WO2019056632A1 - Dispositif de traitement de tranche, réservoir de solution associé et procédé d'évacuation pour réservoir de solution - Google Patents

Dispositif de traitement de tranche, réservoir de solution associé et procédé d'évacuation pour réservoir de solution Download PDF

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Publication number
WO2019056632A1
WO2019056632A1 PCT/CN2017/117916 CN2017117916W WO2019056632A1 WO 2019056632 A1 WO2019056632 A1 WO 2019056632A1 CN 2017117916 W CN2017117916 W CN 2017117916W WO 2019056632 A1 WO2019056632 A1 WO 2019056632A1
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WO
WIPO (PCT)
Prior art keywords
tank
liquid
silicon wafer
processing apparatus
height
Prior art date
Application number
PCT/CN2017/117916
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English (en)
Chinese (zh)
Inventor
左国军
成旭
Original Assignee
常州捷佳创精密机械有限公司
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Application filed by 常州捷佳创精密机械有限公司 filed Critical 常州捷佳创精密机械有限公司
Publication of WO2019056632A1 publication Critical patent/WO2019056632A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Definitions

  • the invention relates to a safe discharge method for maintaining liquid volume, temperature and concentration in a liquid medicine tank, and a structure of a specific liquid medicine tank involved, a silicon wafer cleaning device or a wet processing device using the liquid medicine tank.
  • the process of the chemical liquid reaction cycle is to pump the liquid in the liquid solution tank 004 to the reaction tank 002 through the pump 005, and return to the auxiliary tank through the overflow pipe 003 on both sides of the reaction tank.
  • the circulation is carried out, and the liquid medicine is continuously consumed during the reaction with the silicon wafer, resulting in a decrease in the concentration of the mixed solution liquid solution, affecting the temperature of the tank liquid and the quality of the silicon wafer, and thus, when the equipment is in normal operation.
  • the intermittent dosing solution is used to maintain the concentration of the mixed solution tank through the refill tank 001.
  • the intermittent dosing solution causes the volume of the liquid in the mixed tank to continuously increase, in the event of equipment failure (for example, the pump suddenly stops working). The equipment suddenly powers off, etc.) The liquid in the reaction tank will flow back directly to the mixing tank, causing the liquid to overflow untimely. The liquid directly leaks directly from the service port and the unsealed portion of the tank to the outside of the tank. If the pressure is high, It will cause damage to the tank and cause serious safety hazards.
  • the traditional equipment controls the liquid discharge valve 006 on the bottom of the liquid tank through software, and manually discharges in the industrial computer to reduce the volume in the tank.
  • the discharge method has disadvantages: 1) It is difficult to find a reasonable discharge time point. Generally rely on the experience of the craftsman; 2) the need for personnel operation and recording is not automatic enough, and it is easy to make mistakes. If the liquid discharge is not timely, it will cause safety hazard in the event of equipment failure; 3) the specific gravity of the liquid after the reaction of the equipment is higher than the proportion of the new tonic solution Small, bottom drainage will cause some new drug solution to drain waste liquid and affect the concentration and temperature in the mixture tank; 4) The general diameter of the drain valve is large and its pressure is high. Waste of liquid and affect the process.
  • the object of the present invention is to provide a liquid medicine tank for a silicon wafer processing apparatus, which comprises a tank body, an overflow pipe connecting the overflow ports on the side wall of the tank body, and is connected to the tank. a first draining pipe of the liquid discharge port at the bottom of the body, a drain valve disposed on the first drain pipe, and a second drain pipe disposed at a position of the tank body at a first height from the bottom of the tank, the second row The portion of the liquid conduit outside the tank is connected to the first drain conduit through a control valve.
  • the first height is a height corresponding to a volume of liquid remaining in the drug solution tank when the silicon wafer processing apparatus operates normally.
  • the first height satisfies the condition that the first height minus the volume of the liquid remaining in the liquid tank when the device is in normal operation is less than the height of the overflow port minus the initial liquid dispensing time of the liquid tank. The height corresponding to the volume of the liquid.
  • the inlet of the second drain conduit is connected to the sidewall of the tank.
  • the second drain conduit extends from the bottom of the tank to the first height.
  • the second drain conduit extends from the top of the tank to the first height and the drain conduit is connected to a row of hydraulic power units.
  • the present invention also proposes a silicon wafer processing apparatus using the above chemical liquid tank.
  • the silicon wafer processing apparatus is a cleaning apparatus or a wet processing apparatus or the like.
  • the invention also proposes a method for maintaining the concentration, temperature and volume of the liquid in the liquid medicine tank, which is opened after the liquid solution tank is finished to process the silicon wafer, or after the silicon wafer is processed, each interval
  • the control valve is opened for a period of time.
  • the invention has the advantages that: first, since the specific gravity of the liquid after the reaction is smaller than the specific gravity of the new tonic solution, the liquid after the reaction is deposited on the upper part of the liquid, and the liquid medicine after the reaction is discharged. The usage period of the supplementary chemical solution is greatly increased; secondly, the discharge mode can ensure that the volume in the liquid medicine tank is constant, and the amount of the liquid replacement can be kept constant, thereby maintaining the concentration of the liquid medicine tank and the temperature thereof; Third, this emission control method can prevent the safety of hidden liquid from flowing back to the mixed liquid tank in the event of any failure in equipment production. Fourth, it can be fully automated without artificially controlling the amount of rehydration to maintain the concentration of the liquid tank. , volume and temperature; fifth, can reduce the number of discharges of the pump to extend the life of the valve.
  • Figure 1 shows a schematic view of the structure of the prior art.
  • Figure 2 shows a schematic view of the structure of the present invention.
  • the liquid medicine tank 004 includes a tank body, and the side wall of the tank body is provided with overflow.
  • the flow port, the overflow port is connected to the overflow pipe 003, the height of the overflow port from the bottom of the tank body is H4, the bottom of the tank body is provided with a liquid discharge port, the first liquid discharge pipe is connected with the liquid discharge port, and the first liquid discharge pipe is arranged
  • a drain valve 006 is provided, and then the present invention provides a second drain conduit at a position in the tank body at a first height from the bottom of the tank (point A), and a portion of the second drain conduit outside the tank is connected to the outside through the control valve 007 to
  • the first drain conduit, the present invention does not limit the number of second drain conduits, and can be adjusted as needed by those skilled in the art.
  • the height of the solution corresponding to the volume of VH1 in the initial dosing of the drug solution tank is H1
  • the height corresponding to the volume of liquid remaining in the solution tank when the device is in normal operation is H2
  • the position of A (the position of the first height) It can be at the height H2 corresponding to the volume of the remaining liquid in the liquid tank when the silicon wafer processing apparatus is working normally, or at the height H3 above it, and the optimum height H3 satisfies the condition H3 ⁇ H4- H1.
  • Figure 2 shows a specific mounting position of the second drain conduit, the inlet of the second drain conduit being connected to the sidewall of the tank.
  • the second drain conduit may also extend from the bottom of the tank until the first level is reached.
  • the second drain conduit extends from the top of the tank to the first height, and the drain conduit is connected to a row of hydraulic power units.
  • a silicon wafer processing apparatus using the above chemical liquid tank for example, a cleaning apparatus or a wet processing apparatus, etc., is within the scope of the present invention.
  • the invention adopts the structure of the above chemical liquid tank to maintain the concentration, temperature and volume discharge method of the liquid in the liquid medicine tank, and the chemical liquid tank can be arranged on the industrial control machine to open the control valve after the liquid preparation starts processing the silicon wafer. Or open the control valve at regular intervals for a period of time, such as how long it takes to run (how many products are made) how many seconds to open.

Abstract

L'invention concerne un dispositif de traitement de tranche, un réservoir de solution associé, et un procédé d'évacuation pour un réservoir de solution; le réservoir de solution (004) comprend un corps, un tuyau de trop-plein (003) qui est en communication avec un orifice de trop-plein sur une paroi latérale du corps de réservoir, un premier tuyau d'évacuation qui est en communication avec un orifice d'évacuation disposé au niveau d'une partie inférieure du corps de réservoir, et un clapet d'évacuation de liquide (006) qui est disposé sur le premier tuyau d'évacuation; un second tuyau d'évacuation est disposé à une position (point A) à l'intérieur du corps de réservoir à une première hauteur à partir du fond du réservoir, une partie, au niveau de laquelle le second tuyau d'évacuation est situé à l'extérieur du corps de réservoir, est en communication avec le premier tuyau d'évacuation au moyen d'un clapet de commande (007). Le réservoir de solution (004) peut maintenir la température, le volume et la concentration d'un liquide et parvenir à une évacuation sûre.
PCT/CN2017/117916 2017-09-21 2017-12-22 Dispositif de traitement de tranche, réservoir de solution associé et procédé d'évacuation pour réservoir de solution WO2019056632A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710858023.XA CN107564842B (zh) 2017-09-21 2017-09-21 一种硅片处理设备及其药液槽、药液槽的排放方法
CN201710858023.X 2017-09-21

Publications (1)

Publication Number Publication Date
WO2019056632A1 true WO2019056632A1 (fr) 2019-03-28

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Application Number Title Priority Date Filing Date
PCT/CN2017/117916 WO2019056632A1 (fr) 2017-09-21 2017-12-22 Dispositif de traitement de tranche, réservoir de solution associé et procédé d'évacuation pour réservoir de solution

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CN (1) CN107564842B (fr)
WO (1) WO2019056632A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111261506A (zh) * 2018-11-30 2020-06-09 东泰高科装备科技有限公司 一种半导体器件光化学刻蚀方法及装置
CN109887861A (zh) * 2019-01-14 2019-06-14 上海釜川自动化设备有限公司 一种匀流装置及其匀流实现方法
CN110923787A (zh) * 2019-12-16 2020-03-27 戚健民 一种一体无缝槽
CN113117388A (zh) * 2019-12-31 2021-07-16 盛美半导体设备(上海)股份有限公司 过滤储液装置

Citations (5)

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Publication number Priority date Publication date Assignee Title
CN104124147A (zh) * 2013-04-27 2014-10-29 上海和辉光电有限公司 蚀刻机台及用于清洗该蚀刻机台的结晶的方法
CN204230280U (zh) * 2014-12-11 2015-03-25 东方日升新能源股份有限公司 一种用于调节硅片制绒槽内减薄量均匀性的系统
CN204257600U (zh) * 2014-11-25 2015-04-08 上海集成电路研发中心有限公司 一种用于清洗半导体晶圆的清洗槽
CN204577406U (zh) * 2015-03-23 2015-08-19 宁晋赛美港龙电子材料有限公司 太阳能硅片清洗环节用的清洗槽
US20160035597A1 (en) * 2014-07-29 2016-02-04 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104124147A (zh) * 2013-04-27 2014-10-29 上海和辉光电有限公司 蚀刻机台及用于清洗该蚀刻机台的结晶的方法
US20160035597A1 (en) * 2014-07-29 2016-02-04 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
CN204257600U (zh) * 2014-11-25 2015-04-08 上海集成电路研发中心有限公司 一种用于清洗半导体晶圆的清洗槽
CN204230280U (zh) * 2014-12-11 2015-03-25 东方日升新能源股份有限公司 一种用于调节硅片制绒槽内减薄量均匀性的系统
CN204577406U (zh) * 2015-03-23 2015-08-19 宁晋赛美港龙电子材料有限公司 太阳能硅片清洗环节用的清洗槽

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CN107564842B (zh) 2019-06-14

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