CN105870173B - 一种柔性全透明非晶氧化物薄膜晶体管及其制备方法 - Google Patents
一种柔性全透明非晶氧化物薄膜晶体管及其制备方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 67
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 239000004332 silver Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 3
- 229910052718 tin Inorganic materials 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 26
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 24
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 238000010025 steaming Methods 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 57
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000011787 zinc oxide Substances 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 229920001621 AMOLED Polymers 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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Abstract
本发明涉及薄膜晶体管领域,提供了一种柔性全透明非晶氧化物薄膜晶体管及其制备方法,由基底、沟道层、介质层、栅(G)电极层、源/漏电极层组成,所述源/漏电极层是由两层透明导电氧化物(TCO)膜及夹在两层透明导电氧化物(TCO)膜之间银(Ag)膜构成的银基透明导电多层膜;其中,透明导电氧化物是包含Sn元素和M元素的高价态掺杂氧化锡基的氧化物SnO2:M;其中,氧化物SnO2:M中M元素的原子量为M/(M+Sn)=0~0.1,M元素为Cr、Mo、W中至少一种,本发明提供的非晶氧化物薄膜晶体管具备制备工艺温度与柔性透明基底兼容、高可见光透过率,以及良好的电学性能。
Description
技术领域
本发明涉及薄膜晶体管领域,尤其涉及一种柔性全透明非晶氧化物薄膜晶体管。
背景技术
随着平板显示行业的深入发展,柔性透明的有源矩阵有机发光二极管显示(AMOLED)技术成为倍受关注的新型“梦幻显示”技术。
因此,许多学者开始将目光转向薄膜有机发光显示器件上,如专利号为200710075139.2公开了一种包含透明导电膜基板、金属电极层和夹在透明导电膜基板和金属电极层之间的有机薄膜层的有机电致发光显示器件。
这一行为使得平板显示有源驱动中的核心元件“薄膜晶体管(TFT)器件”面临着新的挑战,即:要保证器件良好电学性能,同时还需实现其柔性和全透明的研制。薄膜晶体管(TFT),其是由基底、沟道层、介质层、栅(G)电极、源(S)电极以及漏(D)电极几个重要部分组成。最近,非晶氧化物TFT凭借着非晶氧化物半导体材料迁移率高、可见光透明性好、均匀性优良以及可低温,甚至室温成膜等特点,为替代传统硅基TFT、推动新型柔性透明AMOLED技术的发展提供了新思路。
然而,寻找适用于柔性全透明非晶氧化物TFT的源/漏电极材料却成为本领域亟待突破的难点。尽管传统透明导电氧化物(TCO),如:In2O3:Sn(ITO)、ZnO:Al(AZO)、ZnO:Ga(GZO)等是公认的透明电极材料,但研究表明传统TCO薄膜用作源/漏电极时,非晶氧化物TFT器件性能相比用不透明的金属电极作为源/漏电极时呈现出明显劣化,主要体现为:开态电流急剧减小,甚至器件呈现出逊色的稳定性以及输出特性丧失了典型的线性饱和特征。
而事实上,由于非晶氧化物TFT中的源(S)/漏(D)电极与非晶氧化物沟道层直接接触,因此可作为非晶氧化物TFT栅电极的传统TCO材料,将其作为器件源(S)/漏(D)电极时却并不理想,原因如下:其一,低温制备传统TCO的电阻率过高,一般高于1×10-4Ω·cm;其二,保证TCO电极与非晶氧化物沟道层间为欧姆接触以及获得低电阻率的TCO电极,两者不易兼顾;其三,传统TCO组成中含铟或锌元素中的至少一种,并且,含铟氧化物电极中,存在铟易扩散进入非晶氧化物沟道层,或者含锌氧化物电极中存在氧吸附的问题,而扩散问题、和/或氧吸附问题均会劣化非晶氧化物TFT的电学稳定性。
发明内容
本发明的目的在于解决上述技术问题,提供一种柔性全透明非晶氧化物薄膜晶体管及其制备方法。
具体通过以下方案得以实现:
一种柔性全透明非晶氧化物薄膜晶体管,由基底、沟道层、介质层、栅(G)电极层、源/漏电极层组成,所述源/漏电极层是由两层透明导电氧化物(TCO)膜及夹在两层透明导电氧化物(TCO)膜之间银(Ag)膜构成的银基透明导电多层膜;所述透明导电氧化物(TCO),是包含Sn元素和M元素的高价态掺杂氧化锡基的氧化物SnO2:M;其中,氧化物SnO2:M中M元素的原子量为M/(M+Sn)=0~0.1,M元素为Cr、Mo、W中至少一种。
所述透明导电氧化物(TCO)膜利用射频磁控溅射制作而成,其厚度为10nm~50nm。
所述银(Ag)膜是利用直流磁控溅射或热蒸发制作而成,其厚度为8nm~20nm。
其制备方法为:选用柔性透明材料作为基底,以非晶氧化物作为沟道层,以可见光透过率≥90%的材料作为介质层,以传统TCO薄膜作为栅电极层,以银基透明导电多层膜作为源/漏电极层,制备共面结构。
所述共面结构为顶栅共面结构、底栅共面结构中的任意一种。
所述的源/漏电极层的工艺温度≤150℃。
所述的沟道层,其厚度为30nm~80nm。
进一步地,柔性全透明非晶氧化物薄膜晶体管的制备方法,包括以下步骤:
(1)在柔性透明基底上利用射频磁控溅射或直流磁控溅射法,辅以掩膜来制备TCO栅电极层,所述TCO栅电极层的厚度为60nm~100nm;
(2)在步骤(1)所得的TCO栅电极层上利用射频磁控溅射法制备无机介质层,辅以掩膜;
(3)在步骤(2)所得的介质层上依次利用射频磁控溅射、直流磁控溅射(或热蒸发)以及射频磁控溅射法形成银基透明导电多层膜;
(4)在步骤(3)所得的源/漏电极层上利用射频磁控溅射或直流磁控溅射法形成非晶氧化物沟道层薄膜,所述非晶氧化物沟道层薄膜的厚度为30nm~80nm,即得成品。
进一步地,柔性全透明非晶氧化物薄膜晶体管的制备方法,还可以包括以下步骤:
(1)在柔性透明基底上利用射频磁控溅射或直流磁控溅射法形成非晶氧化物沟道层薄膜,所述非晶氧化物沟道层薄膜的厚度为30nm~80nm,辅以掩膜;
(2)在步骤(1)所得的沟道层上依次形成SnO2:M薄膜、Ag膜、SnO2:M薄膜;
(3)在步骤(2)所得的源/漏电极层上利用溶胶凝胶法形成有机介质层;
(4)在步骤(3)所得的介质层上利用射频磁控溅射或直流磁控溅射法,辅以掩膜形成TCO栅电极层,所述TCO栅电极层的厚度为60nm~100nm,即得成品。
所述掩膜,其膜为Al2O3薄膜。
本发明的有益效果
1、作为非晶氧化物TFT源/漏电极层的银基透明导电多层膜,其中,TCO选用高价态差掺杂的银基透明导电氧化物薄膜,突破了局限于金属价态差为1的传统掺杂氧化物透明导电材料,减少了引入的离子杂质和载流子散射中心,通过提高薄膜的载流子迁移率,降低了SnO2:M薄膜电阻率,使得基于SnO2:M的银基透明导电多层膜具有更低电阻率和更高透射率。
2、银基透明导电多层膜中不含铟或锌元素,避免了因含铟氧化物电极中铟扩散或含锌氧化物电极的氧吸附对非晶氧化物TFT电学稳定性带来的不良影响。
3、将“银基透明导电多层膜”和“高价态差掺杂氧化锡基透明导电薄膜”的优点有机地结合起来,不仅获得了高可见光透过率及低电阻率的源/漏电极层,其中,可见光透过率高于80%,电阻率低于1×10-4Ω·cm,同时还保证了源/漏电极层与非晶氧化物沟道层间为欧姆接触。
4、本发明中的非晶氧化物薄膜晶体管具备良好电学性能、高可见光透过率,且其各组成部分的成膜工艺温度与柔性透明基底兼容,适用于新型柔性透明AMOLED技术的发展趋势。
附图说明
图1是基于银基透明导电多层膜的源/漏电极层的截面示意图。
图2是基于无机介质层的柔性全透明非晶氧化物薄膜晶体管结构的截面示意图。
图3是基于有机介质层的柔性全透明非晶氧化物薄膜晶体管结构的截面示意图。
具体实施方式
下面结合具体的实施方式来对本发明的技术方案做进一步的限定,但要求保护的范围不仅局限于所作的描述。
实施例1
使用PET作为基底,以非晶铟镓锌氧化物(In-Ga-Zn-O)薄膜作为沟道层,以无机Al2O3薄膜作为介质层,以ITO薄膜作为栅电极层,以掺钼(Mo)的SnO2透明导电氧化物和银膜构成的银基透明导电多层膜(SnO2:Mo/Ag/SnO2:Mo)作为源/漏电极层,所述银基透明导电多层膜结构如图1所示,制备底栅共面结构的柔性全透明非晶氧化物TFT,所述柔性全透明非晶氧化物TFT的结构如图2所示,具体步骤如下:
(1)在PET基底上利用射频磁控溅射法,辅以氧化铝掩膜形成厚度为80nm的ITO薄膜,其中,靶材选用纯度为4N的ITO陶瓷靶,溅射功率为25W,工作压强为0.7Pa;
(2)在步骤(1)所得的栅电极层上通过射频磁控溅射法形成厚度为200nm的Al2O3薄膜,其中,靶材选用纯度4N的氧化铝陶瓷靶,溅射功率为100W,工作压强为1.0Pa;
(3)在步骤(2)所得的介质层上形成银基透明导电多层膜,结合宽长比为500μm/100μm的氧化铝膜进行掩膜,其中,银基透明导电多层膜是依次利用射频磁控溅射、直流磁控溅射以及射频磁控溅射法分别形成厚度为30nm的SnO2:Mo薄膜、12nm的银薄膜以及30nm的SnO2:Mo薄膜,所述射频磁控溅射法,其溅射功率为20W,工作压强分别为0.8Pa,直流磁控溅射法,其直流功率为20W,工作压强为1.0Pa;所述SnO2:Mo薄膜,其中Mo元素的原子比为:Mo/(Mo+Sn)=0.03;
(4)在步骤(3)所得的源/漏电极层上采用射频磁控溅射法,辅以掩膜形成厚度为50nm的非晶铟镓锌氧化物薄膜,其中,靶材选用纯度为4N的铟镓锌氧化物靶,溅射功率为20W,工作压强为0.8Pa。
采用本制备方法所得的非晶铟镓锌氧化物TFT在可光区的平均透过率高于80%,开关比高于105,饱和迁移率大于3.0cm2/Vs。
实施例2
使用PET作为基底,以非晶铟镓锌氧化物(In-Ga-Zn-O)薄膜作为沟道层,以有机PMMA薄膜作为介质层,以ITO薄膜作为栅电极层,以掺钼(Mo)的SnO2透明导电氧化物和银膜构成的银基透明导电多层膜(SnO2:Mo/Ag/SnO2:Mo)作为源/漏电极层,所述银基透明导电多层膜结构如图1所示,制备顶栅共面结构的柔性全透明非晶氧化物TFT,所述柔性全透明非晶氧化物TFT的结构如图3所示,具体步骤如下:
(1)在PET基底上采用射频磁控溅射法形成厚度为50nm的非晶铟镓锌氧化物薄膜,靶材选用纯度为4N的铟镓锌氧化物靶,溅射功率为20W,工作压强为0.8Pa;
(2)在步骤(1)所得的沟道层上形成银基透明导电多层膜,结合宽长比为500μm/100μm的氧化铝膜进行掩膜,其中,银基透明导电多层膜是依次利用射频磁控溅射、直流磁控溅射以及射频磁控溅射法分别形成厚度为30nm的SnO2:Mo薄膜、12nm的银薄膜以及30nm的SnO2:Mo薄膜,所述射频磁控溅射法,其溅射功率为20W,工作压强分别为0.8Pa,直流磁控溅射法,其直流功率为20W,工作压强为1.0Pa;所述SnO2:Mo薄膜,其中Mo元素的原子比为:Mo/(Mo+Sn)=0.03;
(3)将步骤(2)所得的含源/漏电极层的沟道层浸入PMMA丙酮前驱体溶液,经提速为1.0mm/s的提拉涂覆后,置于温度为100℃的烘箱中烘烤30min,重复提拉涂覆以烘烤操作4次,形成厚度为300nm的有机PMMA薄膜;所述PMMA丙酮前驱体溶液是将纯PMMA粉末溶于丙酮溶剂中进行搅拌,得到浓度为60mg/mL的PMMA丙酮前驱体溶液;
(4)在步骤(3)所得的介质层上利用射频磁控溅射法,辅以氧化铝掩膜形成厚度为80nm的ITO薄膜,其中,靶材选用纯度为4N的ITO陶瓷靶,溅射功率为25W,工作压强为0.7Pa。
采用本制备方法所得的非晶铟镓锌氧化物TFT在可光区的平均透过率高于80%,开关比高于105,饱和迁移率大于3.0cm2/Vs。
Claims (5)
1.一种柔性全透明非晶氧化物薄膜晶体管的制备方法,其特征在于,选用柔性透明材料作为基底,以非晶氧化物作为沟道层,以可见光透过率≥90%的材料作为介质层,以传统TCO薄膜In2O3:Sn(ITO)、ZnO:Al(AZO)、ZnO:Ga(GZO)中任一种作为栅电极层,以银基透明导电多层膜作为源/漏电极层,制备共面结构;所述银基透明导电多层膜是由两层透明导电氧化物(TCO)膜及夹在两层透明导电氧化物(TCO)膜之间的银(Ag)膜构成,所述透明导电氧化物(TCO)膜,是包含Sn元素和M元素的高价态掺杂氧化锡基的氧化物SnO2:M;其中,氧化物SnO2:M中M元素的原子量为M/(M+Sn)=0~0.1,M元素为Cr、Mo、W中至少一种;其中,
当介质层为无机材料时,其制备方法包括以下步骤:
(1)在柔性透明基底上利用射频磁控溅射或直流磁控溅射法,辅以掩膜来制备TCO栅电极层,所述TCO栅电极层的厚度为60nm~100nm;
(2)在步骤(1)所得的TCO栅电极层上利用射频磁控溅射法制备无机介质层,辅以掩膜;
(3)在步骤(2)所得的介质层上依次利用射频磁控溅射、直流磁控溅射或热蒸法两种方法中任一方法以及射频磁控溅射法形成银基透明导电多层膜;
(4)在步骤(3)所得的源/漏电极层上利用射频磁控溅射或直流磁控溅射法形成非晶氧化物沟道层薄膜,所述非晶氧化物沟道层薄膜的厚度为30nm~80nm,即得成品;
当介质层为有机材料时,其制备方法包括以下步骤:
(1)在柔性透明基底上利用射频磁控溅射或直流磁控溅射法形成非晶氧化物沟道层薄膜,所述非晶氧化物沟道层薄膜的厚度为30nm~80nm,辅以掩膜;
(2)在步骤(1)所得的沟道层上依次形成SnO2:M薄膜、Ag膜、SnO2:M薄膜;
(3)在步骤(2)所得的源/漏电极层上利用溶胶凝胶法形成有机介质层;
(4)在步骤(3)所得的介质层上利用射频磁控溅射或直流磁控溅射法,辅以掩膜形成TCO栅电极层,所述TCO栅电极层的厚度为60nm~100nm,即得成品。
2.如权利要求1所述的柔性全透明非晶氧化物薄膜晶体管的制备方法,其特征在于,所述透明导电氧化物(TCO)膜利用射频磁控溅射制作而成,其厚度为10nm~50nm。
3.如权利要求1所述的柔性全透明非晶氧化物薄膜晶体管的制备方法,其特征在于,所述银(Ag)膜是利用直流磁控溅射或热蒸发制作而成,其厚度为8nm~20nm。
4.如权利要求1所述的柔性全透明非晶氧化物薄膜晶体管的制备方法,其特征在于,所述的源/漏电极层的工艺温度≤150℃。
5.如权利要求1所述的柔性全透明非晶氧化物薄膜晶体管的制备方法,其特征在于,所述的沟道层,其厚度为30nm~80nm。
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