WO2020252837A1 - 一种电致发光显示器件 - Google Patents

一种电致发光显示器件 Download PDF

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Publication number
WO2020252837A1
WO2020252837A1 PCT/CN2019/096271 CN2019096271W WO2020252837A1 WO 2020252837 A1 WO2020252837 A1 WO 2020252837A1 CN 2019096271 W CN2019096271 W CN 2019096271W WO 2020252837 A1 WO2020252837 A1 WO 2020252837A1
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WIPO (PCT)
Prior art keywords
display device
layer
electroluminescent display
pixel definition
definition layer
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PCT/CN2019/096271
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English (en)
French (fr)
Inventor
涂爱国
李金川
吴元均
吕伯彦
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Tcl华星光电技术有限公司
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Priority to US16/617,839 priority Critical patent/US20200411612A1/en
Publication of WO2020252837A1 publication Critical patent/WO2020252837A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the present invention relates to the field of display technology, in particular to an electroluminescent display device.
  • OLED Organic Light-Emitting Diode
  • OLED organic electric laser display device
  • organic light emitting semiconductor organic light emitting semiconductor
  • the basic structure of OLED is a thin, transparent, semi-conducting indium tin oxide (ITO) connected to the positive electrode of electricity, plus another metal-faced cathode, wrapped in a sandwich structure.
  • ITO indium tin oxide
  • the entire structure layer includes: hole transport layer (HTL), light emitting layer (EL) and electron transport layer (ETL).
  • HTL hole transport layer
  • EL light emitting layer
  • ETL electron transport layer
  • the positive electrode holes and the surface cathode charges When the power is supplied to the appropriate voltage, the positive electrode holes and the surface cathode charges will combine in the light-emitting layer, and under the action of the Coulomb force, they will recombine with a certain probability to form excitons (electron-hole pairs) in an excited state.
  • the excited state is unstable in the normal environment.
  • the excitons in the excited state recombine and transfer energy to the luminescent material, making it transition from the ground state energy level to the excited state.
  • the excited state energy generates photons through the radiation relaxation process and releases light It can produce light, and the three primary colors of red, green and blue are produced according to different formulas, which constitute the basic colors.
  • OLED the characteristic of OLED is that it emits light by itself, unlike the thin film transistor liquid crystal display device (English full name: Thin The film transistor-liquid crystal display (TFT-LCD for short) needs backlight, so the visibility and brightness are high.
  • OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption, and extremely high response speed. It has become One of the most important display technologies today is gradually replacing TFT-LCD is expected to become the next-generation mainstream display technology after LCD.
  • the Bottom (bottom) device In the current large-size OLED display devices, in order to achieve 8K resolution, the Bottom (bottom) device has a reduced aperture ratio due to the increase in the number of TFTs, and the device life of OLED is reduced to about two-thirds of 4K OLED TV. In order to improve the life of 8K large-size OLED displays, the use of inkjet printing technology is an important development direction.
  • the color filter package cover is used to improve color uniformity.
  • a black photoresist is used between the color filters to reduce the lateral light leakage of the pixels to improve the lateral viewing angle.
  • blue light in the vertical direction of the panel
  • Normal incident on the green color filter will reduce the color purity of the green light, reduce the color gamut, and cause the chromaticity viewing angle of the image dominated by red and green light. Therefore, it is necessary to seek a new type of electroluminescent display device to solve the above-mentioned problems.
  • An object of the present invention is to provide an electroluminescent display device, which can improve the chromaticity viewing angle of the current electroluminescent display device with a mainly green picture and a red picture.
  • an embodiment of the present invention provides an electroluminescent display device, which includes: a substrate, a thin film transistor, a flat layer, an anode, a first pixel defining layer, and a black photoresist.
  • the thin film transistor is disposed on the substrate; the flat layer is disposed on the thin film transistor; the anode is disposed on the flat layer at intervals; the first pixel definition layer is disposed on two adjacent On the flat layer between the anodes; the black photoresist is arranged in the first pixel definition layer.
  • the anode includes a main body portion and two side portions, and the side portions extend laterally into the first pixel definition layer.
  • the side portion of the black photoresist is also arranged on the side portion of the anode.
  • the shape of the black photoresist corresponds to the shape of the first pixel definition layer.
  • the shape of the black photoresist is trapezoidal.
  • the thickness of the black photoresist ranges from 1 to 5 ⁇ m.
  • the electroluminescent display device further includes a packaging cover plate, and the packaging cover plate is disposed on the first pixel definition layer.
  • the packaging cover plate includes one of a transparent cover plate or a color filter cover plate.
  • the electroluminescent display device further includes a second pixel definition layer, and the second pixel definition layer is disposed on the first pixel definition layer.
  • the black photoresist is arranged in the first pixel definition layer and the second pixel definition layer.
  • the present invention relates to an electroluminescence display device, wherein the electroluminescence display device includes a black photoresist, and the black photoresist is arranged in a pixel definition layer.
  • a black photoresist is added between the pixels to improve the chromaticity viewing angle of the green-based picture and the red-based picture, thereby improving the optical performance of the electroluminescent display device.
  • Fig. 1 is a schematic structural diagram of an electroluminescent display device of Example 1 of the present invention.
  • Example 2 is a schematic diagram of the structure of the electroluminescent display device of Example 2 of the present invention.
  • Fig. 3 is a schematic structural diagram of an electroluminescent display device of Example 3 of the present invention.
  • Example 4 is a schematic diagram of the structure of the electroluminescent display device of Example 4 of the present invention.
  • Electroluminescent display device 1. Substrate
  • the second pixel definition layer 14. The second pixel definition layer
  • the component can be directly placed on the other component; there may also be an intermediate component on which the component is placed , And the intermediate component is placed on another component.
  • a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is “installed to” or “connected to” through an intermediate component Another component.
  • an electroluminescent display device 100 includes: a substrate 1, a thin film transistor 2, a flat layer 3, an anode 4, a first pixel definition layer 5, a black photoresist 6, a hole injection layer 7, The hole transport layer 8, the light emitting layer 9, the electron transport layer 10, the electron injection layer 11, the cathode 12 and the packaging cover 13.
  • the substrate 1 may be coated on a clean glass substrate by a PI (full English name: polyimide film; polyimide) coater, and then obtained by high temperature curing and other processes. Since the PI film has excellent high and low temperature resistance, electrical insulation, adhesion, radiation resistance, and dielectric resistance, the substrate 1 made therefrom has good flexibility.
  • PI full English name: polyimide film; polyimide
  • the thin film transistor 2 is provided on the substrate 1; the flat layer 3 is provided on the thin film transistor 2; the thin film transistor layer 2 and the flat layer 3 are provided with gate, source, drain pole.
  • a positive voltage is applied to the gate, an electric field is generated between the gate and the semiconductor layer. Under the action of this electric field, an electron flow channel is formed, and a conductive state is formed between the source and the drain.
  • the greater the voltage applied to the grid the more electrons are attracted, so the on-current is greater.
  • a negative voltage is applied to the gate, a closed state is formed between the source and the drain.
  • the anodes 4 are arranged on the flat layer 3 at intervals; the first pixel definition layer 5 is arranged on the flat layer 3 between two adjacent anodes 4.
  • the anode 4 includes a main body 41 and two side portions 42, wherein the side portion 42 of the anode 4 extends laterally into the first pixel definition layer 5.
  • the black photoresist 6 may only be arranged in the first pixel definition layer 5; it may also be extended on the side 42 of the anode 4.
  • the black photoresist 6 described in this embodiment is disposed in the first pixel definition layer 5.
  • the black photoresist 6 is added between the pixels to improve the chromaticity viewing angle of the green-based image and the red-based image, thereby improving the optical performance of the electroluminescent display device 100.
  • the black photoresist 6 includes two or more than two. Specifically, it can be arranged on the anode between any pixel and the pixel to reduce the color gamut and improve the optical performance of the electroluminescent display device 100.
  • the shape of the black photoresist 6 corresponds to the shape of the first pixel definition layer 5. Specifically, it may be a trapezoid as shown in the figure.
  • the thickness of the black photoresist 6 ranges from 1 to 5 ⁇ m.
  • the hole injection layer 7 is arranged on the anode 4; the hole transport layer 8 is arranged on the hole injection layer 7; the light-emitting layer 9 is arranged on the hole transport layer 8; The electron transport layer 10 is disposed on the light-emitting layer 9; the electron injection layer 11 is disposed on the electron transport layer 10; the cathode 12 is disposed on the electron injection layer 10.
  • the hole transport layer 8 controls the transport of holes, thereby controlling the recombination of holes and electrons in the light-emitting layer, thereby improving the luminous efficiency.
  • the hole injection layer 8, the hole transport layer 9, and the light emitting layer 10 can be prepared by inkjet printing technology.
  • the electron transport layer 10 includes one or more of an inorganic layer, an organic layer, or a combination of an inorganic layer and an organic layer.
  • the electron transport layer 10 controls the transport of electrons, and further controls the recombination of electrons and holes in the light-emitting layer, thereby improving luminous efficiency.
  • the packaging cover plate 13 is arranged on the cathode 12.
  • the packaging cover 13 includes one of a transparent cover or a color filter cover.
  • the packaging cover used in this embodiment is a transparent cover. In this way, the effect of blocking water and oxygen intrusion is achieved and the service life of the electroluminescent display device 100 is increased.
  • the packaging cover 13 is disposed on the cathode 12.
  • the packaging cover 13 includes one of a transparent cover or a color filter cover.
  • the packaging cover used in this embodiment is a color filter cover. On the one hand, it achieves the effect of blocking the intrusion of water and oxygen and increases the service life of the electroluminescent display device 100; on the other hand, the color filter packaging cover is used to improve the color uniformity, and the color filter is used between the color filters. Black photoresist to reduce the lateral light leakage of the pixel to improve the lateral viewing angle.
  • the electroluminescent display device 100 further includes a second pixel definition layer 14, the second pixel definition layer 14 is disposed on the first pixel definition layer 5, and the black photoresist 6 It is arranged in the first pixel definition layer 5 and the second pixel definition layer 14.
  • the second pixel definition layer 14 is formed by a half-etching mask and a half-etching exposure process. In this way, the flatness of the film layer of the electroluminescent display device 100 can be improved.
  • the electroluminescent display device 100 further includes a second pixel definition layer 14, the second pixel definition layer 14 is disposed on the first pixel definition layer 5, and the black photoresist 6 It is arranged in the first pixel definition layer 5 and the second pixel definition layer 14.
  • the second pixel definition layer 14 is formed by a half-etching mask and a half-etching exposure process. In this way, the flatness of the film layer of the electroluminescent display device 100 can be improved.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明涉及一种电致发光显示器件，其中所述电致发光显示器件包括黑色光阻，所述黑色光阻设置于像素定义层内。本发明通过在像素与像素之间增加黑色光阻，以此改善以绿色为主的画面和以红光为主的画面的色度视角，从而提升电致发光显示器件的光学性能。

Description

一种电致发光显示器件 技术领域
本发明涉及显示技术领域，具体涉及一种电致发光显示器件。
 背景技术
OLED(英文全称：Organic Light-Emitting Diode, 简称OLED)器件又称为有机电激光显示装置、有机发光半导体。OLED的基本结构是由一薄而透明具有半导体特性的铟锡氧化物(ITO)与电力之正极相连，再加上另一个金属面阴极，包成如三明治的结构。整个结构层中包括了:空穴传输层(HTL)、发光层(EL)与电子传输层(ETL)。当电力供应至适当电压时，正极空穴与面阴极电荷就会在发光层中结合，在库伦力的作用下以一定几率复合形成处于激发态的激子（电子-空穴对），而此激发态在通常的环境中是不稳定的，激发态的激子复合并将能量传递给发光材料，使其从基态能级跃迁为激发态，激发态能量通过辐射驰豫过程产生光子，释放出光能，产生光亮，依其配方不同产生红、绿和蓝RGB三基色，构成基本色彩。
首先OLED的特性是自己发光，不像薄膜晶体管液晶显示装置（英文全称：Thin film transistor-liquid crystal display，简称TFT-LCD）需要背光，因此可视度和亮度均高。其次OLED具有电压需求低、省电效率高、反应快、重量轻、厚度薄，构造简单，成本低、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点，已经成为当今最重要的显示技术之一，正在逐步替代 TFT-LCD，有望成为继LCD之后的下一代主流显示技术。
目前的大尺寸OLED显示器件，为达到8K分辨率，Bottom（底部）器件由于TFT数量的增加导致开口率下降，OLED的器件寿命降低到约4K OLED TV的三分之二。为了改善8K 大尺寸OLED显示器的寿命，采用喷墨打印技术是重要的开发方向。
 技术问题
大尺寸OLED显示器件，尤其是以喷墨打印技术制成的显示器，由于透明阴极中含有薄层金属，器件微腔效应明显，器件效率和颜色随有机材料层厚度的变化波动很大，一般采用彩色滤光片封装盖板来提高颜色均匀性，在彩色滤光片之间采用黑色光阻来减少像素的侧向漏光，以改善侧向视角，但是在蓝光的大角度光线(以面板垂直方向为法线)入射到绿光彩色滤光片时会降低绿光的色彩纯度，降低色域，造成以红光和绿光为主的画面的色度视角。因此需要寻求一种新型的电致发光显示器件以解决上述问题。
 技术解决方案
本发明的一个目的是提供一种电致发光显示器件，其能够改善目前的电致发光显示器件中存在的以绿色为主的画面和以红光为主的画面的色度视角的现象。
为了解决上述问题，本发明的一个实施方式提供了一种电致发光显示器件，其中包括：基板、薄膜晶体管、平坦层、阳极、第一像素定义层以及黑色光阻。其中所述薄膜晶体管设置于所述基板上；所述平坦层设置于所述薄膜晶体管上；所述阳极间隔设置于所述平坦层上；所述第一像素定义层设置于相邻两个所述阳极之间的所述平坦层上；所述黑色光阻设置于所述第一像素定义层内。
进一步的，其中所述阳极包括主体部和两个侧部，其中所述侧部横向延伸进入所述第一像素定义层中。
进一步的，其中所述黑色光阻的侧部还设置于所述阳极的侧部上。
进一步的，其中所述黑色光阻的形状对应于所述第一像素定义层的形状。
进一步的，其中所述黑色光阻的形状为梯形。
进一步的，其中所述黑色光阻的厚度范围为1-5μm。
进一步的，其中所述电致发光显示器件还包括封装盖板，所述封装盖板设置于所述第一像素定义层上。
进一步的，其中所述封装盖板包括透明盖板或者彩色滤光片盖板中的一种。
进一步的，其中所述电致发光显示器件还包括第二像素定义层，所述第二像素定义层设置于所述第一像素定义层上。
进一步的，其中所述黑色光阻设置于所述第一像素定义层和所述第二像素定义层内。
 有益效果
本发明涉及一种电致发光显示器件，其中所述电致发光显示器件包括黑色光阻，所述黑色光阻设置于像素定义层内。本发明通过在像素与像素之间增加黑色光阻，以此改善以绿色为主的画面和以红光为主的画面的色度视角，从而提升电致发光显示器件的光学性能。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例1的电致发光显示器件的结构示意图。
图2是本发明实施例2的电致发光显示器件的结构示意图。
图3是本发明实施例3的电致发光显示器件的结构示意图。
图4是本发明实施例4的电致发光显示器件的结构示意图。
图中部件标识如下：
100、电致发光显示器件           1、基板
2、薄膜晶体管层                 3、平坦层
4、阳极                         5、第一像素定义层
6、黑色光阻                     7、空穴注入层
8、空穴传输层                   9、发光层
10、电子传输层                  11、电子注入层
12、阴极                        13、封装盖板
14、第二像素定义层
41、主体部                      42、侧部
 本发明的实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的 ，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
实施例1
如图1所示，一种电致发光显示器件100，其中包括：基板1、薄膜晶体管2、平坦层3、阳极4、第一像素定义层5、黑色光阻6、空穴注入层7、空穴传输层8、发光层9、电子传输层10、电子注入层11、阴极12以及封装盖板13。
其中所述基板1可以通过PI（英文全称：polyimide film;聚酰亚胺）涂布机涂布在干净的玻璃基板上，经过高温固化等工艺处理得到的。由于PI薄膜具有优良的耐高低温性、电气绝缘性、粘结性、耐辐射性、耐介质性，由此制成的基板1具有良好的柔韧性。
其中所述薄膜晶体管2设置于所述基板1上；所述平坦层3设置于所述薄膜晶体管2上；所述薄膜晶体管层2和所述平坦层3中设有栅极、源极、漏极。当栅极施加正电压时，在栅极和半导体层之间会产生一个电场，在这个电场的作用下，形成了电子流道，使源极和漏极之间形成导通状态。在栅极施加电压越大，吸引的电子越多，所以导通电流越大。在栅极施加负电压时，源极和漏极之间形成关闭状态。
所述阳极4间隔设置于所述平坦层3上；所述第一像素定义层5设置于相邻两个所述阳极4之间的所述平坦层3上。所述阳极4包括主体部41和两个侧部42，其中所述阳极4的侧部42横向延伸进入所述第一像素定义层5。
其中所述黑色光阻6可以仅仅设置于所述第一像素定义层5内；也可以延伸设置于所述阳极4的侧部42上。本实施例所述的黑色光阻6设置于所述第一像素定义层5内。通过在像素与像素之间增加黑色光阻6，以此改善以绿色为主的画面和以红光为主的画面的色度视角，从而提升电致发光显示器件100的光学性能。
其中所述黑色光阻6包括2个或2个以上的数量。具体的，可以设置于任意像素与像素之间的阳极上，以降低色域，提升电致发光显示器件100的光学性能。
其中所述黑色光阻6的形状对应于所述第一像素定义层5的形状。具体的，可以是图中所示的梯形。
由于现在的生产工艺水平，其中所述黑色光阻6的厚度范围为1-5μm。
其中所述空穴注入层7设置于所述阳极4上；所述空穴传输层8设置于所述空穴注入层7上；所述发光层9设置于所述空穴传输层8上；所述电子传输层10设置于所述发光层9上；所述电子注入层11设置于所述电子传输层10上；所述阴极12设置于所述电子注入层10上。其中所述空穴传输层8控制着空穴的传输，进而控制空穴在发光层中与电子的复合，进而提高发光效率。
其中所述空穴注入层8、空穴传输层9、发光层10可以通过喷墨打印技术制备形成。
其中所述电子传输层10包括无机层、有机层或者无机层和有机层的组合中的一种或多种。其中电子传输层10控制着电子的传输，进而控制电子在发光层中与空穴的复合，进而提高发光效率。
其中所述封装盖板13设置于所述阴极12上。其中所述封装盖板13包括透明盖板或者彩色滤光片盖板中的一种。本实施例中采用的封装盖板为透明盖板。以此达到阻隔水氧入侵的效果，提高电致发光显示器件100的使用寿命。
实施例2
以下仅就本实施例与实施例1之间的相异之处进行说明，而其相同之处则在此不再赘述。
如图2所示，其中所述封装盖板13设置于所述阴极12上。其中所述封装盖板13包括透明盖板或者彩色滤光片盖板中的一种。本实施例中采用的封装盖板为彩色滤光片盖板。一方面，以此达到阻隔水氧入侵的效果，提高电致发光显示器件100的使用寿命；另一方面，采用彩色滤光片封装盖板来提高颜色均匀性，在彩色滤光片之间采用黑色光阻来减少像素的侧向漏光，以改善侧向视角。
实施例3
以下仅就本实施例与实施例1之间的相异之处进行说明，而其相同之处则在此不再赘述。
如图3所示，其中所述电致发光显示器件100还包括第二像素定义层14，所述第二像素定义层14设置于所述第一像素定义层5上，所述黑色光阻6设置于所述第一像素定义层5和所述第二像素定义层14内。具体的，其中所述第二像素定义层14通过半蚀刻掩膜板和半蚀刻曝光工艺制备形成。以此可以提高电致发光显示器件100的膜层平整度。
实施例4
以下仅就本实施例与实施例2之间的相异之处进行说明，而其相同之处则在此不再赘述。
如图4所示，其中所述电致发光显示器件100还包括第二像素定义层14，所述第二像素定义层14设置于所述第一像素定义层5上，所述黑色光阻6设置于所述第一像素定义层5和所述第二像素定义层14内。具体的，其中所述第二像素定义层14通过半蚀刻掩膜板和半蚀刻曝光工艺制备形成。以此可以提高电致发光显示器件100的膜层平整度。
以上对本发明所提供的电致发光显示器件进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种电致发光显示器件，其中包括：
    基板；
    薄膜晶体管，所述薄膜晶体管设置于所述基板上；
    平坦层，所述平坦层设置于所述薄膜晶体管上；
    阳极，所述阳极间隔设置于所述平坦层上；
    第一像素定义层，所述第一像素定义层设置于相邻两个所述阳极之间的所述平坦层上；
    黑色光阻，所述黑色光阻设置于所述第一像素定义层内。
  2. 根据权利要求1所述的电致发光显示器件，其中所述阳极包括主体部和两个侧部，其中所述侧部横向延伸进入所述第一像素定义层中。
  3. 根据权利要求2所述的电致发光显示器件，其中所述黑色光阻的侧部还设置于所述阳极的侧部上。
  4. 根据权利要求1所述的电致发光显示器件，其中所述黑色光阻的形状对应于所述第一像素定义层的形状。
  5. 根据权利要求4所述的电致发光显示器件，其中所述黑色光阻的形状为梯形。
  6. 根据权利要求1所述的电致发光显示器件，其中所述黑色光阻的厚度范围为1-5μm。
  7. 根据权利要求1所述的电致发光显示器件，其中还包括封装盖板，所述封装盖板设置于所述第一像素定义层上。
  8. 根据权利要求7所述的电致发光显示器件，其中所述封装盖板包括透明盖板或者彩色滤光片盖板中的一种。
  9. 根据权利要求1所述的电致发光显示器件，其中 还包括第二像素定义层，所述第二像素定义层设置于所述第一像素定义层上。
  10. 根据权利要求9所述的电致发光显示器件，其中所述黑色光阻设置于所述第一像素定义层和所述第二像素定义层内。
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