WO2018235605A1 - Dispositif à ondes élastiques, circuit frontal haute fréquence et dispositif de communication - Google Patents

Dispositif à ondes élastiques, circuit frontal haute fréquence et dispositif de communication Download PDF

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Publication number
WO2018235605A1
WO2018235605A1 PCT/JP2018/021781 JP2018021781W WO2018235605A1 WO 2018235605 A1 WO2018235605 A1 WO 2018235605A1 JP 2018021781 W JP2018021781 W JP 2018021781W WO 2018235605 A1 WO2018235605 A1 WO 2018235605A1
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layer
elastic wave
dielectric layer
wave device
acoustic
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PCT/JP2018/021781
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English (en)
Japanese (ja)
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諭卓 岸本
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株式会社村田製作所
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves

Definitions

  • the present invention relates to an elastic wave device having an IDT (InterDigital Transducer) electrode, a high frequency front end circuit, and a communication device.
  • IDT InterDigital Transducer
  • elastic wave devices having elastic wave resonators are widely used as band pass filters for mobile communication devices.
  • Patent Document 1 discloses a surface acoustic wave device in which a high sound velocity film is disposed between a glass substrate and a piezoelectric film.
  • the present invention has been made to solve the above problems, and an elastic wave device, a high frequency front end circuit, and a communication device for selectively increasing the acoustic velocity of the necessary main mode while eliminating unnecessary waves. Intended to be provided.
  • an elastic wave device includes a support substrate, an acoustic reflection layer directly or indirectly laminated on the support substrate, and an indirect on the acoustic reflection layer.
  • a sound velocity film, the acoustic reflection layer includes a first acoustic impedance layer, and a second acoustic impedance layer having an acoustic impedance higher than that of the first acoustic impedance layer
  • the high sound velocity film includes the first acoustic impedance layer and the second acoustic impedance layer. It is laminated between the piezoelectric layer and the acoustic reflection layer.
  • the high sound velocity film between the piezoelectric layer and the acoustic reflection layer it is possible to increase the sound velocity of the main mode elastic wave above the sound reflection layer.
  • the unnecessary wave can be attenuated by the acoustic reflection layer and the support substrate without being confined above the acoustic reflection layer. That is, while eliminating unnecessary waves, the acoustic wave of the main mode necessary for propagation of the high frequency signal is increased in sound velocity, and the elastic wave of the main mode, which has been increased in sound velocity, is selectively confined above the acoustic reflection layer. It becomes possible.
  • the high sound velocity film may be in contact with the piezoelectric layer.
  • the film thickness of the high sound velocity film is an IDT wavelength which is a repetition pitch of a plurality of electrode fingers constituting one comb-like electrode of a pair of comb-like electrodes of each of the one or more IDT electrodes. Or less may be 0.30 times or less.
  • the film thickness of the piezoelectric layer is equal to or less than an IDT wavelength which is a repetition pitch of a plurality of electrode fingers constituting one comb-like electrode of a pair of comb-like electrodes of each of the one or more IDT electrodes. It may be
  • the elastic wave of the main mode propagating through the piezoelectric layer may be a plate wave.
  • the elastic wave in the main mode propagating through the piezoelectric layer may be a plate wave of S 0 mode or SH 0 mode.
  • the high sound velocity film may be made of aluminum oxide.
  • the support substrate may be made of silicon or glass.
  • the support substrate may propagate a bulk wave having a sound velocity lower than that of the elastic wave of the main mode, or may damp a wave reaching the support substrate.
  • the first acoustic impedance layer may be made of silicon oxide.
  • the second acoustic impedance layer may be made of Pt, W or Ta 2 O 5 .
  • the acoustic impedance of the second acoustic impedance layer can be made higher than the acoustic impedance of the first acoustic impedance layer.
  • the semiconductor device further includes a wiring electrode formed on the piezoelectric layer and electrically connected to the one or more IDT electrodes, and the first acoustic impedance layer is a first dielectric layer made of a dielectric, The second acoustic impedance layer is disposed below the first dielectric layer, and is disposed above the second dielectric layer having an acoustic impedance higher than that of the first dielectric layer, and the first dielectric layer. And a metal layer having an acoustic impedance higher than that of the first dielectric layer, wherein the metal layer includes one of the one or more IDT electrodes when the acoustic reflection layer is viewed in plan. In the minimum area including the one IDT electrode and the wiring electrode connected to the one IDT electrode, the formation area of the metal layer is larger than the formation area of the second dielectric layer. May be small
  • the metal layer having an acoustic impedance higher than that of the first dielectric layer is formed to include the IDT electrode with the piezoelectric layer interposed between the IDT electrode and the piezoelectric layer in the plan view. It is possible to confine the high acoustic velocity main mode of the elastic wave above the metal layer while adding a suitable capacitance component to the elastic wave resonator. Further, in the above plan view, the metal layer is not arranged to include the wiring electrode, so that unnecessary capacitance components formed by the wiring electrode and the metal layer can be reduced.
  • the second dielectric layer having a larger formation area than the metal layer and higher acoustic impedance than the first dielectric layer. Since the light is reflected upward at the surface, the propagation loss of the elastic wave can be reduced. In other words, it is possible to confine the main mode of the elastic wave whose acoustic velocity has been increased to the upper side of the metal layer, eliminate unnecessary capacity components, and reduce the elastic wave propagation loss.
  • the acoustic reflection layer may further include a third dielectric layer disposed between the metal layer and the high sound velocity film and having an acoustic impedance lower than that of the metal layer.
  • the film thickness of the third dielectric layer may be different from the film thickness of the first dielectric layer.
  • the thickness ratio of the third dielectric layer and the metal layer and the first dielectric layer which are most suitable for reflecting the main mode of the elastic wave at the interface between the third dielectric layer and the metal layer It is possible to individually adjust the thickness ratio of the first dielectric layer and the second dielectric layer which are optimal for reflecting the main mode of the elastic wave at the interface with the second dielectric layer. That is, the confinement efficiency of the main mode of the elastic wave having a high sound velocity is further improved, and the unnecessary wave can be further reduced by breaking the film thickness symmetry of the acoustic reflection layer.
  • the acoustic reflection layer includes at least one of a plurality of the metal layers stacked in the perpendicular direction of the piezoelectric layer, and a plurality of the second dielectric layers stacked in the perpendicular direction, And a fourth dielectric layer having an acoustic impedance lower than that of the metal layer is disposed between the metal layers, and the second dielectric layer is disposed between the plurality of second dielectric layers. Also, a fifth dielectric layer having low acoustic impedance may be disposed.
  • the metal layer and the second dielectric layer which are high acoustic impedance layers, the fourth dielectric layer which is a low acoustic impedance layer, the first dielectric layer, and the fifth dielectric layer Because they are alternately stacked, it is possible to hierarchically reflect the main modes of elastic waves propagated downward from above at the upper surface of each high acoustic impedance layer. Therefore, the propagation loss of the elastic wave can be reduced more effectively.
  • the film thickness of the fourth dielectric layer may be different from the film thickness of the fifth dielectric layer.
  • the film thickness composition ratio of the fourth dielectric layer and the metal layer which is most suitable for reflecting the main mode of the elastic wave whose speed of sound is increased at the interface between the fourth dielectric layer and the metal layer
  • the thickness ratio of the fifth dielectric layer and the second dielectric layer which are most suitable for reflecting the main mode of the acoustic wave which has been made to high speed at the interface between the fifth dielectric layer and the second dielectric layer Can be adjusted. That is, the confinement efficiency of the main mode of the elastic wave having a high sound velocity is further improved, and the unnecessary wave can be further reduced by breaking the film thickness symmetry of the acoustic reflection layer.
  • the metal layer may be made of Pt or W.
  • a high frequency front end circuit includes the elastic wave device described in any of the above and an amplification circuit connected to the elastic wave device.
  • a communication apparatus includes the high frequency front end circuit described above and a signal processing circuit that processes a high frequency signal.
  • an elastic wave device for selectively increasing the speed of sound of a necessary main mode elastic wave while effectively eliminating unnecessary waves.
  • FIG. 1 is a cross-sectional view of the elastic wave device according to the first embodiment.
  • FIG. 2 is a diagram for explaining S modes and A modes of Lamb waves and propagation modes of SH waves.
  • FIG. 3 is a graph showing the impedance characteristic of the elastic wave device when the film thickness of the high sound velocity film is changed in the elastic wave device according to the example.
  • FIG. 4 is a graph showing the relationship between the film thickness of the high sound velocity film and the film thickness of the piezoelectric layer, and the sound velocity of the elastic wave of the main mode.
  • FIG. 5A is a plan view of an elastic wave device according to a second embodiment.
  • FIG. 5B is an example of a circuit configuration of the elastic wave device according to the second embodiment.
  • FIG. 6 is a cross-sectional view of the elastic wave device according to the second embodiment.
  • FIG. 7 is a circuit configuration diagram showing a high frequency front end circuit and a communication apparatus according to a third embodiment.
  • FIG. 1 is a cross-sectional view of elastic wave device 1 according to the first embodiment.
  • the elastic wave device 1 is, for example, a ladder-type elastic wave filter having one or more series arm resonators and one or more parallel arm resonators.
  • the series arm resonator and the parallel arm resonator are composed of elastic wave resonators.
  • the elastic wave device 1 is, for example, a band pass filter that filters and outputs an input high frequency signal in a predetermined pass band.
  • the series arm resonator and the parallel arm resonator are composed of an IDT electrode 110 consisting of a pair of comb-like electrodes, a reflective electrode provided adjacent to the IDT electrode 110 in the elastic wave propagation direction, and a substrate 50.
  • FIG. 1 shows a cross-sectional structure of an elastic wave resonator of one of a series arm resonator and a parallel arm resonator.
  • the elastic wave device 1 includes a substrate 50 having piezoelectricity at least in part, and an IDT electrode 110 disposed on the substrate 50.
  • the elastic wave apparatus 1 has on the board
  • the IDT electrode 110 is made of, for example, a metal selected from Al, Cu, Pt, Au, Ti, Ni, Cr, Ag, Mo, and Ta, or an alloy or an alloy of two or more of them. Composed of a laminate.
  • the substrate 50 has a structure in which a support substrate 51, an acoustic reflection layer 56, a high sound velocity film 53, and a piezoelectric layer 52 are stacked in this order.
  • the support substrate 51 is a substrate that supports the piezoelectric layer 52, the high sound velocity film 53, and the acoustic reflection layer 56.
  • the material forming the piezoelectric layer 52 is appropriately selected in consideration of, for example, LiNbO 3 , LiTaO 3 , ZnO, AlN, quartz, etc. in consideration of the passband width and the electromechanical coupling coefficient required for the elastic wave device 1. Ru.
  • the high sound velocity film 53 is stacked between the piezoelectric layer 52 and the acoustic reflection layer 56, and is a film that propagates a bulk wave having a sound velocity higher than that of the plate wave of the main mode propagating through the piezoelectric layer 52.
  • the ratio of the impedance of the antiresonance frequency (antiresonance point) to the impedance of the resonance frequency (resonance point) is maximum and the resonance is It is an elastic wave in combination with a point.
  • the acoustic reflection layer 56 has a structure in which a low Z layer 54C, a high Z layer 55B, a low Z layer 54B, a high Z layer 55A, and a low Z layer 54A are sequentially stacked from the support substrate 51 toward the high sound velocity film 53. .
  • Each of the low Z layers 54A, 54B, and 54C is a first acoustic impedance layer whose acoustic impedance is lower than that of the high Z layers 55A and 55B.
  • each of the high Z layers 55A and 55B is a second acoustic impedance layer having higher acoustic impedance than the low Z layers 54A, 54B and 54C.
  • the first acoustic impedance layer and the second acoustic impedance layer are alternately stacked.
  • the acoustic reflection layer 56 may preferentially confine a predetermined plate wave above the acoustic reflection layer 56 by optimizing the laminated structure parameters such as the acoustic impedance and the film thickness of each layer constituting the acoustic reflection layer 56. It is possible.
  • the high sound velocity film 53 between the piezoelectric layer 52 and the acoustic reflection layer 56, it is possible to increase the velocity of the plate wave of the main mode above the acoustic reflection layer 56.
  • the unnecessary wave can be attenuated by the support substrate 51 without being confined above the acoustic reflection layer 56. That is, the plate wave (elastic wave) of the main mode necessary for the propagation of the high frequency signal is made to have a high sound velocity, and the plate wave (elastic wave) of the main mode made high sound velocity, while effectively eliminating unnecessary waves. Can be selectively confined to the upper layer including the acoustic reflection layer 56.
  • the supporting substrate 51 is a substrate that propagates a bulk wave whose sound velocity is lower than the plate wave of the main mode propagating in the piezoelectric layer 52, or a low density substrate that damps unnecessary waves reaching the supporting substrate 51. Is preferred. Thereby, it becomes possible to scatter the unnecessary wave which has reached to the support substrate 51 efficiently.
  • the support substrate 51 As a material of the support substrate 51 which propagates the bulk wave whose sound velocity is lower than the plate wave of the said main mode, Si or glass is mentioned, for example. Moreover, as a material of the low density support substrate 51 which damps an unnecessary wave, resin is mentioned, for example. By these, it becomes possible to attenuate the unnecessary wave which has reached to the support substrate 51.
  • the high sound velocity film 53 is made of, for example, aluminum oxide (Al x O y ), and more specifically, is alumina or sapphire.
  • Al x O y aluminum oxide
  • alumina or sapphire Alternatively, as a material of the high sound velocity film 53, for example, diamond, DLC (Diamond Like Carbon), AlN, SiC or the like can be mentioned.
  • the high sound velocity film 53 is in contact with the piezoelectric layer 52. This makes it possible to increase the speed of sound of the main mode plate wave with high accuracy.
  • each of the low Z layers 54A, 54B, and 54C is made of, for example, silicon oxide. Since the low Z layers 54A, 54B and 54C are made of silicon oxide, the acoustic impedance of the low Z layers 54A, 54B and 54 can be made lower than the acoustic impedance of the high Z layers 55A and 55B, and elastic It becomes possible to improve the frequency temperature characteristic of wave device 1.
  • each of the high Z layers 55A and 55B is made of, for example, Pt, W, or Ta 2 O 5 .
  • the acoustic impedance of the high Z layers 55A and 55B is made higher than the acoustic impedance of the low Z layers 54A, 54B and 54C by the high Z layers 55A and 55B being composed of Pt, W or Ta 2 O 5 It becomes possible.
  • the film thickness of the piezoelectric layer 52 is equal to or less than the IDT wavelength ( ⁇ ) which is a repetition pitch of a plurality of electrode fingers constituting one of the pair of comb-like electrodes constituting the IDT electrode. Is preferred.
  • the elastic wave device 1 can efficiently excite a predetermined plate wave as a main mode in the elastic wave propagation direction. Moreover, since the generation of the unnecessary wave from the piezoelectric layer 52 can be reduced, the deterioration of the propagation characteristics of the plate wave can be suppressed.
  • the plate wave is a generic term for various waves excited in the piezoelectric layer 52 having a film thickness of about 1 ⁇ or less, where ⁇ is the wavelength (IDT wavelength) of the plate wave to be excited.
  • the plate wave used as a high frequency signal propagation means of the elastic wave device is an elastic wave excited by the piezoelectric layer 52 when the thickness of the piezoelectric layer 52 is reduced to about the IDT wavelength ( ⁇ ) or less.
  • the mode of the plate wave will be described using a membrane type structure in which the plate wave is confined only in the piezoelectric layer.
  • FIG. 2 is a diagram for explaining S modes and A modes of Lamb waves and propagation modes of SH waves.
  • the direction of the arrow indicates the displacement direction of the elastic wave
  • the plate waves are classified into Lamb waves (mainly components in the elastic wave propagation direction and the piezoelectric thickness direction) and SH waves (main in SH components) according to the displacement component.
  • Lamb waves are classified into symmetrical modes (S mode: (a) and (b) in FIG. 2) and antisymmetric modes (A mode: (c) and (d) in FIG. 2).
  • the one in which the displacements overlap is regarded as the symmetric mode, and the one in which the displacements are in the opposite direction is the antisymmetric mode.
  • the subscripts indicate the number of nodes in the thickness direction.
  • the A 1 mode Lamb wave is a first order antisymmetric mode Lamb waves.
  • the IDT wavelength In an elastic wave device using plate waves, in order to correspond to various frequency bands, it is necessary to change the speed of sound to adjust the frequency. In particular, if the frequency band is further increased in frequency, the IDT wavelength needs to be reduced at a constant speed of sound, but in consideration of the performance such as the shape accuracy and the power resistance of the IDT electrode, the IDT wavelength should be reduced. There is a limit to Therefore, in order to cope with the increase in frequency of the frequency band while securing the performance such as the IDT electrode shape accuracy and the power resistance, it is necessary to increase the speed of sound.
  • the characteristic as described above is for easily increasing the speed of sound of the main mode of the plate wave while suppressing unnecessary waves and efficiently confining the accelerated plate wave. I found the composition.
  • the number of layers of the first acoustic impedance layer and the number of layers of the second acoustic impedance layer are arbitrary, it is preferable that they be alternately arranged.
  • the film thickness of each of the low Z layers 54A, 54B, and 54C may be different. According to this, it is possible to individually adjust the film thickness composition ratio of the low Z layer and the high Z layer which is optimal for reflecting the main mode of the elastic wave (plate wave) at the interface between the low Z layer and the high Z layer. That is, the confinement efficiency of the main mode of the elastic wave (plate wave) which has been increased in sound velocity is further improved.
  • another layer may be interposed between the support substrate 51 and the acoustic reflection layer 56 and / or between the piezoelectric layer 52 and the IDT electrode 110.
  • the elastic wave device according to the example is configured to use the plate wave S 0 mode of the LiNbO 3 substrate as the main mode.
  • LiNbO 3 with an Euler angle 90 °, 90 °, 40 °
  • the film thickness 0.15 ⁇ ( ⁇ is the IDT wavelength).
  • Alumina is used as the high sound velocity film 53, and the film thickness is set to 0.02 ⁇ to 0.3 ⁇ .
  • the acoustic reflection layer 56 has a configuration in which the first acoustic impedance layer and the second acoustic impedance layer are alternately stacked.
  • the first acoustic impedance layer was four layers, and the second acoustic impedance layer was three layers. All four layers of the first acoustic impedance layer were made of SiO 2 , and the film thicknesses were all 0.14 ⁇ . All three layers of the second acoustic impedance layer were made of Pt, and the film thickness was all 0.09 ⁇ .
  • Si As the support substrate 51, Si was used.
  • FIG. 3 is a graph showing impedance characteristics of the elastic wave device when the film thickness of the high sound velocity film 53 is changed (0.02 ⁇ to 0.20 ⁇ ) in the elastic wave device according to the example.
  • the figure shows the frequency dependency of the impedance of the plate wave resonator when the film thickness of the high sound velocity film 53 is changed.
  • the film thickness of the piezoelectric layer 52 is preferably 1 ⁇ or less. Furthermore, from the viewpoint of suppressing the warpage of the substrate 50, it is desirable that the film thickness of each of the first acoustic impedance layer and the second acoustic impedance layer constituting the acoustic reflection layer 56 be 1 ⁇ or less. Further, from the viewpoint of attenuating the unnecessary wave, it is desirable that the supporting substrate 51 have a lower sound velocity than the sound velocity of the plate wave S 0 mode which is the main mode. In the plate wave S 0 mode, when the wavelength of the plate wave to be excited is 1 ⁇ , the main component of the displacement excited in the piezoelectric layer 52 having a film thickness of 1 ⁇ or less is a generic term doing.
  • the plate wave S 0 mode As shown in FIG. 3, by the high acoustic velocity film 53 made of alumina is disposed between the piezoelectric layer 52 and the acoustic reflecting layer 56, as the thickness of the high acoustic velocity film 53 is increased, the plate wave S 0 mode It can be seen that the speed of sound of is gradually increasing. Incidentally, the acoustic velocity V of the plate wave S 0 mode can be calculated as multiplied by the IDT wavelength ⁇ in the resonance frequency fr of the Lamb wave S 0 mode. Therefore, in the graph of FIG. 2, the resonance frequency fr increases as the film thickness of the high sound velocity film 53 increases, and the plate wave S 0 mode sound velocity increases as the film thickness of the high sound velocity film 53 increases. Show that. The impedance characteristics of the plate wave S 0 mode also has good high Q becomes, the acoustic reflection layer 56, plate wave S 0 mode it can be seen that the confined efficiently in the piezoelectric layer 52.
  • Figure 4 is a graph of acoustic wave device according to Example, showing the relationship between the acoustic velocity of the high acoustic velocity film 53 thickness and the thickness and plate wave S 0 mode of the piezoelectric layer 52.
  • the thickness of the film thickness and the piezoelectric layer 52 of high acoustic velocity film 53 the relationship between the normalized speed of sound plate wave S 0 mode is shown. Note that the normalized speed of sound plate wave S 0 mode was set to 1 the plate wave S 0 mode acoustic velocity in the case where high acoustic velocity film 53 is not disposed (when the film thickness of the high acoustic velocity film 53 is 0) If the speed of sound of the plate wave S 0 mode.
  • the normalized sound velocity tends to be higher as the film thickness of the piezoelectric layer 52 is thinner. Also, as the film thickness of the high sound velocity film 53 becomes larger, the normalized sound velocity becomes higher, and when the film thickness exceeds 0.3 ⁇ , the normalized sound velocity does not increase and sometimes turns to a slight decrease. From this result, it is desirable that the film thickness of the high sound velocity film 53 be 0.30 times or less of the IDT wavelength ⁇ . Thereby, it is possible to efficiently realize the high sound velocity of the plate wave of the main mode while suppressing the entire substrate 50 having the piezoelectricity from being thickened.
  • the acoustic wave device when using a plate wave S 0 mode LiNbO 3 as the main mode, the high acoustic velocity film 53 alumina disposed between the piezoelectric layer 52 and the acoustic reflecting layer 56 of LiNbO 3 by being, it high acoustic velocity of the Lamb wave S 0 mode at above the acoustic reflection layer 56. Further, the unnecessary wave can be attenuated by the support substrate 51 of Si without being confined above the acoustic reflection layer 56.
  • the plate wave (elastic wave) of the main mode necessary for the propagation of the high frequency signal is made to have a high sound velocity, and the plate wave (elastic wave) of the main mode made high sound velocity, while effectively eliminating unnecessary waves. Can be selectively confined to the upper layer including the acoustic reflection layer.
  • the elastic wave device 1A according to the present embodiment is different from the elastic wave device 1 according to the first embodiment in the configuration of the acoustic reflection layer disposed between the support substrate and the high sound velocity film.
  • FIG. 5A is a plan view of an elastic wave device 1A according to a second embodiment.
  • FIG. 1A is an example of a circuit configuration of an elastic wave device 1A according to a second embodiment.
  • 6 is a cross-sectional view of elastic wave device 1A according to the second embodiment. More specifically, FIG. 6 is a cut surface when the elastic wave device 1A of FIG. 5A is cut along the VI-VI line.
  • the elastic wave device 1A includes series arm resonators 11 and 12 connected between the input / output terminal 31 and the input / output terminal 32, and from the input / output terminal 31 to the input / output terminal 32. It is a ladder-type elastic wave filter having parallel arm resonators 21 and 22 connected between a connection path and a ground.
  • the series arm resonators 11 and 12 and the parallel arm resonators 21 and 22 are elastic wave resonators.
  • the elastic wave device 1 is, for example, a band pass filter that filters a high frequency signal input from the input / output terminal 31 in a predetermined pass band and outputs the high frequency signal to the input / output terminal 32.
  • FIG. 5A shows an electrode arrangement configuration for realizing the circuit configuration of the elastic wave device 1A shown in FIG. 5B. Specifically, in FIG. 5A, IDT electrodes 110, 120, 210 and 220, wiring electrodes 41, 42, 43, 44, 45 and 46 and 47, input / output terminals 31 and 32, And, the electrode layout of the ground terminals 33 and 34 is shown.
  • the series arm resonator 11 shown in FIG. 5B is composed of an IDT electrode 110 consisting of a pair of comb-like electrodes, a reflective electrode provided adjacent to the IDT electrode 110 in the elastic wave propagation direction, and a substrate 50. It is done.
  • the series arm resonator 12 is configured of an IDT electrode 120 formed of a pair of comb-like electrodes, a reflective electrode provided adjacent to the IDT electrode 120 in the elastic wave propagation direction, and a substrate 50.
  • the parallel arm resonator 21 is composed of an IDT electrode 210 composed of a pair of comb-like electrodes, a reflective electrode provided adjacent to the IDT electrode 210 in the elastic wave propagation direction, and a substrate 50.
  • the parallel arm resonator 22 is configured of an IDT electrode 220 formed of a pair of comb-like electrodes, a reflective electrode provided adjacent to the IDT electrode 220 in the elastic wave propagation direction, and a substrate 50.
  • the wiring electrode 41 is a wiring for connecting the IDT electrode 110 and the input / output terminal 31, and also serves as a bus bar electrode for connecting a plurality of electrode fingers constituting the IDT electrode 110.
  • the wiring electrode 42 is a wiring for connecting the IDT electrode 110 and the IDT electrode 120, and also connects a bus bar electrode for connecting a plurality of electrode fingers constituting the IDT electrode 110 and a plurality of electrode fingers constituting the IDT electrode 120 It also serves as a bus bar electrode.
  • the wiring electrode 43 is a wiring for connecting the IDT electrode 120 and the input / output terminal 32, and also serves as a bus bar electrode for connecting a plurality of electrode fingers constituting the IDT electrode 120.
  • the wiring electrode 44 is a wiring for connecting the IDT electrode 110 and the IDT electrode 210, and also serves as a bus bar electrode for connecting a plurality of electrode fingers constituting the IDT electrode 210.
  • the wiring electrode 45 is a wiring for connecting the IDT electrode 210 and the ground terminal 33, and also serves as a bus bar electrode for connecting a plurality of electrode fingers constituting the IDT electrode 210.
  • the wiring electrode 46 is a wiring for connecting the IDT electrode 120 and the IDT electrode 220, and also serves as a bus bar electrode for connecting a plurality of electrode fingers constituting the IDT electrode 220.
  • the wiring electrode 47 is a wiring for connecting the IDT electrode 220 and the ground terminal 34, and also serves as a bus bar electrode for connecting a plurality of electrode fingers constituting the IDT electrode 220.
  • the elastic wave device 1A includes a substrate 50, an IDT electrode 110 disposed on the substrate 50, and wiring electrodes 41 and 42 disposed on the substrate 50.
  • the wiring electrodes 41 and 42 are respectively disposed on both sides of the IDT electrode 110 in the elastic wave propagation direction, but the reflection electrodes are omitted.
  • Elastic wave device 1A according to the present embodiment differs from elastic wave device 1 according to the first embodiment only in the configuration of acoustic reflection layer 56.
  • an elastic wave device 1A according to the present embodiment will be omitted from the description of the same configuration as the elastic wave device 1 according to the first embodiment, and different points will be mainly described.
  • the substrate 50 has a structure in which a support substrate 51, an acoustic reflection layer 56, a high sound velocity film 53, and a piezoelectric layer 52 are stacked in this order.
  • the support substrate 51 is a substrate that supports the piezoelectric layer 52, the high sound velocity film 53, and the acoustic reflection layer 56, and examples of the material include Si or glass.
  • the material forming the piezoelectric layer 52 is appropriately selected in consideration of, for example, LiNbO 3 , LiTaO 3 , ZnO, AlN, quartz, etc. in consideration of the passband width and the electromechanical coupling coefficient required for the elastic wave device 1. Ru.
  • a plate wave used as a high frequency signal propagation means of an elastic wave device is characterized in that it is excited when the thickness of the piezoelectric layer through which the elastic wave propagates is reduced to about the wavelength ( ⁇ ) or less of the elastic wave.
  • ⁇ the wavelength of the elastic wave resonator
  • the configuration is shown in which the loss of the elastic wave filter is improved while the plate wave is efficiently confined by increasing the sound velocity of the plate wave. It has not been.
  • the plate wave In order to reduce the loss of the elastic wave filter, the plate wave must be efficiently confined, and in order to adjust the passband, the circuit constituting the elastic wave filter needs to have an optimum capacity component. There is. Under such circumstances, the present invention increases the speed of sound of the main mode of the plate wave and efficiently confines it while using the acoustic reflection layer to add the necessary capacity and eliminate the unnecessary capacity as follows: I found such a distinctive configuration.
  • the acoustic reflection layer 56 includes, in order from the support substrate 51 to the high sound velocity film 53, the low Z dielectric layer 57C, the high Z dielectric layer 59, the low Z dielectric layer 57B, the metal layer 58, and the low Z dielectric layer 57A. Have a stacked structure.
  • the low Z dielectric layer 57B is a first acoustic impedance layer made of a dielectric, and is disposed between the metal layer 58 and the high Z dielectric layer 59, and is formed of the metal layer 58 and the high Z dielectric layer 59. Is also the first dielectric layer with low acoustic impedance.
  • the low-Z dielectric layer 57B is made of, for example, silicon oxide, and has a film thickness of, for example, 0.14 ⁇ .
  • the acoustic impedance of the low Z dielectric layer 57B can be made lower than the acoustic impedance of the metal layer 58 and the high Z dielectric layer 59, and an elastic wave device It becomes possible to improve the frequency temperature characteristic of 1A.
  • the high-Z dielectric layer 59 is a second acoustic impedance layer formed of a dielectric, and is disposed below the low-Z dielectric layer 57B and has a higher acoustic impedance than the low-Z dielectric layer 57B. It is a layer.
  • the high-Z dielectric layer 59 is made of, for example, Ta 2 O 5 and has a film thickness of, for example, 0.09 ⁇ . By forming the high-Z dielectric layer 59 with Ta 2 O 5 , it is possible to make the acoustic impedance of the high-Z dielectric layer 59 higher than the acoustic impedance of the low-Z dielectric layer 57B.
  • the metal layer 58 is a second acoustic impedance layer disposed above the low Z dielectric layer 57B and higher in acoustic impedance than the low Z dielectric layer 57B.
  • the metal layer 58 is made of, for example, Pt or W, and the film thickness is, for example, 0.09 ⁇ . By forming the metal layer 58 of Pt or W, it is possible to make the acoustic impedance of the metal layer 58 higher than the acoustic impedance of the low Z dielectric layer 57B.
  • the low-Z dielectric layer 57A is a first acoustic impedance layer made of a dielectric, and is disposed between the metal layer 58 and the piezoelectric layer 52, and has a third dielectric layer whose acoustic impedance is lower than that of the metal layer 58. It is.
  • the low-Z dielectric layer 57A is made of, for example, silicon oxide, and the film thickness is, for example, 0.14 ⁇ . Since the low Z dielectric layer 57A is made of silicon oxide, the acoustic impedance of the low Z dielectric layer 57A can be made lower than the acoustic impedance of the metal layer 58, and the frequency temperature characteristic of the elastic wave device 1A is improved.
  • the low Z dielectric layer 57C is a first acoustic impedance layer made of a dielectric, and is disposed between the support substrate 51 and the high Z dielectric layer 59, and the support substrate 51 and the high Z dielectric layer 59 And is a dielectric layer having a lower acoustic impedance than the high Z dielectric layer 59.
  • the low-Z dielectric layer 57C is made of, for example, silicon oxide, and the film thickness is, for example, 0.14 ⁇ .
  • the acoustic impedance of the low Z dielectric layer 57C can be made lower than the acoustic impedance of the high Z dielectric layer 59, and the frequency temperature of the elastic wave device 1A It is possible to improve the characteristics.
  • metal layer 58 is disposed closer to piezoelectric layer 52. ing.
  • the metal layer 58 is formed to include the IDT electrode 110.
  • the formation area (A 58 ) of the metal layer 58 is a high Z dielectric layer Smaller than the formation area of 59.
  • the metal layer 58 is disposed close to the piezoelectric layer 52, and the metal layer 58 is The IDT electrode 110 is disposed to overlap with the IDT electrode 110 with 52 interposed therebetween.
  • the metal layer 58 has high acoustic impedance and high conductivity as compared with the high-Z dielectric layer 59, and in addition, the processing accuracy of patterning is high, so the serial arm formed of the IDT electrode 110 and the piezoelectric layer 52 It is possible to efficiently confine the high-speed plate wave main mode above the metal layer 58 while adding a capacitance component to the resonator 11 effectively.
  • the metal layer 58 is not arranged to include the wiring electrodes 41 and 42 in the plan view, unnecessary capacitance components formed by the wiring electrodes 41 and 42 and the metal layer 58 can be reduced.
  • the downward leak of the main mode of the plate wave in the region where the metal layer 58 is not formed is reflected upward at the surface of the high Z dielectric layer 59 having higher acoustic impedance than the low Z dielectric layer 57B. Therefore, the propagation loss of the main mode of the plate wave can be reduced. Since the high-Z dielectric layer 59 has a large distance to the wiring electrodes 41 and 42, the capacitance component formed by the high-Z dielectric layer 59 and the wiring electrodes 41 and 42 is small.
  • the main mode of the plate wave (elastic wave) having a high sound velocity is confined above the metal layer 58, and unnecessary capacitance components are eliminated. Elastic wave propagation loss can be reduced.
  • the metal layer 58 is formed in a region including the IDT electrode 110 and not including the wiring electrodes 41 and 42 in the plan view.
  • the high Z dielectric layer 59 as shown in FIG. 6, in the plan view, and is formed on the entire minimum area A L.
  • the metal layer 58 is formed in a region including the IDT electrode 110 and not including the wiring electrodes 41 and 42 in the plan view.
  • the length L 54 is shorter than the length L L of the minimum area A L.
  • the metal layer 58 does not overlap with the wiring electrodes 41 and 42 in the plan view, unnecessary capacitance components formed by the wiring electrodes 41 and 42 and the metal layer 58 can be eliminated.
  • the main mode of the plate wave (elastic wave) whose speed of sound is increased is confined above the metal layer 58, and unnecessary capacitance components are highly accurately obtained. It can be eliminated to reduce elastic wave propagation loss.
  • the film thickness of the low Z dielectric layer 57A and the film thickness of the low Z dielectric layer 57B are different.
  • the film thickness ratio of the low Z dielectric layer 57A and the metal layer 58 that is most suitable for reflecting the main mode of the plate wave (elastic wave) at the interface between the low Z dielectric layer 57A and the metal layer 58
  • films of the low Z dielectric layer 57B and the high Z dielectric layer 59 suitable for reflecting the plate wave (elastic wave) main mode at the interface between the low Z dielectric layer 57B and the high Z dielectric layer 59.
  • the thickness ratio can be adjusted individually. That is, the confinement efficiency of the main mode of the plate wave (elastic wave) which has been increased in sound velocity is further improved, and unnecessary wave can be further reduced by breaking the film thickness symmetry of the acoustic reflection layer.
  • the number of layers of the first acoustic impedance layer and the number of layers of the second acoustic impedance layer are arbitrary, it is preferable that they be alternately arranged.
  • the number of metal layers and high Z dielectric layers is arbitrary.
  • the acoustically reflective layer may have a plurality of metal layers 58 and a plurality of high Z dielectric layers 59.
  • the fourth dielectric layer having an acoustic impedance lower than that of the metal layer 58 is disposed between the plurality of metal layers 58
  • the high Z dielectric layer 59 is disposed between the plurality of high Z dielectric layers 59.
  • the metal layer 58 and the high-Z dielectric layer 59 which are high acoustic impedance layers, the fourth dielectric layer which is a low acoustic impedance layer, the first dielectric layer, and the fifth dielectric Since the body layers are alternately stacked, it is possible to hierarchically reflect the main mode of the elastic wave propagated downward from above on the upper surface of each high acoustic impedance layer. Therefore, the propagation loss of the elastic wave can be reduced more effectively.
  • the film thickness of the fourth dielectric layer may be different from the film thickness of the fifth dielectric layer.
  • the film thickness composition ratio of the fourth dielectric layer and the metal layer 58 which is most suitable for reflecting the main mode of the elastic wave whose speed of sound is increased at the interface between the fourth dielectric layer and the metal layer 58
  • Film thickness configuration of the fifth dielectric layer and the high-Z dielectric layer 59 suitable for reflecting the main mode of the elastic wave whose speed of sound has been increased at the interface between the fifth dielectric layer and the high-Z dielectric layer 59
  • the ratio can be adjusted individually. That is, the confinement efficiency of the main mode of the elastic wave having a high sound velocity is further improved, and the unnecessary wave can be further reduced by breaking the film thickness symmetry of the acoustic reflection layer.
  • FIG. 7 is a circuit configuration diagram showing the high frequency front end circuit 3 and the communication device 6 according to the third embodiment.
  • the first filter 1C and the second filter 1D correspond to the elastic wave device 1 according to the first embodiment and the elastic wave device 1A according to the second embodiment. Either applies.
  • an LNA is provided between the first terminal 32C and the RFIC 4 and between the second terminal 32D and the RFIC 4, respectively.
  • (Low Noise Amplifier) 60C and 60D (amplification circuit) are provided.
  • a multiport switch 105 is provided between the first filter 1C and the antenna common terminal 35 and between the second filter 1D and the antenna common terminal 35.
  • the multiport switch 105 is a switch that can be simultaneously turned ON / OFF, and when the first filter 1C is connected to the antenna common terminal 35, that is, when the first filter 1C performs signal processing,
  • the second filter 1D can also be connected to the antenna common terminal 35.
  • the plate wave (elastic wave) of the main mode necessary for the propagation of the high frequency signal of the first filter 1C and the second filter 1D is increased in sound velocity
  • the first filter 1C and the second filter 1D are used as the reception filter, but the present invention is not limited thereto, and the first filter 1C and the second filter 1D may be used as the transmission filter.
  • communication that can be transmitted by replacing the LNA 60C located between the first filter 1C and the RFIC 4 and the LNA 60D located between the second filter 1D and the RFIC 4 with PA (Power Amplifier)
  • PA Power Amplifier
  • the first filter 1C may be a transmission filter
  • the second filter 1D may be a reception filter.
  • the communication device 6 capable of transmission and reception can be configured.
  • the elastic wave device according to the first and second embodiments and the high frequency front end circuit and the communication device according to the third embodiment have been described based on the embodiments and the examples.
  • the present invention is not limited to the embodiments and examples.
  • the present invention also includes various modifications incorporating the elastic wave device, the high frequency front end circuit, and the communication device according to the present invention.
  • elastic wave device 1A in the second embodiment is not limited to the ladder type circuit configuration shown in FIG. 5B, and may be a longitudinal coupling type resonance circuit, a lateral coupling type resonance circuit, a transversal type resonance circuit, or the like. It may be configured.
  • the present invention is widely used in various electronic devices and communication devices.
  • An example of the electronic device is a sensor.
  • Examples of communication devices include duplexers including the elastic wave device of the present invention, PAs, LNAs, communication module devices including switches, mobile communication devices including the communication module devices, and healthcare communication devices.
  • Mobile communication devices include mobile phones, smart phones, car navigation systems, and the like.
  • Health care communication devices include a weight scale and a body fat scale.
  • Healthcare communication devices and mobile communication devices include an antenna, an RF module, an LSI, a display, an input unit, a power supply, and the like.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

Dispositif à ondes élastiques (1) comprenant : un substrat de support (51) ; une couche de réflexion acoustique (56) stratifiée sur le substrat de support (51) ; une couche piézoélectrique (52) stratifiée sur la couche de réflexion acoustique (56) ; une électrode IDT (110) formée sur la couche piézoélectrique (52) ; et un film à vitesse acoustique élevée (53) qui propage des ondes de volume ayant une vitesse supérieure à celle des ondes de plaque de mode principal se propageant dans la couche piézoélectrique (52). La couche de réflexion acoustique (56) a des couches Z faibles (54A, 54B, 54C) ayant une faible impédance acoustique et des couches Z élevées (55A, 55B) ayant une impédance acoustique élevée. Le film à vitesse acoustique élevée (53) est stratifié entre la couche piézoélectrique (52) et la couche de réflexion acoustique (56).
PCT/JP2018/021781 2017-06-23 2018-06-06 Dispositif à ondes élastiques, circuit frontal haute fréquence et dispositif de communication WO2018235605A1 (fr)

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JP2020123855A (ja) * 2019-01-30 2020-08-13 太陽誘電株式会社 弾性波共振器、フィルタおよびマルチプレクサ
CN111726102A (zh) * 2019-03-22 2020-09-29 株式会社村田制作所 弹性波装置
WO2020261808A1 (fr) * 2019-06-28 2020-12-30 株式会社村田製作所 Filtre à ondes élastiques
WO2021181026A1 (fr) * 2020-03-12 2021-09-16 Saint-Gobain Glass France Vitrage comprenant un element vitre comportant un dispositif de communication configure pour fonctionner par radio-frequences et par ondes acoustiques de surface
KR20210118949A (ko) * 2019-03-13 2021-10-01 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치
CN113670187A (zh) * 2021-09-06 2021-11-19 宁波韧和科技有限公司 兼具高安全性与高探测量程的电容式弹性应变传感器及其制备方法

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JP2020123855A (ja) * 2019-01-30 2020-08-13 太陽誘電株式会社 弾性波共振器、フィルタおよびマルチプレクサ
JP7290949B2 (ja) 2019-01-30 2023-06-14 太陽誘電株式会社 弾性波共振器、フィルタおよびマルチプレクサ
JP7120441B2 (ja) 2019-03-13 2022-08-17 株式会社村田製作所 弾性波装置
KR20210118949A (ko) * 2019-03-13 2021-10-01 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치
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JPWO2020184466A1 (ja) * 2019-03-13 2021-10-21 株式会社村田製作所 弾性波装置
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CN111726102A (zh) * 2019-03-22 2020-09-29 株式会社村田制作所 弹性波装置
CN111726102B (zh) * 2019-03-22 2023-12-05 株式会社村田制作所 弹性波装置
WO2020261808A1 (fr) * 2019-06-28 2020-12-30 株式会社村田製作所 Filtre à ondes élastiques
WO2021181026A1 (fr) * 2020-03-12 2021-09-16 Saint-Gobain Glass France Vitrage comprenant un element vitre comportant un dispositif de communication configure pour fonctionner par radio-frequences et par ondes acoustiques de surface
FR3108192A1 (fr) * 2020-03-12 2021-09-17 Saint-Gobain Glass France Vitrage comprenant un element vitre comportant un dispositif de communication configure pour fonctionner par radio-frequences et par ondes acoustiques de surface
CN113670187A (zh) * 2021-09-06 2021-11-19 宁波韧和科技有限公司 兼具高安全性与高探测量程的电容式弹性应变传感器及其制备方法
CN113670187B (zh) * 2021-09-06 2022-09-20 宁波韧和科技有限公司 兼具高安全性与高探测量程的电容式弹性应变传感器及其制备方法

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