WO2018232947A1 - Woled器件 - Google Patents

Woled器件 Download PDF

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Publication number
WO2018232947A1
WO2018232947A1 PCT/CN2017/098129 CN2017098129W WO2018232947A1 WO 2018232947 A1 WO2018232947 A1 WO 2018232947A1 CN 2017098129 W CN2017098129 W CN 2017098129W WO 2018232947 A1 WO2018232947 A1 WO 2018232947A1
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layer
emitting layer
host material
blue fluorescent
phosphorescent
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French (fr)
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徐超
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US15/561,984 priority Critical patent/US10069096B1/en
Publication of WO2018232947A1 publication Critical patent/WO2018232947A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H10K50/181—Electron blocking layers

Definitions

  • the present invention relates to the field of flat panel displays, and more particularly to a WOLED device.
  • the active matrix flat panel display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • organic light-emitting diode (OLED) display technology is a promising flat panel display technology, which has excellent display performance, especially self-illumination, simple structure, ultra-thin and light, fast response.
  • Wide viewing angle, low power consumption and flexible display it is known as “dream display”, and its production equipment investment is much smaller than Thin Film Transistor-Liquid Crystal Display (TFT-LCD).
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • OLED has been on the eve of mass production. With the further development of research and the emergence of new technologies, OLED display devices will have a breakthrough development.
  • WOLED white organic light emitting diode
  • CF color filter
  • the WOLED device prepared by the phosphorescent device is more efficient; and only singlet excitons of the fluorescent material can be utilized, and the efficiency of the prepared WOLED device is high. Very low ( ⁇ 25%). But so far, no suitable blue phosphorescent material has been found.
  • the WLOED device can only be designed by using a combination of blue fluorescent material and red and green phosphorescent materials, so that the triplet excitons generated by the blue fluorescent material cannot be obtained. Utilize, so the efficiency of WLOED devices is greatly limited.
  • the object of the present invention is to provide a WOLED device which can broaden the generation region of excitons and fully utilize the singlet excitons and triplet excitons generated by the blue fluorescent material, thereby effectively improving the efficiency of the WOLED device.
  • the present invention provides a WOLED device comprising a total reflection anode, a hole transport layer, an electron blocking layer, a red phosphorescent layer, and a blue layer stacked in this order from bottom to top. a color fluorescent light emitting layer, a green phosphorescent light emitting layer, a hole blocking layer, an electron transport layer, and a translucent cathode;
  • the red phosphorescent emitting layer, the blue fluorescent emitting layer and the green phosphorescent emitting layer together constitute a white light emitting layer;
  • the red phosphorescent emitting layer, the blue fluorescent emitting layer and the green phosphorescent emitting layer each comprise a host material and a guest material;
  • the host material of the red phosphorescent emitting layer is a hole transporting type host material, and the guest material of the red phosphorescent emitting layer is a red phosphorescent material;
  • the host material of the blue fluorescent light emitting layer is a bipolar transmission type host material, and the guest material of the blue fluorescent light emitting layer is a blue fluorescent material;
  • the host material of the green phosphorescent emitting layer is an electron transporting type host material, and the guest material of the green phosphorescent emitting layer is a green phosphorescent material.
  • the LUMO level of the electron blocking layer is higher than the LUMO level of the hole transporting host material by 0.3 ev - 1.5 ev.
  • the HOMO level of the hole blocking layer is 0.3 ev - 1.5 ev lower than the HOMO level of the electron transporting host material.
  • the triplet energy level of the blue fluorescent material is higher than the triplet energy level of the red phosphorescent material and the triplet energy level of the green phosphorescent material.
  • the host material of the red phosphorescent emitting layer is TCTA, or CBP.
  • the host material of the blue fluorescent light-emitting layer is o-CZOXD or PPO21.
  • the host material of the green phosphorescent emitting layer is BCP, or TPBI.
  • the WOLED device further includes a light extraction layer disposed on the translucent cathode.
  • the red phosphorescent luminescent layer, the blue fluorescent luminescent layer, and the green phosphorescent luminescent layer are respectively formed by co-evaporation of the respective host materials and guest materials into a film, or by mixing and coating the film.
  • the material of the total reflection anode is a laminated composite material of an indium tin oxide layer plus a silver layer and an indium tin oxide layer, and the material of the translucent cathode is a magnesium silver alloy material.
  • the present invention also provides a WOLED device comprising a total reflection anode, a hole transport layer, an electron blocking layer, a red phosphorescent light emitting layer, a blue fluorescent light emitting layer, a green phosphorescent emitting layer, and a hole blocking layer which are stacked in this order from bottom to top. , an electron transport layer and a translucent cathode;
  • the red phosphorescent emitting layer, the blue fluorescent emitting layer and the green phosphorescent emitting layer together constitute a white light emitting layer;
  • the red phosphorescent emitting layer, the blue fluorescent emitting layer and the green phosphorescent emitting layer each comprise a host material and a guest material;
  • the host material of the red phosphorescent emitting layer is a hole transporting type host material, and the guest material of the red phosphorescent emitting layer is a red phosphorescent material;
  • the host material of the blue fluorescent light emitting layer is a bipolar transmission type host material, and the guest material of the blue fluorescent light emitting layer is a blue fluorescent material;
  • the host material of the green phosphorescent emitting layer is an electron transporting type host material, and the guest material of the green phosphorescent emitting layer is a green phosphorescent material;
  • the LUMO level of the electron blocking layer is higher than the LUMO level of the hole transporting host material by 0.3 ev - 1.5 ev;
  • the HOMO level of the hole blocking layer is lower than the HOMO level of the electron transporting host material by 0.3 ev - 1.5 ev;
  • triplet energy level of the blue fluorescent material is higher than the triplet energy level of the red phosphorescent material and the triplet energy level of the green phosphorescent material;
  • the main material of the red phosphorescent layer is TCTA, or CBP;
  • the host material of the blue fluorescent light-emitting layer is o-CZOXD or PPO21.
  • a WOLED device provided by the present invention includes a total reflection anode, a hole transport layer, an electron blocking layer, a red phosphorescent layer, a blue fluorescent layer, and a green phosphorescent layer which are stacked in this order from bottom to top.
  • the host material of the red phosphorescent layer is a hole transport type host material
  • the host material of the blue fluorescent layer is a bipolar transport type body
  • the material of the green phosphorescent emitting layer is an electron transporting host material, and the invention can effectively improve the utilization of electrons and holes by adding an electron blocking layer and a hole blocking layer, and adopting a total reflection anode and a translucent cathode.
  • the rate by selecting a reasonable host material and energy level design, can fully utilize the singlet excitons and triplet excitons generated by the blue fluorescent material, and greatly improve the luminous efficiency of the WOLED device.
  • FIG. 1 is a schematic structural view of a WOLED device of the present invention
  • FIG. 2 is a schematic diagram of energy levels of a WOLED device of the present invention.
  • the present invention provides a WOLED device comprising a Total Reflection Anode 11 stacked in order from bottom to top, a Hole Transport Layer 12, and an Electro Blocking Layer. 13. Red Phosphorescent EML 141, Blue Fluorescent EML 142, Green Phosphorescent EML 143, Hole Blocking Layer 15, and electron transport layer (Electron Transport Layer) 16 and semi-transparent cathode (Semi transparent Cathode) 17.
  • the red phosphorescent layer 141, the blue phosphor layer 142, and the green phosphor layer 143 together constitute a white light emitting layer 14; the red phosphorescent layer 141, the blue fluorescent layer 142, and the green phosphor layer 143 are both Includes host material and guest material.
  • the main material of the red phosphorescent emitting layer 141 is a hole transporting type host material, for example: TCTA (Chinese name: 4, 4', 4"-tris(carbazol-9-yl)triphenylamine, English name: 4,4',4"-Tri(9-carbazoyl)triphenylamine), CBP (Chinese name: 4,4'-bis(9-carbazole)biphenyl; English name: 4,4'-Bis(9-carbazolyl -1,1'-biphenyl); the guest material of the red phosphorescent light-emitting layer 141 is a red phosphorescent material.
  • TCTA Choinese name: 4, 4', 4"-tris(carbazol-9-yl)triphenylamine, English name: 4,4',4"-Tri(9-carbazoyl)triphenylamine
  • CBP Chinese name: 4,4'-bis(9-carbazole)bipheny
  • the host material of the blue fluorescent light-emitting layer 142 is a bipolar transmission type host material, for example: o-CZOXD (Chinese name: 2,5-bis(2-(9H-carbazol-9-yl)phenyl)) 1,3,4-oxadiazole; English name: 2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole), PPO21 (Chinese name: 3-( Diphenylphosphoryl)-9-(4-(diphenylphosphoryl)benzene; English name: 3-(diphenylphosphoryl)-9-(4-(diphenylphosphoryl)ph); guest material of the blue fluorescent light-emitting layer 142 Blue fluorescent material;
  • the main material of the green phosphorescent luminescent layer 143 is an electron transporting host material, for example: BCP (Chinese name: 2,9-dimethyl-4,7-biphenyl-1,10-o-diazaphenanthrene; English Name: 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolin), TPBI (Chinese name: 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene English name: 1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene); the guest material of the green phosphorescent light-emitting layer 143 is a green phosphorescent material.
  • BCP Choinese name: 2,9-dimethyl-4,7-biphenyl-1,10-o-diazaphenanthrene; English Name: 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolin
  • the lowest unoccupied Molecular Orbital (LUMO) level of the electron blocking layer 13 is much higher than the LUMO energy level of the hole transporting type host material. Further, the LUMO level of the electron blocking layer 13 is higher than the LUMO level of the hole transporting type host material by 0.3 ev - 1.5 ev.
  • the highest occupied orbital (HOMO) level of the hole blocking layer 15 is much lower than the HOMO level of the electron transporting type host material, and further, The HOMO level of the hole blocking layer 15 is higher than the electron
  • the HOMO level of the transport type host material is 0.3 ev - 1.5 ev.
  • the triplet energy level of the blue fluorescent material is higher than the triplet energy level of the red phosphorescent material and the triplet energy level of the green phosphorescent material.
  • the WOLED device further includes a Light Abstraction layer 18 disposed on the translucent cathode 17.
  • the red phosphorescent luminescent layer 141, the blue fluorescent luminescent layer 142, and the green phosphorescent luminescent layer 143 are all host-doped systems, and the host-guest doping system can be formed by evaporation, spin coating, or the like, ie,
  • the red phosphorescent luminescent layer 141, the blue fluorescent luminescent layer 142, and the green phosphorescent luminescent layer 143 may be formed by co-evaporation of the respective host materials and guest materials into a film, or by mixing and coating the film.
  • the material of the total reflection anode 11 is a laminated composite material (ITO/Ag/ITO) of an indium tin oxide layer and a silver layer plus an indium tin oxide layer
  • the material of the translucent cathode 17 is a magnesium silver alloy material. (Mg: Ag).
  • the present invention provides a WOLED device comprising a total reflection anode, a hole transport layer, an electron blocking layer, a red phosphorescent emitting layer, a blue fluorescent emitting layer, and a green phosphorescent emitting layer stacked in this order from bottom to top.
  • the host material of the red phosphorescent layer is a hole transport type host material
  • the host material of the blue fluorescent layer is a bipolar transport type host material
  • the main material of the green phosphorescent emitting layer is an electron transporting type host material, and the invention can effectively improve the utilization ratio of electrons and holes by adding an electron blocking layer and a hole blocking layer, and adopting a total reflection anode and a translucent cathode.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种WOLED器件，包括由下至上依次层叠设置的全反射阳极（11）、空穴传输层（12）、电子阻挡层（13）、红色磷光发光层（141）、蓝色荧光发光层（142）、绿色磷光发光层（143）、空穴阻挡层（15）、电子传输层（16）及半透明阴极（17）；其中，红色磷光发光层（141）的主体材料为空穴传输型主体材料，蓝色荧光发光层（142）的主体材料为双极传输型主体材料，绿色磷光发光层（143）的主体材料为电子传输型主体材料，通过增加电子阻挡层（13）和空穴阻挡层（15），并采用全反射阳极（11）和半透明阴极（17），有效提高电子和空穴的利用率，又通过选用合理的主体材料和能级设计，充分的利用蓝色荧光材料所产生的单线态激子和三线态激子，大幅度提高WOLED器件的发光效率。

Description

WOLED器件 技术领域
本发明涉及平面显示器领域，尤其涉及一种WOLED器件。
背景技术
主动矩阵平面显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。其中，有机发光二极管(organic light-emitting diode，OLED)显示技术是一种极具发展前景的平板显示技术，它具有十分优异的显示性能，特别是自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，再加上其生产设备投资远小于薄膜晶体管型液晶显示屏(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜，随着研究的进一步深入，新技术的不断涌现，OLED显示器件必将有一个突破性的发展。
为实现OLED显示器的全彩化，一种方式是通过白色有机发光二极管(White Organic Light Emitting Diode，WOLED)和彩色滤光(Color Filter，CF)层叠加来实现。其中，WOLED与CF层叠加结构不需要精准的掩膜工艺，就可以实现OLED显示器的高分辨率，因此WOLED显示装置被广泛认可为下一代显示技术的焦点。
目前，磷光材料所产生的单线态激子和三线态激子均可以被利用，其所制备的WOLED器件效率较高；而荧光材料只有单线态激子能被利用，其所制备的WOLED器件效率非常低(<25％)。但到目前为止，还没有发现合适的蓝色磷光材料，只能通过选用蓝色荧光材料和红、绿色磷光材料组合搭配设计出WLOED器件，这样蓝色荧光材料产生的三线态激子就无法得以利用，因此WLOED器件的效率大大受到限制。
发明内容
本发明的目的在于提供一种WOLED器件，可以扩宽激子的产生区域，并可以充分的利用蓝色荧光材料产生的单线态激子和三线态激子，有效提高WOLED器件的效率
为实现上述目的，本发明提供一种WOLED器件，包括由下至上依次层叠设置的全反射阳极、空穴传输层、电子阻挡层、红色磷光发光层、蓝 色荧光发光层、绿色磷光发光层、空穴阻挡层、电子传输层及半透明阴极；
其中，所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层共同构成白光发光层；所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层均包括主体材料和客体材料；
所述红色磷光发光层的主体材料为空穴传输型主体材料，所述红色磷光发光层的客体材料为红色磷光材料；
所述蓝色荧光发光层的主体材料为双极传输型主体材料，所述蓝色荧光发光层的客体材料为蓝色荧光材料；
所述绿色磷光发光层的主体材料为电子传输型主体材料，所述绿色磷光发光层的客体材料为绿色磷光材料。
所述电子阻挡层的LUMO能级比所述空穴传输型主体材料的LUMO能级高0.3ev-1.5ev。
所述空穴阻挡层的HOMO能级比所述电子传输型主体材料的HOMO能级低0.3ev-1.5ev。
所述蓝色荧光材料的三线态能级高于所述红色磷光材料的三线态能级和绿色磷光材料的三线态能级。
所述红色磷光发光层的主体材料为TCTA、或CBP。
所述蓝色荧光发光层的主体材料为o-CZOXD、或PPO21。
所述绿色磷光发光层的主体材料为BCP、或TPBI。
所述的WOLED器件，还包括设于所述半透明阴极上的光提取层。
所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层分别通过各自的主体材料和客体材料共蒸镀成膜、或混合后涂布成膜制得。
所述全反射阳极的材料为氧化铟锡层加银层加氧化铟锡层的叠层复合材料，所述半透明阴极的材料为镁银合金材料。
本发明还提供一种WOLED器件，包括由下至上依次层叠设置的全反射阳极、空穴传输层、电子阻挡层、红色磷光发光层、蓝色荧光发光层、绿色磷光发光层、空穴阻挡层、电子传输层及半透明阴极；
其中，所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层共同构成白光发光层；所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层均包括主体材料和客体材料；
所述红色磷光发光层的主体材料为空穴传输型主体材料，所述红色磷光发光层的客体材料为红色磷光材料；
所述蓝色荧光发光层的主体材料为双极传输型主体材料，所述蓝色荧光发光层的客体材料为蓝色荧光材料；
所述绿色磷光发光层的主体材料为电子传输型主体材料，所述绿色磷光发光层的客体材料为绿色磷光材料；
其中，所述电子阻挡层的LUMO能级比所述空穴传输型主体材料的LUMO能级高0.3ev-1.5ev；
其中，所述空穴阻挡层的HOMO能级比所述电子传输型主体材料的HOMO能级低0.3ev-1.5ev；
其中，所述蓝色荧光材料的三线态能级高于所述红色磷光材料的三线态能级和绿色磷光材料的三线态能级；
其中，所述红色磷光发光层的主体材料为TCTA、或CBP；
其中，所述蓝色荧光发光层的主体材料为o-CZOXD、或PPO21。
本发明的有益效果：本发明提供的一种WOLED器件，包括由下至上依次层叠设置的全反射阳极、空穴传输层、电子阻挡层、红色磷光发光层、蓝色荧光发光层、绿色磷光发光层、空穴阻挡层、电子传输层及半透明阴极；其中，所述红色磷光发光层的主体材料为空穴传输型主体材料，所述蓝色荧光发光层的主体材料为双极传输型主体材料，所述绿色磷光发光层的主体材料为电子传输型主体材料，本发明通过增加电子阻挡层和空穴阻挡层，并采用全反射阳极和半透明阴极，可以有效提高电子和空穴的利用率，又通过选用合理的主体材料和能级设计，可以充分的利用蓝色荧光材料所产生的单线态激子和三线态激子,大幅度提高WOLED器件的发光效率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明WOLED器件的结构示意图；
图2为本发明WOLED器件的能级示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种WOLED器件，包括由下至上依次层叠设置的全反射阳极(Total Reflection Anode)11、空穴传输层(Hole Transport Layer)12、电子阻挡层(Electron Blocking Layer)13、红色磷光发光层(Red Phosphorescent EML)141、蓝色荧光发光层(Blue Fluorescent EML)142、绿色磷光发光层(Green Phosphorescent EML)143、空穴阻挡层(Hole Blocking Layer)15、电子传输层(Electron Transport Layer)16及半透明阴极(Semi transparent Cathode)17。
其中，所述红色磷光发光层141、蓝色荧光发光层142及绿色磷光发光层143共同构成白光发光层14；所述红色磷光发光层141、蓝色荧光发光层142及绿色磷光发光层143均包括主体材料和客体材料。
其中，所述红色磷光发光层141的主体材料为空穴传输型主体材料，例如：TCTA(中文名称：4,4',4”-三(咔唑-9-基)三苯胺，英文名称：4,4',4”-Tri(9-carbazoyl)triphenylamine)、CBP(中文名称：4,4'-二(9-咔唑)联苯；英文名称：4,4'-Bis(9-carbazolyl)-1,1'-biphenyl)；所述红色磷光发光层141的客体材料为红色磷光材料。
所述蓝色荧光发光层142的主体材料为双极传输型主体材料，例如：o-CZOXD(中文名称：2,5-二(2-(9H-咔唑-9-基)苯基)-1,3,4-噁二唑；英文名称：2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole)、PPO21(中文名称：3-(二苯磷酰基)-9-(4-(二苯磷酰基)苯；英文名称：3-(diphenylphosphoryl)-9-(4-(diphenylphosphoryl)ph)；所述蓝色荧光发光层142的客体材料为蓝色荧光材料；
所述绿色磷光发光层143的主体材料为电子传输型主体材料，例如：BCP(中文名称：2,9-二甲基-4,7-联苯-1,10-邻二氮杂菲；英文名称：2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolin)、TPBI(中文名称：1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯；英文名称：1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene)；所述绿色磷光发光层143的客体材料为绿色磷光材料。
具体地，如图2所示，所述电子阻挡层13的最低未占轨道(Lowest Unoccupied Molecular Orbital，LUMO)能级远高于所述空穴传输型主体材料的LUMO能级，进一步地，所述电子阻挡层13的LUMO能级比所述空穴传输型主体材料的LUMO能级高0.3ev-1.5ev。
具体地，如图2所示，所述空穴阻挡层15的最高已占轨道(Highest Occupied Molecular Orbital，HOMO)能级远低于所述电子传输型主体材料的HOMO能级，进一步地，所述空穴阻挡层15的HOMO能级比所述电子 传输型主体材料的HOMO能级低0.3ev-1.5ev。
具体地，如图2所示，所述蓝色荧光材料的三线态能级高于所述红色磷光材料三线态能级和绿色磷光材料三线态能级。
具体地，为了提高光的耦合输出，所述WOLED器件还包括设于所述半透明阴极17上的光提取层(Light Abstraction layer)18。
具体地，所述红色磷光发光层141、蓝色荧光发光层142及绿色磷光发光层143均为主客体掺杂体系，该主客体掺杂体系可以通过蒸镀、或旋涂等方式形成，即所述红色磷光发光层141、蓝色荧光发光层142及绿色磷光发光层143可以分别通过各自的主体材料和客体材料共蒸镀成膜、或混合后涂布成膜制得。
具体地，所述全反射阳极11的材料为氧化铟锡层加银层加氧化铟锡层的叠层复合材料(ITO/Ag/ITO)，所述半透明阴极17的材料为镁银合金材料(Mg:Ag)。
综上所述，本发明提供的一种WOLED器件，包括由下至上依次层叠设置的全反射阳极、空穴传输层、电子阻挡层、红色磷光发光层、蓝色荧光发光层、绿色磷光发光层、空穴阻挡层、电子传输层及半透明阴极；其中，所述红色磷光发光层的主体材料为空穴传输型主体材料，所述蓝色荧光发光层的主体材料为双极传输型主体材料，所述绿色磷光发光层的主体材料为电子传输型主体材料，本发明通过增加电子阻挡层和空穴阻挡层，并采用全反射阳极和半透明阴极，可以有效提高电子和空穴的利用率，又通过选用合理的主体材料和能级设计，可以充分的利用蓝色荧光材料所产生的单线态激子和三线态激子,大幅度提高WOLED器件的发光效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种WOLED器件，包括由下至上依次层叠设置的全反射阳极、空穴传输层、电子阻挡层、红色磷光发光层、蓝色荧光发光层、绿色磷光发光层、空穴阻挡层、电子传输层及半透明阴极；
    其中，所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层共同构成白光发光层；所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层均包括主体材料和客体材料；
    所述红色磷光发光层的主体材料为空穴传输型主体材料，所述红色磷光发光层的客体材料为红色磷光材料；
    所述蓝色荧光发光层的主体材料为双极传输型主体材料，所述蓝色荧光发光层的客体材料为蓝色荧光材料；
    所述绿色磷光发光层的主体材料为电子传输型主体材料，所述绿色磷光发光层的客体材料为绿色磷光材料。
  2. 如权利要求1所述的WOLED器件，其中，所述电子阻挡层的LUMO能级比所述空穴传输型主体材料的LUMO能级高0.3ev-1.5ev。
  3. 如权利要求1所述的WOLED器件，其中，所述空穴阻挡层的HOMO能级比所述电子传输型主体材料的HOMO能级低0.3ev-1.5ev。
  4. 如权利要求1所述的WOLED器件，其中，所述蓝色荧光材料的三线态能级高于所述红色磷光材料的三线态能级和绿色磷光材料的三线态能级。
  5. 如权利要求1所述的WOLED器件，其中，所述红色磷光发光层的主体材料为TCTA、或CBP。
  6. 如权利要求1所述的WOLED器件，其中，所述蓝色荧光发光层的主体材料为o-CZOXD、或PPO21。
  7. 如权利要求1所述的WOLED器件，其中，所述绿色磷光发光层的主体材料为BCP、或TPBI。
  8. 如权利要求1所述的WOLED器件，还包括设于所述半透明阴极上的光提取层。
  9. 如权利要求1所述的WOLED器件，其中，所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层分别通过各自的主体材料和客体材料共蒸镀成膜、或混合后涂布成膜制得。
  10. 如权利要求1所述的WOLED器件，其中，所述全反射阳极的材 料为氧化铟锡层加银层加氧化铟锡层的叠层复合材料，所述半透明阴极的材料为镁银合金材料。
  11. 一种WOLED器件，包括由下至上依次层叠设置的全反射阳极、空穴传输层、电子阻挡层、红色磷光发光层、蓝色荧光发光层、绿色磷光发光层、空穴阻挡层、电子传输层及半透明阴极；
    其中，所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层共同构成白光发光层；所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层均包括主体材料和客体材料；
    所述红色磷光发光层的主体材料为空穴传输型主体材料，所述红色磷光发光层的客体材料为红色磷光材料；
    所述蓝色荧光发光层的主体材料为双极传输型主体材料，所述蓝色荧光发光层的客体材料为蓝色荧光材料；
    所述绿色磷光发光层的主体材料为电子传输型主体材料，所述绿色磷光发光层的客体材料为绿色磷光材料；
    其中，所述电子阻挡层的LUMO能级比所述空穴传输型主体材料的LUMO能级高0.3ev-1.5ev；
    其中，所述空穴阻挡层的HOMO能级比所述电子传输型主体材料的HOMO能级低0.3ev-1.5ev；
    其中，所述蓝色荧光材料的三线态能级高于所述红色磷光材料的三线态能级和绿色磷光材料的三线态能级；
    其中，所述红色磷光发光层的主体材料为TCTA、或CBP；
    其中，所述蓝色荧光发光层的主体材料为o-CZOXD、或PPO21。
  12. 如权利要求11所述的WOLED器件，其中，所述绿色磷光发光层的主体材料为BCP、或TPBI。
  13. 如权利要求11所述的WOLED器件，还包括设于所述半透明阴极上的光提取层。
  14. 如权利要求11所述的WOLED器件，其中，所述红色磷光发光层、蓝色荧光发光层及绿色磷光发光层分别通过各自的主体材料和客体材料共蒸镀成膜、或混合后涂布成膜制得。
  15. 如权利要求11所述的WOLED器件，其中，所述全反射阳极的材料为氧化铟锡层加银层加氧化铟锡层的叠层复合材料，所述半透明阴极的材料为镁银合金材料。
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CN120076573A (zh) * 2025-02-28 2025-05-30 京东方科技集团股份有限公司 发光器件、显示面板和显示装置

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