WO2016015422A1 - 有机发光二极管阵列基板及显示装置 - Google Patents

有机发光二极管阵列基板及显示装置 Download PDF

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WO2016015422A1
WO2016015422A1 PCT/CN2014/092528 CN2014092528W WO2016015422A1 WO 2016015422 A1 WO2016015422 A1 WO 2016015422A1 CN 2014092528 W CN2014092528 W CN 2014092528W WO 2016015422 A1 WO2016015422 A1 WO 2016015422A1
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layer
light emitting
organic light
array substrate
emitting diode
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PCT/CN2014/092528
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French (fr)
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高昕伟
李娜
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京东方科技集团股份有限公司
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Priority to US14/771,220 priority Critical patent/US10193096B2/en
Publication of WO2016015422A1 publication Critical patent/WO2016015422A1/zh

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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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    • H10K50/00—Organic light-emitting devices
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    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole

Definitions

  • At least one embodiment of the present invention is directed to an organic light emitting diode array substrate and a display device.
  • the organic light emitting diode display device has the advantages of active illumination, wide viewing angle, high contrast, fast response, and the like, and is known as a new generation of display technology.
  • An organic light emitting diode (OLED) array substrate is one of the main components of an organic light emitting diode display device, and includes a plurality of sub-pixels, each of which has an organic light emitting diode that emits light of a specific color.
  • At least one embodiment of the present invention provides an organic light emitting diode array substrate and a display device to simplify an apparatus for fabricating an organic light emitting diode array substrate and improve luminous efficiency.
  • At least one embodiment of the present invention provides an organic light emitting diode array substrate including a plurality of organic light emitting diodes including an anode, a light emitting layer, a cathode disposed in sequence, and disposed between the anode and the light emitting layer Contacting the exciton blocking layer of the luminescent layer.
  • the luminescent layer comprises a plurality of colors, and the forming material thereof comprises a host material and a guest material doped in the host material; the forming material of the exciton blocking layer comprises a host material of a luminescent layer, the host material at all
  • the bulk material of the luminescent layer has the largest highest occupied molecular orbital energy level.
  • At least one embodiment of the present invention also provides a display device including the above-described organic light emitting diode array substrate.
  • 1 is a cross-sectional view showing an organic light emitting diode in an organic light emitting diode array substrate; intention;
  • FIG. 2 is a schematic cross-sectional structural view of an organic light emitting diode in an organic light emitting diode array substrate according to Embodiment 2 of the present invention
  • FIG. 3 is a schematic diagram showing energy levels of partial layers of an organic light emitting diode in an organic light emitting diode array substrate according to Embodiment 2 of the present invention.
  • Reference numerals are: 1, anode; 2, hole injection layer; 3, hole transport layer; 4, light-emitting layer; 5, electron transport layer; 6, electron injection layer; 7, cathode; 8, exciton blocking layer ; 9, the base.
  • FIG. 1 An organic light emitting diode structure is as shown in FIG. 1, which may include an anode 1, a hole injection layer 2 (HIL), a hole transport layer 3 (HTL), and a light-emitting layer which are sequentially disposed on a substrate 9 (generally composed of glass).
  • Layer 4 EML
  • electron transport layer 5 ETL
  • EIL electron injection layer 6
  • the luminescent layer is a core of the organic light emitting diode, and the forming material comprises a host material and a guest material doped in the host material, and the highest occupied molecular orbital (HOMO) level of the host material is greater than the HOMO level of the guest material, and the lowest unoccupied The molecular orbital (LUMO) energy level is lower than the LUMO energy level of the guest material; thus, when electrons and holes are transmitted to the light-emitting layer, excitons (excited state molecules) are generated in the guest material, and when the excitons fall back to the ground state, The form of light releases energy to illuminate; by selecting the host material and the guest material, the color of the luminescence can be controlled.
  • HOMO molecular orbital
  • the excited states of the excitons in the luminescent layer are singlet and triplet.
  • the time for the singlet excitons to fall back from the excited state to the ground state is shorter, so the energy is released in the form of light energy, which can achieve luminescence; and the triplet excitons
  • the process of falling directly from the excited state to the ground state is limited, and the relaxation time is long, so the energy may be released in the form of non-light energy (thermal energy, vibration energy, etc.), resulting in a decrease in luminous efficiency; especially for the fluorescent light-emitting layer,
  • the phosphorescent luminescent layer there is spin-orbit coupling, so its triplet excitons cannot emit light, resulting in a theoretical luminous efficiency of only 25% (the ratio of singlet and triplet excitons is 1:3).
  • the triplet excitons can also be quenched with each other, and the energy can be released in the form of light energy, thereby improving the luminous efficiency of the triplet excitons.
  • the energy level and the triplet energy level can limit the triplet excitons in the light-emitting layer, increase the probability of quenching between the triplet excitons, and improve the luminous efficiency.
  • the OLED array substrate many layers are formed by an evaporation process, and layers of different materials are separately manufactured by different evaporation apparatuses (such as an evaporation chamber), so if an exciton blocking layer is to be added, To increase the corresponding evaporation equipment, the preparation equipment is complicated and costly; and if the exciton blocking layer is not provided, the luminous efficiency of the organic light emitting diode is low.
  • the embodiment provides an organic light emitting diode array substrate, which includes a plurality of organic light emitting diodes, the organic light emitting diode includes an anode, a light emitting layer, and a cathode disposed in sequence, and the light emitting layer includes a plurality of colors, and the forming material thereof comprises a host material and a blending a guest material miscellaneous in the host material; and the organic light emitting diode further includes: an exciton blocking layer disposed between the anode and the light emitting layer and contacting the light emitting layer, the forming material comprising a body material of the light emitting layer, the body material at all
  • the bulk material of the luminescent layer has the largest highest occupied molecular orbital energy level. This ensures that the exciton blocking layer acts to block the excitons.
  • the host material of the above-described one of the light-emitting layers may have the largest triplet level in the host material of all of the light-emitting layers.
  • the exciton blocking layer exists in the OLED array substrate of the embodiment, so that the probability of triplet excitons being mutually quenched is increased, and the luminous efficiency is improved.
  • the material of the exciton blocking layer includes a luminescent layer. a host material (such as a host material of a blue light-emitting layer), so that it can be fabricated by an evaporation device for preparing the light-emitting layer, thereby improving luminous efficiency without increasing preparation equipment and cost; and, for top emission type organic A light-emitting diode array substrate, a method for fabricating an exciton blocking layer by adding an evaporation device, requires a fine metal mask to be used in the preparation process of the hole transport layer to adjust the thickness of the cavity and thereby control the wavelength of light, which results in a preparation device
  • the exciton blocking layer in the organic light emitting diode array substrate of the embodiment is manufactured by the manufacturing device of the light emitting layer, and the light emitting layer preparing device has a fine metal mask
  • the exciton blocking layer may have a thickness of 1 to 200 nanometers.
  • the exciton blocking layer in the above thickness range can not only improve the luminous efficiency, but also does not adversely affect other properties of the organic light emitting diode.
  • the organic light emitting diode array substrate is a top emission type organic light emitting diode array substrate; the thickness of the exciton blocking layer in contact with the different color light emitting layers is different. That is, for the top emission type organic light emitting diode array substrate, the thickness of the exciton blocking layer in the organic light emitting diodes of different colors is different.
  • the light emitted from the light emitting layer is repeatedly oscillated in the resonant cavity between the cathode and the anode reflective layer, and the wavelength of the emitted light is related to the thickness of the resonant cavity; therefore, The thickness of the cavity in the organic light-emitting diodes of different colors is also different, so that the wavelength range of the emitted light is better matched with the color.
  • the thickness of the cavity is mainly adjusted by making the thickness of the hole transport layer in the different color organic light emitting diodes different, and if the thickness of the hole transport layer is to be different, it must be An FFM (Fine Metal Mask) is used in the evaporation process to form hole transport layers in organic light emitting diodes of different colors, respectively.
  • FFM Fe Metal Mask
  • the hole transport layer of each of the organic light emitting diodes can be simultaneously formed by one vapor deposition, there is no fine metal mask in the conventional hole transport layer vapor deposition apparatus. Therefore, in order to make the thickness of the hole transport layer different, A fine metal mask must be added, which results in a complicated structure and an increased cost of the preparation equipment.
  • the thickness of the cavity is adjusted by adjusting the thickness of the exciton blocking layer, and the material for forming the exciton blocking layer includes the material of the light emitting layer, so that it can be fabricated by an evaporation device for preparing the light emitting layer;
  • the organic light emitting diode has different light emitting layer materials, so the vapor deposition device for preparing the light emitting layer itself has a fine metal mask (to ensure that the light emitting layer is formed only in a desired region); thus, the direct use of the light emitting layer preparation device
  • the adjustment of the thickness of the cavity can be realized without adding a fine metal mask to the device, which makes the preparation device simple in structure and low in cost.
  • the light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer; and the exciton blocking layer forming material includes a host material of the blue light emitting layer.
  • the red, green and blue tri-color mode (RGB mode) is the most commonly used mode in the display.
  • the main material of the blue luminescent layer usually has HOMO energy greater than or equal to the other two luminescent layer host materials. Level and triplet energy levels, so at this time, the main material of the blue light-emitting layer can be used to create Sub-barrier layer.
  • the host material of the green light-emitting layer is the same as the host material of the blue light-emitting layer. That is to say, the green light-emitting layer can employ the same host material as the blue light-emitting layer (of course, the guest material is different), thereby further simplifying the manufacturing apparatus and process.
  • the red light-emitting layer can theoretically adopt the same host material as the blue light-emitting layer, but its implementation is difficult.
  • the host material of the blue light-emitting layer may be 3-tert-butyl-9,10-bis(2-naphthalene)anthracene (MADN), 4,4'-bis(2,2-stilbene) 1,1,1'-biphenyl (DPVBi), 4,4'-bis(9-carbazole)biphenyl (CBP), 4,4',4"-tris(carbazol-9-yl) Any one of aniline (TCTA) and 1,3-N,N-dicarbazole-benzene (mCP).
  • the above materials are suitable as the host material of the blue light-emitting layer of the embodiment of the present invention in various aspects such as conductivity, energy level, hole and electron transport performance.
  • the blue light-emitting layer is a fluorescent light-emitting layer; and/or the red light-emitting layer and the green light-emitting layer are phosphorescent light-emitting layers.
  • the phosphorescent emitting layer generally has higher luminous efficiency than the fluorescent emitting layer, so the red emitting layer and the green emitting layer are preferably phosphorescent emitting layers; and the current blue phosphorescent emitting layer is still in terms of lifetime, color purity, and the like.
  • the blue light-emitting layer is preferably a fluorescent light-emitting layer.
  • the organic light emitting diode may further include: a hole transport layer disposed between the anode and the exciton blocking layer; and an electron transport layer disposed between the cathode and the light emitting layer.
  • the organic light emitting diode may further include: a hole injection layer disposed between the hole transport layer and the anode; and an electron injection layer disposed between the electron transport layer and the cathode.
  • the above layers improve the transmission of electrons and holes, thereby improving the performance of the organic light emitting diode.
  • the embodiment provides an organic light emitting diode array substrate.
  • the OLED array substrate includes a plurality of sub-pixels, and each of the sub-pixels is provided with one organic light-emitting diode; at the same time, the sub-pixels are divided into three colors of red, green, and blue, that is, the organic light-emitting diodes in the sub-pixels are also divided into Red, green, and blue.
  • the organic light emitting diode is disposed on the substrate 9 (usually made of glass).
  • the anode includes the anode 1, the hole injection layer 2, and the hole transport layer 3.
  • Anode 1 It is made of a transparent indium tin oxide (ITO) material and has a thickness of 130 nm.
  • ITO transparent indium tin oxide
  • Hole injection layer 2 which is composed of 4,4',4"-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA, HOMO level 5.1 eV, LUMO The energy level is 2.0 eV) and the thickness is 65 nm.
  • Hole transport layer 3 which is composed of N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB)
  • NPB N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine
  • the HOMO level is 5.4 ev
  • the LUMO level is 2.4 eV
  • the thickness is 20 nm.
  • Exciton blocking layer 8 Regardless of the color of the organic light emitting diode, the material of the exciton blocking layer 8 is the same as that of the blue light emitting layer 4, and may be 1,3-N, N- Dicarbazole-benzene (mCP, HOMO level 6.1 eV, LUMO level 2.4 eV, triplet level 2.9 eV), thickness 10 nm.
  • Fig. 3 shows the relationship between the exciton blocking layer and the HOMO level and the LUMO level of each color light-emitting layer 4 in this embodiment.
  • the higher position indicates the higher energy level
  • the solid line box indicates the energy level of the host material
  • the dashed box indicates the energy level of the guest material. It can be seen that, due to the same material, the HOMO energy levels of the exciton blocking layer 8 and the blue light emitting layer 4 host material are equal, and both are higher than the HOMO energy levels of the green light emitting layer 4 and the red light emitting layer 4 host material, thereby ensuring excitons.
  • the barrier layer 8 can function to block excitons.
  • Light-emitting layer 4 For different color organic light-emitting diodes, the light-emitting layer 4 is also a corresponding color.
  • the green organic light emitting diode has a green light emitting layer 4, and its host material is, for example, Green Host1 (HOMO level 5.39 eV, LUMO level 1.95 eV, triplet level 2.38 eV), and the guest material is Green Dopant 1 (HOMO level 5.14 eV).
  • the LUMO level is 2.74 eV
  • the triplet level is 2.36 eV
  • the doping mass percentage is 3%
  • the thickness is 30 nm.
  • the red light-emitting diode has a red light-emitting layer 4, and its main material is Red Host1 (HOMO level 5.4eV, LUMO level 2.8eV, triplet level 2.2eV), and the guest material is Red Dopant1 (HOMO level 5.1eV, LUMO)
  • the energy level is 3.1 eV
  • the triplet energy level is 2 eV
  • the doping mass percentage is 4%
  • the thickness is 40 nm.
  • the blue organic light-emitting diode has a blue light-emitting layer 4, and its main material is 1,3-N,N-dicarbazole-benzene (mCP, HOMO level 6.1 eV, LUMO level 2.4 eV, triplet level 2.9 eV), the guest material is Blue Dopant1 (HOMO level 5.5eV, LUMO level 2.7eV, triplet level 2.7eV, doping mass percentage 2%), thickness 20nm.
  • Green Host1, Green Dopant1, Red Host1, Red Dopant1, and Blue Dopant1 are all commercially available luminescent layer host materials and commercial materials, which are common materials, so their specific components are not Then limit it. It will be appreciated that those skilled in the art may also select other known materials or products for use as the host material and guest material for these luminescent layers.
  • Electron transport layer 5 the material is bis(2-methyl-8-hydroxyquinoline)(4-biphenyloxy)aluminum (BAlq, HOMO level 5.9 ev, LUMO level 2.9 eV), thickness It is 20nm.
  • Electron injection layer 6 The material thereof was lithium fluoride (LiF) and the thickness was 1.5 nm.
  • Cathode 7 The material was aluminum and the thickness was 80 nm.
  • the cathode 7 Since the cathode 7 has a large thickness, it has strong reflectivity, and the light incident thereon can be reflected back and emitted from the substrate 9, so that the organic light emitting diode of the present embodiment is of a bottom emission type.
  • the anodes 1 of the respective organic light emitting diodes are independent of each other, so that the luminances of the respective organic light emitting diodes can be independently controlled; and the materials of the different color light emitting layers 4 are different, so they are also independent of each other; For ease of manufacture, other layers of different organic light emitting diodes may be integrated.
  • the illuminance of the OLED of each color of the OLED array substrate of the present embodiment is tested under the maximum gray scale, and the illuminance of the green OLED is 28 cd/A, and the luminescence of the red OLED is 14 cd. /A, the luminance of the blue organic light emitting diode is 7.6 cd/A.
  • the illuminance of the organic light-emitting diodes of the respective colors of the organic light-emitting diode array substrate (which differs only in the exciton blocking layer 8 therein) as a comparative example is tested to obtain a green organic light-emitting diode.
  • the luminance of the light is 21 cd/A
  • the luminance of the red organic light emitting diode is 12 cd/A
  • the luminance of the blue organic light emitting diode is 7.2 cd/A.
  • the exciton blocking layer 8 is increased, the luminous efficiencies of the green organic light emitting diode, the red organic light emitting diode, and the blue organic light emitting diode are increased by 33%, 16%, and 5%, respectively, that is, by providing an exciton blocking layer. 8.
  • the luminous efficiency of each color organic light emitting diode in the organic light emitting diode array substrate can be greatly improved.
  • the exciton blocking layer 8 is composed of the main material of the blue light emitting layer 4, it can be used to prepare blue light. The vapor deposition equipment of layer 4 is prepared, so that it is not necessary to add new equipment and the cost is low.
  • the embodiment provides an organic light emitting diode array substrate.
  • the OLED array substrate includes a plurality of sub-pixels, and each of the sub-pixels is provided with one organic light-emitting diode; at the same time, the sub-pixels are divided into three colors of red, green, and blue, that is, the organic light-emitting diodes in the sub-pixels are also divided into Red, green, and blue.
  • each of the organic light emitting diodes is disposed on the substrate 9 (usually made of glass).
  • the organic light emitting diodes sequentially include: an anode 1, a hole injection layer 2, and a hole transport.
  • Anode 1 It is made of a transparent indium tin oxide material having a thickness of 15 nm; and a metal reflective layer (for example, a silver reflective layer) is further provided on the side of the anode near the substrate 9.
  • a metal reflective layer for example, a silver reflective layer
  • the reflective layer is to be provided is because the organic light emitting diode array substrate of the present embodiment is of a top emission type, that is, light emitted from the light emitting layer 4 is reflected and emitted from the cathode 7.
  • Hole injection layer 2 which is composed of 4,4',4"-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA, HOMO level 5.1 eV, LUMO The energy level is 2.0 eV) and the thickness is 70 nm.
  • Hole transport layer 3 which is composed of N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB) , HOMO level 5.4ev, LUMO level 2.4eV), thickness 15nm.
  • Exciton blocking layer 8 Regardless of the color of the organic light emitting diode, the material of the exciton blocking layer 8 is the same as that of the blue light emitting layer 4, and both are 1,3-N, N- Carbazole-benzene (mCP, HOMO level 6.1 eV, LUMO level 2.4 eV, triplet level 2.9 eV).
  • the thickness of the exciton blocking layer 8 in the organic light emitting diodes of different colors is different to adjust the thickness of the resonant cavity by the thickness of the exciton blocking layer 8, thereby adjusting The wavelength of the emitted light.
  • the exciton blocking layer 8 has a thickness of 35 nm; in the red organic light emitting diode, the exciton blocking layer 8 has a thickness of 45 nm; and in the blue organic light emitting diode, the exciton blocking layer 8 has a thickness of 15 nm.
  • Light-emitting layer 4 The light-emitting layer 4 in the organic light-emitting diodes of different colors is also a corresponding color.
  • the green organic light emitting diode has a green light emitting layer 4, and the main material is Green Host1 (HOMO level 5.39 eV, LUMO level 1.95 eV, triplet level 2.38 eV), and the guest material is Green Dopant 1 (HOMO level 5.14 eV, The LUMO level is 2.74 eV, the triplet level is 2.36 eV, the doping mass percentage is 3%, and the thickness is 30 nm.
  • Green Host1 HOMO level 5.39 eV
  • LUMO level 1.95 eV triplet level 2.38 eV
  • the guest material is Green Dopant 1 (HOMO level 5.14 eV
  • the LUMO level is 2.74 eV
  • the triplet level is 2.36 eV
  • the doping mass percentage is 3%
  • the thickness is 30 nm.
  • the red light-emitting diode has a red light-emitting layer 4, and its main material is Red Host1 (HOMO level 5.4eV, LUMO level 2.8eV, triplet level 2.2eV), and the guest material is Red Dopant1 (HOMO level 5.1eV, LUMO)
  • the energy level is 3.1 eV
  • the triplet energy level is 2 eV
  • the doping mass percentage is 4%
  • the thickness is 40 nm.
  • the blue organic light-emitting diode has a blue light-emitting layer 4, and its main material is 1,3-N,N-dicarbazole-benzene (mCP, HOMO level 6.1 eV, LUMO level 2.4 eV, triplet level 2.9 eV), the guest material is Blue Dopant1 (HOMO level 5.5eV, LUMO level 2.7eV, triplet level 2.7eV, doping mass percentage 2%), thickness 20nm.
  • Electron transport layer 5 the material is bis(2-methyl-8-hydroxyquinoline)(4-biphenyloxy)aluminum (BAlq, HOMO level 5.9 ev, LUMO level 2.9 eV), thickness 20nm.
  • Electron injection layer 6 The material thereof was lithium fluoride (LiF) and had a thickness of 1.5 nm.
  • Cathode 7 The material thereof is a magnesium-silver alloy having a thickness of 15 nm.
  • the cathode 7 has a small thickness and is in a transparent state, allowing light to be emitted therethrough, so that the organic light emitting diode array substrate of the present embodiment is of a top emission type.
  • the anodes 1 of the respective organic light emitting diodes are independent of each other, so that the light emission brightness of each organic light emitting diode can be independently controlled; and the materials of the light emitting layer 4 in different color organic light emitting diodes are different, and the exciton blocking layer is different. 8 different thicknesses, so they are also independent of each other; and in contrast, other layers of different organic light-emitting diodes can be integrated for ease of manufacture.
  • the illuminance of the OLED of each color of the OLED array substrate of the present embodiment is tested under the maximum gray scale, and the illuminance of the green OLED is 47 cd/A, and the luminescence of the red OLED is 27 cd. /A, the blue organic light emitting diode has a luminance of 5.5 cd/A.
  • the illuminance of the organic light-emitting diodes of the respective colors of the organic light-emitting diode array substrate (which differs only in the exciton blocking layer 8 therein) as a comparative example is tested to obtain a green organic light-emitting diode.
  • the luminance of the light is 40 cd/A
  • the luminance of the red organic light emitting diode is 22 cd/A
  • the luminance of the blue organic light emitting diode is 5 cd/A.
  • the luminous efficiencies of the green organic light emitting diode, the red organic light emitting diode, and the blue organic light emitting diode are increased by 17%, 22%, and 10%, respectively, that is, by setting the exciton blocking layer. 8.
  • each color organic light emitting diode in the organic light emitting diode array substrate can be greatly improved; at the same time, since the exciton blocking layer 8 is composed of a blue light emitting layer 4 is composed of the main material, so it can be prepared by an evaporation device for preparing the blue light-emitting layer 4, so that it is not necessary to add new equipment, and the cost is low; in addition, for the top emission type organic light-emitting diode array substrate, the exciton blocking layer 8
  • the preparation device (that is, the preparation device of the blue light-emitting layer 4) has a fine metal mask, so that the exciton blocking layer 8 of different thickness can be formed in the organic light-emitting diodes of the respective colors by using the preparation device. Therefore, the effect of adjusting the thickness of the cavity and the wavelength of the light exiting is eliminated, and it is not necessary to additionally add a fine metal mask to the preparation device of the hole transport layer 3, so that the preparation apparatus is simple and the cost is low.
  • the OLED array substrate of the above embodiments further includes many other structures, such as a driving circuit for driving the illuminating of each OLED, a gate line, a data line, etc.; Form, so it will not be described in detail here.
  • the luminescent layer includes three types of red, green, and blue, but the luminescent layer may have more colors (such as a yellow luminescent layer), but no matter how many colors of the luminescent layer,
  • the light-emitting layer host material having the highest HOMO level is used as the exciton blocking layer, it is to be noted that the light-emitting layer host material having the highest HOMO level and the triplet level can also be used as the exciton blocking layer.
  • the hole injecting layer, the hole transporting layer, the electron injecting layer, and the electron transporting layer in the organic light emitting diode mainly function to improve hole and electron transport, and thus one or more of these layers may be absent.
  • the embodiment provides a display device, which includes any of the above-mentioned organic light emitting diode array substrates, and the display device can be an OLED panel, an electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and a navigation device. Any product or part that has a display function.

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Abstract

一种有机发光二极管阵列基板及显示装置，该有机发光二极管阵列基板包括多个有机发光二极管，有机发光二极管包括依次设置的阳极（1）、发光层（4）、阴极（7）以及设于阳极（1）和发光层（4）间并接触发光层（4）的激子阻挡层（8）；发光层（4）包括多种颜色，并且其形成材料包括主体材料和掺杂在主体材料中的客体材料；激子阻挡层（8）的形成材料包括一种发光层（4）的主体材料，该主体材料在所有发光层（4）的主体材料中具有最大的最高占据分子轨道能级。该结构可解决有机发光二极管阵列基板制备设备复杂或发光效率低的问题。

Description

有机发光二极管阵列基板及显示装置 技术领域
本发明的至少一个实施例涉及一种有机发光二极管阵列基板及显示装置。
背景技术
有机发光二极管显示装置具有主动发光、视角宽、对比度高、响应速度快等优点，被誉为新一代的显示技术。有机发光二极管(OLED)阵列基板是有机发光二极管显示装置的主要组成部分之一，其包括多个子像素，每个子像素中有一个可发出特定颜色光的有机发光二极管。
发明内容
本发明的至少一个实施例提供一种有机发光二极管阵列基板及显示装置，以简化有机发光二极管阵列基板的制备设备并提高发光效率。
本发明的至少一个实施例提供了一种有机发光二极管阵列基板，其包括多个有机发光二极管，所述有机发光二极管包括依次设置的阳极、发光层、阴极，以及设于阳极和发光层间并接触发光层的激子阻挡层。所述发光层包括多种颜色，并且其形成材料包括主体材料和掺杂在主体材料中的客体材料；所述激子阻挡层的形成材料包括一种发光层的主体材料，该主体材料在所有发光层的主体材料中具有最大的最高占据分子轨道能级。
本发明的至少一个实施例还提供了一种显示装置，其包括上述的有机发光二极管阵列基板。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为一种有机发光二极管阵列基板中的有机发光二极管的剖面结构示 意图；
图2为本发明的实施例2的有机发光二极管阵列基板中的有机发光二极管的剖面结构示意图；
图3为本发明的实施例2的有机发光二极管阵列基板中的有机发光二极管的部分层的能级对比示意图。
附图标记为：1、阳极；2、空穴注入层；3、空穴传输层；4、发光层；5、电子传输层；6、电子注入层；7、阴极；8、激子阻挡层；9、基底。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
一种有机发光二极管结构如图1所示，其可以包括在基底9(通常由玻璃构成)上依次设置的阳极1、空穴注入层2(HIL)、空穴传输层3(HTL)、发光层4(EML)、电子传输层5(ETL)、电子注入层6(EIL)、阴极7。
发光层是有机发光二极管的核心，其形成材料包括主体材料和掺杂在主体材料中的客体材料，主体材料的最高占据分子轨道(HOMO)能级大于客体材料的HOMO能级，而最低未占分子轨道(LUMO)能级低于客体材料的LUMO能级；从而当有电子和空穴传输到发光层时，客体材料中将产生激子(激发态分子)，当激子回落至基态时以光的形式释放能量即可发光；通过选择主体材料和客体材料，可控制发光的颜色。
发光层中激子的激发态有单线态和三线态两种，单线态激子从激发态回落至基态的时间较短，故其能量以光能形式释放，可实现发光；而三线态激子直接从激发态回落至基态的过程受限制，弛豫时间长，故其能量可能以非光能(热能、振动能等)形式释放，导致其发光效率降低；尤其是对于荧光发光层，其不像磷光发光层存在自旋轨道耦合作用，故其三线态激子不能发光，导致其理论发光效率只有25％(单线态和三线态激子的产生率比是1∶3)。
经研究发现，三线态激子间也可相互淬灭，此时其能量可以光能形式释放，从而提高三线态激子的发光效率。为实现三线态激子间的淬灭，需要在有机发光二极管中增设与发光层接触的“激子阻挡层”，该层的HOMO能级和三线态能级不能低于发光层主体材料的HOMO能级和三线态能级，这样可将三线态激子限定在发光层中，增加三线态激子间相互淬灭的几率，提高发光效率。
在有机发光二极管阵列基板中，许多层都是通过蒸镀工艺形成的，而不同材料的层要由不同蒸镀设备(如蒸镀腔室)分别制造，故若要增加激子阻挡层，就要增加相应的蒸镀设备，导致其制备设备复杂、成本高；而若不设置激子阻挡层，则有机发光二极管的发光效率又较低。
实施例1
本实施例提供一种有机发光二极管阵列基板，其包括多个有机发光二极管，有机发光二极管包括依次设置的阳极、发光层、阴极，发光层包括多种颜色，并且其形成材料包括主体材料和掺杂在主体材料中的客体材料；且有机发光二极管还包括：设于阳极和发光层间并接触发光层的激子阻挡层，其形成材料包括一种发光层的主体材料，该主体材料在所有发光层的主体材料中具有最大的最高占据分子轨道能级。这保证了激子阻挡层可起到阻挡激子的作用。
为了使激子阻挡层起到更好的阻挡激子的作用，在至少一个示例中，上述一种发光层的主体材料在所有发光层的主体材料中还可以具有最大的三线态能级。
本实施例的有机发光二极管阵列基板中存在激子阻挡层，故其可增加三线态激子相互淬灭的几率，提高发光效率；同时，该激子阻挡层的材料又包括一种发光层的主体材料(如蓝色发光层的主体材料)，故其可用制备该发光层用的蒸镀设备制造，从而可在不增加制备设备和成本的前提下提高发光效率；另外，对于顶发射型有机发光二极管阵列基板，通过增加蒸镀设备来制造激子阻挡层的制备方法需要在空穴传输层制备过程中使用精细金属掩膜板，以调整谐振腔厚度并进而控制出光波长，这导致制备设备复杂，成本高，而本实施例的有机发光二极管阵列基板中的激子阻挡层是由发光层的制备设备制造的，发光层制备设备中本就具有精细金属掩膜板，故其可通过调整激 子阻挡层的厚度直接控制出光波长，从而简化制备设备，降低成本。
在至少一个示例中，所述激子阻挡层的厚度可以为1至200纳米。
经研究发现，以上厚度范围内的激子阻挡层既可起到提升发光效率的作用，又不会对有机发光二极管的其他性能产生不良影响。
在至少一个示例中，所述有机发光二极管阵列基板为顶发射型有机发光二极管阵列基板；与不同颜色发光层接触的激子阻挡层的厚度不同。也就是说，对于顶发射型有机发光二极管阵列基板，其不同颜色的有机发光二极管中的激子阻挡层的厚度不同。
在顶发射型有机发光二极管阵列基板中，发光层发出的光要在阴极和阳极反射层之间的谐振腔中反复振荡后才能射出，而其出射光的波长与谐振腔的厚度有关；因此，不同颜色的有机发光二极管中谐振腔的厚度也不同，以使其出射光的波长范围与颜色更好的匹配。在图1所示情形的制备方法中，主要通过使不同颜色有机发光二极管中的空穴传输层的厚度不同来调节谐振腔厚度，而若要使空穴传输层的厚度不同，则必须在其蒸镀过程中使用FFM(精细金属掩膜板)，以分别形成不同颜色的有机发光二极管中的空穴传输层。但是，各有机发光二极管的空穴传输层本可通过一次蒸镀同时形成，故通常的空穴传输层蒸镀设备中没有精细金属掩膜板，因此，为使空穴传输层的厚度不同，必须增加精细金属掩膜板，这导致制备设备结构复杂，成本提高。
而在本实施例中，通过调整激子阻挡层的厚度来调节谐振腔厚度，而激子阻挡层的形成材料包括发光层主体材料，故可由制备发光层用的蒸镀设备制造；由于不同颜色的有机发光二极管中发光层材料不同，故制备发光层用的蒸镀设备中本身就具有精细金属掩膜板(以保证发光层只形成在所需区域)；这样，直接使用发光层的制备设备即可实现对谐振腔厚度的调节，而不必在设备中增加精细金属掩膜板，这使得制备设备结构简单，成本低。
在至少一个示例中，发光层包括红色发光层、绿色发光层、蓝色发光层；而激子阻挡层的形成材料包括蓝色发光层的主体材料。
红绿蓝三色模式(RGB模式)是显示中最常用的模式，在这三种颜色的发光层中，蓝色发光层的主体材料通常具有大于或等于其他两种发光层主体材料的HOMO能级和三线态能级，故此时可用蓝色发光层的主体材料制造激 子阻挡层。
在至少一个示例中，绿色发光层的主体材料与蓝色发光层的主体材料相同。也就是说，绿色发光层可采用与蓝色发光层相同的主体材料(当然客体材料不同)，从而进一步简化制备设备和工艺。而红色发光层理论上也可采用与蓝色发光层相同的主体材料，但其实现比较困难。
在至少一个示例中，蓝色发光层的主体材料可以为3-叔丁基-9,10-二(2-萘)蒽(MADN)、4,4'-二(2,2-二苯乙烯基)-1,1'-联苯(DPVBi)、4,4'-二(9-咔唑)联苯(CBP)、4,4',4″-三(咔唑-9-基)三苯胺(TCTA)、1,3-N,N-二咔唑-苯(mCP)中的任意一种。
经研究发现，以上材料在导电性、能级、空穴和电子传输性能等各方面均比较适于作为本发明实施例的蓝色发光层的主体材料。
在至少一个示例中，蓝色发光层为荧光发光层；和/或红色发光层和绿色发光层为磷光发光层。
如前所述，磷光发光层通常比荧光发光层具有更高的发光效率，故红色发光层和绿色发光层优选为磷光发光层；而由于目前蓝色磷光发光层在寿命、色纯度等方面还有一定的问题，实际应用比较困难，故蓝色发光层优选采用荧光发光层。
在至少一个示例中，有机发光二极管还可以包括：设于阳极与激子阻挡层之间的空穴传输层；设于阴极与发光层之间的电子传输层。在此基础上，例如，有机发光二极管还可以包括：设于空穴传输层与阳极之间的空穴注入层；设于电子传输层与阴极之间的电子注入层。
以上的各层可改善电子和空穴的传输，从而提升有机发光二极管的性能。
实施例2
如图2、图3所示，本实施例提供一种有机发光二极管阵列基板。
该有机发光二极管阵列基板中包括多个子像素，每个子像素中设有一个有机发光二极管；同时，子像素分为红色、绿色、蓝色三种颜色，即子像素中的有机发光二极管也分为红色、绿色、蓝色三种颜色。
例如，如图2所示，有机发光二极管设在基底9(通常采用玻璃制作)上，在远离基底9的方向上，其依次包括：阳极1、空穴注入层2、空穴传输层3、激子阻挡层8、发光层4、电子传输层5、电子注入层6和阴极7。下面逐一 介绍这些结构。
(1)阳极1：其由透明的氧化铟锡(ITO)材料制成，厚度为130nm。
(2)空穴注入层2：其由4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺(m-MTDATA，HOMO能级5.1eV，LUMO能级2.0eV)制成，厚度为65nm。
(3)空穴传输层3：其由N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺(NPB，HOMO能级5.4ev，LUMO能级2.4eV)制成，厚度为20nm。
(4)激子阻挡层8：不论对于何种颜色的有机发光二极管，其激子阻挡层8的材料都与蓝色发光层4的主体材料相同，均可以为1,3-N,N-二咔唑-苯(mCP，HOMO能级6.1eV，LUMO能级2.4eV，三线态能级2.9eV)，厚度为10nm。
图3示出了本实施例中激子阻挡层与8与各颜色发光层4的HOMO能级和LUMO能级的关系。在图3中，越高的位置表示能级越高，实线框表示主体材料的能级，虚线框表示客体材料的能级。可见，由于材料相同，故激子阻挡层8与蓝色发光层4主体材料的HOMO能级相等，且均高于绿色发光层4和红色发光层4主体材料的HOMO能级，从而保证激子阻挡层8可起到阻挡激子的作用。
(5)发光层4：对不同颜色的有机发光二极管，其中的发光层4也为相应的颜色。
绿色有机发光二极管中有绿色发光层4，其主体材料例如为Green Host1(HOMO能级5.39eV，LUMO能级1.95eV，三线态能级2.38eV)，客体材料为Green Dopant1(HOMO能级5.14eV，LUMO能级2.74eV，三线态能级2.36eV，掺杂质量百分比3％)，厚度为30nm。
红色发光二极管中有红色发光层4，其主体材料为Red Host1(HOMO能级5.4eV，LUMO能级2.8eV，三线态能级2.2eV)，客体材料为Red Dopant1(HOMO能级5.1eV，LUMO能级3.1eV，三线态能级2eV，掺杂质量百分比4％)，厚度为40nm。
蓝色有机发光二极管中有蓝色发光层4，其主体材料为1,3-N,N-二咔唑-苯(mCP，HOMO能级6.1eV，LUMO能级2.4eV，三线态能级2.9eV)，客体材料为Blue Dopant1(HOMO能级5.5eV，LUMO能级2.7eV，三线态能级2.7eV，掺杂质量百分比2％)，厚度为20nm。
在上述示例中，Green Host1、Green Dopant1、Red Host1、Red Dopant1、Blue Dopant1等均为市场上出售的发光层主体材料、客体材料的商品名，其均为常规物质，故此处对其具体成分不再进行限定。应当理解，本领域技术人员也可选择其他已知的物质或产品用作这些发光层的主体材料和客体材料。
(6)电子传输层5：其材料为双(2-甲基-8-羟基喹啉)(4-联苯氧基)铝(BAlq，HOMO能级5.9ev，LUMO能级2.9eV)，厚度为20nm。
(7)电子注入层6：其材料为氟化锂(LiF)，厚度为1.5nm。
(8)阴极7：其材料为铝，厚度为80nm。
该阴极7厚度较大，故具有较强的反射性，可将射到其上的光反射回去并从基底9射出，故本实施例的有机发光二极管为底发射型。
在本实施例中，上述各有机发光二极管的阳极1相互独立，以使各有机发光二极管的发光亮度可被独立控制；而不同颜色发光层4的材料不同，故它们也相互独立；而相对的，为便于制造，不同有机发光二极管的其他层可连为一体。
在最大灰阶下，对本实施例的有机发光二极管阵列基板的各颜色的有机发光二极管的发光亮度进行测试，得到绿色有机发光二极管的发光亮度为28cd/A，红色有机发光二极管的发光亮度为14cd/A，蓝色有机发光二极管的发光亮度为7.6cd/A。
相应的，在最大灰阶下，对作为对比例的有机发光二极管阵列基板(区别仅在于其中没有激子阻挡层8)的各颜色的有机发光二极管的发光亮度进行测试，得到绿色有机发光二极管的发光亮度为21cd/A，红色有机发光二极管的发光亮度为12cd/A，蓝色有机发光二极管的发光亮度为7.2cd/A。
可见，在增加激子阻挡层8后，绿色有机发光二极管、红色有机发光二极管、蓝色有机发光二极管的发光效率分别提升33％、16％、5％，也就是说，通过设置激子阻挡层8，可大幅提高有机发光二极管阵列基板中的各颜色有机发光二极管的发光效率；同时，由于该激子阻挡层8是由蓝色发光层4的主体材料构成的，故其可用制备蓝色发光层4的蒸镀设备制备，这样就不必增加新设备，成本低。
实施例3
如图2所示，本实施例提供一种有机发光二极管阵列基板。
该有机发光二极管阵列基板中包括多个子像素，每个子像素中设有一个有机发光二极管；同时，子像素分为红色、绿色、蓝色三种颜色，即子像素中的有机发光二极管也分为红色、绿色、蓝色三种颜色。
例如，如图2所示，各有机发光二极管设在基底9(通常采用玻璃制作)上，在远离基底9的方向上，有机发光二极管依次包括：阳极1、空穴注入层2、空穴传输层3、激子阻挡层8、发光层4、电子传输层5、电子注入层6和阴极7。下面逐一介绍这些结构。
(1)阳极1：其由透明的氧化铟锡材料制成，厚度为15nm；且在阳极靠近基底9一侧还设有金属反射层(例如银反射层)。
之所以要设置反射层，是因为本实施例的有机发光二极管阵列基板为顶发射型，即发光层4发出的光要经反射后从阴极7射出。
(2)空穴注入层2：其由4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺(m-MTDATA，HOMO能级5.1eV，LUMO能级2.0eV)制成，厚度为70nm。
(3)空穴传输层3：其由N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺(NPB，HOMO能级5.4ev，LUMO能级2.4eV)制成，厚度为15nm。
(4)激子阻挡层8：不论对于何种颜色的有机发光二极管，其激子阻挡层8的材料都与蓝色发光层4的主体材料相同，均为1,3-N,N-二咔唑-苯(mCP，HOMO能级6.1eV，LUMO能级2.4eV，三线态能级2.9eV)。
由于本实施例的有机发光二极管阵列基板为顶发射型，故其中不同颜色的有机发光二极管中的激子阻挡层8厚度不同，以通过激子阻挡层8的厚度调整谐振腔的厚度，进而调整出射光的波长。
例如，绿色有机发光二极管中，激子阻挡层8厚度为35nm；红色有机发光二极管中，激子阻挡层8厚度为45nm；蓝色有机发光二极管中，激子阻挡层8厚度为15nm。
(5)发光层4：不同颜色的有机发光二极管中的发光层4也为相应的颜色。
绿色有机发光二极管中有绿色发光层4，其主体材料为Green Host1(HOMO能级5.39eV，LUMO能级1.95eV，三线态能级2.38eV)，客体材料为Green Dopant1(HOMO能级5.14eV，LUMO能级2.74eV，三线态能级2.36eV，掺杂质量百分比3％)，厚度为30nm。
红色发光二极管中有红色发光层4，其主体材料为Red Host1(HOMO能级5.4eV，LUMO能级2.8eV，三线态能级2.2eV)，客体材料为Red Dopant1(HOMO能级5.1eV，LUMO能级3.1eV，三线态能级2eV，掺杂质量百分比4％)，厚度为40nm。
蓝色有机发光二极管中有蓝色发光层4，其主体材料为1,3-N,N-二咔唑-苯(mCP，HOMO能级6.1eV，LUMO能级2.4eV，三线态能级2.9eV)，客体材料为Blue Dopant1(HOMO能级5.5eV，LUMO能级2.7eV，三线态能级2.7eV，掺杂质量百分比2％)，厚度为20nm。
(6)电子传输层5：其材料为双(2-甲基-8-羟基喹啉)(4-联苯氧基)铝(BAlq，HOMO能级5.9ev，LUMO能级2.9eV)，厚度20nm。
(7)电子注入层6：其材料为氟化锂(LiF)，厚度1.5nm。
(8)阴极7：其材料为镁银合金，厚度为15nm。
该阴极7厚度较小，故为透明状态，允许光经其射出，从而本实施例的有机发光二极管阵列基板为顶发射型。
在本实施例中，上述各有机发光二极管的阳极1相互独立，以使各有机发光二极管的发光亮度可被独立控制；而不同颜色有机发光二极管中的发光层4的材料不同、激子阻挡层8厚度不同，故也相互独立；而相对的，为便于制造，不同有机发光二极管的其他层可连为一体。
在最大灰阶下，对本实施例的有机发光二极管阵列基板的各颜色的有机发光二极管的发光亮度进行测试，得到绿色有机发光二极管的发光亮度为47cd/A，红色有机发光二极管的发光亮度为27cd/A，蓝色有机发光二极管的发光亮度为5.5cd/A。
相应的，在最大灰阶下，对作为对比例的有机发光二极管阵列基板(区别仅在于其中没有激子阻挡层8)的各颜色的有机发光二极管的发光亮度进行测试，得到绿色有机发光二极管的发光亮度为40cd/A，红色有机发光二极管的发光亮度为22cd/A，蓝色有机发光二极管的发光亮度为5cd/A。
可见，在增加激子阻挡层8后，绿色有机发光二极管、红色有机发光二极管、蓝色有机发光二极管的发光效率分别提升17％、22％、10％，也就是说，通过设置激子阻挡层8，可大幅提高有机发光二极管阵列基板中的各颜色有机发光二极管的发光效率；同时，由于该激子阻挡层8是由蓝色发光层 4的主体材料构成的，故其可用制备蓝色发光层4的蒸镀设备制备，这样就不必增加新设备，成本低；另外，对于顶发射型有机发光二极管阵列基板，该激子阻挡层8的制备设备(也就是蓝色发光层4的制备设备)中本就具有精细金属掩膜板，故用该制备设备即可在各颜色的有机发光二极管中形成不同厚度的激子阻挡层8，从而起到调整谐振腔厚度和出光波长的作用，而不必在空穴传输层3的制备设备中额外增加精细金属掩膜板，故其制备设备简单，成本低。
当然，上述各实施例的有机发光二极管阵列基板中还包括许多其他的结构，如用于驱动各有机发光二极管发光的驱动电路、栅极线、数据线等；由于这些结构均可采用已知的形式，故在此不再详细描述。
应当理解，以上实施例还可进行许多的变化。
例如，以上实施例均以发光层包括红色、绿色、蓝色三种作为例子，但发光层也可以具有更多的颜色(如还有黄色发光层)，但不论有多少种颜色的发光层，只要采用具有最高HOMO能级的发光层主体材料作为激子阻挡层即可，需要说明的是也可以采用具有最高HOMO能级和三线态能级的发光层主体材料作为激子阻挡层。
再如，有机发光二极管中的空穴注入层、空穴传输层、电子注入层、电子传输层主要起到改善空穴和电子传输的作用，故这些层中的一个或多个可以没有。
再如，上述各层的具体材料、厚度等都可由本领域技术人员根据需要进行改变。
实施例4
本实施例提供了一种显示装置，其包括上述任意一种有机发光二极管阵列基板，该显示装置可为OLED面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2014年7月30日递交的中国专利申请第201410370101.8号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (11)

  1. 一种有机发光二极管阵列基板，包括多个有机发光二极管，其中，所述有机发光二极管包括：
    依次设置的阳极、发光层、阴极，其中，所述发光层包括多种颜色，并且其形成材料包括主体材料和掺杂在主体材料中的客体材料；以及
    设于阳极和发光层间并接触发光层的激子阻挡层，其形成材料包括一种发光层的主体材料，该主体材料在所有发光层的主体材料中具有最大的最高占据分子轨道能级。
  2. 根据权利要求1所述的有机发光二极管阵列基板，其中，所述一种发光层的主体材料在所有发光层的主体材料中还具有最大的三线态能级。
  3. 根据权利要求1或2所述的有机发光二极管阵列基板，其中，
    所述激子阻挡层的厚度为1纳米至200纳米。
  4. 根据权利要求1-3任一所述的有机发光二极管阵列基板，其中，
    所述有机发光二极管阵列基板为顶发射型有机发光二极管阵列基板；
    与不同颜色发光层接触的激子阻挡层的厚度不同。
  5. 根据权利要求1-4任一所述的有机发光二极管阵列基板，其中，
    所述发光层包括红色发光层、绿色发光层、蓝色发光层；
    所述激子阻挡层的形成材料包括蓝色发光层的主体材料。
  6. 根据权利要求5所述的有机发光二极管阵列基板，其中，
    所述绿色发光层的主体材料与蓝色发光层的主体材料相同。
  7. 根据权利要求5或6所述的有机发光二极管阵列基板，其中，
    所述蓝色发光层的主体材料包括3-叔丁基-9,10-二(2-萘)蒽、4,4'-二(2,2-二苯乙烯基)-1,1'-联苯、4,4'-二(9-咔唑)联苯、4,4',4″-三(咔唑-9-基)三苯胺、1,3-N,N-二咔唑-苯中的任意一种。
  8. 根据权利要求5-7任一所述的有机发光二极管阵列基板，其中，
    所述蓝色发光层为荧光发光层；和/或
    所述红色发光层和绿色发光层为磷光发光层。
  9. 根据权利要求1-8中任意一项所述的有机发光二极管阵列基板，其中，所述有机发光二极管还包括：
    设于阳极与激子阻挡层之间的空穴传输层；
    设于阴极与发光层之间的电子传输层。
  10. 根据权利要求9所述的有机发光二极管阵列基板，其中，所述有机发光二极管还包括：
    设于空穴传输层与阳极之间的空穴注入层；
    设于电子传输层与阴极之间的电子注入层。
  11. 一种显示装置，包括：
    权利要求1-10中任意一项所述的有机发光二极管阵列基板。
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