WO2019100425A1 - 一种薄膜晶体管及其制备方法 - Google Patents

一种薄膜晶体管及其制备方法 Download PDF

Info

Publication number
WO2019100425A1
WO2019100425A1 PCT/CN2017/113533 CN2017113533W WO2019100425A1 WO 2019100425 A1 WO2019100425 A1 WO 2019100425A1 CN 2017113533 W CN2017113533 W CN 2017113533W WO 2019100425 A1 WO2019100425 A1 WO 2019100425A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent
source
drain
active layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/113533
Other languages
English (en)
French (fr)
Inventor
谢华飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/741,116 priority Critical patent/US10777662B2/en
Publication of WO2019100425A1 publication Critical patent/WO2019100425A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment

Definitions

  • the present invention relates to the field of thin film transistors, and in particular to a thin film transistor and a method of fabricating the same.
  • IGZO indium gallium zinc oxide
  • the carbon atoms are sp2 hybridized into a hexagonal ring-shaped sheet structure, so that they have excellent electrical properties, mechanical properties and chemical stability, and can be applied to high frequencies.
  • the device which improves the frequency response range of the device, can also be used to replace the conventional silicon-based semiconductor device to form a thin film transistor with high mobility, transparent, and flexible crimp.
  • carbon materials such as carbon nanotubes and graphene have high mobility, high optical transmittance, long-term electrical stability, and good mechanical bending properties. The advantages have obvious advantages in the application of flexible transparent thin film transistors.
  • carbon materials such as carbon nanotubes and graphene are affected by factors such as a preparation method, a dispersion solvent, a purity of a semiconductor, and a film formation method, so that carbon materials such as carbon nanotubes and graphene are formed.
  • the work function of the source layer fluctuates between 4.2 eV and 5.2 eV.
  • the active layer and the conductive metal work function match to reduce the contact resistance to form an ohmic contact is a guarantee of excellent performance of the transistor device, but the contact between the active layer formed by the carbon material such as carbon nanotubes and graphene and the metal electrode is not perfect ohmic Contact, for example, metal titanium Ti, metal palladium Pd, metal gold Au, and metal platinum Pt, etc., are in contact with the carbon nanotubes, and their work functions are close to those of the carbon nanotubes, even if the contact resistance of the metal platinum Pt and the carbon nanotubes is the smallest. But the barrier still exists. Therefore, it is of great significance to use a conductive metal oxide with the same work function adjustable (work function between 4.0eV and 6.1eV) for work function matching.
  • work function adjustable work function between 4.0eV and 6.1eV
  • the technical problem to be solved by the embodiments of the present invention is to provide a thin film transistor and a method for fabricating the same, which can improve the performance of the carbon-based thin film transistor device by adjusting the work function of the contact surface between the conductive metal and the active layer, reducing the contact resistance.
  • an embodiment of the present invention provides a method for fabricating a thin film transistor, wherein the method includes the following steps:
  • Step S11 selecting a substrate, and above the selected substrate, sequentially forming a bottom gate, a gate insulating layer and a source drain from bottom to top; wherein the source and drain adopt a work function
  • the conductive metal oxide is a metal conducting electrode
  • Step S12 rinsing and drying the source and drain electrodes of the selected substrate, and after the blown dry source and drain electrodes are subjected to ozone cleaning for a certain period of time under predetermined illumination conditions, the source and drain electrodes after the ozone cleaning Engaging with an oxygen plasma for a period of time, and further forming an active layer prepared from a carbon material over the source drain after the oxygen plasma bombardment;
  • Step S13 after the preparation of the active layer is completed, and forming a passivation layer over the active layer.
  • the step S11 specifically includes:
  • a conductive metal oxide having a thickness value of a first threshold is deposited by RF magnetron sputtering on a substrate made of the selected silicide. a bottom gate, and then depositing a layer of silicon dioxide having a thickness value as a second threshold as a gate insulating layer by plasma enhanced chemical vapor deposition;
  • a conductive metal oxide having a thickness value of a third threshold is deposited by magnetron sputtering as a source drain, and then coated.
  • the source drain pattern is prepared by fabric photoresist, exposure, etching, and photoresist removal.
  • the step S12 specifically includes:
  • the source and drain electrodes are subjected to ozone cleaning for 60 seconds under ultraviolet light, and oxygen plasma is applied to the source and drain of the ozone cleaning before film formation of the active layer prepared from the semiconductor carbon nanotubes or silicon carbide. Body bombardment for 60 seconds;
  • the step S13 specifically includes:
  • the selected substrate is a transparent substrate made of quartz or glass, and a transparent bottom gate, a transparent gate insulating layer, a transparent source and drain, a transparent active layer and a transparent passivation layer are formed on the corresponding upper surface. ;among them,
  • the transparent gate insulating layer and the transparent passivation layer are both made of a transparent insulating material including silicon dioxide, graphene oxide, silicon nitride, aluminum oxide, and an organic transparent insulating material. ;
  • the transparent bottom gate and the transparent source and drain both adopt a transparent conductive metal oxide with adjustable work function as a metal conductive electrode, and the transparent conductive metal oxide comprises indium tin oxide, zinc aluminum oxide, and tin oxide fluoride. , zinc gallium oxide and zinc tin oxide;
  • the transparent active layer is made of semiconductor carbon nanotubes or silicon carbide.
  • the method further comprises:
  • a transparent conductive metal oxide having a thickness value of a seventh threshold is deposited as a transparent top gate by RF magnetron sputtering.
  • an embodiment of the present invention further provides a method for fabricating another thin film transistor, wherein the method includes the following steps:
  • Step S21 selecting a substrate, and forming a bottom gate, a gate insulating layer and a source and drain respectively from bottom to top above the selected substrate; wherein the source and drain adopt a work function
  • the conductive metal oxide is a metal conducting electrode
  • Step S22 rinsing and drying the source and drain electrodes of the selected substrate, and after the blown dry source and drain electrodes are subjected to ozone cleaning for a certain period of time under predetermined illumination conditions, the source and drain electrodes after the ozone cleaning Engaging with an oxygen plasma for a period of time, and further forming an active layer prepared from a carbon material over the source drain after the oxygen plasma bombardment;
  • Step S23 after the preparation of the active layer is completed, and forming a passivation layer over the active layer;
  • the step S21 specifically includes:
  • the substrate made of the selected plastic is placed in acetone and isopropanol, ultrasonically cleaned, and dried with nitrogen;
  • a patterned photoresist is formed by ultraviolet lithography on a substrate made of the selected plastic, and a conductive metal oxide having a thickness value of a fourth threshold is deposited as a bottom gate by RF magnetron sputtering. Then, by removing the photoresist, the bottom gate is patterned, and then atomic force deposition technology Depositing a non-transparent insulating material having a thickness value as a fifth threshold as a gate insulating layer, and patterning the gate insulating layer by ultraviolet lithography and phosphoric acid wet etching;
  • a conductive metal oxide having a thickness value of a sixth threshold is deposited by magnetron sputtering as a source and drain, and then coated.
  • the photoresist is patterned by UV lithography, the exposed photoresist is wet-etched with phosphoric acid, and the unexposed conductive metal oxide is further photoresisted to prepare a source drain. pattern.
  • the step S22 specifically includes:
  • the source and the drain are subjected to ozone cleaning under ultraviolet light for 60 seconds, and the source and drain of the ozone cleaning are bombarded with oxygen plasma for 60 seconds before film formation of the active layer prepared by graphene;
  • the graphene grown on the copper foil is transferred to the source and drain of the oxygen plasma bombardment by a polymethyl methacrylate transfer technique to form a thin film, and then the photoresist is coated on the graphene. Above the formed film, and etching the remaining portion of the thin film formed by the graphene with oxygen ions, except for the channel portion of the transistor, continuing to remove the photoresist above the channel portion of the transistor in the film formed by the graphene, That is, an active layer prepared from graphene is obtained.
  • the step S23 specifically includes:
  • a certain thickness of silica is covered by a chemical vapor deposition method as a passivation layer.
  • the selected substrate is a transparent substrate made of transparent plastic, and correspondingly formed with a transparent bottom gate, a transparent gate insulating layer, a transparent source and drain, a transparent active layer and a transparent passivation layer; among them,
  • the transparent gate insulating layer and the transparent passivation layer are both made of a transparent insulating material including silicon dioxide, graphene oxide, silicon nitride, aluminum oxide, and organic Transparent insulating material;
  • the transparent bottom gate and the transparent source and drain both adopt a transparent conductive metal oxide with adjustable work function as a metal conductive electrode, and the transparent conductive metal oxide comprises indium tin oxide, zinc aluminum oxide, and tin oxide fluoride. , zinc gallium oxide and zinc tin oxide;
  • the transparent active layer is made of graphene.
  • the method further comprises:
  • a transparent conductive metal oxide having a thickness value of a seventh threshold is deposited as a transparent top gate by RF magnetron sputtering.
  • the embodiment of the present invention further provides a method for fabricating a thin film transistor, wherein the method includes the following steps:
  • Step S31 selecting a substrate, and forming a source and a drain over the selected substrate; wherein, the source and the drain each adopt a conductive metal oxide with a work function adjustable as a metal conductive electrode;
  • Step S32 rinsing and drying the source and drain electrodes of the selected substrate, and after the dried source and drain electrodes are subjected to ozone cleaning for a certain time under predetermined illumination conditions, the source and drain electrodes after the ozone cleaning Engaging with an oxygen plasma for a period of time, and further forming an active layer prepared from a carbon material over the source drain after the oxygen plasma bombardment;
  • Step S33 after the preparation of the active layer is completed, and above the active layer, a passivation layer and a top gate are respectively formed from bottom to top.
  • the step S31 specifically includes:
  • a conductive metal oxide having a thickness value of a third threshold is deposited as a source by magnetron sputtering on a substrate made of the selected silicide.
  • the drain is further prepared by applying photoresist, exposing, etching, and photoresist removing the source drain pattern.
  • the step S32 specifically includes:
  • the source and drain electrodes are subjected to ozone cleaning for 60 seconds under ultraviolet light, and are to be treated by semiconductor carbon nanotubes or Before the active layer prepared by the silicon carbide is formed into a film, the source and drain of the ozone cleaning are bombarded with oxygen plasma for 60 seconds;
  • the step S33 specifically includes:
  • a certain thickness is covered by chemical vapor deposition.
  • the value of silicon dioxide is used as a passivation layer, and further, above the passivation layer, a conductive metal oxide having a thickness value of a seventh threshold is deposited as a top gate by RF magnetron sputtering.
  • the selected substrate is a transparent substrate made of quartz or glass, and a transparent source and drain, a transparent active layer, a transparent passivation layer and a transparent top gate are formed correspondingly above;
  • the transparent passivation layer is made of a transparent insulating material, which comprises silicon dioxide, graphene oxide, silicon nitride, aluminum oxide, and an organic transparent insulating material;
  • the transparent source drain adopts a transparent conductive metal oxide with adjustable work function as a metal conductive electrode
  • the transparent active layer is made of semiconductor carbon nanotubes or silicon carbide
  • the transparent top gate adopts a transparent conductive metal oxide whose work function is adjustable or not adjustable as a metal conductive electrode
  • the transparent conductive metal oxide comprises indium tin oxide, zinc aluminum oxide, tin oxide fluorine, zinc gallium oxide and zinc tin oxide.
  • the step S31 further includes:
  • a conductive metal oxide having a thickness value of a third threshold is deposited as a source and drain by magnetron sputtering on a substrate made of the selected plastic.
  • the source drain pattern is prepared by coating photoresist, exposing, etching, and photoresist removal.
  • the step S32 further includes:
  • the source and the drain are subjected to ozone cleaning under ultraviolet light for 60 seconds, and the source and drain of the ozone cleaning are bombarded with oxygen plasma for 60 seconds before film formation of the active layer prepared by graphene;
  • the graphene grown on the copper foil is transferred to the source and drain of the oxygen plasma bombardment by a polymethyl methacrylate transfer technique to form a thin film, and then the photoresist is coated on the graphene. Above the formed film, and etching the remaining portion of the thin film formed by the graphene with oxygen ions, except for the channel portion of the transistor, continuing to remove the photoresist above the channel portion of the transistor in the film formed by the graphene, That is, an active layer prepared from graphene is obtained.
  • the step S33 further includes:
  • a certain thickness of silicon dioxide is covered by the chemical vapor deposition method as a passivation layer. And further, above the passivation layer, a conductive metal oxide having a thickness value of a seventh threshold is deposited as a top gate by RF magnetron sputtering.
  • the selected substrate is a transparent substrate made of transparent plastic, and correspondingly formed with a transparent source and drain, a transparent active layer, a transparent passivation layer and a transparent top gate;
  • the transparent passivation layer is made of a transparent insulating material, which comprises silicon dioxide, graphene oxide, silicon nitride, aluminum oxide, and an organic transparent insulating material;
  • the transparent source drain adopts a transparent conductive metal oxide with adjustable work function as a metal conductive electrode
  • the transparent active layer is made of graphene
  • the transparent top gate is made of a transparent conductive metal oxide whose work function is adjustable or not adjustable.
  • Metal conductive electrode
  • the transparent conductive metal oxide comprises indium tin oxide, zinc aluminum oxide, tin oxide fluorine, zinc gallium oxide and zinc tin oxide.
  • the invention improves the surface of the conductive metal oxide by adding two steps of ozone cleaning and oxygen plasma treatment to the metal oxide conductive layer (ie, source and drain) in the mature process and process of the existing amorphous silicon thin film transistor.
  • the work function makes good ohmic contact with the carbon material active layer, thereby improving the performance of the carbon-based thin film transistor device, and the invention can be applied to the preparation of a non-transparent carbon-based material thin film transistor, and can also be applied to full transparency. Preparation of a carbon-based material thin film transistor.
  • FIG. 1 is a flow chart of a method for fabricating a thin film transistor according to a first embodiment of the present invention
  • FIG. 2 is a flowchart of a method for fabricating another thin film transistor according to Embodiment 2 of the present invention.
  • FIG. 3 is a flowchart of still another method for fabricating a thin film transistor according to Embodiment 3 of the present invention.
  • FIG. 4 is a flowchart of still another method for fabricating a thin film transistor according to Embodiment 4 of the present invention.
  • FIG. 5 is a flowchart of still another method for fabricating a thin film transistor according to Embodiment 5 of the present invention.
  • FIG. 6 is a flowchart of still another method for fabricating a thin film transistor according to Embodiment 6 of the present invention.
  • FIG. 7 is a partial cross-sectional view showing a thin film transistor according to Embodiment 8 of the present invention.
  • Embodiment 8 is a partial cross-sectional view showing another thin film transistor according to Embodiment 10 of the present invention.
  • FIG. 9 is a partial cross-sectional view showing still another thin film transistor according to Embodiment 12 of the present invention.
  • a method for fabricating a thin film transistor according to a first embodiment of the present invention which illustrates a method for fabricating a non-transparent bottom-gate structure carbon-based material thin film transistor, specifically includes the following steps:
  • Step S101 selecting a substrate, and forming a bottom gate, a gate insulating layer and a source and drain respectively from bottom to top above the selected substrate; wherein the source and drain adopt a work function
  • the conductive metal oxide is a metal conducting electrode
  • Step S102 rinsing and drying the source and drain electrodes of the selected substrate, and after the blown dry source and drain electrodes are subjected to ozone cleaning for a certain time under predetermined illumination conditions, the source and drain electrodes after the ozone cleaning Engaging with an oxygen plasma for a period of time, and further forming an active layer prepared from a carbon material over the source drain after the oxygen plasma bombardment;
  • Step S103 after the preparation of the active layer is completed, and forming a passivation layer over the active layer.
  • the selected substrate is made of a non-transparent material
  • the gate insulating layer is made of a non-transparent insulating material, and is subjected to plasma enhanced chemical vapor deposition, atomic force deposition, or other techniques.
  • the bottom gate is made of conductive metal oxide or transparent conductive metal oxide as the metal conductive electrode, and is processed by RF magnetron sputtering; and the source and drain are made of conductive metal oxide or transparent with adjustable work function.
  • the conductive metal oxide is a metal conductive electrode, And through the magnetron sputtering process.
  • the bottom gate, the gate insulating layer and the source and drain electrodes prepared above have different preparation methods, as follows:
  • a silicide substrate is first selected, and a 100 nm conductive metal oxide or a transparent conductive metal oxide is deposited as a bottom gate by a radio frequency magnetron sputtering method on the silicide substrate; secondly, a plasma is used.
  • Enhanced chemical vapor deposition using silane and oxygen as raw material gas) to deposit 400 nm non-transparent insulating material as gate insulating layer; then, magnetron sputtering is used to deposit 100 nm work function adjustable conductive metal oxide or transparent A conductive metal oxide serves as a source drain.
  • the plastic substrate is first selected, the selected plastic substrate is placed in acetone and isopropanol, ultrasonically cleaned, and dried with nitrogen; the pattern is formed by ultraviolet lithography over the selected plastic substrate.
  • the photoresist is deposited and a 200 nm conductive metal oxide or a transparent conductive metal oxide is deposited as a bottom gate by RF magnetron sputtering, and then the bottom gate is patterned by photoresist removal, and then deposited by atomic force deposition.
  • a 50 nm non-transparent insulating material is used as the gate insulating layer, and the gate insulating layer is patterned by ultraviolet photolithography and phosphoric acid wet etching.
  • a 100 nm work function adjustable conductivity is deposited by magnetron sputtering.
  • a metal oxide or a transparent conductive metal oxide serves as a source drain.
  • step S102 the source and drain electrodes of the selected substrate are rinsed with acetone, methanol and isopropanol, and the source drain of the rinsed source is blown with a certain concentration (such as a high concentration of a concentration ratio greater than 70%) of nitrogen. Further, the dried source and drain electrodes were subjected to ozone cleaning for 60 seconds under ultraviolet light, and the source and drain electrodes after ozone cleaning were bombarded with oxygen plasma for 60 seconds before the active layer was formed.
  • a certain concentration such as a high concentration of a concentration ratio greater than 70%
  • the ozone cleaning and oxygen plasma treatment include an oxygen plasma bath and an implantation, and the oxygen plasma treatment can clean the surface of the conductive metal oxide on the surface of the conductive metal oxide of the source and drain while making the surface of the conductive metal oxide of the source and drain.
  • the terminal oxygen component increases and the surface polarization increases, thereby regulating the surface work function of the conductive metal oxide.
  • the active layer is made of a carbon material including a semiconductor carbon nanotube, graphene and silicon carbide.
  • the specific method for preparing the active layer is as follows:
  • the source and drain of the oxygen plasma bombardment are immersed in a semiconductor carbon nanotube solution or a silicon carbide solution, so that a thin film is deposited thereon.
  • a semiconductor carbon nanotube solution or a silicon carbide solution Take out and bake at a certain temperature (for example, 150 ° C) for 30 minutes to obtain a carbon nanotube network film or a silicon carbide network film, and then apply the photoresist to the carbon nanotube network film or Above the silicon carbide network-like film, and etching the remaining portion of the carbon nanotube network-like film or the silicon carbide network film except for the channel portion of the transistor with oxygen ions, the carbon nanotube network film or the silicon carbide network is continuously removed.
  • a certain temperature for example, 150 ° C
  • the active layer may be processed according to a process) Adjusted to be transparent or non-transparent;
  • the active layer is prepared by using graphene
  • the graphene grown on the copper foil is transferred to the source and drain of the oxygen plasma bombardment by a polymethyl methacrylate transfer technique to form a film.
  • the film is formed by removing the channel portion of the transistor formed by the graphene.
  • the photoresist is obtained by obtaining an active layer made of graphene (the active layer can be adjusted to be transparent or non-transparent according to the process).
  • step S103 above the active layer prepared by one of the semiconductor carbon nanotubes, silicon carbide, and graphene, a silicon dioxide having a certain thickness value (for example, 500 nm) is covered by chemical vapor deposition as a blunt Layer.
  • a silicon dioxide having a certain thickness value for example, 500 nm
  • a method for fabricating a thin film transistor according to a second embodiment of the present invention which illustrates a method for fabricating a fully transparent bottom gate structure carbon-based material thin film transistor, specifically includes the following steps:
  • Step S201 selecting a substrate made of a transparent material, and sequentially forming a transparent bottom gate, a transparent gate insulating layer, and a transparent source and drain from the bottom to the top of the selected substrate;
  • the transparent source drain adopts a transparent conductive metal oxide with adjustable work function as a metal conductive electrode;
  • Step S202 rinsing and drying the transparent source and drain of the selected substrate, and after the dried transparent source and drain are subjected to ozone cleaning for a certain period of time under predetermined illumination conditions, after the ozone is cleaned
  • the transparent source drain is bombarded with oxygen plasma for a period of time, and further a transparent active layer prepared from a carbon material is formed over the transparent source drain after the oxygen plasma bombardment;
  • Step S203 after the preparation of the transparent active layer is completed, and forming a transparent passivation layer over the transparent active layer.
  • the transparent material of the substrate comprises quartz, glass and transparent plastic; the bottom gate also adopts a transparent conductive metal oxide with the same work function as the transparent source and drain as a metal conductive electrode, and is transparent.
  • the conductive metal oxide comprises indium tin oxide, zinc aluminum oxide, tin oxide fluorine, zinc gallium oxide and zinc tin oxide;
  • the transparent gate insulating layer is made of transparent insulating material, and the transparent insulating material comprises silicon dioxide and graphene oxide. , silicon nitride, aluminum oxide and organic transparent insulating materials.
  • the substrate and the substrate are made of different materials, and the specific preparation methods corresponding to the transparent bottom gate, the transparent gate insulating layer and the transparent source and drain formed on the bottom are also different, as follows:
  • a layer of thickness is deposited by RF magnetron sputtering on a substrate made of selected quartz or glass.
  • a threshold such as 100 nm
  • a plasma enhanced chemical vapor deposition method using silane and oxygen as a raw material gas
  • a second threshold eg, 400 nm
  • Silicon as a transparent gate insulating layer;
  • a layer of indium tin oxide having a thickness value of a third threshold (for example, 500 nm) is deposited by magnetron sputtering as a transparent source.
  • the drain is further coated with a photoresist, exposed, etched, and photoresisted to produce a transparent source and drain pattern.
  • the substrate made of the selected transparent plastic is placed in acetone and isopropyl alcohol, ultrasonically washed, and dried with nitrogen;
  • a patterned photoresist is formed by ultraviolet lithography on a substrate made of a selected transparent plastic, and a layer of indium tin oxide having a thickness value of a fourth threshold (for example, 200 nm) is deposited by RF magnetron sputtering. Transparent bottom gate, and then through the photoresist, the transparent bottom gate is patterned, and then a layer of aluminum oxide having a thickness value of a fifth threshold (such as 50 nm) is deposited by atomic force deposition.
  • a layer of indium tin oxide having a thickness value of a sixth threshold (for example, 500 nm) is deposited by magnetron sputtering as a transparent source and drain.
  • a sixth threshold for example, 500 nm
  • the exposed indium tin oxide is wet-etched with phosphoric acid to further remove the unexposed indium tin oxide.
  • a transparent source drain pattern is prepared.
  • step S202 the transparent source and drain of the selected substrate are immersed in acetone, methanol and isopropanol, and the rinsed transparent source drain is blown with a certain concentration (such as a high concentration of a concentration ratio greater than 70%) of nitrogen. Drying, and further drying the source and drain after drying in an ultraviolet light for 60 seconds, before the transparent active layer is formed, bombarding the transparent source drain after ozone cleaning with oxygen plasma 60 second.
  • the ozone cleaning and oxygen plasma treatment include an oxygen plasma bath and an injection, and the oxygen plasma treatment can clean the surface of the transparent conductive metal oxide on the surface of the transparent conductive metal oxide while transparently conducting the transparent source and the drain.
  • the metal oxide surface has an increased oxygen content at the terminal end and an enhanced surface polarization, thereby regulating the surface work function of the transparent conductive metal oxide.
  • the transparent active layer is made of carbon material, which comprises semiconductor carbon nanotubes, graphene and silicon carbide, and the specific method for preparing the active layer is as follows:
  • a transparent active layer is prepared by using semiconductor carbon nanotubes or silicon carbide
  • the transparent source drain after oxygen plasma bombardment is immersed in a semiconductor carbon nanotube solution or a silicon carbide solution, so that a film is deposited thereon. After that, it is taken out and baked at a certain temperature (for example, 150 ° C) for 30 minutes to obtain a carbon nanotube network-like film or a silicon carbide network-like film, and then coated with a photoresist in the carbon nanotube network.
  • the graphene grown on the copper foil is transferred to a transparent source drain after oxygen plasma bombardment by a polymethyl methacrylate transfer technique to form a thin film. And further removing the transistor channel in the thin film formed by the graphene after coating the photoresist on the graphene-formed film and etching the graphene with oxygen ions to remove the remaining portion of the thin film. Part of the photoresist above, a transparent active layer prepared from graphene is obtained.
  • a silicon dioxide having a certain thickness value (for example, 500 nm) is covered by chemical vapor deposition over the transparent active layer prepared by one of the semiconductor carbon nanotubes, silicon carbide, and graphene.
  • a method for fabricating a thin film transistor according to a third embodiment of the present invention which shows a method for fabricating a non-transparent double-gate structure carbon-based material thin film transistor, specifically includes the following steps:
  • Step S301 selecting a substrate, and forming a bottom gate, a gate insulating layer and a source and drain respectively from bottom to top above the selected substrate; wherein the source and drain adopt a work function
  • the conductive metal oxide is a metal conducting electrode
  • Step S302 rinsing and drying the source and drain electrodes of the selected substrate, and after the blown dry source and drain electrodes are subjected to ozone cleaning for a certain time under predetermined illumination conditions, the source and drain electrodes after the ozone cleaning Engaging with an oxygen plasma for a period of time, and further forming an active layer prepared from a carbon material over the source drain after the oxygen plasma bombardment;
  • Step S303 after the preparation of the active layer is completed, and above the active layer, a passivation layer and a top gate are respectively formed from bottom to top.
  • the method for fabricating the thin film transistor in the second embodiment of the present invention increases the preparation process of the top gate, and the preparation process of the top gate is the same as the bottom gate preparation process.
  • the preparation of the thin film transistor in the second embodiment of the present invention Process for preparing a substrate, a bottom gate, a gate insulating layer, a source drain, an active layer, and a passivation layer, and a substrate, a bottom gate, and a gate in a method for fabricating a thin film transistor according to Embodiment 1 of the present invention
  • the polar insulating layer, the source drain, the active layer and the passivation layer are correspondingly the same, so the preparation process of the specific substrate, the bottom gate, the gate insulating layer, the source drain, the active layer and the passivation layer is referred to the present invention.
  • the related content in the first embodiment will not be repeated here.
  • a method for fabricating a thin film transistor according to a fourth embodiment of the present invention which shows a method for preparing a fully transparent double gate structure carbon-based material thin film transistor, specifically includes the following steps:
  • Step S401 selecting a substrate made of a transparent material, and sequentially forming a transparent bottom gate, a transparent gate insulating layer, and a transparent source and drain from the bottom to the top of the selected substrate;
  • the transparent source drain adopts a transparent conductive metal oxide with adjustable work function as a metal conductive electrode;
  • Step S402 rinsing and drying the transparent source and drain of the selected substrate, and after the dried transparent source drain is subjected to ozone cleaning for a certain period of time under predetermined illumination conditions, transparent to the ozone cleaning
  • the source drain is bombarded with oxygen plasma for a period of time, and further a transparent active layer prepared from a carbon material is formed over the transparent source drain after the oxygen plasma bombardment;
  • Step S403 after the preparation of the transparent active layer is completed, and above the transparent active layer, a transparent passivation layer and a transparent top gate are respectively formed from bottom to top.
  • the transparent top gate adopts a transparent conductive metal oxide as a metal conductive electrode.
  • the method for fabricating the thin film transistor in the fourth embodiment of the present invention increases the preparation process of the transparent top gate, the preparation process of the transparent top gate and the transparent bottom gate
  • the preparation process is the same, as in the method of RF magnetron sputtering, a layer of indium tin oxide having a thickness value of a seventh threshold (for example, 100 nm) is deposited as a transparent top gate, and the preparation method of the thin film transistor in the fourth embodiment of the present invention is lining.
  • Preparation process of bottom, transparent bottom gate, transparent gate insulating layer, transparent source and drain, transparent active layer and transparent passivation layer and substrate, transparent bottom gate in preparation method of thin film transistor in embodiment 2 of the present invention The pole, the transparent gate insulating layer, the transparent source and drain, the transparent active layer and the transparent passivation layer are the same, so the specific substrate, the transparent bottom gate, and the transparent gate
  • the preparation process of the polar insulating layer, the transparent source and the drain, the transparent active layer and the transparent passivation layer refer to the relevant content in the second embodiment of the present invention, and details are not described herein again.
  • a method for fabricating a thin film transistor according to a fifth embodiment of the present invention which illustrates a method for fabricating a non-transparent top-gate structure carbon-based material thin film transistor, specifically includes the following steps:
  • Step S501 selecting a substrate, and forming a source and a drain over the selected substrate; wherein, the source and the drain each adopt a conductive metal oxide with a work function adjustable as a metal conductive electrode;
  • Step S502 rinsing and drying the source and drain electrodes of the selected substrate, and after the blown dry source and drain electrodes are subjected to ozone cleaning for a certain time under predetermined illumination conditions, the source and drain electrodes after the ozone cleaning Engaging with an oxygen plasma for a period of time, and further forming an active layer prepared from a carbon material over the source drain after the oxygen plasma bombardment;
  • Step S503 After the preparation of the active layer is completed, and above the active layer, a passivation layer and a top gate are respectively formed from bottom to top.
  • the method for fabricating the thin film transistor in the fifth embodiment of the present invention omits the preparation process of the bottom gate and the insulating gate layer, and the film in the fifth embodiment of the present invention
  • the preparation process of the active layer, the passivation layer, and the top gate in the method for fabricating the transistor is the same as the active layer, the passivation layer, and the top gate in the method for fabricating the thin film transistor in the third embodiment of the present invention.
  • the preparation process of the source layer, the passivation layer and the top gate refer to the relevant content in the third embodiment of the present invention, and details are not described herein again.
  • step S501 the source and drain electrodes are directly prepared on the substrate. Due to different substrate materials, the source and drain electrodes prepared above are also prepared in different manners, as follows:
  • a silicide (eg, quartz, glass) substrate is selected, and a work function tunable conductive metal oxide is deposited on the silicide substrate by RF magnetron sputtering to a thickness value (eg, 100 nm).
  • a thickness value eg, 100 nm.
  • the material or the transparent conductive metal oxide may be used as the drain source.
  • a plastic substrate is selected, the selected plastic substrate is placed in acetone and isopropanol, ultrasonically cleaned, and dried with nitrogen; the UV-lithographic technique is formed over the selected plastic substrate.
  • a photoresist is deposited by a method of RF magnetron sputtering to deposit a conductive metal oxide or a transparent conductive metal oxide having a certain thickness value (for example, 500 nm) as a source and drain, and then coated with a photoresist. After patterning the photoresist on the coating by ultraviolet lithography, the exposed indium tin oxide is wet-etched with phosphoric acid to further remove the unexposed conductive metal oxide or transparent conductive metal oxide from photoresist. Source drain pattern.
  • a method for fabricating a thin film transistor according to a sixth embodiment of the present invention which shows a method for preparing a fully transparent top gate structure carbon-based material thin film transistor, specifically includes the following steps:
  • Step S601 selecting a substrate, and forming a transparent source and drain on the selected substrate; wherein the transparent source and drain are made of a transparent conductive metal oxide with a work function adjustable as a metal conductive electrode;
  • Step S602 rinsing and drying the transparent source and drain of the selected substrate, and after the dried transparent source and drain are subjected to ozone cleaning for a certain period of time under predetermined illumination conditions, transparent to the ozone cleaning
  • the source drain is bombarded with oxygen plasma for a period of time, and further a transparent active layer prepared from a carbon material is formed over the transparent source drain after the oxygen plasma bombardment;
  • Step S603 after the preparation of the transparent active layer is completed, and above the transparent active layer, a transparent passivation layer and a transparent top gate are respectively formed from bottom to top.
  • the method for fabricating the thin film transistor in the sixth embodiment of the present invention omits the preparation process of the transparent bottom gate and the transparent insulating gate layer, but in the sixth embodiment of the present invention
  • the preparation process of the substrate, the transparent source drain, the transparent active layer, the transparent passivation layer and the transparent top gate in the preparation method of the thin film transistor and the substrate and transparent method in the preparation method of the thin film transistor in the fourth embodiment of the present invention The source drain, the transparent active layer, the transparent passivation layer and the transparent top gate are the same, so the preparation process of the specific substrate, the transparent source drain, the transparent active layer, the transparent passivation layer and the transparent top gate is shown in The related content in the fourth embodiment of the present invention is not described herein again.
  • step S601 the transparent source drain is directly prepared on the substrate. Due to the different substrate materials, the transparent source and drain electrodes prepared above have different preparation methods, as follows:
  • a layer of thickness is deposited by RF magnetron sputtering on a substrate made of selected quartz or glass.
  • An indium tin oxide having an eight threshold for example, 500 nm is used as a transparent source drain, and the transparent source and drain patterns are prepared by coating a photoresist, exposing, etching, and photoresist removing.
  • the substrate made of the selected transparent plastic is placed in acetone and isopropyl alcohol, ultrasonically washed, and dried with nitrogen;
  • a patterned photoresist is formed by ultraviolet lithography on the substrate made of the selected transparent plastic, and a layer of indium tin oxide having a thickness value of ninth threshold (for example, 500 nm) is deposited by using RF magnetron sputtering.
  • the source and the drain are further coated with the photoresist and the photoresist on the coating is patterned by ultraviolet lithography, and the exposed indium tin oxide is wet-etched with phosphoric acid to further remove the unexposed indium tin oxide.
  • the transparent source drain pattern is prepared by a photoresist.
  • a layer of indium tin oxide having a thickness value of a tenth threshold is deposited by a radio frequency magnetron sputtering method as a transparent top gate.
  • the seventh embodiment of the present invention provides a thin film transistor which is prepared by the method for preparing the thin film transistor according to the first embodiment of the present invention.
  • Transparent bottom gate structure carbon-based material thin film transistor is transparent to the first embodiment of the present invention.
  • the eighth embodiment of the present invention provides another thin film transistor which is prepared by the method for preparing the thin film transistor of the second embodiment of the present invention.
  • the thin film transistor is a fully transparent bottom gate structure carbon-based material thin film transistor.
  • the ninth embodiment of the present invention provides a thin film transistor which is prepared by the method for preparing the thin film transistor according to the third embodiment of the present invention.
  • a tenth embodiment of the present invention provides a thin film transistor using the thin film transistor of the fourth embodiment of the present invention.
  • the preparation method is prepared by using a fully transparent double gate structure carbon-based material thin film transistor.
  • the eleventh embodiment of the present invention provides a thin film transistor which is prepared by the method for preparing a thin film transistor according to the fifth embodiment of the present invention.
  • a twelfth embodiment of the present invention provides a thin film transistor which is prepared by using the method for preparing a thin film transistor according to Embodiment 6 of the present invention.
  • the thin film transistor is a fully transparent top gate structure carbon-based material thin film transistor.
  • the present invention improves the oxidation of conductive metals by increasing the ozone cleaning and oxygen plasma treatment of the metal oxide conductive layer (ie, source and drain) in the mature process and process of the existing amorphous silicon thin film transistor.
  • the surface work function of the object makes it form a good ohmic contact with the active layer of the carbon material, thereby improving the performance of the carbon-based thin film transistor device, and the invention can be applied to the preparation of a non-transparent carbon-based material thin film transistor, and is also applicable. In the preparation of a fully transparent carbon-based material thin film transistor.

Landscapes

  • Thin Film Transistor (AREA)

Abstract

一种薄膜晶体管的制备方法，包括选定一衬底（11），并在所选衬底（11）的上方，依序由下往上分别形成底部栅极（12）、栅极绝缘层（13）和源漏极（14）；其中，所述底部栅极（12）和所述源漏极（14）均采用功函数可调的导电金属氧化物为金属导电极；冲洗及吹干所选衬底的源漏极（14），且待对吹干后的源漏极（14）在预定光照条件下进行一定时间臭氧清洗后，对臭氧清洗后的源漏极（14）以氧气等离子体轰击一段时间，并进一步在氧气等离子体轰击后的源漏极（14）上方形成有由碳材料制备出的有源层（15）；待有源层（15）制备完成后，并在有源层（15）上方形成钝化层（16）。该方法能够通过调控导电金属与有源层（15）的接触面功函数，减小接触电阻，改善碳基薄膜晶体管器件性能。

Description

一种薄膜晶体管及其制备方法
本申请要求于2017年11月22日提交中国专利局、申请号为201711175832.7、发明名称为“一种薄膜晶体管及其制备方法”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及薄膜晶体管技术领域，尤其涉及一种薄膜晶体管及其制备方法。
背景技术
目前使用的非晶硅薄膜晶体管、IGZO(indium gallium zinc oxide，铟镓锌氧化物)薄膜晶体管等皆对光敏感，因光照下电学性能会发生漂移和改变，这样就需要在制备过程中以不透光的金属层遮挡有源层来减少光照的影响，使得显示器件开口率大大降低。
鉴于碳纳米管和石墨烯等碳材料中碳原子结构均呈现为碳原子以sp2杂化成六角环形排列的片层结构，因此具有优异的电学性能、力学性能和化学稳定性，可以应用于高频器件，提高器件的频率响应范围，也可代替传统硅基半导体器件，制备成高迁移率、可透明、可柔性卷曲的薄膜晶体管。与传统的硅基半导体和其他III-V族系列半导体相比，碳纳米管和石墨烯等碳材料因高迁移率、高光学透过性、长时间电学稳定性以及良好的机械弯折特性等优点，使得在柔性透明薄膜晶体管的应用上有着明显的优势。
然而，在制备薄膜晶体管时，碳纳米管和石墨烯等碳材料受到制备方法、分散溶剂、半导体纯度高低和成膜方式等因素影响，使得由碳纳米管和石墨烯等碳材料所形成的有源层的功函数在4.2eV～5.2eV之间波动。众所周知， 有源层与导电金属功函数匹配降低接触电阻形成欧姆接触是晶体管器件性能优良的保证，但是由碳纳米管和石墨烯等碳材料形成的有源层与金属电极之间的接触不是完美的欧姆接触，例如采用金属钛Ti、金属钯Pd、金属金Au和金属铂Pt等导电金属与碳纳米管接触，它们的功函数与碳纳米管接近，即便金属铂Pt与碳纳米管的接触电阻最小，但势垒仍然存在。因此，采用同样功函数可调的导电金属氧化物(功函数在4.0eV～6.1eV之间)进行功函数匹配具有重要的意义。
发明内容
本发明实施例所要解决的技术问题在于，提供一种薄膜晶体管及其制备方法，能够通过调控导电金属与有源层的接触面功函数，减小接触电阻，改善碳基薄膜晶体管器件性能。
为了解决上述技术问题，本发明实施例提供了一种薄膜晶体管的制备方法，其中，所述方法包括以下步骤：
步骤S11、选定一衬底，并在所选衬底的上方，依序由下往上分别形成底部栅极、栅极绝缘层和源漏极；其中，所述源漏极采用功函数可调的导电金属氧化物为金属导电极；
步骤S12、冲洗及吹干所选衬底的源漏极，且待对所述吹干后的源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的源漏极上方形成有由碳材料制备出的有源层；
步骤S13、待所述有源层制备完成后，并在所述有源层上方形成钝化层。
其中，所述步骤S11具体包括：
当选定一由硅化物制作而成的衬底时，在所选硅化物制作而成的衬底上方采用射频磁控溅射法沉积出一层厚度值为第一阈值的导电金属氧化物作 为底部栅极，然后采用等离子增强化学气相沉积法沉积出一层厚度值为第二阈值的二氧化硅作为栅极绝缘层；
待所选硅化物制作而成的衬底上方的栅极绝缘层制备完成后，用磁控溅射法沉积出一层厚度值为第三阈值的导电金属氧化物作为源漏极，再通过涂布光刻胶、曝光、蚀刻、去光阻制备出源漏极图案。
其中，所述步骤S12具体包括：
用丙酮、甲醇和异丙醇浸泡冲洗所选硅化物制作而成的衬底的源漏极，并用一定浓度的氮气对所述冲洗后的源漏极吹干，且进一步对所述吹干后的源漏极在有紫外光的条件下进行60秒臭氧清洗，待在由半导体碳纳米管或碳化硅制备出的有源层成膜前，对所述臭氧清洗后的源漏极以氧气等离子体轰击60秒；
将所述氧气等离子体轰击后的源漏极浸泡至半导体碳纳米管溶液或碳化硅溶液中，使得其上方沉积有一层薄膜后，取出在一定温度下烘烤，得到碳纳米管网络状薄膜或碳化硅网络状薄膜，再通过涂布光刻胶于所述碳纳米管网络状薄膜或碳化硅网络状薄膜上方，并用氧离子刻蚀所述碳纳米管网络状薄膜或碳化硅网络状薄膜中除晶体管沟道部分之外的其余部分后，继续去除所述碳纳米管网络状薄膜或碳化硅网络状薄膜中晶体管沟道部分上方的光刻胶，制备出碳纳米管沟道或碳化硅沟道薄膜，即得到由半导体碳纳米管或碳化硅制备出的有源层。
其中，所述步骤S13具体包括：
待所述由半导体碳纳米管或碳化硅制备出的有源层制备完成后，并在所述由半导体碳纳米管或碳化硅制备出的有源层上方，用化学气相沉积法覆盖上一定厚度值的二氧化硅作为钝化层。
其中，所选衬底为采用石英、玻璃制作而成的透明衬底，且其对应上方形成有透明底部栅极、透明栅极绝缘层、透明源漏极、透明有源层和透明钝化层；其中，
所述透明栅极绝缘层和所述透明钝化层均采用透明绝缘材料制作而成，所述透明绝缘材料包括二氧化硅、氧化石墨烯、氮化硅、三氧化二铝和有机透明绝缘材料；
所述透明底部栅极和所述透明源漏极均采用功函数可调的透明导电金属氧化物为金属导电极，且所述透明导电金属氧化物包括氧化铟锡、氧化锌铝、氧化锡氟、氧化锌镓和氧化锌锡；
所述透明有源层采用半导体碳纳米管或碳化硅制作而成。
其中，所述方法进一步包括：
在所述透明钝化层上方，采用射频磁控溅射法沉积出一层厚度值为第七阈值的透明导电金属氧化物作为透明顶部栅极。
相应的，本发明实施例还提供了另一种薄膜晶体管的制备方法，其中，所述方法包括以下步骤：
步骤S21、选定一衬底，并在所选衬底的上方，依序由下往上分别形成底部栅极、栅极绝缘层和源漏极；其中，所述源漏极采用功函数可调的导电金属氧化物为金属导电极；
步骤S22、冲洗及吹干所选衬底的源漏极，且待对所述吹干后的源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的源漏极上方形成有由碳材料制备出的有源层；
步骤S23、待所述有源层制备完成后，并在所述有源层上方形成钝化层；
其中，所述步骤S21具体包括：
当选定一由塑料制作而成的衬底时，将所选塑料制作而成的衬底放置于丙酮和异丙醇中超声清洗后以氮气吹干；
在所选塑料制作而成的衬底上方通过紫外光刻技术形成图案化光阻，并采用射频磁控溅射法沉积出一层厚度值为第四阈值的导电金属氧化物作为底部栅极，然后通过去光阻，使所述底部栅极图案化，再以原子力沉积技术 沉积出一层厚度值为第五阈值的非透明的绝缘材料作为栅极绝缘层，并通过紫外光刻与磷酸湿刻技术，使栅极绝缘层图案化；
待所选塑料制作而成的衬底上方的栅极绝缘层制备完成后，用磁控溅射法沉积出一层厚度值为第六阈值的导电金属氧化物作为源漏极，再通过涂布上光阻并通过紫外光刻技术使所述涂布上的光阻图案化后，用磷酸湿刻掉暴露的氧化铟锡，进一步将未暴露的导电金属氧化物去光阻制备出源漏极图案。
其中，所述步骤S22具体包括：
用丙酮、甲醇和异丙醇浸泡冲洗所选塑料制作而成的衬底的源漏极，并用一定浓度的氮气对所述冲洗后的源漏极吹干，且进一步对所述吹干后的源漏极在有紫外光的条件下进行60秒臭氧清洗，待在由石墨烯制备出的有源层成膜前，对所述臭氧清洗后的源漏极以氧气等离子体轰击60秒；
把生长在铜箔上的石墨烯通过聚甲基丙烯酸甲酯转印技术转移到所述氧气等离子体轰击后的源漏极上形成一层薄膜，再通过涂布光刻胶于所述石墨烯形成的薄膜上方，并用氧离子刻蚀所述石墨烯形成的薄膜中除晶体管沟道部分之外的其余部分后，继续去除所述石墨烯形成的薄膜中晶体管沟道部分上方的光刻胶，即得到由石墨烯制备出的有源层。
其中，所述步骤S23具体包括：
待所述由石墨烯制备出的有源层制备完成后，并在所述由石墨烯制备出的有源层上方，用化学气相沉积法覆盖上一定厚度值的二氧化硅作为钝化层。
其中，所选衬底为采用透明塑料制作而成的透明衬底，且其对应上方形成有透明底部栅极、透明栅极绝缘层、透明源漏极、透明有源层和透明钝化层；其中，
所述透明栅极绝缘层和所述透明钝化层均采用透明绝缘材料制作而成，所述透明绝缘材料包括二氧化硅、氧化石墨烯、氮化硅、三氧化二铝和有机 透明绝缘材料；
所述透明底部栅极和所述透明源漏极均采用功函数可调的透明导电金属氧化物为金属导电极，且所述透明导电金属氧化物包括氧化铟锡、氧化锌铝、氧化锡氟、氧化锌镓和氧化锌锡；
所述透明有源层采用石墨烯制作而成。
其中，所述方法进一步包括：
在所述透明钝化层上方，采用射频磁控溅射法沉积出一层厚度值为第七阈值的透明导电金属氧化物作为透明顶部栅极。
相应的，本发明实施例还提供了又一种薄膜晶体管的制备方法，其中，所述方法包括以下步骤：
步骤S31、选定一衬底，并在所选衬底的上方形成源漏极；其中，所述源漏极均采用功函数可调的导电金属氧化物为金属导电极；
步骤S32、冲洗及吹干所选衬底的源漏极，且待对所述吹干后的源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的源漏极上方形成有由碳材料制备出的有源层；
步骤S33、待所述有源层制备完成后，并在所述有源层上方，依序由下往上分别形成钝化层和顶部栅极。
其中，所述步骤S31具体包括：
当选定一由硅化物制作而成的衬底时，在所选硅化物制作而成的衬底上方采用磁控溅射法沉积出一层厚度值为第三阈值的导电金属氧化物作为源漏极，再通过涂布光刻胶、曝光、蚀刻、去光阻制备出源漏极图案。
其中，所述步骤S32具体包括：
用丙酮、甲醇和异丙醇浸泡冲洗所选硅化物制作而成的衬底的源漏极，并用一定浓度的氮气对所述冲洗后的源漏极吹干，且进一步对所述吹干后的源漏极在有紫外光的条件下进行60秒臭氧清洗，待在由半导体碳纳米管或 碳化硅制备出的有源层成膜前，对所述臭氧清洗后的源漏极以氧气等离子体轰击60秒；
将所述氧气等离子体轰击后的源漏极浸泡至半导体碳纳米管溶液或碳化硅溶液中，使得其上方沉积有一层薄膜后，取出在一定温度下烘烤，得到碳纳米管网络状薄膜或碳化硅网络状薄膜，再通过涂布光刻胶于所述碳纳米管网络状薄膜或碳化硅网络状薄膜上方，并用氧离子刻蚀所述碳纳米管网络状薄膜或碳化硅网络状薄膜中除晶体管沟道部分之外的其余部分后，继续去除所述碳纳米管网络状薄膜或碳化硅网络状薄膜中晶体管沟道部分上方的光刻胶，制备出碳纳米管沟道或碳化硅沟道薄膜，即得到由半导体碳纳米管或碳化硅制备出的有源层。
其中，所述步骤S33具体包括：
待所述由半导体碳纳米管或碳化硅制备出的有源层制备完成后，并在所述由半导体碳纳米管或碳化硅制备出的有源层上方，用化学气相沉积法覆盖上一定厚度值的二氧化硅作为钝化层，且进一步在所述钝化层上方，采用射频磁控溅射法沉积出一层厚度值为第七阈值的导电金属氧化物作为顶部栅极。
其中，所选衬底为采用石英、玻璃制作而成的透明衬底，且其对应上方形成有透明源漏极、透明有源层、透明钝化层和透明顶部栅极；其中，
所述透明钝化层采用透明绝缘材料制作而成，所述透明绝缘材料包括二氧化硅、氧化石墨烯、氮化硅、三氧化二铝和有机透明绝缘材料；
所述透明源漏极采用功函数可调的透明导电金属氧化物为金属导电极；
所述透明有源层采用半导体碳纳米管或碳化硅制作而成；
所述透明顶部栅极采用功函数可调或不可调的透明导电金属氧化物为金属导电极；
其中，所述透明导电金属氧化物包括氧化铟锡、氧化锌铝、氧化锡氟、氧化锌镓和氧化锌锡。
其中，所述步骤S31还具体包括：
当选定一由塑料制作而成的衬底时，在所选塑料制作而成的衬底上方采用磁控溅射法沉积出一层厚度值为第三阈值的导电金属氧化物作为源漏极，再通过涂布光刻胶、曝光、蚀刻、去光阻制备出源漏极图案。
其中，所述步骤S32还具体包括：
用丙酮、甲醇和异丙醇浸泡冲洗所选塑料制作而成的衬底的源漏极，并用一定浓度的氮气对所述冲洗后的源漏极吹干，且进一步对所述吹干后的源漏极在有紫外光的条件下进行60秒臭氧清洗，待在由石墨烯制备出的有源层成膜前，对所述臭氧清洗后的源漏极以氧气等离子体轰击60秒；
把生长在铜箔上的石墨烯通过聚甲基丙烯酸甲酯转印技术转移到所述氧气等离子体轰击后的源漏极上形成一层薄膜，再通过涂布光刻胶于所述石墨烯形成的薄膜上方，并用氧离子刻蚀所述石墨烯形成的薄膜中除晶体管沟道部分之外的其余部分后，继续去除所述石墨烯形成的薄膜中晶体管沟道部分上方的光刻胶，即得到由石墨烯制备出的有源层。
其中，所述步骤S33还具体包括：
待所述由石墨烯制备出的有源层制备完成后，并在所述由石墨烯制备出的有源层上方，用化学气相沉积法覆盖上一定厚度值的二氧化硅作为钝化层，且进一步在所述钝化层上方，采用射频磁控溅射法沉积出一层厚度值为第七阈值的导电金属氧化物作为顶部栅极。
其中，所选衬底为采用透明塑料制作而成的透明衬底，且其对应上方形成有透明源漏极、透明有源层、透明钝化层和透明顶部栅极；其中，
所述透明钝化层采用透明绝缘材料制作而成，所述透明绝缘材料包括二氧化硅、氧化石墨烯、氮化硅、三氧化二铝和有机透明绝缘材料；
所述透明源漏极采用功函数可调的透明导电金属氧化物为金属导电极；
所述透明有源层采用石墨烯制作而成；
所述透明顶部栅极采用功函数可调或不可调的透明导电金属氧化物为 金属导电极；
其中，所述透明导电金属氧化物包括氧化铟锡、氧化锌铝、氧化锡氟、氧化锌镓和氧化锌锡。
本发明通过在现有非晶硅薄膜晶体管成熟的制程与工艺上，增加对金属氧化物导电层(即源漏极)的臭氧清洗和氧等离子体处理两个步骤，改善导电金属氧化物的表面功函数，使其与碳材料有源层形成良好的欧姆接触，从而改善碳基薄膜晶体管器件性能，且本发明即可适用于非透明碳基材料薄膜晶体管的制备上，也可以适用于全透明碳基材料薄膜晶体管的制备上。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，根据这些附图获得其他的附图仍属于本发明的范畴。
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，根据这些附图获得其他的附图仍属于本发明的范畴。
图1为本发明实施例一提供的一种薄膜晶体管的制备方法的流程图；
图2为本发明实施例二提供的另一种薄膜晶体管的制备方法的流程图；
图3为本发明实施例三提供的又一种薄膜晶体管的制备方法的流程图；
图4为本发明实施例四提供的又一种薄膜晶体管的制备方法的流程图；
图5为本发明实施例五提供的又一种薄膜晶体管的制备方法的流程图；
图6为本发明实施例六提供的又一种薄膜晶体管的制备方法的流程图；
图7为本发明实施例八提供的一种薄膜晶体管的局部剖视图；
图8为本发明实施例十提供的另一种薄膜晶体管的局部剖视图；
图9为本发明实施例十二提供的又一种薄膜晶体管的局部剖视图。
具体实施方式
下面参考附图对本发明的优选实施例进行描述。
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述。
如图1所示，为本发明实施例一中，提供的一种薄膜晶体管的制备方法，该方法示出了非全透明底栅结构碳基材料薄膜晶体管的制备方法，具体包括以下步骤：
步骤S101、选定一衬底，并在所选衬底的上方，依序由下往上分别形成底部栅极、栅极绝缘层和源漏极；其中，所述源漏极采用功函数可调的导电金属氧化物为金属导电极；
步骤S102、冲洗及吹干所选衬底的源漏极，且待对所述吹干后的源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的源漏极上方形成有由碳材料制备出的有源层；
步骤S103、待所述有源层制备完成后，并在所述有源层上方形成钝化层。
具体过程为，在步骤S101中，所选衬底由非透明材料制作而成；栅极绝缘层由非透明的绝缘材料制作而成，并通过等离子增强化学气相沉积法、原子力沉积技术或其它技术的工艺制程；底部栅极采用导电金属氧化物或透明导电金属氧化物为金属导电极，并通过射频磁控溅射法工艺制程；而源漏极采用功函数可调的导电金属氧化物或透明导电金属氧化物为金属导电极， 并通过磁控溅射法工艺制程。
根据衬底材质不同，其上方制备出的底部栅极、栅极绝缘层和源漏极也有相应不同的制备方法，具体如下：
在一个实施例中，首先选定硅化物衬底，并在硅化物衬底上采用射频磁控溅射法沉积100nm的导电金属氧化物或透明导电金属氧化物作为底部栅极；其次，采用等离子增强化学气相沉积法(以硅烷与氧气为原料气体)沉积400nm的非透明的绝缘材料作为栅极绝缘层；然后，采用磁控溅射法沉积100nm的功函数可调的导电金属氧化物或透明导电金属氧化物作为源漏极。
在另一个实施例中，首先选定塑料衬底，将所选塑料衬底放置于丙酮和异丙醇中超声清洗后以氮气吹干；在所选塑料衬底上方通过紫外光刻技术形成图案化光阻，并采用射频磁控溅射法沉积出200nm的导电金属氧化物或透明导电金属氧化物作为底部栅极，然后通过去光阻，使底部栅极图案化，再以原子力沉积技术沉积出50nm的非透明的绝缘材料作为栅极绝缘层，并通过紫外光刻与磷酸湿刻技术，使栅极绝缘层图案化；然后，采用磁控溅射法沉积100nm的功函数可调的导电金属氧化物或透明导电金属氧化物作为源漏极。
在步骤S102中，用丙酮、甲醇和异丙醇浸泡冲洗所选衬底的源漏极，并用一定浓度(如浓度比值大于70％的高浓度)的氮气对冲洗后的源漏极吹干，且进一步对吹干后的源漏极在有紫外光的条件下进行60秒臭氧清洗，待在有源层成膜前，对臭氧清洗后的源漏极以氧气等离子体轰击60秒。应当说明的是，臭氧清洗和氧气等离子体处理包括氧气等离子体浴和注入，氧等离子体处理能清洁源漏极的导电金属氧化物表面有机杂质的同时，使源漏极的导电金属氧化物表面终端氧成份增加，表面极化增强，从而调控导电金属氧化物表面功函数。
其中，该有源层采用碳材料制作而成，该碳材料包括半导体碳纳米管、石墨烯和碳化硅，具体制备有源层的方法如下：
(1)当采用半导体碳纳米管或碳化硅制备有源层时，将氧气等离子体轰击后的源漏极浸泡至半导体碳纳米管溶液或碳化硅溶液中，使得其上方沉积有一层薄膜后，取出在一定温度(如150℃)下烘烤(可持续30分钟)，得到碳纳米管网络状薄膜或碳化硅网络状薄膜，再通过涂布光刻胶于所述碳纳米管网络状薄膜或碳化硅网络状薄膜上方，并用氧离子刻蚀碳纳米管网络状薄膜或碳化硅网络状薄膜中除晶体管沟道部分之外的其余部分后，继续去除碳纳米管网络状薄膜或碳化硅网络状薄膜中晶体管沟道部分上方的光刻胶，制备出碳纳米管沟道或碳化硅沟道薄膜，即得到由半导体碳纳米管或碳化硅制备出的有源层(该有源层可根据工艺调整为透明或非透明均可)；
(2)当采用石墨烯制备有源层时，把生长在铜箔上的石墨烯通过聚甲基丙烯酸甲酯转印技术转移到氧气等离子体轰击后的源漏极上形成一层薄膜，再通过涂布光刻胶于石墨烯形成的薄膜上方，并用氧离子刻蚀石墨烯形成的薄膜中除晶体管沟道部分之外的其余部分后，继续去除石墨烯形成的薄膜中晶体管沟道部分上方的光刻胶，即得到由石墨烯制备出的有源层(该有源层可根据工艺调整为透明或非透明均可)。
在步骤S103中，在上述由半导体碳纳米管、碳化硅、石墨烯之中其一制备出的有源层上方，用化学气相沉积法覆盖上一定厚度值(如500nm)的二氧化硅作为钝化层。
如图2所示，为本发明实施例二中，提供的另一种薄膜晶体管的制备方法，该方法示出了全透明底栅结构碳基材料薄膜晶体管的制备方法，具体包括以下步骤：
步骤S201、选定一由透明材料制作而成的衬底，并在所选衬底的上方，依序由下往上分别形成透明底部栅极、透明栅极绝缘层和透明源漏极；其中，所述透明源漏极采用功函数可调的透明导电金属氧化物为金属导电极；
步骤S202、冲洗及吹干所选衬底的透明源漏极，且待对所述吹干后的透明源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后 的透明源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的透明源漏极上方形成有由碳材料制备出的透明有源层；
步骤S203、待所述透明有源层制备完成后，并在所述透明有源层上方形成透明钝化层。
具体过程为，在步骤S201中，衬底的透明材料包括石英、玻璃和透明塑料；底部栅极也采用与透明源漏极相同功函数可调的透明导电金属氧化物为金属导电极，且透明导电金属氧化物包括氧化铟锡、氧化锌铝、氧化锡氟、氧化锌镓和氧化锌锡；透明栅极绝缘层采用透明绝缘材料制作而成，且透明绝缘材料包括二氧化硅、氧化石墨烯、氮化硅、三氧化二铝和有机透明绝缘材料。
采用不同材质的衬底，其上依序由下往上形成的透明底部栅极、透明栅极绝缘层和透明源漏极相对应的具体制备方法也不同，具体如下：
在一个实施例中，当选定一由石英或玻璃制作而成的衬底时，在所选石英或玻璃制作而成的衬底上方采用射频磁控溅射法沉积出一层厚度值为第一阈值(如100nm)的氧化铟锡作为透明底部栅极，然后采用等离子增强化学气相沉积法(以硅烷与氧气为原料气体)沉积出一层厚度值为第二阈值(如400nm)的二氧化硅作为透明栅极绝缘层；
待所选石英或玻璃制作而成的衬底上方的透明栅极绝缘层制备完成后，用磁控溅射法沉积出一层厚度值为第三阈值(如500nm)的氧化铟锡作为透明源漏极，再通过涂布光刻胶、曝光、蚀刻、去光阻制备出透明源漏极图案。
在另一个实施例中，当选定一由透明塑料制作而成的衬底时，将所选透明塑料制作而成的衬底放置于丙酮和异丙醇中超声清洗后以氮气吹干；
在所选透明塑料制作而成的衬底上方通过紫外光刻技术形成图案化光阻，并采用射频磁控溅射法沉积出一层厚度值为第四阈值(如200nm)的氧化铟锡作为透明底部栅极，然后通过去光阻，使透明底部栅极图案化，再以原子力沉积技术沉积出一层厚度值为第五阈值(如50nm)的三氧化二铝作 为透明栅极绝缘层，并通过紫外光刻与磷酸湿刻技术，使透明栅极绝缘层图案化；
待所选透明塑料制作而成的衬底上方的透明栅极绝缘层制备完成后，用磁控溅射法沉积出一层厚度值为第六阈值(如500nm)的氧化铟锡作为透明源漏极，再通过涂布上光阻并通过紫外光刻技术使所述涂布上的光阻图案化后，用磷酸湿刻掉暴露的氧化铟锡，进一步将未暴露的氧化铟锡去光阻制备出透明源漏极图案。
在步骤S202中，用丙酮、甲醇和异丙醇浸泡冲洗所选衬底的透明源漏极，并用一定浓度(如浓度比值大于70％的高浓度)的氮气对冲洗后的透明源漏极吹干，且进一步对吹干后的源漏极在有紫外光的条件下进行60秒臭氧清洗，待在透明有源层成膜前，对臭氧清洗后的透明源漏极以氧气等离子体轰击60秒。应当说明的是，臭氧清洗和氧气等离子体处理包括氧气等离子体浴和注入，氧等离子体处理能清洁透明源漏极的透明导电金属氧化物表面有机杂质的同时，使透明源漏极的透明导电金属氧化物表面终端氧成份增加，表面极化增强，从而调控透明导电金属氧化物表面功函数。
其中，该透明有源层采用碳材料制作而成，该碳材料包括半导体碳纳米管、石墨烯和碳化硅，具体制备有源层的方法如下：
(1)当采用半导体碳纳米管或碳化硅制备透明有源层时，将氧气等离子体轰击后的透明源漏极浸泡至半导体碳纳米管溶液或碳化硅溶液中，使得其上方沉积有一层薄膜后，取出在一定温度(如150℃)下烘烤(可持续30分钟)，得到碳纳米管网络状薄膜或碳化硅网络状薄膜，再通过涂布光刻胶于所述碳纳米管网络状薄膜或碳化硅网络状薄膜上方，并用氧离子刻蚀碳纳米管网络状薄膜或碳化硅网络状薄膜中除晶体管沟道部分之外的其余部分后，继续去除碳纳米管网络状薄膜或碳化硅网络状薄膜中晶体管沟道部分上方的光刻胶，制备出碳纳米管沟道或碳化硅沟道薄膜，即得到由半导体碳纳米管或碳化硅制备出的透明有源层；
(2)当采用石墨烯制备透明有源层时，把生长在铜箔上的石墨烯通过聚甲基丙烯酸甲酯转印技术转移到氧气等离子体轰击后的透明源漏极上形成一层薄膜，再通过涂布光刻胶于石墨烯形成的薄膜上方，并用氧离子刻蚀石墨烯形成的薄膜中除晶体管沟道部分之外的其余部分后，继续去除石墨烯形成的薄膜中晶体管沟道部分上方的光刻胶，即得到由石墨烯制备出的透明有源层。
在步骤S203中，在上述由半导体碳纳米管、碳化硅、石墨烯之中其一制备出的透明有源层上方，用化学气相沉积法覆盖上一定厚度值(如500nm)的二氧化硅作为透明钝化层；其中，透明钝化层也采用与透明绝缘栅极层相同的透明绝缘材料制作而成。
如图3所示，为本发明实施例三中，提供的又一种薄膜晶体管的制备方法，该方法示出了非全透明双栅结构碳基材料薄膜晶体管的制备方法，具体包括以下步骤：
步骤S301、选定一衬底，并在所选衬底的上方，依序由下往上分别形成底部栅极、栅极绝缘层和源漏极；其中，所述源漏极采用功函数可调的导电金属氧化物为金属导电极；
步骤S302、冲洗及吹干所选衬底的源漏极，且待对所述吹干后的源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的源漏极上方形成有由碳材料制备出的有源层；
步骤S303、待所述有源层制备完成后，并在所述有源层上方，依序由下往上分别形成钝化层和顶部栅极。
相应于本发明实施例一中的薄膜晶体管的制备方法，本发明实施例二中的薄膜晶体管的制备方法增加了顶部栅极的制备工艺，该顶部栅极的制备工艺与底部栅极制备工艺相同，如采用射频磁控溅射法沉积一层厚度值为100nm的氧化铟锡作为顶部栅极，而本发明实施例二中的薄膜晶体管的制备 方法中衬底、底部栅极、栅极绝缘层、源漏极、有源层和钝化层的制备工艺与本发明实施例一中的薄膜晶体管的制备方法中衬底、底部栅极、栅极绝缘层、源漏极、有源层和钝化层对应相同，因此具体衬底、底部栅极、栅极绝缘层、源漏极、有源层和钝化层的制备工艺请参见本发明实施例一中的相关内容，在此不再一一赘述。
如图4所示，为本发明实施例四中，提供的又一种薄膜晶体管的制备方法，该方法示出了全透明双栅结构碳基材料薄膜晶体管的制备方法，具体包括以下步骤：
步骤S401、选定一由透明材料制作而成的衬底，并在所选衬底的上方，依序由下往上分别形成透明底部栅极、透明栅极绝缘层和透明源漏极；所述透明源漏极采用功函数可调的透明导电金属氧化物为金属导电极；
步骤S402、冲洗及吹干所选衬底的透明源漏极，且待对所述吹干后的透明源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的透明源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的透明源漏极上方形成有由碳材料制备出的透明有源层；
步骤S403、待所述透明有源层制备完成后，并在所述透明有源层上方，依序由下往上分别形成透明钝化层和透明顶部栅极。
其中，所述透明顶部栅极采用透明导电金属氧化物为金属导电极。
相应于本发明实施例二中的薄膜晶体管的制备方法，本发明实施例四中的薄膜晶体管的制备方法增加了透明顶部栅极的制备工艺，该透明顶部栅极的制备工艺与透明底部栅极制备工艺相同，如采用射频磁控溅射法沉积一层厚度值为第七阈值(如100nm)的氧化铟锡作为透明顶部栅极，而本发明实施例四中的薄膜晶体管的制备方法中衬底、透明底部栅极、透明栅极绝缘层、透明源漏极、透明有源层和透明钝化层的制备工艺与本发明实施例二中的薄膜晶体管的制备方法中衬底、透明底部栅极、透明栅极绝缘层、透明源漏极、透明有源层和透明钝化层对应相同，因此具体衬底、透明底部栅极、透明栅 极绝缘层、透明源漏极、透明有源层和透明钝化层的制备工艺请参见本发明实施例二中的相关内容，在此不再一一赘述。
如图5所示，为本发明实施例五中，提供的又一种薄膜晶体管的制备方法，该方法示出了非全透明顶栅结构碳基材料薄膜晶体管的制备方法，具体包括以下步骤：
步骤S501、选定一衬底，并在所选衬底的上方形成源漏极；其中，所述源漏极均采用功函数可调的导电金属氧化物为金属导电极；
步骤S502、冲洗及吹干所选衬底的源漏极，且待对所述吹干后的源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的源漏极上方形成有由碳材料制备出的有源层；
步骤S503、待所述有源层制备完成后，并在所述有源层上方，依序由下往上分别形成钝化层和顶部栅极。
相应于本发明实施例三中的薄膜晶体管的制备方法，本发明实施例五中的薄膜晶体管的制备方法省略了底部栅极和绝缘栅极层的制备工艺，而本发明实施例五中的薄膜晶体管的制备方法中有源层、钝化层和顶部栅极的制备工艺与本发明实施例三中的薄膜晶体管的制备方法中有源层、钝化层和顶部栅极对应相同，因此具体有源层、钝化层和顶部栅极的制备工艺请参见本发明实施例三中的相关内容，在此不再一一赘述。
然而，对于步骤S501中，直接将源漏极制备于衬底上方，因衬底材质不同，其上方制备出的源漏极也有相应不同的制备方法，具体如下：
在一个实施例中，选定硅化物(如石英、玻璃)衬底，并在硅化物衬底上采用射频磁控溅射法沉积一定厚度值(如100nm)的功函数可调的导电金属氧化物或透明导电金属氧化物作为漏源极即可。
在另一个实施例中，选定塑料衬底，将所选塑料衬底放置于丙酮和异丙醇中超声清洗后以氮气吹干；在所选塑料衬底上方通过紫外光刻技术形成图 案化光阻，并采用射频磁控溅射法沉积出一定厚度值(如500nm)的功函数可调的导电金属氧化物或透明导电金属氧化物作为源漏极，再通过涂布上光阻并通过紫外光刻技术使所述涂布上的光阻图案化后，用磷酸湿刻掉暴露的氧化铟锡，进一步将未暴露的导电金属氧化物或透明导电金属氧化物去光阻制备出源漏极图案。
如图6所示，为本发明实施例六中，提供的又一种薄膜晶体管的制备方法，该方法示出了全透明顶栅结构碳基材料薄膜晶体管的制备方法，具体包括以下步骤：
步骤S601、选定一衬底，并在所选衬底的上方形成透明源漏极；其中，所述透明源漏极采用功函数可调的透明导电金属氧化物为金属导电极；
步骤S602、冲洗及吹干所选衬底的透明源漏极，且待对所述吹干后的透明源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的透明源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的透明源漏极上方形成有由碳材料制备出的透明有源层；
步骤S603、待所述透明有源层制备完成后，并在所述透明有源层上方，依序由下往上分别形成透明钝化层和透明顶部栅极。
相应于本发明实施例四中的薄膜晶体管的制备方法，本发明实施例六中的薄膜晶体管的制备方法省略了透明底部栅极和透明绝缘栅极层的制备工艺，而本发明实施例六中的薄膜晶体管的制备方法中衬底、透明源漏极、透明有源层、透明钝化层和透明顶部栅极的制备工艺与本发明实施例四中的薄膜晶体管的制备方法中衬底、透明源漏极、透明有源层、透明钝化层和透明顶部栅极对应相同，因此具体衬底、透明源漏极、透明有源层、透明钝化层和透明顶部栅极的制备工艺请参见本发明实施例四中的相关内容，在此不再一一赘述。
然而，对于步骤S601中，直接将透明源漏极制备于衬底上方，因衬底材质不同，其上方制备出的透明源漏极也有相应不同的制备方法，具体如下：
在一个实施例中，当选定一由石英或玻璃制作而成的衬底时，在所选石英或玻璃制作而成的衬底上方采用射频磁控溅射法沉积出一层厚度值为第八阈值(如500nm)的氧化铟锡作为透明源漏极，再通过涂布光刻胶、曝光、蚀刻、去光阻制备出所述透明源漏极图案。
在另一个实施例中，当选定一由透明塑料制作而成的衬底时，将所选透明塑料制作而成的衬底放置于丙酮和异丙醇中超声清洗后以氮气吹干；在所选透明塑料制作而成的衬底上方通过紫外光刻技术形成图案化光阻，并采用射频磁控溅射法沉积出一层厚度值为第九阈值(如500nm)的氧化铟锡作为透明源漏极，再通过涂布上光阻并通过紫外光刻技术使所述涂布上的光阻图案化后，用磷酸湿刻掉暴露的氧化铟锡，进一步将未暴露的氧化铟锡去光阻制备出所述透明源漏极图案。
可以理解的是，采用射频磁控溅射法沉积出一层厚度值为第十阈值(如500nm)的氧化铟锡作为透明顶部栅极。
相应于本发明实施例一中的薄膜晶体管的制备方法，本发明实施例七提供了一种薄膜晶体管，采用本发明实施例一中的薄膜晶体管的制备方法制备而成，该薄膜晶体管为非全透明底栅结构碳基材料薄膜晶体管。
如图7所示，相应于本发明实施例二中的薄膜晶体管的制备方法，本发明实施例八提供了另一种薄膜晶体管，采用本发明实施例二中的薄膜晶体管的制备方法制备而成，该薄膜晶体管为全透明底栅结构碳基材料薄膜晶体管。图7中，11-衬底，12-透明底部栅极，13-透明栅极绝缘层，14-透明源漏极，15-透明有源层，16-透明钝化层。
相应于本发明实施例三中的薄膜晶体管的制备方法，本发明实施例九提供了又一种薄膜晶体管，采用本发明实施例三中的薄膜晶体管的制备方法制备而成，该薄膜晶体管为非全透明双栅结构碳基材料薄膜晶体管。
如图8所示，相应于本发明实施例四中的薄膜晶体管的制备方法，本发明实施例十提供了又一种薄膜晶体管，采用本发明实施例四中的薄膜晶体管 的制备方法制备而成，该薄膜晶体管为全透明双栅结构碳基材料薄膜晶体管。图8中，21-衬底，22-透明底部栅极，23-透明栅极绝缘层，24-透明源漏极，25-透明有源层，26-透明钝化层，27-透明顶部栅极。
相应于本发明实施例五中的薄膜晶体管的制备方法，本发明实施例十一提供了又一种薄膜晶体管，采用本发明实施例五中的薄膜晶体管的制备方法制备而成，该薄膜晶体管为非全透明顶栅结构碳基材料薄膜晶体管。
如图9所示，相应于本发明实施例六中的薄膜晶体管的制备方法，本发明实施例十二提供了又一种薄膜晶体管，采用本发明实施例六中的薄膜晶体管的制备方法制备而成，该薄膜晶体管为全透明顶栅结构碳基材料薄膜晶体管。图9中，31-衬底，34-透明源漏极，35-透明有源层，36-透明钝化层，37-透明顶部栅极。
综上，本发明通过在现有非晶硅薄膜晶体管成熟的制程与工艺上，增加对金属氧化物导电层(即源漏极)的臭氧清洗和氧等离子体处理两个步骤，改善导电金属氧化物的表面功函数，使其与碳材料有源层形成良好的欧姆接触，从而改善碳基薄膜晶体管器件性能，且本发明即可适用于非透明碳基材料薄膜晶体管的制备上，也可以适用于全透明碳基材料薄膜晶体管的制备上。
以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，因此依本发明权利要求所作的等同变化，仍属本发明所涵盖的范围。

Claims (20)

  1. 一种薄膜晶体管的制备方法，其中，所述方法包括以下步骤：
    步骤S11、选定一衬底，并在所选衬底的上方，依序由下往上分别形成底部栅极、栅极绝缘层和源漏极；其中，所述源漏极采用功函数可调的导电金属氧化物为金属导电极；
    步骤S12、冲洗及吹干所选衬底的源漏极，且待对所述吹干后的源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的源漏极上方形成有由碳材料制备出的有源层；
    步骤S13、待所述有源层制备完成后，并在所述有源层上方形成钝化层。
  2. 如权利要求1所述的方法，其中，所述步骤S11具体包括：
    当选定一由硅化物制作而成的衬底时，在所选硅化物制作而成的衬底上方采用射频磁控溅射法沉积出一层厚度值为第一阈值的导电金属氧化物作为底部栅极，然后采用等离子增强化学气相沉积法沉积出一层厚度值为第二阈值的二氧化硅作为栅极绝缘层；
    待所选硅化物制作而成的衬底上方的栅极绝缘层制备完成后，用磁控溅射法沉积出一层厚度值为第三阈值的导电金属氧化物作为源漏极，再通过涂布光刻胶、曝光、蚀刻、去光阻制备出源漏极图案。
  3. 如权利要求2所述的方法，其中，所述步骤S12具体包括：
    用丙酮、甲醇和异丙醇浸泡冲洗所选硅化物制作而成的衬底的源漏极，并用一定浓度的氮气对所述冲洗后的源漏极吹干，且进一步对所述吹干后的源漏极在有紫外光的条件下进行60秒臭氧清洗，待在由半导体碳纳米管或碳化硅制备出的有源层成膜前，对所述臭氧清洗后的源漏极以氧气等离子体轰击60秒；
    将所述氧气等离子体轰击后的源漏极浸泡至半导体碳纳米管溶液或碳 化硅溶液中，使得其上方沉积有一层薄膜后，取出在一定温度下烘烤，得到碳纳米管网络状薄膜或碳化硅网络状薄膜，再通过涂布光刻胶于所述碳纳米管网络状薄膜或碳化硅网络状薄膜上方，并用氧离子刻蚀所述碳纳米管网络状薄膜或碳化硅网络状薄膜中除晶体管沟道部分之外的其余部分后，继续去除所述碳纳米管网络状薄膜或碳化硅网络状薄膜中晶体管沟道部分上方的光刻胶，制备出碳纳米管沟道或碳化硅沟道薄膜，即得到由半导体碳纳米管或碳化硅制备出的有源层。
  4. 如权利要求3所述的方法，其中，所述步骤S13具体包括：
    待所述由半导体碳纳米管或碳化硅制备出的有源层制备完成后，并在所述由半导体碳纳米管或碳化硅制备出的有源层上方，用化学气相沉积法覆盖上一定厚度值的二氧化硅作为钝化层。
  5. 如权利要求4所述的方法，其中，所选衬底为采用石英、玻璃制作而成的透明衬底，且其对应上方形成有透明底部栅极、透明栅极绝缘层、透明源漏极、透明有源层和透明钝化层；其中，
    所述透明栅极绝缘层和所述透明钝化层均采用透明绝缘材料制作而成，所述透明绝缘材料包括二氧化硅、氧化石墨烯、氮化硅、三氧化二铝和有机透明绝缘材料；
    所述透明底部栅极和所述透明源漏极均采用功函数可调的透明导电金属氧化物为金属导电极，且所述透明导电金属氧化物包括氧化铟锡、氧化锌铝、氧化锡氟、氧化锌镓和氧化锌锡；
    所述透明有源层采用半导体碳纳米管或碳化硅制作而成。
  6. 如权利要求5所述的方法，其中，所述方法进一步包括：
    在所述透明钝化层上方，采用射频磁控溅射法沉积出一层厚度值为第七阈值的透明导电金属氧化物作为透明顶部栅极。
  7. 一种薄膜晶体管的制备方法，其中，所述方法包括以下步骤：
    步骤S21、选定一衬底，并在所选衬底的上方，依序由下往上分别形成 底部栅极、栅极绝缘层和源漏极；其中，所述源漏极采用功函数可调的导电金属氧化物为金属导电极；
    步骤S22、冲洗及吹干所选衬底的源漏极，且待对所述吹干后的源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的源漏极以氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的源漏极上方形成有由碳材料制备出的有源层；
    步骤S23、待所述有源层制备完成后，并在所述有源层上方形成钝化层；
    其中，所述步骤S21具体包括：
    当选定一由塑料制作而成的衬底时，将所选塑料制作而成的衬底放置于丙酮和异丙醇中超声清洗后以氮气吹干；
    在所选塑料制作而成的衬底上方通过紫外光刻技术形成图案化光阻，并采用射频磁控溅射法沉积出一层厚度值为第四阈值的导电金属氧化物作为底部栅极，然后通过去光阻，使所述底部栅极图案化，再以原子力沉积技术沉积出一层厚度值为第五阈值的非透明的绝缘材料作为栅极绝缘层，并通过紫外光刻与磷酸湿刻技术，使栅极绝缘层图案化；
    待所选塑料制作而成的衬底上方的栅极绝缘层制备完成后，用磁控溅射法沉积出一层厚度值为第六阈值的导电金属氧化物作为源漏极，再通过涂布上光阻并通过紫外光刻技术使所述涂布上的光阻图案化后，用磷酸湿刻掉暴露的氧化铟锡，进一步将未暴露的导电金属氧化物去光阻制备出源漏极图案。
  8. 如权利要求7所述的方法，其中，所述步骤S22具体包括：
    用丙酮、甲醇和异丙醇浸泡冲洗所选塑料制作而成的衬底的源漏极，并用一定浓度的氮气对所述冲洗后的源漏极吹干，且进一步对所述吹干后的源漏极在有紫外光的条件下进行60秒臭氧清洗，待在由石墨烯制备出的有源层成膜前，对所述臭氧清洗后的源漏极以氧气等离子体轰击60秒；
    把生长在铜箔上的石墨烯通过聚甲基丙烯酸甲酯转印技术转移到所述 氧气等离子体轰击后的源漏极上形成一层薄膜，再通过涂布光刻胶于所述石墨烯形成的薄膜上方，并用氧离子刻蚀所述石墨烯形成的薄膜中除晶体管沟道部分之外的其余部分后，继续去除所述石墨烯形成的薄膜中晶体管沟道部分上方的光刻胶，即得到由石墨烯制备出的有源层。
  9. 如权利要求8所述的方法，其中，所述步骤S23具体包括：
    待所述由石墨烯制备出的有源层制备完成后，并在所述由石墨烯制备出的有源层上方，用化学气相沉积法覆盖上一定厚度值的二氧化硅作为钝化层。
  10. 如权利要求9所述的方法，其中，所选衬底为采用透明塑料制作而成的透明衬底，且其对应上方形成有透明底部栅极、透明栅极绝缘层、透明源漏极、透明有源层和透明钝化层；其中，
    所述透明栅极绝缘层和所述透明钝化层均采用透明绝缘材料制作而成，所述透明绝缘材料包括二氧化硅、氧化石墨烯、氮化硅、三氧化二铝和有机透明绝缘材料；
    所述透明底部栅极和所述透明源漏极均采用功函数可调的透明导电金属氧化物为金属导电极，且所述透明导电金属氧化物包括氧化铟锡、氧化锌铝、氧化锡氟、氧化锌镓和氧化锌锡；
    所述透明有源层采用石墨烯制作而成。
  11. 如权利要求10所述的方法，其中，所述方法进一步包括：
    在所述透明钝化层上方，采用射频磁控溅射法沉积出一层厚度值为第七阈值的透明导电金属氧化物作为透明顶部栅极。
  12. 一种薄膜晶体管的制备方法，其中，所述方法包括以下步骤：
    步骤S31、选定一衬底，并在所选衬底的上方形成源漏极；其中，所述源漏极均采用功函数可调的导电金属氧化物为金属导电极；
    步骤S32、冲洗及吹干所选衬底的源漏极，且待对所述吹干后的源漏极在预定光照条件下进行一定时间臭氧清洗后，对所述臭氧清洗后的源漏极以 氧气等离子体轰击一段时间，并进一步在所述氧气等离子体轰击后的源漏极上方形成有由碳材料制备出的有源层；
    步骤S33、待所述有源层制备完成后，并在所述有源层上方，依序由下往上分别形成钝化层和顶部栅极。
  13. 如权利要求12所述的方法，其中，所述步骤S31具体包括：
    当选定一由硅化物制作而成的衬底时，在所选硅化物制作而成的衬底上方采用磁控溅射法沉积出一层厚度值为第三阈值的导电金属氧化物作为源漏极，再通过涂布光刻胶、曝光、蚀刻、去光阻制备出源漏极图案。
  14. 如权利要求13所述的方法，其中，所述步骤S32具体包括：
    用丙酮、甲醇和异丙醇浸泡冲洗所选硅化物制作而成的衬底的源漏极，并用一定浓度的氮气对所述冲洗后的源漏极吹干，且进一步对所述吹干后的源漏极在有紫外光的条件下进行60秒臭氧清洗，待在由半导体碳纳米管或碳化硅制备出的有源层成膜前，对所述臭氧清洗后的源漏极以氧气等离子体轰击60秒；
    将所述氧气等离子体轰击后的源漏极浸泡至半导体碳纳米管溶液或碳化硅溶液中，使得其上方沉积有一层薄膜后，取出在一定温度下烘烤，得到碳纳米管网络状薄膜或碳化硅网络状薄膜，再通过涂布光刻胶于所述碳纳米管网络状薄膜或碳化硅网络状薄膜上方，并用氧离子刻蚀所述碳纳米管网络状薄膜或碳化硅网络状薄膜中除晶体管沟道部分之外的其余部分后，继续去除所述碳纳米管网络状薄膜或碳化硅网络状薄膜中晶体管沟道部分上方的光刻胶，制备出碳纳米管沟道或碳化硅沟道薄膜，即得到由半导体碳纳米管或碳化硅制备出的有源层。
  15. 如权利要求14所述的方法，其中，所述步骤S33具体包括：
    待所述由半导体碳纳米管或碳化硅制备出的有源层制备完成后，并在所述由半导体碳纳米管或碳化硅制备出的有源层上方，用化学气相沉积法覆盖上一定厚度值的二氧化硅作为钝化层，且进一步在所述钝化层上方，采用射 频磁控溅射法沉积出一层厚度值为第七阈值的导电金属氧化物作为顶部栅极。
  16. 如权利要求15所述的方法，其中，所选衬底为采用石英、玻璃制作而成的透明衬底，且其对应上方形成有透明源漏极、透明有源层、透明钝化层和透明顶部栅极；其中，
    所述透明钝化层采用透明绝缘材料制作而成，所述透明绝缘材料包括二氧化硅、氧化石墨烯、氮化硅、三氧化二铝和有机透明绝缘材料；
    所述透明源漏极采用功函数可调的透明导电金属氧化物为金属导电极；
    所述透明有源层采用半导体碳纳米管或碳化硅制作而成；
    所述透明顶部栅极采用功函数可调或不可调的透明导电金属氧化物为金属导电极；
    其中，所述透明导电金属氧化物包括氧化铟锡、氧化锌铝、氧化锡氟、氧化锌镓和氧化锌锡。
  17. 如权利要求12所述的方法，其中，所述步骤S31还具体包括：
    当选定一由塑料制作而成的衬底时，在所选塑料制作而成的衬底上方采用磁控溅射法沉积出一层厚度值为第三阈值的导电金属氧化物作为源漏极，再通过涂布光刻胶、曝光、蚀刻、去光阻制备出源漏极图案。
  18. 如权利要求17所述的方法，其中，所述步骤S32还具体包括：
    用丙酮、甲醇和异丙醇浸泡冲洗所选塑料制作而成的衬底的源漏极，并用一定浓度的氮气对所述冲洗后的源漏极吹干，且进一步对所述吹干后的源漏极在有紫外光的条件下进行60秒臭氧清洗，待在由石墨烯制备出的有源层成膜前，对所述臭氧清洗后的源漏极以氧气等离子体轰击60秒；
    把生长在铜箔上的石墨烯通过聚甲基丙烯酸甲酯转印技术转移到所述氧气等离子体轰击后的源漏极上形成一层薄膜，再通过涂布光刻胶于所述石墨烯形成的薄膜上方，并用氧离子刻蚀所述石墨烯形成的薄膜中除晶体管沟道部分之外的其余部分后，继续去除所述石墨烯形成的薄膜中晶体管沟道部 分上方的光刻胶，即得到由石墨烯制备出的有源层。
  19. 如权利要求18所述的方法，其中，所述步骤S33还具体包括：
    待所述由石墨烯制备出的有源层制备完成后，并在所述由石墨烯制备出的有源层上方，用化学气相沉积法覆盖上一定厚度值的二氧化硅作为钝化层，且进一步在所述钝化层上方，采用射频磁控溅射法沉积出一层厚度值为第七阈值的导电金属氧化物作为顶部栅极。
  20. 如权利要求19所述的方法，其中，所选衬底为采用透明塑料制作而成的透明衬底，且其对应上方形成有透明源漏极、透明有源层、透明钝化层和透明顶部栅极；其中，
    所述透明钝化层采用透明绝缘材料制作而成，所述透明绝缘材料包括二氧化硅、氧化石墨烯、氮化硅、三氧化二铝和有机透明绝缘材料；
    所述透明源漏极采用功函数可调的透明导电金属氧化物为金属导电极；
    所述透明有源层采用石墨烯制作而成；
    所述透明顶部栅极采用功函数可调或不可调的透明导电金属氧化物为金属导电极；
    其中，所述透明导电金属氧化物包括氧化铟锡、氧化锌铝、氧化锡氟、氧化锌镓和氧化锌锡。
PCT/CN2017/113533 2017-11-22 2017-11-29 一种薄膜晶体管及其制备方法 Ceased WO2019100425A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/741,116 US10777662B2 (en) 2017-11-22 2017-11-29 Thin film transistor and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711175832.7A CN107946189B (zh) 2017-11-22 2017-11-22 一种薄膜晶体管及其制备方法
CN201711175832.7 2017-11-22

Publications (1)

Publication Number Publication Date
WO2019100425A1 true WO2019100425A1 (zh) 2019-05-31

Family

ID=61929847

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/113533 Ceased WO2019100425A1 (zh) 2017-11-22 2017-11-29 一种薄膜晶体管及其制备方法

Country Status (2)

Country Link
CN (1) CN107946189B (zh)
WO (1) WO2019100425A1 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112490362A (zh) * 2020-11-11 2021-03-12 西安理工大学 一种基于图案化衬底的有机场效应晶体管制备方法
CN113809232A (zh) * 2021-08-25 2021-12-17 西安电子科技大学 物理瞬态阈值开关器件及其制备方法和装置
CN114078974A (zh) * 2020-08-21 2022-02-22 天津大学 一种利用高温生长SiO2栅介质层的硅纳米柔性薄膜晶体管制备方法
CN114242783A (zh) * 2021-11-02 2022-03-25 北京大学深圳研究生院 双栅结构的半导体场效应晶体管及其制造方法
WO2024049675A1 (en) * 2022-08-29 2024-03-07 Tae Technologies, Inc. System and methods for flow and shear flow control of frc plasma

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109991777B (zh) * 2019-04-09 2020-11-24 深圳市华星光电半导体显示技术有限公司 背光模组及其制备方法和显示装置
CN110137355B (zh) * 2019-05-15 2021-05-25 华东师范大学 一种改进亚阈值摆幅和开关比的有机薄膜晶体管及制备方法
CN112420848B (zh) * 2020-11-03 2022-04-08 深圳市华星光电半导体显示技术有限公司 氧化物薄膜晶体管及其制作方法、阵列基板
CN114281208B (zh) * 2021-12-21 2025-09-19 昆山工研院新型平板显示技术中心有限公司 触控基板及显示基板、显示装置
CN114678441B (zh) * 2022-05-30 2022-09-13 陕西半导体先导技术中心有限公司 基于预氧化处理技术的4H-SiC场效应光电晶体管及制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796121A (en) * 1997-03-25 1998-08-18 International Business Machines Corporation Thin film transistors fabricated on plastic substrates
CN1979912A (zh) * 2005-12-09 2007-06-13 三星Sdi株式会社 有机薄膜晶体管和具有该有机薄膜晶体管的平板显示设备
CN103325840A (zh) * 2013-04-15 2013-09-25 北京大学深圳研究生院 薄膜晶体管及其制作方法
CN103545221A (zh) * 2013-11-14 2014-01-29 广州新视界光电科技有限公司 金属氧化物薄膜晶体管及其制备方法
US20150357480A1 (en) * 2008-09-08 2015-12-10 Gang Yu Stable metal-oxide thin film transistor and method of making
CN105655389A (zh) * 2016-01-15 2016-06-08 京东方科技集团股份有限公司 有源层、薄膜晶体管、阵列基板、显示装置及制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008171861A (ja) * 2007-01-09 2008-07-24 Konica Minolta Holdings Inc 有機薄膜トランジスタ
CN104926289A (zh) * 2008-12-12 2015-09-23 出光兴产株式会社 复合氧化物烧结体及由其构成的溅射靶
CN102881654B (zh) * 2012-09-29 2016-03-23 京东方科技集团股份有限公司 薄膜晶体管阵列基板及其制备方法、有源矩阵驱动显示装置
CN104576394B (zh) * 2013-10-22 2017-08-08 中国科学院苏州纳米技术与纳米仿生研究所 一种大面积印刷独立碳纳米管薄膜晶体管的制备方法
CN204303793U (zh) * 2014-12-03 2015-04-29 上海蓝沛新材料科技股份有限公司 基于碳纳米管转移和自对准技术的柔性tft 背板
TW201704831A (zh) * 2015-07-31 2017-02-01 凌巨科技股份有限公司 薄膜電晶體結構
CN105932172A (zh) * 2016-05-11 2016-09-07 吉林大学 一种可定量调节功函数的透明叠层电极及其制备工艺

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796121A (en) * 1997-03-25 1998-08-18 International Business Machines Corporation Thin film transistors fabricated on plastic substrates
CN1979912A (zh) * 2005-12-09 2007-06-13 三星Sdi株式会社 有机薄膜晶体管和具有该有机薄膜晶体管的平板显示设备
US20150357480A1 (en) * 2008-09-08 2015-12-10 Gang Yu Stable metal-oxide thin film transistor and method of making
CN103325840A (zh) * 2013-04-15 2013-09-25 北京大学深圳研究生院 薄膜晶体管及其制作方法
CN103545221A (zh) * 2013-11-14 2014-01-29 广州新视界光电科技有限公司 金属氧化物薄膜晶体管及其制备方法
CN105655389A (zh) * 2016-01-15 2016-06-08 京东方科技集团股份有限公司 有源层、薄膜晶体管、阵列基板、显示装置及制备方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114078974A (zh) * 2020-08-21 2022-02-22 天津大学 一种利用高温生长SiO2栅介质层的硅纳米柔性薄膜晶体管制备方法
CN114078974B (zh) * 2020-08-21 2023-09-26 天津大学 一种利用高温生长SiO2栅介质层的硅纳米柔性薄膜晶体管制备方法
CN112490362A (zh) * 2020-11-11 2021-03-12 西安理工大学 一种基于图案化衬底的有机场效应晶体管制备方法
CN113809232A (zh) * 2021-08-25 2021-12-17 西安电子科技大学 物理瞬态阈值开关器件及其制备方法和装置
CN113809232B (zh) * 2021-08-25 2023-05-30 西安电子科技大学 物理瞬态阈值开关器件及其制备方法和装置
CN114242783A (zh) * 2021-11-02 2022-03-25 北京大学深圳研究生院 双栅结构的半导体场效应晶体管及其制造方法
WO2024049675A1 (en) * 2022-08-29 2024-03-07 Tae Technologies, Inc. System and methods for flow and shear flow control of frc plasma

Also Published As

Publication number Publication date
CN107946189B (zh) 2020-07-31
CN107946189A (zh) 2018-04-20

Similar Documents

Publication Publication Date Title
CN107946189B (zh) 一种薄膜晶体管及其制备方法
CN104299915B (zh) 金属氧化物薄膜晶体管制备方法
CN104409518B (zh) 薄膜晶体管及其制备方法
CN104934481B (zh) 一种薄膜晶体管及其制备方法
CN106098784A (zh) 共平面型双栅电极氧化物薄膜晶体管及其制备方法
WO2018223476A1 (zh) 铟镓锌氧化物薄膜晶体管的制作方法
CN107275218B (zh) 一种避免光刻胶沾污的二维材料器件制造方法
CN106128963A (zh) 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板
CN109148303A (zh) 薄膜晶体管的制备方法
CN105374749B (zh) 一种薄膜晶体管及其制造方法
US10777662B2 (en) Thin film transistor and manufacturing method thereof
CN106876281B (zh) 一种薄膜晶体管及其制备方法、阵列基板
CN110164875A (zh) 阵列基板及其制备方法、显示面板、显示装置
CN102915929B (zh) 一种石墨烯场效应器件制备方法
CN109148594B (zh) 一种高性能薄膜晶体管的近室温制备工艺及应用
CN106920847A (zh) 一种顶栅石墨烯场效应晶体管及其制备方法
WO2020252955A1 (zh) 阵列基板的制备方法和制备系统
CN107275219B (zh) 一种石墨烯器件的制造方法
TW201523738A (zh) 薄膜電晶體基板及其製造方法
WO2019095556A1 (zh) 阵列基板、显示面板及阵列基板的制作方法
CN103811556B (zh) 硅衬底的三氧化二铝栅介质双栅石墨烯晶体管及制备方法
CN103840003B (zh) 以三氧化二铝为栅介质的双栅石墨烯晶体管及其制备方法
CN106887386A (zh) 准分子激光退火制备桥式沟道多晶硅薄膜的方法
CN107820640A (zh) 阵列基板及其制造方法
CN116487411A (zh) 一种应变二维半导体晶体管及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17932738

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17932738

Country of ref document: EP

Kind code of ref document: A1