WO2019170022A1 - 一种GaN HEMT器件及制备方法 - Google Patents

一种GaN HEMT器件及制备方法 Download PDF

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WO2019170022A1
WO2019170022A1 PCT/CN2019/076322 CN2019076322W WO2019170022A1 WO 2019170022 A1 WO2019170022 A1 WO 2019170022A1 CN 2019076322 W CN2019076322 W CN 2019076322W WO 2019170022 A1 WO2019170022 A1 WO 2019170022A1
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gate
dielectric layer
gate dielectric
layer
region
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PCT/CN2019/076322
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English (en)
French (fr)
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张力江
高渊
周国
宋洁晶
刘相伍
崔玉兴
付兴昌
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中国电子科技集团公司第十三研究所
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Publication of WO2019170022A1 publication Critical patent/WO2019170022A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7788—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Definitions

  • the present application relates to the field of semiconductor device technology, and in particular, to a GaN HEMT device and a method for fabricating the same.
  • GaN HEMT High Electron Mobility Transistor (High Electron Mobility Transistor) devices have excellent power and frequency characteristics, high breakdown and low noise, and are widely used in mobile communications, radar and other fields.
  • GaN HEMT High Electron Mobility Transistor
  • the engraving of the gate becomes the key to affect the frequency characteristics of the device.
  • the gate registration deviation and process fluctuation will cause parasitic parameters to change, which directly affects the frequency characteristics of the device.
  • the embodiments of the present application provide a GaN HEMT device and a preparation method thereof to solve GaN.
  • the fluctuation of the gate engraving process causes the parasitic parameter to change, thereby affecting the frequency characteristics of the device.
  • a first aspect of an embodiment of the present application provides a GaN HEMT device including a substrate, the upper surface of which is provided with a GaN epitaxial layer and a gate dielectric layer in order from bottom to top, and further includes a gate, a source electrode, and a drain pole;
  • the gate, the source electrode and the drain electrode are in contact with the GaN epitaxial layer through the gate dielectric layer;
  • the gate dielectric layer includes a first gate dielectric layer and a second gate dielectric layer of different properties
  • a first gate trench penetrating through the first gate dielectric layer is disposed on the first gate dielectric layer, and a second gate trench penetrating through the second gate dielectric layer is disposed on the second gate dielectric layer; wherein The first gate groove corresponds to the second gate groove position;
  • the gate includes a gate metal filling the first gate trench and the second gate trench, and a gate cap disposed on the upper surface of the second dielectric layer and covering the second gate trench;
  • the source and drain electrodes are located on both sides of the gate.
  • the first gate dielectric layer has a thickness of 100 nm to 200 nm; and the second gate dielectric layer has a thickness of 50 nm to 100 nm.
  • the gate length is 0.15 ⁇ m-0.5 ⁇ m.
  • a second aspect of the embodiments of the present application provides a method for fabricating a GaN HEMT device, including:
  • first gate dielectric layer on the upper surface of the GaN epitaxial layer, and forming a second gate dielectric layer on the upper surface of the first gate dielectric layer;
  • the active region includes a source electrode region, a drain electrode region, and a gate region;
  • the gate includes a gate metal filling the first gate trench and the second gate trench, and surface covering on the second gate dielectric layer a gate cap of the second gate trench;
  • a source electrode and a drain electrode are formed on the source electrode region and the drain electrode region on both sides of the gate.
  • a first gate dielectric layer is formed on the upper surface of the GaN epitaxial layer, and a second gate dielectric layer is formed on the upper surface of the first gate dielectric layer, including:
  • first gate dielectric layer having a thickness of 100 nm to 200 nm by a high density plasma chemical vapor deposition process on the upper surface of the GaN epitaxial layer;
  • a second gate dielectric layer having a thickness of 50 nm to 100 nm is prepared on the upper surface of the first gate dielectric layer by a plasma enhanced chemical vapor deposition process.
  • a first gate dielectric layer is formed on the upper surface of the GaN epitaxial layer, and a second gate dielectric layer is formed on the upper surface of the first gate dielectric layer, including:
  • Adjusting plasma enhanced chemical vapor deposition process parameters including combinations of one or more of radio frequency power, silicon to nitrogen ratio, or gas flow pressure;
  • a second gate dielectric layer having a thickness of 50 nm to 100 nm is prepared on the upper surface of the first gate dielectric layer by a plasma enhanced chemical vapor deposition process.
  • a second gate trench penetrating through the second gate dielectric layer is formed in the gate region of the second gate dielectric layer, and a first through the first gate dielectric layer is formed on the first gate dielectric layer
  • a grid slot including:
  • the first photoresist layer is removed.
  • the first gate dielectric layer has an etch rate of 50 nm/min to 80 nm/min; and the second gate dielectric layer has an etch rate of 100 nm/min to 160 nm/min.
  • the first gate dielectric layer and the second gate dielectric layer and the photoresist etching selection ratio are greater than 3:1.
  • the source electrode and the drain electrode are formed on the source electrode region and the drain electrode region on both sides of the gate, and the method includes:
  • the metal other than the source and drain electrodes is stripped to remove the second photoresist layer.
  • a GaN HEMT device of the embodiment of the present invention effectively reduces gate parasitic capacitance and improves device frequency characteristics by opening a double groove structure gate groove at a corresponding position of two different gate dielectric layers;
  • the preparation method of the embodiment of the present application is simple in operation, and the etching ratio of the gate dielectric layer of the two different properties is adjusted by the etching process to select a gate groove of the double groove structure to avoid the gate engraving. Variations in parasitic parameters caused by process fluctuations, thereby reducing process difficulty and cost, and improving process stability.
  • FIG. 1 is a cross-sectional view showing the structure of a GaN HEMT device provided in Embodiment 1 of the present application;
  • FIG. 2 is a cross-sectional view showing the structure of a method for fabricating a GaN HEMT device according to Embodiment 2 of the present application;
  • FIG. 3 is a schematic diagram showing an implementation flow of a method for fabricating a GaN HEMT device according to Embodiment 2 of the present application;
  • the GaN HEMT device in this embodiment includes a substrate, and an upper surface of the substrate is provided with a GaN epitaxial layer and a gate dielectric layer in this order from bottom to top, and further includes a gate electrode, a source electrode, and a drain electrode; The source electrode and the drain electrode are in contact with the GaN epitaxial layer through the gate dielectric layer; the gate dielectric layer includes a first gate dielectric layer and a second gate dielectric layer of different properties; the first gate dielectric layer is opened a second gate trench penetrating through the second gate dielectric layer is disposed through the first gate trench of the first gate dielectric layer; wherein the first gate trench and the second gate trench are disposed Correspondingly; the gate includes a gate metal filling the first gate trench and the second gate trench, and a gate cap disposed on the upper surface of the second dielectric layer and covering the second gate trench; the source Electrodes and drain electrodes are located on either side of the gate.
  • the first gate dielectric layer has a thickness of 100 nm to 200 nm; and the second gate dielectric layer has a thickness of 50 nm to 100 nm.
  • the gate length is 0.15 ⁇ m-0.5 ⁇ m.
  • the GaN HEMT device in this embodiment includes a substrate 101, which may be a semiconductor material such as SiC or Si.
  • a GaN epitaxial layer 102, a first gate dielectric layer 103 having a thickness of 100 nm to 200 nm, and a second gate dielectric layer 104 having a thickness of 50 nm to 100 nm are sequentially disposed.
  • the first gate dielectric layer 103 and the second gate dielectric layer 104 are made of different materials, and may be materials of different densities of the same type, for example, materials of different densities such as SiN and SiO 2 .
  • a first gate trench 108 is formed in the first gate dielectric layer 103, and a second gate trench 109 is formed in the second gate dielectric layer 104.
  • the first gate trench is formed in the second gate dielectric layer 104.
  • 108 is in communication with the second gate trench 109, and the first gate trench 108 corresponds to the second gate trench 109 and is a gate trench having a symmetrical structure at a central position, thereby forming a double recess gate trench.
  • the gate electrode 105 includes a gate metal filled with the first gate trench 108 and the second gate trench 109 and a gate cap disposed on the upper surface of the second dielectric layer 104 and covering the second gate trench.
  • the gate electrode 105 has a length of 0.15 ⁇ m to 0.5 ⁇ m, and the gate electrode 105 forms a Schottky contact with the GaN epitaxial layer 102 through the gate dielectric layer for controlling the channel current of the HEMT device.
  • the source electrode 106 and the drain electrode 107 located on both sides of the gate electrode 105 penetrate the gate dielectric layer to form an ohmic contact with the GaN epitaxial layer 102.
  • the positional correspondence means that the first gate trench 108 and the second gate trench 109 have the same orthographic projection shape on the upper surface of the GaN epitaxial layer 102, and the first gate trench 108 coincides with the center of the second gate trench 109, first The projection area corresponding to the gate groove 108 is included in the projection area corresponding to the second gate groove 109.
  • a GaN HEMT device of the embodiment of the present invention effectively reduces the gate parasitic capacitance and improves the frequency characteristics of the device by opening a double groove structure gate groove at corresponding positions of the gate dielectric layers of two different properties.
  • FIG. 2 is a cross-sectional view showing the structure of a method for fabricating a GaN HEMT device.
  • the GaN HEMT device includes a substrate 101, a GaN epitaxial layer 102, a first gate dielectric layer 103, and a second gate dielectric layer 104.
  • the embodiment discloses a method for preparing a GaN HEMT device, which is described in detail as follows:
  • Step S301 selecting a semiconductor material as a substrate, and growing a GaN epitaxial layer on the surface of the substrate.
  • the substrate may be SiC, Si or the like.
  • Step S302 forming a first gate dielectric layer on the upper surface of the GaN epitaxial layer, and forming a second gate dielectric layer on the upper surface of the first gate dielectric layer.
  • step S302 is: performing high-density plasma chemical vapor deposition on the upper surface of the GaN epitaxial layer (High Density Plasma Chemical Vapor) Deposition, HDPCVD) process to prepare a first gate dielectric layer having a thickness of 100 nm to 200 nm;
  • high-density plasma chemical vapor deposition on the upper surface of the GaN epitaxial layer (High Density Plasma Chemical Vapor) Deposition, HDPCVD) process to prepare a first gate dielectric layer having a thickness of 100 nm to 200 nm;
  • Plasma enhanced chemical vapor deposition on the upper surface of the first gate dielectric layer (Plasma The Enhanced Chemical Vapor Deposition (PECVD) process produces a second gate dielectric layer having a thickness of 50 nm to 100 nm.
  • the first gate dielectric layer prepared by the HDPCVD process is a high-density gate dielectric layer
  • the second gate dielectric layer prepared by the PECVD process is a low-density gate dielectric layer, and thus can be obtained by different processes.
  • step S302 is: preparing a first gate dielectric layer having a thickness of 100 nm to 200 nm by a PECVD process on the upper surface of the GaN epitaxial layer;
  • Adjusting PECVD process parameters including combinations of one or more of RF power, silicon to nitrogen ratio, or gas flow pressure;
  • a second gate dielectric layer having a thickness of 50 nm to 100 nm is formed on the upper surface of the first gate dielectric layer by a PECVD process.
  • a gate dielectric layer of the same type of different density materials is prepared by adjusting one or more parameters of a PECVD process RF power, a silicon-nitrogen ratio, or a gas flow pressure parameter by the same PECVD process, using the same type
  • the preparation of the gate dielectric layer by the density material can reduce the process difficulty and improve the device yield.
  • the gate dielectric layer may be made of a material such as SiN or SiO 2 .
  • Step S303 performing isolation by using an ion implantation process on an area outside the surface active region of the second gate dielectric layer; wherein the active region includes a source electrode region, a drain electrode region, and a gate region.
  • the source electrode region, the drain electrode region, and the gate region are divided as an active region on the upper surface of the second gate dielectric layer, and doping isolation is performed by using an ion implantation process on a region other than the active region.
  • Step S304 forming a second gate trench penetrating the second gate dielectric layer in the gate region of the second gate dielectric layer, and forming a first through the first gate dielectric layer on the first gate dielectric layer a gate trench; wherein the first gate trench corresponds to a second gate trench location.
  • a first gate trench 108 is formed in the first gate dielectric layer 103 by a photolithography process and an etching process, and a second gate trench 109 is formed in the second gate dielectric layer 104.
  • the first gate trench 108 is
  • the second gate trench 109 corresponds to the position and forms a double recess gate trench, which can effectively reduce the parasitic capacitance of the GaN HEMT device and improve the frequency characteristics of the device.
  • step S304 is: covering a surface of the second gate dielectric layer with a first photoresist layer by a photolithography process, and obtaining, by exposure and development, the first photoresist layer a gate trench region corresponding to the gate region position; sequentially etching the second gate dielectric layer and the first gate dielectric layer by an inductively coupled plasma process to obtain a second gate trench penetrating through the second gate dielectric layer a first gate trench of a gate dielectric layer; wherein an etch rate ratio of the second gate dielectric layer etch rate to the first gate dielectric layer etch rate is greater than 2:1; the first photoresist layer is removed.
  • the first gate dielectric layer has an etch rate of 50 nm/min to 80 nm/min; and the second gate dielectric layer has an etch rate of 100 nm/min to 160 nm/min.
  • the first gate dielectric layer and the second gate dielectric layer and the photoresist etching selection ratio are greater than 3:1.
  • the first photoresist layer is covered on the upper surface of the second gate dielectric layer; then, the first photoresist layer is exposed and developed, and a gate trench to be etched is obtained in the first photoresist layer.
  • the second gate is formed by an Inductive Coupled Plasma (ICP) process using a fluorine-based gas with a photoresist etching selectivity ratio greater than 3:1 and an etching rate of 100 nm/min to 160 nm/min.
  • ICP Inductive Coupled Plasma
  • the dielectric layer is etched to obtain a second gate trench, and the first gate dielectric layer is etched to obtain a first gate trench by using a photoresist etching selectivity ratio greater than 3:1 and an etching rate of 50 nm/min to 80 nm/min.
  • the first gate trench and the second gate trench have a length of 0.15 ⁇ m to 0.5 ⁇ m; finally, the first photoresist layer is removed.
  • Step S305 forming a gate in the gate region by a vacuum evaporation process; wherein the gate includes a gate metal filling the first gate trench and the second gate trench, and the second gate dielectric layer The surface covers the gate cap of the second gate trench.
  • the gate metal is filled with the first gate trench 108 and the second gate trench 109 by a vacuum evaporation process to form a metal gate.
  • the gate metal is filled with the first gate trench and the second gate trench by a vacuum evaporation process to form a metal gate
  • the gate metal may be made of Au, TiPt or the like; then the region outside the gate metal is stripped to form a metal gate.
  • Step S306 forming a source electrode and a drain electrode on the source electrode region and the drain electrode region on both sides of the gate.
  • the source electrode 106 and the drain electrode 107 are formed on both sides of the gate electrode 105 by a photolithography process and an etching process.
  • step S306 is: covering a second photoresist layer on the upper surface of the second gate dielectric layer by a photolithography process, and using a etch process on the source electrode regions on both sides of the gate Forming a source electrode window and a drain electrode window; forming a source electrode and a drain electrode in the source electrode window and the drain electrode window by a vacuum evaporation process; stripping the metal other than the source and drain electrodes to remove the second photoresist Floor.
  • a surface of the second gate dielectric layer is covered with a second photoresist layer; then, the second photoresist layer is exposed and developed, and a source electrode that needs to be etched is obtained in the second photoresist layer.
  • a window region and a drain electrode window region secondly, etching the first gate dielectric layer and the second gate dielectric layer in the source electrode window region and the drain electrode window region by an etching process to obtain a source electrode window and a drain electrode window; Filling the full source electrode window and the drain electrode window by a vacuum evaporation process to form a source electrode and a drain electrode; finally, stripping the metal other than the source and drain electrodes to remove the second photoresist layer.
  • the etching rate of the gate dielectric layer and the etching selectivity ratio of the two different properties are adjusted by the etching process to obtain a double groove gate groove to avoid the fluctuation of the gate engraving process.
  • Parasitic parameters change, which reduces process difficulty and cost, improves process stability, effectively reduces gate parasitic capacitance, and improves device frequency characteristics.

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Abstract

本申请公开了一种GaNHEMT器件及制备方法，包括衬底，衬底上表面由下至上依次设有GaN外延层和栅介质层，还包括贯穿栅介质层与GaN外延层接触的栅极、源电极和漏电极；栅介质层包括不同性质的第一栅介质层和第二栅介质层；第一栅介质层上开设有第一栅槽，第二栅介质层上开设有第二栅槽，第一栅槽与第二栅槽位置对应；栅极包括填充满第一栅槽和第二栅槽的栅金属，以及设置于第二介质层上表面的栅帽；源电极和漏电极位于栅极两侧。本申请通过在两种不同性质的栅介质层对应位置上开设侧壁陡直的双凹槽结构栅槽，有效降低栅寄生电容，提高器件频率特性。

Description

一种GaN HEMT器件及制备方法
本申请申明享有2018年03月06日递交的申请号为2018101846561、名称为“一种GaN HEMT器件及制备方法”中国专利申请的优先权，该中国专利申请的整体内容以参考的方式结合在本申请中。
技术领域
本申请涉及半导体器件技术领域，特别是涉及一种GaN HEMT器件及制备方法。
 背景技术
目前，由于GaN HEMT（High Electron Mobility Transistor 高电子迁移率晶体管）器件具备优异的功率及频率特性，高击穿和低噪声特性，广泛应用于移动通信、雷达等领域。为提高GaN HEMT器件的频率特性，不仅需要缩短栅极的长度，还需要减小器件的寄生参数，例如：寄生电容、寄生电感、寄生电阻等。降低材料方阻、缩短源电极与漏电极间距是减小寄生电阻的主要方式。当源电极与漏电极间距减小时，栅极的套刻成为影响器件频率特性的关键，栅极套刻偏差和工艺波动将导致寄生参数变化，直接影响器件的频率特性。
 技术问题
有鉴于此，本申请实施例提供了一种GaN HEMT器件及制备方法，以解决GaN HEMT器件源电极和漏电极间距减小时，栅极套刻工艺波动导致寄生参数变化，从而影响器件频率特性的问题。
 技术解决方案
本申请实施例的第一方面提供了一种GaN HEMT器件，包括衬底，所述衬底的上表面由下至上依次设有GaN外延层和栅介质层，还包括栅极、源电极和漏电极；
所述栅极、源电极和漏电极贯穿所述栅介质层与所述GaN外延层接触；
所述栅介质层包括不同性质的第一栅介质层和第二栅介质层；
所述第一栅介质层上开设有贯穿所述第一栅介质层的第一栅槽，第二栅介质层上开设有贯穿所述第二栅介质层的第二栅槽；其中，所述第一栅槽与第二栅槽位置对应；
所述栅极包括填充满所述第一栅槽和第二栅槽的栅金属，以及设置于所述第二介质层上表面且覆盖所述第二栅槽的栅帽；
所述源电极和漏电极位于所述栅极两侧。
可选的，所述第一栅介质层厚度为100nm-200nm；所述第二栅介质层厚度为50nm-100nm。
可选的，所述栅极长度为0.15μm-0.5μm。
本申请实施例第二方面提供了一种GaN HEMT器件的制备方法，包括：
选取半导体材料作为衬底，在所述衬底上表面形成GaN外延层；
在所述GaN外延层上表面形成第一栅介质层，在所述第一栅介质层上表面形成第二栅介质层；
在所述第二栅介质层上表面有源区以外区域采用离子注入工艺进行隔离；其中，所述有源区包括源电极区、漏电极区和栅极区；
在所述第二栅介质层栅极区形成贯穿所述第二栅介质层的第二栅槽，在所述第一栅介质层上形成贯穿所述第一栅介质层的第一栅槽；其中，所述第一栅槽与第二栅槽位置对应；
通过真空蒸发工艺在所述栅极区形成栅极；其中，所述栅极包括填充满所述第一栅槽和第二栅槽的栅金属，和在所述第二栅介质层上表面覆盖所述第二栅槽的栅帽；
在所述栅极两侧的源电极区和漏电极区形成源电极和漏电极。
可选的，在所述GaN外延层上表面形成第一栅介质层，在所述第一栅介质层上表面形成第二栅介质层，包括：
在所述GaN外延层上表面通过高密度等离子体化学气相沉积工艺制备厚度为100nm-200nm的第一栅介质层；
在所述第一栅介质层上表面通过等离子体增强化学气相沉积工艺制备厚度为50nm-100nm的第二栅介质层。
可选的，在所述GaN外延层上表面形成第一栅介质层，在所述第一栅介质层上表面形成第二栅介质层，包括：
在所述GaN外延层上表面通过等离子体增强化学气相沉积工艺制备厚度为100nm-200nm的第一栅介质层；
调整等离子体增强化学气相沉积工艺参数，包括射频功率、硅氮比或气流量压力中的一个或多个参数的组合；
在所述第一栅介质层上表面通过等离子体增强化学气相沉积工艺制备厚度为50nm-100nm的第二栅介质层。
可选的，在所述第二栅介质层栅极区形成贯穿所述第二栅介质层的第二栅槽，在所述第一栅介质层上形成贯穿所述第一栅介质层的第一栅槽，包括：
通过光刻工艺在所述第二栅介质层上表面覆盖第一光刻胶层，并通过曝光、显影在所述第一光刻胶层得到与所述栅极区位置对应的栅槽区域；
通过电感耦合等离子体工艺依次刻蚀所述第二栅介质层和第一栅介质层，得到贯穿第二栅介质层的第二栅槽和贯穿第一栅介质层的第一栅槽；其中，第二栅介质层刻蚀速率与第一栅介质层刻蚀速率的刻蚀速率比大于2:1；
去除所述第一光刻胶层。
可选的，所述第一栅介质层刻蚀速率为50nm/min-80nm/min；所述第二栅介质层刻蚀速率为100nm/min-160nm/min。
可选的，所述第一栅介质层和第二栅介质层与光刻胶刻蚀选择比大于3:1。
可选的，在所述栅极两侧的源电极区和漏电极区形成源电极和漏电极，包括：
通过光刻工艺在所述第二栅介质层上表面覆盖第二光刻胶层，并通过刻蚀工艺在所述栅极两侧的源电极区和漏电极区形成源电极窗口和漏电极窗口；
通过真空蒸发工艺在所述源电极窗口和漏电极窗口形成源电极和漏电极；
剥离源漏电极以外的金属，去除所述第二光刻胶层。
 有益效果
（1）本申请实施例的一种GaN HEMT器件，通过在两种不同性质的栅介质层对应位置上开设的双凹槽结构栅槽，有效降低栅寄生电容，提高器件频率特性；（2）本申请实施例的制备方法操作简单，通过调节刻蚀工艺对两种不同性质的栅介质层刻蚀速率比和光刻胶刻蚀选择比，获得双凹槽结构栅槽，避免栅极套刻工艺波动导致的寄生参数变化，从而降低工艺难度和成本，提高工艺稳定性。
 附图说明
图1是本申请实施例一提供的GaN HEMT器件的结构剖视图；
图2是本申请实施例二提供的GaN HEMT器件的制备方法的流程结构剖视图；
图3是本申请实施例二提供的GaN HEMT器件制备方法的实现流程示意图图；
图中：101、衬底，102、GaN外延层，103、第一栅介质层，104、第二栅介质层，105、栅极，106、源电极，107、漏电极，108、第一栅槽，109、第二栅槽。
本申请的实施方式
为了说明本申请所述的技术方案，下面通过具体实施例来进行说明。
本实施例中的GaN HEMT器件，包括衬底，所述衬底的上表面由下至上依次设有GaN外延层和栅介质层，还包括栅极、源电极和漏电极；所述栅极、源电极和漏电极贯穿所述栅介质层与所述GaN外延层接触；所述栅介质层包括不同性质的第一栅介质层和第二栅介质层；所述第一栅介质层上开设有贯穿所述第一栅介质层的第一栅槽，第二栅介质层上开设有贯穿所述第二栅介质层的第二栅槽；其中，所述第一栅槽与第二栅槽位置对应；所述栅极包括填充满所述第一栅槽和第二栅槽的栅金属，以及设置于所述第二介质层上表面且覆盖所述第二栅槽的栅帽；所述源电极和漏电极位于所述栅极两侧。
可选的，所述第一栅介质层厚度为100nm-200nm；所述第二栅介质层厚度为50nm-100nm。
可选的，所述栅极长度为0.15μm-0.5μm。
具体地，请参阅图1，本实施例中的GaN HEMT器件包括衬底101，衬底101可以是SiC、Si等半导体材料。在衬底101的上表面依次设有GaN外延层102，厚度为100nm-200nm的第一栅介质层103，厚度为50nm-100nm的第二栅介质层104。第一栅介质层103与第二栅介质层104采用不同性质的材料，可以为同类型不同致密度的材料，例如，不同致密度的SiN、SiO 2等材料。第一栅介质层103上开设有贯穿第一栅介质层103的第一栅槽108，第二栅介质层104上开设有贯穿第二栅介质层104的第二栅槽109，第一栅槽108与第二栅槽109连通，并且第一栅槽108与第二栅槽109位置对应，且为以中心位置成对称结构的栅槽，从而形成双凹槽栅槽。栅极105包括填充满第一栅槽108和第二栅槽109的栅金属和设置于第二介质层104上表面且覆盖第二栅槽的栅帽。栅极105为长度0.15μm-0.5μm，栅极105贯穿栅介质层与GaN外延层102形成肖特基接触，用于控制HEMT器件沟道电流。位于栅极105两侧的源电极106和漏电极107贯穿栅介质层与GaN外延层102形成欧姆接触。其中，位置对应是指第一栅槽108与第二栅槽109在GaN外延层102的上表面的正投影的形状一致，且第一栅槽108与第二栅槽109的中心重合，第一栅槽108对应的投影区域包含在第二栅槽109对应的投影区域中。
本申请实施例的一种GaN HEMT器件，通过在两种不同性质的栅介质层对应位置上开设双凹槽结构栅槽，有效降低栅寄生电容，提高器件频率特性。
请参阅图2（1），图2为GaN HEMT器件的制备方法的流程结构剖视图。GaN HEMT器件包括衬底101、GaN外延层102、第一栅介质层103和第二栅介质层104。
请参阅图3，本实施例公开一种GaN HEMT器件制备方法，详述如下：
步骤S301，选取半导体材料作为衬底，在所述衬底上表面生长GaN外延层。
可选的，衬底可以采用SiC、Si等。
步骤S302，在所述GaN外延层上表面形成第一栅介质层，在所述第一栅介质层上表面形成第二栅介质层。
可选的，步骤S302的具体实现方法为：在所述GaN外延层上表面通过高密度等离子体化学气相沉积（High Density Plasma Chemical Vapor Deposition，HDPCVD）工艺制备厚度为100nm-200nm的第一栅介质层；
在所述第一栅介质层上表面通过等离子体增强化学气相沉积（Plasma Enhanced Chemical Vapor Deposition, PECVD）工艺制备厚度为50nm-100nm的第二栅介质层。
具体地，通过HDPCVD工艺制备的第一栅介质层为高致密度的栅介质层，而通过PECVD工艺制备的第二栅介质层为低致密度的栅介质层，因此，可以通过不同的工艺获得同种类型不同致密度材料的栅介质层。
可选的，步骤S302的具体实现方法为：在所述GaN外延层上表面通过PECVD工艺制备厚度为100nm-200nm的第一栅介质层；
调整PECVD工艺参数，包括射频功率、硅氮比或气流量压力中的一个或多个参数的组合；
在所述第一栅介质层上表面通过PECVD工艺制备厚度为50nm-100nm的第二栅介质层。
具体地，通过相同的PECVD工艺，调整PECVD工艺射频功率、硅氮比或气流量压力参数中的一个或多个参数组合制备同种类型不同致密度材料的栅介质层，采用同种类型不同致密度材料制备栅介质层能够降低工艺难度，提高器件成品率。
可选的，栅介质层可以采用SiN、SiO 2等材料。
步骤S303，在所述第二栅介质层上表面有源区以外区域采用离子注入工艺进行隔离；其中，所述有源区包括源电极区、漏电极区和栅极区。
具体地，在第二栅介质层上表面划分源电极区、漏电极区和栅极区作为有源区，并对有源区以外的区域采用离子注入工艺进行掺杂隔离。
步骤S304，在所述第二栅介质层栅极区形成贯穿所述第二栅介质层的第二栅槽，在所述第一栅介质层上形成贯穿所述第一栅介质层的第一栅槽；其中，所述第一栅槽与第二栅槽位置对应。
请参阅图2（2），通过光刻工艺和刻蚀工艺在第一栅介质层103开设第一栅槽108，在第二栅介质层104开设第二栅槽109，第一栅槽108与第二栅槽109位置对应，并形成双凹槽栅槽，能够有效的降低GaN HEMT器件寄生电容，提高器件频率特性。
可选的，步骤S304的具体实现方法为：通过光刻工艺在所述第二栅介质层上表面覆盖第一光刻胶层，并通过曝光、显影在所述第一光刻胶层得到与所述栅极区位置对应的栅槽区域；通过电感耦合等离子体工艺依次刻蚀所述第二栅介质层和第一栅介质层，得到贯穿第二栅介质层的第二栅槽和贯穿第一栅介质层的第一栅槽；其中，第二栅介质层刻蚀速率与第一栅介质层刻蚀速率的刻蚀速率比大于2:1；去除所述第一光刻胶层。
可选的，所述第一栅介质层刻蚀速率为50nm/min-80nm/min；所述第二栅介质层刻蚀速率为100nm/min-160nm/min。
可选的，所述第一栅介质层和第二栅介质层与光刻胶刻蚀选择比大于3:1。
具体地，首先，在第二栅介质层上表面覆盖第一光刻胶层；然后，对第一光刻胶层进行曝光、显影，在第一光刻胶层得到需要进行刻蚀的栅槽区域；其次，通过电感耦合等离子体（Inductive Coupled Plasma，ICP）工艺，采用氟基气体以光刻胶刻蚀选择比大于3:1、刻蚀速率为100nm/min-160nm/min对第二栅介质层进行刻蚀得到第二栅槽，以光刻胶刻蚀选择比大于3:1、刻蚀速率为50nm/min-80nm/min对第一栅介质层进行刻蚀得到第一栅槽，第一栅槽和第二栅槽的长度为0.15μm-0.5μm；最后，去除第一光刻胶层。
步骤S305，通过真空蒸发工艺在所述栅极区形成栅极；其中，所述栅极包括填充满所述第一栅槽和第二栅槽的栅金属，和在所述第二栅介质层表面覆盖所述第二栅槽的栅帽。
请参阅图2（3），通过真空蒸发工艺将栅金属填充满第一栅槽108和第二栅槽109形成金属栅。
具体地，通过真空蒸发工艺将栅金属填充满第一栅槽和第二栅槽，形成金属栅，栅金属可以采用Au、TiPt等材料；然后剥离栅金属以外区域形成金属栅。
步骤S306，在所述栅极两侧的源电极区和漏电极区形成源电极和漏电极。
请参阅图2（4），通过光刻工艺和刻蚀工艺在栅极105两侧的形成源电极106和漏电极107。
可选的，步骤S306的具体实现方法为：通过光刻工艺在所述第二栅介质层上表面覆盖第二光刻胶层，并通过刻蚀工艺在所述栅极两侧的源电极区和漏电极区形成源电极窗口和漏电极窗口；通过真空蒸发工艺在所述源电极窗口和漏电极窗口形成源电极和漏电极；剥离源漏电极以外的金属，去除所述第二光刻胶层。
具体地，首先，在第二栅介质层上表面覆盖第二光刻胶层；然后，对第二光刻胶层进行曝光、显影，在第二光刻胶层得到需要进行刻蚀的源电极窗口区域和漏电极窗口区域；其次，通过刻蚀工艺在源电极窗口区域和漏电极窗口区域对第一栅介质层和第二栅介质层进行刻蚀，得到源电极窗口和漏电极窗口；再次，通过真空蒸发工艺填充满源电极窗口和漏电极窗口，形成源电极和漏电极；最后，剥离源漏电极以外的金属，去除第二光刻胶层。
本实施例的制备方法，通过调节刻蚀工艺对两种不同性质的栅介质层刻蚀速率比和光刻胶刻蚀选择比，获得双凹槽栅槽，避免栅极套刻工艺波动导致的寄生参数变化，从而降低工艺难度和成本，提高工艺稳定性，有效降低栅寄生电容，提高器件频率特性。
应理解，上述实施例中各步骤的序号的大小并不意味着执行顺序的先后，各过程的执行顺序应以其功能和内在逻辑确定，而不应对本申请实施例的实施过程构成任何限定。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述或记载的部分，可以参见其它实施例的相关描述。
前述是对示例实施例的举例说明，并且不应被解释为对示例实施例的限制。虽然已经描述了一些示例实施例，但是本领域的技术人员将容易理解的是，在实质上不脱离本公开的新颖性教导和优点的情况下，示例实施例中的许多修改是可以的。因此，所有这些修改都意图被包括在如权利要求所限定的本公开的范围之内。因此，将理解的是，前述是对各种示例实施例的举例说明，而不应被解释为受限于所公开的特定的示例实施例，并且对所公开的示例实施例及其他示例实施例的修改意图包括在权利要求的范围之内。

Claims (10)

  1. 一种GaNHEMT器件，其特征在于，包括衬底，所述衬底的上表面由下至上依次设有GaN外延层和栅介质层，还包括栅极、源电极和漏电极；
    所述栅极、源电极和漏电极贯穿所述栅介质层与所述GaN外延层接触；
    所述栅介质层包括不同性质的第一栅介质层和第二栅介质层；
    所述第一栅介质层上开设有贯穿所述第一栅介质层的第一栅槽，第二栅介质层上开设有贯穿所述第二栅介质层的第二栅槽；其中，所述第一栅槽与第二栅槽位置对应；
    所述栅极包括填充满所述第一栅槽和第二栅槽的栅金属，以及设置于所述第二介质层上表面且覆盖所述第二栅槽的栅帽；
    所述源电极和漏电极位于所述栅极两侧。
  2. 根据权利要求1所述的GaN HEMT器件，其特征在于，所述第一栅介质层厚度为100nm-200nm；所述第二栅介质层厚度为50nm-100nm。
  3. 根据权利要求1或2所述的GaN HEMT器件，其特征在于，所述栅极长度为0.15μm-0.5μm。
  4. 一种GaN HEMT器件的制备方法，其特征在于，包括步骤：
    选取半导体材料作为衬底，在所述衬底上表面形成GaN外延层；
    在所述GaN外延层上表面形成第一栅介质层，在所述第一栅介质层上表面形成第二栅介质层；
    在所述第二栅介质层上表面有源区以外区域采用离子注入工艺进行隔离；其中，所述有源区包括源电极区、漏电极区和栅极区；
    在所述第二栅介质层栅极区形成贯穿所述第二栅介质层的第二栅槽，在所述第一栅介质层上形成贯穿所述第一栅介质层的第一栅槽；其中，所述第一栅槽与第二栅槽位置对应；
    通过真空蒸发工艺在所述栅极区形成栅极；其中，所述栅极包括填充满所述第一栅槽和第二栅槽的栅金属，和在所述第二栅介质层上表面覆盖所述第二栅槽的栅帽；
    在所述栅极两侧的源电极区和漏电极区形成源电极和漏电极。
  5. 根据权利要求4所述的GaN HEMT器件制备方法，其特征在于，在所述GaN外延层上表面形成第一栅介质层，在所述第一栅介质层上表面形成第二栅介质层，包括：
    在所述GaN外延层上表面通过高密度等离子体化学气相沉积工艺制备厚度为100nm-200nm的第一栅介质层；
    在所述第一栅介质层上表面通过等离子体增强化学气相沉积工艺制备厚度为50nm-100nm的第二栅介质层。
  6. 根据权利要求4所述的GaN HEMT器件制备方法，其特征在于，在所述GaN外延层上表面形成第一栅介质层，在所述第一栅介质层上表面形成第二栅介质层，包括：
    在所述GaN外延层上表面通过等离子体增强化学气相沉积工艺制备厚度为100nm-200nm的第一栅介质层；
    调整等离子体增强化学气相沉积工艺参数，包括射频功率、硅氮比或气流量压力中的一个或多个参数的组合；
    在所述第一栅介质层上表面通过等离子体增强化学气相沉积工艺制备厚度为50nm-100nm的第二栅介质层。
  7. 根据权利要求4所述的GaN HEMT器件制备方法，其特征在于，在所述第二栅介质层栅极区形成贯穿所述第二栅介质层的第二栅槽，在所述第一栅介质层上形成贯穿所述第一栅介质层的第一栅槽，包括：
    通过光刻工艺在所述第二栅介质层上表面覆盖第一光刻胶层，并通过曝光、显影在所述第一光刻胶层得到与所述栅极区位置对应的栅槽区域；
    通过电感耦合等离子体刻蚀工艺依次刻蚀所述第二栅介质层和第一栅介质层，得到贯穿第二栅介质层的第二栅槽和贯穿第一栅介质层的第一栅槽；其中，第二栅介质层刻蚀速率与第一栅介质层刻蚀速率的刻蚀速率比大于2:1；
    去除所述第一光刻胶层。
  8. 根据权利要求7所述的GaN HEMT器件制备方法，其特征在于，所述第一栅介质层刻蚀速率为50nm/min-80nm/min；所述第二栅介质层刻蚀速率为100nm/min-160nm/min。
  9. 根据权利要求7所述的GaN HEMT器件制备方法，其特征在于，所述第一栅介质层和第二栅介质层与光刻胶刻蚀选择比大于3:1。
  10. 根据权利要求4至9任一项所述的GaN HEMT器件制备方法，其特征在于，在所述栅极两侧的源电极区和漏电极区形成源电极和漏电极，包括：
    通过光刻工艺在所述第二栅介质层上表面覆盖第二光刻胶层，并通过刻蚀工艺在所述栅极两侧的源电极区和漏电极区形成源电极窗口和漏电极窗口；
    通过真空蒸发工艺在所述源电极窗口和漏电极窗口形成源电极和漏电极；
    剥离源漏电极以外的金属，去除所述第二光刻胶层。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112768409A (zh) * 2020-12-31 2021-05-07 深圳市汇芯通信技术有限公司 GaN HEMT集成器件及其制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108389904B (zh) * 2018-03-06 2020-09-01 中国电子科技集团公司第十三研究所 一种GaN HEMT器件及制备方法
CN109841677A (zh) 2019-03-28 2019-06-04 英诺赛科（珠海）科技有限公司 高电子迁移率晶体管及其制造方法
CN111312816B (zh) * 2020-03-03 2023-02-28 厦门市三安集成电路有限公司 半导体器件及其制作方法
CN111863960A (zh) * 2020-07-24 2020-10-30 北京大学东莞光电研究院 基于高K材料的品型栅AlGaN/GaN高电子迁移率晶体管及制作方法
WO2023205936A1 (zh) * 2022-04-24 2023-11-02 华为技术有限公司 半导体器件及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271128B1 (en) * 2000-09-29 2001-08-07 Vanguard International Semiconductor Corp. Method for fabricating transistor
US20150311084A1 (en) * 2014-04-23 2015-10-29 Freescale Semiconductor, Inc. Method for Improving E-Beam Lithography Gate Metal Profile for Enhanced Field Control
CN105118774A (zh) * 2015-07-22 2015-12-02 中国电子科技集团公司第十三研究所 纳米t型栅的制作方法
CN108389904A (zh) * 2018-03-06 2018-08-10 中国电子科技集团公司第十三研究所 一种GaN HEMT器件及制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101465372A (zh) * 2009-01-08 2009-06-24 西安电子科技大学 AlN/GaN增强型金属-绝缘体-半导体场效应晶体管及其制作方法
CN102637726A (zh) * 2012-04-29 2012-08-15 西安电子科技大学 MS栅GaN基增强型高电子迁移率晶体管及制作方法
CN103887335B (zh) * 2014-02-25 2017-02-22 中国电子科技集团公司第五十五研究所 一种提升频率特性的赝配高电子迁移率晶体管的制作方法
US9911817B2 (en) * 2015-07-17 2018-03-06 Cambridge Electronics, Inc. Field-plate structures for semiconductor devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271128B1 (en) * 2000-09-29 2001-08-07 Vanguard International Semiconductor Corp. Method for fabricating transistor
US20150311084A1 (en) * 2014-04-23 2015-10-29 Freescale Semiconductor, Inc. Method for Improving E-Beam Lithography Gate Metal Profile for Enhanced Field Control
CN105118774A (zh) * 2015-07-22 2015-12-02 中国电子科技集团公司第十三研究所 纳米t型栅的制作方法
CN108389904A (zh) * 2018-03-06 2018-08-10 中国电子科技集团公司第十三研究所 一种GaN HEMT器件及制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112768409A (zh) * 2020-12-31 2021-05-07 深圳市汇芯通信技术有限公司 GaN HEMT集成器件及其制备方法

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