WO2019003815A1 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
WO2019003815A1
WO2019003815A1 PCT/JP2018/021417 JP2018021417W WO2019003815A1 WO 2019003815 A1 WO2019003815 A1 WO 2019003815A1 JP 2018021417 W JP2018021417 W JP 2018021417W WO 2019003815 A1 WO2019003815 A1 WO 2019003815A1
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WO
WIPO (PCT)
Prior art keywords
substrate
facing portion
gap
processing apparatus
substrate processing
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PCT/JP2018/021417
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English (en)
French (fr)
Japanese (ja)
Inventor
吉田　武司
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2019003815A1 publication Critical patent/WO2019003815A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to a substrate processing apparatus for processing a substrate.
  • the processing liquid is supplied onto the wafer rotating with the holding plate, and the cleaning processing of the wafer is performed.
  • the processing solution supplied to the wafer moves radially outward by centrifugal force and scatters from the outer peripheral edge of the wafer to the periphery.
  • a rotating cup that rotates with the holding plate, and the processing liquid scattered from the wafer is received by the inner peripheral surface of the rotating cup and discharged downward.
  • the present invention is directed to a substrate processing apparatus for processing a substrate, and aims to preferably form a downward air flow between the substrate and the cup portion.
  • a substrate processing apparatus includes a substrate holding unit that has a substrate facing portion that vertically faces the lower surface of the substrate and holds the substrate in a horizontal state, and a central axis facing in the vertical direction.
  • a substrate rotation mechanism that rotates the substrate holding unit as a center, a processing liquid supply unit that supplies a processing liquid to the substrate, a cup unit that surrounds the periphery of the substrate holding unit, and a lower side of the substrate facing unit
  • the substrate facing portion may have a lower facing portion facing in the vertical direction via a lower gap. In the lower gap, a gap air flow is formed from the inside in the radial direction toward the outside in the radial direction.
  • the lower facing portion includes an outer circumferential surface extending downwardly and radially outward from an outer peripheral edge of the lower gap. According to the said substrate processing apparatus, the downward airflow between a board
  • At least a part of the outer peripheral surface of the lower facing portion is located radially outward of the outer peripheral edge of the substrate facing portion.
  • the outer peripheral edge of the lower gap is located at the same position in the radial direction as the outer peripheral edge of the substrate, or is located radially outward of the outer peripheral edge of the substrate.
  • the gas that has passed downward in the radial direction outer side of the outer peripheral surface of the lower facing portion is discharged from the cup portion to the outside, and a gas different from the gas is supplied to the lower gap from the inner side in the radial direction. Be done.
  • the apparatus further comprises a gap changing mechanism which changes the height in the vertical direction of the lower gap by relatively moving the substrate facing portion in the vertical direction with respect to the lower facing portion.
  • the lower facing portion is connected to the substrate facing portion, and is rotated together with the substrate facing portion by the substrate rotation mechanism.
  • the plasma processing apparatus further comprises a boss portion facing the lower facing portion in the vertical direction, a purge gas is supplied from a radially inner side to a gap between the lower facing portion and the boss portion, and a part of the purge gas is The lower gap is supplied radially inward.
  • the gap air flow is formed by the rotation of the substrate holding unit by the substrate rotation mechanism.
  • the substrate holding portion further includes a fin portion which is disposed radially inward of the lower gap, and which discharges gas radially outward toward the lower gap by rotation of the substrate holding portion.
  • a buffer space which is continuous with the inner peripheral edge of the lower gap and whose height in the vertical direction is larger than that of the lower gap is formed between the substrate facing portion and the lower facing portion, and the buffer space is lower. Opening towards
  • the gas injection unit further includes a gas injection unit that injects gas from the inside in the radial direction toward the lower gap to form the interstitial air flow.
  • a buffer space which is continuous with the inner peripheral edge of the lower gap at a radially outer side than the gas injection portion and whose height in the vertical direction is larger than the lower gap is the substrate facing portion and the lower facing portion. And between.
  • the buffer space is maintained at a positive pressure by controlling an injection flow rate of gas from the gas injection unit.
  • it further comprises a cylindrical flow straightening portion extending vertically between the lower facing portion and the cup portion and surrounding the periphery of the lower facing portion, and a lower end edge of the cylindrical flow straightening portion faces the lower portion.
  • the portion radially faces the outer peripheral surface of the portion, and the shortest distance between the upper end edge of the cylindrical flow straightening portion and the lower facing portion is the outer circumference of the lower end edge of the cylindrical flow straightening portion and the lower facing portion Greater than the radial distance between the faces.
  • the apparatus further includes an air flow forming portion which forms an air flow which passes downward between the substrate and the cup portion from above the substrate.
  • FIG. 1 is a view showing the configuration of a substrate processing apparatus 1 according to a first embodiment of the present invention.
  • the substrate processing apparatus 1 is a sheet-fed apparatus that processes semiconductor substrates 9 (hereinafter simply referred to as "substrates 9") one by one.
  • the substrate processing apparatus 1 supplies a processing liquid to the substrate 9 to perform processing.
  • FIG. 1 a part of a structure of the substrate processing apparatus 1 is shown in a cross section.
  • the substrate processing apparatus 1 includes a chamber 11, a substrate holding portion 31, a lower facing portion 37, a substrate rotation mechanism 33, a boss portion 34, and a cup portion 4. Inside the chamber 11, the substrate holding portion 31, the lower facing portion 37, the cup portion 4 and the like are accommodated.
  • the canopy of the chamber 11 is provided with a gas supply unit 55 that supplies a gas (for example, clean dry air) into the chamber 11.
  • the gas supply unit 55 is, for example, a fan unit that delivers gas downward.
  • the substrate holding unit 31 is a substantially disk-shaped member centered on a central axis J1 facing in the vertical direction.
  • the substrate 9 is disposed above the substrate holding unit 31.
  • the substrate 9 is held by the substrate holder 31 in a horizontal state in the chamber 11.
  • the substrate rotation mechanism 33 is disposed below the substrate holding unit 31.
  • the substrate rotation mechanism 33 rotates the substrate 9 together with the substrate holding unit 31 about the central axis J1.
  • the substrate rotation mechanism 33 is housed inside the substantially cylindrical boss portion 34 with a lid.
  • the boss portion 34 is a substrate rotation mechanism housing portion for housing the substrate rotation mechanism 33.
  • a nozzle 51 which is a processing liquid supply part for supplying the processing liquid to the substrate 9 is disposed.
  • the nozzles 51 individually supply a plurality of types of processing liquids from above the substrate 9 toward the upper main surface (hereinafter, referred to as “upper surface 91”) of the substrate 9.
  • the processing liquid supplied from the nozzle 51 may be only one type. Further, in addition to the nozzles 51, other nozzles for supplying the processing liquid to the substrate 9 may be provided.
  • the cup part 4 is a substantially annular member centering on the central axis J1.
  • the cup portion 4 is disposed to surround the substrate 9 and the substrate holding portion 31.
  • the cup 4 includes a side wall 41, a bottom 42 and an upper surface 43.
  • the side wall portion 41 has a substantially cylindrical shape centered on the central axis J1, and extends in the vertical direction substantially parallel to the central axis J1.
  • the bottom surface portion 42 has a substantially annular plate shape centering on the central axis J1.
  • the bottom portion 42 is substantially perpendicular to the central axis J1.
  • the bottom surface portion 42 extends inward in a radial direction (hereinafter, simply referred to as “radial direction”) centered on the central axis J ⁇ b> 1 from the lower end portion of the side wall portion 41.
  • the bottom portion 42 is provided with a discharge port 44.
  • the discharge port 44 is connected to a suction unit 61 disposed outside the chamber 11.
  • the upper surface portion 43 has a substantially annular plate shape centering on the central axis J1.
  • the upper surface portion 43 extends radially inward from the upper end portion of the side wall portion 41.
  • the radially inner surface of the upper surface portion 43 is an inclined surface which is directed upward as it goes radially inward from the side wall portion 41.
  • the cup unit 4 receives a processing solution or the like scattered from the rotating substrate 9 toward the periphery. Specifically, the processing liquid scattered from the substrate 9 collides with the radial inner surface of the upper surface 43 of the cup portion 4 or the radial inner surface of the side wall 41 and falls downward to the bottom surface. It leads to the part 42. The processing solution is sucked by the suction unit 61 through the discharge port 44 together with the surrounding gas, and is discharged to the outside of the cup unit 4 and the chamber 11.
  • the gas delivered downward from the gas supply unit 55 is sucked through the discharge port 44 to pass between the substrate 9 and the cup 4 from above the substrate 9.
  • the downward air flow (so-called downflow) is formed. That is, the gas supply unit 55 and the discharge port 44 are air flow forming units that form the air flow. Note that the air flow forming unit may include the suction unit 61 and the like.
  • FIG. 2 is a longitudinal cross-sectional view showing a part of the substrate holding unit 31 of the substrate processing apparatus 1 in an enlarged manner.
  • FIG. 2 shows a side view of a part of the configuration (the same applies to FIGS. 3 and 5 to 7).
  • the substrate holding unit 31 includes a substrate facing portion 35, a facing portion support portion 36, and a substrate support portion 355.
  • a lower facing portion 37 is provided around the facing portion support portion 36.
  • the lower facing portion 37 is disposed below the substrate facing portion 35.
  • substrate opposing part 35 is a substantially disk shaped site
  • the substrate facing portion 35 vertically faces the lower main surface of the substrate 9 (hereinafter, referred to as “lower surface 92”).
  • a plurality of substrate support portions 355 are disposed on the upper surface 351 of the substrate facing portion 35.
  • the plurality of substrate support portions 355 are arranged at substantially equal angular intervals in a circumferential direction (hereinafter, simply referred to as “circumferential direction”) around the central axis J1.
  • the plurality of substrate supports 355 support the outer edge of the substrate 9.
  • the substrate 9 is supported at a position spaced upward from the substrate facing portion 35.
  • the opposing part support part 36 is a substantially cylindrical part centering on the central axis J1.
  • the facing portion support portion 36 is connected to the central portion of the lower surface 352 of the substrate facing portion 35 and extends downward from the substrate facing portion 35.
  • the substrate facing portion 35 and the facing portion support portion 36 may be a member of one connection or may be separate members.
  • the facing portion support portion 36 is fixed to the rotation axis of the substrate rotation mechanism 33, and is rotated together with the substrate facing portion 35 by the substrate rotation mechanism 33.
  • the facing portion support portion 36 can also be grasped as part of the rotation axis of the substrate rotation mechanism 33.
  • the lower facing portion 37 is a substantially cylindrical portion centered on the central axis J1.
  • the lower facing portion 37 is spaced downward from the substrate facing portion 35.
  • the lower facing portion 37 is connected to the lower surface 352 of the substrate facing portion 35 via the plurality of connection portions 353.
  • the lower facing portion 37 and the substrate holding portion 31 are members in one connection.
  • the plurality of connection portions 353 have, for example, a substantially cylindrical shape, and are arranged at equal angular intervals in the circumferential direction.
  • the plurality of connection portions 353 are disposed, for example, at positions radially different from the plurality of substrate support portions 355 in the radial direction inner side than the plurality of substrate support portions 355.
  • the lower facing portion 37 includes a first portion 371 and a second portion 372.
  • the first portion 371 is a substantially cylindrical portion centered on the central axis J1.
  • the first portion 371 is located below the outer peripheral portion of the substrate facing portion 35.
  • the second portion 372 is a substantially annular plate portion centered on the central axis J1.
  • the second portion 372 extends radially inward from the inner circumferential portion of the first portion 371.
  • the height of the second portion 372 in the vertical direction is smaller than the height of the first portion 371 in the vertical direction.
  • the upper surface 374 of the first portion 371 opposes the lower surface 352 of the substrate facing portion 35 in the vertical direction via the minute gap 381.
  • the gap 381 formed between the upper surface 374 of the first portion 371 and the lower surface 352 of the substrate facing portion 35 is referred to as a “lower gap 381”.
  • the lower gap 381 is a substantially annular gap around the central axis J1.
  • the vertical height of the lower gap 381 is, for example, substantially constant over the entire length in the radial direction and the entire length in the circumferential direction.
  • the height of the lower gap 381 in the vertical direction is, for example, 1 mm or more and 5 mm or less.
  • the outer peripheral edge 385 of the lower gap 381 is located radially outward of the outer peripheral edge of the substrate 9 held by the substrate holder 31.
  • the plurality of connection portions 353 described above are located in the lower gap 381 and connect the first portion 371 of the lower facing portion 37 and the substrate facing portion 35.
  • the outer peripheral edge 385 of the lower gap 381 has, for example, the smallest distance. Radial position.
  • the upper surface 375 of the second portion 372 is located radially inward of the first portion 371 (ie, radially inward of the lower gap 381) below the upper surface 374 of the first portion 371.
  • the upper surface 375 of the second portion 372 opposes the lower surface 352 of the substrate facing portion 35 in the vertical direction via the space 382.
  • the space 382 formed between the upper surface 375 of the second portion 372 and the lower surface 352 of the substrate facing portion 35 is referred to as a “buffer space 382”.
  • the height of the buffer space 382 in the vertical direction is larger than the height of the lower gap 381 in the vertical direction.
  • the buffer space 382 is a space continuous with the inner peripheral edge 386 of the lower gap 381.
  • a substantially annular recess 383 that is recessed radially outward is provided on the inner peripheral surface of the first portion 371.
  • the recess 383 is also a part of the buffer space 382.
  • the inner peripheral edge of the second portion 372 of the lower facing portion 37 is spaced radially outward from the facing portion support portion 36.
  • the gap 384 between the inner peripheral edge of the second portion 372 and the outer peripheral surface of the facing portion support portion 36 is referred to as “lower opening 384”.
  • the lower opening 384 is a substantially annular opening centered on the central axis J1.
  • the lower opening 384 is continuous with the buffer space 382 described above. In other words, the buffer space 382 opens downward through the lower opening 384.
  • the outer circumferential surface 376 of the first portion 371 of the lower facing portion 37 (that is, the outer circumferential surface 376 of the lower facing portion 37) is a smooth surface extending downward and radially outward from the outer peripheral edge 385 of the lower gap 381.
  • the outer circumferential surface 376 is a smooth surface that is smoothly continuous with the upper surface 374 of the first portion 371 of the lower facing portion 37 and extends downward and radially outward from the upper surface 374. In the example shown in FIG.
  • the cross section of the outer peripheral surface 376 is downwardly and radially outward in a curved shape (e.g., substantially arc shape) convex outward in the radial direction from the outer peripheral edge 385 of the lower gap 381 And then extend generally vertically downward.
  • the shape of the outer circumferential surface 376 may be variously changed.
  • the cross section of the outer circumferential surface 376 may extend downward and radially outward from the outer circumferential edge 385 of the lower gap 381 substantially linearly.
  • At least a portion of the outer peripheral surface 376 of the lower facing portion 37 is located radially outward of the outer peripheral edge of the substrate facing portion 35.
  • the outer peripheral edge of the substrate facing portion 35 is located at the same position in the radial direction as the outer peripheral edge 385 of the lower gap 381, and substantially the entire outer peripheral surface 376 of the lower facing portion 37 is the substrate facing portion 35.
  • the lower surface 373 of the lower facing portion 37 is a plane substantially perpendicular to the central axis J1.
  • the lower surface of the first portion 371 and the lower surface of the second portion 372 are a part of the lower surface 373 of the lower facing portion 37.
  • the lower surface 373 of the lower opposing portion 37 opposes the upper surface 341 of the boss portion 34 in the vertical direction via the gap 342.
  • the gap 342 formed between the lower surface 373 of the lower facing portion 37 and the upper surface 341 of the boss portion 34 will be referred to as a “boss gap 342”.
  • the boss gap 342 is a substantially annular gap around the central axis J1.
  • the vertical height of the boss gap 342 is, for example, substantially constant over the entire length in the radial direction and the entire length in the circumferential direction.
  • the vertical height of the boss gap 342 is, for example, larger than the vertical height of the lower gap 381.
  • the boss gap 342 is continuous with the buffer space 382 and the lower gap 381 through the lower opening 384.
  • the facing portion support portion 36 includes a main pipe 361 and a plurality of purge pipes 362.
  • the main pipe 361 extends in the vertical direction at the central portion of the facing portion support portion 36.
  • the plurality of purge pipes 362 extend radially outward from the upper end of the main pipe 361.
  • the plurality of purge pipes 362 are disposed, for example, at substantially equal angular intervals in the circumferential direction.
  • the radially outer ends of the plurality of purge pipes 362 are located at substantially the same position as the boss gap 342 in the vertical direction. In other words, the openings of the purge pipes 362 formed on the outer peripheral surface of the facing portion support portion 36 face the boss gap 342 in the radial direction.
  • the main pipe 361 is connected to a gas supply source (not shown) disposed outside the chamber 11.
  • a gas for example, clean dry air supplied from the gas supply source to the main pipe 361 is supplied from inside in the radial direction to the boss gap 342 via the plurality of purge pipes 362 and flows outward in the radial direction.
  • the boss gap 342 is purged by the gas, and the atmosphere around the boss gap 342 (that is, the atmosphere radially outward of the boss gap 342) is prevented from flowing into the boss gap 342.
  • the gas supplied from the plurality of purge pipes 362 to the boss gap 342 is referred to as “purge gas”.
  • a portion of the purge gas is also supplied to the buffer space 382 through the lower opening 384.
  • the substrate holding unit 31 holding the substrate 9 is rotated by the substrate rotation mechanism 33.
  • gas in the vicinity of the lower surface 352 of the substrate facing portion 35 flows radially outward in the lower gap 381 and the buffer space 382 by centrifugal force.
  • ap air flow an air flow that is directed radially outward from the inner side in the radial direction is formed.
  • a gap airflow formed by the rotation of the substrate holding unit 31 by the substrate rotation mechanism 33 flows out from the outer peripheral edge 385 of the lower gap 381 at a relatively high speed.
  • the air stream flowing out of the outer peripheral edge 385 of the lower gap 381 is a jet.
  • the air flowed out of the lower gap 381 flows downward and radially outward along the outer peripheral surface 376 of the lower facing portion 37 by the Coanda effect.
  • the gas around the air flow flowing along the outer peripheral surface 376 of the lower facing portion 37 is attracted by the air flow by the Coanda effect and flows downward.
  • the gas that has passed downward in the radial direction outside of the outer peripheral surface 376 of the lower facing portion 37 is discharged to the outside of the cup portion 4 and the chamber 11 via the discharge port 44 (see FIG. 1).
  • the purge gas supplied from the plurality of purge pipes 362 is supplied to the lower gap 381 from the inside in the radial direction via the buffer space 382.
  • the gas supplied to the lower gap 381 from the inner side in the radial direction is a gas different from the above-described gas that has passed downward in the outer radial direction of the outer peripheral surface 376 of the lower facing portion 37.
  • the above-described gas that has passed downward in the radial direction outside the outer peripheral surface 376 of the lower facing portion 37 wraps around to the lower gap 381 via the boss gap 342 and the buffer space 382. There is no influx.
  • the processing liquid is supplied from the nozzle 51 to the substrate 9 which rotates with the substrate holding unit 31.
  • the processing liquid supplied onto the substrate 9 moves radially outward on the upper surface 91 of the substrate 9 by centrifugal force and scatters radially outward from the outer peripheral edge of the substrate 9.
  • the processing liquid scattered from the substrate 9 is guided downward by the air flow flowing downward in the cup portion 4, and is discharged to the outside of the cup portion 4 and the chamber 11 through the discharge port 44. Further, the processing liquid splashed from the substrate 9 and rebounded from the cup portion 4 is also guided downward by the air flow flowing downward in the cup portion 4 to the outside of the cup portion 4 and the chamber 11 through the discharge port 44. And discharged.
  • the substrate processing apparatus 1 includes the substrate holding unit 31, the lower facing portion 37, the substrate rotation mechanism 33, the processing liquid supply unit (that is, the nozzle 51), and the cup unit 4.
  • the substrate holding unit 31 holds the substrate 9 in a horizontal state.
  • the substrate holding portion 31 has a substrate facing portion 35 vertically opposed to the lower surface 92 of the substrate 9.
  • the substrate rotation mechanism 33 rotates the substrate holding unit 31 about a central axis J1 which is directed in the vertical direction.
  • the processing liquid supply unit supplies the processing liquid to the substrate 9.
  • the cup unit 4 surrounds the periphery of the substrate holding unit 31.
  • the lower facing portion 37 is disposed below the substrate facing portion 35, and faces the substrate facing portion 35 in the vertical direction via the lower gap 381.
  • a gap air flow is formed from the inner side in the radial direction toward the outer side in the radial direction.
  • the lower facing portion 37 includes an outer circumferential surface 376 extending radially outward from the outer peripheral edge of the lower gap 381.
  • the air flowed out from the lower gap 381 flows downward and radially outward along the outer peripheral surface 376 of the lower facing portion 37 due to the Coanda effect.
  • the gas around the air flow is attracted by the Coanda effect and accelerated downward.
  • the downward air flow between the substrate 9 and the cup portion 4 can be suitably formed.
  • the flow velocity of the downward air flow formed between the substrate 9 and the cup portion 4 can be increased.
  • the outer circumferential surface 376 of the lower facing portion 37 is located radially outward of the outer peripheral edge of the substrate facing portion 35. Thereby, the downward air flow between the substrate 9 and the cup portion 4 can be more suitably formed. Further, the air flow flowing along the outer peripheral surface 376 of the lower facing portion 37 can be brought close to the air flow flowing downward between the substrate 9 and the cup portion 4. Therefore, the influence of the Coanda effect exerted on the downward air flow between the substrate 9 and the cup portion 4 can be made greater by the air flow flowing along the outer peripheral surface 376 of the lower facing portion 37. As a result, the flow velocity of the downward air flow between the substrate 9 and the cup 4 can be further increased. More preferably, the entire outer circumferential surface 376 of the lower facing portion 37 is located radially outward of the outer peripheral edge of the substrate facing portion 35. Thereby, the flow velocity of the downward air flow between the substrate 9 and the cup portion 4 can be further increased.
  • the outer peripheral edge 385 of the lower gap 381 is located radially outward of the outer peripheral edge of the substrate 9. Thereby, the downward air flow between the substrate 9 and the cup portion 4 can be more suitably formed. Further, the air flow flowing along the outer peripheral surface 376 of the lower facing portion 37 can be made close to the air flow downward between the substrate 9 and the cup portion 4. As a result, the Coanda effect on the downward air flow between the substrate 9 and the cup portion 4 is increased, and the flow velocity of the air flow can be further increased.
  • the outer peripheral edge 385 of the lower gap 381 may be located at the same position as the outer peripheral edge of the substrate 9 in the radial direction. Even in this case, the downward air flow between the substrate 9 and the cup portion 4 can be more suitably formed as described above. In addition, the flow velocity of the downward air flow between the substrate 9 and the cup portion 4 can be further increased.
  • the substrate processing apparatus 1 As described above, in the substrate processing apparatus 1, a gap air flow is formed by the rotation of the substrate holding unit 31 by the substrate rotation mechanism 33. Therefore, it is not necessary to newly provide a gas supply mechanism for supplying gas to the lower gap 381 from the inner side in the radial direction. As a result, the structure of the substrate processing apparatus 1 can be simplified, and the running cost of the substrate processing apparatus 1 can also be reduced.
  • the flow velocity of the interstitial air flow can be easily changed by changing the rotation speed of the substrate holding unit 31. Specifically, by increasing the rotational speed of the substrate holding unit 31, the flow velocity of the pore air flow can be increased. In addition, by reducing the rotational speed of the substrate holding unit 31, the flow velocity of the pore air flow can be reduced.
  • the substrate 9 may have a temperature change in the radial direction of the liquid film on the substrate 9. It is preferable to reduce the flow rate of the downflow from above.
  • the rotational speed of the substrate 9 is reduced, so that the flow velocity of the interstitial air flow is also reduced, and the flow velocity of the downflow is also reduced.
  • paddle processing of the substrate 9 can be suitably performed.
  • the rotation speed of the substrate 9 is high, the rebound of the processing liquid in the cup 4 is also relatively large, but the flow velocity of the downflow is also high. As a result, it is possible to suitably guide the droplets of the processing liquid which has rebounded from the cup portion 4 downward.
  • a buffer space 382 which is continuous with the inner peripheral edge 386 of the lower gap 381 is formed between the substrate facing portion 35 and the lower facing portion 37.
  • the buffer space 382 has a larger height in the vertical direction than the lower gap 381. Also, the buffer space 382 opens downward.
  • the gas supplied to the lower gap 381 is temporarily stored in the buffer space 382 to make the flow rate of the gas supplied to the lower gap 381 from the inner side in the radial direction substantially uniform in the circumferential direction. be able to. As a result, it is possible to improve the uniformity of the flow velocity of the pore air flow in the circumferential direction.
  • the lower facing portion 37 is connected to the substrate facing portion 35, and is rotated together with the substrate facing portion 35 by the substrate rotation mechanism 33. As a result, it is not necessary to consider the contact between the substrate facing portion 35 and the lower facing portion 37 due to a shake or the like when the substrate facing portion 35 rotates, so the height of the lower gap 381 in the vertical direction can be easily reduced it can. As a result, the flow velocity of the pore air flow in the lower gap 381 can be increased.
  • the length in the vertical direction of the connecting portion 353 connecting the lower facing portion 37 and the substrate facing portion 35 is variable, and a gap changing mechanism is provided to change the length of the connecting portion 353. It is also good. For example, when the length of the connecting portion 353 is increased by the gap changing mechanism, the lower facing portion 37 moves downward, and the vertical height of the lower gap 381 is increased. When the length of the connection portion 353 is reduced by the gap changing mechanism, the lower facing portion 37 moves upward, and the height of the lower gap 381 in the vertical direction decreases. In other words, the gap changing mechanism changes the height of the lower gap 381 in the vertical direction by relatively moving the substrate facing portion 35 relative to the lower facing portion 37 in the vertical direction. Thereby, the flow velocity of the pore air flow can be easily changed.
  • the substrate processing apparatus 1 further includes a boss portion 34 facing the lower facing portion 37 in the vertical direction.
  • Purge gas is supplied to the gap between the lower facing portion 37 and the boss portion 34 (that is, the boss gap 342) from the inside in the radial direction.
  • part of the purge gas is supplied to the lower gap 381 from the inside in the radial direction.
  • the interstitial air flow can be formed by a clean gas which does not contain the treatment liquid.
  • the treatment liquid can be prevented from adhering to the lower gap 381.
  • the gas that has passed downward in the radial direction outside of the outer peripheral surface 376 of the lower facing portion 37 is discharged from the cup portion 4 to the outside, and a gas different from the gas is radially discharged to the lower gap 381. It is supplied from the inside. Thereby, it is possible to prevent the gas including the droplets of the treatment liquid and the mist from flowing into the lower gap 381. As a result, the interstitial air flow can be formed by a clean gas which does not contain the treatment liquid. In addition, the treatment liquid can be prevented from adhering to the lower gap 381.
  • the substrate processing apparatus 1 further includes the air flow forming unit (i.e., the gas supply unit 55 and the discharge port 44).
  • the air flow forming portion forms an air flow which passes between the substrate 9 and the cup portion 4 from above the substrate 9 and goes downward.
  • the volume of the air flow forming portion can be reduced. As a result, the initial cost and the running cost of the substrate processing apparatus 1 can be reduced.
  • FIG. 3 is a longitudinal sectional view showing the vicinity of another preferable substrate holding portion 31 a in the substrate processing apparatus 1 in an enlarged manner, and corresponds to FIG.
  • FIG. 4 is a bottom view of the substrate holding unit 31a.
  • the lower facing portion 37 is illustrated together by a two-dot chain line.
  • the substrate holding unit 31 a further includes a fin unit 356 in addition to the configuration of the substrate holding unit 31 illustrated in FIG. 2.
  • the fin portion 356 is disposed radially inward of the lower gap 381.
  • the fin portion 356 rotates with the substrate facing portion 35. Thereby, the gas in the vicinity of the fin portion 356 is sent radially outward toward the inner peripheral edge 386 of the lower gap 381.
  • the fin portion 356 includes a plurality of fin elements 357 arranged at substantially equal angular intervals in the circumferential direction.
  • the plurality of fin elements 357 project downward from the lower surface 352 of the substrate facing portion 35.
  • the plurality of fin elements 357 are located in the buffer space 382.
  • the plurality of fin elements 357 radially extend substantially radially about the central axis J1. Specifically, each fin element 357 is curved toward the front side in the rotation direction of the substrate holding portion 31a (that is, counterclockwise in FIG. 4) as it goes radially outward.
  • the substrate holding portion 31 a further includes the fin portion 356 disposed radially inward of the lower gap 381.
  • the fin portion 356 delivers the gas radially outward toward the lower gap 381 by the rotation of the substrate holding portion 31 a.
  • the gas can be efficiently supplied to the lower gap 381 by the rotation of the substrate holding unit 31a.
  • the shape of the fin element 357 may be variously changed.
  • the fin elements 357 may extend substantially linearly along the radial direction.
  • FIG. 5 is an enlarged vertical sectional view showing the vicinity of the substrate holding portion 31 of the substrate processing apparatus 1a according to the second embodiment of the present invention.
  • the substrate processing apparatus 1 a further includes a cylindrical rectifying unit 45 in addition to the configuration of the substrate processing apparatus 1 shown in FIGS. 1 and 2.
  • the cylindrical rectifying portion 45 is fixed to the lower facing portion 37 via, for example, a connection portion (not shown), and is rotated by the substrate rotation mechanism 33 together with the substrate holding portion 31 and the lower facing portion 37.
  • the cylindrical rectifying portion 45 may be disposed independently from the substrate holding portion 31 and the lower facing portion 37 and may be rotated by a rotation mechanism other than the substrate rotation mechanism 33 or may be fixed to the cup portion 4.
  • the other structure of the substrate processing apparatus 1 a is substantially the same as that of the substrate processing apparatus 1 shown in FIGS. 1 and 2.
  • the components of the substrate processing apparatus 1a corresponding to the components of the substrate processing apparatus 1 are denoted by the same reference numerals.
  • the cylindrical rectifying portion 45 extends in the vertical direction between the lower facing portion 37 and the cup portion 4 and surrounds the periphery of the lower facing portion 37.
  • the lower end edge of the cylindrical rectifying portion 45 radially faces the outer peripheral surface 376 of the lower facing portion 37.
  • the lower end edge of the cylindrical rectifying portion 45 is located above the lower end edge of the outer peripheral surface 376 of the lower facing portion 37.
  • the shortest distance between the upper end edge of the cylindrical flow straightening portion 45 and the lower facing portion 37 is larger than the radial distance between the lower end edge of the cylindrical flow straightening portion 45 and the outer circumferential surface 376 of the lower facing portion 37.
  • the gas flowing from above between the upper end edge of the cylindrical rectifying portion 45 and the substrate holding portion 31 is accelerated by the Coanda effect due to the air flow flowing along the outer peripheral surface 376 of the lower facing portion 37, Furthermore, acceleration is performed by the Venturi effect between the lower end edge of the cylindrical rectifying portion 45 and the lower facing portion 37.
  • the pressure in the vicinity of the lower end edge of the cylindrical flow straightening unit 45 is reduced, so that the flow velocity of the air flow going downward between the cylindrical flow straightening unit 45 and the cup 4 can be increased.
  • the replacement of the gas in the cup 4 can be realized efficiently.
  • the cylindrical rectifying unit 45 surrounds the entire circumference of the lower facing portion 37 and the substrate holding portion 31. Further, the upper end edge of the cylindrical rectifying portion 45 is located above the substrate holding portion 31 and below the substrate 9. Accordingly, the processing liquid scattered radially outward from the rotating substrate 9 passes above the cylindrical flow straightening unit 45 and is received by the cup 4. As described above, in the substrate processing apparatus 1a, since the flow velocity of the air flow moving downward between the cylindrical rectifying unit 45 and the cup portion 4 is increased, the droplets of the processing liquid that collided with the cup portion 4 Etc. can be suitably led downward.
  • the upper end edge of the cylindrical rectifying unit 45 may be located below the substrate holding unit 31. Alternatively, the upper end edge of the cylindrical rectifying portion 45 may be located above the substrate 9. In this case, the processing liquid scattered radially outward from the rotating substrate 9 is received by the cylindrical flow straightening unit 45 and guided downward.
  • FIG. 6 is an enlarged vertical sectional view showing the vicinity of the substrate holding unit 31 of the substrate processing apparatus 1b according to the third embodiment of the present invention.
  • the substrate processing apparatus 1 b further includes a gas injection unit 363 in addition to the configuration of the substrate processing apparatus 1 shown in FIGS. 1 and 2.
  • the other structure of the substrate processing apparatus 1 b is substantially the same as that of the substrate processing apparatus 1 shown in FIGS. 1 and 2.
  • the components of the substrate processing apparatus 1b corresponding to the components of the substrate processing apparatus 1 are denoted by the same reference numerals.
  • the main pipe 361 extends to the upper end portion of the facing portion support portion 36 at the central portion of the facing portion support portion 36.
  • the gas injection portion 363 is disposed at the upper end portion of the facing portion support portion 36.
  • the gas injection unit 363 includes, for example, a plurality of injection pipes 364.
  • the plurality of injection pipes 364 extend radially outward from the upper end of the main pipe 361.
  • the plurality of injection pipes 364 are disposed, for example, at substantially equal angular intervals in the circumferential direction.
  • the radially outer ends of the plurality of injection pipes 364 are located at substantially the same position as the lower gap 381 in the vertical direction. In other words, the openings of the injection pipes 364 formed on the outer peripheral surface of the facing portion support portion 36 face the lower gap 381 in the radial direction.
  • the inner peripheral edge of the second portion 372 of the lower facing portion 37 is connected to the outer circumferential surface of the facing portion support portion 36. Therefore, the buffer space 382 b formed between the substrate facing portion 35 and the second portion 372 does not open downward.
  • gas for example, clean dry air
  • the gas temporarily stored in the buffer space 382 b is supplied to the lower gap 381 from the inside in the radial direction.
  • a gap air flow that is directed radially outward is formed.
  • the air flowed out of the lower gap 381 flows downward and radially outward along the outer peripheral surface 376 of the lower facing portion 37 by the Coanda effect.
  • the substrate processing apparatus 1 b further includes the gas injection unit 363 that injects gas from the inside in the radial direction toward the lower gap 381 to form a void airflow.
  • the downward airflow between the substrate 9 and the cup portion 4 can be suitably formed as in the substrate processing apparatus 1 described above.
  • the flow velocity of the downward air flow formed between the substrate 9 and the cup portion 4 can be increased.
  • the substrate processing apparatus 1 b by adjusting the flow velocity of the gas injected from the gas injection unit 363, the flow velocity of the pore air flow can be easily adjusted regardless of the rotation speed of the substrate 9.
  • the buffer space 382b is formed between the substrate facing portion 35 and the lower facing portion 37.
  • the buffer space 382 b is continuous with the inner peripheral edge 386 of the lower gap 381 radially outward of the gas injection portion 363.
  • the buffer space 382 b is greater in height in the vertical direction than the lower gap 381.
  • the gas injected from the gas injection unit 363 is temporarily stored in the buffer space 382b before being supplied to the lower gap 381. Thereby, the flow rate of the gas supplied to the lower gap 381 from the inner side in the radial direction can be made substantially uniform in the circumferential direction. As a result, it is possible to improve the uniformity of the flow velocity of the pore air flow in the circumferential direction.
  • the buffer space 382b is maintained at a positive pressure. Thereby, it is possible to prevent or suppress that the gas including the droplet and the mist or the like of the treatment liquid enters the buffer space 382 b and the lower gap 381. As a result, the interstitial air flow can be formed by a clean gas which does not contain the treatment liquid. In addition, the treatment liquid can be prevented from adhering to the lower gap 381.
  • a cylindrical rectifying unit 45 may be provided between the substrate holding unit 31 and the cup unit 4 as in the substrate processing apparatus 1a shown in FIG. In this case, it is possible to increase the flow velocity of the air flow going downward between the cylindrical rectifying portion 45 and the cup portion 4 as described above. As a result, the replacement of the gas in the cup 4 can be realized efficiently.
  • the buffer space 382b does not necessarily have to be maintained at a positive pressure.
  • the buffer space 382b may be opened downward as in the buffer space 382 shown in FIG.
  • the buffer space 382b may not necessarily be provided.
  • the buffer space 382 may be omitted in the substrate processing apparatus 1 or 1a.
  • the gas injection unit 363 illustrated in FIG. 6 may be provided in the substrate holding unit 31 illustrated in FIGS. 1 and 2 and the substrate holding unit 31 a illustrated in FIG. 3. In this case, a gap air current is formed in the lower gap 381 by the rotation of the substrate holding unit 31 and 31 a and the injection of the gas from the gas injection unit 363.
  • the supply of the purge gas to the boss gap 342 may not necessarily be performed. The same applies to the substrate processing apparatuses 1a and 1b.
  • the air flow forming unit does not necessarily have to include the gas supply unit 55 and the discharge port 44.
  • the gas supply unit 55 may be omitted from the air flow forming unit. The same applies to the substrate processing apparatuses 1a and 1b.
  • the entire outer peripheral surface 376 of the lower facing portion 37 may be located radially inward of the outer peripheral edge of the substrate facing portion 35. Further, the outer peripheral edge 385 of the lower gap 381 may be located radially inward of the outer peripheral edge of the substrate 9. The same applies to the substrate processing apparatuses 1a and 1b.
  • the lower facing portion 37 does not necessarily have to be connected to the substrate holding portion 31, and does not have to be rotated by the substrate rotation mechanism 33.
  • the lower facing portion 37 is provided independently of the substrate holding unit 31 and synchronized with the substrate holding unit 31 or synchronized with the substrate holding unit 31 by another rotation mechanism different from the substrate rotation mechanism 33. It may be rotated without. Further, the lower facing portion 37 may be fixed without rotating.
  • the lower surface 352 of the substrate facing portion 35 of the substrate holding portion 31 vertically faces the upper surface 341 of the boss portion 34 via the lower gap 381 a. That is, in the example shown in FIG. 7, the upper end portion of the boss portion 34 is the lower facing portion 37a facing in the vertical direction via the substrate facing portion 35 and the lower gap 381a.
  • the lower facing portion 37 a is a portion independent of the substrate holding portion 31.
  • the outer peripheral surface 376 of the lower facing portion 37a extends downward and radially outward from the outer peripheral edge 385 of the lower gap 381a.
  • a gas injection unit 363 similar to that shown in FIG. 6 is provided radially inward of the lower gap 381a.
  • a gap air flow is formed outward in the radial direction in the lower gap 381a.
  • the air flowed out from the lower gap 381 a flows downward and radially outward along the outer peripheral surface 376 of the lower facing portion 37 a due to the Coanda effect.
  • the gas around the air flow flowing along the outer peripheral surface 376 of the lower facing portion 37a is attracted by the air flow by the Coanda effect and flows downward.
  • the downward airflow between the substrate 9 and the cup portion 4 can be suitably formed as in the substrate processing apparatus 1 described above.
  • the flow velocity of the downward air flow formed between the substrate 9 and the cup portion 4 can be increased.
  • the gap changing mechanism 39 that moves the substrate holding unit 31 in the vertical direction is provided below the substrate holding unit 31.
  • the gap changing mechanism 39 is housed inside the boss portion 34.
  • the height of the lower gap 381a in the vertical direction is changed by relative movement of the substrate facing portion 35 in the vertical direction with respect to the lower facing portion 37a by the gap changing mechanism 39. Thereby, the flow velocity of the pore air flow can be easily changed.
  • the above-described substrate processing apparatuses 1, 1a and 1b may be used for processing glass substrates used for display devices such as liquid crystal display devices, plasma displays, field emission displays (FEDs), etc. in addition to semiconductor substrates.
  • the substrate processing apparatus 1, 1a, 1b described above may be used to process an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, etc. .
  • Substrate processing apparatus 4 Cup portion 9 Substrate 31, 31a Substrate holding portion 33 Substrate rotating mechanism 34 Boss portion 35 Substrate facing portion 37, 37a Lower facing portion 39 Gap changing mechanism 44 Discharge port 45 Cylindrical rectifying portion 51 Nozzle 55 gas supply portion 91 upper surface 92 (substrate) lower surface 342 boss gap 356 fin portion 363 gas injection portion 376 outer peripheral surface 381 381 a lower gap 382 382 b buffer space 385 (lower gap) ) Outer peripheral edge 386 (lower gap) inner peripheral edge J1 central axis
PCT/JP2018/021417 2017-06-30 2018-06-04 基板処理装置 WO2019003815A1 (ja)

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JP2009117794A (ja) * 2007-10-17 2009-05-28 Ebara Corp 基板洗浄装置
JP2014175532A (ja) * 2013-03-11 2014-09-22 Tokyo Electron Ltd 基板処理装置及び基板処理方法
KR101485579B1 (ko) * 2013-10-02 2015-01-22 주식회사 케이씨텍 기판세정장치
JP2015216224A (ja) * 2014-05-09 2015-12-03 東京エレクトロン株式会社 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体
JP2016143790A (ja) * 2015-02-03 2016-08-08 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法

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TWI582886B (zh) * 2016-01-12 2017-05-11 弘塑科技股份有限公司 單晶圓溼式處理裝置

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JP2009117794A (ja) * 2007-10-17 2009-05-28 Ebara Corp 基板洗浄装置
JP2014175532A (ja) * 2013-03-11 2014-09-22 Tokyo Electron Ltd 基板処理装置及び基板処理方法
KR101485579B1 (ko) * 2013-10-02 2015-01-22 주식회사 케이씨텍 기판세정장치
JP2015216224A (ja) * 2014-05-09 2015-12-03 東京エレクトロン株式会社 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体
JP2016143790A (ja) * 2015-02-03 2016-08-08 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法

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