WO2021097981A1 - 有机电致发光二极管器件、显示面板及其制备方法 - Google Patents

有机电致发光二极管器件、显示面板及其制备方法 Download PDF

Info

Publication number
WO2021097981A1
WO2021097981A1 PCT/CN2019/126226 CN2019126226W WO2021097981A1 WO 2021097981 A1 WO2021097981 A1 WO 2021097981A1 CN 2019126226 W CN2019126226 W CN 2019126226W WO 2021097981 A1 WO2021097981 A1 WO 2021097981A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
organic electroluminescent
electroluminescent diode
diode device
conductive layer
Prior art date
Application number
PCT/CN2019/126226
Other languages
English (en)
French (fr)
Inventor
袁伟
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US16/626,735 priority Critical patent/US11302887B2/en
Publication of WO2021097981A1 publication Critical patent/WO2021097981A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80523—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/321—Inverted OLED, i.e. having cathode between substrate and anode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the invention relates to the field of display devices, in particular to an organic electroluminescent diode device, a display panel and a preparation method thereof.
  • IJP OLED Ink-Jet Printing Organic Light-Emitting Diode
  • LCD Liquid Crystal Display
  • IJP Because OLED display technology does not require backlight support, its structure is simpler than LCD, and the volume of display products can be thinner and lighter.
  • its working conditions have a series of advantages such as low driving voltage, low energy consumption, and matching with solar cells and integrated circuits. Thanks to IJP OLED devices are all solid-state, non-vacuum devices, which have the characteristics of shock resistance and low temperature resistance (-40°C), so they have a wide range of applications.
  • IJP In the direction of large-size panels, IJP responds to the demand for high-resolution 8K displays
  • the OLED structure has also changed from a bottom-emitting structure to a top-emitting structure.
  • the top-emitting IJP OLED structure One of the most critical problems is the top-emitting IJP.
  • the top electrode In the OLED structure, the top electrode is realized with a thinner cathode material, but the thinner cathode material usually has a larger resistance. Therefore, when the current is turned on, the panel has a serious voltage drop (IR Drop), and when the size of the panel is larger, the voltage drop is more obvious.
  • the terminal input voltage is a fixed value
  • the in-plane voltage will be uneven, resulting in uneven panel brightness during display.
  • the current main solution is to increase the drive chip And through a complex external compensation algorithm to compensate for the unevenness of the panel brightness caused by the pressure drop.
  • how to more effectively improve the structure of the OLED device itself to eliminate the influence of voltage drop is a major problem for OLED panel manufacturers.
  • the IJP OLED structure has a higher operating current density when the panel is lit, which results in a shorter working life of the panel.
  • the operating current must be increased with the increase of the use time, resulting in a significant increase in the source voltage of the thin film transistor, resulting in residual image on the panel (Image Sticking). Therefore, how to solve the problem of image residual is another difficult problem facing various OLED device manufacturers.
  • the purpose of the present invention is to provide an organic electroluminescent diode device, a display panel and a preparation method thereof, so as to solve the problems of electron injection in the organic electroluminescent diode device in the prior art, the uneven brightness of the display screen caused by the voltage drop of the panel, and Problems such as image retention.
  • the present invention provides an organic electroluminescent diode device, which includes a first electrode layer, a conductive layer, an electron injection layer, a light emitting layer, a hole injection layer, and a second electrode layer.
  • the conductive layer is provided on the first electrode layer.
  • the electron injection layer is provided on the conductive layer.
  • the light-emitting layer is provided on the electron injection layer.
  • the hole injection layer is provided on the light-emitting layer.
  • the second electrode layer is provided on the hole injection layer.
  • the organic electroluminescent diode device further includes an electron transport layer and a hole transport layer.
  • the electron transport layer is provided between the electron injection layer and the light-emitting layer.
  • the hole transport layer is provided between the hole injection layer and the light-emitting layer.
  • the organic electroluminescent diode device further includes a light coupling layer, which is provided on a surface of the second electrode layer away from the hole injection layer.
  • the first electrode layer includes a first conductive layer, a second conductive layer, and a reflective electrode layer.
  • the second conductive layer is provided on the first conductive layer.
  • the reflective electrode layer is provided between the first conductive layer and the second conductive layer.
  • the material of the first conductive layer and the second conductive layer is indium tin oxide.
  • the material of the reflective electrode layer is metal.
  • the material of the conductive layer includes metal, alloy and metal nanowire.
  • the present invention also provides a display panel, which includes a substrate, a thin film transistor structure layer, and the organic electroluminescent diode device.
  • the thin film transistor structure layer is arranged on the substrate.
  • the organic electroluminescent diode device is arranged on a surface of the thin film transistor structure layer away from the substrate.
  • the present invention also provides a method for manufacturing a display panel, which includes the following steps: providing a substrate. A thin film transistor structure layer is formed on the substrate. An organic electroluminescent diode device is formed in the thin film transistor structure layer.
  • the step of forming an organic electroluminescent diode in the thin film transistor structure layer includes the following step: forming a first electrode layer in the thin film transistor structure layer.
  • a conductive layer is formed on the first electrode layer by evaporation or inkjet printing process.
  • An electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer are sequentially formed on the conductive layer through an inkjet printing process.
  • the second electrode layer and the light coupling layer are formed on the hole injection layer and the thin film transistor structure layer through a sputtering or evaporation process.
  • the present invention also provides a display device, which includes the above-mentioned display panel.
  • the advantages of the present invention are: the organic electroluminescent diode device and the display panel of the present invention, by adding a conductive layer between the first electrode layer and the electron injection layer of the organic electroluminescent diode device, effectively reduce The barrier gap between the first electrode layer and the electron injection layer increases the electron injection effect.
  • the organic light emitting diode device in the present invention is an inverted OLED device, which will not be affected by the degradation characteristics of the OLED, so that the display panel will not produce the problem of image sticking, and can also solve the problem of the panel voltage drop. The problem of uneven brightness.
  • FIG. 1 is a schematic diagram of a layered structure of a display panel in an embodiment of the present invention
  • Figure 2 is a schematic flow diagram of the preparation method in an embodiment of the present invention.
  • Electron transport layer 140 light-emitting layer 150;
  • Display panel 1000 thin film transistor structure layer 200;
  • the substrate 300 The substrate 300.
  • the part When some part is described as being “on” another part, the part may be directly placed on the other part; there may also be an intermediate part on which the part is placed, And the middle part is placed on another part.
  • a component When a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is indirectly “mounted to” or “connected to” through an intermediate component To" another part.
  • an embodiment of the present invention provides an organic electroluminescent diode device 100.
  • the organic electroluminescent diode device 100 includes a first electrode layer 110, a conductive layer 120, an electron injection layer 130, and an electron transport layer.
  • the first electrode layer 110 is disposed on the substrate 300.
  • the first electrode layer 110 is a totally reflective electrode, which includes a first conductive layer 111, a reflective electrode layer 112 and a second conductive layer 113.
  • the first conductive layer 111 is provided on the substrate 300
  • the reflective electrode layer 112 is provided on a surface of the first conductive layer 111 away from the substrate 300
  • the second conductive layer 113 is provided on the substrate 300.
  • the reflective electrode layer 112 is on a surface away from the first conductive layer 111.
  • the material of the first conductive layer 111 and the second conductive layer 113 is indium tin oxide (ITO) with a thickness of 50-700 ⁇ .
  • ITO indium tin oxide
  • the reflective material is a conductive metal with high stability and reflectivity, such as silver, aluminum, gold, platinum, copper, molybdenum, titanium, and the like.
  • the first conductive layer 111 and the second conductive layer 113 are used to transmit current
  • the reflective electrode layer 112 has a function of reflecting light while transmitting current.
  • the conductive layer 120 is disposed on a surface of the first electrode layer 110 away from the substrate 300, and its material is a metal, alloy or metal nanowire with excellent conductivity, such as silver, aluminum, gold, platinum, copper, Molybdenum, titanium and other metals or alloys with good conductivity.
  • the thickness of the conductive layer 120 ranges from 5 to 500 ⁇ , and it can be prepared by an inkjet printing method or an evaporation method.
  • the conductive layer 120 can effectively reduce the barrier gap between the first electrode layer 110 and the organic electron injection material, and improve the effect of electron injection.
  • the electron injection layer 130 is disposed on a surface of the conductive layer 120 away from the first electrode layer 110, and is made of inorganic materials with a lower vacuum energy level or LUMO (Lowest Unoccupied Molecular Orbital). ) Lower organic materials or organic doping materials, such as zinc oxide, lithium fluoride, (8-hydroxyquinoline)-lithium, calcium fluoride, magnesium fluoride, sodium fluoride, potassium fluoride, fluorine Barium, cesium fluoride, cesium hydroxide, cesium carbonate, zinc magnesium oxide and other alkali metal oxides, alkaline earth metal oxides, alkali metal carbonation products, alkaline earth metal carbonate compounds, alkali metal fluorides, alkaline earth metal fluorides, Alkaline earth metal hydroxides, alkali metal hydroxides.
  • the electron injection layer 130 is used to inject electrons into the light-emitting layer 150.
  • the electron transport layer 140 is disposed on a surface of the electron injection layer 130 away from the conductive layer 120, and is made of organic materials.
  • the electron transport layer 140 has an electron carrier transport function for transporting electrons in the electron injection layer 130 into the light-emitting layer 150.
  • the light-emitting layer 150 is disposed on a surface of the electron transport layer 140 away from the electron injection layer 130, and its material includes a fluorescent material.
  • the light emitting layer 150 may emit one of red light, green light and blue light.
  • the organic electroluminescent diode device 100 realizes self-luminescence through the light-emitting layer 150.
  • the hole transport layer 160 is disposed on a surface of the light-emitting layer 150 away from the electron transport layer 140, and is made of organic materials.
  • the hole transport layer 160 has a hole carrier transport function for transporting holes in the hole injection layer 170 into the light-emitting layer 150.
  • the hole injection layer 170 is disposed on a surface of the hole transport layer 160 away from the light emitting layer 150, and is made of organic materials. The hole injection layer 170 is used to inject holes into the light-emitting layer 150.
  • the second electrode layer 180 is disposed on a surface of the hole injection layer 170 away from the hole transport layer 160, and its preparation material includes a metal with excellent conductivity and a transparent conductive oxide (Transparent Conductive Oxide).
  • a transparent Conductive Oxide Transparent Conductive Oxide
  • TCO Conductive Oxide
  • IZO indium zinc oxide
  • ITO indium tin oxide
  • the light coupling layer 190 is disposed on a surface of the second electrode layer 180 away from the hole injection layer 170, and the light coupling layer 190 contains the light coupling output material, which is used to make the light emitting The light emitted from the layer 150 undergoes optical coupling processing.
  • the electrons in the first electrode layer 110 and the holes in the second electrode layer 180 respectively pass through the electron injection layer 130, the electron transport layer 140, the hole injection layer 170, and the hole transport layer under the action of current and voltage. 160 is converged and combined in the light-emitting layer 150 to excite the fluorescent material in the light-emitting layer 150 to emit light, thereby realizing the display of the picture.
  • An embodiment of the present invention provides a display panel 1000.
  • the display panel 1000 includes a substrate 300, a thin film transistor structure layer 200, and the organic electroluminescent diode device 100 as described above.
  • the substrate 300 may be a glass substrate 300 or a flexible polyimide substrate 300, and the substrate 300 is used to protect the overall structure of the display panel 1000.
  • the thin film transistor structure layer 200 is provided on the substrate 300.
  • the thin film transistor structure layer 200 may be one of a low temperature polysilicon thin film transistor structure, a metal oxide thin film transistor structure, an amorphous silicon thin film transistor structure, and the like. kind or more.
  • the thin film transistor structure layer 200 is used to control the light emission of the organic electroluminescent diode device 100 and provide electrical energy for the organic electroluminescent diode device 100.
  • the organic electroluminescent diode device 100 is provided with the thin film transistor structure layer 200 on a surface away from the substrate 300, and the first electrode layer 110 in the organic electroluminescent diode device 100 and the thin film transistor
  • the structural layer 200 is electrically connected.
  • the embodiment of the present invention also provides a preparation method of the display panel 1000, and the preparation process is shown in FIG. 2, which includes the following steps:
  • the substrate 300 may be one of an insulating substrate 300 such as a glass substrate 300 and a flexible polyimide substrate 300.
  • Step S20) forming the thin film transistor structure layer 200 forming the thin film transistor structure layer 200 by sequentially preparing the devices in the thin film transistor structure layer 200 on the substrate 300.
  • Step S30) forming the organic electroluminescent diode device 100 forming the first electrode layer 110 in the thin film transistor structure through processes such as sputtering, coating photoresist, exposure, development, and stripping photoresist.
  • a conductive layer 120 material with a thickness of 2 nm is prepared on the first electrode layer 110 through an evaporation or inkjet printing process to form the conductive layer 120.
  • an electron injection layer 130 with a thickness of 10 nm, an electron transport layer 140 with a thickness of 20 nm, a light-emitting layer 150 with a thickness of 40 nm, a hole transport layer 160 with a thickness of 20 nm, and a space with a thickness of 15 nm are sequentially formed on the conductive layer 120.
  • the hole injection layer 170 wherein the electron injection layer 130 is made of zinc oxide, the electron transport layer 140 is made of TAZ, and the light emitting layer 150 is made of doped PtOEP (the mass ratio is 20%) 3,7-di-tert-butylcarbazole, the hole transport layer 160 is made of TFB, and the hole injection layer 170 is made of HATCN.
  • a layer of magnesium-silver alloy with a thickness of 15 nm (mass ratio is 1:9) is prepared on the hole injection layer 170 through a sputtering or evaporation process, and the second electrode layer 180 is formed.
  • a TcTa material layer with a thickness of 60 nm is prepared on the second electrode layer 180 through a sputtering or evaporation process to form the light coupling layer 190, and finally the organic electroluminescent diode device 100 is formed.
  • An embodiment of the present invention provides a display device, which includes the display panel 1000.
  • the display device may be any product or component with a display function, such as a liquid crystal display, a mobile phone, a tablet computer, a notebook computer, a digital camera, a navigator, and the like.
  • the organic electroluminescent diode device 100 provided in the embodiment of the present invention is an inverted OLED device, which can increase the utilization rate of organic materials and effectively reduce the manufacturing cost of the panel. Moreover, by adding the conductive layer 120 on the first electrode layer 110, the barrier gap between the first electrode layer 110 and the electron injection layer 130 can be effectively reduced, and the electron injection effect can be effectively increased. In addition, the inverted organic electroluminescent diode device 100 is not affected by the degradation characteristics when driving the gate-source voltage of the thin film transistor, and the drain current is only related to the gate voltage, which can effectively solve the problem of panel image retention.
  • the second electrode layer 180 thereof will be connected to the drain in the thin film transistor structure layer 200.
  • the voltage drop generated by the resistance of the second electrode layer 180 only affects the drain voltage, but the drain voltage is in the electrical saturation region of the thin film transistor structure layer 200.
  • the gate-source voltage is the data input voltage minus the source voltage, so the change in the source voltage has little effect on the gate-source voltage, that is, the change in the drain voltage has little effect on the drain current.
  • the brightness of different positions in the panel can be Uniform display can effectively solve the problem of uneven brightness caused by panel voltage drop.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种有机电致发光二极管器件、显示面板及其制备方法。所述有机电致发光二极管器件中包括第一电极层（110）、导电层（120）、电子注入层（130）、发光层（150）、空穴注入层（170）以及第二电极层（180）。所述导电层（120）设于所述第一电极层（110）和所述电子注入层（130）之间。

Description

有机电致发光二极管器件、显示面板及其制备方法 技术领域
本发明涉及显示器件领域，特别是一种有机电致发光二极管器件、显示面板及其制备方法。
 背景技术
喷墨印刷有机发光二极管（Ink-Jet Printing Organic Light-Emitting Diode，IJP OLED）是一种新型显示技术，其拥有LCD（Liquid Crystal Display，液晶显示器）技术无法比拟的物理优势，具有主动发光，色彩真实，无限对比度，零延迟，透明显示、柔性显示、显示形态自由等特性，是可以替代液晶显示技术的下一代显示技术。IJP OLED显示技术由于不需要背光的支持，结构较LCD更为简单，显示产品体积可以做到更轻薄。而且，它的工作条件具备驱动电压低、能耗低、可与太阳能电池、集成电路等相匹配的一系列优点。由于IJP OLED器件是全固态、非真空器件，具有抗震荡、耐低温（-40℃）等特性，因此应用范围十分广泛。
在大尺寸面板方向，为应对高分辨率8K显示的需求IJP OLED结构也从底发射结构向顶发射结构转变，但目前发展的顶发射IJP OLED结构仍存在不少的问题，最关键的问题之一即顶发射IJP OLED结构中顶电极采用较薄的阴极材料实现，但较薄的阴极材料通常具有较大的电阻，因此在导通电流时，面板存在较严重的压降（IR Drop），并且当面板的尺寸越大，压降越明显，由于终端输入电压为固定值，由此将造成面内电压不均匀，导致显示时面板亮度不均，目前主要解决方法是增加驱动芯片及通过复杂的外部补偿算法来弥补压降所带来的面板亮度不均匀。但是，如何通过更有效的改善OLED器件本身的结构以消除压降的影响是目前OLED面板制造商的一大难题。
同时IJP OLED结构由于器件本身存在劣化，面板点亮时工作电流密度较大，而导致面板的工作寿命较短。并且因为器件劣化，在相同的亮度下，随使用时间增加必须加大工作电流，导致薄膜晶体管的源极电压显著增加，造成面板影像残余（Image Sticking）。因此如何解决影像残余问题也是摆在各OLED器件制造商面前的另一难题。
 技术问题
本发明的目的是提供一种有机电致发光二极管器件、显示面板及其制备方法，以解决现有技术中有机电致发光二极管器件中电子注入困难、面板压降导致的显示画面亮度不均以及影像残余等问题。
 技术解决方案
为实现上述目的，本发明提供一种有机电致发光二极管器件，其包括第一电极层、导电层、电子注入层、发光层、空穴注入层以及第二电极层。
其中，所述导电层设于所述第一电极层上。所述电子注入层设于所述导电层上。所述发光层设于所述电子注入层上。所述空穴注入层设于所述发光层上。所述第二电极层设于所述空穴注入层上。
进一步地，所述有机电致发光二极管器件中还包括电子传输层和空穴传输层。所述电子传输层设于所述电子注入层和所述发光层之间。所述空穴传输层设于所述空穴注入层和所述发光层之间。
进一步地，有机电致发光二极管器件中还包括光耦合层，其设于所述第二电极层上远离所述空穴注入层的一表面上。
进一步地，所述第一电极层包括第一导电层、第二导电层和反射电极层。所述第二导电层设于所述第一导电层上。所述反射电极层设于所述第一导电层和所述第二导电层之间。
进一步地，所述第一导电层和所述第二导电层的材料为氧化铟锡。所述反射电极层的材料为金属。
进一步地，所述导电层的材料包括金属、合金以及金属纳米线。
本发明中还提供了一种显示面板，其包括基板、薄膜晶体管结构层以及所述有机电致发光二极管器件。所述薄膜晶体管结构层设于所述基板上。所述有机电致发光二极管器件设于所述薄膜晶体管结构层远离所述基板的一表面上。
本发明中还提供了一种显示面板的制备方法，其包括以下步骤：提供一基板。在所述基板上形成薄膜晶体管结构层。在所述薄膜晶体管结构层内形成有机电致发光二极管器件。
进一步地，在所述薄膜晶体管结构层内形成有机电致发光二极管步骤中包括以下步骤：在所述薄膜晶体管结构层内形成第一电极层。在所述第一电极层上通过蒸镀或喷墨打印工艺形成导电层。在所述导电层上通过喷墨打印工艺依次形成电子注入层、电子传输层、发光层、空穴传输层以及空穴注入层。在所述空穴注入层和所述薄膜晶体管结构层上通过溅镀或蒸镀工艺形成所述第二电极层和光耦合层。
本发明中还提供了一种显示装置，其包括如上所述的显示面板。
 有益效果
本发明的优点是：本发明的一种有机电致发光二极管器件及显示面板，通过在所述有机电致发光二极管器件的第一电极层和电子注入层之间增加一导电层，有效的降低第一电极层与电子注入层的势垒差距，从而增加电子注入效果。并且，本发明中的有机发光二极管器件为倒置型OLED器件，其不会受到OLED劣化特性的影响，从而所述显示面板也不会产生影像残影的问题，并且还可以解决由面板压降而产生的亮度不均的问题。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例中显示面板的层状结构示意图；
图2为本发明实施例中制备方法的流程示意图。
图中部件表示如下：
有机电致发光二极管器件100；
第一电极层110；第一导电层111；
反射电极层112；第二导电层113；
导电层120；电子注入层130；
电子传输层140；发光层150；
空穴传输层160；空穴注入层170；
第二电极层180；光耦合层190；
显示面板1000；薄膜晶体管结构层200；
基板300。
 本发明的实施方式
以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。
此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。
当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。
本发明实施例中提供了一种有机电致发光二极管器件100，如图1所示，所述有机电致发光二极管器件100包括第一电极层110、导电层120、电子注入层130、电子传输层140、发光层150、空穴传输层160、空穴注入层170、第二电极层180以及光耦合层190。
所述第一电极层110设于所述基板300上。所述第一电极层110为全反射电极，其包括一第一导电层111、一反射电极层112和一第二导电层113。所述第一导电层111设于所述基板300上，所述反射电极层112设于所述第一导电层111远离所述基板300的一表面上，所述第二导电层113设于所述反射电极层112远离所述第一导电层111的一表面上。所述第一导电层111和所述第二导电层113的材料为氧化铟锡（ITO），其厚度为50-700A。所述反射的材料为稳定性高且具有反射性的导电金属，例如银、铝、金、铂金、铜、钼、钛等。其中，所述第一导电层111和所述第二导电层113用于传输电流，所述反射电极层112在传输电流的同时具有反射光线的作用。
所述导电层120设于所述第一电极层110远离所述基板300的一表面上，其材料为导电性能优异的金属、合金或金属纳米线，例如银、铝、金、铂金、铜、钼、钛等导电性佳的金属或合金。所述导电层120的厚度范围为5-500A，其可以通过喷墨打印法或蒸镀法制备而成。所述导电层120可以有效的降低所述第一电极层110与有机电子注入材料的势垒差距，提高电子注入的效果。
所述电子注入层130设于所述导电层120远离所述第一电极层110的一表面上，其由具有较低真空能级的无机材料或LUMO（Lowest Unoccupied Molecular Orbital，最低未占分子轨道）较低的有机材料或有机掺杂材料制备而成，例如氧化锌、氟化锂、(8-羟基喹啉)-锂、氟化钙、氟化镁、氟化钠、氟化钾、氟化钡、氟化铯、氢氧化铯、碳酸铯、氧化锌镁等碱金属氧化物、碱土金属氧化物、碱金属碳酸化和物、碱土金属碳酸化合物、碱金属氟化物、碱土金属氟化物、碱土金属氢氧化物、碱金属氢氧化物。所述电子注入层130用于将电子注入至所述发光层150内。
所述电子传输层140设于所述电子注入层130远离所述导电层120的一表面上，其由有机材料制备而成。所述电子传输层140具有电子载流子传输功能，用于将所述电子注入层130中的电子传输至所述发光层150内。
所述发光层150设于所述电子传输层140远离所述电子注入层130的一表面上，其材料中包含荧光材料。所述发光层150中可以发出红光、绿光和蓝光中的一种。所述有机电致发光二极管器件100通过所述发光层150实现自发光。
所述空穴传输层160设于所述发光层150远离所述电子传输层140的一表面上，其由有机材料制备而成。所述空穴传输层160具有空穴载流子传输功能，用于将所述空穴注入层170中的空穴传输至所述发光层150内。
所述空穴注入层170设于所述空穴传输层160远离所述发光层150的一表面上，其由有机材料制备而成。所述空穴注入层170用于将空穴注入所述发光层150中。
所述第二电极层180设于所述空穴注入层170远离所述空穴传输层160的一表面上，其制备材料中包含导电性优异的金属和透明导电氧化物（Transparent Conductive Oxide，TCO）中的一种或多种，例如氧化铟锌（IZO），氧化铟锡（ITO）等。
所述光耦合层190设于所述第二电极层180远离所述空穴注入层170的一表面上，所述光耦合层190中包含所述光耦输出材料，其用于将所述发光层150发出的光线进行光耦合处理。
所述第一电极层110中的电子和所述第二电极层180中的空穴在电流电压的作用下分别通过电子注入层130、电子传输层140、空穴注入层170以及空穴传输层160汇聚在所述发光层150内并结合，激发所述发光层150中的荧光材料发光，从而实现画面的显示。
本发明实施例中提供了一种显示面板1000，如图1所示，所示显示面板1000中包括基板300、薄膜晶体管结构层200以及如上所述的有机电致发光二极管器件100。
其中，所述基板300可以为玻璃基板300或柔性聚酰亚胺基板300，所述基板300用于保护所述显示面板1000的整体结构。所述薄膜晶体管结构层200设于所述基板300上，所述薄膜晶体管结构层200可以为低温多晶硅型薄膜晶体管结构、金属氧化物型薄膜晶体管结构、非晶硅薄膜晶体管结构等结构中的一种或多种。所述薄膜晶体管结构层200用于控制所述有机电致发光二极管器件100的发光以及为所述有机电致发光二极管器件100提供电能。所述有机电致发光二极管器件100设有所述薄膜晶体管结构层200远离所述基板300的一表面上，并且所述有机电致发光二极管器件100中的第一电极层110与所述薄膜晶体管结构层200电连接。
本发明实施例中还提供了所述显示面板1000的制备方法，其制备流程如图2所示，其包括以下步骤：
步骤S10）提供一基板300：所述基板300可以为玻璃基板300、柔性聚酰亚胺基板300等绝缘基板300中的一种。
步骤S20）形成薄膜晶体管结构层200：在所述基板300上通过依次制备所述薄膜晶体管结构层200中的器件，形成所述薄膜晶体管结构层200。
步骤S30）形成所述有机电致发光二极管器件100：在所述薄膜晶体管结构内通过溅射、涂布光阻、曝光、显影、剥离光阻等制程形成所述第一电极层110。在所述第一电极层110上通过蒸镀或喷墨打印工艺制备一层厚度为2nm的导电层120材料，形成所述导电层120。在所述导电层120上通过喷墨打印工艺依次形成10nm厚度的电子注入层130、20nm厚度的电子传输层140、40nm厚度的发光层150、20nm厚度的空穴传输层160以及15nm厚度的空穴注入层170，其中所述电子注入层130的材料采用的氧化锌，所述电子传输层140的材料采用的是TAZ，所述发光层150的材料采用的是掺杂有PtOEP（质量比为20%）的3,7-二叔丁基咔唑，所述空穴传输层160的材料采用的是TFB，所述空穴注入层170采用的材料是HATCN。在所述空穴注入层170上通过溅镀或蒸镀工艺制备一层15nm厚度的镁银合金（质量比为1:9），形成所述第二电极层180。所述第二电极层180上通过溅镀或蒸镀工艺制备一层60nm厚度的TcTa材料层，形成所述光耦合层190，最终形成所述有机电致发光二极管器件100。
本发明实施例中提供了一种显示装置，其包括所述显示面板1000。所述显示装置可以为液晶显示器、手机、平板电脑、笔记本电脑、数码相机、导航仪等任何具有显示功能的产品或者部件。
本发明实施例中所提供的一种有机电致发光二极管器件100为倒置型OLED器件，其可以提高有机材料使用率，有效降低面板制作成本。并且，通过在其第一电极层110上增加导电层120，可以有效的降低第一电极层110与电子注入层130的势垒差距，有效增加电子注入效果。并且，倒置型的有机电致发光二极管器件100驱动薄膜晶体管中的栅源电压时不会受到劣化特性影响，而漏极电流只与栅极电压有关，可以有效解决了面板影像残余的问题。同时，由于所述有机电致发光二极管器件100为倒置型，其第二电极层180会与薄膜晶体管结构层200中的漏极相连接。当电流导通时，由第二电极层180电阻产生的压降只影响漏极电压，但漏极电压处于薄膜晶体管结构层200中电性的饱和区。而栅源电压为数据输入电压减去源极电压，因此源极电压变化对栅源电压影响很小，即漏极电压的变化对漏极电流影响较小，此时面板内不同位置的亮度可均匀显示，可以有效解决面板压降所产生的亮度不均匀的问题。
虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。

Claims (10)

  1. 一种有机电致发光二极管器件，其包括：
    第一电极层；
    导电层，设于所述第一电极层上；
    电子注入层，设于所述导电层上；
    发光层，设于所述电子注入层上；
    空穴注入层，设于所述发光层上；
    第二电极层，设于所述空穴注入层上。
  2. 如权利要求1所述的有机电致发光二极管器件，其还包括：
    电子传输层，设于所述电子注入层和所述发光层之间；
    空穴传输层，设于所述空穴注入层和所述发光层之间。
  3. 如权利要求1所述的有机电致发光二极管器件，其中，还包括：
    光耦合层，设于所述第二电极层上远离所述空穴注入层的一表面上。
  4. 如权利要求1所述的有机电致发光二极管器件，其中，所述第一电极层包括：
    第一导电层；
    第二导电层，设于所述第一导电层上；
    反射电极层，设于所述第一导电层和所述第二导电层之间。
  5. 如权利要求4所述的有机电致发光二极管器件，其中，
    所述第一导电层和所述第二导电层的材料为氧化铟锡；
    所述反射电极层的材料为金属。
  6. 如权利要求1所述的有机电致发光二极管器件，其中，所述导电层的材料包括金属、合金以及金属纳米线。
  7. 一种显示面板，其包括：
    基板；
    薄膜晶体管结构层，设于所述基板上；
    如权利要求1所述的有机电致发光二极管器件，设于所述薄膜晶体管结构层上。
  8. 一种如权利要求7所述的显示面板的制备方法，其包括以下步骤：
    提供一基板；
    在所述基板上形成薄膜晶体管结构层；
    在所述薄膜晶体管结构层上形成有机电致发光二极管器件。
  9. 如权利要求8所述的制备方法，其中，在所述薄膜晶体管结构层上形成有机电致发光二极管步骤中包括以下步骤：
    在所述薄膜晶体管结构层内形成第一电极层；
    在所述第一电极层上通过蒸镀或喷墨打印工艺形成导电层；
    在所述导电层上通过喷墨打印工艺依次形成电子注入层、电子传输层、发光层、空穴传输层以及空穴注入层；
    在所述空穴注入层和所述薄膜晶体管结构层上通过溅镀或蒸镀工艺形成所述第二电极层和光耦合层。
  10.     一种显示装置，其包括如权利要求7所述的显示面板。
PCT/CN2019/126226 2019-11-22 2019-12-18 有机电致发光二极管器件、显示面板及其制备方法 WO2021097981A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/626,735 US11302887B2 (en) 2019-11-22 2019-12-18 Organic electroluminescent diode device having light-emitting layer disposed on electron injection layer, display panel, and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201911154101.3 2019-11-22
CN201911154101.3A CN110931650A (zh) 2019-11-22 2019-11-22 有机电致发光二极管器件、显示面板及其制备方法

Publications (1)

Publication Number Publication Date
WO2021097981A1 true WO2021097981A1 (zh) 2021-05-27

Family

ID=69851600

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/126226 WO2021097981A1 (zh) 2019-11-22 2019-12-18 有机电致发光二极管器件、显示面板及其制备方法

Country Status (3)

Country Link
US (1) US11302887B2 (zh)
CN (1) CN110931650A (zh)
WO (1) WO2021097981A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111710697A (zh) * 2020-06-04 2020-09-25 深圳市华星光电半导体显示技术有限公司 一种oled器件及其制备方法、双面显示面板
CN118076135A (zh) * 2022-11-22 2024-05-24 广东聚华新型显示研究院 复合电极及其制备方法、发光器件、显示装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137881A (zh) * 2011-11-22 2013-06-05 海洋王照明科技股份有限公司 有机电致发光装置及其制备方法
CN103811669A (zh) * 2012-11-09 2014-05-21 上海天马微电子有限公司 有机发光器件、有机发光二极管显示装置及制造方法
CN104201290A (zh) * 2014-08-22 2014-12-10 上海和辉光电有限公司 倒置型有机电致发光结构
US20160096967A1 (en) * 2014-10-03 2016-04-07 C3Nano Inc. Property enhancing fillers for transparent coatings and transparent conductive films
CN106129263A (zh) * 2016-07-22 2016-11-16 深圳市华星光电技术有限公司 Oled显示器件及其制作方法
CN106549113A (zh) * 2017-01-16 2017-03-29 上海天马有机发光显示技术有限公司 一种有机发光显示面板及装置
CN106784387A (zh) * 2017-01-16 2017-05-31 京东方科技集团股份有限公司 一种有机发光二极管、显示基板及显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4373086B2 (ja) * 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
KR100810640B1 (ko) * 2007-03-07 2008-03-06 삼성에스디아이 주식회사 유기전계발광표시장치
JP2010192413A (ja) * 2009-01-22 2010-09-02 Sony Corp 有機電界発光素子および表示装置
CN103165816A (zh) * 2011-12-14 2013-06-19 海洋王照明科技股份有限公司 一种倒置顶发射有机电致发光二极管及其制备方法
JP6510223B2 (ja) * 2014-12-11 2019-05-08 株式会社Ｊｏｌｅｄ 有機ｅｌ素子および有機ｅｌ素子の製造方法
CN109148725B (zh) * 2018-08-30 2021-02-26 京东方科技集团股份有限公司 发光器件、像素单元、像素单元的制备方法和显示装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137881A (zh) * 2011-11-22 2013-06-05 海洋王照明科技股份有限公司 有机电致发光装置及其制备方法
CN103811669A (zh) * 2012-11-09 2014-05-21 上海天马微电子有限公司 有机发光器件、有机发光二极管显示装置及制造方法
CN104201290A (zh) * 2014-08-22 2014-12-10 上海和辉光电有限公司 倒置型有机电致发光结构
US20160096967A1 (en) * 2014-10-03 2016-04-07 C3Nano Inc. Property enhancing fillers for transparent coatings and transparent conductive films
CN106129263A (zh) * 2016-07-22 2016-11-16 深圳市华星光电技术有限公司 Oled显示器件及其制作方法
CN106549113A (zh) * 2017-01-16 2017-03-29 上海天马有机发光显示技术有限公司 一种有机发光显示面板及装置
CN106784387A (zh) * 2017-01-16 2017-05-31 京东方科技集团股份有限公司 一种有机发光二极管、显示基板及显示装置

Also Published As

Publication number Publication date
CN110931650A (zh) 2020-03-27
US11302887B2 (en) 2022-04-12
US20210336192A1 (en) 2021-10-28

Similar Documents

Publication Publication Date Title
KR100885843B1 (ko) 유기전계발광 표시소자 및 그 제조방법
US9450028B2 (en) Organic light-emitting device and image display system employing the same
US9118033B2 (en) Organic light-emitting diode and display device employing the same
JP2005310782A (ja) 有機発光ダイオードを用いたディスプレイパネル
CN1994024A (zh) 发光元件和发光器件
WO2015043269A1 (zh) Oled像素结构和oled显示装置
WO2020019388A1 (zh) 显示模组及电子装置
KR20080054626A (ko) 유기 전계발광표시소자 및 그 제조방법
US20070057881A1 (en) Transflective display having an OLED region and an LCD region
KR20160039704A (ko) 유기 발광 표시 장치
WO2020248348A1 (zh) 一种显示面板及其显示装置
WO2015096310A1 (zh) 一种oled阵列基板的对置基板及其制备方法、显示装置
WO2020215434A1 (zh) 一种 oled 器件及其制备方法
US11302887B2 (en) Organic electroluminescent diode device having light-emitting layer disposed on electron injection layer, display panel, and manufacturing method thereof
JP2006221178A (ja) 表示装置
JP2013207010A (ja) 発光素子、発光素子の製造方法、表示装置および照明装置
US10964755B2 (en) Organic light emitting diode panel including light emitting units and color filter layer, method for manufacturing the same, and display device
KR100844004B1 (ko) 유기전계발광 소자용 투명 도전막의 제조 방법
US20240021133A1 (en) Display panel and display device
KR20090065920A (ko) 유기전계발광표시장치
CN110931524A (zh) 显示面板及其制备方法、显示装置
US20070164665A1 (en) Double-sided organic electro-luminescent device
WO2023206674A1 (zh) 有机发光显示面板和有机发光显示装置
KR20090031148A (ko) 전계발광소자
US20040027058A1 (en) Organic electro luminescent display device and fabricating method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19953220

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19953220

Country of ref document: EP

Kind code of ref document: A1