US20210328182A1 - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- US20210328182A1 US20210328182A1 US16/623,121 US201916623121A US2021328182A1 US 20210328182 A1 US20210328182 A1 US 20210328182A1 US 201916623121 A US201916623121 A US 201916623121A US 2021328182 A1 US2021328182 A1 US 2021328182A1
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- 239000010409 thin film Substances 0.000 claims abstract description 23
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical group O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000005234 chemical deposition Methods 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 238000007735 ion beam assisted deposition Methods 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 5
- 230000005281 excited state Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 229920001721 polyimide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 230000036632 reaction speed Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H01L51/5253—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H01L27/3234—
-
- H01L27/3246—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/026—Details of the structure or mounting of specific components
- H04M1/0264—Details of the structure or mounting of specific components for a camera module assembly
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/026—Details of the structure or mounting of specific components
- H04M1/0266—Details of the structure or mounting of specific components for a display module assembly
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
Definitions
- the present disclosure relates to a display technical field, and more particularly to a display panel and a display device.
- An OLED (Organic Light-Emitting Diode) device is also called an organic electro-laser display device and an organic light-emitting semiconductor.
- the basic structure of the OLED is a sandwich-like structure constructed by a thin transparent indium tin oxide (ITO) with semiconductor properties connected to an anode of a power and a metal surface cathode.
- the whole structure includes a hole transport layer (HTL), an electroluminescent layer (EL) and an electron transport layer (ETL).
- HTL hole transport layer
- EL electroluminescent layer
- ETL electron transport layer
- the excited state is unstable in normal environment.
- the exciton combination in the excited state can transfer energy to the luminescent material. It can enable the luminescent material to transition from a ground state to the excited state.
- the energy of the excited state can produce photons through radiation relaxation process; the photons release light energy and produce brightness. According to its formula, it produces three basic colors (RGB): red, green and blue, which constitute the basic color.
- the OLED is characterized by self-luminescence.
- the OLED is unlike a thin film transistor-liquid crystal display device, which requires backlight, so the visibility and brightness of the OLED are high.
- the OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption and high reaction speed. It has become one of the most important display technologies nowadays. It is gradually replacing TFT-LCD and is expected to become the next generation of mainstream display technology after LCD.
- a flexible organic light-emitting display usually requires to dispose installation holes for reserving hardware installation locations such as a front-facing camera, an earphone and a start key on a terminal device.
- the installation holes are generally disposed in a non-display area outside an effective display area of the display panel. In this way, the area of the effective display area is limited, and the full screen cannot be prepared. Hence, it needs to seek a new display panel and a new display device to solve the above problems.
- One object of the present invention is to provide a display panel and a display device, which can solve the problems that the existed display panel restricts the display area and cannot realize a full screen.
- the present invention provides a display panel, defining a display area and including a substrate, an antireflective film, a thin film transistor layer and a packaging layer.
- the antireflective film is disposed on the substrate;
- the thin film transistor layer is disposed on the antireflective film;
- the packaging layer is disposed on the thin film transistor layer.
- a groove is formed on one side of the packaging layer of the display area away from the substrate, and extends downward to one side of the antireflective film facing a thin film transistor layer.
- groove is rectangular or inverted trapezoidal in shape.
- the number of the groove is two or more.
- the antireflective film is formed on the substrate by an ion beam assisted deposition process or a chemical deposition process.
- the antireflective film includes a first film, a second film and a third film; the first film is formed on the substrate; a refractive index of the second film to an incident light is greater than that of the first film and the third film to the incident light, and a refractive index of the first film to an incident light is greater than that of the third film to the incident light.
- a material of the first film is Al2O3
- a material of the second film is ZrO2
- a material of the third film is SiO2.
- a thickness of the first film is 110-150 nm
- a thickness of the second film is 240-280 nm
- a thickness of the third film is 110-150 nm
- the display panel further includes: anodes, a pixel definition layer, a light emitting layer and a cathode.
- the anodes are arranged at interval on the thin film transistor layer;
- the pixel definition layer is disposed on the thin film transistor layer and located between two adjacent anodes;
- the light emitting layer is disposed on the anodes and the pixel definition layer;
- the cathode is disposed on the light emitting layer.
- the packaging layer is disposed on the cathode.
- the present invention further provides a display device, comprising a display panel and a camera located under the display panel; wherein the display panel is provided by the present invention, and the camera is disposed under the display panel and is corresponding to the groove.
- the present invention relates to the display panel and the display device.
- the groove forms on one side of the packaging layer of the display area away from the substrate, and extends downward to one side of the antireflective film facing the thin film transistor layer; and the camera is disposed on one side of the substrate away from the thin film transistor layer and is corresponding the groove, thereby reducing process flow, improving productivity and yield, and realizing the full screen.
- the present invention also adds the antireflective film to improve the light transmittance at the groove and avoid the phenomenon that the camera is difficult to image.
- FIG. 1 is a structure schematic view of a display panel of the present invention
- FIG. 2 is a structure schematic view of a display device of the present invention.
- FIG. 3 is a plan view of the display panel of the present invention.
- display panel 200 camera 1 substrate 2 antireflective film 3 thin film transistor layer 4 anode 5 pixel definition layer 6 light emitting layer 7 cathode 8 packaging layer 9 groove 11 first underlayer 12 intermediate layer 13 second underlayer 21 first film 22 second film 23 third film
- the component When one component is described as “on another component”, the component may be directly placed on another component; or there exists an intermediate component, the component is placed on the intermediate component, and then the intermediate component is placed on another component.
- the component when one component is described as “installed to” or “connected to” another component, they can be understood as “installed” or “connected” directly; or they can be understood that one component is “installed to” or “connected to” another component through an intermediate component.
- a display panel 100 defines a display area, and includes a substrate 1 , an antireflective film 2 , a thin film transistor layer 3 , anodes 4 , a pixel definition layer 5 , a light emitting layer 6 , a cathode 7 and a packaging layer 8 .
- the substrate 1 includes a first underlayer 11 , an intermediate layer 12 and a second underlayer 13 .
- the thicknesses of the first underlayer 11 and the second underlayer 13 are 6-10 microns ( ⁇ m). If the thicknesses of the first underlayer 11 and the second underlayer 13 are less than 6 ⁇ m, the production cost thereof will increase due to production process problems. If the thicknesses of the first underlayer 11 and the second underlayer 13 are greater than 10 ⁇ m, the overall thickness of the display panel 100 will increase, which affects the beauty of the product and the feel of the use.
- the material of the first underlayer 11 and the second underlayer 13 can be polyimide, and the first underlayer 11 and the second underlayer 13 made from the polyimide have good flexibility.
- the material of the intermediate layer 12 may be SiO2 or SiNx, or a laminated structure of SiO2 and SiNx.
- the prepared intermediate layer 12 has good water and oxygen resistance and can also improve the reliability between the first underlayer 11 and the second underlayer 13 .
- the antireflective film 2 includes a first film 21 , a second film 22 and a third film 23 .
- the first film 21 is disposed on the substrate 1
- the second film 22 is disposed on the first film 21
- the third film 23 is disposed on the second film 22 .
- the antireflective film 2 can be formed on the substrate 1 by an ion beam assisted deposition process or a chemical deposition process.
- a refractive index of the second film 22 to an incident light is greater than that of the first film 21 and the third film 23 to the incident light
- a refractive index of the first film 21 to an incident light is greater than that of the third film 23 to the incident light.
- a material of the first film 21 is Al2O3
- a material of the second film 22 is ZrO2
- a material of the third film 23 is SiO2.
- the transmittance of the display panel 100 can be effectively improved by using the three-layer anti-reflection film structure of ⁇ /4- ⁇ /2-2 ⁇ /4.
- the antireflective film 2 can also provide a good water oxygen barrier effect, to avoid an abnormal display of the display area of the light emitting layer 6 caused by water vapor intrusion.
- thicknesses of the first film 21 , the second film 22 and the third film 23 are 100-300 nm. Specifically, the thickness of the first film 21 is 110-150 nm, the thickness of the second film 22 is 240-280 nm, and the thickness of the third film 23 is 110-150 nm. Thus, the transmittance can be increased and achieve the best effect.
- the anodes 4 are arranged at interval on the thin film transistor layer 3 ; the pixel definition layer 5 is disposed between two adjacent anodes 4 on the thin film transistor layer 3 ; the light emitting layer 6 is disposed on the anodes 4 and the pixel definition layer 5 ; the cathode 7 is disposed on the light emitting layer 6 ; and the packaging layer 8 is disposed on the cathode 7 .
- the display panel 100 of the embodiment disposes a groove 9 , which forms on one side of the packaging layer 8 of the display area away from the substrate 1 , and extends downward to one side of the antireflective film 2 facing the thin film transistor layer 3 .
- the groove 9 can be rectangular or inverted trapezoidal in shape. In the embodiment, the groove 9 is rectangular in shape. In the actual production, according to the actual demand, the number of the groove 9 can be increased to two or more. In the embodiment, by setting the groove 9 in the display area of the display panel 100 , the display area can be increased and the full screen can be achieved.
- the embodiment further provides a display device, which includes the display panel 100 of the present invention and a camera 200 located under the display panel 100 .
- the camera 200 is located under the display panel 100 and is corresponding to the groove 9 .
- the display area can be increased and the full screen can be achieved.
- a projection area of the groove 9 in the display panel 100 can be larger than that of the camera 200 , so as to increase a lighting area of the camera 200 , improve an imaging effect of the camera 200 and increase a customer experience.
- the number of the groove 9 can be increased to two or more.
- the grooves 9 are arranged to form an open area shown by dotted lines in the drawing.
- the camera 200 is corresponding to the open area, thereby achieving the same display effect, increasing the display area, and achieving the full screen effect.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to a display panel and a display device. On the one hand, the display panel disposes a groove, which forms on one side of a packaging layer of a display area away from a substrate, and extends downward to one side of an antireflective film facing a thin film transistor layer; and a camera is disposed on one side of the substrate away from the thin film transistor layer and is corresponding the groove, thereby reducing process flow, improving productivity and yield, and realizing a full screen. On the other hand, the present invention also adds an antireflective film to improve the light transmittance at the groove and avoid the phenomenon that the camera is difficult to image.
Description
- The present disclosure relates to a display technical field, and more particularly to a display panel and a display device.
- An OLED (Organic Light-Emitting Diode) device is also called an organic electro-laser display device and an organic light-emitting semiconductor. The basic structure of the OLED is a sandwich-like structure constructed by a thin transparent indium tin oxide (ITO) with semiconductor properties connected to an anode of a power and a metal surface cathode. The whole structure includes a hole transport layer (HTL), an electroluminescent layer (EL) and an electron transport layer (ETL). When the power is supplied to an appropriate voltage, holes of the anode and electrons of the surface cathode will combine in the electroluminescent layer, and form excitons (electron-hole pairs) in an excited state with a certain probability under the action of a Coulomb force. But the excited state is unstable in normal environment. The exciton combination in the excited state can transfer energy to the luminescent material. It can enable the luminescent material to transition from a ground state to the excited state. The energy of the excited state can produce photons through radiation relaxation process; the photons release light energy and produce brightness. According to its formula, it produces three basic colors (RGB): red, green and blue, which constitute the basic color.
- First of all, the OLED is characterized by self-luminescence. The OLED is unlike a thin film transistor-liquid crystal display device, which requires backlight, so the visibility and brightness of the OLED are high. Secondly, the OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption and high reaction speed. It has become one of the most important display technologies nowadays. It is gradually replacing TFT-LCD and is expected to become the next generation of mainstream display technology after LCD.
- Because the OLED is easy to customize its appearance, more and more terminal manufacturers are applying it to a full screen and borderless product. But the full screen and borderless product requires a larger luminous area. Therefore, in the actual application, a flexible organic light-emitting display usually requires to dispose installation holes for reserving hardware installation locations such as a front-facing camera, an earphone and a start key on a terminal device. At present, the installation holes are generally disposed in a non-display area outside an effective display area of the display panel. In this way, the area of the effective display area is limited, and the full screen cannot be prepared. Hence, it needs to seek a new display panel and a new display device to solve the above problems.
- One object of the present invention is to provide a display panel and a display device, which can solve the problems that the existed display panel restricts the display area and cannot realize a full screen.
- In order to solve the above problems, in one embodiment, the present invention provides a display panel, defining a display area and including a substrate, an antireflective film, a thin film transistor layer and a packaging layer. Wherein, the antireflective film is disposed on the substrate; the thin film transistor layer is disposed on the antireflective film; and the packaging layer is disposed on the thin film transistor layer. Wherein a groove is formed on one side of the packaging layer of the display area away from the substrate, and extends downward to one side of the antireflective film facing a thin film transistor layer.
- Further, wherein the groove is rectangular or inverted trapezoidal in shape.
- Further, wherein the number of the groove is two or more.
- Further, wherein the antireflective film is formed on the substrate by an ion beam assisted deposition process or a chemical deposition process.
- Further, wherein the antireflective film includes a first film, a second film and a third film; the first film is formed on the substrate; a refractive index of the second film to an incident light is greater than that of the first film and the third film to the incident light, and a refractive index of the first film to an incident light is greater than that of the third film to the incident light.
- Further, wherein a material of the first film is Al2O3, a material of the second film is ZrO2, and a material of the third film is SiO2.
- Further, wherein all of thicknesses of the first film, the second film and the third film are 100-300 nm.
- Further, wherein a thickness of the first film is 110-150 nm, a thickness of the second film is 240-280 nm, and a thickness of the third film is 110-150 nm.
- Further, wherein the display panel further includes: anodes, a pixel definition layer, a light emitting layer and a cathode. Wherein, the anodes are arranged at interval on the thin film transistor layer; the pixel definition layer is disposed on the thin film transistor layer and located between two adjacent anodes; the light emitting layer is disposed on the anodes and the pixel definition layer; and the cathode is disposed on the light emitting layer. Wherein, the packaging layer is disposed on the cathode.
- In another embodiment, the present invention further provides a display device, comprising a display panel and a camera located under the display panel; wherein the display panel is provided by the present invention, and the camera is disposed under the display panel and is corresponding to the groove.
- The present invention relates to the display panel and the display device. On the one hand, the groove forms on one side of the packaging layer of the display area away from the substrate, and extends downward to one side of the antireflective film facing the thin film transistor layer; and the camera is disposed on one side of the substrate away from the thin film transistor layer and is corresponding the groove, thereby reducing process flow, improving productivity and yield, and realizing the full screen. On the other hand, the present invention also adds the antireflective film to improve the light transmittance at the groove and avoid the phenomenon that the camera is difficult to image.
- For more clearly illustrating the technical scheme in the embodiment of the present invention, the following text will briefly introduce the accompanying drawings used in the embodiment. It is obvious that the accompanying drawings in the following description are only some embodiments of the present invention. For the technical personnel of the field, other drawings can also be obtained from these drawings without paying creative work.
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FIG. 1 is a structure schematic view of a display panel of the present invention; -
FIG. 2 is a structure schematic view of a display device of the present invention; and -
FIG. 3 is a plan view of the display panel of the present invention. - The components in the figure are identified as follows:
-
100 display panel 200 camera 1 substrate 2 antireflective film 3 thin film transistor layer 4 anode 5 pixel definition layer 6 light emitting layer 7 cathode 8 packaging layer 9 groove 11 first underlayer 12 intermediate layer 13 second underlayer 21 first film 22 second film 23 third film - The preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings, in order to fully introduce the technical contents of the present invention to the technical personnel in the field, and to demonstrate with examples that the present invention can be implemented, so as to make the technical contents of the present invention clearer and make it easier for the technical personnel in the field to understand how to implement the present invention. However, the present invention can be embodied by many different forms of embodiments. The protection scope of the present invention is not limited to the embodiments mentioned herein, and the description of the following embodiments is not intended to limit the scope of the present invention.
- Directional terms mentioned in the present invention, such as “top”, “bottom”, “front”, “back”, “left”, “right”, “inner”, “outer”, “side” etc., are only used with reference to the orientation of the accompanying drawings. The directional terms used herein are intended to explain and illustrate, but not to limit, the protection scope of present invention.
- In the figures, units with similar structures are represented by the same label. Components with similar structures or functions everywhere are represented by similar numeric labels. In addition, for ease of understanding and description, the size and thickness of each component shown in the drawings are arbitrarily shown, and the present invention does not limit the size and thickness of each component.
- When one component is described as “on another component”, the component may be directly placed on another component; or there exists an intermediate component, the component is placed on the intermediate component, and then the intermediate component is placed on another component. Moreover, when one component is described as “installed to” or “connected to” another component, they can be understood as “installed” or “connected” directly; or they can be understood that one component is “installed to” or “connected to” another component through an intermediate component.
- Referring to
FIG. 1 , adisplay panel 100 defines a display area, and includes asubstrate 1, anantireflective film 2, a thinfilm transistor layer 3, anodes 4, apixel definition layer 5, alight emitting layer 6, acathode 7 and apackaging layer 8. - Wherein, the
substrate 1 includes afirst underlayer 11, anintermediate layer 12 and asecond underlayer 13. The thicknesses of thefirst underlayer 11 and thesecond underlayer 13 are 6-10 microns (μm). If the thicknesses of thefirst underlayer 11 and thesecond underlayer 13 are less than 6 μm, the production cost thereof will increase due to production process problems. If the thicknesses of thefirst underlayer 11 and thesecond underlayer 13 are greater than 10 μm, the overall thickness of thedisplay panel 100 will increase, which affects the beauty of the product and the feel of the use. The material of thefirst underlayer 11 and thesecond underlayer 13 can be polyimide, and thefirst underlayer 11 and thesecond underlayer 13 made from the polyimide have good flexibility. The material of theintermediate layer 12 may be SiO2 or SiNx, or a laminated structure of SiO2 and SiNx. The preparedintermediate layer 12 has good water and oxygen resistance and can also improve the reliability between thefirst underlayer 11 and thesecond underlayer 13. - Wherein the thin
film transistor layer 3 is disposed on thesubstrate 1, theantireflective film 2 is disposed between thesubstrate 1 and the thinfilm transistor layer 3. Theantireflective film 2 includes afirst film 21, asecond film 22 and athird film 23. Wherein thefirst film 21 is disposed on thesubstrate 1, thesecond film 22 is disposed on thefirst film 21, and thethird film 23 is disposed on thesecond film 22. Theantireflective film 2 can be formed on thesubstrate 1 by an ion beam assisted deposition process or a chemical deposition process. - Wherein, a refractive index of the
second film 22 to an incident light is greater than that of thefirst film 21 and thethird film 23 to the incident light, and a refractive index of thefirst film 21 to an incident light is greater than that of thethird film 23 to the incident light. Specifically, a material of thefirst film 21 is Al2O3, a material of thesecond film 22 is ZrO2, and a material of thethird film 23 is SiO2. Thus, the transmittance of thedisplay panel 100 can be effectively improved by using the three-layer anti-reflection film structure of λ/4-λ/2-2λ/4. In addition, theantireflective film 2 can also provide a good water oxygen barrier effect, to avoid an abnormal display of the display area of thelight emitting layer 6 caused by water vapor intrusion. - Wherein, thicknesses of the
first film 21, thesecond film 22 and thethird film 23 are 100-300 nm. Specifically, the thickness of thefirst film 21 is 110-150 nm, the thickness of thesecond film 22 is 240-280 nm, and the thickness of thethird film 23 is 110-150 nm. Thus, the transmittance can be increased and achieve the best effect. - Wherein, the anodes 4 are arranged at interval on the thin
film transistor layer 3; thepixel definition layer 5 is disposed between two adjacent anodes 4 on the thinfilm transistor layer 3; thelight emitting layer 6 is disposed on the anodes 4 and thepixel definition layer 5; thecathode 7 is disposed on thelight emitting layer 6; and thepackaging layer 8 is disposed on thecathode 7. - The
display panel 100 of the embodiment disposes agroove 9, which forms on one side of thepackaging layer 8 of the display area away from thesubstrate 1, and extends downward to one side of theantireflective film 2 facing the thinfilm transistor layer 3. Thegroove 9 can be rectangular or inverted trapezoidal in shape. In the embodiment, thegroove 9 is rectangular in shape. In the actual production, according to the actual demand, the number of thegroove 9 can be increased to two or more. In the embodiment, by setting thegroove 9 in the display area of thedisplay panel 100, the display area can be increased and the full screen can be achieved. - The differences between the second embodiment and the first embodiment are explained below, and their similarities are not repeated here.
- Referring to
FIG. 2 , the embodiment further provides a display device, which includes thedisplay panel 100 of the present invention and acamera 200 located under thedisplay panel 100. Thecamera 200 is located under thedisplay panel 100 and is corresponding to thegroove 9. Thus, the display area can be increased and the full screen can be achieved. - Specifically, a projection area of the
groove 9 in thedisplay panel 100 can be larger than that of thecamera 200, so as to increase a lighting area of thecamera 200, improve an imaging effect of thecamera 200 and increase a customer experience. - As shown in
FIG. 3 , in the actual production, the number of thegroove 9 can be increased to two or more. Thegrooves 9 are arranged to form an open area shown by dotted lines in the drawing. Thecamera 200 is corresponding to the open area, thereby achieving the same display effect, increasing the display area, and achieving the full screen effect. - The display panel and the display device provided by the present invention are described in detail above. It should be understood that the exemplary embodiments described herein should be considered descriptive only to help understand the methods and core ideas of the invention, and not to limit the invention. The description of features or aspects in each exemplary embodiment should generally be considered to be applicable to similar features or aspects in other exemplary embodiments. Although the present invention is described with reference to exemplary embodiments, various changes and modifications may be recommended by those skilled in the art. The present invention intends to cover these changes and changes within the scope of the appended claims. Any modification, equivalent replacement and improvement made within the spirit and principles of the present invention shall be included in the scope of protection of the present invention.
Claims (10)
1. A display panel, defining a display area and including:
a substrate;
an antireflective film, being disposed on the substrate;
a thin film transistor layer, being disposed on the antireflective film; and
a packaging layer, being disposed on the thin film transistor layer;
wherein a groove is formed on one side of the packaging layer of the display area away from the substrate, and extends downward to one side of the antireflective film facing a thin film transistor layer.
2. The display panel as claimed in claim 1 , wherein the groove is rectangular or inverted trapezoidal in shape.
3. The display panel as claimed in claim 1 , wherein the number of the groove is two or more.
4. The display panel as claimed in claim 1 , wherein the antireflective film is formed on the substrate by an ion beam assisted deposition process or a chemical deposition process.
5. The display panel as claimed in claim 1 , wherein the antireflective film includes a first film, a second film and a third film; the first film is formed on the substrate; a refractive index of the second film to an incident light is greater than that of the first film and the third film to the incident light, and a refractive index of the first film to an incident light is greater than that of the third film to the incident light.
6. The display panel as claimed in claim 5 , wherein a material of the first film is Al2O3, a material of the second film is ZrO2, and a material of the third film is SiO2.
7. The display panel as claimed in claim 5 , wherein thicknesses of the first film, the second film and the third film are 100-300 nm.
8. The display panel as claimed in claim 5 , wherein a thickness of the first film is 110-150 nm, a thickness of the second film is 240-280 nm, and a thickness of the third film is 110-150 nm.
9. The display panel as claimed in claim 1 , wherein further including:
anodes, being arranged at interval on the thin film transistor layer;
a pixel definition layer, being disposed on the thin film transistor layer and located between two adjacent anodes;
a light emitting layer, being disposed on the anodes and the pixel definition layer; and
a cathode, being disposed on the light emitting layer;
wherein the packaging layer is disposed on the cathode.
10. A display device, comprising a display panel and a camera located under the display panel; wherein the display panel is the display panel as claimed in claim 1 , and the camera is disposed under the display panel and is corresponding to the groove.
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CN201910495048.7A CN110265441B (en) | 2019-06-10 | 2019-06-10 | Display panel and display device thereof |
CN201910495048.7 | 2019-06-10 | ||
PCT/CN2019/099249 WO2020248348A1 (en) | 2019-06-10 | 2019-08-05 | Display panel, and display device having same |
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CN110752221B (en) * | 2019-10-30 | 2022-02-11 | 厦门天马微电子有限公司 | Display device |
CN111725427B (en) * | 2020-06-11 | 2022-04-05 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
CN111754876B (en) * | 2020-06-28 | 2022-06-21 | 昆山国显光电有限公司 | Display panel and display device |
CN113066837B (en) * | 2021-03-22 | 2023-07-11 | 合肥维信诺科技有限公司 | Display panel and display device |
CN113066842B (en) * | 2021-03-23 | 2024-02-20 | 合肥维信诺科技有限公司 | Display panel, display device and preparation method of display panel |
CN113555403B (en) * | 2021-07-20 | 2024-05-24 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
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KR101210163B1 (en) * | 2011-04-05 | 2012-12-07 | 엘지이노텍 주식회사 | Optical sheet and method of fabricating the same |
CN105022511B (en) * | 2014-04-17 | 2018-10-02 | 宸鸿光电科技股份有限公司 | Touch panel and the touch device with the touch panel |
KR101805552B1 (en) * | 2015-08-31 | 2017-12-08 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device |
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CN107315207A (en) * | 2017-07-05 | 2017-11-03 | 业成科技(成都)有限公司 | Increase the face equipment and its manufacture method of camera hole light transmittance |
FR3070094B1 (en) * | 2017-08-11 | 2019-09-06 | Isorg | DISPLAY SYSTEM COMPRISING AN IMAGE SENSOR |
CN109599414B (en) * | 2017-09-30 | 2020-06-23 | 昆山国显光电有限公司 | Display screen and electronic product |
CN107658332A (en) * | 2017-10-25 | 2018-02-02 | 京东方科技集团股份有限公司 | A kind of display panel, display device and preparation method |
CN107785400A (en) * | 2017-10-26 | 2018-03-09 | 京东方科技集团股份有限公司 | Array base palte and display device |
KR102477574B1 (en) * | 2018-01-30 | 2022-12-14 | 삼성디스플레이 주식회사 | Wiring substrate, display device including the same, and method of manufacturing the wiring substrate |
CN108269839B (en) * | 2018-01-31 | 2020-12-04 | 广州国显科技有限公司 | Display screen and electronic equipment with same |
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US10840267B2 (en) * | 2018-05-14 | 2020-11-17 | Yungu (Gu'an) Technology Co., Ltd. | Array substrates and manufacturing methods thereof, and display panels |
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US11152593B1 (en) | 2021-10-19 |
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