WO2019228006A1 - 蒸镀用掩模板的制作方法及蒸镀用掩模板 - Google Patents

蒸镀用掩模板的制作方法及蒸镀用掩模板 Download PDF

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Publication number
WO2019228006A1
WO2019228006A1 PCT/CN2019/077200 CN2019077200W WO2019228006A1 WO 2019228006 A1 WO2019228006 A1 WO 2019228006A1 CN 2019077200 W CN2019077200 W CN 2019077200W WO 2019228006 A1 WO2019228006 A1 WO 2019228006A1
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WO
WIPO (PCT)
Prior art keywords
mask
vapor deposition
pattern
open
photoresist layer
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PCT/CN2019/077200
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English (en)
French (fr)
Inventor
肖志慧
郭远征
王菲菲
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/490,385 priority Critical patent/US20210404079A1/en
Publication of WO2019228006A1 publication Critical patent/WO2019228006A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C17/00—Hand tools or apparatus using hand held tools, for applying liquids or other fluent materials to, for spreading applied liquids or other fluent materials on, or for partially removing applied liquids or other fluent materials from, surfaces
    • B05C17/06—Stencils
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • B05C21/005—Masking devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/10—Moulds; Masks; Masterforms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present disclosure relates to a method for manufacturing a mask for vapor deposition and a mask for vapor deposition.
  • OLED display panels are known as the most promising display devices due to their characteristics of self-luminous, high brightness, high contrast, low operating voltage, and flexible display. OLED display panels are self-luminous display devices. In order to improve the color gamut, contrast, and brightness efficiency of the display, separate sub-pixel light-emitting layers are often used for color display. For example, red (R) color sub-pixels use a light-emitting layer that can emit red light. The green (G) color sub-pixel uses a light-emitting layer capable of emitting green light, and the blue (B) color sub-pixel uses a light-emitting layer capable of emitting blue light.
  • red (R) color sub-pixels use a light-emitting layer that can emit red light
  • the green (G) color sub-pixel uses a light-emitting layer capable of emitting green light
  • the blue (B) color sub-pixel uses a light-emitting layer capable of emitting blue light.
  • FMM Feine Metal Mask
  • the quality of the FMM such as the uniformity of the force of the FMM and the position accuracy of the grid structure, directly determines the evaporation of the light-emitting layer
  • the quality of the plating affects the display effect. Therefore, improving the quality of the FMM is very important to improve the quality of the display panel.
  • Embodiments of the present disclosure provide a method for manufacturing a vapor deposition mask and a vapor deposition mask to improve the quality of the vapor deposition mask.
  • an embodiment of the present disclosure provides a method for manufacturing a mask for vapor deposition, the method for manufacturing includes: providing an open mask, the open mask having at least one open area; A photoresist layer is formed in the opening area, and the photoresist layer pattern in the opening area is at least partly the same as the pattern of the hollow portion of the mask for vapor deposition; it is deposited in the area where the photoresist layer is formed The material of the vapor deposition mask is used to form a non-hollowed portion pattern of the vapor deposition mask, wherein the non-hollowed portion pattern is connected to a sidewall of the opening region at an edge.
  • the manufacturing method further includes: removing the photoresist layer, thereby obtaining a vapor deposition mask having the pattern of the non-hollow portion.
  • depositing a material for the evaporation mask on a side of the open mask having the photoresist layer formed thereon includes: depositing the material for the evaporation mask by an electroforming deposition process.
  • the forming a photoresist layer in the opening area includes: coating a photoresist in the opening area; patterning the photoresist to remove a line position of the non-hollowed-out pattern At the photoresist.
  • a non-hollowed-out portion pattern area of the evaporation mask is smaller than an area of the opening area.
  • the manufacturing method further includes: while removing the photoresist at the line position of the non-hollow portion pattern, at least a portion between the edge of the non-hollow portion pattern and the sidewall of the opening is removed. So that there is a gap between at least a portion of an edge of the non-hollowed-out portion pattern and a sidewall of the opening region.
  • removing at least a portion of the photoresist between the edge of the non-hollow portion pattern and the side wall of the opening includes: removing A photoresist is ring-shaped between the edge of the non-hollowed part pattern and the side wall of the opening, so that there is a gap between the edge of the non-hollowed part pattern and the side wall of the opening area.
  • the thickness of the photoresist layer is equal to the thickness of the open mask.
  • the thickness of the photoresist layer is smaller than the thickness of the open mask, and one surface of the photoresist layer is flush with one surface of the open mask.
  • the photoresist layer further covers a non-opening area of the open mask.
  • the method before the step of forming a photoresist layer in the opening area, includes: placing the open mask on a base, so that the base supports the open area.
  • the pattern of the non-hollowed portion of the mask for vapor deposition is a grid structure including horizontally and vertically crossing lines.
  • the material for depositing a mask for vapor deposition in a region where the photoresist layer is formed includes: blocking the non-opening area, thereby forming The material of the mask plate for vapor deposition is deposited in the area having the photoresist layer.
  • an embodiment of the present disclosure provides a mask for vapor deposition.
  • the mask for vapor deposition is manufactured by using the manufacturing method described in the first aspect.
  • the mask for vapor deposition includes: an open mask. , Which has at least one opening area; at least one non-hollow portion pattern of the evaporation mask, and the non-hollow portion pattern of the at least one evaporation mask is located one-to-one correspondingly in the at least one opening area, and
  • the non-hollowed-out pattern is connected to the sidewall of the open area where the non-hollowed-out pattern is located.
  • the area of the non-hollowed-out pattern of the masking plate for vapor deposition is smaller than the area of the opening.
  • connection structure connecting the edge and the side wall is provided between at least a part of the edge of the evaporation mask and a side wall of the opening.
  • a ring-shaped connection structure surrounding the non-hollowed portion pattern is provided between an edge of the non-hollowed portion pattern of the mask for vapor deposition and a side wall of the opening.
  • the width of the connection structure is 0.1 mm to 20 mm.
  • the materials of the open mask, the non-hollowed-out portion pattern, and the connection structure include Invar and / or metallic nickel.
  • the thickness of the non-hollowed-out portion pattern and the connection structure is equal to or less than the thickness of the open mask.
  • the pattern of the non-hollowed portion of the mask for vapor deposition is a grid structure including horizontally and vertically crossing lines.
  • the mask for vapor deposition further includes: a support frame provided on one side of the open mask, and the support frame is connected to a side of the open mask and is used for supporting The open mask is described.
  • FIG. 1a to FIG. 1d are schematic diagrams of an exemplary FMM screen opening method
  • FIG. 2a to FIG. 2e are schematic diagrams of steps of a method for manufacturing a vapor deposition mask provided by an embodiment of the present disclosure
  • FIG. 3a to FIG. 3e are cross-sectional structural views of FIG. 2a to FIG.
  • 6- photoresist photoresist layer; 6- photoresist layer;
  • the quality of the FMM directly determines the quality of the evaporation of the light-emitting layer.
  • the method of making an FMM is roughly: welding a masking strip (Cover) 2, a supporting strip (Howling) 3 and a long FMM with a grid structure on a metal frame (Frame 1) in this order.
  • Unit 4 forming a set of FMM.
  • the step of welding the FMM unit 4 is called a stretched net, which is actually a process of unfolding and tightening the FMM unit 4.
  • the FMM is prone to uneven force during the screen expansion process. Wrinkles appear in the display area AA of the FMM, resulting in poor color mixing of the light-emitting layers of different colors deposited by evaporation.
  • irregular-shaped display panels such as display panels with rounded corners or other irregular-shaped display panels, the display area of the FMM is more prone to wrinkles due to the irregular shape.
  • the FMM for making a special-shaped display panel usually adopts the following two methods:
  • Method 1 When making an FMM unit, make a non-etched or semi-etched Dummy structure in areas where rounding corners or irregular patterns are needed.
  • the production cost of this method is high, and due to the existence of the irregular structure, there are stress differences in different positions of the FMM unit when the screen is stretched, and the difficulty of the stretched screen is increased.
  • the accuracy of the pixel position (Pixel Position (Accuracy, PPA) requirements are getting higher and higher, and it is very easy to cause defects such as color mixing.
  • Method 2 Use a shielding bar and a support bar to block the required outer contour of the special-shaped display panel in the FMM. This method places high requirements on the position accuracy of the display panel, and it is very easy to cause problems such as color mixing.
  • An embodiment of the present disclosure provides a method for manufacturing a mask for evaporation, as shown in FIGS. 2a to 2e and FIGS. 3a to 3e.
  • the manufacturing method includes the following steps:
  • an open mask 5 is provided.
  • the open mask 5 has at least one open area BB.
  • the size and area of the open area BB on the open mask plate 5 may be equal to or slightly larger than the non-hollowed-out portion pattern of the mask plate for evaporation to be formed, for example, the overall size and area of the grid structure.
  • the material of the open mask 5 may be a material of a mask for vapor-emitting layer evaporation, and may be, for example, Invar or metallic nickel (Ni).
  • a plurality of jig grooves 51 are provided on the edge of the open mask 5.
  • a jig clamps the edge of the substrate to be vapor-deposited to the open mask.
  • the template 5 is attached, and the fixture groove 51 can accommodate a fixture holding the substrate to be evaporated, so that the substrate to be evaporated and the open mask 5 are closely attached.
  • a support frame 11 may also be provided on the lower surface of the open mask plate 5 (the surface on the open mask plate 5 which is in contact with the substrate to be vapor-deposited is the upper surface, and the side opposite to the upper surface is the lower surface). It is in contact with the edge of the lower surface of the open mask 5 and is used to support the open mask 5.
  • a photoresist layer 6 ' is formed at least in each of the opening regions BB of the open mask 5 and the photoresist layer 6' is formed in the opening regions.
  • a hollow portion pattern 7 ′ having at least the same photoresist layer pattern as the non-hollow portion pattern of the vapor deposition mask.
  • step S2 may include:
  • the glue nozzle 10 can be used to coat only in the open area BB; the photoresist can also be uniformly coated on the open area BB and the non-open area of the open mask 5 so that the glue nozzle 10 can be continuously applied.
  • the coating is more convenient to operate, and the photoresist on the non-opening area of the open mask 5 also shields the mask material for evaporation deposited in the subsequent step, thereby avoiding the deposition of the mask material for evaporation on the open mask.
  • the photoresist on the non-opening area only needs to be prepared after the pattern of the non-hollowed portion of the vapor deposition mask, for example, the grid structure can be removed, and the The pattern of the hollow portion, for example, the formation of a mesh structure has an influence.
  • the step of patterning the photoresist 6 may include the steps of exposing and developing the photoresist 6. Please continue to refer to 2c and FIG. 3c. While removing the non-hollowed portion pattern, for example, the photoresist at the line position of the grid structure, at least part of the space between the edge of the non-hollowed portion pattern and the side wall of the opening is removed.
  • Photoresist so that there is a gap between at least a part of the edge of the non-hollowed portion pattern and the side wall of the opening area; for example, the ring between the edge of the non-hollowed portion pattern and the side wall of the opening is removed at the same time
  • a photoresist so that there is a gap between the edge of the non-hollowed-out pattern and the sidewall of the opening region.
  • the area of the hollow portion pattern 7 'of the formed photoresist layer is smaller than the area of the opening area BB, and at least a part of the edge of the hollow portion pattern 7' of the photoresist layer has a side wall h with the opening area BB.
  • the gap d is shown in the figure: there is a gap d between all edges of the hollow portion pattern 7 ′ of the photoresist layer and the side wall h of the opening region BB.
  • the masking material for evaporation can be deposited in the gap d in a subsequent step to form a connection structure connecting the edge and the sidewall, for example, the patterned edge of the non-hollow portion of the masking material for evaporation and
  • a ring-shaped connection structure surrounding the pattern is formed between the sidewalls of the opening, that is, a circle structure, so that the non-hollowed-out pattern of the produced masking plate for vapor deposition, such as a grid structure, is passed through the connection structure, such as The structure of this circle is in contact with the side wall h of the opening area BB, so that the non-hollowed-out portion pattern of the produced mask plate for evaporation, such as the stress on the grid structure, is more uniform.
  • edge of the hollow portion pattern 7 ′ of the photoresist layer (corresponding to the non-hollow portion pattern 7 of the mask for vapor deposition) described in this embodiment specifically refers to the edge of the mask for vapor deposition.
  • the shape of the pattern area CC of the grid structure is approximately the same as the shape of the opening area BB, and the size of the pattern area CC of the grid structure is smaller than A size d of the opening region BB has a gap d between an edge of the pattern region CC of the grid structure and a sidewall h of the opening region BB.
  • the non-hollowed portion pattern of the vapor deposition mask may be partially connected to the side wall of the opening through a connection structure, and the remaining edges are connected to the side wall of the opening by the non-hollowed portion pattern of the vapor deposition mask.
  • the non-hollowed-out pattern of the masking plate for vapor deposition is all connected to the side wall of the opening through the connection structure, which is not limited in the embodiment of the present disclosure, as long as the pattern of the masking plate for vapor deposition can be stably supported.
  • the open mask 5 in order to facilitate the coating operation of the photoresist 6, before the photoresist 6 is applied, the open mask 5 can be placed on the base 9 so that the base 9 can support the open mask.
  • the thickness of the formed photoresist layer 6 actually determines the pattern of the non-hollowed portion of the subsequently formed evaporation mask, for example, the thickness of the mesh structure.
  • the thickness of the scoring layer 6 ' can be set according to the actual needs of the pattern, for example, the thickness of the grid structure.
  • the thickness of the photoresist layer 6 ′ is equal to the thickness of the open mask 5. In this way, the pattern of the non-hollowed portion of the subsequently formed evaporation mask, for example, the thickness of the grid structure can be equal to the thickness of the open mask 5.
  • the thickness of the photoresist layer 6 ′ is smaller than the thickness of the open mask 5, and one surface of the photoresist layer 6 ′ is flush with one surface of the open mask 5, for example, a photoresist layer 6 'The surface facing away from the abutment 9 is flush with the surface of the open mask plate 5 facing away from the abutment 9 so that the net-like structure of the subsequently formed evaporation mask plate is flush with the surface of the open mask plate 5 To ensure that the mesh structure and the open mask 5 can closely adhere to the substrate to be evaporated during evaporation. Further exemplarily, the thickness of the photoresist layer 6 ′ may range from 5 ⁇ m to 30 ⁇ m.
  • the thickness of the photoresist layer 6 ′ is smaller than the thickness of the open mask 5
  • it can be set at a position corresponding to the opening area BB on the base 9.
  • the protrusions are made, and the height of the protrusions is equal to the difference between the thickness of the open mask 5 and the thickness of the photoresist layer 6 ′ to be produced, so that the required thickness of the photoresist layer 6 ′ can be produced.
  • the “thickness” described in this embodiment refers to a dimension of a corresponding component or object in a direction perpendicular to the plane where the open mask 5 is located.
  • a material of a vapor deposition mask is deposited in a region where the photoresist layer is formed to form a pattern of a non-hollow portion of the vapor deposition mask, wherein the non-hollow
  • the partial pattern is connected to a side wall of the open region at an edge.
  • a pattern of a non-hollowed portion of the vapor deposition mask plate is deposited in the opening area BB, for example, a material of a grid structure to form a pattern of a non-holed portion of the vapor deposition mask plate.
  • the non-hollowed-out pattern for example, the edges of the grid structure 7 and the side wall h of the opening area BB where the grid structure 7 is located are integrated into a unitary structure.
  • a pattern of a non-hollowed portion of the mask for vapor deposition is deposited in the opening area BB.
  • the material of the grid structure may be an electroforming deposition process.
  • the open mask 5, the photoresist layer 6 ′, and the support frame 11 may be sunk into the electroforming solution together with the abutment 9 below the open mask 5.
  • Perform electroforming After the electroforming is completed, the abutment 9 is raised, and the open mask 5, the photoresist layer 6 ′, and the support frame 11 come out of the electroforming solution.
  • the deposited non-hollow portion pattern for example, the thickness of the mesh structure 7 may be the same as the thickness of the photoresist layer 6 '.
  • the grid structure 7 is naturally formed in the opening area BB by electroforming deposition, so the grid structure 7 is naturally connected to the side wall h of the opening area BB into an integrated structure, and compared with Through the FMM unit grid structure provided by the Zhang net, the naturally formed non-hollowed-out portion pattern in this embodiment, for example, the uniformity of the force on the grid structure 7 is greatly improved, so that the display area of the mask plate for vapor deposition is increased.
  • the manufacturing method of the mask for vapor deposition disclosed in this embodiment is particularly applicable to the manufacture of masks for irregularly shaped or high PPI vapor deposition.
  • step S3 If the photoresist layer pattern is removed at the same time during the patterning of the photoresist, for example, a circle around the hollow pattern 7 'of the photoresist layer Photoresist so that there is a gap d between the edge of the hollow portion pattern 7 'of the photoresist layer and the side wall h of the opening area BB, in step S3, the material of the grid structure of the mask for vapor deposition is deposited It is also deposited in the gap d, thereby forming a circle structure around the grid structure 7, which can be referred to as a "connection circle 8".
  • the existence of the connecting ring 8 connects the edge of the grid structure 7 and the side wall h of the opening area BB of the open mask plate 5 to form an integrated structure, so that the grid structure 7 and the open mask plate 5 are in an integrated structure.
  • the combination is more reliable, and the uniformity of the force on the grid structure 7 and the accuracy of the pixel position are further improved.
  • the photoresist at the non-hollowed-out pattern for example, the line position of the grid structure
  • at least part of the photoresist between the edge of the non-holed-out pattern and the sidewall of the opening is removed. Therefore, there is a gap between at least a portion of the edge of the non-hollow portion pattern and the sidewall of the opening region.
  • the “non-hollowed-out pattern of the masking plate for vapor deposition, for example, a material of a grid structure” described in this embodiment may be any Invar or metal nickel (Ni), which can be used to make a masking plate for vapor deposition.
  • Grid structure material any Invar or metal nickel (Ni), which can be used to make a masking plate for vapor deposition.
  • the method may further include step S4: removing the photoresist layer 6 'to obtain a desired mask for evaporation having the pattern of the non-hollowed portion.
  • the photoresist layer 6 ' can be removed by using a process such as peeling or ashing.
  • this embodiment also provides a mask for vapor deposition.
  • the mask for vapor deposition is manufactured by using the above manufacturing method, as shown in FIGS. 2e and 3e.
  • the mask includes: an open mask 5 having at least one open area BB; at least one non-hollowed portion pattern 7 of a vapor deposition mask, the non-hollowed portion pattern 7 of the at least one vapor deposition mask corresponds one-to-one Is located in the at least one opening area, and the non-hollowed-out pattern is connected to a side wall h of the opening area where it is located at an edge.
  • the pattern of the non-hollowed portion of the vapor deposition mask is a grid structure including horizontal and vertical crossing lines.
  • At least one grid structure 7 is located in each of the opening regions BB in a one-to-one correspondence, and the edge of the grid structure 7 is connected to the side wall h of the opening region BB where the grid structure 7 is located to form an integrated structure.
  • the grid structure 7 is formed by directly depositing a grid structure material in the opening area BB of the open mask plate 5, the grid structure 7 is integrated with the sidewall h of the opening area BB. Structure, the uniformity of the force on the grid structure 7 is good, no wrinkles will appear in the display area, and the pixel position accuracy is high, so that it can effectively prevent the problems of color mixing of the vapor-emitting light-emitting layer.
  • an area of the non-hollowed-out portion pattern of the mask for vapor deposition is smaller than an area of the opening.
  • connection structure connecting the edge and the side wall is provided between at least a part of the edge of the evaporation mask and a side wall of the opening.
  • the above-mentioned evaporation mask may further include a connection structure between the side wall h of the opening area BB and the edge of the grid structure 7, for example, a connection ring 8, the side wall h of the opening area BB and the grid structure 7
  • the edges of the grid structure 7 are connected by the connecting ring 8, and the three are formed into an integrated structure, so that the grid structure 7 can be more reliably fixed in the opening area BB of the open mask plate 5, and the uniformity of the force and the pixels of the grid structure 7 Position accuracy has been further improved.
  • the width of the connection structure may be 0.1 mm to 20 mm.
  • the materials of the open mask 5, the grid structure 7, and the connection structure 8 may include any material that can be used to make the vapor deposition mask, such as Invar and nickel.
  • the thickness of the mesh structure 7 and the connection ring 8 may be equal to or smaller than the thickness of the open mask plate 5, which is not limited in this embodiment.
  • the grid structure 7 and the connecting ring 8 can be directly formed in the opening area BB of the open mask 5 by an electroforming deposition process, so that the grid structure 7 and the connecting ring 8 are directly combined with the open mask 5. Become an integrated structure.
  • the mask for vapor deposition in this embodiment may further include a support frame 11 disposed on a side of the open mask 5 (specifically, a side of the open mask 5 facing away from the substrate to be vapor-deposited).
  • the frame 11 is in contact with the side of the open mask 5 and supports the open mask 5 and enhances the mechanical strength of the entire mask for vapor deposition.
  • the supporting frame 11 may be a metal frame.
  • a photoresist layer having a pattern of a hollow portion of the vapor deposition mask in an open area of an open mask by forming a photoresist layer having a pattern of a hollow portion of the vapor deposition mask in an open area of an open mask, Then, the material of the vapor deposition mask is deposited directly to form a non-hollowed portion pattern of the vapor deposition mask.
  • the non-hollowed portion pattern of the formed vapor deposition mask such as a grid structure, is naturally connected to the opening of the open mask.
  • the pattern of the non-hollowed portion of the evaporation mask with a mask for evaporation is avoided, and the pattern of the non-hollowed portion of the mask for evaporation caused by the process of stretching is avoided.
  • the problem of uneven force on the grid structure makes the pattern of the non-hollow portion of the vapor deposition mask of the vapor deposition mask formed, for example, the force is uniformly applied everywhere on the grid structure, so that the vapor deposition mask is used.
  • Wrinkles do not appear in the display area of the template, or the wrinkle phenomenon is reduced, and the positional accuracy of the grid structure in the evaporation mask is improved, which improves the quality of the evaporation mask, and thus helps to improve the evaporation The quality of the luminescent layer.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as “first” and “second” may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of “plurality” is two or more, unless specifically defined otherwise.
  • Any process or method description in a flowchart or otherwise described herein can be understood as representing a module, fragment, or portion of code that includes one or more executable instructions for implementing a particular logical function or step of a process
  • the scope of the preferred embodiments of the present invention includes additional implementations in which the functions may be performed out of the order shown or discussed, including performing the functions in a substantially simultaneous manner or in the reverse order according to the functions involved, which should It is understood by those skilled in the art to which the embodiments of the present invention pertain.
  • a sequenced list of executable instructions that can be considered to implement a logical function can be embodied in any computer-readable medium,
  • the instruction execution system, device, or device such as a computer-based system, a system including a processor, or other system that can fetch and execute instructions from the instruction execution system, device, or device), or combine these instruction execution systems, devices, or devices Or equipment.
  • a "computer-readable medium” may be any device that can contain, store, communicate, propagate, or transmit a program for use by or in connection with an instruction execution system, apparatus, or device.
  • computer readable media include the following: electrical connections (electronic devices) with one or more wirings, portable computer disk cartridges (magnetic devices), random access memory (RAM), Read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disk read-only memory (CDROM).
  • the computer-readable medium may even be paper or other suitable medium on which the program can be printed, because, for example, by optically scanning the paper or other medium, followed by editing, interpretation, or other suitable Processing to obtain the program electronically and then store it in computer memory.
  • each part of the present invention may be implemented by hardware, software, firmware, or a combination thereof.
  • multiple steps or methods may be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system.
  • a suitable instruction execution system For example, if implemented in hardware, as in another embodiment, it may be implemented using any one or a combination of the following techniques known in the art: Discrete logic circuits, application specific integrated circuits with suitable combinational logic gate circuits, programmable gate arrays (PGA), field programmable gate arrays (FPGA), etc.
  • a person of ordinary skill in the art can understand that all or part of the steps carried by the methods in the foregoing embodiments may be implemented by a program instructing related hardware.
  • the program may be stored in a computer-readable storage medium.
  • the program is When executed, one or a combination of the steps of the method embodiment is included.
  • each functional unit in each embodiment of the present invention may be integrated into one processing module, or each unit may exist separately physically, or two or more units may be integrated into one module.
  • the above integrated modules can be implemented in the form of hardware or software functional modules. If the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may also be stored in a computer-readable storage medium.
  • the aforementioned storage medium may be a read-only memory, a magnetic disk, or an optical disk.

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Abstract

一种蒸镀用掩模板的制作方法，包括：提供开放式掩模板(5)，开放式掩模板(5)上具有至少一个开口区(BB)；至少在开口区(BB)内形成光刻胶层(6')，在开口区(BB)内光刻胶层(6')图案的至少一部分与蒸镀用掩模板的镂空部图案(7')相同；在形成有光刻胶层(6')的区域沉积蒸镀用掩模板的材料，用以形成蒸镀用掩模板的非镂空部图案(7)，其中非镂空部图案(7)在边缘处连接到开口区(BB)的侧壁(h)。还公开了一种蒸镀用掩膜板。

Description

蒸镀用掩模板的制作方法及蒸镀用掩模板 技术领域
本公开涉及一种蒸镀用掩模板的制作方法及蒸镀用掩模板。
背景技术
OLED显示面板由于具有自发光、高亮度、高对比度、低工作电压、可制作柔性显示等特点，被称为最有应用前景的显示器件。OLED显示面板作为自发光的显示器件，为了提高显示的色域、对比度及亮度效率，往往采用独立的子像素发光层实现彩色显示，如红(R)色子像素采用能够发红光的发光层，绿(G)色子像素采用能够发绿光的发光层，蓝(B)色子像素采用能够发蓝光的发光层。
蒸镀独立的子像素发光层时需要使用FMM(Fine Metal Mask，精密金属掩模板)，FMM的质量，如FMM的受力均匀性、网格结构的位置精度等，直接决定了发光层的蒸镀质量，进而对显示效果产生影响。因此提高FMM的质量对于提升显示面板的品质至关重要。
发明内容
本公开实施例提供一种蒸镀用掩模板的制作方法及蒸镀用掩模板，以提高蒸镀用掩模板的质量。
第一方面，本公开实施例提供了一种蒸镀用掩模板的制作方法，所述制作方法包括：提供开放式掩模板，所述开放式掩模板上具有至少一个开口区；至少在所述开口区内形成光刻胶层，在所述开口区内所述光刻胶层图案至少部分与所述蒸镀用掩模板的镂空部图案相同；在形成有所述光刻胶层的区域沉积蒸镀用掩模板的材料，用以形成所述蒸镀用掩模板的非镂空部图案，其中所述非镂空部图案在边缘处连接到所述开口区的侧壁。
可选地，所述制作方法，还包括：去除所述光刻胶层，从而获得具有所述非镂空部图案的蒸镀用掩模板。
可选地，在所述开放式掩模板的形成有光刻胶层的一侧沉积蒸镀用掩模板的材料包括：采用电铸沉积工艺沉积所述蒸镀用掩模板的材料。
可选地，所述在所述开口区内形成光刻胶层，包括：在所述开口区内涂 覆光刻胶；图案化所述光刻胶，去除所述非镂空部图案的线条位置处的光刻胶。
可选地，所述蒸镀用掩模板的非镂空部图案面积小于所述开口区的面积。
可选地，所述制作方法还包括：在去除所述非镂空部图案的线条位置处的光刻胶的同时，还去除所述非镂空部图案边缘与所述开口的侧壁之间至少部分的光刻胶，从而所述非镂空部图案的边缘的至少部分与所述开口区的侧壁之间具有间隙。
可选地，在去除所述非镂空部图案的线条位置处的光刻胶的同时，还去除所述非镂空部图案边缘与所述开口的侧壁之间至少部分的光刻胶包括：去除所述非镂空部图案边缘与所述开口的侧壁之间环状的光刻胶，从而所述非镂空部图案的边缘与所述开口区的侧壁之间均具有间隙。
可选地，所述光刻胶层的厚度等于所述开放式掩模板的厚度；或者，
所述光刻胶层的厚度小于所述开放式掩模板的厚度，且所述光刻胶层的一个表面与所述开放式掩模板的一个表面齐平。
可选地，所述光刻胶层还覆盖所述开放式掩模板的非开口区。
可选地，所述在所述开口区内形成光刻胶层的步骤之前，包括：将所述开放式掩模板放置于基台上，使所述基台承托所述开口区。
可选地，所述蒸镀用掩模板的非镂空部图案为包括横纵交叉线条的网格结构。
可选地，当仅在所述开口区内形成光刻胶层时，在形成有所述光刻胶层的区域沉积蒸镀用掩模板的材料包括：遮挡所述非开口区，从而在形成有所述光刻胶层的区域沉积蒸镀用掩模板的材料。
第二方面，本公开实施例提供了一种蒸镀用掩模板，所述蒸镀用掩模板采用如第一方面所述的制作方法制作，所述蒸镀用掩模板包括：开放式掩模板，其具有至少一个开口区；至少一个蒸镀用掩模板的非镂空部图案，所述至少一个蒸镀用掩模板的非镂空部图案一一对应的位于所述至少一个开口区内，且所述非镂空部图案在边缘处与其所在的开口区的侧壁连接。
可选地，所述蒸镀用掩模板的非镂空部图案的面积小于所述开口的面积。
可选地，至少部分所述蒸镀用掩模板的边缘与所述开口的侧壁之间设置 有连接所述边缘与所述侧壁的连接结构。
可选地，所述蒸镀用掩模板的非镂空部图案边缘与所述开口的侧壁之间具有围绕所述非镂空部图案的环状连接结构。
可选地，所述连接结构的宽度为0.1mm～20mm。
可选地，所述开放式掩模板、所述非镂空部图案和所述连接结构的材料包括因瓦合金和/或金属镍。
可选地，所述非镂空部图案和所述连接结构的厚度等于或小于所述开放式掩模板的厚度。
可选地，所述蒸镀用掩模板的非镂空部图案为包括横纵交叉线条的网格结构。
可选地，所述蒸镀用掩模板还包括：设置于所述开放式掩模板的一侧的支撑框架，所述支撑框架与所述开放式掩模板的侧边相接，用于支撑所述开放式掩模板。
附图说明
本公开的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：
图1a～图1d为一种示例性FMM的张网方式的示意图；
图2a～图2e为本公开实施例所提供的蒸镀用掩模板的制作方法的步骤示意图；
图3a～图3e为图2a～图2e分别沿虚线aa＇的截面结构图。
附图标记说明：
1-金属框架；                     2-遮蔽条；
3-支撑条；                       4-FMM单元；
AA-显示区；                      5-开放式掩模板；
51-夹具槽；                      BB-开口区；
6-光刻胶；                       6＇-光刻胶层；
7＇-光刻胶层的镂空部图案；       d-间隙；
7-蒸镀用掩模板的非镂空部图案；   8-连接结构；
9-基台；                         10-胶嘴；
11-支撑框架；                    CC-非镂空部图案区域。
具体实施方式
下面详细描述本发明的实施例，实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
为使本公开的上述目的、特征和优点能够更加明显易懂，下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其它实施例，均属于本公开保护的范围。
FMM的质量，如FMM的受力均匀性、网格结构的位置精准度等，直接决定了发光层的蒸镀质量。如图1a～1d所示，FMM的制作方法大致为：在一个金属框架(Frame)1上依次焊接遮蔽条(Cover)2、支撑条(Howling)3和长条状的具有网格结构的FMM单元4，形成一套FMM。其中，焊接FMM单元4的步骤称为张网，张网实际上是一个将FMM单元4展开并绷紧的过程。
随着显示面板PPI(Pixels Per Inch，每英寸所拥有的像素数目)的提升及异形显示面板的发展，在制作高PPI或异形FMM时，张网过程中FMM容易出现受力不均的问题，造成FMM的显示区AA出现褶皱，从而导致蒸镀出来的不同颜色的发光层出现混色不良。尤其是对于异形显示面板，例如四角为圆角的显示面板，或者其他不规则形状的显示面板，由于形状的不规则，FMM的显示区更易出现褶皱问题。
例如，制作异形显示面板的FMM通常采用如下两种方式：
方式1：在制作FMM单元时，在需要倒圆角或者制作不规则图形的区域制作不刻蚀或者半刻蚀的Dummy(虚设)结构。这种方式的制作成本较高，且由于不规则结构的存在，导致张网时FMM单元不同位置出存在应力差异，张网难度加大，随着像素分辨率的提高，对像素位置精度(Pixel Position Accuracy，PPA)的要求越来越高，非常容易造成混色等不良。
方式2：利用遮蔽条和支撑条在FMM中阻挡出需要的异形显示面板的外围轮廓。这种方式对显示面板的位置精度提出了很高的要求，也非常容易造 成混色等不良。
本公开实施例提供一种蒸镀用掩模板的制作方法，如图2a～图2e、图3a～图3e所示，该制作方法包括如下步骤：
S1：参见图2a和图3a，提供开放式掩模板5，该开放式掩模板5上具有至少一个开口区BB。
开放式掩模板5上开口区BB的尺寸和面积可等于或略大于待形成的蒸镀用掩模板的非镂空部图案，例如，网格结构的整体尺寸和面积。开放式掩模板5的材料可为进行发光层蒸镀用掩模板的材料，例如可为因瓦合金(Invar)或金属镍(Ni)等。
开放式掩模板5的边缘设置有数个夹具槽51，在利用包含开放式掩模板5的蒸镀用掩模板进行蒸镀时，会有夹具夹持待蒸镀基板的边缘使其与开放式掩模板5贴合，夹具槽51能够容纳夹持待蒸镀基板的夹具，使待蒸镀基板与开放式掩模板5紧密地贴合。
开放式掩模板5的下表面(称开放式掩模板5中与待蒸镀基板相贴合的表面为上表面，以上表面相对的一面为下表面)还可设置支撑框架11，该支撑框架11与开放式掩模板5的下表面的边缘相接，用于支撑开放式掩模板5。
S2：参见图2b、图2c、图3b和图3c，至少在开放式掩模板5的各开口区BB内形成光刻胶层6＇，在所述开口区内所述光刻胶层6＇至少具有与所述蒸镀用掩模板的非镂空部图案相同的光刻胶层的镂空部图案7＇。
例如，上述步骤S2可包括：
S21：在开放式掩模板5的开口区BB内涂覆光刻胶6，如图2b和图3b所示。
涂覆时可采用胶嘴10仅在开口区BB内进行涂覆；也可在开放式掩模板5的开口区BB和非开口区上均统一涂覆光刻胶，这样胶嘴10可以进行连续涂覆，操作起来更加便捷，并且开放式掩模板5的非开口区上的光刻胶还遮挡后续步骤中沉积的蒸镀用掩模板材料，从而避免蒸镀用掩模板材料沉积在开放式掩模版5的非开口区上，此外，非开口区上的光刻胶只需在制作完蒸镀用掩模板的非镂空部图案，例如，网格结构后进行去除即可，并不会对非镂空部图案，例如，网格结构的形成产生影响。
S22：图案化光刻胶6，去除非镂空部图案，例如，网格结构的线条位置处的光刻胶，得到具有蒸镀用掩模板的非镂空部图案的镂空部图案7＇的光 刻胶层6＇，如图2c和图3c所示。
图案化光刻胶6的步骤可包括对光刻胶6进行曝光和显影的步骤。请继续参见2c和图3c，在去除非镂空部图案，例如，网格结构的线条位置处的光刻胶的同时，所述非镂空部图案边缘与所述开口的侧壁之间至少部分的光刻胶，从而所述非镂空部图案的边缘的至少部分与所述开口区的侧壁之间具有间隙；例如，同时去除所述非镂空部图案边缘与所述开口的侧壁之间环状的光刻胶，从而所述非镂空部图案的边缘与所述开口区的侧壁之间均具有间隙。这样，所形成的光刻胶层的镂空部图案7＇的面积小于开口区BB的面积，且光刻胶层的镂空部图案7＇的至少部分边缘与开口区BB的侧壁h之间具有间隙d，图中示出的是：光刻胶层的镂空部图案7＇的所有边缘与开口区BB的侧壁h之间均具有间隙d。这样能够使得后续步骤中蒸镀用掩模板材料能够沉积在间隙d中，而形成连接所述边缘与所述侧壁的连接结构，例如，所述蒸镀用掩模板的非镂空部图案边缘与所述开口的侧壁之间形成围绕所述图案的环状连接结构，即，一圈结构，从而所制作的蒸镀用掩模板的非镂空部图案，例如网格结构，通过连接结构，例如，该一圈的结构与开口区BB的侧壁h相接，使得所制作的蒸镀用掩模板的非镂空部图案，例如网格结构上的受力更加均匀。
需要说明的是，本实施例中所述的“光刻胶层的镂空部图案7＇(对应于蒸镀用掩模板的非镂空部图案7)的边缘”具体是指蒸镀用掩模板的非镂空部图案7所对应的完整的连续区域的边缘。该连续区域在图2c和图3c中用CC标示，从图中能够明显看出，网格结构的图案区域CC的形状与开口区BB的形状大略一致，网格结构的图案区域CC的尺寸小于开口区BB的尺寸，网格结构的图案区域CC的边缘与开口区BB的侧壁h之间具有间隙d。
例如，该蒸镀用掩模板的非镂空部图案可以部分侧边通过连接结构与开口的侧壁连接，而其余边缘通过蒸镀用掩模板的非镂空部图案自身连接到所述开口的侧壁；或者，蒸镀用掩模板的非镂空部图案全部通过连接结构连接到开口的侧壁，本公开的实施例并不对此进行限制，只要能够稳固支撑蒸镀用掩模板的图案即可。
在上述步骤S2中，为了便于光刻胶6的涂覆操作，可在涂覆光刻胶6之前，将开放式掩模板5放置于基台9上，使基台9承托开放式掩模板5所述的开口区BB。
并且，在上述步骤S2中，所形成的光刻胶层6＇的厚度实际上决定了后续形成的蒸镀用掩模板的非镂空部图案，例如，网格结构的厚度，因此所形成的光刻胶层6＇的厚度可根据实际对图案，例如，网格结构的厚度的需要进行设定。示例性的，光刻胶层6＇的厚度等于开放式掩模板5的厚度，这样后续形成的蒸镀用掩模板的非镂空部图案，例如，网格结构的厚度能够等于开放式掩模板5的厚度；或者，光刻胶层6＇的厚度小于开放式掩模板5的厚度，且光刻胶层6＇的一个表面与开放式掩模板5的一个表面齐平，例如是光刻胶层6＇背向基台9的表面与开放式掩模板5的背向基台9的表面齐平，从而使得后续形成的蒸镀用掩模板的网状结构与开放式掩模板5的表面齐平，保证蒸镀时网状结构和开放式掩模板5能够与待蒸镀基板紧密贴合。进一步示例性的，光刻胶层6＇的厚度的范围具体可为5μm～30μm。
需要说明的是，对于上述光刻胶层6＇的厚度小于开放式掩模板5的厚度的情形，在制作该光刻胶层6＇时，可以在基台9上对应开口区BB的位置设置凸起，并使凸起的高度等于开放式掩模板5与所要制作的光刻胶层6＇的厚度之差，即可实现所需厚度的光刻胶层6＇的制作。
此外，本实施例中所述的“厚度”是指相应部件或物体在垂直于开放式掩模板5所在平面的方向上的尺寸。
S3：参见图2d和图3d，在形成有所述光刻胶层的区域沉积蒸镀用掩模板的材料，用以形成所述蒸镀用掩模板的非镂空部图案，其中所述非镂空部图案在边缘处连接到所述开口区的侧壁。例如，以光刻胶层6＇为掩模，在开口区BB内沉积蒸镀用掩模板的非镂空部图案，例如，网格结构的材料，形成蒸镀用掩模板的非镂空部图案，例如，网格结构7，该非镂空部图案，例如，网格结构7的边缘与其所在的开口区BB的侧壁h连接成为一体结构。
在上述步骤中，在开口区BB内沉积蒸镀用掩模板的非镂空部图案，例如，网格结构的材料可采用电铸沉积工艺。示例性的，进行电铸沉积时，可将开放式掩模板5、光刻胶层6＇、支撑框架11，连同开放式掩模板5下方的基台9一并下沉至电铸溶液中，进行电铸。电铸完成后，使基台9上升，开放式掩模板5、光刻胶层6＇、支撑框架11随之从电铸溶液中出来。所沉积的非镂空部图案，例如，网格结构7的厚度可与光刻胶层6＇的厚度相同。
上述步骤中，由于非镂空部图案，例如，网格结构7由电铸沉积自然形成于开口区BB内，因此网格结构7自然与开口区BB的侧壁h连接成为一体 结构，且相比通过张网设置的FMM单元网格结构，本实施例中的自然形成的非镂空部图案，例如，网格结构7上的受力均匀性得到极大提高，从而蒸镀用掩模板的显示区中不会出现褶皱，或者褶皱现象减轻，且蒸镀用掩模板中非镂空部图案，例如，网格结构的像素位置精度提高，提高了蒸镀用掩模板的质量，进而有助于提高所蒸镀的发光层的质量。本实施例中所公开的蒸镀用掩模板的制作方法特别适用于异形不规则形状或高PPI蒸镀用掩模板的制作。
需要说明的是，请再次参见2d和图3d，若在图案化光刻胶的过程中，同时去除了光刻胶层的图案，例如，光刻胶层的镂空部图案7＇周边一圈区域的光刻胶，使得光刻胶层的镂空部图案7＇的边缘与开口区BB的侧壁h之间具有间隙d，则在上述步骤S3中，蒸镀用掩模板的网格结构的材料也会沉积在该间隙d中，从而形成围绕网格结构7的一圈结构，可称之为“连接圈8”。连接圈8的存在，连接了网格结构7的边缘与开放式掩模板5的开口区BB的侧壁h，三者形成为一体结构，从而使得网格结构7与开放式掩模板5之间的结合更加牢靠，并且进一步提高了网格结构7上的受力均匀性和像素位置精度。
例如，在去除非镂空部图案，例如，网格结构的线条位置处的光刻胶的同时，所述非镂空部图案边缘与所述开口的侧壁之间至少部分的光刻胶被去除，从而所述非镂空部图案的边缘的至少部分与所述开口区的侧壁之间具有间隙。
本实施例中所述“蒸镀用掩模板的非镂空部图案，例如，网格结构的材料”可为因瓦合金(Invar)或金属镍(Ni)等任何可用于制作蒸镀用掩模板的网格结构的材料。
如图2e和图3e所示，在步骤S3之后，还可包括步骤S4：去除光刻胶层6＇，得到所需要的具有所述非镂空部图案的蒸镀用掩模板。其中，去除光刻胶层6＇可采用剥离、灰化等工艺。
基于上述蒸镀用掩模板的制作方法，本实施例还提供了一种蒸镀用掩模板，该蒸镀用掩模板采用上述制作方法制作，如图2e和图3e所示，该蒸镀用掩模板包括：开放式掩模板5，其具有至少一个开口区BB；至少一个蒸镀用掩模板的非镂空部图案7，所述至少一个蒸镀用掩模板的非镂空部图案7一一对应的位于所述至少一个开口区内，且所述非镂空部图案在边缘处与其 所在的开口区的侧壁h连接。
所述蒸镀用掩模板的非镂空部图案为包括横纵交叉线条的网格结构。
例如，至少一个网格结构7，各网格结构7一一对应的位于各开口区BB内，且网格结构7的边缘与其所在的开口区BB的侧壁h连接成为一体结构。
在上述蒸镀用掩模板中，由于网格结构7为在开放式掩模板5的开口区BB内直接沉积网格结构材料形成的，网格结构7与开口区BB的侧壁h形成为一体结构，因此网格结构7上的受力均匀性较好，不会在显示区出现褶皱，并且像素位置精度较高，从而可有效预防所蒸镀的发光层的混色等不良问题。
例如，其中所述蒸镀用掩模板的非镂空部图案的面积小于所述开口的面积。
例如，至少部分所述蒸镀用掩模板的边缘与所述开口的侧壁之间设置有连接所述边缘与所述侧壁的连接结构。
例如，上述蒸镀用掩模板还可包括位于开口区BB的侧壁h与网格结构7的边缘之间的连接结构，例如，连接圈8，开口区BB的侧壁h与网格结构7的边缘通过该连接圈8连接，三者形成为一体结构，从而网格结构7能够更加牢靠的固定于开放式掩模板5的开口区BB内，并且网格结构7的受力均匀性和像素位置精度得以进一步提升。
作为一种可能的设计，连接结构的宽度可为0.1mm～20mm。
上述蒸镀用掩模板中，开放式掩模板5、网格结构7和连接结构8的材料可包括因瓦合金、金属镍等任何可用于制作蒸镀用掩模板的材料。
另外，网格结构7和连接圈8的厚度可等于或小于开放式掩模板5的厚度，本实施例对此并不限定。
本实施例中，网格结构7及连接圈8可采用电铸沉积工艺直接形成于开放式掩模板5的开口区BB内，使得网格结构7及连接圈8与开放式掩模板5直接结合成为一体结构。
本实施例中的蒸镀用掩模板还可包括：设置于开放式掩模板5的一侧(具体是开放式掩模板5的背向待蒸镀基板的一侧)的支撑框架11，该支撑框架11与开放式掩模板5的侧边相接，用于支撑开放式掩模板5，增强蒸镀用掩模板整体的机械强度。该支撑框架11具体可为金属框架。
本公开实施例的提供的蒸镀用掩模板的制作方法以及蒸镀用掩模板中，通过在开放式掩模板的开口区内形成具有蒸镀用掩模板的镂空部图案的光刻 胶层，然后沉积蒸镀用掩模板的材料直接形成蒸镀用掩模板的非镂空部图案，所形成的蒸镀用掩模板的非镂空部图案，例如网格结构自然与开放式掩模板的开口相接，从而避免了对具有蒸镀用掩模板的非镂空部图案，例如，网格结构的FMM单元的张网过程，也就避免了张网过程所引起的蒸镀用掩模板的非镂空部图案，例如，网格结构受力不均匀问题，使得所形成的蒸镀用掩模板的蒸镀用掩模板的非镂空部图案，例如，网格结构上各处受力均匀，从而蒸镀用掩模板的显示区中不会出现褶皱，或者褶皱现象减轻，且蒸镀用掩模板中网格结构的位置精度提高，提高了蒸镀用掩模板的质量，进而有助于提高所蒸镀的发光层的质量。
以上所述仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
流程图中或在此以其他方式描述的任何过程或方法描述可以被理解为，表示包括一个或更多个用于实现特定逻辑功能或过程的步骤的可执行指令的代码的模块、片段或部分，并且本发明的优选实施方式的范围包括另外的实现，其中可以不按所示出或讨论的顺序，包括根据所涉及的功能按基本同时的方式或按相反的顺序，来执行功能，这应被本发明的实施例所属技术领域的技术人员所理解。
在流程图中表示或在此以其他方式描述的逻辑和/或步骤，例如，可以被认为是用于实现逻辑功能的可执行指令的定序列表，可以具体实现在任何计算机可读介质中，以供指令执行系统、装置或设备(如基于计算机的系统、包括处理器的系统或其他可以从指令执行系统、装置或设备取指令并执行指令的系统)使用，或结合这些指令执行系统、装置或设备而使用。就本说明书而言，"计算机可读介质"可以是任何可以包含、存储、通信、传播或传输程序以供指令执行系统、装置或设备或结合这些指令执行系统、装置或设备而使用的装置。计算机可读介质的更具体的示例(非穷尽性列表)包括以下：具有一个或多个布线的电连接部(电子装置)，便携式计算机盘盒(磁装置)，随机存取存储器(RAM)，只读存储器(ROM)，可擦除可编辑只读存储器(EPROM或闪速存储器)，光纤装置，以及便携式光盘只读存储器(CDROM)。另外，计算机可读介质甚至可以是可在其上打印所述程序的纸或其他合适的介质，因为可以例如通过对纸或其他介质进行光学扫描，接着进行编辑、解译或必要时以其他合适方式进行处理来以电子方式获得所述程序，然后将其存储在计算机存储器中。
应当理解，本发明的各部分可以用硬件、软件、固件或它们的组合来实现。在上述实施方式中，多个步骤或方法可以用存储在存储器中且由合适的指令执行系统执行的软件或固件来实现。例如，如果用硬件来实现，和在另一实施方式中一样，可用本领域公知的下列技术中的任一项或他们的组合来实现：具有用于对数据信号实现逻辑功能的逻辑门电路的离散逻辑电路，具有合适的组合逻辑门电路的专用集成电路，可编程门阵列(PGA)，现场可编程门阵列(FPGA)等。
本技术领域的普通技术人员可以理解实现上述实施例方法携带的全部或部分步骤是可以通过程序来指令相关的硬件完成，所述的程序可以存储于一种计算机可读存储介质中，该程序在执行时，包括方法实施例的步骤之一或其组合。
此外，在本发明各个实施例中的各功能单元可以集成在一个处理模块中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个模块中。上述集成的模块既可以采用硬件的形式实现，也可以采用软件功能模块的形式实现。所述集成的模块如果以软件功能模块的形式实现并作为独立的产品销售或使用时，也可以存储在一个计算机可读取存储介质中。
上述提到的存储介质可以是只读存储器，磁盘或光盘等。尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。
本申请要求于2018年5月31日递交的中国专利申请第201810547816.4号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (22)

  1. 一种蒸镀用掩模板的制作方法，所述制作方法包括：
    提供开放式掩模板，所述开放式掩模板上具有至少一个开口区；
    至少在所述开口区内形成光刻胶层，在所述开口区内所述光刻胶层图案的至少一部分与所述蒸镀用掩模板的镂空部图案相同；
    在形成有所述光刻胶层的所述开口区沉积所述蒸镀用掩模板的材料，用以形成所述蒸镀用掩模板的非镂空部图案，其中所述非镂空部图案在边缘处连接到所述开口区的侧壁。
  2. 根据权利要求1所述的蒸镀用掩模板的制作方法，还包括：
    去除所述光刻胶层，从而获得具有所述非镂空部图案的所述蒸镀用掩模板。
  3. 根据权利要求1所述的蒸镀用掩模板的制作方法，其中在所述开放式掩模板的形成有光刻胶层的一侧沉积蒸镀用掩模板的材料包括：
    采用电铸沉积工艺沉积所述蒸镀用掩模板的材料。
  4. 根据权利要求1所述的蒸镀用掩模板的制作方法，其中所述在所述开口区内形成光刻胶层，包括：
    在所述开口区内涂覆光刻胶；
    图案化所述光刻胶，去除所述非镂空部图案的线条位置处的光刻胶。
  5. 根据权利要求4所述的蒸镀用掩模板的制作方法，其中所述蒸镀用掩模板的非镂空部图案面积小于所述开口区的面积。
  6. 根据权利要求5所述的蒸镀用掩模板的制作方法，还包括：
    在去除所述非镂空部图案的线条位置处的光刻胶的同时，还去除所述非镂空部图案边缘与所述开口的侧壁之间至少部分的光刻胶，从而所述非镂空部图案的边缘的至少部分与所述开口区的侧壁之间具有间隙。
  7. 根据权利要求6所述的蒸镀用掩模板的制作方法，其中在去除所述非镂空部图案的线条位置处的光刻胶的同时，还去除所述非镂空部图案边缘与所述开口的侧壁之间至少部分的光刻胶包括：
    去除所述非镂空部图案边缘与所述开口的侧壁之间环状的光刻胶，从而所述非镂空部图案的边缘与所述开口区的侧壁之间均具有间隙。
  8. 根据权利要求1-7中任一项所述的蒸镀用掩模板的制作方法，其中所述光刻胶层的厚度等于所述开放式掩模板的厚度；或者，
    所述光刻胶层的厚度小于所述开放式掩模板的厚度，且所述光刻胶层的一个表面与所述开放式掩模板的一个表面齐平。
  9. 根据权利要求1-8中任一项所述的蒸镀用掩模板的制作方法，其中所述光刻胶层还覆盖所述开放式掩模板的非开口区。
  10. 根据权利要求1-8中任一项所述的蒸镀用掩模板的制作方法，其中所述在所述开口区内形成光刻胶层的步骤之前，包括：将所述开放式掩模板放置于基台上，使所述基台承托所述开口区。
  11. 根据权利要求1-8中任一项所述的蒸镀用掩模板的制作方法，其中所述蒸镀用掩模板的非镂空部图案为包括横纵交叉线条的网格结构。
  12. 根据权利要求1-8中任一项所述的蒸镀用掩模板的制作方法，其中当仅在所述开口区内形成光刻胶层时，在形成有所述光刻胶层的区域沉积蒸镀用掩模板的材料包括：
    遮挡所述非开口区，从而在形成有所述光刻胶层的区域沉积蒸镀用掩模板的材料。
  13. 一种蒸镀用掩模板，所述蒸镀用掩模板采用如权利要求1-12中任一项所述的制作方法制作，所述蒸镀用掩模板包括：
    开放式掩模板，其具有至少一个开口区；
    至少一个蒸镀用掩模板的非镂空部图案，所述至少一个蒸镀用掩模板的非镂空部图案一一对应的位于所述至少一个开口区内，且所述非镂空部图案在边缘处与其所在的开口区的侧壁连接。
  14. 根据权利要求13所述的蒸镀用掩模板，其中所述蒸镀用掩模板的非镂空部图案的面积小于所述开口的面积。
  15. 根据权利要求14所述的蒸镀用掩模板，其中至少部分所述蒸镀用掩模板的非镂空部图案的边缘与所述开口的侧壁之间设置有连接所述边缘与所述侧壁的连接结构。
  16. 根据权利要求15所述的蒸镀用掩模板，其中所述蒸镀用掩模板的非镂空部图案边缘与所述开口的侧壁之间具有围绕所述图案的环状连接结构。
  17. 根据权利要求15或16所述的蒸镀用掩模板，其中所述连接结构的 宽度为0.1mm～20mm。
  18. 根据权利要求13-17中任一项所述的蒸镀用掩模板，其中所述开放式掩模板、所述非镂空部图案和所述连接结构的材料包括因瓦合金和/或金属镍。
  19. 根据权利要求15或16所述的蒸镀用掩模板，其中所述非镂空部图案和所述连接结构的厚度等于或小于所述开放式掩模板的厚度。
  20. 根据权利要求13-19中任一项所述的蒸镀用掩模板，其中所述蒸镀用掩模板的非镂空部图案为包括横纵交叉线条的网格结构。
  21. 根据权利要求13-19中任一项所述的蒸镀用掩模板，其中所述蒸镀用掩模板还包括：设置于所述开放式掩模板的一侧的支撑框架，所述支撑框架与所述开放式掩模板的侧边相接，用于支撑所述开放式掩模板。
  22. 根据权利要求15所述的蒸镀用掩模板，其中所述开放式掩模板、所述连接结构和所述蒸镀用掩模板的非镂空部图案为一体结构。
PCT/CN2019/077200 2018-05-31 2019-03-06 蒸镀用掩模板的制作方法及蒸镀用掩模板 WO2019228006A1 (zh)

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