WO2019131450A1 - 研磨用組成物 - Google Patents

研磨用組成物 Download PDF

Info

Publication number
WO2019131450A1
WO2019131450A1 PCT/JP2018/047029 JP2018047029W WO2019131450A1 WO 2019131450 A1 WO2019131450 A1 WO 2019131450A1 JP 2018047029 W JP2018047029 W JP 2018047029W WO 2019131450 A1 WO2019131450 A1 WO 2019131450A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing composition
vibration
polishing
average molecular
molecular weight
Prior art date
Application number
PCT/JP2018/047029
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
智基 山崎
弘 牧野
Original Assignee
ニッタ・ハース株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=67067368&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2019131450(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by ニッタ・ハース株式会社 filed Critical ニッタ・ハース株式会社
Priority to CN201880084112.6A priority Critical patent/CN111512419B/zh
Priority to SG11202004613WA priority patent/SG11202004613WA/en
Priority to DE112018006724.6T priority patent/DE112018006724T5/de
Priority to KR1020207018424A priority patent/KR20200093607A/ko
Publication of WO2019131450A1 publication Critical patent/WO2019131450A1/ja

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Definitions

  • the present invention relates to a polishing composition.
  • JP-A-2016-124943 discloses a polishing composition containing a water-soluble polymer of polyvinyl alcohol and a piperazine compound as a polishing composition capable of reducing the surface roughness of a wafer without reducing the polishing rate. Objects are disclosed.
  • double-sided polishing is generally performed.
  • polishing is performed by sandwiching a wafer held by a dedicated carrier between upper and lower platens to which pads are attached.
  • the polishing composition may contain a water-soluble polymer.
  • the device may vibrate due to the friction between the carrier and the polishing pad.
  • the load and the number of rotations are increased to increase the processing efficiency, the vibration of the device is increased, which causes the quality deterioration of the silicon wafer and the failure of the device.
  • An object of the present invention is to provide a polishing composition capable of reducing the vibration of the apparatus.
  • the polishing composition according to one embodiment of the present invention is a polymer having an ethylene oxide group, having a weight average molecular weight of 1,500 to 30,000, and colloidal silica, a water soluble polymer, a basic compound, water, and And a vibration suppressor, wherein the molar concentration of the vibration suppressor is 6.9 ⁇ 10 -10 mol / g or more, and the weight average molecular weight of the ethylene oxide group portion per molecule of the vibration suppressor and the vibration suppression
  • the product of the agent and the mass concentration is 8.0 ⁇ 10 ⁇ 2 or more, and the vibration suppressor has a weight average molecular weight ratio of ethylene oxide group to alkylene oxide group of 80% or more.
  • a polishing composition capable of reducing the vibration of the apparatus can be obtained.
  • FIG. 1 is a scatter diagram in which the abscissa represents the molar concentration of the vibration suppressor and the ordinate represents the W EO concentration.
  • the apparatus vibration can be suppressed by containing a polymer having a weight average molecular weight of 1,500 to 30,000 and having an ethylene oxide group in a polishing composition at a predetermined concentration or more.
  • a polymer having a weight average molecular weight of 1,500 to 30,000 and having an ethylene oxide group in a polishing composition at a predetermined concentration or more.
  • a copolymer with a propylene oxide group which is a hydrophobic group may be contained as a surfactant in the polishing composition.
  • a polymer containing a large amount of alkylene oxide groups other than ethylene oxide groups is used for double-side polishing of a semiconductor wafer, the shape of the laser mark (concave and convex in order to indicate the crystal orientation of the semiconductor wafer) is significantly degraded.
  • the polishing composition according to an embodiment of the present invention comprises colloidal silica, a water-soluble polymer, a basic compound, water, and a vibration suppressor.
  • colloidal silica those commonly used in this field can be used.
  • the particle size of the colloidal silica is not particularly limited, and for example, those having a secondary average particle size of 20 to 130 nm can be used.
  • the content of colloidal silica is not particularly limited, and is, for example, 0.15 to 20% by mass of the entire polishing composition (raw solution).
  • the polishing composition is used diluted 10 to 80 times at the time of polishing.
  • the polishing composition according to the present embodiment is preferably used by diluting so that the concentration of silica is 100 to 5000 ppm (mass ppm, hereinafter the same).
  • the water-soluble polymer adsorbs to the surface of the semiconductor wafer to reform the surface of the semiconductor wafer. This improves the uniformity of polishing and can reduce the surface roughness.
  • the water-soluble polymer is not limited thereto, but hydroxyethyl cellulose (HEC), hydroxyethyl methyl cellulose, hydroxypropyl cellulose, carboxymethyl cellulose, cellulose such as cellulose acetate, methyl cellulose etc., polyvinyl alcohol (PVA), polyvinyl pyrrolidone (PVP) etc. Vinyl polymers, glycosides (glycosides), polyhydric alcohols and the like can be used.
  • the water-soluble polymer is preferably a polymer having no alkylene oxyside group.
  • the water-soluble polymers described above those having a structure having a high molecular weight and easily incorporating water molecules are preferable, and HEC is particularly preferable.
  • the content of the water-soluble polymer is not limited to this, and is, for example, 0.01 to 1.2% by mass of the whole polishing composition (stock solution).
  • the basic compound etches and chemically polishes the surface of the semiconductor wafer.
  • the basic compound is, for example, an amine compound, an inorganic alkali compound or the like.
  • the amine compound is, for example, a primary amine, a secondary amine, a tertiary amine, a quaternary ammonium and its hydroxide, a heterocyclic amine or the like.
  • ammonia tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrabutylammonium hydroxide (TBAH), methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, hexylamine, Cyclohexylamine, ethylenediamine, hexamethylenediamine, diethylenetriamine (DETA), triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, monoethanolamine, diethanolamine, triethanolamine, N- ( ⁇ -aminoethyl) ethanolamine, anhydrous piperazine , Piperazine hexahydrate, 1-
  • the inorganic alkali compound examples include hydroxides of alkali metals, salts of alkali metals, hydroxides of alkaline earth metals, salts of alkaline earth metals and the like.
  • the inorganic alkali compound is potassium hydroxide, sodium hydroxide, potassium hydrogencarbonate, potassium carbonate, sodium hydrogencarbonate, sodium carbonate or the like.
  • the above-mentioned basic compounds may be used alone or in combination of two or more.
  • ammonia, amines, hydroxides of alkali metals, and carbonates of alkali metals are particularly preferable.
  • the content of the basic compound is not particularly limited, and is, for example, 0.01 to 1.2% by mass of the entire polishing composition.
  • the polishing composition according to the present embodiment further includes a polymer having a weight average molecular weight of 1,500 to 30,000 and an ethylene oxide group as a vibration suppressor. That is, the polishing composition according to the present embodiment includes, in addition to the water-soluble polymer described above, one or more polymers acting as a vibration suppressor.
  • Examples of polymers that can be used as vibration inhibitors include polyethylene glycol (PEG), glycerin derivatives, poloxamines, ethylene glycol diglycidyl ethers, polyhydric alcohol derivatives, fatty acid hydrocarbon esters, alkylamine derivatives, organo And polysiloxanes.
  • PEG polyethylene glycol
  • glycerin derivatives glycerin derivatives
  • poloxamines ethylene glycol diglycidyl ethers
  • polyhydric alcohol derivatives ethylene glycol diglycidyl ethers
  • fatty acid hydrocarbon esters alkylamine derivatives
  • organo And polysiloxanes organo And polysiloxanes.
  • the vibration suppression agent adsorbs to the surface of the carrier or pad to form a layer, thereby changing the contact state of these to suppress vibration. If the weight average molecular weight is less than 1,500, the thickness of the adsorption layer is small, and the effect as a vibration suppressor can not be obtained.
  • the lower limit of the weight-average molecular weight of the polymer used as the vibration suppressor is preferably 2,000, and more preferably 3,000. On the other hand, when the weight average molecular weight is higher than 30,000, the number of molecules is reduced, density is generated in the adsorption layer, and the effect as a vibration suppressor can not be obtained.
  • the upper limit of the weight-average molecular weight of the polymer used as the vibration suppressor is preferably 25,000, and more preferably 20,000.
  • the molar concentration (when used) of the vibration suppressor is 6.9 ⁇ 10 ⁇ 10 mol / g or more. If the molar concentration of the vibration suppressor is less than 6.9 ⁇ 10 -10 mol / g, the effect as the vibration suppressor can not be obtained.
  • the lower limit of the molar concentration of the vibration suppressor is preferably 1.0 ⁇ 10 ⁇ 9 mol / g, and more preferably 2.0 ⁇ 10 ⁇ 9 mol / g.
  • the upper limit of the molar concentration of the vibration suppressor is preferably 5.0 ⁇ 10 ⁇ 6 m, more preferably 5.0 ⁇ 10 ⁇ 8 mol / g.
  • the content of the vibration suppressor in the polishing composition (stock solution) is not particularly limited, and is, for example, 0.005 to 0.5% by mass.
  • the polishing composition according to the present embodiment is the product of the weight average molecular weight of the ethylene oxide group portion per vibration suppressor molecule and the mass concentration of the vibration suppressor in the polishing composition (hereinafter referred to as "W EO ⁇ concentration" Notation) is 8.0 ⁇ 10 ⁇ 2 or more.
  • the mass concentration of the vibration suppressing agent is a value obtained by dividing the mass of the vibration suppressing agent in the polishing composition by the mass of the entire polishing composition (after dilution).
  • the vibration suppression effect can not be obtained even if the molar concentration of the vibration suppressor is 6.9 ⁇ 10 ⁇ 10 mol / g or more.
  • the lower limit of W EO ⁇ concentration is preferably 1.0 ⁇ 10 ⁇ 1 , more preferably 2.0 ⁇ 10 ⁇ 1 .
  • the upper limit of W EO ⁇ concentration is preferably 2.0, more preferably 1.5.
  • the ratio of the weight average molecular weight of the ethylene oxide group to the alkylene oxide group (hereinafter referred to as “W EO / W AO ”) of the vibration suppressor is 80% or more. If W EO / W AO is less than 80%, the shape of the laser mark of the semiconductor wafer after polishing is significantly deteriorated. W EO / W AO is preferably 90% or more.
  • the polishing composition according to the present embodiment may further contain a pH adjuster.
  • the pH of the polishing composition according to the present embodiment is preferably 8.0 to 12.0.
  • the polishing composition according to the present embodiment may optionally contain other compounding agents generally known in the field of polishing compositions, in addition to the above.
  • the polishing composition according to the present embodiment is prepared by appropriately mixing colloidal silica, a water-soluble polymer, a basic compound, a vibration inhibitor and other compounding materials and adding water.
  • the polishing composition according to the present embodiment is prepared by sequentially mixing colloidal silica, a water-soluble polymer, a basic compound, a vibration suppressor and other compounding materials into water.
  • a means for mixing these components means commonly used in the technical field of polishing compositions such as homogenizers, ultrasonic waves and the like are used.
  • the polishing composition described above is used for polishing a semiconductor wafer after being diluted with water so as to have an appropriate concentration.
  • the polishing composition according to the present embodiment can be suitably used for double-sided polishing of a silicon wafer.
  • the polishing composition according to the present embodiment is particularly suitable for double-side polishing of a silicon wafer using a carrier of glass epoxy resin.
  • the compounding amounts in Table 1 are all before dilution (stock solution) and the balance is water.
  • the polishing composition of Comparative Example 1 does not contain a polymer corresponding to a vibration suppressor.
  • the colloidal silica used had a secondary average particle size of 70 nm.
  • HEC used had a weight average molecular weight of 500,000.
  • polyhydric alcohol polyoxyethylene methyl glucoside having a weight average molecular weight of 634 was used.
  • Table 2 shows the molar concentrations of the vibration suppressor in the polishing composition after 41-fold dilution, W EO ⁇ concentration, and W EO / W AO , and the vibration measurement test 1, the vibration measurement test 2, and the laser mark measurement test. Show the results.
  • the column of “laser mark” in Table 2 describes the result of the laser mark test.
  • the numerical value in the same column is positive, it indicates that the edge portion of the laser mark after polishing is a projecting shape.
  • the numerical values in the same column are values standardized in the case of Comparative Example 2 as 100.
  • the polishing composition of Comparative Example 1 did not contain a vibration suppressor. Therefore, vibration of the device occurred.
  • the polishing compositions of Comparative Examples 2 to 4 had low concentrations of W EO . Therefore, vibration of the device occurred. In addition, since the W EO / W AO was low, the shape of the laser mark also deteriorated.
  • the polishing compositions of Comparative Examples 5 and 6 had low W EO / W AO . Therefore, the shape of the laser mark deteriorated.
  • the polishing compositions of Comparative Examples 7 to 9 had low molar concentrations of the vibration suppressor. Therefore, vibration of the device occurred.
  • the polishing compositions of Comparative Examples 10 to 12 had low W EO ⁇ concentrations. Therefore, vibration of the device occurred.
  • FIG. 1 is a scatter diagram in which the abscissa represents the molar concentration of the vibration suppressor and the ordinate represents the W EO concentration.
  • the white marks indicate that no vibration occurred, and the solid marks indicate that a vibration occurred.
  • the vibration of the apparatus can be suppressed if the molar concentration is 6.9 ⁇ 10 ⁇ 10 mol / g or more and the W EO ⁇ concentration is 8.0 ⁇ 10 ⁇ 2 or more.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
PCT/JP2018/047029 2017-12-27 2018-12-20 研磨用組成物 WO2019131450A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201880084112.6A CN111512419B (zh) 2017-12-27 2018-12-20 研磨用组合物
SG11202004613WA SG11202004613WA (en) 2017-12-27 2018-12-20 Polishing composition
DE112018006724.6T DE112018006724T5 (de) 2017-12-27 2018-12-20 Polierzusammensetzung
KR1020207018424A KR20200093607A (ko) 2017-12-27 2018-12-20 연마용 조성물

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017252313A JP6891107B2 (ja) 2017-12-27 2017-12-27 研磨用組成物
JP2017-252313 2017-12-27

Publications (1)

Publication Number Publication Date
WO2019131450A1 true WO2019131450A1 (ja) 2019-07-04

Family

ID=67067368

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/047029 WO2019131450A1 (ja) 2017-12-27 2018-12-20 研磨用組成物

Country Status (7)

Country Link
JP (1) JP6891107B2 (zh)
KR (1) KR20200093607A (zh)
CN (1) CN111512419B (zh)
DE (1) DE112018006724T5 (zh)
SG (1) SG11202004613WA (zh)
TW (1) TWI783105B (zh)
WO (1) WO2019131450A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114846109A (zh) * 2019-12-24 2022-08-02 霓达杜邦股份有限公司 研磨用组合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015174918A (ja) * 2014-03-14 2015-10-05 ニッタ・ハース株式会社 研磨用組成物
JP2016124943A (ja) * 2014-12-26 2016-07-11 ニッタ・ハース株式会社 研磨用組成物
WO2017150118A1 (ja) * 2016-02-29 2017-09-08 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP4606733B2 (ja) * 2003-12-22 2011-01-05 東洋ゴム工業株式会社 研磨パッドおよび半導体ウエハの研磨方法
JP2007214205A (ja) * 2006-02-07 2007-08-23 Fujimi Inc 研磨用組成物
JP5492603B2 (ja) * 2010-03-02 2014-05-14 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP6817186B6 (ja) * 2014-07-15 2021-02-10 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ 化学機械研磨（ｃｍｐ）組成物
JP6669331B2 (ja) * 2015-05-19 2020-03-18 昭和電工株式会社 研磨組成物、及びその研磨組成物を用いた研磨方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015174918A (ja) * 2014-03-14 2015-10-05 ニッタ・ハース株式会社 研磨用組成物
JP2016124943A (ja) * 2014-12-26 2016-07-11 ニッタ・ハース株式会社 研磨用組成物
WO2017150118A1 (ja) * 2016-02-29 2017-09-08 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114846109A (zh) * 2019-12-24 2022-08-02 霓达杜邦股份有限公司 研磨用组合物
CN114846109B (zh) * 2019-12-24 2024-06-07 霓达杜邦股份有限公司 研磨用组合物

Also Published As

Publication number Publication date
CN111512419B (zh) 2024-05-28
TW201930541A (zh) 2019-08-01
JP6891107B2 (ja) 2021-06-18
DE112018006724T5 (de) 2020-09-10
TWI783105B (zh) 2022-11-11
JP2019117907A (ja) 2019-07-18
CN111512419A (zh) 2020-08-07
SG11202004613WA (en) 2020-06-29
KR20200093607A (ko) 2020-08-05

Similar Documents

Publication Publication Date Title
CN111527589B (zh) 研磨用组合物
JP7061969B2 (ja) 研磨用組成物及び研磨方法
JP5939578B2 (ja) 研磨用組成物およびそれを用いた研磨方法
JP7340335B2 (ja) 研磨用組成物
WO2019131450A1 (ja) 研磨用組成物
CN113227310B (zh) 研磨用组合物
JP7433042B2 (ja) 研磨用組成物
JP2021106246A (ja) 研磨用組成物
KR102718153B1 (ko) 연마용 조성물
JP7512035B2 (ja) 研磨用組成物
WO2022137897A1 (ja) 研磨用組成物及びシリコンウェーハの研磨方法
TWI833865B (zh) 研磨用組合物
JP7158280B2 (ja) 半導体研磨用組成物
JP2022099607A (ja) 研磨用組成物

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18897139

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20207018424

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 18897139

Country of ref document: EP

Kind code of ref document: A1