JP2001294843A - Adhesive composition for semiconductor apparatus, adhesive sheet for semiconductor apparatus using the same, and semiconductor apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To industrially produce a new adhesive composition for semiconductor apparatus having excellent processability, bond strength, wire bonding properties, heat cycle reliability and reflow resistance, an adhesive sheet for semiconductor apparatus using the same, and a semiconductor apparatus, and to improve the reliability of the semiconductor apparatus and the economic efficiency based on ready processability. SOLUTION: This adhesive composition for semiconductor apparatus is characterized in that the adhesive composition forms (B) the adhesive layer of the semiconductor apparatus having a structure obtained by laminating (A) a circuit board layer composed of an insulator layer and a conductor pattern, (B) the adhesive layer and (C) a semiconductor integrated circuit in this order and connecting the (C) the semiconductor integrated circuit to (A) the circuit board layer by wire bonding. The adhesive composition comprises at least one kind of a thermoplastic resin and at least one kind of a thermosetting resin as essential components, the adhesive composition after heating and curing has at least one softening point in the temperature range of -65 deg.C to 50 deg.C and a modulus of elasticity E' at a temperature of 100 deg.C to 150 deg.C is 1 MPa<=E'<=500 MPa. This adhesive sheet for the semiconductor apparatus uses the adhesive composition. This semiconductor apparatus uses the adhesive composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulator for connecting a semiconductor integrated circuit to a semiconductor integrated circuit connecting substrate (interposer) when the semiconductor integrated circuit is connected and packaged by a wire bonding method. Composition having a function of bonding a semiconductor integrated circuit to a wiring board layer composed of layers and conductor patterns, and having a function of relieving thermal stress generated between the layers due to a temperature difference, and an adhesive sheet for a semiconductor device using the same And a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor integrated circuit (IC) package, a dual in-line package (DIP),
Package forms such as a small outline package (SOP) and a quad flat package (QFP) have been used. However, with the increase in the number of pins of the IC and the miniaturization of the package, the limit of the QFP that can increase the number of pins is approaching its limit. This is due to the difficulty in maintaining the flatness of the leads and the difficulty in obtaining solder printing accuracy on the printed circuit board, particularly when mounting on a printed circuit board.
Therefore, in recent years, BGA method, LGA method, PGA method and the like have been put to practical use as means for increasing the number of pins and reducing the size.
Above all, the BGA method has attracted attention because of its low cost, light weight, and thinness due to the use of plastic materials.

FIG. 1 shows an example of the BGA system. The BGA method is characterized in that solder balls almost corresponding to the number of pins of an IC are provided on a grid (grid array) as external connection portions of a semiconductor integrated circuit connection substrate to which the IC is connected. The connection to the printed circuit board is performed by placing the solder ball surface on the conductor pattern of the printed circuit board on which the solder is already printed so as to match the conductor pattern, and melting the solder by reflow. The greatest feature is that since the surface of the interposer can be used, more terminals can be arranged in a smaller space as compared with a package such as QFP which can use only the peripheral side. In addition to this miniaturization function,
There are chip scale packages (CSP), micro BGA (μ-BGA), fine pitch BGA (FP-
BGA), memory BGA (m-BGA), board-on-chip (BOC) and the like have been proposed. μ-BG
A is characterized in that a beam lead is taken out from the interposer and connected to the IC. In the m-BGA, BOC (FIG. 1) and FP-BGA, the IC and the interposer are connected by wire bonding. Wire bonding connection is difficult to cope with fine pitches, but does not require complicated beam lead processing and can use a conventional wire bonder for a lead frame, which is advantageous in cost.

On the other hand, BGA of the wire bonding type
The (CSP) package has the following problems.
(A) An adhesive for bonding the IC and the interposer is required. (B) The adhesive of (a) needs to have appropriate hardness for wire bonding. (C) On the other hand, at the same time, (a) requires flexibility to relieve the thermal stress applied to the solder balls during a temperature cycle or reflow. (D) High reflow resistance is required because the number of reflows is large. These are contradictory characteristics, and in particular, it is difficult to achieve both (b) and (c).
Generally, emphasis is placed on flexibility, using a soft adhesive,
The thickness of the copper foil used as the conductor and the thickness of the nickel plating on the conductor are optimized to improve wire bonding. In particular, in a CSP using a TAB tape or a flexible printed circuit board as an interposer, since the IC size interposer size is almost equal, the influence of stress at the time of a temperature cycle is large, and the above problem is important.

From such a viewpoint, a thermoplastic resin having a low elastic modulus or a silicone elastomer (Japanese Patent Publication No. 6-50448) has conventionally been proposed as an adhesive layer.

[0006]

However, in the conventional adhesive composition, wire bonding property, temperature cycle property,
Sufficient characteristics were not always obtained in reflow resistance. For example, an adhesive composition composed of a thermoplastic resin has the advantage that heating cure is unnecessary if the initial adhesive strength can be secured, but if it is designed to have a high softening point to withstand wire bonding and solder reflow, High heating exceeding the softening point of the resin in the joining process,
There is a problem that pressurization is required. On the other hand, an adhesive sheet made of a thermosetting resin has strength enough to withstand wire bonding and solder reflow, but is inflexible and inferior in temperature reflow property. In addition, a slight increase in viscosity due to the progress of the curing reaction may cause a defect due to displacement.

The present invention solves such problems and provides a novel adhesive composition for semiconductor devices excellent in wire bonding properties, temperature cycling properties, and reflow resistance, an adhesive sheet for semiconductor devices using the same, and an adhesive sheet for semiconductor devices using the same. It is an object to provide a semiconductor device.

[0008]

That is, the present invention provides:
(A) a wiring board layer composed of an insulator layer and a conductor pattern, (B) an adhesive layer, and (C) a semiconductor integrated circuit are stacked in this order, and (C) the semiconductor integrated circuit and (A) the wiring board layer are wire-bonded. (B) an adhesive composition for a semiconductor device forming an adhesive layer of a semiconductor device having a structure connected by the method, wherein the adhesive composition comprises at least a thermoplastic resin and a thermosetting resin as essential components, respectively. One or more types, and the adhesive composition after heat curing is -65 ° C to 50 ° C
At least one softening point in the temperature range of, and the elastic modulus E ′ at 100 ° C. to 150 ° C. is 1 MPa ≦
An adhesive composition for a semiconductor device, wherein E ′ ≦ 500 MPa, an adhesive sheet for a semiconductor device using the same, and a semiconductor device.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have conducted intensive studies on the softening behavior and elasticity characteristics of an adhesive component of a semiconductor device adhesive composition after curing in order to achieve the above object.
By controlling the mixing state of thermoplastic resin and thermosetting resin, and by skillfully combining the curing agent of thermosetting resin,
It has been found that an adhesive composition for a semiconductor device suitable for a substrate for connecting a semiconductor integrated circuit, which has excellent wire bonding properties, temperature cycle properties, and excellent reflow resistance, can be obtained.
This has led to the present invention.

[0010] The semiconductor device of the present invention is characterized in that (C) after an element is formed on a semiconductor substrate such as silicon, a separated semiconductor integrated circuit (bare chip) is (A) a wiring comprising an insulator layer and a conductor pattern. If it has a structure in which (B) the adhesive layer of the present invention is adhered to the substrate layer and (C) the semiconductor integrated circuit and (A) the wiring substrate layer are connected by wire bonding, the shape, material and The production method is not particularly limited.

(A) is a layer having a conductor pattern for connecting bare chip electrode pads to the outside of the package (printed circuit board, TAB tape, etc.). The conductor pattern is formed on one or both sides of the insulator layer. Is what it is. The insulator layer here is made of a composite material such as a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate, or an epoxy resin impregnated glass cloth.
A flexible insulating film having a thickness of 10 to 125 μm, a ceramic substrate of alumina, zirconia, soda glass, quartz glass, or the like is suitable, and a plurality of layers selected from these may be laminated and used. Also, if necessary,
The insulator layer can be subjected to a surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical roughening, and easy adhesion coating treatment.

The formation of the conductor pattern is generally performed by either the subtractive method or the additive method, but any of them may be used in the present invention. In the subtractive method, a metal plate such as a copper foil is adhered to the insulator layer with an insulating adhesive (the adhesive composition of the present invention can also be used), or the metal plate is provided with the insulator layer. A pattern is formed by stacking precursors and etching a material prepared by a method of forming an insulator layer by heat treatment or the like by a chemical solution treatment. Specific examples of the material here include a copper-clad material for a rigid or flexible printed circuit board and a TAB tape. on the other hand,
In the additive method, a conductor pattern is directly formed on the insulator layer by electroless plating, electrolytic plating, sputtering, or the like. In any case, the formed conductor may be plated with a metal having high corrosion resistance to prevent corrosion. Via holes may be formed in the wiring board layer (A) formed as described above, if necessary, and the conductor patterns formed on both sides by plating may be connected by plating.

(B) is an adhesive layer mainly used for bonding (A) and (C). However, the use of (A) for bonding other members (for example, an IC and a heat sink) is not limited at all. This adhesive layer is usually laminated in a semi-cured state on a semiconductor integrated circuit connection substrate. Before or after lamination, a pre-curing reaction is performed at a temperature of 30 to 200 ° C. for an appropriate time to reduce the degree of curing. Can be adjusted. The adhesive layer is formed from the adhesive composition for a semiconductor device of the present invention (hereinafter referred to as an adhesive composition), and the adhesive composition is heated to a temperature in the range of -65 ° C to 50 ° C, preferably At least 1 in the temperature range of 0 ° C to 50 ° C
Having two softening points and an elastic modulus E ′ at 100 ° C. to 150 ° C. of 1 MPa ≦ E ′ ≦ 500 MPa, preferably 5 MPa ≦ E ′ ≦ 100 MPa, more preferably 8 MPa
MPa ≦ E ′ ≦ 80 MPa. The softening point referred to in the present invention is tan δ (= E ″ /
Defined by the peak temperature of E '). Although the elastic moduli E ′ and E ″ slightly vary depending on the measurement conditions, the frequencies 11 to 35H
z, a temperature rising rate of 2 to 5 ° C./min is used.

A substance having a softening point lower than -65 ° C. is difficult to maintain in a solid form, and is not practical. 50 ℃
Larger values are not preferred because they are inferior in heat cycle properties. On the other hand, if the elastic modulus E ′ at 100 ° C. to 150 ° C. is smaller than 1 MPa, the wire bonding property and the reflow resistance deteriorate, which is not preferable. When E ′ is larger than 100 MPa, the thermal cycling property is undesirably reduced.
This is because the standard condition for wire bonding to an organic material wiring substrate such as a TAB tape is 100 to 150 ° C., and therefore, it is desirable that the elastic modulus E ′ in this region is high. On the other hand, if E ′ is too high, it is difficult to alleviate the stress during the thermal cycle, and it is an effective means to optimize it as in the present invention.

The adhesive composition of the present invention, after heat curing,
Temperature range of 65 ° C to 50 ° C and 100 ° C to 200 ° C,
More preferably 0 ° C to 50 ° C and 120 ° C to 170 ° C.
When at least one softening point is provided at each ° C, the thermal cycleability can be further improved. This is considered to be because the change in the elastic modulus is performed stepwise, and the change in stress during the thermal cycle can be absorbed stepwise. The method for obtaining such softening point characteristics is not particularly limited. In order to impart such a softening point property to the adhesive composition itself, it is necessary to use a plurality of thermoplastic resins or thermosetting resins having different softening points and to select those having appropriate mutual compatibility. The compatibility is determined, for example, by setting the adhesive composition to a thickness of 2 mm.
Formed into a film with a thickness of about 5 μm, JIS-K7105
Can be evaluated by measuring the haze by the method specified in In this case, the haze is 5 to obtain the above softening point characteristics.
It is preferably from 0 to 98, and more preferably from 70 to 90.

The adhesive composition has good adhesive strength after heat curing.
Preferably 5Ncm^-1Above, more preferably 10 Ncm
^-1It is preferable that the above is satisfied. Adhesive strength after heat curing is 5N
cm ^-1If lower, peeling may occur when handling the package.
It is not preferable because it may cause reflow resistance.

The thickness of the adhesive layer can be appropriately selected depending on the relationship between the elastic modulus and the coefficient of linear expansion, but is preferably from 2 to 500 μm, more preferably from 20 to 200 μm.

It is essential that the adhesive composition of the present invention contains at least one type of thermoplastic resin and at least one type of thermosetting resin as essential components, but the type is not particularly limited. Thermoplastic resin has functions such as adhesion, flexibility, relaxation of thermal stress, and improvement of insulation due to low water absorption. Thermosetting resin has heat resistance, insulation at high temperatures, chemical resistance, and adhesion. It is necessary to achieve a balance between physical properties such as strength of the agent layer.

As the thermoplastic resin, acrylonitrile-butadiene copolymer (NBR), acrylonitrile-
Butadiene rubber-styrene resin (ABS), polybutadiene, styrene-butadiene-ethylene resin (SEB
S), acrylic acid having a side chain having 1 to 8 carbon atoms and / or
Alternatively, known materials such as methacrylate resin (acrylic rubber), polyvinyl butyral, polyamide, polyester, polyimide, polyamide imide, and polyurethane are exemplified. Further, these thermoplastic resins may have a functional group capable of reacting with a thermosetting resin described below. Specific examples include an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, and a silanol group. These functional groups are preferable because the bond with the thermosetting resin is strengthened and the heat resistance is improved. As the thermoplastic resin, acrylic acid and / or methacrylic acid ester having a side chain having 1 to 8 carbon atoms from the viewpoint of adhesiveness to the material (B), flexibility, and the effect of relieving thermal stress are essential copolymer components. The copolymer is particularly preferable, and various copolymers can be used. Further, in this case, it is more preferable to use the copolymer (D) having a carboxyl group as a functional group with the copolymer (E) having another functional group described above.

Examples of the thermosetting resin include known resins such as an epoxy resin, a phenol resin, a melamine resin, a xylene resin, a furan resin, and a cyanate ester resin. Particularly, epoxy resin and phenol resin are preferable because of their excellent insulating properties. To control the softening point properties, it is necessary to control the compatibility. However, it is an effective method to appropriately select the structure and molecular weight of these thermosetting resins.

The epoxy resin is not particularly limited as long as the epoxy resin has two or more epoxy groups in one molecule, and bisphenol F, bisphenol A, bisphenol S,
Diglycidyl ethers such as resorcinol, dihydroxynaphthalene, dicyclopentadienediphenol, dicyclopentadienedixylenol, epoxidized phenol novolak, epoxidized cresol novolac, epoxidized trisphenylolmethane, epoxidized tetraphenylolethane, epoxidized metaxylene Alicyclic epoxy such as diamine and cyclohexane epoxide,
And the like. Further, it is effective to use a halogenated epoxy resin, particularly a brominated epoxy resin, for imparting flame retardancy. At this time, the flame retardancy can be imparted by using only the brominated epoxy resin, but the heat resistance of the adhesive is greatly reduced. Therefore, it is effective to use a mixed system with the non-brominated epoxy resin. Examples of the brominated epoxy resin include a copolymerized epoxy resin of tetrabromobisphenol A and bisphenol A, or a brominated phenol novolak epoxy resin such as "BREN" -S (manufactured by Nippon Kayaku Co., Ltd.). . These brominated epoxy resins may be used as a mixture of two or more kinds in consideration of the bromine content and the epoxy equivalent.

The molecular weight of the epoxy resin also affects the softening point characteristics because it is related to the compatibility. The molecular weight of the epoxy resin is 4
It is from 00 to 2000, more preferably from 600 to 1500. If it is lower than 400, the compatibility is good, but the modulus of elasticity of the adhesive composition becomes too high, so that the heat stress property is low, which is not preferable. If it exceeds 2,000, the crosslinking density decreases, and heat resistance cannot be obtained, which is not preferable. Epoxy structure is also important for compatibility, dihydroxynaphthalene,
A resin with poor compatibility with a thermoplastic resin such as bisphenol S and a resin with good compatibility with a thermoplastic resin due to having a saturated hydrocarbon group such as dicyclopentadiene diphenol, dicyclopentadiene dixylenol, and hydrogenated bisphenol A It is also effective to mix them appropriately.

As the phenol resin, any known phenol resin such as a novolak phenol resin and a resol phenol resin can be used. For example, alkyl-substituted phenols such as phenol, cresol, pt-butylphenol, nonylphenol, and p-phenylphenol; cyclic alkyl-modified phenols such as terpene and dicyclopentadiene; and heterocycles such as nitro, halogen, cyano, and amino groups. Those having a functional group containing atoms, naphthalene, those having a skeleton such as anthracene,
Examples of resins include polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, resorcinol, and pyrogallol.

The addition amount of the thermosetting resin is 10
5-400 parts by weight, preferably 50-400 parts by weight per 0 parts by weight
200 parts by weight. When the addition amount of the thermosetting resin is less than 5 parts by weight, the elastic modulus at a high temperature is remarkably reduced, and the semiconductor integrated circuit connection substrate is deformed during use of the device on which the semiconductor device is mounted, and is handled in a processing step. This is not preferable because of lack of workability. If the addition amount of the thermosetting resin exceeds 400 parts by weight, the modulus of elasticity is high, the coefficient of linear expansion is small, and the effect of relaxing thermal stress is small.

The addition of a curing agent and a curing accelerator for epoxy resin and phenol resin to the adhesive layer of the present invention is not limited at all. For example, 3,3 ', 5,5'-
Tetramethyl-4,4′-diaminodiphenylmethane,
3,3 ', 5,5'-tetraethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-5,5'-
Diethyl-4,4'-diaminodiphenylmethane, 3,
3'-dichloro-4,4'-diaminodiphenylmethane, 2,2 ', 3,3'-tetrachloro-4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfide, 3,3'-diaminobenzophenone ,
3,3′-diaminodiphenyl sulfone, 4,4′-diaminodiphenyl sulfone, 3,4′-diaminodiphenyl sulfone, 4,4′-diaminobenzophenone,
Aromatic polyamines such as 3,4,4'-triaminodiphenylsulfone; amine complexes of boron trifluoride such as boron trifluoride triethylamine complex; 2-alkyl-4-methylimidazole; 2-phenyl-4-alkylimidazole And the like, known acids such as imidazole derivatives, organic acids such as phthalic anhydride and trimellitic anhydride, dicyandiamide, and triphenylphosphine. These may be used alone or in combination of two or more. The addition amount is preferably 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive composition.

The curability of the curing agent in a normal temperature environment in which the adhesive composition and the adhesive sheet are handled, that is, the pot life is preferably 50 hours or more, and more preferably 100 hours or more. The pot life in the present invention is defined as 30 minutes when a system obtained by mixing 5 parts by weight of a curing agent with 100 parts by weight of bisphenol A diglycidyl ether is stored at 30 ° C.
It is defined as the time at which the viscosity η measured at ° C. becomes twice that immediately after preparation. Examples of such an amine include boron trifluoride amine complexes such as boron trifluoride triethylamine complex, 2-undecylimidazole, 2-heptadecylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, DBU (1, 8-diazabicyclo (5,4,
0) Undecene-7) organic acid salt and the like. It is also possible to substantially impart latent curing properties by microencapsulating the curing agent. An example of such an example is microencapsulated imidazole H
X-3741, HX-3088 (manufactured by Asahi Kasei Corporation), HX-361 which is microencapsulated dicyandiamide
3 (manufactured by Asahi Kasei Corporation).

On the other hand, when a mixture of two or more curing agents is used, at least one kind of each of a cationically polymerizable curing agent and an anionically polymerizable curing agent having a pot life of preferably at least 50 hours, more preferably at least 100 hours, is used. When it is included, the ratio of the storage life to the heat curing rate of the adhesive composition and the adhesive sheet is preferably larger than when each is used alone. In this case, the addition amount ratio of the anionic polymerizable curing agent to the cationic polymerizable curing agent is 0.1 or more and 1 or more.
It is preferably 0 or less, more preferably 0.5 or more and 5 or less. Examples of the combination of the cationic polymerizable curing agent and the anionic polymerizable curing agent include boron trifluoride monoethylamine complex and dicyandiamide, boron trifluoride monoethylamine complex and 2-heptadecyl imidazole,
Sulfonate of antimony fluoride triethylamine complex, dicyandiamide, ammonium tetraphenylborate and DBU (manufactured by San Apro Corporation, UCAT-60)
3) Sulfonium salt of antimony hexafluoride (manufactured by Sanshin Chemical Co., Ltd., "San Aid" SI-100L) and dicyandiamide.

In addition to the above components, addition of organic or inorganic components such as an antioxidant and an ion scavenger is not limited as long as the properties of the adhesive are not impaired. Examples of fine inorganic components include aluminum hydroxide, magnesium hydroxide, metal hydroxides such as calcium aluminate hydrate, silica, alumina, zirconium oxide, zinc oxide, antimony trioxide, antimony pentoxide, and magnesium oxide. Titanium oxide, iron oxide, cobalt oxide, chromium oxide, metal oxides such as talc, inorganic salts such as calcium carbonate, aluminum, gold, silver, nickel, iron, metal fine particles such as, or carbon black, glass, Examples of the organic component include crosslinked polymers such as styrene, NBR rubber, acrylic rubber, polyamide, polyimide, and silicone. These may be used alone or in combination of two or more. The average particle diameter of the fine particle component is preferably 0.2 to 5 μ in consideration of dispersion stability. Also, the compounding amount is suitably 2 to 50 parts by weight of the whole adhesive composition.

The adhesive sheet for a semiconductor device of the present invention is:
The adhesive composition for a semiconductor device of the present invention is used as an adhesive layer, and has at least one or more peelable protective film layers. For example, a two-layer configuration of a protective film layer / adhesive layer or a three-layer configuration of a protective film layer / adhesive layer / protective film layer corresponds to this (FIG. 3). The adhesive layer includes a composite structure in which an insulating film such as polyimide is laminated in addition to a single film of the adhesive composition. The degree of curing of the adhesive sheet may be adjusted by heat treatment. Adjustment of the degree of curing has the effects of preventing excessive flow of the adhesive when bonding the adhesive sheet to the wiring board or IC, and preventing foaming due to moisture during heat curing. The degree of curing can be defined, for example, by the lowest viscosity (flow tester method) at the laminating temperature specified in JIS-K7210. For the flow tester method, conditions must be specified.
× 10mm, test pressure 9.8MPa, 3000 ~
50,000 Pa · s, preferably 6,000 to 30,000
Pa · s is preferred.

The protective film layer referred to here is (A) a wiring board layer (TAB) composed of an insulator layer and a conductor pattern.
Before bonding the adhesive layer to a layer (stiffener or the like) on which no conductive pattern is formed (tape or the like), the adhesive layer is not particularly limited as long as it can be peeled off without impairing the form and function of the adhesive layer. Plastic films such as polyolefin, polyphenylene sulfide, polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, polyvinyl fluoride, polyvinyl butyral, polyvinyl acetate, polyvinyl alcohol, polycarbonate, polyamide, polyimide, polymethyl methacrylate, etc. Alternatively, a film coated with a release agent such as a fluorine compound, a paper laminated with such a film, a paper impregnated or coated with a resin having a release property, and the like can be given.

When a protective film layer is provided on both sides of the adhesive layer, when the peeling force of each protective film layer with respect to the adhesive layer is F ₁ , F ₂ (F ₁ > F ₂ ), F ₁ -F ₂ Is preferably 5 Nm ^-1 or more, more preferably 15 Nm ^-1 or more. If F ₁ −F ₂ is less than 5 Nm ⁻¹ ,
It is not preferable that the protective film layer side of the peeling surface is not stable because it causes a serious problem in use. Also,
Each of the peeling forces F ₁ and F ₂ is preferably ^{1 to} 200 Nm ^−1.
And more preferably 3 to 100 Nm ^-1 . 1 Nm
If it is lower than ^{-1, the} protective film layer will fall off,
If it exceeds Nm- ¹ , peeling is unstable, and the adhesive layer may be damaged.

Next, an example of an adhesive sheet for a semiconductor device using the adhesive composition of the present invention and a method for manufacturing a semiconductor device will be described.

(1) Adhesive sheet (a) A paint obtained by dissolving the adhesive composition of the present invention in a solvent is
It is applied on a polyester film having releasability and dried. It is preferable to apply the adhesive layer so that the film thickness is 10 to 100 μm. Drying conditions are 100-200
° C, 1-5 minutes. The solvent is not particularly limited, but aromatic solvents such as toluene, xylene and chlorobenzene, ketones such as methyl ethyl ketone and methyl isobutyl ketone,
Aprotic polar solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, etc., alone or in a mixture are preferred.

(B) The adhesive sheet of the present invention is obtained by laminating a polyester or polyolefin-based protective film layer having a releasability having a lower peel strength than the above to the film of (a). When the thickness of the adhesive is further increased, the adhesive sheet may be laminated plural times. After lamination, the degree of curing may be adjusted by heat treatment at 40 to 70 ° C. for about 20 to 200 hours.

(2) Semiconductor Device (a) A 35 to 12 μm electrolytic copper foil is laminated on a tape with an adhesive for TAB under conditions of 130 to 170 ° C. and 0.1 to 0.5 MPa, and then laminated in an air oven. 80-1
70 ° C, sequential heating and curing, with copper foil TA
Create a tape for B. Photoresist film formation, etching, resist peeling, electrolytic nickel plating, electrolytic gold plating, and solder resist film formation are performed on the copper foil surface of the obtained TAB tape with copper foil by a conventional method, respectively, to produce a wiring board.

(B) The adhesive sheet obtained in (1) is thermocompression-bonded to the wiring board of (a), and an IC is thermocompression-bonded to the opposite surface of the adhesive sheet. 120 to 18 in this state
Heat curing at 0 ° C.

(C) The IC and the wiring board are 110 to 200
After wire bonding connection at 100 ° C. and about 100 to 150 kHz, resin sealing is performed.

(D) Finally, a solder ball was mounted by reflow to obtain a semiconductor device of the present invention.

[0039]

EXAMPLES The present invention will be described below with reference to examples.
The present invention is not limited to these examples. Before starting the description of the embodiments, an evaluation method will be described.

Evaluation method (1) Preparation of evaluation pattern tape: TAB adhesive tape (# 7100, (type 31N0-00FS),
Toray Co., Ltd.) was coated with an 18 μm electrolytic copper foil at 140 ° C. and 0.
Lamination was performed under the conditions of 1 MPa. Subsequently, in an air oven, 80 ° C., 3 hours, 100 ° C., 5 hours, 150 ° C., 5 ° C.
Heat curing treatment was performed sequentially over time to prepare a TAB tape with a copper foil. Photoresist film formation, etching, resist peeling, electrolytic nickel plating, and electrolytic gold plating were performed on the copper foil surface of the obtained TAB tape with copper foil by a conventional method, and a pattern tape sample for evaluation was prepared. Nickel plating thickness is 3μm, gold plating thickness is 1μ
m.

(2) Adhesive force: After laminating the adhesive sheet of the present invention on the back surface of the evaluation pattern tape of (1) at 130 ° C. and 0.1 MPa, the silicon wafer was heated at 170 ° C. and 0.3 MPa. Under the conditions described above, the adhesive sheet was heat-pressed. Subsequently, heat curing treatment was performed at 170 ° C. for 2 hours in an air oven. The pattern tape of the obtained sample is cut so as to have a width of 2 mm.
Peeling was performed at a speed of 0 mm / min, and the adhesive force at that time was measured.

(3) Wire bonding property: An evaluation semiconductor device having the structure shown in FIG. 2 was prepared by using the IC having aluminum electrode pads instead of the silicon wafer in the method of (3). To this, a 25 μm gold wire
Bonding was performed at 110 ° C. at 110 ° C. The evaluation was performed by measuring the tensile strength of the wire.

(4) Reflow resistance: A 30 mm square sample prepared by the above method (3) was used at 85 ° C. and 85% RH.
After humidifying for 168 hours under the atmosphere described above, the mixture was immediately passed through an infrared reflow furnace at a maximum temperature of 230 ° C. for 10 seconds, and swelling and peeling were confirmed.

(5) Thermal cycle test: The semiconductor device sample of 20 mm square for evaluation prepared by the method of (4) above was used.
Heat cycle tester (PL-3, manufactured by Tabai Espec Inc.)
The mold was subjected to 600 cycles of treatment at −20 ° C. to 100 ° C. and a minimum and maximum temperature of 1 hour each, and the occurrence of peeling was evaluated.

(6) Haze measurement: An adhesive sheet having a thickness of 25 μm was prepared, and a haze meter (manufactured by Suga Test Instruments Co., Ltd.)
HGM was measured in accordance with JIS-K7105 using HGM-2DP type.

(7) Curing degree (fluidity): The viscosity at 120 ° C. was measured using a flow tester (CFT-500D-PC type, manufactured by Shimadzu Corporation) in accordance with JIS-K7210. Die size 2 × 10mm, test pressure 9.8MP
a. The sample used was an uncured adhesive sheet immediately after coating.

(8) Elastic modulus and softening point: Dynamic viscoelasticity measuring device (REOVIBLON DDV-II, manufactured by Orientec Co., Ltd.)
35), temperature rise rate 2 ° C / min
Storage elastic modulus E ′, loss elastic modulus E ″, tan δ
(= E ″ / E ′) was measured. Softening point is ta
A peak temperature of nδ was employed. Sample is 100 ℃ 1
After a lapse of time, a material having a thickness of 0.5 mm which was cured by heating at 170 ° C. for 2 hours was used.

Example 1 (Preparation of Adhesive Sheet) Spherical silica (manufactured by Admatex Co., Ltd., SO-C5) was mixed with toluene, followed by sand milling to prepare a silica dispersion. A carboxyl group-containing acrylic rubber containing butyl acrylate as a main component (SG70L, manufactured by Teikoku Chemical Industry Co., Ltd.)
DR), an epoxy group-containing acrylic rubber also containing butyl acrylate as a main component (SG, manufactured by Teikoku Chemical Industry Co., Ltd.)
P-3 DR), bisphenol A type epoxy resin ("Epicoat" 100 manufactured by Yuka Shell Epoxy Co., Ltd.)
1, epoxy equivalent 470) and dicyclopentadiene dixylenol type epoxy resin (manufactured by Toto Kasei Co., Ltd., "
Epotote "YDDP-100, epoxy equivalent 26"
0), boron trifluoride monoethylamine complex, dicyandiamide, and a dispersion were added to each of the same proportions of methyl ethyl ketone so as to have the composition ratio shown in Table 1, followed by stirring and mixing at 30 ° C. to prepare an adhesive solution. This adhesive solution was applied to a 38 μm-thick polyethylene terephthalate film (“Film Vina” GT manufactured by Fujimori Kogyo Co., Ltd.) with a silicone release agent to a dry thickness of about 50 μm using a bar coater. After drying for 5 minutes, an adhesive sheet for a semiconductor device of the present invention was prepared. The composition is shown in Table 1 and the characteristics are shown in Table 2.

(Preparation of Semiconductor Device) TAB Adhesive Tape (Type # 7100, (31N0-00FS),
Toray Co., Ltd.) was coated with an 18 μm electrolytic copper foil at 140 ° C. and 0.
Lamination was performed under the conditions of 1 MPa. Subsequently, in an air oven, 80 ° C., 3 hours, 100 ° C., 5 hours, 150 ° C., 5 ° C.
Heat curing treatment was performed sequentially over time to prepare a TAB tape with a copper foil. On the copper foil surface of the obtained TAB tape with copper foil, a photoresist film was formed, etched, stripped of resist, electrolytic nickel plating, electrolytic gold plating, and photo solder resist processing were respectively performed by a conventional method to prepare a pattern tape. Nickel plating thickness is 3μm,
The gold plating thickness was 1 μm. Subsequently, after laminating the adhesive sheet of the present invention on the back surface of the pattern tape at 130 ° C. and 0.1 MPa, an IC having an aluminum electrode pad is heat-pressed to the adhesive sheet at 170 ° C. and 0.3 MPa. did. Next, heat curing treatment was performed at 170 ° C. for 2 hours in an air oven. Subsequently, a gold wire of 25 μm was bonded thereto at 150 ° C. and 110 kHz. Furthermore, it sealed with liquid sealing resin (Chipcoat 8118, manufactured by Namics Corporation). Finally, a solder ball was mounted, and a semiconductor device having the structure shown in FIG. 1 was produced.

Example 2 Bisphenol A novolak type epoxy resin ("Epicoat" 157S, epoxy equivalent 200, manufactured by Yuka Shell Epoxy Co., Ltd.), hydrogenated bisphenol A type epoxy resin (manufactured by Yuka Shell Epoxy Co., Ltd.) , "Epicoat" YL6
663, epoxy equivalent 205), 4,4'-diaminodiphenylsulfone, imidazole-based microencapsulated curing agent ("NOVACURE" HX-308, manufactured by Asahi Kasei Corporation)
An adhesive sheet was obtained in the same manner as in Example 1 except that 8) was used. The composition is shown in Table 1 and the characteristics are shown in Table 2.

Example 3 Carboxyl group-containing acrylic rubber (Teikoku Chemical Industry Co., Ltd.)
SG70L DR), a hydroxyl group-containing acrylic rubber containing butyl acrylate as a main component (manufactured by Tope Corporation, XF
-1834), bisphenol A type epoxy resin (manufactured by Yuka Shell Epoxy Co., Ltd., "Epicoat" 1001, epoxy equivalent: 470), phenol resole resin (manufactured by Showa Polymer Co., Ltd., CKM1282), 4,4 ' -An adhesive sheet was obtained in the same manner as in Example 1 except that diaminodiphenyl sulfone and boron trifluoride monoethylamine complex were used. The composition is shown in Table 1 and the characteristics are shown in Table 2.

Comparative Example 1 Active chlorine group-containing acrylic rubber (manufactured by Zeon Corporation, A
R-71), bisphenol A type epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epiccoat" 828, epoxy equivalent 1)
86), and an adhesive sheet was obtained in the same manner as in Example 1 except that metaphenylenediamine was used. The composition is shown in Table 1 and the characteristics are shown in Table 2.

Comparative Example 2 An acrylic rubber having a weight average molecular weight of 300,000 (comparative product 1) was synthesized by butyl acrylate / ethyl acrylate = 90/10 (molar ratio) by a solution polymerization method. Using this acrylic rubber, epoxy resin (manufactured by Yuka Shell Co., Ltd.)
Epicoat "828, epoxy equivalent 186) and 2-ethyl-4-methylimidazole were added to obtain an adhesive sheet in the same manner as in Example 1. The composition is shown in Table 1, and the properties are shown in Table 2.

[0054]

[Table 1]

BF ₃ MEA represents boron trifluoride monoethylamine complex, DICY represents dicyandiamide, MPD represents metaphenylenediamine, DDS represents 4,4′-diaminodiphenyl sulfone, and 2E4MZ represents 2-ethyl-4-methylimidazole. All resin compositions indicate parts by weight.

[0056]

[Table 2]

The adhesive compositions for semiconductor devices obtained from the examples and comparative examples of Tables 1 and 2 according to the present invention are excellent in workability, adhesive strength, wire bonding properties, heat cycle reliability and reflow resistance. I understand.

[0058]

Industrial Applicability The present invention provides a novel adhesive composition for a semiconductor device which is excellent in processability, adhesive strength, wire bonding property, heat cycle reliability and reflow resistant adhesive strength, and an adhesive sheet for a semiconductor device using the same. Further, the present invention provides a semiconductor device industrially, and the adhesive composition for a semiconductor device of the present invention can improve the reliability of the semiconductor device.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of one embodiment of a BGA type semiconductor device using a semiconductor device adhesive composition and a semiconductor device adhesive sheet of the present invention.

FIG. 2 is a cross-sectional view of one embodiment of the adhesive sheet for a semiconductor device of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor integrated circuit 2, 9 Adhesive layer comprised of the adhesive composition of this invention 3 Wiring board layer 4 Conductor part for solder ball connection 5 Bonding wire 6 Solder ball 7 Sealing resin 8 Adhesive sheet of this invention Constituting the protective film layer

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (reference) H01L 21/60 301 H01L 21/60 301A 23/12 23/12 LF term (reference) 4J004 AA02 AA05 AA08 AA10 AA12 AA13 AA15 AA16 AB05 CA06 CB03 DA02 DA03 DB03 FA05 FA08 4J040 CA051 CA052 CA071 CA072 CA081 CA082 DD071 DD072 DF031 DF032 DN031 DN032 EB031 EB032 EB131 EB132 EC001 EC002 E03 EG001 EF001 001 MA02 MA10 MB09 NA20 5F044 AA02

Claims (7)

[Claims] 1. A semiconductor integrated circuit comprising: (A) a wiring board layer comprising an insulator layer and a conductor pattern; (B) an adhesive layer; (C) a semiconductor integrated circuit; An adhesive composition for a semiconductor device which forms an adhesive layer (B) of a semiconductor device having a structure in which a substrate layer is connected by wire bonding, wherein the adhesive composition comprises a thermoplastic resin and thermosetting as essential components. The adhesive composition after heating and curing includes at least one kind of each of the conductive resins,
It has at least one softening point in a temperature range of 50 ° C. and has an elastic modulus E ′ of 1 M at 100 ° C. to 150 ° C.
An adhesive composition for a semiconductor device, wherein Pa ≦ E ′ ≦ 500 MPa. 2. The adhesive composition after heat curing has a temperature of -65 ° C.
The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition has at least one softening point in a temperature range of 50C and 100C to 200C. 3. The thermoplastic resin contained in the adhesive composition,
Resin (D) having acrylic acid and / or methacrylic acid ester having a side chain having 1 to 8 carbon atoms and a carboxyl group as essential components, and acrylic acid and / or methacrylic acid ester having a side chain having 1 to 8 carbon atoms And at least one resin (E) having at least one functional group selected from an epoxy group, a hydroxyl group, an amino group, a methylol group, a vinyl group and a silanol group as an essential component. Adhesive composition for semiconductor devices. 4. The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition contains an epoxy resin and / or a phenol resin as the thermosetting resin. 5. The adhesive for a semiconductor device according to claim 1, wherein the adhesive composition contains at least one kind of a cationically polymerizable hardener and / or an anionic polymerizable hardener having a pot life of 50 hours or more. Composition. 6. An adhesive sheet for a semiconductor device comprising the adhesive composition for a semiconductor device according to claim 1 as an adhesive layer and having at least one or more releasable protective film layers. 7. A semiconductor device using the adhesive sheet for a semiconductor device according to claim 6.