WO2019150995A1 - Thermosetting resin composition, film-form adhesive, adhesive sheet, and method for producing semiconductor device - Google Patents
Thermosetting resin composition, film-form adhesive, adhesive sheet, and method for producing semiconductor device Download PDFInfo
- Publication number
- WO2019150995A1 WO2019150995A1 PCT/JP2019/001538 JP2019001538W WO2019150995A1 WO 2019150995 A1 WO2019150995 A1 WO 2019150995A1 JP 2019001538 W JP2019001538 W JP 2019001538W WO 2019150995 A1 WO2019150995 A1 WO 2019150995A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- adhesive
- resin composition
- thermosetting resin
- component
- Prior art date
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- 229920001187 thermosetting polymer Polymers 0.000 title claims abstract description 48
- 239000011342 resin composition Substances 0.000 title claims abstract description 46
- 239000000853 adhesive Substances 0.000 title claims description 140
- 230000001070 adhesive effect Effects 0.000 title claims description 140
- 239000004065 semiconductor Substances 0.000 title claims description 121
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 36
- 229920001971 elastomer Polymers 0.000 claims abstract description 35
- 239000000806 elastomer Substances 0.000 claims abstract description 35
- 239000003822 epoxy resin Substances 0.000 claims abstract description 34
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 34
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 28
- 125000000524 functional group Chemical group 0.000 claims abstract description 14
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 27
- 229920000178 Acrylic resin Polymers 0.000 claims description 20
- 239000004925 Acrylic resin Substances 0.000 claims description 20
- 239000005011 phenolic resin Substances 0.000 claims description 15
- 238000010030 laminating Methods 0.000 claims description 10
- 239000011256 inorganic filler Substances 0.000 claims description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 238000002788 crimping Methods 0.000 claims 1
- 238000011156 evaluation Methods 0.000 description 16
- 239000002966 varnish Substances 0.000 description 15
- 238000011282 treatment Methods 0.000 description 13
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 10
- -1 ester compound Chemical class 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229920000800 acrylic rubber Polymers 0.000 description 9
- 229920000058 polyacrylate Polymers 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 5
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 229910002026 crystalline silica Inorganic materials 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical group C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000000378 calcium silicate Substances 0.000 description 2
- 229910052918 calcium silicate Inorganic materials 0.000 description 2
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000391 magnesium silicate Substances 0.000 description 2
- 229910052919 magnesium silicate Inorganic materials 0.000 description 2
- 235000019792 magnesium silicate Nutrition 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 2
- 150000004780 naphthols Chemical class 0.000 description 2
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000012756 surface treatment agent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- MODAACUAXYPNJH-UHFFFAOYSA-N 1-(methoxymethyl)-4-[4-(methoxymethyl)phenyl]benzene Chemical group C1=CC(COC)=CC=C1C1=CC=C(COC)C=C1 MODAACUAXYPNJH-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- BLBVJHVRECUXKP-UHFFFAOYSA-N 2,3-dimethoxy-1,4-dimethylbenzene Chemical group COC1=C(C)C=CC(C)=C1OC BLBVJHVRECUXKP-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- 150000004651 carbonic acid esters Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 150000002085 enols Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Images
Classifications
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C09J11/08—Macromolecular additives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/92—Specific sequence of method steps
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- H01L2224/9222—Sequential connecting processes
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Definitions
- the present invention relates to a thermosetting resin composition, a film adhesive, an adhesive sheet, and a method for manufacturing a semiconductor device.
- silver paste is mainly used for joining a semiconductor chip and a support member for mounting the semiconductor chip.
- the supporting members used are also required to be miniaturized and densified.
- problems such as occurrence of defects during wire bonding due to protrusion of the paste or inclination of the semiconductor chip, difficulty in controlling the film thickness, and generation of voids may occur.
- a film adhesive for joining a semiconductor chip and a support member has been used (see, for example, Patent Document 1).
- an adhesive sheet comprising a dicing tape and a film adhesive laminated on the dicing tape
- the film adhesive is attached to the back surface of the semiconductor wafer, and the semiconductor wafer is separated into pieces by dicing.
- a semiconductor chip with an adhesive can be obtained.
- the obtained semiconductor chip with a film adhesive can be attached to a support member via a film adhesive and bonded by thermocompression bonding.
- the film-like adhesive is used as FOW (Film Over Wire) which is a wire-embedded film-like adhesive or FOD (Film Over Die) which is a semiconductor chip-embedded film-like adhesive
- FOW Flexible Over Wire
- FOD Fin Off Die
- high fluidity is required at the time of thermocompression bonding. Therefore, the frequency and amount of bleed tend to increase further. In some cases, the bleed may occur even on the upper surface of the semiconductor chip, which may lead to electrical failure or wire bonding failure.
- the present invention has been made in view of such circumstances, and is a thermosetting resin capable of suppressing an increase in the amount of bleed during high-temperature pressure treatment while having good embedding properties during thermocompression bonding.
- the main purpose is to provide a composition.
- One aspect of the present invention is an epoxy resin, a curing agent, a first elastomer having a weight average molecular weight of 200,000 to 1,300,000 and having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group, A second elastomer having a weight average molecular weight of 200,000 to 1,300,000 and having no carboxy group and no hydroxyl group, and the total content of the first elastomer and the second elastomer is a thermosetting resin
- a thermosetting resin composition that is 40% by mass or less based on the total amount of the composition is provided. According to such a thermosetting resin composition, it is possible to suppress an increase in the amount of bleed during high-temperature pressure treatment while having good embedding properties during thermocompression bonding.
- the curing agent may contain a phenol resin.
- the first elastomer may be an acrylic resin having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group.
- the second elastomer may be an acrylic resin having no carboxy group and no hydroxyl group.
- the epoxy resin may contain an epoxy resin that is liquid at 25 ° C.
- thermosetting resin composition may further contain an inorganic filler. Moreover, the thermosetting resin composition may further contain a curing accelerator.
- thermosetting resin composition is a semiconductor in which a first semiconductor element is wire-bonded to a substrate via a first wire, and a second semiconductor element is pressure-bonded on the first semiconductor element.
- the second semiconductor element may be crimped and used to embed at least a part of the first wire.
- the present invention further includes an epoxy resin, a curing agent, a first elastomer having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group, and a second elastomer having no carboxy group and a hydroxyl group,
- the thermosetting resin composition containing the first semiconductor element is wire bonded to the substrate via the first wire, and the second semiconductor element is pressure-bonded on the first semiconductor element.
- the second semiconductor element may be crimped and at least a part of the first wire may be embedded and applied as an adhesive or an adhesive manufacturing.
- the present invention provides a film adhesive formed by forming the above-mentioned thermosetting resin composition into a film.
- the present invention provides an adhesive sheet comprising a base material and the above-described film adhesive provided on the base material.
- the substrate may be a dicing tape.
- an adhesive sheet whose base material is a dicing tape may be referred to as a “dicing die bonding integrated adhesive sheet”.
- the adhesive sheet may further include a protective film laminated on the surface opposite to the base of the film adhesive.
- the present invention provides a wire bonding step of electrically connecting a first semiconductor element via a first wire on a substrate, and the above-described film shape on one side of the second semiconductor element.
- a wire bonding step of electrically connecting a first semiconductor element via a first wire on a substrate, and the above-described film shape on one side of the second semiconductor element.
- the first semiconductor chip is wire bonded to the semiconductor substrate via the first wire, and the second semiconductor chip is pressure-bonded to the first semiconductor chip via the adhesive film.
- the first semiconductor chip may be a wire embedded type semiconductor device in which at least a part of the first wire is embedded in the adhesive film, and the first wire and the first semiconductor chip are embedded in the adhesive film. It may be a chip embedded semiconductor device.
- thermosetting resin composition capable of suppressing an increase in the amount of bleed during high-temperature pressure treatment while having good embedding properties during thermocompression bonding. Therefore, the film-like adhesive formed by forming the thermosetting resin composition into a film is FOD (Film Over Die) which is a semiconductor chip-embedded film-like adhesive or FOW which is a wire-embedded film-like adhesive. (Film Over Wire) may be useful. Moreover, according to this invention, the manufacturing method of the adhesive sheet using such a film adhesive and a semiconductor device is provided.
- FIG. 1 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of
- (meth) acrylic acid means acrylic acid or methacrylic acid corresponding thereto.
- thermosetting resin composition is a first resin having at least one functional group selected from the group consisting of (A) an epoxy resin, (B) a curing agent, and (C) a carboxy group and a hydroxyl group. And (D) a second elastomer having no carboxy group and no hydroxyl group.
- the thermosetting resin composition can be in a completely cured product (C stage) state after the curing process through a semi-cured (B stage) state.
- the component (A) can be used without particular limitation as long as it has an epoxy group in the molecule.
- the component (A) for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type Epoxy resin, dicyclopentadiene skeleton-containing epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenolmethane-type epoxy resin, biphenyl-type epoxy resin, xylylene-type epoxy resin, phenylaralkyl-type epoxy Diglycidies of polycyclic aromatics such as resins, biphenyl aralkyl type epoxy resins, naphthalene type epoxy resins, polyfunctional phenols and anthracene And ether compounds.
- the component (A) preferably has a 150 ° C. melt viscosity of 1.0 Pa ⁇ s or less from the viewpoint of fluidity.
- the epoxy resin may contain the epoxy resin which is liquid at 25 degreeC.
- the epoxy equivalent of the component (A) is not particularly limited, but may be 90 to 300 g / eq, 110 to 290 g / eq, or 110 to 290 g / eq. When the epoxy equivalent of the component (A) is in such a range, the fluidity tends to be secured while maintaining the bulk strength of the film adhesive.
- Examples of commercially available components (A) include HP-7200 series manufactured by DIC Corporation, YDCN series manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., NC-3000 series and NC-7000 series manufactured by Nippon Kayaku Co., Ltd., and the like. It is done.
- (B) There is no restriction
- a component a phenol resin, an ester compound, an aromatic amine, an aliphatic amine, an acid anhydride etc. are mentioned, for example. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of reactivity and stability over time, the component (B) may contain a phenol resin.
- the phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
- examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol, and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol, dihydroxynaphthalene, and formaldehyde.
- a novolak-type phenol resin obtained by condensation or co-condensation with a compound having an aldehyde group in the presence of an acidic catalyst phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolak, phenol, and / or Or phenol aralkyl resins, naphthol aralkyl resins, biphenyl aralkyl type resins synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl Examples thereof include an enol resin and a phenylaralkyl type phenol resin.
- the phenol resin has a water absorption of 2% by mass or less in a constant temperature and humidity chamber of 85 ° C. and 85% RH for 48 hours, and a thermogravimetric analyzer (TGA). It is preferable that the heating mass decrease rate (heating rate: 5 ° C./min, atmosphere: nitrogen) at 350 ° C. measured in step 1 is less than 5% by mass.
- phenol resins examples include Phenolite KA series, TD series (manufactured by DIC Corporation), Millex XLC series, XL series (manufactured by Mitsui Chemicals), and HE series (manufactured by Air Water Corporation). Can be mentioned.
- the hydroxyl equivalent of the phenol resin is not particularly limited, but may be 80 to 250 g / eq, 90 to 200 g / eq, or 100 to 180 g / eq.
- the adhesive strength tends to be maintained higher while maintaining the fluidity of the film adhesive.
- the ratio of the epoxy equivalent of component (A) to the hydroxyl equivalent of component (B) is 0.30 / 0.70 to 0.70 from the viewpoint of curability. /0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / It may be 0.45.
- the equivalent ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained.
- the equivalent ratio is 0.70 / 0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.
- the total content of the component (A) and the component (B) may be 10 to 80% by mass based on the total amount of the thermosetting resin composition.
- the total content of the component (A) and the component (B) may be 20% by mass or more, 25% by mass or more, or 30% by mass or more, and is 70% by mass or less, 60% by mass or less, or 50% by mass. % Or less.
- the total content of the component (A) and the component (B) is 10% by mass or more based on the total amount of the thermosetting resin composition, sufficient adhesive force tends to be obtained.
- the viscosity can be prevented from becoming too low, and the amount of bleed can be reduced. There is a tendency to be able to suppress more.
- Component (C) is an elastomer having a weight average molecular weight of 200,000 to 1,300,000 and having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group.
- the component (C) may be an elastomer having a carboxy group.
- the crosslinking reaction proceeds during thermocompression bonding, the thermosetting resin composition thickens, and the increase in the amount of bleed during high-temperature pressure treatment is suppressed. Can be possible.
- the component (C) preferably has a glass transition temperature (Tg) of the polymer constituting the elastomer of 50 ° C. or lower.
- the component (C) is not particularly limited as long as it has at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group.
- an acrylic resin, a polyester resin, a polyamide resin, a polyimide resin, a silicone resin examples thereof include butadiene resins, acrylonitrile resins, and modified products thereof having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group.
- the component (C) may be an acrylic resin having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group from the viewpoint of solubility in a solvent and fluidity.
- the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester.
- the acrylic resin is preferably a polymer including a structural unit derived from a (meth) acrylic acid ester having an alcoholic or phenolic hydroxyl group or a carboxy group as a structural unit.
- the acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile.
- the glass transition temperature (Tg) of the component (C) may be ⁇ 50 to 50 ° C. or ⁇ 30 to 30 ° C. If the Tg of the acrylic resin is ⁇ 50 ° C. or higher, the thermosetting resin composition tends to be prevented from becoming too flexible. Thereby, it becomes easy to cut
- the glass transition temperature (Tg) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).
- the weight average molecular weight (Mw) of the component (C) is 200,000 to 1.3 million.
- the Mw of the component (C) may be 300,000 or more, 400,000 or more, or 450,000 or more, or 1.1 million or less, 1 million or less, or 950,000 or less.
- Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
- the acid value of the component (C) having a carboxy group may be 1 to 60 mgKOH / g, 3 to 50 mgKOH / g, or 5 to 40 mgKOH / g from the viewpoint of curability.
- the acid value is in such a range, gelation in the varnish and a decrease in fluidity in the B stage state tend to be prevented.
- the hydroxyl value of the component (C) having a hydroxyl group may be 1 to 60 mgKOH / g, 3 to 50 mgKOH / g, or 5 to 40 mgKOH / g from the viewpoint of curability.
- the hydroxyl value is in such a range, gelation in the varnish and a decrease in fluidity in the B stage state tend to be prevented.
- Examples of the commercially available component (C) include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23 (all manufactured by Nagase ChemteX Corporation).
- Component (D) is an elastomer having a weight average molecular weight of 200,000 to 1.3 million and having no carboxy group and no hydroxyl group.
- the component (D) may be an elastomer having a functional group other than a carboxy group and a hydroxyl group (for example, a glycidyl group).
- Tg glass transition temperature
- the component (D) is not particularly limited as long as it does not have a carboxy group and a hydroxyl group, and examples thereof include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, acrylonitrile resins, and modified products thereof. And what does not have a carboxy group and a hydroxyl group is mentioned.
- the component (D) may be an acrylic resin having no carboxy group and no hydroxyl group from the viewpoint of solubility in a solvent and fluidity.
- the acrylic resin has the same meaning as described above.
- the acrylic resin is preferably a polymer containing a functional monomer (such as (meth) acrylic acid ester) having an epoxy group such as a glycidyl group as a structural unit.
- the acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile.
- the glass transition temperature (Tg) of the component (D) may be ⁇ 50 to 50 ° C. or ⁇ 30 to 30 ° C. If the Tg of the acrylic resin is ⁇ 50 ° C. or higher, the thermosetting resin composition tends to be prevented from becoming too flexible. Thereby, it becomes easy to cut
- the glass transition temperature (Tg) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).
- the weight average molecular weight (Mw) of the component (D) is 200,000 to 1.3 million.
- Mw of component may be 300,000 or more, 400,000 or more, 500,000 or more, or 600,000 or more, 1.2 million or less, 1.1 million or less, 1 million or less, 950,000 or less, or 900,000 or less It may be.
- Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
- Examples of the commercially available component (D) include SG-P3, SG-80H, and HTR-860P-3CSP (all manufactured by Nagase ChemteX Corporation).
- the total content of the component (C) and the component (D) is 40% by mass or less based on the total amount of the thermosetting resin composition.
- the total content of the component (C) and the component (D) may be 35% by mass or less, 30% by mass or less, or 28% by mass or less.
- embedding tends to be more excellent. 1 mass% or more, 5 mass% or more, 10 mass% or more, or 15 mass% or more may be sufficient as content of (C) component and (D) component.
- Mass ratio of component (C) to the total amount of component (C) and component (D) in the thermosetting resin composition May be between 0.01 and 0.50.
- the mass ratio may be 0.02 or more, 0.03 or more, or 0.05 or more, and may be 0.30 or less, 0.20 or less, or 0.10 or less.
- the mass ratio of the component (C) to the component (C) and the component (D) is 0.01 or more, the increase in the amount of bleed during the high-temperature pressure treatment tends to be further suppressed.
- the mass ratio of the component (C) to the component (C) and the component (D) is 0.50 or less, better embedding property tends to be maintained.
- thermosetting resin composition according to the present embodiment may further contain (E) an inorganic filler.
- the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystal Examples thereof include crystalline silica and amorphous silica. These may be used individually by 1 type and may be used in combination of 2 or more type.
- the inorganic filler may contain aluminum oxide, aluminum nitride, boron nitride, crystalline silica, or amorphous silica. Further, from the viewpoint of adjusting the melt viscosity of the thermosetting resin composition and from the viewpoint of imparting thixotropic properties to the thermosetting resin composition, the inorganic filler is aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, Calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystalline silica or amorphous silica may be included.
- the average particle diameter of the component (E) may be 0.005 to 0.5 ⁇ m or 0.05 to 0.3 ⁇ m from the viewpoint of further improving the adhesiveness.
- an average particle diameter means the value calculated
- the component may be surface-treated with a surface treatment agent from the viewpoint of compatibility between the surface and the solvent, other components, and the like, and adhesive strength.
- a surface treatment agent include a silane coupling agent.
- the functional group of the silane coupling agent include a vinyl group, a (meth) acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, and an ethoxy group.
- the content of the component (E) is 10 to 90 parts by mass or 10 to 50 parts by mass with respect to 100 parts by mass of the total amount of the components (A), (B), (C), and (D). It may be. Adhesion before hardening that content of (E) component is 10 mass parts or more with respect to 100 mass parts of total amounts of (A) component, (B) component, (C) component, and (D) component The dicing property of the layer is improved, and the adhesive force of the adhesive layer after curing tends to be improved. When the content of the component (E) is 90 parts by mass or less with respect to 100 parts by mass of the total amount of the components (A), (B), (C), and (D), the fluidity is lowered. And the elastic modulus of the cured film adhesive can be prevented from becoming too high.
- thermosetting resin composition according to this embodiment may further contain (F) a curing accelerator.
- a hardening accelerator is not specifically limited, What is generally used can be used.
- the component (F) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of reactivity, the component (F) may be imidazoles and derivatives thereof.
- imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, and the like. You may use these individually by 1 type or in combination of 2 or more types.
- the content of the component (F) is 0.04 to 3 parts by mass or 0.04 to 0.04 to 100 parts by mass of the total amount of the components (A), (B), (C), and (D). It may be 0.2 parts by mass.
- content of (F) component exists in such a range, it exists in the tendency which can make sclerosis
- thermosetting resin composition according to the present embodiment may further contain an antioxidant, a silane coupling agent, a rheology control agent, and the like as other components.
- the content of these components may be 0.02 to 3 parts by mass with respect to 100 parts by mass as the total of components (A), (B), (C), and (D).
- the adhesive composition according to this embodiment may be used as an adhesive varnish diluted with a solvent.
- the solvent is not particularly limited as long as it can dissolve components other than the component (E).
- the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-dioxane and the like.
- Cyclic ether such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; ester such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, ⁇ -butyrolactone; Examples thereof include carbonic acid esters such as ethylene carbonate and propylene carbonate; amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone. You may use these individually by 1 type or in combination of 2 or more types.
- the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexane from the viewpoints of solubility and boiling point.
- the solid component concentration in the adhesive varnish may be 10 to 80% by mass based on the total mass of the adhesive varnish.
- Adhesive varnish mixes (A) component, (B) component, (C) component, (D) component and solvent, and (E) component, (F) component, and other components as necessary It can be prepared by kneading. Mixing and kneading can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a triple roll, a ball mill, and a bead mill.
- the mixing time can be reduced by mixing the component (E) and the low molecular weight component in advance and then blending the high molecular weight component.
- bubbles in the varnish may be removed by vacuum degassing or the like.
- FIG. 1 is a schematic cross-sectional view showing a film adhesive according to an embodiment.
- the film adhesive 10 is formed by forming the above-described adhesive composition into a film.
- the film adhesive 10 may be in a semi-cured (B stage) state.
- Such a film adhesive 10 can be formed by applying an adhesive composition to a support film.
- the film adhesive 10 can be formed by applying the adhesive varnish to a support film and removing the solvent by heating and drying.
- the support film is not particularly limited, and examples thereof include films of polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, polyimide, and the like.
- the thickness of the support film may be, for example, 60 to 200 ⁇ m or 70 to 170 ⁇ m.
- a known method can be used, for example, knife coating method, roll coating method, spray coating method, gravure coating method, bar coating method, curtain coating method, etc. It is done.
- the conditions for the heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, but may be, for example, 50 to 200 ° C. for 0.1 to 90 minutes.
- the thickness of the film adhesive can be appropriately adjusted according to the application.
- the thickness of the film adhesive may be 20 to 200 ⁇ m, 30 to 200 ⁇ m, or 40 to 150 ⁇ m from the viewpoint of sufficiently embedding irregularities such as a semiconductor chip, a wire, and a wiring circuit of a substrate.
- FIG. 2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment.
- the adhesive sheet 100 includes a base material 20 and the above-described film adhesive 10 provided on the base material.
- the substrate 20 is not particularly limited, but may be a substrate film.
- the base film may be the same as the above support film.
- the base material 20 may be a dicing tape.
- Such an adhesive sheet can be used as a dicing die bonding integrated adhesive sheet. In this case, since the lamination process to the semiconductor wafer is performed once, the work efficiency can be improved.
- the dicing tape examples include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film.
- the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as necessary.
- the dicing tape is preferably one having adhesiveness.
- Such a dicing tape may be one obtained by imparting adhesiveness to the above-mentioned plastic film, or may be one obtained by providing an adhesive layer on one side of the above-mentioned plastic film.
- the adhesive sheet 100 can be formed by applying an adhesive composition to a base film in the same manner as the above-described method for forming a film adhesive.
- the method for applying the adhesive composition to the substrate 20 may be the same as the method for applying the adhesive composition to the support film.
- the adhesive sheet 100 may be formed using a film adhesive prepared in advance.
- the adhesive sheet 100 can be formed by laminating under a predetermined condition (for example, room temperature (20 ° C.) or a heated state) using a roll laminator, a vacuum laminator, or the like. Since the adhesive sheet 100 can be continuously manufactured and has high efficiency, it is preferably formed using a roll laminator in a heated state.
- the thickness of the film adhesive 10 may be 20 to 200 ⁇ m, 30 to 200 ⁇ m, or 40 to 150 ⁇ m from the viewpoint of embedding properties such as unevenness of a semiconductor chip, a wire, a wiring circuit of a substrate, and the like.
- the thickness of the film adhesive 10 is 20 ⁇ m or more, a sufficient adhesive force tends to be obtained, and when the thickness of the film adhesive 10 is 200 ⁇ m or less, it is economical and the semiconductor device It is possible to meet the demand for downsizing.
- FIG. 3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment.
- the adhesive sheet 110 further includes a protective film 30 laminated on the surface of the film adhesive 10 opposite to the base 20.
- the protective film 30 may be the same as the above support film.
- the thickness of the protective film may be, for example, 15 to 200 ⁇ m or 70 to 170 ⁇ m.
- FIG. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment.
- the first semiconductor element Wa in the first stage is wire-bonded to the substrate 14 via the first wire 88, and the second semiconductor element Waa is formed on the first semiconductor element Wa.
- the semiconductor device is a semiconductor device in which at least a part of the first wire 88 is embedded in the film adhesive 10 by being pressure-bonded via the film adhesive 10.
- the semiconductor device is a semiconductor device in which the first wire 88 and the first semiconductor element Wa are embedded even if the semiconductor device is a wire embedded type semiconductor device in which at least a part of the first wire 88 is embedded. May be.
- the substrate 14 and the second semiconductor element Waa are further electrically connected via the second wire 98, and the second semiconductor element Waa is sealed with the sealing material 42. ing.
- the thickness of the first semiconductor element Wa may be 10 to 170 ⁇ m, and the thickness of the second semiconductor element Waa may be 20 to 400 ⁇ m.
- the first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200.
- the substrate 14 is composed of an organic substrate 90 having two circuit patterns 84 and 94 formed on the surface thereof.
- the first semiconductor element Wa is pressure-bonded onto the circuit pattern 94 via an adhesive 41.
- the second semiconductor element Waa is interposed via the film adhesive 10 so that the circuit pattern 94, the first semiconductor element Wa, and the circuit pattern 84 to which the first semiconductor element Wa is not bonded are covered. Crimped to the substrate 14.
- a film adhesive 10 is embedded in the uneven steps due to the circuit patterns 84 and 94 on the substrate 14.
- the second semiconductor element Waa, the circuit pattern 84, and the second wire 98 are sealed with a resin sealing material 42.
- a die-bonding step embedded in the adhesive is
- the semiconductor device 200 is a semiconductor device in which a first wire 88 and a first semiconductor element Wa are embedded, and is manufactured by the following procedure.
- the first semiconductor element Wa having the adhesive 41 is crimped onto the circuit pattern 94 on the substrate 14, and the circuit pattern 84 on the substrate 14 and the first pattern are connected to each other via the first wire 88.
- the first semiconductor element Wa is electrically bonded and connected (first wire bonding step).
- the adhesive sheet 100 is laminated on one side of a semiconductor wafer (for example, thickness 100 ⁇ m, size: 8 inches), and the base material 20 is peeled off, whereby the film-like adhesive 10 (for example, thickness) is applied to one side of the semiconductor wafer. 110 ⁇ m). Then, after the dicing tape is bonded to the film adhesive 10, the dicing tape is diced to a predetermined size (for example, 7.5 mm square), whereby the second film adhesive 10 is applied as shown in FIG. The semiconductor element Waa is obtained (laminating step).
- the temperature condition of the laminating process may be 50-100 ° C or 60-80 ° C.
- the temperature in the laminating step is 50 ° C. or higher, good adhesion to the semiconductor wafer can be obtained.
- the temperature of the laminating process is 100 ° C. or lower, the film-like adhesive 10 can be prevented from flowing excessively during the laminating process, so that it is possible to prevent a change in thickness and the like.
- Examples of the dicing method include blade dicing using a rotary blade, and a method of cutting a film adhesive or both a wafer and a film adhesive with a laser.
- the second semiconductor element Waa to which the film adhesive 10 is attached is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is bonded via the first wire 88.
- the first wire 88 and the first semiconductor element Wa are covered with the second semiconductor element Waa to which the film-like adhesive 10 is attached by the film-like adhesive 10.
- the second semiconductor element Waa is fixed to the substrate 14 by pressing the second semiconductor element Waa to the substrate 14 (die bonding step).
- the film adhesive 10 is preferably pressure-bonded for 0.5 to 3.0 seconds under conditions of 80 to 180 ° C. and 0.01 to 0.50 MPa.
- the film adhesive 10 is pressed and heated for 5 minutes or more under the conditions of 60 to 175 ° C. and 0.3 to 0.7 MPa.
- the circuit pattern 84, the second wire 98 and the second semiconductor element Waa are sealed with a sealing material 42.
- the semiconductor device 200 can be manufactured through such steps.
- the semiconductor device may be a wire embedded type semiconductor device in which at least a part of the first wire 88 is embedded.
- Examples 1 to 7 and Comparative Examples 1 to 3 ⁇ Preparation of adhesive sheet>
- a varnish of a thermosetting resin composition having a solid content of 40% by mass was prepared using cyclohexanone as a solvent.
- the obtained varnish was filtered through a 100-mesh filter and vacuum degassed.
- the varnish after vacuum defoaming was applied as a base film onto a polyethylene terephthalate (PET) film that had been subjected to a release treatment with a thickness of 38 ⁇ m.
- PET polyethylene terephthalate
- the applied varnish was heat-dried in two stages of 90 ° C. for 5 minutes, followed by 140 ° C. for 5 minutes.
- an adhesive sheet provided with a film adhesive having a thickness of 110 ⁇ m in a semi-cured (B stage) state was obtained on the base film.
- each component in Table 1 is as follows.
- Epoxy resin A-1 Dicyclopentadiene skeleton-containing epoxy resin, manufactured by DIC Corporation, trade name: HP-7200L, epoxy equivalent: 242 to 252 g / eq
- A-2 Cresol novolac type epoxy resin, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent: 209 g / eq
- A-3 Bisphenol F type epoxy resin (liquid at 25 ° C.), manufactured by DIC Corporation, trade name: EXA-830CRP, epoxy equivalent: 159 g / eq
- Curing agent B-1 Biphenyl aralkyl type phenol resin, manufactured by Air Water Co., Ltd., trade name: HE-200C-10, hydroxyl group equivalent: 205 g / eq
- B-2 Phenylaralkyl type phenol resin, manufactured by Air Water Co., Ltd., trade name: HE100C-30, hydroxyl group equivalent: 175 g
- C-2 Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: SG-708-6, weight average molecular weight: 700,000, acid value: 9 mgKOH / g, Tg: 4 ° C.
- C-3 Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: SG-280 EK23, weight average molecular weight: 900,000, acid value: 30 mgKOH / g, Tg: -29 ° C
- D-1 Second elastomer (an elastomer having no carboxy group and no hydroxyl group)
- D-1 Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: HTR-860P-3CSP, weight average molecular weight: 800,000, glycidyl group-containing monomer ratio: 3%, Tg: ⁇ 7 ° C.
- D-2 Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: HTR-860P-30B-CHN, weight average molecular weight: 230,000, glycidyl group-containing monomer ratio: 8%, Tg: ⁇ 7 ° C.
- D-3 Acrylic rubber, manufactured by Nagase ChemteX Corporation, improved HTR-860P-3CSP (trade name: HTR-860P-3CSP, an acrylic rubber manufactured by Nagase ChemteX Corporation, a structural unit derived from acrylonitrile) Excluded), weight average molecular weight: 600,000, Tg: 12 ° C.
- E Inorganic filler E-1: Silica filler dispersion, fused silica, manufactured by Admatechs Co., Ltd., trade name: SC2050-HLG, average particle size: 0.50 ⁇ m
- F Curing accelerator
- F-1 1-cyanoethyl-2-phenylimidazole, manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name: Curesol 2PZ-CN
- the film adhesive of the semiconductor chip A and the semiconductor wafer of the semiconductor chip B were pressure-bonded under the conditions of 120 ° C., 0.20 MPa, and 1.5 seconds to obtain an evaluation sample.
- alignment was performed so that the semiconductor chip B that was previously crimped was in the center of the semiconductor chip A.
- the evaluation sample thus obtained was observed for the presence or absence of observation of voids with an ultrasonic digital diagnostic imaging apparatus (Insight Inc., probe: 75 MHz), and when voids were observed, The ratio of the void area was calculated, and these analysis results were evaluated as embeddability.
- the evaluation criteria are as follows. The results are shown in Table 1. A: No void was observed. B: Although voids were observed, the ratio was less than 5 area%. C: A void was observed, and the ratio was 5 area% or more.
- the bleed amount evaluation was carried out only for the evaluation of “A” or “B” in the embeddability evaluation.
- An evaluation sample was produced in the same procedure as the evaluation sample produced by the above embeddability evaluation.
- the film adhesive of the semiconductor chip A and the semiconductor wafer of the semiconductor chip B were pressure-bonded under the conditions of 120 ° C., 0.20 MPa, and 1.5 seconds.
- high-temperature pressure treatment pressure cure
- the evaluation sample is observed with a microscope before and after the pressure cure. From the center of the four sides, the bleed amount (the amount of protrusion) of the film adhesive was measured.
- thermosetting resin composition according to the present invention can suppress an increase in the amount of bleed during high-temperature pressure treatment while having good embedding property during thermocompression bonding. It was done.
- thermosetting resin composition according to the present invention has a good embedding property at the time of thermocompression bonding, and can suppress an increase in the amount of bleed at the time of high-temperature pressure treatment.
- a film-like adhesive formed by forming a product into a film can be useful as a chip-embedded film-like adhesive FOD (Film Over Die) or a wire-embedded film-like adhesive FOW (Film Over Wire) .
- SYMBOLS 10 Film adhesive, 14 ... Substrate, 20 ... Base material, 30 ... Protective film, 41 ... Adhesive, 42 ... Sealing material, 84, 94 ... Circuit pattern, 88 ... First wire, 90 ... Organic substrate 98, second wire, 100, 110, adhesive sheet, 200, semiconductor device, Wa, first semiconductor element, Waa, second semiconductor element.
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Abstract
Disclosed is a thermosetting resin composition comprising: an epoxy resin; a hardening agent; a first elastomer having a weight-average molecular weight of 200,000 to 1,300,000, and having at least one type of functional group selected from the group consisting of a carboxy group and a hydroxy group; and a second elastomer having a weight-average molecular weight of 200,000 to 1,300,000 and having neither a carboxy group or a hydroxy group. The total content of the first elastomer and the second elastomer is less than 40% by mass with respect to the total quantity of the thermosetting resin composition.
Description
本発明は、熱硬化性樹脂組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法に関する。
The present invention relates to a thermosetting resin composition, a film adhesive, an adhesive sheet, and a method for manufacturing a semiconductor device.
従来、半導体チップと半導体チップ搭載用の支持部材との接合には、主に銀ペーストが使用されている。しかし、近年の半導体チップの小型化・集積化に伴い、使用される支持部材にも小型化、細密化が要求されるようになっている。その一方で、銀ペーストを用いる場合では、ペーストのはみ出し又は半導体チップの傾きに起因するワイヤボンディング時における不具合の発生、膜厚制御の困難性、ボイド発生等の問題が生じる場合がある。
Conventionally, silver paste is mainly used for joining a semiconductor chip and a support member for mounting the semiconductor chip. However, with the recent miniaturization and integration of semiconductor chips, the supporting members used are also required to be miniaturized and densified. On the other hand, when a silver paste is used, problems such as occurrence of defects during wire bonding due to protrusion of the paste or inclination of the semiconductor chip, difficulty in controlling the film thickness, and generation of voids may occur.
そのため、近年、半導体チップと支持部材とを接合するためのフィルム状接着剤が使用されている(例えば、特許文献1参照)。ダイシングテープとダイシングテープ上に積層されたフィルム状接着剤とを備える接着シートを用いる場合、半導体ウェハの裏面にフィルム状接着剤を貼り付け、ダイシングによって半導体ウェハを個片化することによって、フィルム状接着剤付き半導体チップを得ることができる。得られたフィルム状接着剤付き半導体チップは、フィルム状接着剤を介して支持部材に貼り付け、熱圧着により接合することができる。
Therefore, in recent years, a film adhesive for joining a semiconductor chip and a support member has been used (see, for example, Patent Document 1). When using an adhesive sheet comprising a dicing tape and a film adhesive laminated on the dicing tape, the film adhesive is attached to the back surface of the semiconductor wafer, and the semiconductor wafer is separated into pieces by dicing. A semiconductor chip with an adhesive can be obtained. The obtained semiconductor chip with a film adhesive can be attached to a support member via a film adhesive and bonded by thermocompression bonding.
しかしながら、半導体チップのサイズが小さくなるにつれて、加圧時に単位面積当たりにかかる力が大きくなるため、高温加圧処理(例えば、加圧キュア等)において、フィルム状接着剤が半導体チップからはみ出す、ブリードという現象が発生する場合がある。
However, as the size of the semiconductor chip is reduced, the force per unit area during pressurization increases, so that the film-like adhesive protrudes from the semiconductor chip in high-temperature pressurization processing (for example, pressure curing). May occur.
また、フィルム状接着剤をワイヤ埋め込み型フィルム状接着剤であるFOW(Film Over Wire)又は半導体チップ埋め込み型フィルム状接着剤であるFOD(Film Over Die)として用いる場合は、埋め込み性を向上させる観点から、熱圧着時に高い流動性が求められる。そのため、ブリードの発生頻度及び量がさらに増大する傾向にある。場合によっては、ブリードが半導体チップ上面にまで生じることがあり、これによって、電気不良又はワイヤボンディング不良につながるおそれがある。
In addition, when the film-like adhesive is used as FOW (Film Over Wire) which is a wire-embedded film-like adhesive or FOD (Film Over Die) which is a semiconductor chip-embedded film-like adhesive, a viewpoint of improving embedding property Therefore, high fluidity is required at the time of thermocompression bonding. Therefore, the frequency and amount of bleed tend to increase further. In some cases, the bleed may occur even on the upper surface of the semiconductor chip, which may lead to electrical failure or wire bonding failure.
本発明は、このような実情に鑑みてなされたものであり、熱圧着時に良好な埋め込み性を有しつつ、高温加圧処理時のブリード量の増加を抑制することが可能な熱硬化性樹脂組成物を提供することを主な目的とする。
The present invention has been made in view of such circumstances, and is a thermosetting resin capable of suppressing an increase in the amount of bleed during high-temperature pressure treatment while having good embedding properties during thermocompression bonding. The main purpose is to provide a composition.
本発明の一側面は、エポキシ樹脂と、硬化剤と、重量平均分子量が20万~130万であり、カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有する第1のエラストマと、重量平均分子量が20万~130万であり、カルボキシ基及び水酸基を有しない第2のエラストマと、を含有し、第1のエラストマ及び第2のエラストマの合計の含有量が、熱硬化性樹脂組成物全量を基準として、40質量%以下である、熱硬化性樹脂組成物を提供する。このような熱硬化性樹脂組成物によれば、熱圧着時に良好な埋め込み性を有しつつ、高温加圧処理時のブリード量の増加を抑制することが可能となる。
One aspect of the present invention is an epoxy resin, a curing agent, a first elastomer having a weight average molecular weight of 200,000 to 1,300,000 and having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group, A second elastomer having a weight average molecular weight of 200,000 to 1,300,000 and having no carboxy group and no hydroxyl group, and the total content of the first elastomer and the second elastomer is a thermosetting resin A thermosetting resin composition that is 40% by mass or less based on the total amount of the composition is provided. According to such a thermosetting resin composition, it is possible to suppress an increase in the amount of bleed during high-temperature pressure treatment while having good embedding properties during thermocompression bonding.
硬化剤はフェノール樹脂を含んでいてよい。
The curing agent may contain a phenol resin.
第1のエラストマはカルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有するアクリル樹脂であってよい。また、第2のエラストマはカルボキシ基及び水酸基を有しないアクリル樹脂であってよい。
The first elastomer may be an acrylic resin having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group. The second elastomer may be an acrylic resin having no carboxy group and no hydroxyl group.
エポキシ樹脂は25℃で液体のエポキシ樹脂を含んでいてよい。
The epoxy resin may contain an epoxy resin that is liquid at 25 ° C.
熱硬化性樹脂組成物は無機フィラーをさらに含有していてもよい。また、熱硬化性樹脂組成物は硬化促進剤をさらに含有していてもよい。
The thermosetting resin composition may further contain an inorganic filler. Moreover, the thermosetting resin composition may further contain a curing accelerator.
熱硬化性樹脂組成物は、基板上に第1のワイヤを介して第1の半導体素子がワイヤボンディング接続されると共に、第1の半導体素子上に、第2の半導体素子が圧着されてなる半導体装置において、第2の半導体素子を圧着すると共に第1のワイヤの少なくとも一部を埋め込むために用いられるものであってよい。
The thermosetting resin composition is a semiconductor in which a first semiconductor element is wire-bonded to a substrate via a first wire, and a second semiconductor element is pressure-bonded on the first semiconductor element. In the apparatus, the second semiconductor element may be crimped and used to embed at least a part of the first wire.
本発明はさらに、エポキシ樹脂と、硬化剤と、カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有する第1のエラストマと、カルボキシ基及び水酸基を有しない第2のエラストマと、を含有する熱硬化性樹脂組成物の、基板上に第1のワイヤを介して第1の半導体素子がワイヤボンディング接続されると共に、第1の半導体素子上に、第2の半導体素子が圧着されてなる半導体装置において、第2の半導体素子を圧着すると共に第1のワイヤの少なくとも一部を埋め込むために用いられる、接着剤としての応用又は接着剤の製造のための応用に関してもよい。
The present invention further includes an epoxy resin, a curing agent, a first elastomer having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group, and a second elastomer having no carboxy group and a hydroxyl group, The thermosetting resin composition containing the first semiconductor element is wire bonded to the substrate via the first wire, and the second semiconductor element is pressure-bonded on the first semiconductor element. In the semiconductor device as described above, the second semiconductor element may be crimped and at least a part of the first wire may be embedded and applied as an adhesive or an adhesive manufacturing.
別の側面において、本発明は、上述の熱硬化性樹脂組成物をフィルム状に形成してなるフィルム状接着剤を提供する。
In another aspect, the present invention provides a film adhesive formed by forming the above-mentioned thermosetting resin composition into a film.
別の側面において、本発明は、基材と基材上に設けられた上述のフィルム状接着剤とを備える接着シートを提供する。
In another aspect, the present invention provides an adhesive sheet comprising a base material and the above-described film adhesive provided on the base material.
基材は、ダイシングテープであってよい。なお、本明細書において、基材がダイシングテープである接着シートを「ダイシングダイボンディング一体型接着シート」という場合がある。
The substrate may be a dicing tape. In the present specification, an adhesive sheet whose base material is a dicing tape may be referred to as a “dicing die bonding integrated adhesive sheet”.
接着シートは、フィルム状接着剤の基材とは反対側の面に積層された保護フィルムをさらに備えてもよい。
The adhesive sheet may further include a protective film laminated on the surface opposite to the base of the film adhesive.
さらに、別の側面において、本発明は、基板上に第1のワイヤを介して第1の半導体素子を電気的に接続するワイヤボンディング工程と、第2の半導体素子の片面に、上述のフィルム状接着剤を貼付するラミネート工程と、フィルム状接着剤が貼付された第2の半導体素子を、フィルム状接着剤を介して圧着することで、第1のワイヤの少なくとも一部をフィルム状接着剤に埋め込むダイボンド工程と、を備える、半導体装置の製造方法を提供する。
Furthermore, in another aspect, the present invention provides a wire bonding step of electrically connecting a first semiconductor element via a first wire on a substrate, and the above-described film shape on one side of the second semiconductor element. By laminating the laminating step for applying the adhesive and the second semiconductor element to which the film adhesive is applied via the film adhesive, at least a part of the first wire is applied to the film adhesive. A method for manufacturing a semiconductor device is provided.
なお、半導体装置は、半導体基板上に第1のワイヤを介して第1の半導体チップがワイヤボンディング接続されると共に、第1の半導体チップ上に、第2の半導体チップが接着フィルムを介して圧着されることで、第1のワイヤの少なくとも一部が接着フィルムに埋め込まれてなるワイヤ埋込型の半導体装置であってもよく、第1のワイヤ及び第1の半導体チップが接着フィルムに埋め込まれてなるチップ埋込型の半導体装置であってもよい。
In the semiconductor device, the first semiconductor chip is wire bonded to the semiconductor substrate via the first wire, and the second semiconductor chip is pressure-bonded to the first semiconductor chip via the adhesive film. As a result, it may be a wire embedded type semiconductor device in which at least a part of the first wire is embedded in the adhesive film, and the first wire and the first semiconductor chip are embedded in the adhesive film. It may be a chip embedded semiconductor device.
本発明によれば、熱圧着時に良好な埋め込み性を有しつつ、高温加圧処理時のブリード量の増加を抑制することが可能な熱硬化性樹脂組成物が提供される。そのため、当該熱硬化性樹脂組成物をフィルム状に形成してなるフィルム状接着剤は、半導体チップ埋め込み型フィルム状接着剤であるFOD(Film Over Die)又はワイヤ埋め込み型フィルム状接着剤であるFOW(Film Over Wire)として有用となり得る。また、本発明によれば、このようなフィルム状接着剤を用いた接着シート及び半導体装置の製造方法が提供される。
According to the present invention, there is provided a thermosetting resin composition capable of suppressing an increase in the amount of bleed during high-temperature pressure treatment while having good embedding properties during thermocompression bonding. Therefore, the film-like adhesive formed by forming the thermosetting resin composition into a film is FOD (Film Over Die) which is a semiconductor chip-embedded film-like adhesive or FOW which is a wire-embedded film-like adhesive. (Film Over Wire) may be useful. Moreover, according to this invention, the manufacturing method of the adhesive sheet using such a film adhesive and a semiconductor device is provided.
以下、図面を適宜参照しながら、本発明の実施形態について説明する。ただし、本発明は以下の実施形態に限定されるものではない。
Hereinafter, embodiments of the present invention will be described with appropriate reference to the drawings. However, the present invention is not limited to the following embodiments.
本明細書において、(メタ)アクリル酸はアクリル酸又はそれに対応するメタクリル酸を意味する。(メタ)アクリロイル基等の他の類似表現についても同様である。
In the present specification, (meth) acrylic acid means acrylic acid or methacrylic acid corresponding thereto. The same applies to other similar expressions such as a (meth) acryloyl group.
[熱硬化性樹脂組成物]
本実施形態に係る熱硬化性樹脂組成物は、(A)エポキシ樹脂と、(B)硬化剤と、(C)カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有する第1のエラストマと、(D)カルボキシ基及び水酸基を有しない第2のエラストマと、を含有する。熱硬化性樹脂組成物は、半硬化(Bステージ)状態を経て、硬化処理後に完全硬化物(Cステージ)状態となり得る。 [Thermosetting resin composition]
The thermosetting resin composition according to this embodiment is a first resin having at least one functional group selected from the group consisting of (A) an epoxy resin, (B) a curing agent, and (C) a carboxy group and a hydroxyl group. And (D) a second elastomer having no carboxy group and no hydroxyl group. The thermosetting resin composition can be in a completely cured product (C stage) state after the curing process through a semi-cured (B stage) state.
本実施形態に係る熱硬化性樹脂組成物は、(A)エポキシ樹脂と、(B)硬化剤と、(C)カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有する第1のエラストマと、(D)カルボキシ基及び水酸基を有しない第2のエラストマと、を含有する。熱硬化性樹脂組成物は、半硬化(Bステージ)状態を経て、硬化処理後に完全硬化物(Cステージ)状態となり得る。 [Thermosetting resin composition]
The thermosetting resin composition according to this embodiment is a first resin having at least one functional group selected from the group consisting of (A) an epoxy resin, (B) a curing agent, and (C) a carboxy group and a hydroxyl group. And (D) a second elastomer having no carboxy group and no hydroxyl group. The thermosetting resin composition can be in a completely cured product (C stage) state after the curing process through a semi-cured (B stage) state.
<(A)成分:エポキシ樹脂>
(A)成分は、分子内にエポキシ基を有するものであれば、特に制限なく用いることができる。(A)成分としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールAノボラック型エポキシ樹脂、ビスフェノールFノボラック型エポキシ樹脂、ジシクロペンタジエン骨格含有エポキシ樹脂、スチルベン型エポキシ樹脂、トリアジン骨格含有エポキシ樹脂、フルオレン骨格含有エポキシ樹脂、トリフェノールフェノールメタン型エポキシ樹脂、ビフェニル型エポキシ樹脂、キシリレン型エポキシ樹脂、フェニルアラルキル型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、ナフタレン型エポキシ樹脂、多官能フェノール類、アントラセン等の多環芳香族類のジグリシジルエーテル化合物などが挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、(A)成分は、流動性の観点から、150℃溶融粘度が1.0Pa・s以下であるものが好ましい。また、(A)成分は、エポキシ樹脂が25℃で液体のエポキシ樹脂を含んでいてもよい。 <(A) component: epoxy resin>
The component (A) can be used without particular limitation as long as it has an epoxy group in the molecule. As the component (A), for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type Epoxy resin, dicyclopentadiene skeleton-containing epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenolmethane-type epoxy resin, biphenyl-type epoxy resin, xylylene-type epoxy resin, phenylaralkyl-type epoxy Diglycidies of polycyclic aromatics such as resins, biphenyl aralkyl type epoxy resins, naphthalene type epoxy resins, polyfunctional phenols and anthracene And ether compounds. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (A) preferably has a 150 ° C. melt viscosity of 1.0 Pa · s or less from the viewpoint of fluidity. Moreover, as for (A) component, the epoxy resin may contain the epoxy resin which is liquid at 25 degreeC.
(A)成分は、分子内にエポキシ基を有するものであれば、特に制限なく用いることができる。(A)成分としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールAノボラック型エポキシ樹脂、ビスフェノールFノボラック型エポキシ樹脂、ジシクロペンタジエン骨格含有エポキシ樹脂、スチルベン型エポキシ樹脂、トリアジン骨格含有エポキシ樹脂、フルオレン骨格含有エポキシ樹脂、トリフェノールフェノールメタン型エポキシ樹脂、ビフェニル型エポキシ樹脂、キシリレン型エポキシ樹脂、フェニルアラルキル型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、ナフタレン型エポキシ樹脂、多官能フェノール類、アントラセン等の多環芳香族類のジグリシジルエーテル化合物などが挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、(A)成分は、流動性の観点から、150℃溶融粘度が1.0Pa・s以下であるものが好ましい。また、(A)成分は、エポキシ樹脂が25℃で液体のエポキシ樹脂を含んでいてもよい。 <(A) component: epoxy resin>
The component (A) can be used without particular limitation as long as it has an epoxy group in the molecule. As the component (A), for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type Epoxy resin, dicyclopentadiene skeleton-containing epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenolmethane-type epoxy resin, biphenyl-type epoxy resin, xylylene-type epoxy resin, phenylaralkyl-type epoxy Diglycidies of polycyclic aromatics such as resins, biphenyl aralkyl type epoxy resins, naphthalene type epoxy resins, polyfunctional phenols and anthracene And ether compounds. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (A) preferably has a 150 ° C. melt viscosity of 1.0 Pa · s or less from the viewpoint of fluidity. Moreover, as for (A) component, the epoxy resin may contain the epoxy resin which is liquid at 25 degreeC.
(A)成分のエポキシ当量は、特に制限されないが、90~300g/eq、110~290g/eq、又は110~290g/eqであってよい。(A)成分のエポキシ当量がこのような範囲にあると、フィルム状接着剤のバルク強度を維持しつつ、流動性を確保することができる傾向にある。
The epoxy equivalent of the component (A) is not particularly limited, but may be 90 to 300 g / eq, 110 to 290 g / eq, or 110 to 290 g / eq. When the epoxy equivalent of the component (A) is in such a range, the fluidity tends to be secured while maintaining the bulk strength of the film adhesive.
(A)成分の市販品としては、例えば、DIC株式会社製のHP-7200シリーズ、新日鉄住金化学株式会社製のYDCNシリーズ、日本化薬株式会社製のNC-3000、NC-7000シリーズ等が挙げられる。
Examples of commercially available components (A) include HP-7200 series manufactured by DIC Corporation, YDCN series manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., NC-3000 series and NC-7000 series manufactured by Nippon Kayaku Co., Ltd., and the like. It is done.
(B)成分は、特に制限なく、エポキシ樹脂の硬化剤として一般的に使用されているものを用いることができる。(B)成分としては、例えば、フェノール樹脂、エステル化合物、芳香族アミン、脂肪族アミン、酸無水物等が挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、反応性及び経時安定性の観点から、(B)成分はフェノール樹脂を含んでいてよい。
(B) There is no restriction | limiting in particular and what is generally used as a hardening | curing agent of an epoxy resin can be used. (B) As a component, a phenol resin, an ester compound, an aromatic amine, an aliphatic amine, an acid anhydride etc. are mentioned, for example. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of reactivity and stability over time, the component (B) may contain a phenol resin.
フェノール樹脂は、分子内にフェノール性水酸基を有するものであれば特に制限なく用いることができる。フェノール樹脂としては、例えば、フェノール、クレゾール、レゾルシン、カテコール、ビスフェノールA、ビスフェノールF、フェニルフェノール、アミノフェノール等のフェノール類及び/又はα-ナフトール、β-ナフトール、ジヒドロキシナフタレン等のナフトール類とホルムアルデヒド等のアルデヒド基を有する化合物とを酸性触媒下で縮合又は共縮合させて得られるノボラック型フェノール樹脂、アリル化ビスフェノールA、アリル化ビスフェノールF、アリル化ナフタレンジオール、フェノールノボラック、フェノール等のフェノール類及び/又はナフトール類とジメトキシパラキシレン又はビス(メトキシメチル)ビフェニルから合成されるフェノールアラルキル樹脂、ナフトールアラルキル樹脂、ビフェニルアラルキル型フェノール樹脂、フェニルアラルキル型フェノール樹脂などが挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、耐熱性の観点から、フェノール樹脂は、85℃、85%RHの恒温恒湿槽に48時間の条件において、吸水率が2質量%以下であり、かつ熱重量分析計(TGA)で測定した350℃での加熱質量減少率(昇温速度:5℃/min、雰囲気:窒素)が5質量%未満であるものが好ましい。
The phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol, and / or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene, and formaldehyde. A novolak-type phenol resin obtained by condensation or co-condensation with a compound having an aldehyde group in the presence of an acidic catalyst, phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolak, phenol, and / or Or phenol aralkyl resins, naphthol aralkyl resins, biphenyl aralkyl type resins synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl Examples thereof include an enol resin and a phenylaralkyl type phenol resin. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of heat resistance, the phenol resin has a water absorption of 2% by mass or less in a constant temperature and humidity chamber of 85 ° C. and 85% RH for 48 hours, and a thermogravimetric analyzer (TGA). It is preferable that the heating mass decrease rate (heating rate: 5 ° C./min, atmosphere: nitrogen) at 350 ° C. measured in step 1 is less than 5% by mass.
フェノール樹脂の市販品としては、例えば、フェノライトKAシリーズ、TDシリーズ(DIC株式会社製)、ミレックスXLCシリーズ、XLシリーズ(三井化学株式会社製)、HEシリーズ(エア・ウォーター株式会社製)等が挙げられる。
Examples of commercially available phenol resins include Phenolite KA series, TD series (manufactured by DIC Corporation), Millex XLC series, XL series (manufactured by Mitsui Chemicals), and HE series (manufactured by Air Water Corporation). Can be mentioned.
フェノール樹脂の水酸基当量は、特に制限されないが、80~250g/eq、90~200g/eq、又は100~180g/eqであってよい。フェノール樹脂の水酸基当量がこのような範囲にあると、フィルム状接着剤の流動性を保ちつつ、接着力をより高く維持できる傾向にある。
The hydroxyl equivalent of the phenol resin is not particularly limited, but may be 80 to 250 g / eq, 90 to 200 g / eq, or 100 to 180 g / eq. When the hydroxyl equivalent of the phenol resin is in such a range, the adhesive strength tends to be maintained higher while maintaining the fluidity of the film adhesive.
(A)成分のエポキシ当量と(B)成分の水酸基当量との比(エポキシ樹脂のエポキシ当量/フェノール樹脂の水酸基当量)は、硬化性の観点から、0.30/0.70~0.70/0.30、0.35/0.65~0.65/0.35、0.40/0.60~0.60/0.40、又は0.45/0.55~0.55/0.45であってよい。当該当量比が0.30/0.70以上であると、より充分な硬化性が得られる傾向にある。当該当量比が0.70/0.30以下であると、粘度が高くなり過ぎることを防ぐことができ、より充分な流動性を得ることができる。
The ratio of the epoxy equivalent of component (A) to the hydroxyl equivalent of component (B) (epoxy equivalent of epoxy resin / hydroxyl equivalent of phenol resin) is 0.30 / 0.70 to 0.70 from the viewpoint of curability. /0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / It may be 0.45. When the equivalent ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70 / 0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.
(A)成分及び(B)成分の合計の含有量は、熱硬化性樹脂組成物全量を基準として、10~80質量%であってよい。(A)成分及び(B)成分の合計の含有量は、20質量%以上、25質量%以上、又は30質量%以上であってもよく、70質量%以下、60質量%以下、又は50質量%以下であってもよい。(A)成分及び(B)成分の合計の含有量が、熱硬化性樹脂組成物全量を基準として、10質量%以上であると、充分な接着力が得られる傾向にある。(A)成分及び(B)成分の合計の含有量が、熱硬化性樹脂組成物全量を基準として、80質量%以下であると、粘度が低くなり過ぎることを防ぐことができ、ブリード量をより抑えることができる傾向にある。
The total content of the component (A) and the component (B) may be 10 to 80% by mass based on the total amount of the thermosetting resin composition. The total content of the component (A) and the component (B) may be 20% by mass or more, 25% by mass or more, or 30% by mass or more, and is 70% by mass or less, 60% by mass or less, or 50% by mass. % Or less. When the total content of the component (A) and the component (B) is 10% by mass or more based on the total amount of the thermosetting resin composition, sufficient adhesive force tends to be obtained. When the total content of the component (A) and the component (B) is 80% by mass or less based on the total amount of the thermosetting resin composition, the viscosity can be prevented from becoming too low, and the amount of bleed can be reduced. There is a tendency to be able to suppress more.
<(C)第1のエラストマ>
(C)成分は、重量平均分子量が20万~130万であり、カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有するエラストマである。(C)成分は、カルボキシ基を有するエラストマであってよい。熱硬化性樹脂組成物が(C)成分を含有することによって、熱圧着時に架橋反応が進行し、熱硬化性樹脂組成物が増粘して、高温加圧処理時のブリード量の増加を抑制することが可能となり得る。(C)成分は、エラストマを構成する重合体のガラス転移温度(Tg)が50℃以下であるものが好ましい。 <(C) First elastomer>
Component (C) is an elastomer having a weight average molecular weight of 200,000 to 1,300,000 and having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group. The component (C) may be an elastomer having a carboxy group. When the thermosetting resin composition contains the component (C), the crosslinking reaction proceeds during thermocompression bonding, the thermosetting resin composition thickens, and the increase in the amount of bleed during high-temperature pressure treatment is suppressed. Can be possible. The component (C) preferably has a glass transition temperature (Tg) of the polymer constituting the elastomer of 50 ° C. or lower.
(C)成分は、重量平均分子量が20万~130万であり、カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有するエラストマである。(C)成分は、カルボキシ基を有するエラストマであってよい。熱硬化性樹脂組成物が(C)成分を含有することによって、熱圧着時に架橋反応が進行し、熱硬化性樹脂組成物が増粘して、高温加圧処理時のブリード量の増加を抑制することが可能となり得る。(C)成分は、エラストマを構成する重合体のガラス転移温度(Tg)が50℃以下であるものが好ましい。 <(C) First elastomer>
Component (C) is an elastomer having a weight average molecular weight of 200,000 to 1,300,000 and having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group. The component (C) may be an elastomer having a carboxy group. When the thermosetting resin composition contains the component (C), the crosslinking reaction proceeds during thermocompression bonding, the thermosetting resin composition thickens, and the increase in the amount of bleed during high-temperature pressure treatment is suppressed. Can be possible. The component (C) preferably has a glass transition temperature (Tg) of the polymer constituting the elastomer of 50 ° C. or lower.
(C)成分は、カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有するものであれば特に制限されないが、例えば、アクリル樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリイミド樹脂、シリコーン樹脂、ブタジエン樹脂、アクリロニトリル樹脂及びこれらの変性体等であって、カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有するものが挙げられる。
The component (C) is not particularly limited as long as it has at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group. For example, an acrylic resin, a polyester resin, a polyamide resin, a polyimide resin, a silicone resin, Examples thereof include butadiene resins, acrylonitrile resins, and modified products thereof having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group.
(C)成分は、溶剤への溶解性、流動性の観点から、カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有するアクリル樹脂であってよい。ここで、アクリル樹脂とは、(メタ)アクリル酸エステルに由来する構成単位を含むポリマーを意味する。アクリル樹脂は、構成単位として、アルコール性若しくはフェノール性水酸基、又はカルボキシ基を有する(メタ)アクリル酸エステルに由来する構成単位を含むポリマーであることが好ましい。また、アクリル樹脂は、(メタ)アクリル酸エステルとアクリルニトリルとの共重合体等のアクリルゴムであってもよい。
The component (C) may be an acrylic resin having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group from the viewpoint of solubility in a solvent and fluidity. Here, the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester. The acrylic resin is preferably a polymer including a structural unit derived from a (meth) acrylic acid ester having an alcoholic or phenolic hydroxyl group or a carboxy group as a structural unit. The acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile.
(C)成分のガラス転移温度(Tg)は、-50~50℃又は-30~30℃であってよい。アクリル樹脂のTgが-50℃以上であると、熱硬化性樹脂組成物の柔軟性が高くなり過ぎることを防ぐことができる傾向にある。これにより、ウェハダイシング時にフィルム状接着剤を切断し易くなり、バリの発生を防ぐことが可能となる。アクリル樹脂のTgが50℃以下であると、熱硬化性樹脂組成物の柔軟性の低下を抑えることができる傾向にある。これにより、フィルム状接着剤をウェハに貼り付ける際に、ボイドを充分に埋め込み易くなる傾向にある。また、ウェハの密着性の低下によるダイシング時のチッピングを防ぐことが可能となる。ここで、ガラス転移温度(Tg)は、DSC(熱示差走査熱量計)(例えば、株式会社リガク製「Thermo Plus 2」)を用いて測定した値を意味する。
The glass transition temperature (Tg) of the component (C) may be −50 to 50 ° C. or −30 to 30 ° C. If the Tg of the acrylic resin is −50 ° C. or higher, the thermosetting resin composition tends to be prevented from becoming too flexible. Thereby, it becomes easy to cut | disconnect a film adhesive at the time of wafer dicing, and it becomes possible to prevent generation | occurrence | production of a burr | flash. It exists in the tendency which can suppress the fall of the softness | flexibility of a thermosetting resin composition as Tg of acrylic resin is 50 degrees C or less. Thereby, when sticking a film adhesive on a wafer, it exists in the tendency for a void to be embedded easily. Further, chipping during dicing due to a decrease in wafer adhesion can be prevented. Here, the glass transition temperature (Tg) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).
(C)成分の重量平均分子量(Mw)は、20万~130万である。(C)成分のMwは、30万以上、40万以上、又は45万以上であってもよく、110万以下、100万以下、又は95万以下であってもよい。アクリル樹脂のMwがこのような範囲にあると、フィルム形成性、フィルム状における強度、可撓性、タック性等を適切に制御することができると共に、リフロー性に優れ、埋め込み性を向上することができる。ここで、Mwは、ゲルパーミエーションクロマトグラフィー(GPC)で測定し、標準ポリスチレンによる検量線を用いて換算した値を意味する。
The weight average molecular weight (Mw) of the component (C) is 200,000 to 1.3 million. The Mw of the component (C) may be 300,000 or more, 400,000 or more, or 450,000 or more, or 1.1 million or less, 1 million or less, or 950,000 or less. When the Mw of the acrylic resin is in such a range, the film formability, strength in film form, flexibility, tackiness, etc. can be appropriately controlled, and the reflow property is excellent and the embedding property is improved. Can do. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
カルボキシ基を有する(C)成分の酸価は、硬化性の観点から、1~60mgKOH/g、3~50mgKOH/g、又は5~40mgKOH/gであってよい。酸価がこのような範囲にあると、ワニスにおけるゲル化及びBステージ状態の流動性の低下を防ぐことができる傾向にある。
The acid value of the component (C) having a carboxy group may be 1 to 60 mgKOH / g, 3 to 50 mgKOH / g, or 5 to 40 mgKOH / g from the viewpoint of curability. When the acid value is in such a range, gelation in the varnish and a decrease in fluidity in the B stage state tend to be prevented.
水酸基を有する(C)成分の水酸基価は、硬化性の観点から、1~60mgKOH/g、3~50mgKOH/g、又は5~40mgKOH/gであってよい。水酸基価がこのような範囲にあると、ワニスにおけるゲル化及びBステージ状態の流動性の低下を防ぐことができる傾向にある。
The hydroxyl value of the component (C) having a hydroxyl group may be 1 to 60 mgKOH / g, 3 to 50 mgKOH / g, or 5 to 40 mgKOH / g from the viewpoint of curability. When the hydroxyl value is in such a range, gelation in the varnish and a decrease in fluidity in the B stage state tend to be prevented.
(C)成分の市販品としては、例えば、SG-70L、SG-708-6、WS-023 EK30、SG-280 EK23(いずれもナガセケムテックス株式会社製)が挙げられる。
Examples of the commercially available component (C) include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23 (all manufactured by Nagase ChemteX Corporation).
<(D)第2のエラストマ>
(D)成分は、重量平均分子量が20万~130万であり、カルボキシ基及び水酸基を有しないエラストマである。(D)成分は、カルボキシ基及び水酸基以外の官能基(例えば、グリシジル基等)を有するエラストマであってよい。熱硬化性樹脂組成物が(D)成分を含有することによって、経時安定性が良好となり得る。(D)成分は、エラストマを構成する重合体のガラス転移温度(Tg)が50℃以下であるものが好ましい。 <(D) Second elastomer>
Component (D) is an elastomer having a weight average molecular weight of 200,000 to 1.3 million and having no carboxy group and no hydroxyl group. The component (D) may be an elastomer having a functional group other than a carboxy group and a hydroxyl group (for example, a glycidyl group). When the thermosetting resin composition contains the component (D), stability over time can be improved. The component (D) preferably has a glass transition temperature (Tg) of the polymer constituting the elastomer of 50 ° C. or lower.
(D)成分は、重量平均分子量が20万~130万であり、カルボキシ基及び水酸基を有しないエラストマである。(D)成分は、カルボキシ基及び水酸基以外の官能基(例えば、グリシジル基等)を有するエラストマであってよい。熱硬化性樹脂組成物が(D)成分を含有することによって、経時安定性が良好となり得る。(D)成分は、エラストマを構成する重合体のガラス転移温度(Tg)が50℃以下であるものが好ましい。 <(D) Second elastomer>
Component (D) is an elastomer having a weight average molecular weight of 200,000 to 1.3 million and having no carboxy group and no hydroxyl group. The component (D) may be an elastomer having a functional group other than a carboxy group and a hydroxyl group (for example, a glycidyl group). When the thermosetting resin composition contains the component (D), stability over time can be improved. The component (D) preferably has a glass transition temperature (Tg) of the polymer constituting the elastomer of 50 ° C. or lower.
(D)成分は、カルボキシ基及び水酸基を有しないものであれば特に制限されないが、例えば、アクリル樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリイミド樹脂、シリコーン樹脂、ブタジエン樹脂、アクリロニトリル樹脂及びこれらの変性体等であって、カルボキシ基及び水酸基を有しないものが挙げられる。
The component (D) is not particularly limited as long as it does not have a carboxy group and a hydroxyl group, and examples thereof include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, acrylonitrile resins, and modified products thereof. And what does not have a carboxy group and a hydroxyl group is mentioned.
(D)成分は、溶剤への溶解性、流動性の観点から、カルボキシ基及び水酸基を有しないアクリル樹脂であってよい。アクリル樹脂は、上記と同義である。アクリル樹脂は、構成単位として、グリシジル基等のエポキシ基を有する官能性モノマー((メタ)アクリル酸エステル等)を含むポリマーであることが好ましい。また、アクリル樹脂は、(メタ)アクリル酸エステルとアクリルニトリルとの共重合体等のアクリルゴムであってもよい。
The component (D) may be an acrylic resin having no carboxy group and no hydroxyl group from the viewpoint of solubility in a solvent and fluidity. The acrylic resin has the same meaning as described above. The acrylic resin is preferably a polymer containing a functional monomer (such as (meth) acrylic acid ester) having an epoxy group such as a glycidyl group as a structural unit. The acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile.
(D)成分のガラス転移温度(Tg)は、-50~50℃又は-30~30℃であってよい。アクリル樹脂のTgが-50℃以上であると、熱硬化性樹脂組成物の柔軟性が高くなり過ぎることを防ぐことができる傾向にある。これにより、ウェハダイシング時にフィルム状接着剤を切断し易くなり、バリの発生を防ぐことが可能となる。アクリル樹脂のTgが50℃以下であると、熱硬化性樹脂組成物の柔軟性の低下を抑えることができる傾向にある。これにより、フィルム状接着剤をウェハに貼り付ける際に、ボイドを充分に埋め込み易くなる傾向にある。また、ウェハの密着性の低下によるダイシング時のチッピングを防ぐことが可能となる。ここで、ガラス転移温度(Tg)は、DSC(熱示差走査熱量計)(例えば、株式会社リガク製「Thermo Plus 2」)を用いて測定した値を意味する。
The glass transition temperature (Tg) of the component (D) may be −50 to 50 ° C. or −30 to 30 ° C. If the Tg of the acrylic resin is −50 ° C. or higher, the thermosetting resin composition tends to be prevented from becoming too flexible. Thereby, it becomes easy to cut | disconnect a film adhesive at the time of wafer dicing, and it becomes possible to prevent generation | occurrence | production of a burr | flash. It exists in the tendency which can suppress the fall of the softness | flexibility of a thermosetting resin composition as Tg of acrylic resin is 50 degrees C or less. Thereby, when sticking a film adhesive on a wafer, it exists in the tendency for a void to be embedded easily. Further, chipping during dicing due to a decrease in wafer adhesion can be prevented. Here, the glass transition temperature (Tg) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).
(D)成分の重量平均分子量(Mw)は、20万~130万である。(C)成分のMwは、30万以上、40万以上、50万以上、又は60万以上であってもよく、120万以下、110万以下、100万以下、95万以下、又は90万以下であってもよい。アクリル樹脂のMwがこのような範囲にあると、フィルム形成性、フィルム状における強度、可撓性、タック性等を適切に制御することができると共に、リフロー性に優れ、埋め込み性を向上することができる。ここで、Mwは、ゲルパーミエーションクロマトグラフィー(GPC)で測定し、標準ポリスチレンによる検量線を用いて換算した値を意味する。
The weight average molecular weight (Mw) of the component (D) is 200,000 to 1.3 million. (C) Mw of component may be 300,000 or more, 400,000 or more, 500,000 or more, or 600,000 or more, 1.2 million or less, 1.1 million or less, 1 million or less, 950,000 or less, or 900,000 or less It may be. When the Mw of the acrylic resin is in such a range, the film formability, strength in film form, flexibility, tackiness, etc. can be appropriately controlled, and the reflow property is excellent and the embedding property is improved. Can do. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
(D)成分の市販品としては、例えば、SG-P3、SG-80H、HTR-860P-3CSP(いずれもナガセケムテックス株式会社製)が挙げられる。
Examples of the commercially available component (D) include SG-P3, SG-80H, and HTR-860P-3CSP (all manufactured by Nagase ChemteX Corporation).
(C)成分及び(D)成分の合計の含有量は、熱硬化性樹脂組成物全量を基準として、40質量%以下である。(C)成分及び(D)成分の合計の含有量は、35質量%以下、30質量%以下、又は28質量%以下であってもよい。(C)成分及び(D)成分の合計の含有量は、熱硬化性樹脂組成物全量を基準として、40質量%以下であると、埋め込み性により優れる傾向にある。(C)成分及び(D)成分の合計の含有量は、1質量%以上、5質量%以上、10質量%以上、又は15質量%以上であってもよい。
The total content of the component (C) and the component (D) is 40% by mass or less based on the total amount of the thermosetting resin composition. The total content of the component (C) and the component (D) may be 35% by mass or less, 30% by mass or less, or 28% by mass or less. When the total content of the component (C) and the component (D) is 40% by mass or less based on the total amount of the thermosetting resin composition, embedding tends to be more excellent. 1 mass% or more, 5 mass% or more, 10 mass% or more, or 15 mass% or more may be sufficient as content of (C) component and (D) component.
熱硬化性樹脂組成物における(C)成分及び(D)成分の総量に対する(C)成分の質量比((C)成分の含有量/(C)成分及び(D)成分の含有量の総量)は、0.01~0.50であってよい。質量比は、0.02以上、0.03以上、又は0.05以上であってもよく、0.30以下、0.20以下、又は0.10以下であってもよい。(C)成分及び(D)成分に対する(C)成分の質量比が0.01以上であると、高温加圧処理時のブリード量の増加をより抑制することができる傾向にある。(C)成分及び(D)成分に対する(C)成分の質量比が0.50以下であると、より良好な埋め込み性を維持することができる傾向にある。
Mass ratio of component (C) to the total amount of component (C) and component (D) in the thermosetting resin composition (content of component (C) / total amount of component (C) and component (D)) May be between 0.01 and 0.50. The mass ratio may be 0.02 or more, 0.03 or more, or 0.05 or more, and may be 0.30 or less, 0.20 or less, or 0.10 or less. When the mass ratio of the component (C) to the component (C) and the component (D) is 0.01 or more, the increase in the amount of bleed during the high-temperature pressure treatment tends to be further suppressed. When the mass ratio of the component (C) to the component (C) and the component (D) is 0.50 or less, better embedding property tends to be maintained.
<(E)成分:無機フィラー>
本実施形態に係る熱硬化性樹脂組成物は、(E)無機フィラーをさらに含有していてもよい。無機フィラーとしては、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、ホウ酸アルミウィスカ、窒化ホウ素、結晶性シリカ、非晶性シリカ等が挙げられる。これらは1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。得られるフィルム状接着剤の熱伝導性がより向上する観点から、無機フィラーは、酸化アルミニウム、窒化アルミニウム、窒化ホウ素、結晶性シリカ又は非晶性シリカを含んでいてよい。また、熱硬化性樹脂組成物の溶融粘度を調整する観点及び熱硬化性樹脂組成物にチキソトロピック性を付与する観点から、無機フィラーは、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、結晶性シリカ又は非晶性シリカを含んでいてよい。 <(E) component: inorganic filler>
The thermosetting resin composition according to the present embodiment may further contain (E) an inorganic filler. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystal Examples thereof include crystalline silica and amorphous silica. These may be used individually by 1 type and may be used in combination of 2 or more type. From the viewpoint of further improving the thermal conductivity of the obtained film adhesive, the inorganic filler may contain aluminum oxide, aluminum nitride, boron nitride, crystalline silica, or amorphous silica. Further, from the viewpoint of adjusting the melt viscosity of the thermosetting resin composition and from the viewpoint of imparting thixotropic properties to the thermosetting resin composition, the inorganic filler is aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, Calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystalline silica or amorphous silica may be included.
本実施形態に係る熱硬化性樹脂組成物は、(E)無機フィラーをさらに含有していてもよい。無機フィラーとしては、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、ホウ酸アルミウィスカ、窒化ホウ素、結晶性シリカ、非晶性シリカ等が挙げられる。これらは1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。得られるフィルム状接着剤の熱伝導性がより向上する観点から、無機フィラーは、酸化アルミニウム、窒化アルミニウム、窒化ホウ素、結晶性シリカ又は非晶性シリカを含んでいてよい。また、熱硬化性樹脂組成物の溶融粘度を調整する観点及び熱硬化性樹脂組成物にチキソトロピック性を付与する観点から、無機フィラーは、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、結晶性シリカ又は非晶性シリカを含んでいてよい。 <(E) component: inorganic filler>
The thermosetting resin composition according to the present embodiment may further contain (E) an inorganic filler. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystal Examples thereof include crystalline silica and amorphous silica. These may be used individually by 1 type and may be used in combination of 2 or more type. From the viewpoint of further improving the thermal conductivity of the obtained film adhesive, the inorganic filler may contain aluminum oxide, aluminum nitride, boron nitride, crystalline silica, or amorphous silica. Further, from the viewpoint of adjusting the melt viscosity of the thermosetting resin composition and from the viewpoint of imparting thixotropic properties to the thermosetting resin composition, the inorganic filler is aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, Calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystalline silica or amorphous silica may be included.
(E)成分の平均粒径は、接着性がより向上する観点から、0.005~0.5μm又は0.05~0.3μmであってよい。ここで、平均粒径は、BET比表面積から換算することによって求められる値を意味する。
The average particle diameter of the component (E) may be 0.005 to 0.5 μm or 0.05 to 0.3 μm from the viewpoint of further improving the adhesiveness. Here, an average particle diameter means the value calculated | required by converting from a BET specific surface area.
(E)成分は、その表面と溶剤、他の成分等との相溶性、接着強度の観点から表面処理剤によって表面処理されていてよい。表面処理剤としては、例えば、シランカップリング剤等が挙げられる。シランカップリング剤の官能基としては、例えば、ビニル基、(メタ)アクリロイル基、エポキシ基、メルカプト基、アミノ基、ジアミノ基、アルコキシ基、エトキシ基等が挙げられる。
(E) The component may be surface-treated with a surface treatment agent from the viewpoint of compatibility between the surface and the solvent, other components, and the like, and adhesive strength. Examples of the surface treatment agent include a silane coupling agent. Examples of the functional group of the silane coupling agent include a vinyl group, a (meth) acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, and an ethoxy group.
(E)成分の含有量は、(A)成分、(B)成分、(C)成分、及び(D)成分の総量100質量部に対して、10~90質量部又は10~50質量部であってよい。(E)成分の含有量が、(A)成分、(B)成分、(C)成分、及び(D)成分の総量100質量部に対して、10質量部以上であると、硬化前の接着層のダイシング性が向上し、硬化後の接着層の接着力が向上する傾向にある。(E)成分の含有量が、(A)成分、(B)成分、(C)成分、及び(D)成分の総量100質量部に対して、90質量部以下であると、流動性の低下を抑制でき、硬化後のフィルム状接着剤の弾性率が高くなり過ぎることを防ぐことが可能となる。
The content of the component (E) is 10 to 90 parts by mass or 10 to 50 parts by mass with respect to 100 parts by mass of the total amount of the components (A), (B), (C), and (D). It may be. Adhesion before hardening that content of (E) component is 10 mass parts or more with respect to 100 mass parts of total amounts of (A) component, (B) component, (C) component, and (D) component The dicing property of the layer is improved, and the adhesive force of the adhesive layer after curing tends to be improved. When the content of the component (E) is 90 parts by mass or less with respect to 100 parts by mass of the total amount of the components (A), (B), (C), and (D), the fluidity is lowered. And the elastic modulus of the cured film adhesive can be prevented from becoming too high.
<(F)成分:硬化促進剤>
本実施形態に係る熱硬化性樹脂組成物は、(F)硬化促進剤をさらに含有していてもよい。硬化促進剤は、特に限定されず、一般に使用されるものを用いることができる。(F)成分としては、例えば、イミダゾール類及びその誘導体、有機リン系化合物、第二級アミン類、第三級アミン類、第四級アンモニウム塩等が挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、反応性の観点から(F)成分はイミダゾール類及びその誘導体であってよい。 <(F) component: hardening accelerator>
The thermosetting resin composition according to this embodiment may further contain (F) a curing accelerator. A hardening accelerator is not specifically limited, What is generally used can be used. Examples of the component (F) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of reactivity, the component (F) may be imidazoles and derivatives thereof.
本実施形態に係る熱硬化性樹脂組成物は、(F)硬化促進剤をさらに含有していてもよい。硬化促進剤は、特に限定されず、一般に使用されるものを用いることができる。(F)成分としては、例えば、イミダゾール類及びその誘導体、有機リン系化合物、第二級アミン類、第三級アミン類、第四級アンモニウム塩等が挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、反応性の観点から(F)成分はイミダゾール類及びその誘導体であってよい。 <(F) component: hardening accelerator>
The thermosetting resin composition according to this embodiment may further contain (F) a curing accelerator. A hardening accelerator is not specifically limited, What is generally used can be used. Examples of the component (F) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of reactivity, the component (F) may be imidazoles and derivatives thereof.
イミダゾール類としては、例えば、2-メチルイミダゾール、1-ベンジル-2-メチルイミダゾール、1-シアノエチル-2-フェニルイミダゾール、1-シアノエチル-2-メチルイミダゾール等が挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。
Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, and the like. You may use these individually by 1 type or in combination of 2 or more types.
(F)成分の含有量は、(A)成分、(B)成分、(C)成分、及び(D)成分の総量100質量部に対して、0.04~3質量部又は0.04~0.2質量部であってよい。(F)成分の含有量がこのような範囲にあると、硬化性と信頼性とを両立することができる傾向にある。
The content of the component (F) is 0.04 to 3 parts by mass or 0.04 to 0.04 to 100 parts by mass of the total amount of the components (A), (B), (C), and (D). It may be 0.2 parts by mass. When content of (F) component exists in such a range, it exists in the tendency which can make sclerosis | hardenability and reliability compatible.
<その他の成分>
本実施形態に係る熱硬化性樹脂組成物は、その他の成分として、抗酸化剤、シランカップリング剤、レオロジーコントロール剤等をさらに含有していてもよい。これらの成分の含有量は、(A)成分、(B)成分、(C)成分、及び(D)成分の総量100質量部に対して、0.02~3質量部であってよい。 <Other ingredients>
The thermosetting resin composition according to the present embodiment may further contain an antioxidant, a silane coupling agent, a rheology control agent, and the like as other components. The content of these components may be 0.02 to 3 parts by mass with respect to 100 parts by mass as the total of components (A), (B), (C), and (D).
本実施形態に係る熱硬化性樹脂組成物は、その他の成分として、抗酸化剤、シランカップリング剤、レオロジーコントロール剤等をさらに含有していてもよい。これらの成分の含有量は、(A)成分、(B)成分、(C)成分、及び(D)成分の総量100質量部に対して、0.02~3質量部であってよい。 <Other ingredients>
The thermosetting resin composition according to the present embodiment may further contain an antioxidant, a silane coupling agent, a rheology control agent, and the like as other components. The content of these components may be 0.02 to 3 parts by mass with respect to 100 parts by mass as the total of components (A), (B), (C), and (D).
本実施形態に係る接着剤組成物は、溶剤で希釈された接着剤ワニスとして用いてもよい。溶剤は、(E)成分以外の成分を溶解できるものであれば特に制限されない。溶剤としては、例えば、トルエン、キシレン、メシチレン、クメン、p-シメン等の芳香族炭化水素;ヘキサン、ヘプタン等の脂肪族炭化水素;メチルシクロヘキサンなどの環状アルカン;テトラヒドロフラン、1,4-ジオキサン等の環状エーテル;アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン、4-ヒドロキシ-4-メチル-2-ペンタノン等のケトン;酢酸メチル、酢酸エチル、酢酸ブチル、乳酸メチル、乳酸エチル、γ-ブチロラクトン等のエステル;エチレンカーボネート、プロピレンカーボネート等の炭酸エステル;N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、N-メチル-2-ピロリドン等のアミドなどが挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらのうち、溶剤は、溶解性及び沸点の観点から、トルエン、キシレン、メチルエチルケトン、メチルイソブチルケトン、又はシクロヘキサンであってもよい。
The adhesive composition according to this embodiment may be used as an adhesive varnish diluted with a solvent. The solvent is not particularly limited as long as it can dissolve components other than the component (E). Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-dioxane and the like. Cyclic ether; ketone such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; ester such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone; Examples thereof include carbonic acid esters such as ethylene carbonate and propylene carbonate; amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone. You may use these individually by 1 type or in combination of 2 or more types. Among these, the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexane from the viewpoints of solubility and boiling point.
接着剤ワニス中の固形成分濃度は、接着剤ワニスの全質量を基準として、10~80質量%であってよい。
The solid component concentration in the adhesive varnish may be 10 to 80% by mass based on the total mass of the adhesive varnish.
接着剤ワニスは、(A)成分、(B)成分、(C)成分、(D)成分及び溶剤、並びに、必要に応じて、(E)成分、(F)成分、及びその他の成分を混合、混練することによって調製することができる。混合及び混練は、通常の撹拌機、らいかい機、三本ロール、ボールミル、ビーズミル等の分散機を適宜、組み合わせて行うことができる。(E)成分を含有する場合、(E)成分と低分子量成分を予め混合した後、高分子量成分を配合することによって、混合する時間を短縮することができる。また、接着剤ワニスを調製した後、真空脱気等によってワニス中の気泡を除去してよい。
Adhesive varnish mixes (A) component, (B) component, (C) component, (D) component and solvent, and (E) component, (F) component, and other components as necessary It can be prepared by kneading. Mixing and kneading can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a triple roll, a ball mill, and a bead mill. When the component (E) is contained, the mixing time can be reduced by mixing the component (E) and the low molecular weight component in advance and then blending the high molecular weight component. Further, after the adhesive varnish is prepared, bubbles in the varnish may be removed by vacuum degassing or the like.
[フィルム状接着剤]
図1は、一実施形態に係るフィルム状接着剤を示す模式断面図である。フィルム状接着剤10は、上述の接着剤組成物をフィルム状に形成してなるものである。フィルム状接着剤10は、半硬化(Bステージ)状態であってよい。このようなフィルム状接着剤10は、接着剤組成物を支持フィルムに塗布することによって形成することができる。接着剤ワニスを用いる場合は、接着剤ワニスを支持フィルムに塗布し、溶剤を加熱乾燥して除去することによってフィルム状接着剤10を形成することができる。 [Film adhesive]
FIG. 1 is a schematic cross-sectional view showing a film adhesive according to an embodiment. Thefilm adhesive 10 is formed by forming the above-described adhesive composition into a film. The film adhesive 10 may be in a semi-cured (B stage) state. Such a film adhesive 10 can be formed by applying an adhesive composition to a support film. In the case of using an adhesive varnish, the film adhesive 10 can be formed by applying the adhesive varnish to a support film and removing the solvent by heating and drying.
図1は、一実施形態に係るフィルム状接着剤を示す模式断面図である。フィルム状接着剤10は、上述の接着剤組成物をフィルム状に形成してなるものである。フィルム状接着剤10は、半硬化(Bステージ)状態であってよい。このようなフィルム状接着剤10は、接着剤組成物を支持フィルムに塗布することによって形成することができる。接着剤ワニスを用いる場合は、接着剤ワニスを支持フィルムに塗布し、溶剤を加熱乾燥して除去することによってフィルム状接着剤10を形成することができる。 [Film adhesive]
FIG. 1 is a schematic cross-sectional view showing a film adhesive according to an embodiment. The
支持フィルムとしては、特に制限はなく、例えば、ポリテトラフルオロエチレン、ポリエチレン、ポリプロピレン、ポリメチルペンテン、ポリエチレンテレフタレート、ポリイミド等のフィルムが挙げられる。支持フィルムの厚さは、例えば、60~200μm又は70~170μmであってよい。
The support film is not particularly limited, and examples thereof include films of polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, polyimide, and the like. The thickness of the support film may be, for example, 60 to 200 μm or 70 to 170 μm.
接着剤ワニスを支持フィルムに塗布する方法としては、公知の方法を用いることができ、例えば、ナイフコート法、ロールコート法、スプレーコート法、グラビアコート法、バーコート法、カーテンコート法等が挙げられる。加熱乾燥の条件は、使用した溶剤が充分に揮発する条件であれば特に制限はないが、例えば、50~200℃で0.1~90分間であってもよい。
As a method of applying the adhesive varnish to the support film, a known method can be used, for example, knife coating method, roll coating method, spray coating method, gravure coating method, bar coating method, curtain coating method, etc. It is done. The conditions for the heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, but may be, for example, 50 to 200 ° C. for 0.1 to 90 minutes.
フィルム状接着剤の厚さは、用途に合わせて、適宜調整することができる。フィルム状接着剤の厚さは、半導体チップ、ワイヤ、基板の配線回路等の凹凸などを充分に埋め込む観点から、20~200μm、30~200μm、又は40~150μmであってよい。
The thickness of the film adhesive can be appropriately adjusted according to the application. The thickness of the film adhesive may be 20 to 200 μm, 30 to 200 μm, or 40 to 150 μm from the viewpoint of sufficiently embedding irregularities such as a semiconductor chip, a wire, and a wiring circuit of a substrate.
[接着シート]
図2は、一実施形態に係る接着シートを示す模式断面図である。接着シート100は、基材20と基材上に設けられた上述のフィルム状接着剤10とを備える。 [Adhesive sheet]
FIG. 2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment. Theadhesive sheet 100 includes a base material 20 and the above-described film adhesive 10 provided on the base material.
図2は、一実施形態に係る接着シートを示す模式断面図である。接着シート100は、基材20と基材上に設けられた上述のフィルム状接着剤10とを備える。 [Adhesive sheet]
FIG. 2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment. The
基材20は、特に制限されないが、基材フィルムであってよい。基材フィルムは、上述の支持フィルムと同様のものであってよい。
The substrate 20 is not particularly limited, but may be a substrate film. The base film may be the same as the above support film.
基材20は、ダイシングテープであってもよい。このような接着シートは、ダイシングダイボンディング一体型接着シートとして使用することができる。この場合、半導体ウェハへのラミネート工程が1回となることから、作業の効率化が可能である。
The base material 20 may be a dicing tape. Such an adhesive sheet can be used as a dicing die bonding integrated adhesive sheet. In this case, since the lamination process to the semiconductor wafer is performed once, the work efficiency can be improved.
ダイシングテープとしては、例えば、ポリテトラフルオロエチレンフィルム、ポリエチレンテレフタレートフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリイミドフィルム等のプラスチックフィルム等が挙げられる。また、ダイシングテープは、必要に応じて、プライマー塗布、UV処理、コロナ放電処理、研磨処理、エッチング処理等の表面処理が行われていてもよい。ダイシングテープは、粘着性を有するものであることが好ましい。このようなダイシングテープは、上述のプラスチックフィルムに粘着性を付与したものであってもよく、上述のプラスチックフィルムの片面に粘着剤層を設けたものであってもよい。
Examples of the dicing tape include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. In addition, the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as necessary. The dicing tape is preferably one having adhesiveness. Such a dicing tape may be one obtained by imparting adhesiveness to the above-mentioned plastic film, or may be one obtained by providing an adhesive layer on one side of the above-mentioned plastic film.
接着シート100は、上述のフィルム状接着剤を形成する方法と同様に、接着剤組成物を基材フィルムに塗布することによって形成することができる。接着剤組成物を基材20に塗布する方法は、上述の接着剤組成物を支持フィルムに塗布する方法と同様であってよい。
The adhesive sheet 100 can be formed by applying an adhesive composition to a base film in the same manner as the above-described method for forming a film adhesive. The method for applying the adhesive composition to the substrate 20 may be the same as the method for applying the adhesive composition to the support film.
接着シート100は、予め作製したフィルム状接着剤を用いて形成してもよい。この場合、接着シート100は、ロールラミネーター、真空ラミネーター等を用いて所定条件(例えば、室温(20℃)又は加熱状態)でラミネートすることによって形成することができる。接着シート100は、連続的に製造ができ、効率が良いことから、加熱状態でロールラミネーターを用いて形成することが好ましい。
The adhesive sheet 100 may be formed using a film adhesive prepared in advance. In this case, the adhesive sheet 100 can be formed by laminating under a predetermined condition (for example, room temperature (20 ° C.) or a heated state) using a roll laminator, a vacuum laminator, or the like. Since the adhesive sheet 100 can be continuously manufactured and has high efficiency, it is preferably formed using a roll laminator in a heated state.
フィルム状接着剤10の厚さは、半導体チップ、ワイヤ、基板の配線回路等の凹凸などの埋め込み性の観点から、20~200μm、30~200μm、又は40~150μmであってよい。フィルム状接着剤10の厚さが20μm以上であると、より充分な接着力が得られる傾向にあり、フィルム状接着剤10の厚さが200μm以下であると、経済的であり、かつ半導体装置の小型化の要求に応えることが可能となる。
The thickness of the film adhesive 10 may be 20 to 200 μm, 30 to 200 μm, or 40 to 150 μm from the viewpoint of embedding properties such as unevenness of a semiconductor chip, a wire, a wiring circuit of a substrate, and the like. When the thickness of the film adhesive 10 is 20 μm or more, a sufficient adhesive force tends to be obtained, and when the thickness of the film adhesive 10 is 200 μm or less, it is economical and the semiconductor device It is possible to meet the demand for downsizing.
図3は、他の実施形態に係る接着シートを示す模式断面図である。接着シート110は、フィルム状接着剤10の基材20とは反対側の面に積層された保護フィルム30をさらに備える。保護フィルム30は、上述の支持フィルムと同様のものであってよい。保護フィルムの厚さは、例えば、15~200μm又は70~170μmであってよい。
FIG. 3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment. The adhesive sheet 110 further includes a protective film 30 laminated on the surface of the film adhesive 10 opposite to the base 20. The protective film 30 may be the same as the above support film. The thickness of the protective film may be, for example, 15 to 200 μm or 70 to 170 μm.
[半導体装置]
図4は、一実施形態に係る半導体装置を示す模式断面図である。半導体装置200は、基板14に、第1のワイヤ88を介して1段目の第1の半導体素子Waがワイヤボンディング接続されると共に、第1の半導体素子Wa上に、第2の半導体素子Waaがフィルム状接着剤10を介して圧着されることで、第1のワイヤ88の少なくとも一部がフィルム状接着剤10に埋め込まれてなる半導体装置である。半導体装置は、第1のワイヤ88の少なくとも一部が埋め込まれてなるワイヤ埋め込み型の半導体装置であっても、第1のワイヤ88及び第1の半導体素子Waが埋め込まれてなる半導体装置であってもよい。また、半導体装置200では、基板14と第2の半導体素子Waaとがさらに第2のワイヤ98を介して電気的に接続されると共に、第2の半導体素子Waaが封止材42により封止されている。 [Semiconductor device]
FIG. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. In thesemiconductor device 200, the first semiconductor element Wa in the first stage is wire-bonded to the substrate 14 via the first wire 88, and the second semiconductor element Waa is formed on the first semiconductor element Wa. Is a semiconductor device in which at least a part of the first wire 88 is embedded in the film adhesive 10 by being pressure-bonded via the film adhesive 10. The semiconductor device is a semiconductor device in which the first wire 88 and the first semiconductor element Wa are embedded even if the semiconductor device is a wire embedded type semiconductor device in which at least a part of the first wire 88 is embedded. May be. In the semiconductor device 200, the substrate 14 and the second semiconductor element Waa are further electrically connected via the second wire 98, and the second semiconductor element Waa is sealed with the sealing material 42. ing.
図4は、一実施形態に係る半導体装置を示す模式断面図である。半導体装置200は、基板14に、第1のワイヤ88を介して1段目の第1の半導体素子Waがワイヤボンディング接続されると共に、第1の半導体素子Wa上に、第2の半導体素子Waaがフィルム状接着剤10を介して圧着されることで、第1のワイヤ88の少なくとも一部がフィルム状接着剤10に埋め込まれてなる半導体装置である。半導体装置は、第1のワイヤ88の少なくとも一部が埋め込まれてなるワイヤ埋め込み型の半導体装置であっても、第1のワイヤ88及び第1の半導体素子Waが埋め込まれてなる半導体装置であってもよい。また、半導体装置200では、基板14と第2の半導体素子Waaとがさらに第2のワイヤ98を介して電気的に接続されると共に、第2の半導体素子Waaが封止材42により封止されている。 [Semiconductor device]
FIG. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. In the
第1の半導体素子Waの厚さは、10~170μmであってもよく、第2の半導体素子Waaの厚さは、20~400μmであってもよい。フィルム状接着剤10内部に埋め込まれている第1の半導体素子Waは、半導体装置200を駆動するためのコントローラチップである。
The thickness of the first semiconductor element Wa may be 10 to 170 μm, and the thickness of the second semiconductor element Waa may be 20 to 400 μm. The first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200.
基板14は、表面に回路パターン84、94がそれぞれ二箇所ずつ形成された有機基板90からなる。第1の半導体素子Waは、回路パターン94上に接着剤41を介して圧着されている。第2の半導体素子Waaは、第1の半導体素子Waが圧着されていない回路パターン94、第1の半導体素子Wa、及び回路パターン84の一部が覆われるようにフィルム状接着剤10を介して基板14に圧着されている。基板14上の回路パターン84、94に起因する凹凸の段差には、フィルム状接着剤10が埋め込まれている。そして、樹脂製の封止材42により、第2の半導体素子Waa、回路パターン84及び第2のワイヤ98が封止されている。
The substrate 14 is composed of an organic substrate 90 having two circuit patterns 84 and 94 formed on the surface thereof. The first semiconductor element Wa is pressure-bonded onto the circuit pattern 94 via an adhesive 41. The second semiconductor element Waa is interposed via the film adhesive 10 so that the circuit pattern 94, the first semiconductor element Wa, and the circuit pattern 84 to which the first semiconductor element Wa is not bonded are covered. Crimped to the substrate 14. A film adhesive 10 is embedded in the uneven steps due to the circuit patterns 84 and 94 on the substrate 14. The second semiconductor element Waa, the circuit pattern 84, and the second wire 98 are sealed with a resin sealing material 42.
[半導体装置の製造方法]
本実施形態に係る半導体装置の製造方法は、基板上に第1のワイヤを介して第1の半導体素子を電気的に接続する第1のワイヤボンディング工程と、第2の半導体素子の片面に、上述のフィルム状接着剤を貼付するラミネート工程と、フィルム状接着剤が貼付された第2の半導体素子を、フィルム状接着剤を介して圧着することで、第1のワイヤの少なくとも一部をフィルム状接着剤に埋め込むダイボンド工程と、を備える。 [Method for Manufacturing Semiconductor Device]
In the method for manufacturing a semiconductor device according to the present embodiment, a first wire bonding step of electrically connecting a first semiconductor element on a substrate via a first wire, and a second surface of the second semiconductor element, At least a part of the first wire is film-formed by pressure-bonding the above-described laminating step for attaching the film adhesive and the second semiconductor element to which the film adhesive is attached via the film adhesive. A die-bonding step embedded in the adhesive.
本実施形態に係る半導体装置の製造方法は、基板上に第1のワイヤを介して第1の半導体素子を電気的に接続する第1のワイヤボンディング工程と、第2の半導体素子の片面に、上述のフィルム状接着剤を貼付するラミネート工程と、フィルム状接着剤が貼付された第2の半導体素子を、フィルム状接着剤を介して圧着することで、第1のワイヤの少なくとも一部をフィルム状接着剤に埋め込むダイボンド工程と、を備える。 [Method for Manufacturing Semiconductor Device]
In the method for manufacturing a semiconductor device according to the present embodiment, a first wire bonding step of electrically connecting a first semiconductor element on a substrate via a first wire, and a second surface of the second semiconductor element, At least a part of the first wire is film-formed by pressure-bonding the above-described laminating step for attaching the film adhesive and the second semiconductor element to which the film adhesive is attached via the film adhesive. A die-bonding step embedded in the adhesive.
図5~9は、一実施形態に係る半導体装置の製造方法の一連の工程を示す模式断面図である。本実施形態に係る半導体装置200は、第1のワイヤ88及び第1の半導体素子Waが埋め込まれてなる半導体装置であり、以下の手順により製造される。まず、図5に示すとおり、基板14上の回路パターン94上に、接着剤41を有する第1の半導体素子Waを圧着し、第1のワイヤ88を介して基板14上の回路パターン84と第1の半導体素子Waとを電気的にボンディング接続する(第1のワイヤボンディング工程)。
5 to 9 are schematic cross-sectional views showing a series of steps of a method for manufacturing a semiconductor device according to an embodiment. The semiconductor device 200 according to this embodiment is a semiconductor device in which a first wire 88 and a first semiconductor element Wa are embedded, and is manufactured by the following procedure. First, as shown in FIG. 5, the first semiconductor element Wa having the adhesive 41 is crimped onto the circuit pattern 94 on the substrate 14, and the circuit pattern 84 on the substrate 14 and the first pattern are connected to each other via the first wire 88. The first semiconductor element Wa is electrically bonded and connected (first wire bonding step).
次に、半導体ウェハ(例えば、厚さ100μm、サイズ:8インチ)の片面に、接着シート100をラミネートし、基材20を剥がすことによって、半導体ウェハの片面にフィルム状接着剤10(例えば、厚さ110μm)を貼り付ける。そして、フィルム状接着剤10にダイシングテープを貼り合わせた後、所定の大きさ(例えば、7.5mm角)にダイシングすることにより、図6に示すとおり、フィルム状接着剤10が貼付した第2の半導体素子Waaを得る(ラミネート工程)。
Next, the adhesive sheet 100 is laminated on one side of a semiconductor wafer (for example, thickness 100 μm, size: 8 inches), and the base material 20 is peeled off, whereby the film-like adhesive 10 (for example, thickness) is applied to one side of the semiconductor wafer. 110 μm). Then, after the dicing tape is bonded to the film adhesive 10, the dicing tape is diced to a predetermined size (for example, 7.5 mm square), whereby the second film adhesive 10 is applied as shown in FIG. The semiconductor element Waa is obtained (laminating step).
ラミネート工程の温度条件は、50~100℃又は60~80℃であってよい。ラミネート工程の温度が50℃以上であると、半導体ウェハと良好な密着性を得ることができる。ラミネート工程の温度が100℃以下であると、ラミネート工程中にフィルム状接着剤10が過度に流動することが抑えられるため、厚さの変化等を引き起こすことを防止できる。
The temperature condition of the laminating process may be 50-100 ° C or 60-80 ° C. When the temperature in the laminating step is 50 ° C. or higher, good adhesion to the semiconductor wafer can be obtained. When the temperature of the laminating process is 100 ° C. or lower, the film-like adhesive 10 can be prevented from flowing excessively during the laminating process, so that it is possible to prevent a change in thickness and the like.
ダイシング方法としては、例えば、回転刃を用いるブレードダイシング、レーザーによってフィルム状接着剤又はウェハとフィルム状接着剤の両方を切断する方法等が挙げられる。
Examples of the dicing method include blade dicing using a rotary blade, and a method of cutting a film adhesive or both a wafer and a film adhesive with a laser.
そして、フィルム状接着剤10が貼付した第2の半導体素子Waaを、第1の半導体素子Waが第1のワイヤ88を介してボンディング接続された基板14に圧着する。具体的には、図7に示すとおり、フィルム状接着剤10が貼付された第2の半導体素子Waaを、フィルム状接着剤10によって第1のワイヤ88及び第1の半導体素子Waが覆われるように載置し、次いで、図8に示すとおり、第2の半導体素子Waaを基板14に圧着させることで基板14に第2の半導体素子Waaを固定する(ダイボンド工程)。ダイボンド工程は、フィルム状接着剤10を80~180℃、0.01~0.50MPaの条件で0.5~3.0秒間圧着することが好ましい。ダイボンド工程の後、フィルム状接着剤10を60~175℃、0.3~0.7MPaの条件で、5分間以上加圧及び加熱する。
Then, the second semiconductor element Waa to which the film adhesive 10 is attached is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is bonded via the first wire 88. Specifically, as shown in FIG. 7, the first wire 88 and the first semiconductor element Wa are covered with the second semiconductor element Waa to which the film-like adhesive 10 is attached by the film-like adhesive 10. Next, as shown in FIG. 8, the second semiconductor element Waa is fixed to the substrate 14 by pressing the second semiconductor element Waa to the substrate 14 (die bonding step). In the die bonding step, the film adhesive 10 is preferably pressure-bonded for 0.5 to 3.0 seconds under conditions of 80 to 180 ° C. and 0.01 to 0.50 MPa. After the die bonding step, the film adhesive 10 is pressed and heated for 5 minutes or more under the conditions of 60 to 175 ° C. and 0.3 to 0.7 MPa.
次いで、図9に示すとおり、基板14と第2の半導体素子Waaとを第2のワイヤ98を介して電気的に接続した後(第2のワイヤボンディング工程)、回路パターン84、第2のワイヤ98及び第2の半導体素子Waaを封止材42で封止する。このような工程を経ることで半導体装置200を製造することができる。
Next, as shown in FIG. 9, after electrically connecting the substrate 14 and the second semiconductor element Waa via the second wire 98 (second wire bonding step), the circuit pattern 84, the second wire 98 and the second semiconductor element Waa are sealed with a sealing material 42. The semiconductor device 200 can be manufactured through such steps.
他の実施形態として、半導体装置は、第1のワイヤ88の少なくとも一部が埋め込まれてなるワイヤ埋め込み型の半導体装置であってもよい。
As another embodiment, the semiconductor device may be a wire embedded type semiconductor device in which at least a part of the first wire 88 is embedded.
以下、本発明について実施例を挙げてより具体的に説明する。ただし、本発明はこれら実施例に限定されるものではない。
Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples.
(実施例1~7及び比較例1~3)
<接着シートの作製>
以下に示す各成分を表1に示した配合割合(質量部)で混合し、溶媒としてシクロヘキサノンを用いて固形分40質量%の熱硬化性樹脂組成物のワニスを調製した。次に、得られたワニスを100メッシュのフィルターでろ過し、真空脱泡した。真空脱泡後のワニスを、基材フィルムとして、厚さ38μmの離型処理を施したポリエチレンテレフタレート(PET)フィルム上に塗布した。塗布したワニスを、90℃で5分間、続いて140℃で5分間の2段階で加熱乾燥した。このようにして、基材フィルム上に、半硬化(Bステージ)状態にある厚さ110μmのフィルム状接着剤を備える接着シートを得た。 (Examples 1 to 7 and Comparative Examples 1 to 3)
<Preparation of adhesive sheet>
Each component shown below was mixed at a blending ratio (parts by mass) shown in Table 1, and a varnish of a thermosetting resin composition having a solid content of 40% by mass was prepared using cyclohexanone as a solvent. Next, the obtained varnish was filtered through a 100-mesh filter and vacuum degassed. The varnish after vacuum defoaming was applied as a base film onto a polyethylene terephthalate (PET) film that had been subjected to a release treatment with a thickness of 38 μm. The applied varnish was heat-dried in two stages of 90 ° C. for 5 minutes, followed by 140 ° C. for 5 minutes. Thus, an adhesive sheet provided with a film adhesive having a thickness of 110 μm in a semi-cured (B stage) state was obtained on the base film.
<接着シートの作製>
以下に示す各成分を表1に示した配合割合(質量部)で混合し、溶媒としてシクロヘキサノンを用いて固形分40質量%の熱硬化性樹脂組成物のワニスを調製した。次に、得られたワニスを100メッシュのフィルターでろ過し、真空脱泡した。真空脱泡後のワニスを、基材フィルムとして、厚さ38μmの離型処理を施したポリエチレンテレフタレート(PET)フィルム上に塗布した。塗布したワニスを、90℃で5分間、続いて140℃で5分間の2段階で加熱乾燥した。このようにして、基材フィルム上に、半硬化(Bステージ)状態にある厚さ110μmのフィルム状接着剤を備える接着シートを得た。 (Examples 1 to 7 and Comparative Examples 1 to 3)
<Preparation of adhesive sheet>
Each component shown below was mixed at a blending ratio (parts by mass) shown in Table 1, and a varnish of a thermosetting resin composition having a solid content of 40% by mass was prepared using cyclohexanone as a solvent. Next, the obtained varnish was filtered through a 100-mesh filter and vacuum degassed. The varnish after vacuum defoaming was applied as a base film onto a polyethylene terephthalate (PET) film that had been subjected to a release treatment with a thickness of 38 μm. The applied varnish was heat-dried in two stages of 90 ° C. for 5 minutes, followed by 140 ° C. for 5 minutes. Thus, an adhesive sheet provided with a film adhesive having a thickness of 110 μm in a semi-cured (B stage) state was obtained on the base film.
なお、表1中の各成分は以下のとおりである。
In addition, each component in Table 1 is as follows.
(A)エポキシ樹脂
A-1:ジシクロペンタジエン骨格含有エポキシ樹脂、DIC株式会社製、商品名:HP-7200L、エポキシ当量:242~252g/eq
A-2:クレゾールノボラック型エポキシ樹脂、新日鉄住金化学株式会社製、商品名:YDCN-700-10、エポキシ当量:209g/eq
A-3:ビスフェノールF型エポキシ樹脂(25℃で液体)、DIC株式会社製、商品名:EXA-830CRP、エポキシ当量:159g/eq
(B)硬化剤
B-1:ビフェニルアラルキル型フェノール樹脂、エア・ウォーター株式会社製、商品名:HE-200C-10、水酸基当量:205g/eq
B-2:フェニルアラルキル型フェノール樹脂、エア・ウォーター株式会社製、商品名:HE100C-30、水酸基当量:175g/eq
(C)第1のエラストマ(カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有するエラストマ)
C-1:アクリルゴム、ナガセケムテックス株式会社製、商品名:WS-023 EK30、重量平均分子量:50万、酸価:20mgKOH/g、Tg:-10℃
C-2:アクリルゴム、ナガセケムテックス株式会社製、商品名:SG-708-6、重量平均分子量:70万、酸価:9mgKOH/g、Tg:4℃
C-3:アクリルゴム、ナガセケムテックス株式会社製、商品名:SG-280 EK23、重量平均分子量:90万、酸価:30mgKOH/g、Tg:-29℃
(D)第2のエラストマ(カルボキシ基及び水酸基を有しないエラストマ)
D-1:アクリルゴム、ナガセケムテックス株式会社製、商品名:HTR-860P-3CSP、重量平均分子量:80万、グリシジル基含有モノマー比率:3%、Tg:-7℃
D-2:アクリルゴム、ナガセケムテックス株式会社製、商品名:HTR-860P-30B-CHN、重量平均分子量:23万、グリシジル基含有モノマー比率:8%、Tg:-7℃
D-3:アクリルゴム、ナガセケムテックス株式会社製、HTR-860P-3CSP改良品(商品名:HTR-860P-3CSP、ナガセケムテックス株式会社製のアクリルゴムにおいて、アクリルニトリルに由来する構成単位を除いたもの)、重量平均分子量:60万、Tg:12℃
(E)無機フィラー
E-1:シリカフィラー分散液、溶融シリカ、株式会社アドマテックス製、商品名:SC2050-HLG、平均粒径:0.50μm
(F)硬化促進剤
F-1:1-シアノエチル-2-フェニルイミダゾール、四国化成工業株式会社製、商品名:キュアゾール2PZ-CN (A) Epoxy resin A-1: Dicyclopentadiene skeleton-containing epoxy resin, manufactured by DIC Corporation, trade name: HP-7200L, epoxy equivalent: 242 to 252 g / eq
A-2: Cresol novolac type epoxy resin, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent: 209 g / eq
A-3: Bisphenol F type epoxy resin (liquid at 25 ° C.), manufactured by DIC Corporation, trade name: EXA-830CRP, epoxy equivalent: 159 g / eq
(B) Curing agent B-1: Biphenyl aralkyl type phenol resin, manufactured by Air Water Co., Ltd., trade name: HE-200C-10, hydroxyl group equivalent: 205 g / eq
B-2: Phenylaralkyl type phenol resin, manufactured by Air Water Co., Ltd., trade name: HE100C-30, hydroxyl group equivalent: 175 g / eq
(C) First elastomer (elastomer having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group)
C-1: Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: WS-023 EK30, weight average molecular weight: 500,000, acid value: 20 mgKOH / g, Tg: −10 ° C.
C-2: Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: SG-708-6, weight average molecular weight: 700,000, acid value: 9 mgKOH / g, Tg: 4 ° C.
C-3: Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: SG-280 EK23, weight average molecular weight: 900,000, acid value: 30 mgKOH / g, Tg: -29 ° C
(D) Second elastomer (an elastomer having no carboxy group and no hydroxyl group)
D-1: Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: HTR-860P-3CSP, weight average molecular weight: 800,000, glycidyl group-containing monomer ratio: 3%, Tg: −7 ° C.
D-2: Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: HTR-860P-30B-CHN, weight average molecular weight: 230,000, glycidyl group-containing monomer ratio: 8%, Tg: −7 ° C.
D-3: Acrylic rubber, manufactured by Nagase ChemteX Corporation, improved HTR-860P-3CSP (trade name: HTR-860P-3CSP, an acrylic rubber manufactured by Nagase ChemteX Corporation, a structural unit derived from acrylonitrile) Excluded), weight average molecular weight: 600,000, Tg: 12 ° C.
(E) Inorganic filler E-1: Silica filler dispersion, fused silica, manufactured by Admatechs Co., Ltd., trade name: SC2050-HLG, average particle size: 0.50 μm
(F) Curing accelerator F-1: 1-cyanoethyl-2-phenylimidazole, manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name: Curesol 2PZ-CN
A-1:ジシクロペンタジエン骨格含有エポキシ樹脂、DIC株式会社製、商品名:HP-7200L、エポキシ当量:242~252g/eq
A-2:クレゾールノボラック型エポキシ樹脂、新日鉄住金化学株式会社製、商品名:YDCN-700-10、エポキシ当量:209g/eq
A-3:ビスフェノールF型エポキシ樹脂(25℃で液体)、DIC株式会社製、商品名:EXA-830CRP、エポキシ当量:159g/eq
(B)硬化剤
B-1:ビフェニルアラルキル型フェノール樹脂、エア・ウォーター株式会社製、商品名:HE-200C-10、水酸基当量:205g/eq
B-2:フェニルアラルキル型フェノール樹脂、エア・ウォーター株式会社製、商品名:HE100C-30、水酸基当量:175g/eq
(C)第1のエラストマ(カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有するエラストマ)
C-1:アクリルゴム、ナガセケムテックス株式会社製、商品名:WS-023 EK30、重量平均分子量:50万、酸価:20mgKOH/g、Tg:-10℃
C-2:アクリルゴム、ナガセケムテックス株式会社製、商品名:SG-708-6、重量平均分子量:70万、酸価:9mgKOH/g、Tg:4℃
C-3:アクリルゴム、ナガセケムテックス株式会社製、商品名:SG-280 EK23、重量平均分子量:90万、酸価:30mgKOH/g、Tg:-29℃
(D)第2のエラストマ(カルボキシ基及び水酸基を有しないエラストマ)
D-1:アクリルゴム、ナガセケムテックス株式会社製、商品名:HTR-860P-3CSP、重量平均分子量:80万、グリシジル基含有モノマー比率:3%、Tg:-7℃
D-2:アクリルゴム、ナガセケムテックス株式会社製、商品名:HTR-860P-30B-CHN、重量平均分子量:23万、グリシジル基含有モノマー比率:8%、Tg:-7℃
D-3:アクリルゴム、ナガセケムテックス株式会社製、HTR-860P-3CSP改良品(商品名:HTR-860P-3CSP、ナガセケムテックス株式会社製のアクリルゴムにおいて、アクリルニトリルに由来する構成単位を除いたもの)、重量平均分子量:60万、Tg:12℃
(E)無機フィラー
E-1:シリカフィラー分散液、溶融シリカ、株式会社アドマテックス製、商品名:SC2050-HLG、平均粒径:0.50μm
(F)硬化促進剤
F-1:1-シアノエチル-2-フェニルイミダゾール、四国化成工業株式会社製、商品名:キュアゾール2PZ-CN (A) Epoxy resin A-1: Dicyclopentadiene skeleton-containing epoxy resin, manufactured by DIC Corporation, trade name: HP-7200L, epoxy equivalent: 242 to 252 g / eq
A-2: Cresol novolac type epoxy resin, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent: 209 g / eq
A-3: Bisphenol F type epoxy resin (liquid at 25 ° C.), manufactured by DIC Corporation, trade name: EXA-830CRP, epoxy equivalent: 159 g / eq
(B) Curing agent B-1: Biphenyl aralkyl type phenol resin, manufactured by Air Water Co., Ltd., trade name: HE-200C-10, hydroxyl group equivalent: 205 g / eq
B-2: Phenylaralkyl type phenol resin, manufactured by Air Water Co., Ltd., trade name: HE100C-30, hydroxyl group equivalent: 175 g / eq
(C) First elastomer (elastomer having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group)
C-1: Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: WS-023 EK30, weight average molecular weight: 500,000, acid value: 20 mgKOH / g, Tg: −10 ° C.
C-2: Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: SG-708-6, weight average molecular weight: 700,000, acid value: 9 mgKOH / g, Tg: 4 ° C.
C-3: Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: SG-280 EK23, weight average molecular weight: 900,000, acid value: 30 mgKOH / g, Tg: -29 ° C
(D) Second elastomer (an elastomer having no carboxy group and no hydroxyl group)
D-1: Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: HTR-860P-3CSP, weight average molecular weight: 800,000, glycidyl group-containing monomer ratio: 3%, Tg: −7 ° C.
D-2: Acrylic rubber, manufactured by Nagase ChemteX Corporation, trade name: HTR-860P-30B-CHN, weight average molecular weight: 230,000, glycidyl group-containing monomer ratio: 8%, Tg: −7 ° C.
D-3: Acrylic rubber, manufactured by Nagase ChemteX Corporation, improved HTR-860P-3CSP (trade name: HTR-860P-3CSP, an acrylic rubber manufactured by Nagase ChemteX Corporation, a structural unit derived from acrylonitrile) Excluded), weight average molecular weight: 600,000, Tg: 12 ° C.
(E) Inorganic filler E-1: Silica filler dispersion, fused silica, manufactured by Admatechs Co., Ltd., trade name: SC2050-HLG, average particle size: 0.50 μm
(F) Curing accelerator F-1: 1-cyanoethyl-2-phenylimidazole, manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name: Curesol 2PZ-CN
<各種物性の評価>
得られた実施例1~7及び比較例1~3の接着シートについて、埋め込み性及びブリード量の評価を行った。 <Evaluation of various physical properties>
The obtained adhesive sheets of Examples 1 to 7 and Comparative Examples 1 to 3 were evaluated for embedding property and bleed amount.
得られた実施例1~7及び比較例1~3の接着シートについて、埋め込み性及びブリード量の評価を行った。 <Evaluation of various physical properties>
The obtained adhesive sheets of Examples 1 to 7 and Comparative Examples 1 to 3 were evaluated for embedding property and bleed amount.
[埋め込み性評価]
接着シートの埋め込み性を以下の評価サンプルを作製して評価した。上記で得られたフィルム状接着剤(厚さ110μm)を、基材フィルムを剥がし、ダイシングテープに貼り付け、ダイシングダイボンディング一体型接着シートを得た。次に、厚さ100μmの半導体ウェハ(8インチ)を、接着剤側に70℃に加熱して貼り付けた。その後、この半導体ウェハを7.5mm角にダイシングすることによって、半導体チップAを得た。次に、ダイシングダイボンディング一体型接着シート(日立化成株式会社、商品名:HR9004-10)(厚さ10μm)を用意し、厚さ50μmの半導体ウェハ(8インチ)に70℃に加熱して貼り付けた。その後、この半導体ウェハを4.5mm角にダイシングすることによって、ダイボンディングフィルム付きの半導体チップBを得た。次いで、ソルダーレジスト(太陽日酸株式会社、商品名:AUS308)を塗布した総厚さ260μmの評価用基板を用意し、ダイボンディングフィルム付きの半導体チップBのダイボンディングフィルムと評価用基板のソルダーレジストとが接するように、120℃、0.20MPa、2秒間の条件で圧着した。その後、半導体チップAのフィルム状接着剤と半導体チップBの半導体ウェハとが接するように、120℃、0.20MPa、1.5秒間の条件で圧着し、評価サンプルを得た。この際、先に圧着している半導体チップBが半導体チップAの中央となるように位置合わせを行った。このようにして得られた評価サンプルを超音波デジタル画像診断装置(インサイト株式会社製、プローブ:75MHz)にてボイドの観測の有無を観測し、ボイドが観測された場合は、単位面積あたりのボイドの面積の割合を算出し、これらの分析結果を埋め込み性として評価した。評価基準は、以下のとおりである。結果を表1に示す。
A:ボイドが観測されなかった。
B:ボイドが観測されたが、その割合が5面積%未満であった。
C:ボイドが観測され、その割合が5面積%以上であった。 [Embeddability evaluation]
The following evaluation samples were prepared and evaluated for the embedding property of the adhesive sheet. The film-like adhesive (thickness: 110 μm) obtained above was peeled off from the base film and attached to a dicing tape to obtain a dicing die bonding integrated adhesive sheet. Next, a semiconductor wafer (8 inches) having a thickness of 100 μm was attached to the adhesive side by heating to 70 ° C. Then, the semiconductor chip A was obtained by dicing this semiconductor wafer into 7.5 mm square. Next, a dicing die bonding integrated adhesive sheet (Hitachi Chemical Co., Ltd., trade name: HR9004-10) (thickness 10 μm) is prepared and heated to 70 ° C. and attached to a semiconductor wafer (8 inches) having a thickness of 50 μm. I attached. Thereafter, this semiconductor wafer was diced to 4.5 mm square to obtain a semiconductor chip B with a die bonding film. Next, an evaluation substrate having a total thickness of 260 μm coated with a solder resist (Taiyo Nisso Corporation, trade name: AUS308) was prepared, and the die bonding film of the semiconductor chip B with the die bonding film and the solder resist of the evaluation substrate Were pressed under the conditions of 120 ° C., 0.20 MPa, and 2 seconds. Thereafter, the film adhesive of the semiconductor chip A and the semiconductor wafer of the semiconductor chip B were pressure-bonded under the conditions of 120 ° C., 0.20 MPa, and 1.5 seconds to obtain an evaluation sample. At this time, alignment was performed so that the semiconductor chip B that was previously crimped was in the center of the semiconductor chip A. The evaluation sample thus obtained was observed for the presence or absence of observation of voids with an ultrasonic digital diagnostic imaging apparatus (Insight Inc., probe: 75 MHz), and when voids were observed, The ratio of the void area was calculated, and these analysis results were evaluated as embeddability. The evaluation criteria are as follows. The results are shown in Table 1.
A: No void was observed.
B: Although voids were observed, the ratio was less than 5 area%.
C: A void was observed, and the ratio was 5 area% or more.
接着シートの埋め込み性を以下の評価サンプルを作製して評価した。上記で得られたフィルム状接着剤(厚さ110μm)を、基材フィルムを剥がし、ダイシングテープに貼り付け、ダイシングダイボンディング一体型接着シートを得た。次に、厚さ100μmの半導体ウェハ(8インチ)を、接着剤側に70℃に加熱して貼り付けた。その後、この半導体ウェハを7.5mm角にダイシングすることによって、半導体チップAを得た。次に、ダイシングダイボンディング一体型接着シート(日立化成株式会社、商品名:HR9004-10)(厚さ10μm)を用意し、厚さ50μmの半導体ウェハ(8インチ)に70℃に加熱して貼り付けた。その後、この半導体ウェハを4.5mm角にダイシングすることによって、ダイボンディングフィルム付きの半導体チップBを得た。次いで、ソルダーレジスト(太陽日酸株式会社、商品名:AUS308)を塗布した総厚さ260μmの評価用基板を用意し、ダイボンディングフィルム付きの半導体チップBのダイボンディングフィルムと評価用基板のソルダーレジストとが接するように、120℃、0.20MPa、2秒間の条件で圧着した。その後、半導体チップAのフィルム状接着剤と半導体チップBの半導体ウェハとが接するように、120℃、0.20MPa、1.5秒間の条件で圧着し、評価サンプルを得た。この際、先に圧着している半導体チップBが半導体チップAの中央となるように位置合わせを行った。このようにして得られた評価サンプルを超音波デジタル画像診断装置(インサイト株式会社製、プローブ:75MHz)にてボイドの観測の有無を観測し、ボイドが観測された場合は、単位面積あたりのボイドの面積の割合を算出し、これらの分析結果を埋め込み性として評価した。評価基準は、以下のとおりである。結果を表1に示す。
A:ボイドが観測されなかった。
B:ボイドが観測されたが、その割合が5面積%未満であった。
C:ボイドが観測され、その割合が5面積%以上であった。 [Embeddability evaluation]
The following evaluation samples were prepared and evaluated for the embedding property of the adhesive sheet. The film-like adhesive (thickness: 110 μm) obtained above was peeled off from the base film and attached to a dicing tape to obtain a dicing die bonding integrated adhesive sheet. Next, a semiconductor wafer (8 inches) having a thickness of 100 μm was attached to the adhesive side by heating to 70 ° C. Then, the semiconductor chip A was obtained by dicing this semiconductor wafer into 7.5 mm square. Next, a dicing die bonding integrated adhesive sheet (Hitachi Chemical Co., Ltd., trade name: HR9004-10) (
A: No void was observed.
B: Although voids were observed, the ratio was less than 5 area%.
C: A void was observed, and the ratio was 5 area% or more.
[ブリード量評価]
上記埋め込み性評価で「A」又は「B」評価であったものについてのみ、ブリード量評価を行った。上記埋め込み性評価で作製した評価サンプルと同様の手順で、評価サンプルを作製した。半導体チップAのフィルム状接着剤と半導体チップBの半導体ウェハとを、120℃、0.20MPa、1.5秒間の条件で圧着した。次いで、加圧オーブンを用いて、140℃、0.7MPa、30分の条件で高温加圧処理(加圧キュア)を行い、加圧キュア前後において、評価サンプルを顕微鏡で観察し、評価サンプルの4辺の中心から、フィルム状接着剤のブリード量(はみ出し量)をそれぞれ測定した。加圧キュア前のブリード量をL1、加圧キュア後のブリード量をL2とし、以下の式に基づき、ブリード量増加率を算出した。結果を表1に示す。
ブリード量増加率(%)=(L2-L1)/L1×100 [Bleed amount evaluation]
The bleed amount evaluation was carried out only for the evaluation of “A” or “B” in the embeddability evaluation. An evaluation sample was produced in the same procedure as the evaluation sample produced by the above embeddability evaluation. The film adhesive of the semiconductor chip A and the semiconductor wafer of the semiconductor chip B were pressure-bonded under the conditions of 120 ° C., 0.20 MPa, and 1.5 seconds. Next, using a pressure oven, high-temperature pressure treatment (pressure cure) is performed under conditions of 140 ° C., 0.7 MPa, 30 minutes, and the evaluation sample is observed with a microscope before and after the pressure cure. From the center of the four sides, the bleed amount (the amount of protrusion) of the film adhesive was measured. The bleed amount before pressure curing was L1, the bleed amount after pressure curing was L2, and the bleed amount increase rate was calculated based on the following formula. The results are shown in Table 1.
Bleed amount increase rate (%) = (L2-L1) / L1 × 100
上記埋め込み性評価で「A」又は「B」評価であったものについてのみ、ブリード量評価を行った。上記埋め込み性評価で作製した評価サンプルと同様の手順で、評価サンプルを作製した。半導体チップAのフィルム状接着剤と半導体チップBの半導体ウェハとを、120℃、0.20MPa、1.5秒間の条件で圧着した。次いで、加圧オーブンを用いて、140℃、0.7MPa、30分の条件で高温加圧処理(加圧キュア)を行い、加圧キュア前後において、評価サンプルを顕微鏡で観察し、評価サンプルの4辺の中心から、フィルム状接着剤のブリード量(はみ出し量)をそれぞれ測定した。加圧キュア前のブリード量をL1、加圧キュア後のブリード量をL2とし、以下の式に基づき、ブリード量増加率を算出した。結果を表1に示す。
ブリード量増加率(%)=(L2-L1)/L1×100 [Bleed amount evaluation]
The bleed amount evaluation was carried out only for the evaluation of “A” or “B” in the embeddability evaluation. An evaluation sample was produced in the same procedure as the evaluation sample produced by the above embeddability evaluation. The film adhesive of the semiconductor chip A and the semiconductor wafer of the semiconductor chip B were pressure-bonded under the conditions of 120 ° C., 0.20 MPa, and 1.5 seconds. Next, using a pressure oven, high-temperature pressure treatment (pressure cure) is performed under conditions of 140 ° C., 0.7 MPa, 30 minutes, and the evaluation sample is observed with a microscope before and after the pressure cure. From the center of the four sides, the bleed amount (the amount of protrusion) of the film adhesive was measured. The bleed amount before pressure curing was L1, the bleed amount after pressure curing was L2, and the bleed amount increase rate was calculated based on the following formula. The results are shown in Table 1.
Bleed amount increase rate (%) = (L2-L1) / L1 × 100
表1に示すとおり、第1のエラストマ及び第2のエラストマを含有する実施例1~7は、第1のエラストマ又は第2のエラストマのいずれか一方しかを含有しない比較例1~3に比べて、埋め込み性に優れ、高温加圧処理時のブリード量増加率も低かった。これらの結果から、本発明に係る熱硬化性樹脂組成物が、熱圧着時に良好な埋め込み性を有しつつ、高温加圧処理時のブリード量の増加を抑制することが可能であることが確認された。
As shown in Table 1, Examples 1 to 7 containing the first elastomer and the second elastomer are compared with Comparative Examples 1 to 3 containing only one of the first elastomer and the second elastomer. Excellent embeddability, and the rate of increase in bleed amount during high-temperature pressure treatment was also low. From these results, it is confirmed that the thermosetting resin composition according to the present invention can suppress an increase in the amount of bleed during high-temperature pressure treatment while having good embedding property during thermocompression bonding. It was done.
以上の結果のとおり、本発明に係る熱硬化性樹脂組成物は、熱圧着時に良好な埋め込み性を有しつつ、高温加圧処理時のブリード量の増加を抑制できることから、熱硬化性樹脂組成物をフィルム状に形成してなるフィルム状接着剤は、チップ埋め込み型フィルム状接着剤であるFOD(Film Over Die)又はワイヤ埋め込み型フィルム状接着剤であるFOW(Film Over Wire)として有用となり得る。
As described above, the thermosetting resin composition according to the present invention has a good embedding property at the time of thermocompression bonding, and can suppress an increase in the amount of bleed at the time of high-temperature pressure treatment. A film-like adhesive formed by forming a product into a film can be useful as a chip-embedded film-like adhesive FOD (Film Over Die) or a wire-embedded film-like adhesive FOW (Film Over Wire) .
10…フィルム状接着剤、14…基板、20…基材、30…保護フィルム、41…接着剤、42…封止材、84、94…回路パターン、88…第1のワイヤ、90…有機基板、98…第2のワイヤ、100、110…接着シート、200…半導体装置、Wa…第1の半導体素子、Waa…第2の半導体素子。
DESCRIPTION OF SYMBOLS 10 ... Film adhesive, 14 ... Substrate, 20 ... Base material, 30 ... Protective film, 41 ... Adhesive, 42 ... Sealing material, 84, 94 ... Circuit pattern, 88 ... First wire, 90 ... Organic substrate 98, second wire, 100, 110, adhesive sheet, 200, semiconductor device, Wa, first semiconductor element, Waa, second semiconductor element.
Claims (12)
- エポキシ樹脂と、
硬化剤と、
重量平均分子量が20万~130万であり、カルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有する第1のエラストマと、
重量平均分子量が20万~130万であり、カルボキシ基及び水酸基を有しない第2のエラストマと、
を含有し、
前記第1のエラストマ及び前記第2のエラストマの合計の含有量が、熱硬化性樹脂組成物全量を基準として、40質量%以下である、熱硬化性樹脂組成物。 Epoxy resin,
A curing agent;
A first elastomer having a weight average molecular weight of 200,000 to 1,300,000 and having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group;
A second elastomer having a weight average molecular weight of 200,000 to 1.3 million and having no carboxy group and no hydroxyl group;
Containing
The thermosetting resin composition whose total content of said 1st elastomer and said 2nd elastomer is 40 mass% or less on the basis of the thermosetting resin composition whole quantity. - 前記硬化剤がフェノール樹脂を含む、請求項1に記載の熱硬化性樹脂組成物。 The thermosetting resin composition according to claim 1, wherein the curing agent includes a phenol resin.
- 前記第1のエラストマがカルボキシ基及び水酸基からなる群より選ばれる少なくとも1種の官能基を有するアクリル樹脂である、請求項1又は2に記載の熱硬化性樹脂組成物。 The thermosetting resin composition according to claim 1 or 2, wherein the first elastomer is an acrylic resin having at least one functional group selected from the group consisting of a carboxy group and a hydroxyl group.
- 前記第2のエラストマがカルボキシ基及び水酸基を有しないアクリル樹脂である、請求項1~3のいずれか一項に記載の熱硬化性樹脂組成物。 The thermosetting resin composition according to any one of claims 1 to 3, wherein the second elastomer is an acrylic resin having no carboxy group and no hydroxyl group.
- 前記エポキシ樹脂が25℃で液体のエポキシ樹脂を含む、請求項1~4のいずれか一項に記載の熱硬化性樹脂組成物。 The thermosetting resin composition according to any one of claims 1 to 4, wherein the epoxy resin contains an epoxy resin that is liquid at 25 ° C.
- 無機フィラーをさらに含有する、請求項1~5のいずれか一項に記載の熱硬化性樹脂組成物。 The thermosetting resin composition according to any one of claims 1 to 5, further comprising an inorganic filler.
- 硬化促進剤をさらに含有する、請求項1~6のいずれか一項に記載の熱硬化性樹脂組成物。 The thermosetting resin composition according to any one of claims 1 to 6, further comprising a curing accelerator.
- 請求項1~7のいずれか一項に記載の熱硬化性樹脂組成物をフィルム状に形成してなる、フィルム状接着剤。 A film adhesive formed by forming the thermosetting resin composition according to any one of claims 1 to 7 into a film.
- 基材と、
前記基材上に設けられた、請求項8に記載のフィルム状接着剤と、
を備える、接着シート。 A substrate;
The film adhesive according to claim 8 provided on the substrate;
An adhesive sheet comprising: - 前記基材がダイシングテープである、請求項9に記載の接着シート。 The adhesive sheet according to claim 9, wherein the substrate is a dicing tape.
- 前記フィルム状接着剤の前記基材とは反対側の面に積層された保護フィルムをさらに備える、請求項9又は10に記載の接着シート。 The adhesive sheet according to claim 9 or 10, further comprising a protective film laminated on a surface of the film adhesive opposite to the substrate.
- 基板上に第1のワイヤを介して第1の半導体素子を電気的に接続するワイヤボンディング工程と、
第2の半導体素子の片面に、請求項8に記載のフィルム状接着剤を貼付するラミネート工程と、
前記フィルム状接着剤が貼付された第2の半導体素子を、前記フィルム状接着剤を介して圧着することで、前記第1のワイヤの少なくとも一部を前記フィルム状接着剤に埋め込むダイボンド工程と、
を備える、半導体装置の製造方法。 A wire bonding step of electrically connecting the first semiconductor element on the substrate via the first wire;
A laminating step of applying the film adhesive according to claim 8 on one side of the second semiconductor element;
A die bonding step of embedding at least a part of the first wire in the film adhesive by crimping the second semiconductor element to which the film adhesive is affixed via the film adhesive;
A method for manufacturing a semiconductor device.
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KR1020207021944A KR102561428B1 (en) | 2018-01-30 | 2019-01-18 | Method for producing thermosetting resin composition, film adhesive, adhesive sheet and semiconductor device |
CN201980009495.5A CN111630643B (en) | 2018-01-30 | 2019-01-18 | Thermosetting resin composition, film-like adhesive, adhesive sheet, and method for producing semiconductor device |
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