刻蚀形成所述金属栅极。
根据本发明一实施例，在步骤S20中，还包括在所述柔性基板上沉积一非晶硅（a-Si；Amorphous Silicon），并通过脱氢、结晶、曝光、显影、刻蚀，才形成所述多晶硅层。
根据本发明一实施例，在步骤S10前，还包括提供一玻璃基板，在所述玻璃基板上涂布一柔性基板溶液，并通过高准位输出电压（HVDD）和烤箱（OVEN）制得所述柔性基板，所述柔性基板为一聚酰亚胺（PI，Polyimide）。
 有益效果
本发明实施例带来的有益效果为：
1、本发明利用HfAlOx（hafnium aluminum oxide）高介电常数材料（High-k dielectric constant material）代替现有SiOx/SiNx栅绝缘层，能够有效降低显示器件的漏电流、减小阈值电压(Threshold Voltage)，提高金属栅极对源漏极之间电流的调控作用，降低显示器件功耗。
2、采用HfAlOx高介电常数材料能够有效降低TFT器件厚度，更好的适用于柔性显示器件。
3、利用HfAlOx溶液制备栅极绝缘层可以简化操作，降低生产成本，提高生产速度。
由于HfAlOx高介电常数材料具有较高的k值（High-k）、较高的结晶温度、与硅衬底具有较好的热稳定性和优异界面性能，成为替代现有SiOx/SiNx理想的优选材料。此外，本发明使用HfAlOx溶液法制备栅极绝缘层，对设备要求较低、操作简单、材料成分容易控制，能够有效降低生产成本。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术柔性基板的剖面结构示意图；
图2为本发明具有高介电常数薄膜的柔性基板的制作方法的步骤流程图；及
图3至图7为本发明具有高介电常数薄膜的柔性基板的制作方法的各结构剖面示意图。
 本发明的实施方式
在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下 ]、[前]、 [后]、 [左]、 [右]、 [内]、 [外]、 [侧面 ]、[竖直]、[水平]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
图2为本发明具有高介电常数薄膜的柔性基板的制作方法的步骤流程图。图3至图7为本发明具有高介电常数薄膜的柔性基板的制作方法的各结构剖面示意图。如图2至图7所示，本发明提供一种具有高介电常数薄膜的柔性基板的制作方法，包括以下步骤：
步骤S10、提供一柔性基板10；步骤S20、在所述柔性基板10上形成一多晶硅层（Poly-Silicon layer）14；步骤S30、在所述多晶硅层14上涂布一HfAlOx溶液，所述HfAlOx溶液通过烘烤形成一HfAlOx绝缘层16；步骤S40、在所述HfAlOx绝缘层16上形成一金属栅极18；以及步骤S50、对所述多晶硅层14上进行参杂（doping）、活化，以形成一源极和漏极20，其中，所述金属栅极18和所述源极和漏极20之间以与所述HfAlOx绝缘层16间隔。
在步骤S10前，还包括提供一玻璃基板12，在所述玻璃基板12上涂布一柔性基板溶液（图略），并通过例如高准位输出电压（HVDD）和烤箱（OVEN）制得所述柔性基板10。在如图3所示的实施例中，所述柔性基板10优选为一聚酰亚胺（PI，Polyimide）。
在步骤S20中，如图4所示，还包括在所述柔性基板10上沉积一非晶硅（a-Si；Amorphous Silicon），并通过脱氢、结晶、曝光、显影、刻蚀，才形成所述多晶硅层14。
在步骤S30中，如图5所示，所述HfAlOx溶液分别为四氯化铪（HfCl 4）粉末和九水合硝酸铝（Al(NO 3) 3·9H 2O），加入溶剂乙二醇甲醚（Ethylene glycol monomethyl ether；结构式HOCH₂CH₂OCH₃）所配置而成。也就是说，将无机化合物的四氯化铪粉末加入水合结晶形式存在的九水合硝酸铝中，再加入溶剂乙二醇甲醚中，以配置所述HfAlOx溶液。
所述HfAlOx溶液浓度优选为0.2mol/L，且所述HfAlOx溶液内的Hf（铪;Hafnium）元素和Al元素的摩尔比优选为n(Hf):n(Al)=2:1。在步骤S30中，所述HfAlOx溶液还通过退火形成所述HfAlOx绝缘层16，所述HfAlOx绝缘层16的厚度优选为10奈米（nm）。
在步骤S40中，如图6所示，形成所述金属栅极18前还包括在所述HfAlOx绝缘层16上沉积一金属层（图略），所述金属层通过曝光、显影、刻蚀形成所述金属栅极18。所述HfAlOx绝缘层16进一步包覆所述多晶硅层14，并与所述金属栅极18隔离。
在步骤S50中，如图7所示，所述源极20a和所述漏极20b分别形成于多晶硅层14的二侧，并以所述HfAlOx绝缘层16与金属栅极18间隔，如此制成本发明具有厚度较小、HfAlOx绝缘层16均一性较好且粗糙度较低的的柔性基板。当然在步骤S50之后，还包括设置在金属栅极18上的一保护层（图略），以将所述金属栅极18与空气隔绝，所述保护层例如为玻璃盖板或耐刮薄膜。
如图7所示，本发明另提供一种具有高介电常数薄膜的柔性基板，包括柔性基板10、多晶硅层14、HfAlOx绝缘层16、金属栅极18以及源极和漏极20。多晶硅层14设置于所述柔性基板10上。HfAlOx绝缘层16，所述HfAlOx绝缘层16由HfAlOx溶液通过烘烤或退火而设置于所述多晶硅层14上。金属栅极18设置于所述HfAlOx绝缘层16上。源极和漏极20设置于所述多晶硅层14上，其中，所述金属栅极18和所述源极和漏极20之间以与所述HfAlOx绝缘层16间隔。所述HfAlOx绝缘层的厚度为10奈米（nm）。
因此本发明利用HfAlOx溶液制备HfAlOx绝缘层16可以简化操作，降低生产成本，提高生产速度，有效降低TFT器件厚度，更好的适用于柔性显示器件中。本发明利用HfAlOx绝缘层16，能够有效降低显示器件的漏电流、减小阈值电压，提高金属栅极18对源极和漏极20之间电流的调控作用，降低显示器件功耗等优点。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，所衍生的各种更动与变化，皆涵盖于本发明以权利要求界定的保护范围内。

Claims (14)

  1. 一种具有高介电常数薄膜的柔性基板的制作方法，包括以下步骤：
    S10、提供一柔性基板；
    S20、在所述柔性基板上形成一多晶硅层；
    S30、在所述多晶硅层上涂布一HfAlOx溶液，所述HfAlOx溶液通过烘烤形成一HfAlOx绝缘层；
    S40、在所述HfAlOx绝缘层上形成一金属栅极；以及
    S50、对所述多晶硅层上进行参杂、活化，以形成一源极和漏极，其中所述金属栅极和所述源极和漏极之间以与所述HfAlOx绝缘层间隔，所述HfAlOx溶液分别为四氯化铪（HfCl 4）粉末和九水合硝酸铝（Al(NO 3) 3·9H 2O），加入溶剂乙二醇甲醚所配置而成。
  2. 根据权利要求1所述的具有高介电常数薄膜的柔性基板的制作方法，其中所述HfAlOx溶液浓度为0.2mol/L。
  3. 根据权利要求1所述的具有高介电常数薄膜的柔性基板的制作方法，其中所述HfAlOx溶液内的Hf元素和Al元素的摩尔比为n(Hf):n(Al)=2:1。
  4. 根据权利要求1所述的具有高介电常数薄膜的柔性基板的制作方法，其中在步骤S30中，所述HfAlOx溶液还通过退火形成所述HfAlOx绝缘层，所述HfAlOx绝缘层的厚度为10奈米（nm）。
  5. 一种具有高介电常数薄膜的柔性基板，包括：
    柔性基板；
    多晶硅层设置于所述柔性基板上；
    HfAlOx绝缘层，所述HfAlOx绝缘层由HfAlOx溶液经过烘烤而设置于所述多晶硅层上；
    金属栅极设置于所述HfAlOx绝缘层上；以及
    源极和漏极设置于所述多晶硅层上，其中所述金属栅极和所述源极和漏极之间以与所述HfAlOx绝缘层间隔。
  6. 根据权利要求5所述的具有高介电常数薄膜的柔性基板，其中所述HfAlOx绝缘层的厚度为10奈米（nm）。
  7. 一种具有高介电常数薄膜的柔性基板的制作方法，包括以下步骤：
    S10、提供一柔性基板；
    S20、在所述柔性基板上形成一多晶硅层；
    S30、在所述多晶硅层上涂布一HfAlOx溶液，所述HfAlOx溶液通过烘烤形成一HfAlOx绝缘层；
    S40、在所述HfAlOx绝缘层上形成一金属栅极；以及
    S50、对所述多晶硅层上进行参杂、活化，以形成一源极和漏极，其中所述金属栅极和所述源极和漏极之间以与所述HfAlOx绝缘层间隔。
  8. 根据权利要求7所述的具有高介电常数薄膜的柔性基板的制作方法，其中在步骤S30中，所述HfAlOx溶液分别为四氯化铪（HfCl 4）粉末和九水合硝酸铝（Al(NO 3) 3·9H 2O），加入溶剂乙二醇甲醚所配置而成。
  9. 根据权利要求8所述的具有高介电常数薄膜的柔性基板的制作方法，其中所述HfAlOx溶液浓度为0.2mol/L。
  10. 根据权利要求8所述的具有高介电常数薄膜的柔性基板的制作方法，其中所述HfAlOx溶液内的Hf元素和Al元素的摩尔比为n(Hf):n(Al)=2:1。
  11. 根据权利要求7所述的具有高介电常数薄膜的柔性基板的制作方法，其中在步骤S30中，所述HfAlOx溶液还通过退火形成所述HfAlOx绝缘层，所述HfAlOx绝缘层的厚度为10奈米（nm）。
  12. 根据权利要求7所述的具有高介电常数薄膜的柔性基板的制作方法，其中在步骤S40中，在形成所述金属栅极前还包括在所述HfAlOx绝缘层上沉积一金属层，所述金属层通过曝光、显影、刻蚀形成所述金属栅极。
  13. 根据权利要求7所述的具有高介电常数薄膜的柔性基板的制作方法，其中在步骤S20中，还包括在所述柔性基板上沉积一非晶硅，并通过脱氢、结晶、曝光、显影、刻蚀，才形成所述多晶硅层。
  14. 根据权利要求7所述的具有高介电常数薄膜的柔性基板的制作方法，其中在步骤S10前，还包括提供一玻璃基板，在所述玻璃基板上涂布一柔性基板溶液，并通过高准位输出电压（HVDD）和烤箱（OVEN）制得所述柔性基板，所述柔性基板为一聚酰亚胺（PI）。
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