WO2019038154A1 - Procédé et dispositif de formation d'une couche de polyimide sur un substrat - Google Patents

Procédé et dispositif de formation d'une couche de polyimide sur un substrat Download PDF

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Publication number
WO2019038154A1
WO2019038154A1 PCT/EP2018/072124 EP2018072124W WO2019038154A1 WO 2019038154 A1 WO2019038154 A1 WO 2019038154A1 EP 2018072124 W EP2018072124 W EP 2018072124W WO 2019038154 A1 WO2019038154 A1 WO 2019038154A1
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Prior art keywords
curing
substrate
polyimide precursor
polyimide
range
Prior art date
Application number
PCT/EP2018/072124
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German (de)
English (en)
Inventor
Christoph STERNKIKER
Markus Betz
Heiner Schulte
Original Assignee
Heraeus Noblelight Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Noblelight Gmbh filed Critical Heraeus Noblelight Gmbh
Publication of WO2019038154A1 publication Critical patent/WO2019038154A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/28—Treatment by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors

Definitions

  • This invention relates to a process for producing a polyimide film on a substrate, comprising the process steps:
  • the invention relates to an apparatus for producing a polyimide layer on a substrate.
  • the latter are used to achieve as exact as possible an orientation of the rod-shaped, nematic liquid-crystal molecules in LCDs, for this purpose the liquid crystals are brought between two substrate surfaces which are provided with a polyimide layer.
  • a polyimide layer By an orientation treatment, for example by mechanical processing or by the action of light, a molecular preferred direction is induced in the polyimide layer, which is based on the Liquid crystals transfers.
  • orientation layer and liquid crystal layer are optically based security systems, polarization converters, color filters, optical retarder elements and grayscale data storage.
  • the preparation of the polyimide layers is generally carried out by polycondensation of polyimide precursors in a two-stage process.
  • diamines are reacted with tetracarboxylic dianhydrides in a solvent such as N-methylpyrrolidone to form polyamidocarboxylic acid.
  • solvent such as N-methylpyrrolidone
  • polyamidocarboxylic acid these solutions are liquid and can be processed by conventional coating techniques.
  • the solvent is evaporated by high temperature and the reaction (polycondensation) is effected to the polyimide, whereby esterification alcohols and water are split off.
  • photosensitive polyimide precursors which contain photosensitive groups and which can be fixed by exposure.
  • DE 26 38 091 B2 discloses the production of orientation layers of polyimide on electrode base plates (carrier plates) for LCDs.
  • a 3% solution in dimethylacetamide of a polyamic acid, which is a precursor of a polyimide applied to the electrode base plate in the fluidized bed process. This is followed by air for one hour at 200 ° C under condensation and polymerization in air.
  • the thus-produced polyimide film on the electrode base plate is given a preferential direction by rubbing with a cloth to cause orientation and uniform alignment of the liquid crystal of the display.
  • a patterned polyimide layer is formed on a substrate.
  • a solution of a polyamidocarboxylic acid also referred to as "polyamic acid” for short
  • polyamic acid also referred to as "polyamic acid” for short
  • the solution is applied to the substrate and heated to evaporate the solvent and the polyamic acid is partially imidated reduces the shrinkage in the subsequent structuring.
  • a photoresist is applied and exposed through a mask. The exposed areas of the photoresist are soluble in a solvent and are washed away with the partially imidated polyamic acid below. The remaining coating is heated, whereby the polyamic acid is completely imidized.
  • the dielectric polyimide has a molecular weight range of from about 800 to about 20,000, preferably from about 1, 000 to 10,000. Hardening of the polyimide involves several heating steps, each with one-hour pre-cure stages at 100 ° C and 220 ° C, and final cure (also referred to as tempering or "aging") by holding in air at 350 ° C for one hour.
  • DE 100 03 01 1 A1 describes a method for producing a printed circuit board by coating a carrier plate with a photosensitive resin composition and subsequent crosslinking by irradiation in the presence of
  • the polyimide precursor used are diamines which are reacted together with anhydrides of the polycarboxylic acid in a solvent. After the exposure process, the resin composition is cured.
  • the curing is generally carried out by heating to a temperature between 150 and 250 ° C for at least 30 min. It is mentioned that the heating can be carried out by means of heated air, irradiation with infrared light or heated plates. And, if necessary, heating usually in air atmosphere, in an inert gas atmosphere or at reduced pressure can be performed.
  • DE 101 25 888 C2 describes an irradiation module for drying and crosslinking paints and other coatings, in particular from temperature-sensitive substrates.
  • infrared radiation with a significant active component in the wavelength range from 0.8 ⁇ to 1, 5 ⁇ (NIR) is used.
  • DE 600 31 752 T2 describes a multi-stage process for the preparation of gas separation membranes made of polyimide.
  • a polyamic acid salt is dissolved in a polar solvent and a membrane structure is poured therefrom.
  • the membrane structure is subjected to a heat treatment, whereby it transforms into the desired polyimide membrane.
  • temperatures between 100 and 200 ° C are sufficient.
  • the heating takes place by means of microwave, high-frequency excitation, infrared or in a continuous furnace.
  • the environment when heated is air, inert gas or vacuum.
  • the curing state of the polyimide layer is defined by the degree of imidization.
  • the degree of imidization should be as high as possible and as a rule at least 99%. This requires heating to a high temperature, which, however, can lead to thermal damage to the substrate or any conductor tracks already present on it due to diffusion or deformation.
  • the predetermined curing temperature can be somewhat reduced by a longer heating time, but at the cost of a longer process time.
  • the complete imidization is therefore a critical process step, which represents a bottleneck in the manufacturing process of the polyimide layer.
  • the invention is therefore based on the object of specifying a method which enables the most complete possible imidization of the polyimide precursor layers at a comparatively low temperature, even with a short reaction time.
  • the object of the invention is to provide a device which is suitable for this purpose.
  • this object is achieved on the basis of the method of the aforementioned type in that the curing of the polyimide precursor layer takes place at least temporarily in a reduced pressure environment under a curing pressure reduced with respect to atmospheric pressure and simultaneous irradiation with infrared radiation, wherein the infrared radiation is a main emission wavelength in the wavelength range from 780 to 3000 nm.
  • At least one infrared radiator is used, preferably a plurality of infrared radiators having a main emission wavelength in this wavelength range.
  • the spectral range between 780 nm and 3000 nm is also referred to as “near infrared” (abbreviated: NIR) with the subregions IR-A (from 780 nm to 1400 nm) and IR-B from 1400 to 3000 nm
  • NIR near infrared
  • the imidization of the polyimide precursor layer is based here in a combination of irradiation with photons of the infrared radiation from this wavelength range and from underpressure treatment. It has been shown that in comparison to the known methods described above, the predetermined maximum curing temperature can be significantly reduced, without long curing periods must be taken into account.
  • the low pressure contributes to the fact that gas formed during the polycondensation reaction is rapidly removed, thereby accelerating the course of the reaction.
  • the heat transfer from the heating source to the substrate and the polyimide precursor layer applied thereto may be based on heat conduction, convection and / or thermal radiation.
  • the heat transfer components from heat conduction and convection are reduced in favor of heat transfer by radiation, which can contribute to an effective and faster energy input into the polyimide precursor layer and its rapid conversion into the polyimide layer.
  • the infrared radiation has a main emission wavelength in the wavelength range of less than 2000 nm, preferably in the wavelength range between 800 and 1800 nm.
  • the curing pressure in process step (c) is below atmospheric pressure, that is below 1.103.25 hPa (1..013.25 mbar). It has surprisingly been found that a negative pressure in the complex fine or high vacuum range to be produced is not significantly better
  • the result is a cure pressure in the range of the rough vacuum, which is usually defined as the absolute pressure in the range between 1 and 300 mbar.
  • the curing pressure is at most 300 mbar, at most 10 mbar or at most 5 mbar.
  • the curing pressure may be at least 0.001 mbar, for example 0.005 mbar, at least 0.1 mbar or at least 1 mbar. Therefore, in one method, the curing pressure is preferably set to less than 10 mbar, but more preferably to the range of 1 to 5 mbar.
  • the temperature profile may have a holding time at a particular maximum curing temperature, but it may also include heating and cooling ramps without pronounced hold times. Short-term temperature peaks above 200 ° C are harmless but not preferred. In order to reduce the risk of thermal damage to the substrate or the polyimide precursor layer, the lowest possible temperature is desired. In one method, it has been proven that the curing temperature not more than 250 ° C, in particular less than
  • the achievable degree of imidization depends among other things, the duration of treatment at this temperature and the layer thickness of the polyimide precursor layer or the polyimide layer. In the case of sight thicknesses of less than 50 ⁇ m, an imidization degree of more than 99% can be achieved within short periods of less than 5 hours, in particular less than 1 hour.
  • the polyimide precursor layer has a curing time of less than 35 minutes, preferably during a curing time in the range of 10 to 30 minutes, a curing temperature of more than 150 ° C is exposed.
  • a predetermined curing temperature of at least 150 ° C, at least 175 ° C, at least 200 ° C and / or at most 250 ° C is held for a limited holding period during curing in step (c).
  • the holding period is preferably less than 5 hours or less than 1 hour.
  • the holding time can not be more than 35 minutes or not more than 20 minutes.
  • the holding time at the predetermined curing temperature is at most 1000 seconds, for example, 600 seconds or less, 400 seconds or less, 255 seconds or less, or 185 seconds or less.
  • a visually bubble-free and / or smooth surface is achieved during curing according to method step (c).
  • an imidization degree of at least 90%, in particular at least 91, 2%, at least 93.2%, at least 96.5% or at least 98.8% is achieved during curing according to process step (c).
  • an imidization degree of 100% is achieved during curing according to process step (c).
  • the substrate is a solid, in particular pore-free and / or void-free material.
  • the substrate is generally a solid of discrete length and width.
  • the substrate comprises glass, such as quartz glass, or it is made of glass.
  • the substrate is, for example, an electrode base plate for an LCD, an integrated circuit, a wafer made of a semiconductor material, in particular silicon, or a printed circuit board and / or glass.
  • the substrate is temperature-resistant to at least 250 ° C., for example chemically and / or mechanically temperature-resistant.
  • the substrate is solid to at least 250 ° C.
  • the apparatus includes a vacuum oven in which the vacuum environment needed to cure the polyimide precursor layer is provided.
  • the substrate holder is suitable for fixing one or more substrates.
  • multiple substrates may be stacked in a stack.
  • At least one heating element in the form of an infrared radiator such as a quartz radiator or a halogen radiator, is provided and arranged such that, when used as intended, it is placed on a substrate.
  • a plurality of infrared radiators are provided with a main emission wavelength in the near infrared (NIR), which are arranged for example in parallel rows above the substrate holder.
  • the infrared radiation preferably has a main emission wavelength in the wavelength range of less than 2000 nm, particularly preferably in the wavelength range between 800 to 1800 nm.
  • a power divider is provided, which in turn is connected to the control and regulation unit.
  • the power divider is usually located outside the vacuum chamber. In the case of several infrared carriers, these can have a common power divider, or they each have an individual power divider.
  • the time profiles of the negative pressure in the vacuum chamber and the radiator output of the infrared radiator can be predetermined and regulated.
  • the heat transfer from the heat source to the substrate and the polyimide precursor layer applied thereto is based essentially on thermal radiation, which can contribute to an effective and faster energy input into the polyimide precursor layer and its rapid conversion into the polyimide layer.
  • the at least one infrared radiator for generating and maintaining a curing temperature of not more than 250 ° C, in particular less than 200 ° C, and preferably for a curing temperature in the range from 150 ° C, in particular between 150 ° C and 190 ° C in the chamber.
  • the device is particularly suitable for carrying out the method according to the invention. Because it has been shown that by combining NIR
  • Infrared radiation and negative pressure treatment succeeds an advantageous development of the imidization of the polyimide precursor layer on the substrate, which shows in comparison to known treatment devices in a reduction of the curing temperature and in a shortening of the curing time.
  • the vacuum furnace is preferably for the adjustment and maintenance of a
  • the vacuum pump is preferably for Generation and maintenance of a curing pressure of less than 10 mbar and particularly preferably in the range between 1 and 5 mbar suitable.
  • a particularly preferred embodiment of the device is characterized in that the at least one infrared radiator to achieve a power density above 50 kW / m 2 , preferably to achieve a power density in the range of 100 kW / m 2 to 265 kW / m 2 , is designed in the area of the polyimide precursor layer.
  • FIG. 1 shows, in a schematic representation, a section of a device for
  • FIG. 2 shows a substrate with conductor track and polyimide layer after the imidization process, likewise in a schematic representation
  • FIG. 3 shows a diagram with a first embodiment of a temperature-time profile for the imidization using the device of FIG. 1, FIG.
  • FIG. 4 shows a diagram with a second embodiment of a temperature-time profile for the imidization using the device of FIG. 1,
  • FIG. 5 shows a diagram with a third embodiment of a temperature-time profile for the imidization using the device of Figure 1, and
  • FIG. 6 shows a diagram with a fourth embodiment of a temperature-time profile for the imidization using the device of FIG. 1.
  • the embodiment of the device shown schematically in FIG. 1 comprises a vacuum furnace 1 for curing a polyimide precursor layer 10 on a substrate 20.
  • the vacuum furnace 1 has a wall 2 which forms a vacuum chamber. mer 3 encloses.
  • the wall 2 is provided with a gas inlet 4 which is connected to a (not shown) gas source, from which the vacuum chamber 3 gases can be supplied.
  • a gas outlet 5 which is connected to a vacuum pump 6, the chamber interior 3 can be pumped off in order to provide a suitable for an imidization process low pressure.
  • the upper end of the vacuum chamber 3 is formed by an IR surface radiator module 7, which has a mounting plate 8, on the underside of a plurality of identical NIR infrared radiators 9 is mounted so that their longitudinal axes parallel to each other and in the representation of Figure 1 run perpendicular to the page level.
  • the infrared radiators 9 are so-called quartz tube radiators, which are commercially available from Heraeus Noblelight GmbH under the name "QRC infrared beam with nanoreflector.” These are characterized by a nominal main emission wavelength of 1250 nm, the radiation emission from the power consumption
  • Each of the infrared radiators 9 is connected to its own electric power divider (not shown in the figure), so that the. can be shifted by lowering the nominal power to lower powers in longer wavelength range, for example in the range of 1250 nm Radiator output is individually adjustable.
  • the substrate 20 is fixed on a holding device, which is assigned the reference numeral 10 in total and which comprises a carrier plate 1 1, a retaining ring 12 surrounding the substrate 20 and a height adjustment device 13, via which a temperature sensor can also be introduced by a vacuum-tight feedthrough. rich the support plate 1 1 is guided.
  • the vacuum pump 6 and the IR area radiator module 7 are connected to a machine controller 31 via data and power supply lines 30.
  • the substrate 20 is an electrode support plate for an LCD, an integrated circuit, a wafer, or a printed circuit board.
  • Figure 2 shows schematically a substrate 20 in the form of a multi-layer printed circuit board, on the
  • Top 22 is a conductor 23 is applied, which is completely covered by a polyimide layer 21.
  • the method is explained in more detail below using an example.
  • the production of a polyamidocarboxylic acid solution was carried out according to the method described in GB 898,651 B from 40 parts of 4,4'-diaminodiphenyloxide and 43 parts of pyromellitic dianhydride in N-methylpyrrolidone.
  • the 16% solution of polyamidocarboxylic acid in N-methylpyrrolidone has a viscosity of 8200 mPas at 25 ° C.
  • the substrate 20 provided with the conductor track 23 is coated by the so-called spin-coating.
  • the solution can also be applied by brushing, dipping, spraying dip- or roller-coating.
  • the layer thickness is about 50 ⁇ .
  • the film coating was dried at about 100 ° C for one hour and then cured.
  • Table 1 shows the development starting from initially high curing temperatures for samples 1 to 3 and particularly high degree of evacuation in sample 1 up to comparatively high absolute pressure with simultaneously low maximum curing temperature for sample 4.
  • the holding period is the period of time during which the sample is exposed to a temperature of 150 ° C or more.
  • the diagrams of FIGS. 3 to 6 show the heating profiles of sample 1 (FIG. 3), sample 2 (FIG. 4), sample 3 (FIG. 5) and sample 4 (FIG. 6). In each case, the temperature T (in ° C) is plotted against the holding time t (in s).
  • the degree of imidization is determined spectroscopically by evaluating the change in absorption bands at wavenumbers of 1715 cm -1 and 1359 cm -1 at the treatment time of 300 ° C.
  • the determination of the glass formation temperature Tg is carried out using a commercially available analysis instrument (TMA, thermo mechanical analyzer).

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

Des procédés connus pour la réalisation d'une couche de polyimide sur un substrat comprennent les étapes de procédé, consistant à : (a) préparer une solution qui contient un précurseur monomère de polyimide, (b) appliquer la solution sur une surface de substrat à revêtir avec formation d'une couche de précurseurs de polyimide et (c) durcir la couche de précurseurs de polyimide par chauffage à une température de durcissement avec formation de la couche de polyimide. Partant de ce procédé, pour obtenir un procédé qui permet, même à un temps de réaction court, une imidation la plus complète possible des couches de précurseurs de polyimide à une température comparativement plus basse, selon l'invention, le durcissement de la couche de précurseurs de polyimide est effectué au moins temporairement dans un environnement sous dépression, sous une pression de durcissement réduite par rapport à la pression atmosphérique et sous une irradiation simultanée par un rayonnement infrarouge, le rayonnement infrarouge présentant une longueur d'onde d'émission principale située dans la plage de longueurs d'onde de 780 à 3000 nm.
PCT/EP2018/072124 2017-08-23 2018-08-15 Procédé et dispositif de formation d'une couche de polyimide sur un substrat WO2019038154A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017119280.8 2017-08-23
DE102017119280.8A DE102017119280A1 (de) 2017-08-23 2017-08-23 Verfahren und Vorrichtung zur Herstellung einer Polyimidschicht auf einem Substrat

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WO2019038154A1 true WO2019038154A1 (fr) 2019-02-28

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TW (1) TW201921503A (fr)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111552102A (zh) * 2020-05-19 2020-08-18 Tcl华星光电技术有限公司 抗压液晶显示结构及其制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019114806A1 (de) * 2019-06-03 2020-12-03 Value & Intellectual Properties Management Gmbh Verfahren zur Herstellung elektrischer oder elektronischer Bauteile oder Schaltungen auf einem flexiblen flächigen Träger

Citations (13)

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GB898651A (en) 1958-09-19 1962-06-14 Du Pont Polymers containing polyamide-acid recurring units and their production
DE2638091B2 (de) 1975-08-27 1979-09-06 Dai Nippon Insatsu K.K., Tokio Elektrooptische Zelle
EP0019391A1 (fr) 1979-05-12 1980-11-26 Fujitsu Limited Procédé de fabrication d'un dispositif électronique avec structure de câblage à plusieurs couches
US4369090A (en) 1980-11-06 1983-01-18 Texas Instruments Incorporated Process for etching sloped vias in polyimide insulators
EP0255037A2 (fr) * 1986-07-30 1988-02-03 Hitachi, Ltd. Méthode de formation d'un film polyimide par dépôt chimique en phase vapeur
US4880722A (en) 1985-12-05 1989-11-14 International Business Machines Corporation Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
DE10003011A1 (de) 1999-01-25 2000-08-31 Riken Wako Lichtempfindliche Harzzusammensetzung, Leiterplatte, Trägermaterial für die Anordnung von Halbleiterchips, Halbleitervorrichtung und Verfahren zur Herstellung der Leiterplatte, des Trägermaterials für die Anordnung von Halbleiterchips und der Halbleitervorrichtung
EP1123954A1 (fr) * 1999-08-06 2001-08-16 PI R & D Co., Ltd. Composition destinee a l'electrodeposition de polyimide et procede de formation de film de polyimide a motifs a partir de cette composition
DE10125888C2 (de) 2001-04-18 2003-03-13 Advanced Photonics Tech Ag Strahlermodul und Hochleistungs-Bestrahlungsanlage
DE60031752T2 (de) 1999-09-24 2007-09-20 L'Air Liquide, S.A. a Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procédés Georges Claude Verfahren zur Herstellung von Gastrennungsmembranen aus Polyimid
EP1918413A1 (fr) * 2005-08-25 2008-05-07 Tokki Corporation Procédé de dépôt sous vide d un matériau organique et appareil correspondant
DE102007048564A1 (de) 2007-10-09 2009-04-23 Heraeus Noblelight Gmbh Vorrichtung für eine Bestrahlungseinheit
US9276139B2 (en) * 2011-03-25 2016-03-01 Ube Industries, Ltd. Polyimide film production method, polyimide film production apparatus, and polyimide film

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB898651A (en) 1958-09-19 1962-06-14 Du Pont Polymers containing polyamide-acid recurring units and their production
DE2638091B2 (de) 1975-08-27 1979-09-06 Dai Nippon Insatsu K.K., Tokio Elektrooptische Zelle
EP0019391A1 (fr) 1979-05-12 1980-11-26 Fujitsu Limited Procédé de fabrication d'un dispositif électronique avec structure de câblage à plusieurs couches
US4369090A (en) 1980-11-06 1983-01-18 Texas Instruments Incorporated Process for etching sloped vias in polyimide insulators
US4880722A (en) 1985-12-05 1989-11-14 International Business Machines Corporation Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
EP0255037A2 (fr) * 1986-07-30 1988-02-03 Hitachi, Ltd. Méthode de formation d'un film polyimide par dépôt chimique en phase vapeur
DE10003011A1 (de) 1999-01-25 2000-08-31 Riken Wako Lichtempfindliche Harzzusammensetzung, Leiterplatte, Trägermaterial für die Anordnung von Halbleiterchips, Halbleitervorrichtung und Verfahren zur Herstellung der Leiterplatte, des Trägermaterials für die Anordnung von Halbleiterchips und der Halbleitervorrichtung
EP1123954A1 (fr) * 1999-08-06 2001-08-16 PI R & D Co., Ltd. Composition destinee a l'electrodeposition de polyimide et procede de formation de film de polyimide a motifs a partir de cette composition
DE60031752T2 (de) 1999-09-24 2007-09-20 L'Air Liquide, S.A. a Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procédés Georges Claude Verfahren zur Herstellung von Gastrennungsmembranen aus Polyimid
DE10125888C2 (de) 2001-04-18 2003-03-13 Advanced Photonics Tech Ag Strahlermodul und Hochleistungs-Bestrahlungsanlage
EP1918413A1 (fr) * 2005-08-25 2008-05-07 Tokki Corporation Procédé de dépôt sous vide d un matériau organique et appareil correspondant
DE102007048564A1 (de) 2007-10-09 2009-04-23 Heraeus Noblelight Gmbh Vorrichtung für eine Bestrahlungseinheit
US9276139B2 (en) * 2011-03-25 2016-03-01 Ube Industries, Ltd. Polyimide film production method, polyimide film production apparatus, and polyimide film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111552102A (zh) * 2020-05-19 2020-08-18 Tcl华星光电技术有限公司 抗压液晶显示结构及其制造方法

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