CN106252338A - 一种高导热mcob的封装方法 - Google Patents

一种高导热mcob的封装方法 Download PDF

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CN106252338A
CN106252338A CN201610852069.6A CN201610852069A CN106252338A CN 106252338 A CN106252338 A CN 106252338A CN 201610852069 A CN201610852069 A CN 201610852069A CN 106252338 A CN106252338 A CN 106252338A
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copper base
substrate
packing
mcob
led chip
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田皓鹏
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Jiangsu Wenrun Optoelectronic Co Ltd
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Jiangsu Wenrun Optoelectronic Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Abstract

本发明公开了一种高导热MCOB的封装方法，包括以下步骤：步骤一、提供铜基板；步骤二、在所述铜基板的表面先电镀镍层，再在镍层上电镀银层；步骤三、在镀银层上丝网印刷油墨形成固晶区域；步骤四、将中间为镂空的FR‑4基板粘接在铜基板上，形成反射腔；步骤五、在FR‑4基板的边缘且靠近焊盘处做多次防焊处理，形成高于FR‑4基板的用于围坝的台阶；步骤六、将LED芯片通过固晶胶固定于铜基板的固晶区域上、反射腔内，LED芯片通过键合丝连接至FR‑4基板上；步骤七、在反射腔内、LED芯片上填充硅胶。本发明将LED芯片直接固定在铜基板上的封装方法，具有散热性能良好，反射率高的优点；结构简单，便于批量生产。

Description

一种高导热MCOB的封装方法
技术领域
本发明涉及LED技术领域，特别是一种高导热MCOB的封装方法。
背景技术
发光二极管LED是一种固态半导体器件，它可以直接把电能转化成光能，随着LED技术的迅猛发展，目前已逐渐替代传统白炽灯和节能灯，广泛应用于照明领域。
MCOB是LED封装结构中的一种常见形态，通常使用铝作为基板，铝基板表面刷绝缘胶后电镀形成线路，将LED芯片直接固定在铝基板上后进行封胶。
该结构的缺点是铝基板上使用的绝缘胶通常会阻隔热量的导出，通常较好的绝缘胶导热系数仅为0.2 W/m.K，远低于金属的导热能力。
发明内容
本发明所要解决的技术问题是克服现有技术的不足而提供一种高导热MCOB的封装方法，本发明具有散热性能良好，反射率高的优点。
本发明为解决上述技术问题采用以下技术方案：
根据本发明提出的一种高导热MCOB的封装方法，包括以下步骤：
步骤一、提供铜基板；
步骤二、在所述铜基板的表面先电镀镍层，再在镍层上电镀银层；
步骤三、在镀银层上丝网印刷油墨形成固晶区域；
步骤四、将中间为镂空的FR-4基板粘接在铜基板上，形成反射腔；
步骤五、在FR-4基板的边缘且靠近焊盘处做多次防焊处理，形成高于FR-4基板的用于围坝的台阶；
步骤六、将LED芯片通过固晶胶固定于铜基板的固晶区域上、反射腔内，LED芯片通过键合丝连接至FR-4基板上；
步骤七、在反射腔内、LED芯片上填充硅胶。
作为本发明所述的一种高导热MCOB的封装方法进一步优化方案，铜基板的导热系数达383.8W/m.K。
作为本发明所述的一种高导热MCOB的封装方法进一步优化方案，台阶的厚度为0.2mm。
作为本发明所述的一种高导热MCOB的封装方法进一步优化方案，用于围坝的台阶环绕在固晶区域周围。
作为本发明所述的一种高导热MCOB的封装方法进一步优化方案，硅胶为含有荧光粉的硅胶。
本发明采用以上技术方案与现有技术相比，具有以下技术效果：
（1）本发明将LED芯片直接固定在铜基板上的封装方法，具有散热性能良好，反射率高的优点；
（2）将芯片直接安装在金属基板上，热量直接通过基板向外导出，规避了绝缘层带来的高热阻，提升基板散热性能，从而大幅提升LED产品寿命。
附图说明
图1是FR-4板；
图2是铜基板；
图3是FR-4板和铜基板的组合图；
图4是本发明的结构图。
图中的附图标记解释为：1-FR-4板，2-铜基板，3-LED芯片，4-键合丝，5-填充硅胶，6-丝印油墨。
具体实施方式
下面结合附图对本发明的技术方案做进一步的详细说明：
图4是本发明的结构图，工艺方法如下，一种高导热MCOB的封装方法，包括以下步骤：
步骤一、提供铜基板2，如图2所示，采用纯铜基板做为导热基底；
步骤二、在所述铜基板的表面先电镀镍层，再在镍层上电镀银层；形成高亮反射层；
步骤三、在镀银层上丝网印刷油墨6形成固晶区域；
步骤四、如图1是FR-4板，图3是FR-4板和铜基板的组合图；将中间为镂空的FR-4基板1粘接在铜基板上，形成反射腔；
步骤五、在FR-4基板的边缘且靠近焊盘处做多次防焊处理，印刷一次烘干一次，重复若干次，形成高于FR-4基板的用于围坝的台阶；围坝区域环绕固晶区域一周；
步骤六、将LED芯片3通过固晶胶固定于铜基板的固晶区域上、反射腔内，LED芯片通过键合丝4连接至FR-4基板上；
步骤七、在反射腔内、LED芯片上填充硅胶5。
铜基板的导热系数达383.8W/m.K。
台阶的厚度为0.2mm。
用于围坝的台阶环绕在固晶区域周围。
硅胶为含有荧光粉的硅胶。
当LED发光时，热量可直接由金属材料导出，其基板为金属铜制成，导热系数达383.8W/m.K，封装成型后产品热阻仅为5-10℃/W，这种结构的LED具有热阻小，寿命长的优点。
通常MCOB所使用的金属基板为铝制，铝基板表面刷绝缘胶后电镀形成线路，将LED芯片直接固定在铝基板表面后进行封胶，因绝缘胶通常为高热阻材料制制作，会阻隔热量导出，作为改进，本发明采用纯铜基板做为导热基底，通过在铜表面进行镀银处理形成高亮反射层，通过在镀银层上丝网印刷油墨形成固晶功能区，将中间为镂空的FR-4基板与铜基板进行粘接，形成反射结构的腔体，FR-4基板边缘靠近焊盘处做多次防焊处理，形成高于基板平面0.2mm的台阶，用于围坝， LED芯片通过固晶胶固定于铜基板固晶区域，通过键合丝连接至FR-4基板，反射腔内填充含有荧光粉的硅胶。
所述将晶片直接固定在不含任何热量阻隔的金属基板上，减少热量导出的通道。
铜基板表面先镀镍，再镀银，镍层有良好的抗氧化性，防止铜与空气发生反应，提升了产品稳定性。
铜基板表面镀银采用高亮电镀银工艺，LED芯片发光后经镀银层反射，提高的产品出光效率。
所述FR-4基板阻焊层形成了约0.2mm厚度的围坝，减少点胶围坝的工艺。
以上所述的具体实施方案，对本发明的目的、技术方案和有益效果进行了进一步的详细说明，所应理解的是，以上所述仅为本发明的具体实施方案而已，并非用以限定本发明的范围，任何本领域的技术人员，在不脱离本发明的构思和原则的前提下所做出的等同变化与修改，均应属于本发明保护的范围。

Claims (5)

1.一种高导热MCOB的封装方法，其特征在于，包括以下步骤：
步骤一、提供铜基板；
步骤二、在所述铜基板的表面先电镀镍层，再在镍层上电镀银层；
步骤三、在镀银层上丝网印刷油墨形成固晶区域；
步骤四、将中间为镂空的FR-4基板粘接在铜基板上，形成反射腔；
步骤五、在FR-4基板的边缘且靠近焊盘处做多次防焊处理，形成高于FR-4基板的用于围坝的台阶；
步骤六、将LED芯片通过固晶胶固定于铜基板的固晶区域上、反射腔内，LED芯片通过键合丝连接至FR-4基板上；
步骤七、在反射腔内、LED芯片上填充硅胶。
2.根据权利要求1所述的一种高导热MCOB的封装方法，其特征在于，铜基板的导热系数达383.8W/m.K。
3.根据权利要求1所述的一种高导热MCOB的封装方法，其特征在于，台阶的厚度为0.2mm。
4.根据权利要求1所述的一种高导热MCOB的封装方法，其特征在于，用于围坝的台阶环绕在固晶区域周围。
5.根据权利要求1所述的一种高导热MCOB的封装方法，其特征在于，硅胶为含有荧光粉的硅胶。
CN201610852069.6A 2016-09-26 2016-09-26 一种高导热mcob的封装方法 Pending CN106252338A (zh)

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CN110285344A (zh) * 2019-06-19 2019-09-27 厦门普为光电科技有限公司 高散热效能的灯具
CN113910793A (zh) * 2021-11-05 2022-01-11 东莞市中麒光电技术有限公司 Led显示模块制作方法及led显示模块

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Application publication date: 20161221