WO2020029357A1 - Base material for led bracket, led bracket, led light source and fabrication method therefor - Google Patents

Base material for led bracket, led bracket, led light source and fabrication method therefor Download PDF

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Publication number
WO2020029357A1
WO2020029357A1 PCT/CN2018/104144 CN2018104144W WO2020029357A1 WO 2020029357 A1 WO2020029357 A1 WO 2020029357A1 CN 2018104144 W CN2018104144 W CN 2018104144W WO 2020029357 A1 WO2020029357 A1 WO 2020029357A1
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WO
WIPO (PCT)
Prior art keywords
layer
substrate
led
bonding
coatings
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Application number
PCT/CN2018/104144
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French (fr)
Chinese (zh)
Inventor
刘云
李俊东
Original Assignee
深圳市斯迈得半导体有限公司
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Publication of WO2020029357A1 publication Critical patent/WO2020029357A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02Contact members

Definitions

  • the present application relates to the technical field of LED light sources, and in particular, to a substrate having improved stability and reliability, and an LED bracket and a novel LED light source manufactured thereby, and a manufacturing method thereof.
  • LED Since its introduction, LED has been widely valued and developed rapidly, which is inseparable from its own advantages. These advantages are summarized as: high brightness, low operating voltage, small power consumption, miniaturization, long life, impact resistance and stable performance.
  • TOP LEDs ie, top-surface or flat-emitting LEDs
  • problems such as product degradation and product failure are often encountered. Pollution reasons, such as halogenation, oxidation, etc.), these problems bring certain losses to customers and manufacturers.
  • the functional area of the LED product will be blackened, which will greatly reduce the reflection of light, the luminous flux will gradually decrease, and the color temperature will appear to drift and the product performance will be deteriorated, which will greatly reduce the reliability and service life of the LED . In severe cases, it directly leads to LED failure, that is, dead lights.
  • brackets of TOP LEDs are generally plated with silver on the substrate.
  • the silver plating layer can not only improve the conductivity and oxidation resistance, but also mainly play a role
  • the light reflected by the LED is used to significantly improve the light efficiency and the luminous flux of the LED.
  • this application proposes a highly stable LED bracket, an LED device, a manufacturing method thereof,
  • the present invention aims to solve the above technical defects and other technical problems, and can also provide more additional technical effects.
  • the substrate body may be selected from metal materials such as aluminum, copper, iron, or silver (not limited to the above-mentioned metal materials), and may be subjected to, for example, vacuum sputtering technology, ion plating technology, electroplating, and physical deposition. Or chemical plating technology, which deposits (such as coating or plating) one or more metal layers, compounds and other material layers on the surface of the substrate to form a welding interface.
  • metal materials such as aluminum, copper, iron, or silver
  • chemical plating technology which deposits (such as coating or plating) one or more metal layers, compounds and other material layers on the surface of the substrate to form a welding interface.
  • the base material, the filling material and the LED bracket can be fixedly connected.
  • the LED bracket can be embedded or sol-bonded.
  • the chip of the bracket can be mounted with a chip, and the chip can be soldered on There are bonding wires, and the chip and the bonding wires can be encapsulated with a sealing glue or a mixture of the sealing glue and a phosphor to form a specific LED package lamp bead.
  • a substrate (1) for an LED bracket including a metal substrate
  • the substrate includes: a substrate for a metal substrate arranged on the metal substrate; One or more coatings on one side of the LED chip; and / or one or more second metal layers deposited on the other side of the metal substrate opposite to the side used to bond the LED chip
  • an anti-oxidation treatment is performed on the other side of the metal substrate (7) opposite to the side used for bonding the LED chip.
  • the one or more coating layers include one or more first metal layers and one or more compound layers.
  • the first metal layer is a coating layer formed of silver or a silver alloy, aluminum or an aluminum alloy, iron or an iron alloy, or copper or a copper alloy; and the compound layer is formed by vacuum sputtering , Ion plating, electroplating, physical deposition or electroless deposition of a compound coating selected from one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: An aluminum oxide layer, a titanium dioxide layer, a pure silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: An aluminum oxide layer, a titanium dioxide layer, a pure silver layer, a titanium dioxide layer, a silicon dioxide layer, and an outermost titanium dioxide layer.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: A silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer and a silicon-containing compound layer directly adjacent to the copper substrate, such as A silicone oil layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer, a titanium dioxide layer, and a silicon dioxide directly adjacent to the copper substrate. Layer, and the outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer directly adjacent to the copper substrate, and an outermost trioxide. Two aluminum layers; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer directly adjacent to the copper substrate, and an outermost dioxide Silicon layer.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate that is used to bond the LED chip: nickel directly adjacent to the copper substrate Layer, silver layer, alumina layer, and outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a nickel layer, a silver layer, and a silicone oil layer (including Silicon compounds); or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a nickel layer, a silver layer, a titanium dioxide layer, A silicon oxide layer, and an outermost titanium dioxide layer.
  • the one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate, a pure silver layer, and an outermost side Alumina layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate, a pure silver layer, and an outermost side Of silicon dioxide layer.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: copper directly adjacent to the iron substrate Layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a pure silver layer, and a silicone oil layer (directly adjacent to the iron substrate). Silicon-containing compounds); or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate, a pure silver layer, a titanium dioxide layer, A silicon dioxide layer, and an outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a copper layer directly adjacent to the iron substrate, a pure silver layer, and an outermost layer. Al2O3 layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a copper layer directly adjacent to the iron substrate, a pure silver layer, and an outermost layer. Silicon dioxide layer.
  • the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: copper directly adjacent to the iron substrate Layer, nickel layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, A silicone oil layer (containing silicon compounds); or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, A titanium dioxide layer, a silicon dioxide layer, and an outermost titanium dioxide layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, and The outermost alumina layer; or
  • the one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, and The outermost silicon dioxide layer.
  • the second metal layer is sequentially arranged from the inside to the outside starting from the other side of the metal substrate opposite to the side used for bonding the LED chip: a copper layer and a member selected from A metal layer of one or more of silver, tin, nickel, and copper; or, an anti-oxidation treatment is performed on the other side of the metal substrate (7) opposite to the side used to bond the LED chip.
  • the second metal layer is sequentially arranged from the inside to the outside starting from the other side of the metal substrate opposite to the side used for bonding the LED chip: a copper layer and a member selected from A metal layer of one or more of silver, tin, and nickel; or, an anti-oxidation treatment is performed on the other side of the metal substrate (7) opposite to the side used to bond the LED chip.
  • the second metal layer is formed of one or more metals of silver, tin, and nickel; or, the side of the metal substrate (7) and the side for bonding the LED chip On the other side, do an anti-oxidation treatment.
  • the second metal layer is formed of one or more metals of silver, tin, nickel, and copper; or, in the metal substrate (7) and for bonding the LED chip The opposite side is anti-oxidized.
  • the present application also provides an LED bracket including the above-mentioned substrate, and an LED bracket body with a bowl and a cup-shaped LED bracket body formed with, for example, injection molding together with the substrate.
  • Glue material (2) wherein the reflective surface of the glue material (2) forms a bowl-cup structure with a divergence angle of 90-180 ° together with the substrate, and the glue material (2) is a thermoplastic material or Thermoset material.
  • the present application also provides a high-stability LED light source, including the LED bracket described above, an LED chip (4; 8) bound to the bottom of the cup, and an encapsulant (3) filled in the cup. ).
  • the present application also discloses a method for surface-treating an LED support substrate or a semi-finished product of an LED light source.
  • the method includes: vacuum-sputtering on a side of a metal substrate of the substrate for bonding LED chips. , Ion plating, electroplating, physical deposition or electroless plating techniques to deposit one or more surface coatings; and / or, vacuum sputtering on the other side of the metal substrate opposite to the side used to bond the LED chip , Ion plating, electroplating, physical deposition or electroless plating technology to deposit one or more second metal layers; or, to prevent oxidation on the other side of the metal substrate (7) opposite to the side used to bond the LED chip deal with.
  • the one or more coating layers include one or more first metal layers and one or more compound layers, wherein the compound layers are formed by vacuum sputtering or ion plating. , Electroplating, physical deposition or electroless deposition of a compound coating selected from the group consisting of one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
  • the second metal layer is one or more metal coatings formed of one or more metals of silver, tin, nickel, and copper; or, on the metal substrate (7)
  • the side opposite to the side used for bonding the LED chip is anti-oxidized.
  • the method is used to form a substrate or an LED light source semi-finished surface coating structure of an LED bracket specifically designed in the present application.
  • the base material and the bracket filling material can be formed into an LED bracket by a certain process, wherein the base material and the bracket filling material provide an LED bracket body structure through mutual embedding or sol-bonding design.
  • bracket cups and positive and negative electrodes for LED chip bonding separated by insulating glue.
  • the bottom of the bottom of the LED support cup is designed to be embedded or sol-bonded, wherein the glue (2) and the substrate are embedded or sol-bonded to each other.
  • the bottom of the bowl cup of the LED bracket can be mounted with a chip
  • the bonding LED chip (4) can be soldered with the bonding wire (5)
  • the flip chip (8) can be soldered with the bottom of the cup
  • the chip (4) (8) and the bonding wire (5) may be encapsulated with a sealing glue (3).
  • the side of the metal substrate used to bond the LED chip is deposited with metallic silver and compounds by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology.
  • the above substrate may be selected from metal materials such as aluminum, copper, iron, etc., and the substrate is not limited to the above metal materials, and the compound is one of aluminum oxide, silicon dioxide, titanium dioxide, silicon-containing compound, such as silicone oil, or Multiple.
  • the lower surface of the metal substrate is deposited with a metal material such as copper or silver by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology, and the metal material deposited on the lower surface is one or more of copper and silver.
  • a metal material such as copper or silver by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology
  • the metal material deposited on the lower surface is one or more of copper and silver.
  • the deposited metal materials are not limited to the above.
  • the bracket is filled with a specific rubber material, which can be selected from materials such as PPA, PCT, EMC, SMC or BT.
  • the substrate main body can be selected from aluminum, copper, or iron materials, and metal, compounds, etc. are deposited on the surface of the substrate through vacuum sputtering technology, ion plating technology, electroplating, physical deposition, or chemical plating technology. Materials to form a welding interface.
  • the substrate's reflectivity and gloss are improved, and the front and back side soldering process of the LED bracket substrate is realized.
  • the size, structure, molding, and processing technology of LED brackets and LED device products can be diversified and flexibly customized according to the application.
  • FIGS. 1A-1D are schematic diagrams of different perspectives of an LED bracket structure according to an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a substrate for an LED bracket according to an embodiment of the present application.
  • 3A-3C are schematic diagrams of different perspectives of an LED bracket structure according to another embodiment of the present application.
  • FIGS. 4A-4C are schematic diagrams of different perspectives of an LED bracket structure according to another embodiment of the present application.
  • 5A-5C are schematic structural diagrams of LED semi-finished products after welding according to an embodiment of the present application.
  • 6A-6B are schematic diagrams of a specific coating structure of a substrate according to a preferred embodiment of the present application.
  • FIGS. 7A-7B are schematic diagrams of a specific coating structure of a substrate according to another preferred embodiment of the present application.
  • FIGS. 8A-8B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • FIGS. 9A-9B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • 10A-10B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • 11A-11B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • 12A-12B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • FIG. 13 is a schematic diagram of a specific coating structure of a substrate according to another preferred embodiment of the present application.
  • FIG. 14 is a schematic diagram of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • FIG. 15 is a schematic diagram of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • FIG. 16 is a schematic diagram of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
  • the following technical solutions are adopted: it includes a substrate 1, a bracket filling adhesive material 2, an encapsulation adhesive 3, a chip 4 or 8, a bonding wire 5.
  • the LED bracket adopts an embedded or sol-bonded design 6.
  • the substrate 1 and the glue 2 are formed by a certain process to form the LED bracket shown in FIGS. 1A-1D.
  • a chip 4 or 8 is mounted on the bottom of the cup of FIGS. 5A-5C, a bonding wire 5 is soldered on the front-mounted LED chip 4, and the LED chip 8 and a bracket are flipped (FIGS. 5A-5C).
  • the bottom of the cup is soldered, and an encapsulant 3 is packaged above the chip 4 or 8 and the bonding wire 5.
  • the upper surface of the metal substrate 7 shown in Figs. 6-16 is vacuum-sputtered, ion-plated, electroplated, physically deposited, or electroless-plated.
  • Metal silver and compounds are deposited, and the metal substrate 7 can be selected from metal materials such as aluminum, copper, and iron, and is not limited to the above-mentioned metal materials.
  • the compound may be, for example, one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
  • the lower surface of the metal substrate 7 as shown in FIG. 6-16 can be deposited by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology on metallic materials such as copper, silver, and the like.
  • the deposited metal material is one or more of copper and silver, and the deposited metal material is not limited to the above.
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order from the aluminum substrate: (7)
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order from the aluminum substrate: (7)
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order: and the copper substrate (7) directly adjacent pure silver layer, alumina layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7) Layers, silicon-containing compounds, such as silicone oil; or
  • one or more coatings are arranged from the side of the metal substrate (7) used for bonding the LED chip from the inside to the outside in order: and the copper substrate (7) directly adjacent pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7) Layer, alumina layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7).
  • Layer, silica are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7).
  • Layer, silica are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7).
  • Layer silica.
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order: and the copper substrate (7) a nickel layer, a pure silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer adjacent to each other; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, silicon-containing compounds, such as silicone oil; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, alumina layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, silicon dioxide.
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip in order from the inside to the outside: (7) directly adjacent copper layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Pure silver layer, and outermost aluminum oxide; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , A pure silver layer, and an outermost silicon-containing compound, such as silicone oil; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Pure silver layer and outermost silicon dioxide.
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order to be directly adjacent to the iron substrate (7).
  • one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate (7) that is used for bonding LED chips: directly adjacent to the iron substrate (7) Copper layer, nickel layer, pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order to be directly adjacent to the iron substrate (7).
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Nickel, pure silver, and outermost silicon-containing compounds, such as silicone oil; or
  • one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order to be directly adjacent to the iron substrate (7).
  • the second metal layer is sequentially arranged from the inside to the outside starting from the other side of the metal substrate (7) opposite to the side used for bonding the LED chip: a copper layer and an outermost Silver layer.
  • the second metal layer is formed of one or more metals of silver, tin, and nickel.
  • the second metal layer is formed of one or more metals of silver, tin, nickel, and copper.
  • the bottom of the LED shown in FIGS. 3A-3C and 4A-4C may be an embedded or sol-bonded design, wherein the glue material 2 and the substrate 1 are embedded with each other or sol-bonded to form an integrated bracket body.
  • the specific stent filler 2 can be selected from PPA, PCT, EMC, SMC, BT and other materials.
  • the manufacturing process of the LED bracket and the LED light source / lamp beads of the present application are described as follows.
  • Substrate processing Select specific substrates through front and back vacuum sputtering technology, ion plating technology, electroplating, physical deposition or chemical plating technology to process metal, organic or inorganic related compound materials;
  • Stamping or etching Select substrates that have been processed by front and back surface processing or stamping;
  • LED bracket production Fill the corresponding structure LED bracket with thermoset or thermoplastic or pressed composite ( Figure 3A-3C);
  • LED packaging process LED semi-finished products are formed on the LED bracket ( Figure 3A-3C) by mounting chips 4, soldering and other processes ( Figure 5A-5C);
  • the encapsulating adhesive layer 3 is potted in the LED semi-finished product (FIGS. 5A-5C), and is baked and cured to form the required LED light source lamp beads.
  • the LED bracket is prepared through the above specific embodiments, and an LED light source is thus manufactured.
  • the dimensions of the high-stability LED light source of the present application can be customized.
  • the length and width are 0.5 mm to 100 mm and the thickness is 0.2 mm to 40 mm.
  • the process is realized and surface-treated according to the present application as described above.
  • Substrate stamping or etching Select substrate stamping or etching, select the stamped and etched metal substrate and vacuum-sputter, ion plating, electroplating, physical deposition or electroless plating surface treatment, the surface of the substrate is silver or the substrate is nickel , Silver is attached to the outer layer of nickel;
  • LED bracket production Fill the corresponding structure LED bracket with thermoset or thermoplastic or pressed composite ( Figure 3A-3C);
  • LED packaging process LED semi-finished products are formed on the LED bracket ( Figure 3A-3C) by mounting chips 4, soldering and other processes ( Figure 5A-5C);
  • the encapsulating adhesive layer 3 is potted in the LED semi-finished product (FIGS. 5A-5C), and is baked and cured to form the required LED light source lamp beads.
  • the LED bracket is prepared through the above specific embodiments, and an LED light source is thus manufactured.
  • the dimensions of the high-stability LED light source of the present application can be customized.
  • the length and width are 0.5 mm to 100 mm and the thickness is 0.2 mm to 40 mm.
  • the process is realized and surface-treated according to the present application as described above.
  • Substrate stamping or etching Select substrate stamping or etching, select the stamped and etched metal substrate and vacuum-sputter, ion plating, electroplating, physical deposition or electroless plating surface treatment, the surface of the substrate is silver or the substrate is nickel , Silver is attached to the outer layer of nickel;
  • LED bracket production Fill the corresponding structure LED bracket with thermoset or thermoplastic or pressed composite ( Figure 3A-3C);
  • the LED light source semi-finished product is formed on the LED bracket ( Figure 3A-3C) by mounting chips 4, soldering and other processes ( Figure 5A-5C);
  • LED light source semi-finished products Select step (1), step (2), step (3) LED light source semi-finished product vacuum sputtering technology, ion plating technology, electroplating, physical deposition or chemical plating technology. Selective surface treatment of organic or inorganic related compounds material;
  • the encapsulating adhesive layer 3 is potted in the LED semi-finished product (FIGS. 5A-5C), and is baked and cured to form the required LED light source lamp beads.
  • a substrate for an LED holder is provided, wherein an aluminum trioxide layer directly adjacent to the aluminum substrate 7 is coated on the side of the metal substrate 7 for bonding LED chips,
  • the thickness of the titanium dioxide layer, the pure silver layer, the aluminum oxide layer, and the outermost titanium dioxide layer can be between 30nm and 5000nm. Therefore, the chemical structure of the coating structure provided on the aluminum substrate in this embodiment is stable, and can prevent harmful elements (such as oxygen, sulfur, bromine, halogen elements, etc.) from the outside from reacting with the pure silver layer.
  • harmful elements such as oxygen, sulfur, bromine, halogen elements, etc.
  • the thickness of the silver layer is generally 0.5-3.0 microns.
  • the test results show that the average luminous flux attenuation of the LED device manufactured by using the above substrate of the present application is about 1% after 1000 hours of lighting and aging; while the LED device manufactured by using the conventional TOP LED support substrate material passes the 1000 hour point Bright aging luminous flux attenuation averages about 10%.

Abstract

A base material (1) used for an LED bracket, an LED bracket, an LED light source and a fabrication method therefor. The base material (1) comprises a metal matrix (7), and one or more coating layers arranged on a side of the metal matrix (7) used for bonding LED chips (4, 8); and/or one or more second metal layers deposited on the other side of the metal matrix (7) opposite to the side used for bonding the LED chips (4, 8); or an anti-oxidation treatment is performed on the other side of the metal matrix (7) opposite to the side used for bonding the LED chips (4, 8). The present invention also relates to an LED bracket that has the base material (1), an LED light source obtained by packaging the LED chips (4, 8) in the LED bracket, and a method for performing a surface treatment on the base material (1) of the LED bracket or a semi-finished product of the LED light source. By means of the foregoing technical solution, the material of the base material (1) may be protected from being easily vulcanized, brominated, oxidized, etc., thus improving the reflectivity and gloss of the base material (1).

Description

用于LED支架的基材、LED支架、LED光源及其制造方法Base material for LED bracket, LED bracket, LED light source and manufacturing method thereof 技术领域Technical field
本申请涉及LED光源技术领域,具体涉及具有改善的稳定性和可靠性的基材,以及由此制造的LED支架和新型LED光源及其制造方法。The present application relates to the technical field of LED light sources, and in particular, to a substrate having improved stability and reliability, and an LED bracket and a novel LED light source manufactured thereby, and a manufacturing method thereof.
背景技术Background technique
LED自从问世以上,受到广泛重视而得到迅速发展,是与它本身所具有的优点分不开的。这些优点概括起来是:亮度高、工作电压低、功耗小、小型化、寿命长、耐冲击和性能稳定。TOP LED(即,顶面或平面发光LED)的发展前景极为广阔,目前正朝着更高亮度、更高耐气候性、更高的发光密度、更高的发光均匀性方向发展。但实际在生产使用TOP LED产品的过程中,经常会遭遇产品劣化导致产品失效等问题(业内也称这种现象为“产品硫化”,其主要是因支架表面被硫化导致,但也可能存在其它污染原因,如卤化、氧化等等),这些问题给客户和生产厂家都带来一定损失。在出现上述硫化现象后,LED产品的功能区会黑化,导致对光反射大大降低,光通量会逐渐下降,而且导致色温出现明显漂移而使得产品性能劣化,从而大大降低LED的可靠性和使用寿命。严重时,直接导致LED失效,即死灯。Since its introduction, LED has been widely valued and developed rapidly, which is inseparable from its own advantages. These advantages are summarized as: high brightness, low operating voltage, small power consumption, miniaturization, long life, impact resistance and stable performance. The development prospects of TOP LEDs (ie, top-surface or flat-emitting LEDs) are extremely broad, and they are currently moving towards higher brightness, higher weather resistance, higher luminous density, and higher luminous uniformity. However, in the process of producing and using TOP LED products, problems such as product degradation and product failure are often encountered. Pollution reasons, such as halogenation, oxidation, etc.), these problems bring certain losses to customers and manufacturers. After the above-mentioned vulcanization phenomenon occurs, the functional area of the LED product will be blackened, which will greatly reduce the reflection of light, the luminous flux will gradually decrease, and the color temperature will appear to drift and the product performance will be deteriorated, which will greatly reduce the reliability and service life of the LED . In severe cases, it directly leads to LED failure, that is, dead lights.
现有技术的这种缺陷的存在,其中一个主要原因在于:TOP LED的支架一般会在基材上镀银,该镀银层不仅可改善导电性能,抗氧化性,而且主要还会起到将LED发出的光反射出的作用,用于显著提高光效和LED的光通量。当LED在高温焊接时,如果碰到了硫或硫蒸气,则会造成支架上的银层与硫发生化学反应2Ag+S=Ag 2S↓,形成Ag 2S硫化物,该Ag 2S硫化物视反应量的多少而呈现深黄色或黑色的 颜色,不仅导致导电性能和抗氧化性显著降低,而且会显著减少LED的反射出光,严重降低光效和光通量。在严重的情况下,镀银层的绝大部分或几乎全部的银都通过发生硫化反应被耗尽,从而导致金丝断裂,造成LED开路,导致LED死灯。 One of the main reasons for the existence of such defects in the prior art is that the brackets of TOP LEDs are generally plated with silver on the substrate. The silver plating layer can not only improve the conductivity and oxidation resistance, but also mainly play a role The light reflected by the LED is used to significantly improve the light efficiency and the luminous flux of the LED. When the LED is soldered at high temperature, if it encounters sulfur or sulfur vapor, it will cause the silver layer on the bracket to chemically react with sulfur 2Ag + S = Ag 2 S ↓, forming Ag 2 S sulfide, the Ag 2 S sulfide Depending on the amount of reaction, a dark yellow or black color will not only lead to a significant reduction in electrical conductivity and oxidation resistance, but also significantly reduce the reflected light from the LED, seriously reducing light efficiency and luminous flux. In severe cases, most or almost all of the silver in the silver-plated layer is depleted through the occurrence of a sulfurization reaction, which causes the gold wire to break, causing the LED to open circuit and causing the LED to die.
众所周知,由于TOP LED支架气密性不佳,尤其是在LED工作状态下的高温环境下,更容易造成上述硫化失效,使得比如支架底部镀银层发黑,从而显著降低了LED器件的稳定性、可靠性、色温性能、光衰减性能和使用寿命,甚至导致LED器件在使用不久后即发生死灯现象。As we all know, due to the poor air tightness of the TOP LED bracket, especially in the high temperature environment of the LED working state, the above-mentioned vulcanization failure is more likely to occur, making the silver plating layer on the bottom of the bracket black, which significantly reduces the stability of the LED device , Reliability, color temperature performance, light attenuation performance and service life, and even led to the phenomenon of dead lights in LED devices soon after use.
本发明的说明书的此背景技术部分中所包括的信息,包括本文中所引用的任何参考文献及其任何描述或讨论,仅出于技术参考的目的而被包括在内,并且不被认为是将限制本发明范围的主题。The information included in this background section of the description of the invention, including any references cited herein and any descriptions or discussions thereof, is included for technical reference purposes only and is not considered to be Subject matter that limits the scope of the invention.
因此,本领域急需解决背景技术中存在的上述的和其它的技术问题和缺陷,而开发出能够克服上述缺陷和其它缺陷的新型的高稳定性的LED器件和LED支架。Therefore, there is an urgent need in the art to solve the above-mentioned and other technical problems and defects existing in the background technology, and to develop a new type of high-stability LED device and LED bracket capable of overcoming the above-mentioned and other defects.
发明内容Summary of the invention
针对现有技术中存在的上述技术缺陷以及其它技术问题,本申请提出了高稳定性的LED支架、LED器件及其制造方法、In view of the above-mentioned technical defects and other technical problems in the prior art, this application proposes a highly stable LED bracket, an LED device, a manufacturing method thereof,
本发明旨在解决以上的技术缺陷和其它的技术问题,并且还可另外提供更多的附加技术效果。The present invention aims to solve the above technical defects and other technical problems, and can also provide more additional technical effects.
根据本申请的一方面,基材主体可选取铝材或铜材或铁材或银材等金属材料(不限于上述金属材料),可通过比如真空溅射技术、离子镀技术、电镀、物理沉积或化学镀技术,在基材的表面沉积(比如涂上或镀上)一层或多层的金属层、化合物等材料层,形成焊接界面。可通过控制表面化合物及银层厚度,材质密度,而保护基材的材料表面不容易被硫化,溴化,氧化等,提高基材的稳定性、光泽度和对LED光的反射率。并且,使得能够实现LED支架基板正反面的焊接工艺。According to one aspect of the present application, the substrate body may be selected from metal materials such as aluminum, copper, iron, or silver (not limited to the above-mentioned metal materials), and may be subjected to, for example, vacuum sputtering technology, ion plating technology, electroplating, and physical deposition. Or chemical plating technology, which deposits (such as coating or plating) one or more metal layers, compounds and other material layers on the surface of the substrate to form a welding interface. By controlling the surface compound and the thickness of the silver layer and the material density, the surface of the material of the substrate can be protected from being easily vulcanized, brominated, and oxidized, thereby improving the stability, gloss, and reflectivity of the LED light. Moreover, it enables the welding process of the front and back surfaces of the LED holder substrate.
根据本申请的另一方面,可将基材、填充胶材与LED支架固定连接,其中,LED支架可采用嵌入或溶胶粘接设计,所述的支架杯底可安装有芯片,芯片上可焊接有键合导线,芯片和键合导线的上方可封装有封装胶或封装胶与荧光粉混合物,从而形成特定LED封装灯珠。According to another aspect of the present application, the base material, the filling material and the LED bracket can be fixedly connected. The LED bracket can be embedded or sol-bonded. The chip of the bracket can be mounted with a chip, and the chip can be soldered on There are bonding wires, and the chip and the bonding wires can be encapsulated with a sealing glue or a mixture of the sealing glue and a phosphor to form a specific LED package lamp bead.
更具体而言,根据本申请,提供了一种用于LED支架的基材(1),所述基材包括金属基体,其中,所述基材包括:布置在所述金属基体的用于邦定LED芯片的那一面上的一个或多个涂层;和/或在所述金属基体的与用于邦定LED芯片的那一面相反的另一面上沉积的一层或多层第二金属层;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。More specifically, according to the present application, there is provided a substrate (1) for an LED bracket, the substrate including a metal substrate, wherein the substrate includes: a substrate for a metal substrate arranged on the metal substrate; One or more coatings on one side of the LED chip; and / or one or more second metal layers deposited on the other side of the metal substrate opposite to the side used to bond the LED chip Or, an anti-oxidation treatment is performed on the other side of the metal substrate (7) opposite to the side used for bonding the LED chip.
根据本申请的一实施例,所述一个或多个涂层包括一层或多层第一金属层,以及一层或多层化合物层。According to an embodiment of the present application, the one or more coating layers include one or more first metal layers and one or more compound layers.
根据本申请的另一实施例,所述第一金属层是银或银合金、铝或铝合金、铁或铁合金、或者铜或铜合金形成的涂层;并且所述化合物层是通过真空溅射、离子镀、电镀、物理沉积或化学镀沉积的化合物涂层,所述化合物选自三氧化二铝、二氧化硅、二氧化钛、含硅化合物、比如硅油中的一种或多种。According to another embodiment of the present application, the first metal layer is a coating layer formed of silver or a silver alloy, aluminum or an aluminum alloy, iron or an iron alloy, or copper or a copper alloy; and the compound layer is formed by vacuum sputtering , Ion plating, electroplating, physical deposition or electroless deposition of a compound coating selected from one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
根据本申请的另一实施例,所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铝基体直接相邻的三氧化二铝层、二氧化钛层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层。According to another embodiment of the present application, the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: An aluminum oxide layer, a titanium dioxide layer, a pure silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer.
根据本申请的另一实施例,所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铝基体直接相邻的三氧化二铝层、二氧化钛层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层。According to another embodiment of the present application, the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: An aluminum oxide layer, a titanium dioxide layer, a pure silver layer, a titanium dioxide layer, a silicon dioxide layer, and an outermost titanium dioxide layer.
根据本申请的另一实施例,所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体 直接相邻的纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者According to another embodiment of the present application, the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: A silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体直接相邻的纯银层、含硅化合物层,比如硅油层;或者The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer and a silicon-containing compound layer directly adjacent to the copper substrate, such as A silicone oil layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体直接相邻的纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer, a titanium dioxide layer, and a silicon dioxide directly adjacent to the copper substrate. Layer, and the outermost titanium dioxide layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体直接相邻的纯银层,以及最外侧的三氧化二铝层;或者The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer directly adjacent to the copper substrate, and an outermost trioxide. Two aluminum layers; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体直接相邻的纯银层,以及最外侧的二氧化硅层。The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a pure silver layer directly adjacent to the copper substrate, and an outermost dioxide Silicon layer.
根据本申请的另一实施例,所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体直接相邻的镍层、银层、三氧化二铝层,以及最外侧的二氧化钛层;或者According to another embodiment of the present application, the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate that is used to bond the LED chip: nickel directly adjacent to the copper substrate Layer, silver layer, alumina layer, and outermost titanium dioxide layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体直接相邻的镍层、银层、硅油层(含硅化合物);或者The one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a nickel layer, a silver layer, and a silicone oil layer (including Silicon compounds); or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体直接相邻的镍层、银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层。The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a nickel layer, a silver layer, a titanium dioxide layer, A silicon oxide layer, and an outermost titanium dioxide layer.
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体直接相邻的镍层,纯银层,以及最外侧的三氧化二铝层;或者The one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate, a pure silver layer, and an outermost side Alumina layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体直接相邻的镍层,纯银层, 以及最外侧的二氧化硅层。The one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate, a pure silver layer, and an outermost side Of silicon dioxide layer.
根据本申请的另一实施例,所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体直接相邻的铜层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者According to another embodiment of the present application, the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: copper directly adjacent to the iron substrate Layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体直接相邻的铜层、纯银层、硅油层(含硅化合物);或者The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a pure silver layer, and a silicone oil layer (directly adjacent to the iron substrate). Silicon-containing compounds); or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体直接相邻的铜层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate, a pure silver layer, a titanium dioxide layer, A silicon dioxide layer, and an outermost titanium dioxide layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体直接相邻的铜层、纯银层以及最外侧的三氧化二铝层;或者The one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a copper layer directly adjacent to the iron substrate, a pure silver layer, and an outermost layer. Al2O3 layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体直接相邻的铜层、纯银层以及最外侧的二氧化硅层。The one or more coatings are arranged from the side of the metal substrate for bonding the LED chip from the inside to the outside in order: a copper layer directly adjacent to the iron substrate, a pure silver layer, and an outermost layer. Silicon dioxide layer.
根据本申请的另一实施例,所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体直接相邻的铜层、镍层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者According to another embodiment of the present application, the one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate used for bonding the LED chip: copper directly adjacent to the iron substrate Layer, nickel layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体直接相邻的铜层、镍层、纯银层、硅油层(含硅化合物);或者The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, A silicone oil layer (containing silicon compounds); or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体直接相邻的铜层、镍层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, A titanium dioxide layer, a silicon dioxide layer, and an outermost titanium dioxide layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那 一面起始由里向外地依次布置为:与铁基体直接相邻的铜层、镍层、纯银层以及最外侧的三氧化二铝层;或者The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, and The outermost alumina layer; or
所述一个或多个涂层从所述金属基体的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体直接相邻的铜层、镍层、纯银层以及最外侧的二氧化硅层。The one or more coatings are arranged from the side of the metal substrate for bonding LED chips from the inside to the outside in order: a copper layer, a nickel layer, a pure silver layer directly adjacent to the iron substrate, and The outermost silicon dioxide layer.
根据本申请的另一实施例,所述第二金属层从所述金属基体的与用于邦定LED芯片的那一面相反的另一面起始由里向外地依次布置为:铜层以及选自银、锡、镍、铜中的一种或多种的金属层;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。According to another embodiment of the present application, the second metal layer is sequentially arranged from the inside to the outside starting from the other side of the metal substrate opposite to the side used for bonding the LED chip: a copper layer and a member selected from A metal layer of one or more of silver, tin, nickel, and copper; or, an anti-oxidation treatment is performed on the other side of the metal substrate (7) opposite to the side used to bond the LED chip.
根据本申请的另一实施例,所述第二金属层从所述金属基体的与用于邦定LED芯片的那一面相反的另一面起始由里向外地依次布置为:铜层以及选自银、锡、镍中的一种或多种的金属层;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。According to another embodiment of the present application, the second metal layer is sequentially arranged from the inside to the outside starting from the other side of the metal substrate opposite to the side used for bonding the LED chip: a copper layer and a member selected from A metal layer of one or more of silver, tin, and nickel; or, an anti-oxidation treatment is performed on the other side of the metal substrate (7) opposite to the side used to bond the LED chip.
根据本申请的另一实施例,所述第二金属层由银、锡、镍中的一种或多种金属形成;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。According to another embodiment of the present application, the second metal layer is formed of one or more metals of silver, tin, and nickel; or, the side of the metal substrate (7) and the side for bonding the LED chip On the other side, do an anti-oxidation treatment.
根据本申请的另一实施例,所述第二金属层由银、锡、镍、铜中的一种或多种金属形成;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。According to another embodiment of the present application, the second metal layer is formed of one or more metals of silver, tin, nickel, and copper; or, in the metal substrate (7) and for bonding the LED chip The opposite side is anti-oxidized.
本申请还提供了一种LED支架,其包括上述基材,以及与所述基材一起例如通过注塑成型形成比如相互嵌入或溶胶粘接或溶胶粘接构造的、带碗杯的LED支架本体的胶材(2),其中,所述胶材(2)的反射面与所述基材一起形成90-180°的发散角度的碗杯结构,并且所述胶材(2)为热塑性的材料或热固性的材料。The present application also provides an LED bracket including the above-mentioned substrate, and an LED bracket body with a bowl and a cup-shaped LED bracket body formed with, for example, injection molding together with the substrate. Glue material (2), wherein the reflective surface of the glue material (2) forms a bowl-cup structure with a divergence angle of 90-180 ° together with the substrate, and the glue material (2) is a thermoplastic material or Thermoset material.
本申请还提供了一种高稳定性的LED光源,包括上述LED支架,邦定在所述碗杯杯底的LED芯片(4;8),以及灌注在所述碗杯内的封 装胶(3)。The present application also provides a high-stability LED light source, including the LED bracket described above, an LED chip (4; 8) bound to the bottom of the cup, and an encapsulant (3) filled in the cup. ).
本申请另外还公开了一种对LED支架基材或LED光源半成品表面处理的方法,所述方法包括:在所述基材的金属基体的用于邦定LED芯片的那一面上通过真空溅射、离子镀、电镀、物理沉积或化学镀技术沉积一个或多个表面涂层;并且/或者,在所述金属基体的与用于邦定LED芯片的那一面相反的另一面上通过真空溅射、离子镀、电镀、物理沉积或化学镀技术沉积一层或多层第二金属层;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。The present application also discloses a method for surface-treating an LED support substrate or a semi-finished product of an LED light source. The method includes: vacuum-sputtering on a side of a metal substrate of the substrate for bonding LED chips. , Ion plating, electroplating, physical deposition or electroless plating techniques to deposit one or more surface coatings; and / or, vacuum sputtering on the other side of the metal substrate opposite to the side used to bond the LED chip , Ion plating, electroplating, physical deposition or electroless plating technology to deposit one or more second metal layers; or, to prevent oxidation on the other side of the metal substrate (7) opposite to the side used to bond the LED chip deal with.
根据本申请的另一实施例,所述一个或多个涂层包括一层或多层第一金属层以及一层或多层化合物层,其中,所述化合物层是通过真空溅射、离子镀、电镀、物理沉积或化学镀沉积的化合物涂层,所述化合物选自三氧化二铝、二氧化硅、二氧化钛、含硅化合物、比如硅油中的一种或多种。According to another embodiment of the present application, the one or more coating layers include one or more first metal layers and one or more compound layers, wherein the compound layers are formed by vacuum sputtering or ion plating. , Electroplating, physical deposition or electroless deposition of a compound coating selected from the group consisting of one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
根据本申请的另一实施例,所述第二金属层是由银、锡、镍、铜中的一种或多种金属形成的一个或多个金属涂层;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。According to another embodiment of the present application, the second metal layer is one or more metal coatings formed of one or more metals of silver, tin, nickel, and copper; or, on the metal substrate (7) The side opposite to the side used for bonding the LED chip is anti-oxidized.
根据本申请的另一实施例,所述方法用于形成本申请特定设计的LED支架的基材或LED光源半成品表面涂层构造。According to another embodiment of the present application, the method is used to form a substrate or an LED light source semi-finished surface coating structure of an LED bracket specifically designed in the present application.
根据本申请的另一实施例,基材和支架填充胶材可通过一定工艺成型为LED支架,其中基材与支架填充胶材通过相互嵌入或溶胶粘设计而提供了LED支架本体构造,其带有支架碗杯和通过绝缘胶材隔开的用于LED芯片邦定的正负极。优选的是,LED支架杯底的底部为嵌入或溶胶粘接设计,其中胶材(2)和基材相互嵌入或溶胶粘接。According to another embodiment of the present application, the base material and the bracket filling material can be formed into an LED bracket by a certain process, wherein the base material and the bracket filling material provide an LED bracket body structure through mutual embedding or sol-bonding design. There are bracket cups and positive and negative electrodes for LED chip bonding separated by insulating glue. Preferably, the bottom of the bottom of the LED support cup is designed to be embedded or sol-bonded, wherein the glue (2) and the substrate are embedded or sol-bonded to each other.
根据一优选实施例,LED支架的碗杯的杯底可安装有芯片,正装LED芯片(4)上可焊接有键合导线(5),倒装LED芯片(8)可与支架杯底焊接,芯片(4)(8)和键合导线(5)的上方可封装有封装胶(3)。According to a preferred embodiment, the bottom of the bowl cup of the LED bracket can be mounted with a chip, the bonding LED chip (4) can be soldered with the bonding wire (5), and the flip chip (8) can be soldered with the bottom of the cup, The chip (4) (8) and the bonding wire (5) may be encapsulated with a sealing glue (3).
优选的是,金属基体用于邦定LED芯片的那一面通过真空溅射 技术、离子镀技术、电镀、物理沉积或化学镀技术沉积金属银和化合物。上述基材可选自铝材,铜材,铁材等金属材料,并且基材不限于上述金属材料,化合物为三氧化二铝,二氧化硅,二氧化钛,含硅化合物、比如硅油当中一种或多种。Preferably, the side of the metal substrate used to bond the LED chip is deposited with metallic silver and compounds by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology. The above substrate may be selected from metal materials such as aluminum, copper, iron, etc., and the substrate is not limited to the above metal materials, and the compound is one of aluminum oxide, silicon dioxide, titanium dioxide, silicon-containing compound, such as silicone oil, or Multiple.
优选的是,金属基体下表面通过真空溅射技术、离子镀技术、电镀、物理沉积或化学镀技术沉积金属铜、银等金属材料,上述下表面所沉积金属材料为铜、银一种或多种,且所沉积金属材料不局限于上述几种。Preferably, the lower surface of the metal substrate is deposited with a metal material such as copper or silver by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology, and the metal material deposited on the lower surface is one or more of copper and silver. And the deposited metal materials are not limited to the above.
优选的是,所述支架填充特定胶材,其可选择为PPA,PCT,EMC,SMC或BT等材料。Preferably, the bracket is filled with a specific rubber material, which can be selected from materials such as PPA, PCT, EMC, SMC or BT.
本申请有益效果包括但不限于:基材主体例如可选取铝或铜或铁材,通过真空溅射技术、离子镀技术、电镀、物理沉积或化学镀技术,在基材表面沉积金属,化合物等材料,形成焊接界面。通过控制表面化合物及银层厚度,材质密度,保护基材材料表面不容易被硫化,溴化,氧化等,提高基材反射率和光泽度,实现LED支架基板正反面焊接工艺。并且,LED支架和LED器件产品的尺寸,结构,支架的成型,加工工艺可多样化并可根据应用场合灵活地定制。The beneficial effects of this application include, but are not limited to, the substrate main body can be selected from aluminum, copper, or iron materials, and metal, compounds, etc. are deposited on the surface of the substrate through vacuum sputtering technology, ion plating technology, electroplating, physical deposition, or chemical plating technology. Materials to form a welding interface. By controlling the thickness of the surface compound and the silver layer, the material density, and protecting the surface of the substrate material from being easily sulfided, brominated, oxidized, etc., the substrate's reflectivity and gloss are improved, and the front and back side soldering process of the LED bracket substrate is realized. In addition, the size, structure, molding, and processing technology of LED brackets and LED device products can be diversified and flexibly customized according to the application.
本发明的更多实施例还能够实现其它未一一列出的有利技术效果,这些其它的技术效果在下文中可能有部分描述,并且对于本领域的技术人员而言在阅读了本发明后是可以预期和理解的。Further embodiments of the present invention can also achieve other advantageous technical effects that are not listed one by one. These other technical effects may be partially described below, and it is possible for those skilled in the art after reading the present invention. Anticipated and understood.
本发明内容部分旨在以简化的形式引入将在下文中进一步描述的构思和选择,以帮助阅读者更易于理解本发明。本发明内容并非旨在识别所要求保护的主题的关键特征或基本特征,也并非旨在用于限制所要求保护的主题的范围。所有的上述特征都将被理解为只是示例性的,并且可以从本发明公开中收集关于结构和方法的更多的特征和目的。This summary is intended to introduce concepts and options in a simplified form that are further described below, to help readers understand the present invention more easily. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. All of the above features will be understood as merely exemplary, and more features and purposes regarding the structure and method may be gathered from the present disclosure.
在以下对附图和具体实施方式的描述中,将阐述本申请的一个或多个实施例的细节。本申请的多个方面和优点将在以下描述中部分地 阐述,或者可由该描述而显而易见,或者可通过实施本申请而获知。In the following description of the drawings and the detailed description, details of one or more embodiments of the present application will be explained. Various aspects and advantages of the present application will be partially explained in the following description, or will be apparent from the description, or may be learned through implementation of the present application.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
本说明书中描述了针对本领域普通技术人员的本申请的完整而能够实施的公开,包括其优选实施例,其中引用了附图,这些附图仅仅是为了图示和辅助描述具体实施例起见,而不具有任何限制性,并且附图中的尺寸并非严格按照比例绘制。This specification describes the complete and implementable disclosure of this application for those of ordinary skill in the art, including its preferred embodiments, in which drawings are cited, these drawings are merely for illustration and to assist in describing specific embodiments, Without any limitation, the dimensions in the drawings are not drawn strictly to scale.
结合在说明书中并构成说明书一部分的这些附图图示了本申请的实施例,并且与说明书一起用于解释本申请的原理和一些具体实施方案。这些附图包括:The drawings incorporated in and forming a part of the specification illustrate embodiments of the present application, and together with the description, serve to explain the principles of the application and some specific implementations. These drawings include:
图1A-1D为根据本申请的一实施例的LED支架结构的不同视角的示意图;1A-1D are schematic diagrams of different perspectives of an LED bracket structure according to an embodiment of the present application;
图2为根据本申请的一实施例的用于LED支架的基材的示意图;2 is a schematic diagram of a substrate for an LED bracket according to an embodiment of the present application;
图3A-3C为根据本申请的另一实施例的LED支架结构的不同视角的示意图;3A-3C are schematic diagrams of different perspectives of an LED bracket structure according to another embodiment of the present application;
图4A-4C为根据本申请的另一实施例的LED支架结构的不同视角的示意图;4A-4C are schematic diagrams of different perspectives of an LED bracket structure according to another embodiment of the present application;
图5A-5C为根据本申请的一实施例的经过焊接,LED半成品的结构示意图;5A-5C are schematic structural diagrams of LED semi-finished products after welding according to an embodiment of the present application;
图6A-6B是根据本申请的一优选实施例的基材的具体涂层构造的示意图;6A-6B are schematic diagrams of a specific coating structure of a substrate according to a preferred embodiment of the present application;
图7A-7B是根据本申请的另一优选实施例的基材的具体涂层构造的示意图;7A-7B are schematic diagrams of a specific coating structure of a substrate according to another preferred embodiment of the present application;
图8A-8B是根据本申请的又一优选实施例的基材的具体涂层构造的示意图;8A-8B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application;
图9A-9B是根据本申请的又一优选实施例的基材的具体涂层构造的示意图;9A-9B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application;
图10A-10B是根据本申请的又一优选实施例的基材的具体涂层 构造的示意图;10A-10B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application;
图11A-11B是根据本申请的又一优选实施例的基材的具体涂层构造的示意图;11A-11B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application;
图12A-12B是根据本申请的又一优选实施例的基材的具体涂层构造的示意图;12A-12B are schematic diagrams of a specific coating structure of a substrate according to still another preferred embodiment of the present application;
图13是根据本申请的又一优选实施例的基材的具体涂层构造的示意图;13 is a schematic diagram of a specific coating structure of a substrate according to another preferred embodiment of the present application;
图14是根据本申请的又一优选实施例的基材的具体涂层构造的示意图;14 is a schematic diagram of a specific coating structure of a substrate according to still another preferred embodiment of the present application;
图15是根据本申请的又一优选实施例的基材的具体涂层构造的示意图;和15 is a schematic diagram of a specific coating structure of a substrate according to still another preferred embodiment of the present application; and
图16是根据本申请的又一优选实施例的基材的具体涂层构造的示意图。FIG. 16 is a schematic diagram of a specific coating structure of a substrate according to still another preferred embodiment of the present application.
具体实施方式detailed description
现在将参考附图对本申请的多个非限制性实施例做出详细描述。本说明书中涉及的实施例仅意图解释本申请的原理而并非限制本申请的范围。本申请的可专利范围仅由权利要求书所限定。A number of non-limiting embodiments of the present application will now be described in detail with reference to the drawings. The embodiments referred to in this specification are only intended to explain the principles of the application and not to limit the scope of the application. The patentable scope of this application is limited only by the claims.
本领域的技术人员可以理解,本文中所使用的词组和用语是出于描述的目的,而不应当被认为是限制性的。例如,本文中的“包括”、“包含”或“具有”及其变型的使用,旨在开放式地包括其后列出的项及其等同项以及附加的项。Those skilled in the art will understand that the phrases and terms used herein are for the purpose of description and should not be considered limiting. For example, the use of "including," "including," or "having" and variations thereof herein is intended to openly include the items listed thereafter and their equivalents, as well as additional items.
本领域的技术人员可以理解,本申请中的部分术语,比如“支架填充胶材”不具有限制性意义,而是本领域的技术人员能够想到并理解的便于与金属基材一起成型并具有LED支架所需绝缘性能的任何材料,例如PPA,PCT,EMC,SMC,BT等树脂材料,等等。Those skilled in the art can understand that some terms in this application, such as “stent filling material”, do not have a restrictive meaning, but those skilled in the art can think of and understand that it is convenient to mold with a metal substrate and have LEDs. Any material required for the insulation performance of the bracket, such as PPA, PCT, EMC, SMC, BT and other resin materials, etc.
本领域的技术人员可以理解,在本申请中,“支架”和“LED支架”是可互换使用的。Those skilled in the art can understand that in the present application, the "bracket" and "LED bracket" are used interchangeably.
参照附图1-16,图示了本申请的若干优选的实施方案,具体陈述如下。Referring to Figures 1-16, there are illustrated several preferred embodiments of the present application, which are specifically stated as follows.
如图1-图6A、6B所示,根据本申请的各种具体实施例,采用以下技术方案:它包含基材1、支架填充胶材2、封装胶3、芯片4或8、键合导线5,LED支架采用嵌入或溶胶粘接设计6,基材1和胶材2通过一定工艺成型,而形成如图1A-1D所示的LED支架。As shown in FIGS. 1 to 6A and 6B, according to various specific embodiments of the present application, the following technical solutions are adopted: it includes a substrate 1, a bracket filling adhesive material 2, an encapsulation adhesive 3, a chip 4 or 8, a bonding wire 5. The LED bracket adopts an embedded or sol-bonded design 6. The substrate 1 and the glue 2 are formed by a certain process to form the LED bracket shown in FIGS. 1A-1D.
根据本申请的另一实施例,在图5A-5C的杯底安装有芯片4或8,在正装LED芯片4上焊接有键合导线5,倒装LED芯片8与支架(图5A-5C)杯底焊接,在芯片4或8和键合导线5的上方封装有封装胶3。According to another embodiment of the present application, a chip 4 or 8 is mounted on the bottom of the cup of FIGS. 5A-5C, a bonding wire 5 is soldered on the front-mounted LED chip 4, and the LED chip 8 and a bracket are flipped (FIGS. 5A-5C). The bottom of the cup is soldered, and an encapsulant 3 is packaged above the chip 4 or 8 and the bonding wire 5.
根据一优选实施例,金属基体7的图6-16所示的上表面,即,用于邦定LED芯片的那一面,通过真空溅射技术、离子镀技术、电镀、物理沉积或化学镀技术沉积金属银和化合物,金属基体7的材料可选取铝材,铜材,铁材等金属材料,并且不限于上述金属材料。化合物的一些实例例如可以为三氧化二铝,二氧化硅,二氧化钛,含硅化合物、比如硅油当中一种或多种。According to a preferred embodiment, the upper surface of the metal substrate 7 shown in Figs. 6-16, that is, the side used for bonding the LED chip, is vacuum-sputtered, ion-plated, electroplated, physically deposited, or electroless-plated. Metal silver and compounds are deposited, and the metal substrate 7 can be selected from metal materials such as aluminum, copper, and iron, and is not limited to the above-mentioned metal materials. Some examples of the compound may be, for example, one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
优选的是,金属基体7的如图6-16所示的下表面,可通过真空溅射技术、离子镀技术、电镀、物理沉积或化学镀技术沉积金属铜、银等金属材料,上述下表面所沉积金属材料为铜、银一种或多种,且所沉积金属材料不局限于上述几种。Preferably, the lower surface of the metal substrate 7 as shown in FIG. 6-16 can be deposited by vacuum sputtering technology, ion plating technology, electroplating, physical deposition or electroless plating technology on metallic materials such as copper, silver, and the like. The deposited metal material is one or more of copper and silver, and the deposited metal material is not limited to the above.
根据本申请的一优选实施例,如图6A所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铝基体(7)直接相邻的三氧化二铝层、二氧化钛层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层。According to a preferred embodiment of the present application, as shown in FIG. 6A, one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order from the aluminum substrate: (7) The directly adjacent aluminum oxide layer, titanium oxide layer, pure silver layer, aluminum oxide layer, and outermost titanium oxide layer.
根据本申请的一优选实施例,如图6B所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铝基体(7)直接相邻的三氧化二铝层、二氧化钛层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层。According to a preferred embodiment of the present application, as shown in FIG. 6B, one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order from the aluminum substrate: (7) The directly adjacent aluminum oxide layer, titanium dioxide layer, pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer.
根据本申请的一优选实施例,如图7A所示,一个或多个涂层从 金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者According to a preferred embodiment of the present application, as shown in FIG. 7A, one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order: and the copper substrate (7) directly adjacent pure silver layer, alumina layer, and outermost titanium dioxide layer; or
如图15所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的纯银层、含硅化合物、比如硅油;或者As shown in FIG. 15, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7) Layers, silicon-containing compounds, such as silicone oil; or
根据本申请的一优选实施例,如图7B所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者According to a preferred embodiment of the present application, as shown in FIG. 7B, one or more coatings are arranged from the side of the metal substrate (7) used for bonding the LED chip from the inside to the outside in order: and the copper substrate (7) directly adjacent pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
如图10A所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的纯银层、氧化铝层;或者As shown in FIG. 10A, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7) Layer, alumina layer; or
如图10B所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的纯银层、二氧化硅。As shown in FIG. 10B, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: pure silver directly adjacent to the copper substrate (7). Layer, silica.
根据本申请的一优选实施例,如图12A所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的镍层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者According to a preferred embodiment of the present application, as shown in FIG. 12A, one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip from the inside to the outside in order: and the copper substrate (7) a nickel layer, a pure silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer adjacent to each other; or
如图16所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的镍层、纯银层、含硅化合物、比如硅油;或者As shown in FIG. 16, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, silicon-containing compounds, such as silicone oil; or
如图12B所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的镍层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者As shown in FIG. 12B, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
如图11A所示,一个或多个涂层从金属基体(7)的用于邦定LED 芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的镍层、纯银层、氧化铝层;或者As shown in FIG. 11A, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, alumina layer; or
如图11B所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的镍层、纯银层、二氧化硅。As shown in FIG. 11B, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7). , Pure silver layer, silicon dioxide.
根据本申请的一优选实施例,如图8A所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者According to a preferred embodiment of the present application, as shown in FIG. 8A, one or more coatings are arranged from the side of the metal substrate (7) for bonding the LED chip in order from the inside to the outside: (7) directly adjacent copper layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
如图8B所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者As shown in FIG. 8B, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
如图9A所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、纯银层以及最外侧的三氧化二铝;或者As shown in FIG. 9A, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Pure silver layer, and outermost aluminum oxide; or
如图13所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、纯银层以及最外侧的含硅化合物、比如硅油;或者As shown in FIG. 13, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , A pure silver layer, and an outermost silicon-containing compound, such as silicone oil; or
如图9B所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、纯银层以及最外侧的二氧化硅。As shown in FIG. 9B, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Pure silver layer and outermost silicon dioxide.
根据本申请的一优选实施例,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、镍层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者According to a preferred embodiment of the present application, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order to be directly adjacent to the iron substrate (7). Copper layer, nickel layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
根据本申请的一优选实施例,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7) 直接相邻的铜层、镍层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者According to a preferred embodiment of the present application, one or more coatings are sequentially arranged from the inside to the outside starting from the side of the metal substrate (7) that is used for bonding LED chips: directly adjacent to the iron substrate (7) Copper layer, nickel layer, pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
根据本申请的一优选实施例,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、镍层、纯银层以及最外侧的三氧化二铝;或者According to a preferred embodiment of the present application, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order to be directly adjacent to the iron substrate (7). Copper, nickel, pure silver, and outermost aluminum oxide; or
如图14所示,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、镍层、纯银层以及最外侧的含硅化合物、比如硅油;或者As shown in FIG. 14, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7) , Nickel, pure silver, and outermost silicon-containing compounds, such as silicone oil; or
根据本申请的一优选实施例,一个或多个涂层从金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、镍层、纯银层以及最外侧的二氧化硅。According to a preferred embodiment of the present application, one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order to be directly adjacent to the iron substrate (7). Copper layer, nickel layer, pure silver layer and outermost silicon dioxide.
根据本申请的一优选实施例,第二金属层从金属基体(7)的与用于邦定LED芯片的那一面相反的另一面起始由里向外地依次布置为:铜层以及最外侧的银层。According to a preferred embodiment of the present application, the second metal layer is sequentially arranged from the inside to the outside starting from the other side of the metal substrate (7) opposite to the side used for bonding the LED chip: a copper layer and an outermost Silver layer.
根据本申请的一优选实施例,第二金属层由银、锡、镍中的一种或多种金属形成。或者,第二金属层由银、锡、镍、铜中的一种或多种金属形成。According to a preferred embodiment of the present application, the second metal layer is formed of one or more metals of silver, tin, and nickel. Alternatively, the second metal layer is formed of one or more metals of silver, tin, nickel, and copper.
优选的是,图3A-3C、图4A-4C所示的LED的底部可为嵌入或溶胶粘接设计,其中胶材2和基材1相互嵌入或溶胶粘接成型而形成一体式支架本体。Preferably, the bottom of the LED shown in FIGS. 3A-3C and 4A-4C may be an embedded or sol-bonded design, wherein the glue material 2 and the substrate 1 are embedded with each other or sol-bonded to form an integrated bracket body.
优选的是,特定的支架填充胶材2可选择PPA,PCT,EMC,SMC,BT等材料。Preferably, the specific stent filler 2 can be selected from PPA, PCT, EMC, SMC, BT and other materials.
根据本申请的若干典型的实施例,本申请的LED支架以及LED光源/灯珠的制备工艺方案实施例如下所述。According to several typical embodiments of the present application, the manufacturing process of the LED bracket and the LED light source / lamp beads of the present application are described as follows.
工艺方案实施例(一)Process scheme example (1)
具体工艺如下:The specific process is as follows:
基材加工:选取特定基材经过正反面真空溅射技术、离子镀技术、电镀、物理沉积或化学镀技术处理金属,有机或无机相关化合物材料;Substrate processing: Select specific substrates through front and back vacuum sputtering technology, ion plating technology, electroplating, physical deposition or chemical plating technology to process metal, organic or inorganic related compound materials;
冲压或蚀刻:选取经过正反表面加工处理过的基材冲压或蚀刻;Stamping or etching: Select substrates that have been processed by front and back surface processing or stamping;
LED支架制作:用热固或热塑或压合成型方式填充相应结构LED支架(图3A-3C);LED bracket production: Fill the corresponding structure LED bracket with thermoset or thermoplastic or pressed composite (Figure 3A-3C);
LED封装工艺:在LED支架(图3A-3C)上通过进行安装芯片4,焊接等工艺成型LED半成品(图5A-5C);LED packaging process: LED semi-finished products are formed on the LED bracket (Figure 3A-3C) by mounting chips 4, soldering and other processes (Figure 5A-5C);
封装胶层3灌封在LED半成品(图5A-5C),并且进行烘烤固化成型、做成所需的LED光源灯珠。The encapsulating adhesive layer 3 is potted in the LED semi-finished product (FIGS. 5A-5C), and is baked and cured to form the required LED light source lamp beads.
通过上述具体实施例来制备LED支架,并由此制成LED光源。作为一个实施例,本申请的高稳定性LED光源其尺寸可定制长宽分别为0.5mm~100mm,厚度为0.2mm~40mm,LED支架的成型加工工艺可使用冲压,模塑或冲压,压合工艺实现并根据本申请如上所述进行表面处理。The LED bracket is prepared through the above specific embodiments, and an LED light source is thus manufactured. As an example, the dimensions of the high-stability LED light source of the present application can be customized. The length and width are 0.5 mm to 100 mm and the thickness is 0.2 mm to 40 mm. The process is realized and surface-treated according to the present application as described above.
工艺方案实施例(二)Process scheme example (b)
具体工艺如下:The specific process is as follows:
基体冲压或蚀刻:选取基材冲压或蚀刻,选取冲压蚀刻好的金属基材通过真空溅射技术、离子镀技术、电镀、物理沉积或化学镀技术表面处理,基体表面附着银或基体表面附着镍,镍外层附着银;Substrate stamping or etching: Select substrate stamping or etching, select the stamped and etched metal substrate and vacuum-sputter, ion plating, electroplating, physical deposition or electroless plating surface treatment, the surface of the substrate is silver or the substrate is nickel , Silver is attached to the outer layer of nickel;
LED支架制作:用热固或热塑或压合成型方式填充相应结构LED支架(图3A-3C);LED bracket production: Fill the corresponding structure LED bracket with thermoset or thermoplastic or pressed composite (Figure 3A-3C);
支架表面处理:选取步骤(1)、步骤(2)加工好支架真空溅射技术、离子镀技术、电镀、物理沉积或化学镀技术选择性表面处理有机或无机相关化合物材料;Surface treatment of the stent: Select steps (1) and (2) to process the stent vacuum sputtering technology, ion plating technology, electroplating, physical deposition or chemical plating technology to selectively surface-treat organic or inorganic related compound materials
LED封装工艺:在LED支架(图3A-3C)上通过进行安装芯片4,焊接等工艺成型LED半成品(图5A-5C);LED packaging process: LED semi-finished products are formed on the LED bracket (Figure 3A-3C) by mounting chips 4, soldering and other processes (Figure 5A-5C);
封装胶层3灌封在LED半成品(图5A-5C),并且进行烘烤固化成型、做成所需的LED光源灯珠。The encapsulating adhesive layer 3 is potted in the LED semi-finished product (FIGS. 5A-5C), and is baked and cured to form the required LED light source lamp beads.
通过上述具体实施例来制备LED支架,并由此制成LED光源。 作为一个实施例,本申请的高稳定性LED光源其尺寸可定制长宽分别为0.5mm~100mm,厚度为0.2mm~40mm,LED支架的成型加工工艺可使用冲压,模塑或冲压,压合工艺实现并根据本申请如上所述进行表面处理。The LED bracket is prepared through the above specific embodiments, and an LED light source is thus manufactured. As an example, the dimensions of the high-stability LED light source of the present application can be customized. The length and width are 0.5 mm to 100 mm and the thickness is 0.2 mm to 40 mm. The process is realized and surface-treated according to the present application as described above.
工艺方案实施例(三)Examples of process solutions (3)
具体工艺如下:The specific process is as follows:
基体冲压或蚀刻:选取基材冲压或蚀刻,选取冲压蚀刻好的金属基材通过真空溅射技术、离子镀技术、电镀、物理沉积或化学镀技术表面处理,基体表面附着银或基体表面附着镍,镍外层附着银;Substrate stamping or etching: Select substrate stamping or etching, select the stamped and etched metal substrate and vacuum-sputter, ion plating, electroplating, physical deposition or electroless plating surface treatment, the surface of the substrate is silver or the substrate is nickel , Silver is attached to the outer layer of nickel;
LED支架制作:用热固或热塑或压合成型方式填充相应结构LED支架(图3A-3C);LED bracket production: Fill the corresponding structure LED bracket with thermoset or thermoplastic or pressed composite (Figure 3A-3C);
LED封装工艺:在LED支架(图3A-3C)上通过进行安装芯片4,焊接等工艺成型LED光源半成品(图5A-5C);LED packaging process: the LED light source semi-finished product is formed on the LED bracket (Figure 3A-3C) by mounting chips 4, soldering and other processes (Figure 5A-5C);
LED光源半成品表面处理:选取步骤(1)、步骤(2)、步骤(3)LED光源半成品真空溅射技术、离子镀技术、电镀、物理沉积或化学镀技术选择性表面处理有机或无机相关化合物材料;Surface treatment of LED light source semi-finished products: Select step (1), step (2), step (3) LED light source semi-finished product vacuum sputtering technology, ion plating technology, electroplating, physical deposition or chemical plating technology. Selective surface treatment of organic or inorganic related compounds material;
封装胶层3灌封在LED半成品(图5A-5C),并且进行烘烤固化成型、做成所需的LED光源灯珠。The encapsulating adhesive layer 3 is potted in the LED semi-finished product (FIGS. 5A-5C), and is baked and cured to form the required LED light source lamp beads.
光衰减性能的对比实验Comparative experiment of light attenuation performance
提供根据本申请一优选实施例的用于LED支架的基材,其中,在金属基体7的用于邦定LED芯片的那一面上涂布与铝基体7直接相邻的三氧化二铝层、二氧化钛层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层,其厚度可在30nm-5000nm之间。由此,该实施例中的设置在铝基体上的涂层构造化学特性稳定,可阻止外界的有害元素(例如氧,硫,溴,卤族元素等)与其中纯银层发生反应,从而起到抗硫化、抗氧化、抗卤化的效果,从而大大提高LED器件的稳定性、可 靠性、色温性能、光衰减性能和使用寿命。A substrate for an LED holder according to a preferred embodiment of the present application is provided, wherein an aluminum trioxide layer directly adjacent to the aluminum substrate 7 is coated on the side of the metal substrate 7 for bonding LED chips, The thickness of the titanium dioxide layer, the pure silver layer, the aluminum oxide layer, and the outermost titanium dioxide layer can be between 30nm and 5000nm. Therefore, the chemical structure of the coating structure provided on the aluminum substrate in this embodiment is stable, and can prevent harmful elements (such as oxygen, sulfur, bromine, halogen elements, etc.) from the outside from reacting with the pure silver layer. To the effect of anti-sulfurization, anti-oxidation, anti-halogenation, thereby greatly improving the stability, reliability, color temperature performance, light attenuation performance and service life of LED devices.
作为对比,提供常规的包括铜及其表面银层的TOP LED基材,In contrast, conventional TOP LED substrates including copper and its surface silver layer are provided,
其银层的厚度一般为0.5-3.0微米。The thickness of the silver layer is generally 0.5-3.0 microns.
根据本申请的上述基材和常规TOP LED支架基材这两种基材分别制成LED器件。According to the above-mentioned substrates of the present application and the conventional TOP LED support substrates, these two substrates are respectively made into LED devices.
分别选取根据本申请的上述基材制作的LED器件和常规TOP LED支架基材材制作的LED器件各10支,分别进行高温老化实验。其实验条件为:环境温度120度,电压9V,电流100ma,通过1000小时点亮老化,之后测量本申请和传统支架基材制作的LED器件在老化后的平均光通量。10 LED devices made according to the above-mentioned substrate of the present application and 10 LED devices made of conventional TOP LED support substrate materials were selected respectively, and were subjected to high-temperature aging experiments. The experimental conditions are as follows: the ambient temperature is 120 degrees, the voltage is 9V, and the current is 100ma. After 1000 hours of lighting and aging, the average luminous flux of the LED device made by the present application and the traditional stent substrate after aging is measured.
测试结果表明,用本申请的上述基材制作的LED器件在通过1000小时点亮老化的光通量衰减平均值为大约1%;而用常规TOP LED支架基材材制作的LED器件在通过1000小时点亮老化的光通量衰减平均值为大约10%。The test results show that the average luminous flux attenuation of the LED device manufactured by using the above substrate of the present application is about 1% after 1000 hours of lighting and aging; while the LED device manufactured by using the conventional TOP LED support substrate material passes the 1000 hour point Bright aging luminous flux attenuation averages about 10%.
上述对比测试结果表明,根据本申请进行涂层处理的LED支架基材,可使得LED器件的光衰减性能与现有技术相比得到极大的改进。The above comparative test results show that the LED bracket substrate subjected to the coating treatment according to the present application can greatly improve the light attenuation performance of the LED device compared with the prior art.
出于说明的目的而提出了对本发明的对若干个实施例的以上描述。虽然本文在前文中仅示出并描述了优选实施例的某些特征,但是本领域的普通技术人员应当理解,所述前文描述并非意图是穷举性的,也并非将本发明限于所公开的特定特征和/或形式。本领域的普通技术人员能够想到许多修改和变型,这些都属于本发明的范围内。因此,应该理解的是,所附权利要求书旨在覆盖落入本申请的实质性构思内的全部此类修改和变型。本申请的保护范围仅由所附权利要求书来限定。The foregoing description of several embodiments of the invention has been presented for the purposes of illustration. Although only certain features of the preferred embodiments have been shown and described herein, those of ordinary skill in the art should understand that the foregoing description is not intended to be exhaustive or to limit the present invention to the disclosed Specific features and / or forms. Many modifications and variations can be conceived by those skilled in the art, which are all within the scope of the present invention. Therefore, it should be understood that the appended claims are intended to cover all such modifications and variations that fall within the substantive idea of the present application. The scope of protection of this application is limited only by the appended claims.

Claims (20)

  1. 一种用于LED支架的基材(1),所述基材(1)包括金属基体(7),其中,所述基材(1)包括:A substrate (1) for an LED bracket, the substrate (1) comprising a metal substrate (7), wherein the substrate (1) comprises:
    布置在所述金属基体(7)的用于邦定LED芯片的那一面上的一个或多个涂层;One or more coatings arranged on the side of the metal substrate (7) for bonding LED chips;
    在所述金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上沉积的一层或多层第二金属层;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。One or more second metal layers deposited on the other side of the metal substrate (7) opposite to the side used for bonding the LED chip; or, the metal substrate (7) is used for bonding The opposite side of the LED chip is anti-oxidized.
  2. 根据权利要求1所述的用于LED支架的基材(1),其中,所述一个或多个涂层包括一层或多层第一金属层,以及一层或多层化合物层。The substrate (1) for an LED bracket according to claim 1, wherein the one or more coatings include one or more first metal layers, and one or more compound layers.
  3. 根据权利要求2所述的用于LED支架的基材(1),其中:The substrate (1) for an LED holder according to claim 2, wherein:
    所述第一金属层是铝或铝合金、铁或铁合金、或者铜或铜合金;并且所述化合物层是通过真空溅射、离子镀、电镀、物理沉积或化学镀沉积的化合物涂层,所述化合物选自三氧化二铝、二氧化硅、二氧化钛、含硅化合物、比如硅油中的一种或多种。The first metal layer is aluminum or an aluminum alloy, iron or an iron alloy, or copper or a copper alloy; and the compound layer is a compound coating deposited by vacuum sputtering, ion plating, electroplating, physical deposition, or electroless plating. The compound is selected from one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
  4. 根据权利要求1-3中任一项所述的用于LED支架的基材(1),其中,所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铝基体(7)直接相邻的三氧化二铝层、二氧化钛层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层。The substrate (1) for an LED holder according to any one of claims 1-3, wherein the one or more coatings are from the metal substrate (7) for bonding LED chips. That side is arranged from the inside to the outside in order: an aluminum oxide layer, a titanium dioxide layer, a pure silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer, which are directly adjacent to the aluminum substrate (7).
  5. 根据权利要求1-3中任一项所述的用于LED支架的基材(1),其中,所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铝基体(7)直接相邻的三氧化二铝层、二氧化钛层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层。The substrate (1) for an LED holder according to any one of claims 1-3, wherein the one or more coatings are from the metal substrate (7) for bonding LED chips. That side is arranged from the inside to the outside in order: an alumina layer, a titania layer, a pure silver layer, a titania layer, a silica layer, and an outermost titania layer directly adjacent to the aluminum substrate (7).
  6. 根据权利要求1-3中任一项所述的用于LED支架的基材(1), 其中:The substrate (1) for an LED holder according to any one of claims 1-3, wherein:
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a pure silver layer directly adjacent to the copper substrate (7), An aluminum trioxide layer, and an outermost titanium dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的与铜基体(7)直接相邻的纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者The one or more coatings are sequentially arranged from the inside to the outside from the side of the metal substrate (7) that is used to bond the LED chip: directly adjacent to the copper substrate (7) and the copper substrate ( 7) directly adjacent pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的纯银层、氧化铝层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a pure silver layer directly adjacent to the copper substrate (7), An aluminum oxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的纯银层、二氧化硅层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a pure silver layer directly adjacent to the copper substrate (7), A silica layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的纯银层,以及最外侧的含硅化合物、比如硅油。The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a pure silver layer directly adjacent to the copper substrate (7), And the outermost silicon-containing compounds, such as silicone oil.
  7. 根据权利要求1-3中任一项所述的用于LED支架的基材(1),其中:The substrate (1) for an LED holder according to any one of claims 1-3, wherein:
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的镍层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7), A silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的与铜基体(7)直接相邻的镍层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者The one or more coatings are sequentially arranged from the inside to the outside from the side of the metal substrate (7) that is used to bond the LED chip: directly adjacent to the copper substrate (7) and the copper substrate ( 7) directly adjacent nickel layer, pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的镍层、纯 银层、氧化铝层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7), Silver, alumina; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的镍层、纯银层、二氧化硅层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7), Silver layer, silicon dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铜基体(7)直接相邻的镍层、纯银层,以及最外侧的含硅化合物、比如硅油。The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a nickel layer directly adjacent to the copper substrate (7), A layer of silver, and an outermost silicon-containing compound, such as silicone oil.
  8. 根据权利要求1-3中任一项所述的用于LED支架的基材(1),其中,The substrate (1) for an LED holder according to any one of claims 1-3, wherein:
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7), A silver layer, an aluminum oxide layer, and an outermost titanium dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者The one or more coatings are sequentially arranged from the inside to the outside from the side of the metal substrate (7) that is used to bond the LED chips: A silver layer, a titanium dioxide layer, a silicon dioxide layer, and an outermost titanium dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、纯银层以及最外侧的三氧化二铝层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7), A silver layer and an outermost aluminum oxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、纯银层以及最外侧的二氧化硅层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer directly adjacent to the iron substrate (7), Silver layer and outermost silicon dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、银层、含硅化合物、比如硅油。The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer, silver directly adjacent to the iron substrate (7), Layers, silicon-containing compounds, such as silicone oil.
  9. 根据权利要求1-3中任一项所述的用于LED支架的基材(1),其中,The substrate (1) for an LED holder according to any one of claims 1-3, wherein:
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、镍 层、纯银层、三氧化二铝层,以及最外侧的二氧化钛层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer, nickel directly adjacent to the iron substrate (7), and nickel. Layer, pure silver layer, alumina layer, and outermost titanium dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、镍层、纯银层、二氧化钛层、二氧化硅层,以及最外侧的二氧化钛层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer, nickel directly adjacent to the iron substrate (7), and nickel. Layer, pure silver layer, titanium dioxide layer, silicon dioxide layer, and outermost titanium dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、镍层、纯银层以及最外侧的三氧化二铝层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer, nickel directly adjacent to the iron substrate (7), and nickel. Layer, pure silver layer, and outermost alumina layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、镍层、纯银层以及最外侧的二氧化硅层;或者The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer, nickel directly adjacent to the iron substrate (7), and nickel. Layer, pure silver layer, and outermost silicon dioxide layer; or
    所述一个或多个涂层从所述金属基体(7)的用于邦定LED芯片的那一面起始由里向外地依次布置为:与铁基体(7)直接相邻的铜层、镍层、银层、含硅化合物、比如硅油。The one or more coatings are arranged from the side of the metal substrate (7) for bonding LED chips from the inside to the outside in order: a copper layer, nickel directly adjacent to the iron substrate (7), and nickel. Layers, silver layers, silicon-containing compounds, such as silicone oil.
  10. 根据权利要求1、2、3、4或5所述的用于LED支架的基材(1),其中,所述第二金属层从所述金属基体(7)的与用于邦定LED芯片的那一面相反的另一面起始由里向外地依次布置为:铜层以及选自银、锡、镍、铜中的一种或多种的金属层;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。The substrate (1) for an LED holder according to claim 1, 2, 3, 4 or 5, wherein the second metal layer is from the metal substrate (7) and used for bonding LED chips. The other side of the opposite side is arranged from the inside to the outside in order: a copper layer and a metal layer selected from one or more of silver, tin, nickel, and copper; or, on the metal substrate (7), The side opposite to the side used to bond the LED chip is anti-oxidized.
  11. 根据权利要求1、2、3、6或7所述的用于LED支架的基材(1),其中,所述第二金属层从所述金属基体(7)的与用于邦定LED芯片的那一面相反的另一面起始由里向外布置为:选自银、锡、镍中的一种或多种的金属层;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。The substrate (1) for an LED holder according to claim 1, 2, 3, 6 or 7, wherein the second metal layer is from the metal substrate (7) and used for bonding LED chips. The other side of the opposite side is arranged from the inside to the outside: a metal layer selected from one or more of silver, tin, and nickel; or, the metal substrate (7) is used for bonding LED chips. The other side is anti-oxidized.
  12. 根据权利要求1、2、3、8或9所述的用于LED支架的基材(1),其中,所述第二金属层从所述金属基体(7)的与用于邦定LED芯片的那一面相反的另一面起始由里向外布置为:选自铜、银、锡、镍中的一种或多种的金属层;或者,在金属基体(7)的与用于邦定LED 芯片的那一面相反的另一面上做防氧化处理。The substrate (1) for an LED holder according to claim 1, 2, 3, 8 or 9, wherein the second metal layer is from the metal substrate (7) and used for bonding LED chips. The other side of the opposite side is arranged from the inside to the outside: a metal layer selected from one or more of copper, silver, tin, and nickel; or, used for bonding of the metal substrate (7) The opposite side of the LED chip is anti-oxidized.
  13. 一种LED支架,其包括根据上述权利要求中任一项所述的基材(1),以及与所述基材(1)一起成形为带碗杯构造的LED支架本体的胶材(2),An LED bracket comprising the substrate (1) according to any one of the preceding claims, and an adhesive material (2) formed with the substrate (1) into an LED bracket body with a bowl structure. ,
    其中,所述胶材(2)的反射面与所述基材一起形成90-180°的发散角度的碗杯构造,并且所述胶材(2)为热塑性的材料或热固性的材料。Wherein, the reflecting surface of the rubber material (2) forms a bowl structure with a divergence angle of 90-180 ° together with the substrate, and the rubber material (2) is a thermoplastic material or a thermosetting material.
  14. 根据权利要求13所述的LED支架,其中,所述胶材(2)选自下列树脂材料中的一种或多种:PPA、PCT、EMC、SMC、BT及其任意组合。The LED bracket according to claim 13, wherein the adhesive material (2) is selected from one or more of the following resin materials: PPA, PCT, EMC, SMC, BT, and any combination thereof.
  15. 根据权利要求13或14所述的LED支架,其中,所述基材(1)和所述胶材(2)通过相互嵌入或溶胶粘接而形成所述LED支架本体。The LED bracket according to claim 13 or 14, wherein the base material (1) and the glue material (2) form the LED bracket body by being embedded or sol-bonded to each other.
  16. 一种高稳定性的LED光源,包括根据权利要求13-15中任一项所述的LED支架,邦定在所述碗杯杯底的LED芯片(4;8),以及灌注在所述碗杯内的封装胶(3)。A high-stability LED light source, comprising the LED bracket according to any one of claims 13-15, an LED chip (4; 8) bound to the bottom of the cup, and poured into the bowl Sealant inside the cup (3).
  17. 一种对用于LED支架的基材(1)进行表面处理的方法,所述方法包括:A method for surface treating a substrate (1) for an LED bracket, the method comprising:
    在所述基材(1)的金属基体(7)的用于邦定LED芯片的那一面上通过真空溅射、离子镀、电镀、物理沉积或化学镀技术沉积一个或多个表面涂层;和Depositing one or more surface coatings on the side of the metal substrate (7) of the base material (1) for bonding LED chips by vacuum sputtering, ion plating, electroplating, physical deposition or electroless plating; with
    在所述金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上通过真空溅射、离子镀、电镀、物料沉积或化学镀技术沉积一层或多层第二金属层;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。Depositing one or more second metal layers on the other side of the metal substrate (7) opposite to the side for bonding the LED chip by vacuum sputtering, ion plating, electroplating, material deposition or electroless plating technology Or, an anti-oxidation treatment is performed on the other side of the metal substrate (7) opposite to the side used for bonding the LED chip.
  18. 根据权利要求17所述的方法,其中,所述一个或多个涂层包括一层或多层第一金属层以及一层或多层化合物层,其中,所述化合物层是通过真空溅射、离子镀、电镀、物理沉积或化学镀沉积的化合物涂层,所述化合物选自三氧化二铝、二氧化硅、二氧化钛、含硅化合物、比如硅油中的一种或多种。The method of claim 17, wherein the one or more coatings include one or more first metal layers and one or more compound layers, wherein the compound layers are formed by vacuum sputtering, A coating of a compound deposited by ion plating, electroplating, physical deposition or electroless plating, said compound being selected from one or more of alumina, silicon dioxide, titanium dioxide, silicon-containing compounds, such as silicone oil.
  19. 根据权利要求17或18所述的方法,其中,所述第二金属层是由银、锡、镍、铜中的一种或多种金属形成的一个或多个金属涂层;或者,在金属基体(7)的与用于邦定LED芯片的那一面相反的另一面上做防氧化处理。The method according to claim 17 or 18, wherein the second metal layer is one or more metal coatings formed of one or more metals of silver, tin, nickel, and copper; or The other side of the substrate (7) opposite to the side used for bonding the LED chip is subjected to anti-oxidation treatment.
  20. 根据权利要求17所述的方法,其中,所述方法用于形成根据权利要求1-12中任一项所述的LED支架的基材(1)的表面涂层构造。The method according to claim 17, wherein the method is used to form a surface coating structure of a substrate (1) of an LED holder according to any one of claims 1-12.
PCT/CN2018/104144 2018-08-06 2018-11-02 Base material for led bracket, led bracket, led light source and fabrication method therefor WO2020029357A1 (en)

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