WO2019208397A1 - 処理装置及び埋め込み方法 - Google Patents

処理装置及び埋め込み方法 Download PDF

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Publication number
WO2019208397A1
WO2019208397A1 PCT/JP2019/016679 JP2019016679W WO2019208397A1 WO 2019208397 A1 WO2019208397 A1 WO 2019208397A1 JP 2019016679 W JP2019016679 W JP 2019016679W WO 2019208397 A1 WO2019208397 A1 WO 2019208397A1
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film
microwave
gas
etching
gas containing
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English (en)
French (fr)
Japanese (ja)
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稔 本多
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body

Definitions

  • the present disclosure relates to a processing apparatus and an embedding method.
  • Patent Document 1 proposes that a trench isolation structure formed in a substrate is filled with a SiO 2 film using a plasma CVD (Chemical Vapor Deposition) method. Further, for example, there is a step of embedding a SiN film in a space between wirings in order to perform interlayer insulation.
  • a plasma CVD Chemical Vapor Deposition
  • JP 2002-43411 A International Publication No. 2007/139140 Specification Special table 2006-510195 gazette
  • a processing apparatus and a method for embedding a SiN film in a recess formed on a substrate are proposed.
  • a microwave power application unit that applies microwave power to a processing container and a mounting table on which a substrate in the processing container is mounted are configured to generate a bias voltage.
  • a high-frequency power application unit configured to apply high-frequency power; a gas supply unit configured to supply a gas; and a control unit, the control unit configured to generate microwave power and bias voltage based on a predetermined film formation condition.
  • a high frequency power for generation is applied, a gas containing Si, H, and N is supplied to perform a film formation process using microwave plasma, and a gas containing H or H and Ar is added based on a predetermined etching condition.
  • a processing apparatus is provided that controls the filling of a SiN film in a recess formed on a substrate by repeatedly supplying an included gas and performing an etching process using microwave plasma.
  • the SiN film can be embedded in the recess formed on the substrate.
  • the figure which shows an example of the microwave plasma processing apparatus which concerns on one Embodiment. 6 is a flowchart illustrating an example of an embedding (film formation) method according to an embodiment.
  • FIG. 1 shows an example of a cross-sectional view of a microwave plasma processing apparatus 100 according to an embodiment.
  • the microwave plasma processing apparatus 100 includes a processing container 1 that accommodates a wafer W.
  • the microwave plasma processing apparatus 100 is an example of a plasma processing apparatus that performs predetermined plasma processing on the wafer W using surface wave plasma formed on the ceiling surface of the processing container 1 by microwaves. Examples of the predetermined plasma process include a film forming process and an etching process.
  • the microwave plasma processing apparatus 100 includes a processing container 1, a microwave plasma source 2, and a control device 3.
  • the processing container 1 is a substantially cylindrical container made of a metal material such as aluminum or stainless steel, which is airtight, and is grounded.
  • the processing container 1 has a main body 10 and forms a plasma processing space therein.
  • the main body 10 is a disk-shaped top plate that constitutes the ceiling wall of the processing container 1.
  • a support ring 129 is provided on the contact surface between the processing container 1 and the main body 10, and thereby the inside of the processing container 1 is hermetically sealed.
  • the main body 10 is made of a metal material such as aluminum or stainless steel.
  • the microwave plasma source 2 includes a microwave output unit 30, a microwave transmission unit 40, and a microwave radiation mechanism 50.
  • the microwave output unit 30 outputs the microwaves distributed to a plurality of paths.
  • the microwave is introduced into the processing container 1 through the microwave transmission unit 40 and the microwave radiation mechanism 50.
  • the gas supplied into the processing container 1 is excited by the introduced microwave electric field, thereby forming surface wave plasma.
  • a mounting table 11 on which the wafer W is mounted is provided in the processing container 1.
  • the mounting table 11 is supported by a cylindrical support member 12 erected at the center of the bottom of the processing container 1 via an insulating member 12a.
  • Examples of the material constituting the mounting table 11 and the support member 12 include metals such as aluminum whose surfaces are anodized (anodized), and insulating members (ceramics and the like) having high-frequency electrodes therein.
  • the mounting table 11 may be provided with an electrostatic chuck for electrostatically attracting the wafer W, a temperature control mechanism, a gas flow path for supplying a heat transfer gas to the back surface of the wafer W, and the like.
  • a high frequency bias power source 14 is connected to the mounting table 11 via a matching unit 13.
  • a high frequency power for generating a bias voltage (hereinafter referred to as “high frequency power”) is supplied from the high frequency bias power source 14 to the mounting table 11.
  • the high-frequency power for generating the bias voltage is also expressed as RF Bias Power or RF. Thereby, plasma ions are attracted to the wafer W side.
  • the high frequency bias power supply 14 is an example of a high frequency power application unit that applies high frequency power to the mounting table 11.
  • An exhaust pipe 15 is connected to the bottom of the processing vessel 1, and an exhaust device 16 including a vacuum pump is connected to the exhaust pipe 15.
  • an exhaust device 16 including a vacuum pump is connected to the exhaust pipe 15.
  • the inside of the processing container 1 is evacuated, whereby the inside of the processing container 1 is decompressed at a high speed to a predetermined degree of vacuum.
  • a loading / unloading port 17 for loading and unloading the wafer W and a gate valve 18 for opening and closing the loading / unloading port 17 are provided on the side wall of the processing container 1.
  • the microwave transmission unit 40 transmits the microwave output from the microwave output unit 30.
  • the microwave transmission unit 40 includes one central microwave introduction unit 43b and six peripheral microwave introduction units 43a.
  • the central microwave introduction part 43b is arranged at the center of the main body part 10, and the six peripheral microwave introduction parts 43a (only two are shown in FIG. 1) are arranged at equal intervals in the circumferential direction around the main body part 10. Is done.
  • the peripheral microwave introduction part 43a and the central microwave introduction part 43b are also collectively referred to as a microwave introduction part 43.
  • the microwave introduction unit 43 has a function of introducing the microwave output from the amplifier unit 42 into the microwave radiation mechanism 50 and a function of matching impedance.
  • the number of the microwave introduction parts 43 is not limited to six, and may be one or three or more.
  • the number of the peripheral microwave introduction portions 43a and the dielectric windows 123 is not limited to six and may be two or more.
  • the number of peripheral microwave introducing portions 43a and dielectric windows 123 is preferably three or more, and may be, for example, three to six.
  • the number of the central microwave introduction part 43b and the dielectric window 133 is preferably one, but may not be provided.
  • the microwave radiation mechanism 50 includes dielectric top plates 121 and 131, slots 122 and 132, and dielectric windows 123 and 133.
  • the dielectric top plates 121 and 131 are formed of a disk-shaped dielectric material that transmits microwaves, and are disposed on the upper surface of the main body 10.
  • the dielectric top plates 121 and 131 are made of, for example, quartz, alumina (Al 2 O 3 ) or the like having a relative dielectric constant larger than that of vacuum.
  • dielectric windows 123 and 133 are in contact with the back surface of the opening of the main body 10 through slots 122 and 132 formed in the main body 10.
  • the dielectric windows 123 and 133 are made of, for example, quartz, alumina (Al 2 O 3 ), or the like.
  • the dielectric windows 123 and 133 are provided at positions recessed from the ceiling surface by the thickness of the opening formed in the main body 10 and function as dielectric windows for supplying microwaves to the plasma generation space U.
  • the peripheral microwave introducing portion 43a and the central microwave introducing portion 43b are arranged by coaxially arranging a cylindrical outer conductor 52 and a rod-shaped inner conductor 53 provided at the center thereof. A microwave power is fed between the outer conductor 52 and the inner conductor 53 to form a microwave transmission path 44 through which the microwave propagates toward the microwave radiation mechanism 50.
  • the peripheral microwave introducing portion 43a and the central microwave introducing portion 43b are provided with a slag 54 and an impedance adjusting member 140 located at the tip thereof.
  • the slag 54 is formed of a dielectric and has a function of matching the load impedance in the processing container 1 with the characteristic impedance of the microwave power source in the microwave output unit 30 by moving the slag 54.
  • the impedance adjusting member 140 is formed of a dielectric, and adjusts the impedance of the microwave transmission path 44 by its relative dielectric constant.
  • the microwave output unit 30, the microwave transmission unit 40, and the microwave radiation mechanism 50 are an example of a microwave power application unit that applies microwave power to the processing container 1.
  • the gas supplied from the gas supply source 22 is supplied from the gas diffusion chamber 62 through the gas supply hole 60 through the gas supply pipe 111 into the processing container 1 in a shower shape.
  • the gas include plasma generating gas such as Ar gas, gas that is desired to be decomposed with high energy such as N 2 gas, and processing gas such as silane gas.
  • the gas supply source 22, the gas supply pipe 111, and the gas supply hole 60 are an example of a gas supply unit that supplies gas.
  • the control device 3 includes a microprocessor 4, a ROM (Read Only Memory) 5, and a RAM (Random Access Memory) 6.
  • the ROM 5 and the RAM 6 store a process recipe that is a process sequence and control parameters of the microwave plasma processing apparatus 100.
  • the microprocessor 4 is an example of a control unit that controls each unit of the microwave plasma processing apparatus 100 based on a process sequence and a process recipe.
  • the control device 3 includes a touch panel 7 and a display 8 and is capable of displaying inputs and results when performing predetermined control according to a process sequence and a process recipe. Further, the control device 3 controls the filling process of the SiN film.
  • the wafer W is held on the transfer arm and is transferred into the processing container 1 from the opened gate valve 18 through the loading / unloading port 17. .
  • the gate valve 18 is closed after the wafer W is loaded.
  • the wafer W is transferred above the mounting table 11, the wafer W is transferred from the transfer arm to the pusher pin, and is placed on the mounting table 11 by the pusher pin being lowered.
  • the pressure inside the processing container 1 is maintained at a predetermined degree of vacuum by the exhaust device 16.
  • the processing gas is introduced into the processing container 1 from the gas supply hole 60 in the form of a shower.
  • FIG. 2 is a flowchart illustrating an example of an embedding method according to an embodiment. This flowchart is executed in the control device 3 of the microwave plasma processing apparatus 100, for example.
  • the control device 3 controls the execution of the film forming process based on the predetermined film forming conditions (step S10).
  • a gas containing Si, H, and N is supplied, high frequency power is applied to the mounting table 11, and microwave power is applied to the processing container 1 to perform a film forming process using microwave plasma.
  • microwave power is applied to the processing container 1 to perform a film forming process using microwave plasma.
  • control device 3 controls the execution of the etching process based on a predetermined etching condition (step S12).
  • a gas containing H or a gas containing H and Ar is supplied, high-frequency power is applied to the mounting table 11, and microwave power is applied to the processing chamber 1 to perform an etching process using microwave plasma. . Specific experiments for optimizing the etching conditions will be described later.
  • control device 3 determines whether the film forming process and the etching process have been repeated a predetermined number of times (step S14).
  • the control device 3 repeats steps S10 to S14 until the film forming process and the etching process are executed a predetermined number of times, and after executing the predetermined number of times, the present process is terminated.
  • the SiN film 20 is formed in the film forming process on the structure 21 in which the recesses are formed on the wafer W, and the SiN film 20 is etched in the etching process to open the recesses. To spread. In the etching step, it is preferable to cut the side portion and the opening without cutting the bottom portion of the SiN film 20.
  • the SiN film 20 can be embedded in the recess formed in the wafer W.
  • the electron temperature of plasma is higher than that of the microwave plasma processing apparatus 100, and ion energy is higher.
  • microwave plasma processing apparatus 100 a microwave surface wave propagates on the ceiling surface of the processing container 1, and the plasma is diffused into the processing container 1 by the microwave surface wave, and the diffusion plasma (hereinafter referred to as “microwave plasma”). Is also used for film formation and etching on the wafer W.
  • the characteristics of such microwave plasma include that the electron density of the generated plasma is high and the electron temperature of the plasma is low, that is, the ion energy is low, so that damage to the wafer W is small.
  • the microwave plasma having such characteristics is used to repeat the film formation process ⁇ the etching process, and the recesses are embedded in the recesses so as not to block the openings of the recesses formed in the structure 21.
  • the behavior of ions is controlled by applying high-frequency power to the mounting table 11.
  • the SiN film can be completely embedded even in the high aspect ratio recess having an aspect ratio of 7.5 or more.
  • the film forming conditions are optimized in order to embed the SiN film from the bottom of the recess.
  • the opening of the recess is formed while avoiding etching the bottom of the recess, damaging the bottom and the mask, and accumulating by-products generated during etching.
  • the etching conditions are optimized.
  • an example of an experimental result for optimizing the film formation condition will be described, and then an example of the experimental result for optimizing the etching condition will be described.
  • FIG. 4 is a diagram illustrating an example of a pressure-dependent experiment result in the film forming process according to the embodiment.
  • the pressure in the processing container 1 is controlled to 10 Pa, 20 Pa, 40 Pa, and 80 Pa.
  • Other film forming conditions in this experiment are shown below.
  • the microwave power under the film forming conditions is not limited to 3 kW, and may be in the range of 3 kW to 5 kW.
  • the diameter ⁇ of the disk-shaped top plate of the main body 10 is 458 mm. Therefore, if the microwave power is in the range of 3 kW to 5 kW, the microwave power per unit area may be in the range of about 1.821 (W / cm 2 ) to about 3.035 (W / cm 2 ). .
  • the high frequency power under the film forming conditions is not limited to 5 W, and may be in the range of 5 W to 100 W.
  • the mounting table 11 functioning as an electrode has a diameter ⁇ of 300 mm. Therefore, if the high frequency power is in the range of 5 W to 100 W, the high frequency power per unit area may be in the range of about 0.007074 (W / cm 2 ) to about 0.1415 (W / cm 2 ).
  • the SiN film 20 formed on the upper surface of the structure 21 is indicated by Top, and the SiN film formed on the sidewall of the recess of the structure 21.
  • the film 20 is denoted by Side, and the SiN film 20 formed on the bottom of the recess is denoted by Bottom.
  • the cross section of the film formation pattern of the experimental results is shown in the second stage for each pressure in the first stage.
  • the pressure in the processing container 1 is 20 Pa, 40 Pa, and 80 Pa
  • the pressure in the processing container 1 may be controlled to 10 Pa or less.
  • FIG. 5 is a diagram illustrating an example of the relationship between the RI and the film formation result according to the embodiment.
  • the RI value indicates the refractive index of light when the film is irradiated with light, and is used as one of means for evaluating the film quality.
  • the low RI in FIG. 5 indicates a value with an RI value of 2.5 or less
  • the high RI indicates a value with an RI value of 2.7 or more.
  • the higher the RI film the harder it is to form a film on the side of the concave portion of the structure 21 in the formation of the film (A and the bottom stage). It can be seen that the film can be deposited from the bottom of the recess.
  • the lower the RI film the more uniformly the film is formed on the side and bottom of the concave portion of the structure 21 (see B and the bottom row), and the opening of the concave portion becomes narrower.
  • FIG. 6 is a diagram illustrating an example of a result depending on the high frequency power in the film forming process according to the embodiment.
  • the high frequency power is controlled to 0 W, 5 W, 10 W, and 25 W.
  • Other film forming conditions in this experiment are shown below.
  • the ion pulling force becomes stronger, and the film thickness at the bottom of the recess can be increased without narrowing the opening of the recess (see D and the bottom row).
  • the high frequency power is increased, ions are vertically incident on the recess when the high frequency power is applied to the mounting table 11. This makes it difficult for the film to adhere to the side wall, and the film at the bottom of the recess can be thickened.
  • the high-frequency power is too high, the structure pattern tends to be damaged.
  • the by-product is reattached to the opening of the recess, an overhang (pinching) occurs in the opening of the recess, and the opening becomes narrower (see E).
  • high-frequency power is not applied, a film is formed on the side of the recess, making it difficult to increase the thickness of the bottom of the recess. Therefore, it is preferable to control the high frequency power to 5 W or more from this experiment.
  • FIG. 7 is a diagram illustrating an example of a film formation result when the gas flow rate ratio and the high frequency power (RF) are variably controlled according to an embodiment.
  • RF high frequency power
  • the column of FIG. 7 shows radio frequency power (RF). Film formation patterns when the gas flow rate ratio and the high-frequency power are changed are shown by pattern cross sections (a) to (n).
  • the RI value changes according to the change in the gas flow rate ratio between SiH 4 and N 2 when the film forming conditions other than the gas flow rate ratio including, for example, high frequency power do not change.
  • the RI value changes in the range of 2.0 to 3.0, and the higher the flow rate ratio of SiH 4 to N 2 , the higher the RI value and the wider the opening of the recess (see F). .
  • the lower the flow ratio of SiH 4 to N 2 the lower the RI value, and the opening of the recess becomes narrower or closes (see G).
  • the opening of the recess becomes wider as the high-frequency power is lower (see F), and the opening of the recess becomes narrower as the high-frequency power becomes higher (see H).
  • the opening of the recess is closed (see the film formation pattern (b)). Further, when the high frequency power is 200 W, the film formation pattern is broken and the opening of the recess is closed (see I).
  • the high frequency power in order to execute the film forming process without narrowing the opening of the recess in the film forming process, it is preferable to control the high frequency power to 5 W to 100 W. Thereby, adhesion of the film to the side wall of the recess is reduced, and the SiN film 20 can be embedded from the bottom of the recess.
  • the film forming process by controlling the film forming conditions so that the RI value of the SiN film is in the range of about 2.5 to about 2.7. It can be seen that a film containing a large amount of Si component is formed in the SiN film 20 when the film is formed so that the RI value is as high as about 2.5 to about 2.7.
  • the microwave power is controlled in the range of 3 kW to 5 kW, and the high frequency power is controlled to 5 W to 100 W.
  • the degree of dissociation of the SiH 4 gas is controlled by controlling the high-frequency power to be high or low in the range of 5 W to 100 W, and thereby SiH 3 * and SiH 2 * generated from SiH 4 .
  • the ratio of radicals and ions of SiH * can be adjusted.
  • higher-order SiH 3 * has a high adhesion coefficient
  • low-order SiH * has a low adhesion coefficient. Therefore, by controlling the high frequency power in the range of 5 W to 100 W to control the degree of gas dissociation of SiH 4 , the probability of film adhesion to the sidewalls of the recesses is controlled. The adhesion can be suppressed and the SiN film 20 can be embedded from the bottom of the recess.
  • FIG. 8 is a diagram illustrating an example of a result of etching when the pressure according to an embodiment is variably controlled.
  • the etching process is performed on the wafer W on which the SiN film is formed in the film forming process.
  • the pressure in the processing container 1 is controlled to 2 Pa, 4 Pa, 10 Pa, 20 Pa, and 30 Pa.
  • Other etching conditions in this experiment are shown below.
  • H 2 gas shown as the gas type in the etching conditions is an example of a gas containing H.
  • a mixed gas of Ar and H 2 shown as a gas type is an example of a gas containing H and Ar.
  • the microwave power in the etching process is not limited to 2 W, and may be controlled to be lower than the microwave power controlled in the film formation process.
  • the high frequency power under the etching conditions is not limited to 200 W, and may be in the range of 200 W to 500 W. That is, the high frequency power per unit area may be in the range of about 02829 (W / cm 2 ) to about 0.7074 (W / cm 2 ).
  • the upper film formation pattern in FIG. 8 indicates that when the film formation time is increased without performing the etching process after the film formation process, the opening of the recess is closed as the film formation time increases (see J). .
  • the lower part of FIG. 8 shows an example of the result of this experiment. According to this result, it turns out that the opening of the recessed part of the structure 21 spreads by making the pressure in the processing container 1 into 10 Pa or less (refer K).
  • the pressure in the processing container 1 is set to a pressure higher than 20 Pa, it can be seen that the by-product generated in the etching process or the like reattaches to the side wall or opening of the recess and the opening is narrowed or closed.
  • ions can be vertically incident on the recess and etching in the recess can be performed vertically. Conceivable.
  • the pressure in the processing vessel 1 is preferably controlled to 10 Pa or less, more preferably 4 Pa to 10 Pa. Thereby, the reattachment of the film to the side wall and opening of the recess is suppressed, the opening of the recess is widened, and the SiN film 20 can be embedded from the bottom of the recess in the next film formation step.
  • FIG. 9 is a diagram illustrating an example of a gas flow rate ratio and an etching result in etching according to an embodiment. Other etching conditions in this experiment are shown below.
  • the film formation pattern on the left in FIG. 9 is Initial (recessed portion in the initial state), that is, a state where a SiN film is formed.
  • Initial recessed portion in the initial state
  • the relationship between the gas flow rate ratio and the film formation pattern when the etching process is executed with respect to Initial will be described.
  • the film formation pattern in the center shows the state of the etched recess when the gas flow ratio of Ar to H 2 is 10/1 in the etching process.
  • the film formation pattern on the right shows the state of the recess etched by the etching process when the gas flow ratio of Ar and H 2 is 10/12. According to this, in the film formation pattern at the center, the etching shape of the recesses is not vertical, and an overhang that narrows the opening occurs.
  • a mixed gas of Ar and H 2 or a single gas of H 2 gas can be used as the gas species.
  • a mixed gas of Ar and H 2 is preferable to a single gas of H 2 gas.
  • FIG. 10 is a diagram illustrating an example of etching results when the high-frequency power according to the embodiment is variably controlled.
  • the high frequency power is controlled to 50 W, 100 W, 200 W, and 300 W.
  • Other etching conditions in this experiment are shown below.
  • FIG. 10 shows an indication of the magnitude of the microwave power.
  • the microwave power of the etching process is the film formation process. It is lower than the microwave power.
  • the middle film formation pattern indicates that the microwave power in the etching process is comparable to the microwave power in the film formation process.
  • the lower deposition pattern indicates that the microwave power in the etching process is higher than the microwave power in the deposition process.
  • the opening of the recess is closed.
  • etching is performed while controlling the high frequency power to 200 W or 300 W in the etching process and controlling the microwave power in the etching process to be lower than the microwave power in the film forming process, the opening of the recess is not narrowed.
  • the film 20 is embedded in the recess. Therefore, by controlling the high frequency power to 200 W to 300 W and making the microwave power in the etching process lower than the microwave power in the film forming process, the SiN film is formed in the recesses by repeating the film forming process and the etching process. 20 can be embedded.
  • the mask selection ratio is low, and in the lower part, by-products generated by etching are reattached to the opening of the recessed part, and the opening of the recessed part is narrowed or closed.
  • the magnitude of the high-frequency power varies depending on the shape of the pattern of the structure 21, the gap between the top surface of the mounting table 11 of the microwave plasma processing apparatus 100 and the ceiling surface of the processing container 1, and the like. Therefore, the high frequency power may be controlled to 200 W to 500 W in the etching process. In particular, when etching a high aspect hole having an aspect ratio of 7.5 or more, it is preferable to apply a high frequency power of about 500 W.
  • the film forming process and the etching process described above are performed in the processing container 1 of the microwave plasma processing apparatus 100.
  • the film forming process and the etching process are executed by different apparatuses, the number of man-hours increases.
  • the film forming process and the etching process can be continuously performed by the same microwave plasma processing apparatus 100. Thereby, throughput can be improved.
  • the RI value is related to the insulating property of the SiN film 20 and is preferably in the range of 2.0 to 3.0. However, there are cases where high insulation is required for the embedded SiN film 20 and where high insulation is not required.
  • the SiN film 20 when the SiN film 20 is embedded in a space between wirings in order to perform interlayer insulation, high insulation is required. On the other hand, the insulating properties of a film containing a large amount of Si component in the SiN film 20 are low.
  • the insulating property of the SiN film 20 is enhanced by nitriding a film containing a large amount of Si component in the SiN film 20. Thereby, embedding of the highly insulating SiN film 20 is realized, and interlayer insulation can be reliably performed by the embedded SiN film.
  • FIG. 11 is a flowchart illustrating an example of an embedding method according to a modification of the embodiment. This flowchart is executed in the control device 3 of the microwave plasma processing apparatus 100, for example.
  • the control device 3 controls the execution of the film formation process based on the predetermined film formation conditions (step S20).
  • a gas containing Si, H, and N is supplied based on the optimized film forming conditions, high frequency power is applied to the mounting table 11, and microwave power is applied to the inside of the processing container 1 to form a micro wave.
  • a film forming process using wave plasma is performed.
  • control device 3 executes a nitriding step of nitriding the formed SiN film based on predetermined nitriding conditions (step S22).
  • N 2 gas is supplied.
  • N 2 gas is an example of a gas containing N.
  • control device 3 controls the execution of the etching process based on a predetermined etching condition (step S24).
  • a gas containing H or a gas containing H and Ar is supplied, high-frequency power is applied to the mounting table 11, and microwave power is applied to the processing chamber 1 to perform an etching process using microwave plasma. .
  • control device 3 determines whether the film forming process, the nitriding process, and the etching process have been repeated a predetermined number of times (step S26).
  • the control device 3 repeatedly executes steps S20 to S26 until the film forming process and the etching process are executed a predetermined number of times, and after executing the predetermined number of times, the present process is terminated.
  • the SiN film 20 is formed in the film forming process on the structure 21 having the recesses.
  • the SiN film 20 is nitrided by a nitriding process.
  • the etching process the side portion of the SiN film 20 is etched to widen the opening of the recess, and the etching shape is made vertical.
  • the SiN film 20 having a high insulating property can be embedded by repeating the film forming process, the nitriding process, and the etching process.
  • the etching process is completed, if there is surface roughness or the like on the surface after the SiN film 20 is buried, it is preferable to perform the film forming process last.
  • FIG. 13 is a diagram illustrating an example of the relationship between nitridation of the SiN film and leakage resistance according to a modification of the embodiment.
  • the horizontal axis of FIG. 13 shows the breakdown voltage E (MV / cm), and the vertical axis shows the leakage resistance J (A / cm 2 ) of the film.
  • A indicates the leakage resistance J when the dielectric breakdown voltage E is applied to the SiN film of RI 2.80, which is formed by repeating the film forming step (C) and the etching step (E).
  • b shows the leakage resistance J when the dielectric breakdown voltage E is applied to the SiN film of RI 2.06, which is formed by repeating the film forming step (C) and the etching step (E).
  • c shows the leakage when the breakdown voltage E is applied to the SiN film of RI 2.80 formed by repeating the film forming step (C), the etching step (E) and the nitriding step (N) for 5 seconds.
  • Resistance J is shown.
  • d shows the leakage when the dielectric breakdown voltage E is applied to the SiN film of RI 2.80 formed by repeating the film forming step (C), the etching step (E) and the nitriding step (N) for 15 seconds.
  • Resistance J is shown.
  • e is a leakage when the dielectric breakdown voltage E is applied to the SiN film of RI 2.80 formed by repeating the film forming step (C), the etching step (E) and the nitriding step (N) for 30 seconds. Resistance J is shown.
  • the leakage resistance J is lowered, and the insulating property of the SiN film is increased as the number of repetitions is increased.
  • Treatment treatment You may have the treatment process which treats with respect to the SiN film
  • the treatment process is performed in the same apparatus as the microwave plasma processing apparatus 100 that performs the film forming process, the nitriding process, and the etching process.
  • control device 3 supplies a gas containing H into the processing container 1 and performs a treatment process of the SiN film by microwave plasma.
  • the control device 3 supplies a mixed gas of H 2 and Ar as a gas containing H, and performs the treatment process by controlling the flow rate of Ar to be higher than the flow rate of H 2 .
  • the treatment conditions are shown below.
  • FIG. 14 shows the result of executing the treatment process on the polysilicon film based on the treatment conditions. According to this, by performing the above plasma treatment from the state where the surface roughness Ra shown in the leftmost part of FIG. 14A is 2.63 nm, 0.21 nm of the surface roughness Ra shown in FIG. The surface of the Si film could be smoothed to the state.
  • the 14A shows the surface state of the Si film when the crystallinity is lowered from the leftmost to the rightmost.
  • the rightmost graph shows 0% crystallinity, that is, the surface state of an amorphous silicon (aSi) film.
  • the roughness of the surface of the Si film can be reduced by executing the treatment process according to the present embodiment, and Si can be reduced in the same manner as when the crystallinity of the film is lowered.
  • the film surface could be smoothed.
  • the surface of the SiN film can also be made smooth so that the film can be satisfactorily formed on the SiN film in the next step.
  • the treatment process can be performed in the processing container 1 of the microwave plasma processing apparatus 100 that is the same as the film forming process and the etching process. Thereby, throughput can be improved.
  • the treatment process it is preferable to control the flow rate of Ar to be higher than the flow rate of H 2 . Further, the treatment process can be executed not only as a treatment for the SiN film but also as a treatment for other films.
  • SiN film embedding process according to the embodiment, the embedding process according to the modification, and the treatment process after the embedding process have been described above.
  • Ar, SiH 4 , and N 2 gases were supplied as an example of a gas containing Si, H, and N.
  • gas species of Si 2 H 6 and Si 2 H 2 CF 2 can be used instead of SiH 4 .
  • N 2 gas is used as an example of N-containing gas.
  • NH 3 gas species can be used instead of N 2 .
  • H 2 gas or a mixed gas of Ar and H 2 is given as an example of a gas containing H or a gas containing H and Ar.
  • a gas containing H is not limited to a single gas H 2, can be used a mixed gas of H 2 and He.
  • the film forming conditions and the etching conditions are optimized, and the film forming process and the etching process are performed based on the optimized film forming conditions and the etching conditions.
  • the SiN film can be embedded in the recess formed on the wafer W.
  • the insulating properties of the SiN film can be improved. Furthermore, after performing the film forming process and the etching process or after repeatedly performing these processes, the surface of the SiN film can be made smooth by performing the treatment process, and the film can be satisfactorily formed in the next process. .
  • the processing device can be applied to any type of device of Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna, Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma (HWP). Is possible.
  • CCP Capacitively Coupled Plasma
  • ICP Inductively Coupled Plasma
  • ECR Electron Cyclotron Resonance Plasma
  • HWP Helicon Wave Plasma
  • the wafer W is described as an example of the substrate.
  • the substrate is not limited to this, and may be various substrates used in LCD (Liquid Crystal Display), FPD (Flat Panel Display), CD substrate, printed circuit board, and the like.

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