WO2019085479A1 - 一种无支架的封装 led 光源及其制备方法 - Google Patents

一种无支架的封装 led 光源及其制备方法 Download PDF

Info

Publication number
WO2019085479A1
WO2019085479A1 PCT/CN2018/090348 CN2018090348W WO2019085479A1 WO 2019085479 A1 WO2019085479 A1 WO 2019085479A1 CN 2018090348 W CN2018090348 W CN 2018090348W WO 2019085479 A1 WO2019085479 A1 WO 2019085479A1
Authority
WO
WIPO (PCT)
Prior art keywords
specifically
silver
machine
finished product
mold
Prior art date
Application number
PCT/CN2018/090348
Other languages
English (en)
French (fr)
Inventor
屈军毅
马志华
Original Assignee
深圳市立洋光电子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市立洋光电子股份有限公司 filed Critical 深圳市立洋光电子股份有限公司
Publication of WO2019085479A1 publication Critical patent/WO2019085479A1/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the invention relates to a packageless LED light source without a support and a preparation method thereof.
  • the general packaging method of the existing LED light source is through the PCB or the bracket as the carrier.
  • the solid soldering point powder is used, and the substrate is indispensable.
  • the material of the substrate is usually composed of plastic and metal, such as traditional SMD patch brackets, as well as EMC brackets, such brackets usually have poor sealing and poor bonding with glue, and the cost of the brackets will increase.
  • the present invention provides a stentless packaged LED light source and a method of fabricating the same.
  • An unsupported packaged LED light source comprising a silver plated copper sheet, a first top mold, a wafer and a second top mold, wherein the first mold top is provided on the silver plated copper sheet and a first top mold is connected, the wafer is disposed on the first top mold and connected to the first top mold, and the second top mold is encapsulated on the first top mold and The wafer is encapsulated within the second top mold.
  • the wafer is a wafer.
  • a solid glue is disposed between the silver-plated copper sheet and the wafer, and the silver-plated copper sheet is connected to the wafer by the solid glue.
  • the electrode of the wafer is connected to the silver-plated copper sheet by a gold wire.
  • the wafer is a flip chip.
  • solder paste is disposed between the silver plated copper sheet and the flip chip, and the silver plated copper sheet and the flip chip are connected by the solder paste.
  • a phosphor is further included, the phosphor being coated on the wafer.
  • Another object of the present invention is to provide a method for preparing a package-free packaged LED light source, comprising:
  • S2 Making silver-plated copper sheets, specifically: including:
  • S201 determining a copper plate, specifically: determining a material of the copper plate and a thickness and a width of the copper plate;
  • etching operation specifically: etching the copper plate, removing the protective film to be etched, contacting the chemical solution during etching, and achieving the effect of dissolving corrosion to form irregularities or hollowing out;
  • micro-roughening treatment specifically: the copper-plated sheet is subjected to etching treatment, and then the copper-plated sheet is subjected to micro-roughening treatment, and the surface of the copper-plated sheet is processed to obtain a microscopic rough structure, which is changed from hydrophobic to hydrophobic. Hydrophilic, used to improve the adhesion of the surface of the copper plate to the silver layer;
  • S204 silver plating operation, specifically: after the copper plate is subjected to micro-roughening treatment, and then the silver plating layer is performed on the surface of the copper plating sheet, and the thickness of the silver plating layer is determined according to different requirements of product quality, generally plating The thickness of the silver layer is 1 to 4 um;
  • S205 slicing operation: specifically: cutting the finished silver-plated copper sheet by using a cutting die, and cutting the size is 110-180 mm;
  • the LED packaging process in the silver-plated copper sheet comprises a packaging process of placing the wafer on the silver-plated copper sheet, comprising:
  • S3102 Expanding operation, specifically: expanding the wafer to facilitate the die bonding operation
  • S3103 Point solid crystal glue operation, specifically: the solid crystal glue needs to be selected according to the type of the wafer to be loaded;
  • S3104 solid crystal working, specifically: using a solid crystal machine for solid crystal working;
  • S3105 baking operation, specifically: placing the solid crystal semi-finished product into the oven for baking, and the baking temperature and time requirement are determined by the solid crystal glue;
  • S3106 welding wire operation, specifically: after the baking is completed, the wire bonding operation is performed by the wire bonding machine;
  • S3107 Spray phosphor operation: Specifically: in order to make the fixed solder semi-finished product better combined with the top mold glue, the plasma machine is first cleaned before spraying the phosphor powder, and the parameters of the plasma machine can be determined by the test of the water drop angle machine. When the water drop angle is less than 5 degrees, the powder can be started to be sprayed. During the operation, the material is stored in the material box. When it is idle, it is placed in the moisture-proof box. When the phosphor powder is sprayed, the fixed-welded semi-finished product is fixed by the powder-spraying fixture, and then the powder-spraying machine is fixed. Spraying on the table;
  • baking operation specifically: the baking condition depends on the characteristics of the powder coating glue, firstly performing low temperature curing and then performing high temperature long baking;
  • mold top operation specifically: the powder cleaning semi-finished product is plasma-cleaned by plasma cleaning machine, and then the mold top is carried out through the die top machine and the mold.
  • the design of the mold top mold depends on the outer dimensions and luminous angle requirements of the finished product of the LED light source. ;
  • baking operation specifically: after the die top operation is completed, the mold top semi-finished product is baked in the oven, and the baking temperature depends on the characteristics of the top rubber;
  • Cutting operation specifically: placing the baked mold top semi-finished product on the film laminating machine, attaching the UV film through the laminating machine, attaching the UV film to fix the mold top semi-finished product, and then placing the UV film top mold semi-finished product
  • the cutting machine pre-programs the cutting procedure according to the position of the silver-plated copper cutting path and the finished product size, and then performs the cutting operation. After the cutting is completed, it is put into the UV dissolving machine to disassemble and facilitate the removal of the single piece. s material;
  • S3112 Baking operation, specifically: since the cutting process uses cutting water to immerse through the product, it is necessary to bake and bake the principle to bake the water to dry;
  • S3113 Splitting operation, specifically: splitting a single finished LED light source by a spectrometer according to the requirements of the production color zone;
  • S3114 Taping operation, specifically: the splitting semi-finished product is taped for easy storage and SMT process use;
  • S3115 Packing into the warehouse, specifically: the finished LED products are vacuum-packed with anti-static bags, and then stored in the warehouse.
  • the LED packaging process on the silver-plated copper sheet comprises a flip-chip packaging process on the silver-plated copper sheet, comprising:
  • the crystal expansion operation is specifically: expanding the flip chip to facilitate the die bonding operation
  • S3203 Printing solder paste operation, specifically: printing the solder paste on the position of the silver plated copper plate solid crystal by the printing machine, the size of the printing stencil opening is determined by the size of the flip chip pad, and the solder paste particle size is determined by the wafer size.
  • S3204 a die bonding operation, specifically: fixing a flip chip to a position where a solder paste is printed, and then performing a die bonding operation using a die bonding machine;
  • Reflow soldering operation specifically: placing the solid crystal semi-finished product in a reflow soldering machine for reflow soldering operation
  • S3206 Spray phosphor operation: Specifically: in order to make the fixed solder semi-finished product better combined with the top mold glue, the plasma machine is first cleaned before spraying the phosphor powder, and the parameters of the plasma machine can be determined by the test of the water drop angle machine. When the water drop angle is less than 5 degrees, the powder can be started to be sprayed. During the operation, the material is stored in the material box. When it is idle, it is placed in the moisture-proof box. When the phosphor powder is sprayed, the fixed-welded semi-finished product is fixed by the powder-spraying fixture, and then the powder-spraying machine is fixed. Spraying on the table;
  • baking operation specifically: the baking condition depends on the characteristics of the powder coating glue, firstly performing low temperature curing and then performing high temperature long baking;
  • mold top operation specifically: the powder cleaning semi-finished product is plasma-cleaned by plasma cleaning machine, and then the mold top is carried out through the die top machine and the mold.
  • the design of the mold top mold depends on the outer dimensions and luminous angle requirements of the finished product of the LED light source. ;
  • Baking operation specifically: after the die top operation is completed, the mold top semi-finished product is baked in the oven, and the baking temperature depends on the characteristics of the die top glue;
  • S3210 Cutting operation, specifically: placing the baked mold top semi-finished product on the film laminating machine, attaching the UV film through the laminating machine, attaching the UV film to fix the mold top semi-finished product, and then placing the UV film-topping semi-finished product
  • the cutting machine pre-programs the cutting procedure according to the position of the silver-plated copper cutting path and the finished product size, and then performs the cutting operation. After the cutting is completed, it is put into the UV dissolving machine to disassemble and facilitate the removal of the single piece. s material;
  • S3211 Baking operation, specifically: since the cutting process uses cutting water to immerse through the product, it is necessary to bake and bake the principle to bake the water dry;
  • S3212 Splitting operation, specifically: splitting a single finished LED light source by a spectrometer according to the requirements of the production color zone;
  • S3213 Taping operation, specifically: the splitting semi-finished product is taped for easy storage and SMT process use;
  • S3214 Packing into the warehouse, specifically: the finished LED products are vacuum-packed with anti-static bags, and then stored in the warehouse.
  • the invention according to the above aspect has the beneficial effects that the unsupported packaged LED light source provided by the invention is packaged with a die top glue after the silver plated copper sheet is welded, thereby improving the sealing property and providing the silver plated copper sheet and the
  • the combination of die top glue at the same time eliminates the traditional bracket, realizes the bracketless packaging method, greatly reduces the labor cost of the upstream and downstream machines, and saves the cost; the first die top glue can be covered on the silver plated copper sheet. Protects the silver-plated copper sheet from oxidation.
  • Figure 1 is a schematic view showing the structure of a finished product of the present invention.
  • FIG. 2 is a schematic view showing the structure of a flip-chip finished product of the present invention.
  • Figure 3 is a schematic view of a copper sheet of the present invention.
  • Figure 4 is a circuit diagram of an etched copper sheet of the present invention.
  • Figure 5 is a schematic view showing the structure of the molded top of the present invention.
  • Figure 6 is a flow chart showing the preparation of the LED light source of the present invention.
  • Figure 7 is a flow chart showing the fabrication of the silver-plated copper sheet of the present invention.
  • Figure 8 is a diagram showing the packaging process of the wafer of the present invention.
  • Figure 9 is a diagram showing the packaging process of the flip chip of the present invention.
  • 1-plated silver plate 2-first die top glue; 3-positive wafer; 4-solid crystal glue; 5-gold wire; 6-flip wafer; 7-solder paste; 8-second die top glue; 11-copper.
  • a non-supported packaged LED light source comprises a silver plated copper sheet 1, a first die top glue 2, a wafer 3 and a second die top glue 4, and the upper surface of the silver plated copper sheet 1 is provided.
  • the wafer is disposed on the first top adhesive 2 and connected to the first top adhesive 2
  • the second top adhesive seal 8 is mounted on the first mold
  • the top rubber 2 is mounted on the top mold 4 and the wafer is encapsulated.
  • the beneficial effect of the unsupported packaged LED light source provided by the embodiment is that the unsupported packaged LED light source provided by the invention is packaged with a die top adhesive after the silver plated copper sheet 1 is welded, thereby improving the sealing performance and providing
  • the combination of silver-plated copper sheet 1 and die top glue eliminates the traditional bracket and realizes the bracketless packaging method, which greatly reduces the labor cost of the upstream and downstream machines and saves the cost; the first die top glue 2 Covering the silver-plated copper sheet 1 can protect the silver-plated copper sheet 1 from oxidation.
  • a phosphor is also included, the phosphor is coated on the wafer. Coating the phosphor on the wafer can be done as an LED source that emits white light.
  • the wafer is a wafer 300.
  • a solid glue 4 is disposed between the silver-plated copper sheet 1 and the wafer 300, and the silver-plated copper sheet 1 and the wafer 300 are joined by a die bond 4.
  • the electrode of the wafer 3 is attached to the silver-plated copper sheet 1 by a gold wire 5.
  • the solid glue 4 is selected according to the type of the wafer 3 to be mounted, the vertical wafer 3 is fixed by silver paste, and the wafer 4 is fixed by an insulating glue.
  • the wafer is a flip chip 6.
  • a solder paste 7 is disposed between the silver plated copper sheet 1 and the flip chip 6, and the silver plated copper sheet 1 and the flip chip 6 are connected by a solder paste 7.
  • the size of the solder paste 7 particles is determined by the size of the flip chip 6. In this embodiment, 4# powder and 5# powder are mainly used, and a high temperature solder paste is used.
  • the silver plated copper sheet comprises a copper sheet 11 and a silver layer, the copper sheet being plated with a silver layer.
  • the copper sheet 11 has a thickness of 0.1 mm to 0.35 mm, and the copper sheet 11 has a width of not more than 80 mm.
  • the thickness of the copper sheet 11 is 0.25 mm; in one embodiment, the width of the copper sheet 11 is 60 mm; in one embodiment, the width of the width of the copper 11, 11 is 75 mm;
  • the length of one roll of copper 11 is 100 to 200 m, and the specific length needs to be determined according to the thickness of the copper piece.
  • the material of the substrate of the silver-plated copper sheet 1 is Alloy-194 or C19200.
  • the material of the silver-plated copper sheet 1 is red copper.
  • the present invention further provides a method for preparing a package-free packaged LED light source, comprising:
  • S2 Making silver-plated copper sheets, specifically: including:
  • S201 determining a copper plate, specifically: determining a material of the copper plate and a thickness and a width of the copper plate;
  • etching operation specifically: etching the copper plate, removing the protective film to be etched, contacting the chemical solution during etching, and achieving the effect of dissolving corrosion to form irregularities or hollowing out;
  • the etching process is a technique of removing a material using a chemical reaction or a physical impact, a temperature-division etching and a dry etching, and etching is also called photochemical etching.
  • wet etching is employed, and an etching line is designed according to product specifications.
  • etching is as follows: material opening - material preparation - material cleaning - drying - filming or coating - drying - exposure - development - drying - etching - stripping - completion;
  • micro-roughening treatment specifically: the copper-plated sheet is subjected to etching treatment, and then the copper-plated sheet is subjected to micro-roughening treatment, and the surface of the copper-plated sheet is processed to obtain a microscopic rough structure, which is changed from hydrophobic to hydrophobic. Hydrophilic, used to improve the adhesion of the surface of the copper plate to the silver layer;
  • Micro-roughening is the treatment of the surface of the workpiece by mechanical or chemical methods, that is, the surface of the workpiece is treated by mechanical abrasion or chemical corrosion, and the surface of the copper is micro-roughened, and the surface of the micro-roughened surface can significantly improve the surface of the metal.
  • the true surface area which in turn increases the adhesion of the copper surface to the silver layer;
  • S204 silver plating operation, specifically: after the copper plate is subjected to micro-roughening treatment, and then the silver plating layer is performed on the surface of the copper plating sheet, and the thickness of the silver plating layer is determined according to different requirements of product quality, generally plating The thickness of the silver layer is 1 to 4 um;
  • the silver plating is nickel silver, the other silver plating is full plating and selective plating, the whole plating is to plate the whole copper sheet with silver, and the selective plating is only the plating functional area, the invention is applicable, and the selective plating is selected for cost saving.
  • S205 slicing operation: specifically: cutting the finished silver-plated copper sheet by using a cutting die, and cutting the size is 110-180 mm;
  • the method for preparing the LED light source without the bracket is provided by the embodiment, and the method for preparing the LED light source without the bracket is provided by the method, and the method is simple, The sealing property is improved, the combination of the silver-plated copper sheet and the mold top glue is provided, and the conventional bracket is eliminated, and the bracketless packaging method is realized, the labor cost of the upstream and downstream machines is greatly reduced, and the cost is saved.
  • the LED packaging process on the silver-plated copper sheet includes a package process of mounting a wafer on the silver-plated copper sheet, including:
  • Preparing materials specifically: preparing materials including silver plating copper sheet, solid crystal glue, wafer, solid crystal glue required for solid crystal thawing and stirring in advance 2H, according to the width of the copper sheet, a predetermined material box is used for Solid crystal solid crystal machine, etc.
  • S3102 Expanding operation, specifically: expanding the wafer to facilitate the die bonding operation
  • S3103 Point solid crystal glue operation, specifically: the solid crystal glue needs to be selected according to the type of the wafer to be mounted.
  • the solid crystal glue is selected according to the type of the wafer to be loaded, the vertical formal wafer is fixed with silver glue, and the flat formal wafer is filled with insulating glue. Solid crystal.
  • S3104 solid crystal working, specifically: using a solid crystal machine for solid crystal working;
  • S3105 baking operation, specifically: placing the solid crystal semi-finished product into the oven for baking, and the baking temperature and time requirement are determined by the solid crystal glue;
  • S3106 welding wire operation, specifically: after the baking is completed, the wire bonding operation is performed by the wire bonding machine;
  • S3107 Spray phosphor operation: Specifically: in order to make the fixed solder semi-finished product better combined with the top mold glue, the plasma machine is first cleaned before spraying the phosphor powder, and the parameters of the plasma machine can be determined by the test of the water drop angle machine. When the water drop angle is less than 5 degrees, the powder can be started to be sprayed. During the operation, the material is stored in the material box. When it is idle, it is placed in the moisture-proof box. When the phosphor powder is sprayed, the fixed-welded semi-finished product is fixed by the powder-spraying fixture, and then the powder-spraying machine is fixed. Spraying on the table; the mixing ratio of the powdered glue is determined by the set parameters of the finished LED light source;
  • baking operation specifically: the baking condition depends on the characteristics of the powder coating glue, firstly performing low temperature curing and then performing high temperature long baking;
  • mold top operation specifically: the powder cleaning semi-finished product is plasma-cleaned by plasma cleaning machine, and then the mold top is carried out through the die top machine and the mold.
  • the design of the mold top mold depends on the outer dimensions and luminous angle requirements of the finished product of the LED light source. ;
  • baking operation specifically: after the die top operation is completed, the mold top semi-finished product is baked in the oven, and the baking temperature depends on the characteristics of the top rubber;
  • Cutting operation specifically: placing the baked mold top semi-finished product on the film laminating machine, attaching the UV film through the laminating machine, attaching the UV film to fix the mold top semi-finished product, and then placing the UV film top mold semi-finished product
  • the cutting machine pre-programs the cutting procedure according to the position of the silver-plated copper cutting path and the finished product size, and then performs the cutting operation. After the cutting is completed, it is put into the UV dissolving machine to disassemble and facilitate the removal of the single piece. s material;
  • S3112 Baking operation, specifically: since the cutting process uses cutting water to immerse through the product, it is necessary to bake and bake the principle to bake the water to dry;
  • S3113 Splitting operation, specifically: splitting a single finished LED light source by a spectrometer according to the requirements of the production color zone;
  • S3114 Taping operation, specifically: the splitting semi-finished product is taped for easy storage and SMT process use;
  • S3115 Packing into the warehouse, specifically: the finished LED products are vacuum-packed with anti-static bags, and then stored in the warehouse.
  • the LED packaging process on the silver-plated copper sheet includes a flip-chip packaging process on the silver-plated copper sheet, including:
  • the crystal expansion operation is specifically: expanding the flip chip to facilitate the die bonding operation
  • S3203 Printing solder paste operation, specifically: printing the solder paste on the position of the silver plated copper plate solid crystal by the printing machine, the size of the printing stencil opening is determined by the size of the flip chip pad, and the solder paste particle size is determined by the wafer size.
  • S3204 a die bonding operation, specifically: fixing a flip chip to a position where a solder paste is printed, and then performing a die bonding operation using a die bonding machine;
  • Reflow soldering operation specifically: placing the solid crystal semi-finished product in a reflow soldering machine for reflow soldering operation
  • S3206 Spray phosphor operation: Specifically: in order to make the fixed solder semi-finished product better combined with the top mold glue, the plasma machine is first cleaned before spraying the phosphor powder, and the parameters of the plasma machine can be determined by the test of the water drop angle machine. When the water drop angle is less than 5 degrees, the powder can be started to be sprayed. During the operation, the material is stored in the material box. When it is idle, it is placed in the moisture-proof box. When the phosphor powder is sprayed, the fixed-welded semi-finished product is fixed by the powder-spraying fixture, and then the powder-spraying machine is fixed. Spraying on the table; the mixing ratio of the powdered glue is determined by the set parameters of the finished LED light source;
  • baking operation specifically: the baking condition depends on the characteristics of the powder coating glue, firstly performing low temperature curing and then performing high temperature long baking;
  • mold top operation specifically: the powder cleaning semi-finished product is plasma-cleaned by plasma cleaning machine, and then the mold top is carried out through the die top machine and the mold.
  • the design of the mold top mold depends on the outer dimensions and luminous angle requirements of the finished product of the LED light source. ;
  • Baking operation specifically: after the die top operation is completed, the mold top semi-finished product is baked in the oven, and the baking temperature depends on the characteristics of the die top glue;
  • S3210 Cutting operation, specifically: placing the baked mold top semi-finished product on the film laminating machine, attaching the UV film through the laminating machine, attaching the UV film to fix the mold top semi-finished product, and then placing the UV film-topping semi-finished product
  • the cutting machine pre-programs the cutting procedure according to the position of the silver-plated copper cutting path and the finished product size, and then performs the cutting operation. After the cutting is completed, it is put into the UV dissolving machine to disassemble and facilitate the removal of the single piece. s material;
  • S3211 Baking operation, specifically: since the cutting process uses cutting water to immerse through the product, it is necessary to bake and bake the principle to bake the water dry;
  • S3212 Splitting operation, specifically: splitting a single finished LED light source by a spectrometer according to the requirements of the production color zone;
  • S3213 Taping operation, specifically: the splitting semi-finished product is taped for easy storage and SMT process use;
  • S3214 Packing into the warehouse, specifically: the finished LED products are vacuum-packed with anti-static bags, and then stored in the warehouse.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Packaging Of Annular Or Rod-Shaped Articles, Wearing Apparel, Cassettes, Or The Like (AREA)

Abstract

一种无支架的封装LED光源以及一种无支架的封装LED光源的制备方法,所述无支架的封装LED光源包括镀银铜片(1)、第一模顶胶(2)、晶片(3)及第二模顶胶(8),镀银铜片(1)的上面设有第一模顶胶(2)并与第一模顶胶(2)连接,晶片(3)设于第一模顶胶(2)的上面并与第一模顶胶(2)连接,第二模顶胶(8)封装在第一模顶胶(2)上并将晶片(3)封装在第二模顶胶(8)内。所述制备方法包括:S1:准备材料;S2:制作镀银铜片;S3:在镀银铜片进行LED封装工艺。所述无支架的封装LED光源,将镀银铜片固焊完成后采用模顶胶封装,提高了密封性,提供了镀银铜片与模顶胶的结合性,同时取消了传统的支架,实现了无支架的封装方式,极大地减少了上下游的机台人力成本,节约了成本。

Description

一种无支架的封装LED光源及其制备方法 技术领域
本发明涉及一种无支架的封装LED光源及其制备方法。
背景技术
现有LED光源一般的封装方式都是通过PCB或支架为载体,在此基础上进行固焊点粉,再封装,基板是必不可少的,基板的材质通常由塑胶和金属组成,如传统的SMD贴片支架,以及EMC支架,此类支架通常存在密封性差,与胶水结合性差等问题,另支架成本也会增加。
以上不足,有待改进。
发明内容
为了克服现有的技术的不足,本发明提供一种无支架的封装LED光源及其制备方法。
本发明技术方案如下所述:
一种无支架的封装LED光源,包括镀银铜片、第一模顶胶、晶片及第二模顶胶,所述镀银铜片的上面设有所述第一模顶胶并与所述第一模顶胶连接,所述晶片设于所述第一模顶胶的上面并与所述第一模顶胶连接,所述第二模顶胶封装在所述第一模顶胶上并将所述晶片封装在所述第二模顶胶内。
进一步地,所述晶片为正装晶片。
进一步地,所述镀银铜片与所述正装晶片之间设有固晶胶,所述镀银铜片与所述正装晶片通过所述固晶胶连接。
进一步地,所述正装晶片的电极与所述镀银铜片通过金线连接。
进一步地,所述晶片为倒装晶片。
进一步地,所述镀银铜片与所述倒装晶片之间设有锡膏,所述镀银铜片与所述倒装晶片通过所述锡膏连接。
进一步地,还包括荧光粉,所述荧光粉涂覆与所述晶片上。
本发明的另一个目的在于提供一种无支架的封装LED光源的制备方法,包括:
S1:准备材料;
S2:制作镀银铜片,具体为:包括:
S201:确定镀铜片,具体为:确定镀铜片的材质和镀铜片的厚度和宽度;
S202:蚀刻作业,具体为:对镀铜片进行蚀刻工艺,将要蚀刻区域的保护膜去除,在蚀刻时接触化学溶液,达到溶解腐蚀的作用,使之形成凹凸或者镂空成型的效果;
S203:微粗化处理,具体为:镀铜片进行蚀刻处理后然后进行镀铜片进行微粗化处理,对镀铜片表面进行处理得到一种微观粗糙的结构,使之由憎水性变为亲水性,用来提高镀铜片表面对银层的结合力;
S204:镀银层作业,具体为:镀铜片进行微粗化处理后,然后在镀铜片的表面进行镀银层,镀银层的厚度是根据产品质量的不同的要求而定,一般镀银层的厚度为1~4um;
S205:切片作业:具体为:将制作完成的镀银铜片采用切割模具进行切断,切断尺寸为110~180mm;
S3:在镀银铜片进行LED封装工艺。
进一步地,在所述S3中,在镀银铜片进行LED封装工艺包括在镀银铜片上设置正装晶片的封装工艺,包括:
S3101:准备材料;
S3102:扩晶作业,具体为:将正装晶片扩开,便于固晶作业;
S3103:点固晶胶作业,具体为:固晶胶需根据正装晶片的类别进行选择;
S3104:固晶作业,具体为:采用固晶机进行固晶作业;
S3105:烘烤作业,具体为:将固晶半成品放入烤箱进行烘烤,烘烤温度和时间要求由固晶胶决定;
S3106:焊线作业,具体为:烘烤完成后通过焊线机进行焊线作业;
S3107:喷荧光粉作业:具体为:为了使固焊半成品更好的与模顶胶进行结合,喷荧光粉前先进行等离子机进行清洗,等离子机的参数可以通过水滴角机台的测试进行测定,水滴角度小于5度,则可以开始喷粉,作业过程中材料用料盒存放,闲置时放入防潮箱中,喷荧光粉时通过喷粉治具固定好固焊半成品,再由喷粉机台进行喷涂;
S3108:烘烤作业,具体为:烘烤的条件取决于喷粉胶的特性,先进行低温固化然后进行高温长烤;
S3109:模顶作业,具体为:将喷粉半成品采用等离子清洗机进行等离子清洗,然后通过模顶机台和模具进行模顶,模顶模具的设计取决于LED光源成品的外形尺寸与发光角度要求;
S3110:烘烤作业,具体为:模顶作业完成后,将模顶半成品放烤箱中进行烘烤,烘烤温度取决于模顶胶的特性;
S3111:切割作业,具体为:将烘烤完的模顶半成品放置于贴膜机,通过贴膜机贴UV膜作业,贴UV膜用于固定模顶半成品,再将贴好UV膜的模顶半成品放置于切割机中,切割机预先按镀银铜片切割道位置和成品外形尺寸要求编好切割程序,然后进行切割作业,切割完成后放入UV解胶机中解胶便于取下分好单颗的材料;
S3112:烘烤作业,具体为:由于切割过程采用切割用冷却水浸透过产品,所以需要进行烘烤,烘烤原则以将水份烘烤干即可;
S3113:分光作业,具体为:按生产色区要求用分光机台将分成单颗的成品LED光源进行分光;
S3114:编带作业,具体为:将分光半成品进行编带作业,便于保存和SMT制程使用;
S3115:包装入库,具体为:将编好带的LED成品用防静电袋进行真空包装,完成后入库。
进一步地,在所述S3中,在镀银铜片进行LED封装工艺包括在镀银铜片上设置倒装晶片的封装工艺,包括:
S3201:准备材料;
S3202:扩晶作业,具体为:将倒装晶片扩开,便于固晶作业;
S3203:印刷锡膏作业,具体为:用印刷机将锡膏印刷在镀银铜片固晶的位置上,印刷钢网开孔大小由倒装晶片焊盘大小决定,锡膏颗粒大小由晶片大小决定;
S3204:固晶作业,具体为:将倒装晶片固定在印刷锡膏的位置,然后采用固晶机进行固晶作业;
S3205:回流焊作业,具体为:将固晶半成品放回流焊机中进行回流焊作业;
S3206:喷荧光粉作业:具体为:为了使固焊半成品更好的与模顶胶进行结合,喷荧光粉前先进行等离子机进行清洗,等离子机的参数可以通过水滴角机台的测试进行测定,水滴角度小于5度,则可以开始喷粉,作业过程中材料用料盒存放,闲置时放入防潮箱中,喷荧光粉时通过喷粉治具固定好固焊半成品,再由喷粉机台进行喷涂;
S3207:烘烤作业,具体为:烘烤的条件取决于喷粉胶的特性,先进行低温固化然后进行高温长烤;
S3208:模顶作业,具体为:将喷粉半成品采用等离子清洗机进行等离子清洗,然后通过模顶机台和模具进行模顶,模顶模具的设计取决于LED光源成品的外形尺寸与发光角度要求;
S3209:烘烤作业,具体为:模顶作业完成后,将模顶半成品放烤箱中进行烘烤,烘烤温度取决于模顶胶的特性;
S3210:切割作业,具体为:将烘烤完的模顶半成品放置于贴膜机,通过贴膜机贴UV膜作业,贴UV膜用于固定模顶半成品,再将贴好UV膜的模顶半成品放置于切割机中,切割机预先按镀银铜片切割道位置和成品外形尺寸要求编好切割程序,然后进行切割作业,切割完成后放入UV解胶机中解胶便于取下分好单颗的材料;
S3211:烘烤作业,具体为:由于切割过程采用切割用冷却水浸透过产品,所以需要进行烘烤,烘烤原则以将水份烘烤干即可;
S3212:分光作业,具体为:按生产色区要求用分光机台将分成单颗的成品LED光源进行分光;
S3213:编带作业,具体为:将分光半成品进行编带作业,便于保存和SMT制程使用;
S3214:包装入库,具体为:将编好带的LED成品用防静电袋进行真空包装,完成后入库。
根据上述方案的本发明,其有益效果在于,本发明提供的无支架的封装LED光源,将镀银铜片固焊完成后采用模顶胶封装,提高了密封性,提供了镀银铜片与模顶胶的结合性,同时取消了传统的支架,实现了无支架的封装方式,极大地减少了上下游的机台人力成本,节约了成本;第一模顶胶覆盖在镀银铜片上可以起到保护镀银铜片不受到氧化。
附图说明
图1为本发明的正装成品结构示意图。
图2为本发明的倒装成品结构示意图。
图3为本发明的铜片示意图。
图4为本发明的蚀刻铜片线路图。
图5为本发明的模顶成品结构示意图。
图6为本发明的LED光源的制备流程图。
图7为本发明的镀银铜片的制作流程图。
图8为本发明的正装晶片的封装工艺图。
图9为本发明的倒装晶片的封装工艺图。
在图中,附图标记如下:
1-镀银铜片;2-第一模顶胶;3-正装晶片;4-固晶胶;5-金线;6-倒装晶片;7-锡膏;8-第二模顶胶;11-铜片。
具体实施方式
下面结合附图以及实施方式对本发明进行进一步的描述:
如图1至图5所示,一种无支架的封装LED光源,包括镀银铜片1、第一模顶胶2、晶片3及第二模顶胶4,镀银铜片1的上面设有第一模顶胶2并与第一模顶胶2连接,晶片设于第一模顶胶2的上面并与第一模顶胶2连接,第二模顶胶封8装在第一模顶胶2上并将晶片封装在第二模顶胶4内。
本实施例提供的无支架的封装LED光源的有益效果为:本发明提供的无支架的封装LED光源,将镀银铜片1固焊完成后采用模顶胶封装,提高了密封性,提供了镀银铜片1与模顶胶的结合性,同时取消了传统的支架,实现了无支架的封装方式,极大地减少了上下游的机台人力成本,节约了成本;第一模顶胶2覆盖在镀银铜片1上可以起到保护镀银铜片1不受到氧化。
在一个实施例中,还包括荧光粉,荧光粉涂覆与晶片上。在晶片上涂覆荧光粉可以做成发出白光的LED光源。
在一个实施例中,晶片为正装晶片3。
在一个实施例中,镀银铜片1与正装晶片3之间设有固晶胶4,镀银铜片1与正装晶片3通过固晶胶4连接。
优选地,正装晶片3的电极与镀银铜片1通过金线5连接。固晶胶4按照正装晶片3的类型进行选定,垂直正装晶片3用银胶固晶,平面正装晶片3用绝缘胶固晶。
在一个实施例中,晶片为倒装晶片6。
在一个实施例中,镀银铜片1与倒装晶片6之间设有锡膏7,镀银铜片1与倒装晶片6通过锡膏7连接。锡膏7颗粒的大小由倒装晶片6的大小决定,在本实施例中,以采用4#粉和5#粉为主,并采用高温锡膏。
优选地,镀银铜片包括铜片11和银层,铜片上镀有银层。
优选地,铜片11的厚度为0.1mm~0.35mm,铜片11的宽度不大于80mm。在一个实施例中,铜片11的厚度为0.25mm;在一个实施例中,铜片11的宽度的宽度为60mm;在一个实施例中,铜,11的宽度的宽度为75mm;在一个实施例中,一卷铜片11的长度为100~200m,具体的长度需要根据铜片的厚度来定。
优选地,作为镀银铜片1的基材的材质为Alloy-194或C19200。
优选地,镀银铜片1的材质为红铜。
如图6至图7所示,本发明还提供了一种无支架的封装LED光源的制备方法,包括:
S1:准备材料;
S2:制作镀银铜片,具体为:包括:
S201:确定镀铜片,具体为:确定镀铜片的材质和镀铜片的厚度和宽度;
S202:蚀刻作业,具体为:对镀铜片进行蚀刻工艺,将要蚀刻区域的保护膜去除,在蚀刻时接触化学溶液,达到溶解腐蚀的作用,使之形成凹凸或者镂空成型的效果;
蚀刻工艺是将材料使用化学反应或物理撞击作用而移除的技术,分温蚀刻和干蚀刻,蚀刻也称光化学蚀刻,在本实施例中采用的是湿蚀刻,根据产品规格进行设计蚀刻线路。
蚀刻的具体流程如下:开料-材料准备-材料清洗-烘干-贴膜或涂布-烘干-曝光-显影-烘干-蚀刻-脱膜-完成;
S203:微粗化处理,具体为:镀铜片进行蚀刻处理后然后进行镀铜片进行微粗化处理,对镀铜片表面进行处理得到一种微观粗糙的结构,使之由憎水性变为亲水性,用来提高镀铜片表面对银层的结合力;
微粗化是用机械法或化学方法对工件表面进行处理,即采用机械磨损或化学腐蚀对工件表面进行处理,在铜表面进行微粗化处理,经微粗化的表面可明显提高金属表面的真实表面积,进而提高铜表面对银层的粘附性能;
S204:镀银层作业,具体为:镀铜片进行微粗化处理后,然后在镀铜片的表面进行镀银层,镀银层的厚度是根据产品质量的不同的要求而定,一般镀银层的厚度为1~4um;
镀银为镍上银,另镀银分全镀和选镀,全镀是将整个铜片均镀上银,选镀则是只镀功能区,本发明均适用,为节约成本,选择选镀的方式;
S205:切片作业:具体为:将制作完成的镀银铜片采用切割模具进行切断,切断尺寸为110~180mm;
S3:在镀银铜片进行LED封装工艺。
本实施例提供的一种无支架的封装LED光源的制备方法,本发明提供的无支架的封装LED光源的制备方法,将镀银铜片固焊完成后采用模顶胶封装,其工艺简单,提高了密封性,提供了镀银铜片与模顶胶的结合性,同时取消了传统的支架,实现了无支架的封装方式,极大地减少了上下游的机台人力成本,节约了成本。
如图8所示,在S3中,在镀银铜片进行LED封装工艺包括在镀银铜片上设置正装晶片的封装工艺,包括:
S3101:准备材料,具体为:准备材料包括将固晶所需的镀银铜片、固晶胶、晶片,固晶胶提前2H解冻并搅拌,按铜片宽度开好预定的料盒,用于固晶的固晶机等。
S3102:扩晶作业,具体为:将正装晶片扩开,便于固晶作业;
S3103:点固晶胶作业,具体为:固晶胶需根据正装晶片的类别进行选择,固晶胶根据 正装晶片的类型进行选定,垂直正装晶片用银胶固晶,平面正装晶片用绝缘胶固晶。
S3104:固晶作业,具体为:采用固晶机进行固晶作业;
S3105:烘烤作业,具体为:将固晶半成品放入烤箱进行烘烤,烘烤温度和时间要求由固晶胶决定;
S3106:焊线作业,具体为:烘烤完成后通过焊线机进行焊线作业;
S3107:喷荧光粉作业:具体为:为了使固焊半成品更好的与模顶胶进行结合,喷荧光粉前先进行等离子机进行清洗,等离子机的参数可以通过水滴角机台的测试进行测定,水滴角度小于5度,则可以开始喷粉,作业过程中材料用料盒存放,闲置时放入防潮箱中,喷荧光粉时通过喷粉治具固定好固焊半成品,再由喷粉机台进行喷涂;喷粉胶的配合比由成品LED光源的设定的参数要求而定;
S3108:烘烤作业,具体为:烘烤的条件取决于喷粉胶的特性,先进行低温固化然后进行高温长烤;
S3109:模顶作业,具体为:将喷粉半成品采用等离子清洗机进行等离子清洗,然后通过模顶机台和模具进行模顶,模顶模具的设计取决于LED光源成品的外形尺寸与发光角度要求;
S3110:烘烤作业,具体为:模顶作业完成后,将模顶半成品放烤箱中进行烘烤,烘烤温度取决于模顶胶的特性;
S3111:切割作业,具体为:将烘烤完的模顶半成品放置于贴膜机,通过贴膜机贴UV膜作业,贴UV膜用于固定模顶半成品,再将贴好UV膜的模顶半成品放置于切割机中,切割机预先按镀银铜片切割道位置和成品外形尺寸要求编好切割程序,然后进行切割作业,切割完成后放入UV解胶机中解胶便于取下分好单颗的材料;
S3112:烘烤作业,具体为:由于切割过程采用切割用冷却水浸透过产品,所以需要进行烘烤,烘烤原则以将水份烘烤干即可;
S3113:分光作业,具体为:按生产色区要求用分光机台将分成单颗的成品LED光源进行分光;
S3114:编带作业,具体为:将分光半成品进行编带作业,便于保存和SMT制程使用;
S3115:包装入库,具体为:将编好带的LED成品用防静电袋进行真空包装,完成后入库。
如图8所示,在S3中,在镀银铜片进行LED封装工艺包括在镀银铜片上设置倒装晶片的封装工艺,包括:
S3201:准备材料;
S3202:扩晶作业,具体为:将倒装晶片扩开,便于固晶作业;
S3203:印刷锡膏作业,具体为:用印刷机将锡膏印刷在镀银铜片固晶的位置上,印刷钢网开孔大小由倒装晶片焊盘大小决定,锡膏颗粒大小由晶片大小决定;
S3204:固晶作业,具体为:将倒装晶片固定在印刷锡膏的位置,然后采用固晶机进行固晶作业;
S3205:回流焊作业,具体为:将固晶半成品放回流焊机中进行回流焊作业;
S3206:喷荧光粉作业:具体为:为了使固焊半成品更好的与模顶胶进行结合,喷荧光粉前先进行等离子机进行清洗,等离子机的参数可以通过水滴角机台的测试进行测定,水滴角度小于5度,则可以开始喷粉,作业过程中材料用料盒存放,闲置时放入防潮箱中,喷荧光粉时通过喷粉治具固定好固焊半成品,再由喷粉机台进行喷涂;喷粉胶的配合比由成品LED光源的设定的参数要求而定;
S3207:烘烤作业,具体为:烘烤的条件取决于喷粉胶的特性,先进行低温固化然后进行高温长烤;
S3208:模顶作业,具体为:将喷粉半成品采用等离子清洗机进行等离子清洗,然后通过模顶机台和模具进行模顶,模顶模具的设计取决于LED光源成品的外形尺寸与发光角度 要求;
S3209:烘烤作业,具体为:模顶作业完成后,将模顶半成品放烤箱中进行烘烤,烘烤温度取决于模顶胶的特性;
S3210:切割作业,具体为:将烘烤完的模顶半成品放置于贴膜机,通过贴膜机贴UV膜作业,贴UV膜用于固定模顶半成品,再将贴好UV膜的模顶半成品放置于切割机中,切割机预先按镀银铜片切割道位置和成品外形尺寸要求编好切割程序,然后进行切割作业,切割完成后放入UV解胶机中解胶便于取下分好单颗的材料;
S3211:烘烤作业,具体为:由于切割过程采用切割用冷却水浸透过产品,所以需要进行烘烤,烘烤原则以将水份烘烤干即可;
S3212:分光作业,具体为:按生产色区要求用分光机台将分成单颗的成品LED光源进行分光;
S3213:编带作业,具体为:将分光半成品进行编带作业,便于保存和SMT制程使用;
S3214:包装入库,具体为:将编好带的LED成品用防静电袋进行真空包装,完成后入库。
应当理解的是,对本领域普通技术人员来说,可以根据上述说明加以改进或变换,而所有这些改进和变换都应属于本发明所附权利要求的保护范围。
上面结合附图对本发明专利进行了示例性的描述,显然本发明专利的实现并不受上述方式的限制,只要采用了本发明专利的方法构思和技术方案进行的各种改进,或未经改进将本发明专利的构思和技术方案直接应用于其它场合的,均在本发明的保护范围内。

Claims (10)

  1. 一种无支架的封装LED光源,其特征在于,包括镀银铜片、第一模顶胶、晶片及第二模顶胶,所述镀银铜片的上面设有所述第一模顶胶并与所述第一模顶胶连接,所述晶片设于所述第一模顶胶的上面并与所述第一模顶胶连接,所述第二模顶胶封装在所述第一模顶胶上并将所述晶片封装在所述第二模顶胶内。
  2. 根据权利要求1所述的无支架的封装LED光源,其特征在于,所述晶片为正装晶片。
  3. 根据权利要求2所述的无支架的封装LED光源,其特征在于,所述镀银铜片与所述正装晶片之间设有固晶胶,所述镀银铜片与所述正装晶片通过所述固晶胶连接。
  4. 根据权利要求3所述的无支架的封装LED光源,其特征在于,所述正装晶片的电极与所述镀银铜片通过金线连接。
  5. 根据权利要求1所述的无支架的封装LED光源,其特征在于,所述晶片为倒装晶片。
  6. 根据权利要求5所述的无支架的封装LED光源,其特征在于,所述镀银铜片与所述倒装晶片之间设有锡膏,所述镀银铜片与所述倒装晶片通过所述锡膏连接。
  7. 根据权利要求1所述的无支架的封装LED光源,其特征在于,还包括荧光粉,所述荧光粉涂覆与所述晶片上。
  8. 一种无支架的封装LED光源的制备方法,其特征在于,包括:
    S1:准备材料;
    S2:制作镀银铜片,具体为:包括:
    S201:确定镀铜片,具体为:确定镀铜片的材质和镀铜片的厚度和宽度;
    S202:蚀刻作业,具体为:对镀铜片进行蚀刻工艺,将要蚀刻区域的保护膜去除,在蚀刻时接触化学溶液,达到溶解腐蚀的作用,使之形成凹凸或者镂空成型的效果;
    S203:微粗化处理,具体为:镀铜片进行蚀刻处理后然后进行镀铜片进行微粗化处理,对镀铜片表面进行处理得到一种微观粗糙的结构,使之由憎水性变为亲水性,用来提高镀铜片表面对银层的结合力;
    S204:镀银层作业,具体为:镀铜片进行微粗化处理后,然后在镀铜片的表面进行镀银层,镀银层的厚度是根据产品质量的不同的要求而定,一般镀银层的厚度为1~4um;
    S205:切片作业:具体为:将制作完成的镀银铜片采用切割模具进行切断,切断尺寸为110~180mm;
    S3:在镀银铜片进行LED封装工艺。
  9. 根据权利要求8所述的无支架的封装LED光源的制备方法,其特征在于,在所述S3中,在镀银铜片进行LED封装工艺包括在镀银铜片上设置正装晶片的封装工艺,包括:
    S3101:准备材料;
    S3102:扩晶作业,具体为:将正装晶片扩开,便于固晶作业;
    S3103:点固晶胶作业,具体为:固晶胶需根据正装晶片的类别进行选择;
    S3104:固晶作业,具体为:采用固晶机进行固晶作业;
    S3105:烘烤作业,具体为:将固晶半成品放入烤箱进行烘烤,烘烤温度和时间要求由固晶胶决定;
    S3106:焊线作业,具体为:烘烤完成后通过焊线机进行焊线作业;
    S3107:喷荧光粉作业:具体为:为了使固焊半成品更好的与模顶胶进行结合,喷荧光粉前先进行等离子机进行清洗,等离子机的参数可以通过水滴角机台的测试进行测定,水滴角度小于5度,则可以开始喷粉,作业过程中材料用料盒存放,闲置时放入防潮箱中,喷荧光粉时通过喷粉治具固定好固焊半成品,再由喷粉机台进行喷涂;
    S3108:烘烤作业,具体为:烘烤的条件取决于喷粉胶的特性,先进行低温固化然后进行高温长烤;
    S3109:模顶作业,具体为:将喷粉半成品采用等离子清洗机进行等离子清洗,然后通过模顶机台和模具进行模顶,模顶模具的设计取决于LED光源成品的外形尺寸与发光角度要求;
    S3110:烘烤作业,具体为:模顶作业完成后,将模顶半成品放烤箱中进行烘烤,烘烤温度取决于模顶胶的特性;
    S3111:切割作业,具体为:将烘烤完的模顶半成品放置于贴膜机,通过贴膜机贴UV膜作业,贴UV膜用于固定模顶半成品,再将贴好UV膜的模顶半成品放置于切割机中,切割机预先按镀银铜片切割道位置和成品外形尺寸要求编好切割程序,然后进行切割作业,切割完成后放入UV解胶机中解胶便于取下分好单颗的材料;
    S3112:烘烤作业,具体为:由于切割过程采用切割用冷却水浸透过产品,所以需要进行烘烤,烘烤原则以将水份烘烤干即可;
    S3113:分光作业,具体为:按生产色区要求用分光机台将分成单颗的成品LED光源进行分光;
    S3114:编带作业,具体为:将分光半成品进行编带作业,便于保存和SMT制程使用;
    S3115:包装入库,具体为:将编好带的LED成品用防静电袋进行真空包装,完成后入库。
  10. 根据权利要求8所述的无支架的封装LED光源的制备方法,其特征在于,在所述S3中,在镀银铜片进行LED封装工艺包括在镀银铜片上设置倒装晶片的封装工艺,包括:
    S3201:准备材料;
    S3202:扩晶作业,具体为:将倒装晶片扩开,便于固晶作业;
    S3203:印刷锡膏作业,具体为:用印刷机将锡膏印刷在镀银铜片固晶的位置上,印刷钢网开孔大小由倒装晶片焊盘大小决定,锡膏颗粒大小由晶片大小决定;
    S3204:固晶作业,具体为:将倒装晶片固定在印刷锡膏的位置,然后采用固晶机进行固晶作业;
    S3205:回流焊作业,具体为:将固晶半成品放回流焊机中进行回流焊作业;
    S3206:喷荧光粉作业:具体为:为了使固焊半成品更好的与模顶胶进行结合,喷荧光 粉前先进行等离子机进行清洗,等离子机的参数可以通过水滴角机台的测试进行测定,水滴角度小于5度,则可以开始喷粉,作业过程中材料用料盒存放,闲置时放入防潮箱中,喷荧光粉时通过喷粉治具固定好固焊半成品,再由喷粉机台进行喷涂;
    S3207:烘烤作业,具体为:烘烤的条件取决于喷粉胶的特性,先进行低温固化然后进行高温长烤;
    S3208:模顶作业,具体为:将喷粉半成品采用等离子清洗机进行等离子清洗,然后通过模顶机台和模具进行模顶,模顶模具的设计取决于LED光源成品的外形尺寸与发光角度要求;
    S3209:烘烤作业,具体为:模顶作业完成后,将模顶半成品放烤箱中进行烘烤,烘烤温度取决于模顶胶的特性;
    S3210:切割作业,具体为:将烘烤完的模顶半成品放置于贴膜机,通过贴膜机贴UV膜作业,贴UV膜用于固定模顶半成品,再将贴好UV膜的模顶半成品放置于切割机中,切割机预先按镀银铜片切割道位置和成品外形尺寸要求编好切割程序,然后进行切割作业,切割完成后放入UV解胶机中解胶便于取下分好单颗的材料;
    S3211:烘烤作业,具体为:由于切割过程采用切割用冷却水浸透过产品,所以需要进行烘烤,烘烤原则以将水份烘烤干即可;
    S3212:分光作业,具体为:按生产色区要求用分光机台将分成单颗的成品LED光源进行分光;
    S3213:编带作业,具体为:将分光半成品进行编带作业,便于保存和SMT制程使用;
    S3214:包装入库,具体为:将编好带的LED成品用防静电袋进行真空包装,完成后入库。
PCT/CN2018/090348 2017-10-30 2018-06-08 一种无支架的封装 led 光源及其制备方法 WO2019085479A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711035201.5A CN107634134A (zh) 2017-10-30 2017-10-30 一种无支架的封装led光源及其制备方法
CN201711035201.5 2017-10-30

Publications (1)

Publication Number Publication Date
WO2019085479A1 true WO2019085479A1 (zh) 2019-05-09

Family

ID=61106861

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/090348 WO2019085479A1 (zh) 2017-10-30 2018-06-08 一种无支架的封装 led 光源及其制备方法

Country Status (2)

Country Link
CN (1) CN107634134A (zh)
WO (1) WO2019085479A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107634134A (zh) * 2017-10-30 2018-01-26 深圳市立洋光电子股份有限公司 一种无支架的封装led光源及其制备方法
CN109742215A (zh) * 2019-01-10 2019-05-10 广东品美电子科技有限公司 一种led支架制备工艺
CN110098179B (zh) * 2019-06-11 2024-04-26 郑州胜龙信息技术股份有限公司 发出偏振光的贴片led灯珠及其批量制作方法
CN110164855B (zh) * 2019-06-11 2024-04-26 郑州胜龙信息技术股份有限公司 发出偏振光的贴片led灯珠及其批量制作方法
CN113782471A (zh) * 2021-09-14 2021-12-10 深圳市兆驰晶显技术有限公司 基于led倒装芯片封装技术的led屏封装工艺及led屏
CN114256404B (zh) * 2021-12-08 2023-11-17 中山市木林森电子有限公司 一种网状金属膜及其制备工艺及微小型元器件的制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101694860A (zh) * 2009-10-15 2010-04-14 苏州中泽光电科技有限公司 一种新型led固晶方法
CN202013883U (zh) * 2011-02-15 2011-10-19 晶诚(郑州)科技有限公司 大功率led模块封装结构
CN102760825A (zh) * 2011-04-28 2012-10-31 株式会社东芝 Led封装及其制造方法
CN104821362A (zh) * 2015-03-31 2015-08-05 长治虹源光电科技有限公司 一种基于铁基板的led封装工艺流程
CN105957930A (zh) * 2016-06-07 2016-09-21 共青城超群科技协同创新股份有限公司 一种rgb金属基板的制作方法
CN205723615U (zh) * 2016-06-17 2016-11-23 深圳市斯迈得半导体有限公司 一种基于ncsp封装技术的封装装置
CN107634134A (zh) * 2017-10-30 2018-01-26 深圳市立洋光电子股份有限公司 一种无支架的封装led光源及其制备方法
CN207425914U (zh) * 2017-10-30 2018-05-29 深圳市立洋光电子股份有限公司 一种无支架的封装led光源

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928577A (zh) * 2014-04-02 2014-07-16 陕西光电科技有限公司 一种板式led的封装方法及采用该方法封装的led

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101694860A (zh) * 2009-10-15 2010-04-14 苏州中泽光电科技有限公司 一种新型led固晶方法
CN202013883U (zh) * 2011-02-15 2011-10-19 晶诚(郑州)科技有限公司 大功率led模块封装结构
CN102760825A (zh) * 2011-04-28 2012-10-31 株式会社东芝 Led封装及其制造方法
CN104821362A (zh) * 2015-03-31 2015-08-05 长治虹源光电科技有限公司 一种基于铁基板的led封装工艺流程
CN105957930A (zh) * 2016-06-07 2016-09-21 共青城超群科技协同创新股份有限公司 一种rgb金属基板的制作方法
CN205723615U (zh) * 2016-06-17 2016-11-23 深圳市斯迈得半导体有限公司 一种基于ncsp封装技术的封装装置
CN107634134A (zh) * 2017-10-30 2018-01-26 深圳市立洋光电子股份有限公司 一种无支架的封装led光源及其制备方法
CN207425914U (zh) * 2017-10-30 2018-05-29 深圳市立洋光电子股份有限公司 一种无支架的封装led光源

Also Published As

Publication number Publication date
CN107634134A (zh) 2018-01-26

Similar Documents

Publication Publication Date Title
WO2019085479A1 (zh) 一种无支架的封装 led 光源及其制备方法
CN102354691B (zh) 一种高密度四边扁平无引脚封装及制造方法
CN102339809B (zh) 一种多圈引脚排列四边扁平无引脚封装及制造方法
JP2004048022A (ja) 半導体集積回路装置の製造方法
KR20160136208A (ko) 반도체 장치의 제조 방법 및 반도체 장치
CN103456870B (zh) 荧光粉胶涂覆的cob光源及其制造方法
CN102569101A (zh) 无外引脚封装结构及其制作方法
CN112530896A (zh) 一种用于半导体封装的引线框架及其制备方法
US20130161673A1 (en) Light emitting diode package having fluorescent film directly coated on light emitting diode die and method for manufacturing the same
CN113241338B (zh) 一种无引线预塑封半导体封装支架制备方法
CN103165475B (zh) 一种半导体封装器件的制造方法
CN103165794B (zh) 光学半导体装置用基台、其制造方法以及光学半导体装置
CN207425914U (zh) 一种无支架的封装led光源
CN106816420A (zh) 一种声波元件封装结构及其制造方法
CN103247539B (zh) 引线框架的环氧树脂流出防止方法及用其制造的引线框架
CN112151662A (zh) 一种用玻璃扩散罩的led灯珠制作的电路板模组及其制作方法
CN112151654A (zh) 一种玻璃扩散罩的led灯珠及其制作方法
CN113178393A (zh) 一种半导体成型方法
KR0127308B1 (ko) 저융점 글라스를 사용하여 구성부품들을 접합하는 방법
US6940183B1 (en) Compound filled in lead IC packaging product
US8900926B2 (en) Chip package method
CN217641396U (zh) 一种微型led芯片封装结构
CN104112811A (zh) 一种led的封装方法
TWI375287B (en) Manufacturing process for quad flat non-leaded package
CN112242471A (zh) 一种只有透镜胶封装的led贴片灯珠制作的电路板模组及其制作方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18874322

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18874322

Country of ref document: EP

Kind code of ref document: A1