WO2019146796A1 - 試料保持具 - Google Patents
試料保持具 Download PDFInfo
- Publication number
- WO2019146796A1 WO2019146796A1 PCT/JP2019/002931 JP2019002931W WO2019146796A1 WO 2019146796 A1 WO2019146796 A1 WO 2019146796A1 JP 2019002931 W JP2019002931 W JP 2019002931W WO 2019146796 A1 WO2019146796 A1 WO 2019146796A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lead pin
- sample holder
- conductive member
- conductive
- insulating substrate
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Definitions
- the present disclosure relates to a sample holder.
- Patent Document 1 a semiconductor manufacturing apparatus described in Japanese Patent Laid-Open No. 2013-191626 (hereinafter referred to as Patent Document 1) is known.
- the semiconductor manufacturing apparatus disclosed in Patent Document 1 includes a ceramic substrate, an electrode terminal provided on the back surface of the ceramic substrate, a base member fixed to the back surface of the ceramic substrate, and an insulating member fixed to the through hole of the base member.
- the insulating resin covers the sleeve, the cable connected to the electrode terminal, and the gap between the insulating sleeve and the ceramic substrate together with the connection between the electrode terminal and the cable.
- the sample holder of the present disclosure includes a plate-like insulating substrate, a conductive member provided on the lower surface of the insulating substrate, a lead pin bonded to the conductive member and extending downward from the insulating substrate, and a lower surface of the insulating substrate.
- a tubular member joined and surrounding the lead pin, a first member located inside the tubular member, covering a junction between the conductive member and the lead pin, and covering the first member; And a second member to be filled in, the first member being in the form of gel.
- FIG. 1 is a cross-sectional view showing a sample holder 10 which is an example of the present disclosure.
- the sample holder 10 includes an insulating base 1, a conductive member 2, a lead pin 3, and a cylindrical member 4.
- the insulating base 1 is a member for holding a sample.
- the insulating base 1 is a plate-like member, and is, for example, a disk or a square plate.
- the insulating base 1 has an upper surface and a lower surface.
- the upper surface of the insulating base 1 is, for example, the sample holding surface 11.
- the insulating substrate 1 may have the heating resistor 8 inside or on the lower surface.
- the insulating substrate 1 may have an electrostatic adsorption electrode inside.
- the insulating substrate 1 comprises, for example, a ceramic material.
- the ceramic material may be, for example, alumina, aluminum nitride, silicon nitride or yttria.
- the dimensions of the insulating substrate 1 can be, for example, 48 to 460 mm in diameter and 1 to 18 mm in thickness.
- upper surface and “lower surface” here are used for the facilities of description, Comprising: It does not limit embodiment of invention.
- the sample holder 10 may be used such that the upper surface is located below the lower surface.
- the conductive member 2 is provided on the lower surface of the insulating base 1.
- the conductive member 2 may be a member electrically connected to the heating resistor 8.
- the insulating base 1 may have a through hole conductor for electrically connecting the heating resistor 8 and the conductive member 2.
- the conductive member 2 has a conductive material such as, for example, platinum, AgPb or tungsten.
- the conductive member 2 can have, for example, an area exposed to the lower surface of 400 to 160000 mm 2 and a thickness of 0.005 to 0.1 mm.
- the conductive member 2 itself may be the heating resistor 8.
- the lead pin 3 is a member for electrically connecting the conductive member 2 and an external power supply.
- the shape of the lead pin 3 is, for example, a rod shape.
- One end of the lead pin 3 is joined to the conductive member 2 by, for example, a joining material.
- the lead pin 3 has a conductive member such as an Fe-Ni-Co alloy or Ti.
- the dimensions of the lead pin 3 can be, for example, 1 to 10 mm in width and 3 to 20 mm in length when viewed in a cross section perpendicular to the sample holding surface 11.
- As the bonding material for example, solder or silver-copper solder can be used.
- the cylindrical member 4 is a member for securing the electrical insulation between the lead pin 3 and the metal base 7.
- the cylindrical member 4 is joined to the lower surface of the insulating base 1 so as to surround the lead pin 3.
- the cylindrical member 4 is joined to the lower surface of the insulating base 1 by, for example, an adhesive 9.
- the cylindrical member 4 is, for example, a cylindrical member.
- the cylindrical member 4 may have, for example, a portion with a large inner diameter and a portion with a small inner diameter.
- the cylindrical member 4 has, for example, a resin such as polyether imide or fluorine-based resin or alumina.
- the cylindrical member 4 can have, for example, an inner diameter of 1.5 to 8 mm, an outer diameter of 4 to 30 mm, and a length of 10 to 50 mm.
- a metal base 7 may be provided on the lower surface of the insulating base 1.
- the metal base 7 is a member for supporting the insulating base 1.
- the metal base 7 is, for example, a disk-shaped member.
- the metal base 7 has a plurality of through holes, and the cylindrical member 4 may be provided inside the through holes.
- the metal substrate 7 has a metal material such as, for example, Cu or an Fe-Ni-Co alloy.
- the metal substrate 7 can have, for example, a diameter of 48 to 460 mm and a thickness of 10 to 50 mm.
- the heater of the present disclosure includes a first member 5 that covers the joint between the conductive member 2 and the lead pin 3 inside the cylindrical member 4 and a second member 6 that is filled inside, and the first member 5 is gel-like.
- the first member 5 is gel-like, when an external force is applied to the junction between the conductive member 2 and the lead pin 3 while fixing the lead pin 3 to the cylindrical member 4 by the second member 6, The external force can be absorbed by the deformation of the first member 5. Therefore, the possibility of breakage of the joint between the conductive member 2 and the lead pin 3 can be reduced. As a result, the durability of the sample holder 10 can be enhanced.
- the first member 5 can use, for example, silicone that becomes gel after curing as the first member 5.
- a member such as epoxy or silicone which becomes a solid having no viscosity after curing can be used.
- a gel means what became the solid which has viscosity as a whole system by hardening.
- the first member 5 may be a member having a smaller elastic modulus than the second member 6. Also in this case, the thermal stress generated at the joint portion between the conductive member 2 and the lead pin 3 can be relieved by the first member 5. Therefore, the possibility of breakage of the joint between the conductive member 2 and the lead pin 3 can be reduced. As a result, the durability of the sample holder 10 can be enhanced.
- the first member 5 is a member having a smaller elastic modulus than the second member 6, for example, when the second member 6 is an epoxy resin, the first member 5 can be made of a silicone resin.
- the second member 6 does not have to be completely filled inside the cylindrical member 4, and may be provided to such an extent that foreign matter such as water does not intrude inside the cylindrical member 4.
- the second member 6 may be filled inside the tubular member 4 at least at a portion where the inner diameter is large.
- the first member 5 may be thinner in shape as it goes away from the lower surface when looking at a cross section perpendicular to the lower surface.
- the first member 5 since the amount of the first member 5 is large in the vicinity of the lower surface of the insulating base 1, the first member 5 can relieve the thermal stress generated at the bonding portion between the conductive member 2 and the lead pin 3.
- the amount of providing the second member 6 can be increased as the distance from the lower surface is increased, the adhesive strength of the lead pin 3 can be enhanced. As a result, the durability of the sample holder 10 can be enhanced.
- the lead pin 3 has a first portion 31 located inside the tubular member 4 and a second portion 32 located outside the tubular member 4,
- the portion 31 may have a third portion 311 thinner than the second portion 32.
- the third portion 311 can be deformed. Therefore, the stress generated in the first portion 31 can be absorbed by the third portion 311.
- the second portion 32 is thicker than the third portion 311, the strength against external force can be increased. As a result, the durability of the sample holder 10 can be enhanced.
- the diameter of the third portion 311 can be 1 to 3 mm, and the diameter of the second portion 32 can be 1.5 to 5 mm. Further, the length of the third portion 311 can be 3 to 35 mm, and the length of the second portion 32 can be 1 to 50 mm. Note that the first portion 31 does not have to be the third portion 311 which is thinner than the entire second portion 32, and even if there is a portion thicker than the second portion 32 or as thick as the second portion 32. Good. In addition, a portion having the same diameter as the second portion 32 may continue to the inside of the cylindrical member 4.
- the lead pin 3 may be wider than the third portion 311 at the joint with the conductive member 2. Thereby, the contact area between the conductive member 2 and the lead pin 3 can be increased. Therefore, the bonding strength between the conductive member 2 and the lead pin 3 can be increased.
- the third portion 311 is located in the vicinity of the bonding portion, and the first member 5 covers the bonding portion between the conductive member 2 and the lead pin 3 and the third portion 311. It is also good. As a result, the possibility of breakage of the lead pin 3 can be reduced particularly in the joint where stress is likely to concentrate and in the vicinity of the joint. As a result, the durability of the sample holder 10 can be enhanced.
- Insulating base 11 sample holding surface 2: conductive member 3: lead pin 31: first portion 311: third portion 32: second portion 4: cylindrical member 5: first member 6: second member 7: metal base 8: Heating resistor 9: Adhesive 10: Sample holder
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
Description
11:試料保持面
2:導電部材
3:リードピン
31:第1部分
311:第3部分
32:第2部分
4:筒状部材
5:第1部材
6:第2部材
7:金属基体
8:発熱抵抗体
9:接着剤
10:試料保持具
Claims (5)
- 板状の絶縁基体と、
該絶縁基体の下面に設けられた導電部材と、
該導電部材に接合され前記絶縁基体より下方に伸びるリードピンと、
前記絶縁基体の下面に接合され、前記リードピンを囲む筒状部材と、
該筒状部材の内側に位置しており、
前記導電部材と前記リードピンとの接合部を覆う第1部材と、
該第1部材を覆い、前記内側に充填される第2部材と、を備えており、
前記第1部材は、ゲル状である試料保持具。 - 板状の絶縁基体と、
該絶縁基体の下面に設けられた導電部材と、
該導電部材に接合され前記絶縁基体より下方に伸びるリードピンと、
前記絶縁基体の下面に接合され、前記リードピンを囲む筒状部材と、
該筒状部材の内側に位置しており、
前記導電部材と前記リードピンとの接合部を覆う第1部材と、
該第1部材を覆い、前記内側に充填される第2部材と、を備えており、
前記第1部材は、前記第2部材よりも弾性率が小さい試料保持具。 - 前記第1部材は、前記下面に垂直な断面を見たときに、前記下面から離れるにつれて形状が細くなっている請求項1または請求項2に記載の試料保持具。
- 前記リードピンは、前記筒状部材の内側に位置する第1部分と、前記筒状部材の外側に位置する第2部分とを有しており、
前記第1部分は、前記第2部分よりも細い第3部分を有する請求項1乃至請求項3のいずれかに記載の試料保持具。 - 前記リードピンは、前記導電部材との接合部において、前記第3部分よりも広がっている請求項4に記載の試料保持具。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/965,419 US11640920B2 (en) | 2018-01-29 | 2019-01-29 | Sample holder |
KR1020207020153A KR102441256B1 (ko) | 2018-01-29 | 2019-01-29 | 시료 유지구 |
JP2019567212A JP7014821B2 (ja) | 2018-01-29 | 2019-01-29 | 試料保持具 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-012757 | 2018-01-29 | ||
JP2018012757 | 2018-01-29 |
Publications (1)
Publication Number | Publication Date |
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WO2019146796A1 true WO2019146796A1 (ja) | 2019-08-01 |
Family
ID=67395585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2019/002931 WO2019146796A1 (ja) | 2018-01-29 | 2019-01-29 | 試料保持具 |
Country Status (4)
Country | Link |
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US (1) | US11640920B2 (ja) |
JP (1) | JP7014821B2 (ja) |
KR (1) | KR102441256B1 (ja) |
WO (1) | WO2019146796A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6947932B2 (ja) * | 2018-06-26 | 2021-10-13 | 京セラ株式会社 | 試料保持具 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02132954U (ja) * | 1989-04-12 | 1990-11-05 | ||
JP2013191626A (ja) * | 2012-03-12 | 2013-09-26 | Ngk Insulators Ltd | 半導体製造装置及びその製法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5886863A (en) * | 1995-05-09 | 1999-03-23 | Kyocera Corporation | Wafer support member |
US6072685A (en) * | 1998-05-22 | 2000-06-06 | Applied Materials, Inc. | Electrostatic chuck having an electrical connector with housing |
US6151203A (en) * | 1998-12-14 | 2000-11-21 | Applied Materials, Inc. | Connectors for an electrostatic chuck and combination thereof |
JP3870824B2 (ja) * | 2001-09-11 | 2007-01-24 | 住友電気工業株式会社 | 被処理物保持体、半導体製造装置用サセプタおよび処理装置 |
JP5348439B2 (ja) * | 2011-09-30 | 2013-11-20 | Toto株式会社 | 静電チャック |
JP6006972B2 (ja) * | 2012-04-26 | 2016-10-12 | 新光電気工業株式会社 | 静電チャック |
JP6428456B2 (ja) * | 2014-04-09 | 2018-11-28 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP6424049B2 (ja) * | 2014-09-12 | 2018-11-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP7026778B2 (ja) * | 2018-03-23 | 2022-02-28 | 日本碍子株式会社 | 半導体製造装置 |
JP7090481B2 (ja) * | 2018-06-15 | 2022-06-24 | 新光電気工業株式会社 | 静電チャック及びその製造方法 |
WO2020117594A1 (en) * | 2018-12-04 | 2020-06-11 | Applied Materials, Inc. | Substrate supports including metal-ceramic interfaces |
-
2019
- 2019-01-29 US US16/965,419 patent/US11640920B2/en active Active
- 2019-01-29 WO PCT/JP2019/002931 patent/WO2019146796A1/ja active Application Filing
- 2019-01-29 KR KR1020207020153A patent/KR102441256B1/ko active IP Right Grant
- 2019-01-29 JP JP2019567212A patent/JP7014821B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02132954U (ja) * | 1989-04-12 | 1990-11-05 | ||
JP2013191626A (ja) * | 2012-03-12 | 2013-09-26 | Ngk Insulators Ltd | 半導体製造装置及びその製法 |
Also Published As
Publication number | Publication date |
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JPWO2019146796A1 (ja) | 2021-01-28 |
JP7014821B2 (ja) | 2022-02-01 |
KR20200095557A (ko) | 2020-08-10 |
KR102441256B1 (ko) | 2022-09-07 |
US11640920B2 (en) | 2023-05-02 |
US20210143046A1 (en) | 2021-05-13 |
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