WO2019028973A1 - 显示面板及其制造方法 - Google Patents

显示面板及其制造方法 Download PDF

Info

Publication number
WO2019028973A1
WO2019028973A1 PCT/CN2017/102603 CN2017102603W WO2019028973A1 WO 2019028973 A1 WO2019028973 A1 WO 2019028973A1 CN 2017102603 W CN2017102603 W CN 2017102603W WO 2019028973 A1 WO2019028973 A1 WO 2019028973A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
quantum dot
display panel
light emitting
frame
Prior art date
Application number
PCT/CN2017/102603
Other languages
English (en)
French (fr)
Inventor
卓恩宗
Original Assignee
惠科股份有限公司
重庆惠科金渝光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 惠科股份有限公司, 重庆惠科金渝光电科技有限公司 filed Critical 惠科股份有限公司
Priority to US16/637,537 priority Critical patent/US11201305B2/en
Publication of WO2019028973A1 publication Critical patent/WO2019028973A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present application relates to the field of display technologies, and more particularly to a display panel and a method of fabricating the same.
  • the liquid crystal display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • Most of the liquid crystal displays on the market are backlight type liquid crystal displays, which include a liquid crystal panel and a backlight module.
  • the working principle of the liquid crystal panel is to place liquid crystal molecules in two parallel glass substrates, and apply a driving voltage on the two glass substrates to control the rotation direction of the liquid crystal molecules to refract the light of the backlight module to generate a picture.
  • a thin film transistor liquid crystal display includes a liquid crystal panel including a color filter substrate (CF Substrate, also referred to as a color filter substrate) and a thin film transistor array substrate (Thin Film Transistor Substrate, TFT Substrate), and a backlight module.
  • CF Substrate also referred to as a color filter substrate
  • TFT Substrate thin film transistor array substrate
  • a transparent electrode exists on the opposite inner side of the substrate.
  • a layer of liquid crystal molecules Liquid Crystal, LC is sandwiched between the two substrates.
  • TFT-LCD has defects such as low image and color recognition, and the display technology field is fast, the viewing angle is wider, the contrast is higher, the lighter and thinner, and the active OLED can enter the display technology competition.
  • the reliability problem of OLED has become an insurmountable gap, and the high cost has forced OLEDs to be widely used in the large-screen field.
  • the technical problem to be solved by the present application is to provide a display panel with uniform illumination color.
  • the present application also provides a display device.
  • a display panel includes a substrate, an active switch, and a light emitting diode formed on the substrate, the active switch being disposed between the substrate and the light emitting diode,
  • the light emitting diode includes: a first electrode, a second electrode, and a quantum dot light emitting layer;
  • the quantum dot light emitting layer includes a mesoporous frame, and the mesoporous frame adopts a self-assembled form, and the mesoporous frame is used as a main material.
  • a quantum dot is disposed in the mesoporous frame; the first electrode, the quantum dot emitting layer, and the second electrode are sequentially stacked.
  • a hole is disposed in the mesoporous frame, and the quantum dot is filled in the hole.
  • the organic molecular stencil has a good shaping effect, and the quantum dots can be more evenly dispersed in the gap between the organic molecular stencil and the inner wall of the hole.
  • the radius of the quantum dot is less than or equal to the exciton Bohr radius.
  • Quantum dots have a very significant quantum confinement effect because the radius is less than or equal to the exciton Bohr radius of the material.
  • quantum dots with small physical dimensions since the movement of carriers in all directions is limited, the original continuous band structure will become a quasi-discrete energy level, which will increase the effective band gap of the material and then radiate Photons with higher energy and shorter wavelengths. It is not difficult to see that for the quantum dots of the same material, as the physical size shrinks, the emission spectrum can realize the transition from red to blue, which also creates the most striking feature of quantum dots - spectrally adjustable Sex.
  • the quantum dot emission spectrum has a narrow half-width and good color purity and color saturation.
  • quantum dots are inorganic semiconductor materials with environmental stability that organic chromophores cannot.
  • the quantum dots are silicon nanocrystals.
  • quantum dots are silicon nanocrystals.
  • quantum dots is a material choice for quantum dots.
  • the mesoporous frame is a self-assembled mesoporous silica frame.
  • This is a specific silica framework structure, and the use of a pore structure facilitates the implementation of a self-assembled molecular stencil solution oxide.
  • the inner wall of the hole is a silica hole wall.
  • the hole wall is a material choice for the hole wall.
  • the pores have a diameter of 2-10 nm. This is a preferred hole size.
  • the display panel comprises a vacuum layer and a sealing portion, and the sealing portion interacts with the light emitting diode to form the vacuum layer, and the vacuum layer is disposed on the light emitting diode.
  • the specific structural composition of the display panel is the specific structural composition of the display panel.
  • the present application also discloses a display panel.
  • a display panel includes a substrate, an active switch, and a light emitting diode formed on the substrate, the active switch is disposed between the substrate and the light emitting diode, and the light emitting diode comprises: a first An electrode, a second electrode, and a quantum dot emitting layer;
  • the quantum dot emitting layer includes a mesoporous frame, and the mesoporous frame adopts a self-assembled form, and the mesoporous frame is configured a body material, a quantum dot is disposed in the mesoporous frame, the mesoporous frame is a self-assembled mesoporous silica frame;
  • the display panel includes a vacuum layer and a sealing portion, and the sealing portion and the light emitting diode Acting to form the vacuum layer, the vacuum layer is disposed on the light emitting diode;
  • the first electrode, the quantum dot emitting layer and the second electrode are sequentially stacked; the self-assembled me
  • the present application also discloses a method of manufacturing a display panel.
  • a manufacturing method of a display panel comprising: providing a substrate; forming a first electrode on the substrate; forming a quantum dot light-emitting layer on the first electrode; and on the quantum dot light-emitting layer Forming a second electrode; the step of forming a quantum dot light-emitting layer on the first electrode includes: forming a mesoporous frame, the mesoporous frame adopting a self-assembled form, and the mesoporous frame is used as a host material, a hole is formed in the hole frame; an organic molecular stencil is filled in the hole, a gap is formed between the organic molecular stencil and the inner wall of the hole; hydrogen gas is injected into the gap; and silicon hydride is injected into the hole And the organic molecular stencil, hydrogen and silicon hydride are mixed to form quantum dots of the silicon nanocrystal material.
  • the step of forming the first electrode, the quantum dot luminescent layer and the second electrode is a solution processing method.
  • the forming the first electrode, the quantum dot luminescent layer and the second electrode comprises: depositing a first electrode material solution to form the first electrode; depositing a quantum dot solution to form the quantum dot luminescent layer; and depositing a second An electrode material solution forms the second electrode.
  • the active light-emitting display panel can be realized.
  • the uniformity of light of different illuminating colors enhances the display taste and the user's visual experience.
  • FIG. 1 is a schematic structural view of a display panel according to an embodiment of the present application.
  • FIG. 2 is a schematic structural view of a mesoporous frame according to an embodiment of the present application.
  • FIG. 3 is a schematic cross-sectional view of a mesoporous frame according to an embodiment of the present application.
  • FIG. 4 is a schematic view showing changes of nanocrystals in the embodiment of the present application.
  • FIG. 5 is a schematic diagram of assembling a regular nanocrystal using a host-guest self-assembled molecular stencil according to an embodiment of the present application
  • FIG. 6 is a schematic view of a self-assembled mesoporous silica frame technology according to an embodiment of the present application
  • FIG. 7 is a schematic diagram of a method for fabricating a display panel according to an embodiment of the present application.
  • FIG. 8 is a schematic diagram of a method of fabricating a quantum dot luminescent layer according to an embodiment of the present application.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • a plurality means two or more unless otherwise stated.
  • the term “comprises” and its variations are intended to cover a non-exclusive inclusion.
  • connection In the description of the present application, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise specifically defined and defined. Connected, or connected integrally; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be internal to both components Connected.
  • Connected, or connected integrally can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be internal to both components Connected.
  • the specific meanings of the above terms in the present application can be understood in the specific circumstances for those skilled in the art.
  • the display panel includes: a substrate 11 and a light emitting diode, the light emitting diode is formed on the substrate 11; the light emitting diode includes a first electrode a quantum dot luminescent layer and a second electrode; the first electrode, the quantum dot luminescent layer and the second electrode are sequentially stacked, the quantum dot luminescent layer comprises a mesoporous frame; In the assembled form, the mesoporous frame is used as a host material, and quantum dots 20 are disposed in the mesoporous frame.
  • quantum dots in the mesoporous frame By using quantum dots in the mesoporous frame, adjusting and controlling the size of the quantum dots and the uniformity of their arrangement, and adjusting the light-emitting diodes with different illuminating colors due to different quantum dot sizes, different illuminating colors in the active illuminating display panel can be realized.
  • the uniformity of light control improves the display taste and the user's visual experience.
  • the display panel includes: a substrate 11 and a light emitting diode, the light emitting diode is formed on the substrate 11; the light emitting diode includes a first An electrode, a quantum dot luminescent layer, and a second electrode; the first electrode, the quantum dot luminescent layer and the second electrode are sequentially stacked, the quantum dot luminescent layer comprises a mesoporous frame; In a self-assembled form, the mesoporous frame is used as a host material, and quantum dots 20 are disposed in the mesoporous frame.
  • the display panel includes an active switch 12 disposed between the substrate 11 and the light emitting diode; the display panel includes a vacuum layer 17 and a sealing portion 21, and the sealing portion 21 Illumination
  • the diode acts to form the vacuum layer 17, which is disposed on the light emitting diode.
  • a hole is disposed in the mesoporous frame, and an organic molecular stencil 19 is disposed in the hole, and a slit is disposed between the organic molecular stencil 19 and an inner wall of the hole; the quantum dot 20 is disposed in the slit .
  • the organic molecular stencil has a good shaping effect, and the quantum dots can be more evenly dispersed in the gap between the organic molecular stencil and the inner wall of the hole.
  • the radius of the quantum dot is less than or equal to the exciton Bohr radius.
  • Quantum dots have a very significant quantum confinement effect because the radius is less than or equal to the exciton Bohr radius of the material.
  • quantum dots with small physical dimensions since the movement of carriers in all directions is limited, the original continuous band structure will become a quasi-discrete energy level, which will increase the effective band gap of the material and then radiate Photons with higher energy and shorter wavelengths. It is not difficult to see that for the quantum dots of the same material, as the physical size shrinks, the emission spectrum can realize the transition from red to blue, which also creates the most striking feature of quantum dots - spectrally adjustable Sex.
  • the quantum dot emission spectrum has a narrow half-width and good color purity and color saturation.
  • quantum dots are inorganic semiconductor materials with environmental stability that organic chromophores cannot.
  • the material of the quantum dot is formed by mixing an organic molecular stencil, hydrogen and silicon hydride to form a silicon nanocrystal material.
  • a light emitting diode is disposed on the light emitting layer 13 .
  • the light emitting layer 13 includes a first light emitting portion 14 , a second light emitting portion 15 , and a third light emitting portion 16 .
  • the third light emitting portion 16 can respectively emit red light, green light, and blue light.
  • the color of the light is not limited to this.
  • the active switch 12 can be used with a thin film transistor arrangement.
  • the illuminating process of the illuminating layer in the display panel applies a voltage across the illuminating layer; the current flows from the second electrode to the first electrode, and passes through the organic layer, that is, the quantum dot luminescent layer; the second electrode
  • the organic molecular emission layer outputs electrons; the first electrode absorbs electrons transmitted from the organic molecular conduction layer (this can be regarded as the first electrode outputs holes to the conduction layer, and the effects are equal); at the junction of the emission layer and the conduction layer
  • the electrons will combine with the holes; when the electrons encounter holes, they will fill the holes; when this process occurs, the electrons will release energy in the form of photons; the display panel emits light.
  • Electrons and holes are injected into the quantum dot luminescent layer through the electron transport layer and the hole transport layer, respectively, thereby forming exciton complex luminescence, which is a direct injection of electric charge, which can effectively weaken the photoluminescence process.
  • the energy loss is beneficial to the further improvement of luminous efficiency.
  • a solution process which is inexpensive and can be prepared in a large area can be utilized.
  • the display panel includes: a substrate 11 and a light emitting diode, the light emitting diode is formed on the substrate 11; the light emitting diode includes a first An electrode, a quantum dot luminescent layer, and a second electrode; the first electrode, the The quantum dot luminescent layer and the second electrode are sequentially stacked, the quantum dot luminescent layer comprises a mesoporous frame; the mesoporous frame adopts a self-assembled form, the mesoporous frame serves as a host material, and the mesoporous frame A quantum dot 20 is provided inside.
  • the display panel includes an active switch 12 disposed between the substrate 11 and the light emitting diode; the display panel includes a vacuum layer 17 and a sealing portion 21, and the sealing portion 21 The light-emitting diode acts to form the vacuum layer 17, which is disposed on the light-emitting diode.
  • a hole is disposed in the mesoporous frame, and an organic molecular stencil 19 is disposed in the hole, and a slit is disposed between the organic molecular stencil 19 and an inner wall of the hole; the quantum dot 20 is disposed in the slit .
  • the mesoporous frame is a self-assembled mesoporous silica frame 18.
  • the use of a pore structure facilitates the implementation of a self-assembled molecular stencil solution oxide.
  • the self-assembled mesoporous silica frame has a specific pore structure, has a hollow, a small density, and a large specific surface area, and thus has unique permeability, screening molecular ability, optical properties, and adsorption, and can significantly improve channel characteristics.
  • the self-assembled mesoporous silica frame comprises a plurality of cylindrical holes extending through the self-assembled mesoporous silica frame 18, the holes being cylindrical as shown in Figure 2, or polygonal as shown in Figures 3 and 5.
  • the holes are arranged in a hexagonal shape, and the hexagonal regular arrangement can form a honeycomb-like structure with good stability.
  • Different manufacturing processes and product requirements can produce different shapes of hole structures, and therefore, various shapes of hole structures are within the scope of the present embodiment.
  • the inner wall of the hole is a silica pore wall 24.
  • the pores have a diameter of 2-10 nm.
  • the organic molecular stencil adopts a hollow structure so that the nanocrystals 23 can be more uniformly mixed with the self-assembled mesoporous silica frame 18 to improve electrical conductivity.
  • the organic molecular stencil has a good shaping effect, and the quantum dots can be more evenly dispersed in the gap between the organic molecular stencil and the inner wall of the hole.
  • the radius of the quantum dot is less than or equal to the exciton Bohr radius.
  • Quantum dots have a very significant quantum confinement effect because the radius is less than or equal to the exciton Bohr radius of the material.
  • quantum dots with small physical dimensions since the movement of carriers in all directions is limited, the original continuous band structure will become a quasi-discrete energy level, which will increase the effective band gap of the material and then radiate Photons with higher energy and shorter wavelengths.
  • quantum dots are inorganic semiconductor materials with environmental stability that organic chromophores cannot.
  • the material of the quantum dot is formed by mixing an organic molecular stencil, hydrogen and silicon hydride to form a silicon nanocrystal material.
  • the self-assembled mesoporous silica frame is used as the main body, and thereby the pores of the regular arrangement of 2-10 nm can be adjusted and controlled, thereby controlling the size of the quantum dots and the uniformity of the arrangement thereof.
  • a light emitting diode is disposed on the light emitting layer 13 .
  • the light emitting layer 13 includes a first light emitting portion 14 , a second light emitting portion 15 , and a third light emitting portion 16 .
  • the third light emitting portion 16 can respectively emit red light, green light, and blue light.
  • the color of the light is not limited to this.
  • the active switch 12 can be used with a thin film transistor arrangement.
  • the illuminating process of the illuminating layer in the display panel applies a voltage across the illuminating layer; the current flows from the second electrode to the first electrode, and passes through the organic layer, that is, the quantum dot luminescent layer; the second electrode
  • the organic molecular emission layer outputs electrons; the first electrode absorbs electrons transmitted from the organic molecular conduction layer (this can be regarded as the first electrode outputs holes to the conduction layer, and the effects are equal); at the junction of the emission layer and the conduction layer
  • the electrons will combine with the holes; when the electrons encounter holes, they will fill the holes; when this process occurs, the electrons will release energy in the form of photons; the display panel emits light.
  • Electrons and holes are injected into the quantum dot luminescent layer through the electron transport layer and the hole transport layer, respectively, thereby forming exciton complex luminescence, which is a direct injection of electric charge, which can effectively weaken the photoluminescence process.
  • the energy loss is beneficial to the further improvement of luminous efficiency.
  • a solution process which is inexpensive and can be prepared in a large area can be utilized.
  • the light emitting diode includes a first electrode, a quantum dot light emitting layer, and a second electrode
  • the process of the display panel includes a process step of the light emitting layer:
  • the quantum dot light emitting layer includes a mesoporous frame; quantum dots are disposed in the mesoporous frame.
  • quantum dots are disposed in the mesoporous frame.
  • the process further includes depositing a hole transport layer and an electron transport layer by solution processing, the hole transport layer being disposed between the first electrode (bottom electrode) and the quantum dot light-emitting layer, the electron transport A layer is disposed between the quantum dot light emitting layer and the second electrode (top electrode).
  • Deposition is achieved by solution processing including, but not limited to, spin coating, ink jet printing, screen printing, pulling or ink jetting.
  • solution processing including, but not limited to, spin coating, ink jet printing, screen printing, pulling or ink jetting.
  • vacuum deposition or vacuum thermal evaporation the organic molecules in the vacuum chamber are slightly heated, and then these molecules are condensed on the lower temperature base layer in the form of a film.
  • the concentration of the surfactant of the nanocrystal in the quantum dot solution is adjusted to change the size of the quantum dot
  • the temperature of the quantum dot solution is adjusted to change the size of the quantum dot.
  • the abscissa is the surfactant concentration of the nanocrystals (the weight percent) 29, and the ordinate is the temperature of 30 degrees Celsius, wherein the curve sequentially undergoes the micellar phase 32, the hexagonal liquid crystal state. (hexagonal liquid crystal) 33, cubic shape 34 and lamellar liquid crystal 35.
  • the general process forming a micelle; forming a micelle into a micelle rod; arranging the micelle rods in a hexagonal array to form a hexagonal array; forming a hexagonal array according to an organic molecular template self-assembly mechanism to form a middle layer of the template;
  • the stencil is removed to form a silica frame.
  • the hexagonal array composed of the micelle rod is used as a template, and the mold version is both a setting agent and a stabilizer, and the desired structure and structure can be realized by changing the shape and size thereof; in addition, the experimental device is simple and easy to operate. And the micelle rod can be reused, reducing waste, helping to reduce costs and reduce environmental pollution.
  • the inorganic fragrance Si(OR) 4 is converted into Si(OR) 3 Si-OH by a sol-gel method, and on the other hand, the surfactant micelles 25 are arranged into a hexagonal matrix by a self-assembly technique.
  • the micellar and hexagonal matrix Si (OR) 26 via a 3 Si-OH collaborative assembly self assembling techniques organic / inorganic hybrid material of the microstructure 27 is formed, and 28 are formed by mesoporous dried and calcined.
  • the display device includes a backlight module and a display panel as described above.
  • the backlight module includes a polarizer 22 disposed outside the substrate.
  • the display panel includes: a substrate 11 and a light emitting diode, the light emitting diode is formed on the substrate 11; the light emitting diode comprises a first electrode, a quantum dot emitting layer and a second electrode; the first electrode, the The quantum dot light-emitting layer and the second electrode are sequentially stacked, and the quantum dot light-emitting layer includes a mesoporous frame; and the quantum dot 20 is disposed in the mesoporous frame.
  • the display panel includes an active switch 12 disposed between the substrate 11 and the light emitting diode; the display panel includes a vacuum layer 17 and a sealing portion 21, and the sealing portion 21 The light-emitting diode acts to form the vacuum layer 17, which is disposed on the light-emitting diode.
  • a hole is disposed in the mesoporous frame, and an organic molecular stencil 19 is disposed in the hole, and a slit is disposed between the organic molecular stencil 19 and an inner wall of the hole; the quantum dot 20 is disposed in the slit .
  • the organic molecular stencil has a good shaping effect, and the quantum dots can be more evenly dispersed in the gap between the organic molecular stencil and the inner wall of the hole.
  • the radius of the quantum dot is less than or equal to the exciton Bohr radius.
  • Quantum dots have a very significant quantum confinement effect because the radius is less than or equal to the exciton Bohr radius of the material.
  • the material of the quantum dot is formed by mixing an organic molecular stencil, hydrogen and silicon hydride to form a silicon nanocrystal material.
  • a light emitting diode is disposed on the light emitting layer 13 .
  • the light emitting layer 13 includes a first light emitting portion 14 , a second light emitting portion 15 , and a third light emitting portion 16 .
  • the third light emitting portion 16 can respectively emit red light, green light, and blue light.
  • the color of the light is not limited to this.
  • the active switch 12 can be used with a thin film transistor arrangement.
  • the illuminating process of the illuminating layer in the display panel applies a voltage across the illuminating layer; the current flows from the second electrode to the first electrode, and passes through the organic layer, that is, the quantum dot luminescent layer; the second electrode
  • the organic molecular emission layer outputs electrons; the first electrode absorbs electrons transmitted from the organic molecular conduction layer (this can be regarded as the first electrode outputs holes to the conduction layer, and the effects are equal); at the junction of the emission layer and the conduction layer
  • the electrons will combine with the holes; when the electrons encounter holes, they will fill the holes; when this process occurs, the electrons will release energy in the form of photons; the display panel emits light.
  • the holes are respectively injected into the quantum dot luminescent layer through the electron transport layer and the hole transport layer to form exciton complex luminescence, which is a direct injection of electric charge, which can effectively weaken the energy loss caused by photoluminescence. It is conducive to the further improvement of luminous efficiency. At the same time, a solution process which is inexpensive and can be prepared in a large area can be utilized.
  • the embodiment further discloses a manufacturing method of a display panel, where the manufacturing method includes:
  • Step S71 providing a substrate
  • Step S72 forming a first electrode on the substrate
  • Step S73 forming a quantum dot luminescent layer on the first electrode
  • Step S74 forming a second electrode on the quantum dot light emitting layer.
  • the steps of the quantum dot light emitting layer include:
  • Step S81 forming a mesoporous frame, wherein the mesoporous frame is provided with a hole;
  • Step S82 filling the hole with an organic molecular stencil, and forming a gap between the organic molecular stencil and the inner wall of the hole;
  • Step S83 injecting hydrogen into the gap
  • Step S84 injecting silicon hydride into the gap
  • Step S85 mixing the organic molecular template, hydrogen and silicon hydride to form quantum dots of the silicon nanocrystal material.
  • the material of the substrate may be glass, plastic or the like.
  • the display panel includes an Organic Light-Emitting Diodes (OLED) display panel, a Quantum Dot Light Emitting Diodes (QLED) display panel, and the like.
  • OLED Organic Light-Emitting Diodes
  • QLED Quantum Dot Light Emitting Diodes
  • the display panel of the present application may be a curved type panel.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种显示面板及其制造方法，显示面板包括基板（11）、主动开关（12）和形成于基板（11）上的发光二极管，主动开关（12）设置在基板（11）与发光二极管之间，发光二极管包括：第一电极、第二电极；量子点发光层：量子点发光层包括介孔框架，介孔框架采用自组装形式，介孔框架作为主体材料，介孔框架内设置有量子点（20）；第一电极、量子点发光层和第二电极依次层叠设置。由于利用介孔框架内设置量子点（20）,调整与控制量子点（20）的大小与其排布的均匀性，进而调节因量子点（20）大小不同而具有不同发光颜色的发光二极管,便能实现主动发光显示面板中不同发光颜色的光的调控均匀性，提升显示品味与用户的视觉体验。

Description

显示面板及其制造方法 技术领域
本申请涉及显示技术领域，更具体的说，涉及一种显示面板及其制造方法。
背景技术
液晶显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶面板及背光模组(backl ightmodule)。液晶面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，并在两片玻璃基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
其中，薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)由于具有低的功耗、优异的画面品质以及较高的生产良率等性能，目前已经逐渐占据了显示领域的主导地位。同样，薄膜晶体管液晶显示器包含液晶面板和背光模组，液晶面板包括彩膜基板(Color Filter Substrate，CF Substrate，也称彩色滤光片基板)和薄膜晶体管阵列基板(Thin Film Transistor Substrate，TFTSubstrate)，上述基板的相对内侧存在透明电极。两片基板之间夹一层液晶分子(LiquidCrystal，LC)。
然而TFT-LCD具有影像和色彩辨识度低等缺陷，显示技术领域创新速度迅速，视角更宽、对比度高、更加轻薄并可以主动发光的OLED进入显示技术竞争，然而，由于应用了大量的有机材料，OLED的可靠性问题成为一道难以逾越的鸿沟，居高不下的成本迫使OLED难以在大屏领域广泛应用。
发明内容
本申请所要解决的技术问题是提供一种发光颜色均匀的显示面板。
此外，本申请还提供一种显示装置。
本申请的目的是通过以下技术方案来实现的：
一种显示面板，所述显示面板包括基板、主动开关和形成于所述基板上的发光二极管，所述主动开关设置在所述基板与所述发光二极管之间， 所述发光二极管包括：第一电极、第二电极以及量子点发光层；所述量子点发光层包括介孔框架，所述介孔框架采用自组装形式，所述介孔框架作为主体材料，所述介孔框架内设置有量子点；所述第一电极、所述量子点发光层和所述第二电极依次层叠设置。
其中，所述介孔框架内设置有孔洞，所述量子点填充于所述孔洞内。有机分子模版有很好的定型效果，可以让量子点较为均匀地散布于有机分子模版与所述孔洞的内壁之间设置的缝隙内。
其中，所述量子点的半径小于或等于激子波尔半径。由于半径小于或等于材料的激子波尔半径，量子点有着非常显著的量子限域效应。在物理尺寸较小的量子点内，由于载流子在各方向上的运动都受到局限，原本连续的能带结构会变成准分立的能级，使得材料有效带隙增大，进而辐射出能量更高、波长更短的光子。不难看出，对于同一种材料的量子点，随着物理尺寸的不断缩小，其发射光谱就可以实现红光到蓝光的过渡，这也造就了量子点最引人注目的特性——光谱可调性。除此之外，量子点发射光谱半峰宽较窄，有着良好的色纯度和色饱和度。并且量子点是一种无机半导体材料，具有有机发色团无法企及的环境稳定性。
其中，所述量子点为硅纳米晶体。这里是量子点的一种材料选择。
其中，所述介孔框架为自组装介孔二氧化硅框架。此为一种具体的二氧化硅框架结构，采用孔洞结构方便采用自组装分子模版溶液氧化物的实施。
其中，所述孔洞的内壁为二氧化硅孔壁。这里是孔壁的一种材料选择。
其中，所述孔洞的直径大小为2-10纳米。此为一种较为优选的孔洞尺寸。
其中，所述显示面板包括真空层和密封部，所述密封部与所述发光二极管作用形成所述真空层，所述真空层设置在所述发光二极管上。这里是显示面板的具体结构组成。
根据本申请的又一个方面，本申请还公开了一种显示面板。
一种显示面板，所述显示面板包括基板、主动开关和形成于所述基板上的发光二极管，所述主动开关设置在所述基板与所述发光二极管之间，所述发光二极管包括：第一电极、第二电极以及量子点发光层；所述量子点发光层包括介孔框架，所述介孔框架采用自组装形式，所述介孔框架作 为主体材料，所述介孔框架内设置有量子点，所述介孔框架为自组装介孔二氧化硅框架；所述显示面板包括真空层和密封部，所述密封部与所述发光二极管作用形成所述真空层，所述真空层设置在所述发光二极管上；所述第一电极、所述量子点发光层和所述第二电极依次层叠设置；所述自组装介孔二氧化硅框架内设置有孔洞，所述孔洞的内壁为二氧化硅孔壁，所述孔洞的直径大小为2-10纳米，所述量子点填充于所述孔洞内；所述量子点的半径小于或等于激子波尔半径；所述量子点材料为硅纳米晶体。
根据本申请的又一个方面，本申请还公开了一种显示面板的制造方法。
一种显示面板的制造方法，所述制造方法包括：提供一基板；在所述基板上形成第一电极；在所述第一电极上形成量子点发光层；以及在所述量子点发光层上形成第二电极；所述在所述第一电极上形成量子点发光层的步骤包括：形成介孔框架，所述介孔框架采用自组装形式，所述介孔框架作为主体材料，所述介孔框架内设置有孔洞；在所述孔洞内填充有机分子模版，所述有机分子模版与所述孔洞内壁之间形成有缝隙；在所述缝隙内注入氢气；在所述缝隙内注入四氢化硅；以及所述有机分子模版、氢气和四氢化硅混合形成硅纳米晶体材料的量子点。
其中，所述形成第一电极、量子点发光层及第二电极的步驟是采用溶液加工方式。
其中，所述形成第一电极、量子点发光层及第二电极的步驟包括：沉积第一电极材料溶液形成所述第一电极；沉积量子点溶液形成所述量子点发光层；以及沉积第二电极材料溶液形成所述第二电极。
本申请由于利用介孔框架内设置量子点,调整与控制量子点的大小与其排布的均匀性，进而调节因量子点大小不同而具有不同发光颜色的发光二极管,便能实现主动发光显示面板中不同发光颜色的光的调控均匀性，提升显示品味与用户的视觉体验。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以 根据这些附图获得其他的附图。在附图中：
图1是本申请实施例显示面板的结构示意图；
图2是本申请实施例介孔框架的结构示意图；
图3是本申请实施例介孔框架的截面示意图；
图4是本申请实施例纳米晶体的变化示意图；
图5是本申请实施例采用主体-客体自组装分子模版组装规则纳米晶体示意图；
图6是本申请实施例自组装介孔二氧化硅框架技术示意图；
图7是本申请实施例显示面板的制作方法示意图；以及
图8是本申请实施例量子点发光层的制作方法示意图。
具体实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的 连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和较佳的实施例对本申请作进一步详细说明。
下面参考图1至图6描述本申请实施例的显示面板结构示意图。
作为本申请的一个实施例，如图1-3、5所示，所述显示面板包括：基板11以及发光二极管，所述发光二极管形成于所述基板11上；所述发光二极管包括第一电极、量子点发光层以及第二电极；所述第一电极、所述量子点发光层和所述第二电极依次层叠设置，所述量子点发光层包括介孔框架；所述介孔框架采用自组装形式，所述介孔框架作为主体材料，所述介孔框架内设置有量子点20。利用介孔框架内设置量子点，调整与控制量子点的大小与其排布的均匀性，进而调节因量子点大小不同而具有不同发光颜色的发光二极管，便能实现主动发光显示面板中不同发光颜色的光的调控均匀性，提升显示品味与用户的视觉体验。
作为本申请的又一个实施例，如图1-3、5所示，所述显示面板包括：基板11以及发光二极管，所述发光二极管形成于所述基板11上；所述发光二极管包括第一电极、量子点发光层以及第二电极；所述第一电极、所述量子点发光层和所述第二电极依次层叠设置，所述量子点发光层包括介孔框架；所述介孔框架采用自组装形式，所述介孔框架作为主体材料，所述介孔框架内设置有量子点20。利用介孔框架内设置量子点，调整与控制量子点的大小与其排布的均匀性，进而调节因量子点大小不同而具有不同发光颜色的发光二极管，便能实现主动发光显示面板中不同发光颜色的光的调控均匀性，提升显示品味与用户的视觉体验。其中，所述显示面板包括主动开关12，所述主动开关12设置在所述基板11与所述发光二极管之间；所述显示面板包括真空层17和密封部21，所述密封部21与所述发光 二极管作用形成所述真空层17，所述真空层17设置在所述发光二极管上。
所述介孔框架内设置有孔洞，所述孔洞内设置有有机分子模版19，所述有机分子模版19与所述孔洞的内壁之间设置有缝隙；所述缝隙内设置有所述量子点20。有机分子模版有很好的定型效果，可以让量子点较为均匀地散布于有机分子模版与所述孔洞的内壁之间设置的缝隙内。其中，所述量子点的半径小于或等于激子波尔半径。由于半径小于或等于材料的激子波尔半径，量子点有着非常显著的量子限域效应。在物理尺寸较小的量子点内，由于载流子在各方向上的运动都受到局限，原本连续的能带结构会变成准分立的能级，使得材料有效带隙增大，进而辐射出能量更高、波长更短的光子。不难看出，对于同一种材料的量子点，随着物理尺寸的不断缩小，其发射光谱就可以实现红光到蓝光的过渡，这也造就了量子点最引人注目的特性——光谱可调性。除此之外，量子点发射光谱半峰宽较窄，有着良好的色纯度和色饱和度。并且量子点是一种无机半导体材料，具有有机发色团无法企及的环境稳定性。所述量子点的材料是由有机分子模版、氢气和四氢化硅混合形成硅纳米晶体材料。
如图1所示，发光二极管设置在发光层13上，所示发光层13包括第一发光部14、第二发光部15以及第三发光部16，第一发光部14、第二发光部15和第三发光部16可分别对应发出红光、绿光和蓝光。当然，发光颜色不限于此。主动开关12可采用薄膜晶体管设置使用。显示面板中的发光层的发光过程：显示面板的电池或电源会在发光层两端施加一个电压；电流从第二电极流向第一电极，并经过有机层即量子点发光层；第二电极向有机分子发射层输出电子；第一电极吸收从有机分子传导层传来的电子(这可以视为第一电极向传导层输出空穴，两者效果相等)；在发射层和传导层的交界处，电子会与空穴结合；电子遇到空穴时，会填充空穴；这一过程发生时，电子会以光子的形式释放能量；显示面板发光。电子和空穴分别通过电子传输层和空穴传输层注入到量子点发光层中，进而形成激子复合发光，这一过程即为电荷的直接注入，它可以有效地削弱光致发光过程中造成的能量损失，有利于发光效率的进一步提升。同时，可以利用成本低廉、可大面积制备的溶液法工艺。
作为本申请的又一个实施例，如图1-3、5所示，所述显示面板包括：基板11以及发光二极管，所述发光二极管形成于所述基板11上；所述发光二极管包括第一电极、量子点发光层以及第二电极；所述第一电极、所 述量子点发光层和所述第二电极依次层叠设置，所述量子点发光层包括介孔框架；所述介孔框架采用自组装形式，所述介孔框架作为主体材料，所述介孔框架内设置有量子点20。利用介孔框架内设置量子点，调整与控制量子点的大小与其排布的均匀性，进而调节因量子点大小不同而具有不同发光颜色的发光二极管，便能实现主动发光显示面板中不同发光颜色的光的调控均匀性，提升显示品味与用户的视觉体验。其中，所述显示面板包括主动开关12，所述主动开关12设置在所述基板11与所述发光二极管之间；所述显示面板包括真空层17和密封部21，所述密封部21与所述发光二极管作用形成所述真空层17，所述真空层17设置在所述发光二极管上。
所述介孔框架内设置有孔洞，所述孔洞内设置有有机分子模版19，所述有机分子模版19与所述孔洞的内壁之间设置有缝隙；所述缝隙内设置有所述量子点20。
所述介孔框架为自组装介孔二氧化硅框架18。采用孔洞结构方便采用自组装分子模版溶液氧化物的实施。自组装介孔二氧化硅框架有特定孔道结构，具有中空、密度小、比表面积大，因而具有独特的渗透性、筛分分子能力、光学性能和吸附性，能显著提升沟道特性。自组装介孔二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿自组装介孔二氧化硅框架18，孔洞可以是圆柱形如图2所示，也可以是多边形如图3、5所示，比如孔洞按六边形规则排布，六边形规则排布可以形成类蜂巢的结构，稳定性好。不同的制作工艺和产品要求可以制作出不同形状的孔洞结构，因此，各种形状的孔洞结构都在本实施方式构思范围内。所述孔洞的内壁为二氧化硅孔壁24。所述孔洞的直径大小为2-10纳米。有机分子模版采用镂空的结构，以便纳米晶体23可以较为均匀地与自组装介孔二氧化硅框架18混合，提高导电性能。
其中，有机分子模版有很好的定型效果，可以让量子点较为均匀地散布于有机分子模版与所述孔洞的内壁之间设置的缝隙内。所述量子点的半径小于或等于激子波尔半径。由于半径小于或等于材料的激子波尔半径，量子点有着非常显著的量子限域效应。在物理尺寸较小的量子点内，由于载流子在各方向上的运动都受到局限，原本连续的能带结构会变成准分立的能级，使得材料有效带隙增大，进而辐射出能量更高、波长更短的光子。不难看出，对于同一种材料的量子点，随着物理尺寸的不断缩小，其发射光谱就可以实现红光到蓝光的过渡，这也造就了量子点最引人注目的特性 ——光谱可调性。除此之外，量子点发射光谱半峰宽较窄，有着良好的色纯度和色饱和度。并且量子点是一种无机半导体材料，具有有机发色团无法企及的环境稳定性。所述量子点的材料是由有机分子模版、氢气和四氢化硅混合形成硅纳米晶体材料。这样利用自组装介孔二氧化硅框架为主体，并藉由此可调整与控制2-10nm规则性排列的孔洞，进而可以控制量子点的大小与其排布的均匀性。
如图1所示，发光二极管设置在发光层13上，所示发光层13包括第一发光部14、第二发光部15以及第三发光部16，第一发光部14、第二发光部15和第三发光部16可分别对应发出红光、绿光和蓝光。当然，发光颜色不限于此。主动开关12可采用薄膜晶体管设置使用。显示面板中的发光层的发光过程：显示面板的电池或电源会在发光层两端施加一个电压；电流从第二电极流向第一电极，并经过有机层即量子点发光层；第二电极向有机分子发射层输出电子；第一电极吸收从有机分子传导层传来的电子(这可以视为第一电极向传导层输出空穴，两者效果相等)；在发射层和传导层的交界处，电子会与空穴结合；电子遇到空穴时，会填充空穴；这一过程发生时，电子会以光子的形式释放能量；显示面板发光。电子和空穴分别通过电子传输层和空穴传输层注入到量子点发光层中，进而形成激子复合发光，这一过程即为电荷的直接注入，它可以有效地削弱光致发光过程中造成的能量损失，有利于发光效率的进一步提升。同时，可以利用成本低廉、可大面积制备的溶液法工艺。
作为本申请的又一个实施例，所述发光二极管包括第一电极、量子点发光层以及第二电极，显示面板的制程包括发光层的制程步骤：
提供所述第一电极、量子点发光层和第二电极的材料溶液：第一电极材料溶液、量子点溶液和第二电极材料溶液；
沉积所述第一电极材料溶液形成第一电极；
在所述第一电极上沉积所述量子点溶液形成量子点发光层；以及
在所述量子点发光层上沉积所述第二电极材料溶液形成第二电极。
所述量子点发光层包括介孔框架；所述介孔框架内设置有量子点。利用介孔框架内设置量子点，调整与控制量子点的大小与其排布的均匀性，进而调节因量子点大小不同而具有不同发光颜色的发光二极管，便能实现主动发光显示面板中不同发光颜色的光的调控均匀性，提升显示品味与用 户的视觉体验。
所述制程还包括采用溶液加工方式沉积空穴传输层和电子传输层，所述空穴传输层设置在所述第一电极(底电极)和所述量子点发光层之间，所述电子传输层设置在所述量子点发光层和所述第二电极(顶电极)之间。采用溶液加工的方式实现沉积，所述溶液加工方式包括但不限于旋转涂覆、喷墨打印、丝网印刷、提拉或喷墨。比如真空沉积或真空热蒸发，位于真空腔体内的有机物分子会被轻微加热，然后这些分子以薄膜的形式凝聚在温度较低的基层上。这一方法成本很高，但效率较低；有机气相沉积，在一个低压热壁反应腔内，载气将蒸发的有机物分子运送到低温基层上，然后有机物分子会凝聚成薄膜状。使用载气能提高效率，并降低显示面板的造价；喷墨打印，利用喷墨技术可将发光层喷洒到基层上，就像打印时墨水被喷洒到纸张上那样。喷墨技术大大降低了显示面板的生产成本，还能将发光层打印到表面积非常大的薄膜上，用以生产大型显示器，例如80英寸大屏幕电视或电子看板。
如图4所示，调整在所述量子点溶液中所述纳米晶体的表面活性剂的浓度以改变所述量子点的大小，调整所述量子点溶液的温度以改变所述量子点的大小。其中，横坐标为纳米晶体的表面活性剂的浓度(surfactant concentration，单位为weight percent)29，纵坐标是摄氏温度30，当中曲线依次经历胶束阶段(micellar phases)32、六边形液体晶体状态(hexagonal liquid crystal)33、立方体形状(cubic)34及层状液体晶体状态(lamellar liquid crystal)35。大致过程：形成胶束；将胶束形成胶束棒；将胶束棒按六角形排列形成六角形阵列；将六角形阵列根据有机分子模版自组装机制形成模版中间组；将模版中间组培烧去除模版形成二氧化硅框架。利用胶束棒组成的六角形阵列作为模版，模版本身既是定型剂，又是稳定剂，通过改变其形状和尺寸可以实现对材料结构的预期调控；此外，实验装置简单、操作容易。且胶束棒可以重复利用，减少浪费，有利于降低成本和减少环境污染。
如图6所示，采用溶胶-凝胶法将无机香料Si(OR)4转换成Si(OR)3Si-OH，另一方面，将表面活性剂胶束25通过自组装技术排列成六角矩阵26，将六角矩阵26的胶束和Si(OR)3Si-OH通过协同装配技术自组 装，形成有机/无机混杂的微结构材料27，然后通过干燥和煅烧形成介孔材料28。
作为本申请的又一个实施例，显示装置包括包括背光模组和如上所述的显示面板，如图1所示，所述背光模组包括设置在所述基板外侧的偏光片22。所述显示面板包括：基板11以及发光二极管，所述发光二极管形成于所述基板11上；所述发光二极管包括第一电极、量子点发光层以及第二电极；所述第一电极、所述量子点发光层和所述第二电极依次层叠设置，所述量子点发光层包括介孔框架；所述介孔框架内设置有量子点20。利用介孔框架内设置量子点，调整与控制量子点的大小与其排布的均匀性，进而调节因量子点大小不同而具有不同发光颜色的发光二极管，便能实现主动发光显示面板中不同发光颜色的光的调控均匀性，提升显示品味与用户的视觉体验。其中，所述显示面板包括主动开关12，所述主动开关12设置在所述基板11与所述发光二极管之间；所述显示面板包括真空层17和密封部21，所述密封部21与所述发光二极管作用形成所述真空层17，所述真空层17设置在所述发光二极管上。所述介孔框架内设置有孔洞，所述孔洞内设置有有机分子模版19，所述有机分子模版19与所述孔洞的内壁之间设置有缝隙；所述缝隙内设置有所述量子点20。有机分子模版有很好的定型效果，可以让量子点较为均匀地散布于有机分子模版与所述孔洞的内壁之间设置的缝隙内。其中，所述量子点的半径小于或等于激子波尔半径。由于半径小于或等于材料的激子波尔半径，量子点有着非常显著的量子限域效应。所述量子点的材料是由有机分子模版、氢气和四氢化硅混合形成硅纳米晶体材料。
如图1所示，发光二极管设置在发光层13上，所示发光层13包括第一发光部14、第二发光部15以及第三发光部16，第一发光部14、第二发光部15和第三发光部16可分别对应发出红光、绿光和蓝光。当然，发光颜色不限于此。主动开关12可采用薄膜晶体管设置使用。显示面板中的发光层的发光过程：显示面板的电池或电源会在发光层两端施加一个电压；电流从第二电极流向第一电极，并经过有机层即量子点发光层；第二电极向有机分子发射层输出电子；第一电极吸收从有机分子传导层传来的电子(这可以视为第一电极向传导层输出空穴，两者效果相等)；在发射层和传导层的交界处，电子会与空穴结合；电子遇到空穴时，会填充空穴；这一过程发生时，电子会以光子的形式释放能量；显示面板发光。电子和空 穴分别通过电子传输层和空穴传输层注入到量子点发光层中，进而形成激子复合发光，这一过程即为电荷的直接注入，它可以有效地削弱光致发光过程中造成的能量损失，有利于发光效率的进一步提升。同时，可以利用成本低廉、可大面积制备的溶液法工艺。
参考图7，本实施方式还公开一种显示面板的制造方法，所述制造方法包括：
步骤S71：提供一基板；
步骤S72：在所述基板上形成第一电极；
步骤S73：在所述第一电极上形成量子点发光层；
步骤S74：在所述量子点发光层上形成第二电极。
参考图8，所述量子点发光层的步骤包括：
步骤S81：形成介孔框架，所述介孔框架内设置有孔洞；
步骤S82：在所述孔洞内填充有机分子模版，所述有机分子模版与孔洞内壁之间形成有缝隙；
步骤S83：在所述缝隙内注入氢气；
步骤S84：在所述缝隙内注入四氢化硅；
步骤S85：所述有机分子模版、氢气和四氢化硅混合形成硅纳米晶体材料的量子点。
需要说明的是，在上述实施例中，所述基板的材料可以选用玻璃、塑料等。
在上述实施例中，显示面板包括有机发光二极管(Organic Light-Emitting Diodes，OLED)显示面板、量子点发光二极管(Quantum Dot Light Emitting Diodes，QLED)显示面板等。
在上述实施例中，本申请的显示面板可为曲面型面板。
以上内容是结合具体的实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (15)

  1. 一种显示面板，包括基板、主动开关和形成于所述基板上的发光二极管，所述主动开关设置在所述基板与所述发光二极管之间，所述发光二极管包括：
    第一电极、第二电极；以及
    量子点发光层：所述量子点发光层包括介孔框架，所述介孔框架采用自组装形式，所述介孔框架作为主体材料，所述介孔框架内设置有量子点；
    所述第一电极、所述量子点发光层和所述第二电极依次层叠设置。
  2. 如权利要求1所述的显示面板，其中，所述介孔框架内设置有孔洞，所述量子点填充于所述孔洞内。
  3. 如权利要求2所述的显示面板，其中，所述量子点的半径小于或等于激子波尔半径。
  4. 如权利要求2所述的显示面板，其中，所述量子点为硅纳米晶体。
  5. 如权利要求2所述的显示面板，其中，所述介孔框架为自组装介孔二氧化硅框架。
  6. 如权利要求2所述的显示面板，其中，所述孔洞的内壁为二氧化硅孔壁。
  7. 如权利要求2所述的显示面板，其中，所述孔洞的直径大小为2-10纳米。
  8. 如权利要求1所述的显示面板，其中，所述显示面板包括真空层和密封部，所述密封部与所述发光二极管作用形成所述真空层，所述真空层设置在所述发光二极管上。
  9. 一种显示面板，包括基板、主动开关和形成于所述基板上的发光二极管，所述主动开关设置在所述基板与所述发光二极管之间，所述发光二极管包括：
    第一电极、第二电极；以及
    量子点发光层：所述量子点发光层包括介孔框架，所述介孔框架采用自组装形式，所述介孔框架作为主体材料，所述介孔框架内设置有量子点，所述介孔框架为自组装介孔二氧化硅框架；
    所述显示面板包括真空层和密封部，所述密封部与所述发光二极管作用形成所述真空层，所述真空层设置在所述发光二极管上；
    所述第一电极、所述量子点发光层和所述第二电极依次层叠设置；
    所述自组装介孔二氧化硅框架内设置有孔洞，所述孔洞的内壁为二氧化硅孔壁，所述孔洞的直径大小为2-10纳米，所述量子点填充于所述孔洞内；
    所述量子点的半径小于或等于激子波尔半径；
    所述量子点材料为硅纳米晶体。
  10. 一种显示面板的制造方法，包括：
    提供一基板；
    在所述基板上形成第一电极；
    在所述第一电极上形成量子点发光层；以及
    在所述量子点发光层上形成第二电极；
    所述在所述第一电极上形成量子点发光层的步骤包括：
    形成介孔框架，所述介孔框架采用自组装形式，所述介孔框架作为主体材料，所述介孔框架内设置有孔洞；
    在所述孔洞内填充有机分子模版，所述有机分子模版与所述孔洞内壁之间形成有缝隙；
    在所述缝隙内注入氢气；
    在所述缝隙内注入四氢化硅；以及
    所述有机分子模版、氢气和四氢化硅混合形成硅纳米晶体材料的量子点。
  11. 如权利要求10所述的显示面板的制造方法，其中，所述形成第一电极、量子点发光层及第二电极的步驟是采用溶液加工方式。
  12. 如权利要求11所述的显示面板的制造方法，其中，所述形成第一电极、量子点发光层及第二电极的步驟包括：
    沉积第一电极材料溶液形成所述第一电极；
    沉积量子点溶液形成所述量子点发光层；以及
    沉积第二电极材料溶液形成所述第二电极。
  13. 如权利要求10所述的显示面板的制造方法，其中，所述量子点的半径小于或等于激子波尔半径。
  14. 如权利要求10所述的显示面板的制造方法，其中，所述孔洞的直径大小为2-10纳米。
  15. 如权利要求10所述的显示面板的制造方法，其中，所述显示面板包括真空层和密封部，所述密封部与所述发光二极管作用形成所述真空层，所述真空层设置在所述发光二极管上。
PCT/CN2017/102603 2017-08-08 2017-09-21 显示面板及其制造方法 WO2019028973A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/637,537 US11201305B2 (en) 2017-08-08 2017-09-21 Display panel and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710669330.3A CN107689388B (zh) 2017-08-08 2017-08-08 一种显示面板及其制造方法
CN201710669330.3 2017-08-08

Publications (1)

Publication Number Publication Date
WO2019028973A1 true WO2019028973A1 (zh) 2019-02-14

Family

ID=61153245

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/102603 WO2019028973A1 (zh) 2017-08-08 2017-09-21 显示面板及其制造方法

Country Status (3)

Country Link
US (1) US11201305B2 (zh)
CN (1) CN107689388B (zh)
WO (1) WO2019028973A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114551693A (zh) * 2022-02-21 2022-05-27 东莞市中麒光电技术有限公司 量子点高效填充方法、光色转换结构及发光芯片

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109585504B (zh) 2018-10-08 2020-12-25 惠科股份有限公司 显示面板及显示面板的制作方法
CN111200066B (zh) * 2018-11-16 2021-06-22 Tcl科技集团股份有限公司 一种量子点发光二极管及其制备方法
CN109585666A (zh) 2018-12-04 2019-04-05 惠科股份有限公司 一种显示面板、显示面板的制造方法和显示装置
CN109742207A (zh) * 2018-12-29 2019-05-10 佛山市柔浩电子有限公司 微发光二极管量子点基板结构
CN109705853B (zh) * 2019-03-01 2022-04-22 惠科股份有限公司 量子点层及其制备方法
CN109669301A (zh) * 2019-03-01 2019-04-23 惠科股份有限公司 量子点彩膜基板和显示装置
CN109860263A (zh) * 2019-03-01 2019-06-07 惠科股份有限公司 显示面板和显示装置
CN111129333B (zh) * 2019-12-30 2022-08-19 广东聚华印刷显示技术有限公司 Qled器件、显示装置及qled器件的制备方法
CN112635515B (zh) * 2021-01-20 2022-08-16 中国科学院长春光学精密机械与物理研究所 基于量子点色转换层的MicroLED显示器件及其制备方法
CN113125005A (zh) * 2021-03-22 2021-07-16 北海惠科光电技术有限公司 一种光电感应装置和光电系统
CN114410305A (zh) * 2022-01-13 2022-04-29 深圳市华星光电半导体显示技术有限公司 复合材料薄膜、其制备方法以及显示面板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040016646A1 (en) * 2002-07-29 2004-01-29 Stucky Galen D. Electrochemical synthesis of mesoporous metal/metal oxide flims using a low percentage surfactant solution by cooperative templating mechanism
US20130303766A1 (en) * 2012-05-09 2013-11-14 Pusan National University Industry-University Cooperation Foundation Organic-Inorganic Hybrid Mesoporous Silica Material Modified by Sulfonic Acid Group for Selective Adsorption of Metal Ions and Method of Manufacturing the Same
CN105733556A (zh) * 2016-03-21 2016-07-06 天津市中环量子科技有限公司 一种量子点复合荧光颗粒、led模块
CN205643763U (zh) * 2016-03-30 2016-10-12 乐视控股（北京）有限公司 一种自发光导光板、背光模组及显示设备
CN106486510A (zh) * 2015-08-31 2017-03-08 乐金显示有限公司 量子点和包括量子点的量子点薄膜、led封装以及显示装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4537528B2 (ja) * 2000-03-29 2010-09-01 株式会社東芝 光記録媒体
WO2006035425A2 (en) * 2004-09-27 2006-04-06 Technion Research & Development Foundation Ltd. Spray method for producing semiconductor nanoparticles
US20080121955A1 (en) * 2006-11-28 2008-05-29 National Applied Research Laboratories Silicon-based ferroelectric memory material and memory
US8642527B2 (en) * 2007-06-18 2014-02-04 The Clorox Company Oxidizing bleach composition
US20090130422A1 (en) * 2007-11-19 2009-05-21 Martin Brett D Mesoporous monoliths containing conducting polymers
TW201032340A (en) * 2009-02-26 2010-09-01 Nat Applied Res Laboratories A silicon quantum dot near-infrared phototransistor detector
US8840816B2 (en) * 2010-07-01 2014-09-23 GM Global Technology Operations LLC Making nanocrystalline mesoporous spherical particles
KR101852924B1 (ko) * 2011-11-04 2018-04-30 삼성전자주식회사 혼성 다공성 구조체, 이를 포함하는 분리막 및 혼성 다공성 구조체의 제조 방법
US20130281315A1 (en) * 2012-04-24 2013-10-24 The University Of North Carolina At Greensboro Enhancing surface plasmon resonance imaging signal
KR102177074B1 (ko) * 2013-03-20 2020-11-11 루미리즈 홀딩 비.브이. 캡슐화된 다공성 입자 내 양자점
KR102132220B1 (ko) * 2013-12-27 2020-07-10 삼성디스플레이 주식회사 양자점 광학 소자의 제조 방법 및 양자점 광학 소자를 포함한 백라이트 유닛
JP6425921B2 (ja) * 2014-06-12 2018-11-21 株式会社ジャパンディスプレイ 画像表示装置
US20160122186A1 (en) * 2014-07-31 2016-05-05 Fraunhofer Usa, Inc. Mesoporous carbon material and related methods
US20160129388A1 (en) * 2014-10-03 2016-05-12 Fraunhofer Usa, Inc. Mesoporous aluminosilicate and methods of using the same
CN104993037B (zh) * 2015-05-27 2018-01-30 合肥鑫晟光电科技有限公司 一种发光二极管及其封装结构、封装方法和显示装置
CN104932136B (zh) * 2015-07-01 2018-01-26 合肥鑫晟光电科技有限公司 彩膜基板及其制作方法、显示面板和显示装置
US20180331312A1 (en) * 2015-11-04 2018-11-15 Guangzhou Chinaray Optoelectronic Materials Ltd. Electroluminescent device, preparation method thereof, and ink formulation
CN107017325B (zh) * 2015-11-30 2020-06-23 隆达电子股份有限公司 量子点复合材料及其制造方法与应用
WO2017116820A1 (en) * 2015-12-31 2017-07-06 3M Innovative Properties Company Curable quantum dot compositions and articles
US10192932B2 (en) * 2016-02-02 2019-01-29 Apple Inc. Quantum dot LED and OLED integration for high efficiency displays
CN105720176A (zh) * 2016-02-19 2016-06-29 京东方科技集团股份有限公司 一种胶囊量子点和发光二极管、制备方法及显示装置
KR102400321B1 (ko) * 2016-04-26 2022-05-20 소에이 가가쿠 고교 가부시키가이샤 양자점 재료 및 양자점 재료의 제조 방법
CN106876539B (zh) * 2017-02-17 2019-04-05 深圳市华星光电技术有限公司 石墨烯发光晶体管及其制作方法、主动石墨烯发光显示器
CN109585503B (zh) * 2018-10-08 2021-04-02 惠科股份有限公司 显示面板及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040016646A1 (en) * 2002-07-29 2004-01-29 Stucky Galen D. Electrochemical synthesis of mesoporous metal/metal oxide flims using a low percentage surfactant solution by cooperative templating mechanism
US20130303766A1 (en) * 2012-05-09 2013-11-14 Pusan National University Industry-University Cooperation Foundation Organic-Inorganic Hybrid Mesoporous Silica Material Modified by Sulfonic Acid Group for Selective Adsorption of Metal Ions and Method of Manufacturing the Same
CN106486510A (zh) * 2015-08-31 2017-03-08 乐金显示有限公司 量子点和包括量子点的量子点薄膜、led封装以及显示装置
CN105733556A (zh) * 2016-03-21 2016-07-06 天津市中环量子科技有限公司 一种量子点复合荧光颗粒、led模块
CN205643763U (zh) * 2016-03-30 2016-10-12 乐视控股（北京）有限公司 一种自发光导光板、背光模组及显示设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114551693A (zh) * 2022-02-21 2022-05-27 东莞市中麒光电技术有限公司 量子点高效填充方法、光色转换结构及发光芯片

Also Published As

Publication number Publication date
US20200259111A1 (en) 2020-08-13
CN107689388B (zh) 2020-08-18
US11201305B2 (en) 2021-12-14
CN107689388A (zh) 2018-02-13

Similar Documents

Publication Publication Date Title
WO2019028973A1 (zh) 显示面板及其制造方法
WO2019148746A1 (zh) 一种显示装置
WO2019148747A1 (zh) 一种显示面板和显示装置
CN105097878B (zh) 有机电致发光显示面板及制备方法、显示装置
WO2019148748A1 (zh) 一种显示面板和显示装置
CN105261635A (zh) 发光二极管像素排列结构、印刷型显示装置及制备方法
US20160293875A1 (en) Method for manufacturing quantum dot light-emitting element and display device using quantum dot
WO2014172951A1 (zh) 有机电致发光二极管显示装置
WO2017177516A1 (zh) Led显示屏的制造方法和led显示屏
US11489131B2 (en) Display panel and method of manufacturing thereof
WO2019047692A1 (zh) 显示面板和显示面板的制造方法
CN105261709A (zh) 一种掺杂量子点的有机发光器件及其制备方法
Li et al. 80‐1: Invited Paper: Developing AMQLED technology for display applications
CN106374056A (zh) Qled显示面板制造方法及qled显示器
Yin et al. Color-stable WRGB emission from blue OLEDs with quantum dots-based patterned down-conversion layer
Hu et al. 75‐4: Inkjet‐Printed Quantum Dot Display with Blue OLEDs for Next Generation Display
WO2019047691A1 (zh) 显示面板和显示面板的制程方法
KR20120112924A (ko) 블록 공중합체의 자기조립 기술을 이용한 차세대 디스플레이용 그래핀 양자점 제조 방법
WO2017206734A1 (zh) 发光单元及制作方法、显示面板及电子装置
US20210355338A1 (en) Quantum dot ink, method of manufacturing display panel, and display panel
US11367847B2 (en) Display panel, display device and manufacturing method
WO2014008720A1 (zh) 有机显示器件及制作的方法
JP5059628B2 (ja) 半導体装置
WO2020098035A1 (zh) 显示面板及显示装置
Kawamura et al. High-color-purity microfluidic quantum dots light-emitting diodes using the electroluminescence of the liquid organic semiconductor backlight

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17920905

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 26.05.2020))

122 Ep: pct application non-entry in european phase

Ref document number: 17920905

Country of ref document: EP

Kind code of ref document: A1