WO2020094803A3 - Diodenlaser und verfahren zum betreiben eines diodenlasers - Google Patents

Diodenlaser und verfahren zum betreiben eines diodenlasers Download PDF

Info

Publication number
WO2020094803A3
WO2020094803A3 PCT/EP2019/080575 EP2019080575W WO2020094803A3 WO 2020094803 A3 WO2020094803 A3 WO 2020094803A3 EP 2019080575 W EP2019080575 W EP 2019080575W WO 2020094803 A3 WO2020094803 A3 WO 2020094803A3
Authority
WO
WIPO (PCT)
Prior art keywords
assigned
semiconductor body
section
operating
diode laser
Prior art date
Application number
PCT/EP2019/080575
Other languages
English (en)
French (fr)
Other versions
WO2020094803A2 (de
Inventor
Harald KÖNIG
Bernhard Stojetz
Alfred Lell
Muhammad Ali
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to US17/292,197 priority Critical patent/US12021351B2/en
Priority to JP2021523250A priority patent/JP7258134B2/ja
Priority to DE112019005619.0T priority patent/DE112019005619B4/de
Publication of WO2020094803A2 publication Critical patent/WO2020094803A2/de
Publication of WO2020094803A3 publication Critical patent/WO2020094803A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Der Diodenlaser (1000) umfasst einen Laserbarren mit einem Halbleiterkörper (1) und einer aktiven Schicht (11), wobei der Laserbarren mehrere Einzelemitter (2) aufweist. Zumindest einigen Einzelemittern sind jeweils ein Abschnitt (20) des Halbleiterkörpers und ein dazu in Serie geschaltetes Stromregelelement (21) zugeordnet, so dass im bestimmungsgemäßen Betrieb der Einzelemitter jeweils ein dem Einzelemitter zugeführter elektrischer Betriebsstrom I0 vollständig durch den zugeordneten Abschnitt des Halbleiterkörpers fließt und dabei an dem Abschnitt ein Spannungsabfall UH auftritt und zumindest ein Teil dieses Betriebsstroms l0 durch das zugeordnete Stromregelelement fließt und dabei einen elektrischen Widerstand RS erfährt. Bei den Einzelemittern ist das jeweils zugeordnete Stromregelelement so eingerichtet, dass der Widerstand Rg bei einer Betriebstemperatur T0 einen positiven Temperaturkoeffizienten dRS/dT|T0 aufweist. Alternativ oder zusätzlich ist der Widerstand RS größer als |ΔUH/I0, wobei ΔUH die Änderung des Spannungsabfalls UH am zugeordneten Abschnitt des Halbleiterkörpers bei Erhöhung der Temperatur T des Einzelemitters von einer Betriebstemperatur T0 um 1 K ist.
PCT/EP2019/080575 2018-11-08 2019-11-07 Diodenlaser und verfahren zum betreiben eines diodenlasers WO2020094803A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US17/292,197 US12021351B2 (en) 2018-11-08 2019-11-07 Diode laser and method for operating a diode laser
JP2021523250A JP7258134B2 (ja) 2018-11-08 2019-11-07 ダイオードレーザ及びダイオードレーザの動作方法
DE112019005619.0T DE112019005619B4 (de) 2018-11-08 2019-11-07 Diodenlaser und verfahren zum betreiben eines diodenlasers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018127977.9A DE102018127977A1 (de) 2018-11-08 2018-11-08 Diodenlaser und verfahren zum betreiben eines diodenlasers
DE102018127977.9 2018-11-08

Publications (2)

Publication Number Publication Date
WO2020094803A2 WO2020094803A2 (de) 2020-05-14
WO2020094803A3 true WO2020094803A3 (de) 2020-08-13

Family

ID=68583322

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2019/080575 WO2020094803A2 (de) 2018-11-08 2019-11-07 Diodenlaser und verfahren zum betreiben eines diodenlasers

Country Status (4)

Country Link
US (1) US12021351B2 (de)
JP (1) JP7258134B2 (de)
DE (2) DE102018127977A1 (de)
WO (1) WO2020094803A2 (de)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208823A (en) * 1991-09-03 1993-05-04 Applied Solar Energy Corporation Optically isolated laser diode array
JP2012212927A (ja) * 2012-07-03 2012-11-01 Sharp Corp 発光装置
WO2019042827A1 (de) * 2017-08-28 2019-03-07 Osram Opto Semiconductors Gmbh Kantenemittierender laserbarren

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4577321A (en) * 1983-09-19 1986-03-18 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
DE3534744A1 (de) * 1985-09-28 1987-04-09 Standard Elektrik Lorenz Ag Laservorrichtung mit stabilisierter ausgangsleistung
JPH06120577A (ja) 1992-02-25 1994-04-28 Mitsubishi Electric Corp 人工粒界の製造方法
JPH0715068A (ja) * 1993-06-24 1995-01-17 Nippon Telegr & Teleph Corp <Ntt> 多電極半導体レーザ駆動装置
JPH09320811A (ja) 1996-05-31 1997-12-12 Masuo Okada Ｐｔｃサーミスタ材料およびその製造方法
SE507376C2 (sv) * 1996-09-04 1998-05-18 Ericsson Telefon Ab L M Våglängdsavstämbar laseranordning
JP2000127466A (ja) 1998-10-22 2000-05-09 Fuji Xerox Co Ltd 記録ヘッドおよび記録装置
US6377599B1 (en) * 1999-01-12 2002-04-23 Iridex Corporation Focusability enhancing optic for a laser diode
US6351481B1 (en) * 1999-10-06 2002-02-26 Opto Power Corp Diode laser with screening window and method of fabrication
US6628686B1 (en) * 2001-11-16 2003-09-30 Fox-Tek, Inc Integrated multi-wavelength and wideband lasers
JP4493285B2 (ja) 2003-05-28 2010-06-30 京セラ株式会社 光半導体素子収納用パッケージおよび光半導体装置
ES2305428T3 (es) 2003-07-21 2008-11-01 Abb Research Ltd. Electroceramica metalizada irradiada por laser.
JP2005310849A (ja) * 2004-04-19 2005-11-04 Matsushita Electric Ind Co Ltd 半導体レーザ、半導体レーザ装置、及び半導体レーザの駆動方法
JP2006128236A (ja) 2004-10-27 2006-05-18 Mitsubishi Electric Corp 光半導体モジュール
JP2009105240A (ja) 2007-10-24 2009-05-14 Fuji Xerox Co Ltd 半導体発光装置
US8488245B1 (en) * 2011-03-07 2013-07-16 TeraDiode, Inc. Kilowatt-class diode laser system
JP2012059898A (ja) 2010-09-08 2012-03-22 Panasonic Corp 半導体レーザアレイ
JP5423708B2 (ja) 2011-03-29 2014-02-19 株式会社豊田中央研究所 異方形状粉末の製造方法
JP2013055186A (ja) 2011-09-02 2013-03-21 Stanley Electric Co Ltd 半導体発光素子アレイ及び車両用灯具
JP5919682B2 (ja) 2011-08-26 2016-05-18 富士通株式会社 半導体レーザ装置
US8891579B1 (en) * 2011-12-16 2014-11-18 Nlight Photonics Corporation Laser diode apparatus utilizing reflecting slow axis collimators
US8861082B2 (en) * 2012-02-21 2014-10-14 Corning Incorporated Method and apparatus for combining laser array light sources
GB2501509A (en) * 2012-04-25 2013-10-30 Oclaro Technology Ltd Laser device
KR20130121292A (ko) * 2012-04-27 2013-11-06 한국전자통신연구원 평면 도파로 소자
GB2506861A (en) 2012-10-09 2014-04-16 Oclaro Technology Ltd Optoelectronic assembly
JP6083194B2 (ja) 2012-11-06 2017-02-22 富士ゼロックス株式会社 面発光型半導体レーザアレイ装置、光源および光源モジュール
WO2015012025A1 (ja) * 2013-07-26 2015-01-29 シチズンホールディングス株式会社 レーザモジュール、光源装置、およびレーザモジュールの製造方法
JP6354468B2 (ja) 2014-09-02 2018-07-11 富士ゼロックス株式会社 乾燥装置、及び画像形成装置
DE102017109812A1 (de) 2016-05-13 2017-11-16 Osram Opto Semiconductors Gmbh Licht emittierender Halbleiterchip und Verfahren zur Herstellung eines Licht emittierenden Halbleiterchips
WO2018168430A1 (ja) * 2017-03-16 2018-09-20 パナソニックＩｐマネジメント株式会社 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム
EP3750218A4 (de) * 2018-02-06 2021-11-03 Nlight, Inc. Diodenlaservorrichtung mit fac-linsenstrahllenkung ausserhalb der ebene

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208823A (en) * 1991-09-03 1993-05-04 Applied Solar Energy Corporation Optically isolated laser diode array
JP2012212927A (ja) * 2012-07-03 2012-11-01 Sharp Corp 発光装置
WO2019042827A1 (de) * 2017-08-28 2019-03-07 Osram Opto Semiconductors Gmbh Kantenemittierender laserbarren

Also Published As

Publication number Publication date
JP7258134B2 (ja) 2023-04-14
WO2020094803A2 (de) 2020-05-14
DE102018127977A1 (de) 2020-05-14
DE112019005619B4 (de) 2022-09-29
US20210391695A1 (en) 2021-12-16
JP2022506089A (ja) 2022-01-17
US12021351B2 (en) 2024-06-25
DE112019005619A5 (de) 2021-07-15

Similar Documents

Publication Publication Date Title
KR20110091848A (ko) 바이폴라 다이오드 요소들로 밴드갭 오프셋을 트리밍하기 위한 시스템 및 방법
SG10201908583UA (en) Fat-based flavour concentrates and process for producing same
AR093799A1 (es) Gen plaguicida y uso del mismo
JP2008021726A (ja) トリミング回路及び半導体装置
WO2020094803A3 (de) Diodenlaser und verfahren zum betreiben eines diodenlasers
US20130027822A1 (en) Circuits including a diode string comprised of bipolar stages having an adjustable pseudo beta for esd protection
KR20180084667A (ko) 기판 프로세싱 방법
JP2015204661A (ja) 半導体素子駆動回路
JP2017028990A (ja) 電力制御用スイッチング素子の駆動回路
US8203506B2 (en) LED drive circuit
DE102013203929B4 (de) Verfahren zur ansteuerung eines halbleiterbauelements
DE102010015904B4 (de) Verfahren zur Ansteuerung einer elektrischen Last
WO2019025174A8 (de) Feldemissionsantriebssystem sowie verfahren zum kalibrieren und betreiben eines feldemissionsantriebssystems
WO2018059609A8 (en) A method for controlling the deposition rate of thin films in a vacuum multi-nozzle plasma system and a device for performing of the method
CN110462957B (zh) 用于运行电流分配装置的方法和电流分配装置
WO2014114486A3 (de) Anordnung und verfahren zum betreiben einer anordnung
WO2013135424A3 (de) Modulares serversystem, i/o-modul und switching-verfahren
GB201210561D0 (en) Current regulator
GEP20207148B (en) Methods for enchancing plant disease controlling effects of aryl phenyl ketone fungicide, and method for controlling plant diseases
AR108940A1 (es) Planta transgénica que tiene resistencia a herbicidas
MY198985A (en) Method for manufacturing light emitting element
JP6741034B2 (ja) 半導体レーザ装置
AR126546A1 (es) Sistemas y métodos para controlar en forma remota la operación de un implemento de cosecha para una cosechadora agrícola
US20160233214A1 (en) Semiconductor device
BR112021017579A2 (pt) Método para o controle de ervas daninhas

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19805154

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2021523250

Country of ref document: JP

Kind code of ref document: A

REG Reference to national code

Ref country code: DE

Ref legal event code: R225

Ref document number: 112019005619

Country of ref document: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19805154

Country of ref document: EP

Kind code of ref document: A2