WO2017177516A1 - Led显示屏的制造方法和led显示屏 - Google Patents

Led显示屏的制造方法和led显示屏 Download PDF

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WO2017177516A1
WO2017177516A1 PCT/CN2016/083559 CN2016083559W WO2017177516A1 WO 2017177516 A1 WO2017177516 A1 WO 2017177516A1 CN 2016083559 W CN2016083559 W CN 2016083559W WO 2017177516 A1 WO2017177516 A1 WO 2017177516A1
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layer
led display
electrode
cathode
anode
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PCT/CN2016/083559
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English (en)
French (fr)
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徐超
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深圳市华星光电技术有限公司
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Priority to US15/109,404 priority Critical patent/US20180108871A1/en
Publication of WO2017177516A1 publication Critical patent/WO2017177516A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer

Definitions

  • the invention relates to the field of quantum dot light emitting diodes, and in particular to a method for manufacturing an LED display screen and an LED display screen.
  • a quantum dot is a nanoparticle composed of a group II-VI, III-V or IV-VI element that emits light upon excitation.
  • the wavelength of the quantum dots is related to the size of the quantum dot particles, so that visible light of various ideal wavelengths can be generated by controlling the size of the quantum dots.
  • the quantum dot luminescent material has the advantages of high light color purity, high luminescence quantum efficiency and long service life, and is a promising electroluminescent material.
  • the quantum dot electroluminescent display is similar to the organic electroluminescent display (OLED) in that it uses a sandwich-like laminate structure.
  • the QLED light-emitting layer uses quantum dots instead of the organic light-emitting materials in the OLED, and overcomes the shortcomings of the organic light-emitting materials that are sensitive to water oxygen and poor stability.
  • the methods for preparing QLED include spin coating, inkjet printing, and contact transfer.
  • the best way to prepare a full-color QLED device is to use inkjet printing technology.
  • the disadvantages of the method for preparing QLED by inkjet printing are as follows: (1) requiring one photolithography to form a pixel groove, and the cost is high; (2) the anode conductivity of the printing is not high, and the luminescent property of the device is poor.
  • the invention provides a method for manufacturing an LED display screen and an LED display screen, which can simplify the manufacturing process, reduce the production cost, and effectively improve the product yield.
  • the invention provides a method for manufacturing an LED display screen, comprising: forming a first electrode on a substrate; forming a functional layer on the first electrode; and moving away from the first layer in the functional layer by nanoimprinting a groove is formed on a surface of the electrode; a luminescent solution is filled in the groove to form an organic luminescent layer; and a second electrode is formed on the organic luminescent layer.
  • the first electrode is an anode
  • the functional layer is a hole transport layer
  • the second electrode is a cathode
  • the first electrode is a cathode
  • the functional layer is a hole blocking layer
  • the second electrode is an anode
  • the first electrode is a cathode
  • the functional layer is an electron transport layer
  • the second electrode is an anode
  • the luminescent solution is a red green blue quantum dot solution.
  • the red green blue amount electron solution is made of a hydrophobic material, and the functional layer is made of a hydrophilic material.
  • the anode is made of a high conductivity material comprising indium tin oxide or silver.
  • the present invention also provides an LED display screen comprising a first electrode formed on a substrate; a functional layer formed on the first electrode; and an organic light emitting layer deviated from the first layer by the functional layer A groove in which a surface is formed by nanoimprinting on a surface of the electrode is filled with a luminescent solution; and a second electrode formed on the organic luminescent layer.
  • the first electrode is an anode
  • the functional layer is a hole transport layer
  • the second electrode is a cathode
  • the first electrode is a cathode
  • the functional layer is a hole blocking layer
  • the second electrode is an anode
  • the first electrode is a cathode
  • the functional layer is an electron transport layer
  • the second electrode is anode
  • the luminescent solution is a red green blue quantum dot solution.
  • the red green blue amount electron solution is made of a hydrophobic material, and the functional layer is made of a hydrophilic material.
  • the anode is made of a high conductivity material comprising indium tin oxide or silver.
  • a hole blocking layer formed between the organic light emitting layer and the cathode and/or an electron transport layer formed between the hole blocking layer and the cathode is further included.
  • an electron transport layer formed between the cathode and the hole blocking layer and/or a hole transport layer formed between the organic light emitting layer and the anode are further included.
  • a hole transport layer formed between the organic light-emitting layer and the anode is further included.
  • the present invention fills a luminescent solution in a preset groove formed by one-time molding using a nano embossing technique, thereby forming an organic luminescent layer, which does not need to be coated, exposed, developed, etc.
  • the engraving process simplifies the manufacturing process, reduces the production cost, and can effectively improve the product yield.
  • FIG. 1 is a schematic cross-sectional view of an LED display screen in accordance with a first embodiment of the present invention
  • FIG. 2 is a schematic view of a groove on a hole transport layer of an LED display panel according to the present invention
  • Figure 3 is a schematic cross-sectional view of an LED display screen in accordance with a second embodiment of the present invention.
  • Figure 4 is a schematic cross-sectional view of an LED display screen in accordance with a third embodiment of the present invention.
  • 5a to 5g are schematic cross-sectional views showing a manufacturing process of an LED display panel according to a first embodiment of the present invention.
  • an LED (Light Emitting Diode) display screen 100 includes a substrate 101, an anode 102, a hole transport layer 103, an organic light emitting layer 104, and an empty layer.
  • the surface of the hole transport layer 103 away from the anode 102 is formed until the recess is full to form the recess 1031 formed by the nanoimprint method, and the luminescent solution is dropped into the recess 1031 to form the organic light-emitting layer 104.
  • the substrate 101 is generally made of glass.
  • the luminescent solution is preferably a red R, green G, and blue B quantum dot solution
  • the display screen 100 is a quantum dot light emitting diode (QLED) display screen having a wide color gamut, high color purity, low energy consumption, Low cost and good stability.
  • the anode 102 is preferably made of a high conductivity material such as indium tin oxide or silver, which prevents the conductivity of the anode from being low and affects the luminescent properties of the display panel 100.
  • FIG. 2 there is shown a schematic view of a recess 1031 in a hole transport layer 103 of an LED display screen in accordance with the present invention, the recess 1031 being formed by nanoimprinting, in particular, the recess 1031 has a nanopattern
  • the template is embossed on the hole transport layer 103 in equal proportions.
  • the red green blue quantum dot solution is made of a hydrophobic material
  • the hole transport layer 103 is made of a hydrophilic material such as poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT). :PSS) aqueous solution, etc., due to the repulsion between the hydrophobic material and the hydrophilic material, the quantum dot solution in the adjacent grooves will be prevented from mixing with each other, thereby improving the product yield.
  • a hydrophilic material such as poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT). :PSS) aqueous solution, etc.
  • the function of the transport layer 103 and the electron transport layer 106 is to achieve directional controllable migration of holes or electrons to improve the luminous efficiency of the display screen 100.
  • the hole blocking layer 105 can restrict the migration of holes injected by the anode 102, balance the carriers, and prevent holes from being injected into the cathode to constitute a leak current.
  • the stacking positions of the hole blocking layer 105 and/or the electron transport layer 106 in the LED display panel 100 may be interchanged without affecting the performance of the LED display screen 100. Further, the hole blocking layer 105 and/or the electron transport layer 106 in the LED display panel 100 may be omitted.
  • an LED (Light Emitting Diode) display 200 includes a substrate 201, a cathode 202, an electron transport layer 203, a hole blocking layer 204, and an organic layer.
  • the surface of the hole blocking layer 204 away from the cathode 202 is formed until the filling is completed to form the groove 2041 formed by the nanoimprinting method, and the luminescent solution is dropped into the groove 2041 until the filling is completed to form the organic light emitting layer.
  • the substrate 201 is generally made of glass.
  • the luminescent solution is preferably a red R, green G, and blue B quantum dot solution
  • the display screen 200 is a quantum dot light emitting diode (QLED) display screen having a wide color gamut, high color purity, low energy consumption, Low cost and good stability.
  • the anode 207 is preferably made of a high conductivity material such as indium tin oxide (ITO) or silver, which prevents the conductivity of the anode from being low and affects the luminescent properties of the display panel 200.
  • the red green blue quantum dot solution is made of a hydrophobic material
  • the hole blocking layer 204 is made of a hydrophilic material, which will avoid adjacent due to the repulsion between the hydrophobic material and the hydrophilic material.
  • the quantum dot solutions in the grooves are mixed with each other to improve product yield.
  • the role of the hole transport layer 206 and the electron transport layer 203 is to achieve directional controllable migration of holes or electrons to improve the luminous efficiency of the display screen 200.
  • the hole blocking layer 204 can restrict the migration of holes injected by the anode 202, balance the carriers, and prevent holes from being injected into the cathode to constitute a leak current.
  • the LED display screen 200 is not affected.
  • the hole transport layer 206 and/or the electron transport layer 203 in the LED display 200 may be omitted on the premise of performance.
  • an LED (Light Emitting Diode) display 300 includes a substrate 301, a cathode 302, a hole blocking layer 303, an electron transport layer 304, and an organic layer.
  • the surface of the electron transport layer 304 remote from the cathode 302 is formed with a recess 3041 formed by nanoimprinting, and the luminescent solution is dropped into the recess 3041 until it is filled to form the organic light-emitting layer 305.
  • the substrate 301 is generally made of glass.
  • the luminescent solution is preferably a red R, green G, and blue B quantum dot solution
  • the display screen 300 is a quantum dot light emitting diode (QLED) display screen having a wide color gamut, high color purity, and low energy consumption.
  • QLED quantum dot light emitting diode
  • the anode 307 is preferably made of a high conductivity material such as indium tin oxide or silver, which prevents the conductivity of the anode from being low and affects the light-emitting performance of the display panel 300.
  • the red green blue quantum dot solution is made of a hydrophobic material
  • the electron transport layer 304 is made of a hydrophilic material, which will avoid adjacent concave due to the repulsion between the hydrophobic material and the hydrophilic material.
  • the quantum dot solutions in the bath are mixed with each other to improve product yield.
  • the hole transport layer 306 and/or the hole blocking layer 303 in the LED display panel 300 may be omitted without affecting the performance of the LED display panel 300.
  • FIG. 5a to 5g are schematic cross-sectional views showing a manufacturing process of an LED display panel 100 according to a first embodiment of the present invention.
  • ITO indium tin oxide
  • An anode (Anode) 102 is prepared on the substrate 101 or by applying metal silver to the substrate 101 by evaporation; referring to FIG. 5b, in the second step, the anode 102 is prepared by spin coating.
  • Hole transport layer (HTL) 103, the hole transport layer 103 has a thickness of about 50 nm; referring to FIG.
  • nano-imprinting is used to press the surface of the hole transport layer 103 away from the anode 102.
  • a groove 1031 having a height of about 30 nm is printed, and the groove 1031 is embossed on the hole transport layer 103 by a template having a nano pattern, and the nanoimprint ratio is avoided by avoiding the use of an expensive light source and a projection optical system.
  • the conventional lithography method greatly reduces the cost and is not physically limited by the shortest exposure wavelength in optical lithography; referring to FIG. 5d, in the fourth step, the red, green and blue quantum dot solution is dropped into the groove by inkjet printing.
  • a hole blocking layer (HBL) 105 is deposited on the organic light-emitting layer 104 by evaporation; 5f, in the sixth step, forming an electron transport layer (ETL) 106 on the hole blocking layer 105 by vapor deposition; referring to FIG. 5g, in the seventh step, using an evaporation method in the electron transport layer (ETL) A cathode 107 is formed on 106.
  • HBL hole blocking layer
  • ETL electron transport layer
  • the LED display panel 200 according to the second embodiment of the present invention and the LED display panel 300 according to the third embodiment of the present invention can be produced by referring to the above-described manufacturing process.
  • the methods used in the various steps in the above manufacturing process may be other more suitable methods, and the layers may also be other structures that are advantageous for improving the performance of the LED display.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
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  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种LED显示屏（100）的制造方法和一种LED显示屏，制造方法包括在在基板（101）上形成第一电极（102）；在第一电极上形成一功能层（102）；通过纳米压印法在功能层的远离第一电极的表面上形成凹槽（1031）；在凹槽中填充发光溶液形成有机发光层（103）；和在有机发光层上形成第二电极（107）。

Description

LED显示屏的制造方法和LED显示屏
本申请要求于2016年4月15日提交中国专利局、申请号为201610234902.0、发明名称为“LED显示屏的制造方法和LED显示屏”的中国专利申请的优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及量子点发光二极管领域，尤其涉及一种LED显示屏的制造方法和LED显示屏。
背景技术
量子点(quantum dot，简称QD)是一种由Ⅱ﹣Ⅵ族、Ⅲ﹣Ⅴ或Ⅳ﹣Ⅵ族元素组成的纳米颗粒，其受激发后可以发光。量子点的发光波长与量子点粒子的尺寸相关，因此可以通过控制量子点的尺寸，产生各种理想波长的可见光。此外，量子点发光材料具有光色纯度高、发光量子效率高、使用寿命长等优点，是一种很有前景的电致发光材料。
基于量子点电致发光的显示屏(QLED)与有机电致发光显示屏(OLED)类似，都是采用类似三明治的叠层结构。其中，QLED发光层使用量子点代替了OLED中的有机发光材料，克服了有机发光材料对水氧敏感、稳定性差等缺点。
制备QLED的方法有旋涂、喷墨打印以及接触转印等，制备全彩QLED器件最好的方法就是采用喷墨打印技术。目前喷墨打印制备QLED的方法的缺点有：(1)需要一次光刻形成像素凹槽，成本较高；(2)打印的阳极电导率不高，器件的发光性能不良。
发明内容
本发明提供一种LED显示屏的制造方法和LED显示屏，能够简化制作工艺，降低生产成本，并且有效提升产品良率。
本发明提供一种LED显示屏的制造方法，包括：在基板上形成第一电极；在所述第一电极上形成一功能层；通过纳米压印法在所述功能层的远离所述第一电极的表面上形成凹槽；在所述凹槽中填充发光溶液形成有机发光层；和在所述有机发光层上形成第二电极。
其中，所述第一电极为阳极，所述功能层为空穴传输层，所述第二电极为阴极。
其中，所述第一电极为阴极，所述功能层为空穴阻挡层，所述第二电极为阳极。
其中，所述第一电极为阴极，所述功能层为电子传输层，所述第二电极为阳极。
其中，所述发光溶液为红绿蓝量子点溶液。
其中，所述红绿蓝量电子溶液由疏水性材料制成，所述功能层由亲水性材料制成。
其中，所述阳极由高电导率材料制成，所述高电导率材料包括氧化铟锡或银。
其中，还包括在所述有机发光层和所述阴极之间形成空穴阻挡层和/或在所述空穴阻挡层和所述阴极之间形成电子传输层。
其中，还包括在所述阴极和所述空穴阻挡层之间形成电子传输层和/或在所述有机发光层和所述阳极之间形成空穴传输层。
其中，还包括在所述有机发光层和所述阳极之间形成空穴传输层。
本发明还提供一种LED显示屏，包括第一电极，其形成在基板上；功能层，其形成在所述第一电极上；有机发光层，其由所述功能层的背离所述第一电极的表面上通过纳米压印法一次成型的凹槽中填充发光溶液形成；和第二电极，其形成在所述有机发光层上。
其中，所述第一电极为阳极，所述功能层为空穴传输层，所述第二电极为阴极。
其中，所述第一电极为阴极，所述功能层为空穴阻挡层，所述第二电极为阳极。
其中，所述第一电极为阴极，所述功能层为电子传输层，所述第二电极为 阳极。
其中，所述发光溶液为红绿蓝量子点溶液。
其中，所述红绿蓝量电子溶液由疏水性材料制成，所述功能层由亲水性材料制成。
其中，所述阳极由高电导率材料制成，所述高电导率材料包括氧化铟锡或银。
其中，还包括所述有机发光层和所述阴极之间形成的空穴阻挡层和/或所述空穴阻挡层和所述阴极之间形成的电子传输层。
其中，还包括所述阴极和所述空穴阻挡层之间形成的电子传输层和/或所述有机发光层和所述阳极之间形成的空穴传输层。
其中，还包括所述有机发光层和所述阳极之间形成的空穴传输层。
相较于现有技术，本发明通过喷墨打印在采用纳米压印技术一次成型的预设凹槽中填充发光溶液，从而形成有机发光层，该凹槽无需经过涂覆、曝光、显影等光刻工艺制成，简化了制作工艺，降低生产成本，并且能够有效提升产品良率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是根据本发明的第一实施例的LED显示屏的截面示意图；
图2是根据本发明的LED显示屏的空穴传输层上的凹槽的示意图；
图3是根据本发明的第二实施例的LED显示屏的截面示意图；
图4是根据本发明的第三实施例的LED显示屏的截面示意图；
图5a至图5g是根据本发明的第一实施例的LED显示屏的制造过程的截面示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
参照图1，示出根据本发明的第一实施例的LED(Light Emitting Diode，发光二极管)显示屏100，包括层叠设置的基板101、阳极102、空穴传输层103、有机发光层104、空穴阻挡层105、电子传输层106以及阴极107。其中，空穴传输层103的远离阳极102的表面上直到滴满为止从而形成有通过纳米压印法形成的凹槽1031，发光溶液滴入到凹槽1031中形成有机发光层104。基板101一般由玻璃制成。在本实施例中，发光溶液优选为红R、绿G、蓝B量子点溶液，因而该显示屏100为量子点发光二极管(QLED)显示屏，具有色域广、色纯度高、低能耗、低成本和稳定性好的优点。阳极102则优选由例如氧化铟锡、银等高导电率材料制成，能够防止阳极的电导率不高从而影响显示屏100的发光性能。
参照图2，示出根据本发明的LED显示屏的空穴传输层103上的凹槽1031的示意图，该凹槽1031通过纳米压印法一次成型，具体地，该凹槽1031通过具有纳米图案的模板在空穴传输层103上等比例压印而成，通过避免使用昂贵的光源和投影光学系统，纳米压印比传统光刻方法大大降低了成本，并且不受光学光刻中最短曝光波长的物理限制。
优选地，红绿蓝量子点溶液由疏水性材料制成，而空穴传输层103由亲水性材料制成，例如聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)水溶液等，由于疏水性材料和亲水性材料之间的排斥作用，将会避免相邻凹槽中的量子点溶液相互混色，从而可以提高产品良率。
在该结构中，当向阳极102和阴极107施加驱动电压时，从被施加阳极电压的阳极102注入的空穴经由空穴传输层103而向各有机发光层104移动，同时电子经由电子传输层106从被施加阴极电压的阴极107注入到各有机发光层104中。电子和空穴在有机发光层104处复合以产生激子。随着该激子从激发态变为基态，有机发光层104的荧光分子发光，从而显示图像。其中空穴 传输层103和电子传输层106的作用是实现空穴或电子的定向可控迁移，以提高显示屏100的发光效率。空穴阻挡层105能够限制阳极102注入的空穴的迁移，平衡了载流子，防止空穴注入阴极而构成漏电流。
需要说明，在根据本发明的其他实施例中，在不影响LED显示屏100的性能的前提下，LED显示屏100中的空穴阻挡层105和/或电子传输层106的层叠位置可以互换，此外，LED显示屏100中的空穴阻挡层105和/或电子传输层106可以省略。
参照图3，示出根据本发明的第二实施例的LED(Light Emitting Diode，发光二极管)显示屏200，包括层叠设置的基板201、阴极202、电子传输层203、空穴阻挡层204、有机发光层205、空穴传输层206以及阳极207。其中，空穴阻挡层204的远离阴极202的表面上直到滴满为止从而形成有通过纳米压印法形成的凹槽2041，发光溶液滴入到凹槽2041中直到滴满为止从而形成有机发光层205。基板201一般由玻璃制成。在本实施例中，发光溶液优选为红R、绿G、蓝B量子点溶液，因而该显示屏200为量子点发光二极管(QLED)显示屏，具有色域广、色纯度高、低能耗、低成本和稳定性好的优点。阳极207则优选由例如氧化铟锡(ITO)、银等高导电率材料制成，能够防止阳极的电导率不高从而影响显示屏200的发光性能。
优选地，红绿蓝量子点溶液由疏水性材料制成，而空穴阻挡层204由亲水性材料制成，由于疏水性材料和亲水性材料之间的排斥作用，将会避免相邻凹槽中的量子点溶液相互混色，从而可以提高产品良率。
在该结构中，当向阴极202和阳极207施加驱动电压时，从被施加阳极电压的阳极207注入的空穴经由空穴传输层206而向各有机发光层205移动，同时电子经由电子传输层203从被施加阴极电压的阴极202注入到各有机发光层205中。电子和空穴在有机发光层205处复合以产生激子。随着该激子从激发态变为基态，有机发光层205的荧光分子发光，从而显示图像。其中空穴传输层206和电子传输层203的作用是实现空穴或电子的定向可控迁移，以提高显示屏200的发光效率。空穴阻挡层204能够限制阳极202注入的空穴的迁移，平衡了载流子，防止空穴注入阴极而构成漏电流。
需要说明，在根据本发明的其他实施例中，在不影响LED显示屏200的 性能的前提下，LED显示屏200中的空穴传输层206和/或电子传输层203可以省略。
参照图4，示出根据本发明的第三实施例的LED(Light Emitting Diode，发光二极管)显示屏300，包括层叠设置的基板301、阴极302、空穴阻挡层303、电子传输层304、有机发光层305、空穴传输层306以及阳极307。其中，电子传输层304的远离阴极302的表面上形成有通过纳米压印法形成的凹槽3041，发光溶液滴入到凹槽3041中直到滴满为止从而形成有机发光层305。基板301一般由玻璃制成。在本实施例中，发光溶液优选为红R、绿G、蓝B量子点溶液，因而该显示屏300为量子点发光二极管(QLED)显示屏，具有色域广、色纯度高、低能耗、低成本和稳定性好的优点。阳极307则优选由例如氧化铟锡、银等高导电率材料制成，能够防止阳极的电导率不高从而影响显示屏300的发光性能。
优选地，红绿蓝量子点溶液由疏水性材料制成，而电子传输层304由亲水性材料制成，由于疏水性材料和亲水性材料之间的排斥作用，将会避免相邻凹槽中的量子点溶液相互混色，从而可以提高产品良率。
在该结构中，当向阴极302和阳极307施加驱动电压时，从被施加阳极电压的阳极307注入的空穴经由空穴传输层306而向各有机发光层305移动，同时电子经由电子传输层304从被施加阴极电压的阴极302注入到各有机发光层305中。电子和空穴在有机发光层305处复合以产生激子。随着该激子从激发态变为基态，有机发光层305的荧光分子发光，从而显示图像。其中空穴传输层306和电子传输层304的作用是实现空穴或电子的定向可控迁移，以提高显示屏300的发光效率。
需要说明，在根据本发明的其他实施例中，在不影响LED显示屏300的性能的前提下，LED显示屏300中的空穴传输层306和/或空穴阻挡层303可以省略。
图5a至图5g示出根据本发明的第一实施例的LED显示屏100的制造过程的截面示意图，参照图5a，在第一步骤中，通过溅射法将氧化铟锡(ITO)溅射到基板101上或者将金属银通过蒸镀法施加到基板101上制备阳极(Anode)102；参照图5b，在第二步骤中，通过旋涂法在阳极102上制备空 穴传输层(HTL)103，该空穴传输层103的厚度为50nm左右；参照图5c，在第三步骤中，采用纳米压印法，在空穴传输层103的远离阳极102的表面上压印出高度为30nm左右的凹槽1031，该凹槽1031通过具有纳米图案的模板在空穴传输层103上等比例压印而成，通过避免使用昂贵的光源和投影光学系统，纳米压印比传统光刻方法大大降低了成本，并且不受光学光刻中最短曝光波长的物理限制；参照图5d，在第四步骤中，采用喷墨打印法将红绿蓝量子点溶液滴入到凹槽1031中，直至填满凹槽1031，以形成有机发光层104；参照图5e，在第五步骤中，采用蒸镀法，在有机发光层104上沉积空穴阻挡层(HBL)105；参照图5f，在第六步骤中，采用蒸镀法，在空穴阻挡层105上形成电子传输层(ETL)106；参照图5g，在第七步骤中，采用蒸镀法，在电子传输层(ETL)106上形成阴极(Cathode)107。
需要说明，根据本发明的第二实施例的LED显示屏200和根据本发明的第三实施例的LED显示屏300可以参照上述制造过程制得。此外，上述制造过程中的各步骤中采用的方法也可以是其他更合适的方法，各层也可以是利于改善LED显示屏性能的其他结构。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (20)

  1. 一种LED显示屏的制造方法，其中，包括：
    在基板上形成第一电极；
    在所述第一电极上形成一功能层；
    通过纳米压印法在所述功能层的远离所述第一电极的表面上形成凹槽；
    在所述凹槽中填充发光溶液形成有机发光层；和
    在所述有机发光层上形成第二电极。
  2. 如权利要求1所述的LED显示屏的制造方法，其中，所述第一电极为阳极，所述功能层为空穴传输层，所述第二电极为阴极。
  3. 如权利要求1所述的LED显示屏的制造方法，其中，所述第一电极为阴极，所述功能层为空穴阻挡层，所述第二电极为阳极。
  4. 如权利要求1所述的LED显示屏的制造方法，其中，所述第一电极为阴极，所述功能层为电子传输层，所述第二电极为阳极。
  5. 如权利要求1所述的LED显示屏的制造方法，其中，所述发光溶液为红绿蓝量子点溶液。
  6. 如权利要求5所述的LED显示屏的制造方法，其中，所述红绿蓝量电子溶液由疏水性材料制成，所述功能层由亲水性材料制成。
  7. 如权利要求6所述的LED显示屏的制造方法，其中，所述阳极由高电导率材料制成，所述高电导率材料包括氧化铟锡或银。
  8. 如权利要求2所述的LED显示屏的制造方法，其中，还包括在所述有机发光层和所述阴极之间形成空穴阻挡层和/或在所述空穴阻挡层和所述阴极之间形成电子传输层。
  9. 如权利要求3所述的LED显示屏的制造方法，其中，还包括在所述阴极和所述空穴阻挡层之间形成电子传输层和/或在所述有机发光层和所述阳极之间形成空穴传输层。
  10. 如权利要求4所述的LED显示屏的制造方法，其中，还包括在所述阴极和所述电子传输层之间形成空穴阻挡层和/或在所述有机发光层和所述阳极之间形成空穴传输层。
  11. 一种LED显示屏，其中，包括：
    第一电极，其形成在基板上；
    功能层，其形成在所述第一电极上；
    有机发光层，其由所述功能层的背离所述第一电极的表面上通过纳米压印法一次成型的凹槽中填充发光溶液形成；和
    第二电极，其形成在所述有机发光层上。
  12. 如权利要求11所述的LED显示屏，其中，所述第一电极为阳极，所述功能层为空穴传输层，所述第二电极为阴极。
  13. 如权利要求11所述的LED显示屏，其中，所述第一电极为阴极，所述功能层为空穴阻挡层，所述第二电极为阳极。
  14. 如权利要求11所述的LED显示屏，其中，所述第一电极为阴极，所述功能层为电子传输层，所述第二电极为阳极。
  15. 如权利要求11所述的LED显示屏，其中，所述发光溶液为红绿蓝量子点溶液。
  16. 如权利要求15所述的LED显示屏，其中，所述红绿蓝量电子溶液由疏水性材料制成，所述功能层由亲水性材料制成。
  17. 如权利要求16所述的LED显示屏，其中，所述阳极由高电导率材料制成，所述高电导率材料包括氧化铟锡或银。
  18. 如权利要求12所述的LED显示屏，其中，还包括所述有机发光层和所述阴极之间形成的空穴阻挡层和/或所述空穴阻挡层和所述阴极之间形成的电子传输层。
  19. 如权利要求13所述的LED显示屏，其中，还包括所述阴极和所述空穴阻挡层之间形成的电子传输层和/或所述有机发光层和所述阳极之间形成的空穴传输层。
  20. 如权利要求14所述的LED显示屏，其中，还包括所述阴极和所述电子传输层之间形成的空穴阻挡层和/或所述有机发光层和所述阳极之间形成的空穴传输层。
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