WO2021056725A1 - 一种彩膜基板及其制备方法、oled显示装置 - Google Patents

一种彩膜基板及其制备方法、oled显示装置 Download PDF

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Publication number
WO2021056725A1
WO2021056725A1 PCT/CN2019/117243 CN2019117243W WO2021056725A1 WO 2021056725 A1 WO2021056725 A1 WO 2021056725A1 CN 2019117243 W CN2019117243 W CN 2019117243W WO 2021056725 A1 WO2021056725 A1 WO 2021056725A1
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Prior art keywords
color filter
filter substrate
color
black matrix
substrate
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PCT/CN2019/117243
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English (en)
French (fr)
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李元元
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/626,337 priority Critical patent/US11315984B2/en
Publication of WO2021056725A1 publication Critical patent/WO2021056725A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/003—Light absorbing elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/205—Neutral density filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • the invention relates to the field of display technology, in particular to a color film substrate and a preparation method thereof, and an OLED display device.
  • OLED Organic Light-Emitting Diode, Organic Light Emitting Diode
  • OLED Organic Light-Emitting Diode
  • organic Light Emitting Diode display device
  • organic electric laser display device organic light emitting semiconductor
  • OLED the characteristic of OLED is that it emits light by itself, unlike the thin film transistor liquid crystal display device (English full name: Thin Film transistor-liquid crystal display (TFT-LCD for short) needs backlight, so visibility and brightness are high.
  • TFT-LCD Thin Film transistor-liquid crystal display
  • OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption, and extremely high response speed. It has become One of today’s most important display technologies is gradually replacing TFT-LCD is expected to become the next-generation mainstream display technology after LCD.
  • the basic structure of an OLED is a sandwich structure, which is usually a sandwich-like structure composed of an anode, a luminescent material, and a cathode.
  • the entire structure layer includes: hole transport layer (HTL), light emitting layer (EL) and electron transport layer (ETL).
  • HTL hole transport layer
  • EL light emitting layer
  • ETL electron transport layer
  • the positive electrode holes and the surface cathode charges will combine in the light-emitting layer, and under the action of the Coulomb force, they will recombine with a certain probability to form excitons (electron-hole pairs) in an excited state.
  • the excited state is unstable in a normal environment.
  • the excitons in the excited state recombine and transfer energy to the luminescent material, making it transition from the ground state energy level to the excited state.
  • the excited state energy generates photons through the radiation relaxation process and releases light. It can produce light, and the three primary colors of red, green and blue are produced according to the different formula
  • OLEDs can be divided into three types according to the direction of light emission: bottom light emission (bottom emission), top light emission (top emission) and double-sided light emission (double-sided emission).
  • the transparent anode of the bottom-emitting OLED device is located on the transparent substrate, the transparent anode is a multilayer organic thin film layer, and the organic thin film layer is a total reflection metal or alloy cathode, and light can only be emitted from the substrate through the anode.
  • the top-emitting OLED device is different.
  • the anode uses a totally reflective metal, and the top cathode is a thin semi-transparent metal or alloy film, and light is emitted from the top cathode.
  • An object of the present invention is to provide a color film substrate, a preparation method thereof, and an OLED display device, which can solve the problem of optical crosstalk existing in the current OLED display device.
  • an embodiment of the present invention provides a color filter substrate, which includes: a substrate, a black matrix, a color resist, and a partition wall.
  • the black matrix is arranged on the substrate, and openings are arranged at intervals in a matrix manner on the black matrix; the color resist is coated in the opening; the partition wall is arranged between the adjacent color resists Between the black matrix.
  • a groove is provided on the black matrix between the two adjacent color resistors, and the partition wall is arranged on the groove of the black matrix.
  • the grooves include one or more of rectangular grooves, zigzag grooves, wave-shaped grooves, and arc-shaped grooves.
  • constituent material of the separation wall includes black PI material.
  • the surface of the partition wall away from the substrate is flush with the surface of the color resist away from the substrate.
  • Another embodiment of the present invention also provides a method for preparing the color filter substrate of the present invention, which includes: step S1, providing a substrate, and coating, baking, exposing, and developing processes on the substrate.
  • a black matrix is prepared above, and openings are arranged on the black matrix at intervals in a matrix manner, and color resists are formed in the openings; step S2, the separation wall is formed on the black matrix between adjacent color resists.
  • a groove is first prepared on the black matrix between the adjacent color resists, and then the partition wall is formed in the groove.
  • the partition wall is formed by filling the partition wall material in the groove by printing or coating, and then irradiating the partition wall material with ultraviolet light, Thus, the separation wall is formed.
  • partition wall material includes black PI material.
  • Another embodiment of the present invention also provides an OLED display device, which includes a color filter substrate and an OLED device.
  • the color filter is basically the color filter substrate involved in the present invention; the color filter substrate is arranged above the OLED device.
  • the invention relates to a color film substrate, a preparation method thereof, and an OLED display device.
  • the invention avoids the problem of light crosstalk between adjacent color resistors by arranging an isolation wall on a black matrix between two adjacent color resistors. Avoid color mixing to improve the display effect.
  • Fig. 1 is a schematic diagram of the structure of the color filter substrate of the present invention.
  • Fig. 2 is a diagram of the preparation steps of the color filter substrate of the present invention.
  • FIG. 3 is a schematic diagram of the structure of an OLED device of the OLED display device of the present invention.
  • Color film substrate 200 OLED device
  • Substrate 102 black matrix
  • the component can be directly placed on the other component; there may also be an intermediate component on which the component is placed , And the intermediate component is placed on another component.
  • a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is “installed to” or “connected to” through an intermediate component Another component.
  • a color filter substrate includes: a substrate 101, a black matrix 102, a color resist 103 and a partition wall 104.
  • the black matrix 102 is disposed on the substrate 101, and the black matrix 102 is provided with openings 1021 at intervals in a matrix manner; the color resist 103 is coated in the opening 1021; wherein the adjacent two colors
  • the black matrix 102 between the resistors 103 is provided with a groove 1022; the isolation wall 104 is provided on the groove 1022.
  • the groove 1022 may be one or more of rectangular grooves, zigzag grooves, wave-shaped grooves, and arc-shaped grooves.
  • the groove 1022 is a rectangular groove. Since the black PI material has a certain degree of fluidity, the provision of grooves is convenient for positioning the partition wall 104.
  • the constituent material of the separation wall 4 includes black PI material. Specifically, by printing or coating a partition wall material containing black PI material in the groove 22, after the black PI in the partition wall material is irradiated with linearly polarized ultraviolet light, chemical bonds in the molecular structure of the material are formed Or damage, so that the polymer chain has a directional arrangement, the black PI material in the partition wall material forms a certain angle to absorb the light emitted by the corresponding pixel, so as to avoid the problem of light crosstalk between adjacent color resistors 3, Avoid color mixing to improve the display effect.
  • the surface of the partition wall 104 away from the substrate 101 is flush with the surface of the color resist 103 away from the substrate 101. Therefore, the flatness of the color filter substrate 100 can be ensured.
  • this embodiment also provides a method for preparing the color filter substrate of the present invention, which includes: step S1, black matrix and color resist preparation steps; specifically, a substrate 101 is provided, A black matrix 102 is prepared on the substrate 101 through coating, baking, exposure, and development processes, and openings are arranged on the black matrix 102 at intervals in a matrix manner, and color resists 103 are formed in the openings; step S2, Partition wall preparation step; specifically, a groove 1022 is prepared on the black matrix 102 between the adjacent color resistors 103, and a partition wall material containing black PI material is printed or coated in the groove 1022, using ultraviolet The light irradiates the partition wall material so that the partition wall material forms a partition wall 104 on the black matrix 102.
  • This embodiment provides an OLED display device, which includes the color filter substrate 100 and the OLED device 200 involved in the present invention, and the color filter substrate 100 is disposed above the OLED device 200.
  • the OLED device 200 includes: a substrate 201, an anode layer 202, a first functional layer 203, an organic light-emitting layer 204, a second functional layer 205, a cathode layer 206, and a light extraction layer 207.
  • the anode layer 202 is disposed on the substrate 201;
  • the first functional layer 203 is disposed on the anode layer 202;
  • the organic light-emitting layer 204 is disposed on the first functional layer 203;
  • the The second functional layer 205 is disposed on the organic light-emitting layer 204;
  • the cathode layer 206 is disposed on the second functional layer 205;
  • the light extraction layer 207 is disposed on the cathode layer 206.
  • the substrate 201 may be glass or a TFT backplane, and the TFT backplane may be a low-temperature polysilicon TFT or an oxide TFT.
  • the first functional layer 203 includes a hole injection layer 2031 and a hole transport layer 2032.
  • the first functional layer 203 may include one or more of a hole injection layer 2031 and a hole transport layer 2032.
  • the hole transport layer 2032 controls the transport of holes, thereby controlling the recombination of holes and electrons in the organic light-emitting layer 204, thereby improving luminous efficiency.
  • the organic light-emitting layer 204 is composed of light-emitting materials, and the organic light-emitting layer 204 can be prepared by one of methods such as evaporation, printing, homogeneous deposition, and vapor phase synthesis, but is not limited thereto.
  • the second functional layer 205 includes an electron transport layer 2051 and an electron injection layer 2052.
  • the second functional layer 205 may include one or more of the electron transport layer 2051 and the electron injection layer 2052.
  • the electron transport layer 2051 controls the transport of electrons, and further controls the recombination of electrons and holes in the organic light-emitting layer 204, thereby improving luminous efficiency.
  • the cathode layer 206 is composed of a material that has both light transmittance and conductivity. Specifically, it can be a doped metal material or a semiconductor material.
  • the light extraction layer 207 is made of a refractive material, which can avoid the problem of low light extraction efficiency caused by the large difference between the refractive index of the cathode layer 206 and the air, and effectively improve the light extraction efficiency.
  • the OLED device 200 of this embodiment further includes: an electron blocking layer 208 and a hole blocking layer 209.
  • the electron blocking layer 208 is disposed between the organic light-emitting layer 204 and the anode layer 202; the hole blocking layer 209 is disposed between the organic light-emitting layer 204 and the cathode layer 206.
  • the electron blocking layer 208 is disposed between the organic light-emitting layer 204 and the hole transport layer 2032; the hole blocking layer 209 is disposed on the organic light-emitting layer 204 and the electron transport layer 2051.
  • the electron blocking layer 208 can effectively prevent electrons from combining with holes in the hole transport layer 2032, thereby improving luminous efficiency; and can effectively block water vapor from entering the organic light emitting layer 204, thereby improving the use of the OLED device 200 life.
  • the hole blocking layer 209 can effectively prevent holes from combining with electrons in the electron transport layer 2051, thereby improving luminous efficiency; and can effectively block water vapor from entering the organic light emitting layer 204, thereby increasing the service life of the OLED device 200.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明涉及一种彩膜基板及其制备方法、OLED显示装置，其中所述彩膜基板包括：基板、黑色矩阵、色阻以及隔离墙。本发明通过在相邻两色阻之间的黑色矩阵上设置隔离墙，从而避免光线在相邻色阻之间的串扰问题，避免混色，从而提高显示效果。

Description

一种彩膜基板及其制备方法、OLED显示装置 技术领域
本发明涉及显示技术领域，具体涉及一种彩膜基板及其制备方法、OLED显示装置。
 背景技术
OLED(英文全称：Organic Light-Emitting Diode, 有机发光二极管)显示器件又称为有机电激光显示装置、有机发光半导体。
首先OLED的特性是自己发光，不像薄膜晶体管液晶显示装置（英文全称：Thin film transistor-liquid crystal display，简称TFT-LCD）需要背光，因此可视度和亮度均高。其次OLED具有电压需求低、省电效率高、反应快、重量轻、厚度薄，构造简单，成本低、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点，已经成为当今最重要的显示技术之一，正在逐步替代 TFT-LCD，有望成为继LCD之后的下一代主流显示技术。
OLED的基本结构属于夹层式结构，通常是由阳极、发光材料以及阴极包成类似三明治的结构。整个结构层中包括了:空穴传输层(HTL)、发光层(EL)与电子传输层(ETL)。当电力供应至适当电压时，正极空穴与面阴极电荷就会在发光层中结合，在库伦力的作用下以一定几率复合形成处于激发态的激子（电子-空穴对），而此激发态在通常的环境中是不稳定的，激发态的激子复合并将能量传递给发光材料，使其从基态能级跃迁为激发态，激发态能量通过辐射驰豫过程产生光子，释放出光能，产生光亮，依其配方不同产生红、绿和蓝三基色，构成基本色彩。
OLED按照出光方向可分为三种：底部出光（底发射）、顶部出光(顶发射)和双面出光（双面发射）。其中底发射OLED器件的透明阳极位于透明衬底上面，透明阳极上是多层有机薄膜层，有机薄膜层上面是全反射金属或合金阴极，光线只能透过阳极从衬底方向发射出。而顶发射OLED器件则不一样，其阳极用的是全反射金属，顶部阴极是很薄的半透明金属或合金薄膜，光线从顶部阴极发射出。
 技术问题
目前的OLED显示装置的发光衬底与彩膜基板中间存在间距，光线容易在彩膜基板的相邻子像素单元之间产生串扰，影响显示效果。因此需要寻求一种新型的彩膜基板及包括这种彩膜基板的OLED显示装置已解决上述问题。
 技术解决方案
本发明的一个目的是提供一种彩膜基板及其制备方法、OLED显示装置，其能够解决目前的OLED显示装置中存在的光串扰问题。
为了解决上述问题，本发明的一个实施方式提供了一种彩膜基板，其中包括：基板、黑色矩阵、色阻以及隔离墙。其中所述黑色矩阵设置于所述基板上，所述黑色矩阵上以矩阵方式间隔设置有开口；所述色阻涂布于所述开口中；所述隔离墙设置于所述相邻色阻之间的黑色矩阵上。
进一步地，其中所述相邻两色阻之间的黑色矩阵上设有凹槽，所述隔离墙设置于所述黑色矩阵的凹槽上。
进一步地，其中所述凹槽包括矩形凹槽、锯齿形凹槽、波浪形凹槽、弧形凹槽中的一种或多种。
进一步地，其中所述隔离墙的组成材料包括黑色PI材料。
进一步地，其中所述隔离墙的远离基板的表面与所述色阻远离基板的表面平齐。
本发明的另一个实施方式还提供了一种制备本发明涉及所述的彩膜基板的制备方法，其中包括：步骤S1，提供一基板，通过涂布、烘烤、曝光、显影工艺分别在基板上制备出黑色矩阵，并在所述黑色矩阵上以矩阵方式间隔设置开口，在所述开口中形成色阻；步骤S2，在相邻色阻之间的黑色矩阵上形成所述隔离墙。
进一步地，其中所述步骤S2中，其为在所述相邻色阻之间的黑色矩阵上先制备凹槽，然后在所述凹槽内形成所述隔离墙。
进一步地，其中所述步骤S2中，其中所述隔离墙的形成方式为在所述凹槽内以打印或涂布的方式填充隔离墙材料，然后采用紫外光对所述隔离墙材料进行照射，从而形成所述隔离墙。
进一步地，其中所述隔离墙材料包括黑色PI材料。
本发明的另一个实施方式还提供了一种OLED显示装置，其中包括：彩膜基板和OLED器件。其中所述彩膜基本为本发明涉及的所述的彩膜基板；所述彩膜基板设置于所述OLED器件上方。
 有益效果
本发明涉及一种彩膜基板及其制备方法、OLED显示装置，本发明通过在相邻两色阻之间的黑色矩阵上设置隔离墙，从而避免光线在相邻色阻之间的串扰问题，避免混色，从而提高显示效果。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明彩膜基板的结构示意图。
图2是本发明彩膜基板的制备步骤图。
图3是本发明OLED显示装置的OLED器件的结构示意图。
图中部件标识如下：
100、彩膜基板                   200、OLED器件
101、基板                       102、黑色矩阵
1021、开口                      1022、凹槽
103、色阻                       104、隔离墙
201、衬底                       202、阳极层
203、第一功能层                 204、有机发光层
205、第二功能层                 206、阴极层
207、光取出层                   208、电子阻挡层
209、空穴阻挡层
2031、空穴注入层                2032、空穴传输层
2051、电子传输层                2052、电子注入层
 本发明的实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的 ，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
实施例1
如图1所示，一种彩膜基板，其中包括：基板101、黑色矩阵102、色阻103以及隔离墙104。其中所述黑色矩阵102设置于所述基板101上，所述黑色矩阵102上以矩阵方式间隔设置有开口1021；所述色阻103涂布于所述开口1021中；其中所述相邻两色阻103之间的黑色矩阵102上设有凹槽1022；所述隔离墙104设置于所述凹槽1022上。
其中所述凹槽1022可以是矩形凹槽、锯齿形凹槽、波浪形凹槽、弧形凹槽中的一种或多种。本实施例中凹槽1022为矩形凹槽。由于黑色PI材料具有一定的流动性，设置凹槽便于定位隔离墙104。
其中所述隔离墙4的组成材料包括黑色PI材料。具体的，通过在所述凹槽22中打印或涂布含有黑色PI材料的隔离墙材料，所述隔离墙材料中的黑色PI经过线性偏极化紫外光照射后，材料分子结构中的化学键生成或破坏，使得高分子链具有方向性的排列，隔离墙材料中的黑色PI材料形成一定的角度，对相应像素发射的光进行吸收，从而避免光线在相邻色阻3之间的串扰问题，避免混色，从而提高显示效果。
如图1所示，所述隔离墙104的远离基板101的表面与所述色阻103远离基板101的表面平齐。由此可以保证彩膜基板100的平整度。
实施例2
如图2所示，本实施例还提供了一种制备本发明涉及的所述彩膜基板的制备方法，其中包括：步骤S1，黑色矩阵、色阻制备步骤；具体的，提供一基板101，通过涂布、烘烤、曝光、显影工艺分别在基板101上制备出黑色矩阵102，并在所述黑色矩阵102上以矩阵方式间隔设置开口，在所述开口中形成色阻103；步骤S2，隔离墙制备步骤；具体的，在所述相邻色阻103之间的黑色矩阵102上制备凹槽1022，在所述凹槽1022中打印或涂布含有黑色PI材料的隔离墙材料，采用紫外光对隔离墙材料进行照射，使隔离墙材料在所述黑色矩阵102上形成隔离墙104。
实施例3
本实施方式提供了一种OLED显示装置，其中包括本发明涉及的所述的彩膜基板100以及OLED器件200，所述彩膜基板100设置于所述OLED器件200上方。
如图3所示，其中所述OLED器件200包括：衬底201、阳极层202、第一功能层203、有机发光层204、第二功能层205、阴极层206以及光取出层207。其中所述阳极层202设置于所述衬底201上；所述第一功能层203设置于所述阳极层202上；所述有机发光层204设置于所述第一功能层203上；所述第二功能层205设置于所述有机发光层204上；所述阴极层206设置于所述第二功能层205上；所述光取出层207设置于所述阴极层206上。
其中所述衬底201可以是玻璃也可以是TFT背板，所述TFT背板可以是低温多晶硅TFT，也可以是氧化物TFT。
如图3所示，其中所述第一功能层203包括空穴注入层2031和空穴传输层2032。具体生产过程中，所述第一功能层203可以包括空穴注入层2031和空穴传输层2032中的一种或多种。其中所述空穴传输层2032控制着空穴的传输，进而控制空穴在有机发光层204中与电子的复合，进而提高发光效率。
其中所述有机发光层204是由发光材料组成，所述有机发光层204可以通过蒸镀、打印、均相沉积法及气相合成法等方式中的一种来制备，但不限于此。
如图3所示，其中所述第二功能层205包括电子传输层2051和电子注入层中2052。具体生产过程中，所述第二功能层205可以包括电子传输层2051和电子注入层2052中的一种或多种。其中所述电子传输层2051控制着电子的传输，进而控制电子在所述有机发光层204中与空穴的复合，进而提高发光效率。
其中所述阴极层206是由兼顾透光性与导电性的材料组成。具体可以是掺杂的金属材料或者是半导体材料。
其中所述光取出层207采用折射材料做成，可以避免所述阴极层206与空气的折射率相差较大，造成的出光效率低的问题，有效提高出光效率。
如图3所示，本实施例所述OLED器件200还包括：电子阻挡层208和空穴阻挡层209。其中所述电子阻挡层208设置于所述有机发光层204与所述阳极层202之间；所述空穴阻挡层209设置于所述有机发光层204与所述阴极层206之间。具体的，本实施例中，所述其中所述电子阻挡层208设置于所述有机发光层204与所述空穴传输层2032之间；所述空穴阻挡层209设置于所述有机发光层204与所述电子传输层2051之间。具体的，所述电子阻挡层208可以有效防止电子与空穴传输层2032中的空穴结合，从而提高发光效率；并且可以有效阻隔水汽进入所述有机发光层204，从而提高OLED器件200的使用寿命。所述空穴阻挡层209可以有效防止空穴与电子传输层2051中的电子结合，从而提高发光效率；并且可以有效阻隔水汽进入所述有机发光层204，从而提高OLED器件200的使用寿命。
以上对本发明所提供的彩膜基板及其制备方法、OLED显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种彩膜基板，其中包括：
    基板；
    黑色矩阵，所述黑色矩阵设置于所述基板上，所述黑色矩阵上以矩阵方式间隔设置有开口；
    色阻，所述色阻涂布于所述开口中；以及
    隔离墙，所述隔离墙设置于所述相邻色阻之间的黑色矩阵上。
  2. 根据权利要求1所述的彩膜基板，其中所述相邻色阻之间的黑色矩阵上设有凹槽，所述隔离墙设置于所述黑色矩阵的凹槽上。
  3. 根据权利要求2所述的彩膜基板，其中所述凹槽包括矩形凹槽、锯齿形凹槽、波浪形凹槽、弧形凹槽中的一种或多种。
  4. 根据权利要求1所述的彩膜基板，其中所述隔离墙的组成材料包括黑色PI材料。
  5. 根据权利要求1所述的彩膜基板，其中所述隔离墙的远离基板的表面与所述色阻远离基板的表面平齐。
  6. 一种制备根据权利要求1所述彩膜基板的制备方法，其中包括：
    步骤S1，提供一基板，通过涂布、烘烤、曝光、显影工艺分别在基板上制备出黑色矩阵，并在所述黑色矩阵上以矩阵方式间隔设置开口，在所述开口中形成色阻；
    步骤S2，在相邻色阻之间的黑色矩阵上形成所述隔离墙。
  7. 根据权利要求6所述的彩膜基板的制备方法，其中所述步骤S2中，其为在所述相邻色阻之间的黑色矩阵上先制备凹槽，然后在所述凹槽内形成所述隔离墙。
  8. 根据权利要求7所述的彩膜基板的制备方法，其中所述步骤S2中，其中所述隔离墙的形成方式为在所述凹槽内以打印或涂布的方式填充隔离墙材料，然后采用紫外光对所述隔离墙材料进行照射，从而形成所述隔离墙。
  9. 根据权利要求8所述的彩膜基板的制备方法，其中所述隔离墙材料包括黑色PI材料。
  10. 一种OLED显示装置，其中包括：
    彩膜基板，所述彩膜基板为权利要求1所述的彩膜基板；
    OLED器件，所述彩膜基板设置于所述OLED器件上方。
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