WO2019033974A1 - 一种多功能氢化物气相外延生长系统及应用 - Google Patents

一种多功能氢化物气相外延生长系统及应用 Download PDF

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WO2019033974A1
WO2019033974A1 PCT/CN2018/099431 CN2018099431W WO2019033974A1 WO 2019033974 A1 WO2019033974 A1 WO 2019033974A1 CN 2018099431 W CN2018099431 W CN 2018099431W WO 2019033974 A1 WO2019033974 A1 WO 2019033974A1
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growth
gas
gallium oxide
gallium
vapor phase
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修向前
李悦文
熊则宁
张�荣
华雪梅
谢自力
陈鹏
韩平
陆海
施毅
郑有炓
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南京大学
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

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  • the invention relates to an improved novel multifunctional hydride vapor phase epitaxial growth system and application thereof, which can be used for the growth of a gallium oxide film, a growth of a gallium nitride film, or a gallium nitride/gallium oxide composite. Growth of structural films.
  • Group III-V nitride materials (also known as GaN-based materials) mainly composed of GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have received international attention in recent years.
  • GaN-based materials are direct band gap wide bandgap semiconductor materials with a continuously variable direct bandgap between 1.9 and 6.2 eV, excellent physical and chemical stability, high saturation electron drift velocity, high breakdown field strength and high thermal conductivity.
  • Excellent performance such as short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage, high-temperature microelectronic device preparation, etc., used in the manufacture of blue, violet, ultraviolet light-emitting devices, detectors, high temperature, high frequency, High field high power devices, field emission devices, anti-radiation devices, piezoelectric devices, etc.
  • GaN-based materials Due to the physical properties of the GaN-based material itself, the growth of GaN bulk single crystals has great difficulties and has not yet been put into practical use. Hydride vapor phase epitaxy can be used for homoepitaxial growth of self-supporting GaN substrates due to its high growth rate and lateral-longitudinal epitaxy, which has attracted extensive attention and research.
  • the outstanding advantage of this method is that the growth rate of GaN is very high, generally up to tens to thousands of micrometers per hour.
  • the dislocation density in the epitaxial layer is 1-2 orders of magnitude lower than other methods. Generally, the dislocation density of the direct HVPE epitaxial layer is about 108 cm-2. Further research can better reduce the dislocation density in the epitaxial layer.
  • GaN-based materials are directly grown on a sapphire substrate by a hydride vapor phase epitaxy (HVPE) method, and then separated to obtain a GaN substrate material.
  • HVPE hydride vapor phase epitax
  • Ga 2 O 3 is a transparent oxide semiconductor material which has broad application prospects in optoelectronic devices, and is used as an insulating layer for Ga-based semiconductor materials, and as an ultraviolet filter. Since a gallium oxide single crystal has a property of transmitting blue light and ultraviolet light, a gallium oxide single crystal can be used as a substrate material of GaN. In 2005, Lightwave and Waseda University jointly developed a conductive gallium oxide single crystal with a resistivity of 0.02Q ⁇ cm. A vertical light-emitting blue light-emitting diode can be obtained by growing a multilayer gallium nitride series compound by MOCVD on a gallium oxide substrate.
  • Gallium oxide single crystals are generally prepared by CVD, hydrothermal methods, etc., but such methods are slow in growth and limited in size. It can also be epitaxially obtained by a similar HVPE method. The ammonia gas in the HVPE reaction-grown GaN is replaced by oxygen, and different process parameters such as temperature, flow rate, pressure, etc. can be controlled to grow gallium oxide. Due to the outstanding advantages of hydride vapor phase epitaxy systems, it can be used for the preparation of large size gallium oxide substrates.
  • the present invention provides an improved novel multifunctional hydride vapor phase epitaxial growth system and application thereof, which can be used for the growth of gallium oxide thin films, for the growth of gallium nitride thin films, or for gallium nitride/oxidation. Growth of a gallium composite structure film.
  • the object of the present invention is to provide a hydride vapor phase epitaxy system and application, which has high growth rate and good quality of grown materials, and is generally used for the preparation of gallium nitride substrate materials.
  • the present invention proposes an improved hydride vapor phase epitaxy system which can be used for the growth of gallium oxide thin films, for the growth of gallium nitride thin films, or for the growth of gallium nitride/gallium oxide composite structural thin films. Due to the high growth rate of the HVPE process, the growth system of the present invention can also be used for the preparation of large size gallium oxide substrate materials.
  • the technical scheme of the present invention is: a hydride vapor phase epitaxial growth system, which is an improved basic hydride vapor phase epitaxial growth system, which increases the corresponding oxygen transport pipeline to transport oxygen into the system as an oxygen source for growing a gallium oxide film or Thick film material.
  • the system includes a growth zone and a gas path system.
  • the intake pipe in the gas path system includes an ammonia gas line, an oxygen line, and a chlorine gas line.
  • the growth zone of the epitaxial growth system includes a low temperature growth zone and a high temperature growth zone, and the outer side of the high temperature growth zone is an exhaust gas discharge pipe; a Ga boat is also arranged near the low temperature growth zone, and the chlorine gas pipeline extends into the Ga boat; the system can For the growth of gallium oxide thin films, it can also be used for the growth of gallium nitride thin films or for the growth of gallium nitride/gallium oxide composite structural films. Ammonia gas is used as a reaction gas in the growth of gallium nitride, and oxygen is used as a reaction gas in the growth of gallium oxide. The system can be used for the growth of gallium oxide thin films, for the growth of gallium nitride thin films, or for the growth of gallium nitride/gallium oxide composite structural films.
  • a growth temperature of 800-900 ° C metal gallium reacts with hydrogen chloride or chlorine gas to form GaCl is used as the source of gallium and oxygen is used as the source of oxygen.
  • GaCl and O 2 are mixed and reacted to obtain a gallium oxide film.
  • the temperature in the high temperature region is 900-1150 ° C.
  • the reaction is carried out under normal pressure, and the O/Ga atomic input ratio is 1.5-15.
  • Gallium nitride and gallium oxide may be epitaxial substrates to each other.
  • the application of the invention includes the following steps:
  • GaN film is prepared by hydride vapor phase epitaxy.
  • metal gallium reacts with hydrogen chloride or chlorine to form GaCl as a gallium source.
  • the temperature is generally 800-900 ° C.
  • Oxygen is used as the oxygen source in the high temperature growth region GaCl and O 2 .
  • the reaction occurs in a mixture to obtain a gallium oxide film, and the temperature in the high temperature region is generally 900 to 1050 °C.
  • the reaction is carried out at one atmosphere and the O 2 /Ga input flow ratio is 1.5-15. By adjusting the growth time, gallium oxide films of different thicknesses can be obtained.
  • the hydrogen chloride gas is turned off, the continuous input of oxygen is maintained, and the temperature is adjusted at 900-1000 ° C for 1-5 h.
  • a gallium oxide film is grown in a hydride vapor phase epitaxial growth system.
  • the temperature is 800-900 °C
  • the metal gallium reacts with hydrogen chloride or chlorine to form GaCl as the gallium source
  • the oxygen as the oxygen source reacts in the high temperature growth region GaCl and O 2 to obtain the gallium oxide film
  • the temperature in the high temperature region is 900. -1150 ° C.
  • the reaction is carried out under normal pressure with an O/Ga input ratio of 1.5-15.
  • a long gallium oxide film is grown, and then a GaN film is grown in situ by HVPE; or a gallium nitride film is grown in a hydride vapor phase epitaxial growth system, and then the Ga 2 O 3 film is continuously grown.
  • Gallium nitride and gallium oxide may be epitaxial substrates to each other.
  • the invention has the beneficial effects: an improved novel multifunctional hydride vapor phase epitaxial growth system can be used, which can be used for the growth of a gallium oxide film, a growth of a gallium nitride film, or a gallium nitride/ Growth of a gallium oxide composite structure film.
  • FIG. 1 is a schematic view of a hydride vapor phase epitaxy apparatus of the present invention.
  • the method and process of the invention comprises: preparing a gallium oxide film by a hydride vapor phase epitaxy method, and preparing a gallium oxide film by a hydride vapor phase epitaxy method.
  • the preparation of a gallium oxide thin film material includes the following steps: cleaning and processing of a substrate (sapphire or silicon wafer).
  • GaN film is prepared by hydride vapor phase epitaxy.
  • metal gallium reacts with hydrogen chloride or chlorine to form GaCl as a gallium source.
  • the temperature is generally 800-900 ° C.
  • Oxygen is used as an oxygen source to react with GaCl and O 2 in the high temperature growth region.
  • a gallium oxide film is obtained, and the temperature in the high temperature region is generally 900-1050 °C.
  • the reaction is carried out at one atmosphere and the O2/Ga input flow ratio is 1.5-15. By adjusting the growth time, gallium oxide films of different thicknesses can be obtained.
  • the hydrogen chloride gas is turned off, the continuous input of oxygen is maintained, and the annealing temperature is performed at 900-1000 ° C for 1-5 h.
  • the oxygen is turned off, and nitrogen gas is continuously supplied. After the temperature is lowered to room temperature, the sample is taken out to obtain a gallium oxide film.
  • the growth zone is a double-temperature zone resistance furnace (both tubular or box type), and a gas path system.
  • the gas pipeline system includes a main nitrogen pipeline and an ammonia gas pipeline (or a nitrogen pipeline), that is, At the same time, ammonia and nitrogen gas, oxygen pipeline and chlorine gas pipeline are used (or nitrogen gas pipeline is applied, that is, chlorine gas and nitrogen gas are simultaneously introduced), and ammonia gas is used as a reaction gas when growing gallium nitride, and gallium oxide is grown.
  • Oxygen is used as the reaction gas;
  • the growth zone of the epitaxial growth system includes a low temperature growth zone and a high temperature growth zone; the outer side of the high temperature growth zone is an exhaust gas discharge pipe; the low temperature growth zone is further provided with a Ga boat, and the chlorine gas pipeline extends into the Ga boat;
  • the system can be used for the growth of gallium oxide thin films, for the growth of gallium nitride thin films, or for the growth of gallium nitride/gallium oxide composite structural films.
  • Ammonia gas is used as a reaction gas in the growth of gallium nitride
  • oxygen is used as a reaction gas in the growth of gallium oxide.
  • the system can be used for the growth of gallium oxide thin films, for the growth of gallium nitride thin films, or for the growth of gallium nitride/gallium oxide composite structural films.
  • a mass flow meter is connected in series on the intake line.

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Abstract

一种氢化物气相外延生长系统，包括生长区和气路系统，气路系统中进气管路包括氨气管路、氧气管路和氯气管路，在生长氮化镓时使用氨气作为反应气体，在生长氧化镓时使用氧气作为反应气体；外延生长系统的生长区包括低温生长区和高温生长区，高温生长区的外侧为废气排出管路；低温生长区附近还设有Ga舟，氯气管路伸进Ga舟；该系统既用于氧化镓薄膜的生长、用于氮化镓薄膜的生长或用于氮化镓/氧化镓复合结构薄膜的生长。

Description

一种多功能氢化物气相外延生长系统及应用 技术领域
本发明涉及一种改进的新型多功能氢化物气相外延生长系统及应用，既可以用于氧化镓薄膜的生长，也可以用于氮化镓薄膜的生长，或用于氮化镓/氧化镓复合结构薄膜的生长。
背景技术
以GaN及InGaN、AlGaN合金材料为主的III-V族氮化物材料(又称GaN基材料)是近几年来国际上倍受重视的新型半导体材料。GaN基材料是直接带隙宽禁带半导体材料，具有1.9—6.2eV之间连续可变的直接带隙，优异的物理、化学稳定性，高饱和电子漂移速度，高击穿场强和高热导率等优越性能，在短波长半导体光电子器件和高频、高压、高温微电子器件制备等方面具有重要的应用，用于制造比如蓝、紫、紫外波段发光器件、探测器件，高温、高频、高场大功率器件，场发射器件，抗辐射器件，压电器件等。
由于GaN基材料本身物理性质的限制，GaN体单晶的生长具有很大的困难，尚未实用化。氢化物气相外延由于具有高的生长率和横向-纵向外延比，可用于同质外延生长自支撑GaN衬底，引起广泛地重视和研究。此法的突出优点是GaN生长速率很高，一般可达几十到上千微米/小时。而外延层中位错密度与其他方法相比低1-2个数量级，一般直接HVPE外延层的位错密度达108cm-2左右。进一步研究可以更好的降低外延层中的位错密度。目前主要采用氢化物气相外延(HVPE)方法在蓝宝石衬底上直接生长GaN基材料，再加以分离，获得GaN衬底材料。
氧化镓(Ga2O3)也是一种宽禁带半导体，Eg＝4.9eV，其导电性能和发光特性长期以来一直引起人们的注意。Ga 2O 3是一种透明的氧化物半导体材料，在光电子器件方面有广阔的应用前景，被用作于Ga基半导体材料的绝缘层，以及紫外线滤光片。由于氧化镓单晶有透过蓝光和紫外光的性质，氧化镓单晶可用作GaN的衬底材料。光波公司和早稻田大学在2005年合作开发了导电性氧化镓单晶，其电阻率为0.02Q·cm。在氧化镓衬底上用MOCVD法生长多层氮化镓系列化合物，就可得到垂直发光的蓝光发光二极管。
氧化镓单晶一般采用CVD、水热法等方法制备，但是此类方法生长速度慢， 尺寸也受到限制。也可以用类似HVPE方法外延得到，将HVPE反应生长GaN中的氨气替换为氧气，控制不同的工艺参数如温度、流量、压力等即可生长氧化镓。由于氢化物气相外延系统的突出优点，可以用于大尺寸氧化镓衬底的制备。本发明给出了一种改进的新型多功能氢化物气相外延生长系统及应用，既可以用于氧化镓薄膜的生长，也可以用于氮化镓薄膜的生长，或用于氮化镓/氧化镓复合结构薄膜的生长。
发明内容
本发明目的是：提出一种氢化物气相外延系统及应用，生长速率高、生长的材料质量好，一般用于氮化镓衬底材料的制备。本发明提出了一种改进的氢化物气相外延系统，既可以用于氧化镓薄膜的生长，也可以用于氮化镓薄膜的生长，或用于氮化镓/氧化镓复合结构薄膜的生长。由于HVPE方法生长速率高，本发明生长系统也可以用于大尺寸氧化镓衬底材料的制备。
本发明技术方案是：一种氢化物气相外延生长系统，是改进基本的氢化物气相外延生长系统，增加相应的氧气输运管路输运氧气进入系统作为氧源，用于生长氧化镓薄膜或厚膜材料。系统包括生长区和气路系统，气路系统中进气管路包括氨气管路、氧气管路和氯气管路，在生长氮化镓时使用氨气作为反应气体，在生长氧化镓时使用氧气作为反应气体；外延生长系统的生长区包括低温生长区和高温生长区，高温生长区的外侧为废气排出管路；低温生长区附近还设有Ga舟，氯气管路伸进Ga舟；该系统既可以用于氧化镓薄膜的生长，也可以用于氮化镓薄膜的生长，或用于氮化镓/氧化镓复合结构薄膜的生长。在生长氮化镓时使用氨气作为反应气体，在生长氧化镓时使用氧气作为反应气体。该系统既可以用于氧化镓薄膜的生长，也可以用于氮化镓薄膜的生长，或用于氮化镓/氧化镓复合结构薄膜的生长。
所述的氢化物气相外延生长系统的应用，氢化物气相外延生长系统中生长氧化镓薄膜，氧化镓薄膜生长时，在低温区，生长温度为800-900℃，金属镓与氯化氢或氯气反应生成GaCl作为镓源，氧气作为氧源；在高温生长区GaCl和O 2混合发生反应，得到氧化镓薄膜，高温区温度为900-1150℃；反应在常压下进行，O/Ga原子输入比为1.5-15。
所述的氢化物气相外延生长氮化镓和氧化镓复合薄膜结构的方法，氢化物气 相外延生长系统中先生长氧化镓薄膜，然后再原位HVPE生长GaN薄膜；或在氢化物气相外延生长系统中先生长氮化镓薄膜，然后再继续生长Ga 2O 3薄膜。氮化镓和氧化镓可以互为外延衬底。
本发明应用，氧化镓薄膜材料的制备，包括下面几步：
1、衬底(蓝宝石或硅片)的清洗和处理。
2、氢化物气相外延法制备氧化镓薄膜，在低温区,金属镓与氯化氢或氯气反应生成GaCl作为镓源，温度一般为800-900℃；氧气作为氧源，在高温生长区GaCl和O 2混合发生反应，得到氧化镓薄膜，高温区温度一般为900-1050℃。反应在一个大气压下进行，O 2/Ga输入流量比为1.5-15。调整生长时间，可以得到不同厚度的氧化镓薄膜。
3、氧化镓薄膜生长完成后，关闭氯化氢气体，维持氧气的持续输入，调整温度在900-1000℃进行退火，时间1-5h。
4、关闭氧气，并持续通入氮气，待温度降至室温，取出样品，即可得到氧化镓薄膜。
氢化物气相外延生长系统中生长氧化镓薄膜。在低温区，温度800-900℃，金属镓与氯化氢或氯气反应生成GaCl作为镓源；氧气作为氧源，在高温生长区GaCl和O 2混合发生反应，得到氧化镓薄膜，高温区温度为900-1150℃。反应在常压下进行，O/Ga输入比为1.5-15。
氢化物气相外延生长系统中先生长氧化镓薄膜，然后再原位HVPE生长GaN薄膜；或在氢化物气相外延生长系统中先生长氮化镓薄膜，然后再继续生长Ga 2O 3薄膜。氮化镓和氧化镓可以互为外延衬底。
HVPE方法生长氮化镓的基本反应如下：
Figure PCTCN2018099431-appb-000001
GaCl+NH 3→GaN+HCl+H 2
HVPE方法生长氧化镓的基本反应如下：
Figure PCTCN2018099431-appb-000002
GaCl+O 2→Ga 2O 3+Cl 2
本发明有益效果：给出了一种改进的新型多功能氢化物气相外延生长系统，既可以用于氧化镓薄膜的生长，也可以用于氮化镓薄膜的生长，或用于氮化镓/氧化镓复合结构薄膜的生长。
附图说明
图1为本发明氢化物气相外延设备示意图。
具体实施方式
本发明方法和工艺包括：氢化物气相外延方法制备氧化镓薄膜，氢化物气相外延方法制备氧化镓薄膜。
本发明技术实施方式之一，氧化镓薄膜材料的制备，包括下面几步：衬底(蓝宝石或硅片)的清洗和处理。
氢化物气相外延法制备氧化镓薄膜，在低温区,金属镓与氯化氢或氯气反应生成GaCl作为镓源，温度一般为800-900℃；氧气作为氧源，在高温生长区GaCl和O2混合发生反应，得到氧化镓薄膜，高温区温度一般为900-1050℃。反应在一个大气压下进行，O2/Ga输入流量比为1.5-15。调整生长时间，可以得到不同厚度的氧化镓薄膜。
氧化镓薄膜生长完成后，关闭氯化氢气体，维持氧气的持续输入，调整温度在900-1000℃进行退火，时间1-5h。
关闭氧气，并持续通入氮气，待温度降至室温，取出样品，即可得到氧化镓薄膜。
生长区为双温区的电阻炉(管式或箱式均可)，另有气路系统，气路系统中进气管路包括主氮气管路、氨气管路(或与氮气管路套用，即同时通入氨气和氮气)、氧气管路和氯气管路(或与氮气管路套用，即同时通入氯气和氮气)，在生长氮化镓时使用氨气作为反应气体，在生长氧化镓时使用氧气作为反应气体；外延生长系统的生长区包括低温生长区和高温生长区，高温生长区的外侧为废气排出管路；低温生长区还设有Ga舟，氯气管路伸进Ga舟；该系统既可以用于氧化镓薄膜的生长，也可以用于氮化镓薄膜的生长，或用于氮化镓/氧化镓复合结构薄膜的生长。在生长氮化镓时使用氨气作为反应气体，在生长氧化镓时使用氧气作为反应气体。该系统既可以用于氧化镓薄膜的生长，也可以用于氮化镓薄膜的生长，或用于氮化镓/氧化镓复合结构薄膜的生长。进气管路上均串联有质量流量计。 所属领域的普通技术人员应当理解：以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (4)

  1. 一种氢化物气相外延生长系统，其特征是包括生长区和气路系统，气路系统中进气管路包括氨气管路、氧气管路和氯气管路，在生长氮化镓时使用氨气作为反应气体，在生长氧化镓时使用氧气作为反应气体；外延生长系统的生长区包括低温生长区和高温生长区，高温生长区的外侧为废气排出管路；低温生长区附近还设有Ga舟，氯气管路伸进Ga舟；该系统既用于氧化镓薄膜的生长、用于氮化镓薄膜的生长或用于氮化镓/氧化镓复合结构薄膜的生长。
  2. 根据权利要求1所述的氢化物气相外延生长系统，其特征是生长区为双温区的电阻炉，另有气路系统，气路系统中进气管路包括主氮气管路、氨气管路、或与氮气管路套用，即同时通入氨气和氮气、氧气管路和氯气管路、氯气管路或与氮气管路套用、即同时通入氯气和氮气，在生长氮化镓时使用氨气作为反应气体，在生长氧化镓时使用氧气作为反应气体；外延生长系统的生长区包括低温生长区和高温生长区，高温生长区的外侧为废气排出管路。
  3. 根据权利要求1或2所述的氢化物气相外延生长系统的应用，其特征是氢化物气相外延生长系统中生长氧化镓薄膜，氧化镓薄膜生长时，在低温区，生长温度为800-900℃，金属镓与氯化氢或氯气反应生成GaCl作为镓源，氧气作为氧源；在高温生长区GaCl和O 2混合发生反应，得到氧化镓薄膜，高温区温度为900-1150℃；反应在常压下进行，O/Ga原子输入比为1.5-15。
  4. 根据权利要求3所述的氢化物气相外延生长氮化镓和氧化镓复合薄膜结构的方法，其特征是氢化物气相外延生长系统中先生长氧化镓薄膜，然后再原位HVPE生长GaN薄膜；或在氢化物气相外延生长系统中先生长氮化镓薄膜，然后再继续生长Ga 2O 3薄膜，氮化镓和氧化镓可以互为外延衬底。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112126976A (zh) * 2019-06-25 2020-12-25 东泰高科装备科技有限公司 氢化物气相外延的镓舟结构

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107574479A (zh) * 2017-08-14 2018-01-12 南京大学 一种多功能氢化物气相外延生长系统及应用
CN108987257B (zh) * 2018-07-12 2021-03-30 南京南大光电工程研究院有限公司 利用卤化物气相外延法在Si衬底上生长Ga2O3薄膜的方法
CN111663181B (zh) * 2020-05-20 2022-02-08 辛国庆 一种氧化镓膜的制备方法及其应用
CN112239889B (zh) * 2020-10-21 2023-05-09 国网山东省电力公司电力科学研究院 减缓卤化物气相外延生长系统中管壁沉积氮化镓的方法及卤化物气相外延生长系统
CN112553692A (zh) * 2020-12-08 2021-03-26 山东大学 一种大尺寸氮化镓单晶生长设备及大尺寸体块氮化镓单晶的生长方法
CN113394079A (zh) * 2021-06-18 2021-09-14 中国电子科技集团公司第四十六研究所 一种采用卤化物气相外延法生长氧化镓外延层的方法
CN114908419B (zh) * 2022-04-29 2024-03-29 杭州富加镓业科技有限公司 一种在高阻型氧化镓衬底上制备同质外延氧化镓薄膜的方法及mocvd设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1384533A (zh) * 2002-01-09 2002-12-11 南京大学 一种改进氢化物气相外延生长GaN材料均匀性的方法和装置
WO2012141317A1 (ja) * 2011-04-15 2012-10-18 三菱化学株式会社 Iii族窒化物結晶の製造方法およびiii族窒化物結晶
JP2016155714A (ja) * 2015-02-25 2016-09-01 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
CN105992841A (zh) * 2013-09-30 2016-10-05 株式会社田村制作所 β-Ga2O3系单晶膜的生长方法和晶体层叠结构体
JP2017007871A (ja) * 2015-06-16 2017-01-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
CN107574479A (zh) * 2017-08-14 2018-01-12 南京大学 一种多功能氢化物气相外延生长系统及应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1694225A (zh) * 2005-05-13 2005-11-09 中国科学院上海光学精密机械研究所 GaN/β－Ga2O3复合衬底的材料及其制备方法
CN100418240C (zh) * 2005-10-18 2008-09-10 南京大学 在β三氧化二镓衬底上生长InGaN/GaN量子阱LED器件结构的方法
CN102465333B (zh) * 2010-11-18 2015-04-15 南京大学 一种立式氢化物气相外延生长系统
CN103173738A (zh) * 2013-03-22 2013-06-26 新疆大学 一种Ga空位可调的GaN纳米结构的制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1384533A (zh) * 2002-01-09 2002-12-11 南京大学 一种改进氢化物气相外延生长GaN材料均匀性的方法和装置
WO2012141317A1 (ja) * 2011-04-15 2012-10-18 三菱化学株式会社 Iii族窒化物結晶の製造方法およびiii族窒化物結晶
CN105992841A (zh) * 2013-09-30 2016-10-05 株式会社田村制作所 β-Ga2O3系单晶膜的生长方法和晶体层叠结构体
JP2016155714A (ja) * 2015-02-25 2016-09-01 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP2017007871A (ja) * 2015-06-16 2017-01-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
CN107574479A (zh) * 2017-08-14 2018-01-12 南京大学 一种多功能氢化物气相外延生长系统及应用

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112126976A (zh) * 2019-06-25 2020-12-25 东泰高科装备科技有限公司 氢化物气相外延的镓舟结构
CN112126976B (zh) * 2019-06-25 2023-02-10 紫石能源有限公司 氢化物气相外延的镓舟结构

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