WO2019119788A1 - 薄膜组件及其制备方法、包括薄膜组件的异质结电池 - Google Patents

薄膜组件及其制备方法、包括薄膜组件的异质结电池 Download PDF

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WO2019119788A1
WO2019119788A1 PCT/CN2018/095796 CN2018095796W WO2019119788A1 WO 2019119788 A1 WO2019119788 A1 WO 2019119788A1 CN 2018095796 W CN2018095796 W CN 2018095796W WO 2019119788 A1 WO2019119788 A1 WO 2019119788A1
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ito film
film
layer
weight
ito
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崔鸽
何永才
郁操
张津燕
徐希翔
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君泰创新（北京）科技有限公司
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Priority claimed from CN201721807096.8U external-priority patent/CN207765182U/zh
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Abstract

本公开提供了一种薄膜组件及其制备方法、包括薄膜组件的异质结电池。该薄膜组件包括叠加在一起的至少两层透明导电氧化物薄膜，所述至少两层透明导电氧化物薄膜均为ITO薄膜，其中，第一层ITO薄膜的锡的掺量为10-15重量％，第二层ITO薄膜的锡的掺量≥5重量％且＜10重量％。

Description

薄膜组件及其制备方法、包括薄膜组件的异质结电池
相关申请的交叉引用
本申请要求2017年12月21日在中国国家知识产权局提交的中国专利申请No.201711395346.6和No.201721807096.8的优先权，这些申请的全部内容以引用方式并入本文。
技术领域
本公开涉及太阳能电池工艺技术领域，并且具体涉及一种薄膜组件及其制备方法、包括薄膜组件的异质结电池。
背景技术
氧化铟锡薄膜(Indium Tin Oxide Film，简称ITO薄膜)由于具有低电阻率、高可见光透过率等优良的物理特性，被广泛应用于异质结(Hetero-junction with Intrinsic Thin layer)太阳能电池(简称异质结电池或HIT电池或HJT电池)的透明导电氧化物薄膜层。
ITO薄膜在HJT电池中起着导电和减反射膜的作用。目前广泛使用的ITO薄膜均为单层膜。作为减反射膜，传统的1/4波长ITO单层膜仅对特定波长的小角度入射有很好的减反射效果，因此这种单层膜不能完全满足HJT电池对更大波长范围和更大入射角度的光的减反射要求。
发明内容
为了至少部分解决现有技术中存在的技术问题而完成了本公开，本公开提供了一种性能得到改善的HJT电池和能够实现HJT电池性能改善的薄膜组件及其制备方法。
根据本公开的一个方面，提供了一种薄膜组件，所述薄膜组件包括叠加 在一起的至少两层透明导电氧化物薄膜，所述至少两层透明导电氧化物薄膜均为ITO薄膜，其中，第一层ITO薄膜的锡的掺量为10-15重量％，第二层ITO薄膜的锡的掺量≥5重量％且＜10重量％。
所述薄膜组件还可以包括第三层ITO薄膜，所述第一层ITO薄膜、所述第二层ITO薄膜和所述第三层ITO薄膜按顺序设置，所述第三层ITO薄膜的锡的掺量≥1重量％且＜5重量％，或为10-15重量％。
所述第一层ITO薄膜的锡的掺量可以为10重量％，所述第二层ITO薄膜的锡的掺量可以为5重量％，所述第三层ITO薄膜的锡的掺量可以为3重量％。
所述薄膜组件还可以包括第四层ITO薄膜，所述第一层ITO薄膜、所述第二层ITO薄膜、所述第三层ITO薄膜和所述第四层ITO薄膜按顺序设置，所述第四层ITO薄膜的锡的掺量为10-15重量％。
所述第一层ITO薄膜的锡的掺量可以为10重量％，所述第二层ITO薄膜的锡的掺量可以为5重量％，所述第三层ITO薄膜的锡的掺量可以为3重量％，所述第四层ITO薄膜的锡的掺量可以为10重量％。
每一层ITO薄膜的厚度可以在10-50nm的范围内。
每一层ITO薄膜的折射率n可以在1.8-2.0的范围内，禁带宽度可以在3.0-4.6eV的范围内，载流子浓度可以在(1-10)×10 20cm -3的范围内，载流子迁移率可以在10-50cm 2/vs的范围内。
根据本公开的另一个方面，提供了一种上述薄膜组件的制备方法，包括：在真空条件下连续制备多层ITO薄膜。
在真空条件下连续制备多层ITO薄膜的步骤可以包括：采用磁控溅射法在真空条件下连续制备多层ITO薄膜，其中，所述磁控溅射法采用的气体为氧气与氩气的混合气，并且氧气与氩气的体积流量比为0-2∶98，溅射功率为2-8kW，制备过程所采用的腔室的本底真空度控制在≥5×10 -4Pa的范围内。
根据本公开的又一个方面，提供了一种异质结电池，所述异质结电池包括上述薄膜组件。
所述异质结电池的一面可以包括由叠加在一起的至少三层ITO薄膜构成 的第一薄膜组件，另一面可以包括由叠加在一起的至少两层ITO薄膜构成的第二薄膜组件。
所述异质结电池还可以包括晶体硅层、第一本征层、第二本征层、第一掺杂层、第二掺杂层、第一栅线和第二栅线，所述晶体硅层具有彼此背对的第一表面和第二表面；
所述第一薄膜组件设置有四层ITO薄膜，所述第二薄膜组件设置有三层ITO薄膜；
所述第一本征层、所述第一掺杂层、所述第一薄膜组件的第四层ITO薄膜、第三层ITO薄膜、第二层ITO薄膜、第一层ITO薄膜和所述第一栅线可以按从内到外的顺序依次设置在所述晶体硅层的第一表面上；
所述第二本征层、所述第二掺杂层、所述第二薄膜组件的第三层ITO薄膜、第二层ITO薄膜、第一层ITO薄膜和所述第二栅线可以按从内到外的顺序依次设置在所述晶体硅层的第二表面上。
所述第一薄膜组件的第一层ITO薄膜的锡的掺量可以为10重量％，第二层ITO薄膜的锡的掺量可以为5重量％，第三层ITO薄膜的锡的掺量可以为3重量％，第四层ITO薄膜的锡的掺量可以为10重量％；
所述第二薄膜组件的第一层ITO薄膜的锡的掺量可以为10重量％，第二层ITO薄膜的锡的掺量可以为5重量％，第三层ITO薄膜的锡的掺量可以为3重量％。
所述晶体硅层可以为n型晶体硅层或P型晶体硅层；并且
所述第一掺杂层可以为n型掺杂层，所述第二掺杂层可以为p型掺杂层。
与所述第二掺杂层接触的所述第二薄膜组件的所述第三层ITO薄膜的功函数可以高于与所述第一掺杂层接触的所述第一薄膜组件的所述第四层ITO薄膜的功函数。
本公开的申请人发现，ITO薄膜的光电性能，如折射率、功函数与p型掺杂层、n型掺杂层的匹配，直接影响着HJT电池的性能。本公开提供一种包括多层ITO薄膜的薄膜组件，通过逐渐改变各层ITO薄膜中锡的掺杂量， 形成多层阶梯型的ITO减反射薄膜，这改善了薄膜组件的光电性能。相对于单层ITO薄膜，本公开的多层阶梯型的ITO薄膜的优势具体来说就是通过多层阶梯型的ITO结构进一步减少光的损失，同时通过优化的ITO薄膜与p、n型掺杂层的功函数匹配，使与n型掺杂层接触的ITO具有相对低的功函数，而与p型掺杂层接触的ITO具有相对高的功函数，最终提升了HJT电池的各项性能指标。
附图说明
附图用来提供对本公开技术方案的进一步理解，并且构成说明书的一部分，与本公开的示例性实施例一起用于解释本公开的技术方案，并不构成对本公开技术方案的限制。
图1为示出常规HJT电池的结构示意图。
图2为示出根据本公开的示例性实施例的HJT电池的结构示意图。
具体实施方式
为使本公开的目的、技术方案和优点更加清楚明白，下文中将结合附图对本公开的示例性实施例进行详细说明。需要说明的是，在不冲突的情况下，本公开中的示例性实施例及示例性实施例中的特征可以相互任意组合。
第一示例性实施例
根据本公开的一个方面，本示例性实施例提供了一种薄膜组件，该薄膜组件包括叠加在一起的至少两层透明导电氧化物薄膜，该至少两层透明导电氧化物薄膜均为ITO薄膜。具体而言，如图2所示，薄膜组件5包括叠加在一起的四层ITO薄膜，依序为第一层ITO薄膜5-1、第二层ITO薄膜5-2、第三层ITO薄膜5-3、第四层ITO薄膜5-4；其中，所述第一层ITO薄膜5-1的锡的掺量为10重量％，厚度为34nm，当然，所述第一层ITO薄膜5-1的锡的掺量也可以为10-15重量％范围内的任何值；所述第二层ITO薄膜5-2的锡的掺量为5重量％，厚度为34nm，当然，所述第二层ITO薄膜5-2的锡的掺量也可以为大于或等于5重量％且小于10重量％范围内的任何值；所述第三层ITO薄膜5-3的锡的掺量为3重量％，厚度为34nm，当然，所述第三层 ITO薄膜5-3的锡的掺量也可以为大于或等于1重量％且小于5重量％范围内的任何值；所述第四层ITO薄膜5-4的锡的掺量为10重量％，厚度为10nm，当然，所述第四层ITO薄膜5-4的锡的掺量也可以为10-15重量％范围内的任何值。另外，本领域技术人员应当理解的是，上述各层ITO薄膜的厚度的值不限于上述列出的值，也可以为15-50nm范围内的任何值。
按照下述方法制备所述薄膜组件5：
(1)选择衬底(已沉积两层本征层2、2’和两层掺杂层3、4的晶体硅片1)；
(2)将真空腔室的真空度调节为5×10 -4Pa，按照2∶98的体积流量比向真空腔室中通入氧气和氩气，溅射功率为4kW，采用磁控溅射法在所述衬底的第一表面上沉积所述第四层ITO薄膜5-4；
(3)将真空腔室的真空度维持为5×10 -4Pa，按照5∶95的体积流量比向真空腔室中通入氧气和氩气，溅射功率为4kw，继续在真空腔室中沉积所述第三层ITO薄膜5-3；
(4)将真空腔室的真空度维持为5×10 -4Pa，按照6∶94的体积流量比向真空腔室中通入氧气和氩气，溅射功率为4kw，继续在真空腔室中沉积所述第二层ITO薄膜5-2；
(5)将真空腔室的真空度维持为5×10 -4Pa，按照2∶98的体积流量比向真空腔室中通入氧气和氩气，溅射功率为4kw，继续在真空腔室中沉积所述第一层ITO薄膜5-1。
需要注意的是，整个沉积过程中不打开真空腔室，连续进行沉积，不能破空，换言之，在真空条件下连续制备多层ITO薄膜。另外，将每一层ITO薄膜的折射率n设定在1.8-2.0的范围内，禁带宽度设定在3.0-4.6eV的范围内，载流子浓度设定在(1-10)×10 20cm -3的范围内，载流子迁移率设定在10-50cm 2/vs的范围内。
本领域技术人员应当理解的是，在上述制备过程中，上述氧气与氩气的体积流量比、溅射功率、真空度不限于上述列出的值，而是可以根据需要选择合适的值，例如，氧气与氩气的体积流量比可以为0-2∶98范围内的任何值， 溅射功率为可以为2-8kW范围内的任何值，制备过程所采用的腔室的本底真空度可以被控制为在≥5×10 -4Pa的范围内。
在本公开的示例性实施例提供的包括多层ITO薄膜的薄膜组件中，通过逐渐改变各层ITO薄膜中锡的掺杂量，形成多层阶梯型的ITO减反射薄膜，这改善了薄膜组件的光电性能。相对于单层ITO薄膜，本公开的多层阶梯型的ITO薄膜的优势在于通过多层阶梯型的ITO结构进一步减少光的损失。
第二示例性实施例
根据本公开的另一个方面，如图2所示，本示例性实施例提供的一种薄膜组件5’包括叠加在一起的三层ITO薄膜，依序为第一层ITO薄膜5-1’、第二层ITO薄膜5-2’、第三层ITO薄膜5-3’，其中，所述第一层ITO薄膜5-1’的锡的掺量为10重量％，厚度为37nm；所述第二层ITO薄膜5-2’的锡的掺量为5重量％，厚度为37nm；所述第三层ITO薄膜5-3’的锡的掺量为3重量％，厚度为37nm。
按照第一示例性实施例中制备所述薄膜组件5的步骤(3)-(5)在第一示例性实施例的衬底的第二表面上继续沉积所述薄膜组件5’的第三层ITO薄膜5-3’、第二层ITO薄膜5-2’和第一层ITO薄膜5-1’。
本领域技术人员应当理解的是，除了上述列出的区别之外，本示例性实施例的薄膜组件5’与第一示例性实施例的薄膜组件5在结构、参数、制备方法方面相同。
第三示例性实施例
如图1所示，HJT电池的基本结构通常包括：晶体硅层1、本征层2、p型掺杂层3、n型掺杂层4、透明导电氧化物薄膜层5、正面栅线6、背面栅线7。这种HJT电池的透明导电氧化物薄膜层5一般为单层膜，但这种单层膜不能完全满足HJT电池对大波长范围和大入射角度的光的减反射要求。
为此，申请人提出了一种新型的HJT电池，其结构如图2所示，即该HJT电池包括n型晶体硅层1、本征层2和2’、p型掺杂层3、n型掺杂层4、第一示例性实施例所述的薄膜组件5、第二示例性实施例所述的薄膜组件5’、正面栅线6和背面栅线7，该n型晶体硅层1具有彼此背对的第一表面和第二表面。 本领域技术人员应当理解的是，晶体硅层1也可以是p型晶体硅层。
在本公开的示例性实施例中，定义n型掺杂层4所在的一面为HJT电池的正面，p型掺杂层3所在的一面为HJT电池的背面。
本征层2、n型掺杂层4、第一示例性实施例所述的薄膜组件5的第四层ITO薄膜5-4、第三层ITO薄膜5-3、第二层ITO薄膜5-2和第一层ITO薄膜5-1和正面栅线6按从内到外的顺序依次设置在n型晶体硅层1的第一表面上。
本征层2’、p型掺杂层3、第二示例性实施例所述的薄膜组件5’的第三层ITO薄膜5-3’、第二层ITO薄膜5-2’、第一层ITO薄膜5-1’和背面栅线7按从内到外的顺序依次设置在晶体硅层1的第二表面上。
这样，如此构造的HJT电池的两侧均可以发电，即本示例性实施例中的HJT电池是双面发电电池。
在本公开的示例性实施例中，与p型掺杂层3接触的第三层ITO薄膜5-3’的功函数高于与n型掺杂层4接触的第四层ITO薄膜5-4的功函数。这样，制备的HJT电池短路电流密度升高，开路电压增加，从而使得电池的转化效率得到有效提升。
另外，关于薄膜组件5和5’的具体构造，可以分别参见上述第一、第二示例性实施例。
在本公开的示例性实施例提供的HJT电池中，通过逐渐改变各层ITO薄膜中锡的掺杂量，形成多层阶梯型的ITO减反射薄膜，这改善了薄膜组件的光电性能。相对于单层ITO薄膜，本公开的多层阶梯型的ITO薄膜的优势在于通过多层阶梯型的ITO结构进一步减少光的损失，同时通过优化的ITO薄膜与p、n型掺杂层的功函数匹配，使与n型掺杂层接触的ITO具有相对低的功函数，而与p型掺杂层接触的ITO具有相对高的功函数，从而提升HJT电池的各项性能指标。
第四示例性实施例
根据本公开的另一个方面，本示例性实施例提供一种HJT电池，本示例性实施例的HJT电池与第三示例性实施例的HJT电池的不同之处仅在于：
薄膜组件5不包括第三层ITO薄膜5-3；薄膜组件5’不包括第三层ITO薄膜5-3’。
本示例性实施例的HJT电池可以取得与第三示例性实施例的HJT电池类似的效果。
可以理解的是，以上实施方式仅仅是为了说明本发明公开的原理而采用的示例性实施方式，然而本发明公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明公开的保护范围。

Claims (15)

  1. 一种薄膜组件，所述薄膜组件包括叠加在一起的至少两层透明导电氧化物薄膜，所述至少两层透明导电氧化物薄膜均为ITO薄膜，其中，第一层ITO薄膜的锡的掺量为10-15重量％，第二层ITO薄膜的锡的掺量≥5重量％且＜10重量％。
  2. 根据权利要求1所述的薄膜组件，还包括第三层ITO薄膜，所述第一层ITO薄膜、所述第二层ITO薄膜和所述第三层ITO薄膜按顺序设置，所述第三层ITO薄膜的锡的掺量≥1重量％且＜5重量％，或为10-15重量％。
  3. 根据权利要求2所述的薄膜组件，其中，所述第一层ITO薄膜的锡的掺量为10重量％，所述第二层ITO薄膜的锡的掺量为5重量％，所述第三层ITO薄膜的锡的掺量为3重量％。
  4. 根据权利要求2所述的薄膜组件，还包括第四层ITO薄膜，所述第一层ITO薄膜、所述第二层ITO薄膜、所述第三层ITO薄膜和所述第四层ITO薄膜按顺序设置，所述第四层ITO薄膜的锡的掺量为10-15重量％。
  5. 根据权利要求4所述的薄膜组件，其中，所述第一层ITO薄膜的锡的掺量为10重量％，所述第二层ITO薄膜的锡的掺量为5重量％，所述第三层ITO薄膜的锡的掺量为3重量％，所述第四层ITO薄膜的锡的掺量为10重量％。
  6. 根据权利要求1-5中任一项所述的薄膜组件，其中，每一层ITO薄膜的厚度在10-50nm的范围内。
  7. 根据权利要求1-6中任一项所述的薄膜组件，其中，每一层ITO薄膜的折射率n在1.8-2.0的范围内，禁带宽度在3.0-4.6eV的范围内，载流子浓度在(1-10)×10 20cm -3的范围内，载流子迁移率在10-50cm 2/vs的范围内。
  8. 一种根据权利要求1-7中任一项所述的薄膜组件的制备方法，包括：在真空条件下连续制备多层ITO薄膜。
  9. 根据权利要求8所述的制备方法，其中，在真空条件下连续制备多层ITO薄膜的步骤包括：采用磁控溅射法在真空条件下连续制备多层ITO薄膜，其中，所述磁控溅射法采用的气体为氧气与氩气的混合气，并且氧气与氩气 的体积流量比为0-2∶98，溅射功率为2-8kW，制备过程所采用的腔室的本底真空度控制在≥5×10 -4Pa的范围内。
  10. 一种异质结电池，所述异质结电池包括根据权利要求1-7中任一项所述的薄膜组件。
  11. 根据权利要求1O所述的异质结电池，其中，所述异质结电池的一面包括由叠加在一起的至少三层ITO薄膜构成的第一薄膜组件，另一面包括由叠加在一起的至少两层ITO薄膜构成的第二薄膜组件。
  12. 根据权利要求11所述的异质结电池，其中，所述异质结电池还包括晶体硅层、第一本征层、第二本征层、第一掺杂层、第二掺杂层、第一栅线和第二栅线，所述晶体硅层具有彼此背对的第一表面和第二表面；
    所述第一薄膜组件设置有四层ITO薄膜，所述第二薄膜组件设置有三层ITO薄膜；
    所述第一本征层、所述第一掺杂层、所述第一薄膜组件的第四层ITO薄膜、第三层ITO薄膜、第二层ITO薄膜、第一层ITO薄膜和所述第一栅线按从内到外的顺序依次设置在所述晶体硅层的第一表面上；
    所述第二本征层、所述第二掺杂层、所述第二薄膜组件的第三层ITO薄膜、第二层ITO薄膜、第一层ITO薄膜和所述第二栅线按从内到外的顺序依次设置在所述晶体硅层的第二表面上。
  13. 根据权利要求12所述的异质结电池，其中，所述第一薄膜组件的第一层ITO薄膜的锡的掺量为10重量％，第二层ITO薄膜的锡的掺量为5重量％，第三层ITO薄膜的锡的掺量为3重量％，第四层ITO薄膜的锡的掺量为10重量％；
    所述第二薄膜组件的第一层ITO薄膜的锡的掺量为10重量％，第二层ITO薄膜的锡的掺量为5重量％，第三层ITO薄膜的锡的掺量为3重量％。
  14. 根据权利要求12或13所述的异质结电池，其中，所述晶体硅层为n型晶体硅层或P型晶体硅层；并且
    所述第一掺杂层为n型掺杂层，所述第二掺杂层为p型掺杂层。
  15. 根据权利要求14所述的异质结电池，其中，与所述第二掺杂层接触的所述第二薄膜组件的所述第三层ITO薄膜的功函数高于与所述第一掺杂层接触的所述第一薄膜组件的所述第四层ITO薄膜的功函数。
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