WO2020077943A1 - 一种oled薄膜封装结构 - Google Patents

一种oled薄膜封装结构 Download PDF

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WO2020077943A1
WO2020077943A1 PCT/CN2019/078298 CN2019078298W WO2020077943A1 WO 2020077943 A1 WO2020077943 A1 WO 2020077943A1 CN 2019078298 W CN2019078298 W CN 2019078298W WO 2020077943 A1 WO2020077943 A1 WO 2020077943A1
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Prior art keywords
layer
trench
insulating layer
oled
thin film
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PCT/CN2019/078298
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English (en)
French (fr)
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尹雪兵
曹君
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武汉华星光电半导体显示技术有限公司
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Priority to US16/484,136 priority Critical patent/US20200295299A1/en
Publication of WO2020077943A1 publication Critical patent/WO2020077943A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements

Definitions

  • the invention relates to an OLED packaging structure, in particular to an OLED thin film packaging structure.
  • Organic light-emitting diode (Organic Light-Emitting Diode, OLED) has been widely used for its good self-luminous characteristics, superior contrast, fast response and flexible display.
  • the cathode materials are usually active metals with a low work function such as magnesium aluminum, etc. These light-emitting materials and cathode materials are very sensitive to moisture and oxygen, and water / oxygen penetration To greatly reduce the lifespan of OLEDs, in order to meet the requirements of commercialization for the lifespan and stability of OLEDs, OLEDs have very high requirements for packaging effects. Therefore, packaging is in a very important position in the production of OLEDs, which is one of the key factors affecting product yield.
  • Traditional OLED encapsulation technologies include: (1) Cover plate encapsulation technology: apply UV-curable sealant on the encapsulation glass / metal, or apply sealant and fill with desiccant to make the sealant provide a relative Sealed environment to prevent water and oxygen from entering; (2) Laser encapsulation technology: coating glass glue on the encapsulation glass and evaporating the solvent to become glass powder. After pairing the OLED substrate and the package cover, use a laser to melt the glass powder to achieve adhesion Together.
  • the above traditional packaging technology can achieve an effective water / oxygen barrier effect, but it will increase the thickness and weight of the device, which is not conducive to the preparation of flexible OLEDs.
  • the thin film packaging technology has emerged to overcome the shortcomings of the traditional packaging technology. It does not require the use of packaging cover plates and sealants to encapsulate OLEDs. Instead, thin film packaging is used instead of traditional glass packaging to achieve large-size OLED Packaging, and make OLED thinner and lighter.
  • the so-called thin film encapsulation is to form an inorganic-organic alternating layer on the surface of the OLED to block water and oxygen by depositing a thin film.
  • the inorganic layer (mainly composed of silicon oxide, silicon nitride, etc.) is an effective water / oxygen barrier layer
  • the role of the organic layer mainly composed of high-molecular polymers, resins, etc.
  • the organic layer is mainly formed by inkjet printing (IJP).
  • FIG. 9 which illustrates an existing OLED thin film packaging structure, which includes a base substrate 910, an OLED layer 920 provided on the base substrate 910, and three layers provided on the OLED layer 920 A highly variable retaining wall structure 940, a thin film encapsulation layer 930 disposed on the base substrate 910 and the retaining wall structure 940 and covering the retaining wall structure 940.
  • the retaining wall structure 940 is usually made of organic materials, and these organic material structures easily form a path of lateral invasion of water vapor, and due to the poor natural adhesion between the organic material and the inorganic material, there is a retaining wall structure 940 and a thin film package The peeling between the first inorganic layers in layer 930 creates a risk of package failure.
  • the object of the present invention is to provide an OLED thin film packaging structure to solve the problems of ink overflow, water and oxygen intrusion, and package / coating failure caused by peeling of organic / inorganic layers in the prior art.
  • the present invention provides an OLED thin film packaging structure, including: a substrate, an insulating layer, a display layer, and a thin film packaging layer.
  • the insulating layer is provided with a first trench and wraps the display layer inside
  • the thin film encapsulation layer includes a first inorganic layer and a first organic layer, wherein the first inorganic layer corresponds to the first
  • the position of a trench is in contact with the insulating layer downward, the thickness of the first inorganic layer is less than the depth of the closed trench, and then the remaining part of the first trench is not affected by the first inorganic layer
  • the downward depth of coverage limits the boundary of the first organic layer.
  • the insulating layer includes a gate insulating layer and a passivation insulating layer
  • the first trench is provided downward in the passivation insulating layer.
  • the bottom of the closed trench may be in contact with the surface of the gate insulating layer, that is, the first trench cuts off the passivation insulating layer; it may not be connected to the gate insulating layer
  • the surfaces are in contact, but only in the passivation insulating layer. The specifics can be determined according to needs and are not limited.
  • the insulating layer includes a gate insulating layer and a passivation insulating layer
  • the first trench is disposed downwardly on the gate insulating layer through the passivation insulating layer in.
  • the bottom of the first trench may be in contact with the surface of the substrate, that is, the first trench cuts off the passivation insulating layer and the gate insulating layer; the first The bottom of the trench may not be in contact with the surface of the substrate, but only in the gate insulating layer.
  • the specifics can be determined as needed, and there is no limit.
  • the width of the first closed groove is 10-100 ⁇ m.
  • the depth of the first closed groove is 0.5-2 ⁇ m.
  • the first trench type is composed of multiple sections of independent groove structures
  • these independent groove structure walls cooperate with each other to surround the display layer therein.
  • the shape of the independent groove structure can be various, for example, L-shaped groove, U-shaped groove, arc-shaped groove, etc., as long as these independent grooves are matched with each other to form a substantially closed overall groove structure, It is sufficient to surround the display layer.
  • the thin film encapsulation layer further includes a second inorganic layer
  • the second inorganic layer covers the first organic layer, and at the same time completely covers the first trench.
  • a second trench is further provided on the insulating layer, and the first trench is enclosed therein.
  • the material of the insulating layer may be silicon nitride, or silicon oxide and silicon oxynitride.
  • the specifics can be determined as needed, and there is no limit.
  • the display layer includes a planarization layer, a pixel definition layer, and an OLED layer.
  • the planarization layer is provided on the surface of the passivation insulating layer
  • the pixel definition layer is provided on the surface of the planarization layer
  • the OLED layer is provided on the surface of the pixel definition layer.
  • the beneficial effect of the present invention is that the present invention provides an OLED thin-film encapsulation structure, which uses a new trench structure to replace the existing retaining wall structure, so that the first inorganic layer of the thin-film encapsulation structure can be directly Direct contact with the inorganic layer in the OLED structure, while extending the lateral invasion path of water and oxygen, it can also eliminate the encapsulation caused by the peeling of the inorganic / organic film layer in the prior art because of the direct contact between the two inorganic layers Failure risk.
  • the trench structure has a certain depth, it will not be completely covered by the first inorganic layer of the thin-film encapsulation structure, and the remaining uncovered portion thereof can serve to define the thin-film encapsulation structure
  • the boundary function of the first organic layer solves the ink overflow problem.
  • Example 1 is a schematic cross-sectional view of an OLED thin film packaging structure in Example 1 of the present invention.
  • Example 2 is a schematic top view of an OLED thin film packaging structure in Example 1 of the present invention.
  • Example 3 is a schematic cross-sectional view of an OLED thin film packaging structure in Example 2 of the present invention.
  • Example 4 is a schematic cross-sectional view of an OLED thin film packaging structure in Example 3 of the present invention.
  • Example 5 is a schematic top view of an OLED thin film packaging structure in Example 3 of the present invention.
  • Example 6 is a schematic cross-sectional view of an OLED thin film packaging structure in Example 4 of the present invention.
  • Example 7 is a schematic top view of an OLED thin film packaging structure in Example 5 of the present invention.
  • Example 8 is a schematic top view of an OLED film packaging structure according to Example 6 of the present invention.
  • FIG. 9 is a schematic cross-sectional view of a conventional OLED thin film packaging structure.
  • connection should be understood in a broad sense, for example, it can be fixed connection or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • installation should be understood in a broad sense, for example, it can be fixed connection or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • the present invention provides an OLED packaging structure, including a substrate 110, an insulating layer 120, a display layer 130, and a thin film encapsulation layer 140.
  • the substrate 110 includes a flexible substrate 111 and a buffer layer 112.
  • the buffer layer 112 is provided on the surface of the flexible substrate 111.
  • the flexible substrate 111 that is, the polyimide film, serves as the base of the flexible display panel; the polyimide film is the thinnest film insulating material with the best performance in the world, with strong tensile strength, and is made of pyromellitic acid
  • the dianhydride and diaminodiphenyl ether are formed by polycondensation and casting into a film in a strong polar solvent and then imidization.
  • the insulating layer 120 includes a gate insulating layer 121 and a passivation insulating layer 122, the gate insulating layer 121 is disposed on the surface of the buffer layer 112; the passivation insulating layer 122 is disposed on the surface of the gate insulating layer 121, and the gate insulating layer 121 completely covered.
  • the materials of the gate insulating layer 121 and the passivation insulating layer 122 are silicon nitride, and silicon oxide, silicon oxynitride, or the like may also be used.
  • the display layer 130 includes a planarization layer 131, a pixel definition layer 132, and an OLED layer 133.
  • the planarization layer 131 is provided on the surface of the passivation insulating layer 122
  • the pixel definition layer 132 is provided on the surface of the planarization layer 131
  • the OLED layer 133 is provided on the surface of the pixel definition layer 132.
  • the planarization layer 131 and the pixel definition layer 132 are made of transparent organic materials, have good elasticity and flexibility, and play a role in planarization and buffering the stress of the film layer.
  • the thin film encapsulation layer 140 includes a first inorganic layer 141, a first organic layer 142, and a second inorganic layer 143.
  • the insulating layer 120 is provided with a first trench 151 and wraps the display layer 130 therein.
  • the first inorganic layer 141 is in contact with the insulating layer 120 downward corresponding to the position of the first trench 151, the thickness of the first inorganic layer 141 is less than the depth of the first trench 151, and the first trench 151 is not covered by the first inorganic layer
  • the depth covered by 141 is used to deposit the first organic layer 142. This arrangement restricts the boundary of the first organic layer, thereby solving the problem of ink overflow.
  • the second inorganic layer 143 covers the first organic layer 142 and at the same time completely covers the first trench 151.
  • the first trench 151 is disposed in the passivation insulating layer 122, and the bottom thereof is in contact with the surface of the gate insulating layer 121, that is, the passivation insulating layer 122 is blocked.
  • the bottom of the first trench 151 may not be in contact with the surface of the gate insulating layer 121, but only in the passivation insulating layer 122.
  • the specifics can be determined according to needs and are not limited.
  • the width range of the first trench 151 is 10-100 ⁇ m, and the depth range is 0.5-2 ⁇ m.
  • the present invention provides an OLED packaging structure, including a substrate 110, an insulating layer 120, a display layer 130, and a thin film encapsulation layer 140.
  • the substrate 110 includes a flexible substrate 111 and a buffer layer 112.
  • the buffer layer 112 is provided on the surface of the flexible substrate 111.
  • the flexible substrate 111 that is, the polyimide film, serves as the base of the flexible display panel; the polyimide film is the thinnest film insulating material with the best performance in the world, with strong tensile strength, and is made of pyromellitic acid
  • the dianhydride and diaminodiphenyl ether are formed by polycondensation and casting into a film in a strong polar solvent and then imidization.
  • the insulating layer 120 includes a gate insulating layer 121 and a passivation insulating layer 122, the gate insulating layer 121 is disposed on the surface of the buffer layer 112; the passivation insulating layer 122 is disposed on the surface of the gate insulating layer 121, and the gate insulating layer 121 completely covered.
  • the materials of the gate insulating layer 121 and the passivation insulating layer 122 are silicon nitride, and silicon oxide, silicon oxynitride, or the like may also be used.
  • the display layer 130 includes a planarization layer 131, a pixel definition layer 132, and an OLED layer 133.
  • the planarization layer 131 is provided on the surface of the passivation insulating layer 122
  • the pixel definition layer 132 is provided on the surface of the planarization layer 131
  • the OLED layer 133 is provided on the surface of the pixel definition layer 132.
  • the planarization layer 131 and the pixel definition layer 132 are made of transparent organic materials, have good elasticity and flexibility, and play a role in planarization and buffering the stress of the film layer.
  • the thin film encapsulation layer 140 includes a first inorganic layer 141, a first organic layer 142, and a second inorganic layer 143.
  • the insulating layer 120 is provided with a first trench 151 and wraps the display layer 130 therein.
  • the first inorganic layer 141 is in contact with the insulating layer 120 downward corresponding to the position of the first trench 151.
  • the thickness of the first inorganic layer 141 is less than the depth of the first trench 151.
  • the depth covered by 141 is used to deposit the first organic layer 142. This arrangement restricts the boundary of the first organic layer, thereby solving the problem of ink overflow.
  • the second inorganic layer 143 covers the first organic layer 142 and at the same time completely covers the first trench 151.
  • the first trench 151 is disposed in the passivation insulating layer 122, and the bottom thereof is in contact with the surface of the gate insulating layer 121, that is, the passivation insulating layer 122 is blocked.
  • the bottom of the first trench 151 may not be in contact with the surface of the gate insulating layer 121, but only in the passivation insulating layer 122.
  • the specifics can be determined according to needs and are not limited.
  • the width range of the first trench 151 is 10-100 ⁇ m, and the depth range is 0.5-2 ⁇ m.
  • the OLED thin film packaging structure in this embodiment is substantially the same as that in Embodiment 1, and the same structure can be referred to the above method, which is not repeated here.
  • the main difference is that the first trench 251 passes through the blunt
  • the insulating layer 122 is disposed in the gate insulating layer 121, and the bottom thereof is in contact with the surface of the substrate 110, that is, the first trench 251 blocks the passivation insulating layer 132 and the gate insulating layer 131.
  • the bottom of the first trench 251 may not be in contact with the surface of the substrate 110, but only in the gate insulating layer 121.
  • the specifics can be determined according to needs and are not limited.
  • the OLED thin film packaging structure in this embodiment is substantially the same as that in Embodiment 1, and the same structure can be referred to the above method, which is not repeated here.
  • the main difference is that the passivation insulating layer 122 A second groove 352 is also provided in it, and the first groove 351 is enclosed therein. This arrangement extends the path of lateral invasion of water and oxygen.
  • the bottoms of the first trench 351 and the second trench 352 are in contact with the surface of the gate insulating layer 121, that is, the first trench 351 and the second trench 352 block the passivation insulating layer 122.
  • the bottoms of the first trench 351 and the second trench 352 may not be in contact with the surface of the gate insulating layer 121, but only in the passivation insulating layer 122.
  • the specifics can be determined according to needs and are not limited.
  • the OLED thin film packaging structure in this embodiment is substantially the same as that in Embodiment 2, and the same structure can be referred to the above method, which is not repeated here.
  • the main difference is that the gate insulating layer 121 is also provided There is a second trench 452, and the first trench 451 is enclosed therein.
  • the bottoms of the first trench 451 and the second trench 452 are in contact with the surface of the substrate 110, that is, the first trench 451 and the second trench 452 block the gate insulating layer 121 and the passivation insulating layer 122.
  • the bottoms of the first trench 451 and the second trench 452 may not be in contact with the surface of the substrate 110, but only in the gate insulating layer 121.
  • the specifics can be determined according to needs and are not limited.
  • the OLED thin film packaging structure in this embodiment is substantially the same as that in Embodiment 1, and the same structure can be referred to the above method, which is not repeated here.
  • the main difference is that the first trench is composed of multiple segments
  • the groove structure consists of U-shaped grooves 551.
  • the OLED thin film packaging structure in the embodiment is substantially the same as that in the embodiment 1, and the same structure can be referred to the above method, which is not repeated here.
  • the main difference is that the first trench is composed of multiple independent trench structures Composition, the shape of these independent grooves is an arc-shaped groove 651.
  • the shape of the first groove is not limited to the shape shown in FIGS. 1 to 8, but may also be other continuous or discontinuous overlapping heterosexual structures. It is only necessary that these groove structures can be matched with each other to form a substantially closed
  • the overall groove structure is sufficient to surround the display layer 130 therein.

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Abstract

本发明公开了一种OLED薄膜封装结构，包括基板、绝缘层、显示层和薄膜封装层，绝缘层上设有第一沟槽并将显示层包裹于内，薄膜封装层包括第一无机层和第一有机层，所述第一无机层对应于所述第一沟槽向下与所述绝缘层相接，其厚度小于所述第一沟槽的深度，进而通过所述第一沟槽剩余的未被所述第一无机层所覆盖的向下深度来限制所述第一有机层的边界。使得薄膜封装结构的第一无机层能够直接与OLED结构中的无机层直接接触，在延长水氧侧向入侵路径的同时，还能因为两无机层之间的直接接触而消除现有技术中存在的由于无机/有机膜层剥离导致的封装失效风险。

Description

一种OLED薄膜封装结构 技术领域
本发明涉及一种OLED的封装结构，特别涉及一种OLED薄膜封装结构。
 背景技术
有机电致发光二极管（Organic Light-Emitting Diode，OLED）以其良好的自发光特性、优越的对比度、快速响应以及柔性显示等优势，得到了广泛的应用。
由于OLED中的发光材料通常为聚合物或有机小分子，阴极材料通常为功函数较低的活泼金属如镁铝等，这些发光材料与阴极材料对水汽和氧气非常敏感，水/氧的渗透会大大缩减OLED的寿命，为了达到商业化对于OLED的使用寿命和稳定性的要求，OLED对于封装效果的要求非常高。因此，封装在OLED制作中处于非常重要的位置，是影响产品良率的关键因素之一。
传统的OLED封装技术包括：（1）盖板封装技术：在封装玻璃/金属上涂覆可以紫外固化的框胶、或者涂敷框胶并填充干燥剂，使框胶固化后为OLED提供一个相对密闭的环境，从而隔绝水氧进入；（2）镭射封装技术：在封装玻璃上涂布玻璃胶，挥发溶剂后成为玻璃粉，OLED基板和封装盖板对组后，使用激光熔化玻璃粉实现粘合。以上传统的封装技术可以达到有效的水/氧阻隔效果，但是会增加器件的厚度和重量，因此不利于制备柔性OLED。
近些年，应运而生的薄膜封装技术巧妙地克服了传统封装技术的弊端，不需要使用封装盖板和框胶来封装OLED，而是采用薄膜封装代替传统的玻璃封装，可以实现大尺寸OLED的封装，并且使得OLED轻薄化。所谓的薄膜封装，就是在OLED表面形成无机-有机交替层，以沉积薄膜的方式阻隔水氧，其中无机层（主要成分为硅氧化物、硅氮化物等）为水/氧的有效阻挡层，但是在制备无机层的过程中会产生一些针孔或者异物缺陷，而有机层（主要成分为高分子聚合物、树脂等）的作用就是覆盖无机层的缺陷，实现平坦化，可以释放无机层之间的应力，实现柔性封装。其中有机层的主要通过喷墨打印（IJP）的方式形成。
由于有机层和无机层的接触面特性不一致，有机层喷墨涂布时在无机层表面会出现墨水扩散不均匀、边缘不齐整、墨水流淌等现象。现有技术中，通常会采取多条挡墙来阻止墨水溢出。
参阅图9，其图示了一种现有OLED薄膜封装结构的，其包括衬底基板910、设于所述衬底基板910上的OLED层920、设于所述OLED层920上的三层高度递变的挡墙结构940、设于所述衬底基板910与所述挡墙结构940上且覆盖所述挡墙结构940的薄膜封装层930。
挡墙结构940通常是由有机材料制成，这些有机材料结构容易形成水汽侧向入侵的路径，而且由于有机材料与无机材料间的天然粘附性较差，因此存在挡墙结构940与薄膜封装层930中的第一无机层之间发生剥离，产生封装失效的风险。　
因此确有必要来开发一种新型的OLED薄膜封装结构，以克服现有技术的缺陷。
 技术问题
本发明的目的是提供一种OLED薄膜封装结构，以解决现有技术中存在的墨水溢出、水氧入侵、有机/无机层剥离导致的封装失效等问题。
 技术解决方案
为实现上述目的，本发明提供一种OLED薄膜封装结构，包括：基板、绝缘层、显示层和薄膜封装层。其中所述绝缘层上设置有第一沟槽并将所述显示层包裹于内，所述薄膜封装层包括第一无机层和第一有机层，其中所述第一无机层对应于所述第一沟槽的位置向下与所述绝缘层相接，所述第一无机层的厚度小于所述封闭槽的深度，进而通过所述第一沟槽剩余的未被所述第一无机层所覆盖的向下深度来限制所述第一有机层的边界。
进一步的，在不同实施方式中，其中所述绝缘层包括栅极绝缘层和钝化绝缘层，其中所述第一沟槽向下设在所述钝化绝缘层中。其中在不同实施方式中，所述封闭槽的底部可以是与所述栅极绝缘层表面相接，即所述第一沟槽隔断所述钝化绝缘层；也可不与所述栅极绝缘层表面相接，只是位于所述钝化绝缘层内。具体可随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述绝缘层包括栅极绝缘层和钝化绝缘层，其中所述第一沟槽穿过所述钝化绝缘层向下设在所述栅极绝缘层中。在不同实施方式中，所述第一沟槽的底部可以是与所述基板表面相接，即所述第一沟槽隔断所述钝化绝缘层和所述栅极绝缘层；所述第一沟槽的底部也可以不与所述基板表面相接，只是位于所述栅极绝缘层中。具体可以随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述第一封闭槽的宽度范围是10-100μm。
进一步的，在不同实施方式中，其中所述第一封闭槽的的深度范围是0.5-2μm。
进一步的，在不同实施方式中，其中所述第一沟槽式由多段独立槽结构构成，这些独立槽结构墙后相互配合将所述显示层围绕于其内。其中采用的独立槽结构的形状可以式多种的，例如，L型槽、U型槽、弧形槽等等，只需这些独立槽前后相互配合相接，形成一个大致封闭的整体槽结构，并将所述显示层围绕于其内即可。
进一步的，在不同实施方式中，其中所述薄膜封装层还包括第二无机层，所述第二无机层覆盖在所述第一有机层上，并同时完全覆盖所述第一沟槽。
进一步的，在不同实施方式中，其中所述绝缘层上还设置有第二沟槽，其将所述第一沟槽封闭于其内。
进一步的，在不同实施方式中，其中所述绝缘层的材料可以采用氮化硅，也可以采用氧化硅和氮氧化硅。具体可以随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述显示层包括平坦化层、像素定义层以及OLED层。平坦化层设置于钝化绝缘层的表面，像素定义层设置于平坦化层表面，OLED层设置于像素定义层的表面。
 有益效果
相对于现有技术，本发明的有益效果在于：本发明提供一种OLED薄膜封装结构，其采用全新的沟槽结构来代替现有的挡墙结构，使得薄膜封装结构的第一无机层能够直接与OLED结构中的无机层直接接触，在延长水氧侧向入侵路径的同时，还能因为两无机层之间的直接接触而消除现有技术中存在的由于无机/有机膜层剥离导致的封装失效风险。
进一步的，所述沟槽结构由于存在一定的深度，且不会被所述薄膜封装结构的第一无机层完全覆盖，其剩余的未被覆盖的部分则可起到限定所述薄膜封装结构中的第一有机层的边界作用，即解决了墨水溢出问题。
 附图说明
图1为本发明实施例1中OLED薄膜封装结构的剖视示意图；
图2为本发明实施例1中OLED薄膜封装结构的俯视示意图；
图3为本发明实施例2中OLED薄膜封装结构的剖视示意图；
图4为本发明实施例3中OLED薄膜封装结构的剖视示意图；
图5为本发明实施例3中OLED薄膜封装结构的俯视示意图；
图6为本发明实施例4中OLED薄膜封装结构的剖视示意图；
图7为本发明实施例5中OLED薄膜封装结构的俯视示意图；
图8为本发明实施例6的OLED薄膜封装结构的俯视示意图；
图9为现有的OLED薄膜封装结构的剖视示意图。
 本发明的最佳实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本发明的示例性实施例的目的。但是本发明可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本发明的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，属于“第一”“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定由“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
参阅图2和图3，本发明提供一种OLED封装结构，包括基板110、绝缘层120、显示层130以及薄膜封装层140。
基板110包括柔性基板111和缓冲层112，缓冲层112设置于柔性基板111的表面。柔性基板111，即聚酰亚胺薄膜，作为柔性显示面板的基底；所述聚酰亚胺薄膜是世界上性能最好的薄膜类绝缘材料，具有较强的拉伸强度，由均苯四甲酸二酐和二氨基二苯醚在强极性溶剂中经缩聚并流延成膜再经亚胺化而成。
绝缘层120包括栅极绝缘层121和钝化绝缘层122，栅极绝缘层121设置于缓冲层112的表面；钝化绝缘层122设置于栅极绝缘层121的表面，并将栅极绝缘层121完全覆盖。在本实施例中，栅极绝缘层121和钝化绝缘层122的材料为氮化硅，也可以使用氧化硅和氮氧化硅等。
显示层130包括平坦化层131、像素定义层132以及OLED层133。平坦化层131设置于钝化绝缘层122的表面，像素定义层132设置于平坦化层131表面，OLED层133设置于像素定义层132的表面。平坦化层131和像素定义层132采用透明的有机材料，具有良好的弹性和柔韧性，起到平坦化及缓冲膜层应力的作用。
薄膜封装层140包括第一无机层141、第一有机层142和第二无机层143。绝缘层120上设置有第一沟槽151并将显示层130包裹于内。第一无机层141对应于第一沟槽151的位置向下与绝缘层120相接，第一无机层141的厚度小于第一沟槽151的深度，第一沟槽151未被第一无机层141所覆盖的深度用来沉积第一有机层142，这样的设置方式限制了第一有机层的边界，进而解决了墨水溢出的问题。
第二无机层143覆盖在第一有机层142上，并同时完全覆盖第一沟槽151。
具体的，第一沟槽151设置于钝化绝缘层122内，其底部与栅极绝缘层121表面相接，即隔断了钝化绝缘层122。在其他实施例中，第一沟槽151的底部也可不与栅极绝缘层121表面相接，只是位于钝化绝缘层122内。具体可随需要而定，并无限定。
第一沟槽151的宽度范围是10-100μm，深度范围是0.5-2μm。
实施例1
参阅图2和图3，本发明提供一种OLED封装结构，包括基板110、绝缘层120、显示层130以及薄膜封装层140。
基板110包括柔性基板111和缓冲层112，缓冲层112设置于柔性基板111的表面。柔性基板111，即聚酰亚胺薄膜，作为柔性显示面板的基底；所述聚酰亚胺薄膜是世界上性能最好的薄膜类绝缘材料，具有较强的拉伸强度，由均苯四甲酸二酐和二氨基二苯醚在强极性溶剂中经缩聚并流延成膜再经亚胺化而成。
绝缘层120包括栅极绝缘层121和钝化绝缘层122，栅极绝缘层121设置于缓冲层112的表面；钝化绝缘层122设置于栅极绝缘层121的表面，并将栅极绝缘层121完全覆盖。在本实施例中，栅极绝缘层121和钝化绝缘层122的材料为氮化硅，也可以使用氧化硅和氮氧化硅等。
显示层130包括平坦化层131、像素定义层132以及OLED层133。平坦化层131设置于钝化绝缘层122的表面，像素定义层132设置于平坦化层131表面，OLED层133设置于像素定义层132的表面。平坦化层131和像素定义层132采用透明的有机材料，具有良好的弹性和柔韧性，起到平坦化及缓冲膜层应力的作用。
薄膜封装层140包括第一无机层141、第一有机层142和第二无机层143。绝缘层120上设置有第一沟槽151并将显示层130包裹于内。第一无机层141对应于第一沟槽151的位置向下与绝缘层120相接，第一无机层141的厚度小于第一沟槽151的深度，第一沟槽151未被第一无机层141所覆盖的深度用来沉积第一有机层142，这样的设置方式限制了第一有机层的边界，进而解决了墨水溢出的问题。
第二无机层143覆盖在第一有机层142上，并同时完全覆盖第一沟槽151。
具体的，第一沟槽151设置于钝化绝缘层122内，其底部与栅极绝缘层121表面相接，即隔断了钝化绝缘层122。在其他实施例中，第一沟槽151的底部也可不与栅极绝缘层121表面相接，只是位于钝化绝缘层122内。具体可随需要而定，并无限定。
第一沟槽151的宽度范围是10-100μm，深度范围是0.5-2μm。
实施例2
参阅图3，本实施例中的OLED薄膜封装结构与实施例1大致相同，其相同的结构可参照上述方式，此处不再赘述，其主要不同之处在于，第一沟槽251穿过钝化绝缘层122设置于栅极绝缘层121中，其底部与基板110表面相接，即第一沟槽251隔断了钝化绝缘层132和栅极绝缘层131。在其他实施例中，第一沟槽251的底部也可不与基板110表面相接，只是位于栅极绝缘层121内。具体可随需要而定，并无限定。
实施例3
参阅图4和图5，本实施例中的OLED薄膜封装结构与实施例1大致相同，其相同的结构可参照上述方式，此处不再赘述，其主要不同之处在于，钝化绝缘层122中还设置有第二沟槽352，并将第一沟槽351封闭于其内，这样的设置方式延长了水氧侧向入侵的路径。第一沟槽351和第二沟槽352的底部与栅极绝缘层121表面相接，即第一沟槽351和第二沟槽352隔断钝化绝缘层122。在其他实施例中，第一沟槽351和第二沟槽352的底部也可不与栅极绝缘层121表面相接，只是位于钝化绝缘层122内。具体可随需要而定，并无限定。
实施例4
参阅图6，本实施例中的OLED薄膜封装结构与实施例2大致相同，其相同的结构可参照上述方式，此处不再赘述，其主要不同之处在于，栅极绝缘层121中还设置有第二沟槽452，并将第一沟槽451封闭于其内。第一沟槽451和第二沟槽452的底部与基板110表面相接，即第一沟槽451和第二沟槽452阻隔了栅极绝缘层121和钝化绝缘层122。在其他实施例中，第一沟槽451和第二沟槽452的底部也可不与基板110表面相接，只是位于栅极绝缘层121内。具体可随需要而定，并无限定。
实施例5
参阅图7，本实施例中的OLED薄膜封装结构与实施例1大致相同，其相同的结构可参照上述方式，此处不再赘述，其主要不同之处在于，第一沟槽是由多段独立槽结构组成，这些独立槽的形状为U型槽551。
实施例6
参阅图8，实施例中的OLED薄膜封装结构与实施例1大致相同，其相同的结构可参照上述方式，此处不再赘述，其主要不同之处在于第一沟槽是由多段独立槽结构组成，这些独立槽的形状为弧形槽651。
第一沟槽的形状不限于图1至图8所示的形状，还可以是其他连续或非连续交叠的异性结构，只需要要这些槽结构能够前后相互配合相接，形成一个大致封闭的整体槽结构，并将显示层130围绕于其内即可。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种OLED薄膜封装结构，包括基板、绝缘层、显示层和薄膜封装层，其中，所述绝缘层上设有第一沟槽并将所述显示层包裹于内，所述薄膜封装层包括第一无机层和第一有机层，所述第一无机层对应于所述第一沟槽向下与所述绝缘层相接，其厚度小于所述第一沟槽的深度，进而通过所述第一沟槽剩余的未被所述第一无机层所覆盖的向下深度来限制所述第一有机层的边界。
  2. 如权利要求1所述的一种OLED薄膜封装结构，其中，所述绝缘层包括栅极绝缘层和钝化绝缘层，所述第一沟槽设在所述钝化绝缘层中。
  3. 如权利要求2所述的一种OLED薄膜封装结构，其中，所述第一沟槽穿过所述钝化绝缘层设在所述栅极绝缘层中。
  4. 如权利要求1所述的一种OLED薄膜封装结构，其中，所述第一沟槽的宽度范围是10-100μm。
  5. 如权利要求1所述的一种OLED薄膜封装结构，其中，所述第一沟槽的深度范围是0.5-2μm。
  6. 如权利要求1所述的一种OLED薄膜封装结构，其中，所述第一沟槽是由多段独立槽构成，所述独立槽的形状可以是L型槽、U型槽、弧形槽。
  7. 如权利要求1所述的一种OLED薄膜封装结构，其中，所述薄膜封装才还包括第二无机层，其覆盖在第一有机层上，并同时完全覆盖所述第一沟槽。
  8. 如权利要求1所述的一种OLED薄膜封装结构，其中，所述绝缘层上还设有第二沟槽，其将所述第一沟槽封闭于其内。
  9. 如权利要求1所述的一种OLED薄膜封装结构，其中，所述绝缘层的材料采用氮化硅。
  10. 如权利要求1所述的一种OLED薄膜封装结构，其中，所述显示层包括平坦化层、像素定义层以及OLED层。平坦化层设置于钝化绝缘层的表面，像素定义层设置于平坦化层表面，OLED层设置于像素定义层的表面。
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