CN109585504B - 显示面板及显示面板的制作方法 - Google Patents

显示面板及显示面板的制作方法 Download PDF

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CN109585504B
CN109585504B CN201811306336.5A CN201811306336A CN109585504B CN 109585504 B CN109585504 B CN 109585504B CN 201811306336 A CN201811306336 A CN 201811306336A CN 109585504 B CN109585504 B CN 109585504B
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light emitting
silicon dioxide
emitting diode
silicon
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CN109585504A (zh
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卓恩宗
张合静
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HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
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HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种显示面板及显示面板的制作方法。本发明所述的显示面板包括：封装层；基板，主动开关，形成于基板上；色阻层，形成于主动开关上；第一电极层，形成于色阻层上；发光二极管，形成于第一电极层上；第二电极层，形成于发光二极管上；封装层，形成于第二电极层上；所述发光二极管包括蓝色发光层，所述蓝色发光层包括锗硅量子点材料；所述发光二极管中硅元素的比例区间为65％‑90％，锗元素的比例区间为10％‑35％。本发明可以提升发光二极管的复合性能。

Description

显示面板及显示面板的制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种显示面板及显示面板的制作方法。
背景技术
现有的显示器一般都基于主动开关进行控制，具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，主要包括液晶显示器、OLED(Organic Light-Emitting Diode)显示器、QLED(Quantum Dot Light Emitting Diodes)显示器、等离子显示器等、从外观结构来看，既有平面型显示器、也有曲面型显示器。
对于液晶显示器，包括液晶面板及显示面板(Backlight Module)两大部分，液晶显示器的工作原理是在两片平行的玻璃基板当中放置液晶分子，并在两片玻璃基板上施加驱动电压来控制液晶分子的旋转方向，以将显示面板的光线折射出来产生画面。
对于OLED显示器，采用机发光二极管自发光来进行显示，具有自发光、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点。相比于有机荧光发光体，基于量子点的发光具有高色纯、长寿命、易分散等优点，加上可采用印刷工艺制备，QLED被普遍认为是下一代显示技术的有力竞争者。目前的QLED复合效率不高，且寿命很短。
发明内容
本发明所要解决的技术问题是提供一种显示面板，以进一步提升晶体管的性能。
本发明的目的是通过以下技术方案来实现的：
根据本发明的一个方面，本发明公开了一种显示面板，包括：
基板，
主动开关，形成于所述基板上；
色阻层，形成于所述主动开关上；
第一电极层，形成于所述色阻层上；
发光二极管，形成于所述第一电极层上；
第二电极层，形成于所述发光二极管上；
封装层，形成于所述第二电极层上；
所述发光二极管包括锗硅量子点材料；
所述发光二极管中硅元素的比例区间为65％-90％，锗元素的比例区间为10％-35％。
可选的，所述发光二极管还包括：
电子注入层，与所述负极电极层电连接的；
第一电子传输层，形成于所述电子注入层上；
红/绿发光层，形成于所述电子传输层上；
第一空穴传输层，形成于所述红/绿发光层上；
中间连接层，形成于所述第一空穴传输层上；
第二电子传输层，形成于所述中间连接层上，所述蓝色发光层形成于所述电子传输层上；
第二空穴传输层，形成于所述蓝色发光层上；
空穴注入层，形成于所述第二空穴传输层上，与所述正极电极层电连接。
可选的，所述蓝色发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内。
可选的，所述孔洞按六边形规则排布。
可选的，所述孔洞的直径范围是2-7纳米；所述孔洞的孔壁厚度范围是1-2纳米。
可选的，所述红/绿发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内。
可选的，所述发光二极管还包括：与所述负极电极层电连接的电子注入层，形成于所述电子注入层上的电子传输层，形成于所述电子传输层上的红/绿发光层，形成于所述红/绿发光层上的第一空穴传输层，形成于所述第一空穴传输层上的中间连接层，形成于所述中间连接层上的电子传输层，所述蓝色发光层形成于所述电子传输层上，形成于所述蓝色发光层上的第二空穴传输层，形成于所述第二空穴传输层上的空穴注入层，所述空穴注入层与所述正极电极层电连接；
所述蓝色发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内，所述孔洞按六边形规则排布，所述孔洞的直径范围是2-7纳米；所述孔洞的孔壁厚度范围是1-2纳米。
可选的，所述主动开关包括：
源极和漏极，形成于显示面板的基板上；
两个保护层，形成于基板上并分别部分覆盖源极和漏极，两个保护层之间形成凹槽结构；
半导体层，设置在两个保护层之间，连接源极和漏极；
介电层，设置在两个保护层之间，形成于半导体层上；
栅极，形成于所述介电层上；
钝化层，形成于栅极上；
所述半导体层包括二氧化硅框架，所述二氧化硅框架内设置包含铟镓锌氧化物的合成纳米材料。
根据本发明的另一个方面，本发明还公开了一种显示面板的制作方法，包括：
在基板上形成主动开关；
在所述主动开关上形成色阻层；
在所述色阻层上形成第一电极层；
在所述第一电极层上形成发光二极管；
在所述发光二极管上形成第二电极层；
在所述第二电极层上形成封装层；
所述发光二极管包括蓝色发光层，所述蓝色发光层包括锗硅量子点材料。
可选的，所述在第一电极层上形成发光二极管的步骤包括蓝色发光层的制作方法：
形成胶束；
将胶束形成胶束棒；
将胶束棒按六角形排列形成六角矩阵；
将六角矩阵根据有机分子模板自组装机制形成模板中间组；
将模板中间组培烧去除模板形成二氧化硅框架；
在二氧化硅框架内填充锗硅量子点材料。
本发明采用二氧化硅框架自组装分子模板技术，介孔二氧化硅有特定孔道结构，具有中空、密度小、比表面积大，因而具有独特的渗透性、筛分分子能力、光学性能和吸附性，能显著提升蓝色发光层的特性，而锗材料电子迁移率高，又能提升发光二极管QLED的发光效率，因此两者结合能有效发光二极管QLED背光源的导电性能，进而提高了发光二极管QLED的复合性能，提高发光二极管QLED的使用寿命。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本发明实施例的显示面板结构示意图；
图2是本发明实施例的一种发光二极管的结构示意图；
图3是本发明实施例显示装置的结构示意图；
图4是本发明实施例主动开关的结构示意图；
图5是本发明实施例显示面板的制作方法的示意图；
图6是本发明实施例发光二极管的制作方法的示意图；
图7是本发明实施例规则微观-二氧化硅框架通过自组装分子模板方法流程示意图。
图8是本发明实施例自组装介孔二氧化硅框架技术示意图；
图9是本发明实施例纳米多孔二氧化硅介质的制备方法示意图；
图10是本发明实施例规则微观-二氧化硅框架通过自组装分子模板方法流程示意图。
具体实施方式
本发明实施例所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本发明的示例性实施例的目的。但是本发明可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本发明的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图1至10和较佳的实施例对本实施方式作进一步详细说明。
参考图1、8-10，本实施方式公开的显示面板包括：
封装层31；
负极电极层32，设置在封装层31上；
发光二极管33，设置在负极电极层32上；
正极电极层34，设置在发光二极管33上；
驱动电路35，与负极电极层32和正极电极层34电连接；
所述发光二极管包括锗硅量子点材料14；所述发光二极管中硅元素的比例区间为65％-90％，锗元素的比例区间为10％-35％。
本实施例可选的，所述发光二极管33包括蓝色发光层36，所述蓝色发光层36中掺杂有锗硅量子点材料。
本实施例可选的，所述蓝色发光层36包括二氧化硅框架10，二氧化硅框架10采用介孔材料16(即介孔二氧化硅材料)制成。所述锗硅量子点材料14形成于所述二氧化硅框架10内，二氧化硅框架10包括若干圆柱形的孔洞12，所述孔洞12贯穿二氧化硅框架10，所述锗硅量子点材料14填充于所述孔洞12内，锗和硅元素也会嵌入到二氧化硅孔壁11内。二氧化硅框架10包括若干圆柱形的孔洞12，所述孔洞12贯穿二氧化硅框架10，所述锗硅量子点材料14填充于所述孔洞12内。采用孔洞12结构方便采用自组装分子模板溶液氧化物实施，孔洞12可以是圆柱形，也可以是多边形，不同的制作工艺和产品要求可以制作出不同形状的孔洞12结构，因此，各种形状的孔洞12结构都在本实施方式构思范围内。
本实施例可选的，孔洞12按六边形规则排布。六边形规则排布可以形成类蜂巢的结构，稳定性好。
本实施例可选的，孔洞12的直径范围是D1：2-7纳米；所述孔洞12的孔壁厚度范围是D2：1-2纳米。所述孔洞12的孔壁厚度范围是1-2纳米。孔洞12、孔壁的尺寸太大和太小都不合适，孔洞12的直径范围是2-7纳米、孔洞12的孔壁厚度范围是1-2纳米能保障蓝色发光层36的性能。
本实施例可选的，分子模版13包括二氧化硅材料制作形成的孔壁；孔壁上IGZO材料的纳米晶体15，纳米晶体15包含锗和硅两者化学元素。分子模版13也采用镂空的结构，以便IGZO材料的纳米晶体15可以较为均匀地与介孔二氧化硅混合，提高导电性能。
量子点是指低维限制系统中的零维系统，典型结构是其尺度被限定在100nm的区域内，小于电子的平均自由程(电子在相距两次碰撞间平均运动的路程)。量子点由一种或多种半导体组成，通过控制量子点尺寸可以获得不同发光颜色。
当一束光照射到半导体材料上，半导体材料吸收光子后，其价带上的电子跃迁到导带，导带上的电子还可以在跃迁回价带二发射光子，也可以落入半导体材料的电子陷阱中。
量子点的电荷注入原理(charge injection)可以用以下三个过程来介绍。
第一步：当施加一个正外向偏压，空穴和电子克服界面能障，经由阳极和阴极注入，分别进入空穴传输层的价带能级和电子传输层的导带能。
第二步：是空穴和电子因外部电场的能阶差，使得界面会有电荷的累积。
第三步：当电子、空穴在量子点内再结合后，形成一激发子，次激发态在一般的环境中是不稳定的，能量将以光或热的形式释放出来而回到稳定的基态，因此电致发光是一个电流驱动的现象。
二氧化硅框架自组装分子模板技术，介孔二氧化硅有特定孔道结构，具有中空、密度小、比表面积大，因而具有独特的渗透性、筛分分子能力、光学性能和吸附性，能显著提升蓝色发光层的特性，而锗材料电子迁移率高，又能提升发光二极管QLED的发光效率，因此两者结合能有效发光二极管QLED背光源的导电性能，进而提高了发光二极管QLED的复合性能，提高发光二极管QLED的使用寿命。本实施方式采用了规则纳米IGZO(GE，SiGe)的自组装分子模板技术，作为客体的前驱体(precursor)的IGZO源(IGZO source)，使得位于主体的分子模版表面的硅-氢氧根功能组可以转换为纳米IGZO、锗、硅所需的纳米粒子(Si-(IGZO)x；Ge,Si,nano-dots)。这样就显著提高了蓝色发光层的导电性能，进而提高了QLED的性能。
图2所示的实施例公开了一种具体的发光二极管结构，该发光二极管结构包括：
电子注入层37，与所述负极电极层32电连接的；
第一电子传输层38，形成于所述电子注入层37上；
红/绿发光层39，形成于所述电子传输层上；
第一空穴传输层40，形成于所述红/绿发光层39上；
中间连接层41，形成于所述第一空穴传输层40上；
第二电子传输层42，形成于所述中间连接层41上，所述蓝色发光层36形成于所述电子传输层上；
第二空穴传输层43，形成于所述蓝色发光层36上；
空穴注入层44，形成于所述第二空穴传输层43上，与所述正极电极层34电连接。
蓝色发光层36的具体构造可以参考上述实施方式，在此不再赘述。
参考图3，本实施方式公开的显示装置包括：显示面板，以及本发明所述的显示面板。所述显示面板包括：
基板23；
多个主动开关52，形成于基板23上；
多个色阻层51，形成于主动开关52上；
所述正极电极层34覆盖在多个色阻层51上方，所述正极电极层34采用透明导电材料制成，例如采用铟锡氧化物(Indium Tin Oxides，ITO)。显示面板及蓝色发光层的具体构造可以参考上述实施方式，在此不再赘述。
图4所示实施方式公开一种主动开关的具体结构，该主动开关包括：
源极24和漏极25，形成于显示面板的基板23上；
两个保护层30，形成于基板23上并分别部分覆盖源极24和漏极25，两个保护层30之间形成凹槽结构；
半导体层27，设置在两个保护层30之间，连接源极24和漏极25；
介电层28，设置在两个保护层30之间，形成于半导体层27上；
栅极26，形成于所述介电层28上；
钝化层29，形成于栅极26上。
所述半导体层27包括二氧化硅框架10，所述二氧化硅框架10内设置包含铟镓锌氧化物(indium gallium zinc oxide；IGZO)的合成纳米材料。二氧化硅框架10有特定孔道结构，具有中空、密度小、比表面积大，因而具有独特的渗透性、筛分分子能力、光学性能和吸附性，能显著提升半导体层27特性。本实施方式采用了规则纳米IGZO(Ge，SiGe)的自组装分子模板技术，作为客体的前驱体(precursor)的IGZO源(IGZO source)，使得位于主体的分子模版13表面的硅-氢氧根功能组可以转换为纳米IGZO、锗、硅所需的纳米粒子(Si-(IGZO)x；Ge,Si,nano-dots)。这样就显著提高了半导体层27的导电性能，进而提高了TFT的性能。
参考图5，本实施方式公开了一种显示面板的制作方法，包括：
S51、在基板上形成主动开关；
S52、在主动开关上形成色阻层；
S53、在色阻层上形成第一电极层；
S54、在第一电极层上形成发光二极管；
S55、在发光二极管上形成第二电极层；
S56、在第二电极层上形成封装层；
所述发光二极管包括锗硅量子点材料。
本发明二氧化硅框架自组装分子模板技术，介孔二氧化硅有特定孔道结构，具有中空、密度小、比表面积大，因而具有独特的渗透性、筛分分子能力、光学性能和吸附性，能显著提升蓝色发光层的特性，而锗材料电子迁移率高，又能提升QLED的发光效率，因此两者结合能有效QLED背光源的导电性能，进而提高了QLED的复合性能，提高QLED的使用寿命。蓝色发光层的具体构造可以参考上述实施方式，在此不再赘述。
参考图6-10，本实施例公开了一种发光二极管33蓝色发光层36的制作方法，包括：
S61、形成胶束18；
S62、将胶束18形成胶束棒19；
S63、将胶束棒19按六角形排列形成六角矩阵20；
S64、将六角矩阵20根据有机分子模板自组装机制形成模板中间组21；
S65、将模板中间组培烧去除模板形成二氧化硅框架10；
S66、在二氧化硅框架10内填充锗硅量子点材料14。
利用胶束棒19组成的六角形阵列作为模版，模板本身既是定型剂，又是稳定剂，通过改变其形状和尺寸可以实现对材料结构的预期调控；此外，实验装置简单、操作容易。且胶束棒19可以重复利用，减少浪费，有利于降低成本和减少环境污染。显示面板及蓝色发光层的具体构造可以参考上述实施方式，在此不再赘述。
在上述实施例中，主动开关可为薄膜晶体管，显示面板可包括液晶面板、等离子面板、OLED面板、QLED面板等。另外，显示面板可以是平面型面板，也可以是曲面型面板。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。

Claims (10)

1.一种显示面板，其特征在于，包括：
基板，
主动开关，形成于所述基板上；
色阻层，形成于所述主动开关上；
第一电极层，形成于所述色阻层上；
发光二极管，形成于所述第一电极层上；
第二电极层，形成于所述发光二极管上；
封装层，形成于所述第二电极层上；
所述发光二极管包括锗硅量子点材料；
所述发光二极管中硅元素的比例区间为65％-90％，锗元素的比例区间为10％-35％。
2.根据权利要求1所述的显示面板，其特征在于，所述发光二极管还包括：
负极电极层和正极电极层；
电子注入层，与所述负极电极层电连接的；
第一电子传输层，形成于所述电子注入层上；
红/绿发光层，形成于所述电子传输层上；
第一空穴传输层，形成于所述红/绿发光层上；
中间连接层，形成于所述第一空穴传输层上；
第二电子传输层，形成于所述中间连接层上，
蓝色发光层，形成于所述电子传输层上；
第二空穴传输层，形成于所述蓝色发光层上；
空穴注入层，形成于所述第二空穴传输层上，与所述正极电极层电连接。
3.根据权利要求2所述的显示面板，其特征在于，所述蓝色发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内。
4.根据权利要求3所述的显示面板，其特征在于，所述孔洞按六边形规则排布。
5.根据权利要求3所述的显示面板，其特征在于，所述孔洞的直径范围是2-7纳米；所述孔洞的孔壁厚度范围是1-2纳米。
6.根据权利要求2所述的显示面板，其特征在于，所述红/绿发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内。
7.根据权利要求1所述的显示面板，其特征在于，所述发光二极管还包括：负极电极层，正极电极层，与所述负极电极层电连接的电子注入层，形成于所述电子注入层上的电子传输层，形成于所述电子传输层上的红/绿发光层，形成于所述红/绿发光层上的第一空穴传输层，形成于所述第一空穴传输层上的中间连接层，形成于所述中间连接层上的电子传输层，形成于所述电子传输层上的蓝色发光层，形成于所述蓝色发光层上的第二空穴传输层，形成于所述第二空穴传输层上的空穴注入层，所述空穴注入层与所述正极电极层电连接；
所述蓝色发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内，所述孔洞按六边形规则排布，所述孔洞的直径范围是2-7纳米；所述孔洞的孔壁厚度范围是1-2纳米。
8.如权利要求1所述的显示面板，其特征在于，所述主动开关包括：
源极和漏极，形成于显示面板的基板上；
两个保护层，形成于基板上并分别部分覆盖源极和漏极，两个保护层之间形成凹槽结构；
半导体层，设置在两个保护层之间，连接源极和漏极；
介电层，设置在两个保护层之间，形成于半导体层上；
栅极，形成于所述介电层上；
钝化层，形成于栅极上；
所述半导体层包括二氧化硅框架，所述二氧化硅框架内设置包含铟镓锌氧化物的合成纳米材料。
9.一种显示面板的制作方法，其特征在于，包括：
在基板上形成主动开关；
在所述主动开关上形成色阻层；
在所述色阻层上形成第一电极层；
在所述第一电极层上形成发光二极管；
在所述发光二极管上形成第二电极层；
在所述第二电极层上形成封装层；
所述发光二极管包括锗硅量子点材料；
其中，所述发光二极管中硅元素的比例区间为65％-90％，锗元素的比例区间为10％-35％。
10.根据权利要求9所述的显示面板的制作方法，其特征在于，所述在第一电极层上形成发光二极管的步骤包括蓝色发光层的制作方法：
形成胶束；
将胶束形成胶束棒；
将胶束棒按六角形排列形成六角矩阵；
将六角矩阵根据有机分子模板自组装机制形成模板中间组；
将模板中间组培烧去除模板形成二氧化硅框架；
在二氧化硅框架内填充锗硅量子点材料。
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