WO2019171515A1 - Dispositif convertisseur - Google Patents

Dispositif convertisseur Download PDF

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Publication number
WO2019171515A1
WO2019171515A1 PCT/JP2018/008852 JP2018008852W WO2019171515A1 WO 2019171515 A1 WO2019171515 A1 WO 2019171515A1 JP 2018008852 W JP2018008852 W JP 2018008852W WO 2019171515 A1 WO2019171515 A1 WO 2019171515A1
Authority
WO
WIPO (PCT)
Prior art keywords
reactor
substrate
switching element
power supply
group
Prior art date
Application number
PCT/JP2018/008852
Other languages
English (en)
Japanese (ja)
Inventor
章斗 田中
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2020504571A priority Critical patent/JP6896143B2/ja
Priority to PCT/JP2018/008852 priority patent/WO2019171515A1/fr
Publication of WO2019171515A1 publication Critical patent/WO2019171515A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

Definitions

  • the present invention relates to a converter device including a plurality of reactors.
  • the output of the rectifier circuit is branched into a plurality of current paths, and a plurality of series circuits including a reactor and a switching element are provided in parallel with each other.
  • the switching element is off, the current output from the reactor provided in each of the plurality of series circuits is supplied to the smoothing capacitor via the backflow prevention diode.
  • the switching elements provided in each of the plurality of series circuits are driven with different phases. Thereby, the current flowing through each of the plurality of switching elements is suppressed, and the ripple component of the current output from the reactor is suppressed.
  • a switching element composed of silicon (Si) or silicon carbide (SiC) is used as the switching element.
  • Si silicon
  • SiC silicon carbide
  • the size of the switching element becomes large, and since a large amount of heat is generated during operation, it is necessary to take heat dissipation measures such as providing a heat sink. For this reason, the mounting area of the booster circuit is increased on the power supply circuit board, and the mounting area of the booster circuit occupies a large proportion on the power supply circuit board, and the mountable area of elements other than the booster circuit is reduced. It was.
  • the present invention has been made in view of the above, and an object of the present invention is to obtain a converter device capable of expanding the mountable area of elements other than the elements constituting the booster circuit in the power supply circuit board. To do.
  • a converter device includes a first substrate, a second substrate that is a substrate different from the first substrate, and a reactor.
  • the first substrate includes a rectifier circuit that rectifies an AC voltage output from an AC power supply, and a smoothing capacitor that smoothes the output voltage of the booster that boosts the output voltage of the rectifier circuit.
  • the second substrate includes a switching element that constitutes a booster together with the reactor, and a backflow prevention element that constitutes a booster together with the reactor and the switching element.
  • the converter device according to the present invention has an effect that the mountable area of elements other than the elements constituting the booster circuit can be increased in the power supply circuit board.
  • FIG. 1 is a configuration diagram illustrating an example of a converter device according to an embodiment of the present invention.
  • the converter device 100 according to the present embodiment is a device that converts AC power supplied from an AC power source 1 that is a single-phase AC power source into DC power and supplies the DC power to a load 2.
  • Converter device 100 is applicable to, for example, a power converter of a motor drive device, an air conditioner, a refrigerator, and a heat pump hot water supply device.
  • the converter device 100 shown in FIG. 1 includes a power circuit board 10, another board 20 that is a board different from the power circuit board 10, and a reactor group 31.
  • the power circuit board 10 corresponds to the first board.
  • the separate substrate 20 corresponds to the second substrate.
  • the separate substrate 20 includes a MOSFET (Metal Oxide Semiconductor-Field Effect Transistor) group 21, which is a switching element group configured using gallium nitride (GaN), and a diode group 22.
  • the reactor group 31, the MOSFET group 21, and the diode group 22 constitute a boosting unit 40.
  • the power supply circuit board 10 is provided between an inrush current prevention circuit 11 for preventing an inrush current, and the AC power supply 1 and the inrush current prevention circuit 11, and is superposed on a current output from the AC power supply 1.
  • a noise filter 12 that reduces noise, and a rectifier circuit 13 that rectifies an AC voltage output from the AC power supply 1 via the noise filter 12 and the inrush current prevention circuit 11 are provided.
  • the power supply circuit board 10 includes a smoothing capacitor 14 that smoothes the voltage boosted by the booster 40 and a shunt resistor 15 for detecting a bus current.
  • the power supply circuit board 10 includes a bus current detection circuit 16 that is a current detection circuit connected to the negative output terminal 13 b of the rectifier circuit 13, and a control unit 17.
  • Examples of the rectifier circuit 13 include a full-wave rectifier circuit configured by combining four diodes.
  • the rectifier circuit 13 may be configured by combining MOSFETs other than diodes.
  • the positive terminal of the smoothing capacitor 14 is connected to the positive DC bus P.
  • the negative terminal of the smoothing capacitor 14 is connected to the negative DC bus N.
  • the booster 40 boosts the voltage rectified by the rectifier circuit 13.
  • the MOSFET group 21 includes MOSFETs 21a, 21b, and 21c that are three switching elements.
  • the diode group 22 includes three backflow prevention diodes 22a, 22b, and 22c.
  • the backflow prevention diodes 22a, 22b, and 22c are examples of backflow prevention elements.
  • the drain of the MOSFET 21a is connected to the anode of the backflow prevention diode 22a, and the source of the MOSFET 21a is connected to one end of the shunt resistor 15. The other end of the shunt resistor 15 is connected to the negative DC bus N.
  • a PWM (Pulse Width Modulation) drive signal X generated by the control unit 17 is input to the gate of the MOSFET 21a.
  • the PWM drive signal X is a signal for turning on and off the MOSFET 21a.
  • the cathode of the backflow prevention diode 22 a is connected to the positive side DC bus P of the power circuit board 10.
  • the drain of the MOSFET 21b is connected to the anode of the backflow prevention diode 22b, and the source of the MOSFET 21b is connected to one end of the shunt resistor 15.
  • the PWM drive signal Y generated by the control unit 17 is input to the gate of the MOSFET 21b.
  • the PWM drive signal Y is a signal for turning on and off the MOSFET 21b.
  • the cathode of the backflow prevention diode 22 b is connected to the positive DC bus P of the power circuit board 10.
  • the drain of the MOSFET 21c is connected to the anode of the backflow prevention diode 22c, and the source of the MOSFET 21c is connected to one end of the shunt resistor 15.
  • the PWM drive signal Z generated by the control unit 17 is input to the gate of the MOSFET 21c.
  • the PWM drive signal Z is a signal for turning on and off the MOSFET 21c.
  • the cathode of the backflow prevention diode 22 c is connected to the positive DC bus P of the power circuit board 10.
  • the reactor group 31 includes three reactors 31a, 31b, and 31c connected in parallel. One end of each of the three reactors 31a, 31b, 31c is connected to the positive output terminal 13a of the rectifier circuit 13. The other end of the reactor 31a is connected to the MOSFET 21a and the backflow prevention diode 22a. The other end of the reactor 31b is connected to the MOSFET 21b and the backflow prevention diode 22b. The other end of the reactor 31c is connected to the MOSFET 21c and the backflow prevention diode 22c. Each of the three reactors 31a, 31b, and 31c uses a core with a small harmonic iron loss.
  • the core is controlled by the control unit 17 by the boost unit 40, the power conversion efficiency of the converter device 100, and the boost It may be selected in consideration of factors such as the amount of heat generated in the unit 40, the weight of the converter device 100, and the volume of the converter device 100.
  • the reactor group 31 may be provided at a location different from the power circuit board 10 and the separate substrate 20 or may be mounted on the separate substrate 20.
  • the booster 40 is configured by connecting boosters 41a, 41b, and 41c in parallel with reactors 31a, 31b, and 31c, MOSFETs 21a, 21b, and 21c, and backflow prevention diodes 22a, 22b, and 22c, respectively. .
  • converter device 100 configured in this way, AC power supplied from AC power supply 1 is input to rectifier circuit 13 via noise filter 12 and inrush current prevention circuit 11, and AC power input to rectifier circuit 13 is input. Full-wave rectification.
  • the power that has been full-wave rectified by the rectifier circuit 13 is boosted by the booster 40, and the power boosted by the booster 40 is smoothed by the smoothing capacitor 14 and supplied to the load 2.
  • the MOSFET group 21 and the diode group 22 constituting the boosting unit 40 are provided on the separate substrate 20 which is a substrate different from the power supply circuit substrate 10.
  • the mountable area of elements other than the elements constituting the boosting unit 40 is increased. Can be enlarged.
  • the power circuit board 10 and the separate board 20 are different boards. Therefore, it is not necessary to significantly change the wiring pattern of the power circuit board 10 between the case where the booster 40 is necessary and the case where it is not necessary, and the power circuit board 10 can be easily shared.
  • the MOSFET group 21 is a switching element group configured using GaN.
  • the size of the switching element is reduced and the amount of heat generated during operation is small as compared with the switching element configured using Si or SiC.
  • the switching element can be downsized, the heat sink can be downsized, or a heat sink can be eliminated, and the separate substrate 20 can be downsized.
  • the heat sink provided on the separate substrate 20 can be reduced in size, and for example, a heat sink different from the heat sink provided on the inverter device can be used, so that the degree of freedom of arrangement of the heat sink provided on the separate substrate 20 is increased. Can do.
  • the boosting unit 40 includes three boosting circuits each including a reactor, a switching element, and a backflow prevention diode.
  • the boosting unit 40 includes a reactor, a switching element, and a backflow prevention diode.
  • One boosting circuit may be provided, or two or four or more boosting circuits including a reactor, a switching element, and a backflow prevention diode may be provided in parallel.
  • the configuration described in the above embodiment shows an example of the contents of the present invention, and can be combined with another known technique, and can be combined with other configurations without departing from the gist of the present invention. It is also possible to omit and change the part.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Rectifiers (AREA)
  • Inverter Devices (AREA)

Abstract

L'invention concerne un dispositif convertisseur (100) comprenant : une carte de circuit imprimé d'alimentation électrique (10) ; une carte séparée (20) qui est séparée de la carte de circuit imprimé d'alimentation électrique (10) ; et un groupe de réacteurs (31). La carte de circuit imprimé d'alimentation électrique (10) comprend : un circuit de redressement (13) qui redresse une sortie de tension alternative provenant d'une alimentation en courant alternatif (1) ; et un condensateur de lissage (14) qui lisse une tension de sortie d'une unité d'amplification de tension (40) qui amplifie une tension de sortie du circuit de redressement (13). La carte séparée (20) comprend : un groupe MOSFET (21) qui constitue l'unité d'amplification de tension (40) conjointement avec le groupe de réacteurs (31) ; et un groupe de diodes (22) qui constitue l'unité d'amplification de tension (40) conjointement avec le groupe de réacteurs (31) et le groupe MOSFET (21).
PCT/JP2018/008852 2018-03-07 2018-03-07 Dispositif convertisseur WO2019171515A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020504571A JP6896143B2 (ja) 2018-03-07 2018-03-07 コンバータ装置
PCT/JP2018/008852 WO2019171515A1 (fr) 2018-03-07 2018-03-07 Dispositif convertisseur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/008852 WO2019171515A1 (fr) 2018-03-07 2018-03-07 Dispositif convertisseur

Publications (1)

Publication Number Publication Date
WO2019171515A1 true WO2019171515A1 (fr) 2019-09-12

Family

ID=67846720

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/008852 WO2019171515A1 (fr) 2018-03-07 2018-03-07 Dispositif convertisseur

Country Status (2)

Country Link
JP (1) JP6896143B2 (fr)
WO (1) WO2019171515A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010023978A1 (fr) * 2008-09-01 2010-03-04 三菱電機株式会社 Circuit convertisseur, unité de commande d’entraînement de moteur dotée d’un circuit convertisseur, climatiseur, réfrigérateur et dispositif de cuisson par induction
JP2013106469A (ja) * 2011-11-15 2013-05-30 Toshiba Lighting & Technology Corp スイッチング電源装置及び照明装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10084383B2 (en) * 2015-03-27 2018-09-25 Mitsubishi Electric Corporation Booster device and converter device
CA3015049C (fr) * 2016-02-24 2021-02-16 Mitsubishi Electric Corporation Dispositif convertisseur

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010023978A1 (fr) * 2008-09-01 2010-03-04 三菱電機株式会社 Circuit convertisseur, unité de commande d’entraînement de moteur dotée d’un circuit convertisseur, climatiseur, réfrigérateur et dispositif de cuisson par induction
JP2013106469A (ja) * 2011-11-15 2013-05-30 Toshiba Lighting & Technology Corp スイッチング電源装置及び照明装置

Also Published As

Publication number Publication date
JP6896143B2 (ja) 2021-06-30
JPWO2019171515A1 (ja) 2020-08-06

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