WO2019205265A1 - 柔性显示面板及其制作方法 - Google Patents

柔性显示面板及其制作方法 Download PDF

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Publication number
WO2019205265A1
WO2019205265A1 PCT/CN2018/092203 CN2018092203W WO2019205265A1 WO 2019205265 A1 WO2019205265 A1 WO 2019205265A1 CN 2018092203 W CN2018092203 W CN 2018092203W WO 2019205265 A1 WO2019205265 A1 WO 2019205265A1
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Prior art keywords
layer
insulating layer
forming
organic light
disposed
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PCT/CN2018/092203
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English (en)
French (fr)
Inventor
李顺英
许杰
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/303,973 priority Critical patent/US11005056B2/en
Publication of WO2019205265A1 publication Critical patent/WO2019205265A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the field of flexible display technologies, and in particular to a flexible display panel and a manufacturing method thereof.
  • OLED display panels have become very popular emerging flat display devices at home and abroad, because OLED display panels have self-luminous, wide viewing angle, short reaction time, high luminous efficiency, Wide color gamut, low operating voltage, thin thickness, large size and flexible display panel, and simple process, it also has the potential for low cost.
  • the flexible panel Compared with the traditional rigid panel, the flexible panel has obvious advantages. It is not only thinner in volume, but also lower in power consumption than the original device, which helps to improve the endurance of the electronic device, and is based on its flexibility and flexibility. The good features are also much more durable than hard panels, reducing the probability of accidental damage to electronic equipment.
  • the stress inside the device easily changes the performance of the thin film transistor in the device (such as the threshold voltage Vth, the subthreshold swing SS, etc.), and may also Layering occurs between layers in the device, resulting in reduced device performance and reduced lifetime.
  • a flexible display panel includes: a flexible substrate; an organic material layer disposed on the flexible substrate, the organic material layer including a plurality of grooves; and a plurality of thin film transistors, And disposed in the plurality of grooves; a flat layer disposed on the organic material layer and the plurality of thin film transistors; a pixel defining layer disposed on the flat layer, the pixel defining layer including a plurality of openings a plurality of organic light emitting diode devices housed in the plurality of openings; an encapsulation layer disposed on the plurality of organic light emitting diode devices and the pixel defining layer.
  • each groove is in one-to-one correspondence with the openings, and each groove is opposite to a corresponding one of the openings.
  • each recess accommodates at least one thin film transistor
  • the thin film transistor includes: an active layer; a first insulating layer disposed on the active layer; and a gate disposed on the first insulating layer a second insulating layer disposed on the gate electrode and the first insulating layer; a second metal layer disposed on the second insulating layer; an interlayer insulating layer disposed on the second insulating layer and On the second metal layer; a source and a drain are disposed on the interlayer insulating layer, the source and the drain penetrating through the interlayer insulating layer, the second insulating layer, and the The first insulating layer is in contact with the active layer, respectively.
  • each of the openings houses an organic light emitting diode device, the organic light emitting diode device including: an anode penetrating the flat layer to be in contact with a drain of the thin film transistor; and an organic light emitting function layer disposed on the anode And a cathode disposed on the organic light-emitting functional layer.
  • the flexible display panel further includes: a plurality of supports disposed between the pixel defining layer and the encapsulation layer.
  • a method of fabricating a flexible display panel includes: forming an organic material layer including a plurality of grooves on a flexible substrate; forming a thin film transistor in the recess; Forming a flat layer on the organic material layer and the plurality of thin film transistors; forming a pixel defining layer including a plurality of openings on the flat layer; forming an organic light emitting diode device in the opening; and the plurality of organic light emitting An encapsulation layer is formed on the diode device and the pixel defining layer.
  • the method of forming a thin film transistor in each of the grooves includes: forming an active layer in the recess; forming a first insulating layer on the active layer; and on the first insulating layer Forming a gate; forming a second insulating layer on the gate and the first insulating layer; forming a second metal layer on the second insulating layer; and the second insulating layer and the second metal Forming an interlayer insulating layer on the layer; forming a source penetrating the interlayer insulating layer, the second insulating layer and the first insulating layer to be in contact with the active layer, respectively, on the interlayer insulating layer And the drain.
  • the method of forming an organic light emitting diode device in the opening includes: forming an anode penetrating the flat layer to contact the thin film transistor in the opening; forming an organic light emitting functional layer on the anode Forming a cathode on the organic light-emitting functional layer.
  • the flexible display panel before forming the encapsulation layer on the plurality of organic light emitting diode devices and the pixel defining layer, the flexible display panel further includes: forming a plurality of supports on the pixel defining layer.
  • the formed organic material layer with grooves of the invention has good bending performance, can improve the stress absorption and release ability of the device, and can avoid the performance of the thin film transistor which occurs in the continuous bending (eg Changes in threshold voltage Vth, subthreshold swing SS, etc., are also less prone to device rupture and film delamination, thereby increasing the lifetime of the device.
  • the organic material layer with grooves can not only protect the water vapor and oxygen, but also avoid the electrical signal interference between adjacent thin film transistors.
  • FIG. 1 is a schematic structural view of a flexible display panel according to an embodiment of the present invention.
  • FIGS. 2A through 2G are process diagrams of a flexible display panel in accordance with an embodiment of the present invention.
  • FIG. 1 is a schematic structural view of a flexible display panel in accordance with an embodiment of the present invention.
  • a flexible display panel includes a flexible substrate 100, an organic material layer 200, a plurality of thin film transistors 300, a flat layer 400, a pixel defining layer 500, a plurality of organic light emitting diode devices 600, and a plurality of supports. Body 700 and encapsulation layer 800.
  • the flexible substrate 100 may be made of, for example, polyimide, but the invention is not limited thereto.
  • the organic material layer 200 is disposed on the flexible substrate 100.
  • the organic material layer 200 is electrically insulating and has a good ability to block moisture and oxygen.
  • the organic material layer 200 includes a plurality of grooves 210 with openings that face away from the flexible substrate 100.
  • the plurality of grooves 210 may be arranged in an array, but the present invention is not limited thereto.
  • At least one thin film transistor 300 is housed in each of the grooves 210.
  • the thin film transistor 300 includes an active layer 310, a first insulating layer 320 disposed on the active layer 310, a gate 330 disposed on the first insulating layer 320, and a second insulating layer 340.
  • the second metal layer 350 is disposed on the second insulating layer 340; the interlayer insulating layer 360 is disposed on the second insulating layer 340 and the second metal layer 350;
  • the source 370 and the drain 380 are disposed on the interlayer insulating layer 360, and the source 370 and the drain 380 penetrate the interlayer insulating layer 360, the second insulating layer 340, and the first insulating layer 320 to respectively contact the active layer 310.
  • the structure of the thin film transistor 300 is merely an example, and the structure of the thin film transistor of the present invention is not limited thereto, and it may be any conventional thin film transistor used in a display panel.
  • the active layer 310 may be made of, for example, polysilicon, but the invention is not limited thereto.
  • the gate 330 and the second metal layer 350 form a capacitor, wherein the gate 330 is used as the gate of the transistor, and can be used as one electrode of the capacitor, and the second metal layer 350 is used as the other electrode of the capacitor.
  • the corresponding second metal layer 350 may be omitted, and the corresponding interlayer insulating layer 360 or the second insulating layer 340 may also be omitted.
  • the flat layer 400 is disposed on the organic material layer 200 and the plurality of transistors 300 to function as a flattening.
  • the pixel defining layer 500 is disposed on the flat layer 400.
  • the pixel defining layer 500 includes a plurality of openings 510. Further, the openings 510 are in one-to-one correspondence with the grooves 210, and each of the openings 510 and the corresponding one of the grooves 210 are opposed to each other or face each other. That is, the projection of the opening 510 in the groove 210 is located within the groove 210, that is, the groove wall of the groove 210 is located between the adjacent two openings 510, thereby preventing the groove wall from affecting the light transmission effect of the opening 510.
  • An organic light emitting diode device 600 is housed in each of the openings 510.
  • the organic light emitting diode device 600 includes an anode 610 that penetrates the flat layer 400 to be in contact with the drain 380, an organic light emitting function layer 620 disposed on the anode 610, and a cathode 630 disposed on the organic light emitting function layer 620.
  • One of the anode 610 and the cathode 630 is reflective and the other is light transmissive.
  • the organic light-emitting functional layer 620 includes, in order from the anode 610 to the cathode 630, a hole generating layer, a hole transporting layer, an organic light-emitting layer, an electron transporting layer, and an electron injecting layer, but the structure of the organic light-emitting functional layer 620 of the present invention is not limited. herein.
  • the organic light emitting diode device 600 may be a red organic light emitting diode device, a green organic light emitting diode device, or a blue organic light emitting diode device, and the plurality of organic light emitting diode devices 600 include at least one red light emitting organic light emitting diode device, at least one A green organic light emitting diode device and at least one blue organic light emitting diode device.
  • a plurality of supports 700 are disposed on the pixel defining layer 500.
  • the support body 700 may be made of, for example, a polystyrene material, but the invention is not limited thereto.
  • the role of the support body 700 is to prevent the reticle from coming into contact with the substrate when the film layer is vapor-deposited, thereby preventing the substrate from being scratched. Therefore, as another embodiment of the present invention, the support body 700 may not be included.
  • the encapsulation layer 800 is disposed on the pixel defining layer 500, the plurality of organic light emitting diode devices 600, and the plurality of supports 700.
  • the encapsulation layer 800 has a better ability to block moisture and oxygen, and etches the organic light emitting diode device 600 with surface moisture and oxygen.
  • the formed organic material layer having the groove has good bending performance, can improve the stress absorption and release capability of the device, and can avoid the film which occurs in the continuous bending. Changes in transistor performance (such as threshold voltage Vth, subthreshold swing SS, etc.) are also less likely to cause device rupture and film delamination, thereby increasing device lifetime.
  • the organic material layer with grooves can not only protect the water vapor and oxygen, but also avoid the electrical signal interference between adjacent thin film transistors.
  • FIGS. 2A through 2G are process diagrams of a flexible display panel in accordance with an embodiment of the present invention.
  • Step 1 Referring to FIG. 2A, an organic material layer 200 including a plurality of grooves 210 is formed on the flexible substrate 100. Specifically, an organic layer is first coated on the flexible substrate 100; then, a plurality of grooves 210 are formed in the organic layer by exposure, development, etching, or the like, thereby forming the organic material layer 200.
  • Step 2 Referring to FIG. 2B, a thin film transistor 300 is formed in the recess 210.
  • a specific method of forming the thin film transistor 300 includes: first, forming the active layer 310 in the recess 210; secondly, forming the first insulating layer 320 on the active layer 310; then, forming on the first insulating layer 320 a gate electrode 330; then, a second insulating layer 340 is formed on the gate electrode 330 and the first insulating layer 320; then, a second metal layer 350 is formed on the second insulating layer 340; then, in the second insulating layer 340 and An interlayer insulating layer 360 is formed on the second metal layer 350; then, a source penetrating the interlayer insulating layer 360, the second insulating layer 340, and the first insulating layer 320 to be in contact with the active layer 310, respectively, is formed on the interlayer insulating layer 360. Pole 370 and drain 380.
  • the corresponding steps may be omitted.
  • the corresponding steps may be omitted.
  • Step 3 Referring to FIG. 2C, a flat layer 400 is formed on the organic material layer 200 and the plurality of thin film transistors 300.
  • the flat layer 400 has an effect of flattening.
  • Step 4 Referring to FIG. 2D, a pixel defining layer 500 including a plurality of openings 510 is formed on the flat layer 400.
  • the openings 510 are in one-to-one correspondence with the grooves 210, and each of the openings 510 and the corresponding one of the grooves 210 are opposed to each other or face each other. That is, the projection of the opening 510 in the groove 210 is located within the groove 210, that is, the groove wall of the groove 210 is located between the adjacent two openings 510, thereby preventing the groove wall from affecting the light transmission effect of the opening 510.
  • Step 5 Referring to FIG. 2E, an organic light emitting diode device 600 is formed in the opening 510.
  • a specific method of fabricating the organic light emitting diode device 600 includes first forming an anode 610 penetrating the flat layer 400 to contact the drain 380 of the thin film transistor 300 in the opening 510; secondly, forming an organic light emitting functional layer on the anode 610 620; Finally, a cathode 630 is formed on the organic light-emitting function layer 620.
  • the step of forming the anode 610 can be performed between step three and step four.
  • Step 6 Referring to FIG. 2F, a plurality of supports 700 are formed on the pixel defining layer 500. As another embodiment of the present invention, when the support 700 is not present, the step 6 may be omitted.
  • Step 7 Referring to FIG. 2G, an encapsulation layer 800 is formed on the pixel defining layer 500, the plurality of organic light emitting diode devices 600, and the plurality of supports 700.
  • the formed organic material layer having the groove has good bending performance, can improve the stress absorption and release capability of the device, and can be avoided continuously.
  • the variation of the performance of the thin film transistor (such as the threshold voltage Vth, the subthreshold swing SS, etc.) occurring in the bend is also less likely to cause device breakage and film delamination, thereby increasing the service life of the device.
  • the organic material layer with grooves can not only protect the water vapor and oxygen, but also avoid the electrical signal interference between adjacent thin film transistors.

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Abstract

本发明提供了一种柔性显示面板，其包括：柔性基板；有机材料层，设置于所述柔性基板上，所述有机材料层包括多个凹槽；多个薄膜晶体管，容置于所述多个凹槽中；平坦层，设置于所述有机材料层和所述多个薄膜晶体管上；像素限定层，设置于所述平坦层上，所述像素限定层包括多个开口；多个有机发光二极管器件，容置于所述多个开口中；封装层，设置于所述多个有机发光二极管器件和所述像素限定层上。本发明的形成的具有凹槽的有机材料层具有良好的弯折性能，可提高器件的应力吸收释放能力，可以避免在不断地弯折中发生的薄膜晶体管的性能(如阈值电压Vth、亚阈值摆幅S.S等)的变化，也不易出现器件断裂和膜层分层的情况，从而增加器件的使用寿命。

Description

柔性显示面板及其制作方法 技术领域
本发明属于柔性显示技术领域，具体地讲，涉及一种柔性显示面板及其制作方法。
背景技术
近年来，有机发光二极管(Organic Light-Emitting Diode，OLED)显示面板成为国内外非常热门的新兴平面显示设备产品，这是因为OLED显示面板具有自发光、广视角、短反应时间、高发光效率、广色域、低工作电压、薄厚度、可制作大尺寸与可挠曲的显示面板及制程简单等特性，而且它还具有低成本的潜力。
相较于传统的硬质面板，柔性面板优势明显，其不仅在体积上更加轻薄，功耗上也低于原有器件，有助于提升电子设备的续航能力，同时基于其可弯曲、柔韧性佳的特性，其耐用程度也大大高于硬质面板，降低电子设备意外损伤的概率。然而，现有的柔性显示面板在不断地进行弯折的过程中，器件内部所受到的应力容易使得器件内薄膜晶体管的性能(如阈值电压Vth、亚阈值摆幅S.S等)改变，也可能使得器件中的层与层之间出现分层现象，从而导致器件性能的下降，进而降低使用寿命。
发明内容
为了解决上述现有技术存在的问题，本发明的目的在于提供一种具有良好的弯折性能且能够提高器件的应力释放能力的柔性显示面板及其制作方法。
根据本发明的一方面，提供了一种柔性显示面板，其包括：柔性基板；有机材料层，设置于所述柔性基板上，所述有机材料层包括多个凹槽；多个薄膜晶体管，容置于所述多个凹槽中；平坦层，设置于所述有机材料层和所述多个薄膜晶体管上；像素限定层，设置于所述平坦层上，所述像素限定层包括多个开口；多个有机发光二极管器件，容置于所述多个开口中；封装层，设置于所 述多个有机发光二极管器件和所述像素限定层上。
进一步地，所述凹槽与所述开口一一对应，每个凹槽与对应的一个开口相对。
进一步地，每个凹槽容置至少一个薄膜晶体管，所述薄膜晶体管包括：有源层；第一绝缘层，设置于所述有源层上；栅极，设置于所述第一绝缘层上；第二绝缘层，设置于所述栅极和所述第一绝缘层上；第二金属层，设置于所述第二绝缘层上；层间绝缘层，设置于所述第二绝缘层和所述第二金属层上；源极和漏极，设置于所述层间绝缘层上，所述源极和所述漏极贯穿所述层间绝缘层、所述第二绝缘层和所述第一绝缘层以分别与所述有源层接触。
进一步地，每个开口容置一个有机发光二极管器件，所述有机发光二极管器件包括：阳极，贯穿所述平坦层以与所述薄膜晶体管的漏极接触；有机发光功能层，设置于所述阳极上；阴极，设置于所述有机发光功能层上。
进一步地，所述柔性显示面板还包括：多个支撑体，设置于所述像素限定层和所述封装层之间。
根据本发明的另一方面，还提供了一种柔性显示面板的制作方法，其包括：在柔性基板上形成包括多个凹槽的有机材料层；在所述凹槽中形成薄膜晶体管；在所述有机材料层和所述多个薄膜晶体管上形成平坦层；在所述平坦层上形成包括多个开口的像素限定层；在所述开口中形成有机发光二极管器件；在所述多个有机发光二极管器件和所述像素限定层上形成封装层。
进一步地，所述在每个凹槽中形成薄膜晶体管的方法包括：在所述凹槽中形成有源层；在所述有源层上形成第一绝缘层；在所述第一绝缘层上形成栅极；在所述栅极和所述第一绝缘层上形成第二绝缘层；在所述第二绝缘层上形成第二金属层；在所述第二绝缘层和所述第二金属层上形成层间绝缘层；在所述层间绝缘层上形成贯穿所述层间绝缘层、所述第二绝缘层和所述第一绝缘层以分别与所述有源层接触的源极和漏极。
进一步地，所述在所述开口中形成有机发光二极管器件的方法包括：在所述开口中形成贯穿所述平坦层以与所述薄膜晶体管接触的阳极；在所述阳极上 形成有机发光功能层；在所述有机发光功能层上形成阴极。
进一步地，在所述多个有机发光二极管器件和所述像素限定层上形成封装层之前，所述柔性显示面板的还包括：在所述像素限定层上形成多个支撑体。
本发明的有益效果：本发明的形成的具有凹槽的有机材料层具有良好的弯折性能，可提高器件的应力吸收释放能力，可以避免在不断地弯折中发生的薄膜晶体管的性能(如阈值电压Vth、亚阈值摆幅S.S等)的变化，也不易出现器件断裂和膜层分层的情况，从而增加器件的使用寿命。此外，具有凹槽的有机材料层既能起到一定的隔绝水汽和氧气的作用，又能避免相邻薄膜晶体管之间的电信号干扰。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的柔性显示面板的结构示意图；
图2A至图2G是根据本发明的实施例的柔性显示面板的制程图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中，为了清楚起见，夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。
将理解的是，当诸如层、膜、区域或基底等的元件被称作“在”或“形成在”另一元件“上”时，该元件可以直接在或形成在所述另一元件上，或者也可以存在中间元件。可选择地，当元件被称作“直接在”或者“直接形成在”另一元件“上”时，不存在中间元件。
图1是根据本发明的实施例的柔性显示面板的结构示意图。
参照图1，根据本发明的实施例的柔性显示面板包括柔性基板100、有机材料层200、多个薄膜晶体管300、平坦层400、像素限定层500、多个有机发光二极管器件600、多个支撑体700和封装层800。
具体地，柔性基板100可例如由聚酰亚胺制成，但本发明并不限制于此。有机材料层200设置于柔性基板100上。
有机材料层200是电绝缘的，并且其具有较好的隔绝水汽和氧气的能力。有机材料层200包括多个凹槽210，凹槽210的开口背向柔性基板100。作为本发明的一实施方式，多个凹槽210可以阵列排布，但本发明并不限制于此。
每个凹槽210中容置至少一个薄膜晶体管300。作为本发明的一实施方式，薄膜晶体管300包括：有源层310；第一绝缘层320，设置于有源层310上；栅极330，设置于第一绝缘层320上；第二绝缘层340，设置于栅极330和第一绝缘层320上；第二金属层350，设置于第二绝缘层340上；层间绝缘层360，设置于第二绝缘层340和第二金属层350上；源极370和漏极380，设置于层间绝缘层360上，源极370和漏极380贯穿层间绝缘层360、第二绝缘层340和第一绝缘层320以分别与有源层310接触。这里，薄膜晶体管300的结构仅作为一种示例，本发明的薄膜晶体管的结构并不限制于此，其可以是现有的任何用于显示面板中的薄膜晶体管。
在本实施例中，有源层310可例如由多晶硅制成，但本发明并不限制于此。此外，栅极330与第二金属层350形成电容器，其中栅极330即作为晶体管的栅极使用，又可以作为电容器的一个电极使用，而第二金属层350作为电容器的另一个电极使用。作为本发明的另一实施方式，当不需要使用电容器时，相应的第二金属层350可以被省去，并且相应的层间绝缘层360或者第二绝缘层340也可以被省去。
平坦层400设置于有机材料层200和多个晶体管300上，以起到平坦化的作用。
像素限定层500设置于平坦层400上。像素限定层500包括多个开口510。 进一步地，开口510与凹槽210一一对应，并且每个开口510与对应的一个凹槽210彼此相对或正对。也就是说，开口510在凹槽210内的投影位于凹槽210以内，即凹槽210的槽壁位于相邻的两个开口510之间，从而避免槽壁影响开口510的透光效果。
每个开口510中容置有有机发光二极管器件600。在本实施例中，有机发光二极管器件600包括：阳极610，贯穿平坦层400以与漏极380接触；有机发光功能层620，设置于阳极610上；阴极630，设置于有机发光功能层620上。阳极610和阴极630中的一个是反光的，另一个是透光的。有机发光功能层620从阳极610到阴极630顺序包括：空穴发生层、空穴传输层、有机发光层、电子传输层、电子注入层，但本发明的有机发光功能层620的结构并不限制于此。
此外，有机发光二极管器件600可以是红光有机发光二极管器件、绿光有机发光二极管器件或者蓝光有机发光二极管器件，并且多个有机发光二极管器件600中包括至少一个红光有机发光二极管器件、至少一个绿光有机发光二极管器件和至少一个蓝光有机发光二极管器件。
多个支撑体700设置于像素限定层500上。本实施例中，支撑体700可例如由聚苯乙烯材料制成，但本发明并不限制于此。支撑体700的作用是在蒸镀膜层时为了避免光罩与基板接触，从而防止划伤基板。因此，作为本发明的另一实施方式，也可以不包括支撑体700。
封装层800设置于像素限定层500、多个有机发光二极管器件600和多个支撑体700上。封装层800具有较好的隔绝水汽和氧气的能力，以表面水汽和氧气侵蚀有机发光二极管器件600。
综上，根据本发明的实施例的柔性显示面板，形成的具有凹槽的有机材料层具有良好的弯折性能，可提高器件的应力吸收释放能力，可以避免在不断地弯折中发生的薄膜晶体管的性能(如阈值电压Vth、亚阈值摆幅S.S等)的变化，也不易出现器件断裂和膜层分层的情况，从而增加器件的使用寿命。此外，具有凹槽的有机材料层既能起到一定的隔绝水汽和氧气的作用，又能避免相邻薄膜晶体管之间的电信号干扰。
以下对根据本发明的实施例的柔性显示面板的制作方法进行详细描述。图2A至图2G是根据本发明的实施例的柔性显示面板的制程图。
步骤一：参照图2A，在柔性基板100上形成包括多个凹槽210的有机材料层200。具体地方法是：先在柔性基板100上涂布一层有机层；而后利用曝光、显影、刻蚀等方法在有机层中形成多个凹槽210，从而形成有机材料层200。
步骤二：参照图2B，在凹槽210中形成薄膜晶体管300。
这里，制作形成薄膜晶体管300的具体方法包括：首先，在凹槽210中形成有源层310；其次，在有源层310上形成第一绝缘层320；接着，在第一绝缘层320上形成栅极330；接着，在栅极330和第一绝缘层320上形成第二绝缘层340；接着，在第二绝缘层340上形成第二金属层350；接着，在第二绝缘层340和第二金属层350上形成层间绝缘层360；接着，在层间绝缘层360上形成贯穿层间绝缘层360、第二绝缘层340和第一绝缘层320以分别与有源层310接触的源极370和漏极380。
这里，作为本发明的另一实施方式，当第二金属层350不存在时，相应的步骤可以被省略。用样地，当层间绝缘层360或者第二绝缘层340不存在时，也可以将相应的步骤省略。
步骤三：参照图2C，在有机材料层200和多个薄膜晶体管300上形成平坦层400。这里，平坦层400起到平坦化的效果。
步骤四：参照图2D，在平坦层400上形成包括多个开口510的像素限定层500。这里，开口510与凹槽210一一对应，并且每个开口510与对应的一个凹槽210彼此相对或正对。也就是说，开口510在凹槽210内的投影位于凹槽210以内，即凹槽210的槽壁位于相邻的两个开口510之间，从而避免槽壁影响开口510的透光效果。
步骤五：参照图2E，在开口510中形成有机发光二极管器件600。
这里，制作形成有机发光二极管器件600的具体方法包括：首先，在开口510中形成贯穿平坦层400以与薄膜晶体管300的漏极380接触的阳极610；其次，在阳极610上形成有机发光功能层620；最后，在有机发光功能层620 上形成阴极630。作为本发明的另一实施方式，形成阳极610的步骤可以在步骤三和步骤四之间进行。
步骤六：参照图2F，在像素限定层500上形成多个支撑体700。作为本发明的另一实施方式，当支撑体700不存在时，可以将步骤六省略。
步骤七：参照图2G，在像素限定层500、多个有机发光二极管器件600和多个支撑体700上形成封装层800。
综上所述，根据本发明的实施例的柔性显示面板及其制作方法，形成的具有凹槽的有机材料层具有良好的弯折性能，可提高器件的应力吸收释放能力，可以避免在不断地弯折中发生的薄膜晶体管的性能(如阈值电压Vth、亚阈值摆幅S.S等)的变化，也不易出现器件断裂和膜层分层的情况，从而增加器件的使用寿命。此外，具有凹槽的有机材料层既能起到一定的隔绝水汽和氧气的作用，又能避免相邻薄膜晶体管之间的电信号干扰。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (14)

  1. 一种柔性显示面板，其中，包括：
    柔性基板；
    有机材料层，设置于所述柔性基板上，所述有机材料层包括多个凹槽；
    多个薄膜晶体管，容置于所述多个凹槽中；
    平坦层，设置于所述有机材料层和所述多个薄膜晶体管上；
    像素限定层，设置于所述平坦层上，所述像素限定层包括多个开口；
    多个有机发光二极管器件，容置于所述多个开口中；
    封装层，设置于所述多个有机发光二极管器件和所述像素限定层上。
  2. 根据权利要求1所述的柔性显示面板，其中，所述凹槽与所述开口一一对应，每个凹槽与对应的一个开口相对。
  3. 根据权利要求1所述的柔性显示面板，其中，每个凹槽容置至少一个薄膜晶体管，所述薄膜晶体管包括：
    有源层；
    第一绝缘层，设置于所述有源层上；
    栅极，设置于所述第一绝缘层上；
    第二绝缘层，设置于所述栅极和所述第一绝缘层上；
    第二金属层，设置于所述第二绝缘层上；
    层间绝缘层，设置于所述第二绝缘层和所述第二金属层上；
    源极和漏极，设置于所述层间绝缘层上，所述源极和所述漏极贯穿所述层间绝缘层、所述第二绝缘层和所述第一绝缘层以分别与所述有源层接触。
  4. 根据权利要求2所述的柔性显示面板，其中，每个凹槽容置至少一个薄膜晶体管，所述薄膜晶体管包括：
    有源层；
    第一绝缘层，设置于所述有源层上；
    栅极，设置于所述第一绝缘层上；
    第二绝缘层，设置于所述栅极和所述第一绝缘层上；
    第二金属层，设置于所述第二绝缘层上；
    层间绝缘层，设置于所述第二绝缘层和所述第二金属层上；
    源极和漏极，设置于所述层间绝缘层上，所述源极和所述漏极贯穿所述层间绝缘层、所述第二绝缘层和所述第一绝缘层以分别与所述有源层接触。
  5. 根据权利要求1所述的柔性显示面板，其中，每个开口容置一个有机发光二极管器件，所述有机发光二极管器件包括：
    阳极，贯穿所述平坦层以与所述薄膜晶体管的漏极接触；
    有机发光功能层，设置于所述阳极上；
    阴极，设置于所述有机发光功能层上。
  6. 根据权利要求2所述的柔性显示面板，其中，每个开口容置一个有机发光二极管器件，所述有机发光二极管器件包括：
    阳极，贯穿所述平坦层以与所述薄膜晶体管的漏极接触；
    有机发光功能层，设置于所述阳极上；
    阴极，设置于所述有机发光功能层上。
  7. 根据权利要求1所述的柔性显示面板，其中，所述柔性显示面板还包括：多个支撑体，设置于所述像素限定层和所述封装层之间。
  8. 一种柔性显示面板的制作方法，其中，包括：
    在柔性基板上形成包括多个凹槽的有机材料层；
    在所述凹槽中形成薄膜晶体管；
    在所述有机材料层和所述多个薄膜晶体管上形成平坦层；
    在所述平坦层上形成包括多个开口的像素限定层；
    在所述开口中形成有机发光二极管器件；
    在所述多个有机发光二极管器件和所述像素限定层上形成封装层。
  9. 根据权利要求8所述的柔性显示面板的制作方法，其中，所述凹槽与所述开口一一对应，每个凹槽与对应的一个开口相对。
  10. 根据权利要求8所述的柔性显示面板的制作方法，其中，所述在每个凹槽中形成薄膜晶体管的方法包括：
    在所述凹槽中形成有源层；
    在所述有源层上形成第一绝缘层；
    在所述第一绝缘层上形成栅极；
    在所述栅极和所述第一绝缘层上形成第二绝缘层；
    在所述第二绝缘层上形成第二金属层；
    在所述第二绝缘层和所述第二金属层上形成层间绝缘层；
    在所述层间绝缘层上形成贯穿所述层间绝缘层、所述第二绝缘层和所述第一绝缘层以分别与所述有源层接触的源极和漏极。
  11. 根据权利要求9所述的柔性显示面板的制作方法，其中，所述在每个凹槽中形成薄膜晶体管的方法包括：
    在所述凹槽中形成有源层；
    在所述有源层上形成第一绝缘层；
    在所述第一绝缘层上形成栅极；
    在所述栅极和所述第一绝缘层上形成第二绝缘层；
    在所述第二绝缘层上形成第二金属层；
    在所述第二绝缘层和所述第二金属层上形成层间绝缘层；
    在所述层间绝缘层上形成贯穿所述层间绝缘层、所述第二绝缘层和所述第一绝缘层以分别与所述有源层接触的源极和漏极。
  12. 根据权利要求8所述的的制作方法，其中，所述在所述开口中形成有机发光二极管器件的方法包括：
    在所述开口中形成贯穿所述平坦层以与所述薄膜晶体管接触的阳极；
    在所述阳极上形成有机发光功能层；
    在所述有机发光功能层上形成阴极。
  13. 根据权利要求9所述的的制作方法，其中，所述在所述开口中形成有机发光二极管器件的方法包括：
    在所述开口中形成贯穿所述平坦层以与所述薄膜晶体管接触的阳极；
    在所述阳极上形成有机发光功能层；
    在所述有机发光功能层上形成阴极。
  14. 根据权利要求8所述的柔性显示面板的制作方法，其中，在所述多个有机发光二极管器件和所述像素限定层上形成封装层之前，所述柔性显示面板的还包括：在所述像素限定层上形成多个支撑体。
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