WO2019015447A1 - 阵列基板及其制备方法、显示装置 - Google Patents

阵列基板及其制备方法、显示装置 Download PDF

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Publication number
WO2019015447A1
WO2019015447A1 PCT/CN2018/092883 CN2018092883W WO2019015447A1 WO 2019015447 A1 WO2019015447 A1 WO 2019015447A1 CN 2018092883 W CN2018092883 W CN 2018092883W WO 2019015447 A1 WO2019015447 A1 WO 2019015447A1
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magnetic field
electric field
responsive particles
thin film
substrate
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PCT/CN2018/092883
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English (en)
French (fr)
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侯文军
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京东方科技集团股份有限公司
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Priority to US16/338,604 priority Critical patent/US10873059B2/en
Publication of WO2019015447A1 publication Critical patent/WO2019015447A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/90—Assemblies of multiple devices comprising at least one organic light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • Embodiments of the present disclosure relate to an array substrate, a method of fabricating the same, and a display device.
  • an electroluminescent diode such as an Organic Light-Emitting Diode (OLED)
  • OLED Organic Light-Emitting Diode
  • LCD liquid crystal display
  • the OLED display device can be classified into a top emission type OLED display device and a bottom emission type OLED display device.
  • a functional layer of the OLED display device on a thin film transistor (TFT)
  • TFT thin film transistor
  • each functional layer is mostly formed of an organic material, however, the flatness of each functional layer And the uniformity of thickness needs to be improved.
  • At least one embodiment of the present disclosure provides a method of fabricating an array substrate, the method of fabricating the array substrate comprising: providing a substrate; forming a film including an organic material and responsive particles on the substrate; applying the film At least one of an electric field and a magnetic field, the responsive particles driving the organic material to flow under a force of at least one of the electric field and the magnetic field to planarize the film to form an organic layer.
  • the responsive particle is configured to be movable under a force of at least one of the electric field and the magnetic field.
  • the method before the forming the film including the organic material and the responsive particles, the method further comprises: mixing the organic material and the responsive particles.
  • the forming a film including the organic material and the responsive particles includes: forming an organic film using an organic material; and adding the responsive particles to the organic film.
  • adding the responsive particles to the organic film includes doping the responsive particles in the organic film by inkjet printing.
  • the preparation method provided by at least one embodiment of the present disclosure further includes forming a thin film transistor on the base substrate, the thin film transistor having a recessed surface near a surface of one side of the thin film.
  • the responsive particles are doped in the organic material to form a doped region, and an orthographic projection of the doped region on the substrate substrate covers the An orthographic projection of the recessed area on the base substrate.
  • the number of the responsive particles doped in the doped region is proportional to the depth of the recessed region.
  • applying at least one of an electric field and a magnetic field to the film includes: applying the electric field and the magnetic field outside the recessed region of the thin film transistor At least one of them.
  • the intensity of the applied electric field and/or the magnetic field is proportional to the depth of the recessed region.
  • applying at least one of an electric field and a magnetic field to the film includes applying at least one of the electric field and the magnetic field outside the thin film transistor.
  • the applied electric field and the strength of the magnetic field are proportional to the depth of the recessed region.
  • the electric field and the magnetic field are a directional electric field and a directional magnetic field
  • the direction of the directional electric field and the directional magnetic field is from the thin film transistor to the organic The direction of the layer, or the direction from the organic layer to the thin film transistor.
  • the electric field intensity of the directional electric field is 200-1000 volts/cm
  • the magnetic field strength of the directional magnetic field is 200-1000 gauss.
  • the responsive particle includes an electric field responsive particle and a magnetic field responsive particle
  • the electric field responsive particle includes titanium dioxide particles
  • the magnetic field responsive particle includes a ferrotitanium oxide particle and three At least one of the particles of iron oxide.
  • the organic material includes at least one of polymethyl methacrylate, polyimide, and a silicone material.
  • At least one embodiment of the present disclosure further provides an array substrate, the array substrate comprising: a substrate substrate; a film layer structure on the substrate substrate, wherein the film layer structure comprises an organic material and responsive particles, The responsive particles move the organic material under the force of at least one of an electric field and a magnetic field.
  • the responsive particles are configured to be movable under a force of at least one of the electric field and the magnetic field.
  • At least one embodiment of the present disclosure also provides a display device including any of the above array substrates.
  • FIG. 1 is a flow chart of a method for preparing a film layer structure according to an embodiment of the present disclosure
  • FIG. 2 is a flowchart of a method for preparing an OLED array substrate according to an embodiment of the present disclosure
  • FIG. 3( a ) is a first schematic diagram of a method for fabricating an OLED array substrate according to an embodiment of the present disclosure
  • FIG. 3(b) is a second schematic diagram of a method for fabricating an OLED array substrate according to an embodiment of the present disclosure
  • FIG. 3(c) is a third schematic diagram of a method for fabricating an OLED array substrate according to an embodiment of the present disclosure
  • FIG. 4( a ) is a first schematic diagram of a method for fabricating another OLED array substrate according to an embodiment of the present disclosure
  • FIG. 4(b) is a second schematic diagram of a method for fabricating another OLED array substrate according to an embodiment of the present disclosure
  • FIG. 4(c) is a third schematic diagram of a method for fabricating another OLED array substrate according to an embodiment of the present disclosure
  • FIG. 5 is a schematic structural diagram of a film layer structure according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic cross-sectional view of an OLED array substrate according to an embodiment of the present disclosure.
  • An electroluminescence display device for example, an organic light-emitting diode (OLED) display device in which a functional layer is formed by a vapor deposition method and a solution method, wherein the evaporation method is applied to an organic small molecule, which is characterized by formation of an organic thin film.
  • OLED organic light-emitting diode
  • No solvent is required in the process, but the production equipment used is expensive and the production cost is large.
  • This method is not suitable for the production of large-sized electronic products, nor is it suitable for large-scale production;
  • the film formation method of the solution method is suitable for polymer materials and Soluble small molecules, solution methods mainly include: inkjet printing, spin coating, nozzle coating, screen printing and other technologies, which are characterized by low equipment cost and outstanding advantages in large-scale production and large-scale production.
  • the functional layer of the OLED display device is prepared by an inkjet printing method in a solution method.
  • the layer structure already formed on the base substrate has a great influence on the distribution of the organic film formed by inkjet printing; on the other hand, since the droplet formed by the organic material in the solution method has the characteristics of free flow, The uniformity of the flatness and thickness of the finally formed organic film layer is affected. If the flatness of an organic film layer is poor, the uniformity of the thickness of the subsequently formed film layer is further affected, resulting in a problem of uneven pixel light emission in the OLED display device.
  • the inventors of the present disclosure have noted that by adding particles responsive to at least one of an electric field and a magnetic field to an organic material, in response to particle motion, and in response to at least one of an applied electric field and a magnetic field The organic material moves with the movement of the responsive particles, so that the planarization of the organic layer can be achieved, thereby making the thickness of other film layers prepared on the organic layer more uniform, and at the same time, improving the uniformity of pixel luminescence in the OLED device. Sex.
  • At least one embodiment of the present disclosure provides a method of preparing an organic layer, the method comprising: forming a thin film including an organic material and a responsive particle on a substrate, and applying at least one of an electric field and a magnetic field to the thin film, The responsive particles act to drive the organic material under the action of at least one of an electric field and a magnetic field to planarize the formed film to form an organic layer.
  • FIG. 1 is a flowchart of a method for preparing a film layer structure according to an embodiment of the present disclosure. As shown in FIG. 1 , the method for preparing the organic layer includes the following steps S10 and S20:
  • Step S10 forming a thin film including an organic material and responsive particles on the base substrate;
  • the organic material is at least one of polymethyl methacrylate, polyimide, and silicone material. It should be noted that the organic material may also be any other suitable component, which is not limited herein. .
  • the responsive particles include electric field responsive particles and magnetic field responsive particles, ie, the responsive particles are responsive to an electric field, or may be responsive to a magnetic field, and the particle size of the responsive particles is nanometer, and the shape of the responsive particles may be spherical, ellipsoidal, or the like. Regular or irregular shape.
  • the responsive particle is configured to be movable under the action of at least one of an electric field and a magnetic field.
  • the electric field responsive particle refers to a particle that can move under the action of an electric field.
  • the magnetic field responsive particle refers to The particles are able to move under the influence of a magnetic field.
  • the electric field responsive particles include titanium dioxide particles; the magnetic field responsive particles include ferroferric oxide particles or ferric oxide particles. It should be noted that the electric field responsive particles and the magnetic field responsive particles may also be in other applied electric and magnetic fields.
  • the responsive particles under the action of at least one of the embodiments of the present disclosure are not limited thereto.
  • the base substrate may be a glass substrate, a quartz substrate, a plastic substrate, or the like.
  • the method before forming a film including the organic material and the responsive particles, the method further comprises mixing the organic material and the responsive particles, and forming the material obtained by mixing the organic material and the responsive particles on the base substrate.
  • a material obtained by mixing an organic material and a responsive particle is coated on a base substrate.
  • forming a film including an organic material and a responsive particle includes first forming an organic film using an organic material, and then adding a responsive particle to the organic film.
  • the addition of the responsive particles to the organic film includes doping the responsive particles in the organic film by ink jet printing.
  • Step S20 applying at least one of an electric field and a magnetic field to the film, the responsive particles driving the organic material under the action of at least one of the electric field and the magnetic field to planarize the film to form a film structure.
  • an applied electric field and/or magnetic field can be applied in the process of pre-baking and baking the film.
  • At least one embodiment of the present disclosure further provides a method for fabricating an array substrate, the method comprising: providing a substrate; forming a film including an organic material and a responsive particle on the substrate; and applying at least an electric field and a magnetic field to the film First, the responsive particle drives the organic material to flow under the action of at least one of the electric field and the magnetic field to planarize the film to form an organic layer.
  • an array substrate as an organic light emitting diode (OLED) array substrate will be described as an example.
  • FIG. 2 is a flowchart of a method for fabricating an OLED array substrate according to an embodiment of the present disclosure. As shown in FIG. 2, the method for fabricating the OLED array substrate includes the following steps S100-S300:
  • Step S100 providing a substrate substrate
  • the base substrate may be a glass substrate, a quartz substrate, a plastic substrate, or the like.
  • Step S200 forming a thin film including an organic material and responsive particles on the base substrate;
  • the organic material is at least one of polymethyl methacrylate, polyimide, and silicone material. It should be noted that the organic material may also be any other suitable component, and embodiments of the present disclosure. There is no limit to this.
  • the responsive particles are configured to be movable under the action of at least one of an electric field and a magnetic field.
  • the responsive particles include electric field responsive particles and magnetic field responsive particles, ie, the responsive particles are responsive to an electric field, or may be responsive to a magnetic field, and the particle size of the responsive particles is nanometer, and the shape of the responsive particles may be spherical, ellipsoidal, or the like. Regular or irregular shape.
  • the responsive particle is configured to be movable under the action of at least one of an electric field and a magnetic field.
  • the electric field responsive particle refers to the particle being able to move under the action of an electric field.
  • the magnetic field responsive particle refers to the granule capable of Move under the action of a magnetic field.
  • the electric field responsive particles include titanium dioxide particles; the magnetic field responsive particles include ferroferric oxide particles or ferric oxide particles. It should be noted that the electric field responsive particles and the magnetic field responsive particles may also be in other applied electric and magnetic fields.
  • the responsive particles under the action of at least one of the embodiments of the present disclosure are not limited thereto.
  • the method before forming a thin film including an organic material and a responsive particle on a base substrate, the method further includes mixing the organic material and the responsive particles to form a material obtained by mixing the organic material and the responsive particles.
  • a material obtained by mixing the organic material and the responsive particles is coated on the base substrate.
  • a thin film transistor is further formed on the base substrate before the material obtained by mixing the organic material and the responsive particles is formed on the base substrate.
  • Step S300 applying at least one of an electric field and a magnetic field to the film, the responsive particle may drive the organic material to flow under the action of at least one of the electric field and the magnetic field, so that the film may be planarized to form an organic layer.
  • At least one of an electric field and a magnetic field is applied during a process of prebaking and baking the film.
  • the thin film transistor formed on the base substrate is a top gate type structure, that is, the thin film transistor includes an active layer, a gate insulating layer disposed on the active layer and covering the entire base substrate, and disposed on the gate insulating layer The upper gate electrode, the interlayer insulating layer disposed on the gate electrode and covering the entire substrate substrate, and the first source/drain electrodes and the second source/drain electrodes disposed on the interlayer insulating layer.
  • the thin film transistor disposed on the base substrate is generally composed of a plurality of film layers, such as a gate layer, a first source/drain electrode, a second source/drain electrode, and a gate insulating layer, and each layer Each of the film layers has a specific pattern.
  • a plurality of film layers are laminated together, a plurality of convex structures are formed, and the pattern of the convex structure is determined by the pattern of the respective film layers constituting the thin film transistor, and the protrusions are inevitably depressed.
  • the thin film transistor includes a plurality of recessed regions between the raised structures and the edges, the recessed regions have a depth of between 10 nanometers and 1 micrometer, and the depths of the different recessed regions may be the same or different. Therefore, there may be a difference in recessed regions on the thin film transistors formed by different fabrication processes. For example, the recessed regions may be determined according to the patterns constituting the respective film layers in the thin film transistor. Since the thin film transistor has a recessed region, the film which is formed on the thin film transistor and which has not been subjected to any treatment is also inevitably depressed, and thus there is a technical problem that the film layers on the thin film transistor are not flat.
  • the number of the recessed regions in the thin film transistor is plural, and the number of the recessed regions is determined by an actual manufacturing process, which is not limited by the embodiment of the present disclosure.
  • the thickness of the film of the organic material and the responsive particles included in the embodiment of the present disclosure is 1-3 micrometers, for example, 1 micrometer, 2 micrometers, or 3 micrometers.
  • the embodiment of the present disclosure does not limit the thickness of the film, and the thickness thereof can be determined according to actual needs.
  • the electric field and/or magnetic field applied to the film includes applying at least one of an applied electric field and a magnetic field outside the recessed region of the thin film transistor, and applying an applied electric field and/or a magnetic field.
  • the intensity is proportional to the depth of the recessed area, ie the deeper the depth of the recessed area, the greater the strength of the applied electric and/or magnetic field.
  • the outer side of the recessed area refers to all outer surfaces of the recessed area, that is, at least one of an applied electric field and a magnetic field is directly applied to the recessed area.
  • the electric field and/or magnetic field applied to the film includes: applying at least one of an electric field and a magnetic field on the outside of the thin film transistor, and applying an applied electric field and/or a magnetic field strength and a recessed area The depth is proportional.
  • outer side of the thin film transistor refers to all outer surfaces of the thin film transistor.
  • Embodiments of the present disclosure apply an electric field and/or a magnetic field to the outside of the recessed region of the thin film transistor in order to ensure that the responsive particles uniformly dispersed in the organic material can all gather at positions corresponding to the recessed regions of the thin film. It should be noted that if the intensity of the applied electric field and/or magnetic field is larger, the more responsive particles moving toward the corresponding position of the depressed region of the film, the movement of the responsive particles moving toward the corresponding position of the depressed region of the film. The more intense, the further movement of the organic material can be avoided, thereby avoiding the technical problem that the film is not flat due to the deep depth of the depressed region and the small number of responding particles. Thus, the film is further flattened in the unevenness.
  • the applied electric field and/or magnetic field is a directional electric field and/or a directional magnetic field
  • the direction of the directional electric field and/or the directional magnetic field is from the thin film transistor to the flat layer, or from the flat layer to the thin film. The direction of the transistor.
  • the responsive particles are concentrated toward the side of the film moving away from the side of the thin film transistor.
  • the direction of the directional electric field and/or the directional magnetic field is the direction of the flat layer to the thin film transistor, after the directional electric field and/or the directional magnetic field are applied, the responsive particles are condensed toward the side of the film adjacent to the thin film transistor, thereby concentrating, thereby driving the organic material. Move to the side away from the thin film transistor.
  • the electric field strength of the directional electric field is 200-1000 volts/cm
  • the magnetic field strength of the directional magnetic field is 200-1000 gauss.
  • the electric field strength of the directional electric field is 200 volts/cm, 400 volts/cm, 600 volts/cm, 800 volts/cm, and 1000 volts/cm
  • the magnetic field strength of the directional magnetic field is 200 gauss, 400 gauss, 600 gauss, 800 gauss. And 1000 Gauss.
  • Embodiments of the present disclosure do not limit the magnitude of the intensity of the directional electric field and/or the directional magnetic field.
  • a method for preparing an OLED array substrate provided by an embodiment of the present disclosure, by adding at least one of an electric field and a magnetic field to an responsive particle in an organic material, so that the response particle can be under the action of an applied electric field and/or a magnetic field Movement, and can drive the organic material to move along with the movement of the responsive particles, thereby achieving planarization of the organic layer, thereby making the thickness of other film layers prepared on the organic layer more uniform, and at the same time, improving the OLED device The uniformity of illumination of each pixel.
  • a method of fabricating an OLED array substrate provided by an embodiment of the present disclosure is further described below with reference to FIGS. 3(a) to 3(c).
  • Step S310 forming a thin film transistor 20 having a plurality of recessed regions 21 on the base substrate 10, and a schematic structural view thereof is shown in FIG. 3(a).
  • the substrate substrate 10 may be pre-cleaned before the thin film transistor 20 is formed on the base substrate 10.
  • the number of the recessed regions 21 is at least two, for example, three, four, six, and the like.
  • FIG. 3( a ) illustrates the three recessed regions as an example, and the embodiment of the present disclosure does not limit this.
  • step S310 further includes: depositing a buffer layer on the base substrate, the buffer layer functioning to prevent the active layer from being contaminated; and plasma-enhanced chemical vapor deposition on the buffer layer ( Plasma Enhanced Chemical Vapor Deposition (PECVD) deposits an amorphous silicon film, and then dehydrogenates the buffer layer; then, the amorphous silicon film is subjected to excimer laser crystallization to form polysilicon, followed by exposure and etching.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • a process of forming an active layer then, a gate insulating layer is deposited on the active layer by a PECVD process, a gate electrode is formed on the gate insulating layer, and a plasma implantation process is performed on the basis of the structure, using the gate electrode as a mask
  • the active layer is formed with source-drain P-type doping (source-drain P-type doping belongs to semiconductor doping process, plasma injection is used to make the semiconductor material conductive); deposition layer is deposited on the gate electrode by PECVD process
  • the interlayer insulating layer covers the entire substrate, and an exposure and etching process is performed on the basis of the structure to form a via structure.
  • a source/drain metal layer is deposited on the interlayer insulating layer by magnetron sputtering, and an exposure and etching process is performed to form first source/drain electrodes and second source/drain electrodes.
  • Step S320 mixing the organic material and the responsive particles; coating a thin film 301 comprising an organic material and responsive particles on the thin film transistor, the thin film 301 covering the entire base substrate 10, and the formed structure is as shown in FIG. 3(b).
  • the organic material, the electric field responsive particle, and the magnetic field responsive particle can be referred to the description of the above related content, and details are not described herein again.
  • the film formed on the thin film transistor has a thickness of 1-3 ⁇ m, and the film is formed by coating, for example, by a coating method such as spin coating, painting, or spray coating.
  • Step S330 applying an electric field and/or a magnetic field, causing the responsive particles to flow the organic material under the action of an applied electric field and/or a magnetic field to form the planarized organic layer 30.
  • the organic layer 30 is a flat layer, and the structure is as follows. Figure 3 (c).
  • the following description is made by taking the formed organic layer 30 as a flat layer.
  • an applied electric field and/or a magnetic field is applied outside the recessed region of the thin film transistor, and the direction of the electric field and/or the magnetic field may be
  • FIG. 3(c) is explained by taking the direction from the thin film transistor to the flat layer as an example.
  • the responsive particles are doped in the planarization layer to form a doped region, and the orthographic projection of the doped region on the substrate substrate covers the orthographic projection of the recessed region of the thin film transistor on the substrate substrate.
  • the "covering" in the orthographic projection of the recessed region of the doped region in the flat layer on the substrate substrate in the recessed region of the thin film transistor on the substrate substrate means that the doped region in the flat layer is
  • the orthographic projection area on the base substrate is equal to the orthographic projection area of the recessed region of the thin film transistor on the base substrate, that is, the orthographic projection of the doped region in the planar layer on the substrate substrate and the recessed region of the thin film transistor on the base substrate.
  • the orthographic projections on the top are completely overlapped, or the area of the doped region in the planar layer on the substrate is larger than the area of the orthographic projection of the recessed region of the thin film transistor on the substrate.
  • another embodiment of the present disclosure further provides a method for preparing an OLED array substrate, which is different from the method for preparing the OLED array substrate described above in:
  • Step S200 includes: coating a thin film transistor with a film including an organic material; and adding a responsive particle to the organic material.
  • the addition of the responsive particles to the organic film includes doping the responsive particles in the organic film by ink jet printing.
  • the thin film transistor in the embodiment of the present disclosure is a top gate structure
  • the thin film transistor includes: an active layer disposed on the base substrate, and a gate insulating layer disposed on the active layer and covering the entire base substrate, a gate electrode on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode and covering the entire substrate substrate, and first source/drain electrodes and second electrodes disposed on the interlayer insulating layer and electrically connected to the active layer Source/drain electrodes.
  • the thin film transistor may also be a bottom gate type structure, the gate electrode is disposed on the base substrate, the active layer is formed on the gate electrode and away from the substrate substrate, and the bottom gate type thin film transistor is
  • the gate electrode is disposed on the base substrate
  • the active layer is formed on the gate electrode and away from the substrate substrate
  • the bottom gate type thin film transistor is
  • the thin film transistor disposed on the base substrate is generally composed of a plurality of film layers, for example, a gate layer, a first source/drain electrode, a second source/drain electrode, and a gate insulating layer, and each of them
  • the film layers all have a specific pattern.
  • a plurality of film layers are laminated together, a plurality of convex structures are formed.
  • the pattern of the convex structure is determined by the pattern of the respective film layers constituting the thin film transistor, and the convex structure necessarily has a depression.
  • the thin film transistor includes a plurality of recessed regions between the raised structures and the edges, the recessed regions have a depth of between 10 nanometers and 1 micrometer, and the depths of the different recessed regions may be the same or different. Therefore, there is a possibility that the recessed regions on the thin film transistors formed by different fabrication processes are different. For example, the recessed regions may be determined according to the patterns constituting the respective film layers in the thin film transistor. Since the thin film transistor has a recessed region, the film which is formed on the thin film transistor without any treatment is also inevitably depressed, and thus there is a technical problem that the film layers on the thin film transistor are uneven and the thickness is not uniform.
  • the surface of the thin film transistor near one side of the thin film has a plurality of recessed regions; the orthographic projection of the doped region formed in the organic material in the organic material covers the recess in the thin film transistor The orthographic projection of the area on the substrate.
  • the "overlay" in the orthographic projection of the recessed region in the anomeric overlying thin film transistor of the doped region formed in the organic material in the organic material on the substrate substrate means: in the organic material
  • the orthographic projection area of the doped region on the base substrate is equal to the orthographic projection area of the recessed region of the thin film transistor on the substrate, that is, the orthographic projection of the doped region in the organic material on the substrate substrate and the recess of the thin film transistor
  • the orthographic projections of the regions on the substrate are completely overlapped, or the area of the doped regions in the organic material on the substrate is larger than the area of the orthographic projection of the recessed regions of the thin film transistors on the substrate.
  • the number of responsive particles doped in the doped region of the organic material is proportional to the depth of the recessed region, that is, the deeper the depth of the recessed region, the more the number of responsive particles doped in the doped region of the organic material Conversely, the shallower the depth of the recessed region, the less the number of responsive particles doped in the doped region of the organic material.
  • the thickness of the film of the organic material and the responsive particles included in the embodiment of the present disclosure is 1-3 micrometers, and the thickness of the film of the embodiment of the present disclosure is not specifically limited, and the thickness thereof may be determined according to actual needs.
  • applying at least one of an electric field and a magnetic field to the thin film in step S300 includes applying at least one of an applied electric field and a magnetic field to the outside of the thin film transistor, or in a recessed region of the thin film transistor. At least one of an applied electric field and a magnetic field is applied to the outside, and the intensity of the applied electric field and/or magnetic field is proportional to the depth of the recessed region.
  • the responsive particles in the embodiment of the present disclosure are at least doped at a position of the thin film corresponding to the recessed region
  • the electric field and/or the magnetic field in the embodiment of the present disclosure may be disposed throughout the thin film transistor
  • the outer side may also be disposed outside the recessed region of the thin film transistor.
  • the applied electric field and/or the magnetic field are directional electric fields and/or directional magnetic fields
  • the organic layer is a flat layer as an example.
  • the direction of the directional electric field and/or the directional magnetic field is from the thin film transistor to the flat layer, or from flat. Layer to the direction of the thin film transistor.
  • the direction of the directional electric field and/or the directional magnetic field is the direction of the thin film transistor to the planar layer
  • the responsive particles are concentrated toward the surface of the film moving away from the surface of the thin film transistor.
  • the direction of the directional electric field and/or the directional magnetic field is from the flat layer to the direction of the thin film transistor
  • the responsive particles are directional to the side of the film close to the thin film transistor, and then the organic material is driven. Move to the side away from the thin film transistor.
  • a method for fabricating an OLED array substrate according to another embodiment of the present disclosure is further described below with reference to FIGS. 4(a) to 4(c).
  • Step S410 forming a thin film transistor 20 having a plurality of recessed regions 21 on the base substrate 10, and forming a thin film 302 on the thin film transistor 20, the thin film 302 covering the entire base substrate 10, for example, as shown in FIG. 4(a) .
  • the material of the base substrate 10 can be referred to the related description above, and the substrate substrate 10 needs to be pre-cleaned before the thin film transistor is formed on the base substrate 10.
  • the number of the recessed regions 21 is at least two, and FIG. 4(a) is described by taking three recessed regions as an example.
  • the number of the recessed regions 21 is not limited in the embodiment of the present disclosure.
  • step of forming the thin film transistor in step S410 can refer to the related steps of the thin film transistor described in the above step S310, and details are not described herein again.
  • the thickness of the film is 1-3 ⁇ m
  • the film can be formed by coating, for example, by a coating method such as spin coating, painting, and spraying.
  • Step S420 doping the responsive particles in the organic material by means of inkjet printing, as shown in FIG. 4(b).
  • an orthographic projection of a doped region formed by doping a dopant in an organic material on a substrate substrate covers an orthographic projection of a recessed region in the thin film transistor on the substrate.
  • Step S430 applying an electric field and/or a magnetic field, causing the responsive particles to flow the organic material under the action of an applied electric field and/or a magnetic field to form a planarized organic layer 30, the structure of which is shown in FIG. 4(c).
  • an applied electric field and/or a magnetic field may be applied to the outside of the thin film transistor, or an applied electric field and/or a magnetic field may be applied outside the recessed region of the thin film transistor, and FIG. 4(c) is the entire thin film transistor.
  • the application of an electric field and/or a magnetic field on the outside is described as an example.
  • the organic layer 30 may be a flat layer, a pixel defining layer, a passivation layer, or the like.
  • the applied electric field and/or magnetic field is a directional electric field and/or a magnetic field
  • the direction of the directional electric field and/or the directional magnetic field is from the thin film transistor to the flat layer or from the flat layer.
  • FIG. 4(c) is explained by taking the direction from the thin film transistor to the flat layer as an example.
  • FIG. 5 is a schematic structural view of a film structure, as shown in FIG. 5, the film structure 1 includes: an organic material 11 and a responsive particle 12, and the responsive particle 12 has a force at least one of an electric field and a magnetic field.
  • the organic material 11 is driven to flow to form the film structure 1.
  • the responsive particles are configured to be movable under a force of at least one of an electric field and a magnetic field.
  • FIG. 6 is a schematic structural diagram of an OLED array substrate according to at least one embodiment of the present disclosure.
  • an OLED array substrate provided by an embodiment of the present disclosure is prepared by using the method for preparing the OLED array substrate.
  • the array substrate includes any of the above-mentioned film layer structures, and the implementation principle and the implementation effect thereof are similar, and details are not described herein again.
  • the OLED array substrate provided by the embodiment of the present disclosure includes: a base substrate 10, a thin film transistor 20 having a plurality of recessed regions 21 disposed on an upper surface of the base substrate 10, and a remote substrate disposed on the thin film transistor 20.
  • the organic layer 30 on the one side of 10, for example, the organic layer is a flat layer.
  • At least one embodiment of the present disclosure also provides a display panel including any of the above array substrates.
  • a display panel including any of the above array substrates.
  • At least one embodiment of the present disclosure also provides a display device including any of the above array substrates.
  • the display substrate provided by the embodiment of the present disclosure includes an array substrate, and the implementation principle and implementation effect thereof can be referred to the related description in the above, and details are not described herein again.
  • the display device may be any product or component having a display function such as a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • a display function such as a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • An array substrate, a preparation method thereof, a film layer structure and a display device provided by at least one embodiment of the present disclosure have at least one of the following beneficial effects:
  • an external electric field and/or a magnetic field is applied by adding a particle responsive to at least one of an electric field and a magnetic field to the organic material. Lowering, in response to the movement of the particles, and driving the organic material to move in response to the movement of the particles, thereby achieving planarization of the film structure;
  • a method for preparing a film layer structure provided by at least one embodiment of the present disclosure so that other film layers prepared on the organic layer are also more uniform, and at the same time, uniformity of light emission in each pixel in the OLED device can be improved.

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Abstract

本公开的实施例提供了一种阵列基板及其制备方法、显示装置，该阵列基板的制备方法包括：提供衬底基板（10），在所述衬底基板（10）上形成包括有机材料和响应颗粒的薄膜（301）；对所述薄膜（301）施加电场和磁场中至少之一，所述响应颗粒在所述电场和所述磁场中至少之一的作用下带动所述有机材料流动，使所述薄膜（301）平坦化以形成所述有机层（30），本公开的实施例通过在有机材料中添加对电场和磁场中的至少之一进行响应的颗粒，使得在外加电场和/或磁场的作用下，响应颗粒运动，并带动有机材料随着响应颗粒的运动而运动，从而实现了有机层（30）的平坦化，进而使得在该有机层（30）上制备的其他膜层也更加均匀。

Description

阵列基板及其制备方法、显示装置
本申请要求于2017年7月20日递交的中国专利申请第201710599383.2号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及一种阵列基板及其制备方法、显示装置。
背景技术
在显示技术领域中，电致发光二极管，例如有机发光二极管(Organic Light-Emitting Diode，简称OLED)相对于液晶显示器(Liquid Crystal Display，简称LCD)，具有自发光、反应快、视角广、亮度高、色彩艳、轻薄等优点。
例如，根据耦合方式的不同，OLED显示器件可以分为顶发射型OLED显示器件和底发射型OLED显示器件。在顶发射型OLED显示器件的制备过程中，需要在薄膜晶体管(Thin Film Transistor，简称TFT)上制作OLED显示器件的功能层，各个功能层大多采用有机材料形成，然而，各个功能层的平坦性和厚度的均一性有待提高。
发明内容
本公开至少一实施例提供一种阵列基板的制备方法，该阵列基板的制备方法包括：提供衬底基板；在所述衬底基板上形成包括有机材料和响应颗粒的薄膜；对所述薄膜施加电场和磁场中至少之一，所述响应颗粒在所述电场和所述磁场中至少之一的作用力下带动所述有机材料流动，使所述薄膜平坦化以形成有机层。
例如，在本公开至少一实施例提供的制备方法中，所述响应颗粒配置为在所述电场和所述磁场中至少之一的作用力下可移动。
例如，在本公开至少一实施例提供的制备方法中，在所述形成包括有机材料和响应颗粒的薄膜之前，还包括：将所述有机材料和所述响应颗粒混合。
例如，在本公开至少一实施例提供的制备方法中，所述形成包括有机材料和响应颗粒的薄膜包括：采用有机材料形成有机薄膜；在所述有机薄膜中加入所述响应颗粒。
例如，在本公开至少一实施例提供的制备方法中，在所述有机薄膜中加入所述响应颗粒，包括：通过喷墨打印的方式在所述有机薄膜中掺杂所述响应颗粒。
例如，本公开至少一实施例提供的制备方法还包括：在所述衬底基板上形成薄膜晶体管，所述薄膜晶体管靠近所述薄膜的一侧的表面具有凹陷区域。
例如，在本公开至少一实施例提供的制备方法中，所述响应颗粒在所述有机材料中掺杂形成掺杂区域，所述掺杂区域在所述衬底基板上的正投影覆盖所述凹陷区域在所述衬底基板上的正投影。
例如，在本公开至少一实施例提供的制备方法中，在所述掺杂区域中掺杂的所述响应颗粒的数量与所述凹陷区域的深度呈正比。
例如，在本公开至少一实施例提供的制备方法中，对所述薄膜施加电场和磁场中至少之一，包括：在所述薄膜晶体管的所述凹陷区域的外侧施加所述电场和所述磁场中至少之一。
例如，在本公开至少一实施例提供的制备方法中，施加的所述电场和/或所述磁场的强度与所述凹陷区域的深度呈正比。
例如，在本公开至少一实施例提供的制备方法中，对所述薄膜施加电场和磁场中至少之一，包括：在所述薄膜晶体管的外侧施加所述电场和所述磁场中至少之一。
例如，在本公开至少一实施例提供的制备方法中，施加的所述电场和所述磁场的强度与所述凹陷区域的深度呈正比。
例如，在本公开至少一实施例提供的制备方法中，所述电场和所述磁场为定向电场和定向磁场，所述定向电场和所述定向磁场的方向为从所述薄膜晶体管到所述有机层的方向，或者从所述有机层到所述薄膜晶体管的方向。
例如，在本公开至少一实施例提供的制备方法中，所述定向电场的电场强度为200-1000伏/厘米，所述定向磁场的磁场强度为200-1000高斯。
例如，在本公开至少一实施例提供的制备方法中，所述响应颗粒包括电场响应颗粒和磁场响应颗粒，所述电场响应颗粒包括二氧化钛颗粒；所述磁 场响应颗粒包括四氧化三铁颗粒和三氧化二铁颗粒中的至少之一。
例如，在本公开至少一实施例提供的制备方法中，所述有机材料包括:聚甲基丙烯酸甲酯、聚酰亚胺和有机硅材料中的至少之一。
本公开至少一实施例还提供一种阵列基板，该阵列基板包括：衬底基板；位于所述衬底基板上的膜层结构，其中，所述膜层结构包括有机材料和响应颗粒，所述响应颗粒在电场和磁场中至少之一的作用力下带动所述有机材料流动。
例如，在本公开至少一实施例提供的阵列基板中，所述响应颗粒配置为在所述电场和所述磁场中至少之一的作用力下可移动。
本公开至少一实施例还提供一种显示装置，该显示装置包括上述任一种阵列基板。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为本公开一实施例提供的一种膜层结构的制备方法的流程图；
图2为本公开一实施例提供的一种OLED阵列基板的制备方法的流程图；
图3(a)为本公开一实施例提供的一种OLED阵列基板的制备方法的示意图一；
图3(b)为本公开一实施例提供的一种OLED阵列基板的制备方法的示意图二；
图3(c)为本公开一实施例提供的一种OLED阵列基板的制备方法的示意图三；
图4(a)为本公开一实施例提供的另一种OLED阵列基板的制备方法的示意图一；
图4(b)为本公开一实施例提供的另一种OLED阵列基板的制备方法的示意图二；
图4(c)为本公开一实施例提供的另一种OLED阵列基板的制备方法示意图三；
图5为本公开一实施例提供的一种膜层结构的结构示意图；以及
图6为本公开一实施例提供的一种OLED阵列基板的截面结构示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
电致发光显示器件，例如，有机发光二极管(OLED)显示器件中功能层的成膜方式主要包括蒸镀方法和溶液方法，其中，蒸镀方法适用于有机小分子，其特点是形成有机薄膜的过程中不需要溶剂，但所使用的生产设备昂贵，生产成本大，该方法不适用于大尺寸电子产品的生产，也不适用于大规模生产；溶液方法的成膜方式适用于聚合物材料和可溶性小分子，溶液方法主要包括：喷墨打印、旋涂、喷嘴涂覆、丝网印刷等技术，其特点是设备成本低，在大规模生产和大尺寸产品的生产上优势突出，因此，一般采用溶液方法中的喷墨打印方法制备OLED显示器件的功能层。一方面，衬底基板上已经形成的各层结构对喷墨打印形成的有机薄膜的分布的影响较大；另一方面，由于溶液方法中有机材料形成的液滴具有自由流动的特点，也会影响最终形成的有机膜层的平坦性和厚度的均一性。如果某一有机膜层的平坦性较差，会进一步地影响后续形成的膜层的厚度的均匀 性，从而导致OLED显示器件中像素发光不均匀的问题。
本公开的发明人注意到，可以通过在有机材料中添加对电场和磁场中的至少之一进行响应的颗粒，使得在外加电场和磁场中的至少之一的作用下，响应颗粒运动，并带动有机材料随着响应颗粒的运动而运动，从而可以实现有机层的平坦化，进而使得在该有机层上制备的其他膜层的厚度也更加均匀，同时，还可以提高OLED器件中像素发光的均匀性。
例如，本公开至少一实施例提供了一种有机层的制备方法，该制备方法包括：在衬底基板上形成包括有机材料和响应颗粒的薄膜，对薄膜施加电场和磁场中的至少之一，该响应颗粒在电场和磁场中的至少之一的作用下带动有机材料流动，使形成的薄膜平坦化以形成有机层。
例如，图1为本公开一实施例提供的一种膜层结构的制备方法的流程图，如图1所示，该有机层的制备方法包括以下步骤S10和S20：
步骤S10：在衬底基板上形成包括有机材料和响应颗粒的薄膜；
例如，该有机材料为聚甲基丙烯酸甲酯、聚酰亚胺、有机硅材料中的至少之一，需要说明的是，该有机材料还可以是任意其他符合要求的成分，在此不做限定。
例如，响应颗粒包括电场响应颗粒和磁场响应颗粒，即响应颗粒为可以响应电场，或者可以响应磁场，且响应颗粒的粒径为纳米级别，响应颗粒的形状可以是球形、椭球型或者其他的规则或者不规则的形状。
需要说明的是，响应颗粒配置为在电场和磁场中的至少之一的作用下可移动，例如，电场响应颗粒指的是颗粒能够在电场的作用下移动，同理，磁场响应颗粒指的是颗粒能够在磁场的作用下移动。
例如，电场响应颗粒包括二氧化钛颗粒；磁场响应颗粒包括四氧化三铁颗粒或三氧化二铁颗粒，需要说明的是，该电场响应颗粒和磁场响应颗粒还可以为其他的能够在外加电场和磁场中的至少之一的作用下响应的颗粒，本公开的实施例对此不做限定。
例如，该衬底基板可以为玻璃基板、石英基板以及塑料基板等。
例如，在本公开的一个示例中，在形成包括有机材料和响应颗粒的薄膜之前，还包括将有机材料和响应颗粒混合，将有机材料和响应颗粒混合后的材料形成于衬底基板上。例如，将有机材料和响应颗粒混合后的材料涂覆于衬底基板上。
例如，在本公开的另一个示例中，形成包括有机材料和响应颗粒的薄膜包括先采用有机材料形成有机薄膜，然后在该有机薄膜中加入响应颗粒。
例如，在该有机薄膜中加入响应颗粒包括：通过喷墨打印的方式在有机薄膜中掺杂响应颗粒。
步骤S20：对薄膜施加电场和磁场中至少之一，该响应颗粒在电场和磁场中至少之一的作用下带动有机材料流动，使薄膜平坦化以形成膜层结构。
例如，可以在对薄膜进行预烘烤和烘烤的工艺中施加外加电场和/或磁场。
本公开至少一实施例还提供一种阵列基板的制备方法，该制备方法包括：提供衬底基板；在衬底基板上形成包括有机材料和响应颗粒的薄膜；对薄膜施加电场和磁场中至少之一，该响应颗粒在该电场和磁场中的至少之一的作用下带动该有机材料流动，使该薄膜平坦化以形成有机层。以下以阵列基板为有机发光二极管(OLED)阵列基板为例加以说明。
例如，图2为本公开一实施例提供的一种OLED阵列基板的制备方法流程图，如图2所示，该OLED阵列基板的制备方法包括以下步骤S100-S300：
步骤S100：提供衬底基板；
例如，该衬底基板可以为玻璃基板、石英基板以及塑料基板等。
步骤S200：在衬底基板上形成包括有机材料和响应颗粒的薄膜；
例如，该有机材料为聚甲基丙烯酸甲酯、聚酰亚胺、有机硅材料中的至少之一，需要说明的是，该有机材料还可以是任意其他符合要求的成分，本公开的实施例对此不做限定。
例如，响应颗粒配置为在电场和磁场中的至少之一的作用下可移动。
例如，响应颗粒包括电场响应颗粒和磁场响应颗粒，即响应颗粒为可以响应电场，或者可以响应磁场，且响应颗粒的粒径为纳米级别，响应颗粒的形状可以是球形、椭球型或者其他的规则或者不规则的形状。
需要说明的是，响应颗粒配置为在电场和磁场中至少之一的作用下可移动，例如，电场响应颗粒指的是颗粒能够在电场作用下移动，同理，磁场响应颗粒指的是颗粒能够在磁场作用下移动。
例如，电场响应颗粒包括二氧化钛颗粒；磁场响应颗粒包括四氧化三 铁颗粒或三氧化二铁颗粒，需要说明的是，该电场响应颗粒和磁场响应颗粒还可以为其他的能够在外加电场和磁场中的至少之一的作用下响应的颗粒，本公开的实施例对此不做限定。
例如，在本公开的实施例的一个示例中，在衬底基板上形成包括有机材料和响应颗粒的薄膜之前，还包括将有机材料和响应颗粒混合，将有机材料和响应颗粒混合后的材料形成于衬底基板上，例如，将有机材料和响应颗粒混合后的材料涂覆于衬底基板上。
示例性地，在将有机材料和响应颗粒混合后的材料形成于衬底基板上之前，该衬底基板上还形成有薄膜晶体管。
步骤S300：对薄膜施加电场和磁场中的至少之一，该响应颗粒在电场和磁场中的至少之一的作用下可以带动有机材料流动，从而可以使薄膜平坦化以形成有机层。
例如，在对薄膜进行预烘烤和烘烤的工艺过程中施加电场和磁场中至少之一。
例如，在衬底基板上形成的薄膜晶体管为顶栅型结构，即该薄膜晶体管包括：有源层，设置在有源层上并覆盖整个衬底基板上的栅绝缘层，设置在栅绝缘层上的栅电极，设置在栅电极上的并覆盖整个衬底基板的层间绝缘层以及设置在该层间绝缘层上的第一源/漏电极和第二源/漏电极。
需要说明的是，由于设置在衬底基板上的薄膜晶体管一般由多个膜层构成，例如栅极、第一源/漏电极、第二源/漏电极以及栅绝缘层等膜层，而每个膜层都具有特定的图形，多个膜层叠加到一起就会出现多个凸起结构，凸起结构的图形是由构成薄膜晶体管的各个膜层的图形决定的，存在凸起必然存在凹陷，因此，薄膜晶体管中包括位于凸起结构之间及边缘的多个凹陷区域，凹陷区域的深度为10纳米-1微米之间，且不同的凹陷区域的深度可能相同也可能不同。因此，采用不同的制作工艺形成的薄膜晶体管上的凹陷区域有可能存在不同。例如，可以根据构成薄膜晶体管中的各个膜层的图形来确定凹陷区域。由于薄膜晶体管存在凹陷区域，导致形成在薄膜晶体管上的未经过任何处理的薄膜也必然存在凹陷，因而出现了薄膜晶体管上各膜层不平坦的技术问题。
例如，薄膜晶体管中的凹陷区域的数量为多个，凹陷区域的数量由实际制备工艺确定，本公开的实施例对此不做限定。
例如，本公开的实施例中包括的有机材料和响应颗粒的薄膜的厚度为1-3微米，例如，1微米、2微米或者3微米。本公开的实施例对该薄膜的厚度不做限定，其厚度可以根据实际需求确定。
例如，在本公开的实施例中，对薄膜施加的电场和/或磁场包括：在薄膜晶体管的凹陷区域的外侧施加外加电场和磁场中的至少之一，且施加的外加电场和/或磁场的强度与凹陷区域的深度呈正比，即凹陷区域的深度越深，需要施加的电场和/或磁场的强度越大。
需要说明的是，凹陷区域的外侧是指凹陷区域的所有外表面，即外加电场和磁场中的至少之一直接施加到凹陷区域处。
例如，在本公开的实施例中，对薄膜施加的电场和/或磁场包括：在薄膜晶体管的外侧施加电场和磁场中的至少之一，且施加的外加电场和/或磁场的强度与凹陷区域的深度呈正比。
需要说明的是，薄膜晶体管的外侧是指薄膜晶体管的所有外表面。
本公开的实施例在薄膜晶体管的凹陷区域的外侧施加电场和/或磁场是为了保证均匀散布在有机材料中的响应颗粒能够都向薄膜的凹陷区域对应的位置处聚集。需要说明的是，如果施加的电场和/或磁场的强度越大，则向薄膜的凹陷区域对应的位置处运动的响应颗粒越多，向薄膜的凹陷区域对应的位置处运动的响应颗粒的运动就越剧烈，能够进一步地带动有机材料的运动，从而避免了由于凹陷区域深度较深，响应颗粒数量较少导致的薄膜不平坦的技术问题。这样，薄膜在不平坦处得到了进一步的平坦化。
例如，当有机层为平坦层时，外加电场和/或磁场为定向电场和/或定向磁场，定向电场和/或定向磁场的方向为从薄膜晶体管到平坦层的方向，或者从平坦层到薄膜晶体管的方向。
例如，如果定向电场和/或定向磁场的方向为薄膜晶体管到平坦层的方向，则施加定向电场和/或定向磁场之后，响应颗粒向薄膜的远离薄膜晶体管的一侧定向运动而聚集。如果定向电场和/或定向磁场的方向为平坦层到薄膜晶体管的方向，则施加定向电场和/或定向磁场之后，响应颗粒向薄膜的靠近薄膜晶体管的一侧定向运动而聚集，从而带动有机材料向远离薄膜晶体管的一侧运动。
例如，定向电场的电场强度为200-1000伏/厘米，定向磁场的磁场强度为200-1000高斯。
例如，定向电场的电场强度为200伏/厘米、400伏/厘米、600伏/厘米、800伏/厘米和1000伏/厘米，定向磁场的磁场强度为200高斯、400高斯、600高斯、800高斯和1000高斯。本公开的实施例并不限定定向电场和/或定向磁场的强度的大小。
本公开的实施例提供的OLED阵列基板的制备方法，通过在有机材料中添加对电场和磁场中的至少之一对响应颗粒进行响应，使得在外加电场和/或磁场的作用下，响应颗粒能够运动，并且能够带动有机材料随着响应颗粒的运动而运动，从而实现了有机层的平坦化，进而使得在该有机层上制备的其他膜层的厚度也更加均匀，同时，还可以提高OLED器件中各个像素发光的均匀性。
下面结合图3(a)-图3(c)，进一步地描述了本公开的实施例提供的OLED阵列基板的制备方法。
步骤S310、在衬底基板10上形成具有多个凹陷区域21的薄膜晶体管20，其结构示意图如图3(a)所示。
例如，在本公开的实施例中，在衬底基板10上形成薄膜晶体管20之前可以对衬底基板10进行预清洗。
例如，凹陷区域21的数量至少为2个，例如，3个、4个、6个等。图3(a)是以3个凹陷区域为例进行说明的，本公开的实施例对此不做限定。
例如，在本公开的实施例中，步骤S310还包括：在衬底基板上沉积缓冲层，该缓冲层的作用是防止有源层被污染；在缓冲层上以等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition，简称PECVD)沉积非晶硅薄膜，然后对缓冲层进行脱氢处理；接着，对非晶硅薄膜进行准分子激光晶化处理，使其形成多晶硅，之后进行曝光以及刻蚀工艺，形成有源层；然后，采用PECVD工艺在有源层上沉积栅绝缘层，在栅绝缘层上形成栅电极，在此结构的基础上进行等离子体注入工艺，以栅电极作为掩膜板，使有源层形成源漏P型掺杂(源漏P型掺杂属于半导体掺杂工艺，采用等离子体注入的方式，其目的是使半导体材料导电)；以PECVD工艺在栅电极上沉积层间绝缘层，层间绝缘层覆盖整个衬底基板，并在该结构的基础上进行曝光和刻蚀工艺，形成过孔结构。以磁控溅射的方法在层间绝缘层上沉积源/漏金属层，并进行曝光和刻蚀工艺，以形 成第一源/漏电极和第二源/漏电极。
步骤S320、将有机材料和响应颗粒混合；在薄膜晶体管上涂覆包括有机材料和响应颗粒的薄膜301，该薄膜301覆盖整个衬底基板10，形成的结构如图3(b)所示。
例如，有机材料、电场响应颗粒和磁场响应颗粒可以参见上述相关内容的描述，在此不再赘述。
需要说明的是，在薄膜晶体管上形成的薄膜的厚度为1-3微米，采用涂覆的方式形成该薄膜，例如，采用旋涂、涂刷和喷涂等涂覆方法。
步骤S330、施加电场和/或磁场，使响应颗粒在外加电场和/或磁场的作用下带动有机材料流动，形成平坦化后的有机层30，例如，该有机层30为平坦层，其结构如图3(c)所示。
例如，以下以形成的有机层30为平坦层为例加以说明，在本公开的实施例中，在薄膜晶体管的凹陷区域的外侧施加外加电场和/或磁场，且电场和/或磁场的方向可以为从薄膜晶体管到平坦层的方向，或者从平坦层到薄膜晶体管的方向，图3(c)是以从薄膜晶体管到平坦层的方向为例进行说明的。
示例性地，响应颗粒在平坦层中掺杂形成掺杂区域，掺杂区域在衬底基板上的正投影覆盖薄膜晶体管的凹陷区域在衬底基板上的正投影。
需要说明的是，平坦层中的掺杂区域在衬底基板上的正投影覆盖薄膜晶体管的凹陷区域在衬底基板上的正投影中的“覆盖”是指：平坦层中的掺杂区域在衬底基板上的正投影面积等于薄膜晶体管的凹陷区域在衬底基板上的正投影面积，即平坦层中的掺杂区域在衬底基板上的正投影与薄膜晶体管的凹陷区域在衬底基板上的正投影完全重叠，或者，平坦层中的掺杂区域在衬底基板上的正投影面积大于薄膜晶体管的凹陷区域在衬底基板上的正投影的面积。
例如，本公开的另一个实施例还提供了另外一种OLED阵列基板的制备方法，与上述OLED阵列基板的制备方法的不同之处在于：
步骤S200包括：在薄膜晶体管上涂覆包括有机材料的薄膜；在有机材料中加入响应颗粒。
例如，在该有机薄膜中加入响应颗粒包括：通过喷墨打印的方式在有机薄膜中掺杂响应颗粒。
例如，本公开的实施例中的薄膜晶体管为顶栅结构，薄膜晶体管包括：设置在衬底基板上的有源层，设置在有源层上并覆盖整个衬底基板的栅绝缘层，设置在栅绝缘层上的栅电极，设置在栅电极上的并覆盖整个衬底基板的层间绝缘层以及设置在层间绝缘层上并与有源层电连接的第一源/漏电极和第二源/漏电极。
需要说明的是，该薄膜晶体管也可以为底栅型结构，栅电极设置在衬底基板上，有源层形成在栅电极上且远离衬底基板的一侧，底栅型结构的薄膜晶体管的其他结构的设置可以参见上述顶栅型结构的相关描述，在此不再赘述。
还需要说明的是，由于设置在衬底基板上的薄膜晶体管一般由多个膜层构成，例如栅极、第一源漏电极、第二源漏电极以及栅绝缘层等膜层，而每个膜层都具有特定的图形，多个膜层叠加到一起就会出现多个凸起结构，凸起结构的图形是由构成薄膜晶体管的各个膜层的图形决定的，存在凸起结构必然存在凹陷区域，因此，薄膜晶体管中包括位于凸起结构之间及边缘的多个凹陷区域，凹陷区域的深度为10纳米-1微米之间，且不同的凹陷区域的深度可能相同也可能不相同。因此，不同的制作工艺形成的薄膜晶体管上的凹陷区域有可能存在不同，例如，可以根据构成薄膜晶体管中各个膜层的图形来确定凹陷区域。由于薄膜晶体管存在凹陷区域，导致形成在薄膜晶体管上的未经过任何处理的薄膜也必然存在凹陷，因而出现了薄膜晶体管上各膜层不平坦和厚度不均匀的技术问题。
例如，在本公开的实施例中，薄膜晶体管靠近薄膜的一侧的表面具有多个凹陷区域；响应颗粒在有机材料中形成的掺杂区域在衬底基板上的正投影覆盖薄膜晶体管中的凹陷区域在衬底基板上的正投影。
需要说明的是，响应颗粒在有机材料中形成的掺杂区域在衬底基板上的正投影覆盖薄膜晶体管中的凹陷区域在衬底基板上的正投影中的“覆盖”是指：有机材料中的掺杂区域在衬底基板上的正投影面积等于薄膜晶体管的凹陷区域在衬底基板上的正投影面积，即有机材料中的掺杂区域在衬底基板上的正投影与薄膜晶体管的凹陷区域在衬底基板上的正投影完全重叠，或者，有机材料中的掺杂区域在衬底基板上的正投影面积大于薄膜晶体管的凹陷区域在衬底基板上的正投影的面积。
例如，在有机材料的掺杂区域中掺杂的响应颗粒的数量与凹陷区域的 深度呈正比，即凹陷区域的深度越深，在有机材料的掺杂区域中掺杂的响应颗粒的数量越多，相反的，凹陷区域的深度越浅，在有机材料的掺杂区域中掺杂的响应颗粒的数量越少。
例如，本公开的实施例中包括的有机材料和响应颗粒的薄膜的厚度为1-3微米，本公开的实施例对该薄膜的厚度不做具体的限定，其厚度可以根据实际需求确定。
例如，在本公开至少一实施例中，步骤S300中对薄膜施加电场和磁场中至少之一包括：在薄膜晶体管的外侧施加外加电场和磁场中的至少之一，或者在薄膜晶体管的凹陷区域的外侧施加外加电场和磁场中的至少之一，且施加的电场和/或磁场的强度与凹陷区域的深度呈正比。
示例性地，由于本公开的实施例中的响应颗粒至少是掺杂在薄膜的与凹陷区域对应的位置处，因此，本公开的实施例中的电场和/或磁场可以设置在整个薄膜晶体管的外侧，也可以设置在薄膜晶体管的凹陷区域的外侧。
需要说明的是，如果施加的外加电场和/或磁场的强度越大，则向薄膜的凹陷区域对应的位置处运动的响应颗粒的运动就越剧烈，能够更加的带动有机材料的运动，从而进一步地提升了薄膜不平坦处的平坦化。
例如，外加电场和/或磁场为定向电场和/或定向磁场，以有机层为平坦层为例加以说明，定向电场和/或定向磁场的方向为从薄膜晶体管到平坦层的方向，或者从平坦层到薄膜晶体管的方向。
例如，如果定向电场和/或定向磁场的方向为薄膜晶体管到平坦层的方向，则施加定向电场和/或定向磁场之后，响应颗粒向薄膜的远离薄膜晶体管的表面定向运动而聚集。如果定向电场和/或定向磁场的方向为平坦层到薄膜晶体管的方向，则施加定向电场和/或定向磁场之后，响应颗粒向薄膜的靠近薄膜晶体管的一侧定向运动而聚集，进而带动有机材料向远离薄膜晶体管的一侧运动。
下面结合图4(a)-图4(c)，进一步地说明本公开的另一个实施例提供的OLED阵列基板的制备方法。
步骤S410、在衬底基板10上形成具有多个凹陷区域21的薄膜晶体管20，在薄膜晶体管20上形成薄膜302，该薄膜302覆盖整个衬底基板10，例如，如图4(a)所示。
该衬底基板10的材料可以参见上述中的相关描述，在衬底基板10上 形成薄膜晶体管之前需要对衬底基板10进行预清洗。
例如，凹陷区域21的数量至少为2个，图4(a)是以3个凹陷区域为例进行说明的，本公开的实施例对凹陷区域21的数量并不限定。
在本公开的实施例中，步骤S410中形成薄膜晶体管的步骤可以参见上述步骤S310中描述的薄膜晶体管的相关步骤，在此不再赘述。
例如，薄膜的厚度为1-3微米，可以采用涂覆方式形成薄膜，例如，采用旋涂、涂刷和喷涂等涂覆方法。
步骤S420、通过喷墨打印的方式在有机材料中掺杂响应颗粒，具体如图4(b)所示。
例如，在本公开的实施例中，响应颗粒在有机材料中掺杂形成的掺杂区域在衬底基板上的正投影覆盖薄膜晶体管中的凹陷区域在衬底基板上的正投影。
步骤S430、施加电场和/或磁场，使响应颗粒在外加电场和/或磁场的作用下带动有机材料流动，形成平坦化后的有机层30，其结构如图4(c)所示。
在本公开的实施例中，可以在薄膜晶体管的外侧施加外加电场和/或磁场，或者在薄膜晶体管的凹陷区域的外侧施加外加电场和/或磁场，图4(c)是以在整个薄膜晶体管的外侧施加电场和/或磁场为例进行说明的。
例如，该有机层30可以为平坦层、像素界定层或者钝化层等。
例如，以有机层30为平坦层为例加以说明，外加电场和/或磁场为定向电场和/或磁场，定向电场和/或定向磁场的方向为从薄膜晶体管到平坦层方向，或者从平坦层到薄膜晶体管的方向，图4(c)是以从薄膜晶体管到平坦层的方向为例进行说明的。
本公开至少一实施例还提供一种阵列基板，该阵列基板包括衬底基板和设置在衬底基板上的膜层结构。例如，图5为一种膜层结构的结构示意图，如图5所示，该膜层结构1包括：有机材料11和响应颗粒12，该响应颗粒12在电场和磁场中至少之一的作用力下带动有机材料11流动，以形成该膜层结构1。
例如，在本公开至少一实施例提供的阵列基板中，该响应颗粒配置为在电场和磁场中至少之一的作用力下可移动。
例如，图6为本公开至少一实施例提供的一种OLED阵列基板的结构 示意图，如图6所示，本公开的实施例提供的OLED阵列基板采用上述中OLED阵列基板的制备方法进行制备，且该阵列基板包括上述任一种膜层结构，其实现原理和实现效果类似，在此不再赘述。
例如，本公开的实施例提供的OLED阵列基板包括：衬底基板10，设置在衬底基板10上表面的具有多个凹陷区域21的薄膜晶体管20，以及设置在薄膜晶体管20的远离衬底基板10一侧的有机层30，例如，该有机层为平坦层。
本公开至少一实施例还提供一种显示面板，该显示面板包括采用上述任一阵列基板。该显示面板的实现原理和实现效果可以参见上述中的相关描述，在此不再赘述。
本公开至少一实施例还提供了一种显示装置，该显示装置包括上述任一阵列基板。
例如，本公开的实施例提供的显示装置包括的阵列基板，其实现原理和实现效果可以参见上述中的相关描述，在此不再赘述。
例如，该显示装置可以为：液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本公开至少一实施例提供的一种阵列基板及其制备方法、膜层结构以及显示装置具有以下至少一项有益效果：
(1)在本公开至少一实施例提供的膜层结构的制备方法中，通过在有机材料中添加对电场和磁场中的至少之一进行响应的颗粒，使得在外加电场和/或磁场的作用下，响应颗粒运动，并带动有机材料随着响应颗粒的运动而运动，从而实现了膜层结构的平坦化；
(2)本公开至少一实施例提供的膜层结构的制备方法，使得在该有机层上制备的其他膜层也更加均匀，同时，还可以提高OLED器件中各个像素内发光的均匀性。
有以下几点需要说明：
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。可以理解， 当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(3)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (19)

  1. 一种阵列基板的制备方法，包括：
    提供衬底基板；
    在所述衬底基板上形成包括有机材料和响应颗粒的薄膜；
    对所述薄膜施加电场和磁场中至少之一，所述响应颗粒在所述电场和所述磁场中至少之一的作用力下带动所述有机材料流动，使所述薄膜平坦化以形成有机层。
  2. 根据权利要求1所述的制备方法，其中，所述响应颗粒配置为在所述电场和所述磁场中至少之一的作用力下可移动。
  3. 根据权利要求1所述的制备方法，其中，在所述形成包括有机材料和响应颗粒的薄膜之前，还包括：将所述有机材料和所述响应颗粒混合。
  4. 根据权利要求1～3中任一项所述的制备方法，其中，所述形成包括有机材料和响应颗粒的薄膜包括：采用有机材料形成有机薄膜；在所述有机薄膜中加入所述响应颗粒。
  5. 根据权利要求4所述的制备方法，其中，在所述有机薄膜中加入所述响应颗粒，包括：通过喷墨打印的方式在所述有机薄膜中掺杂所述响应颗粒。
  6. 根据权利要求5所述的制备方法，还包括在所述衬底基板上形成薄膜晶体管，所述薄膜晶体管靠近所述薄膜的一侧的表面具有凹陷区域。
  7. 根据权利要求6所述的制备方法，其中，所述响应颗粒在所述有机材料中掺杂形成掺杂区域，所述掺杂区域在所述衬底基板上的正投影覆盖所述凹陷区域在所述衬底基板上的正投影。
  8. 根据权利要求7所述的制备方法，其中，在所述掺杂区域中掺杂的所述响应颗粒的数量与所述凹陷区域的深度呈正比。
  9. 根据权利要求6或7所述的制备方法，其中，对所述薄膜施加电场和磁场中至少之一，包括：在所述薄膜晶体管的所述凹陷区域的外侧施加所述电场和所述磁场中至少之一。
  10. 根据权利要求9所述的制备方法，其中，施加的所述电场和/或所述磁场的强度与所述凹陷区域的深度呈正比。
  11. 根据权利要求6或7所述的制备方法，其中，对所述薄膜施加电 场和磁场中至少之一，包括：在所述薄膜晶体管的外侧施加所述电场和所述磁场中至少之一。
  12. 根据权利要求11所述的制备方法，其中，施加的所述电场和所述磁场的强度与所述凹陷区域的深度呈正比。
  13. 根据权利要求9或11所述的制备方法，其中，所述电场和所述磁场为定向电场和定向磁场，所述定向电场和所述定向磁场的方向为从所述薄膜晶体管到所述有机层的方向，或者从所述有机层到所述薄膜晶体管的方向。
  14. 根据权利要求13所述的制备方法，其中，所述定向电场的电场强度为200-1000伏/厘米，所述定向磁场的磁场强度为200-1000高斯。
  15. 根据权利要求1～14中任一项所述的制备方法，其中，所述响应颗粒包括电场响应颗粒和磁场响应颗粒，所述电场响应颗粒包括二氧化钛颗粒；所述磁场响应颗粒包括四氧化三铁颗粒和三氧化二铁颗粒中的至少之一。
  16. 根据权利要求1～14中任一项所述的制备方法，其中，所述有机材料包括：聚甲基丙烯酸甲酯、聚酰亚胺和有机硅材料中的至少之一。
  17. 一种阵列基板包括：
    衬底基板；
    位于所述衬底基板上的膜层结构，其中，所述膜层结构包括有机材料和响应颗粒，所述响应颗粒在电场和磁场中至少之一的作用力下带动所述有机材料流动。
  18. 根据权利要求17所述的阵列基板，其中，所述响应颗粒配置为在所述电场和所述磁场中至少之一的作用力下可移动。
  19. 一种显示装置，包括权利要求17或18所述的阵列基板。
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394062B (zh) 2017-07-20 2019-02-05 京东方科技集团股份有限公司 一种有机发光二极管显示面板及其制作方法、显示装置
CN108389965B (zh) * 2018-03-01 2021-03-23 京东方科技集团股份有限公司 成膜方法、显示基板及其制作方法、显示装置
CN110600620B (zh) * 2018-06-12 2020-12-01 Tcl科技集团股份有限公司 量子点薄膜的制备方法
CN109037464B (zh) * 2018-07-26 2020-06-23 京东方科技集团股份有限公司 量子点发光层、量子点发光器件及其制备方法
CN109880440B (zh) * 2019-03-15 2022-04-26 云谷（固安）科技有限公司 墨水、喷墨打印方法、薄膜封装方法及有机薄膜
CN110416436B (zh) * 2019-08-29 2021-05-25 京东方科技集团股份有限公司 一种薄膜封装结构、显示装置及封装方法
CN113589594B (zh) * 2021-07-19 2022-07-12 Tcl华星光电技术有限公司 显示面板及其制备方法
CN115981101B (zh) * 2023-03-17 2023-06-16 湖北江城芯片中试服务有限公司 半导体结构的制造方法及半导体结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130305A (zh) * 2010-01-20 2011-07-20 株式会社日立制作所 有机发光层材料、有机发光层形成用涂布液、有机发光元件以及光源装置
US20160260922A1 (en) * 2015-03-02 2016-09-08 Samsung Display Co., Ltd. Organic light emitting diode display and method of manufacturing the same
CN106784360A (zh) * 2017-01-20 2017-05-31 京东方科技集团股份有限公司 一种有机发光二极管器件及其封装方法、封装设备
CN107394062A (zh) * 2017-07-20 2017-11-24 京东方科技集团股份有限公司 一种有机发光二极管显示面板及其制作方法、显示装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US7038832B2 (en) * 2000-10-27 2006-05-02 Seiko Epson Corporation Electrophoretic display, method for making the electrophoretic display, and electronic apparatus
JP3813829B2 (ja) * 2001-03-21 2006-08-23 株式会社東芝 電気泳動表示装置
AU2002320158A1 (en) * 2001-06-21 2003-01-08 The Trustees Of Princeton University Organic light-emitting devices with blocking and transport layers
ATE326697T1 (de) * 2001-12-21 2006-06-15 Koninkl Philips Electronics Nv Sensor und methode zur messung der flächendichte von magnetischen nanopartikeln auf einem mikroarray
US7050040B2 (en) * 2002-12-18 2006-05-23 Xerox Corporation Switching of two-particle electrophoretic display media with a combination of AC and DC electric field for contrast enhancement
JP2005037851A (ja) * 2003-06-24 2005-02-10 Seiko Epson Corp 電気泳動分散液、電気泳動表示装置、電気泳動表示装置の製造方法および電子機器
GB0326005D0 (en) * 2003-11-07 2003-12-10 Koninkl Philips Electronics Nv Waveguide for autostereoscopic display
JP4522101B2 (ja) * 2004-01-27 2010-08-11 キヤノン株式会社 電気泳動表示装置及び電気泳動表示装置の駆動方法
GB2419216A (en) * 2004-10-18 2006-04-19 Hewlett Packard Development Co Display device with greyscale capability
US7829474B2 (en) * 2005-07-29 2010-11-09 Lg. Display Co., Ltd. Method for arraying nano material and method for fabricating liquid crystal display device using the same
JP4534998B2 (ja) * 2006-02-21 2010-09-01 セイコーエプソン株式会社 帯電粒子の製造方法、帯電粒子、電気泳動分散液、電気泳動シート、電気泳動装置および電子機器
US8174491B2 (en) * 2007-06-05 2012-05-08 Fuji Xerox Co., Ltd. Image display medium and image display device
US20080311429A1 (en) * 2007-06-15 2008-12-18 Tadao Katsuragawa Magnetic film, magnetic recording/ reproducing device, and polarization conversion component
EP2239793A1 (de) 2009-04-11 2010-10-13 Bayer MaterialScience AG Elektrisch schaltbarer Polymerfilmaufbau und dessen Verwendung
JP5556497B2 (ja) * 2010-08-17 2014-07-23 富士ゼロックス株式会社 表示媒体、表示媒体の作製方法、及び表示装置
JP5994382B2 (ja) 2012-05-17 2016-09-21 スズキ株式会社 樹脂成形体およびその製造方法
CN103441138B (zh) 2013-08-13 2016-06-22 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
JP2015184573A (ja) * 2014-03-25 2015-10-22 富士ゼロックス株式会社 表示用白色粒子、表示用粒子分散液、表示媒体、及び表示装置
US20170305184A1 (en) * 2014-11-27 2017-10-26 Sicpa Holdings Sa Devices and methods for orienting platelet-shaped magnetic or magnetizable pigment particles
CN105118836B (zh) 2015-07-29 2019-04-05 京东方科技集团股份有限公司 具有导电平坦层的阵列基板及其制备方法
CN105292756B (zh) * 2015-11-06 2017-10-10 上海天马微电子有限公司 显示装置及其保护膜
CN105679806B (zh) * 2016-04-13 2018-07-17 京东方科技集团股份有限公司 柔性显示基板及其母板、制备方法、柔性显示面板及其母板
CN109192875B (zh) * 2018-09-04 2021-01-29 京东方科技集团股份有限公司 背板及制造方法、显示基板及制造方法和显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130305A (zh) * 2010-01-20 2011-07-20 株式会社日立制作所 有机发光层材料、有机发光层形成用涂布液、有机发光元件以及光源装置
US20160260922A1 (en) * 2015-03-02 2016-09-08 Samsung Display Co., Ltd. Organic light emitting diode display and method of manufacturing the same
CN106784360A (zh) * 2017-01-20 2017-05-31 京东方科技集团股份有限公司 一种有机发光二极管器件及其封装方法、封装设备
CN107394062A (zh) * 2017-07-20 2017-11-24 京东方科技集团股份有限公司 一种有机发光二极管显示面板及其制作方法、显示装置

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