CN103545364A - 自对准接触孔的小尺寸mosfet结构及制作方法 - Google Patents
自对准接触孔的小尺寸mosfet结构及制作方法 Download PDFInfo
- Publication number
- CN103545364A CN103545364A CN201210239999.6A CN201210239999A CN103545364A CN 103545364 A CN103545364 A CN 103545364A CN 201210239999 A CN201210239999 A CN 201210239999A CN 103545364 A CN103545364 A CN 103545364A
- Authority
- CN
- China
- Prior art keywords
- etching
- silicon
- contact hole
- layer
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 title abstract description 4
- 230000005669 field effect Effects 0.000 title abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 3
- 150000004706 metal oxides Chemical class 0.000 title abstract description 3
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000005530 etching Methods 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 15
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 230000003647 oxidation Effects 0.000 claims abstract description 3
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 8
- 238000000407 epitaxy Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 230000001413 cellular effect Effects 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210239999.6A CN103545364B (zh) | 2012-07-11 | 2012-07-11 | 自对准接触孔的小尺寸mosfet结构及制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210239999.6A CN103545364B (zh) | 2012-07-11 | 2012-07-11 | 自对准接触孔的小尺寸mosfet结构及制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103545364A true CN103545364A (zh) | 2014-01-29 |
CN103545364B CN103545364B (zh) | 2016-04-13 |
Family
ID=49968638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210239999.6A Active CN103545364B (zh) | 2012-07-11 | 2012-07-11 | 自对准接触孔的小尺寸mosfet结构及制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103545364B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105551965A (zh) * | 2016-01-15 | 2016-05-04 | 上海华虹宏力半导体制造有限公司 | 沟槽栅功率mosfet及其制造方法 |
CN106024636A (zh) * | 2016-07-12 | 2016-10-12 | 杭州士兰集成电路有限公司 | 槽栅功率器件及制作方法 |
CN107527944A (zh) * | 2017-07-28 | 2017-12-29 | 上海华虹宏力半导体制造有限公司 | 沟槽栅功率mosfet及其制造方法 |
CN108140670A (zh) * | 2015-10-19 | 2018-06-08 | 维西埃-硅化物公司 | 具有采用间隙壁的自对准体接触的沟槽mosfet |
CN109817625A (zh) * | 2019-01-22 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | 一种字线多晶硅阻挡氧化层及其制造方法 |
CN110085569A (zh) * | 2018-01-25 | 2019-08-02 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
CN113013086A (zh) * | 2020-06-03 | 2021-06-22 | 上海积塔半导体有限公司 | 深沟道隔离结构及其制作方法 |
CN113284954A (zh) * | 2021-07-22 | 2021-08-20 | 成都蓉矽半导体有限公司 | 一种高沟道密度的碳化硅mosfet及其制备方法 |
CN113299599A (zh) * | 2021-04-07 | 2021-08-24 | 上海芯导电子科技股份有限公司 | 一种自对准的场效应晶体管及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101019235A (zh) * | 2004-09-03 | 2007-08-15 | 皇家飞利浦电子股份有限公司 | 垂直半导体器件和制造该器件的方法 |
CN101606240A (zh) * | 2007-03-15 | 2009-12-16 | 英特尔公司 | 具有双外延沟道和自对准接点的cmos器件 |
CN201663162U (zh) * | 2010-04-29 | 2010-12-01 | 苏州硅能半导体科技股份有限公司 | 单胞中集成肖特基二极管的沟槽mos器件 |
US20110278666A1 (en) * | 2010-05-13 | 2011-11-17 | Wei Liu | Trench MOSFET with integrated Schottky diode in a single cell and method of manufacture |
-
2012
- 2012-07-11 CN CN201210239999.6A patent/CN103545364B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101019235A (zh) * | 2004-09-03 | 2007-08-15 | 皇家飞利浦电子股份有限公司 | 垂直半导体器件和制造该器件的方法 |
CN101606240A (zh) * | 2007-03-15 | 2009-12-16 | 英特尔公司 | 具有双外延沟道和自对准接点的cmos器件 |
CN201663162U (zh) * | 2010-04-29 | 2010-12-01 | 苏州硅能半导体科技股份有限公司 | 单胞中集成肖特基二极管的沟槽mos器件 |
US20110278666A1 (en) * | 2010-05-13 | 2011-11-17 | Wei Liu | Trench MOSFET with integrated Schottky diode in a single cell and method of manufacture |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108140670A (zh) * | 2015-10-19 | 2018-06-08 | 维西埃-硅化物公司 | 具有采用间隙壁的自对准体接触的沟槽mosfet |
US10930591B2 (en) | 2015-10-19 | 2021-02-23 | Vishay-Siliconix, LLC | Trench MOSFET with self-aligned body contact with spacer |
US10903163B2 (en) | 2015-10-19 | 2021-01-26 | Vishay-Siliconix, LLC | Trench MOSFET with self-aligned body contact with spacer |
CN105551965A (zh) * | 2016-01-15 | 2016-05-04 | 上海华虹宏力半导体制造有限公司 | 沟槽栅功率mosfet及其制造方法 |
CN105551965B (zh) * | 2016-01-15 | 2018-06-19 | 上海华虹宏力半导体制造有限公司 | 沟槽栅功率mosfet及其制造方法 |
CN106024636A (zh) * | 2016-07-12 | 2016-10-12 | 杭州士兰集成电路有限公司 | 槽栅功率器件及制作方法 |
CN106024636B (zh) * | 2016-07-12 | 2023-08-04 | 杭州士兰集成电路有限公司 | 槽栅功率器件及制作方法 |
CN107527944B (zh) * | 2017-07-28 | 2020-04-14 | 上海华虹宏力半导体制造有限公司 | 沟槽栅功率mosfet及其制造方法 |
US10529567B2 (en) | 2017-07-28 | 2020-01-07 | Shanghai Huahong Grace Semiconductor Manufacturing Corporation | Trench gate power MOSFET and manufacturing method thereof |
CN107527944A (zh) * | 2017-07-28 | 2017-12-29 | 上海华虹宏力半导体制造有限公司 | 沟槽栅功率mosfet及其制造方法 |
CN110085569B (zh) * | 2018-01-25 | 2020-12-22 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
CN110085569A (zh) * | 2018-01-25 | 2019-08-02 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
CN109817625A (zh) * | 2019-01-22 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | 一种字线多晶硅阻挡氧化层及其制造方法 |
CN113013086A (zh) * | 2020-06-03 | 2021-06-22 | 上海积塔半导体有限公司 | 深沟道隔离结构及其制作方法 |
CN113013086B (zh) * | 2020-06-03 | 2024-02-02 | 上海积塔半导体有限公司 | 深沟道隔离结构及其制作方法 |
CN113299599A (zh) * | 2021-04-07 | 2021-08-24 | 上海芯导电子科技股份有限公司 | 一种自对准的场效应晶体管及其制备方法 |
CN113284954A (zh) * | 2021-07-22 | 2021-08-20 | 成都蓉矽半导体有限公司 | 一种高沟道密度的碳化硅mosfet及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103545364B (zh) | 2016-04-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103545364B (zh) | 自对准接触孔的小尺寸mosfet结构及制作方法 | |
CN101814523B (zh) | 半导体装置及其制造方法 | |
US7842574B2 (en) | Method of manufacturing a semiconductor power device | |
US6537885B1 (en) | Transistor and method of manufacturing a transistor having a shallow junction formation using a two step EPI layer | |
JP5519902B2 (ja) | リセスチャネルを有するトランジスタ及びその製造方法 | |
KR101430820B1 (ko) | 이중 게이트 횡형 mosfet | |
CN107978635B (zh) | 一种半导体器件及其制造方法和电子装置 | |
TWI705503B (zh) | 半導體結構和半導體製造方法 | |
CN103270599A (zh) | 具有高浓度硼掺杂锗的晶体管 | |
US9614050B2 (en) | Method for manufacturing semiconductor devices | |
CN103996680A (zh) | 高电压晶体管结构及其方法 | |
US20110057259A1 (en) | Method for forming a thick bottom oxide (tbo) in a trench mosfet | |
CN101777499B (zh) | 一种基于平面工艺自对准制备隧穿场效应晶体管的方法 | |
US9806190B2 (en) | High voltage drain extension on thin buried oxide SOI | |
CN103035712A (zh) | 半导体器件及其制造方法 | |
US20160149027A1 (en) | Asymmetrical finfet structure and method of manufacturing same | |
CN110364483A (zh) | 半导体结构及其形成方法 | |
US9178038B2 (en) | Raised source/drain MOS transistor and method of forming the transistor with an implant spacer and an epitaxial spacer | |
US6784491B2 (en) | MOS devices with reduced fringing capacitance | |
US20110117712A1 (en) | Semiconductor device with high k dielectric control terminal spacer structure | |
CN103579317A (zh) | 栅极结构及制造方法 | |
CN104332406A (zh) | 半导体器件及其制造方法 | |
CN113035715A (zh) | 屏蔽栅沟槽场效应晶体管及其制备方法 | |
CN104218080A (zh) | 射频ldmos器件及其制造方法 | |
US20230420558A1 (en) | Semiconductor device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140117 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140117 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |