WO2019090921A1 - 一种铜保护剂 - Google Patents
一种铜保护剂 Download PDFInfo
- Publication number
- WO2019090921A1 WO2019090921A1 PCT/CN2017/117735 CN2017117735W WO2019090921A1 WO 2019090921 A1 WO2019090921 A1 WO 2019090921A1 CN 2017117735 W CN2017117735 W CN 2017117735W WO 2019090921 A1 WO2019090921 A1 WO 2019090921A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- bromo
- protectant
- copper protectant
- butyl
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 39
- 239000010949 copper Substances 0.000 title claims abstract description 39
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 7
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 claims description 26
- -1 bromo alkane Chemical class 0.000 claims description 25
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 21
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 16
- 239000012043 crude product Substances 0.000 claims description 16
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 10
- HLVFKOKELQSXIQ-UHFFFAOYSA-N 1-bromo-2-methylpropane Chemical compound CC(C)CBr HLVFKOKELQSXIQ-UHFFFAOYSA-N 0.000 claims description 9
- UPSXAPQYNGXVBF-UHFFFAOYSA-N 2-bromobutane Chemical compound CCC(C)Br UPSXAPQYNGXVBF-UHFFFAOYSA-N 0.000 claims description 9
- RKSOPLXZQNSWAS-UHFFFAOYSA-N tert-butyl bromide Chemical compound CC(C)(C)Br RKSOPLXZQNSWAS-UHFFFAOYSA-N 0.000 claims description 9
- 238000004440 column chromatography Methods 0.000 claims description 8
- 238000004821 distillation Methods 0.000 claims description 8
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 8
- MPPPKRYCTPRNTB-UHFFFAOYSA-N 1-bromobutane Chemical compound CCCCBr MPPPKRYCTPRNTB-UHFFFAOYSA-N 0.000 claims description 7
- 150000008282 halocarbons Chemical class 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 4
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 10
- 239000000047 product Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- TWLNVQNCJFIEEU-UHFFFAOYSA-N [N].CC(C)=O Chemical compound [N].CC(C)=O TWLNVQNCJFIEEU-UHFFFAOYSA-N 0.000 description 6
- 150000001347 alkyl bromides Chemical group 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 239000012264 purified product Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000004949 mass spectrometry Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- MPPPKRYCTPRNTB-DOMIDYPGSA-N 1-bromobutane Chemical group CCC[14CH2]Br MPPPKRYCTPRNTB-DOMIDYPGSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000003223 protective agent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000006176 2-ethylbutyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(C([H])([H])*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004493 2-methylbut-1-yl group Chemical group CC(C*)CC 0.000 description 1
- 125000003229 2-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000003542 3-methylbutan-2-yl group Chemical group [H]C([H])([H])C([H])(*)C([H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C319/00—Preparation of thiols, sulfides, hydropolysulfides or polysulfides
- C07C319/02—Preparation of thiols, sulfides, hydropolysulfides or polysulfides of thiols
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C321/00—Thiols, sulfides, hydropolysulfides or polysulfides
- C07C321/02—Thiols having mercapto groups bound to acyclic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C321/00—Thiols, sulfides, hydropolysulfides or polysulfides
- C07C321/02—Thiols having mercapto groups bound to acyclic carbon atoms
- C07C321/04—Thiols having mercapto groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/02—Lithium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/16—Sulfur-containing compounds
Definitions
- the present invention relates to the field of LCD processes, and in particular to a copper protector.
- a metal electrode is generally formed by a chemical etching method. Specifically, first, the photoresist of the surface of the metal layer is patterned to define a photoresist layer; then the region not protected by the photoresist layer is etched away by chemicals; finally, the photoresist is used using a photoresist stripper The layer is peeled off to complete the patterning process of the metal layer.
- the photoresist stripper is usually an organic system and is alkaline. During the stripping process, a portion of the photoresist stripper used to break down the photoresist will simultaneously attack the copper, causing corrosion of the copper. Therefore, a copper protective agent is generally added to the stripping solution to reduce corrosion of copper.
- the present invention first provides a copper protectant represented by the general formula (GI):
- R is a linear or branched alkyl group having 1 to 20 carbon atoms.
- the R is a linear or branched alkyl group having 1 to 10 carbon atoms.
- the R is methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, 2-ethylbutyl, n-pentyl, isopentyl, 1-methylpentyl, 1,3-dimethylbutyl, n-hexyl, 1-methylhexyl, n-heptyl, isoheptyl, 1,1,3,3-tetramethylbutyl, 1- Methylheptyl, 3-methylheptyl, n-octyl, 2-ethylhexyl, 1,1,3-trimethylhexyl, 1,1,3,3-tetramethylpentyl, fluorenyl or ⁇ .
- the R is n-butyl, sec-butyl, isobutyl or tert-butyl.
- the copper protectant is represented by one of the formulae (F1) to (F4):
- the invention also provides a method for preparing the above copper protective agent.
- the method comprises the steps (S1): adding n-butyllithium to a solution of a halogenated hydrocarbon in tetrahydrofuran under the protection of an inert gas at -78 ° C; (S2) adding sulfur powder to the reaction system, and gradually increasing to room temperature. And reacting at room temperature; (S3) extracting the reaction system with an organic solvent to obtain a crude product; And, (S4) purifying the crude product by column chromatography or distillation to obtain a purified copper protectant.
- the organic solvent in the step (S3) is dichloromethane or diethyl ether.
- the mass ratio of the sulfur powder to the halogenated hydrocarbon in the step (S2) ranges from 1:1 to 1:1.5.
- the halogenated hydrocarbon in step (S1) is a brominated hydrocarbon, and preferably, the halogenated hydrocarbon is a monobromohydrocarbon.
- the bromo alkane is 1-bromobutane, 2-bromobutane, 1-bromo-2-methylpropane or 2-bromo-2-methylpropane.
- a method of making the above copper protectant comprises the steps of: a. in a liquid nitrogen acetone bath (at -78 ° C), under an inert gas, a solution of 1.2 equivalents of n-butyl lithium relative to the alkyl bromide in a solution of the alkyl bromide in tetrahydrofuran; b. Add 1.5 equivalents of sulfur powder relative to the alkyl bromide to the reaction system, gradually increase to room temperature, and react at room temperature; c. extract the reaction system with an organic solvent to obtain a crude product; and, d.
- bromo alkane is selected from the group consisting of 1-bromobutane, 2-bromobutane, 1-bromo-2-methylpropane, and A group consisting of 2-bromo-2-methylpropane.
- linear or branched alkyl group having 1 to 20 carbon atoms is, for example but not limited to, methyl, ethyl, isopropyl, n-propyl, isobutyl, n-butyl Base, tert-butyl, n-pentyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1,1-dimethylpropyl, 1,2-dimethylpropyl , 2,2-dimethylpropyl, 1-ethylpropyl, n-hexyl, n-heptyl, n-octyl, ethylhexyl, n-decyl, n-decyl, n-undecyl, n-decyl Alkyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadec
- the 1-bromobutane has a chemical accession number (CAS number) of 109-65-9, the 2-bromobutane has a CAS number of 78-76-2, and the 1-bromo-2-methylpropane The CAS number is 78-77-3 and the 2-bromo-2-methylpropane has a CAS number of 507-19-7.
- the action of the SH reactive group and copper reduces the corrosion of copper in an alkaline environment.
- the R group ensures that the copper protectant can have greater solubility in the stripper.
- the copper protectant of the present invention can be added to the existing photoresist stripping solution to avoid corrosion of the photoresist by the photoresist stripping solution during the stripping process.
- a copper protectant is provided, represented by the general formula (GI): Wherein R is a linear or branched alkyl group having 1 to 20 carbon atoms.
- n-butyllithium (usually n-butyllithium) relative to the alkyl bromide is added dropwise to a solution of the alkyl bromide in tetrahydrofuran under a nitrogen atmosphere in a liquid nitrogen acetone bath (-78 ° C). The n-hexane solution), kept for half an hour.
- 1.5 equivalents of sulfur powder relative to the alkyl bromide was added to the reaction system, gradually warmed to room temperature, and reacted at room temperature for 1 h.
- the reaction solution was then added to water, and the reaction yielded R-SH was extracted with an organic solvent. Subsequently, the solvent was evaporated to give a crude product of R-SH.
- the crude product is purified by column chromatography or distillation to obtain a purified product.
- the organic solvent is dichloromethane or diethyl ether
- the brominated alkane is 1-bromobutane, 2-bromobutane, 1-bromo-2-methylpropane or 2-bromo-2-methylpropane.
- a copper protectant having the formula (F2):
- the synthetic route of the above copper protectant is as follows:
- a copper protectant having the formula (F3):
- the synthetic route of the above copper protectant is as follows:
- the reaction solution was added to water, and extracted with dichloromethane or diethyl ether, and the solvent was evaporated to give a crude product.
- the crude product is purified by column chromatography or distillation to obtain a purified product, which is the target product.
- the mass-to-nuclear ratio (M/Z) value of the target product was 90 by mass spectrometry.
- the reaction solution was added to water, and extracted with dichloromethane or diethyl ether, and the solvent was evaporated to give a crude product.
- the crude product is purified by column chromatography or distillation to obtain a purified product, which is the target product.
- the mass-to-nuclear ratio (M/Z) value of the target product was 90 by mass spectrometry.
- the copper protectant of the present invention can be added to the existing photoresist stripping solution to avoid corrosion of the photoresist by the photoresist stripping solution during the stripping process.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
一种铜保护剂，以通式(GI)表示：HS—R(GI)，其中，R为具有1至10个碳原子的直链或支链烷基。
Description
本发明涉及LCD制程领域，特别涉及一种铜保护剂。
在TFT-LCD的生产过程中，一般以化学蚀刻的方法形成金属电极。具体来说，首先对金属层表面的光阻进行图案化以定义光阻层；然后通过化学药品腐蚀掉未被所述光阻层保护的区域；最后，使用光阻剥离液将所述光阻层剥离，以完成金属层的图案化制程。
所述光阻剥离液通常为有机体系，呈碱性。在剥离过程中，所述光阻剥离液中的部分用于分解光阻的物质会同时对铜进攻，造成铜的腐蚀。因此，在剥离液中一般添加铜保护剂，减少铜的腐蚀。
然而，目前没有关于用于LCD制程的铜保护剂的相关报道。
因此，我们需要一种新的铜保护剂，以解决目前存在的技术问题。
发明内容
本发明的目的在于提供一种铜保护剂，所述铜保护剂可以降低铜在碱性环境中的腐蚀，并且具有合成方法简单、提纯方便等优点。
为了达到上述目的，本发明首先提供一种铜保护剂，以通式(GI)表示：
在本发明一实施例中，所述R为具有1至10个碳原子的直链或支链烷基。例如，所述R为甲基、乙基、丙基、异丙基、正丁基、仲丁基、异丁基、叔丁基、2-乙基丁基、正戊基、异戊基、1-甲基戊基、1，3-二甲基丁基、正己基、1-甲基己基、正庚基、异庚基、1，1，3，3-四甲基丁基、1-甲基庚基、3-甲基庚基、正辛基、2-乙基己基、1，1，3-三甲基己基、1，1，3，3-四甲基戊基、壬基或癸基。
在本发明一实施例中，所述R为正丁基、仲丁基、异丁基或叔丁基。
在本发明一实施例中，所述铜保护剂以分子式(F1)至(F4)之一表示：
本发明还提供上述铜保护剂的制备方法。所述方法包含步骤(S1)在-78℃下，在惰性气体保护下，向卤代烃的四氢呋喃溶液中滴加正丁基锂；(S2)向反应体系加入硫粉，逐渐升至室温，并在室温下反应；(S3)以有机溶剂对所述反应体系进行萃取，获得粗产物；以
及，(S4)以柱层析技术或蒸馏技术提纯所述粗产物，获得纯化的铜保护剂。
在本发明一实施例中，步骤(S3)中的所述有机溶剂为二氯甲烷或乙醚。
在本发明一实施例中，步骤(S2)中所述硫粉与所述卤代烃的质量比范围为1∶1～1∶1.5。
在本发明一实施例中，步骤(S1)中的所述卤代烃为溴代烃，并且优选地，所述卤代烃为一溴代烃。
在本发明一实施例中，所述溴代烷为1-溴丁烷、2-溴丁烷、1-溴-2甲基丙烷或2-溴-2-甲基丙烷。
在本发明一较佳实施例中，提供一种上述铜保护剂的制备方法。所述方法包含步骤：a.在液氮丙酮浴中(-78℃下)，在惰性气体保护下，向溴代烷的四氢呋喃溶液中滴加相对于溴代烷1.2当量的正丁基锂；b.向反应体系加入相对于溴代烷1.5当量的硫粉，逐渐升至室温，并在室温下反应；c.以有机溶剂对所述反应体系进行萃取，获得粗产物；以及，d.以柱层析技术或蒸馏技术提纯所述粗产物，获得纯化的铜保护剂；其中，所述溴代烷选自由1-溴丁烷、2-溴丁烷、1-溴-2甲基丙烷和2-溴-2-甲基丙烷组成的群组。
本领域技术人员可以理解的是，所述具有1至20个碳原子的直链或支链烷基例如但不限于甲基、乙基、异丙基、正丙基、异丁基、正丁基、叔丁基、正戊基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1，1-二甲基丙基、1，2-二甲基丙基、2，2-二甲基丙基、1-乙基丙基、正己基、正庚基、正辛基、乙基己基、正壬基、正癸基、正十一烷基、正十二烷基、正十三烷基、正十四烷基、正十五烷基、正十六烷基、正十七烷基、正十八烷基、正十九烷基或二十烷基。
本领域技术人员可以理解的是，如无特殊说明，本发明中所用试剂均为市售商品。所述1-溴丁烷的化学物质登录号(CAS号)为109-65-9，所述2-溴丁烷的CAS号为78-76-2，所述1-溴-2甲基丙烷的CAS号为78-77-3，所述2-溴-2-甲基丙烷的CAS号为507-19-7。
在本发明的所述铜保护剂中，利用SH活性基团与铜的作用，降低了铜在碱性环境中的腐蚀。同时，R基团则确保所述铜保护剂可以在剥离液中有较大的溶解性。本发明所述的铜保护剂可以加入现有的光阻剥离液中，以在剥离过程中避免所述光阻剥离液对铜的腐蚀。
以下，结合具体实施方式，对本发明的技术进行详细描述。应当知道的是，以下具体实施方式仅用于帮助本领域技术人员理解本发明，而非对本发明的限制。
实施例1
在本实施例中，提供一种铜保护剂，以通式(GI)表示：
其中，R为具有1至20个碳原子的直链或支链烷基。
上述铜保护剂的合成线路如下：
具体来说，在液氮丙酮浴中(-78℃)，在惰性气体保护下，向溴代烷的四氢呋喃溶液中滴加相对于溴代烷1.2当量的正丁基锂(通常是正丁基锂的正己烷溶液)，保温半小时。随后，向反应体系中加入相对于溴代烷1.5当量的硫粉，逐渐升至室温，并在室温下反应1h。随后将反应溶液加入水中，并用有机溶剂将反应产出R-SH萃取出来。随后，蒸干溶剂可得到R-SH粗产物。将粗产物利用柱层析技术或蒸馏技术提纯，可得到纯化产物。其中，所述有机溶剂为二氯甲烷或乙醚，所述溴代烷为1-溴丁烷、2-溴丁烷、1-溴-2甲基丙烷或2-溴-2-甲基丙烷。
实施例2
在本实施例中，提供一种铜保护剂，具有分子式(F1)：
上述铜保护剂的合成线路如下：
具体来说，在液氮丙酮浴中(-78℃)，在惰性气体保护下，向1-溴丁烷的四氢呋喃溶液中滴加相对于1-溴丁烷1.2当量的正丁基锂(通常是正丁基锂的正己烷溶液)，保温半小时。随后，向反应体系中加入相对于1-溴丁烷1.5当量的硫粉，逐渐升至室温，并在室温下反应1小时。随后将反应溶液加入水中，并用二氯甲烷或乙醚进行萃取，蒸干溶剂可得到粗产物。将粗产物利用柱层析技术或蒸馏技术提纯，可得到纯化产物，即为目标产物。经质谱分析，目标产物的质核比(M/Z)值为90。
实施例3
在本实施例中，提供一种铜保护剂，具有分子式(F2)：
上述铜保护剂的合成线路如下：
具体来说，在液氮丙酮浴中(-78℃)，在惰性气体保护下，向2-溴丁烷的四氢呋喃溶液中滴加相对于2-溴丁烷1.2当量的正丁基锂(通常是正丁基锂的正己烷溶液)，保温半小时。随后，向反应体系中加入相对于2-溴丁烷1.5当量的硫粉，逐渐升至室温，并在室温下反应1小时。随后将反应溶液加入水中，并用二氯甲烷或乙醚进行萃取，蒸干溶剂可得到粗产物。将粗产物利用柱层析技术或蒸馏技术提纯，可得到纯化产物，即为目标产物。经质谱分析，目标产物的质核比(M/Z)值为90。
实施例4
在本实施例中，提供一种铜保护剂，具有分子式(F3)：
上述铜保护剂的合成线路如下：
具体来说，在液氮丙酮浴中(-78℃)，在惰性气体保护下，向1-溴-2甲基丙烷的四氢呋喃溶液中滴加相对于1-溴-2甲基丙烷1.2当量的正丁基锂(通常是正丁基锂的正己烷溶液)，保温半小时。随后，向反应体系中加入相对于1-溴-2甲基丙烷1.5当量的硫粉，逐渐升至室温，并在室温下反应1小时。随后将反应溶液加入水中，并用二氯甲烷或乙醚进行萃取，蒸干溶剂可得到粗产物。将粗产物利用柱层析技术或蒸馏技术提纯，可得到纯化产物，即为目标产物。经质谱分析，目标产物的质核比(M/Z)值为90。
实施例5
在本实施例中，提供一种铜保护剂，具有分子式(F4)：
上述铜保护剂的合成线路如下：
具体来说，在液氮丙酮浴中(-78℃)，在惰性气体保护下，向2-溴-2甲基丙烷的四氢呋喃溶液中滴加相对于2-溴-2甲基丙烷1.2当量的正丁基锂(通常是正丁基锂的正己烷溶
液)，保温半小时。随后，向反应体系中加入相对于2-溴-2甲基丙烷1.5当量的硫粉，逐渐升至室温，并在室温下反应1小时。随后将反应溶液加入水中，并用二氯甲烷或乙醚进行萃取，蒸干溶剂可得到粗产物。将粗产物利用柱层析技术或蒸馏技术提纯，可得到纯化产物，即为目标产物。经质谱分析，目标产物的质核比(M/Z)值为90。
本发明所述的铜保护剂可以加入现有的光阻剥离液中，以在剥离过程中避免所述光阻剥离液对铜的腐蚀。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。
Claims (9)
- 一种铜保护剂，以通式(GI)表示：HS——R(GI)，其中，R为具有1至20个碳原子的直链或支链烷基。
- 如权利要求1所述的铜保护剂，其中，所述R为具有1至10个碳原子的直链或支链烷基。
- 如权利要求1所述的铜保护剂，其中，所述R为正丁基、仲丁基、异丁基或叔丁基。
- 如权利要求1所述的铜保护剂，以分子式(F1)至(F4)之一表示：
- 一种制备权利要求1所述的铜保护剂的方法，包含步骤(S1)在-78℃下，在惰性气体的保护下，向卤代烃的四氢呋喃溶液中滴加正丁基锂；(S2)向反应体系加入硫粉，逐渐升至室温，并在室温下反应；(S3)以有机溶剂对所述反应体系进行萃取，获得粗产物；以及，(S4)以柱层析技术或蒸馏技术提纯所述粗产物，获得纯化的铜保护剂。
- 如权利要求5所述的方法，其中，步骤(S3)中的所述有机溶剂为二氯甲烷或乙醚。
- 如权利要求5所述的方法，其中，步骤(S2)中所述硫粉与所述卤代烃的质量比范围为1∶1～1∶1.5。
- 如权利要求5所述的方法，其中，步骤(S1)中的所述卤代烃为溴代烃。
- 如权利要求8所述的方法，其中，所述溴代烷选自包含1-溴丁烷、2-溴丁烷、1-溴-2甲基丙烷和2-溴-2-甲基丙烷组成的群组。
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| CN101607927A (zh) * | 2008-06-19 | 2009-12-23 | 天津市化学试剂研究所 | 正十二烷基硫醇的制备方法 |
| CN101925553A (zh) * | 2007-11-21 | 2010-12-22 | 恩索恩公司 | 防失光泽性涂料 |
| WO2011104614A1 (en) * | 2010-02-24 | 2011-09-01 | Mesa S.A.S. Di Malimpensa Simona E Davide E C. | Method for protecting silver and silver alloy surfaces against tarnishing |
| CN105624687A (zh) * | 2016-01-11 | 2016-06-01 | 国家电网公司 | 一种发电机内冷水空芯铜导线复合缓蚀剂及其应用 |
| CN105921388A (zh) * | 2016-05-20 | 2016-09-07 | 依波精品（深圳）有限公司 | 一种金合金制品防腐蚀表面处理方法 |
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| WO2010035258A2 (en) * | 2008-09-25 | 2010-04-01 | Nanoready Ltd. | Discrete metallic copper nanoparticles |
| CN104918414A (zh) * | 2015-05-26 | 2015-09-16 | 复旦大学 | 一种导电线路的模板电镀剥离工艺 |
| CN106380431B (zh) * | 2016-02-01 | 2018-03-23 | 湘潭大学 | 1，4‑二烷硫基苯及其卤化物的合成方法 |
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| CN101925553A (zh) * | 2007-11-21 | 2010-12-22 | 恩索恩公司 | 防失光泽性涂料 |
| CN101607927A (zh) * | 2008-06-19 | 2009-12-23 | 天津市化学试剂研究所 | 正十二烷基硫醇的制备方法 |
| WO2011104614A1 (en) * | 2010-02-24 | 2011-09-01 | Mesa S.A.S. Di Malimpensa Simona E Davide E C. | Method for protecting silver and silver alloy surfaces against tarnishing |
| CN105624687A (zh) * | 2016-01-11 | 2016-06-01 | 国家电网公司 | 一种发电机内冷水空芯铜导线复合缓蚀剂及其应用 |
| CN105921388A (zh) * | 2016-05-20 | 2016-09-07 | 依波精品（深圳）有限公司 | 一种金合金制品防腐蚀表面处理方法 |
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