WO2020248348A1 - 一种显示面板及其显示装置 - Google Patents

一种显示面板及其显示装置 Download PDF

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Publication number
WO2020248348A1
WO2020248348A1 PCT/CN2019/099249 CN2019099249W WO2020248348A1 WO 2020248348 A1 WO2020248348 A1 WO 2020248348A1 CN 2019099249 W CN2019099249 W CN 2019099249W WO 2020248348 A1 WO2020248348 A1 WO 2020248348A1
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WIPO (PCT)
Prior art keywords
layer
film layer
display panel
substrate
thin film
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PCT/CN2019/099249
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English (en)
French (fr)
Inventor
郑颖
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/623,121 priority Critical patent/US11152593B1/en
Publication of WO2020248348A1 publication Critical patent/WO2020248348A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0264—Details of the structure or mounting of specific components for a camera module assembly
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0266—Details of the structure or mounting of specific components for a display module assembly

Definitions

  • the present invention relates to the field of display technology, in particular to a display panel and a display device thereof.
  • OLED Organic Light-Emitting Diode
  • OLED organic electric laser display device
  • organic light emitting semiconductor organic light emitting semiconductor
  • the basic structure of OLED is a thin, transparent, semi-conducting indium tin oxide (ITO) connected to the positive electrode of electricity, plus another metal-faced cathode, wrapped in a sandwich structure.
  • the entire structure layer includes: hole transport layer (HTL), light emitting layer (EL) and electron transport layer (ETL).
  • HTL hole transport layer
  • EL light emitting layer
  • ETL electron transport layer
  • the excited state is unstable in the normal environment.
  • the excitons in the excited state recombine and transfer energy to the luminescent material, making it transition from the ground state energy level to the excited state.
  • the excited state energy generates photons through the radiation relaxation process and releases light It can produce light, and the three primary colors of red, green and blue are produced according to different formulas, which constitute the basic colors.
  • OLED the characteristic of OLED is that it emits light by itself, unlike the thin film transistor liquid crystal display device (English full name: Thin The film transistor-liquid crystal display (TFT-LCD for short) needs backlight, so the visibility and brightness are high.
  • OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption, and extremely high response speed. It has become One of the most important display technologies today is gradually replacing TFT-LCD is expected to become the next-generation mainstream display technology after LCD.
  • An object of the present invention is to provide a display panel and a display device thereof, which can solve the problems that the current display panel limits the display area and cannot achieve a full screen.
  • an embodiment of the present invention provides a display panel, which defines a display area, which includes a substrate, an antireflection film layer, a thin film transistor layer, and an encapsulation layer.
  • the anti-reflection film layer is disposed on the substrate; the thin film transistor layer is disposed on the anti-reflection film layer; the packaging layer is disposed on the thin film transistor layer.
  • the surface of the encapsulation layer of the display area away from the substrate is partially recessed downward until the surface of the antireflection film layer facing the thin film transistor layer forms a groove.
  • the shape of the groove includes one of a rectangle and an inverted trapezoid.
  • grooves include two or more than two.
  • the antireflection coating layer is formed on the substrate through an ion beam assisted deposition process or a chemical deposition process.
  • the antireflection film layer includes a first film layer, a second film layer and a third film layer, wherein the first film layer is disposed on the substrate; wherein the second film layer is The refractive index of is greater than the refractive index of the first film layer and the third film layer to incident light, and the refractive index of the first film layer to incident light is greater than the refractive index of the third film layer to incident light.
  • the material used for the first film layer is Al2O3; the material used for the second film layer is ZrO2; and the material used for the third film layer is SiO2.
  • the thickness of the first film layer, the second film layer and the third film layer are all in the range of 100-300 nm.
  • the thickness of the first film layer is in the range of 110-150 nm; the thickness of the second film layer is in the range of 240-280 nm; the thickness of the third film layer is in the range of 110-150 nm.
  • the display panel further includes an anode, a pixel defining layer, a light-emitting layer and a cathode.
  • the anodes are arranged on the thin film transistor layer at intervals; the pixel defining layer is arranged on the thin film transistor layer between two adjacent anodes; the light-emitting layer is arranged on the anode and the pixel defining layer;
  • the cathode is arranged on the light-emitting layer; wherein the encapsulation layer is arranged on the cathode.
  • Another embodiment of the present invention also provides a display device, including: a display panel and a camera arranged under the display panel; wherein the display panel is a display panel related to the present invention; the camera is arranged on the The position under the display panel corresponds to the groove.
  • the present invention relates to a display panel and a display device thereof.
  • the surface of the packaging layer of the display area away from the substrate is partially recessed downward until the antireflection film layer faces the thin film transistor layer
  • a groove is formed on one side surface of the substrate, and a camera is arranged at a position corresponding to the groove on the side of the substrate away from the thin film transistor, so as to reduce the process flow, improve the production yield, and realize a full screen.
  • the present invention also adds an anti-reflection coating to increase the pass rate at the groove and avoid the phenomenon that the camera is difficult to image.
  • FIG. 1 is a schematic diagram of the structure of the display panel of the present invention.
  • Fig. 2 is a schematic diagram of the structure of the display device of the present invention.
  • Fig. 3 is a schematic plan view of the display panel of the present invention.
  • Display panel 200 ⁇ Camera
  • the component can be directly placed on the other component; there may also be an intermediate component on which the component is placed , And the intermediate component is placed on another component.
  • a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is “installed to” or “connected to” through an intermediate component Another component.
  • a display panel 100 defines a display area, which includes: a substrate 1, an antireflection coating layer 2, a thin film transistor layer 3, an anode 4, a pixel definition layer 5, a light emitting layer 6, a cathode 7, and Encapsulation layer 8.
  • the substrate 1 includes a first substrate 11, an intermediate layer 12 and a second substrate 13.
  • the thickness of the first substrate 11 and the second substrate 13 are both 6-10 ⁇ m. If the thickness range of the first substrate 11 and the second substrate 13 is less than 6 ⁇ m, the production cost will increase due to production process problems; if the thickness of the first substrate 11 and the second substrate 13 is If the range is greater than 10 ⁇ m, the overall thickness of the display panel 100 will increase, which will affect the appearance of the product and the feel in use.
  • Polyimide can be selected as the constituent material of the first substrate 11 and the second substrate 13, and the first substrate 11 and the second substrate 13 made therefrom have good flexibility.
  • the material of the intermediate layer 12 can be SiO2, SiNx, or a laminated structure of SiO2 and SiNx. The intermediate layer 12 thus prepared has good water and oxygen resistance and can also improve the first substrate. The reliability between 11 and the second substrate 13.
  • the thin film transistor layer 3 is disposed on the substrate 1, and the antireflection film layer 2 is disposed between the substrate 1 and the thin film transistor layer 3.
  • the antireflection film layer 2 includes: a first film layer 21, a second film layer 22 and a third film layer 23.
  • the first film layer 21 is disposed on the substrate 1, the second film layer 22 is disposed on the first film layer 21, and the third film layer 23 is disposed on the second film layer 22 on.
  • the antireflection coating layer 2 can be formed on the substrate 1 through an ion beam assisted deposition process or a chemical deposition process.
  • the refractive index of the second film layer 22 to incident light is greater than the refractive index of the first film layer 21 and the third film layer 23 to incident light, and the refractive index of the first film layer 21 to incident light is greater than that of the third film layer.
  • the refractive index of the layer 23 to incident light is.
  • the composition material of the first film layer 21 is Al2O3; the composition material of the second film layer 22 is ZrO2; and the composition material of the third film layer 21 is SiO2. Therefore, the ⁇ /4- ⁇ /2- ⁇ /4 three-layer anti-reflection film structure can be used to effectively improve the transmittance of the display panel 100.
  • the anti-reflection film layer 2 can also have a good water and oxygen barrier effect. , To prevent the light emitting layer 6 in the display area from being invaded by water vapor to cause display abnormalities.
  • the thickness of the first film layer 21, the second film layer 22 and the third film layer 23 are all in the range of 100-300 nm. Specifically, the thickness of the first film layer 21 is in the range of 110-150 nm; the thickness of the second film layer is in the range of 240-280 nm; the thickness of the third film layer is in the range of 110-150 nm. This can achieve the best effect of increasing the transmittance.
  • the anode 4 is arranged on the thin film transistor layer 3 at intervals; the pixel defining layer 5 is arranged on the thin film transistor layer 3 between two adjacent anodes 4; the light-emitting layer 6 is arranged on the anode 4 and the pixel definition layer 5; the cathode 7 is arranged on the light-emitting layer 6; the encapsulation layer 8 is arranged on the cathode 7.
  • the surface of the encapsulation layer 8 of the display area away from the substrate 1 is partially recessed downward until the surface of the antireflection coating layer 2 facing the thin film transistor layer 3 forms a recess.
  • Slot 9. The shape of the groove 9 may be rectangular or inverted trapezoid. The shape of the groove 9 in this embodiment is rectangular. In the actual production process, the number of grooves 9 can be increased according to actual needs, and it can be 2 or more. In this embodiment, by arranging the groove 9 in the display area of the display panel 100, the display area can be increased to achieve a full screen effect.
  • this embodiment also provides a display device, which includes: the display panel 100 involved in the present invention and a camera 200 arranged under the display panel 100.
  • the camera 200 is arranged at a position corresponding to the groove 9 under the display panel 100. In this way, the display area of the display device can be increased to achieve a full screen effect.
  • the projection area of the groove 9 in the display panel 100 may be larger than the projection of the camera 200, so as to increase the lighting area of the camera 200, improve the imaging effect of the camera 200, and increase customer experience.
  • the number of grooves 9 may include more than two, and the array of grooves 9 is arranged to form the opening area shown by the dotted line in the figure, and the camera 200 corresponds to The opening area is provided, thereby the display effect can also be achieved, and the display area of the display device can be increased to achieve a full screen effect.

Abstract

本发明涉及一种显示面板及其显示装置，一方面，通过在所述显示面板的显示区域的封装层远离所述基板的一侧表面局部向下凹陷直至所述增透膜层朝向所述薄膜晶体管层的一侧表面形成凹槽，在所述基板远离所述薄膜晶体管的一侧对应于所述凹槽的位置处设置摄像头，以此减少工艺流程，提升产能良率，实现全面屏。另一方面，本发明还增加了增透膜层，以此提高凹槽处的通过率，避免摄像头成像困难的现象。

Description

一种显示面板及其显示装置 技术领域
本发明涉及显示技术领域，具体涉及一种显示面板及其显示装置。
 背景技术
OLED(英文全称：Organic Light-Emitting Diode, 简称OLED)器件又称为有机电激光显示装置、有机发光半导体。OLED的基本结构是由一薄而透明具有半导体特性的铟锡氧化物(ITO)与电力之正极相连，再加上另一个金属面阴极，包成如三明治的结构。整个结构层中包括了:空穴传输层(HTL)、发光层(EL)与电子传输层(ETL)。当电力供应至适当电压时，正极空穴与面阴极电荷就会在发光层中结合，在库伦力的作用下以一定几率复合形成处于激发态的激子（电子-空穴对），而此激发态在通常的环境中是不稳定的，激发态的激子复合并将能量传递给发光材料，使其从基态能级跃迁为激发态，激发态能量通过辐射驰豫过程产生光子，释放出光能，产生光亮，依其配方不同产生红、绿和蓝RGB三基色，构成基本色彩。
首先OLED的特性是自己发光，不像薄膜晶体管液晶显示装置（英文全称：Thin film transistor-liquid crystal display，简称TFT-LCD）需要背光，因此可视度和亮度均高。其次OLED具有电压需求低、省电效率高、反应快、重量轻、厚度薄，构造简单，成本低、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点，已经成为当今最重要的显示技术之一，正在逐步替代 TFT-LCD，有望成为继LCD之后的下一代主流显示技术。
 技术问题
由于其便于对外观进行定制化，越来越多的终端厂商将其应用到全面屏和无边框产品中。而全面屏和无边框产品需要更大的发光面积，因此，在实际应用过程中，通常需要在柔性有机发光显示器上设置安装孔，用以在终端设备上预留前置摄像头、听筒和起始键等硬件的安装位置。目前一般是在显示面板的有效显示区域外的非显示区域设置安装孔，这种方式限制了有效显示区域的面积，无法制备全面屏。因此需要寻求一种新型的显示面板及显示装置以解决上述问题。
 技术解决方案
本发明的一个目的是提供一种显示面板及其显示装置，其能够解决目前的显示面板限制了显示区域，无法实现全面屏等问题。
为了解决上述问题，本发明的一个实施方式提供了一种显示面板，其定义有显示区域，其中包括：基板、增透膜层、薄膜晶体管层以及封装层。其中所述增透膜层设置于所述基板上；所述薄膜晶体管层设置于所述增透膜层上；所述封装层设置于所述薄膜晶体管层上。其中所述显示区域的封装层远离所述基板的一侧表面局部向下凹陷直至所述增透膜层朝向所述薄膜晶体管层的一侧表面形成凹槽。
进一步的，其中所述凹槽形状包括矩形、倒立梯形中的一种。
进一步的，其中所述凹槽包括2个或2个以上的数量。
进一步的，其中所述增透膜层通过离子束辅助沉积制程或化学沉积制程形成在所述基板上。
进一步的，其中所述增透膜层包括第一膜层、第二膜层和第三膜层，其中所述第一膜层设置在所述基板上；其中所述第二膜层对入射光的折射率大于第一膜层和第三膜层对入射光的折射率，所述第一膜层对入射光的折射率大于第三膜层对入射光的折射率。
进一步的，其中所述第一膜层采用的材料为Al2O3；所述第二膜层采用的材料为ZrO2；所述第三膜层采用的材料为SiO2。
进一步的，其中所述第一膜层、第二膜层和第三膜层的厚度范围均为100-300nm。
进一步的，其中所述第一膜层的厚度范围为110-150nm；所述第二膜层的厚度范围为240-280nm；所述第三膜层的厚度范围为110-150nm。
进一步的，其中所述显示面板还包括阳极、像素定义层、发光层以及阴极。其中所述阳极间隔设置于所述薄膜晶体管层上；所述像素定义层设置于相邻两阳极之间的所述薄膜晶体管层上；所述发光层设置于所述阳极和像素定义层上；所述阴极设置于所述发光层上；其中所述封装层设置于所述阴极上。
本发明的另一个实施方式还提供了一种显示装置，包括：显示面板和设置在所述显示面板下的摄像头；其中所述显示面板为本发明涉及的显示面板；所述摄像头设置于所述显示面板下对应于所述凹槽的位置处。
 有益效果
本发明涉及一种显示面板及其显示装置，一方面，本发明在所述显示区域的封装层远离所述基板的一侧表面局部向下凹陷直至所述增透膜层朝向所述薄膜晶体管层的一侧表面形成凹槽，在所述基板远离所述薄膜晶体管的一侧对应于所述凹槽的位置处设置摄像头，以此减少工艺流程，提升产能良率，实现全面屏。另一方面，本发明还增加增透膜层，以此提高凹槽处的通过率，避免摄像头成像困难的现象。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明显示面板的结构示意图。
图2是本发明显示装置的结构示意图。
图3是本发明显示面板的平面示意图。
图中部件标识如下：
100、显示面板                   200、摄像头
1、基板                         2、增透膜层
3、薄膜晶体管层                 4、阳极
5、像素定义层                   6、发光层
7、阴极                         8、封装层
9、凹槽                         11、第一衬底
12、中间层                      13、第二衬底
21、第一膜层                    22、第二膜层
23、第三膜层
 本发明的实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的 ，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
实施例1
如图1所示，一种显示面板100，其定义有显示区域，其中包括：基板1、增透膜层2、薄膜晶体管层3、阳极4、像素定义层5、发光层6、阴极7以及封装层8。
其中所述基板1包括：第一衬底11、中间层12以及第二衬底13。其中所述第一衬底11与所述第二衬底13的厚度范围均为6-10μm。如果所述第一衬底11与所述第二衬底13的厚度范围小于6μm，由于生产工艺问题会导致生产成本提高；如果所述第一衬底11与所述第二衬底13的厚度范围大于10μm，会导致显示面板100整体厚度增加，影响产品美观，影响使用手感。其中所述第一衬底11与所述第二衬底13的组成材料可以选择聚酰亚胺，由此制成的所述第一衬底11与所述第二衬底13柔韧性好。其中所述中间层12的组成材料可以是SiO2也可以是SiNx，还可以是SiO2与SiNx的叠层结构，由此制备的所述中间层12阻水氧性能好，还可以提高第一衬底11与第二衬底13之间的信耐性。
其中所述薄膜晶体管层3设置于所述基板1上，所述增透膜层2设置于所述基板1与所述薄膜晶体管层3之间。其中所述增透膜层2包括：第一膜层21、第二膜层22以及第三膜层23。其中所述第一膜层21设置于所述基板1上，所述第二膜层22设置于所述第一膜层21上，所述第三膜层23设置于所述第二膜层22上。其中所述增透膜层2可以通过离子束辅助沉积制程或化学沉积制程形成在所述基板1上。
其中所述第二膜层22对入射光的折射率大于第一膜层21和第三膜层23对入射光的折射率，所述第一膜层21对入射光的折射率大于第三膜层23对入射光的折射率。具体的，所述第一膜层21的组成材料为Al2O3；所述第二膜层22的组成材料为ZrO2；，所述第三膜层21的组成材料为SiO2。由此可以利用λ/4-λ/2-λ/4三层减反射膜结构，有效提高显示面板100的透过率，另外此增透膜层2还可以起到很好的水氧阻隔效果，避免显示区域的发光层6遭水汽入侵产生显示异常。
其中所述第一膜层21、第二膜层22和第三膜层23的厚度范围均为100-300nm。具体的，其中所述第一膜层21的厚度范围为110-150nm；所述第二膜层的厚度范围为240-280nm；所述第三膜层的厚度范围为110-150nm。由此可以达到增加透过率的最佳效果。
其中所述阳极4间隔设置于所述薄膜晶体管层3上；所述像素定义层5设置于相邻两阳极4之间的所述薄膜晶体管层3上；所述发光层6设置于所述阳极4和像素定义层5上；所述阴极7设置于所述发光层6上；所述封装层8设置于所述阴极7上。
本实施例的显示面板100在所述显示区域的封装层8远离所述基板1的一侧表面局部向下凹陷直至所述增透膜层2朝向所述薄膜晶体管层3的一侧表面形成凹槽9。其中所述凹槽9形状可以是矩形也可以是倒立梯形，本实施例所述的凹槽9形状为矩形。实际生产过程中可以根据实际需求，增加凹槽9的数量，可以是2个或2个以上。本实施例通过在显示面板100的显示区域设置凹槽9，可以增大显示面积，达到全面屏效果。
实施例2
以下仅就本实施例与实施例1之间的相异之处进行说明，而其相同之处则在此不再赘述。
如图2所示，本实施方式还提供了一种显示装置，其中包括：本发明涉及的显示面板100以及设置在所述显示面板100下的摄像头200。其中所述摄像头200设置于所述显示面板100下对应于所述凹槽9的位置处。如此可以增加显示装置的显示面积，达到全面屏效果。
具体的，所述显示面板100中的凹槽9的投影面积可以大于所述摄像头200的投影，以此增加摄像头200的采光面积，提高摄像头200的成像效果，增加客户体验度。
如图3所示，在实际生产过程中，所述凹槽9可以包括2个以上的数量，并且所述凹槽9阵列排布形成图中虚线所示的开口区域，所述摄像头200对应于此开口区域设置，由此同样可以达到显示效果，并且可以增加显示装置的显示面积，达到全面屏效果。
以上对本发明所提供的显示面板及其显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种显示面板，其定义有显示区域，其中包括：
    基板；
    增透膜层，所述增透膜层设置于所述基板上；
    薄膜晶体管层，所述薄膜晶体管层设置于所述增透膜层上；以及
    封装层，所述封装层设置于所述薄膜晶体管层上；
    其中所述显示区域的封装层远离所述基板的一侧表面局部向下凹陷直至所述增透膜层朝向所述薄膜晶体管层的一侧表面形成凹槽。
  2. 根据权利要求1所述的显示面板，其中所述凹槽形状包括矩形、倒立梯形中的一种。
  3. 根据权利要求1所述的显示面板，其中所述凹槽包括2个或2个以上的数量。
  4. 根据权利要求1所述的显示面板，其中所述增透膜层通过离子束辅助沉积制程或化学沉积制程形成在所述基板上。
  5. 根据权利要求1所述的显示面板，其中所述增透膜层包括第一膜层、第二膜层和第三膜层，其中所述第一膜层设置在所述基板上；其中所述第二膜层对入射光的折射率大于第一膜层和第三膜层对入射光的折射率，所述第一膜层对入射光的折射率大于第三膜层对入射光的折射率。
  6. 根据权利要求5所述的显示面板，其中所述第一膜层采用的材料为Al2O3；所述第二膜层采用的材料为ZrO2；所述第三膜层采用的材料为SiO2。
  7. 根据权利要求5所述的显示面板，其中所述第一膜层、第二膜层和第三膜层的厚度范围均为100-300nm。
  8. 根据权利要求5所述的显示面板，其中所述第一膜层的厚度为110-150nm；所述第二膜层的厚度为240-280nm；所述第三膜层的厚度为110-150nm。
  9. 根据权利要求1所述的显示面板，其中还包括：
    阳极，所述阳极间隔设置于所述薄膜晶体管层上；
    像素定义层，所述像素定义层设置于相邻两阳极之间的所述薄膜晶体管层上；
    发光层，所述发光层设置于所述阳极和像素定义层上；以及
    阴极，所述阴极设置于所述发光层上；
    其中所述封装层设置于所述阴极上。
  10. 一种显示装置，包括：显示面板和设置在所述显示面板下的摄像头；其中所述显示面板为权利要求1所述的显示面板；所述摄像头设置于所述显示面板下对应于所述凹槽的位置处。
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