WO2023000961A1 - 有机电致发光器件、显示面板及显示装置 - Google Patents

有机电致发光器件、显示面板及显示装置 Download PDF

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WO2023000961A1
WO2023000961A1 PCT/CN2022/103408 CN2022103408W WO2023000961A1 WO 2023000961 A1 WO2023000961 A1 WO 2023000961A1 CN 2022103408 W CN2022103408 W CN 2022103408W WO 2023000961 A1 WO2023000961 A1 WO 2023000961A1
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layer
electron
organic electroluminescent
blocking layer
electroluminescent device
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French (fr)
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邱丽霞
陈磊
张东旭
梁丙炎
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京东方科技集团股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers

Definitions

  • the present disclosure relates to the field of display technology, in particular to an organic electroluminescence device, a display panel and a display device.
  • OLED organic electroluminescence display
  • an embodiment of the present disclosure provides an organic electroluminescent device, comprising: an anode and a cathode disposed opposite to each other, a light-emitting layer located between the anode and the cathode, and a light-emitting layer located between the light-emitting layer and the anode An electron blocking layer between, and a hole transport layer located between the electron blocking layer and the anode; wherein,
  • the light-emitting layer includes: an exciplex formed by mixing an electron-type host material and a hole-type host material, and a guest material doped in the exciplex;
  • the electron mobility of the hole transport layer is greater than the electron mobility of the electron blocking layer, the absolute value of the difference between the HOMO value of the hole transport layer and the HOMO value of the electron blocking layer is greater than or equal to 0.08eV, and Less than or equal to 0.3eV, the triplet energy level of the guest material is smaller than the triplet energy level of the electron blocking layer, and the triplet energy level of the electron blocking layer is greater than 2.4eV.
  • the ratio of the electron mobility of the hole transport layer to the electron mobility of the electron blocking layer is between 1 ⁇ 10 4 .
  • the electron mobility of the hole transport layer is 10 -5 cm 2 /(Vs) ⁇ 10 -3 cm 2 /(Vs)
  • the electron mobility of the electron blocking layer is 10 ⁇ 7 cm 2 /(Vs) ⁇ 10 ⁇ 5 cm 2 /(Vs).
  • the absolute value of the difference between the LUMO value of the electron blocking layer and the LUMO value of the hole-type host material is greater than 0.3 eV.
  • the absolute value of the difference between the HOMO value of the hole-type host material and the HOMO value of the electron-type host material is greater than or equal to 0.25eV and Less than or equal to 0.75eV.
  • the refractive index of the electron blocking layer is greater than the refractive index of the hole transporting layer.
  • the refractive index of the hole transport layer is 1.7-1.8
  • the refractive index of the electron blocking layer is 1.8-2.0
  • the general formula of the material structure of the electron blocking layer is
  • Ar 1 -Ar 3 is C1-C5 alkyl substituted or unsubstituted C6-C30 aryl or heteroaryl, C3-C10 cycloalkyl substituted or unsubstituted C6-C30 aryl or heteroaryl ;
  • X is O, S, C, Si or NR, R is alkyl or cycloalkyl substituted or unsubstituted phenylene, biphenyl or terphenyl.
  • the material of the electron blocking layer is
  • the general structural formula of the hole-type host material is
  • R 1 and R 2 are alkyl or aryl; Ar 1 -Ar 3 are substituted or unsubstituted aryl or heteroaryl.
  • the general structural formula of the electronic host material is
  • L 1 -L 3 are substituted or unsubstituted aryl or heteroaryl.
  • the guest material is an organometallic complex, and the metal includes iridium or platinum.
  • the energy level difference between the triplet state energy level and the singlet state energy level of the exciplex is less than or equal to 0.1 eV.
  • the peak emission spectrum of the hole-type host material is smaller than the peak emission spectrum of the electron-type host material
  • the emission spectrum peak of the exciplex is greater than or equal to 500nm and less than or equal to 580nm.
  • the thickness of the light-emitting layer is 20nm-70nm, and the doping ratio of the guest material in the light-emitting layer is 2%-10%.
  • organic electroluminescent device provided by the embodiment of the present disclosure, it further includes: a hole injection layer located between the anode and the hole transport layer, and a hole injection layer located between the light-emitting layer and the cathode a hole blocking layer in between, an electron transport layer between the hole blocking layer and the cathode, and an electron injection layer between the electron transport layer and the cathode;
  • the thickness of the hole injection layer is 5nm to 20nm
  • the thickness of the hole transport layer is 80nm to 150nm
  • the thickness of the hole blocking layer is 5nm to 20nm
  • the thickness of the electron transport layer is 20nm to 50nm
  • the electron injection layer has a thickness of 1 nm to 10 nm.
  • the light-emitting layer is a red light-emitting layer or a green light-emitting layer.
  • an embodiment of the present disclosure further provides a display panel, including: a plurality of sub-pixel units, at least some of which sub-pixel units include the above-mentioned organic electroluminescent device.
  • the sub-pixel unit includes: a red sub-pixel unit, a green sub-pixel unit, and a blue sub-pixel unit; wherein,
  • the light-emitting layer of the blue organic electroluminescent device includes an electronic host material and a blue light guest material
  • the thickness of the electron blocking layer of the red sub-pixel unit, the thickness of the electron blocking layer of the green sub-pixel unit, and the thickness of the electron blocking layer of the blue sub-pixel unit decrease in order;
  • the hole blocking layers of all the sub-pixel units are the same film layer, and the electron transport layers of all the sub-pixel units are the same film layer.
  • an embodiment of the present disclosure further provides a display device, including the above-mentioned display panel.
  • FIG. 1 is a schematic structural diagram of an organic electroluminescent device provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of the energy level relationship of an organic electroluminescent device provided by an embodiment of the present disclosure
  • Fig. 3A is a luminous efficiency diagram of an organic electroluminescent device provided by an embodiment of the present disclosure
  • FIG. 3B is a color saturation diagram of an organic electroluminescent device provided by an embodiment of the present disclosure.
  • Fig. 4 is a luminous composite effect diagram of an organic electroluminescent device provided by an embodiment of the present disclosure
  • FIG. 5 is an emission spectrum diagram of an organic electroluminescent device provided by an embodiment of the present disclosure.
  • FIG. 6 is a schematic structural diagram of an organic electroluminescent device provided by an embodiment of the present disclosure.
  • FIG. 7 is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure.
  • the performance of light-emitting devices mainly depends on the material properties of each film layer and the device matching structure.
  • the material direction mainly considers material mobility, material stability, and material fluorescence quantum yield (PLQY), etc.
  • the device matching structure direction mainly considers adjacent films.
  • the main problem is currently considered to be the poor stability of the emitting layer (EML) material and the recombination region biased between the electron blocking layer (EBL)/emitting layer (EML).
  • an organic electroluminescent device as shown in Figure 1 and Figure 2, comprising: an anode 1 and a cathode 2 arranged oppositely, located between the anode 1 and the cathode 2
  • the light emitting layer 3 between them, the electron blocking layer 4 between the light emitting layer 3 and the anode 1, and the hole transport layer 5 between the electron blocking layer 4 and the anode 1.
  • the light-emitting layer 3 includes: an exciplex exciplex formed by mixing the electron-type host material n-host and the hole-type host material p-host, and the guest material dopant doped in the exciplex exciplex.
  • the electron-type host material n-host refers to a material whose electron mobility is greater than the hole mobility
  • the hole-type host material p-host refers to a material whose hole mobility is greater than the electron mobility
  • the electron mobility of the hole transport layer 5 is greater than the electron mobility of the electron blocking layer 4, and the absolute value of the difference between the HOMO value of the hole transport layer 5 and the HOMO value of the electron blocking layer 4 is greater than or equal to 0.08eV and less than or equal to 0.3 eV, the triplet energy level of the guest material dopant is smaller than the triplet energy level of the electron blocking layer 4 , and the triplet energy level of the electron blocking layer 4 is greater than 2.4 eV.
  • the hole transport layer 5 and the electron blocking layer are enlarged.
  • the energy level barrier of 4 avoids too much and too fast transmission of holes to the electron blocking layer 4, so as to solve the problem of hole accumulation between the electron blocking layer 4/light-emitting layer 3, and improve the recombination area close to the electron blocking layer 4 on one side;
  • ⁇ E 1 is greater than or equal to 0.08eV and less than or equal to 0.3eV , the triplet energy level T1 dopant of the guest material dopant is smaller than the triplet energy level T1 EBL of the electron blocking layer 4, and the triplet energy level T1
  • the combined effect of the above two aspects effectively prevents holes from accumulating at the interface of the light-emitting layer 3 and the electron blocking layer 4, and makes the holes move better to the inside of the light-emitting layer 3, thereby improving the organic electroluminescent device. efficiency and lifespan.
  • the above-mentioned organic electroluminescent device provided by the embodiments of the present disclosure can slightly increase the voltage for driving the sub-pixels to emit light, so as to match the voltage requirements of each sub-pixel in the panel, prevent the low-gray-scale panel from reddening, and achieve high efficiency, Long-lived technical effect.
  • the ratio of the electron mobility of the hole transport layer to the electron mobility of the electron blocking layer can be set at 1 Between ⁇ 10 4 , for example, the ratio is 1, 10, 100, 1000, 10000, etc.
  • the electron mobility of the hole transport layer is 10 -5 cm 2 /(Vs) ⁇ 10 -3 cm 2 /(Vs), for example, 10 -5 cm 2 /(Vs), 10 -4 cm 2 /(Vs), 10 -3 cm 2 /(Vs), etc.
  • the electron mobility of the electron blocking layer is 10 -7 cm 2 /(Vs) ⁇ 10 -5 cm 2 /(Vs), for example, 10 -7 cm 2 /(Vs), 10 -6 cm 2 /(Vs), 10 -5 cm 2 /(Vs) etc.
  • the LUMO value (EBL LUMO ) of the electron blocking layer 4 is related to the LUMO value (p -host LUMO ), the absolute value ⁇ E 2 of the difference is greater than 0.3eV, which can effectively block electrons and make holes-electrons emit light more effectively in the light-emitting layer 3 .
  • the absolute value ⁇ E 3 of the difference between the values n-host HOMO is greater than or equal to 0.25 eV and less than or equal to 0.75 eV. This is conducive to the formation of exciplexes, and the double-host material is conducive to charge balance to move the exciton recombination region to the center of the light-emitting layer. The final effect is to make the hole-electron pairs more effective in the light-emitting layer. The recombination region moves toward the center of the light-emitting layer, improving the efficiency and lifetime of the device.
  • the refractive index of the electron blocking layer 4 is greater than that of the hole transport layer 5 .
  • the refractive index of the electron blocking layer 4 is greater than that of the hole transport layer 5, which is beneficial to improve the luminous efficiency and color saturation CIEx (for example, realize deep red luminescence).
  • the refractive index of the hole transport layer 5 is 1.7-1.8
  • the refractive index of the electron blocking layer 4 is 1.8-2.0.
  • the refractive index of the electron blocking layer 4 is greater than that of the hole transport layer 5, and the electron blocking layer corresponding to the red light-emitting device can also be set to be thicker than the electron blocking layer corresponding to other color light-emitting devices, which is conducive to the enhancement of the microcavity effect , can improve the light extraction efficiency.
  • the material of the electron blocking layer may contain dibenzothiophene (DBT).
  • DBT dibenzothiophene
  • the general structural formula of the material of the electron blocking layer may be but not limited to
  • Ar 1 -Ar 3 is C1-C5 alkyl substituted or unsubstituted C6-C30 aryl or heteroaryl, C3-C10 cycloalkyl substituted or unsubstituted C6-C30 aryl or heteroaryl ;
  • X is O, S, C, Si or NR, R is alkyl or cycloalkyl substituted or unsubstituted phenylene, biphenyl or terphenyl.
  • the material of the electron blocking layer can be any organic electroluminescent device provided by the embodiments of the present disclosure.
  • the present disclosure adopts a dual-host material system that is beneficial to charge balance and moves the exciton recombination region to the center of the light-emitting layer, as shown in FIG. 4 , compared with a single group Parts of the light-emitting layer material, p-host is close to the hole transport layer, and n-host is close to the electron transport layer.
  • the hole-type host material P-host can contain an indolocarbazole group or an indenocarbazole group, which is beneficial to hole transport, and the general structural formula of the hole-type host material P-host can be:
  • R 1 and R 2 are alkyl or aryl; Ar 1 -Ar 3 are substituted or unsubstituted aryl or heteroaryl.
  • the electronic host material n-host can contain a triazine group, which is beneficial to electron transport, and the general structural formula of the electronic host material n-host can be
  • L 1 -L 3 are substituted or unsubstituted aryl or heteroaryl.
  • the exciplex formed by mixing the electron-type host material n-host and the hole-type host material p-host is relatively opposite to the hole-type host material
  • the material (p-host) and electronic host material (n-host) single component has a longer wavelength spectrum; it is beneficial to effectively transfer energy to the guest material dopant;
  • the guest material dopant can be an organometallic complex, and the metal includes iridium, for example Or platinum, such as Ir(ppy)2(acac), Ir(ppy)3, etc.
  • the energy level difference ⁇ EST between the triplet state energy level T1 exciplex of the exciplex and the singlet state energy level S1 exciplex of the exciplex is less than or equal to 0.1 eV, that is The exciplex has thermally activated delayed properties (TADF) and high luminous efficiency.
  • TADF thermally activated delayed properties
  • the emission spectrum peak (PL peak) of the exciplex exciplex is greater than or equal to 500nm and less than or equal to 580nm.
  • the emission spectrum peak value (PL peak) of the hole-type host material p-host is smaller than that of the electron-type host material n-host.
  • the emission spectrum peak (PL peak) of the exciplex is greater than or equal to 500nm and less than or equal to 580nm.
  • the host material of the red light-emitting layer is an electron-hole type single host (single) system, and the efficiency of this system can no longer meet the current mass production requirements.
  • the light emitting device provided by the present disclosure can have higher efficiency and lifetime.
  • the present disclosure is applicable to both red phosphorescent system and green phosphorescent system. That is, the light emitting layer in the present disclosure may be a red light emitting layer or a green light emitting layer.
  • the green organic electroluminescent device and the red organic electroluminescent device adopt the device structure provided by the present disclosure, the overall performance of the panel can be better improved.
  • the thickness of the light-emitting layer is 20 nm to 70 nm
  • the doping ratio of the guest material in the light-emitting layer is 2% to 10%, such as 2%, 3%. , 4%, 5%, 6%, 7%, 8%, 9%, 10%, etc.
  • the doping ratio enables the host material (including the hole-type host material p-host and the electron-type host material n-host) to effectively transfer the excitonic energy to the guest material dopant to excite the guest material to emit light; on the other hand, the host material (including the hole-type host material p-host and the electron-type host material n-host) "dilute" the guest material, which effectively improves the fluorescence quenching caused by the collision between the molecules of the guest material and the collision between the energy, and improves the luminous efficiency and device life.
  • FIG. 1 A hole blocking layer 7 between layer 3 and cathode 2 , an electron transport layer 8 between hole blocking layer 7 and cathode 2 , and an electron injection layer 9 between cathode 2 and electron transport layer 8 .
  • the thickness of the hole injection layer may be 5 nm to 20 nm
  • the thickness of the hole transport layer may be 80 nm to 150 nm
  • the thickness of the hole blocking layer may be 5nm-20nm
  • the thickness of the electron transport layer may be 20nm-50nm
  • the thickness of the electron injection layer may be 1nm-10nm.
  • the material of the hole blocking layer may be a triazine compound or BAlq or the like.
  • the hole-type host material p-host can be TCP, CBP, mCP, etc.
  • the electronic host material n-host may be a nitrogen-containing heterocyclic compound or a cyano-containing aromatic heterocyclic compound.
  • the hole transport layer can be aromatic amine compounds such as NPB and TPD.
  • the hole injection layer can be a single-component film layer such as HATCN , CuPc, MoO3, etc., or it can be a doped film layer such as an axenic or quinone compound doped with an arylamine compound, specifically F4TCNQ doped Miscellaneous NPB or TPD.
  • the electron transport layer can be a mixture of electron transport materials such as nitrogen-containing heterocyclic compounds (such as Bphen, TPBi) and lithium octahydroxyquinolate (LiQ), such as Bphen, TPBi, LiQ, BAlq, TCP, CBP,
  • nitrogen-containing heterocyclic compounds such as Bphen, TPBi
  • LiQ lithium octahydroxyquinolate
  • the structural formulas of mCP, Ir(ppy)3, Ir(ppy)2(acac), NPB, TPD, HATCN, CuPc and F4TCNQ, DCzDCN, PO-T2T are as follows:
  • the light emitting type of the organic electroluminescent device can be a top emission structure or a bottom emission structure. The difference between the two is whether the light emitting direction of the device is emitted through the substrate or away from the substrate. For the bottom emission structure, the light emitting direction of the device is emitted through the substrate; for the top emission structure, the light emitting direction of the device is away from the substrate.
  • the structure of the organic electroluminescent device can be an upright structure or an upside-down structure.
  • Layer, electron transport layer, hole blocking layer, light emitting layer, electron blocking layer, hole transport layer and anode, the inverted structure is to form anode, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer on the substrate in sequence layer, electron transport layer, electron injection layer and cathode.
  • the organic electroluminescence device provided in the embodiments of the present disclosure may be a positive bottom emission structure, a positive top emission structure, an inverted top emission structure or an inverted bottom emission structure, which is not limited thereto.
  • red organic electroluminescence device As an example. Specifically, the following methods can be used to fabricate a positive red organic electroluminescent device:
  • the pixel driving circuit includes a plurality of transistors and at least one storage capacitor, specifically shown in FIG. 6
  • a drive transistor 20 electrically connected to the anode 1 is shown.
  • a gate insulating layer 30 , an interlayer dielectric layer 40 , a flat layer 50 and a pixel defining layer 60 may also be included.
  • the electron injection layer is evaporated on the electron transport layer, and then the metal cathode is formed by evaporation on the electron injection layer.
  • a comparative example and two examples are produced by using the above-mentioned manufacturing method, wherein the comparative example is the same as the hole injection layer HIL, hole transport layer HTL, hole blocking layer HBL,
  • the electron transport layer ETL, the electron injection layer EIL and the cathode Cathode are made of the same material, and the specific electron transport layer ETL is composed of an electron transport material with a mass ratio of 5:5 and octahydroxyquinolate lithium; the difference is that the electron blocking layer EBL , Light-emitting layer EML.
  • P+N RH:RD indicates that the light-emitting layer provided by the embodiment of the present disclosure includes a hole-type host material, an electron-type host material and a guest material.
  • the electron injection layer is not shown in FIG. 7, and the sub-pixel units include: red sub-pixel unit R, green sub-pixel unit G, and blue Sub-pixel unit B; wherein,
  • the red sub-pixel unit R and the green sub-pixel unit G include the above-mentioned organic electroluminescent device, and the blue sub-pixel unit B includes a blue organic electroluminescent device;
  • the light-emitting layer of the blue organic electroluminescent device includes: an electronic host material (BH) and a blue light guest material (BD);
  • the thickness of the electron blocking layer of the red sub-pixel unit R, the thickness of the electron blocking layer of the green sub-pixel unit G, and the thickness of the electron blocking layer of the blue sub-pixel unit B decrease sequentially, and the electron blocking layer of the red sub-pixel unit R It is set to be thicker than the electron blocking layer corresponding to other color sub-pixel units, which is conducive to the enhancement of the microcavity effect and can improve the light extraction efficiency;
  • the hole injection layer 6 of all sub-pixel units is the same film layer
  • the hole transport layer 5 of all sub-pixel units is the same film layer
  • the hole blocking layer 7 of all sub-pixel units is the same film layer
  • the hole blocking layer 7 of all sub-pixel units is the same film layer.
  • the electron transport layer 8 is the same film layer, and the electron blocking layer 4 and the light emitting layer 3 of each sub-pixel unit are independent of each other.
  • an embodiment of the present disclosure further provides a display device, including the above-mentioned display panel provided by the embodiment of the present disclosure.
  • the type of the display device may be an organic light-emitting diode (Organic Light-Emitting Diode, OLED) display device, an in-plane switching (In-Plane Switching, IPS) display device, a twisted nematic (Twisted Nematic, TN) display device, a vertical Any one of display devices such as Vertical Alignment (VA) display devices, electronic paper, QLED (Quantum Dot Light Emitting Diodes, quantum dot light emitting) display devices or micro LED (micro light emitting diodes, ⁇ LED) display devices, this The disclosure is not specifically limited to this.
  • OLED Organic Light-Emitting Diode
  • IPS In-Plane Switching
  • TN twisted nematic
  • VA Vertical Alignment
  • electronic paper electronic paper
  • QLED Quantum Dot Light Emitting Diodes, quantum dot light emitting
  • micro LED micro light emitting diodes, ⁇ LED
  • the display device may be any product or component with a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and the like.
  • the other essential components of the display device should be understood by those of ordinary skill in the art, and will not be repeated here, nor should they be regarded as limitations on the present invention. Since the problem-solving principle of the display device is similar to that of the aforementioned organic electroluminescent device, the implementation of the display device can refer to the implementation of the aforementioned organic electroluminescent device, and repeated descriptions will not be repeated.
  • the above-mentioned organic electroluminescent device, display panel and display device provided by the embodiments of the present disclosure on the one hand, by setting the electron mobility of the hole transport layer higher than the electron mobility of the electron blocking layer, the hole transport layer and the electron blocking layer are increased.
  • the energy level barrier of the layer avoids too much and too fast transmission of holes to the electron blocking layer, so as to solve the problem of hole accumulation between the electron blocking layer/light-emitting layer and improve the stability of the recombination region near the electron blocking layer.
  • the triplet energy level of the guest material is smaller than that of the electron blocking layer
  • the triplet energy level, and the triplet energy level of the electron blocking layer is greater than 2.4eV.
  • This energy level relationship not only helps to control the injection rate of holes from the hole transport layer to the electron blocking layer, but also facilitates the formation of holes in the hole-type Transport on the host material, so that holes are effectively confined in the light-emitting layer to recombine with electrons to form exciton light emission, and the exciton recombination region moves to the center of the light-emitting layer.
  • the combined effect of the above two aspects effectively prevents holes from accumulating at the interface between the light-emitting layer and the electron blocking layer, and makes the holes move to the inside of the light-emitting layer better, thereby improving the efficiency and efficiency of the organic electroluminescent device. life.

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Abstract

本公开实施例公开了一种有机电致发光器件、显示面板及显示装置，有机电致发光器件包括：相对设置的阳极和阴极，位于阳极和阴极之间的发光层，位于发光层与阳极之间的电子阻挡层，以及位于电子阻挡层与阳极之间的空穴传输层；其中，发光层包括：由电子型主体材料和空穴型主体材料混合形成的激基复合物，以及在激基复合物中掺杂的客体材料；空穴传输层的电子迁移率大于电子阻挡层的电子迁移率，空穴传输层的HOMO值与电子阻挡层的HOMO值之差的绝对值大于或等于0.08eV且小于或等于0.3eV，客体材料的三线态能级小于电子阻挡层的三线态能级，且电子阻挡层的三线态能级大于2.4eV。

Description

有机电致发光器件、显示面板及显示装置
相关申请的交叉引用
本申请要求在2021年7月21日提交中国专利局、申请号为202110822938.1、申请名称为“有机电致发光器件、显示面板及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，特别涉及一种有机电致发光器件、显示面板及显示装置。
背景技术
近年来，有机电致发光显示器(OLED)作为一种新型的平板显示逐渐受到更多的关注。由于其具有主动发光、发光亮度高、分辨率高、宽视角、响应速度快、色彩饱和、轻薄、低能耗以及可柔性化等特点，被誉为梦幻显示，成为目前市场上炙手可热的主流显示产品。
发明内容
一方面，本公开实施例提供了一种有机电致发光器件，包括：相对设置的阳极和阴极，位于所述阳极和所述阴极之间的发光层，位于所述发光层与所述阳极之间的电子阻挡层，以及位于所述电子阻挡层与所述阳极之间的空穴传输层；其中，
所述发光层包括：由电子型主体材料和空穴型主体材料混合形成的激基复合物，以及在所述激基复合物中掺杂的客体材料；
所述空穴传输层的电子迁移率大于所述电子阻挡层的电子迁移率，所述空穴传输层的HOMO值与所述电子阻挡层的HOMO值之差的绝对值大于或 等于0.08eV且小于或等于0.3eV，所述客体材料的三线态能级小于所述电子阻挡层的三线态能级，且所述电子阻挡层的三线态能级大于2.4eV。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴传输层的电子迁移率和所述电子阻挡层的电子迁移率的比值在1～10 4之间。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴传输层的电子迁移率为10 -5cm 2/(V.s)～10 -3cm 2/(V.s)，所述电子阻挡层的电子迁移率为10 -7cm 2/(V.s)～10 -5cm 2/(V.s)。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述电子阻挡层的LUMO值与所述空穴型主体材料的LUMO值之差的绝对值大于0.3eV。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴型主体材料的HOMO值与所述电子型主体材料的HOMO值之差的绝对值大于或等于0.25eV且小于或等于0.75eV。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述电子阻挡层的折射率大于所述空穴传输层的折射率。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴传输层的折射率为1.7～1.8，所述电子阻挡层的折射率为1.8～2.0。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述电子阻挡层的材料结构通式为
Figure PCTCN2022103408-appb-000001
Figure PCTCN2022103408-appb-000002
其中，Ar 1-Ar 3为C1-C5烷基取代或未取代的C6-C30的芳基或杂芳基，C3-C10环烷基取代或未取代的C6-C30的芳基或杂芳基；X为O、S、C、Si或N-R，R为烷基或环烷基取代或未取代的亚苯基、联苯或三联苯。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述电子阻挡层的材料为
Figure PCTCN2022103408-appb-000003
Figure PCTCN2022103408-appb-000004
Figure PCTCN2022103408-appb-000005
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴型主体材料的结构通式为
Figure PCTCN2022103408-appb-000006
其中，R 1、R 2为烷基，芳基；Ar 1-Ar 3为取代或未取代的芳基或杂芳基。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述电子型主体材料的结构通式为
Figure PCTCN2022103408-appb-000007
其中，L 1-L 3为取代或未取代的芳基或杂芳基。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述客体材料为有机金属配合物，所述金属包括铱或铂。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述激基复合物的三线态能级与单线态能级的能级差小于或等于0.1eV。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴型主体材料的发射光谱峰值小于所述电子型主体材料的发射光谱峰值；
所述激基复合物的发射光谱峰值大于或等于500nm且小于或等于580nm。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述发光层的厚度为20nm～70nm，所述客体材料在所述发光层中掺杂比例为2％～10％。
可选地，在本公开实施例提供的上述有机电致发光器件中，还包括：位于所述阳极和所述空穴传输层之间的空穴注入层，位于所述发光层和所述阴极之间的空穴阻挡层，位于所述空穴阻挡层和所述阴极之间的电子传输层，以及位于所述电子传输层和所述阴极之间的电子注入层；
所述空穴注入层的厚度为5nm～20nm，所述空穴传输层的厚度为80nm～150nm，所述空穴阻挡层的厚度为5nm～20nm，所述电子传输层的厚度为20nm～50nm，所述电子注入层厚度为1nm～10nm。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述发光层为红色发光层或绿色发光层。
另一方面，本公开实施例还提供了一种显示面板，包括：多个子像素单元，至少部分所述子像素单元包括上述有机电致发光器件。
可选地，在本公开实施例提供的上述显示面板中，所述子像素单元包括：红色子像素单元、绿色子像素单元和蓝色子像素单元；其中，
所述红色子像素单元和所述绿色子像素单元包括上述有机电致发光器件，所述蓝色子像素单元包括蓝色有机电致发光器件；
所述蓝色有机电致发光器件的发光层包括电子型主体材料和蓝光客体材料；
所述红色子像素单元的电子阻挡层的厚度、所述绿色子像素单元的电子阻挡层的厚度、所述蓝色子像素单元的电子阻挡层的厚度依次减小；
全部所述子像素单元的空穴阻挡层为同一膜层，且全部所述子像素单元的电子传输层为同一膜层。
另一方面，本公开实施例还提供了一种显示装置，包括上述显示面板。
附图说明
图1为本公开实施例提供的有机电致发光器件的结构示意图；
图2为本公开实施例提供的有机电致发光器件的能级关系示意图；
图3A为本公开实施例提供的有机电致发光器件的发光效率图；
图3B为本公开实施例提供的有机电致发光器件的色彩饱和度图；
图4为本公开实施例提供的有机电致发光器件的发光复合效果图；
图5为本公开实施例提供的有机电致发光器件的发射光谱图；
图6为本公开实施例提供的有机电致发光器件的结构示意图；
图7为本公开实施例提供的显示面板的结构示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。并且在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互组合。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“内”、“外”、“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
需要注意的是，附图中各图形的尺寸和形状不反映真实比例，目的只是示意说明本公开内容。并且自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。
随着OLED产品不断的发展，对于OLED产品的效率和寿命等性能的要 求越来越高。发光器件的性能主要取决于各膜层的材料本身性能和器件搭配结构，材料方向主要考虑材料迁移率、材料稳定性、材料荧光量子产率(PLQY)等，器件搭配结构方向主要考虑相邻膜层的能级匹配、激子分布情况、电子和空穴注入和堆积情况等。对于器件效率和寿命较低的问题，目前认为主要的问题是发光层(EML)材料稳定性较差和复合区域偏向电子阻挡层(EBL)/发光层(EML)之间。
针对相关技术中存在的上述问题，本公开实施例提供了一种有机电致发光器件，如图1和图2所示，包括：相对设置的阳极1和阴极2，位于阳极1和阴极2之间的发光层3，位于发光层3与阳极1之间的电子阻挡层4，以及位于电子阻挡层4与阳极1之间的空穴传输层5。
其中，发光层3包括：由电子型主体材料n-host和空穴型主体材料p-host混合形成的激基复合物exciplex，以及在激基复合物exciplex中掺杂的客体材料dopant。
需要说明的是，电子型主体材料n-host指的是电子迁移率大于空穴迁移率的材料；空穴型主体材料p-host指的是空穴迁移率大于电子迁移率的材料。
空穴传输层5的电子迁移率大于电子阻挡层4的电子迁移率，空穴传输层5的HOMO值与电子阻挡层4的HOMO值之差的绝对值大于或等于0.08eV且小于或等于0.3eV，客体材料dopant的三线态能级小于电子阻挡层4的三线态能级，且电子阻挡层4的三线态能级大于2.4eV。
在本公开实施例提供的上述有机电致发光器件中，一方面通过设置空穴传输层5的电子迁移率大于电子阻挡层4的电子迁移率，增大了空穴传输层5和电子阻挡层4的能级势垒，避免了空穴过多、过快地传输至电子阻挡层4，以解决空穴在电子阻挡层4/发光层3之间累积的问题，改善复合区域靠近电子阻挡层4一侧的情况；另一方面通过设置空穴传输层5的HOMO值(HTL HOMO)与电子阻挡层4的HOMO值(EBL HOMO)之差的绝对值△E 1大于或等于0.08eV且小于或等于0.3eV，客体材料dopant的三线态能级T1 dopant小于电子阻挡层4的三线态能级T1 EBL，且电子阻挡层4的三线态能级T1 EBL 大于2.4eV，该能级关系既有助于控制空穴自空穴传输层5向电子阻挡层4的注入速率，又利于空穴在空穴型主体材料p-host上的传输，从而使得空穴被有效限制在发光层3中与电子复合形成激子发光，而且激子复合区域向发光层3的中心移动。以上两方面的综合作用，有效避免了空穴在发光层3与电子阻挡层4的界面处堆积，并使空穴更好地向发光层3的内部移动，由此提高了有机电致发光器件的效率和寿命。
并且，本公开实施例提供的上述有机电致发光器件，可以使驱动子像素发光的电压略微升高，从而可以匹配面板内各子像素电压需求，防止低灰阶面板发红，达到高效率、长寿命的技术效果。
可选地，在本公开实施例提供的上述有机电致发光器件中，为有效控制空穴的传输速率，可以设置空穴传输层的电子迁移率和电子阻挡层的电子迁移率的比值在1～10 4之间，例如比值为1、10、100、1000、10000等。
可选地，在本公开实施例提供的上述有机电致发光器件中，空穴传输层的电子迁移率为10 -5cm 2/(V.s)～10 -3cm 2/(V.s)，例如10 -5cm 2/(V.s)、10 -4cm 2/(V.s)、10 -3cm 2/(V.s)等。电子阻挡层的电子迁移率为10 -7cm 2/(V.s)～10 -5cm 2/(V.s)，例如10 -7cm 2/(V.s)、10 -6cm 2/(V.s)、10 -5cm 2/(V.s)等。
可选地，在本公开实施例提供的上述有机电致发光器件中，如图2所示，电子阻挡层4的LUMO值(EBL LUMO)与空穴型主体材料p-host的LUMO值(p-host LUMO)之差的绝对值△E 2大于0.3eV，可以有效阻挡电子，使空穴-电子在发光层3更有效发光。
可选地，在本公开实施例提供的上述有机电致发光器件中，如图2所示，空穴型主体材料p-host的HOMO值p-host HOMO与电子型主体材料n-host的HOMO值n-host HOMO之差的绝对值△E 3大于或等于0.25eV且小于或等于0.75eV。这样有利于形成激基复合物exciplex，双主体材料有利于电荷平衡使激子复合区域向发光层中心移动，最终的效果就是，使空穴-电子对更有效在发光层复合发光，而且激子复合区域向发光层中心移动，提高器件的效率和寿命。
可选地，在本公开实施例提供的上述有机电致发光器件中，如图1所示，电子阻挡层4的折射率大于空穴传输层5的折射率。经过模拟验证，如图3A和图3B所示，电子阻挡层4的折射率大于空穴传输层5的折射率有利于提升发光效率和色彩饱和度CIEx(例如实现深红发光)。
可选地，在本公开实施例提供的上述有机电致发光器件中，如图1所示，空穴传输层5的折射率为1.7～1.8，电子阻挡层4的折射率为1.8～2.0。电子阻挡层4的折射率大于空穴传输层5的折射率，还可以将红色发光器件对应的电子阻挡层设置成相对其他颜色发光器件对应的电子阻挡层厚度更厚，有利于微腔效应增强，可以提升出光效率。
可选地，在本公开实施例提供的上述有机电致发光器件中，电子阻挡层的材料可以含有二苯并噻吩(DBT)，例如电子阻挡层的材料结构通式可以为但不限于
Figure PCTCN2022103408-appb-000008
Figure PCTCN2022103408-appb-000009
其中，Ar 1-Ar 3为C1-C5烷基取代或未取代的C6-C30的芳基或杂芳基，C3-C10环烷基取代或未取代的C6-C30的芳基或杂芳基；X为O、S、C、Si或N-R，R为烷基或环烷基取代或未取代的亚苯基、联苯或三联苯。
可选地，在本公开实施例提供的上述有机电致发光器件中，电子阻挡层 的材料可以为
Figure PCTCN2022103408-appb-000010
Figure PCTCN2022103408-appb-000011
可选地，在本公开实施例提供的上述有机电致发光器件中，本公开采用双主体材料体系有利于电荷平衡使激子复合区域向发光层中心移动，如图4所示，相对单组份发光层材料，p-host靠近空穴传输层，n-host靠近电子传输层。具体地，空穴型主体材料P-host可以含有吲哚并咔唑基团或茚并咔唑基团，有利于空穴传输，该空穴型主体材料P-host的结构通式可以为
Figure PCTCN2022103408-appb-000012
其中，R 1、R 2为烷基，芳基；Ar 1-Ar 3为取代或未取代的芳基或杂芳基。
电子型主体材料n-host可以含有三嗪基团，有利于电子传输，该电子型主体材料n-host的结构通式可以为
Figure PCTCN2022103408-appb-000013
其中，L 1-L 3为取代或未取代的芳基或杂芳基。
可选地，在本公开实施例提供的上述有机电致发光器件中，由电子型主体材料n-host和空穴型主体材料p-host混合形成的激基复合物exciplex相对于空穴型主体材料(p-host)和电子型主体材料(n-host)单组份具有更长的波长光谱；有利于能量有效传给客体材料dopant；客体材料dopant可以为有机金属配合物，金属例如包括铱或铂，例如Ir(ppy)2(acac)、Ir(ppy)3等。
可选地，在本公开实施例提供的上述有机电致发光器件中，激基复合物exciplex的三线态能级T1 exciplex与单线态能级S1 exciplex的能级差△EST小于或等于0.1eV，即该激基复合物exciplex具有热活化延迟性质(TADF)，发光效率较高。
可选地，激基复合物exciplex的发射光谱峰值(PL peak)大于或等于500nm且小于或等于580nm。
可选地，在本公开实施例提供的上述有机电致发光器件中，如图5所示，空穴型主体材料p-host的发射光谱峰值(PL peak)小于电子型主体材料n-host的发射光谱峰值(PL peak)；例如空穴型主体材料p-host的发射光谱峰值(PL peak)大于或等于350nm且小于或等于490nm，电子型主体材料n-host的发射光谱峰值(PL peak)大于或等于350nm且小于或等于490nm；
激基复合物exciplex的发射光谱峰值(PL peak)大于或等于500nm且小于或等于580nm。
相关技术中，红色发光层(R_E M L)的主体材料使用的为电子-空穴型单主体(single)体系，该体系效率已不能满足目前量产需求。而本公开提供的发光器件可以具有较高的效率和寿命。并且由上述发射光谱可知，本公开适用于红光磷光体系和绿光磷光体系。也就是说，本公开中的发光层可以为红色发光层或绿色发光层。另外，在绿色有机电致发光器件和红色有机电致发光器件采用本公开提供的器件结构的情况下，可较好地改善面板的整体性能。
可选地，在本公开实施例提供的上述有机电致发光器件中，发光层的厚度为20nm～70nm，客体材料在发光层中掺杂比例为2％～10％，例如2％、3％、4％、5％、6％、7％、8％、9％、10％等。一方面该掺杂比例使得主体材料(包括空穴型主体材料p-host和电子型主体材料n-host)可将激子能量有效转移给客体材料dopant来激发客体材料发光，另一方面主体材料(包括空穴型主体材料p-host和电子型主体材料n-host)对客体材料进行了“稀释”，有效改善了客体材料分子间相互碰撞、以及能量间相互碰撞引起的荧光淬灭，提高了发光效率和器件寿命。
可选地，在本公开实施例提供的上述有机电致发光器件中，如图1所示，一般还可以包括：位于阳极1和空穴传输层5之间的空穴注入层6，位于发光层3和阴极2之间的空穴阻挡层7，位于空穴阻挡层7和阴极2之间的电子传输层8，以及位于阴极2与电子传输层8之间的电子注入层9。
可选地，在本公开实施例提供的上述有机电致发光器件中，空穴注入层的厚度可以为5nm～20nm，空穴传输层的厚度可以为80nm～150nm，空穴阻挡层的厚度可以为5nm～20nm，电子传输层的厚度可以为20nm～50nm，电子注入层厚度可以为1nm～10nm。
可选地，在本公开实施例提供的上述有机电致发光器件中，空穴阻挡层的材料可以为三嗪类化合物或BAlq等。可选地，空穴型主体材料p-host可以为TCP、CBP、mCP等。可选地，电子型主体材料n-host可以为含氮杂环类化合物或含氰基芳杂环化合物等。可选地，空穴传输层可以为芳胺类化合物如NPB和TPD等。可选地，空穴注入层可为单组份膜层如HATCN、CuPc、 MoO 3等，也可为掺杂膜层如轴烯类或醌类化合物掺杂芳胺化合物，具体可为F4TCNQ掺杂NPB或TPD。
具体地，电子传输层可以为含氮杂环类化合物(如Bphen、TPBi)等电子传输型材料与八羟基喹啉锂(LiQ)的混合物，例如Bphen、TPBi、LiQ、BAlq、TCP、CBP、mCP、Ir(ppy)3、Ir(ppy)2(acac)、NPB、TPD、HATCN、CuPc和F4TCNQ、DCzDCN、PO-T2T的结构式如下：
Figure PCTCN2022103408-appb-000014
Figure PCTCN2022103408-appb-000015
需要说明的是，有机电致发光器件的发光类型可以为顶发射结构，也可以为底发射结构，二者区别在于器件的出光方向是穿过基底发射还是背离基底的方向出光。对于底发射结构来说，器件的出光方向为穿过基底发射；对于顶发射结构来说，器件的出光方向为背离基底方向出光。
需要说明的是，有机电致发光器件的结构可以为正置结构，也可以为倒置结构，二者区别在于膜层制作顺序不同，具体为：正置结构是在基底上依次形成阴极、电子注入层、电子传输层、空穴阻挡层、发光层、电子阻挡层、空穴传输层和阳极，倒置结构是在基底上依次形成阳极、空穴传输层、电子阻挡层、发光层、空穴阻挡层、电子传输层、电子注入层和阴极。
本公开实施例提供的有机电致发光器件可以为正置底发射结构、正置顶发射结构、倒置顶发射结构或者倒置底发射结构，对此不做限定。
另外，下面以制作红色有机电致发光器件为例对本公开的器件寿命和效率进行说明。具体可采用以下方法来制作正置红色有机电致发光器件：
(1)在基底10上形成像素驱动电路，以及与像素驱动电路电连接的阳极1，如图6所示；具体地，像素驱动电路包括多个晶体管和至少一个存储电容，图6中具体示出了与阳极1电连接的驱动晶体管20。一般地，如图6所示，还可以包括栅绝缘层30、层间介质层40、平坦层50和像素界定层60。
(2)使用金属掩膜版(Open mask)，在阳极1所在层上依次蒸镀形成5nm～20nm厚的空穴注入层，以及80nm～120nm厚的空穴传输层。
(3)使用精细金属掩膜板(FMM)，在空穴传输层上依次蒸镀厚度为 20nm～100nm的电子阻挡层，以及厚度为20nm～70nm的发红光的发光层3，其中红色发光客体材料在发光层中的掺杂质量比为2％～10％，空穴型主体材料p-host与电子型主体材料n-host的质量比可以为1:99～99:1。
(4)使用金属掩膜版(Open mask)，在发光层3上依次蒸镀形成5nm～20nm厚的空穴阻挡层和20nm～50nm厚的电子传输层。
(5)使用金属掩膜版(Open mask)，在电子传输层上蒸镀电子注入层，之后在电子注入层上蒸镀形成金属材质的阴极。
具体地，在本公开中采用上述制作方法制作了一个对比例和两个实施例，其中，对比例与各实施例中的空穴注入层HIL、空穴传输层HTL、空穴阻挡层HBL、电子传输层ETL、电子注入层EIL和阴极Cathode的材料相同，具体的电子传输层ETL由质量比为5:5的电子传输型材料与八羟基喹啉锂构成；不同之处在于电子阻挡层EBL、发光层EML。
其中，部分膜层的材料如下表1：
表1
Figure PCTCN2022103408-appb-000016
详细参数如表2所示：
表2
Figure PCTCN2022103408-appb-000017
其中，P+N RH：RD表示本公开实施例提供的发光层包括空穴型主体材料、电子型主体材料和客体材料。
上述对比例和实施例1-2的器件性能数据如表3所示：
表3
  电压 效率 寿命 CIEx CIEy
对比例1 100％ 100％ 100％ 0.675 0.29
实施例1 98％ 110％ 103％ 0.682 0.31
实施例2 102％ 120％ 108％ 0.69 0.31
由表3可见，本公开所提供的实施例1-2的器件效率、寿命、色彩饱和度都有很大提高。
基于同一发明构思，本公开实施例还提供了一种显示面板，包括：多个子像素单元，至少部分子像素单元包括上述有机电致发光器件。由于该显示面板解决问题的原理与上述有机电致发光器件解决问题的原理相似，因此，该显示面板的实施可以参见上述有机电致发光器件的实施例，重复之处不再赘述。
可选地，在本公开实施例提供的上述显示面板中，如图7所示，图7未示出电子注入层，子像素单元包括：红色子像素单元R、绿色子像素单元G和蓝色子像素单元B；其中，
红色子像素单元R和绿色子像素单元G包括上述有机电致发光器件，蓝色子像素单元B包括蓝色有机电致发光器件；
蓝色有机电致发光器件的发光层包括：电子型主体材料(BH)和蓝光客体材料(BD)；
红色子像素单元R的电子阻挡层的厚度、绿色子像素单元G的电子阻挡层的厚度、蓝色子像素单元B的电子阻挡层的厚度依次减小，将红色子像素单元R的电子阻挡层设置成相对其他颜色子像素单元对应的电子阻挡层厚度更厚，有利于微腔效应增强，可以提升出光效率；
全部子像素单元的空穴注入层6为同一膜层，全部子像素单元的空穴传输层5为同一膜层，全部子像素单元的空穴阻挡层7为同一膜层，全部子像 素单元的电子传输层8为同一膜层，每个子像素单元的电子阻挡层4和发光层3相互独立。
基于同一发明构思，本公开实施例还提供了一种显示装置，包括本公开实施例提供的上述显示面板。
具体地，显示装置的类型可以为有机发光二极管(OrganicLight-Emitting Diode，OLED)显示装置、平面转换(In-Plane Switching，IPS)显示装置、扭曲向列型(Twisted Nematic，TN)显示装置、垂直配向技术(Vertical Alignment，VA)显示装置、电子纸、QLED(Quantum Dot Light Emitting Diodes，量子点发光)显示装置或者micro LED(微发光二极管，μLED)显示装置等显示装置中的任意一种，本公开对此并不具体限制。
该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本发明的限制。由于该显示装置解决问题的原理与前述一种有机电致发光器件相似，因此该显示装置的实施可以参见前述有机电致发光器件的实施，重复之处不再赘述。
本公开实施例提供的上述有机电致发光器件、显示面板及显示装置，一方面通过设置空穴传输层的电子迁移率大于电子阻挡层的电子迁移率，增大了空穴传输层和电子阻挡层的能级势垒，避免了空穴过多、过快地传输至电子阻挡层，以解决空穴在电子阻挡层/发光层之间累积的问题，改善复合区域靠近电子阻挡层一侧的情况；另一方面通过设置空穴传输层的HOMO值与电子阻挡层的HOMO值之差的绝对值大于或等于0.08eV且小于或等于0.3eV，客体材料的三线态能级小于电子阻挡层的三线态能级，且电子阻挡层的三线态能级大于2.4eV，该能级关系既有助于控制空穴自空穴传输层向电子阻挡层的注入速率，又利于空穴在空穴型主体材料上的传输，从而使得空穴被有效限制在发光层中与电子复合形成激子发光，而且激子复合区域向发光层的中心移动。以上两方面的综合作用，有效避免了空穴在发光层与电子阻挡层的 界面处堆积，并使空穴更好地向发光层的内部移动，由此提高了有机电致发光器件的效率和寿命。
尽管已描述了本公开的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本公开范围的所有变更和修改。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开实施例的精神和范围。这样，倘若本公开实施例的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (20)

  1. 一种有机电致发光器件，其中，包括：相对设置的阳极和阴极，位于所述阳极和所述阴极之间的发光层，位于所述发光层与所述阳极之间的电子阻挡层，以及位于所述电子阻挡层与所述阳极之间的空穴传输层；其中，
    所述发光层包括：由电子型主体材料和空穴型主体材料混合形成的激基复合物，以及在所述激基复合物中掺杂的客体材料；
    所述空穴传输层的电子迁移率大于所述电子阻挡层的电子迁移率，所述空穴传输层的HOMO值与所述电子阻挡层的HOMO值之差的绝对值大于或等于0.08eV且小于或等于0.3eV，所述客体材料的三线态能级小于所述电子阻挡层的三线态能级，且所述电子阻挡层的三线态能级大于2.4eV。
  2. 如权利要求1所述的有机电致发光器件，其中，所述空穴传输层的电子迁移率和所述电子阻挡层的电子迁移率的比值在1～10 4之间。
  3. 如权利要求1或2所述的有机电致发光器件，其中，所述空穴传输层的电子迁移率为10 -5cm 2/(V.s)～10 -3cm 2/(V.s)，所述电子阻挡层的电子迁移率为10 -7cm 2/(V.s)～10 -5cm 2/(V.s)。
  4. 如权利要求1所述的有机电致发光器件，其中，所述电子阻挡层的LUMO值与所述空穴型主体材料的LUMO值之差的绝对值大于0.3eV。
  5. 如权利要求1所述的有机电致发光器件，其中，所述空穴型主体材料的HOMO值与所述电子型主体材料的HOMO值之差的绝对值大于或等于0.25eV且小于或等于0.75eV。
  6. 如权利要求1所述的有机电致发光器件，其中，所述电子阻挡层的折射率大于所述空穴传输层的折射率。
  7. 如权利要求1-6任一项所述的有机电致发光器件，其中，所述空穴传输层的折射率为1.7～1.8，所述电子阻挡层的折射率为1.8～2.0。
  8. 如权利要求7所述的有机电致发光器件，其中，所述电子阻挡层的材 料结构通式为
    Figure PCTCN2022103408-appb-100001
    Figure PCTCN2022103408-appb-100002
    其中，Ar 1-Ar 3为C1-C5烷基取代或未取代的C6-C30的芳基或杂芳基，C3-C10环烷基取代或未取代的C6-C30的芳基或杂芳基；X为O、S、C、Si或N-R，R为烷基或环烷基取代或未取代的亚苯基、联苯或三联苯。
  9. 如权利要求8所述的有机电致发光器件，其中，所述电子阻挡层的材料为
    Figure PCTCN2022103408-appb-100003
    Figure PCTCN2022103408-appb-100004
  10. 如权利要求1-6任一项所述的有机电致发光器件，其中，所述空穴型主体材料的结构通式为
    Figure PCTCN2022103408-appb-100005
    其中，R 1、R 2为烷基，芳基；Ar 1-Ar 3为取代或未取代的芳基或杂芳基。
  11. 如权利要求1-6任一项所述的有机电致发光器件，其中，所述电子型主体材料的结构通式为
    Figure PCTCN2022103408-appb-100006
    其中，L 1-L 3为取代或未取代的芳基或杂芳基。
  12. 如权利要求1-6任一项所述的有机电致发光器件，其中，所述客体材料为有机金属配合物，所述金属包括铱或铂。
  13. 如权利要求1-6任一项所述的有机电致发光器件，其中，所述激基复合物的三线态能级与单线态能级的能级差小于或等于0.1eV。
  14. 如权利要求1-6任一项所述的有机电致发光器件，其中，所述空穴型主体材料的发射光谱峰值小于所述电子型主体材料的发射光谱峰值；
    所述激基复合物的发射光谱峰值大于或等于500nm且小于或等于580nm。
  15. 如权利要求1-6任一项所述的有机电致发光器件，其中，所述发光层的厚度为20nm～70nm，所述客体材料在所述发光层中掺杂比例为2％～10％。
  16. 如权利要求1-6任一项所述的有机电致发光器件，其中，还包括：位于所述阳极和所述空穴传输层之间的空穴注入层，位于所述发光层和所述阴极之间的空穴阻挡层，位于所述空穴阻挡层和所述阴极之间的电子传输层，以及位于所述电子传输层和所述阴极之间的电子注入层；
    所述空穴注入层的厚度为5nm～20nm，所述空穴传输层的厚度为80nm～150nm，所述空穴阻挡层的厚度为5nm～20nm，所述电子传输层的厚度为20nm～50nm，所述电子注入层厚度为1nm～10nm。
  17. 如权利要求1-6任一项所述的有机电致发光器件，其中，所述发光层为红色发光层或绿色发光层。
  18. 一种显示面板，其中，包括：多个子像素单元，至少部分所述子像素单元包括如权利要求1～17任一项所述的有机电致发光器件。
  19. 如权利要求18所述的显示面板，其中，所述子像素单元包括：红色子像素单元、绿色子像素单元和蓝色子像素单元；其中，
    所述红色子像素单元和所述绿色子像素单元包括如权利要求1～16任一项所述的有机电致发光器件，所述蓝色子像素单元包括蓝色有机电致发光器件；
    所述蓝色有机电致发光器件的发光层包括电子型主体材料和蓝光客体材料；
    所述红色子像素单元的电子阻挡层的厚度、所述绿色子像素单元的电子阻挡层的厚度、所述蓝色子像素单元的电子阻挡层的厚度依次减小；
    全部所述子像素单元的空穴阻挡层为同一膜层，且全部所述子像素单元 的电子传输层为同一膜层。
  20. 一种显示装置，其中，包括如权利要求18或19所述的显示面板。
PCT/CN2022/103408 2021-07-21 2022-07-01 有机电致发光器件、显示面板及显示装置 WO2023000961A1 (zh)

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