WO2020093310A1 - 一种显示面板、显示装置及制作方法 - Google Patents

一种显示面板、显示装置及制作方法 Download PDF

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WO2020093310A1
WO2020093310A1 PCT/CN2018/114558 CN2018114558W WO2020093310A1 WO 2020093310 A1 WO2020093310 A1 WO 2020093310A1 CN 2018114558 W CN2018114558 W CN 2018114558W WO 2020093310 A1 WO2020093310 A1 WO 2020093310A1
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layer
silicon dioxide
holes
light emitting
transport layer
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PCT/CN2018/114558
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English (en)
French (fr)
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卓恩宗
张合静
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惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US16/341,448 priority Critical patent/US11367847B2/en
Publication of WO2020093310A1 publication Critical patent/WO2020093310A1/zh

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    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K59/1201—Manufacture or treatment

Definitions

  • the present application relates to the field of display technology, and in particular, to a display panel, a display device, and a manufacturing method.
  • the displays known to the inventors are generally controlled based on active switches, which have many advantages such as thin body, power saving, no radiation, etc., and have been widely used, including LCD displays, OLED (Organic Light-Emitting Diode) displays, QLED Quantum Dot Light Emitting Diodes) displays, plasma displays, etc.
  • LCD displays LCD displays
  • OLED (Organic Light-Emitting Diode) displays QLED Quantum Dot Light Emitting Diodes) displays
  • plasma displays etc.
  • appearance structure there are both flat displays and curved displays.
  • the working principle of the liquid crystal display is to place liquid crystal molecules in two parallel glass substrates, and apply a driving voltage on the two glass substrates to control the liquid crystal molecules The direction of rotation to refract the light from the display panel to produce a picture.
  • the self-illumination of the organic light-emitting diode is used for display, which has the advantages of self-illumination, wide viewing angle, almost infinitely high contrast, low power consumption, and extremely high response speed.
  • quantum dot-based luminescence has the advantages of high color purity, long life, and easy dispersion.
  • QLED is generally regarded as a strong competitor of the next generation display technology. The current QLED composite efficiency is not high, and the life is very short.
  • the purpose of this application is to provide a display panel to improve the performance of the transistor.
  • the application discloses a display panel, including:
  • the light emitting diode includes germanium silicon quantum dot material
  • the proportion of silicon element in the light emitting diode is 65% -90%, and the proportion of germanium element is 10% -35%.
  • the light emitting diode further includes:
  • the electron injection layer is electrically connected to the negative electrode layer
  • a first hole transport layer is formed on the red / green light-emitting layer
  • a second electron transport layer is formed on the intermediate connection layer, and the blue light-emitting layer is formed on the electron transport layer;
  • a second hole transport layer is formed on the blue light-emitting layer
  • a hole injection layer is formed on the second hole transport layer and is electrically connected to the positive electrode layer.
  • the blue light-emitting layer includes a silicon dioxide frame, and the germanium silicon quantum dot material is formed in the silicon dioxide frame, the silicon dioxide frame includes a plurality of cylindrical holes, the holes penetrate A silicon dioxide frame, the germanium silicon quantum dot material is filled in the holes.
  • the holes are regularly arranged in a hexagon.
  • the diameter range of the hole is 2-7 nanometers; the thickness range of the hole wall of the hole is 1-2 nanometers.
  • the red / green light-emitting layer includes a silicon dioxide frame, and the germanium silicon quantum dot material is formed in the silicon dioxide frame, the silicon dioxide frame includes a plurality of cylindrical holes, and the holes Through the silicon dioxide frame, the silicon germanium quantum dot material is filled in the hole.
  • the light emitting diode further includes: an electron injection layer electrically connected to the negative electrode layer, an electron transport layer formed on the electron injection layer, and red / green light emission formed on the electron transport layer Layer, a first hole transport layer formed on the red / green light-emitting layer, an intermediate connection layer formed on the first hole transport layer, an electron transport layer formed on the intermediate connection layer,
  • the blue light emitting layer is formed on the electron transport layer, the second hole transport layer formed on the blue light emitting layer, the hole injection layer formed on the second hole transport layer, the The hole injection layer is electrically connected to the positive electrode layer;
  • the blue light-emitting layer includes a silicon dioxide frame, and the germanium silicon quantum dot material is formed in the silicon dioxide frame.
  • the silicon dioxide frame includes a plurality of cylindrical holes, and the holes penetrate the silicon dioxide frame ,
  • the germanium-silicon quantum dot material is filled in the holes, the holes are regularly arranged in a hexagonal shape, the diameter of the holes is in the range of 2-7 nanometers; Nano.
  • the active switch includes:
  • the source electrode and the drain electrode are formed on the substrate of the display panel;
  • Two protective layers are formed on the substrate and partially cover the source and drain, respectively, and a groove structure is formed between the two protective layers;
  • the semiconductor layer is provided between the two protective layers and connects the source and drain;
  • the dielectric layer is disposed between the two protective layers and formed on the semiconductor layer;
  • Passivation layer formed on the gate
  • the semiconductor layer includes a silicon dioxide frame, and a synthetic nano material containing indium gallium zinc oxide is disposed in the silicon dioxide frame.
  • the present application also discloses a method for manufacturing a display panel, including:
  • the light emitting diode includes a blue light emitting layer, and the blue light emitting layer includes a silicon germanium quantum dot material.
  • the step of forming a light emitting diode on the first electrode layer includes a manufacturing method of a blue light emitting layer:
  • the micelle rods are arranged in a hexagon to form a hexagonal matrix
  • the hexagonal matrix is formed into a template middle group according to the organic molecular template self-assembly mechanism
  • the silicon germanium quantum dot material is filled in the silicon dioxide frame.
  • the present application also discloses a display device, the display device comprising any of the above-mentioned display panels.
  • This application uses silica framework self-assembling molecular template technology, mesoporous silica has a specific pore structure, has a hollow, small density, and large specific surface area, so it has unique permeability, molecular sieving ability, optical performance and adsorption , Can significantly improve the characteristics of the blue light-emitting layer, and the germanium material has a high electron mobility, and can improve the luminous efficiency of the light-emitting diode QLED, so the combination of the two can effectively light-emitting diode QLED backlight conductive performance, thereby improving the light-emitting diode QLED The composite performance improves the service life of light-emitting diode QLED.
  • FIG. 1 is a schematic structural diagram of a display panel according to one embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a light-emitting diode according to one embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a display device according to one embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of an active switch according to one embodiment of the present application.
  • FIG. 5 is a schematic diagram of a method of manufacturing a display panel according to one embodiment of the present application.
  • FIG. 6 is a schematic diagram of a method for manufacturing a light-emitting diode according to one embodiment of the present application.
  • FIG. 7 is a schematic flow chart of a method for a regular micro-silica framework through self-assembling molecular templates according to one embodiment of the present application.
  • FIG. 8 is a schematic diagram of a self-assembled mesoporous silica frame technology according to one embodiment of the present application.
  • FIG. 9 is a schematic diagram of a method for preparing a nanoporous silica medium according to one embodiment of the present application.
  • FIG. 10 is a self-assembled analysis of the regular micro-silica frame of one embodiment of this application
  • connection should be understood in a broad sense, for example, it can be fixed connection or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • installation should be understood in a broad sense, for example, it can be fixed connection or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • the display panel includes:
  • the negative electrode layer 32 is provided on the encapsulation layer 31;
  • the light emitting diode 33 is provided on the negative electrode layer 32;
  • the positive electrode layer 34 is provided on the light emitting diode 33;
  • the drive circuit 35 is electrically connected to the negative electrode layer 32 and the positive electrode layer 34;
  • the light-emitting diode includes germanium-silicon quantum dot material 14; the proportion of silicon element in the light-emitting diode is 65% -90%, and the proportion of germanium element is 10% -35%.
  • the light emitting diode 33 includes a blue light emitting layer 36, and the blue light emitting layer 36 is doped with germanium silicon quantum dot material.
  • the blue light-emitting layer 36 includes a silicon dioxide frame 10, and the silicon dioxide frame 10 is made of a mesoporous material 16 (that is, a mesoporous silica material).
  • the silicon germanium quantum dot material 14 is formed in the silicon dioxide frame 10, and the silicon dioxide frame 10 includes a plurality of cylindrical holes 12, the holes 12 penetrate the silicon dioxide frame 10, the germanium silicon quantum dot material 14 is filled in the hole 12, and the elements of germanium and silicon are also embedded in the hole wall 11 of silicon dioxide.
  • the silicon dioxide frame 10 includes a plurality of cylindrical holes 12 extending through the silicon dioxide frame 10, and the germanium silicon quantum dot material 14 is filled in the holes 12.
  • hole 12 facilitates the use of self-assembled molecular template solution oxides.
  • the hole 12 can be cylindrical or polygonal. Different manufacturing processes and product requirements can produce different shapes of hole 12 structures. Therefore, various shapes of The structure of the holes 12 is within the scope of the concept of this embodiment.
  • the holes 12 are regularly arranged in a hexagon.
  • the regular arrangement of hexagons can form a honeycomb-like structure with good stability.
  • the diameter range of the hole 12 is D1: 2-7 nm; the thickness range of the hole wall of the hole 12 is D2: 1-2 nm.
  • the thickness of the hole wall of the hole 12 is in the range of 1-2 nm.
  • the size of the hole 12 and the wall of the hole are too large and too small.
  • the diameter of the hole 12 is in the range of 2-7 nm, and the thickness of the hole 12 in the range of 1-2 nm can guarantee the performance of the blue light-emitting layer 36.
  • the molecular template 13 includes a pore wall formed by a silicon dioxide material; a nanocrystal 15 of IGZO material on the pore wall, the nanocrystal 15 includes both germanium and silicon chemical elements.
  • the molecular template 13 also adopts a hollow structure, so that the nanocrystals 15 of IGZO material can be more uniformly mixed with mesoporous silica to improve the conductivity.
  • Quantum dot refers to a zero-dimensional system in a low-dimensional confinement system.
  • the typical structure is that the scale is limited to a region of 100 nm, which is smaller than the average free path of electrons (the path of electrons moving averagely between two collisions.
  • the quantum dot consists of One or more semiconductors, different luminescent colors can be obtained by controlling the size of quantum dots.
  • the electrons in the valence band transition to the conduction band.
  • the electrons in the conduction band can also emit photons in the transition back to the valence band, or they can fall into the semiconductor material. In the electronic trap.
  • charge injection The principle of charge injection of quantum dots (charge injection) can be introduced by the following three processes.
  • the first step when a positive outward bias is applied, the hole and electron customer service interface energy barrier, injected through the anode and cathode, enters the valence band energy level of the hole transport layer and the conduction band energy of the electron transport layer, respectively.
  • the second step the difference in energy level between the holes and the electrons due to the external electric field makes the interface accumulate charges.
  • Step 3 When the electrons and holes are recombined in the quantum dot, an exciton is formed.
  • the sub-excited state is unstable in a general environment, and the energy will be released in the form of light or heat and return to stable The ground state, so electroluminescence is a current-driven phenomenon.
  • silica has a specific pore structure, has a hollow, small density, large specific surface area, so it has unique permeability, molecular sieving ability, optical performance and adsorption, can be significant Improve the characteristics of the blue light-emitting layer, and the germanium material has a high electron mobility, which can also improve the luminous efficiency of the light-emitting diode QLED. Therefore, the combination of the two can effectively conduct the conductivity of the light-emitting diode QLED backlight, thereby improving the composite performance of the light-emitting diode QLED , Improve the service life of light-emitting diode QLED.
  • This embodiment adopts the self-assembled molecular template technology of regular nano-IGZO (GE, SiGe) as the IGZO source (IGZO source) of the guest, so that the silicon-hydroxide functional group on the surface of the molecular template of the host It can be converted into nanoparticles (Si- (IGZO) x; Ge, Si, nano-dots) required for nano-IGZO, germanium and silicon. This significantly improves the conductivity of the blue light-emitting layer, which in turn improves the performance of the QLED.
  • the light-emitting diode structure includes:
  • the electron injection layer 37 is electrically connected to the negative electrode layer 32;
  • the first electron transport layer 38 is formed on the electron injection layer 37;
  • a red / green light-emitting layer 39 is formed on the electron transport layer
  • the first hole transport layer 40 is formed on the red / green light-emitting layer 39;
  • the intermediate connection layer 41 is formed on the first hole transport layer 40;
  • the second electron transport layer 42 is formed on the intermediate connection layer 41, and the blue light-emitting layer 36 is formed on the electron transport layer;
  • the second hole transport layer 43 is formed on the blue light-emitting layer 36;
  • the hole injection layer 44 is formed on the second hole transport layer 43 and is electrically connected to the positive electrode layer 34.
  • the display device disclosed in this embodiment includes a display panel and the display panel described in this application.
  • the display panel includes:
  • a plurality of active switches 52 are formed on the substrate 23;
  • a plurality of color resist layers 51 are formed on the active switch 52.
  • R is a red color resist
  • G is a green color resist
  • B is a blue color resist
  • W is a white color resist
  • the positive electrode layer 34 covers the plurality of color resist layers 51.
  • the positive electrode layer 34 is made of a transparent conductive material, such as indium tin oxide (ITO).
  • ITO indium tin oxide
  • the active switch includes:
  • the source electrode 24 and the drain electrode 25 are formed on the substrate 23 of the display panel;
  • Two protective layers 30 are formed on the substrate 23 and partially cover the source electrode 24 and the drain electrode 25 respectively, and a groove structure is formed between the two protective layers 30;
  • the semiconductor layer 27 is disposed between the two protective layers 30, and connects the source electrode 24 and the drain electrode 25;
  • the dielectric layer 28 is disposed between the two protective layers 30 and formed on the semiconductor layer 27;
  • the gate 26 is formed on the dielectric layer 28;
  • the passivation layer 29 is formed on the gate 26.
  • the semiconductor layer 27 includes a silicon dioxide frame 10 in which a synthetic nano-material containing indium gallium zinc oxide (IGZO) is disposed.
  • the silica frame 10 has a specific pore structure, has a hollow, small density, and a large specific surface area, and thus has unique permeability, molecular sieving ability, optical performance, and adsorption, and can significantly improve the characteristics of the semiconductor layer 27.
  • This embodiment adopts the self-assembled molecular template technology of regular nano-IGZO (Ge, SiGe) as the object's primary IGZO source (IGZO source), which enables the silicon-hydroxide function on the surface of the molecular template 13 of the host Groups can be converted to nanoparticles (Si- (IGZO) x; Ge, Si, nano-dots) required for nano-IGZO, germanium, and silicon.
  • IGZO source nanoparticles
  • an embodiment of a method for manufacturing a display panel including:
  • the light emitting diode includes germanium silicon quantum dot material.
  • the silica framework self-assembling molecular template technology mesoporous silica has a specific pore structure, has a hollow, small density, and large specific surface area, so it has unique permeability, molecular sieving ability, optical performance and adsorption, It can significantly improve the characteristics of the blue light-emitting layer, and the germanium material has a high electron mobility, and can also improve the luminous efficiency of QLED. Therefore, the combination of the two can effectively conduct the conductivity of the QLED backlight, thereby improving the composite performance of QLED and improving the quality of QLED. Service life.
  • the specific structure of the blue light-emitting layer reference may be made to the above-mentioned embodiments, and details are not described herein again.
  • this application discloses a method for manufacturing a blue light emitting layer 36 of a light emitting diode 33, including:
  • the template itself is both a styling agent and a stabilizer.
  • the expected adjustment of the material structure can be achieved; in addition, the experimental device is simple and easy to operate.
  • the micelle rod 19 can be reused, reducing waste, which is beneficial to reduce costs and reduce environmental pollution.
  • the active switch may be a thin film transistor
  • the display panel may include a liquid crystal panel, a plasma panel, an OLED panel, a QLED panel, and so on.
  • the display panel may be a flat panel or a curved panel.

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Abstract

本申请公开了一种显示面板、显示装置及制作方法。显示面板包括发光二极管；发光二极管包括蓝色发光层，蓝色发光层包括锗硅量子点材料；发光二极管中硅元素的比例区间为65％-90％，锗元素的比例区间为10％-35％。

Description

一种显示面板、显示装置及制作方法
本申请要求于2018年11月5日提交中国专利局、申请号为CN201811306336.5、发明名称为“显示面板及显示面板的制作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种显示面板、显示装置及制作方法。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
发明人知晓的显示器一般都基于主动开关进行控制，具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，主要包括液晶显示器、OLED(Organic Light-Emitting Diode)显示器、QLED(Quantum Dot Light Emitting Diodes)显示器、等离子显示器等、从外观结构来看，既有平面型显示器、也有曲面型显示器。
对于液晶显示器，包括液晶面板及显示面板(Backlight Module)两大部分，液晶显示器的工作原理是在两片平行的玻璃基板当中放置液晶分子，并在两片玻璃基板上施加驱动电压来控制液晶分子的旋转方向，以将显示面板的光线折射出来产生画面。
对于OLED显示器，采用机发光二极管自发光来进行显示，具有自发光、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点。相比于有机荧光发光体，基于量子点的发光具有高色纯、长寿命、易分散等优点，加上可采用印刷工艺制备，QLED被普遍认为是下一代显示技术的有力竞争者。目前的QLED复合效率不高，且寿命很短。
技术解决方案
本申请目的是提供一种显示面板，以提升晶体管的性能。
本申请的目的是通过以下技术方案来实现的：
根据本申请的一个方面，本申请公开了一种显示面板，包括：
基板；
主动开关，形成于所述基板上；
色阻层，形成于所述主动开关上；
第一电极层，形成于所述色阻层上；
发光二极管，形成于所述第一电极层上；
第二电极层，形成于所述发光二极管上；
封装层，形成于所述第二电极层上；
所述发光二极管包括锗硅量子点材料；
所述发光二极管中硅元素的比例区间为65％-90％，锗元素的比例区间为10％-35％。
可选的，所述发光二极管还包括：
电子注入层，与所述负极电极层电连接的；
第一电子传输层，形成于所述电子注入层上；
红/绿发光层，形成于所述电子传输层上；
第一空穴传输层，形成于所述红/绿发光层上；
中间连接层，形成于所述第一空穴传输层上；
第二电子传输层，形成于所述中间连接层上，所述蓝色发光层形成于所述电子传输层上；
第二空穴传输层，形成于所述蓝色发光层上；
空穴注入层，形成于所述第二空穴传输层上，与所述正极电极层电连接。
可选的，所述蓝色发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内。
可选的，所述孔洞按六边形规则排布。
可选的，所述孔洞的直径范围是2-7纳米；所述孔洞的孔壁厚度范围是1-2纳米。
可选的，所述红/绿发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内。
可选的，所述发光二极管还包括：与所述负极电极层电连接的电子注入层，形成于所述电子注入层上的电子传输层，形成于所述电子传输层上的红/绿发光层，形成于所述红/绿发光层上的第一空穴传输层，形成于所述第一空穴传输层上的中间连接层，形成于所述中间连接层上的电子传输层，所述蓝色发光层形成于所述电子传输层上，形成于所述蓝色发光层上的第二空穴传输层，形成于所述第二空穴传输层上的空穴注入层，所述空穴注入层与所述正极电极层电连接；
所述蓝色发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框 架，所述锗硅量子点材料填充于所述孔洞内，所述孔洞按六边形规则排布，所述孔洞的直径范围是2-7纳米；所述孔洞的孔壁厚度范围是1-2纳米。
可选的，所述主动开关包括：
源极和漏极，形成于显示面板的基板上；
两个保护层，形成于基板上并分别部分覆盖源极和漏极，两个保护层之间形成凹槽结构；
半导体层，设置在两个保护层之间，连接源极和漏极；
介电层，设置在两个保护层之间，形成于半导体层上；
栅极，形成于所述介电层上；
钝化层，形成于栅极上；
所述半导体层包括二氧化硅框架，所述二氧化硅框架内设置包含铟镓锌氧化物的合成纳材料。
根据本申请的另一个方面，本申请还公开了一种显示面板的制作方法，包括：
在基板上形成主动开关；
在所述主动开关上形成色阻层；
在所述色阻层上形成第一电极层；
在所述第一电极层上形成发光二极管；
在所述发光二极管上形成第二电极层；
在所述第二电极层上形成封装层；
所述发光二极管包括蓝色发光层，所述蓝色发光层包括锗硅量子点材料。
可选的，所述在第一电极层上形成发光二极管的步骤包括蓝色发光层的制作方法：
形成胶束；
将胶束形成胶束棒；
将胶束棒按六角形排列形成六角矩阵；
将六角矩阵根据有机分子模板自组装机制形成模板中间组；
将模板中间组培烧去除模板形成二氧化硅框架；
在二氧化硅框架内填充锗硅量子点材料。
根据本申请的另一个方面，本申请还公开了一种显示装置，所述显示装置包括上述任一所述的显示面板。
本申请采用二氧化硅框架自组装分子模板技术，介孔二氧化硅有特定孔道 结构，具有中空、密度小、比表面积大，因而具有独特的渗透性、筛分分子能力、光学性能和吸附性，能显著提升蓝色发光层的特性，而锗材料电子迁移率高，又能提升发光二极管QLED的发光效率，因此两者结合能有效发光二极管QLED背光源的导电性能，进而提高了发光二极管QLED的复合性能，提高发光二极管QLED的使用寿命。
附图说明
所包括的附图用来提供对本申请实施例的可选的的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请的其中一个实施例的显示面板结构示意图；
图2是本申请的其中一个实施例的一种发光二极管的结构示意图；
图3是本申请的其中一个实施例的显示装置的结构示意图；
图4是本申请的其中一个实施例的主动开关的结构示意图；
图5是本申请的其中一个实施例的显示面板的制作方法的示意图；
图6是本申请的其中一个实施例的发光二极管的制作方法的示意图；
图7是本申请的其中一个实施例的规则微观-二氧化硅框架通过自组装分子模板方法流程示意图。
图8是本申请的其中一个实施例的自组装介孔二氧化硅框架技术示意图；
图9是本申请的其中一个实施例的纳米多孔二氧化硅介质的制备方法示意图；
图10是本申请的其中一个实施例的规则微观-二氧化硅框架通过自组装分
子模板方法流程示意图。
本申请的实施方式
本申请实施例所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特 定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图1至10和可选的实施例对本实施方式作可选的详细说明。
参考图1、8-10，在一实施例中公开了显示面板包括：
封装层31；
负极电极层32，设置在封装层31上；
发光二极管33，设置在负极电极层32上；
正极电极层34，设置在发光二极管33上；
驱动电路35，与负极电极层32和正极电极层34电连接；
所述发光二极管包括锗硅量子点材料14；所述发光二极管中硅元素的比例区间为65％-90％，锗元素的比例区间为10％-35％。
在一实施例中，所述发光二极管33包括蓝色发光层36，所述蓝色发光层36中掺杂有锗硅量子点材料。
在一实施例中，所述蓝色发光层36包括二氧化硅框架10，二氧化硅框架10采用介孔材料16(即介孔二氧化硅材料)制成。所述锗硅量子点材料14形成于所述二氧化硅框架10内，二氧化硅框架10包括若干圆柱形的孔洞12，所述孔洞12贯穿二氧化硅框架10，所述锗硅量子点材料14填充于所述孔洞12内，锗和硅元素也会嵌入到二氧化硅孔壁11内。二氧化硅框架10包括若干圆柱形的孔洞12，所述孔洞12贯穿二氧化硅框架10，所述锗硅量子点材料14填充于所述孔洞12内。 采用孔洞12结构方便采用自组装分子模板溶液氧化物实施，孔洞12可以是圆柱形，也可以是多边形，不同的制作工艺和产品要求可以制作出不同形状的孔洞12结构，因此，各种形状的孔洞12结构都在本实施方式构思范围内。
在一实施例中，孔洞12按六边形规则排布。六边形规则排布可以形成类蜂巢的结构，稳定性好。
在一实施例中，孔洞12的直径范围是D1：2-7纳米；所述孔洞12的孔壁厚度范围是D2：1-2纳米。所述孔洞12的孔壁厚度范围是1-2纳米。孔洞12、孔壁的尺寸太大和太小都不合适，孔洞12的直径范围是2-7纳米、孔洞12的孔壁厚度范围是1-2纳米能保障蓝色发光层36的性能。
在一实施例中，分子模版13包括二氧化硅材料制作形成的孔壁；孔壁上IGZO材料的纳米晶体15，纳米晶体15包含锗和硅两者化学元素。分子模版13也采用镂空的结构，以便IGZO材料的纳米晶体15可以较为均匀地与介孔二氧化硅混合，提高导电性能。
量子点是指低维限制系统中的零维系统，典型结构是其尺度被限定在100nm的区域内，小于电子的平均自由程(电子在相距两次碰撞间平均运动的路程。量子点由一种或多种半导体组成，通过控制量子点尺寸可以获得不同发光颜色。
当一束光照射到半导体材料上，半导体材料吸收光子后，其价带上的电子跃迁到导带，导带上的电子还可以在跃迁回价带二发射光子，也可以落入半导体材料的电子陷阱中。
量子点的电荷注入原理(charge injection)可以用以下三个过程来介绍。
第一步：当施加一个正外向偏压，空穴和电子客服界面能障，经有阳极和阴极注入，分别进入空穴传输层的价带能级和电子传输层的导带能。
第二步：是空穴和电子因外部电场的能阶差，使得界面会有电荷的累积。
第三步：当电子、空穴在量子点内再结合后，形成一激发子，次激发态在一般的环境中是不稳定的，能量将以光或热的形式释放出来而回到稳定的基态，因此电致发光是一个电流驱动的现象。
二氧化硅框架自组装分子模板技术，介孔二氧化硅有特定孔道结构，具有中空、密度小、比表面积大，因而具有独特的渗透性、筛分分子能力、光学性能和吸附性，能显著提升蓝色发光层的特性，而锗材料电子迁移率高，又能提升发光二极管QLED的发光效率，因此两者结合能有效发光二极管QLED背光源的导电性能，进而提高了发光二极管QLED的复合性能，提高发光二极管QLED的使用寿命。本实施方式采用了规则纳米IGZO(GE，SiGe)的自组装分子模板技术，作为客体的初级 (precursor)的IGZO源(IGZO source)，使得位于主体的分子模版表面的硅-氢氧根功能组可以转换为纳米IGZO、锗、硅所需的纳米粒子(Si-(IGZO)x；Ge,Si,nano-dots)。这样就显著提高了蓝色发光层的导电性能，进而提高了QLED的性能。
图2所示，在一实施例中公开了一种具体的发光二极管结构，该发光二极管结构包括：
电子注入层37，与所述负极电极层32电连接的；
第一电子传输层38，形成于所述电子注入层37上；
红/绿发光层39，形成于所述电子传输层上；
第一空穴传输层40，形成于所述红/绿发光层39上；
中间连接层41，形成于所述第一空穴传输层40上；
第二电子传输层42，形成于所述中间连接层41上，所述蓝色发光层36形成于所述电子传输层上；
第二空穴传输层43，形成于所述蓝色发光层36上；
空穴注入层44，形成于所述第二空穴传输层43上，与所述正极电极层34电连接。
蓝色发光层36的具体构造可以参考上述实施方式，在此不再赘述。
参考图3，本实施方式公开的显示装置包括：显示面板，以及本申请所述的显示面板。所述显示面板包括：
基板23；
多个主动开关52，形成于基板23上；
多个色阻层51，形成于主动开关52上，色阻层51中，R为红色色阻，G为绿色色阻，B为蓝色色阻，W为白色色阻；
所述正极电极层34覆盖在多个色阻层51上方，所述正极电极层34采用透明导电材料制成，例如采用铟锡氧化物(Indium Tin Oxides，ITO)。显示面板及蓝色发光层的具体构造可以参考上述实施方式，在此不再赘述。
图4所示，在一实施例中公开了一种主动开关的具体结构，该主动开关包括：
源极24和漏极25，形成于显示面板的基板23上；
两个保护层30，形成于基板23上并分别部分覆盖源极24和漏极25，两个保护层30之间形成凹槽结构；
半导体层27，设置在两个保护层30之间，连接源极24和漏极25；
介电层28，设置在两个保护层30之间，形成于半导体层27上；
栅极26，形成于所述介电层28上；
钝化层29，形成于栅极26上。
所述半导体层27包括二氧化硅框架10，所述二氧化硅框架10内设置包含铟镓锌氧化物(indium gallium zinc oxide；IGZO)的合成纳材料。二氧化硅框架10有特定孔道结构，具有中空、密度小、比表面积大，因而具有独特的渗透性、筛分分子能力、光学性能和吸附性，能显著提升半导体层27特性。本实施方式采用了规则纳米IGZO(Ge，SiGe)的自组装分子模板技术，作为客体的初级(precursor)的IGZO源(IGZO source)，使得位于主体的分子模版13表面的硅-氢氧根功能组可以转换为纳米IGZO、锗、硅所需的纳米粒子(Si-(IGZO)x；Ge,Si,nano-dots)。这样就显著提高了半导体层27的导电性能，进而提高了TFT的性能。
参考图5，在一实施例中公开了一种显示面板的制作方法，包括：
S51、在基板上形成主动开关；
S52、在主动开关上形成色阻层；
S53、在色阻层上形成第一电极层；
S54、在第一电极层上形成发光二极管；
S55、在发光二极管上形成第二电极层；
S56、在第二电极层上形成封装层；
所述发光二极管包括锗硅量子点材料。
本申请二氧化硅框架自组装分子模板技术，介孔二氧化硅有特定孔道结构，具有中空、密度小、比表面积大，因而具有独特的渗透性、筛分分子能力、光学性能和吸附性，能显著提升蓝色发光层的特性，而锗材料电子迁移率高，又能提升QLED的发光效率，因此两者结合能有效QLED背光源的导电性能，进而提高了QLED的复合性能，提高QLED的使用寿命。蓝色发光层的具体构造可以参考上述实施方式，在此不再赘述。
参考图6-10，本申请公开了一种发光二极管33蓝色发光层36的制作方法，包括：
S61、形成胶束18；
S62、将胶束18形成胶束棒19；
S63、将胶束棒19按六角形排列形成六角矩阵20；
S64、将六角矩阵20根据有机分子模板自组装机制形成模板中间组21；
S65、将模板中间组培烧去除模板形成二氧化硅框架10；
S66、在二氧化硅框架10内填充锗硅量子点材料14。
利用胶束棒19组成的六角形阵列作为模版，模板本身既是定型剂，又是稳定剂，通过改变其形状和尺寸可以实现对材料结构的预期调控；此外，实验装置简单、操作容易。且胶束棒19可以重复利用，减少浪费，有利于降低成本和减少环境污染。显示面板及蓝色发光层的具体构造可以参考上述实施方式，在此不再赘述。
在上述实施例中，主动开关可为薄膜晶体管，显示面板可包括液晶面板、等离子面板、OLED面板、QLED面板等。另外，显示面板可以是平面型面板，也可以是曲面型面板。
以上内容是结合具体的可选实施方式对本申请所作的可选的详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (18)

  1. 一种显示面板，包括：
    基板；
    主动开关，形成于所述基板上；
    色阻层，形成于所述主动开关上；
    第一电极层，形成于所述色阻层上；
    发光二极管，形成于所述第一电极层上；
    第二电极层，形成于所述发光二极管上；
    封装层，形成于所述第二电极层上；
    所述发光二极管包括锗硅量子点材料；以及
    所述发光二极管中硅元素的比例区间为65％-90％，锗元素的比例区间为10％-35％。
  2. 根据权利要求1所述的一种显示面板，其中，所述发光二极管还包括：
    电子注入层，与所述负极电极层电连接的；
    第一电子传输层，形成于所述电子注入层上；
    红/绿发光层，形成于所述电子传输层上；
    第一空穴传输层，形成于所述红/绿发光层上；
    中间连接层，形成于所述第一空穴传输层上；
    第二电子传输层，形成于所述中间连接层上，
    蓝色发光层，形成于所述电子传输层上；
    第二空穴传输层，形成于所述蓝色发光层上；以及
    空穴注入层，形成于所述第二空穴传输层上，与所述正极电极层电连接。
  3. 根据权利要求1所述的一种显示面板，其中，所述蓝色发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内。
  4. 根据权利要求3所述的一种显示面板，其中，所述孔洞按六边形规则排布。
  5. 根据权利要求3所述的一种显示面板，其中，所述孔洞的直径范围是2-7纳米；所述孔洞的孔壁厚度范围是1-2纳米。
  6. 根据权利要求2所述的一种显示面板，其中，所述红/绿发光层包括二氧化硅框 架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内。
  7. 根据权利要求1所述的一种显示面板，其中，所述发光二极管还包括：与所述负极电极层电连接的电子注入层，形成于所述电子注入层上的电子传输层，形成于所述电子传输层上的红/绿发光层，形成于所述红/绿发光层上的第一空穴传输层，形成于所述第一空穴传输层上的中间连接层，形成于所述中间连接层上的电子传输层，所述蓝色发光层形成于所述电子传输层上，形成于所述蓝色发光层上的第二空穴传输层，形成于所述第二空穴传输层上的空穴注入层，所述空穴注入层与所述正极电极层电连接；
    所述蓝色发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内，所述孔洞按六边形规则排布，所述孔洞的直径范围是2-7纳米；所述孔洞的孔壁厚度范围是1-2纳米。
  8. 根据权利要求1所述的一种显示面板，其中，所述主动开关包括：
    源极和漏极，形成于显示面板的基板上；
    两个保护层，形成于基板上并分别部分覆盖源极和漏极，两个保护层之间形成凹槽结构；
    半导体层，设置在两个保护层之间，连接源极和漏极；
    介电层，设置在两个保护层之间，形成于半导体层上；
    栅极，形成于所述介电层上；
    钝化层，形成于栅极上；以及
    所述半导体层包括二氧化硅框架，所述二氧化硅框架内设置包含铟镓锌氧化物的合成纳材料。
  9. 一种显示面板的制作方法，包括：
    在基板上形成主动开关；
    在所述主动开关上形成色阻层；
    在所述色阻层上形成第一电极层；
    在所述第一电极层上形成发光二极管；
    在所述发光二极管上形成第二电极层；
    在所述第二电极层上形成封装层；以及
    所述发光二极管包括锗硅量子点材料。
  10. 根据权利要求9所述的一种显示面板的制作方法，其中，所述在第一电极层上形成发光二极管的步骤包括蓝色发光层的制作方法：
    形成胶束；
    将胶束形成胶束棒；
    将胶束棒按六角形排列形成六角矩阵；
    将六角矩阵根据有机分子模板自组装机制形成模板中间组；
    将模板中间组培烧去除模板形成二氧化硅框架；以及
    在二氧化硅框架内填充锗硅量子点材料。
  11. 一种显示装置，所述显示装置包括显示面板，包括：
    基板；
    主动开关，形成于所述基板上；
    色阻层，形成于所述主动开关上；
    第一电极层，形成于所述色阻层上；
    发光二极管，形成于所述第一电极层上；
    第二电极层，形成于所述发光二极管上；
    封装层，形成于所述第二电极层上；
    所述发光二极管包括锗硅量子点材料；以及
    所述发光二极管中硅元素的比例区间为65％-90％，锗元素的比例区间为10％-35％。
  12. 根据权利要求11所述的一种显示装置，其中，所述发光二极管还包括：
    电子注入层，与所述负极电极层电连接的；
    第一电子传输层，形成于所述电子注入层上；
    红/绿发光层，形成于所述电子传输层上；
    第一空穴传输层，形成于所述红/绿发光层上；
    中间连接层，形成于所述第一空穴传输层上；
    第二电子传输层，形成于所述中间连接层上，
    蓝色发光层，形成于所述电子传输层上；
    第二空穴传输层，形成于所述蓝色发光层上；以及
    空穴注入层，形成于所述第二空穴传输层上，与所述正极电极层电连接。
  13. 根据权利要求11所述的一种显示装置，其中，所述蓝色发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内。
  14. 根据权利要求13所述的一种显示装置，其中，所述孔洞按六边形规则排布。
  15. 根据权利要求13所述的一种显示装置，其中，所述孔洞的直径范围是2-7纳米；所述孔洞的孔壁厚度范围是1-2纳米。
  16. 根据权利要求12所述的一种显示装置，其中，所述红/绿发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内。
  17. 根据权利要求11所述的一种显示装置，其中，所述发光二极管还包括：与所述负极电极层电连接的电子注入层，形成于所述电子注入层上的电子传输层，形成于所述电子传输层上的红/绿发光层，形成于所述红/绿发光层上的第一空穴传输层，形成于所述第一空穴传输层上的中间连接层，形成于所述中间连接层上的电子传输层，所述蓝色发光层形成于所述电子传输层上，形成于所述蓝色发光层上的第二空穴传输层，形成于所述第二空穴传输层上的空穴注入层，所述空穴注入层与所述正极电极层电连接；
    所述蓝色发光层包括二氧化硅框架，所述锗硅量子点材料形成于所述二氧化硅框架内，所述二氧化硅框架包括若干圆柱形的孔洞，所述孔洞贯穿二氧化硅框架，所述锗硅量子点材料填充于所述孔洞内，所述孔洞按六边形规则排布，所述孔洞的直径范围是2-7纳米；所述孔洞的孔壁厚度范围是1-2纳米。
  18. 根据权利要求11所述的一种显示装置，其中，所述主动开关包括：
    源极和漏极，形成于显示面板的基板上；
    两个保护层，形成于基板上并分别部分覆盖源极和漏极，两个保护层之间形成凹槽结构；
    半导体层，设置在两个保护层之间，连接源极和漏极；
    介电层，设置在两个保护层之间，形成于半导体层上；
    栅极，形成于所述介电层上；
    钝化层，形成于栅极上；以及
    所述半导体层包括二氧化硅框架，所述二氧化硅框架内设置包含铟镓锌氧化物的合成纳材料。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632694B2 (en) * 2001-10-17 2003-10-14 Astralux, Inc. Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters
CN107689388A (zh) * 2017-08-08 2018-02-13 惠科股份有限公司 一种显示面板及其制造方法
CN108022976A (zh) * 2017-11-03 2018-05-11 惠科股份有限公司 晶体管和晶体管制造方法
CN108415193A (zh) * 2018-02-05 2018-08-17 惠科股份有限公司 一种显示装置
CN109585503A (zh) * 2018-10-08 2019-04-05 惠科股份有限公司 显示面板及其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101379222A (zh) * 2004-05-19 2009-03-04 伊利诺伊大学受托管理委员会 锗和锗合金纳米颗粒及其制备方法
JP4970267B2 (ja) * 2004-09-14 2012-07-04 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ 珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法
US20080121955A1 (en) * 2006-11-28 2008-05-29 National Applied Research Laboratories Silicon-based ferroelectric memory material and memory
KR101221375B1 (ko) * 2010-09-14 2013-01-11 전남대학교산학협력단 고휘도 청색 발광 나노콜로이드 및 이의 제조방법
CN103903966A (zh) * 2014-03-11 2014-07-02 复旦大学 基于斜切硅衬底的超高密度锗硅量子点的制备方法
JP6391401B2 (ja) * 2014-10-03 2018-09-19 株式会社ジャパンディスプレイ 画像表示装置
US10020458B2 (en) * 2014-12-18 2018-07-10 Lg Display Co., Ltd. White organic light-emitting display device
CN105609535B (zh) * 2016-01-15 2018-11-13 京东方科技集团股份有限公司 显示基板、显示装置及其制作方法
CN108376695B (zh) * 2018-02-05 2021-01-08 惠科股份有限公司 一种显示面板和显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632694B2 (en) * 2001-10-17 2003-10-14 Astralux, Inc. Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters
CN107689388A (zh) * 2017-08-08 2018-02-13 惠科股份有限公司 一种显示面板及其制造方法
CN108022976A (zh) * 2017-11-03 2018-05-11 惠科股份有限公司 晶体管和晶体管制造方法
CN108415193A (zh) * 2018-02-05 2018-08-17 惠科股份有限公司 一种显示装置
CN109585503A (zh) * 2018-10-08 2019-04-05 惠科股份有限公司 显示面板及其制作方法

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