WO2020037741A1 - Tft阵列基板及其制作方法 - Google Patents

Tft阵列基板及其制作方法 Download PDF

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Publication number
WO2020037741A1
WO2020037741A1 PCT/CN2018/105545 CN2018105545W WO2020037741A1 WO 2020037741 A1 WO2020037741 A1 WO 2020037741A1 CN 2018105545 W CN2018105545 W CN 2018105545W WO 2020037741 A1 WO2020037741 A1 WO 2020037741A1
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Prior art keywords
tft array
passivation layer
pixel
photoresist
blue sub
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PCT/CN2018/105545
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English (en)
French (fr)
Inventor
李培宏
宋江江
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/342,544 priority Critical patent/US20200057329A1/en
Publication of WO2020037741A1 publication Critical patent/WO2020037741A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Definitions

  • the present application relates to the field of display technology, and in particular, to a TFT array substrate and a manufacturing method thereof.
  • Liquid crystal display devices have many advantages such as thin body, power saving, no radiation, etc., and have been widely used. Such as LCD TVs, mobile phones, PDAs, computer screens and laptop screens.
  • a thin film transistor liquid crystal display includes a color filter, a thin film transistor array substrate (TFT substrate), and a liquid crystal layer.
  • the color filter provides red / green / blue color, and is currently manufactured using photoresist.
  • the pattern of the subpixels actually produced is in a bowl shape, and the width of the depression is more than 0.5 micrometers, which causes the chromaticity difference between the center position and the edge position of the subpixel to be too large, greater than 0.004.
  • the specification is ⁇ 0.002, resulting in poor product color, the most obvious of which is the blue sub-pixel.
  • the embodiments of the present application provide a TFT array substrate and a manufacturing method thereof; in order to solve the blue sub-pixels of the existing TFT array substrates being concave, the chromaticity difference between the center position and the edge position of the blue sub-pixels is too large, thereby affecting Technical issues with product color.
  • TFT array substrate which includes:
  • the color filter layer is disposed on the TFT array layer and includes a plurality of color resist units.
  • the plurality of color resist units are respectively filled with a red photoresist, a green photoresist, and a blue photoresist, and correspondingly form red.
  • Sub-pixels, green sub-pixels and blue sub-pixels, the thickness of the area on both sides of the blue sub-pixel is greater than the thickness of the middle area of the blue sub-pixel;
  • a passivation layer disposed on the color filter layer comprising a passivation layer body covering the color filter layer and a convex portion protruding on the passivation layer body;
  • a pixel electrode layer disposed on the passivation layer
  • the convex portions are correspondingly disposed above the regions on both sides of the blue sub-pixel, the thickness of the convex portions is 0.3 ⁇ m to 0.5 ⁇ m, and the width of the convex portions is 1 / the width of the blue sub-pixel. 5 ⁇ 1/4.
  • a cross-sectional shape of the convex portion is rectangular.
  • the material of the passivation layer is soluble polytetrafluoroethylene.
  • An embodiment of the present application provides another TFT array substrate, which includes:
  • the color filter layer is disposed on the TFT array layer and includes a plurality of color resist units.
  • the plurality of color resist units are respectively filled with a red photoresist, a green photoresist, and a blue photoresist, and correspondingly form red.
  • Sub-pixels, green sub-pixels and blue sub-pixels, the thickness of the area on both sides of the blue sub-pixel is greater than the thickness of the middle area of the blue sub-pixel;
  • a passivation layer disposed on the color filter layer comprising a passivation layer body covering the color filter layer and a convex portion protruding on the passivation layer body;
  • a pixel electrode layer disposed on the passivation layer
  • the convex portions are correspondingly disposed above the regions on both sides of the blue sub-pixel.
  • the thickness of the convex portion is 0.3 ⁇ m to 0.5 ⁇ m.
  • the width of the convex portion is 1/5 to 1/4 of the width of the blue sub-pixel.
  • a cross-sectional shape of the convex portion is rectangular.
  • the material of the passivation layer is soluble polytetrafluoroethylene.
  • the present application also relates to a method for manufacturing a TFT array substrate, which includes:
  • S1 providing a base substrate, and forming a TFT array layer on the base substrate;
  • S2 forming a plurality of color resist units on the TFT array layer to obtain a color filter layer, the plurality of color resist units are respectively filled with a red photoresist, a green photoresist, and a blue photoresist, correspondingly forming a red color Sub-pixels, green sub-pixels and blue sub-pixels, the thickness of the area on both sides of the blue sub-pixel is greater than the thickness of the middle area of the blue sub-pixel;
  • the passivation layer includes a passivation layer body covering the color filter layer and the convex portion provided on the passivation layer body;
  • the half-tone mask includes a first light-transmitting portion and a second light-transmitting portion, and the light transmittance of the first light-transmitting portion is greater than that of the second light-transmitting portion.
  • the photoresist is a negative photoresist, and the step S4 includes the following steps:
  • the first light-transmitting portion is disposed above the two areas of the photoresist corresponding to the blue sub-pixel, and the second light-transmitting portion is disposed above the photoresist corresponding to the photoresist. Above other areas outside the areas on both sides of the blue sub-pixel;
  • the passivation layer includes a passivation layer body covering the color filter layer and corresponding to the passivation layer. Convex portions of the areas on both sides of the blue sub-pixel.
  • the thickness of the convex portion is 0.3 ⁇ m to 0.5 ⁇ m.
  • the width of the convex portion is 1/5 to 1/4 of the width of the blue sub-pixel.
  • a cross-sectional shape of the convex portion is rectangular.
  • a material of the passivation layer is soluble polytetrafluoroethylene.
  • the TFT array layer is formed by a photolithography process.
  • the TFT array substrate and the manufacturing method thereof of the present application increase the blue sub-pixels by forming convex portions of the passivation layer on both sides of the blue sub-pixels of the color filter layer.
  • the photoresist on both sides makes the thickness of the passivation layer uniform, thereby reducing the chromaticity difference.
  • the convex portion can polymerize the light scattered by the blue photoresist and reduce the loss of light transmittance.
  • the blue sub-pixels of the TFT array substrate are concave, resulting in a large difference in chromaticity between the center position and the edge position of the blue sub-pixels, which affects the technical problem of product color.
  • FIG. 1 is a schematic structural diagram of an embodiment of a TFT array substrate of the present application.
  • FIG. 2 is a flowchart of an embodiment of a manufacturing method of a TFT array substrate of the present application
  • step S1 is a schematic diagram of step S1 in an embodiment of a method for manufacturing a TFT array substrate of the present application
  • step S2 is a schematic diagram of step S2 of an embodiment of a method for manufacturing a TFT array substrate of the present application
  • step S3 is a schematic diagram of step S3 of an embodiment of a method for manufacturing a TFT array substrate of the present application
  • step S4 is a schematic diagram of step S4 in an embodiment of a method for manufacturing a TFT array substrate of the present application
  • FIG. 7 is a schematic structural diagram of a mask plate corresponding to a passivation layer in an embodiment of a method for manufacturing a TFT array substrate of the present application;
  • FIG. 8 is a schematic diagram of step S5 in an embodiment of a method for manufacturing a TFT array substrate of the present application.
  • FIG. 1 is a schematic structural diagram of an embodiment of a TFT array substrate of the present application.
  • the TFT array substrate of the embodiment of the present application includes a TFT array layer 11, a color filter layer 12, a passivation layer 13, and a pixel electrode layer 14.
  • the color filter layer 12 is disposed on the TFT array layer 11 and includes a plurality of color resistance units.
  • the plurality of color resist units are respectively filled with a red photoresist, a green photoresist, and a blue photoresist, and correspondingly form a red subpixel 121, a green subpixel 122, and a blue subpixel 123.
  • the thickness of the region 12a on both sides of the blue sub-pixel 123 is greater than the thickness of the middle region of the blue sub-pixel 123.
  • the passivation layer 13 is disposed on the color filter layer 12.
  • the passivation layer 13 includes a passivation layer body 131 covering the color filter layer 12 and a convex portion 132 protruding from the passivation layer body 131.
  • the pixel electrode layer 14 is disposed on the passivation layer 13.
  • the convex portion 132 is correspondingly disposed above the region 12 a on both sides of the blue sub-pixel 123.
  • the TFT array substrate of the present application forms the convex portions 132 of the passivation layer 13 in the region 12a on both sides of the blue sub-pixel 123 of the color filter layer 12, thereby increasing the photoresistance of the region 12a on both sides of the blue sub-pixel 123,
  • the overall thickness of the passivation layer 13 is uniformized, thereby reducing the chromaticity difference.
  • the convex portion 132 can polymerize the light scattered by the blue photoresist to reduce the loss of light transmittance.
  • the order of filling the red photoresist, the green photoresist, and the blue photoresist in the color filter layer 12 is not limited.
  • the thickness of the convex portion 132 is 0.3 ⁇ m to 0.5 ⁇ m.
  • the main function of the convex portion 132 is to increase the photoresistance of the regions 12a on both sides of the blue sub-pixel 123 and aggregate the light scattered by the blue sub-pixel 123 to reduce the loss of light transmittance.
  • the thickness of the convex portion 132 is less than 0.3 ⁇ m, the added light resistance of the convex portion 132 is insufficient, and there will still be chromaticity differences between the two regions and the middle area of the blue sub-pixel; when the thickness of the convex portion 132 is greater than 0.5 ⁇ m The increased color resistance of the convex portion 132 to the blue sub-pixel 123 is too large, which also results in chromaticity differences between the two regions and the middle area of the blue sub-pixel; therefore, when the thickness of the convex portion 132 is 0.3 ⁇ m to 0.5 ⁇ m, Increasing the photoresistance of the convex portion 132 on the regions 12a on both sides of the blue sub-pixel 123 can just make up for the difference in chromaticity between the regions 12a on the two sides of the blue sub-pixel 123 and the middle region, thereby achieving the purpose of uniformity of chromaticity.
  • the thickness of the two sides of the blue sub-pixel may be different. Therefore, the optimal solution is that the thickness of the opposite convex portion 132 should also be relatively different.
  • the thickness of the convex portion 132 The thickness adopts a uniform processing scheme, that is, the thickness of the total convex portion is taken as the convex portion corresponding to the highest thickness in the two convex regions of the two lateral regions of the blue sub-pixel.
  • the convex section 132 has a rectangular cross-sectional shape.
  • the width of the convex portion 132 is 1/5 to 1/4 of the width of the blue sub-pixel 123. Since the widths of the regions 12a on both sides of the blue sub-pixel have a large chromaticity difference, the width is 1/5 to 1/4 of the width of the blue sub-pixel 123, and other regions can be ignored. Therefore, the color resistance of the areas on both sides of the blue sub-pixel is increased for this range, so the width of the convex portion 132 is set to 1/5 to 1/4 of the width of the blue sub-pixel 123.
  • the material of the passivation layer 13 is soluble polytetrafluoroethylene.
  • the present application also relates to a method for manufacturing a TFT array substrate.
  • the steps of the method include:
  • S1 providing a base substrate, and forming a TFT array layer on the base substrate;
  • the plurality of color resist units are respectively filled with a red photoresist, a green photoresist, and a blue photoresist, and correspondingly form a red subpixel, a green subpixel, and a blue subpixel, and a thickness of a region on both sides of the blue subpixel is greater than The thickness of the middle area of the blue sub-pixel;
  • the passivation layer includes a passivation layer body covering the color filter layer and the convex portion provided on the passivation layer body;
  • a TFT array layer 11 is formed on a base substrate (not shown) by a series of processes such as film formation, yellow light, and etching.
  • step S2 referring to FIG. 4, a plurality of color resist units are sequentially formed on the TFT array layer 11 to obtain a color filter layer 12.
  • the plurality of color resist units are respectively filled with red photoresist, green photoresist, and blue.
  • the photoresist corresponds to the red sub-pixel 121, the green sub-pixel 122, and the blue sub-pixel 123.
  • the thickness of the region 12a on both sides of the blue sub-pixel 123 is greater than the thickness of the middle region of the blue sub-pixel 123.
  • a color filter layer 12 is formed on the TFT array layer 11 through a photolithography process.
  • the order of filling the red photoresist, the green photoresist, and the blue photoresist in the color filter layer 12 is not limited.
  • a photoresist is coated on the color filter layer 12 to form a passivation layer 13.
  • the photoresist can be a negative photoresist or a positive photoresist.
  • a negative photoresist is taken as an example for description.
  • step S4 referring to FIG. 6, the photoresist is patterned through a half-tone mask to obtain passivation layers 13 having different thickness portions.
  • a convex portion 132 is formed at a position of the passivation layer 13 corresponding to the region 12a on both sides of the blue sub-pixel 123 to increase the color resistance of the region 12a on both sides of the blue sub-pixel 123; The heights of the regions on both sides of the blue sub-pixel 123, so that the thickness of the passivation layer 13 corresponding to the entire blue sub-pixel 123 is uniformized, thereby achieving the effect of equalizing chromaticity.
  • the passivation layer 13 includes a passivation layer body 131 covering the color filter layer 12 and a convex portion 132 provided on the passivation layer body 131, wherein there is a height difference between the passivation layer body 131 and the convex portion 132, that is, The height of the convex portion 132 is higher than the height of the passivation layer body 131.
  • the thickness of the convex portion 132 is 0.3 ⁇ m to 0.5 ⁇ m.
  • the width of the convex portion 132 is 1/5 to 1/4 of the width of the blue sub-pixel 123.
  • the convex section 132 has a rectangular cross-sectional shape.
  • the half-tone mask plate 20 includes a first light transmitting portion 21 and a second light transmitting portion 22.
  • the light transmittance of the first light transmitting portion 21 is greater than the light transmittance of the second light transmitting portion 22.
  • the first light-transmitting portion 21 is totally transparent, and the light transmittance of the second light-transmitting portion 22 is greater than 0.
  • Step S4 includes the following steps:
  • Step S41 The first light-transmitting portion 21 is disposed above the region 12a on both sides of the photoresist corresponding to the blue sub-pixel 123, and the second light-transmitting portion 22 is disposed on the photoresist corresponding to the blue sub-pixel 123 Above the other regions outside the region 12a on both sides;
  • Step S42 the photoresist is exposed and developed through the half-tone mask 20 to obtain a passivation layer 13.
  • the passivation layer 13 includes a passivation layer body 131 covering the color filter layer 12 and convex portions 132 corresponding to the regions 12 a on both sides of the blue sub-pixel 123.
  • the halftone mask 20 is used to pattern the photoresist to obtain the convex portions 132 of the passivation layer 132 corresponding to the regions 12 a on both sides of the blue sub-pixel 123.
  • the photoresistance of the regions 12a on both sides of the blue sub-pixel 123 is increased, so that the thickness of the passivation layer 13 is uniformized, thereby reducing the chromaticity difference. Pixels) scattered light polymerization, reduce the loss of light transmittance, and improve the color performance of the product.
  • step S5 referring to FIG. 8, a pixel electrode layer 14 is formed on the passivation layer 13.
  • the TFT array substrate has been manufactured.
  • the present application also provides a COA type liquid crystal display panel having the TFT array substrate of the above embodiment.
  • the COA liquid crystal display panel includes an upper substrate, a TFT array substrate, and a liquid crystal layer disposed between the upper substrate and the TFT array substrate.
  • COA Color The filter on array technology is a technology in which a color filter layer of a color filter substrate is prepared on a TFT array substrate, that is, a color filter layer and a TFT array layer are disposed on the same side.
  • the TFT array substrate and the manufacturing method thereof of the present application increase the blue sub-pixels by forming convex portions of the passivation layer on both sides of the blue sub-pixels of the color filter layer.
  • the photoresist on both sides makes the thickness of the passivation layer uniform, thereby reducing the chromaticity difference.
  • the convex portion can polymerize the light scattered by the blue photoresist, reduce the loss of light transmittance, and improve the product's The quality of color performance; it solves the technical problem that the blue sub-pixels of the existing TFT array substrate are concave, causing the chromaticity difference between the center position and the edge position of the blue sub-pixels to be too large, which affects the product color.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)

Abstract

一种TFT阵列基板及其制作方法，TFT阵列基板包括TFT阵列层(11)、彩色滤光层(12)和钝化层(13)，彩色滤光层(12)包括蓝色子像素(123)，钝化层(13)包括钝化层本体(131)和凸设在钝化层本体(131)上的凸部(132)，通过在彩色滤光层(12)的蓝色子像素(123)的两侧区域形成钝化层(13)的凸部(132)，增加了蓝色子像素(123)两侧区域的光阻，使得钝化层(13)厚度均匀化，进而减少色度差异。

Description

TFT阵列基板及其制作方法 技术领域
本申请涉及一种显示技术领域，特别涉及一种TFT阵列基板及其制作方法。
 背景技术
液晶显示装置（Liquid  Crystal  Display，LCD）具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。比如液晶电视、移动电话、PDA、计算机屏幕和笔记本电脑屏幕等。
通常薄膜晶体管液晶显示器包括彩色滤光片和薄膜晶体管阵列基板（TFT基板）以及液晶层。其中，彩色滤光片提供红/绿/蓝色彩，目前采用光刻胶进行制作。
因为光刻胶的流平性问题，导致实际制作出的子像素的图形呈凹形（bowl shape），凹陷的幅度超过0.5微米，导致子像素中心位置和边缘位置色度差异过大，大于0.004，规格为±0.002，导致产品色彩不佳，其中以蓝色子像素最为明显。
 技术问题
本申请实施例提供一种TFT阵列基板及其制作方法；以解决现有的TFT阵列基板的蓝色子像素呈凹形，导致蓝色子像素中心位置和边缘位置色度差异过大，从而影响产品色彩的技术问题。
 技术解决方案
本申请实施例提供一种TFT阵列基板，其包括：
TFT阵列层；
彩色滤光层，设置在所述TFT阵列层上，包括多个色阻单元，所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶，且对应形成红色子像素、绿色子像素和蓝色子像素，蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度；
钝化层，设置在所述彩色滤光层上，包括覆盖所述彩色滤光层的钝化层本体和凸设在所述钝化层本体上的凸部；以及
像素电极层，设置在所述钝化层上；
其中所述凸部对应设置在所述蓝色子像素两侧区域的上方，所述凸部的厚度为0.3微米~0.5微米，所述凸部的宽度为所述蓝色子像素宽度的1/5~1/4。
在本申请的TFT阵列基板中，所述凸部的截面形状为矩形。
在本申请的TFT阵列基板中，所述钝化层的材料为可溶性聚四氟乙烯。
本申请实施例提供另一种TFT阵列基板，其包括：
TFT阵列层；
彩色滤光层，设置在所述TFT阵列层上，包括多个色阻单元，所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶，且对应形成红色子像素、绿色子像素和蓝色子像素，蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度；
钝化层，设置在所述彩色滤光层上，包括覆盖所述彩色滤光层的钝化层本体和凸设在所述钝化层本体上的凸部；以及
像素电极层，设置在所述钝化层上；
其中所述凸部对应设置在所述蓝色子像素两侧区域的上方。
在本申请的另一TFT阵列基板中，所述凸部的厚度为0.3微米~0.5微米。
在本申请的另一TFT阵列基板中，所述凸部的宽度为蓝色子像素宽度的1/5~1/4。
在本申请的另一TFT阵列基板中，所述凸部的截面形状为矩形。
在本申请的另一TFT阵列基板中，所述钝化层的材料为可溶性聚四氟乙烯。
本申请还涉及一种TFT阵列基板的制作方法，其包括：
S1：提供一衬底基板，在所述衬底基板上形成TFT阵列层；
S2：在所述TFT阵列层上形成多个色阻单元，得到彩色滤光层，所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶，对应形成红色子像素、绿色子像素和蓝色子像素，蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度；
S3：在所述彩色滤光层上涂布光刻胶；
S4：通过半色调掩模板对所述光刻胶进行图案化处理，得到钝化层，以使所述钝化层对应于所述蓝色子像素两侧区域的位置形成一凸部，
所述钝化层包括覆盖所述彩色滤光层的钝化层本体和设置在所述钝化层本体上的所述凸部；
S5：在所述钝化层上形成像素电极层。
在本申请的TFT阵列基板的制作方法中，所述半色调掩模板包括第一透光部和第二透光部，所述第一透光部的透光率大于所述第二透光部的透光率，所述光刻胶为负性光刻胶，所述步骤S4包括以下步骤：
S41：将所述第一透光部设置在所述光刻胶对应于所述蓝色子像素的两侧区域的上方，将所述第二透光部设置在所述光刻胶对应于除所述蓝色子像素两侧区域外的其他区域的上方；
S42：透过所述半色调掩模板对所述光刻胶进行曝光和显影处理，得到钝化层，所述钝化层包括覆盖所述彩色滤光层的钝化层本体和对应于所述蓝色子像素两侧区域的凸部。
在本申请的TFT阵列基板的制作方法中，所述凸部的厚度为0.3微米~0.5微米。
在本申请的TFT阵列基板的制作方法中，所述凸部的宽度为蓝色子像素宽度的1/5~1/4。
在本申请的TFT阵列基板的制作方法中，所述凸部的截面形状为矩形。
在本申请的TFT阵列基板的制作方法中，所述钝化层的材料为可溶性聚四氟乙烯。
在本申请的TFT阵列基板的制作方法中，所述TFT阵列层通过光刻工艺形成。
 有益效果
相较于现有技术的TFT阵列基板，本申请的TFT阵列基板及其制作方法通过在彩色滤光层的蓝色子像素的两侧区域形成钝化层的凸部，增加了蓝色子像素两侧区域的光阻，使得钝化层厚度均匀化，进而减少色度差异；另外，凸部可将蓝色光刻胶散射的光聚合，减少光透过率的损失；解决了现有的TFT阵列基板的蓝色子像素呈凹形，导致蓝色子像素中心位置和边缘位置色度差异过大，从而影响产品色彩的技术问题。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本申请的TFT阵列基板的实施例的结构示意图；
图2为本申请的TFT阵列基板的制作方法的实施例的流程图；
图3为本申请的TFT阵列基板的制作方法的实施例的步骤S1的示意图；
图4为本申请的TFT阵列基板的制作方法的实施例的步骤S2的示意图；
图5为本申请的TFT阵列基板的制作方法的实施例的步骤S3的示意图；
图6为本申请的TFT阵列基板的制作方法的实施例的步骤S4的示意图；
图7为本申请的TFT阵列基板的制作方法的实施例中钝化层对应的掩膜板的结构示意图；
图8为本申请的TFT阵列基板的制作方法的实施例的步骤S5的示意图。
 本发明的实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图1，图1为本申请的TFT阵列基板的实施例的结构示意图。
本申请的实施例的TFT阵列基板包括TFT阵列层11、彩色滤光层12、钝化层13和像素电极层14。
具体的，彩色滤光层12设置在TFT阵列层11上，其包括多个色阻单元。多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶，且对应形成红色子像素121、绿色子像素122和蓝色子像素123。蓝色子像素123两侧区域12a的厚度大于蓝色子像素123中间区域的厚度。钝化层13设置在彩色滤光层12上。钝化层13包括覆盖彩色滤光层12的钝化层本体131和凸设在钝化层本体131上的凸部132。像素电极层14设置在钝化层13上。
其中，凸部132对应设置在蓝色子像素123两侧区域12a的上方。
本申请的TFT阵列基板通过在彩色滤光层12的蓝色子像素123的两侧区域12a形成钝化层13的凸部132，增加了蓝色子像素123两侧区域12a的光阻，使得钝化层13整体的厚度均匀化，进而减少色度差异；另外，凸部132可将蓝色光刻胶散射的光聚合，减少光透过率的损失。
另外，彩色滤光层12中对于填充红色光刻胶、绿色光刻胶和蓝色光刻胶的顺序不做限定。
在本申请的TFT阵列基板的实施例中，凸部132的厚度为0.3微米~0.5微米。凸部132的主要作用在于增加蓝色子像素123两侧区域12a的光阻并将蓝色子像素123散射的光聚合，以减少光透过率的损失。当凸部132的厚度小于0.3微米时，凸部132所增加的光阻不足，仍然会出现蓝色子像素的两侧区域和中间区域存在色度差异；当凸部132的厚度大于0.5微米时，凸部132对蓝色子像素123增加的色阻过大，同样导致蓝色子像素的两侧区域和中间区域存在色度差异；因此当凸部132的厚度为0.3微米~0.5微米时，凸部132增加蓝色子像素123两侧区域12a的光阻正好可以弥补蓝色子像素123的两侧区域12a和中间区域的色度差异，从而达到色度均匀化的目的。
而在实际制作中，蓝色子像素的两侧区域的厚度可能会不同，因此，最优的方案是相对的凸部132的厚度也应该相对不同，但是由于现在工艺的限制，凸部132的厚度采用一致处理方案，即取相对于蓝色子像素的两侧区域的两个凸部中，满足两侧区域中最高厚度所对应的凸部，作为整体凸部厚度的厚度值。
凸部132的截面形状为矩形。
另外，凸部132的宽度为蓝色子像素123宽度的1/5~1/4。由于蓝色子像素的两侧区域12a存在色度差异较大部分的宽度为蓝色子像素123宽度的1/5~1/4，其他区域可以忽略不计。因此针对该范围进行增加蓝色子像素两侧区域的色阻，故将凸部132的宽度设定为蓝色子像素123宽度的1/5~1/4。
在本申请的TFT阵列基板的实施例中，钝化层13的材料为可溶性聚四氟乙烯。
请参照图2-图8，本申请还涉及一种TFT阵列基板的制作方法，所述制作方法的步骤包括：
S1：提供一衬底基板，在所述衬底基板上形成TFT阵列层；
S2：在所述TFT阵列层上形成多个色阻单元，得到彩色滤光层，
所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶，对应形成红色子像素、绿色子像素和蓝色子像素，蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度；
S3：在所述彩色滤光层上涂布光刻胶；
S4：通过半色调掩模板对所述光刻胶进行图案化处理，得到钝化层，以使所述钝化层对应于所述蓝色子像素两侧区域的位置形成一凸部，
所述钝化层包括覆盖所述彩色滤光层的钝化层本体和设置在所述钝化层本体上的所述凸部；
S5：在所述钝化层上形成像素电极层。
在步骤S1中，请参照图3，通过成膜、黄光、蚀刻等一系列制程一次在衬底基板（图未示出）上形成TFT阵列层11。
在步骤S2中，请参照图4，在TFT阵列层11上依次形成多个色阻单元，得到彩色滤光层12，多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶，对应形成红色子像素121、绿色子像素122和蓝色子像素123，蓝色子像素123两侧区域12a的厚度大于蓝色子像素123中间区域的厚度。
具体的，通过光刻制程，在TFT阵列层11上形成彩色滤光层12。彩色滤光层12中对于填充红色光刻胶、绿色光刻胶和蓝色光刻胶的顺序不做限定。
在步骤S3中，请参照图5，在彩色滤光层12上涂布光刻胶，用于形成钝化层13，其中光刻胶为负性光刻胶或正性光刻胶均可，在本申请中的实施例中以负性光刻胶为例进行说明。
在步骤S4中，请参照图6，通过半色调掩模板对光刻胶图案化处理，得到具有不同厚度部分的钝化层13。其中钝化层13对应于蓝色子像素123两侧区域12a的位置形成一凸部132，以增加蓝色子像素123两侧区域12a的色阻；钝化层13的其他区域的高度小于对应蓝色子像素123两侧区域的高度，以使钝化层13对应于整个蓝色子像素123的厚度均匀化，从而达到均化色度的效果。
因此，钝化层13包括覆盖彩色滤光层12的钝化层本体131和设置在钝化层本体131上的凸部132，其中钝化层本体131和凸部132之间存在高度差，即凸部132的高度高于钝化层本体131的高度。
其中，凸部132的厚度为0.3微米~0.5微米。凸部132的宽度为蓝色子像素123宽度的1/5~1/4。凸部132的截面形状为矩形。
具体的，请一并参照图7，半色调掩模板20包括第一透光部21和第二透光部22。第一透光部21的透光率大于第二透光部22的透光率。在本实施例中，第一透光部21为全透光，第二透光部22的透光率大于0。步骤S4包括以下步骤：
步骤S41：将第一透光部21设置在光刻胶对应于蓝色子像素123的两侧区域12a的上方，将第二透光部22设置在光刻胶对应于除蓝色子像素123两侧区域12a外的其他区域的上方；
步骤S42：透过半色调掩模板20对光刻胶进行曝光和显影处理，得到钝化层13。钝化层13包括覆盖彩色滤光层12的钝化层本体131和对应于蓝色子像素123两侧区域12a的凸部132。
通过半色调掩模板20对光刻胶进行图案化处理，得到对应于蓝色子像素123两侧区域12a的钝化层132的凸部132。一方面增加了蓝色子像素123两侧区域12a的光阻，使得钝化层13厚度均匀化，进而减少色度差异；另一方面，凸部132可将蓝色光刻胶（蓝色子像素）散射的光聚合，减少光透过率的损失，提高了产品的色彩表现。
在步骤S5中，请参照图8，在钝化层13上形成像素电极层14。
至此，TFT阵列基板已制作完毕。
本申请还提供一种具有上述实施例的TFT阵列基板的COA型液晶显示面板。所述COA液晶显示面板包括上基板、TFT阵列基板和设置在上基板和TFT阵列基板之间的液晶层。
其中COA（Color  filter  On  Array）技术是一种将彩色滤光片基板的色阻层制备于TFT阵列基板上的技术，即将彩色滤光层与TFT阵列层设置在同侧。
相较于现有技术的TFT阵列基板，本申请的TFT阵列基板及其制作方法通过在彩色滤光层的蓝色子像素的两侧区域形成钝化层的凸部，增加了蓝色子像素两侧区域的光阻，使得钝化层厚度均匀化，进而减少色度差异；另外，凸部可将蓝色光刻胶散射的光聚合，减少光透过率的损失，且提高了产品的色彩表现质量；解决了现有的TFT阵列基板的蓝色子像素呈凹形，导致蓝色子像素中心位置和边缘位置色度差异过大，从而影响产品色彩的技术问题。
虽然本申请已以实施例揭露如上，实施例前的序号，如“第一”、“第二”等仅为描述方便而使用，对本申请各实施例的顺序不造成限制。并且，上述实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种TFT阵列基板，其包括：
    TFT阵列层；
    彩色滤光层，设置在所述TFT阵列层上，包括多个色阻单元，所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶，且对应形成红色子像素、绿色子像素和蓝色子像素，蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度；
    钝化层，设置在所述彩色滤光层上，包括覆盖所述彩色滤光层的钝化层本体和凸设在所述钝化层本体上的凸部；以及
    像素电极层，设置在所述钝化层上；
    其中所述凸部对应设置在所述蓝色子像素两侧区域的上方，所述凸部的厚度为0.3微米~0.5微米，所述凸部的宽度为所述蓝色子像素宽度的1/5~1/4。
  2. 根据权利要求1所述的TFT阵列基板，其中，所述凸部的截面形状为矩形。
  3. 根据权利要求1所述的TFT阵列基板，其中，所述钝化层的材料为可溶性聚四氟乙烯。
  4. 一种TFT阵列基板，其包括：
    TFT阵列层；
    彩色滤光层，设置在所述TFT阵列层上，包括多个色阻单元，所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶，且对应形成红色子像素、绿色子像素和蓝色子像素，蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度；
    钝化层，设置在所述彩色滤光层上，包括覆盖所述彩色滤光层的钝化层本体和凸设在所述钝化层本体上的凸部；以及
    像素电极层，设置在所述钝化层上；
    其中所述凸部对应设置在所述蓝色子像素两侧区域的上方。
  5. 根据权利要求4所述的TFT阵列基板，其中，所述凸部的厚度为0.3微米~0.5微米。
  6. 根据权利要求4所述的TFT阵列基板，其中，所述凸部的宽度为蓝色子像素宽度的1/5~1/4。
  7. 根据权利要求4所述的TFT阵列基板，其中，所述凸部的截面形状为矩形。
  8. 根据权利要求4所述的TFT阵列基板，其中，所述钝化层的材料为可溶性聚四氟乙烯。
  9. 一种TFT阵列基板的制作方法，其包括：
    S1：提供一衬底基板，在所述衬底基板上形成TFT阵列层；
    S2：在所述TFT阵列层上形成多个色阻单元，得到彩色滤光层；所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶，对应形成红色子像素、绿色子像素和蓝色子像素，蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度；
    S3：在所述彩色滤光层上涂布光刻胶；
    S4：通过半色调掩模板对所述光刻胶进行图案化处理，得到钝化层，以使所述钝化层对应于所述蓝色子像素两侧区域的位置形成一凸部；所述钝化层包括覆盖所述彩色滤光层的钝化层本体和设置在所述钝化层本体上的所述凸部；
    S5：在所述钝化层上形成像素电极层。
  10. 根据权利要求9所述的TFT阵列基板的制作方法，其中，所述半色调掩模板包括第一透光部和第二透光部，所述第一透光部的透光率大于所述第二透光部的透光率，所述光刻胶为负性光刻胶，所述步骤S4包括以下步骤：
    S41：将所述第一透光部设置在所述光刻胶对应于所述蓝色子像素的两侧区域的上方，将所述第二透光部设置在所述光刻胶对应于除所述蓝色子像素两侧区域外的其他区域的上方；
    S42：透过所述半色调掩模板对所述光刻胶进行曝光和显影处理，得到钝化层，所述钝化层包括覆盖所述彩色滤光层的钝化层本体和对应于所述蓝色子像素两侧区域的凸部。
  11. 根据权利要求9所述的TFT阵列基板的制作方法，其中，所述凸部的厚度为0.3微米~0.5微米。
  12. 根据权利要求9所述的TFT阵列基板的制作方法，其中，所述凸部的宽度为蓝色子像素宽度的1/5~1/4。
  13. 根据权利要求9所述的TFT阵列基板的制作方法，其中，所述凸部的截面形状为矩形。
  14. 根据权利要求9所述的TFT阵列基板的制作方法，其中，所述钝化层的材料为可溶性聚四氟乙烯。
  15. 根据权利要求9所述的TFT阵列基板的制作方法，其中，所述TFT阵列层通过光刻工艺形成。
PCT/CN2018/105545 2018-08-20 2018-09-13 Tft阵列基板及其制作方法 Ceased WO2020037741A1 (zh)

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