WO2019234562A1 - 発光装置、表示装置および電子機器 - Google Patents

発光装置、表示装置および電子機器 Download PDF

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Publication number
WO2019234562A1
WO2019234562A1 PCT/IB2019/054510 IB2019054510W WO2019234562A1 WO 2019234562 A1 WO2019234562 A1 WO 2019234562A1 IB 2019054510 W IB2019054510 W IB 2019054510W WO 2019234562 A1 WO2019234562 A1 WO 2019234562A1
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Prior art keywords
light
light emitting
emitting element
pixel
emitting device
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PCT/IB2019/054510
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English (en)
French (fr)
Japanese (ja)
Inventor
瀬尾哲史
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to KR1020207036068A priority Critical patent/KR102814688B1/ko
Priority to CN201980037662.7A priority patent/CN112219452A/zh
Priority to JP2020523843A priority patent/JPWO2019234562A1/ja
Priority to US15/734,633 priority patent/US12075642B2/en
Priority to KR1020257017359A priority patent/KR20250079071A/ko
Publication of WO2019234562A1 publication Critical patent/WO2019234562A1/ja
Anticipated expiration legal-status Critical
Priority to JP2024090202A priority patent/JP2024107045A/ja
Priority to US18/740,965 priority patent/US20240341112A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H05B33/24—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers of metallic reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • One embodiment of the present invention relates to a light-emitting element, a display module, a lighting module, a display device, a light-emitting device, an electronic device, and a lighting device.
  • a light-emitting element a display module, a lighting module, a display device, a light-emitting device, an electronic device, and a lighting device.
  • the technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method.
  • one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter).
  • the technical field of one embodiment of the present invention disclosed in this specification more specifically includes a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, A driving method or a manufacturing method thereof can be given as an example.
  • Such a light-emitting element is a self-luminous type, when used as a display pixel, it has advantages such as higher visibility than a liquid crystal element and the need for a backlight, and is suitable as a flat panel display element.
  • a display using such a light emitting element has a great advantage that it can be manufactured to be thin and light. Another feature is that the response speed is very fast.
  • the light-emitting element When the light-emitting element is used as a pixel of a full-color display, it is necessary to obtain light of at least three colors of red, green, and blue, but there are roughly two typical methods for that purpose.
  • One is a method using a light emitting element that emits light of each emission color, and the other is a method of changing the light emission to desired light for each pixel while all the light emitting elements exhibit light of the same light emission color. is there.
  • the former is advantageous in terms of light emission efficiency because of less light loss, and the latter is advantageous in terms of cost because it is easy to manufacture and increase the yield because it is not necessary to make separate light emitting elements for each pixel.
  • the desired light is typically cut by cutting a part of the light emission from the light emitting element.
  • the desired light is typically cut by cutting a part of the light emission from the light emitting element.
  • a color conversion layer using photoluminescence As a method of obtaining desired light by converting the light, a color conversion layer using photoluminescence is used.
  • the color conversion layer includes a substance that absorbs light and is excited to emit light.
  • Color conversion layers using organic compounds have existed for a long time, but in recent years, color conversion layers using quantum dots (Quantum dots, QD) have been put into practical use.
  • an object of one embodiment of the present invention is to provide a novel light-emitting device. Another object is to provide a light-emitting device or a display device with favorable display quality. Another object is to provide an electronic device having a display portion with favorable display quality.
  • the present invention should solve any one of the above-mentioned problems.
  • One embodiment of the present invention includes a first pixel having a first light-emitting element and a light-scattering layer, and a second pixel having a second light-emitting element and a first color conversion layer.
  • an emission center substance is an organic compound
  • the light scattering layer includes a first substance that scatters light emitted from the first light emitting element
  • the conversion layer includes a second substance that emits light by absorbing light emitted from the second light emitting element, and the first light emitting element and the second light emitting element are light emitting devices having a microresonance structure.
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which the microresonance structure enhances blue light.
  • another embodiment of the present invention includes a first pixel having a first light-emitting element and a light-scattering layer, and a second pixel having a second light-emitting element and a first color conversion layer.
  • the first light emitting element includes a first anode, a first cathode, a first EL layer located between the first anode and the first cathode, and the second EL element.
  • the light-emitting element includes a second anode, a second cathode, and a second EL layer positioned between the second anode and the second cathode, and the first anode and the One of the first cathodes is a reflective electrode and the other is a semi-transmissive semi-reflective electrode.
  • One of the second anode and the second cathode is a reflective electrode and the other is a semi-transmissive semi-reflective electrode.
  • the first EL layer and the second EL layer have an emission center substance, the emission center substance is an organic compound, and the light scattering layer is
  • the light emitting device includes a first substance that scatters light emitted from one light emitting element, and the first color conversion layer includes a second substance that emits light by absorbing light emitted from the second light emitting element.
  • the light-emitting device further includes a third pixel, and the third pixel includes a third light-emitting element and a second color conversion layer.
  • the third light emitting element includes a third anode, a third cathode, a third EL layer positioned between the third anode and the third cathode, and the third anode and the third light emitting element.
  • One of the third cathodes is a reflective electrode, the other is a transflective electrode, the third EL layer has an emission center material, the emission center material is an organic compound, and the second cathode
  • the color conversion layer is a light emitting device including a third substance that emits light by absorbing light emitted from the third light emitting element.
  • an optical distance between an interface of the reflective electrode on the transflective electrode side and the interface of the transflective electrode on the reflective electrode side is ⁇ . / 4 (where ⁇ is 420 nm to 480 nm).
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which a peak wavelength of light emitted from the emission center substance is 420 nm to 480 nm.
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which the emission center substance is a substance common to the first light-emitting element and the second light-emitting element.
  • Another embodiment of the present invention is a light-emitting device having the above structure in which the first substance is titanium oxide fine particles.
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which the second substance is a quantum dot.
  • Another embodiment of the present invention is a light-emitting device in which the first pixel and the second pixel emit light having different wavelengths in the above structure.
  • the light-emitting device further includes a third pixel, and the third pixel includes a third light-emitting element and a second color conversion layer.
  • the second color conversion layer includes a third material that emits light by absorbing light emitted from the third light emitting element, and the third light emitting element is a light emitting device having a microresonance structure.
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which the third substance is a quantum dot.
  • Another embodiment of the present invention is the light-emitting device having the above structure, in which the emission center substance is a substance common to the first light-emitting element, the second light-emitting element, and the third light-emitting element. .
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which the first pixel, the second pixel, and the third pixel emit light having different wavelengths.
  • directivity is applied to light emitted from the first pixel including the first light-emitting element, the second light-emitting element, the first color conversion layer, and the first color conversion layer.
  • a second pixel having means for imparting a light emission wherein the first light-emitting element and the second light-emitting element have an emission center substance of an organic compound, and the first color conversion layer includes
  • the light-emitting device includes a substance that absorbs light emitted from the second light-emitting element and emits light, and the first light-emitting element and the second light-emitting element have a microresonance structure.
  • another embodiment of the present invention includes a first pixel including a first light-emitting element, a second pixel including a second light-emitting element, and a first color conversion layer.
  • an emission center substance is an organic compound
  • the first color conversion layer includes a substance that emits light by absorbing light emitted from the second light emitting element.
  • the first color conversion layer is sandwiched between transflective layers having a reflectance of 20% or more and 80% or less with respect to light emitted from the first color conversion layer, and the first light emitting element
  • the second light emitting element is a light emitting device having a microresonance structure.
  • an optical distance of a portion sandwiched between the transflective layers is It is a light emitting device that is an integral multiple of ⁇ / 4.
  • Another embodiment of the present invention is a light-emitting device having the above structure in which the microresonance structure enhances blue light.
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which a peak wavelength of light emitted from the emission center substance is 420 nm to 480 nm.
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which the emission center substance is a substance common to the first light-emitting element and the second light-emitting element.
  • Another embodiment of the present invention is a light-emitting device having the same structure as the first light-emitting element and the second light-emitting element in the above structure.
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which the second substance is a quantum dot.
  • Another embodiment of the present invention is a light-emitting device in which the first pixel and the second pixel emit light having different wavelengths in the above structure.
  • the light-emitting device further includes a third pixel, and the third pixel includes a third light-emitting element, a second color conversion layer, and the third pixel.
  • the third light emitting element is a light emitting device having a microresonance structure.
  • the light-emitting device further includes a third pixel, and the third pixel includes a third light-emitting element and a second color conversion layer.
  • the second color conversion layer includes a third substance that emits light by absorbing light emitted from the third light emitting element, and the second color conversion layer emits from the second color conversion layer.
  • the light-emitting device is sandwiched between semi-transmissive and semi-reflective layers having a reflectance of 20% to 80% with respect to light, and the third light-emitting element has a microresonance structure.
  • the optical distance between the portions sandwiched between the semi-transmissive and semi-reflective layers is ⁇ .
  • a light emitting device that is an integral multiple of / 2.
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which the third substance is a quantum dot.
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which the emission center substance is a substance common to the first light-emitting element, the second light-emitting element, and the third light-emitting element. is there.
  • Another embodiment of the present invention is a light-emitting device having the above structure, in which the first pixel, the second pixel, and the third pixel emit light having different wavelengths.
  • Another embodiment of the present invention is an electronic device including the light-emitting device and a sensor, an operation button, a speaker, or a microphone.
  • Another embodiment of the present invention is a light-emitting device having a transistor or a substrate in the above structure.
  • Another embodiment of the present invention is a lighting device including the light-emitting device and a housing.
  • Another embodiment of the present invention is a display device including the above light-emitting device.
  • the light-emitting device in this specification includes an image display device using a light-emitting element.
  • a connector for example, an anisotropic conductive film or TCP (Tape Carrier Package) attached to a light emitting element, a module provided with a printed wiring board at the end of TCP, or a COG (Chip On Glass) method for a light emitting element.
  • a module on which an IC (integrated circuit) is directly mounted may have a light emitting device.
  • a lighting fixture or the like may include a light emitting device.
  • a novel light-emitting device can be provided.
  • a light-emitting device or a display device with favorable display quality can be provided.
  • an electronic device including a display portion with favorable display quality can be provided.
  • FIG. 1A to 1C are conceptual diagrams of a light-emitting device.
  • FIG. 2 is a conceptual diagram of a light emitting device.
  • 3A to 3D are schematic views of a light-emitting element.
  • 4A and 4B are conceptual diagrams of an active matrix light-emitting device.
  • 5A and 5B are conceptual diagrams of an active matrix light-emitting device.
  • FIG. 6 is a conceptual diagram of an active matrix light-emitting device.
  • 7A to 7C illustrate electronic devices.
  • 8A to 8C illustrate electronic devices.
  • FIG. 9 is a diagram illustrating an in-vehicle display device and a lighting device.
  • 10A and 10B each illustrate an electronic device.
  • 11A to 11C each illustrate an electronic device.
  • 12A to 12C each illustrate a circuit configuration.
  • FIGS. 13A to 13C are conceptual diagrams of light-emitting devices.
  • 14A and 14B are conceptual diagrams of a light-emitting device.
  • 15A and 15B are conceptual diagrams of an active matrix light-emitting device.
  • FIG. 16 is a conceptual diagram of an active matrix light-emitting device.
  • a light emitting device using an appropriate dopant and appropriately applying a microresonance structure can obtain blue light emission in conformity with the BT2020 standard, which is a standard capable of reproducing almost all colors in the natural world.
  • QD quantum dots
  • QD is a semiconductor nanocrystal having a size of several nm, and is composed of about 1 ⁇ 10 3 to 1 ⁇ 10 6 atoms.
  • electrons, holes, and excitons are confined in the inside thereof.
  • their energy states become discrete, and the energy shifts depending on the size. That is, even if quantum dots are composed of the same material, the emission wavelength differs depending on the size, and therefore the emission wavelength can be easily adjusted by changing the size of the QD used.
  • QD has a narrow peak width of an emission spectrum because its discreteness limits phase relaxation, and can emit light with good color purity. That is, by using a color conversion layer using QD, light emission with high color purity can be obtained, and light emission conforming to the above-described BT2020 standard can also be obtained.
  • a color conversion layer using QD like a color conversion layer using a light emitting substance of an organic compound, absorbs light emitted from a light emitting element and re-emits light of the light emitting element with a longer wavelength. It is converted to light.
  • a light-emitting device of one embodiment of the present invention includes a plurality of pixels, the pixels each having a light-emitting element, the light-emitting element having a microresonance (microcavity) structure, and the light-emitting element
  • a structure having a function of diffusing light to at least the pixel not through the color conversion layer is provided It has a configuration.
  • the structure having a function of diffusing light may be provided on an optical path through which light emitted from the light emitting element goes out of the light emitting device.
  • Light emitted from a light emitting element having a microresonance structure has strong directivity, but can be weakened by being diffused by a structure having a function of diffusing the light, and is similar to light through a color conversion layer. It can be set as the light which has a light distribution characteristic. Thereby, the viewing angle dependency can be reduced.
  • One embodiment of the present invention includes at least a first pixel having a structure (light scattering structure) having a function of scattering light with the first light-emitting element, a second light-emitting element, and a first color conversion layer.
  • the structure having the function of scattering light may be any structure as long as it can scatter light from the first light-emitting element.
  • the light emitted from the first light-emitting element is emitted from the light-emitting device. It is provided in the optical path going out. For example, it may be provided at the same place where the color conversion layer is provided, or may be provided on the sealing substrate if a sealing substrate is used. If a sealing substrate such as glass or organic resin is used, unevenness may be formed by using a sandblasting method, an etching method, or the like at a corresponding location so that light is scattered.
  • the structure having a function of scattering light may include the first substance that scatters light.
  • the first substance may be inorganic fine particles such as titanium oxide, silicon oxide, and calcium carbonate, or an organic resin in which colorless polymer fine particles such as silicone, polystyrene, and acrylic are dispersed.
  • the size (particle size) of the first substance is preferably about 1 ⁇ m to 100 ⁇ m.
  • the organic resin only needs to have a refractive index different from that of the above-described fine particles that scatter light, and is preferably a colorless and transparent resin such as an acrylic resin such as PMMA, polystyrene, or polycarbonate.
  • an acrylic resin such as PMMA
  • silicone fine particles or polystyrene fine particles can be used as the fine particles that scatter light in addition to the inorganic fine particles described above.
  • silicone fine particles or acrylic fine particles can be used as the fine particles that scatter light, in addition to the inorganic fine particles described above.
  • the first color conversion layer is a layer including a second substance that absorbs light from the second light emitting element and emits light having a different wavelength.
  • a variety of inorganic and organic light-emitting substances that exhibit photoluminescence can be used.
  • quantum dots which are inorganic materials, have a narrow emission spectrum peak width and are capable of obtaining light emission with good color purity. Since they are inorganic substances, they have excellent intrinsic stability. It is preferable for reasons such as almost 100%.
  • the color conversion layer can be formed by applying, drying, and baking a solvent in which quantum dots are dispersed. A sheet in which quantum dots are dispersed in advance has also been developed. Different colors can be applied by droplet discharge methods such as inkjet or printing methods, or by applying to the forming surface and fixing such as drying, baking, solidification, etc., and then etching using photolithography etc. You can do it.
  • Quantum dots include group 14 elements, group 15 elements, group 16 elements, compounds composed of a plurality of group 14 elements, compounds of group 4 to group 14 elements and group 16 elements, Compound of Group 2 element and Group 16 element, Compound of Group 13 element and Group 15 element, Compound of Group 13 element and Group 17 element, Compound of Group 14 element and Group 15 element And nano-sized particles such as compounds of Group 11 elements and Group 17 elements, iron oxides, titanium oxides, chalcogenide spinels, various semiconductor clusters, and metal halogen perovskites.
  • an alloy type quantum dot whose composition is represented by arbitrary ratios.
  • an alloy type quantum dot represented by CdS x Se (1-x) (x is an arbitrary number from 0 to 1) can change the emission wavelength by changing x, and thus obtains blue light emission. Is one of the effective means.
  • the structure of the quantum dot includes a core type, a core-shell type, and a core-multishell type, and any of them may be used, but the shell is covered with another inorganic material that covers the core and has a wider band gap.
  • the shell material include zinc sulfide (ZnS) and zinc oxide (ZnO).
  • the quantum dots have a high ratio of surface atoms, they are highly reactive and tend to aggregate. Therefore, it is preferable that a protective agent is attached or a protective group is provided on the surface of the quantum dots. Aggregation can be prevented and solubility in a solvent can be increased by attaching the protective agent or providing a protective group. It is also possible to reduce the reactivity and improve the electrical stability.
  • protecting agent examples include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, tripropylphosphine, tributylphosphine, trihexylphosphine, Trialkylphosphines such as octylphosphine, polyoxyethylene alkylphenyl ethers such as polyoxyethylene n-octylphenyl ether, polyoxyethylene n-nonylphenyl ether, tri (n-hexyl) amine, tri (n-octyl) Tertiary amines such as amine and tri (n-decyl) amine, tripropylphosphine oxide, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphite Organic phosphorus compounds such as oxide and tridecylphosphine oxide
  • the organic compound has an absorption spectrum peculiar to the substance.
  • the second light-emitting element preferably emits light that matches the absorption.
  • the second substance contained in the first color conversion layer is an inorganic compound, particularly QD
  • QD is a continuous absorption spectrum having a short wavelength light absorption intensity higher on the shorter wavelength side than its own emission wavelength.
  • light emission from the second light emitting element may be light emission having a light emission wavelength shorter than that of the first color conversion layer.
  • the luminescent center substance in each light-emitting element may be a common substance, so that it is not necessary to make a separate light-emitting element for each pixel, and a light-emitting device can be manufactured at a relatively low cost.
  • light emission of the light emission center substance included in the light emission element is blue light emission (the peak wavelength of light emission is about 420 nm to 480 nm. Since the relative dielectric constant of the organic compound constituting the EL layer of the light-emitting element is about 3, the emission center substance is put into a solution state in order to avoid a difference from the emission spectrum of the light-emitting element.
  • the relative dielectric constant of the solvent is preferably from 1 to 10 at room temperature, more preferably from 2 to 5.
  • the relative dielectric constant at room temperature is 2 or more and 5 or less, high solubility, and general-purpose solution.
  • toluene and chloroform are more preferable, since the light of the first light emitting element is emitted outside the light emitting device without passing through the color conversion layer in the first pixel, which is necessary for realizing a full color.
  • the microresonance structure can be formed by using a pair of electrodes of a light emitting element as one reflecting electrode and the other as a semi-reflective / semi-transmissive electrode.
  • the wavelength of the intensifying light is an integral multiple of ⁇ / 2 ( ⁇ is the optical distance between the interface of the reflective electrode on the transflective electrode side and the interface of the transflective electrode on the reflective electrode side). It can be adjusted by forming an EL layer or an optical path length adjusting layer (such as a transparent electrode) so as to be equivalent to the wavelength and in units (nm).
  • the light-emitting element of one embodiment of the present invention may include a third pixel or more pixels.
  • the third pixel has a third light emitting element and a second color conversion layer, and is a pixel that exhibits light having a wavelength different from that of the first pixel and the second pixel.
  • the second color conversion layer has the same configuration as the first color conversion layer except for the color to emit light
  • the third light emitting element has the same configuration as the second light emitting element. I want.
  • FIG. 2 shows a conceptual diagram of a conventional light emitting device.
  • a pixel that exhibits light of three colors of blue, green, and red is shown.
  • Reference numeral 208B denotes a first pixel that emits blue light.
  • the first pixel 208B includes a first electrode 201B and a second electrode 203, one of which is a reflective electrode, the other is a transflective electrode, and one of which is an anode. The other is the cathode.
  • a second pixel 208G that emits green light and a third pixel 208R that emits red light are illustrated, and the first electrode 201G, the second electrode 203, and the first electrode are respectively illustrated.
  • FIG. 2 illustrates a configuration in which the first electrodes 201B, 201G, and 201R are a reflective electrode and an anode, and the second electrode 203 is a transflective electrode.
  • the first electrodes 201B to 201R are formed over the insulator 200.
  • a black matrix 206 is provided between the pixels in order to prevent light from being mixed with adjacent pixels.
  • the black matrix 206 may also serve as a bank when the color conversion layer is formed by an inkjet method or the like.
  • the EL layer 202 is sandwiched between the first electrodes 201B, 201G, and 201R and the second electrode 203 in the first pixel 208B to the third pixel 208R.
  • the EL layer 202 may be common to the first pixel 208B to the third pixel 208R or may be separated, it is easier to manufacture and advantageous in terms of cost if they are common to a plurality of pixels.
  • the EL layer 202 is generally composed of a plurality of layers separated in function, but a part is shared by a plurality of pixels, and a part may be independent for each pixel.
  • the first pixel 208B to the third pixel 208R include a first light-emitting element 207B to a third light-emitting element 207R each including a first electrode, a second electrode, and an EL layer. Note that FIG. 2 illustrates a structure in which the first pixel 208B to the third pixel 208R include the common EL layer 202.
  • Each of the first light-emitting element 207B to the third light-emitting element 207R has a microresonance structure because one of the first electrode and the second electrode is a reflective electrode and the other is a semi-transmissive / semi-reflective electrode. It is a light emitting element.
  • the wavelength that can be resonated is determined by the optical distance 209 between the surface of the reflective electrode and the surface of the transflective electrode in the light emitting element. By setting this distance to an integral multiple of ⁇ / 2, where ⁇ is the wavelength to be resonated, light of wavelength ⁇ can be amplified.
  • the optical distance 209 can be adjusted by a hole injection layer of the EL layer, a hole transport layer, a transparent electrode layer formed on the reflective electrode as a part of the first electrode, or the like.
  • the EL layer is common to the first light-emitting element 207B to the third light-emitting element 207R, and the light emission center material is also the same. Therefore, the optical distance 209 of the light-emitting element is the first pixel. Since it is common to the 208B to the third pixel 208R, it can be easily formed. Note that in the case where the EL layer 202 is separately formed for each pixel, the optical distance 209 may be adjusted in accordance with light from the EL layer.
  • Reference numeral 204 denotes a layer provided over the second layer 203, which is a protective layer for protecting the first light-emitting element 207B to the third light-emitting element 207R from substances that adversely affect the environment and the oxide, nitride, Fluorides, sulfides, ternary compounds, metals or polymers can be used, such as aluminum oxide, hafnium oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, Materials containing niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide or indium oxide, aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, Molybdenum nitride, zirconium
  • the color conversion layer 205G is a color conversion layer.
  • the color conversion layer 205G contains a second substance that emits light by absorbing light of the second light emitting element 207G. Light emitted from the second light-emitting element 207G enters the first color conversion layer 205G, is converted into light having a long wavelength, and is emitted.
  • 205R is also a color conversion layer, and the color conversion layer 205R contains a third substance that absorbs light from the third light emitting element 207R and emits light. Light emitted from the third light emitting element 207R is incident on the second color conversion layer 205R, converted into light having a long wavelength, and emitted.
  • the first pixel 208B emits light that does not pass through the color conversion layer, and thus is preferably a pixel that emits blue light having the highest energy among the three primary colors of light.
  • blue light emission is preferable.
  • the luminescent center materials contained in these light emitting elements are the same material, but different luminescent center materials may be used.
  • the light emission becomes light having directivity in a direction perpendicular to the electrodes.
  • the first pixel 208B emits light having directivity because the light comes out of the light emitting device as it is.
  • the second pixel 208G and the third pixel 208R the light from the second light-emitting element 207G and the third light-emitting element 207R once passes through the first color conversion layer 205G and the second color conversion layer 205R. Therefore, the light from these pixels does not have directivity. That is, light emission with strong directivity and light emission with little directivity coexist in a pixel included in the same light-emitting device.
  • the display performance is remarkably deteriorated depending on the viewing angle.
  • the orientation characteristics are different for each color, there is a possibility that the color may be completely different depending on the viewing angle.
  • the structure 205B having a function of scattering light emitted from the first light-emitting element 207B is provided in the first pixel 208B. It was.
  • a structure 205B having a function of scattering light emitted from the first light-emitting element 207B includes a first substance that scatters light emitted from the first light-emitting element as shown in FIGS. 1A and 1B. Even a layer may have a structure that scatters light emitted from the first light-emitting element as shown in FIG.
  • FIG. 13A to 13C show a modification.
  • FIG. 13A includes a layer 215B that also functions as a blue color filter, instead of the structure 205B that has a function of scattering light in FIG.
  • FIGS. 13B and 13C show an embodiment in which both the structure 205B having a function of scattering light and the blue color filter 225B are included.
  • the blue color filter 225B may be formed in contact with the structure 205B having a function of scattering light as illustrated in FIGS. 13B and 13C, but may be formed over another structure such as a sealing substrate. It may be formed.
  • the light emitting device further improves color purity while scattering light having directivity.
  • reflection of external light can be suppressed, better display can be obtained.
  • Light from the first pixel 208B can be light with low directivity by emitting light from the first light-emitting element 207B through the structure 205B and the layer 215B. Thereby, the difference in the alignment characteristics depending on the colors is alleviated, and a light emitting device with high display quality can be obtained.
  • the light-emitting device of one embodiment of the present invention can be a light-emitting device with favorable display quality.
  • a light-emitting device of one embodiment of the present invention includes a plurality of pixels, the pixels each having a light-emitting element, the light-emitting element having a microresonance (microcavity) structure, and the light-emitting element
  • a micro-resonance structure is provided by providing a transflective layer so as to sandwich the color conversion layer Form.
  • the light emitted from the color conversion layer has the same directivity as the light emitting element, and the light that passes through the color conversion layer and the light that does not pass through the same It can be set as the light which has the light distribution characteristic. Thereby, the viewing angle dependency can be reduced.
  • directivity is imparted to at least a first pixel including a first light-emitting element, a second light-emitting element, a first color conversion layer, and light emitted from the first color conversion layer. And a second pixel having means for performing the same.
  • the means for imparting directivity to the light emitted from the first color conversion layer may be anything as long as it can impart directivity to the light emitted from the first color conversion layer. It is preferable to form a transflective layer so as to sandwich the color conversion layer.
  • the transflective layer may be a layer having a visible light reflectance of 20% to 80%, preferably 40% to 70%.
  • an electrode on a light transmitting side of the light emitting element may be used also as the transflective layer.
  • a dielectric multilayer film may be used as the transflective layer.
  • the dielectric multilayer film is obtained by alternately laminating two types of dielectric films having different refractive indexes, and is designed so that the optical film thickness of each dielectric film becomes 1/4 of the desired emission wavelength. Thereby, the reflectance of a desired light emission wavelength can be improved and directivity can be provided to light.
  • an alternating stacked film of a film having a low refractive index such as silicon oxide or magnesium fluoride and a film having a high refractive index such as tantalum oxide, titanium oxide, or hafnium oxide
  • a film having a low refractive index such as silicon oxide or magnesium fluoride
  • a film having a high refractive index such as tantalum oxide, titanium
  • the first color conversion layer has the same configuration as that of the first color conversion layer described in the first embodiment, and thus the repeated description is omitted.
  • the light emission of the light emission center material of the light emission element is blue light emission (the peak wavelength of light emission is about 420 nm to 480 nm.
  • the light emission of the light emission center substance is calculated by a PL spectrum in a solution state) Since the relative dielectric constant of the organic compound constituting the EL layer of the light-emitting element is about 3, the ratio of the solvent for bringing the emission center substance into a solution state for the purpose of avoiding a difference from the emission spectrum of the light-emitting element.
  • the dielectric constant is preferably 1 or more and 10 or less at room temperature, more preferably 2 or more and 5 or less, specifically, hexane, benzene, toluene, diethyl ether, ethyl acetate, chloroform, chlorobenzene, or dichloromethane.
  • the relative permittivity at room temperature is 2 or more and 5 or less, the solubility is high, and a general-purpose solvent is more preferable. For example, it is preferable toluene or chloroform is more preferable.).
  • the first pixel since the light of the first light emitting element is emitted outside the light emitting device without passing through the color conversion layer, blue having the highest energy among the three colors of light necessary for realizing full color. Light emission is a preferable structure with little loss.
  • the microresonance structure included in the light-emitting element has a configuration that intensifies blue light, a light-emitting device with favorable color purity and high efficiency can be obtained.
  • the microresonance structure of the light emitting element can be formed by using one pair of electrodes of the light emitting element as a reflective electrode and the other as a semi-reflective / semi-transmissive electrode.
  • the adjustment of the wavelength of the intensifying light is such that the optical distance between the transflective electrode side interface of the reflective electrode and the reflective electrode side interface of the transflective electrode is an integral multiple of ⁇ / 2 ( ⁇ is An EL layer or an optical path length adjustment layer (a transparent electrode or the like) may be formed so as to be equivalent to the wavelength of light (unit (nm)).
  • the transflective electrode of the light emitting element may be used as one of the transflective layers that sandwich the color conversion layer.
  • the light-emitting element of one embodiment of the present invention may include a third pixel or more pixels.
  • the third pixel has a third light emitting element and a second color conversion layer, and is a pixel that exhibits light having a wavelength different from that of the first pixel and the second pixel. Since the second color conversion layer has the same configuration as the first color conversion layer except for the color to emit light, and the third light emitting element has the same configuration as the second light emitting element, see above. I want.
  • FIG. 2 shows a conceptual diagram of a conventional light emitting device.
  • a pixel that exhibits light of three colors of blue, green, and red is shown.
  • Reference numeral 208B denotes a first pixel that emits blue light.
  • the first pixel 208B includes a first electrode 201B and a second electrode 203, one of which is a reflective electrode, the other is a transflective electrode, and one of which is an anode. The other is the cathode.
  • a second pixel 208G that emits green light and a third pixel 208R that emits red light are illustrated, and the first electrode 201G, the second electrode 203, and the first electrode are respectively illustrated.
  • FIG. 2 illustrates a configuration in which the first electrodes 201B, 201G, and 201R are a reflective electrode and an anode, and the second electrode 203 is a transflective electrode.
  • the first electrodes 201B to 201R are formed over the insulator 200.
  • a black matrix 206 is provided between the pixels in order to prevent light from being mixed with adjacent pixels.
  • the black matrix 206 may also serve as a bank when the color conversion layer is formed by an inkjet method or the like.
  • the EL layer 202 is sandwiched between the first electrodes 201B, 201G, and 201R and the second electrode 203 in the first pixel 208B to the third pixel 208R.
  • the EL layer 202 may be common to the first pixel 208B to the third pixel 208R or may be separated, it is easier to manufacture and advantageous in terms of cost if they are common to a plurality of pixels.
  • the EL layer 202 is generally composed of a plurality of layers separated in function, but a part is shared by a plurality of pixels, and a part may be independent for each pixel.
  • the first pixel 208B to the third pixel 208R include a first light-emitting element 207B to a third light-emitting element 207R each including a first electrode, a second electrode, and an EL layer. Note that FIG. 2 illustrates a structure in which the first pixel 208B to the third pixel 208R include the common EL layer 202.
  • Each of the first light-emitting element 207B to the third light-emitting element 207R has a microresonance structure because one of the first electrode and the second electrode is a reflective electrode and the other is a semi-transmissive / semi-reflective electrode. It is a light emitting element.
  • the wavelength that can be resonated is determined by the optical distance 209 between the surface of the reflective electrode and the surface of the transflective electrode in the light emitting element. By setting this distance to an integral multiple of ⁇ / 2, where ⁇ is the wavelength to be resonated, light of wavelength ⁇ can be amplified.
  • the optical distance 209 can be adjusted by a hole injection layer of the EL layer, a hole transport layer, a transparent electrode layer formed on the reflective electrode as a part of the first electrode, or the like.
  • the EL layer is common to the first light-emitting element 207B to the third light-emitting element 207R, and the light emission center material is also the same. Therefore, the optical distance 209 of the light-emitting element is the first pixel. Since it is common to the 208B to the third pixel 208R, it can be easily formed. Note that in the case where the EL layer 202 is separately formed for each pixel, the optical distance 209 may be adjusted in accordance with light from the EL layer.
  • Reference numeral 204 denotes a layer provided over the second layer 203, which is a protective layer for protecting the first light-emitting element 207B to the third light-emitting element 207R from substances that adversely affect the environment and the oxide, nitride, Fluorides, sulfides, ternary compounds, metals or polymers can be used, such as aluminum oxide, hafnium oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, Materials containing niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide or indium oxide, aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, Molybdenum nitride, zirconium
  • the color conversion layer 205G is a color conversion layer.
  • the color conversion layer 205G contains a second substance that emits light by absorbing light of the second light emitting element 207G. Light emitted from the second light-emitting element 207G enters the first color conversion layer 205G, is converted into light having a long wavelength, and is emitted.
  • 205R is also a color conversion layer, and the color conversion layer 205R contains a third substance that absorbs light from the third light emitting element 207R and emits light. Light emitted from the third light emitting element 207R is incident on the second color conversion layer 205R, converted into light having a long wavelength, and emitted.
  • the first pixel 208B emits light that does not pass through the color conversion layer, and thus is preferably a pixel that emits blue light having the highest energy among the three primary colors of light.
  • blue light emission is preferable.
  • the luminescent center materials contained in these light emitting elements are the same material, but different luminescent center materials may be used.
  • the light emission becomes light having directivity in a direction perpendicular to the electrodes.
  • the first pixel 208B emits light having directivity because the light comes out of the light emitting device as it is.
  • the second pixel 208G and the third pixel 208R the light from the second light-emitting element 207G and the third light-emitting element 207R once passes through the first color conversion layer 205G and the second color conversion layer 205R. Therefore, the light from these pixels does not have directivity. That is, light emission with strong directivity and light emission with little directivity coexist in a pixel included in the same light-emitting device.
  • the display performance is remarkably deteriorated depending on the viewing angle.
  • the orientation characteristics are different for each color, there is a possibility that the color may be completely different depending on the viewing angle.
  • a unit that imparts directivity to light emitted from the first color conversion layer is provided. Any means for imparting directivity to the light emitted from the first color conversion layer may be used. For example, if a semi-transparent semi-reflective layer is formed so as to sandwich the color conversion layer, and a microresonance structure is formed. good. 14A shows an embodiment in which semi-transmissive and semi-reflective layers are formed above and below the color conversion layer, and FIG. 14B shows a semi-transmissive and semi-reflective film on the light-emitting element side of the color conversion layer. This is an aspect also used as an electrode (semi-transmissive / semi-reflective electrode).
  • Light from the second pixel 208G and the third pixel 208R can be made highly directional light by providing means 210G and 210R for imparting directivity to the light emitted from the color conversion layer. As a result, the difference in orientation characteristics depending on colors is alleviated, and a light emitting device with high display quality can be obtained.
  • the light-emitting device of one embodiment of the present invention can be a light-emitting device with favorable display quality.
  • the light-emitting element in this embodiment includes a pair of electrodes including a first electrode 101 and a second electrode 102, and an EL layer 103 provided between the first electrode 101 and the second electrode 102. It consists of and.
  • the electrode provided on the formation substrate side is described as the first electrode 101.
  • the light-emitting device of one embodiment of the present invention includes a light-emitting element having a microresonance structure.
  • a light emitting element having a microresonance structure is obtained by forming a pair of electrodes of a light emitting element from a reflective electrode and a semi-transmissive / semi-reflective electrode.
  • the reflective electrode and the semi-transmissive / semi-reflective electrode correspond to the first electrode 101 and the second electrode 102 described above.
  • At least an EL layer is provided between the reflective electrode and the semi-transmissive / semi-reflective electrode, and the EL layer has at least a light-emitting layer serving as a light-emitting region. Note that one of the first electrode 101 and the second electrode 102 functions as an anode, and the other functions as a cathode.
  • a light emitting device having a microresonance structure In a light emitting device having a microresonance structure, light emitted in all directions from a light emitting layer included in an EL layer is reflected by a reflective electrode and a semi-transmissive / semi-reflective electrode, and resonates to emit light of a certain wavelength. Amplified, and the light becomes directional light.
  • the reflective electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%, and a resistivity of 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the material for forming the reflective electrode include aluminum (Al) or an alloy containing Al.
  • the alloy containing Al include an alloy containing Al and L (L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni), and lanthanum (La)).
  • Aluminum has a low resistance value and a high light reflectance. In addition, since aluminum is abundant in the crust and inexpensive, manufacturing cost of a light-emitting element by using aluminum can be reduced.
  • N is yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In) Represents one or more of tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), or gold (Au) ) And the like.
  • the alloy containing silver include an alloy containing silver, palladium and copper, an alloy containing silver and copper, an alloy containing silver and magnesium, an alloy containing silver and nickel, an alloy containing silver and gold, and silver and ytterbium. Examples thereof include alloys.
  • transition metals such as tungsten, chromium (Cr), molybdenum (Mo), copper, and titanium can be used.
  • a transparent electrode layer is formed as an optical path length adjusting layer with a light-transmitting conductive material between the reflective electrode and the EL layer 103, and the first electrode 101 may be formed by two layers of the reflective electrode and the transparent electrode. it can.
  • the optical path length (cavity length) of the microresonance structure can be adjusted.
  • the light-transmitting conductive material examples include indium tin oxide (Indium Tin Oxide, hereinafter referred to as ITO), indium tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium zinc oxide (Indium Zinc Oxide), Examples thereof include metal oxides such as indium oxide-tin oxide containing titanium, indium-titanium oxide, tungsten oxide, and indium oxide containing zinc oxide.
  • ITO Indium Tin Oxide
  • ITSO indium tin oxide containing silicon or silicon oxide
  • ITSO indium zinc oxide
  • metal oxides such as indium oxide-tin oxide containing titanium, indium-titanium oxide, tungsten oxide, and indium oxide containing zinc oxide.
  • the first electrode 101 is composed of the reflective electrode 101-1 and the transparent electrode 101-2.
  • the transflective electrode has a visible light reflectance of 20% to 80%, preferably 40% to 70%, and a resistivity of 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the semi-transmissive / semi-reflective electrode can be formed using one or more kinds of conductive metals, alloys, conductive compounds, and the like. Specifically, for example, indium tin oxide (hereinafter referred to as ITO), indium tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium zinc oxide (indium zinc oxide), or titanium is included.
  • ITO indium tin oxide
  • ITSO indium tin oxide containing silicon or silicon oxide
  • ITSO indium zinc oxide
  • titanium titanium
  • Metal oxides such as indium oxide containing indium oxide-tin oxide, indium-titanium oxide, tungsten oxide, and zinc oxide can be used.
  • a metal thin film with a thickness that allows light to pass therethrough (preferably, a thickness of 1 nm to 30 nm) can be used.
  • the metal for example, Ag or an alloy such as Ag and Al, Ag and Mg, Ag and Au, Ag and Yb, or the like can be used.
  • the reflective electrode and the semi-transmissive / semi-reflective electrode may be either the first electrode 101 or the second electrode 102. Moreover, either an anode or a cathode may be used.
  • FIG. 3A illustrates the case where the first electrode 101 is on the manufacturing substrate side as described above. Therefore, when the reflective electrode is the first electrode, the light-emitting element has a top emission structure. When the reflective electrode is the second electrode 102, a bottom emission structure is formed. Note that the first electrode 101 and the second electrode 102 may be an anode or a cathode, but FIG. 3A illustrates the case where the first electrode 101 is an anode.
  • the light extraction efficiency can be improved by providing the organic cap layer 104 on a surface opposite to the surface in contact with the EL layer 103 of the second electrode 102.
  • the organic cap layer 104 by providing the organic cap layer 104 so as to be in contact with the electrode 102, a difference in refractive index between the electrode 102 and the air interface can be reduced, so that light extraction efficiency can be improved.
  • the film thickness is preferably 5 nm to 120 nm. More preferably, it is 30 nm or more and 90 nm or less.
  • the organic cap layer 104 is preferably an organic compound layer having a molecular weight of 300 to 1200.
  • the organic material is preferably a conductive organic material.
  • the second electrode 102 is a semi-transmissive / semi-reflective electrode, and it is necessary to reduce the film thickness in order to maintain a certain degree of translucency.
  • the conductivity may be deteriorated.
  • a conductive material for the organic cap layer 104 it is possible to secure the conductivity and improve the yield of manufacturing the light emitting element while improving the light extraction efficiency.
  • an organic compound with little absorption in the visible light region can be preferably used.
  • the organic compound used for the EL layer 103 can also be used as the organic cap layer 104. In this case, the organic cap layer 104 can be easily formed because the organic cap layer 104 can be formed in the film formation apparatus or the film formation chamber in which the EL layer 103 is formed.
  • the light-emitting element is an optical element between the reflective electrode and the semi-transmissive / semi-reflective electrode by changing the thickness of the transparent electrode provided in contact with the reflective electrode and the thickness of the carrier transport layer such as the hole injection layer and the hole transport layer.
  • the distance (cavity length) can be changed.
  • FIG. 3A illustrates an example in which the optical path length is adjusted by the transparent electrode 101-2 that is a part of the first electrode 101, the optical path is formed by the hole injection layer 111 as illustrated in FIG.
  • the length may be adjusted, may be adjusted by the hole transport layer 112, or two or more of these may be used in combination.
  • the optical distance (optical path length) between the EL layer side interface of the reflective electrode and the EL layer side interface of the semi-transmissive / semi-reflective electrode is the wavelength to be amplified. If ⁇ nm, it is preferably an integer multiple of ⁇ / 2.
  • the light reflected by the reflective electrode and returned has a large interference with the light directly incident on the semi-transmissive / semi-reflective electrode from the light emitting layer (first incident light). Therefore, it is preferable to adjust the optical distance between the reflective electrode and the light emitting layer to (2n-1) ⁇ / 4 (where n is a natural number of 1 or more and ⁇ is the wavelength of light emission to be amplified). By adjusting the optical distance, the phase of the first reflected light and the first incident light can be matched to further amplify the light emission from the light emitting layer.
  • the EL layer 103 preferably has a laminated structure, but the laminated structure is not particularly limited, and a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a carrier block layer, an exciton Various layer structures such as a block layer and a charge generation layer can be applied.
  • the hole injection layer 111 in addition to the hole injection layer 111, the hole transport layer 112, and the light emitting layer 113, there are two kinds of configurations including an electron transport layer 114, an electron injection layer 115, and a charge generation layer 116. Will be described. The materials constituting each layer are specifically shown below.
  • the hole injection layer 111 is a layer containing a substance having an acceptor property.
  • a substance having an acceptor property any of an organic compound and an inorganic compound can be used.
  • a compound having an electron withdrawing group (halogen group or cyano group) can be used, and 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane.
  • F4-TCNQ 4,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane
  • HAT-CN 2,3,6,7,10,11-hexacyano-1,4 , 5,8,9,12-hexaazatriphenylene
  • F6-TCNNQ 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane
  • a compound having an electron-withdrawing group can be used.
  • the organic compound having acceptor properties a compound in which an electron withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms such as HAT-CN is preferable because it is thermally stable.
  • Radialene derivatives having an electron-withdrawing group are preferable because of their very high electron-accepting properties.
  • ⁇ , ⁇ ′, ⁇ ′′ 1,2,3-cyclopropanetriylidenetris [4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], ⁇ , ⁇ ′, ⁇ ′′ -1,2,3-cyclopropanetriylidenetris [2,6-dichloro-3,5-difluoro-4- (trifluoromethyl) benzeneacetonitrile], ⁇ , ⁇ ′, ⁇ ′′ -1,2,3-cyclopropanetriylidentris [2,3,4 , 5,6-pentafluorobenzeneacetonitrile] and the like.
  • molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used as the acceptor substance.
  • phthalocyanine-based complex compounds such as phthalocyanine (abbreviation: H 2 Pc) and copper phthalocyanine (CuPC), 4,4′-bis [N- (4-diphenylaminophenyl) -N-phenylamino] biphenyl (abbreviation) : DPAB), N, N′-bis ⁇ 4- [bis (3-methylphenyl) amino] phenyl ⁇ -N, N′-diphenyl- (1,1′-biphenyl) -4,4′-diamine (abbreviation) :
  • the hole injection layer 111 is also formed by an aromatic amine compound such as DNTPD) or a polymer such as poly (3,4-ethylenedioxythiophene) / poly (styrenesulf
  • a composite material in which an acceptor substance is contained in a substance having a hole-transport property can be used for the hole-injecting layer 111.
  • a material for forming an electrode can be selected regardless of a work function. That is, not only a material with a high work function but also a material with a low work function can be used for the first electrode 101.
  • acceptor substance 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 1,3,4,5,7,
  • F4-TCNQ 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane
  • chloranil 1,3,4,5,7
  • An organic compound having an acceptor property such as 8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ) and a transition metal oxide
  • F6-TCNNQ 8-hexafluorotetracyano-naphthoquinodimethane
  • a transition metal oxide an oxide of a metal belonging to Groups 4 to 8 in the periodic table can be used.
  • vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, and the like have high electron-accepting properties. Therefore, it is preferable.
  • molybdenum oxide is especially preferable because it is stable in the air, has a low hygroscopic property, and is easy to handle.
  • the hole-transporting substance used for the composite material various organic compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and high molecular compounds (oligomers, dendrimers, polymers, and the like) can be used.
  • the hole-transporting substance used for the composite material is preferably a substance having a hole mobility of 10 ⁇ 6 cm 2 / Vs or higher.
  • organic compounds that can be used as the hole transporting substance in the composite material are specifically listed.
  • N, N′-di (p-tolyl) -N, N′-diphenyl-p-phenylenediamine abbreviation: DTDPPA
  • 4,4′-bis [ N- (4-diphenylaminophenyl) -N-phenylamino] biphenyl abbreviation: DPAB
  • N, N′-bis ⁇ 4- [bis (3-methylphenyl) amino] phenyl ⁇ -N, N′-diphenyl -(1,1′-biphenyl) -4,4′-diamine abbreviation: DNTPD
  • DPA3B 1,3-bis- (4-bis (4-methyl-phenyl) -amino-phenyl) -cyclohexane
  • carbazole derivative examples include 3- [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis [N— (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- (1-naphthyl) -N- (9-phenylcarbazol-3-yl) Amino] -9-phenylcarbazole (abbreviation: PCzPCN1), 4,4′-di (N-carbazolyl) biphenyl (abbreviation: CBP), 1,3,5-tris [4- (N-carbazolyl) phenyl] benzene ( Abbreviation: TCPB), 9- [4- (10-phenylanthracen-9-yl) phenyl]
  • aromatic hydrocarbon examples include 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di (1-naphthyl).
  • pentacene, coronene, and the like can also be used. It may have a vinyl skeleton.
  • aromatic hydrocarbon having a vinyl group for example, 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), 9,10-bis [4- (2,2- Diphenylvinyl) phenyl] anthracene (abbreviation: DPVPA) and the like.
  • DPVBi 4,4′-bis (2,2-diphenylvinyl) biphenyl
  • DPVPA 9,10-bis [4- (2,2- Diphenylvinyl) phenyl] anthracene
  • poly (N-vinylcarbazole) (abbreviation: PVK), poly (4-vinyltriphenylamine) (abbreviation: PVTPA), poly [N- (4- ⁇ N ′-[4- (4-diphenylamino)] Phenyl] phenyl-N′-phenylamino ⁇ phenyl) methacrylamide] (abbreviation: PTPDMA), poly [N, N′-bis (4-butylphenyl) -N, N′-bis (phenyl) benzidine] (abbreviation: Polymer compounds such as Poly-TPD can also be used.
  • the hole injecting layer 111 By forming the hole injecting layer 111, the hole injecting property is improved and a light emitting element with a low driving voltage can be obtained.
  • An organic compound having an acceptor property is an easy-to-use material because it can be easily deposited and easily formed into a film.
  • the composite material has good conductivity. Therefore, even if it is formed as a thick film, the drive voltage is hardly deteriorated, and the cavity length in the microcavity structure is adjusted. It is very suitable as a layer to perform.
  • the hole transport layer 112 is formed including a material having a hole transport property.
  • the material having a hole transporting property preferably has a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 / Vs or more.
  • the hole-transport layer 112 preferably contains the organic compound of one embodiment of the present invention.
  • Examples of the material having a hole transporting property include 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), N, N′-bis (3-methylphenyl).
  • the light emitting layer 113 is a layer containing a host material and a light emitting material.
  • the light emitting material may be a fluorescent light emitting material, a phosphorescent light emitting material, a material exhibiting thermally activated delayed fluorescence (TADF), or another light emitting material. Moreover, even if it is a single layer, it may consist of a plurality of layers containing different light emitting materials.
  • Examples of materials that can be used as the fluorescent light-emitting substance in the light-emitting layer 113 include the following. Other fluorescent materials can also be used.
  • condensed aromatic diamine compounds typified by pyrenediamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferable because they have high hole trapping properties and are excellent in luminous efficiency and reliability.
  • Examples of materials that can be used as the phosphorescent material in the light-emitting layer 113 include the following.
  • a rare earth metal complex such as tris (acetylacetonato) (monophenanthroline) terbium (III) (abbreviation: [Tb (acac) 3 (Phen)]) can be given. These are compounds that mainly emit green phosphorescence, and have an emission peak at 500 nm to 600 nm. Note that an organometallic iridium complex having a pyrimidine skeleton is particularly preferable because of its outstanding reliability and luminous efficiency.
  • a known phosphorescent light emitting material may be selected and used.
  • TADF material fullerene and its derivatives, acridine and its derivatives, eosin derivatives and the like can be used.
  • metal-containing porphyrins including magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), and the like can be given.
  • the metal-containing porphyrin include a protoporphyrin-tin fluoride complex (SnF 2 (Proto IX)), a mesoporphyrin-tin fluoride complex (SnF 2 (Meso IX)) represented by the following structural formula, and hematoporphyrin.
  • the heterocyclic compound has a ⁇ -electron rich heteroaromatic ring and a ⁇ -electron deficient heteroaromatic ring, both the electron transport property and the hole transport property are high, which is preferable.
  • a substance in which a ⁇ -electron rich heteroaromatic ring and a ⁇ -electron deficient heteroaromatic ring are directly bonded increases both the donor property of the ⁇ -electron rich heteroaromatic ring and the acceptor property of the ⁇ -electron deficient heteroaromatic ring. Since the energy difference between the S 1 level and the T 1 level is small, it is particularly preferable because thermally activated delayed fluorescence can be obtained efficiently.
  • an aromatic ring to which an electron withdrawing group such as a cyano group is bonded may be used.
  • various carrier transport materials such as a material having an electron transport property and a material having a hole transport property can be used.
  • the substances mentioned as the material having a hole transporting property contained in the hole transporting layer 112 can be preferably used.
  • bis (10-hydroxybenzo [h] quinolinato) beryllium (II) (abbreviation: BeBq 2 ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) Aluminum (III) (abbreviation: BAlq), bis (8-quinolinolato) zinc (II) (abbreviation: Znq), bis [2- (2-benzoxazolyl) phenolato] zinc (II) (abbreviation: ZnPBO), Metal complexes such as bis [2- (2-benzothiazolyl) phenolato] zinc (II) (abbreviation: ZnBTZ), 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4 -Oxadiazole (abbreviation: PBD), 3- (4-biphenylyl) -4-phenyl-5- (4-tert-butylpheny
  • a heterocyclic compound having a diazine skeleton and a heterocyclic compound having a pyridine skeleton are preferable because of their good reliability.
  • a heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has a high electron transporting property and contributes to a reduction in driving voltage.
  • a material having an anthracene skeleton is preferable as the host material.
  • a substance having an anthracene skeleton is used as a host material for a fluorescent light-emitting substance, a light-emitting layer with favorable emission efficiency and durability can be realized. Since many materials having an anthracene skeleton have a deep HOMO level, one embodiment of the present invention can be favorably applied.
  • a substance having an anthracene skeleton used as a host material a diphenylanthracene skeleton, particularly a substance having a 9,10-diphenylanthracene skeleton, is preferable because it is chemically stable.
  • the host material has a carbazole skeleton because hole injection / transport properties are improved.
  • the host material includes a benzocarbazole skeleton in which a benzene ring is further condensed to carbazole, the HOMO is shallower by about 0.1 eV than carbazole.
  • the host material includes a dibenzocarbazole skeleton, HOMO is shallower than carbazole by about 0.1 eV, which facilitates the entrance of holes, and also has excellent hole transportability and high heat resistance. .
  • a substance having a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton) at the same time is more preferable as a host material.
  • a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.
  • Examples of such a substance include 9-phenyl-3- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: PCzPA), 3- [4- (1-naphthyl)- Phenyl] -9-phenyl-9H-carbazole (abbreviation: PCPN), 9- [4- (10-phenyl-9-anthracenyl) phenyl] -9H-carbazole (abbreviation: CzPA), 7- [4- (10- Phenyl-9-anthryl) phenyl] -7H-dibenzo [c, g] carbazole (abbreviation: cgDBCzPA), 6- [3- (9,10-diphenyl-2-anthryl) phenyl] -benzo [b] naphtho [1 , 2-d] furan (abbreviation: 2 mBnfPPA), 9-phenyl-10-
  • the host material may be a material in which a plurality of types of substances are mixed.
  • a mixed host material it is preferable to mix a material having an electron transporting property and a material having a hole transporting property. .
  • the exciplex selects a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting material, energy transfer becomes smooth and light can be emitted efficiently. preferable. Further, it is preferable to use the structure because the driving voltage is also reduced.
  • a top emission element emits light from the cathode side.
  • the light-emitting layer is formed from the anode side on the hole transport layer, but when different substances are stacked, the molecular orientation may be disturbed due to the interaction between the substances. Since the disorder of the molecular orientation becomes smaller as the same substance is laminated, it is considered that the orientation of the light-emitting layer becomes closer as it approaches the cathode.
  • the molecular orientation is disturbed, the direction of the emitted light is also disturbed, so that the amount of light extracted is reduced.
  • the most disordered part of the light emitting layer is present at a position closest to the electrode on the light extraction side.
  • the most oriented element in the light emitting layer is present. Since the aligned portions are present at positions close to the electrode on the light extraction side, the alignment direction of the light emitted from the light emitting layer is aligned, and the light extraction efficiency is improved, so that the external quantum efficiency can be increased.
  • the electron transport layer 114 is a layer containing a substance having an electron transport property.
  • the substance having an electron transporting property those exemplified as the substance having an electron transporting property that can be used for the host material can be used.
  • an alkali metal or an alkali such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF 2 ), or the like is used as the electron injection layer 115.
  • a layer containing an earth metal or a compound thereof may be provided.
  • the electron injecting layer 115 a layer made of a substance having an electron transporting property, an alkali metal, an alkaline earth metal, or a compound thereof, or electride may be used. Examples of the electride include a substance obtained by adding a high concentration of electrons to a mixed oxide of calcium and aluminum.
  • a substance having an electron-transport property includes the above alkali metal or alkaline earth metal fluoride in a concentration or higher (50 wt% or more) in a microcrystalline state. It is also possible to use a stripped layer. Since the layer is a layer having a low refractive index, a light-emitting element with better external quantum efficiency can be provided.
  • a charge generation layer 116 may be provided instead of the electron injection layer 115 (FIG. 3B).
  • the charge generation layer 116 is a layer that can inject holes into a layer in contact with the cathode side of the layer and inject electrons into a layer in contact with the anode side by applying a potential.
  • the charge generation layer 116 includes at least a P-type layer 117.
  • the P-type layer 117 is preferably formed using the composite material mentioned as the material that can form the hole injection layer 111 described above. Further, the P-type layer 117 may be formed by stacking the above-described film containing an acceptor material and a film containing a hole transport material as a material constituting the composite material.
  • the organic compound of one embodiment of the present invention is an organic compound having a low refractive index, a light-emitting element with favorable external quantum efficiency can be obtained by using it for the P-type layer 117.
  • the charge generation layer 116 is preferably provided with one or both of an electron relay layer 118 and an electron injection buffer layer 119 in addition to the P-type layer 117.
  • the electron relay layer 118 includes at least a substance having an electron transporting property, and has a function of smoothly transferring electrons by preventing the interaction between the electron injection buffer layer 119 and the P-type layer 117.
  • the LUMO level of the substance having an electron transporting property contained in the electron relay layer 118 is the LUMO level of the acceptor substance in the P-type layer 117 and the substance contained in the layer in contact with the charge generation layer 116 in the electron transporting layer 114. It is preferably between the LUMO levels.
  • the specific energy level of the LUMO level in the substance having an electron transporting property used for the electron relay layer 118 is ⁇ 5.0 eV or more, preferably ⁇ 5.0 eV or more and ⁇ 3.0 eV or less. Note that as the substance having an electron transporting property used for the electron relay layer 118, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.
  • the electron injection buffer layer 119 includes an alkali metal, an alkaline earth metal, a rare earth metal, and a compound thereof (including an alkali metal compound (including an oxide such as lithium oxide, a halide, and a carbonate such as lithium carbonate and cesium carbonate).
  • Alkaline earth metal compounds (including oxides, halides, carbonates) or rare earth metal compounds (including oxides, halides, carbonates) can be used. It is.
  • the electron injection buffer layer 119 is formed to include an electron transporting substance and a donor substance, an alkali metal, an alkaline earth metal, a rare earth metal, or a compound thereof (as a donor substance)
  • Alkali metal compounds including oxides such as lithium oxide, halides, carbonates such as lithium carbonate and cesium carbonate
  • alkaline earth metal compounds including oxides, halides, carbonates
  • rare earth metal compounds In addition to (including oxides, halides, and carbonates), organic compounds such as tetrathianaphthacene (abbreviation: TTN), nickelocene, and decamethyl nickelocene can also be used.
  • TTN tetrathianaphthacene
  • nickelocene nickelocene
  • decamethyl nickelocene can also be used.
  • the substance having an electron transporting property can be formed using a material similar to the material of the electron transport layer 114 described above.
  • a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a low work function (specifically, 3.8 eV or less) can be used as a material for forming the second electrode 102.
  • cathode materials include alkali metals such as lithium (Li) and cesium (Cs), and group 1 of the periodic table of elements such as magnesium (Mg), calcium (Ca), and strontium (Sr) Examples include elements belonging to Group 2, and alloys containing these (MgAg, AlLi), europium (Eu), ytterbium (Yb), and other rare earth metals, and alloys containing these.
  • indium oxide-tin oxide containing Al, Ag, ITO, silicon or silicon oxide regardless of the work function.
  • Various conductive materials such as the above can be used for the second electrode 102. These conductive materials can be formed by a dry method such as a vacuum evaporation method or a sputtering method, an inkjet method, a spin coating method, or the like. Alternatively, a sol-gel method may be used for a wet method, or a metal material paste may be used for a wet method.
  • a formation method of the EL layer 103 various methods can be used regardless of a dry method or a wet method.
  • a vacuum deposition method a gravure printing method, an offset printing method, a screen printing method, an ink jet method, a spin coating method, or the like may be used.
  • each electrode or each layer described above may be formed by using different film forming methods.
  • the structure of the layers provided between the first electrode 101 and the second electrode 102 is not limited to the above. However, in order to suppress quenching caused by the proximity of the light emitting region and the metal used for the electrode and the carrier injection layer, holes and electrons are separated from the first electrode 101 and the second electrode 102. A structure in which a light emitting region in which recombinations are provided is preferable.
  • FIGS. 3C and 3D are light-emitting elements having a plurality of light-emitting units, and the light-emitting element illustrated in FIG. 3A or FIG. It can be said that the light-emitting element has a light-emitting unit.
  • a first light emitting unit 511 and a second light emitting unit 512 are stacked between an anode 501 and a cathode 502, and the first light emitting unit 511 and the second light emitting unit 512 are stacked.
  • a charge generation layer 513 is provided between the two. 3D, a first light-emitting unit 511, a second light-emitting unit 512, and a third light-emitting unit 515 are stacked between the cathode 501 and the cathode 502.
  • a charge generation layer 513 is provided between the first light emission unit 511 and the second light emission unit 512, and a charge generation layer 514 is provided between the second light emission unit 512 and the third light emission unit 515.
  • the anode 501 and the cathode 502 correspond to the first electrode 101 and the second electrode 102 in FIG. 3A, respectively, and the same materials as those described in the description of FIG.
  • the first light-emitting unit 511, the second light-emitting unit 512, and the third light-emitting unit 515 may have the same configuration or different configurations. In the case of the same configuration, double luminance can be obtained with the same current density, so that the lifetime of the light emitting element can be significantly improved.
  • the charge generation layer 513 and the charge generation layer 514 have a function of injecting electrons into one light-emitting unit and injecting holes into the other light-emitting unit when a voltage is applied to the anode 501 and the cathode 502, respectively. That is, in FIG. 3C, when a voltage is applied so that the potential of the anode is higher than the potential of the cathode, the charge generation layer 513 injects electrons into the first light-emitting unit 511, and the second What is necessary is just to inject holes into the light emitting unit 512. In FIG.
  • the charge generation layer 514 injects electrons into the second light-emitting unit 512, and the third What is necessary is just to inject holes into the light emitting unit 515.
  • the charge generation layer 513 and the charge generation layer 514 are preferably formed with a structure similar to that of the charge generation layer 116 described with reference to FIG. Since the composite material of an organic compound and a metal oxide is excellent in carrier injecting property and carrier transporting property, low voltage driving and low current driving can be realized.
  • the charge generation layer 513 can also serve as a hole injection layer of the light emission unit. It is not necessary to provide it.
  • the electron injection buffer layer 119 is provided in the charge generation layer 513, the electron injection buffer layer 119 plays a role of the electron injection layer in the light emitting unit on the anode side. There is no need to form. Note that although the charge generation layer 513 has been described in the above description, the charge generation layer 514 can have a similar structure.
  • FIG. 3C illustrates a light-emitting element having two light-emitting units
  • FIG. 3D illustrates a light-emitting element having three light-emitting units.
  • a light-emitting element in which four or more light-emitting units are stacked is also described. Can be applied as well.
  • a plurality of light-emitting units are partitioned between the pair of electrodes by the charge generation layer 513 or the charge generation layer 514, whereby high luminance can be maintained while keeping the current density low. It is possible to realize an element that can emit light and has a longer life.
  • a light-emitting device that can be driven at a low voltage and has low power consumption can be realized.
  • the EL layer 103, the first light emitting unit 511, the second light emitting unit 512, the third light emitting unit, the charge generating layer, and other layers and electrodes include, for example, a vapor deposition method (including a vacuum vapor deposition method), It can be formed by a method such as a droplet discharge method (also referred to as an ink jet method), a coating method, or a gravure printing method. They may also include low molecular weight materials, medium molecular weight materials (including oligomers and dendrimers), or polymeric materials.
  • FIGS. 4A is a top view illustrating the light-emitting device
  • FIG. 4B is a cross-sectional view taken along lines AB and CD of FIG. 4A.
  • the light emitting device includes a 601, a pixel portion 602, and a driver circuit portion (gate line driver circuit) 603.
  • Reference numeral 604 denotes a sealing substrate
  • reference numeral 605 denotes a sealing material
  • the inside surrounded by the sealing material 605 is a space 607.
  • the lead wiring 608 is a wiring for transmitting a signal input to the source line driver circuit 601 and the gate line driver circuit 603, and a video signal, a clock signal, an FPC (flexible printed circuit) 609 serving as an external input terminal, Receives start signal, reset signal, etc.
  • FPC flexible printed circuit
  • a printed wiring board PWB
  • the light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.
  • a driver circuit portion and a pixel portion are formed over the element substrate 610.
  • a source line driver circuit 601 that is a driver circuit portion and one pixel in the pixel portion 602 are illustrated.
  • the element substrate 610 is manufactured using a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, or the like, or a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic resin, or the like. do it.
  • FRP Fiber Reinforced Plastics
  • PVF polyvinyl fluoride
  • the structure of the transistor used for the pixel or the driver circuit there is no particular limitation on the structure of the transistor used for the pixel or the driver circuit.
  • an inverted staggered transistor or a staggered transistor may be used.
  • a top-gate transistor or a bottom-gate transistor may be used.
  • the semiconductor material used for the transistor is not particularly limited, and for example, silicon, germanium, silicon carbide, gallium nitride, or the like can be used.
  • an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In—Ga—Zn-based metal oxide, may be used.
  • crystallinity of a semiconductor material used for the transistor there is no particular limitation on the crystallinity of a semiconductor material used for the transistor, and any of an amorphous semiconductor and a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystal region) is used. May be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.
  • an oxide semiconductor is preferably used for a semiconductor device such as a transistor used in a touch sensor described below.
  • an oxide semiconductor having a wider band gap than silicon is preferably used.
  • the oxide semiconductor preferably contains at least indium (In) or zinc (Zn).
  • the oxide semiconductor includes an oxide represented by an In-M-Zn-based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf). Is more preferable.
  • the semiconductor layer has a plurality of crystal parts, and the crystal part has a c-axis oriented perpendicular to the formation surface of the semiconductor layer or the top surface of the semiconductor layer, and a grain boundary between adjacent crystal parts. It is preferable to use an oxide semiconductor film which does not contain any oxide.
  • the transistor having the above semiconductor layer can hold charge accumulated in the capacitor through the transistor for a long time due to the low off-state current.
  • the driving circuit can be stopped while maintaining the gradation of an image displayed in each display region. As a result, an electronic device with extremely low power consumption can be realized.
  • a base film In order to stabilize the characteristics of the transistor, it is preferable to provide a base film.
  • an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film can be used, which can be formed as a single layer or a stacked layer.
  • the base film is formed by sputtering, CVD (Chemical Vapor Deposition) (plasma CVD, thermal CVD, MOCVD (Metal Organic CVD), etc.), ALD (Atomic Layer Deposition), coating, printing, etc. it can. Note that the base film is not necessarily provided if not necessary.
  • the FET 623 indicates one of the transistors formed in the drive circuit portion 601.
  • the driving circuit may be formed of various CMOS circuits, PMOS circuits, or NMOS circuits.
  • CMOS circuits complementary metal-oxide-semiconductor
  • PMOS circuits PMOS circuits
  • NMOS circuits NMOS circuits.
  • a driver integrated type in which a driver circuit is formed over a substrate is shown; however, this is not necessarily required, and the driver circuit can be formed outside the substrate.
  • the pixel portion 602 is formed by a plurality of pixels including the switching FET 611, the current control FET 612, and the first electrode 613 electrically connected to the drain thereof, but is not limited thereto.
  • the pixel portion may be a combination of two or more FETs and a capacitor.
  • an insulator 614 is formed so as to cover an end portion of the first electrode 613.
  • a positive photosensitive acrylic resin film can be used.
  • a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 614 in order to improve the coverage of an EL layer or the like to be formed later.
  • a positive photosensitive acrylic resin is used as the material of the insulator 614
  • a negative photosensitive resin or a positive photosensitive resin can be used as the insulator 614.
  • An EL layer 616 and a second electrode 617 are formed over the first electrode 613.
  • a material used for the first electrode 613 functioning as an anode a material having a high work function is preferably used.
  • a stack of a titanium nitride film and a film containing aluminum as a main component, a three-layer structure including a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film can be used. Note that with a stacked structure, resistance as a wiring is low, good ohmic contact can be obtained, and a function as an anode can be obtained.
  • the EL layer 616 is formed by various methods such as an evaporation method using an evaporation mask, an inkjet method, and a spin coating method.
  • the EL layer 616 includes the structure described in Embodiment 3. Further, as another material forming the EL layer 616, a low molecular compound or a high molecular compound (including an oligomer and a dendrimer) may be used.
  • the second electrode 617 formed over the EL layer 616 and functioning as a cathode a material having a low work function (Al, Mg, Li, Ca, or an alloy or compound thereof (MgAg, MgIn, AlLi etc.) is preferred.
  • the second electrode 617 includes a thin metal film and a transparent conductive film (ITO, 2 to 20 wt% oxidation).
  • ITO transparent conductive film
  • a stack of indium oxide containing zinc, indium tin oxide containing silicon, zinc oxide (ZnO), or the like is preferably used.
  • a light-emitting element is formed using the first electrode 613, the EL layer 616, and the second electrode 617.
  • the light-emitting element is the light-emitting element described in Embodiment 3. Note that although a plurality of light-emitting elements are formed in the pixel portion, the light-emitting device in this embodiment includes both the light-emitting element described in Embodiment 3 and a light-emitting element having any other structure. It may be.
  • the sealing substrate 604 is bonded to the element substrate 610 with the sealant 605, whereby the light-emitting element 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealant 605. Yes.
  • the space 607 is filled with a filler and may be filled with a sealing material in addition to the case of being filled with an inert gas (such as nitrogen or argon).
  • an inert gas such as nitrogen or argon.
  • a recess is formed in the sealing substrate, and a desiccant is provided therein, whereby deterioration due to the influence of moisture can be suppressed, which is a preferable configuration.
  • an epoxy resin or glass frit is preferably used for the sealant 605. Moreover, it is desirable that these materials are materials that do not transmit moisture and oxygen as much as possible.
  • a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic resin, or the like can be used as a material for the sealing substrate 604.
  • a protective film may be provided on the second electrode.
  • the protective film may be formed of an organic resin film or an inorganic insulating film. Further, a protective film may be formed so as to cover the exposed portion of the sealant 605. The protective film can be provided so as to cover the exposed side surfaces of the surface and side surfaces of the pair of substrates, the sealing layer, the insulating layer, and the like.
  • the protective film a material that hardly permeates impurities such as water can be used. Therefore, it is possible to effectively suppress the diffusion of impurities such as water from the outside to the inside.
  • oxide, nitride, fluoride, sulfide, ternary compound, metal or polymer can be used as a material constituting the protective film.
  • oxide, nitride, fluoride, sulfide, ternary compound, metal or polymer can be used.
  • the protective film is preferably formed by using a film formation method having good step coverage (step coverage).
  • a film formation method having good step coverage there is an atomic layer deposition (ALD: Atomic Layer Deposition) method.
  • a material that can be formed by an ALD method is preferably used for the protective film.
  • ALD method a dense protective film with reduced defects such as cracks and pinholes or a uniform thickness can be formed.
  • damage to the processed member when forming the protective film can be reduced.
  • a protective film that is uniform and has few defects can be formed on the surface having a complicated uneven shape, and the top surface, side surface, and back surface of the touch panel.
  • FIG. 5 shows an example of a light emitting device in which a light emitting element that emits blue light is formed and a color conversion layer is provided to achieve full color.
  • FIG. 5A shows a substrate 1001, a base insulating film 1002, a gate insulating film 1003, gate electrodes 1006, 1007, and 1008, a first interlayer insulating film 1020, a second interlayer insulating film 1021, a peripheral portion 1042, and a pixel portion.
  • a driver circuit portion 1041 for example, a driver circuit portion 1041, light-emitting element first electrodes 1024R, 1024G, and 1024B, a partition wall 1025, an EL layer 1028, a light-emitting element second electrode 1029, a sealing substrate 1031, a sealant 1032, and the like are illustrated. .
  • a color conversion layer and a structure having a function of scattering light are transparent base materials. 1033. Further, a black matrix 1035 may be further provided. A transparent base material 1033 provided with a color conversion layer, a structure having a function of scattering light, and a black matrix is aligned and fixed to the substrate 1001. Note that the color conversion layer, the structure having a function of scattering light, and the black matrix 1035 may be covered with an overcoat layer 1036.
  • FIG. 5B illustrates a color conversion layer and a structure having a function of scattering light (a red color conversion layer 1034R, a green color conversion layer 1034G, and a structure 1134B having a function of scattering light) of the gate insulating film 1003 and the first structure.
  • a red color conversion layer 1034R, a green color conversion layer 1034G, and a structure 1134B having a function of scattering light of the gate insulating film 1003 and the first structure.
  • An example in which the first interlayer insulating film 1020 is formed is shown.
  • the coloring layer may be provided between the substrate 1001 and the sealing substrate 1031.
  • a light-emitting device having a structure in which light is extracted to the substrate 1001 side where the FET is formed bottom emission type
  • a structure in which light is extracted to the sealing substrate 1031 side top-emission type
  • FIG. 1 A cross-sectional view of a top emission type light emitting device is shown in FIG.
  • a substrate that does not transmit light can be used as the substrate 1001.
  • the connection electrode for connecting the FET and the anode of the light emitting element is manufactured, it is formed in the same manner as the bottom emission type light emitting device.
  • a third interlayer insulating film 1037 is formed so as to cover the electrode 1022. This insulating film may play a role of planarization.
  • the third interlayer insulating film 1037 can be formed using other known materials in addition to the same material as the second interlayer insulating film.
  • the first electrodes 1024R, 1024G, and 1024B of the light-emitting element are anodes here, but may be cathodes. In the case of a top emission type light emitting device as shown in FIG. 6, the first electrode is preferably a reflective electrode.
  • the EL layer 1028 has a structure in which blue light emission can be obtained.
  • the top emission structure as shown in FIG. 6 is provided with a color conversion layer and a structure having a function of scattering light (a red color conversion layer 1034R, a green color conversion layer 1034G, and a structure 1134B having a function of scattering light).
  • Sealing can be performed with the sealing substrate 1031.
  • a black matrix 1035 may be provided on the sealing substrate 1031 so as to be positioned between the pixels.
  • the color conversion layer and the structure having a function of scattering light (red color conversion layer 1034R, green color conversion layer 1034G, structure 1134B having a function of scattering light) and the black matrix are covered with an overcoat layer 1036. Also good.
  • the sealing substrate 1031 is a light-transmitting substrate.
  • the color conversion layer and the structure having a function of scattering light are over the second electrode 1029 (or the second May be provided directly on the protective film provided on the electrode 1029.
  • the EL layer may have a structure having a plurality of light emitting layers or a structure having a single light emitting layer.
  • a plurality of EL layers may be provided in one light-emitting element with a charge generation layer interposed therebetween, and one or a plurality of light-emitting layers may be formed in each EL layer.
  • color conversion layers (a red color conversion layer 1034R and a green conversion layer 1034G) are provided on a transparent substrate 1033. Further, a black matrix 1035 may be further provided.
  • a transparent base material 1033 provided with a color conversion layer, a structure having a function of scattering light, and a black matrix is aligned and fixed to the substrate 1001. Note that the color conversion layer, the structure having a function of scattering light, and the black matrix 1035 may be covered with an overcoat layer 1036.
  • FIG. 15B illustrates an example in which a color conversion layer (a red color conversion layer 1034R and a green conversion layer 1034G) is formed between the gate insulating film 1003 and the first interlayer insulating film 1020.
  • the coloring layer may be provided between the substrate 1001 and the sealing substrate 1031.
  • the transflective layer 1043 is sandwiched between the color conversion layers (the red color conversion layer 1034R and the green color conversion layer 1034G) as means for imparting directivity to light.
  • the pair of transflective layers 1043 provided so as to sandwich the color conversion layer emits an optical distance from the interface of one transflective film to the interface of the other transflective layer.
  • the peak wavelength of light is ⁇ (nm)
  • it is formed to be an integral multiple of ⁇ / 2.
  • a light-emitting device having a structure in which light is extracted to the substrate 1001 side where the FET is formed bottom emission type
  • a structure in which light is extracted to the sealing substrate 1031 side top-emission type
  • FIG. 1 A cross-sectional view of a top emission type light emitting device is shown in FIG.
  • a substrate that does not transmit light can be used as the substrate 1001.
  • the connection electrode for connecting the FET and the anode of the light emitting element is manufactured, it is formed in the same manner as the bottom emission type light emitting device.
  • a third interlayer insulating film 1037 is formed so as to cover the electrode 1022. This insulating film may play a role of planarization.
  • the third interlayer insulating film 1037 can be formed using other known materials in addition to the same material as the second interlayer insulating film.
  • the first electrodes 1024R, 1024G, and 1024B of the light-emitting element are anodes here, but may be cathodes. In the case of a top emission type light-emitting device as shown in FIG. 16, the first electrode is preferably a reflective electrode.
  • the EL layer 1028 has a structure in which blue light emission can be obtained.
  • sealing can be performed with a sealing substrate 1031 provided with color conversion layers (red color conversion layer 1034R and green conversion layer 1034G).
  • a black matrix 1035 may be provided on the sealing substrate 1031 so as to be positioned between the pixels.
  • the color conversion layer (red color conversion layer 1034R, green color conversion layer 1034G) or black matrix may be covered with an overcoat layer 1036.
  • the sealing substrate 1031 is a light-transmitting substrate.
  • the color conversion layer (the red color conversion layer 1034R or the green conversion layer 1034G) may be directly provided on the second electrode 1029 (or on the protective film provided on the second electrode 1029). .
  • the EL layer may have a structure having a plurality of light emitting layers or a structure having a single light emitting layer.
  • a plurality of EL layers may be provided in one light-emitting element with a charge generation layer interposed therebetween, and one or a plurality of light-emitting layers may be formed in each EL layer.
  • the light-emitting device in this embodiment mode has a small difference in orientation characteristics between pixels and emission colors, the light-emitting device can have favorable display quality.
  • the light-emitting device in this embodiment mode has a small difference in orientation characteristics between pixels and emission colors, the light-emitting device can have favorable display quality.
  • circuit structure described in this embodiment is particularly preferably used for a light-emitting element having a plurality of light-emitting units between a pair of electrodes, as shown in FIGS. 3C and 3D. be able to.
  • FIG. 1400 A circuit diagram of the pixel circuit 1400 is shown in FIG.
  • the pixel circuit 1400 includes a transistor M1, a transistor M2, a capacitor C1, and a circuit 1401.
  • the pixel circuit 1400 is connected to the wiring S1, the wiring S2, the wiring G1, and the wiring G2.
  • the gate is connected to the wiring G1, one of the source and the drain is connected to the wiring S1, and the other of the source and the drain is connected to one electrode of the capacitor C1.
  • a gate is connected to the wiring G2, one of a source and a drain is connected to the wiring S2, and the other of the source and the drain is connected to the other electrode of the capacitor C1 and the circuit 1401.
  • the circuit 1401 is a circuit including at least one display element.
  • Various elements can be used as the display element, but typically, a light-emitting element such as an organic EL element or an LED element can be used.
  • a liquid crystal element, a MEMS (Micro Electro Mechanical Systems) element, or the like can be used.
  • a node connecting the transistor M1 and the capacitor C1 is N1
  • a node connecting the transistor M2 and the circuit 1401 is N2.
  • the pixel circuit 1400 can hold the potential of the node N1 by turning off the transistor M1. Further, by turning off the transistor M2, the potential of the node N2 can be held. Further, by writing a predetermined potential to the node N1 through the transistor M1 in a state where the transistor M2 is turned off, the potential of the node N2 according to the displacement of the potential of the node N1 by capacitive coupling through the capacitor C1. Can be changed.
  • a transistor including an oxide semiconductor is used as one or both of the transistor M1 and the transistor M2. Can do.
  • the potential of the node N1 and the node N2 can be held for a long time because of the extremely low off-state current, which is a characteristic of the transistor.
  • a transistor using a semiconductor such as silicon may be used.
  • FIG. 12B is a timing chart relating to the operation of the pixel circuit 1400. Note that, for ease of explanation, influences such as various resistances such as wiring resistance, parasitic capacitances such as transistors and wirings, and threshold voltages of transistors are not considered.
  • one frame period is divided into a period T1 and a period T2.
  • the period T1 is a period for writing a potential to the node N2
  • the period T2 is a period for writing a potential to the node N1.
  • Period T1 a potential for turning on the transistor is applied to both the wiring G1 and the wiring G2. Further, the supply voltage V ref is a fixed potential to the wiring S1, and supplies a first data potential V w to the wiring S2.
  • the potential V ref is applied to the node N1 from the wiring S1 through the transistor M1. Further, the node N2, the first data potential V w via the transistor M2 is given. Therefore, a state where the potential difference V w -V ref is held in the capacitor C1.
  • a potential for turning on the transistor M1 is supplied to the wiring G1
  • a potential for turning off the transistor M2 is supplied to the wiring G2.
  • the second data potential V data is supplied to the wiring S1.
  • a predetermined constant potential may be applied to the wiring S2, or it may be floating.
  • the second data potential V data is supplied to the node N1 through the transistor M1.
  • the capacitive coupling by the capacitor C1 the potential of the node N2 is changed by the potential dV according to the second data potential V data. That is, a potential obtained by adding the first data potential Vw and the potential dV is input to the circuit 1401.
  • dV is shown to be a positive value, but may be a negative value. That is, the potential V data may be lower than the potential V ref .
  • the potential dV is substantially determined by the capacitance value of the capacitor C1 and the capacitance value of the circuit 1401.
  • the potential dV is a potential close to the second data potential V data .
  • the pixel circuit 1400 can generate a potential to be supplied to the circuit 1401 including the display element by combining two kinds of data signals, gradation correction can be performed in the pixel circuit 1400. Become.
  • the pixel circuit 1400 can generate a potential exceeding the maximum potential that can be supplied to the wiring S1 and the wiring S2.
  • high dynamic range (HDR) display or the like can be performed.
  • overdrive driving or the like can be realized.
  • a pixel circuit 1400EL illustrated in FIG. 12C includes a circuit 1401EL.
  • the circuit 1401EL includes a light emitting element EL, a transistor M3, and a capacitor C2.
  • the gate is connected to the node N2 and one electrode of the capacitor C2, one of the source and the drain is connected to a wiring to which the potential V H is applied, and the other of the source and the drain is one of the light-emitting elements EL. Connected with electrodes.
  • the other electrode of the capacitor C2 is connected to a wiring to which the potential Vcom is applied.
  • the other electrode of the light-emitting element EL is connected to a wiring to which a potential VL is applied.
  • the transistor M3 has a function of controlling current supplied to the light-emitting element EL.
  • the capacitor C2 functions as a holding capacitor. The capacitor C2 can be omitted if unnecessary.
  • the pixel circuit 1400EL can flow a large current to the light-emitting element EL by applying a high potential to the gate of the transistor M3, so that, for example, HDR display can be realized.
  • a correction signal to the wiring S1 or the wiring S2
  • variation in electrical characteristics in the transistor M3 and the light-emitting element EL can be corrected.
  • circuit is not limited to the circuit illustrated in FIG. 12C, and a structure in which a transistor, a capacitor, or the like is additionally added may be employed.
  • a television device also referred to as a television or a television receiver
  • a monitor for a computer a digital camera, a digital video camera, a digital photo frame
  • a mobile phone a mobile phone
  • Large-sized game machines such as portable telephones, portable game machines, portable information terminals, sound reproduction apparatuses, and pachinko machines. Specific examples of these electronic devices are shown below.
  • FIG. 7A illustrates an example of a television device.
  • a display portion 7103 is incorporated in a housing 7101.
  • a structure in which the housing 7101 is supported by a stand 7105 is shown. Images can be displayed on the display portion 7103.
  • the television device can be operated with an operation switch included in the housing 7101 or a separate remote controller 7110.
  • Channels and volume can be operated with an operation key 7109 provided in the remote controller 7110, and an image displayed on the display portion 7103 can be operated.
  • the remote controller 7110 may be provided with a display portion 7107 for displaying information output from the remote controller 7110.
  • the television device is provided with a receiver, a modem, and the like.
  • General TV broadcasts can be received by a receiver, and connected to a wired or wireless communication network via a modem, so that it can be unidirectional (sender to receiver) or bidirectional (sender and receiver). It is also possible to perform information communication between each other or between recipients).
  • FIG. 7B1 illustrates a computer, which includes a main body 7201, a housing 7202, a display portion 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, and the like.
  • the computer shown in FIG. 7B1 may have a form as shown in FIG.
  • a computer in FIG. 7B2 includes a second display portion 7210 instead of the keyboard 7204 and the pointing device 7206.
  • the second display portion 7210 is a touch panel type, and input can be performed by operating a display for input displayed on the second display portion 7210 with a finger or a dedicated pen.
  • the second display portion 7210 can display not only an input display but also other images.
  • the display portion 7203 may also be a touch panel.
  • FIG. 7C illustrates an example of a mobile terminal.
  • the mobile phone includes a display portion 7402 incorporated in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like.
  • the portable terminal illustrated in FIG. 7C can have a structure in which information can be input by touching the display portion 7402 with a finger or the like. In this case, operations such as making a call or creating a mail can be performed by touching the display portion 7402 with a finger or the like.
  • the first mode is a display mode mainly for displaying an image.
  • the first is a display mode mainly for displaying images, and the second is an input mode mainly for inputting information such as characters.
  • the third is a display + input mode in which the display mode and the input mode are mixed.
  • the display portion 7402 may be set to a character input mode mainly for inputting characters, and an operation for inputting characters displayed on the screen may be performed. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display portion 7402.
  • the orientation (portrait or horizontal) of the mobile terminal is determined, and the screen display of the display portion 7402 is automatically displayed. Can be switched automatically.
  • the screen mode is switched by touching the display portion 7402 or operating the operation button 7403 of the housing 7401. Further, switching can be performed depending on the type of image displayed on the display portion 7402. For example, if the image signal to be displayed on the display unit is moving image data, the mode is switched to the display mode, and if it is text data, the mode is switched to the input mode.
  • the screen mode is switched from the input mode to the display mode. You may control.
  • the display portion 7402 can function as an image sensor. For example, personal authentication can be performed by touching the display portion 7402 with a palm or a finger and capturing an image of a palm print, a fingerprint, or the like. In addition, if a backlight that emits near-infrared light or a sensing light source that emits near-infrared light is used for the display portion, finger veins, palm veins, and the like can be imaged.
  • the applicable range of the light-emitting device of one embodiment of the present invention is so wide that the light-emitting device can be applied to electronic devices in various fields.
  • an electronic device with high display quality can be obtained.
  • FIG. 8A is a schematic diagram illustrating an example of a cleaning robot.
  • the cleaning robot 5100 includes a display 5101 disposed on the upper surface, a plurality of cameras 5102 disposed on the side surface, brushes 5103, and operation buttons 5104. Although not shown, the lower surface of the cleaning robot 5100 is provided with a tire, a suction port, and the like. In addition, the cleaning robot 5100 includes various sensors such as an infrared sensor, an ultrasonic sensor, an acceleration sensor, a piezo sensor, an optical sensor, and a gyro sensor. Moreover, the cleaning robot 5100 includes a wireless communication unit.
  • the cleaning robot 5100 is self-propelled, can detect the dust 5120, and can suck the dust from the suction port provided on the lower surface.
  • the cleaning robot 5100 can analyze an image captured by the camera 5102 and determine whether there is an obstacle such as a wall, furniture, or a step. In addition, when an object that is likely to be entangled with the brush 5103 such as wiring is detected by image analysis, the rotation of the brush 5103 can be stopped.
  • the display 5101 can display the remaining amount of the battery, the amount of dust sucked, and the like.
  • the route on which the cleaning robot 5100 has traveled may be displayed on the display 5101.
  • the display 5101 may be a touch panel, and the operation buttons 5104 may be provided on the display 5101.
  • the cleaning robot 5100 can communicate with a portable electronic device 5140 such as a smartphone.
  • An image captured by the camera 5102 can be displayed on the portable electronic device 5140. Therefore, the owner of the cleaning robot 5100 can know the state of the room even when away from home.
  • the display on the display 5101 can be confirmed with a portable electronic device such as a smartphone.
  • the light-emitting device of one embodiment of the present invention can be used for the display 5101.
  • a robot 2100 illustrated in FIG. 8B includes an arithmetic device 2110, an illuminance sensor 2101, a microphone 2102, an upper camera 2103, a speaker 2104, a display 2105, a lower camera 2106, an obstacle sensor 2107, and a moving mechanism 2108.
  • the microphone 2102 has a function of detecting a user's speaking voice, environmental sound, and the like.
  • the speaker 2104 has a function of emitting sound.
  • the robot 2100 can communicate with the user using the microphone 2102 and the speaker 2104.
  • the display 2105 has a function of displaying various information.
  • the robot 2100 can display information desired by the user on the display 2105.
  • the display 2105 may be equipped with a touch panel. Further, the display 2105 may be an information terminal that can be removed, and is installed at a fixed position of the robot 2100 to enable charging and data transfer.
  • the upper camera 2103 and the lower camera 2106 have a function of imaging the surroundings of the robot 2100.
  • the obstacle sensor 2107 can detect the presence or absence of an obstacle in the traveling direction when the robot 2100 moves forward using the moving mechanism 2108.
  • the robot 2100 can recognize the surrounding environment using the upper camera 2103, the lower camera 2106, and the obstacle sensor 2107, and can move safely.
  • the light-emitting device of one embodiment of the present invention can be used for the display 2105.
  • FIG. 8C illustrates an example of a goggle type display.
  • the goggle type display includes, for example, a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, operation keys 5005 (including a power switch or operation switch), a connection terminal 5006, and a sensor 5007 (force, displacement, position, speed). , Acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared
  • the light-emitting device of one embodiment of the present invention can be used for the display portion 5001 and the second display portion 5002.
  • the light-emitting device of one embodiment of the present invention can be mounted on a windshield or a dashboard of an automobile.
  • FIG. 9 illustrates an embodiment in which the light-emitting device of one embodiment of the present invention is used for a windshield or a dashboard of an automobile.
  • Display regions 5200 to 5203 are display regions provided using the light-emitting device of one embodiment of the present invention.
  • a display region 5200 and a display region 5201 are display devices each including the light-emitting device of one embodiment of the present invention provided on a windshield of an automobile.
  • the light-emitting device of one embodiment of the present invention can be a so-called see-through display device in which the opposite side can be seen through by forming the first electrode and the second electrode with a light-transmitting electrode. If it is a see-through display, it can be installed without obstructing the field of view even if it is installed on the windshield of an automobile.
  • a light-transmitting transistor such as an organic transistor using an organic semiconductor material or a transistor using an oxide semiconductor is preferably used.
  • a display region 5202 is a display device on which the light-emitting device of one embodiment of the present invention provided in a pillar portion is mounted.
  • the field of view blocked by the pillar can be complemented by projecting an image from the imaging means provided on the vehicle body.
  • the display area 5203 provided in the dashboard portion compensates for the blind spot by projecting the image from the imaging means provided outside the vehicle from the field of view blocked by the vehicle body, and improves safety. Can do. By displaying the video so as to complement the invisible part, it is possible to check the safety more naturally and without a sense of incongruity.
  • a display area 5203 can display various information by displaying navigation information, a speedometer, a tachometer, a travel distance, fuel, a gear state, an air conditioner setting, and the like.
  • the display items and layout can be appropriately changed according to the user's preference. Note that these pieces of information can also be provided in the display areas 5200 to 5202.
  • the display areas 5200 to 5203 can also be used as lighting devices.
  • FIG. 10A and 10B show a foldable portable information terminal 5150.
  • FIG. A foldable portable information terminal 5150 includes a housing 5151, a display region 5152, and a bent portion 5153.
  • FIG. 10A illustrates the portable information terminal 5150 in a developed state.
  • FIG. 10B illustrates the portable information terminal in a folded state. Although the portable information terminal 5150 has a large display area 5152, the portable information terminal 5150 is compact and excellent in portability when folded.
  • the display region 5152 can be folded in half by a bent portion 5153.
  • the bent portion 5153 includes a member that can be expanded and contracted and a plurality of support members.
  • the bent portion 5153 is folded with a radius of curvature of 2 mm or more, preferably 3 mm or more.
  • the display area 5152 may be a touch panel (input / output device) that controls a touch sensor (input device).
  • the light-emitting device of one embodiment of the present invention can be used for the display region 5152.
  • FIG. 11A to 11C show a foldable portable information terminal 9310.
  • FIG. 11A illustrates the portable information terminal 9310 in a developed state.
  • FIG. 11B illustrates the portable information terminal 9310 in a state in which the state is changed from one of the expanded state and the folded state to the other.
  • FIG. 11C illustrates the portable information terminal 9310 in a folded state.
  • the portable information terminal 9310 is excellent in portability in a folded state, and in a developed state, the portable information terminal 9310 is excellent in display listability due to a seamless display area.
  • the display panel 9311 is supported by three housings 9315 connected by hinges 9313.
  • the display panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device).
  • the display panel 9311 can be reversibly deformed from a developed state to a folded state by bending the two housings 9315 via the hinge 9313.
  • the light-emitting device of one embodiment of the present invention can be used for the display panel 9311.
  • a display region 9312 in the display panel 9311 is a display region located on a side surface of the portable information terminal 9310 in a folded state.
  • 101 first electrode, 102: second electrode, 103: EL layer, 111: hole injection layer, 112: hole transport layer, 113: light emitting layer, 114: electron transport layer, 115: electron injection layer, 116: charge generation layer, 117: P-type layer, 118: electron relay layer, 119: electron injection buffer layer, 200: insulator, 201B: first electrode, 201G: first electrode, 201R: first electrode 202: EL layer, 203: second electrode, 204: protective layer, 205B: structure, 205G: first color conversion layer, 205R: second color conversion layer, 206: black matrix, 207B: first Light emitting element, 207G: second light emitting element, 207R: third light emitting element, 208B: first pixel, 208G: second pixel, 208R: third pixel, 209: optical distance, 210G: directivity Means for imparting 2 0R: means for imparting directivity, 215B: layer, 225B: blue color filter

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KR1020207036068A KR102814688B1 (ko) 2018-06-06 2019-05-31 발광 장치, 표시 장치, 및 전자 기기
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US15/734,633 US12075642B2 (en) 2018-06-06 2019-05-31 Light-emitting device, display device, and electronic device
KR1020257017359A KR20250079071A (ko) 2018-06-06 2019-05-31 발광 장치, 표시 장치, 및 전자 기기
JP2024090202A JP2024107045A (ja) 2018-06-06 2024-06-03 発光装置、電子機器及び表示装置
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113594386A (zh) * 2021-07-28 2021-11-02 京东方科技集团股份有限公司 显示面板和显示装置
WO2022098035A1 (ko) * 2020-11-03 2022-05-12 엘지전자 주식회사 디스플레이 장치
CN114551501A (zh) * 2020-11-24 2022-05-27 乐金显示有限公司 具有驱动电路和发光器件的显示设备
WO2024218625A1 (ja) * 2023-04-21 2024-10-24 株式会社半導体エネルギー研究所 発光デバイス、表示装置、表示モジュール、電子機器
JP7851094B2 (ja) 2020-10-08 2026-04-24 三井金属株式会社 アミノポリカルボン酸錯体粉末、添加材及びセラミック粉末の製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4242704A3 (en) 2015-06-24 2023-11-22 Red Bank Technologies LLC Band edge emission enhanced organic light emitting diode with a localized emitter
CN113412438A (zh) 2019-02-06 2021-09-17 株式会社半导体能源研究所 发光器件、发光装置、电子设备、显示装置及照明装置
CN116230834A (zh) * 2019-12-17 2023-06-06 群创光电股份有限公司 显示装置
CN113517264A (zh) * 2020-04-10 2021-10-19 富泰华工业（深圳）有限公司 显示模组及全息显示装置
US12256595B2 (en) 2020-09-25 2025-03-18 Red Bank Technologies Llc Band edge emission enhanced organic light emitting diode-based devices that emit multiple light wavelengths
CN114975815A (zh) * 2021-02-25 2022-08-30 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置、车辆
CN112701206B (zh) * 2021-03-23 2021-07-06 北京芯海视界三维科技有限公司 发光器件及其设置功能件的方法、显示装置
US12349538B2 (en) 2021-03-25 2025-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, light-emitting apparatus, electronic device, and lighting device
US12477918B2 (en) 2021-03-31 2025-11-18 Semiconductor Energy Laboratory Co., Ltd. Display apparatus, display module, electronic device, and method for manufacturing display apparatus
US12342706B2 (en) * 2021-06-16 2025-06-24 Chengdu Boe Optoelectronics Technology Co., Ltd. Display panel and display apparatus
CN115701233A (zh) 2021-07-21 2023-02-07 京东方科技集团股份有限公司 显示面板及其制作方法、显示装置
US20240397749A1 (en) * 2021-12-03 2024-11-28 Red Bank Technologies Llc Band-edge emission enhanced organic light emitting diodes with simplified structures and high energy efficiency
CN114203929B (zh) * 2021-12-09 2023-09-05 武汉华星光电半导体显示技术有限公司 显示面板及移动终端
CN114665046A (zh) * 2022-03-30 2022-06-24 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009070814A (ja) * 2007-08-21 2009-04-02 Fujifilm Corp 散乱部材を有する有機エレクトロルミネッセンス表示装置
JP2010015785A (ja) * 2008-07-02 2010-01-21 Fujifilm Corp 発光素子、多色表示装置及び発光素子の製造方法
WO2011145358A1 (ja) * 2010-05-21 2011-11-24 シャープ株式会社 蛍光体基板、発光素子、およびそれを用いた表示装置
JP2012174334A (ja) * 2011-02-17 2012-09-10 Dainippon Printing Co Ltd 有機ｅｌパネル及びその製造方法
JP2015026418A (ja) * 2011-11-18 2015-02-05 シャープ株式会社 有機エレクトロルミネッセンス表示装置およびそれを用いた電子機器、並びに、有機エレクトロルミネッセンス表示装置の製造方法
JP2016006768A (ja) * 2014-05-30 2016-01-14 株式会社半導体エネルギー研究所 発光装置、表示装置及び電子機器
JP2016225273A (ja) * 2015-05-29 2016-12-28 鴻海精密工業股▲ふん▼有限公司 有機発光表示装置及びその製造方法
JP2017037121A (ja) * 2015-08-07 2017-02-16 シャープ株式会社 色変換基板および表示装置
JP2017062902A (ja) * 2015-09-24 2017-03-30 シャープ株式会社 有機エレクトロルミネッセンス装置

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3297619B2 (ja) 1996-12-18 2002-07-02 ティーディーケイ株式会社 有機ｅｌカラーディスプレイ
GB2353400B (en) 1999-08-20 2004-01-14 Cambridge Display Tech Ltd Mutiple-wavelength light emitting device and electronic apparatus
US6762553B1 (en) 1999-11-10 2004-07-13 Matsushita Electric Works, Ltd. Substrate for light emitting device, light emitting device and process for production of light emitting device
US6739931B2 (en) 2000-09-18 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
SG118118A1 (en) 2001-02-22 2006-01-27 Semiconductor Energy Lab Organic light emitting device and display using the same
SG142163A1 (en) 2001-12-05 2008-05-28 Semiconductor Energy Lab Organic semiconductor element
TWI407830B (zh) 2003-09-26 2013-09-01 半導體能源研究所股份有限公司 發光元件和其製法
JP2005302313A (ja) 2004-04-06 2005-10-27 Idemitsu Kosan Co Ltd 有機ｅｌ表示装置及びフルカラーデバイス
US7057339B2 (en) 2004-04-08 2006-06-06 Eastman Kodak Company OLED with color change media
KR101215279B1 (ko) 2004-05-21 2012-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 조명 장치
US8420227B2 (en) 2005-03-23 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Composite material, light emitting element and light emitting device
US20060240277A1 (en) 2005-04-20 2006-10-26 Eastman Kodak Company Tandem OLED device
US7564182B2 (en) 2005-06-29 2009-07-21 Eastman Kodak Company Broadband light tandem OLED display
US7745989B2 (en) 2005-06-30 2010-06-29 Semiconductor Energy Laboratory Co., Ltd Light emitting element, light emitting device, and electronic apparatus
US20070103056A1 (en) 2005-11-08 2007-05-10 Eastman Kodak Company OLED device having improved light output
JP2007164123A (ja) 2005-11-15 2007-06-28 Fuji Electric Holdings Co Ltd 色変換機能付カラーフィルタ、有機ｅｌディスプレイおよびその製造方法
JP4441883B2 (ja) 2005-12-06 2010-03-31 ソニー株式会社 表示装置
US7977862B2 (en) 2005-12-21 2011-07-12 Lg Display Co., Ltd. Organic light emitting devices
US7791271B2 (en) * 2006-02-24 2010-09-07 Global Oled Technology Llc Top-emitting OLED device with light-scattering layer and color-conversion
US20070205423A1 (en) 2006-03-03 2007-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20070115478A (ko) * 2006-06-02 2007-12-06 삼성에스디아이 주식회사 유기 발광 장치
TWI378740B (en) 2006-10-04 2012-12-01 Ritdisplay Corp Full-color organic light emitting diode display panel and method thereof
JP5030742B2 (ja) 2006-11-30 2012-09-19 株式会社半導体エネルギー研究所 発光素子
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
WO2008105294A1 (ja) 2007-02-28 2008-09-04 Idemitsu Kosan Co., Ltd. 有機ｅｌ素子
CN110724124A (zh) 2007-05-17 2020-01-24 株式会社半导体能源研究所 三唑衍生物
US20090051278A1 (en) 2007-08-21 2009-02-26 Fujifilm Corporation Organic electroluminescent display device having scattering member
KR20140106740A (ko) 2007-12-03 2014-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 카바졸 유도체, 및 카바졸 유도체를 사용하는 발광 소자, 발광 장치 및 전자 기기
JP5597967B2 (ja) 2008-10-24 2014-10-01 コニカミノルタ株式会社 有機感光体、画像形成方法、画像形成装置
US8283002B2 (en) 2008-11-18 2012-10-09 Plextronics, Inc. Aminobenzene compositions and related devices and methods
JP5551428B2 (ja) * 2009-01-06 2014-07-16 ユー・ディー・シー アイルランド リミテッド 電荷輸送材料及び有機電界発光素子
CN120623053A (zh) 2009-05-29 2025-09-12 株式会社半导体能源研究所 芴衍生物、发光元件、发光器件、电子器件和照明器件
US8642190B2 (en) 2009-10-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Fluorene derivative, light-emitting element, light-emitting device, electronic device, and lighting device
KR102098563B1 (ko) 2010-06-25 2020-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 디스플레이 및 전자 기기
JP2013539584A (ja) 2010-07-26 2013-10-24 メルク パテント ゲーエムベーハー 量子ドットおよびホスト
WO2012046560A1 (en) 2010-10-04 2012-04-12 Semiconductor Energy Laboratory Co., Ltd. Composite material, light-emitting element, light-emitting device, electronic device, and lighting device
WO2012046715A1 (ja) * 2010-10-06 2012-04-12 シャープ株式会社 発光材料、及びこれを用いた有機発光素子、波長変換発光素子、光変換発光素子、有機レーザーダイオード発光素子、色素レーザー、表示装置並びに照明装置
JP5872912B2 (ja) 2011-01-21 2016-03-01 株式会社半導体エネルギー研究所 発光装置
JP5952006B2 (ja) 2011-01-28 2016-07-13 株式会社半導体エネルギー研究所 フルオレン誘導体及び発光素子
KR102095382B1 (ko) 2011-02-11 2020-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 표시 장치
KR20210145855A (ko) 2011-02-16 2021-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 엘리먼트
JP5772085B2 (ja) 2011-03-09 2015-09-02 セイコーエプソン株式会社 発光素子、発光装置、表示装置および電子機器
JP6062636B2 (ja) 2011-03-10 2017-01-18 ローム株式会社 有機ｅｌ装置
EP2503618B1 (en) 2011-03-23 2014-01-01 Semiconductor Energy Laboratory Co., Ltd. Composite material, light-emitting element, light-emitting device, electronic device, and lighting device
WO2012127990A1 (en) 2011-03-23 2012-09-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
DE112012001504B4 (de) 2011-03-30 2017-09-21 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierendes Element
US9419239B2 (en) 2011-07-08 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Composite material, light-emitting element, light-emitting device, electronic device, lighting device, and organic compound
TWI570121B (zh) 2011-11-25 2017-02-11 半導體能源研究所股份有限公司 發光元件、發光裝置、電子裝置、照明裝置及有機化合物
US8921872B2 (en) 2011-12-09 2014-12-30 Sony Corporation Display unit and method of manufacturing the same, electronic apparatus, illumination unit, and light-emitting device and method of manufacturing the same
KR102173801B1 (ko) 2012-07-12 2020-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 및 표시 장치의 제작 방법
DE112013007830B4 (de) 2012-08-03 2024-07-04 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierendes Element, lichtemittierende Vorrichtung und Beleuchtungsvorrichtung
DE102013214661B4 (de) 2012-08-03 2023-01-05 Semiconductor Energy Laboratory Co., Ltd. Licht emittierendes Element, Licht emittierende Vorrichtung und Beleuchtungsvorrichtung
US9142710B2 (en) 2012-08-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
KR20140038886A (ko) 2012-09-21 2014-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자
US9496503B2 (en) 2013-03-25 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Organic compound, light-emitting element, light-emitting device, electronic device, and lighting device
KR102136040B1 (ko) 2013-03-26 2020-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유기 화합물, 발광 소자, 발광 장치, 표시 장치, 전자 기기 및 조명 장치
US10043982B2 (en) 2013-04-26 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
KR102001353B1 (ko) 2013-08-26 2019-07-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
WO2015050253A1 (ja) 2013-10-04 2015-04-09 日産化学工業株式会社 アニリン誘導体およびその利用
KR102093628B1 (ko) * 2013-10-10 2020-03-26 엘지디스플레이 주식회사 유기전계 발광소자 및 이의 제조 방법
KR102717395B1 (ko) 2013-12-02 2024-10-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 모듈, 조명 모듈, 발광 장치, 표시 장치, 전자 기기, 및 조명 장치
KR102523989B1 (ko) 2013-12-02 2023-04-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
US9165984B2 (en) 2014-01-28 2015-10-20 Universal Display Corporation OLEDs for use in NVIS capable devices
KR20150130224A (ko) 2014-05-13 2015-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 표시 장치, 전자 기기, 및 조명 장치
TWI777568B (zh) 2014-05-30 2022-09-11 日商半導體能源研究所股份有限公司 發光元件，發光裝置，電子裝置以及照明裝置
DE102015213426B4 (de) 2014-07-25 2022-05-05 Semiconductor Energy Laboratory Co.,Ltd. Licht emittierendes Element, Licht emittierende Vorrichtung, elekronisches Gerät, Beleuchtungsvorrichtung und organische Verbindung
KR102377360B1 (ko) 2014-08-08 2022-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 조명 장치, 표시 장치, 디스플레이 패널, 전자 기기
CN111293226B (zh) 2014-09-30 2022-10-28 株式会社半导体能源研究所 发光元件、显示装置、电子设备以及照明装置
JP2016072250A (ja) 2014-09-30 2016-05-09 株式会社半導体エネルギー研究所 発光装置、電子機器、及び照明装置
WO2016063169A1 (en) 2014-10-23 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
WO2016098570A1 (ja) 2014-12-15 2016-06-23 Jsr株式会社 有機ｅｌ素子、硬化性樹脂組成物、波長変換部の形成方法および有機ｅｌ装置
US20160225273A1 (en) 2015-01-29 2016-08-04 Xerox Corporation Methods and systems for evaluating user
US10903440B2 (en) 2015-02-24 2021-01-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
JP2016164855A (ja) * 2015-03-06 2016-09-08 シャープ株式会社 発光装置並びにこれを備えた表示装置、照明装置および電子機器
DE112016002297B4 (de) 2015-05-21 2025-06-12 Semiconductor Energy Laboratory Co., Ltd. Licht emittierende Vorrichtung, hochmolekulares Material und elektronisches Gerät
TWI757234B (zh) 2015-05-21 2022-03-11 日商半導體能源研究所股份有限公司 發光元件、顯示裝置、電子裝置、及照明裝置
DE112016002728B4 (de) 2015-06-17 2024-09-12 Semiconductor Energy Laboratory Co., Ltd. Licht emittierendes Element, Anzeigevorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
KR102873722B1 (ko) 2015-07-21 2025-10-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 장치, 전자 기기, 및 조명 장치
KR102616411B1 (ko) 2015-07-23 2023-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 장치, 전자 기기, 및 조명 장치
US20170062749A1 (en) 2015-09-01 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
KR102914550B1 (ko) 2015-09-30 2026-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 장치, 전자 기기, 및 조명 장치
KR102626853B1 (ko) 2015-10-30 2024-01-18 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102444177B1 (ko) 2015-12-28 2022-09-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR102512069B1 (ko) 2015-12-31 2023-03-21 삼성디스플레이 주식회사 청색 유기 발광 소자 및 이를 포함하는 표시 장치
CN108431985B (zh) 2016-01-08 2020-06-23 日立化成株式会社 有机电子材料、有机电子元件及有机电致发光元件
KR102817026B1 (ko) 2017-05-19 2025-06-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 디바이스, 발광 장치, 전자 기기, 및 조명 장치

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009070814A (ja) * 2007-08-21 2009-04-02 Fujifilm Corp 散乱部材を有する有機エレクトロルミネッセンス表示装置
JP2010015785A (ja) * 2008-07-02 2010-01-21 Fujifilm Corp 発光素子、多色表示装置及び発光素子の製造方法
WO2011145358A1 (ja) * 2010-05-21 2011-11-24 シャープ株式会社 蛍光体基板、発光素子、およびそれを用いた表示装置
JP2012174334A (ja) * 2011-02-17 2012-09-10 Dainippon Printing Co Ltd 有機ｅｌパネル及びその製造方法
JP2015026418A (ja) * 2011-11-18 2015-02-05 シャープ株式会社 有機エレクトロルミネッセンス表示装置およびそれを用いた電子機器、並びに、有機エレクトロルミネッセンス表示装置の製造方法
JP2016006768A (ja) * 2014-05-30 2016-01-14 株式会社半導体エネルギー研究所 発光装置、表示装置及び電子機器
JP2016225273A (ja) * 2015-05-29 2016-12-28 鴻海精密工業股▲ふん▼有限公司 有機発光表示装置及びその製造方法
JP2017037121A (ja) * 2015-08-07 2017-02-16 シャープ株式会社 色変換基板および表示装置
JP2017062902A (ja) * 2015-09-24 2017-03-30 シャープ株式会社 有機エレクトロルミネッセンス装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7851094B2 (ja) 2020-10-08 2026-04-24 三井金属株式会社 アミノポリカルボン酸錯体粉末、添加材及びセラミック粉末の製造方法
WO2022098035A1 (ko) * 2020-11-03 2022-05-12 엘지전자 주식회사 디스플레이 장치
CN114551501A (zh) * 2020-11-24 2022-05-27 乐金显示有限公司 具有驱动电路和发光器件的显示设备
CN113594386A (zh) * 2021-07-28 2021-11-02 京东方科技集团股份有限公司 显示面板和显示装置
CN113594386B (zh) * 2021-07-28 2022-09-23 京东方科技集团股份有限公司 显示面板和显示装置
WO2024218625A1 (ja) * 2023-04-21 2024-10-24 株式会社半導体エネルギー研究所 発光デバイス、表示装置、表示モジュール、電子機器

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US20210234112A1 (en) 2021-07-29
CN112219452A (zh) 2021-01-12
US20240341112A1 (en) 2024-10-10
US12075642B2 (en) 2024-08-27
KR102814688B1 (ko) 2025-05-29
KR20250079071A (ko) 2025-06-04
JP2024107045A (ja) 2024-08-08
KR20210018296A (ko) 2021-02-17

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