CN103943683A - 一种铟锡锌氧化物同质薄膜晶体管及其制备方法 - Google Patents
一种铟锡锌氧化物同质薄膜晶体管及其制备方法 Download PDFInfo
- Publication number
- CN103943683A CN103943683A CN201310651400.4A CN201310651400A CN103943683A CN 103943683 A CN103943683 A CN 103943683A CN 201310651400 A CN201310651400 A CN 201310651400A CN 103943683 A CN103943683 A CN 103943683A
- Authority
- CN
- China
- Prior art keywords
- zinc oxide
- indium tin
- tin zinc
- film transistor
- channel layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052718 tin Inorganic materials 0.000 claims abstract description 9
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 9
- 239000011701 zinc Substances 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 239000000843 powder Substances 0.000 claims abstract description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 56
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 40
- 238000004544 sputter deposition Methods 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 24
- 229910052786 argon Inorganic materials 0.000 claims description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000003595 mist Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000012459 cleaning agent Substances 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- 238000000498 ball milling Methods 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 238000004064 recycling Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 239000013077 target material Substances 0.000 abstract description 6
- 239000011787 zinc oxide Substances 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract 1
- 238000000227 grinding Methods 0.000 abstract 1
- 238000009776 industrial production Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
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CN201310651400.4A CN103943683B (zh) | 2013-12-06 | 2013-12-06 | 一种铟锡锌氧化物同质薄膜晶体管及其制备方法 |
Applications Claiming Priority (1)
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CN201310651400.4A CN103943683B (zh) | 2013-12-06 | 2013-12-06 | 一种铟锡锌氧化物同质薄膜晶体管及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103943683A true CN103943683A (zh) | 2014-07-23 |
CN103943683B CN103943683B (zh) | 2017-12-26 |
Family
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Family Applications (1)
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CN201310651400.4A Expired - Fee Related CN103943683B (zh) | 2013-12-06 | 2013-12-06 | 一种铟锡锌氧化物同质薄膜晶体管及其制备方法 |
Country Status (1)
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CN (1) | CN103943683B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108258055A (zh) * | 2018-01-15 | 2018-07-06 | 北京交通大学 | 锌铟锡氧化物基薄膜晶体管及其制作方法 |
CN108447978A (zh) * | 2018-04-13 | 2018-08-24 | 哈尔滨理工大学 | 无机薄膜压电二极管及制作方法 |
CN109285893A (zh) * | 2018-10-29 | 2019-01-29 | 佛山科学技术学院 | 一种同质结薄膜晶体管 |
CN109659436A (zh) * | 2018-12-19 | 2019-04-19 | 福州大学 | 一种全透明异质结光晶体管及其制备方法 |
CN110034177A (zh) * | 2019-04-24 | 2019-07-19 | 深圳扑浪创新科技有限公司 | 一种光电复合薄膜及其用途 |
CN111769161A (zh) * | 2019-04-01 | 2020-10-13 | 山东大学 | 一种氮掺非晶氧化物薄膜晶体管及其制备方法 |
WO2023115653A1 (zh) * | 2021-12-20 | 2023-06-29 | 北京超弦存储器研究院 | 一种基于氧化铟锡的全透明薄膜晶体管及其制备方法 |
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US20090050876A1 (en) * | 2007-06-01 | 2009-02-26 | Marks Tobin J | Transparent Nanowire Transistors and Methods for Fabricating Same |
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WO2012049824A1 (ja) * | 2010-10-13 | 2012-04-19 | シャープ株式会社 | 薄膜トランジスタ基板及びそれを用いた表示装置 |
CN202285237U (zh) * | 2011-06-15 | 2012-06-27 | 广东中显科技有限公司 | 一种柔性半透明igzo薄膜晶体管 |
CN102859670A (zh) * | 2010-04-22 | 2013-01-02 | 出光兴产株式会社 | 成膜方法 |
CN102969361A (zh) * | 2011-09-01 | 2013-03-13 | 中国科学院微电子研究所 | 光照稳定性非晶态金属氧化物tft器件以及显示器件 |
KR101301219B1 (ko) * | 2011-12-26 | 2013-08-28 | 연세대학교 산학협력단 | 박막 트랜지스터 및 박막 트랜지스터 제조 방법 |
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2013
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Patent Citations (9)
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JP2001281698A (ja) * | 2000-03-30 | 2001-10-10 | Advanced Display Inc | 電気光学素子の製法 |
CN1656618A (zh) * | 2002-05-21 | 2005-08-17 | 俄勒冈州,由高等教育州委员会代表俄勒冈州立大学 | 晶体管结构和制造该晶体管结构的方法 |
US20090050876A1 (en) * | 2007-06-01 | 2009-02-26 | Marks Tobin J | Transparent Nanowire Transistors and Methods for Fabricating Same |
CN101803026A (zh) * | 2007-07-17 | 2010-08-11 | 聚合物视象有限公司 | 电子器件以及制造电子器件的方法 |
CN102859670A (zh) * | 2010-04-22 | 2013-01-02 | 出光兴产株式会社 | 成膜方法 |
WO2012049824A1 (ja) * | 2010-10-13 | 2012-04-19 | シャープ株式会社 | 薄膜トランジスタ基板及びそれを用いた表示装置 |
CN202285237U (zh) * | 2011-06-15 | 2012-06-27 | 广东中显科技有限公司 | 一种柔性半透明igzo薄膜晶体管 |
CN102969361A (zh) * | 2011-09-01 | 2013-03-13 | 中国科学院微电子研究所 | 光照稳定性非晶态金属氧化物tft器件以及显示器件 |
KR101301219B1 (ko) * | 2011-12-26 | 2013-08-28 | 연세대학교 산학협력단 | 박막 트랜지스터 및 박막 트랜지스터 제조 방법 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108258055A (zh) * | 2018-01-15 | 2018-07-06 | 北京交通大学 | 锌铟锡氧化物基薄膜晶体管及其制作方法 |
CN108447978A (zh) * | 2018-04-13 | 2018-08-24 | 哈尔滨理工大学 | 无机薄膜压电二极管及制作方法 |
CN109285893A (zh) * | 2018-10-29 | 2019-01-29 | 佛山科学技术学院 | 一种同质结薄膜晶体管 |
CN109659436A (zh) * | 2018-12-19 | 2019-04-19 | 福州大学 | 一种全透明异质结光晶体管及其制备方法 |
CN111769161A (zh) * | 2019-04-01 | 2020-10-13 | 山东大学 | 一种氮掺非晶氧化物薄膜晶体管及其制备方法 |
CN110034177A (zh) * | 2019-04-24 | 2019-07-19 | 深圳扑浪创新科技有限公司 | 一种光电复合薄膜及其用途 |
WO2023115653A1 (zh) * | 2021-12-20 | 2023-06-29 | 北京超弦存储器研究院 | 一种基于氧化铟锡的全透明薄膜晶体管及其制备方法 |
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Inventor after: Yang Tianlin Inventor after: Song Shumei Inventor after: Xin Yanqing Inventor after: Wang Kunlun Inventor after: Tong Yang Inventor after: Wang Xuexia Inventor before: Yang Tianlin Inventor before: Li Yanhui Inventor before: Song Shumei Inventor before: Xin Yanqing Inventor before: Wang Kunlun Inventor before: Tong Yang Inventor before: Wang Xuexia |
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