WO2020029357A1 - Matériau de base pour support de del, support de del, source de lumière à del et son procédé de fabrication - Google Patents

Matériau de base pour support de del, support de del, source de lumière à del et son procédé de fabrication Download PDF

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Publication number
WO2020029357A1
WO2020029357A1 PCT/CN2018/104144 CN2018104144W WO2020029357A1 WO 2020029357 A1 WO2020029357 A1 WO 2020029357A1 CN 2018104144 W CN2018104144 W CN 2018104144W WO 2020029357 A1 WO2020029357 A1 WO 2020029357A1
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WO
WIPO (PCT)
Prior art keywords
layer
substrate
led
bonding
coatings
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Application number
PCT/CN2018/104144
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English (en)
Chinese (zh)
Inventor
刘云
李俊东
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深圳市斯迈得半导体有限公司
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Publication of WO2020029357A1 publication Critical patent/WO2020029357A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members

Definitions

  • the present application relates to the technical field of LED light sources, and in particular, to a substrate having improved stability and reliability, and an LED bracket and a novel LED light source manufactured thereby, and a manufacturing method thereof.
  • LED Since its introduction, LED has been widely valued and developed rapidly, which is inseparable from its own advantages. These advantages are summarized as: high brightness, low operating voltage, small power consumption, miniaturization, long life, impact resistance and stable performance.
  • TOP LEDs ie, top-surface or flat-emitting LEDs
  • problems such as product degradation and product failure are often encountered. Pollution reasons, such as halogenation, oxidation, etc.), these problems bring certain losses to customers and manufacturers.
  • the functional area of the LED product will be blackened, which will greatly reduce the reflection of light, the luminous flux will gradually decrease, and the color temperature will appear to drift and the product performance will be deteriorated, which will greatly reduce the reliability and service life of the LED . In severe cases, it directly leads to LED failure, that is, dead lights.
  • brackets of TOP LEDs are generally plated with silver on the substrate.
  • the silver plating layer can not only improve the conductivity and oxidation resistance, but also mainly play a role
  • the light reflected by the LED is used to significantly improve the light efficiency and the luminous flux of the LED.
  • this application proposes a highly stable LED bracket, an LED device, a manufacturing method thereof,
  • the present invention aims to solve the above technical defects and other technical problems, and can also provide more additional technical effects.
  • the substrate body may be selected from metal materials such as aluminum, copper, iron, or silver (not limited to the above-mentioned metal materials), and may be subjected to, for example, vacuum sputtering technology, ion plating technology, electroplating, and physical deposition. Or chemical plating technology, which deposits (such as coating or plating) one or more metal layers, compounds and other material layers on the surface of the substrate to form a welding interface.
  • metal materials such as aluminum, copper, iron, or silver
  • chemical plating technology which deposits (such as coating or plating) one or more metal layers, compounds and other material layers on the surface of the substrate to form a welding interface.
  • the base material, the filling material and the LED bracket can be fixedly connected.
  • the LED bracket can be embedded or sol-bonded.
  • the chip of the bracket can be mounted with a chip, and the chip can be soldered on There are bonding wires, and the chip and the bonding wires can be encapsulated with a sealing glue or a mixture of the sealing glue and a phosphor to form a specific LED package lamp bead.
  • a substrate (1) for an LED bracket including a metal substrate
  • the substrate includes: a substrate for a metal substrate arranged on the metal substrate; One or more coatings on one side of the LED chip; and / or one or more second metal layers deposited on the other side of the metal substrate opposite to the side used to bond the LED chip
  • an anti-oxidation treatment is performed on the other side of the metal substrate (7) opposite to the side used for bonding the LED chip.
  • the one or more coating layers include one or more first metal layers and one or more compound layers.
  • the first metal layer is a coating layer formed of silver or a silver alloy, aluminum or an aluminum alloy, iron or an iron alloy, or copper or a copper alloy; and the compound layer is formed by vacuum sputtering , Ion plating, electroplating, physical deposition or electroless deposition of a compound coating selected from one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: An aluminum oxide layer, a titanium dioxide layer, a pure silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: An aluminum oxide layer, a titanium dioxide layer, a pure silver layer, a titanium dioxide layer, a silicon dioxide layer, and an outermost titanium dioxide layer.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: A silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer and a silicon-containing compound layer directly adjacent to the copper substrate, such as A silicone oil layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer, a titanium dioxide layer, and a silicon dioxide directly adjacent to the copper substrate. Layer, and the outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer directly adjacent to the copper substrate, and an outermost trioxide. Two aluminum layers; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer directly adjacent to the copper substrate, and an outermost dioxide Silicon layer.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate that is used to bond the LED chip: nickel directly adjacent to the copper substrate Layer, silver layer, alumina layer, and outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a nickel layer, a silver layer, and a silicone oil layer (including Silicon compounds); or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a nickel layer, a silver layer, a titanium dioxide layer, A silicon oxide layer, and an outermost titanium dioxide layer.
  • the one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate, a pure silver layer, and an outermost side Alumina layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate, a pure silver layer, and an outermost side Of silicon dioxide layer.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: copper directly adjacent to the iron substrate Layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a pure silver layer, and a silicone oil layer (directly adjacent to the iron substrate). Silicon-containing compounds); or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate, a pure silver layer, a titanium dioxide layer, A silicon dioxide layer, and an outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a copper layer directly adjacent to the iron substrate, a pure silver layer, and an outermost layer. Al2O3 layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a copper layer directly adjacent to the iron substrate, a pure silver layer, and an outermost layer. Silicon dioxide layer.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: copper directly adjacent to the iron substrate Layer, nickel layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, A silicone oil layer (containing silicon compounds); or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, A titanium dioxide layer, a silicon dioxide layer, and an outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, and The outermost alumina layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, and The outermost silicon dioxide layer.
  • the second metal layer is sequentially arranged from the inside to the outside starting from the other side of the metal substrate opposite to the side used for bonding the LED chip: a copper layer and a member selected from A metal layer of one or more of silver, tin, nickel, and copper; or, an anti-oxidation treatment is performed on the other side of the metal substrate (7) opposite to the side used to bond the LED chip.
  • the second metal layer is sequentially arranged from the inside to the outside starting from the other side of the metal substrate opposite to the side used for bonding the LED chip: a copper layer and a member selected from A metal layer of one or more of silver, tin, and nickel; or, an anti-oxidation treatment is performed on the other side of the metal substrate (7) opposite to the side used to bond the LED chip.
  • the second metal layer is formed of one or more metals of silver, tin, and nickel; or, the side of the metal substrate (7) and the side for bonding the LED chip On the other side, do an anti-oxidation treatment.
  • the second metal layer is formed of one or more metals of silver, tin, nickel, and copper; or, in the metal substrate (7) and for bonding the LED chip The opposite side is anti-oxidized.
  • the present application also provides an LED bracket including the above-mentioned substrate, and an LED bracket body with a bowl and a cup-shaped LED bracket body formed with, for example, injection molding together with the substrate.
  • Glue material (2) wherein the reflective surface of the glue material (2) forms a bowl-cup structure with a divergence angle of 90-180 ° together with the substrate, and the glue material (2) is a thermoplastic material or Thermoset material.
  • the present application also provides a high-stability LED light source, including the LED bracket described above, an LED chip (4; 8) bound to the bottom of the cup, and an encapsulant (3) filled in the cup. ).
  • the present application also discloses a method for surface-treating an LED support substrate or a semi-finished product of an LED light source.
  • the method includes: vacuum-sputtering on a side of a metal substrate of the substrate for bonding LED chips. , Ion plating, electroplating, physical deposition or electroless plating techniques to deposit one or more surface coatings; and / or, vacuum sputtering on the other side of the metal substrate opposite to the side used to bond the LED chip , Ion plating, electroplating, physical deposition or electroless plating technology to deposit one or more second metal layers; or, to prevent oxidation on the other side of the metal substrate (7) opposite to the side used to bond the LED chip deal with.
  • the one or more coating layers include one or more first metal layers and one or more compound layers, wherein the compound layers are formed by vacuum sputtering or ion plating. , Electroplating, physical deposition or electroless deposition of a compound coating selected from the group consisting of one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
  • the second metal layer is one or more metal coatings formed of one or more metals of silver, tin, nickel, and copper; or, on the metal substrate (7)
  • the side opposite to the side used for bonding the LED chip is anti-oxidized.
  • the method is used to form a substrate or an LED light source semi-finished surface coating structure of an LED bracket specifically designed in the present application.
  • the base material and the bracket filling material can be formed into an LED bracket by a certain process, wherein the base material and the bracket filling material provide an LED bracket body structure through mutual embedding or sol-bonding design.
  • bracket cups and positive and negative electrodes for LED chip bonding separated by insulating glue.
  • the bottom of the bottom of the LED support cup is designed to be embedded or sol-bonded, wherein the glue (2) and the substrate are embedded or sol-bonded to each other.
  • the bottom of the bowl cup of the LED bracket can be mounted with a chip
  • the bonding LED chip (4) can be soldered with the bonding wire (5)
  • the flip chip (8) can be soldered with the bottom of the cup
  • the chip (4) (8) and the bonding wire (5) may be encapsulated with a sealing glue (3).
  • the side of the metal substrate used to bond the LED chip is deposited with metallic silver and compounds by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology.
  • the above substrate may be selected from metal materials such as aluminum, copper, iron, etc., and the substrate is not limited to the above metal materials, and the compound is one of aluminum oxide, silicon dioxide, titanium dioxide, silicon-containing compound, such as silicone oil, or Multiple.
  • the lower surface of the metal substrate is deposited with a metal material such as copper or silver by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology, and the metal material deposited on the lower surface is one or more of copper and silver.
  • a metal material such as copper or silver by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology
  • the metal material deposited on the lower surface is one or more of copper and silver.
  • the deposited metal materials are not limited to the above.
  • the bracket is filled with a specific rubber material, which can be selected from materials such as PPA, PCT, EMC, SMC or BT.
  • the substrate main body can be selected from aluminum, copper, or iron materials, and metal, compounds, etc. are deposited on the surface of the substrate through vacuum sputtering technology, ion plating technology, electroplating, physical deposition, or chemical plating technology. Materials to form a welding interface.
  • the substrate's reflectivity and gloss are improved, and the front and back side soldering process of the LED bracket substrate is realized.
  • the size, structure, molding, and processing technology of LED brackets and LED device products can be diversified and flexibly customized according to the application.
  • FIGS. 1A-1D are schematic diagrams of different perspectives of an LED bracket structure according to an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a substrate for an LED bracket according to an embodiment of the present application.
  • 3A-3C are schematic diagrams of different perspectives of an LED bracket structure according to another embodiment of the present application.
  • FIGS. 4A-4C are schematic diagrams of different perspectives of an LED bracket structure according to another embodiment of the present application.
  • 5A-5C are schematic structural diagrams of LED semi-finished products after welding according to an embodiment of the present application.
  • 6A-6B are schematic diagrams of a specific coating structure of a substrate according to a preferred embodiment of the present application.
  • FIGS. 7A-7B are schematic diagrams of a specific coating structure of a substrate according to another preferred embodiment of the present application.
  • FIGS. 8A-8B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • FIGS. 9A-9B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • 10A-10B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • 11A-11B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • 12A-12B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • FIG. 13 is a schematic diagram of a specific coating structure of a substrate according to another preferred embodiment of the present application.
  • FIG. 14 is a schematic diagram of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • FIG. 15 is a schematic diagram of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • FIG. 16 is a schematic diagram of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • the following technical solutions are adopted: it includes a substrate 1, a bracket filling adhesive material 2, an encapsulation adhesive 3, a chip 4 or 8, a bonding wire 5.
  • the LED bracket adopts an embedded or sol-bonded design 6.
  • the substrate 1 and the glue 2 are formed by a certain process to form the LED bracket shown in FIGS. 1A-1D.
  • a chip 4 or 8 is mounted on the bottom of the cup of FIGS. 5A-5C, a bonding wire 5 is soldered on the front-mounted LED chip 4, and the LED chip 8 and a bracket are flipped (FIGS. 5A-5C).
  • the bottom of the cup is soldered, and an encapsulant 3 is packaged above the chip 4 or 8 and the bonding wire 5.
  • the upper surface of the metal substrate 7 shown in Figs. 6-16 is vacuum-sputtered, ion-plated, electroplated, physically deposited, or electroless-plated.
  • Metal silver and compounds are deposited, and the metal substrate 7 can be selected from metal materials such as aluminum, copper, and iron, and is not limited to the above-mentioned metal materials.
  • the compound may be, for example, one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
  • the lower surface of the metal substrate 7 as shown in FIG. 6-16 can be deposited by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology on metallic materials such as copper, silver, and the like.
  • the deposited metal material is one or more of copper and silver, and the deposited metal material is not limited to the above.
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order from the aluminum substrate: (7)
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order from the aluminum substrate: (7)
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order: and the copper substrate (7) directly adjacent pure silver layer, alumina layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7) Layers, silicon-containing compounds, such as silicone oil; or
  • one or more coatings are arranged from the side of the metal substrate (7) used for bonding the LED chip from the inside to the outside in order: and the copper substrate (7) directly adjacent pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7) Layer, alumina layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7).
  • Layer, silica are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7).
  • Layer, silica are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7).
  • Layer silica.
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order: and the copper substrate (7) a nickel layer, a pure silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer adjacent to each other; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, silicon-containing compounds, such as silicone oil; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, alumina layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, silicon dioxide.
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip in order from the inside to the outside: (7) directly adjacent copper layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Pure silver layer, and outermost aluminum oxide; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , A pure silver layer, and an outermost silicon-containing compound, such as silicone oil; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Pure silver layer and outermost silicon dioxide.
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order to be directly adjacent to the iron substrate (7).
  • one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate (7) that is used for bonding LED chips: directly adjacent to the iron substrate (7) Copper layer, nickel layer, pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order to be directly adjacent to the iron substrate (7).
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Nickel, pure silver, and outermost silicon-containing compounds, such as silicone oil; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order to be directly adjacent to the iron substrate (7).
  • the second metal layer is sequentially arranged from the inside to the outside starting from the other side of the metal substrate (7) opposite to the side used for bonding the LED chip: a copper layer and an outermost Silver layer.
  • the second metal layer is formed of one or more metals of silver, tin, and nickel.
  • the second metal layer is formed of one or more metals of silver, tin, nickel, and copper.
  • the bottom of the LED shown in FIGS. 3A-3C and 4A-4C may be an embedded or sol-bonded design, wherein the glue material 2 and the substrate 1 are embedded with each other or sol-bonded to form an integrated bracket body.
  • the specific stent filler 2 can be selected from PPA, PCT, EMC, SMC, BT and other materials.
  • the manufacturing process of the LED bracket and the LED light source / lamp beads of the present application are described as follows.
  • Substrate processing Select specific substrates through front and back vacuum sputtering technology, ion plating technology, electroplating, physical deposition or chemical plating technology to process metal, organic or inorganic related compound materials;
  • Stamping or etching Select substrates that have been processed by front and back surface processing or stamping;
  • LED bracket production Fill the corresponding structure LED bracket with thermoset or thermoplastic or pressed composite ( Figure 3A-3C);
  • LED packaging process LED semi-finished products are formed on the LED bracket ( Figure 3A-3C) by mounting chips 4, soldering and other processes ( Figure 5A-5C);
  • the encapsulating adhesive layer 3 is potted in the LED semi-finished product (FIGS. 5A-5C), and is baked and cured to form the required LED light source lamp beads.
  • the LED bracket is prepared through the above specific embodiments, and an LED light source is thus manufactured.
  • the dimensions of the high-stability LED light source of the present application can be customized.
  • the length and width are 0.5 mm to 100 mm and the thickness is 0.2 mm to 40 mm.
  • the process is realized and surface-treated according to the present application as described above.
  • Substrate stamping or etching Select substrate stamping or etching, select the stamped and etched metal substrate and vacuum-sputter, ion plating, electroplating, physical deposition or electroless plating surface treatment, the surface of the substrate is silver or the substrate is nickel , Silver is attached to the outer layer of nickel;
  • LED bracket production Fill the corresponding structure LED bracket with thermoset or thermoplastic or pressed composite ( Figure 3A-3C);
  • LED packaging process LED semi-finished products are formed on the LED bracket ( Figure 3A-3C) by mounting chips 4, soldering and other processes ( Figure 5A-5C);
  • the encapsulating adhesive layer 3 is potted in the LED semi-finished product (FIGS. 5A-5C), and is baked and cured to form the required LED light source lamp beads.
  • the LED bracket is prepared through the above specific embodiments, and an LED light source is thus manufactured.
  • the dimensions of the high-stability LED light source of the present application can be customized.
  • the length and width are 0.5 mm to 100 mm and the thickness is 0.2 mm to 40 mm.
  • the process is realized and surface-treated according to the present application as described above.
  • Substrate stamping or etching Select substrate stamping or etching, select the stamped and etched metal substrate and vacuum-sputter, ion plating, electroplating, physical deposition or electroless plating surface treatment, the surface of the substrate is silver or the substrate is nickel , Silver is attached to the outer layer of nickel;
  • LED bracket production Fill the corresponding structure LED bracket with thermoset or thermoplastic or pressed composite ( Figure 3A-3C);
  • the LED light source semi-finished product is formed on the LED bracket ( Figure 3A-3C) by mounting chips 4, soldering and other processes ( Figure 5A-5C);
  • LED light source semi-finished products Select step (1), step (2), step (3) LED light source semi-finished product vacuum sputtering technology, ion plating technology, electroplating, physical deposition or chemical plating technology. Selective surface treatment of organic or inorganic related compounds material;
  • the encapsulating adhesive layer 3 is potted in the LED semi-finished product (FIGS. 5A-5C), and is baked and cured to form the required LED light source lamp beads.
  • a substrate for an LED holder is provided, wherein an aluminum trioxide layer directly adjacent to the aluminum substrate 7 is coated on the side of the metal substrate 7 for bonding LED chips,
  • the thickness of the titanium dioxide layer, the pure silver layer, the aluminum oxide layer, and the outermost titanium dioxide layer can be between 30nm and 5000nm. Therefore, the chemical structure of the coating structure provided on the aluminum substrate in this embodiment is stable, and can prevent harmful elements (such as oxygen, sulfur, bromine, halogen elements, etc.) from the outside from reacting with the pure silver layer.
  • harmful elements such as oxygen, sulfur, bromine, halogen elements, etc.
  • the thickness of the silver layer is generally 0.5-3.0 microns.
  • the test results show that the average luminous flux attenuation of the LED device manufactured by using the above substrate of the present application is about 1% after 1000 hours of lighting and aging; while the LED device manufactured by using the conventional TOP LED support substrate material passes the 1000 hour point Bright aging luminous flux attenuation averages about 10%.

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un matériau de base (1) utilisé pour un support de DEL, un support de DEL, une source de lumière à DEL et son procédé de fabrication. Le matériau de base (1) comprend une matrice métallique (7), et une ou plusieurs couches de revêtement disposées sur un côté de la matrice métallique (7) utilisées pour lier des puces de DEL (4, 8) ; et/ou une ou plusieurs secondes couches métalliques déposées sur l'autre côté de la matrice métallique (7) opposé au côté utilisé pour lier les puces de DEL (4, 8) ; ou un traitement anti-oxydation est effectué sur l'autre côté de la matrice métallique (7) opposé au côté utilisé pour lier les puces de DEL (4, 8). La présente invention concerne également un support de DEL qui a le matériau de base (1), une source de lumière à DEL obtenue par encapsulation des puces de DEL (4, 8) dans le support de DEL, et un procédé pour effectuer un traitement de surface sur le matériau de base (1) du support de DEL ou un produit semi-fini de la source de lumière à DEL. Au moyen de la solution technique précédente, il est possible d'empêcher que le matériau du matériau de base (1) ne soit facilement vulcanisé, bromé, oxydé, etc, améliorant ainsi la réflectivité et le brillant du matériau de base (1).
PCT/CN2018/104144 2018-08-06 2018-11-02 Matériau de base pour support de del, support de del, source de lumière à del et son procédé de fabrication WO2020029357A1 (fr)

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CN111063781A (zh) * 2019-12-27 2020-04-24 深圳市杰瑞表面技术有限公司 一种通过镀膜防硫化的led灯珠及其制作方法

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JP2007180430A (ja) * 2005-12-28 2007-07-12 Toshiba Lighting & Technology Corp 発光ダイオード装置
CN106898686A (zh) * 2017-03-04 2017-06-27 深圳市斯迈得半导体有限公司 高稳定性的led支架、led光源及方法
CN107706271A (zh) * 2016-08-08 2018-02-16 深圳市斯迈得半导体有限公司 一种新型结构的led光源的制作方法
CN107706280A (zh) * 2016-08-08 2018-02-16 深圳市斯迈得半导体有限公司 一种通过真空溅射技术制造的led光源的制造方法
CN107845705A (zh) * 2016-09-18 2018-03-27 深圳市斯迈得半导体有限公司 基材通过真空溅射技术制造的新型led光源的制造方法
WO2018139770A1 (fr) * 2017-01-26 2018-08-02 엘지이노텍 주식회사 Dispositif à semi-conducteur et boîtier de dispositif à semi-conducteur

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CN102903823A (zh) * 2012-07-17 2013-01-30 孙百贵 新型top led金属支架及其制造方法
CN206921851U (zh) * 2017-05-03 2018-01-23 深圳市嘉明特科技有限公司 防硫化的led封装结构

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JP2007180430A (ja) * 2005-12-28 2007-07-12 Toshiba Lighting & Technology Corp 発光ダイオード装置
CN107706271A (zh) * 2016-08-08 2018-02-16 深圳市斯迈得半导体有限公司 一种新型结构的led光源的制作方法
CN107706280A (zh) * 2016-08-08 2018-02-16 深圳市斯迈得半导体有限公司 一种通过真空溅射技术制造的led光源的制造方法
CN107845705A (zh) * 2016-09-18 2018-03-27 深圳市斯迈得半导体有限公司 基材通过真空溅射技术制造的新型led光源的制造方法
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