WO2022042037A1 - 有机电致发光器件、显示面板及显示装置 - Google Patents

有机电致发光器件、显示面板及显示装置 Download PDF

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WO2022042037A1
WO2022042037A1 PCT/CN2021/104431 CN2021104431W WO2022042037A1 WO 2022042037 A1 WO2022042037 A1 WO 2022042037A1 CN 2021104431 W CN2021104431 W CN 2021104431W WO 2022042037 A1 WO2022042037 A1 WO 2022042037A1
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layer
electron
equal
organic electroluminescent
hole blocking
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PCT/CN2021/104431
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French (fr)
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邱丽霞
陈磊
刘杨
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京东方科技集团股份有限公司
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Priority to US17/921,318 priority Critical patent/US20230269957A1/en
Publication of WO2022042037A1 publication Critical patent/WO2022042037A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/20—Delayed fluorescence emission
    • H10K2101/25—Delayed fluorescence emission using exciplex
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to an organic electroluminescence device, a display panel and a display device.
  • OLEDs organic electroluminescent displays Due to its characteristics of active light emission, high light-emitting brightness, high resolution, wide viewing angle, fast response speed, saturated color, thin and light, low energy consumption and flexibility, it is known as a dream display and has become a hot mainstream display product on the market. .
  • an embodiment of the present disclosure provides an organic electroluminescence device, comprising: an anode and a cathode opposite to each other, an organic electroluminescence layer located between the anode and the cathode, and an organic electroluminescence layer located between the anode and the cathode.
  • An organic electroluminescence device comprising: an anode and a cathode opposite to each other, an organic electroluminescence layer located between the anode and the cathode, and an organic electroluminescence layer located between the anode and the cathode.
  • a hole blocking layer between the light-emitting layer and the cathode, and an electron transport layer between the hole blocking layer and the cathode;
  • the organic electroluminescence layer includes: an excimer complex formed by mixing an electron-type light-emitting host material and a hole-type light-emitting host material, and a light-emitting guest material doped in the excimer complex;
  • the electron mobility of the electron transport layer is greater than that of the hole blocking layer, and the electron mobility of the hole blocking layer is greater than that of the electron-type light-emitting host material.
  • the ratio of the electron mobility of the electron transport layer to the electron mobility of the hole blocking layer is greater than or equal to 10.
  • the ratio of the electron mobility of the hole blocking layer to the electron mobility of the electron-type light-emitting host material is greater than or equal to 10.
  • the electron mobility of the electron transport layer is 10 -7 cm 2 V -1 S -1 to 10 -4 cm 2 V -1 S -1 .
  • the electron mobility of the hole blocking layer is 10 -8 cm 2 V -1 S -1 to 10 -6 cm 2 V -1 S -1 .
  • the electron mobility of the electron-type light-emitting host material is 10 -9 cm 2 V -1 S -1 to 10 -7 cm 2 V - 1 S -1 .
  • the absolute value of the difference between the LUMO value of the hole blocking layer and the LUMO value of the electron transport layer is greater than or equal to 0.15 eV and less than or equal to 0.15 eV. is equal to 0.9eV;
  • the absolute value of the difference between the LUMO value of the hole blocking layer and the LUMO value of the electron-type light-emitting host material is greater than or equal to 0.01 eV and less than or equal to 0.5 eV;
  • the triplet energy level of the hole blocking layer is greater than or equal to 2.4 eV, and the triplet energy level of the electron transport layer is greater than or equal to 2.4 eV.
  • the absolute value of the difference between the HOMO value of the hole blocking layer and the HOMO value of the electron transport layer is greater than or equal to 0.01 eV and less than or equal to 0.01 eV. is equal to 0.5eV;
  • the absolute value of the difference between the HOMO value of the hole blocking layer and the HOMO value of the electron-type light-emitting host material is greater than or equal to 0.05 eV and less than or equal to 0.8 eV.
  • the energy level difference between the triplet energy level and the singlet energy level of the exciplex is less than or equal to 0.2 eV.
  • the emission spectrum peak of the hole-type light-emitting host material is greater than or equal to 350 nm and less than or equal to 460 nm;
  • the emission spectrum peak of the electron-type light-emitting host material is greater than or equal to 400 nm and less than or equal to 490 nm;
  • the emission spectrum peak of the exciplex is greater than or equal to 500 nm and less than or equal to 580 nm.
  • the mass ratio of the hole-type light-emitting host material to the electron-type light-emitting host material is 1:10-10:1.
  • the doping ratio of the light-emitting guest material in the organic electroluminescent layer is 2% to 10%.
  • the organic electroluminescent layer is a red light-emitting layer or a green light-emitting layer.
  • an embodiment of the present disclosure further provides a display panel, comprising: a plurality of sub-pixel units, at least some of the sub-pixel units include the above organic electroluminescence device.
  • the sub-pixel unit includes: a red sub-pixel unit, a green sub-pixel unit, and a blue sub-pixel unit; wherein,
  • the red sub-pixel unit and the green sub-pixel unit include the above-mentioned organic electroluminescence device, and the blue sub-pixel unit includes a blue organic electroluminescence device;
  • the organic electroluminescence layer of the blue organic electroluminescence device includes: electron-hole type light-emitting host material and blue light guest material;
  • the hole blocking layers of all the sub-pixel units are the same film layer, and the electron transport layers of all the sub-pixel units are the same film layer;
  • the absolute value of the difference between the LUMO value of the hole blocking layer and the LUMO value of the electron-hole light-emitting host material is greater than or equal to 0.2 eV and less than or equal to 0.5 eV;
  • the triplet energy level of the electron-hole light-emitting host material is less than or equal to the triplet energy level of the blue light guest material.
  • an embodiment of the present disclosure further provides a display device, comprising: the above-mentioned display panel.
  • FIG. 1 is a schematic structural diagram of an organic electroluminescence device provided in an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of an energy level relationship of an organic electroluminescent device provided in an embodiment of the present disclosure
  • FIG 3 is an emission spectrum diagram of an organic electroluminescent device provided in an embodiment of the present disclosure.
  • FIG. 4 is one of the schematic structural diagrams of the array substrate provided by the embodiment of the present disclosure.
  • FIG. 5 is the second schematic diagram of the structure of the array substrate provided by the embodiment of the present disclosure.
  • the performance of the light-emitting device mainly depends on the material properties of each film layer and the device matching structure.
  • the material direction mainly considers the material mobility, material stability, material fluorescence quantum yield (PLQY), etc.
  • the device matching structure direction mainly considers the adjacent film.
  • the main causes are the poor stability of the emissive layer (EML) material and the accumulation of electrons at the emissive layer (EML)/hole blocking layer (HBL) interface.
  • an embodiment of the present disclosure provides an organic electroluminescence device, as shown in FIG. 1 and FIG. 2 , comprising: an anode 101 and a cathode 102 opposite to each other, located at the anode 101 and the cathode 102
  • the organic electroluminescent layer 103 between, the hole blocking layer 104 between the organic electroluminescent layer 103 and the cathode 102 , and the electron transport layer 105 between the hole blocking layer 104 and the cathode 102 .
  • the organic electroluminescent layer 103 includes: an exciplex formed by mixing an electron-type light-emitting host material n-host and a hole-type light-emitting host material p-host, and a light-emitting guest material dopant doped in the exciplex exciplex.
  • the electron-type light-emitting host material n-host refers to a material with electron mobility greater than hole mobility
  • the hole-type light-emitting host material p-host refers to a material with hole mobility greater than electron mobility.
  • the electron mobility of the electron transport layer 105 is greater than that of the hole blocking layer 104 , and the electron mobility of the hole blocking layer 104 is greater than that of the electron-type light-emitting host material n-host.
  • the electron transport layer 105 by setting the electron mobility of the electron transport layer 105 to be greater than that of the hole blocking layer 104, the electron transport from the electron transport layer 105 to the empty space is increased.
  • the hole blocking layer 104 injects a potential barrier to prevent the electrons from being transported to the hole blocking layer 104 too much and too quickly; on the other hand, the electron mobility of the hole blocking layer 104 is set to be greater than that of the electron-type light-emitting host material n-host. rate, so that electrons can be easily transported from the hole blocking layer 104 to the organic electroluminescent layer 103 .
  • the combined effect of the above two aspects can effectively avoid the accumulation of electrons at the interface between the organic electroluminescent layer 103 and the hole blocking layer 104, and make the electrons move to the interior of the organic electroluminescent layer 103 better, thereby improving the Efficiency and lifetime of organic electroluminescent devices.
  • the ratio of the electron mobility of the electron transport layer 105 to the electron mobility of the hole blocking layer 104 may be set greater than or equal to 10, such as 10, 100, etc.
  • the electrons in the hole blocking layer 104 may be made to migrate.
  • the ratio of the rate to the electron mobility of the electron-type light-emitting host material n-host is greater than or equal to 10.
  • the electron mobility of the electron transport layer 105 of the organic electroluminescent device provided in the embodiment of the present disclosure is 10 -7 cm 2 V -1 S -1 to 10 -4 cm 2 V -1 S -1 ,
  • 10 -7 cm 2 V -1 S -1 , 10 -6 cm 2 V -1 S -1 , 10 -5 cm 2 V -1 S -1 , 10 -4 cm 2 V -1 S -1 and the like.
  • the electron mobility of the hole blocking layer 104 is 10 -8 cm 2 V -1 S -1 to 10 -6 cm 2 V -1 S -1 , for example, 10 -8 cm 2 V -1 S -1 , 10 -7 cm 2 V -1 S -1 , 10 -6 cm 2 V -1 S -1 , etc.
  • the electron mobility of the electron-type light-emitting host material n-host is 10 -9 cm 2 V -1 S -1 to 10 -7 cm 2 V -1 S -1 , for example, 10 -9 cm 2 V -1 S -1 , 10 -8 cm 2 V -1 S -1 , 10 -7 cm 2 V -1 S -1 , etc.
  • the difference between the LUMO value (HBL LUMO ) of the hole blocking layer 104 and the LUMO (ETL LUMO ) value of the electron transport layer 105 is The absolute value ⁇ E 1 of the difference is greater than or equal to 0.15 eV and less than or equal to 0.9 eV.
  • the absolute value ⁇ E 2 of the difference between the LUMO value (HBL LUMO ) of the hole blocking layer 104 and the LUMO value (n-host LUMO ) of the electron-type light-emitting host material n-host is greater than or equal to 0.01 eV and less than or is equal to 0.5eV.
  • the triplet energy level T1 HBL of the hole blocking layer 104 is greater than or equal to 2.4 eV, and the triplet energy level T1 ETL of the electron transport layer 105 is greater than or equal to 2.4 eV.
  • the above energy level relationship not only helps to control the injection rate of electrons from the electron transport layer 105 to the hole blocking layer 104, but also facilitates the transport of electrons on the electron-type light-emitting host material n-host, so that the electrons are effectively confined to the organic electrons.
  • exciton emission is formed by recombination with holes, and the exciton recombination region moves toward the center of the organic electroluminescent layer 103 .
  • the difference between the HOMO value (HBL HOMO ) of the hole blocking layer 104 and the HOMO (ETL HOMO ) value of the electron transport layer 105 The absolute value of the difference ⁇ E 3 is greater than or equal to 0.01eV and less than or equal to 0.5eV;
  • the absolute value ⁇ E 4 of the difference between the HOMO value (HBL HOMO ) of the hole blocking layer 104 and the HOMO value (n-host HOMO ) of the electron-type light-emitting host material is greater than or equal to 0.05 eV and less than or equal to 0.8 eV.
  • the HOMO energy level relationship does not hinder the hole blocking effect of the hole blocking layer 104, so that the holes can effectively recombine with the holes in the organic electroluminescent layer 103 to form exciton emission.
  • the energy level difference ⁇ EST between the triplet energy level T1 exciplex of the exciplex exciplex and the singlet state energy level S1 exciplex is less than or equal to 0.2 eV, that is,
  • the exciplex has thermally activated delay properties (TADF) and has high luminous efficiency.
  • the emission spectrum peak (PL peak) of the hole-type light-emitting host material p-host is greater than or equal to 350 nm and less than or equal to 350 nm. 460nm.
  • the emission spectrum peak (PL peak) of the electron-type light-emitting host material n-host is greater than or equal to 400 nm and less than or equal to 490 nm.
  • the exciplex has an emission spectral peak (PL peak) greater than or equal to 500 nm and less than or equal to 580 nm.
  • PL peak emission spectral peak
  • the host material of the red light-emitting layer is an electron-hole type single host (single) system, and the efficiency of the system can no longer meet the current demand for mass production.
  • the light emitting device provided by the present disclosure may have higher efficiency and lifetime.
  • the organic electroluminescent layer 103 in the present disclosure may be a red light-emitting layer or a green light-emitting layer.
  • the green organic electroluminescent device and the red organic electroluminescent device adopt the device structure provided by the present disclosure, the overall performance of the panel can be better improved.
  • the mass ratio of the hole-type light-emitting host material p-host to the electron-type light-emitting host material n-host is 1:10-10:1, for example 1:10, 10:10, 10:1, etc.
  • the hole-type light-emitting host material p-host and the electron-type light-emitting host material n-host satisfying the above mass ratio can better capture the electrons at the interface between the hole blocking layer 104 and the organic electroluminescent layer 103, and transport the electrons to Inside the organic electroluminescent layer 103 , the recombination with holes is realized in the organic electroluminescent layer 103 to generate excitons, so that the recombination region of the excitons is far away from the interface between the hole blocking layer 104 and the organic electroluminescent layer 103 .
  • the doping ratio of the light-emitting guest material in the organic electroluminescent layer is 2% to 10%, such as 2%, 3%, 4%, 5% %, 6%, 7%, 8%, 9%, 10%, etc.
  • the doping ratio enables the light-emitting host materials (including the hole-type light-emitting host material p-host and the electron-type light-emitting host material n-host) to effectively transfer exciton energy to the light-emitting guest material dopant to excite the light-emitting guest material to emit light
  • the light-emitting host materials including the hole-type light-emitting host material p-host and the electron-type light-emitting host material n-host
  • the organic electroluminescence device may further include: an electron blocking layer 106 located between the anode 101 and the organic electroluminescence layer 103 , an electron blocking layer 106 located between the anode 101 and the organic electroluminescence layer 103 .
  • a hole transport layer 107 between the blocking layer 106 and the anode 101 and a hole injection layer 108 between the hole transport layer 107 and the anode 101 .
  • an electron injection layer between the cathode 102 and the electron transport layer 105 may also be included.
  • the electron transport layer 105 may be an electron transport material such as nitrogen-containing heterocyclic compounds (eg Bphen, TPBi) and lithium octahydroxyquinolate (LiQ )mixture.
  • the material of the hole blocking layer 104 may be a triazine compound or BAlq or the like.
  • the hole-type light-emitting host material p-host may be TCP, CBP, mCP, or the like.
  • the electron-type light-emitting host material n-host may be a nitrogen-containing heterocyclic compound or a cyano group-containing aromatic heterocyclic compound or the like.
  • the red light-emitting guest material may be an organometallic complex, preferably an iridium metal complex and a platinum metal complex, such as Ir(ppy) 2 (acac), Ir(ppy) 3 and the like.
  • the electron blocking layer 106 may be an aromatic amine compound.
  • the hole transport layer 107 may be an aromatic amine compound such as NPB and TPD.
  • the hole injection layer 108 can be a single-component film layer such as HATCN, CuPc, MoO 3 , etc., or a doped film layer such as an axene or a quinone compound doped with an arylamine compound, specifically F 4 TCNQ doped NPB or TPD.
  • red organic electroluminescent device As an example. Specifically, the following methods can be used to make a red organic electroluminescent device:
  • the first step forming a pixel driving circuit on the substrate 401, and the anode 101 electrically connected to the pixel driving circuit, as shown in FIG. 4; specifically, the pixel driving circuit includes a plurality of transistors and at least one storage capacitor, as shown in FIG. 4 Drive transistor 402 is shown electrically connected to anode 101 .
  • a gate insulating layer 403 an interlayer dielectric layer 404 , a planarization layer 405 and a pixel defining layer 406 may also be included.
  • the second step using a metal mask (Open mask), sequentially vapor-deposited on the layer where the anode 101 is located to form a hole injection layer 108 with a thickness of 5 nm to 20 nm and a hole transport layer 107 with a thickness of 80 nm to 120 nm.
  • a metal mask Open mask
  • the third step using a fine metal mask (FMM), on the hole transport layer 107, an electron blocking layer 106 with a thickness of 20 nm to 100 nm and a red emitting organic electroluminescence with a thickness of 20 nm to 70 nm are sequentially evaporated Layer 103, wherein the doping mass ratio of the red light-emitting guest material in the organic electroluminescent layer 103 is 2% to 10%, and the mass ratio of the hole-type light-emitting host material p-host to the electron-type light-emitting host material n-host is 1:10 to 10:1, or the light-emitting host material of the organic electroluminescent layer 103 is an electron-hole type single host material (Single).
  • FMM fine metal mask
  • the fourth step using a metal mask (Open mask), sequentially vapor-deposited on the organic electroluminescent layer 103 to form a hole blocking layer 104 with a thickness of 5 nm to 20 nm and an electron transport layer 105 with a thickness of 20 nm to 50 nm.
  • a metal mask Open mask
  • the fifth step using an open mask, the cathode 102 of metal material is formed by vapor deposition on the electron transport layer 105 .
  • one comparative example and three examples are produced by the above-mentioned manufacturing method in the present disclosure, wherein the hole injection layer, hole transport layer, electron blocking layer and hole blocking layer in the comparative example and each example are
  • the materials of the electron transport layer and the cathode are the same, and the specific electron transport layer is composed of an electron transport material with a mass ratio of 5:5 and lithium octahydroxyquinolate; the difference is only in the organic electroluminescence layer.
  • Table 1 The detailed parameters are shown in Table 1:
  • an embodiment of the present disclosure further provides a display panel, comprising: a plurality of sub-pixel units, at least some of the sub-pixel units include the above organic electroluminescent device. Since the principle of solving the problem of the display panel is similar to the principle of solving the problem of the organic electroluminescent device, the implementation of the display panel can refer to the above-mentioned embodiments of the organic electroluminescent device, and the repetition will not be repeated.
  • the sub-pixel unit includes: a red sub-pixel unit R, a green sub-pixel unit G, and a blue sub-pixel unit B; wherein,
  • the red sub-pixel unit R and the green sub-pixel unit G include the above-mentioned organic electroluminescence devices, and the blue sub-pixel unit B includes a blue organic electroluminescence device;
  • the organic electroluminescent layer of the blue organic electroluminescent device includes: electron-hole light-emitting host material (BH) and blue guest material (BD);
  • the hole injection layers 108 of all sub-pixel units are the same film layer
  • the hole transport layers 107 of all sub-pixel units are the same film layer
  • the hole blocking layers 104 of all sub-pixel units are the same film layer
  • the The electron injection layer 109 is the same film layer
  • the electron transport layer 105 of all sub-pixel units is the same film layer
  • the electron blocking layer and the organic electroluminescence layer of each sub-pixel unit are independent of each other, 1061 in FIG.
  • the absolute value of the difference between the LUMO value (HBL LUMO ) of the hole blocking layer and the LUMO value (BH LUMO ) of the electron-hole light-emitting host material is greater than or equal to 0.2 eV and less than or equal to 0.5 eV;
  • the triplet energy level T1 BH of the electron-hole type light-emitting host material (BH) is less than or equal to the triplet energy level T1 BD of the blue light guest material (BD).
  • the blue organic electroluminescent device satisfying the above energy level relationship combined with the red organic electroluminescent device and the green organic electroluminescent device adopting the device structure provided by the present disclosure, can achieve a better white balance effect.
  • an embodiment of the present disclosure further provides a display device, including the above-mentioned display panel provided by an embodiment of the present disclosure, and the display device may be: a mobile phone, a tablet computer, a TV, a monitor, a notebook computer, a digital photo frame, Navigators, smart watches, fitness wristbands, personal digital assistants, and any other product or component that has a display function.
  • the display device may be: a mobile phone, a tablet computer, a TV, a monitor, a notebook computer, a digital photo frame, Navigators, smart watches, fitness wristbands, personal digital assistants, and any other product or component that has a display function.
  • Other essential components of the display device should be understood by those of ordinary skill in the art, and will not be described in detail here, nor should it be regarded as a limitation of the present disclosure.
  • the implementation of the display device may refer to the above-mentioned embodiment of the display panel, and the repetition will not be repeated.
  • the above-mentioned organic electroluminescent device, display panel and display device include: an anode and a cathode opposite to each other, an organic electroluminescent layer located between the anode and the cathode, and an organic electroluminescent layer located between the organic electroluminescent layer and the cathode A hole blocking layer between the holes, and an electron transport layer located between the hole blocking layer and the cathode; wherein, the organic electroluminescence layer includes: an excimer formed by mixing an electron-type light-emitting host material and a hole-type light-emitting host material A composite, and a light-emitting guest material doped in an exciplex; wherein the electron mobility of the electron transport layer is greater than that of the hole blocking layer, and the electron mobility of the hole blocking layer is greater than that of the electron-type light-emitting host The electron mobility of the material.
  • the electron transport from the electron transport layer to the hole blocking layer is increased.
  • the injection barrier prevents the electrons from being transported to the hole blocking layer too much and too quickly; on the other hand, the electron mobility of the hole blocking layer is set to be greater than that of the electron-type light-emitting host material, so that the electrons can easily self-empty The hole blocking layer is transported to the organic electroluminescent layer.
  • the combined effect of the above two aspects can effectively avoid the accumulation of electrons at the interface between the organic electroluminescent layer and the hole blocking layer, and make the electrons move to the interior of the organic electroluminescent layer better, thereby improving the organic electroluminescent layer.

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Abstract

本公开提供了一种有机电致发光器件、显示面板及显示装置，包括：相对而置的阳极和阴极，位于阳极和阴极之间的有机电致发光层，位于有机电致发光层与阴极之间的空穴阻挡层，以及位于空穴阻挡层与阴极之间的电子传输层；其中，有机电致发光层包括：由电子型发光主体材料和空穴型发光主体材料混合形成的激基复合物，以及在激基复合物中掺杂的发光客体材料；电子传输层的电子迁移率大于空穴阻挡层的电子迁移率，且空穴阻挡层的电子迁移率大于电子型发光主体材料的电子迁移率。

Description

有机电致发光器件、显示面板及显示装置
相关申请的交叉引用
本申请要求在2020年08月28日提交中国专利局、申请号为202010887673.9、申请名称为“有机电致发光器件、显示面板及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，尤其涉及一种有机电致发光器件、显示面板及显示装置。
背景技术
近年来，有机电致发光显示器(OLED)作为一种新型的平板显示逐渐受到更多的关注。由于其具有主动发光、发光亮度高、分辨率高、宽视角、响应速度快、色彩饱和、轻薄、低能耗以及可柔性化等特点，被誉为梦幻显示，成为目前市场上炙手可热的主流显示产品。
发明内容
一方面，本公开实施例提供了一种有机电致发光器件，包括：相对而置的阳极和阴极，位于所述阳极和所述阴极之间的有机电致发光层，位于所述有机电致发光层与所述阴极之间的空穴阻挡层，以及位于所述空穴阻挡层与所述阴极之间的电子传输层；其中，
所述有机电致发光层包括：由电子型发光主体材料和空穴型发光主体材料混合形成的激基复合物，以及在所述激基复合物中掺杂的发光客体材料；
所述电子传输层的电子迁移率大于所述空穴阻挡层的电子迁移率，且所述空穴阻挡层的电子迁移率大于所述电子型发光主体材料的电子迁移率。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述电子传输层的电子迁移率与所述空穴阻挡层的电子迁移率之比大于或等于10。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴阻挡层的电子迁移率与所述电子型发光主体材料的电子迁移率之比大于或等于10。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述电子传输层的电子迁移率为10 -7cm 2V -1S -1～10 -4cm 2V -1S -1。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴阻挡层的电子迁移率为10 -8cm 2V -1S -1～10 -6cm 2V -1S -1。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述电子型发光主体材料的电子迁移率为10 -9cm 2V -1S -1～10 -7cm 2V -1S -1。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴阻挡层的LUMO值与所述电子传输层的LUMO值之差的绝对值大于或等于0.15eV且小于或等于0.9eV；
所述空穴阻挡层的LUMO值与所述电子型发光主体材料的LUMO值之差的绝对值大于或等于0.01eV且小于或等于0.5eV；
所述空穴阻挡层的三线态能级大于或等于2.4eV，所述电子传输层的三线态能级大于或等于2.4eV。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴阻挡层的HOMO值与所述电子传输层的HOMO值之差的绝对值大于或等于0.01eV且小于或等于0.5eV；
所述空穴阻挡层的HOMO值与所述电子型发光主体材料的HOMO值之差的绝对值大于或等于0.05eV且小于或等于0.8eV。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述激基复合物的三线态能级与单线态能级的能级差小于或等于0.2eV。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴型发光主体材料的发射光谱峰值大于或等于350nm且小于或等于460nm；
所述电子型发光主体材料的发射光谱峰值大于或等于400nm且小于或等于490nm；
所述激基复合物的发射光谱峰值大于或等于500nm且小于或等于580nm。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述空穴型发光主体材料与所述电子型发光主体材料的质量比为1:10～10:1。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述发光客体材料在所述有机电致发光层中掺杂比例为2％～10％。
可选地，在本公开实施例提供的上述有机电致发光器件中，所述有机电致发光层为红色发光层或绿色发光层。
另一方面，本公开实施例还提供了一种显示面板，包括：多个子像素单元，至少部分所述子像素单元包括上述有机电致发光器件。
可选地，在本公开实施例提供的上述显示面板中，所述子像素单元包括：红色子像素单元、绿色子像素单元和蓝色子像素单元；其中，
所述红色子像素单元和所述绿色子像素单元包括上述有机电致发光器件，所述蓝色子像素单元包括蓝色有机电致发光器件；
所述蓝色有机电致发光器件的有机电致发光层包括：电子-空穴型发光主体材料和蓝光客体材料；
全部所述子像素单元的空穴阻挡层为同一膜层，且全部所述子像素单元的电子传输层为同一膜层；
所述空穴阻挡层的LUMO值与所述电子-空穴型发光主体材料的LUMO值之差的绝对值大于或等于0.2eV且小于或等于0.5eV；
所述电子-空穴型发光主体材料的三线态能级小于或等于所述蓝光客体材料的三线态能级。
另一方面，本公开实施例还提供了一种显示装置，包括：上述显示面板。
附图说明
图1为本公开实施例提供的有机电致发光器件的结构示意图；
图2为本公开实施例提供的有机电致发光器件的能级关系示意图；
图3为本公开实施例提供的有机电致发光器件的发射光谱图；
图4为本公开实施例提供的阵列基板的结构示意图之一；
图5为本公开实施例提供的阵列基板的结构示意图之二。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。需要注意的是，附图中各图形的尺寸和形状不反映真实比例，目的只是示意说明本公开内容。并且自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其它实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“内”、“外”、“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
随着OLED产品不断的发展，对于OLED产品的效率和寿命等性能的要求越来越高。发光器件的性能主要取决于各膜层的材料本身性能和器件搭配结构，材料方向主要考虑材料迁移率、材料稳定性、材料荧光量子产率(PLQY)等，器件搭配结构方向主要考虑相邻膜层的能级匹配、激子分布情况、电子和空穴注入和堆积情况等。对于器件效率和寿命较低的问题，目前认为主要 诱因在于发光层(EML)材料稳定性较差和电子在发光层(EML)/空穴阻挡层(HBL)界面堆积。
针对相关技术中存在的上述问题，本公开实施例提供了一种有机电致发光器件，如图1和图2所示，包括：相对而置的阳极101和阴极102，位于阳极101和阴极102之间的有机电致发光层103，位于有机电致发光层103与阴极102之间的空穴阻挡层104，以及位于空穴阻挡层104与阴极102之间的电子传输层105。
其中，
有机电致发光层103包括：由电子型发光主体材料n-host和空穴型发光主体材料p-host混合形成的exciplex，以及在激基复合物exciplex中掺杂的发光客体材料dopant。
需要说明的是，电子型发光主体材料n-host指的是电子迁移率大于空穴迁移率的材料；空穴型发光主体材料p-host指的是空穴迁移率大于电子迁移率的材料。
电子传输层105的电子迁移率大于空穴阻挡层104的电子迁移率，且空穴阻挡层104的电子迁移率大于电子型发光主体材料n-host的电子迁移率。
在本公开实施例提供的上述有机电致发光器件中，一方面通过设置电子传输层105的电子迁移率大于空穴阻挡层104的电子迁移率，增大了电子自电子传输层105传输至空穴阻挡层104注入势垒，避免了电子过多、过快地传输至空穴阻挡层104；另一方面设置空穴阻挡层104的电子迁移率大于电子型发光主体材料n-host的电子迁移率，使得电子可以很容易自空穴阻挡层104传输至有机电致发光层103。以上两方面的综合作用，有效避免了电子在有机电致发光层103与空穴阻挡层104的界面处堆积，并使电子更好地向有机电致发光层103的内部移动，由此提高了有机电致发光器件的效率和寿命。
可选地，在本公开实施例提供的上述有机电致发光器件中，为有效控制电子的传输速率，可以设置电子传输层105的电子迁移率与空穴阻挡层104的电子迁移率之比大于或等于10，例如10、100等。
可选地，在本公开实施例提供的上述有机电致发光器件中，为增大电子在有机电致发光层103中与空穴形成激子的概率，可以使得空穴阻挡层104的电子迁移率与电子型发光主体材料n-host的电子迁移率之比大于或等于10。
可选地，在本公开实施例提供的上述有机电致发光器件电子传输层105的电子迁移率为10 -7cm 2V -1S -1～10 -4cm 2V -1S -1，例如10 -7cm 2V -1S -1、10 -6cm 2V -1S -1、10 -5cm 2V -1S -1、10 -4cm 2V -1S -1等。空穴阻挡层104的电子迁移率为10 -8cm 2V -1S -1～10 -6cm 2V -1S -1，例如10 -8cm 2V -1S -1、10 -7cm 2V -1S -1、10 -6cm 2V -1S -1等。电子型发光主体材料n-host的电子迁移率为10 -9cm 2V -1S -1～10 -7cm 2V -1S -1，例如10 -9cm 2V -1S -1、10 -8cm 2V -1S -1、10 -7cm 2V -1S -1等。
可选地，在本公开实施例提供的上述有机电致发光器件中，如图2所示，空穴阻挡层104的LUMO值(HBL LUMO)与电子传输层105的LUMO(ETL LUMO)值之差的绝对值△E 1大于或等于0.15eV且小于或等于0.9eV。
可选地，空穴阻挡层104的LUMO值(HBL LUMO)与电子型发光主体材料n-host的LUMO值(n-host LUMO)之差的绝对值△E 2大于或等于0.01eV且小于或等于0.5eV。
可选地，空穴阻挡层104的三线态能级T1 HBL大于或等于2.4eV，电子传输层105的三线态能级T1 ETL大于或等于2.4eV。
上述能级关系既有助于控制电子自电子传输层105向空穴阻挡层104的注入速率，又利于电子在电子型发光主体材料n-host上的传输，从而使得电子被有效限制在有机电致发光层103中与空穴复合形成激子发光，而且激子复合区域向有机电致发光层103的中心移动。
可选地，在本公开实施例提供的上述有机电致发光器件中，如图2所示，空穴阻挡层104的HOMO值(HBL HOMO)与电子传输层105的HOMO(ETL HOMO)值之差的绝对值△E 3大于或等于0.01eV且小于或等于0.5eV；
空穴阻挡层104的HOMO值(HBL HOMO)与电子型发光主体材料的HOMO值(n-host HOMO)之差的绝对值△E 4大于或等于0.05eV且小于或等于0.8eV。
该HOMO能级关系不会妨碍空穴阻挡层104的空穴阻挡作用，使得空穴 可以有效在有机电致发光层103中与空穴复合形成激子发光。
可选地，在本公开实施例提供的上述有机电致发光器件中，激基复合物exciplex的三线态能级T1 exciplex与单线态能级S1 exciplex的能级差△EST小于或等于0.2eV，即该激基复合物exciplex具有热活化延迟性质(TADF)，发光效率较高。
可选地，在本公开实施例提供的上述有机电致发光器件中，如图3所示，空穴型发光主体材料p-host的发射光谱峰值(PL peak)大于或等于350nm且小于或等于460nm。
可选地，电子型发光主体材料n-host的发射光谱峰值(PL peak)大于或等于400nm且小于或等于490nm。
可选地，激基复合物exciplex的发射光谱峰值(PL peak)大于或等于500nm且小于或等于580nm。
相关技术中，红色发光层(R_EML)的主体材料使用的为电子-空穴型单主体(single)体系，该体系效率已不能满足目前量产需求。而本公开提供的发光器件可以具有较高的效率和寿命。并且由上述发射光谱可知，本公开适用于红光磷光体系和绿光磷光体系。也就是说，本公开中的有机电致发光层103可以为红色发光层或绿色发光层。另外，在绿色有机电致发光器件和红色有机电致发光器件采用本公开提供的器件结构的情况下，可较好地改善面板的整体性能。
可选地，在本公开实施例提供的上述有机电致发光器件中，空穴型发光主体材料p-host与电子型发光主体材料n-host的质量比为1:10～10:1，例如1:10、10:10、10:1等。满足上述质量比的空穴型发光主体材料p-host与电子型发光主体材料n-host可更好的捕获空穴阻挡层104与有机电致发光层103界面处的电子，并将电子传输至有机电致发光层103内部，以在有机电致发光层103内部实现与空穴的复合生成激子，使得激子复合区域远离空穴阻挡层104与有机电致发光层103界面。
可选地，在本公开实施例提供的上述有机电致发光器件中，发光客体材 料在有机电致发光层中掺杂比例为2％～10％，例如2％、3％、4％、5％、6％、7％、8％、9％、10％等。一方面该掺杂比例使得发光主体材料(包括空穴型发光主体材料p-host和电子型发光主体材料n-host)可将激子能量有效转移给发光客体材料dopant来激发发光客体材料发光，另一方面发光主体材料(包括空穴型发光主体材料p-host和电子型发光主体材料n-host)对发光客体材料进行了“稀释”，有效改善了发光客体材料分子间相互碰撞、以及能量间相互碰撞引起的荧光淬灭，提高了发光效率和器件寿命。
可选地，在本公开实施例提供的上述有机电致发光器件中，如图1所示，一般还可以包括：位于阳极101与有机电致发光层103之间的电子阻挡层106，位于电子阻挡层106与阳极101之间的空穴传输层107，以及位于空穴传输层107与阳极101之间的空穴注入层108。另外，在一些实施例中，还可以包括位于阴极102与电子传输层105之间的电子注入层。
可选地，在本公开实施例提供的上述有机电致发光器件中，电子传输层105可以为含氮杂环类化合物(如Bphen、TPBi)等电子传输型材料与八羟基喹啉锂(LiQ)的混合物。空穴阻挡层104的材料可以为三嗪类化合物或BAlq等。可选地，空穴型发光主体材料p-host可以为TCP、CBP、mCP等。可选地，电子型发光主体材料n-host可以为含氮杂环类化合物或含氰基芳杂环化合物等。可选地，红色发光客体材料可以为有机金属配合物，优选铱金属配合物和铂金属配合物，例如Ir(ppy) 2(acac)、Ir(ppy) 3等。可选地，电子阻挡层106的可以为芳胺类化合物。可选地，空穴传输层107可以为芳胺类化合物如NPB和TPD等。可选地，空穴注入层108可为单组份膜层如HATCN、CuPc、MoO 3等，也可为掺杂膜层如轴烯类或醌类化合物掺杂芳胺化合物，具体可为F 4TCNQ掺杂NPB或TPD。其中Bphen、TPBi、LiQ、BAlq、TCP、CBP、mCP、Ir(ppy) 3、Ir(ppy) 2(acac)、NPB、TPD、HATCN、CuPc和F4TCNQ的结构式如下：
Figure PCTCN2021104431-appb-000001
另外，下文以制作红色有机电致发光器件为例对本公开的器件寿命和效率进行说明。具体可采用以下方法来制作红色有机电致发光器件：
第一步：在基底401上形成像素驱动电路，以及与像素驱动电路电连接的阳极101，如图4所示；具体地，像素驱动电路包括多个晶体管和至少一个存储电容，图4中具体示出了与阳极101电连接的驱动晶体管402。一般地，如图4所示，还可以包括栅绝缘层403、层间介质层404、平坦层405和像素界定层406。
第二步：使用金属掩膜版(Open mask)，在阳极101所在层上依次蒸镀形成5nm～20nm厚的空穴注入层108，以及80nm～120nm厚的空穴传输层107。
第三步：使用精细金属掩膜板(FMM)，在空穴传输层107上依次蒸镀厚度为20nm～100nm的电子阻挡层106，以及厚度为20nm～70nm的发红光的有机电致发光层103，其中红色发光客体材料在有机电致发光层103中的掺杂质量比为2％～10％，空穴型发光主体材料p-host与电子型发光主体材料n-host的质量比为1:10～10:1，或者有机电致发光层103的发光主体材料为电子-空穴型单主体材料(Single)。
第四步：使用金属掩膜版(Open mask)，在有机电致发光层103上依次蒸镀形成5nm～20nm厚的空穴阻挡层104和20nm～50nm厚的电子传输层105。
第五步：使用金属掩膜版(Open mask)，在电子传输层105上蒸镀形成金属材质的阴极102。
具体地，在本公开中采用上述制作方法制作了一个对比例和三个实施例，其中，对比例与各实施例中的空穴注入层、空穴传输层、电子阻挡层、空穴阻挡层、电子传输层和阴极的材料相同，具体的电子传输层由质量比为5:5的电子传输型材料与八羟基喹啉锂构成；不同之处仅在于有机电致发光层。详细参数如表1所示：
表1
Figure PCTCN2021104431-appb-000002
Figure PCTCN2021104431-appb-000003
上述对比例和实施例1～3的器件性能数据如表2所示：
表2
  对比例 实施例1 实施例2 实施例3
电压 100％ 94％ 95％ 97％
效率 100％ 140％ 155％ 148％
寿命 100％ 150％ 200％ 180％
由表2可见，本公开所提供的实施例1～3的器件效率和寿命都有很大提高。
基于同一发明构思，本公开实施例还提供了一种显示面板，包括：多个子像素单元，至少部分子像素单元包括上述有机电致发光器件。由于该显示面板解决问题的原理与上述有机电致发光器件解决问题的原理相似，因此，该显示面板的实施可以参见上述有机电致发光器件的实施例，重复之处不再赘述。
可选地，在本公开实施例提供的上述显示面板中，如图5所示，子像素单元包括：红色子像素单元R、绿色子像素单元G和蓝色子像素单元B；其中，
红色子像素单元R和绿色子像素单元G包括上述有机电致发光器件，蓝色子像素单元B包括蓝色有机电致发光器件；
蓝色有机电致发光器件的有机电致发光层包括：电子-空穴型发光主体材料(BH)和蓝光客体材料(BD)；
全部子像素单元的空穴注入层108为同一膜层，全部子像素单元的空穴传输层107为同一膜层，全部子像素单元的空穴阻挡层104为同一膜层，全部子像素单元的电子注入层109为同一膜层，全部子像素单元的电子传输层 105为同一膜层，每个子像素单元的电子阻挡层和有机电致发光层相互独立，图5中1061表示红色子像素单元R的电子阻挡层，1062表示绿色子像素单元G的电子阻挡层，1063表示绿色子像素单元B的电子阻挡层；1031表示红色子像素单元R的有机电致发光层，1032表示绿色子像素单元G的有机电致发光层，1033表示绿色子像素单元B的有机电致发光层。
其中空穴阻挡层的LUMO值(HBL LUMO)与电子-空穴型发光主体材料的LUMO值(BH LUMO)之差的绝对值大于或等于0.2eV且小于或等于0.5eV；
电子-空穴型发光主体材料(BH)的三线态能级T1 BH小于或等于蓝光客体材料(BD)的三线态能级T1 BD。
满足上述能级关系的蓝色有机电致发光器件，结合采用本公开所提供器件结构的红色有机电致发光器件和绿色有机电致发光器件，可以实现较好的白平衡效果。
基于同一发明构思，本公开实施例还提供了一种显示装置，包括本公开实施例提供的上述显示面板，该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪、智能手表、健身腕带、个人数字助理等任何具有显示功能的产品或部件。对于显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本公开的限制。另外，由于该显示装置解决问题的原理与上述显示面板解决问题的原理相似，因此，该显示装置的实施可以参见上述显示面板的实施例，重复之处不再赘述。
本公开实施例提供的上述有机电致发光器件、显示面板及显示装置，包括：相对而置的阳极和阴极，位于阳极和阴极之间的有机电致发光层，位于有机电致发光层与阴极之间的空穴阻挡层，以及位于空穴阻挡层与阴极之间的电子传输层；其中，有机电致发光层包括：由电子型发光主体材料和空穴型发光主体材料混合形成的激基复合物，以及在激基复合物中掺杂的发光客体材料；其中，电子传输层的电子迁移率大于空穴阻挡层的电子迁移率，且空穴阻挡层的电子迁移率大于电子型发光主体材料的电子迁移率。在本公开 实施例提供的上述有机电致发光器件中，一方面通过设置电子传输层的电子迁移率大于空穴阻挡层的电子迁移率，增大了电子自电子传输层传输至空穴阻挡层注入势垒，避免了电子过多、过快地传输至空穴阻挡层；另一方面设置空穴阻挡层的电子迁移率大于电子型发光主体材料的电子迁移率，使得电子可以很容易自空穴阻挡层传输至有机电致发光层。以上两方面的综合作用，有效避免了电子在有机电致发光层与空穴阻挡层的界面处堆积，并使电子更好地向有机电致发光层的内部移动，由此提高了有机电致发光器件的效率和寿命。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开实施例的精神和范围。这样，倘若本公开实施例的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (16)

  1. 一种有机电致发光器件，其中，包括：相对而置的阳极和阴极，位于所述阳极和所述阴极之间的有机电致发光层，位于所述有机电致发光层与所述阴极之间的空穴阻挡层，以及位于所述空穴阻挡层与所述阴极之间的电子传输层；其中，
    所述有机电致发光层包括：由电子型发光主体材料和空穴型发光主体材料混合形成的激基复合物，以及在所述激基复合物中掺杂的发光客体材料；
    所述电子传输层的电子迁移率大于所述空穴阻挡层的电子迁移率，且所述空穴阻挡层的电子迁移率大于所述电子型发光主体材料的电子迁移率。
  2. 如权利要求1所述的有机电致发光器件，其中，所述电子传输层的电子迁移率与所述空穴阻挡层的电子迁移率之比大于或等于10。
  3. 如权利要求1所述的有机电致发光器件，其中，所述空穴阻挡层的电子迁移率与所述电子型发光主体材料的电子迁移率之比大于或等于10。
  4. 如权利要求1所述的有机电致发光器件，其中，所述电子传输层的电子迁移率为10 -7cm 2V -1S -1～10 -4cm 2V -1S -1。
  5. 如权利要求1所述的有机电致发光器件，其中，所述空穴阻挡层的电子迁移率为10 -8cm 2V -1S -1～10 -6cm 2V -1S -1。
  6. 如权利要求1所述的有机电致发光器件，其中，所述电子型发光主体材料的电子迁移率为10 -9cm 2V -1S -1～10 -7cm 2V -1S -1。
  7. 如权利要求1所述的有机电致发光器件，其中，所述空穴阻挡层的LUMO值与所述电子传输层的LUMO值之差的绝对值大于或等于0.15eV且小于或等于0.9eV；
    所述空穴阻挡层的LUMO值与所述电子型发光主体材料的LUMO值之差的绝对值大于或等于0.01eV且小于或等于0.5eV；
    所述空穴阻挡层的三线态能级大于或等于2.4eV，所述电子传输层的三线态能级大于或等于2.4eV。
  8. 如权利要求1所述的有机电致发光器件，其中，所述空穴阻挡层的HOMO值与所述电子传输层的HOMO值之差的绝对值大于或等于0.01eV且小于或等于0.5eV；
    所述空穴阻挡层的HOMO值与所述电子型发光主体材料的HOMO值之差的绝对值大于或等于0.05eV且小于或等于0.8eV。
  9. 如权利要求1所述的有机电致发光器件，其中，所述激基复合物的三线态能级与单线态能级的能级差小于或等于0.2eV。
  10. 如权利要求1所述的有机电致发光器件，其中，所述空穴型发光主体材料的发射光谱峰值大于或等于350nm且小于或等于460nm；
    所述电子型发光主体材料的发射光谱峰值大于或等于400nm且小于或等于490nm；
    所述激基复合物的发射光谱峰值大于或等于500nm且小于或等于580nm。
  11. 如权利要求1所述的有机电致发光器件，其中，所述空穴型发光主体材料与所述电子型发光主体材料的质量比为1:10～10:1。
  12. 如权利要求11所述的有机电致发光器件，其中，所述发光客体材料在所述有机电致发光层中掺杂比例为2％～10％。
  13. 如权利要求1～12任一项所述的有机电致发光器件，其中，所述有机电致发光层为红色发光层或绿色发光层。
  14. 一种显示面板，其中，包括：多个子像素单元，至少部分所述子像素单元包括如权利要求1～13任一项所述的有机电致发光器件。
  15. 如权利要求14所述的显示面板，其中，所述子像素单元包括：红色子像素单元、绿色子像素单元和蓝色子像素单元；其中，
    所述红色子像素单元和所述绿色子像素单元包括如权利要求1～13任一项所述的有机电致发光器件，所述蓝色子像素单元包括蓝色有机电致发光器件；
    所述蓝色有机电致发光器件的有机电致发光层包括：电子-空穴型发光主体材料和蓝光客体材料；
    全部所述子像素单元的空穴阻挡层为同一膜层，且全部所述子像素单元 的电子传输层为同一膜层；
    所述空穴阻挡层的LUMO值与所述电子-空穴型发光主体材料的LUMO值之差的绝对值大于或等于0.2eV且小于或等于0.5eV；
    所述电子-空穴型发光主体材料的三线态能级小于或等于所述蓝光客体材料的三线态能级。
  16. 一种显示装置，其中，包括：如权利要求14或15所述的显示面板。
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WO2022141621A1 (zh) * 2021-01-04 2022-07-07 京东方科技集团股份有限公司 有机发光器件、发光基板和发光装置
CN112952013A (zh) * 2021-02-26 2021-06-11 京东方科技集团股份有限公司 有机发光二极管及其制作方法、显示基板和显示装置
CN115485871A (zh) * 2021-03-31 2022-12-16 京东方科技集团股份有限公司 显示基板和显示装置
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CN113629202A (zh) * 2021-07-22 2021-11-09 武汉华星光电半导体显示技术有限公司 显示面板
CN113725375B (zh) * 2021-08-30 2023-04-07 京东方科技集团股份有限公司 一种发光器件、显示装置
CN113969168B (zh) * 2021-10-27 2024-06-21 京东方科技集团股份有限公司 红光有机电致发光组合物、红光有机电致发光器件及包含其的显示装置
CN114284446B (zh) * 2021-12-30 2023-11-24 云谷（固安）科技有限公司 蓝光发光器件、显示面板和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108276336A (zh) * 2018-01-30 2018-07-13 瑞声光电科技(常州)有限公司 一种有机光电功能材料，及发光器件及其制备方法和应用
CN109671851A (zh) * 2017-10-16 2019-04-23 北京鼎材科技有限公司 一种有机电致发光器件
US20190372042A1 (en) * 2018-05-31 2019-12-05 Shanghai Tianma AM-OLED Co., Ltd. Organic light-emitting display panel and display device
CN110838549A (zh) * 2018-08-15 2020-02-25 江苏三月光电科技有限公司 一种基于激基复合物和激基缔合物体系的有机电致发光器件
CN111416049A (zh) * 2020-04-07 2020-07-14 苏州大学 双激基复合物主体材料在制备磷光oled器件中的应用
CN111969119A (zh) * 2020-08-28 2020-11-20 京东方科技集团股份有限公司 有机电致发光器件、显示面板及显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8206838B2 (en) * 2000-06-12 2012-06-26 Sumitomo Chemical Co., Ltd. Polymer matrix electroluminescent materials and devices
CN116056479A (zh) * 2011-02-16 2023-05-02 株式会社半导体能源研究所 发光元件
CN110492006B (zh) * 2018-05-14 2020-06-12 江苏三月光电科技有限公司 一种基于含硼有机化合物的电致发光器件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109671851A (zh) * 2017-10-16 2019-04-23 北京鼎材科技有限公司 一种有机电致发光器件
CN108276336A (zh) * 2018-01-30 2018-07-13 瑞声光电科技(常州)有限公司 一种有机光电功能材料，及发光器件及其制备方法和应用
US20190372042A1 (en) * 2018-05-31 2019-12-05 Shanghai Tianma AM-OLED Co., Ltd. Organic light-emitting display panel and display device
CN110838549A (zh) * 2018-08-15 2020-02-25 江苏三月光电科技有限公司 一种基于激基复合物和激基缔合物体系的有机电致发光器件
CN111416049A (zh) * 2020-04-07 2020-07-14 苏州大学 双激基复合物主体材料在制备磷光oled器件中的应用
CN111969119A (zh) * 2020-08-28 2020-11-20 京东方科技集团股份有限公司 有机电致发光器件、显示面板及显示装置

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