WO2019075856A1 - 钙钛矿发光二极管及其制作方法 - Google Patents

钙钛矿发光二极管及其制作方法 Download PDF

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WO2019075856A1
WO2019075856A1 PCT/CN2017/113055 CN2017113055W WO2019075856A1 WO 2019075856 A1 WO2019075856 A1 WO 2019075856A1 CN 2017113055 W CN2017113055 W CN 2017113055W WO 2019075856 A1 WO2019075856 A1 WO 2019075856A1
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perovskite
light
layer
emitting
perovskite light
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张育楠
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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Definitions

  • the present invention relates to the field of display technologies, and in particular, to a perovskite light emitting diode and a method of fabricating the same.
  • the perovskite material with ABX 3 as its basic chemical formula is named after the calcium titanate (CaTiO 3 ) compound first found in perovskite.
  • the perovskite structure is characterized in that the X octahedron centered on the B site cation is co-topped and embedded in the tetragonal body with the A site ion as the apex.
  • the cations at positions A and B can be occupied by a single ion or a plurality of ions. According to the types of cations at the A and B sites and their ionic radii, perovskite materials with different microstructure characteristics and ever-changing physical properties can be constructed.
  • Perovskite material is a solution-processable semiconductor material with low cost, high carrier mobility and large light absorption coefficient. In recent years, it has performed very well in the field of solar cells. At the same time, perovskite materials have luminescent properties such as adjustable wavelength and narrow emission spectrum, and have great potential in the fields of electroluminescence and display.
  • the existing perovskite materials generally have poor film forming properties, and the pinholes formed during the film formation process can easily cause the prepared perovskite light-emitting diode device to have a high leakage current and a low current efficiency.
  • the object of the present invention is to provide a method for fabricating a perovskite light-emitting diode, which can improve the film formation property of a perovskite material, reduce the generation of pinholes in the perovskite light-emitting layer, and further improve the luminescence performance of the perovskite light-emitting diode. .
  • Another object of the present invention is to provide a perovskite light-emitting diode, wherein the perovskite light-emitting layer has a good film-forming effect and is substantially free of pinholes, so that the perovskite light-emitting diode has better light-emitting performance.
  • the present invention provides a method for fabricating a perovskite light emitting diode, comprising:
  • the backplane includes a base substrate, a pixel defining layer disposed on the base substrate, a plurality of openings disposed on the pixel defining layer, and being disposed on the base substrate and respectively a plurality of anodes located in a plurality of openings;
  • the perovskite light-emitting layer comprising a perovskite material and a polymer material doped in the perovskite material ;
  • a plurality of cathodes are formed on the plurality of electron transport layers in the plurality of openings, respectively.
  • the mass percentage of the polymer material is 10% to 90%; and the perovskite material in the perovskite light-emitting layer is quantum dot particles.
  • the perovskite material comprises one or more of an organometallic halide perovskite material and an inorganic perovskite material;
  • the organometallic halide perovskite material comprises CH 3 NH 3 PbBr 3 and CH 3 NH One or more of 3 PbI 3 ;
  • the inorganic perovskite material comprises CsPbBr 3 ;
  • the polymer material comprises one or more of a polyimide polymer and polyethylene oxide.
  • the perovskite material in the perovskite light-emitting layer is CH 3 NH 3 PbBr 3
  • the polymer material in the perovskite light-emitting layer is polyimide
  • the plurality of perovskite luminescent layers comprise a plurality of red perovskite luminescent layers, a plurality of green perovskite luminescent layers, and a plurality of blue perovskite luminescent layers, the illuminating wavelength of the red perovskite luminescent layer
  • the emission wavelength of the green perovskite light-emitting layer is from 500 nm to 560 nm
  • the emission wavelength of the blue perovskite light-emitting layer is from 420 nm to 480 nm.
  • the present invention also provides a perovskite light emitting diode comprising: a substrate substrate, a pixel defining layer disposed on the substrate substrate, and a plurality of openings disposed on the pixel defining layer, disposed on the substrate a plurality of anodes on the substrate and respectively located in the plurality of openings, and a plurality of hole transport layers respectively disposed in the plurality of openings and located on the plurality of anodes, respectively disposed in the plurality of openings and located a plurality of light-emitting layers on the plurality of hole transport layers, a plurality of electron transport layers respectively disposed in the plurality of openings and located on the plurality of light-emitting layers, and respectively disposed on the plurality of electron transport layers a plurality of cathodes on the layer;
  • the perovskite light-emitting layer comprises a perovskite material and a polymer material doped in the perovskite material.
  • the mass percentage of the polymer material is 10% to 90%; and the perovskite material in the perovskite light-emitting layer is quantum dot particles.
  • the perovskite material comprises one or more of an organometallic halide perovskite material and an inorganic perovskite material;
  • the organometallic halide perovskite material comprises CH 3 NH 3 PbBr 3 and CH 3 NH One or more of 3 PbI 3 ;
  • the inorganic perovskite material comprises CsPbBr 3 ;
  • the polymer material comprises one or more of a polyimide polymer and polyethylene oxide.
  • the perovskite material in the perovskite light-emitting layer is CH 3 NH 3 PbBr 3
  • the polymer material in the perovskite light-emitting layer is polyimide
  • the plurality of perovskite luminescent layers comprise a plurality of red perovskite luminescent layers, a plurality of green perovskite luminescent layers, and a plurality of blue perovskite luminescent layers, the illuminating wavelength of the red perovskite luminescent layer
  • the emission wavelength of the green perovskite light-emitting layer is from 500 nm to 560 nm
  • the emission wavelength of the blue perovskite light-emitting layer is from 420 nm to 480 nm.
  • the invention also provides a method for manufacturing a perovskite light emitting diode, comprising:
  • the backplane includes a base substrate, a pixel defining layer disposed on the base substrate, a plurality of openings disposed on the pixel defining layer, and being disposed on the base substrate and respectively a plurality of anodes located in a plurality of openings;
  • the perovskite light-emitting layer comprising a perovskite material and a polymer material doped in the perovskite material ;
  • the mass percentage of the polymer material is 10% to 90%; and the perovskite material in the perovskite light-emitting layer is quantum dot particles;
  • the perovskite material comprises one or more of an organometallic halide perovskite material and an inorganic perovskite material;
  • the organometallic halide perovskite material comprises CH 3 NH 3 PbBr 3 and CH One or more of 3 NH 3 PbI 3 ;
  • the inorganic perovskite material comprises CsPbBr 3 ;
  • the polymer material comprises one or more of polyimide and polyethylene oxide;
  • the plurality of perovskite luminescent layers comprise a plurality of red perovskite luminescent layers, a plurality of green perovskite luminescent layers, and a plurality of blue perovskite luminescent layers, the red perovskite luminescent layer
  • the emission wavelength is 630 nm to 690 nm
  • the emission wavelength of the green perovskite emission layer is 500 nm to 560 nm
  • the emission wavelength of the blue perovskite emission layer is 420 nm to 480 nm.
  • the invention has the beneficial effects that the perovskite light-emitting diode of the invention is prepared by doping a suitable polymer material into a perovskite material to prepare a perovskite light-emitting layer, and on the other hand, can enhance the film formation of the perovskite material. Sex, reduce the generation of pinholes in the perovskite luminescent layer, thereby enhancing the perovskite The luminescent performance of the LED; on the other hand, it can effectively adjust the physical properties of the perovskite luminescent layer inkjet printing ink to meet the inkjet printing process requirements and improve the inkjet printing effect of the perovskite luminescent layer.
  • the perovskite light-emitting diode of the invention is prepared by the above method, and the perovskite light-emitting layer has a good film-forming effect, and substantially no pinhole is generated, so the perovskite light-emitting diode has better light-emitting performance.
  • FIG. 1 is a flow chart of a method for fabricating a perovskite light emitting diode of the present invention
  • FIG. 2 is a schematic view showing a step S1 of a method for fabricating a perovskite light emitting diode of the present invention
  • FIG. 3 is a schematic view showing a step S2 of a method for fabricating a perovskite light emitting diode of the present invention
  • FIG. 4 is a schematic view showing a step S3 of the method for fabricating a perovskite light emitting diode of the present invention.
  • Figure 5 is a schematic view showing a step S4 of the method for fabricating a perovskite light-emitting diode of the present invention
  • FIG. 6 is a schematic view showing a step S5 of the method for fabricating a perovskite light-emitting diode of the present invention and a schematic structural view of the perovskite light-emitting diode of the present invention.
  • the present invention provides a method for fabricating a perovskite light emitting diode, comprising the following steps:
  • a backing plate 80 is provided.
  • the backing plate 80 includes a substrate substrate 10, a pixel defining layer 20 disposed on the substrate substrate 10, and a pixel defining layer 20 disposed on the pixel defining layer 20.
  • a plurality of openings 21 and a plurality of anodes 30 provided on the base substrate 10 and located in the plurality of openings 21, respectively.
  • the base substrate 10 is a TFT substrate.
  • the plurality of openings 21 respectively correspond to a plurality of pixel regions.
  • the material of the plurality of anodes 30 includes one or more of ITO (indium tin oxide) and FTO (fluorinated tin dioxide), and the plurality of anodes 30 are formed by magnetron sputtering.
  • the film thickness of the plurality of anodes 30 is between 20 nm and 200 nm.
  • the pixel defining layer 20 is an organic material.
  • Step S2 as shown in FIG. 3, a plurality of hole transport layers 40 are formed on the plurality of anodes 30 in the plurality of openings 21, respectively.
  • the hole transport layer 40 includes an organic small molecule hole transport material or a polymer hole transport material.
  • the organic small molecule hole transporting material is Spiro-MeOTAD (N 2 , N 2 , N 2 ' , N 2 ' , N 7 , N 7 , N 7 ' , N 7 ' -octakis (4-methoxyphenyl) -9,9'-spirobi[9H-fluoren e]-2,2',7,7'-tetramine), the molecular formula of the Spiro-MeOTAD is
  • the polymer hole transporting material is PEDOT:PSS (Polyphonic (3,4-ethylenedioxythiophene): poly(styrene-sulfonate).
  • the hole transport layer 40 is prepared by a wet film formation method.
  • the wet film formation method is Ink-jet Printing.
  • the film thickness of the hole transport layer 40 is between 1 nm and 100 nm.
  • Step S3 as shown in FIG. 4, a plurality of perovskite light-emitting layers 50 are formed on the plurality of hole transport layers 40 in the plurality of openings 21, and the perovskite light-emitting layer 50 comprises a perovskite material. And a polymer material doped in the perovskite material.
  • the mass percentage of the polymer material is 10% to 90%.
  • the perovskite material in the perovskite light-emitting layer 50 is a quantum dot particle, and has the advantages of narrow luminescence chromatogram and high color purity. Depending on the size, the quantum dot particles emit different colors.
  • the perovskite material comprises one or more of an organometallic halide perovskite material and an inorganic perovskite material.
  • the organic material comprises a metal halide perovskite CH 3 NH 3 PbBr 3 and CH 3 NH 3 PbI 3 of one or more;
  • the inorganic material comprises a perovskite CsPbBr 3.
  • the polymer material includes polyimide (PIP, Polyimide Polymer) and One or more of Polyethylene Oxide (PEO).
  • PIP polyimide
  • PEO Polyethylene Oxide
  • the perovskite material is a perovskite emitting layer 50 CH 3 NH 3 PbBr 3 polymer material (MAPbBr 3, lead-ammonium bromide), said perovskite emitting layer 50 It is polyimide (PIP, Polyimide Polymer).
  • the plurality of perovskite light-emitting layers 50 include a plurality of red perovskite light-emitting layers 51, a plurality of green perovskite light-emitting layers 52, and a plurality of blue perovskite light-emitting layers 53, the red calcium.
  • the illuminating wavelength of the illuminate layer 51 is 630 nm to 690 nm
  • the wavelength of the green perovskite layer 52 is 500 nm to 560 nm
  • the wavelength of the blue perovskite layer 53 is 420 nm to 480 nm.
  • the red, green, and blue light emitted by the red perovskite light-emitting layer 51, the green perovskite light-emitting layer 52, and the blue perovskite light-emitting layer 53 have narrower chromatograms and higher color purity, thereby enabling The color gamut and color saturation of the display of the perovskite light emitting diode to which the present invention is applied is improved.
  • the perovskite light-emitting layer 50 is prepared by a wet film formation method.
  • the wet film formation method is Ink-jet Printing.
  • the perovskite light-emitting layer 50 has a film thickness of between 1 nm and 200 nm.
  • the perovskite light-emitting layer 50 has a film thickness of between 10 nm and 200 nm.
  • the invention prepares the perovskite light-emitting layer 50 by doping the polymer material in the perovskite material, on the one hand, can improve the film forming property of the perovskite material, and reduce the generation of pinholes in the perovskite light-emitting layer 50, Further, the luminescent performance of the perovskite light-emitting diode is improved; on the other hand, the physical properties of the inkjet printing ink of the perovskite luminescent layer 50 can be effectively adjusted to meet the requirements of the inkjet printing process, and the spray of the perovskite luminescent layer 50 is improved. Ink print effect.
  • Step S4 as shown in FIG. 5, a plurality of electron transport layers 60 are formed on the plurality of perovskite light-emitting layers 50 in the plurality of openings 21, respectively.
  • the material of the electron transport layer 60 includes one or more of an organic electron transport material and a metal oxide.
  • the organic electron transporting material is 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBI, 1,3,5-Tris(1-phenyl-1H) -benzimidazol-2-yl)benzene);
  • the metal oxide is titanium oxide (TiO 2 ).
  • the electron transport layer 60 is prepared by a vapor deposition film formation method or a wet film formation method.
  • the hole transport layer 40 is prepared by an evaporation film formation method; when the material of the electron transport layer 60 is a metal oxide, the space is The hole transport layer 40 is prepared by a wet film formation method.
  • the electron transport layer 60 has a film thickness of between 1 nm and 100 nm.
  • the electron transport layer 60 has a film thickness of between 5 nm and 50 nm.
  • Step S5 as shown in FIG. 6, a plurality of electron transport layers in the plurality of openings 21, respectively A plurality of cathodes 70 are formed on 60.
  • the material of the cathode 70 is a commonly used low work function metal material.
  • the material of the cathode 70 includes lithium (Li), magnesium (Mg), calcium (Ca), strontium (Sr), lanthanum (La), cerium (Ce), cerium (Eu), ytterbium (Yb), One or more of aluminum (Al), bismuth (Cs), bismuth (Rb), and alloys of the above metals.
  • the cathode 70 is prepared by a vacuum evaporation method.
  • the cathode 70 has a film thickness of between 50 nm and 3000 nm.
  • the cathode 70 includes a first cathode film (not shown) disposed on the electron transport layer 60 and a second cathode film (not shown) disposed on the first cathode film,
  • the material of the first cathode film is calcium (Ca)
  • the thickness of the first cathode film is between 0.5 nm and 30 nm
  • the material of the second cathode film is aluminum (Al)
  • the thickness of the second cathode film Between 50 nm and 2000 nm, both the first cathode film and the second cathode film are prepared by vacuum evaporation.
  • the method for fabricating the perovskite light-emitting diode of the invention comprises preparing the perovskite light-emitting layer 50 by doping a suitable polymer material into the perovskite material, thereby improving the film forming property of the perovskite material and reducing the calcium and titanium.
  • the process requirements increase the inkjet printing effect of the perovskite luminescent layer 50.
  • the present invention further provides a perovskite light emitting diode, comprising: a base substrate 10 , a pixel defining layer 20 disposed on the base substrate 10 , a plurality of openings 21 disposed on the pixel defining layer 20, a plurality of anodes 30 disposed on the base substrate 10 and respectively located in the plurality of openings 21, respectively disposed in the plurality of openings 21 and located a plurality of hole transport layers 40 on the plurality of anodes 30, and a plurality of light-emitting layers 50 respectively disposed in the plurality of openings 21 and located on the plurality of hole transport layers 40 are respectively disposed in the a plurality of electron transport layers 60 in the plurality of openings 21 and located on the plurality of light emitting layers 50, and a plurality of cathodes 70 respectively disposed on the plurality of electron transport layers 60;
  • the perovskite light-emitting layer 50 comprises a perovskite material and a polymer material doped in the perovskite material.
  • the anode 30 injects holes into the hole transport layer 40, and the hole transport layer 40 helps holes to be transported from the anode 30 into the light emitting layer 50.
  • the cathode 70 injects electrons into the electron transport layer 60, which facilitates electron transport from the cathode 70 into the light emitting layer 50, and holes and electrons recombine in the light emitting layer 50.
  • the base substrate 10 is a TFT substrate.
  • the plurality of openings 21 respectively correspond to a plurality of pixel regions.
  • the material of the plurality of anodes 30 includes one or more of ITO (indium tin oxide) and FTO (fluorine-doped tin dioxide), and the film thickness of the plurality of anodes 30 is between 20 nm and 200 nm. .
  • the pixel defining layer 20 is an organic material.
  • the hole transport layer 40 includes an organic small molecule hole transport material or a polymer hole transport material.
  • the organic small molecule hole transporting material is Spiro-MeOTAD
  • the molecular formula of the Spiro-MeOTAD is Spiro-MeOTAD
  • the polymer hole transporting material is PEDOT:PSS.
  • the film thickness of the hole transport layer 40 is between 1 nm and 100 nm.
  • the mass percentage of the polymer material is 10% to 90%.
  • the perovskite material in the perovskite light-emitting layer 50 is a quantum dot particle, and has the advantages of narrow luminescence chromatogram and high color purity. Depending on the size, the quantum dot particles emit different colors.
  • the perovskite material comprises one or more of an organometallic halide perovskite material and an inorganic perovskite material.
  • the organic material comprises a metal halide perovskite CH 3 NH 3 PbBr 3 and CH 3 NH 3 PbI 3 of one or more;
  • the inorganic material comprises a perovskite CsPbBr 3.
  • the polymer material includes one or more of polyimide (PIP, Polyimide Polymer) and polyethylene oxide (PEO).
  • PIP polyimide
  • PEO polyethylene oxide
  • the perovskite material is a perovskite emitting layer 50 CH 3 NH 3 PbBr 3 polymer material (MAPbBr 3, lead-ammonium bromide), said perovskite emitting layer 50 It is polyimide (PIP, Polyimide Polymer).
  • the plurality of perovskite light-emitting layers 50 include a plurality of red perovskite light-emitting layers 51, a plurality of green perovskite light-emitting layers 52, and a plurality of blue perovskite light-emitting layers 53, the red calcium.
  • the illuminating wavelength of the illuminating layer 51 of the ilmenite is 630 nm to 690 nm, and the illuminating wave of the green perovskite luminescent layer 52
  • the length of the blue perovskite light-emitting layer 53 is from 420 nm to 480 nm.
  • the red, green, and blue light emitted by the red perovskite light-emitting layer 51, the green perovskite light-emitting layer 52, and the blue perovskite light-emitting layer 53 have narrower chromatograms and higher color purity, thereby enabling The color gamut and color saturation of the display of the perovskite light emitting diode to which the present invention is applied is improved.
  • the perovskite light-emitting layer 50 has a film thickness of between 1 nm and 200 nm.
  • the perovskite light-emitting layer 50 has a film thickness of between 10 nm and 200 nm.
  • the material of the electron transport layer 60 includes one or more of an organic electron transport material and a metal oxide.
  • the organic electron transporting material is 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBI, 1,3,5-Tris(1-phenyl-1H) -benzimidazol-2-yl)benzene);
  • the metal oxide is titanium oxide (TiO 2 ).
  • the electron transport layer 60 is prepared by a vapor deposition film formation method or a wet film formation method.
  • the hole transport layer 40 is prepared by an evaporation film formation method; when the material of the electron transport layer 60 is a metal oxide, the space is The hole transport layer 40 is prepared by a wet film formation method.
  • the electron transport layer 60 has a film thickness of between 1 nm and 100 nm.
  • the electron transport layer 60 has a film thickness of between 5 nm and 50 nm.
  • the material of the cathode 70 is a commonly used low work function metal material.
  • the material of the cathode 70 includes lithium (Li), magnesium (Mg), calcium (Ca), strontium (Sr), lanthanum (La), cerium (Ce), cerium (Eu), ytterbium (Yb), One or more of aluminum (Al), bismuth (Cs), bismuth (Rb), and alloys of the above metals.
  • the cathode 70 has a film thickness of between 50 nm and 3000 nm.
  • the cathode 70 includes a first cathode film (not shown) disposed on the electron transport layer 60 and a second cathode film (not shown) disposed on the first cathode film,
  • the material of the first cathode film is calcium (Ca)
  • the thickness of the first cathode film is between 0.5 nm and 30 nm
  • the material of the second cathode film is aluminum (Al)
  • the thickness of the second cathode film Between 50nm and 2000nm.
  • the perovskite light-emitting diode of the invention prepares the perovskite light-emitting layer 50 by doping a suitable polymer material into the perovskite material, and on the one hand, can improve the formation of the perovskite material without affecting the performance of the device.
  • Membrane property reducing the generation of pinholes in the perovskite light-emitting layer 50, thereby improving the luminescence performance of the perovskite light-emitting diode; on the other hand, effectively adjusting the physical properties of the inkjet printing ink of the perovskite light-emitting layer 50, It satisfies the process requirements of inkjet printing and enhances the inkjet printing effect of the perovskite luminescent layer 50.
  • the present invention provides a perovskite light emitting diode and a method of fabricating the same.
  • the preparation method of the perovskite light-emitting diode can prepare the perovskite light-emitting layer by doping the suitable polymer material in the perovskite material, and on the one hand, can improve the formation of the perovskite material without affecting the performance of the device.
  • the perovskite light-emitting diode of the invention is prepared by the above method, and the perovskite light-emitting layer has a good film-forming effect, and substantially no pinhole is generated, so the perovskite light-emitting diode has better light-emitting performance.

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Abstract

本发明提供一种钙钛矿发光二极管及其制作方法。本发明的钙钛矿发光二极管的制作方法通过在钙钛矿材料中掺杂合适的聚合物材料来制备钙钛矿发光层，一方面能够提升钙钛矿材料的成膜性，减少钙钛矿发光层中针孔的产生，进而提升钙钛矿发光二极管的发光表现；另一方面能够有效调节钙钛矿发光层喷墨打印墨水的物理性质，使其满足喷墨打印的制程需求，提升钙钛矿发光层的喷墨打印效果。本发明的钙钛矿发光二极管采用上述方法制备得到，其钙钛矿发光层具有较好的成膜效果，基本无针孔产生，因此钙钛矿发光二极管具有较好的发光表现。

Description

钙钛矿发光二极管及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种钙钛矿发光二极管及其制作方法。
背景技术
以ABX3为基本化学式的钙钛矿材料以最早发现于钙钛矿石中的钛酸钙(CaTiO3)化合物而得名。钙钛矿结构的特征是以B位阳离子为中心的X八面体共顶连接，并嵌在以A位离子为顶点的四方体中。A、B位阳离子既可由单一离子也可由多种离子占据，根据A、B位阳离子的种类及其离子半径的不同，可以构筑出微结构特征各异、物理性能千变万化的钙钛矿材料。
钙钛矿材料是一种可溶液加工的半导体材料，具有低成本、载流子迁移率高、光吸收系数大等特点，近几年来在太阳能电池领域有非常优异的表现。与此同时，钙钛矿材料具有出波长可调、发射光谱窄等发光特性，在电致发光以及显示等领域中也有巨大的潜力。
目前制作钙钛矿薄膜的方法包括溅射、蒸镀、丝印、旋涂、刮涂、涂覆和喷墨打印等方法，其中溅射和蒸镀成本高，丝印厚度和精度不好控制，旋涂不适于大规模生产，涂覆和喷墨打印可适用于低成本、连续、大面积的规模化工业生产中。与涂覆相比，喷墨打印的厚度和位置控制精确，具有微米级分辨率，可实现全数字图形输出，可通过计算机对加工过程灵活高精度控制。钙钛矿可分散于溶剂中配制成墨水，利用喷墨打印技术可以精确地按所需量将量子点材料沉积在设定的位置，沉积形成精密像素薄膜，有利于钙钛矿发光二极管器件的制造，降低成本。
但是现有的钙钛矿材料通常情况下成膜性较差，成膜过程中形成的针孔(pinhole)很容易使得制备的钙钛矿发光二极管器件漏电流偏高，电流效率降低。
发明内容
本发明的目的在于提供一种钙钛矿发光二极管的制作方法，能够提升钙钛矿材料的成膜性，减少钙钛矿发光层中针孔的产生，进而提升钙钛矿发光二极管的发光表现。
本发明的目的还在于提供一种钙钛矿发光二极管，其钙钛矿发光层具有较好的成膜效果，基本无针孔产生，因此钙钛矿发光二极管具有较好的发光表现。
为实现上述目的，本发明提供一种钙钛矿发光二极管的制作方法，包括：
提供背板，所述背板包括衬底基板、设于所述衬底基板上的像素界定层、设于所述像素界定层上的数个开口、以及设于所述衬底基板上且分别位于数个开口内的数个阳极；
分别在所述数个开口内的数个阳极上形成数个空穴传输层；
分别在所述数个开口内的数个空穴传输层上形成数个钙钛矿发光层，所述钙钛矿发光层包括钙钛矿材料及掺杂在钙钛矿材料中的聚合物材料；
分别在所述数个开口内的数个钙钛矿发光层上形成数个电子传输层；
分别在所述数个开口内的数个电子传输层上形成数个阴极。
所述钙钛矿发光层中，所述聚合物材料的质量百分比为10％～90％；所述钙钛矿发光层中的钙钛矿材料为量子点颗粒。
所述钙钛矿材料包括有机金属卤化物钙钛矿材料与无机钙钛矿材料中的一种或多种；所述有机金属卤化物钙钛矿材料包括CH3NH3PbBr3与CH3NH3PbI3中的一种或多种；所述无机钙钛矿材料包括CsPbBr3；所述聚合物材料包括聚酰亚胺聚合物与聚氧化乙烯中的一种或多种。
所述钙钛矿发光层中的钙钛矿材料为CH3NH3PbBr3，所述钙钛矿发光层中的聚合物材料为聚酰亚胺。
所述数个钙钛矿发光层包括数个红色钙钛矿发光层、数个绿色钙钛矿发光层、及数个蓝色钙钛矿发光层，所述红色钙钛矿发光层的发光波长为630nm-690nm，所述绿色钙钛矿发光层的发光波长为500nm-560nm，所述蓝色钙钛矿发光层的发光波长为420nm-480nm。
本发明还提供一种钙钛矿发光二极管，包括：衬底基板、设于所述衬底基板上的像素界定层、设于所述像素界定层上的数个开口、设于所述衬底基板上且分别位于数个开口内的数个阳极、分别设于所述数个开口内且位于所述数个阳极上的数个空穴传输层、分别设于所述数个开口内且位于所述数个空穴传输层上的数个发光层、分别设于所述数个开口内且位于所述数个发光层上的数个电子传输层、以及分别设于所述数个电子传输层上的数个阴极；
其中，所述钙钛矿发光层包括钙钛矿材料及掺杂在钙钛矿材料中的聚合物材料。
所述钙钛矿发光层中，所述聚合物材料的质量百分比为10％～90％；所述钙钛矿发光层中的钙钛矿材料为量子点颗粒。
所述钙钛矿材料包括有机金属卤化物钙钛矿材料与无机钙钛矿材料中的一种或多种；所述有机金属卤化物钙钛矿材料包括CH3NH3PbBr3与CH3NH3PbI3中的一种或多种；所述无机钙钛矿材料包括CsPbBr3；所述聚合物材料包括聚酰亚胺聚合物与聚氧化乙烯中的一种或多种。
所述钙钛矿发光层中的钙钛矿材料为CH3NH3PbBr3，所述钙钛矿发光层中的聚合物材料为聚酰亚胺。
所述数个钙钛矿发光层包括数个红色钙钛矿发光层、数个绿色钙钛矿发光层、及数个蓝色钙钛矿发光层，所述红色钙钛矿发光层的发光波长为630nm-690nm，所述绿色钙钛矿发光层的发光波长为500nm-560nm，所述蓝色钙钛矿发光层的发光波长为420nm-480nm。
本发明还提供一种钙钛矿发光二极管的制作方法，包括：
提供背板，所述背板包括衬底基板、设于所述衬底基板上的像素界定层、设于所述像素界定层上的数个开口、以及设于所述衬底基板上且分别位于数个开口内的数个阳极；
分别在所述数个开口内的数个阳极上形成数个空穴传输层；
分别在所述数个开口内的数个空穴传输层上形成数个钙钛矿发光层，所述钙钛矿发光层包括钙钛矿材料及掺杂在钙钛矿材料中的聚合物材料；
分别在所述数个开口内的数个钙钛矿发光层上形成数个电子传输层；
分别在所述数个开口内的数个电子传输层上形成数个阴极；
其中，所述钙钛矿发光层中，所述聚合物材料的质量百分比为10％～90％；所述钙钛矿发光层中的钙钛矿材料为量子点颗粒；
其中，所述钙钛矿材料包括有机金属卤化物钙钛矿材料与无机钙钛矿材料中的一种或多种；所述有机金属卤化物钙钛矿材料包括CH3NH3PbBr3与CH3NH3PbI3中的一种或多种；所述无机钙钛矿材料包括CsPbBr3；所述聚合物材料包括聚酰亚胺与聚氧化乙烯中的一种或多种；
其中，所述数个钙钛矿发光层包括数个红色钙钛矿发光层、数个绿色钙钛矿发光层、及数个蓝色钙钛矿发光层，所述红色钙钛矿发光层的发光波长为630nm-690nm，所述绿色钙钛矿发光层的发光波长为500nm-560nm，所述蓝色钙钛矿发光层的发光波长为420nm-480nm。
本发明的有益效果：本发明的钙钛矿发光二极管的制作方法通过在钙钛矿材料中掺杂合适的聚合物材料来制备钙钛矿发光层，一方面能够提升钙钛矿材料的成膜性，减少钙钛矿发光层中针孔的产生，进而提升钙钛矿 发光二极管的发光表现；另一方面能够有效调节钙钛矿发光层喷墨打印墨水的物理性质，使其满足喷墨打印的制程需求，提升钙钛矿发光层的喷墨打印效果。本发明的钙钛矿发光二极管采用上述方法制备得到，其钙钛矿发光层具有较好的成膜效果，基本无针孔产生，因此钙钛矿发光二极管具有较好的发光表现。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的钙钛矿发光二极管的制作方法的流程图；
图2为本发明的钙钛矿发光二极管的制作方法的步骤S1的示意图；
图3为本发明的钙钛矿发光二极管的制作方法的步骤S2的示意图；
图4为本发明的钙钛矿发光二极管的制作方法的步骤S3的示意图；
图5为本发明的钙钛矿发光二极管的制作方法的步骤S4的示意图；
图6为本发明的钙钛矿发光二极管的制作方法的步骤S5的示意图及本发明的钙钛矿发光二极管的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种钙钛矿发光二极管的制作方法，包括如下步骤：
步骤S1、如图2所示，提供背板80，所述背板80包括衬底基板10、设于所述衬底基板10上的像素界定层20、设于所述像素界定层20上的数个开口21、以及设于所述衬底基板10上且分别位于数个开口21内的数个阳极30。
具体的，所述衬底基板10为TFT基板。
具体的，所述数个开口21分别对应数个像素区域。
具体的，所述数个阳极30的材料包括ITO(氧化铟锡)与FTO(掺氟二氧化锡)中的一种或多种，所述数个阳极30采用磁控溅射成膜的方式制 备，所述数个阳极30的膜厚在20nm到200nm之间。
具体的，所述像素界定层20为有机材料。
步骤S2、如图3所示，分别在所述数个开口21内的数个阳极30上形成数个空穴传输层40。
具体的，所述空穴传输层40包括有机小分子空穴传输材料或者聚合物空穴传输材料。
优选的，所述有机小分子空穴传输材料为Spiro-MeOTAD(N2,N2,N2′,N2′,N7,N7,N7′,N7′-octakis(4-methoxyphenyl)-9,9′-spirobi[9H-fluoren e]-2,2′,7,7′-tetramine)，所述Spiro-MeOTAD的分子式为
Figure PCTCN2017113055-appb-000001
优选的，所述聚合物空穴传输材料为PEDOT:PSS(Polyphonic(3,4-ethylenedioxythiophene):poly(styrene-sulfonate))。
具体的，所述空穴传输层40采用湿法成膜法制备。优选的，所述湿法成膜法为喷墨打印法(Ink-jet Printing)。
具体的，所述空穴传输层40的膜厚在1nm到100nm之间。
步骤S3、如图4所示，分别在所述数个开口21内的数个空穴传输层40上形成数个钙钛矿发光层50，所述钙钛矿发光层50包括钙钛矿材料及掺杂在钙钛矿材料中的聚合物材料。
具体的，所述钙钛矿发光层50中，所述聚合物材料的质量百分比为10％～90％。
具体的，所述钙钛矿发光层50中的钙钛矿材料为量子点颗粒，具有发光色谱窄及色纯度高的优点。根据尺寸的不同，量子点颗粒发光的颜色也不同。
具体的，所述钙钛矿材料包括有机金属卤化物钙钛矿材料与无机钙钛矿材料中的一种或多种。优选的，所述有机金属卤化物钙钛矿材料包括CH3NH3PbBr3与CH3NH3PbI3中的一种或多种；所述无机钙钛矿材料包括CsPbBr3。
具体的，所述聚合物材料包括聚酰亚胺(PIP，Polyimide Polymer)与 聚氧化乙烯(Polyethylene Oxide，PEO)中的一种或多种。
最优选的，所述钙钛矿发光层50中的钙钛矿材料为CH3NH3PbBr3(MAPbBr3，甲基铵溴化铅)，所述钙钛矿发光层50中的聚合物材料为聚酰亚胺(PIP，Polyimide Polymer)。
具体的，所述数个钙钛矿发光层50包括数个红色钙钛矿发光层51、数个绿色钙钛矿发光层52、及数个蓝色钙钛矿发光层53，所述红色钙钛矿发光层51的发光波长为630nm-690nm，所述绿色钙钛矿发光层52的发光波长为500nm-560nm，所述蓝色钙钛矿发光层53的发光波长为420nm-480nm。由此可见，所述红色钙钛矿发光层51、绿色钙钛矿发光层52、及蓝色钙钛矿发光层53发出的红、绿、蓝光的色谱较窄，色纯度较高，因此能够提高应用本发明的钙钛矿发光二极管的显示器的色域和色饱和度。
具体的，所述钙钛矿发光层50采用湿法成膜法制备。优选的，所述湿法成膜法为喷墨打印法(Ink-jet Printing)。
具体的，所述钙钛矿发光层50的膜厚在1nm到200nm之间。优选的，所述钙钛矿发光层50的膜厚在10nm到200nm之间。
本发明在钙钛矿材料中掺杂聚合物材料制备钙钛矿发光层50，一方面能够提升钙钛矿材料的成膜性，减少钙钛矿发光层50中针孔(pinhole)的产生，进而提升钙钛矿发光二极管的发光表现；另一方面能够有效调节钙钛矿发光层50喷墨打印墨水的物理性质，使其满足喷墨打印的制程需求，提升钙钛矿发光层50的喷墨打印效果。
步骤S4、如图5所示，分别在所述数个开口21内的数个钙钛矿发光层50上形成数个电子传输层60。
具体的，所述电子传输层60的材料包括有机电子传输材料与金属氧化物中的一种或多种。
优选的，所述有机电子传输材料为1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯(TPBI，1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene)；所述金属氧化物为氧化钛(TiO2)。
具体的，所述电子传输层60采用蒸镀成膜法或者湿法成膜法制备。
具体的，所述电子传输层60的材料为有机电子传输材料时，所述空穴传输层40采用蒸镀成膜法制备；所述电子传输层60的材料为金属氧化物时，所述空穴传输层40采用湿法成膜法制备。
具体的，所述电子传输层60的膜厚在1nm到100nm之间。优选的，所述电子传输层60的膜厚在5nm到50nm之间。
步骤S5、如图6所示，分别在所述数个开口21内的数个电子传输层 60上形成数个阴极70。
具体的，所述阴极70的材料为常用低功函金属材料。优选的，所述阴极70的材料包括锂(Li)、镁(Mg)、钙(Ca)、锶(Sr)、镧(La)、铈(Ce)、铕(Eu)、镱(Yb)、铝(Al)、铯(Cs)、铷(Rb)、及以上金属的合金中的一种或多种。
具体的，所述阴极70采用真空蒸镀法制备。
具体的，所述阴极70的膜厚在50nm到3000nm之间。
优选的，所述阴极70包括设于所述电子传输层60上的第一阴极薄膜(未图示)与设于所述第一阴极薄膜上的第二阴极薄膜(未图示)，所述第一阴极薄膜的材料为钙(Ca)，所述第一阴极薄膜的厚度在0.5nm到30nm之间，所述第二阴极薄膜的材料为铝(Al)，所述第二阴极薄膜的厚度在50nm到2000nm之间，所述第一阴极薄膜与第二阴极薄膜均采用真空蒸镀法制备。
本发明的钙钛矿发光二极管的制作方法通过在钙钛矿材料中掺杂合适的聚合物材料来制备钙钛矿发光层50，一方面能够提升钙钛矿材料的成膜性，减少钙钛矿发光层50中针孔(pinhole)的产生，进而提升钙钛矿发光二极管的发光表现；另一方面能够有效调节钙钛矿发光层50喷墨打印墨水的物理性质，使其满足喷墨打印的制程需求，提升钙钛矿发光层50的喷墨打印效果。
请参阅图6，基于上述钙钛矿发光二极管的制作方法，本发明还提供一种钙钛矿发光二极管，包括：衬底基板10、设于所述衬底基板10上的像素界定层20、设于所述像素界定层20上的数个开口21、设于所述衬底基板10上且分别位于数个开口21内的数个阳极30、分别设于所述数个开口21内且位于所述数个阳极30上的数个空穴传输层40、分别设于所述数个开口21内且位于所述数个空穴传输层40上的数个发光层50、分别设于所述数个开口21内且位于所述数个发光层50上的数个电子传输层60、以及分别设于所述数个电子传输层60上的数个阴极70；
其中，所述钙钛矿发光层50包括钙钛矿材料及掺杂在钙钛矿材料中的聚合物材料。
具体的，所述钙钛矿发光二极管工作时，所述阳极30将空穴注入空穴传输层40中，所述空穴传输层40帮助空穴从阳极30传输到发光层50中，所述阴极70将电子注入到电子传输层60中，所述电子传输层60帮助电子从阴极70传输到发光层50中，空穴和电子在发光层50中复合发光。
具体的，所述衬底基板10为TFT基板。
具体的，所述数个开口21分别对应数个像素区域。
具体的，所述数个阳极30的材料包括ITO(氧化铟锡)与FTO(掺氟二氧化锡)中的一种或多种，所述数个阳极30的膜厚在20nm到200nm之间。
具体的，所述像素界定层20为有机材料。
具体的，所述空穴传输层40包括有机小分子空穴传输材料或者聚合物空穴传输材料。
优选的，所述有机小分子空穴传输材料为Spiro-MeOTAD，所述Spiro-MeOTAD的分子式为
Figure PCTCN2017113055-appb-000002
优选的，所述聚合物空穴传输材料为PEDOT:PSS。
具体的，所述空穴传输层40的膜厚在1nm到100nm之间。
具体的，所述钙钛矿发光层50中，所述聚合物材料的质量百分比为10％～90％。
具体的，所述钙钛矿发光层50中的钙钛矿材料为量子点颗粒，具有发光色谱窄，色纯度高的优点。根据尺寸的不同，量子点颗粒发光的颜色也不同。
具体的，所述钙钛矿材料包括有机金属卤化物钙钛矿材料与无机钙钛矿材料中的一种或多种。优选的，所述有机金属卤化物钙钛矿材料包括CH3NH3PbBr3与CH3NH3PbI3中的一种或多种；所述无机钙钛矿材料包括CsPbBr3。
具体的，所述聚合物材料包括聚酰亚胺(PIP，Polyimide Polymer)与聚氧化乙烯(Polyethylene oxide，PEO)中的一种或多种。
最优选的，所述钙钛矿发光层50中的钙钛矿材料为CH3NH3PbBr3(MAPbBr3，甲基铵溴化铅)，所述钙钛矿发光层50中的聚合物材料为聚酰亚胺(PIP，Polyimide Polymer)。
具体的，所述数个钙钛矿发光层50包括数个红色钙钛矿发光层51、数个绿色钙钛矿发光层52、及数个蓝色钙钛矿发光层53，所述红色钙钛矿发光层51的发光波长为630nm-690nm，所述绿色钙钛矿发光层52的发光波 长为500nm-560nm，所述蓝色钙钛矿发光层53的发光波长为420nm-480nm。由此可见，所述红色钙钛矿发光层51、绿色钙钛矿发光层52、及蓝色钙钛矿发光层53发出的红、绿、蓝光的色谱较窄，色纯度较高，因此能够提高应用本发明的钙钛矿发光二极管的显示器的色域和色饱和度。
具体的，所述钙钛矿发光层50的膜厚在1nm到200nm之间。优选的，所述钙钛矿发光层50的膜厚在10nm到200nm之间。
具体的，所述电子传输层60的材料包括有机电子传输材料与金属氧化物中的一种或多种。
优选的，所述有机电子传输材料为1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯(TPBI，1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene)；所述金属氧化物为氧化钛(TiO2)。
具体的，所述电子传输层60采用蒸镀成膜法或者湿法成膜法制备。
具体的，所述电子传输层60的材料为有机电子传输材料时，所述空穴传输层40采用蒸镀成膜法制备；所述电子传输层60的材料为金属氧化物时，所述空穴传输层40采用湿法成膜法制备。
具体的，所述电子传输层60的膜厚在1nm到100nm之间。优选的，所述电子传输层60的膜厚在5nm到50nm之间。
具体的，所述阴极70的材料为常用低功函金属材料。优选的，所述阴极70的材料包括锂(Li)、镁(Mg)、钙(Ca)、锶(Sr)、镧(La)、铈(Ce)、铕(Eu)、镱(Yb)、铝(Al)、铯(Cs)、铷(Rb)、及以上金属的合金中的一种或多种。
具体的，所述阴极70的膜厚在50nm到3000nm之间。
优选的，所述阴极70包括设于所述电子传输层60上的第一阴极薄膜(未图示)与设于所述第一阴极薄膜上的第二阴极薄膜(未图示)，所述第一阴极薄膜的材料为钙(Ca)，所述第一阴极薄膜的厚度在0.5nm到30nm之间，所述第二阴极薄膜的材料为铝(Al)，所述第二阴极薄膜的厚度在50nm到2000nm之间。
本发明的钙钛矿发光二极管通过在钙钛矿材料中掺杂合适的聚合物材料来制备钙钛矿发光层50，一方面在不影响器件性能的前提下，能够提升钙钛矿材料的成膜性，减少钙钛矿发光层50中针孔(pinhole)的产生，进而提升钙钛矿发光二极管的发光表现；另一方面能够有效调节钙钛矿发光层50喷墨打印墨水的物理性质，使其满足喷墨打印的制程需求，提升钙钛矿发光层50的喷墨打印效果。
综上所述，本发明提供一种钙钛矿发光二极管及其制作方法。本发明 的钙钛矿发光二极管的制作方法通过在钙钛矿材料中掺杂合适的聚合物材料来制备钙钛矿发光层，一方面在不影响器件性能的前提下，能够提升钙钛矿材料的成膜性，减少钙钛矿发光层中针孔的产生，进而提升钙钛矿发光二极管的发光表现；另一方面能够有效调节钙钛矿发光层喷墨打印墨水的物理性质，使其满足喷墨打印的制程需求，提升钙钛矿发光层的喷墨打印效果。本发明的钙钛矿发光二极管采用上述方法制备得到，其钙钛矿发光层具有较好的成膜效果，基本无针孔产生，因此钙钛矿发光二极管具有较好的发光表现。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (12)

  1. 一种钙钛矿发光二极管的制作方法，包括：
    提供背板，所述背板包括衬底基板、设于所述衬底基板上的像素界定层、设于所述像素界定层上的数个开口、以及设于所述衬底基板上且分别位于数个开口内的数个阳极；
    分别在所述数个开口内的数个阳极上形成数个空穴传输层；
    分别在所述数个开口内的数个空穴传输层上形成数个钙钛矿发光层，所述钙钛矿发光层包括钙钛矿材料及掺杂在钙钛矿材料中的聚合物材料；
    分别在所述数个开口内的数个钙钛矿发光层上形成数个电子传输层；
    分别在所述数个开口内的数个电子传输层上形成数个阴极。
  2. 如权利要求1所述的钙钛矿发光二极管的制作方法，其中，所述钙钛矿发光层中，所述聚合物材料的质量百分比为10％～90％；所述钙钛矿发光层中的钙钛矿材料为量子点颗粒。
  3. 如权利要求1所述的钙钛矿发光二极管的制作方法，其中，所述钙钛矿材料包括有机金属卤化物钙钛矿材料与无机钙钛矿材料中的一种或多种；所述有机金属卤化物钙钛矿材料包括CH3NH3PbBr3与CH3NH3PbI3中的一种或多种；所述无机钙钛矿材料包括CsPbBr3；所述聚合物材料包括聚酰亚胺与聚氧化乙烯中的一种或多种。
  4. 如权利要求3所述的钙钛矿发光二极管的制作方法，其中，所述钙钛矿发光层中的钙钛矿材料为CH3NH3PbBr3，所述钙钛矿发光层中的聚合物材料为聚酰亚胺。
  5. 如权利要求1所述的钙钛矿发光二极管的制作方法，其中，所述数个钙钛矿发光层包括数个红色钙钛矿发光层、数个绿色钙钛矿发光层、及数个蓝色钙钛矿发光层，所述红色钙钛矿发光层的发光波长为630nm-690nm，所述绿色钙钛矿发光层的发光波长为500nm-560nm，所述蓝色钙钛矿发光层的发光波长为420nm-480nm。
  6. 一种钙钛矿发光二极管，包括：衬底基板、设于所述衬底基板上的像素界定层、设于所述像素界定层上的数个开口、设于所述衬底基板上且分别位于数个开口内的数个阳极、分别设于所述数个开口内且位于所述数个阳极上的数个空穴传输层、分别设于所述数个开口内且位于所述数个空穴传输层上的数个发光层、分别设于所述数个开口内且位于所述数个发光层上的数个电子传输层、以及分别设于所述数个电子传输层上的数个阴极；
    其中，所述钙钛矿发光层包括钙钛矿材料及掺杂在钙钛矿材料中的聚合物材料。
  7. 如权利要求6所述的钙钛矿发光二极管，其中，所述钙钛矿发光层中，所述聚合物材料的质量百分比为10％～90％；所述钙钛矿发光层中的钙钛矿材料为量子点颗粒。
  8. 如权利要求6所述的钙钛矿发光二极管，其中，所述钙钛矿材料包括有机金属卤化物钙钛矿材料与无机钙钛矿材料中的一种或多种；所述有机金属卤化物钙钛矿材料包括CH3NH3PbBr3与CH3NH3PbI3中的一种或多种；所述无机钙钛矿材料包括CsPbBr3；所述聚合物材料包括聚酰亚胺与聚氧化乙烯中的一种或多种。
  9. 如权利要求8所述的钙钛矿发光二极管，其中，所述钙钛矿发光层中的钙钛矿材料为CH3NH3PbBr3，所述钙钛矿发光层中的聚合物材料为聚酰亚胺。
  10. 如权利要求6所述的钙钛矿发光二极管，其中，所述数个钙钛矿发光层包括数个红色钙钛矿发光层、数个绿色钙钛矿发光层、及数个蓝色钙钛矿发光层，所述红色钙钛矿发光层的发光波长为630nm-690nm，所述绿色钙钛矿发光层的发光波长为500nm-560nm，所述蓝色钙钛矿发光层的发光波长为420nm-480nm。
  11. 一种钙钛矿发光二极管的制作方法，包括：
    提供背板，所述背板包括衬底基板、设于所述衬底基板上的像素界定层、设于所述像素界定层上的数个开口、以及设于所述衬底基板上且分别位于数个开口内的数个阳极；
    分别在所述数个开口内的数个阳极上形成数个空穴传输层；
    分别在所述数个开口内的数个空穴传输层上形成数个钙钛矿发光层，所述钙钛矿发光层包括钙钛矿材料及掺杂在钙钛矿材料中的聚合物材料；
    分别在所述数个开口内的数个钙钛矿发光层上形成数个电子传输层；
    分别在所述数个开口内的数个电子传输层上形成数个阴极；
    其中，所述钙钛矿发光层中，所述聚合物材料的质量百分比为10％～90％；所述钙钛矿发光层中的钙钛矿材料为量子点颗粒；
    其中，所述钙钛矿材料包括有机金属卤化物钙钛矿材料与无机钙钛矿材料中的一种或多种；所述有机金属卤化物钙钛矿材料包括CH3NH3PbBr3与CH3NH3PbI3中的一种或多种；所述无机钙钛矿材料包括CsPbBr3；所述聚合物材料包括聚酰亚胺与聚氧化乙烯中的一种或多种；
    其中，所述数个钙钛矿发光层包括数个红色钙钛矿发光层、数个绿色 钙钛矿发光层、及数个蓝色钙钛矿发光层，所述红色钙钛矿发光层的发光波长为630nm-690nm，所述绿色钙钛矿发光层的发光波长为500nm-560nm，所述蓝色钙钛矿发光层的发光波长为420nm-480nm。
  12. 如权利要求11所述的钙钛矿发光二极管的制作方法，其中，所述钙钛矿发光层中的钙钛矿材料为CH3NH3PbBr3，所述钙钛矿发光层中的聚合物材料为聚酰亚胺。
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