WO2024022202A1 - 发光器件、显示基板及显示装置 - Google Patents

发光器件、显示基板及显示装置 Download PDF

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Publication number
WO2024022202A1
WO2024022202A1 PCT/CN2023/108250 CN2023108250W WO2024022202A1 WO 2024022202 A1 WO2024022202 A1 WO 2024022202A1 CN 2023108250 W CN2023108250 W CN 2023108250W WO 2024022202 A1 WO2024022202 A1 WO 2024022202A1
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light
layer
emitting
hole
emitting device
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PCT/CN2023/108250
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English (en)
French (fr)
Inventor
邱丽霞
陈雪芹
王丹
陈磊
高荣荣
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京东方科技集团股份有限公司
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Publication of WO2024022202A1 publication Critical patent/WO2024022202A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a light-emitting device, a display substrate and a display device.
  • organic electroluminescent displays As a new type of flat panel display, have gradually received more attention. Due to its characteristics of active light emission, high brightness, high resolution, wide viewing angle, fast response speed, color saturation, thinness, lightness, low energy consumption and flexibility, it is known as a dream display and has become a hot mainstream display product in the market. .
  • a light-emitting device in one aspect, includes: an anode and a cathode arranged oppositely, and a light-emitting unit arranged between the anode and the cathode.
  • the light-emitting unit includes: at least two light-emitting layers and a charge generation layer disposed between two adjacent light-emitting layers in the at least two light-emitting layers.
  • At least one of the at least two light-emitting layers includes: a first sub-light-emitting layer and a second sub-light-emitting layer, and the first sub-light-emitting layer is closer to the anode than the second sub-light-emitting layer.
  • the first sub-emitting layer includes a first host material and a first guest material
  • the second sub-emitting layer includes a second host material and a second guest material
  • the triplet energy level of the first host material is greater than the Describe the triplet energy level of the second host material.
  • the triplet energy level of the host material is greater than the triplet energy level of the guest material.
  • the host material includes the first host material and the second host material
  • the guest material includes the first guest material and the second guest material.
  • the difference between the triplet energy level of the first host material and the triplet energy level of the second host material is greater than 0.1 eV.
  • the difference between the wavelength peak value of the light emitted by one of the at least two light emitting layers and the wavelength peak value of the light emitted by the remaining light emitting layers of the at least two light emitting layers, All are less than or equal to 10nm.
  • each of the at least two emitting layers emits blue light
  • the host material and the guest material of the emitting layer include a fused ring compound
  • the fused ring compound includes three or more benzene ring.
  • the fused ring compound includes any one of substituted or unsubstituted anthracene, substituted or unsubstituted phenanthrene, substituted or unsubstituted pyrene, and substituted or unsubstituted fluorene.
  • the fluorescence quantum yield of the light-emitting layer is greater than or equal to 85%.
  • the light-emitting layer is a film layer with horizontal orientation.
  • the host material includes anthracene derivatives
  • the guest material includes any one of pyrene derivatives and boron-containing derivatives.
  • the boron-containing derivative is selected from any one of the structures represented by the following general formula (I).
  • X is selected from O, S and NR 6 .
  • R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , Ar 1 and Ar 2 are the same or different, and are independently selected from H, D, F, substituted or unsubstituted alkyl, substituted or unsubstituted Any one of a cycloalkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, and a substituted or unsubstituted arylamino group.
  • the host material includes a deuterium-containing anthracene derivative and the guest material includes a material having thermal activation delay properties.
  • the light-emitting unit further includes: a red light-emitting layer, the red light-emitting layer includes a phosphorescent material, and the red light-emitting layer contains two third host materials. And, the light-emitting unit further includes: a green light-emitting layer, the green light-emitting layer includes a phosphorescent material, and the green light-emitting layer contains two fourth host materials.
  • the light-emitting device further includes a hole transport unit disposed between the anode and the light-emitting unit.
  • the hole transport unit includes: a hole injection layer, a first hole transport layer and a first electron blocking layer stacked along a first direction.
  • the first direction is a direction from the anode to the cathode.
  • the charge generation layer includes: a second hole blocking layer, a second electron transport layer, an electron generation layer, a hole generation layer, and a second hole transport layer stacked along the first direction. and a second electron blocking layer.
  • the charge generation layer includes: a second hole blocking layer, an electron generation layer, a hole generation layer, a second hole transport layer and a second electron blocking layer that are stacked along the first direction.
  • the hole mobility of the first hole transport layer is greater than the hole mobility of the first electron blocking layer. And/or, the hole mobility of the second hole transport layer is greater than the hole mobility of the second electron blocking layer.
  • the triplet energy level of the electron blocking layer is greater than the triplet energy level of the host material.
  • the electron blocking layer includes: the first electron blocking layer and the second electron blocking layer.
  • the light-emitting device further includes an electron transport unit disposed between the cathode and the light-emitting unit.
  • the electron transport unit includes: a third hole blocking layer, a third electron transport layer and an electron injection layer that are stacked along the first direction.
  • the size of the anode in the first direction ranges from 80 nm to 200 nm, and the hole The size range of the injection layer in the first direction is 5nm ⁇ 20nm, the size range of the hole transport layer in the first direction is 10nm ⁇ 100nm, and the electron blocking layer is in the first direction.
  • the size range of the luminescent layer in the first direction is 5nm to 45nm, the hole blocking layer has a size range of 2nm to 20nm in the first direction, and the The size range of the electron transport layer in the first direction is 20nm ⁇ 70nm, the size range of the electron injection layer in the first direction is 0.5nm ⁇ 10nm, and the electron generation layer is in the first direction.
  • the upward size range is 5 nm to 20 nm, the hole generating layer has a size range in the first direction of 5 nm to 20 nm, and the cathode size range in the first direction is 10 nm to 30 nm.
  • the hole transport layer includes: the first hole transport layer and the second hole transport layer; the hole blocking layer includes: the second hole blocking layer and the third hole blocking layer.
  • a hole blocking layer, the electron transport layer includes: the second electron transport layer and the third electron transport layer.
  • a resistance improvement layer is further provided on a side of the cathode away from the anode.
  • the material of the resistance improvement layer includes an organic material containing fluorine.
  • the display substrate includes: the light-emitting device as described in any of the above embodiments, where the light-emitting device includes an anode and a cathode arranged oppositely.
  • the display substrate further includes: a substrate, a pixel defining layer disposed on one side of the substrate, and a plurality of pixel grooves defined by the pixel defining layer.
  • One of the light-emitting devices is disposed in each of the plurality of pixel grooves, and the cathodes of the plurality of light-emitting devices are provided in the entire layer.
  • a plurality of auxiliary electrodes are further provided on the side of the cathode away from the anode, and the orthographic projection of each of the plurality of auxiliary electrodes on the substrate is located on the pixel defining layer on the within the orthographic projection on the substrate.
  • the size of the auxiliary electrode in a first direction ranges from 10 nm to 20 nm, and the first direction is a direction from the anode to the cathode.
  • a display device in another aspect, includes: the display substrate as described in the above embodiment.
  • Figure 1A is a structural diagram of a light-emitting device provided according to some embodiments of the present disclosure.
  • Figure 1B is another structural diagram of a light-emitting device provided according to some embodiments of the present disclosure.
  • Figure 2 is another structural diagram of a light-emitting device provided according to some embodiments of the present disclosure.
  • Figure 3A is another structural diagram of a light-emitting device provided according to some embodiments of the present disclosure.
  • Figure 3B is another structural diagram of a light-emitting device provided according to some embodiments of the present disclosure.
  • Figure 4 is another structural diagram of a light-emitting device provided according to some embodiments of the present disclosure.
  • Figure 5 is another structural diagram of a light-emitting device provided according to some embodiments of the present disclosure.
  • Figure 6 is a structural diagram of a display substrate provided according to some embodiments of the present disclosure.
  • Figure 7 is a structural diagram of a display device provided according to some embodiments of the present disclosure.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, features defined as “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.
  • At least one of A, B and C has the same meaning as “at least one of A, B or C” and includes the following combinations of A, B and C: A only, B only, C only, A and B The combination of A and C, the combination of B and C, and the combination of A, B and C.
  • a and/or B includes the following three combinations: A only, B only, and a combination of A and B.
  • parallel includes absolutely parallel and approximately parallel, and the acceptable deviation range of approximately parallel may be, for example, a deviation within 5°;
  • perpendicular includes absolutely vertical and approximately vertical, and the acceptable deviation range of approximately vertical may also be, for example, Deviation within 5°.
  • equal includes absolute equality and approximate equality, wherein the difference between the two that may be equal within the acceptable deviation range of approximately equal is less than or equal to 5% of either one, for example.
  • Example embodiments are described herein with reference to cross-sectional illustrations and/or plan views that are idealized illustrations.
  • the thickness of layers and regions are exaggerated for clarity. Accordingly, variations from the shapes in the drawings due, for example, to manufacturing techniques and/or tolerances are contemplated.
  • example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result from, for example, manufacturing. For example, an etched area shown as a rectangle will typically have curved features. Accordingly, the regions shown in the figures are schematic in nature and their shapes are not intended to illustrate the actual shapes of regions of the device and are not intended to limit the scope of the exemplary embodiments.
  • organic electroluminescent devices (Organic Light Emitting Diode, OLED) are widely used in the field of flat panel displays due to their advantages such as high brightness, saturated colors, thinness, and flexibility.
  • OLED Organic Light Emitting Diode
  • the light-emitting principle of OLED is: through a circuit connected between anode 101 and cathode 102, the anode 101 is used to inject holes into the light-emitting layer 5, and the cathode 102 injects electrons into the light-emitting layer 5.
  • the formed electrons and holes are Excitons are formed in the light-emitting layer 5, and the excitons transition back to the ground state through radiation and emit photons.
  • the performance of the device mainly depends on the material properties of each film layer and the device matching structure.
  • the material direction mainly considers the material hole mobility, material stability, material fluorescence quantum yield (PLQY), etc.
  • the device matching structure direction mainly considers the adjacent Energy level matching of the film layer, exciton distribution, electron and hole injection and accumulation, etc.
  • the present disclosure provides a light-emitting device 10.
  • the light-emitting device 10 includes an anode 101 and a cathode 102 arranged oppositely, and a light-emitting unit 104 arranged between the anode 101 and the cathode 102.
  • the light-emitting unit 104 includes: at least two light-emitting layers 5 and a charge generation layer 6 disposed between two adjacent light-emitting layers 5 of the at least two light-emitting layers 5 .
  • the light-emitting unit 104 includes two light-emitting layers 5 , namely a first light-emitting layer 5 a close to the anode 101 and a second light-emitting layer 5 b far away from the anode 101 .
  • a charge generation layer 6 is provided between the first light-emitting layer 5a and the second light-emitting layer 5b.
  • At least one of the at least two light-emitting layers 5 includes: a first sub-light-emitting layer 51 and a second sub-light-emitting layer 52 , and the first sub-light-emitting layer 51 is smaller than the second light-emitting layer 52 .
  • the sub-luminescent layer 52 is close to the anode 101 .
  • the first sub-emitting layer 51 includes a first host material and a first guest material.
  • the second sub-emitting layer 52 includes a second host material and a second guest material.
  • the triplet energy level T1 of the first host material is greater than that of the second host material.
  • the triplet energy level of the host material is greater than the triplet energy level of the guest material.
  • the host material includes a first host material and a second host material, and the guest material includes a first guest material and a second guest material.
  • the difference between the triplet energy level T1 of the first host material and the triplet energy level T2 of the second host material is greater than 0.1 eV, that is, T1-T2>0.1 eV.
  • T1-T2 0.2eV
  • T1-T2 0.3eV
  • T1-T2 0.4eV, etc., there is no limit here.
  • the triplet energy level T1 of the first host material is greater than the triplet energy level T3 of the first guest material, and the triplet energy level T1 of the first host material is greater than the triplet energy level T4 of the second guest material; at the same time, The triplet energy level T2 of the second host material is greater than the triplet energy level T3 of the first guest material, and the triplet energy level T2 of the second host material is greater than the triplet energy level T4 of the second guest material.
  • first guest material and the second guest material may be the same or different.
  • the light-emitting device 10 includes an anode 101 , a light-emitting unit 104 and a cathode 102 arranged along the first direction Y.
  • the light-emitting unit 104 includes two light-emitting layers 5 , and is arranged on the two light-emitting layers 5 charge generation layer 6 between.
  • the light-emitting device 10 is a stacked light-emitting device 10 .
  • the light-emitting layer 5 close to the anode is the first light-emitting layer 5a.
  • the first light-emitting layer 5a includes a first sub-light-emitting layer 51 and a second sub-light-emitting layer 52.
  • the first sub-light-emitting layer 51 is closer to the anode 101 than the second sub-emitting layer 52 .
  • the triplet energy level T1 of the first host material of the first sub-emitting layer 51 is greater than the triplet energy level T2 of the second host material, that is, T1>T2.
  • the triplet energy level T1 of the first host material By setting the triplet energy level T1 of the first host material to be greater than the triplet energy level T2 of the second host material, and the triplet energy level of the host material is greater than the triplet energy level of the guest material.
  • the electrons and holes can form excitons in the area where the second sub-emitting layer 52 is located, that is, the recombination area of electrons and holes is located in the area of the second sub-emitting layer 52 of the first emitting layer 5a, which is beneficial to the balance of excitons. , thereby improving the efficiency and life of the light-emitting device 10 .
  • the light-emitting layer 5 close to the cathode 102 is the second light-emitting layer 5b.
  • the second light-emitting layer 5b may include one layer, and the material of this layer may be the same as the material of the first sub-light-emitting layer 51. The same material can also be used as the second sub-light-emitting layer 52 .
  • the light-emitting device 10 includes an anode 101 , a light-emitting unit 104 and a cathode 102 arranged along the first direction Y.
  • the light-emitting unit 104 includes two light-emitting layers 5 , and is provided on the two light-emitting layers 5 charge generation layer 6 between.
  • the two luminescent layers 5 are respectively a first luminescent layer 5a and a second luminescent layer 5b.
  • the first luminescent layer 5a includes a first sub-luminescent layer 51 and a second sub-luminescent layer 52.
  • the first luminescent layer 5a The first sub-light-emitting layer 51 of the first light-emitting layer 5a is closer to the anode 101 than the second sub-light-emitting layer 52 of the first light-emitting layer 5a.
  • the second light-emitting layer 5b includes a first sub-light-emitting layer 51 and a second sub-light-emitting layer 52.
  • the first sub-light-emitting layer 51 of the second light-emitting layer 5b is smaller than the second sub-light-emitting layer 52 of the second light-emitting layer 5b. 52 is close to the anode 101.
  • the first sub-luminescent layers 51 each include a first host material and a first guest material
  • the second sub-luminescent layers 52 each include a second host material and a second guest material.
  • the triplet energy level of the first host material T1 is greater than the triplet energy level T2 of the second host material
  • the triplet energy level of the host material is greater than the triplet energy level of the guest material.
  • the triplet energy level T1 of the first host material is greater than the triplet energy level T2 of the second host material, and the triplet energy level of the host material is greater than the triplet energy level of the guest material. .
  • This causes the electrons and holes in the second light-emitting layer 5b to form excitons in the area where the second sub-light-emitting layer 52 of the second light-emitting layer 5b is located, which is beneficial to the balance of the excitons and has a TFT mechanism, thereby improving the performance of the light-emitting device 10 efficiency and longevity.
  • the TFT mechanism refers to the collision of two triplet excitons to generate singlet excitons, which improves fluorescence luminescence efficiency. It should be noted that the fluorescence emission mechanism is that the singlet state emits light and the triplet state does not emit light.
  • the light-emitting device 10 may include multiple light-emitting layers 5, such as three, four or five light-emitting layers 5, etc., which is not limited here.
  • the plurality of laminated light-emitting layers 5 can further improve the lifespan and efficiency of the light-emitting device 10 .
  • the peak wavelength of light emitted by one of the at least two light-emitting layers 5 is different from the wavelength of the light emitted by the remaining light-emitting layers 5 of the at least two light-emitting layers 5 .
  • the differences between the peaks are all less than or equal to 10nm.
  • the first luminescent layer 5a and the second luminescent layer 5b of the light-emitting device 10 both emit blue light.
  • the wavelength peak of the blue light emitted by the first luminescent layer 5a is different from that of the second luminescent layer.
  • the difference between the wavelength peaks of the blue light emitted by 5b is 10nm, 8nm, 5nm, 3nm or 0nm, etc., and there is no limit here.
  • the difference between the peak wavelength of light emitted by one light-emitting layer 5 and the peak wavelength of light emitted by other light-emitting layers 5 can be less than or equal to 10 nm, differences in the emitted light due to the microcavity effect can be avoided, and the cost of the light-emitting device 10 can be reduced.
  • the color shift ensures that the spectrum range of the final emitted light is narrow, thereby improving the effect of the light emitting device 10 emitting light.
  • each of the at least two luminescent layers 5 emits blue light
  • the host material and the guest material of the luminescent layer 5 include a fused ring compound
  • the fused ring compound includes three One or more benzene rings.
  • fused ring compounds containing three or more benzene rings themselves emit blue light, they have a TFT mechanism.
  • both light-emitting layers 5 of the light-emitting device 10 are configured to emit blue light, that is, the first light-emitting layer 5a emits light with a wavelength peak less than or equal to 480 nm, and the second light-emitting layer 5a emits light.
  • the wavelength peak of the light emitted by layer 5b is less than or equal to 480 nm.
  • the material of the light-emitting layer 5 includes a condensed ring compound containing three or more benzene rings.
  • the fused ring compound includes any one of substituted or unsubstituted anthracene, substituted or unsubstituted phenanthrene, substituted or unsubstituted pyrene, and substituted or unsubstituted fluorene.
  • anthracene phenanthrene
  • pyrene pyrene
  • fluorene the structures of anthracene, phenanthrene, pyrene and fluorene are as follows.
  • the host material includes anthracene derivatives
  • the guest material includes any one of pyrene derivatives and boron-containing derivatives.
  • the light-emitting device 10 includes two light-emitting layers 5.
  • the two light-emitting layers 5 are: a first light-emitting layer 5a and a second light-emitting layer 5b.
  • the first light-emitting layer 5a includes a first light-emitting layer 5a and a second light-emitting layer 5b.
  • the first guest material includes any one of pyrene derivatives and boron-containing derivatives, and the second guest material includes any one of pyrene derivatives and boron-containing derivatives.
  • the boron-containing derivative is selected from any one of the structures represented by the following general formula (I).
  • X is selected from O, S and NR 6 .
  • R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , Ar 1 and Ar 2 are the same or different, and are independently selected from H, D, F, substituted or unsubstituted alkyl, substituted or unsubstituted Any one of a cycloalkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, and a substituted or unsubstituted arylamino group.
  • the boron-containing derivative is selected from any one of the following structures.
  • (I-x) in the above structural formula is the name of each structure and is not part of the structural formula. Among them, x is a positive integer.
  • the host material includes an anthracene derivative containing deuterium (D) and the guest material includes a material with thermally activated delay properties.
  • An exemplary structural formula of an anthracene derivative containing deuterium (D) is as follows.
  • (2-x) in the above structural formula is the name of each structure and is not part of the structural formula. Among them, x is a positive integer.
  • deuterium is heavy hydrogen
  • setting deuterium substitution on carbon atoms can increase the stability of chemical bonds, thereby improving the thermal stability of the host material and extending the life of the light-emitting device 10 .
  • this type of guest material can utilize triplet excitons, can improve the luminous efficiency of the light-emitting device 10 .
  • a material with thermally activated delay properties refers to a material with a small energy level difference ( ⁇ EST) between singlet excitons and triplet excitons.
  • the fluorescence quantum yield of the light-emitting layer 5 is greater than or equal to 85%. Furthermore, the light-emitting layer 5 is a film layer having a horizontal orientation.
  • the fluorescence quantum yield of the light-emitting layer 5 is 85%, 86%, 87%, 88% or 90%, etc., and there is no limit here.
  • the horizontal direction is arranged perpendicular to the first direction Y
  • the vertical direction is arranged parallel to the first direction Y.
  • the light-emitting unit 104 further includes: a red light-emitting layer 54 .
  • 54 includes a phosphorescent material, and the red light emitting layer 54 contains two third host materials.
  • the light-emitting unit 104 also includes: a green light-emitting layer 53, the green light-emitting layer 53 includes a phosphorescent material, and the green light-emitting layer 5 contains two fourth host materials.
  • the singlet excitons and triplet excitons generated after the phosphorescent material is excited can emit light when they transition to the ground state, so that the IQE (Internal Quantum Efficiency, Internal Quantum Efficiency) of the light-emitting device 10 based on phosphorescence can reach 100%.
  • IQE Internal Quantum Efficiency, Internal Quantum Efficiency
  • the red light-emitting layer 54 contains two third host materials.
  • the two third host materials are electron-type materials and hole-type materials respectively.
  • the two third host materials can form an exciplex. things.
  • the green light-emitting layer 53 contains two fourth host materials.
  • the two fourth host materials are electron-type materials and hole-type materials respectively.
  • the two fourth host materials can form excimer groups. Complex.
  • electron-type materials can be regarded as electron-acceptor materials
  • hole-type materials can be regarded as electron-donor materials.
  • the two materials form an exciplex.
  • the excited state of the electron acceptor material and the ground state of the electron donor material interact to form a charge transfer state that emits light, which emits an emission spectrum that is different from the hole-type material and the electron-type material.
  • New spectra of emission spectra are used.
  • the two materials are beneficial to charge balance and move the exciton recombination region toward the center of the luminescent layer 5.
  • the final effect is to make the hole-electron pairs recombine and emit light in the luminescent layer 5 more effectively, and the exciton recombination region moves toward the luminescent layer 5.
  • the center of layer 5 is moved to improve the efficiency and life of the light emitting device 10 .
  • the light-emitting device 10 further includes a hole transport unit 102 disposed between the anode 101 and the light-emitting unit 104 .
  • the hole transport unit 102 includes: the hole injection layer 2 , the first hole transport layer 31 and the first electron blocking layer 41 which are stacked along the first direction Y.
  • the first direction Y is the direction from the anode 101 to the cathode 102 .
  • the hole transport unit 102 By disposing the hole transport unit 102 between the anode 101 and the light-emitting unit 104, the hole injection and transport efficiency of the light-emitting device 10 can be improved, and the luminous efficiency of the light-emitting device 10 can be improved.
  • the charge generation layer 6 includes: a second hole blocking layer 82 , a second electron transport layer 92 , an electron generation layer 301 , and a hole generation layer stacked along the first direction Y. 302.
  • the second hole transport layer 32 and the second electron blocking layer 42 are shown in FIG. 4 .
  • the charge generation layer 6 includes: a second hole blocking layer 82 , an electron generation layer 301 , a hole generation layer 302 , and a second hole transport layer stacked along the first direction Y. layer 32 and second electron blocking layer 42.
  • the charge generation layer 6 not only has the function of connecting two adjacent light-emitting layers 5, but also can improve the injection and transport functions of charges, where the charges represent electrons or holes.
  • the hole mobility of the first hole transport layer 31 is greater than the hole mobility of the first electron blocking layer 41 .
  • the hole mobility of the second hole transport layer 32 is greater than the hole mobility of the second electron blocking layer 42 .
  • the first hole transport layer 31 and the first electron blocking layer 41 are arranged adjacently, and the hole mobility of the first hole transport layer 31 is greater than the hole mobility of the first electron blocking layer 41 .
  • the second hole transport layer 32 and the second electron blocking layer 42 are arranged adjacently, and the hole mobility of the second hole transport layer 32 is greater than the hole mobility of the second electron blocking layer 42 .
  • the hole mobility of the hole transport layer 3 is greater than the hole mobility of the electron blocking layer 4 .
  • the hole transport layer 3 includes a first hole transport layer 31 and a second hole transport layer 32
  • the electron blocking layer 4 includes a first electron blocking layer 41 and a second electron blocking layer 42 .
  • the hole mobility of the hole transport layer 3 is greater than the hole mobility of the electron blocking layer 4, which increases the energy level barrier of the adjacent hole transport layer 3 and the electron blocking layer 4, and avoids the possibility of voids. Too many holes are transmitted to the electron blocking layer 4 too quickly, so as to solve the problem of holes accumulating between the electron blocking layer 4 and the light-emitting layer 5 and improve the situation of the recombination area close to the electron blocking layer 4. This effectively prevents holes from accumulating at the interface between the light-emitting layer 5 and the electron blocking layer 4 and enables the holes to move better into the light-emitting layer 5 , thereby improving the efficiency and lifespan of the light-emitting device 10 .
  • the hole mobility of the hole transport layer 3 ranges from 1 ⁇ 10 -4 cm 2 /(Vs) to 1 ⁇ 10 -6 cm 2 /(Vs).
  • the rate is 1 ⁇ 10 -4 cm 2 /(Vs), 1 ⁇ 10 -5 cm 2 /(Vs) or 1 ⁇ 10 -6 cm 2 /(Vs), etc. There is no limit here.
  • the hole mobility of the electron blocking layer 4 ranges from 1 ⁇ 10 -5 cm 2 /(Vs) to 1 ⁇ 10 -7 cm 2 /(Vs), and the hole mobility of the electron blocking layer 4 is 1 ⁇ 10 - 5 cm 2 /(Vs), 1 ⁇ 10 -6 cm 2 /(Vs) or 1 ⁇ 10 -7 cm 2 /(Vs), etc., there is no limit here.
  • the triplet energy level T5 of the electron blocking layer 4 is greater than the triplet energy level of the host material, wherein the electron blocking layer 4 includes: a first electron blocking layer 41, and a second electron blocking layer 42.
  • the first luminescent layer 5 a is disposed adjacent to the first electron blocking layer 41 , and the first luminescent layer 5 a includes a first sub-luminescent layer 51 and a second sub-luminescent layer 52 .
  • a sub-emitting layer 51 includes a first host material and a first guest material
  • a second sub-emitting layer 52 includes a second host material and a second guest material.
  • the host material includes a first host material and a second host material
  • the guest material includes a first guest material and a second guest material.
  • the triplet energy level T51 of the first electron blocking layer 41 is greater than the triplet energy level T1 of the first host material, that is, T51>T1.
  • the triplet energy level T1 of the first host material is greater than the triplet energy level T2 of the second host material.
  • the triplet energy level T51 of the first electron blocking layer 41 is greater than the triplet energy level of the host material.
  • the second light-emitting layer 5b is disposed adjacent to the second electron blocking layer 42, and the second light-emitting layer 5b includes a first sub-light-emitting layer 51 and a second sub-light-emitting layer 52.
  • the reason is that the triplet energy level T52 of the second electron blocking layer 42 is greater than the triplet energy level of the host material.
  • the triplet energy level T5 of the electron blocking layer 4 is greater than or equal to 2.2 eV.
  • the triplet energy level T5 of the electron blocking layer 4 By setting the triplet energy level T5 of the electron blocking layer 4 to be greater than the triplet energy level of the host material, electrons and holes can form excitons in the area where the light-emitting layer 5 is located, which is beneficial to the balance of the excitons, thereby improving the efficiency of the light-emitting device. Effectiveness of 10 rate and lifespan.
  • the light-emitting device 10 further includes an electron transport unit 103 disposed between the cathode 102 and the light-emitting unit 104 .
  • the electron transport unit 103 includes: a third hole blocking layer 83 , a third electron transport layer 93 and an electron injection layer 30 that are stacked along the first direction Y.
  • the electron transport unit 103 By disposing the electron transport unit 103 between the cathode 102 and the light-emitting unit 104, the electron injection and transmission efficiency of the light-emitting device 10 can be improved, and the luminous efficiency of the light-emitting device 10 can be improved.
  • the size d1 of the anode 101 in the first direction Y ranges from 80 nm to 200 nm.
  • the dimension d1 of the anode 101 in the first direction Y is the thickness of the anode 101 .
  • the size d1 of the anode 101 in the first direction Y is 80 nm, 120 nm, 150 nm or 200 nm, etc., and is not limited here.
  • the anode 101 includes a material with a high work function.
  • IZO indium zinc oxide
  • ITO indium tin oxide
  • a composite structure of a transparent oxide layer can be used as the anode 101, for example, Ag (silver)/ITO (indium tin oxide) or Ag (silver)/IZO (indium zinc oxide) wait.
  • the thickness of the metal layer is 80 nm to 100 nm, and the thickness of the metal oxide is 5 nm to 10 nm.
  • the thickness of the metal layer Ag is 80 nm, 90 nm or 100 nm, etc., and is not limited here.
  • the thickness of the metal oxide ITO indium tin oxide is 5 nm or 10 nm, etc., and is not limited here.
  • the average reflectivity of the visible area of the anode 101 is 85% to 95%.
  • the bottom-emission structure light-emitting device 10 refers to using the anode 101 as a transparent electrode and the cathode 102 as a reflective electrode.
  • the light-emitting device 10 of the top-emission structure refers to using the anode 101 as a reflective electrode and the cathode 102 as a transparent electrode.
  • the size d2 of the hole injection layer 2 in the first direction Y ranges from 5 nm to 20 nm.
  • the size d2 of the hole injection layer 2 in the first direction Y is 5 nm, 10 nm, 15 nm or 20 nm, etc., and is not limited here.
  • the main function of the hole injection layer 2 is to reduce the hole injection barrier and improve the hole injection efficiency.
  • the material of the hole injection layer 2 includes HATCN (its structure refers to the structural formula shown in PD below) or CuPc (copper phthalocyanine).
  • the material of the hole injection layer 2 can also be p-type doped.
  • the p-type doping material includes, for example, NPB:F4TCNQ or TAPC: MnO3 , etc., and the doping concentration ranges from 0.5% to 10%.
  • the size d3 of the hole transport layer 3 in the first direction Y ranges from 10 nm to 100 nm.
  • the hole transport layer 3 includes a first hole transport layer 31 and a second hole transport layer 32 .
  • the size d3 of the first hole transport layer 31 in the first direction Y is 10 nm, 50 nm, 70 nm or 100 nm, etc., and is not limited here.
  • the size d3 of the second hole transport layer 32 in the first direction Y is 10 nm, 40 nm, 80 nm or 100 nm, etc., and is not limited here.
  • the dimensions d3 of the first hole transport layer 31 and the second hole transport layer 32 in the first direction Y may be equal or unequal.
  • the material of the hole transport layer 3 includes carbazole or arylamine materials with high hole mobility.
  • the highest occupied molecular orbital (HOMO) energy level of the material of the hole transport layer 3 is between -5.2eV and -5.6eV.
  • the highest occupied molecular orbital (HOMO) energy level of the material of the hole transport layer 3 is -5.2eV, -5.3eV, -5.4eV, -5.5eV or -5.6eV, etc., and there is no limit here.
  • the hole transport layer 3 is prepared by evaporation.
  • the size d4 of the electron blocking layer 4 in the first direction Y ranges from 20 nm to 70 nm.
  • the electron blocking layer 4 includes a first electron blocking layer 41 and a second electron blocking layer 42 .
  • the size d4 of the first electron blocking layer 41 in the first direction Y is 20 nm, 40 nm, 50 nm or 70 nm, etc., and is not limited here.
  • the size d4 of the second electron blocking layer 42 in the first direction Y is 20 nm, 30 nm, 60 nm or 70 nm, etc., and is not limited here.
  • the dimensions d4 of the first electron blocking layer 41 and the second electron blocking layer 42 in the first direction Y may be equal or unequal.
  • the main function of the electron blocking layer 4 is to transport holes and block electrons and excitons generated in the light-emitting layer 5 .
  • the size d5 of the light-emitting layer 5 in the first direction Y ranges from 5 nm to 45 nm.
  • the size d5 of the light-emitting layer 5 in the first direction Y is 5 nm, 15 nm, 30 nm or 45 nm, etc., and is not limited here.
  • the light-emitting layer 5 includes a first sub-light-emitting layer 51 and a second sub-light-emitting layer 52 .
  • the size d51 of the first sub-light-emitting layer 51 in the first direction Y is the same as that of the second sub-light-emitting layer 52 .
  • the dimensions d52 in the first direction Y may be equal or unequal.
  • the size d51 of the first sub-light-emitting layer 51 in the first direction Y is 6 nm
  • the size d52 of the second sub-light-emitting layer 52 in the first direction Y is 10 nm.
  • the sum of the size d51 of the first sub-light-emitting layer 51 in the first direction Y and the size d52 of the second sub-light-emitting layer 52 in the first direction Y is the size of the light-emitting layer 5 in the first direction Y.
  • the dimensions d5 of the first luminescent layer 5a and the second luminescent layer 5b in the first direction Y may be equal or unequal.
  • the first sub-emitting layer 51 includes a first host material and a first guest material, and the doping ratio of the first guest material is 0.5% to 20%.
  • the doping ratio of the first guest material is 0.5%, 5%, 8%, 15%, 17% or 20%, etc., and there is no limit here.
  • the second sub-emitting layer 52 includes a second host material and a second guest material.
  • the doping ratio of the second guest material may refer to the doping ratio of the first guest material, which will not be described again here.
  • the size d6 of the hole blocking layer 8 in the first direction Y ranges from 2 nm to 20 nm.
  • the hole blocking layer 8 includes a second hole blocking layer 82 and a third hole blocking layer 83 .
  • the size d6 of the second hole blocking layer 82 in the first direction Y is 2 nm, 10 nm, 15 nm or 20 nm, etc., and is not limited here.
  • the size d6 of the third hole blocking layer 83 in the first direction Y is 2 nm, 8 nm, 16 nm or 20 nm, etc., and is not limited here.
  • the size d4 of the second hole blocking layer 82 and the third hole blocking layer 83 in the first direction Y may be equal or unequal.
  • the hole blocking layer 8 mainly functions to transfer electrons and block holes and excitons generated in the light-emitting layer 5 .
  • the size d7 of the electron transport layer 9 in the first direction Y ranges from 20 nm to 70 nm.
  • the electron transport layer 9 includes a second electron transport layer 92 and a third electron transport layer 93 .
  • the size d6 of the second electron transport layer 92 in the first direction Y is 20 nm, 50 nm, 60 nm or 70 nm, etc., and is not limited here.
  • the size d6 of the third electron transport layer 93 in the first direction Y is 20 nm, 30 nm, 40 nm or 70 nm, etc., and is not limited here.
  • the size d4 of the second electron transport layer 92 and the third electron transport layer 93 in the first direction Y may be equal or unequal.
  • the size d8 of the electron injection layer 30 in the first direction Y ranges from 0.5 nm to 10 nm.
  • the size d9 of the electron generation layer 301 in the first direction Y ranges from 5 nm to 20 nm.
  • the size d10 of the hole generating layer 302 in the first direction Y ranges from 5 nm to 20 nm.
  • the size d8 of the electron injection layer 30 in the first direction Y is 0.5 nm, 5 nm, 7 nm or 10 nm, etc., and is not limited here.
  • the size d9 of the electron generation layer 301 in the first direction Y is 5 nm, 15 nm, 18 nm or 20 nm, etc., and is not limited here.
  • the electron generation layer 301 uses an electron transport material.
  • the electron generation layer 301 uses an anthracene derivative or an azine-based material with a phosphorus-oxygen double bond, and is formed by co-evaporation with metal Li (lithium) or Yb (ytterbium). .
  • the size d10 of the hole generation layer 302 in the first direction Y is 5 nm, 10 nm, 15 nm or 20 nm, etc., and is not limited here.
  • the size d11 of the cathode 102 in the first direction Y ranges from 10 nm to 30 nm.
  • the size d11 of the cathode 102 in the first direction Y is 10 nm, 15 nm, 20 nm or 30 nm, etc., and is not limited here.
  • the cathode 102 when used in the light-emitting device 10 of a top-emission structure, is formed by using Mg (magnesium), Ag (silver) or Al (aluminum) through an evaporation process.
  • MgAg (magnesium silver) alloy can also be used to form the cathode 102, and the mass ratio of the MgAg (magnesium silver) alloy ranges from 3:7 to 1:9.
  • the cathode 102 formed of the above metal has a light transmittance range of 50% to 60% at a wavelength of 530 nm.
  • a resistance improvement layer 107 is also provided on the side of the cathode 102 away from the anode 101 .
  • the material of the resistance improvement layer 107 includes an organic material containing fluorine.
  • the material of the resistance improvement layer 107 is a material with low affinity and low adhesion, which is beneficial to the patterning of the cathode 102 and facilitates the formation of the auxiliary cathode 108.
  • the auxiliary cathode 108 please refer to the following content, here No longer.
  • the structure of the fluorine-containing organic material may be selected from any of the following structural formulas.
  • a metal mask (FMM) is used to form the resistance improvement layer 107 through an evaporation process.
  • the provision of the resistance improvement layer 107 can reduce the problem of large voltage difference between the anode 101 and the cathode 102.
  • the film thickness and thickness of the light-emitting device 10 provided in Comparative Example, Example 1, Example 2 and Example 3 are The film layer materials are shown in Table 1 below.
  • the structure of the light-emitting device 10 represented in Embodiment 1 and Embodiment 2 can be shown with reference to FIG. 1A (wherein, the structure of the charge generation layer 6 can be shown with reference to the structure of the charge generation layer 6 in FIG. 5).
  • the structure of the light-emitting device 10 shown can be referred to that shown in FIG. 5 .
  • the hole injection layer 2 is represented by HIL
  • the first hole transport layer 31 is represented by HTL1
  • the first electron blocking layer 41 is represented by EBL1
  • the first light emitting layer 5a is represented by EML1
  • the second hole blocking layer 82 is represented by is HBL2
  • the electron generating layer 301 is represented by N-CGL
  • the hole generating layer 302 is represented by P-CGL
  • the second hole transport layer 32 is represented by HTL2
  • the second electron blocking layer 42 is represented by EBL2
  • the second light-emitting layer 5b is represented by EML2
  • the third hole blocking layer 83 is represented by HBL3
  • the third electron transport layer 93 is represented by ETL3
  • the electron injection layer 30 is represented by EIL.
  • the HIL of Embodiment 3 is 10 nm, which means that the thickness of the hole injection layer 2 of Embodiment 3 is 10 nm, and the rest are the same.
  • the thickness of each film layer in Examples 1 to 3 is consistent.
  • the thickness of the film layer in the comparative example was designed based on the microcavity effect.
  • PD, HT-1, HT-2, BH, BH-1, BD, BD-1, HB-1, ET-1, LiQ, Yb, Mg:Ag in Table 1 represent the film layer
  • Mg:Ag (2:8) means that the mass ratio of Mg (magnesium):Ag (silver) alloy in the cathode 102 material is 2:8.
  • BH:BD (3%) means that the mass proportion of the material represented by the structural formula of BD in EML (including EML1 and EML2) is 3%, and the same applies to other materials.
  • the structural formulas represented by PD, HT-1, HT-2, BH, BH-1, BD, BD-1, HB-1 and ET-1 are as follows.
  • the color coordinate is an indicator of the color of the light-emitting device 10 , indicating that the light-emitting device 10 provided by the technical solution of the present disclosure has higher color saturation.
  • the display substrate 100 includes the light-emitting device 10 provided in any of the above embodiments.
  • the light-emitting device 10 includes an anode 101 and a cathode 102 arranged oppositely.
  • the display substrate 100 further includes: a substrate 50 and a pixel defining layer 60 disposed on one side of the substrate 50 , and a plurality of pixel grooves 70 defined by the pixel defining layer 60 .
  • Each of the plurality of pixel grooves 70 is One light-emitting device 10 is disposed in each pixel groove 70, and the cathodes 102 of multiple light-emitting devices 10 are arranged in an entire layer. That is to say, the cathodes 102 of the multiple light-emitting devices 10 are one film layer.
  • the light-emitting device 10 includes a luminescent layer 5 , a red luminescent layer 54 and a green luminescent layer 53 that emit blue light.
  • the anode 101 includes a luminescent layer 5 , a red luminescent layer 54 and a green luminescent layer 53 .
  • a plurality of auxiliary electrodes 108 are provided on the side of the cathode 102 away from the anode 101.
  • the orthographic projection of each of the plurality of auxiliary electrodes 108 on the substrate 50 is located at the orthogonal position of the pixel defining layer 60 on the substrate 50. within the projection.
  • the area where the pixel definition layer 60 is located is the non-emitting area SS1
  • the area where the light-emitting device 10 is located in the pixel groove 70 is the emitting area SS2
  • the auxiliary electrode 108 is disposed in the non-emitting area SS1, which can avoid affecting the light extraction efficiency.
  • the electrode transmittance of the cathode 102 in the light-emitting area SS2 is not affected. In this case, the problems of large surface resistance, uneven brightness, and large voltage difference between the top and bottom of the light-emitting device 10 are improved.
  • the substrate 50 may be an array substrate, which includes a thin film transistor (TFT) array.
  • the array substrate includes a substrate, and an active layer and a gate layer sequentially stacked on the substrate.
  • Anode 101 is provided on the side of the flat layer away from the substrate.
  • the above-mentioned substrate 50 can also be a base substrate, and the display substrate 100 also includes other film layers disposed between the substrate 50 and the anode 101, such as active layers, gate insulation layers, gate metal layers, and layers. inter-insulating layer, source-drain metal layer and flat layer.
  • the size d12 of the auxiliary electrode 108 in the first direction Y ranges from 10 nm to 20 nm.
  • the first direction Y is the direction from the anode 101 to the cathode 102 .
  • the size d12 of the auxiliary electrode 108 in the first direction Y is 10 nm, 15 nm, or 20 nm, etc., and is not limited here.
  • the beneficial effects of the light-emitting substrate 100 provided by the present disclosure are the same as the beneficial effects of the light-emitting device 10 provided by the first aspect of the present disclosure, and will not be described again here.
  • Some embodiments of the present disclosure also provide a display device 1000, as shown in FIG. 7, including the display substrate 100 provided in the above embodiments.
  • the display device 1000 may be any device that displays text or images, whether moving (eg, video) or fixed (eg, still images). More specifically, it is contemplated that the embodiments may be implemented in or in association with a variety of electronic devices, such as, but not limited to, mobile phones, wireless devices, personal data assistants (PDAs) , handheld or portable computers, GPS receivers/navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer display, etc.), navigator, cockpit controller and/or display, camera view display (e.g. display of a rear view camera in a vehicle), electronic photos, electronic billboards or signs, projectors, building structures, packaging and aesthetic structure (for example, for the display of an image of a piece of jewelry), etc.
  • PDAs personal data assistants
  • GPS receivers/navigators cameras
  • MP4 video players camcorders
  • game consoles watches

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Abstract

一种发光器件（10）、显示基板（100）及显示装置（1000），涉及显示技术领域，用于提高发光器件（10）的效率和寿命。发光器件（10）包括：相对设置的阳极（101）和阴极（102），以及设置于阳极（101）和阴极（102）之间的发光单元（104）；发光单元（104）包括：至少两个发光层（5）和设置于至少两个发光层（5）中的相邻的两个发光层（5）之间的电荷产生层（6）；至少两个发光层（5）中的至少一个发光层（5）包括：第一子发光层（51）和第二子发光层（52），第一子发光层（51）比第二子发光层（52）靠近阳极（101）；第一子发光层（51）包括第一主体材料和第一客体材料，第二子发光层（52）包括第二主体材料和第二客体材料，第一主体材料的三线态能级，大于第二主体材料的三线态能级，主体材料的三线态能级大于客体材料的三线态能级。

Description

发光器件、显示基板及显示装置
本申请要求于2022年7月29日提交的、申请号为202210910661.2的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，尤其涉及一种发光器件、显示基板及显示装置。
背景技术
近年来，有机电致发光显示器(Organic Light Emitting Diode，OLED)作为一种新型的平板显示逐渐受到更多的关注。由于其具有主动发光、发光亮度高、分辨率高、宽视角、响应速度快、色彩饱和、轻薄、低能耗以及可柔性化等特点，被誉为梦幻显示，成为目前市场上炙手可热的主流显示产品。
发明内容
一方面，提供一种发光器件，发光器件包括：相对设置的阳极和阴极，以及设置于所述阳极和所述阴极之间的发光单元。其中，所述发光单元包括：至少两个发光层和设置于所述至少两个发光层中的相邻的两个发光层之间的电荷产生层。
所述至少两个发光层中的至少一个发光层包括：第一子发光层和第二子发光层，所述第一子发光层比所述第二子发光层靠近所述阳极。所述第一子发光层包括第一主体材料和第一客体材料，所述第二子发光层包括第二主体材料和第二客体材料，所述第一主体材料的三线态能级，大于所述第二主体材料的三线态能级。且，主体材料的三线态能级大于客体材料的三线态能级。其中，所述主体材料包括所述第一主体材料和所述第二主体材料，所述客体材料包括所述第一客体材料和所述第二客体材料。
在一些实施例中，所述第一主体材料的三线态能级，与所述第二主体材料的三线态能级的差值大于0.1eV。
在一些实施例中，所述至少两个发光层中的一个所述发光层发射光的波长峰值，与所述至少两个发光层中的其余所述发光层发射光的波长峰值的差值，均小于或等于10nm。
在一些实施例中，所述至少两个发光层中的每个发光层发射蓝光，所述发光层的主体材料和客体材料包含稠环化合物，所述稠环化合物包含有三个或三个以上的苯环。
在一些实施例中，所述稠环化合物包括取代或未取代的蒽、取代或未取代的菲、取代或未取代的芘和取代或未取代的芴中的任一种。
在一些实施例中，所述发光层的荧光量子产率大于或等于85％。且，所述发光层为具有水平取向的膜层。
在一些实施例中，所述主体材料包括蒽衍生物，所述客体材料包括芘衍生物和含硼衍生物中的任一种。
在一些实施例中，所述含硼衍生物选自如下通式(Ⅰ)所示结构中的任一种。
其中，X选自O、S和NR6。R1、R2、R3、R4、R5、R6、Ar1和Ar2相同或不同，分别独立的选自H、D、F、取代或未取代的烷基、取代或未取代的环烷基、取代或未取代的芳基、取代或未取代的杂芳基以及取代或未取代的芳氨基中的任一种。
在一些实施例中，所述主体材料包括含有氘的蒽衍生物，所述客体材料包括具有热活化延迟性质的材料。
在一些实施例中，所述发光单元还包括：红光发光层，所述红色发光层包括磷光材料，且所述红色发光层含有两种第三主体材料。和，所述发光单元还包括：绿光发光层，所述绿光发光层包括磷光材料，且所述绿光发光层含有两种第四主体材料。
在一些实施例中，发光器件还包括设置于阳极和发光单元之间的空穴传输单元。所述空穴传输单元包括：沿第一方向层叠设置的空穴注入层、第一空穴传输层和第一电子阻挡层。其中，所述第一方向为由所述阳极指向所述阴极的方向。
在一些实施例中，所述电荷产生层包括：沿所述第一方向层叠设置的第二空穴阻挡层、第二电子传输层、电子产生层、空穴产生层、第二空穴传输层和第二电子阻挡层。或，所述电荷产生层包括：沿所述第一方向层叠设置的第二空穴阻挡层、电子产生层、空穴产生层、第二空穴传输层和第二电子阻挡层。
在一些实施例中，所述第一空穴传输层的空穴迁移率，大于所述第一电子阻挡层的空穴迁移率。和/或，所述第二空穴传输层的空穴迁移率，大于所述第二电子阻挡层的空穴迁移率。
在一些实施例中，所述电子阻挡层的三线态能级，大于所述主体材料的三线态能级。其中，所述电子阻挡层包括：所述第一电子阻挡层和所述第二电子阻挡层。
在一些实施例中，发光器件还包括设置于阴极和发光单元之间的电子传输单元。所述电子传输单元包括：沿所述第一方向层叠设置的第三空穴阻挡层、第三电子传输层和电子注入层。
在一些实施例中，所述阳极在所述第一方向上的尺寸范围为80nm～200nm，所述空穴 注入层在所述第一方向上的尺寸范围为5nm～20nm，所述空穴传输层在所述第一方向上的尺寸范围为10nm～100nm，所述电子阻挡层在所述第一方向上的尺寸范围为20nm～70nm，所述发光层在所述第一方向上的尺寸范围为5nm～45nm，所述空穴阻挡层在所述第一方向上的尺寸范围为2nm～20nm，所述电子传输层在所述第一方向上的尺寸范围为20nm～70nm，所述电子注入层在所述第一方向上的尺寸范围为0.5nm～10nm，所述电子产生层在所述第一方向上的尺寸范围为5nm～20nm，所述空穴产生层在所述第一方向上的尺寸范围为5nm～20nm，所述阴极在所述第一方向上的尺寸范围为10nm～30nm。
其中，所述空穴传输层包括：所述第一空穴传输层和所述第二空穴传输层，所述空穴阻挡层包括：所述第二空穴阻挡层和所述第三空穴阻挡层，所述电子传输层包括：所述第二电子传输层和所述第三电子传输层。
在一些实施例中，所述阴极远离所述阳极的一侧还设置有电阻改善层。
在一些实施例中，所述电阻改善层的材料包括含有氟的有机材料。
另一方面，提供一种显示基板，显示基板包括：如上任一实施例所述的发光器件，所述发光器件包括相对设置的阳极和阴极。显示基板还包括：基板和设置于所述基板一侧的像素界定层，以及由所述像素界定层限定的多个像素凹槽。所述多个像素凹槽中的每个像素凹槽内设置有一个所述发光器件，多个所述发光器件的所述阴极为整层设置。其中，所述阴极远离所述阳极的一侧还设置有多个辅助电极，所述多个辅助电极中的每个辅助电极在所述基板上的正投影，位于所述像素界定层在所述基板上的正投影内。
在一些实施例中，所述辅助电极在第一方向上的尺寸范围为10nm～20nm，所述第一方向为由所述阳极指向所述阴极的方向。
又一方面，提供一种显示装置，显示装置包括：如上实施例所述的显示基板。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。
图1A为根据本公开一些实施例所提供的发光器件的结构图；
图1B为根据本公开一些实施例所提供的发光器件的另一种结构图；
图2为根据本公开一些实施例所提供的发光器件的又一种结构图；
图3A为根据本公开一些实施例所提供的发光器件的又一种结构图；
图3B为根据本公开一些实施例所提供的发光器件的又一种结构图；
图4为根据本公开一些实施例所提供的发光器件的又一种结构图；
图5为根据本公开一些实施例所提供的发光器件的又一种结构图；
图6为根据本公开一些实施例所提供的显示基板的结构图；
图7为根据本公开一些实施例所提供的显示装置的结构图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。
“A和/或B”，包括以下三种组合：仅A，仅B，及A和B的组合。
如本文所使用的那样，“平行”、“垂直”、“相等”包括所阐述的情况以及与所阐述的情况相近似的情况，该相近似的情况的范围处于可接受偏差范围内，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即，测量系统的局限性)所确定。例如，“平行”包括绝对平行和近似平行，其中近似平行的可接受偏差范围例如可以是5°以内偏差；“垂直”包括绝对垂直和近似垂直，其中近似垂直的可接受偏差范围例如也可以是5°以内偏差。“相等”包括绝对相等和近似相等，其中近似相等的可接受偏差范围内例如可以是相等的两者之间的差值小于或等于其中任一者的5％。
应当理解的是，当层或元件被称为在另一层或基板上时，可以是该层或元件直接在另一层或基板上，或者也可以是该层或元件与另一层或基板之间存在中间层。
本文参照作为理想化示例性附图的剖视图和/或平面图描述了示例性实施方式。在附图中，为了清楚，放大了层和区域的厚度。因此，可设想到由于例如制造技术和/或公差引起的相对于附图的形状的变动。因此，示例性实施方式不应解释为局限于本文示出的区域的形状，而是包括因例如制造而引起的形状偏差。例如，示为矩形的蚀刻区域通常将具有弯曲的特征。因此，附图中所示的区域本质上是示意性的，且它们的形状并非旨在示出设备的区域的实际形状，并且并非旨在限制示例性实施方式的范围。
目前，有机电致发光器件(Organic Light Emitting Diode，OLED)由于具有亮度高、色彩饱和、轻薄、可弯曲等优点，广泛应用于平板显示领域。如图1A所示，OLED的发光原理为：通过阳极101和阴极102连接的电路，利用阳极101向发光层5注入空穴，阴极102向发光层5注入电子，所形成的电子和空穴在发光层5中形成激子，激子通过辐射跃迁回到基态，发出光子。
但是，在相关技术中，存在空穴和电子的复合区域偏向电子阻挡层4(例如第一电子阻挡层41)和发光层5之间的问题，导致器件的出光效率较差。而且，OLED应用的另一个问题是蓝光的寿命和效率较低，导致OLED在显示后期出现颜色发粉等问题，制约了OLED在显示领域的应用，使得OLED不能使用于寿命较长的设备。
在常规技术中，为了提高蓝光性能，致力于研发新的发光层材料。但是，经过多年的发展，从材料方向提升发光器件寿命的潜力越来越小，成本也越来越高。
器件的性能主要取决于各膜层的材料本身性能和器件搭配结构，材料方向主要考虑材料空穴迁移率、材料稳定性、材料荧光量子产率(PLQY)等，器件搭配结构方向主要考虑相邻膜层的能级匹配、激子分布情况、电子和空穴注入和堆积情况等。
基于此，本公开提供一种发光器件10，如图1A和图1B所示，发光器件10包括相对设置的阳极101和阴极102，以及设置于阳极101和阴极102之间的发光单元104。其中，发光单元104包括：至少两个发光层5和设置于至少两个发光层5中的相邻的两个发光层5之间的电荷产生层6。
示例性的，如图1B所示，发光单元104包括两个发光层5，分别为靠近阳极101的第一个发光层5a和远离阳极101的第二个发光层5b。第一个发光层5a和第二个发光层5b之间设置有电荷产生层6。
在一些实施例中，如图1B所示，至少两个发光层5中的至少一个发光层5包括：第一子发光层51和第二子发光层52，第一子发光层51比第二子发光层52靠近阳极101。第一子发光层51包括第一主体材料和第一客体材料，第二子发光层52包括第二主体材料和第二客体材料，第一主体材料的三线态能级T1，大于第二主体材料的三线态能级T2，即T1>T2。并且，主体材料的三线态能级大于客体材料的三线态能级。其中，主体材料包括第一主体材料和第二主体材料，客体材料包括第一客体材料和第二客体材料。
示例性的，第一主体材料的三线态能级T1，与第二主体材料的三线态能级T2的差值大于0.1eV，即T1-T2>0.1eV。例如，T1-T2＝0.2eV、T1-T2＝0.3eV或T1-T2＝0.4eV等，此处并不设限。
也就是说，第一主体材料的三线态能级T1大于第一客体材料的三线态能级T3，第一主体材料的三线态能级T1大于第二客体材料的三线态能级T4；同时，第二主体材料的三线态能级T2大于第一客体材料的三线态能级T3，第二主体材料的三线态能级T2大于第二客体材料的三线态能级T4。
需要说明的是，第一客体材料和第二客体材料可以相同，也可以不同。
在一些示例中，如图2所示，发光器件10包括沿第一方向Y设置的阳极101、发光单元104和阴极102，发光单元104包括两个发光层5、以及设置于两个发光层5之间的电荷产生层6。
也就是说，该发光器件10为叠层发光器件10。
示例性的，如图2所示，靠近阳极的发光层5为第一个发光层5a，第一个发光层5a包括第一子发光层51和第二子发光层52，第一子发光层51比第二子发光层52靠近阳极101。第一子发光层51的第一主体材料的三线态能级T1，大于第二主体材料的三线态能级T2，即T1>T2。
通过设置第一主体材料的三线态能级T1，大于第二主体材料的三线态能级T2，并且，主体材料的三线态能级大于客体材料的三线态能级。可以使得电子和空穴在第二子发光层52所在的区域形成激子，即电子和空穴的复合区域位于第一个发光层5a的第二子发光层52区域，有利于激子的平衡，从而提高发光器件10的效率和寿命。
示例性的，如图2所示，靠近阴极102的发光层5为第二个发光层5b，第二个发光层5b可以包括一层，该层的材料可以与第一子发光层51的材料相同，也可以与第二子发光层52的材料相同。
在一些示例中，如图3A所示，发光器件10包括沿第一方向Y设置的阳极101、发光单元104和阴极102，发光单元104包括两个发光层5、以及设置于两个发光层5之间的电荷产生层6。
其中，两个发光层5分别为第一个发光层5a和第二个发光层5b，第一个发光层5a包括第一子发光层51和第二子发光层52，第一个发光层5a的第一子发光层51，比第一个发光层5a的第二子发光层52靠近阳极101。同时，第二个发光层5b包括第一子发光层51和第二子发光层52，第二个发光层5b的第一子发光层51，比第二个发光层5b的第二子发光层52靠近阳极101。
而且，第一子发光层51均包括：第一主体材料和第一客体材料，第二子发光层52均包括：第二主体材料和第二客体材料。在第一个发光层5a中，第一主体材料的三线态能级 T1，大于第二主体材料的三线态能级T2，并且，主体材料的三线态能级，大于客体材料的三线态能级。使得第一个发光层5a的电子和空穴在第一个发光层5a的第二子发光层52所在的区域形成激子，有利于激子的平衡，具有TFT机制，从而提高发光器件10的效率和寿命。
在第二个发光层5b中，第一主体材料的三线态能级T1，大于第二主体材料的三线态能级T2，并且，主体材料的三线态能级，大于客体材料的三线态能级。使得第二个发光层5b的电子和空穴在第二个发光层5b的第二子发光层52所在的区域形成激子，有利于激子的平衡，具有TFT机制，从而提高发光器件10的效率和寿命。
其中，TFT机制是指两个三线态激子碰撞产生单线态激子，提高荧光发光效率。需要说明的是，荧光发光机制是单线态发光，三线态不发光。
需要说明的是，发光器件10可以包括多个发光层5，例如三个、四个或者五个发光层5等，此处并不设限。层叠设置的多个发光层5可以进一步提高发光器件10的寿命和效率。
在一些实施例中，如图1A～图3B所示，至少两个发光层5中的一个发光层5发射光的波长峰值，与至少两个发光层5中的其余发光层5发射光的波长峰值的差值，均小于或等于10nm。
示例性的，如图2所示，发光器件10的第一个发光层5a和第二个发光层5b均发射蓝光，第一个发光层5a发射的蓝光的波长峰值，与第二个发光层5b发射的蓝光的波长峰值的差值，为10nm、8nm、5nm、3nm或0nm等，此处并不设限。
通过设置一个发光层5发射光的波长峰值，与其他发光层5发射光的波长峰值的差值，小于或等于10nm，可以避免发射的光由于微腔效应而存在差异，可以减少发光器件10的色偏，保证最终发射的光的光谱范围较窄，提高发光器件10发射光的效果。
在一些实施例中，如图1A～图3A所示，至少两个发光层5中的每个发光层5发射蓝光，发光层5的主体材料和客体材料包含稠环化合物，稠环化合物包含有三个或三个以上的苯环。
由于含有三个或三个以上的苯环的稠环化合物(例如含有蒽的化合物)本身发射蓝光，具有TFT机制。
在一些示例中，如图2所示，发光器件10的两个发光层5均被配置为发射蓝光，即第一个发光层5a发射的光的波长峰值小于或等于480nm，且第二个发光层5b发射的光的波长峰值小于或等于480nm。发光层5的材料包含含有三个或三个以上苯环的稠环化合物。例如，稠环化合物包括取代或未取代的蒽、取代或未取代的菲、取代或未取代的芘和取代或未取代的芴中的任一种。
其中，蒽、菲、芘和芴的结构如下所示。
在一些实施例中，主体材料包括蒽衍生物，客体材料包括芘衍生物和含硼衍生物中的任一种。
示例性的，如图2所示，发光器件10包括两个发光层5，两个发光层5分别为：第一个发光层5a和第二个发光层5b，第一个发光层5a包括第一子发光层51和第二子发光层52，第一主体材料包括蒽衍生物，第二主体材料包括蒽衍生物，即取代的蒽。第一客体材料包括芘衍生物和含硼衍生物中的任一种，第二客体材料包括芘衍生物和含硼衍生物中的任一种。
在一些示例中，含硼衍生物选自如下通式(Ⅰ)所示结构中的任一种。
其中，X选自O、S和NR6。R1、R2、R3、R4、R5、R6、Ar1和Ar2相同或不同，分别独立的选自H、D、F、取代或未取代的烷基、取代或未取代的环烷基、取代或未取代的芳基、取代或未取代的杂芳基以及取代或未取代的芳氨基中的任一种。
示例性的，含硼衍生物选自如下结构中的任一种。
需要说明的是，上述结构式中的(Ⅰ-x)，是每一种结构的代称，并不是结构式的一部分。其中，x取正整数。
在一些实施例中，主体材料包括含有氘(D)的蒽衍生物，客体材料包括具有热活化延迟性质的材料。
示例性的，含有氘(D)的蒽衍生物的结构式如下所示。
需要说明的是，上述结构式中的(2-x)，是每一种结构的代称，并不是结构式的一部分。其中，x取正整数。
由于氘是重氢，在碳原子上设置氘代，可以增加化学键的稳定性，从而提高主体材料的热稳定性，可以提升发光器件10的寿命。采用具有热活化延迟性质的材料作为客体材料，该类客体材料会利用三线态激子，可以提高发光器件10的发光效率。
需要说明的是，热活化延迟性质的材料是指单重态激子与三重态激子之间的能级差(△EST)较小的材料。
在一些实施例中，如图1A～图3B所示，发光层5的荧光量子产率大于或等于85％。且，发光层5为具有水平取向的膜层。
示例性的，发光层5的荧光量子产率为85％、86％、87％、88％或90％等，此处并不设限。
例如，水平方向与第一方向Y垂直设置，竖直方向与第一方向Y平行设置，通过设置发光层5为具有水平取向的膜层，有利于发光层5出射竖直方向的光，提高发光器件10的出光效率。
在一些实施例中，如图3B所示，发光单元104还包括：红色发光层54，红光发光层 54包括磷光材料，且红色发光层54含有两种第三主体材料。和，发光单元104还包括：绿光发光层53，绿光发光层53包括磷光材料，且绿光发光层5含有两种第四主体材料。
需要说明的是，磷光材料受激发后产生的单重态激子和三重态激子跃迁到基态时都能够发光，使得基于磷光发光的发光器件10的IQE(Internal Quantum Efficiency，内量子效率)达到100％。
示例性的，如图3B所示，红色发光层54含有两种第三主体材料，两种第三主体材料分别为电子型材料和空穴型材料，两种第三主体材料可以形成激基复合物。
示例性的，如图3B所示，绿光发光层53含有两种第四主体材料，两种第四主体材料分别为电子型材料和空穴型材料，两种第四主体材料可以形成激基复合物。
需要说明的是，电子型材料可以看作是电子受体材料，空穴型材料可以看作是电子给体材料。两种材料形成激基复合物，此时，电子受体材料的激发态和电子给体材料的基态相互作用形成一个电荷转移态发光，发出区别于空穴型材料的发射光谱和电子型材料的发射光谱的新的光谱。
因此，两种材料有利于电荷平衡，使激子复合区域向发光层5的中心移动，最终的效果就是，使空穴-电子对更有效在发光层5复合发光，而且激子复合区域向发光层5中心移动，提高发光器件10的效率和寿命。
在一些实施例中，如图1A～图3B所示，发光器件10还包括设置于阳极101和发光单元104之间的空穴传输单元102。空穴传输单元102包括：沿第一方向Y层叠设置的空穴注入层2、第一空穴传输层31和第一电子阻挡层41。其中，第一方向Y为由阳极101指向阴极102的方向。
通过在阳极101和发光单元104之间设置空穴传输单元102，可以提高发光器件10的空穴注入和传输效率，提高发光器件10的发光效率。
在一些实施例中，如图4所示，电荷产生层6包括：沿第一方向Y层叠设置的第二空穴阻挡层82、第二电子传输层92、电子产生层301、空穴产生层302、第二空穴传输层32和第二电子阻挡层42。
在一些实施例中，如图5所示，电荷产生层6包括：沿第一方向Y层叠设置的第二空穴阻挡层82、电子产生层301、空穴产生层302、第二空穴传输层32和第二电子阻挡层42。
电荷产生层6不仅具有连接相邻的两个发光层5的作用，还可以提高电荷的注入和传输功能，其中，电荷代表电子或者空穴。
在一些实施例中，如图4和图5所示，第一空穴传输层31的空穴迁移率，大于第一电子阻挡层41的空穴迁移率。第二空穴传输层32的空穴迁移率，大于第二电子阻挡层42的空穴迁移率。
示例性的，如图4所示，第一空穴传输层31和第一电子阻挡层41相邻设置，第一空穴传输层31的空穴迁移率，大于第一电子阻挡层41的空穴迁移率。第二空穴传输层32和第二电子阻挡层42相邻设置，第二空穴传输层32的空穴迁移率，大于第二电子阻挡层42的空穴迁移率。
也可以说，在相邻设置的空穴传输层3和电子阻挡层4的结构中，空穴传输层3的空穴迁移率，大于电子阻挡层4的空穴迁移率。空穴传输层3包括第一空穴传输层31和第二空穴传输层32，电子阻挡层4包括第一电子阻挡层41和第二电子阻挡层42。
空穴传输层3的空穴迁移率，大于电子阻挡层4的空穴迁移率的设置，增大了相邻设置的空穴传输层3和电子阻挡层4的能级势垒，避免了空穴过多、过快地传输至电子阻挡层4，以解决空穴在电子阻挡层4/发光层5之间累积的问题，改善复合区域靠近电子阻挡层4一侧的情况。有效的避免了空穴在发光层5与电子阻挡层4的界面处堆积，并使空穴更好地向发光层5的内部移动，由此提高了有发光器件10的效率和寿命。
示例性的，空穴传输层3的空穴迁移率的范围为1×10-4cm2/(V.s)～1×10-6cm2/(V.s)，空穴传输层3的空穴迁移率为1×10-4cm2/(V.s)、1×10-5cm2/(V.s)或1×10-6cm2/(V.s)等，此处并不设限。电子阻挡层4的空穴迁移率的范围为1×10-5cm2/(V.s)～1×10-7cm2/(V.s)，电子阻挡层4的空穴迁移率为1×10-5cm2/(V.s)、1×10-6cm2/(V.s)或1×10-7cm2/(V.s)等，此处并不设限。
在一些实施例中，如图4和图5所示，电子阻挡层4的三线态能级T5，大于主体材料的三线态能级，其中，电子阻挡层4包括：第一电子阻挡层41，和第二电子阻挡层42。
在一些示例中，如图4所示，第一个发光层5a与第一电子阻挡层41相邻设置，第一个发光层5a包括第一子发光层51和第二子发光层52，第一子发光层51包括第一主体材料和第一客体材料，第二子发光层52包括第二主体材料和第二客体材料。主体材料包括第一主体材料和第二主体材料，客体材料包括第一客体材料和第二客体材料。第一电子阻挡层41的三线态能级T51，大于第一主体材料的三线态能级T1，即T51>T1。并且，由上述关于第一主体材料的三线态能级T1和第二主体材料的三线态能级T2可知，第一主体材料的三线态能级T1，大于第二主体材料的三线态能级T2，即第一电子阻挡层41的三线态能级T51，大于主体材料的三线态能级。
在一些示例中，如图4所示，第二个发光层5b与第二电子阻挡层42相邻设置，第二个发光层5b包括第一子发光层51和第二子发光层52，同理，第二电子阻挡层42的三线态能级T52，大于主体材料的三线态能级。
示例性的，电子阻挡层4的三线态能级T5大于或等于2.2eV。
通过设置电子阻挡层4的三线态能级T5，大于主体材料的三线态能级，可以使得电子和空穴在发光层5所在的区域形成激子，有利于激子的平衡，从而提高发光器件10的效 率和寿命。
在一些实施例中，如图1A～图5所示，发光器件10还包括设置于阴极102和发光单元104之间的电子传输单元103。电子传输单元103包括：沿第一方向Y层叠设置的第三空穴阻挡层83、第三电子传输层93和电子注入层30。
通过在阴极102和发光单元104之间设置电子传输单元103，可以提高发光器件10的电子注入和传输效率，提高发光器件10的发光效率。
在一些实施例中，如图4所示，阳极101在第一方向Y上的尺寸d1范围为80nm～200nm。
可以理解的是，阳极101在第一方向Y上的尺寸d1即为阳极101的厚度。以下同理，即以下关于膜层在第一方向Y上的尺寸均是指该膜层的厚度。
示例性的，阳极101在第一方向Y上的尺寸d1为80nm、120nm、150nm或200nm等，此处并不设限。
示例性的，阳极101包括具有高功函数的材料，当用于底发射结构的发光器件10时，可以采用IZO(氧化铟锌)或ITO(氧化铟锡)等作为阳极101。当用于顶发射结构的发光器件10时，可以采用透明氧化物层的复合结构作为阳极101，例如，Ag(银)/ITO(氧化铟锡)或Ag(银)/IZO(氧化铟锌)等。当采用透明氧化物层的复合结构作为阳极101时，金属层的厚度为80nm～100nm，金属氧化物的厚度为5nm～10nm。例如，金属层Ag(银)的厚度为80nm、90nm或100nm等，此处并不设限。金属氧化物ITO(氧化铟锡)的厚度为5nm或10nm等，此处并不设限。阳极101可见区平均反射率为85％～95％。
需要说明的是，底发射结构的发光器件10，是指将阳极101作为透明电极，阴极102作为反射电极。顶发射结构的发光器件10，是指将阳极101作为反射电极，阴极102作为透明电极。
在一些实施例中，如图4所示，空穴注入层2在第一方向Y上的尺寸d2范围为5nm～20nm。
示例性的，空穴注入层2在第一方向Y上的尺寸d2为5nm、10nm、15nm或20nm等，此处并不设限。
空穴注入层2主要作用为降低空穴注入势垒，提高空穴注入效率。例如，空穴注入层2的材料包括HATCN(其结构参照后方的PD所示的结构式)或CuPc(酞菁铜)等。也可以对空穴注入层2的材料进行p型掺杂，p型掺杂材料例如包括NPB:F4TCNQ或TAPC:MnO3等，掺杂浓度范围为0.5％～10％。
在一些实施例中，如图4所示，空穴传输层3在第一方向Y上的尺寸d3范围为10nm～100nm。空穴传输层3包括第一空穴传输层31和第二空穴传输层32。
示例性的，第一空穴传输层31在第一方向Y上的尺寸d3为10nm、50nm、70nm或100nm等，此处并不设限。
示例性的，第二空穴传输层32在第一方向Y上的尺寸d3为10nm、40nm、80nm或100nm等，此处并不设限。
需要说明的是，第一空穴传输层31和第二空穴传输层32在第一方向Y上的尺寸d3可以相等，也可以不相等。
示例性的，空穴传输层3的材料包括：空穴迁移率较高的咔唑类或芳胺类材料。空穴传输层3的材料的分子最高被占据轨道(HOMO)能级在-5.2eV～-5.6eV之间。例如，空穴传输层3的材料的分子最高被占据轨道(HOMO)能级为-5.2eV、-5.3eV、-5.4eV、-5.5eV或-5.6eV等，此处并不设限。
示例性的，通过蒸镀制备空穴传输层3。
在一些实施例中，如图4所示，电子阻挡层4在第一方向Y上的尺寸d4范围为20nm～70nm。电子阻挡层4包括第一电子阻挡层41和第二电子阻挡层42。
示例性的，第一电子阻挡层41在第一方向Y上的尺寸d4为20nm、40nm、50nm或70nm等，此处并不设限。
示例性的，第二电子阻挡层42在第一方向Y上的尺寸d4为20nm、30nm、60nm或70nm等，此处并不设限。
需要说明的是，第一电子阻挡层41和第二电子阻挡层42在第一方向Y上的尺寸d4可以相等，也可以不相等。
电子阻挡层4的主要作用为传递空穴，阻挡电子以及发光层5内产生的激子。
在一些实施例中，如图4所示，发光层5在第一方向Y上的尺寸d5范围为5nm～45nm。
示例性的，发光层5在第一方向Y上的尺寸d5为5nm、15nm、30nm或45nm等，此处并不设限。
示例性的，如图4所示，发光层5包括第一子发光层51和第二子发光层52，第一子发光层51在第一方向Y上的尺寸d51与第二子发光层52在第一方向Y上的尺寸d52可以相等，也可以不相等。
例如，第一子发光层51在第一方向Y上的尺寸d51为6nm，第二子发光层52在第一方向Y上的尺寸d52为10nm。
可以理解的是，第一子发光层51在第一方向Y上的尺寸d51与第二子发光层52在第一方向Y上的尺寸d52的加和，即为发光层5在第一方向Y上的尺寸d5，即d5＝d51+d52。
第一个发光层5a和第二个发光层5b在第一方向Y上的尺寸d5可以相等，也可以不相等。
示例性的，第一子发光层51包括第一主体材料和第一客体材料，第一客体材料的掺杂比例为0.5％～20％。例如，第一客体材料的掺杂比例为0.5％、5％、8％、15％、17％或20％等，此处并不设限。
第二子发光层52包括第二主体材料和第二客体材料，第二客体材料掺杂比例可以参照第一客体材料的掺杂比例，此处不再赘述。
在一些实施例中，如图4所示，空穴阻挡层8在第一方向Y上的尺寸d6范围为2nm～20nm。空穴阻挡层8包括第二空穴阻挡层82和第三空穴阻挡层83。
示例性的，第二空穴阻挡层82在第一方向Y上的尺寸d6为2nm、10nm、15nm或20nm等，此处并不设限。
示例性的，第三空穴阻挡层83在第一方向Y上的尺寸d6为2nm、8nm、16nm或20nm等，此处并不设限。
需要说明的是，第二空穴阻挡层82和第三空穴阻挡层83在第一方向Y上的尺寸d4可以相等，也可以不相等。
空穴阻挡层8主要作用为传递电子，阻挡空穴以及发光层5内产生的激子。
在一些实施例中，如图4所示，电子传输层9在第一方向Y上的尺寸d7范围为20nm～70nm。电子传输层9包括第二电子传输层92和第三电子传输层93。
示例性的，第二电子传输层92在第一方向Y上的尺寸d6为20nm、50nm、60nm或70nm等，此处并不设限。
示例性的，第三电子传输层93在第一方向Y上的尺寸d6为20nm、30nm、40nm或70nm等，此处并不设限。
需要说明的是，第二电子传输层92和第三电子传输层93在第一方向Y上的尺寸d4可以相等，也可以不相等。
在一些实施例中，如图4所示，电子注入层30在第一方向Y上的尺寸d8范围为0.5nm～10nm。电子产生层301在第一方向Y上的尺寸d9范围为5nm～20nm。空穴产生层302在第一方向Y上的尺寸d10范围为5nm～20nm。
示例性的，电子注入层30在第一方向Y上的尺寸d8为0.5nm、5nm、7nm或10nm等，此处并不设限。
示例性的，电子产生层301在第一方向Y上的尺寸d9为5nm、15nm、18nm或20nm等，此处并不设限。
示例性的，电子产生层301采用电子传输材料，例如，电子产生层301采用具有磷氧双键的蒽衍生物或者吖嗪类材料，与金属Li(锂)或Yb(镱)通过共蒸形成。
示例性的，空穴产生层302在第一方向Y上的尺寸d10为5nm、10nm、15nm或20nm等，此处并不设限。
在一些实施例中，如图4所示，阴极102在第一方向Y上的尺寸d11范围为10nm～30nm。
示例性的，阴极102在第一方向Y上的尺寸d11为10nm、15nm、20nm或30nm等，此处并不设限。
示例性的，当用于顶发射结构的发光器件10时，采用Mg(镁)、Ag(银)或Al(铝)通过蒸镀工艺形成阴极102。也可以采用MgAg(镁银)合金形成阴极102，MgAg(镁银)合金的质量比范围为3:7～1:9。采用上述金属形成阴极102在波长为530nm处的光透过率范围为50％～60％。
在一些实施例中，如图6所示，阴极102远离阳极101的一侧还设置有电阻改善层107。电阻改善层107的材料包括含有氟的有机材料。
示例性的，电阻改善层107的材料为具有低亲和力、低粘附性的材料，这样有利于阴极102的图案化，方便形成辅助阴极108，关于辅助阴极108的介绍可以参见后续内容，此处不再赘述。
示例性的，含有氟的有机材料的结构可以选自如下结构式中的任一种。

示例性的，采用金属掩膜版(FMM)，通过蒸镀工艺形成电阻改善层107。
电阻改善层107的设置，可以降低阳极101和阴极102压差大的问题。
为了对本公开实施例的技术效果进行客观评价，以下，通过如下实验例和对比例对本公开所提供的技术方案进行详细的描述。
具体的，对比例、实施例1、实施例2和实施例3所提供的发光器件10的膜层厚度和 膜层材料如下述表1所示。实施例1和实施例2所表示的发光器件10的结构可以参照图1A所示(其中，电荷产生层6的结构可以参照图5中的电荷产生层6的结构所示)，实施例3所表示的发光器件10的结构可以参照图5所示。
其中，空穴注入层2表示为HIL、第一空穴传输层31表示为HTL1、第一电子阻挡层41表示为EBL1、第一个发光层5a表示为EML1，第二空穴阻挡层82表示为HBL2、电子产生层301表示为N-CGL、空穴产生层302表示为P-CGL、第二空穴传输层32表示为HTL2、第二电子阻挡层42表示为EBL2、第二个发光层5b表示为EML2，第三空穴阻挡层83表示为HBL3、第三电子传输层93表示为ETL3、电子注入层30表示为EIL。
需要说明的是，例如实施例3的HIL为10nm，表示实施例3的空穴注入层2的厚度为10nm，其他同理。实施例1～实施例3各膜层的厚度一致。对比例的膜层的厚度根据微腔效应进行设计。
需要说明的是，表1中的PD、HT-1、HT-2、BH、BH-1、BD、BD-1、HB-1、ET-1、LiQ、Yb、Mg:Ag表示该膜层形成用的材料，Mg:Ag(2:8)表示阴极102材料中Mg(镁):Ag(银)合金的质量比为2:8。BH:BD(3％)表示BD的结构式所表示的材料在EML(包括EML1和EML2)中的质量占比为3％，其他同理。其中，PD、HT-1、HT-2、BH、BH-1、BD、BD-1、HB-1和ET-1所表示的结构式如下所示。

表1
上述对比例和实施例1～实施例3所表示的发光器件10的性能数据如表2所示。
表2
通过表2可以看出，采用本公开的技术方案提供的发光器件10的器件寿命和效率均有很大的提高。其中，色坐标是发光器件10表征颜色的指标，表明本公开的技术方案提供的发光器件10的色彩饱和度较高。
本公开的另一方面提供一种显示基板100，如图6所示，显示基板100包括如上任一个实施例所提供的发光器件10。发光器件10包括相对设置的阳极101和阴极102。
如图6所示，显示基板100还包括：基板50和设置于基板50一侧的像素界定层60，以及由像素界定层60限定的多个像素凹槽70，多个像素凹槽70的每个像素凹槽70内设置有一个发光器件10，多个发光器件10的阴极102为整层设置。也就是说，多个发光器件10的阴极102为一个膜层。
需要说明的是，如图3B所示，发光器件10包括发射蓝光的发光层5、红色发光层54和绿色发光层53，阳极101包括与发光层5、红色发光层54和绿色发光层53一一对应的第一阳极、第二阳极和第三阳极。
其中，阴极102远离阳极101的一侧还设置有多个辅助电极108，多个辅助电极108中的每个辅助电极108在基板50上的正投影，位于像素界定层60在基板50上的正投影内。
也就是说，像素界定层60所在区域为非发光区域SS1，发光器件10所在的像素凹槽70的区域为发光区域SS2，辅助电极108设置于非发光区域SS1，这样可以避免影响出光效率。
通过在非发光区域SS1形成辅助电极108，不影响发光区域SS2阴极102电极透过率 的情况下，改善面电阻大、亮度不均、发光器件10的顶部与底部较大的压差问题。
示例性的，基板50可以是阵列基板，阵列基板即包括薄膜晶体管(Thin Film Transistor，TFT)阵列，示例性地，阵列基板包括衬底，以及依次叠设于衬底上的有源层、栅极绝缘层、栅金属层、层间绝缘层、源漏金属层和平坦层，阳极101设置于平坦层远离衬底的一侧。在另一些示例中，上述基板50也可以是衬底基板，显示基板100还包括设置于基板50和阳极101之间的其他膜层，例如有源层、栅极绝缘层、栅金属层、层间绝缘层、源漏金属层和平坦层。
在一些实施例中，如图6所示，辅助电极108在第一方向Y上的尺寸d12范围为10nm～20nm，第一方向Y为由阳极101指向阴极102的方向。
示例性的，辅助电极108在第一方向Y上的尺寸d12为10nm、15nm或20nm等，此处并不设限。
本公开提供的发光基板100的有益效果，与本公开第一方面所提供的发光器件10的有益效果相同，此处不再赘述。
本公开的一些实施例还提供一种显示装置1000，如图7所示，包括上述实施例所提供的显示基板100。
本公开实施例所提供的显示装置1000可以是显示不论运动(例如，视频)还是固定(例如，静止图像)的且不论文字还是图像的任何装置。更明确地说，预期所述实施例可实施在多种电子装置中或与多种电子装置关联，所述多种电子装置例如(但不限于)移动电话、无线装置、个人数据助理(PDA)、手持式或便携式计算机、GPS接收器/导航器、相机、MP4视频播放器、摄像机、游戏控制台、手表、时钟、计算器、电视监视器、平板显示器、计算机监视器、汽车显示器(例如，里程表显示器等)、导航仪、座舱控制器和/或显示器、相机视图的显示器(例如，车辆中后视相机的显示器)、电子相片、电子广告牌或指示牌、投影仪、建筑结构、包装和美学结构(例如，对于一件珠宝的图像的显示器)等。
上述显示装置1000的有益效果与本公开上述任一实施例所提供的发光器件10的有益效果相同，此处不再赘述。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (21)

  1. 一种发光器件，其特征在于，包括：相对设置的阳极和阴极，以及设置于所述阳极和所述阴极之间的发光单元；
    其中，所述发光单元包括：至少两个发光层和设置于所述至少两个发光层中的相邻的两个发光层之间的电荷产生层；
    所述至少两个发光层中的至少一个发光层包括：第一子发光层和第二子发光层，所述第一子发光层比所述第二子发光层靠近所述阳极；
    所述第一子发光层包括第一主体材料和第一客体材料，所述第二子发光层包括第二主体材料和第二客体材料，所述第一主体材料的三线态能级，大于所述第二主体材料的三线态能级；且，主体材料的三线态能级大于客体材料的三线态能级；其中，所述主体材料包括所述第一主体材料和所述第二主体材料，所述客体材料包括所述第一客体材料和所述第二客体材料。
  2. 根据权利要求1所述的发光器件，其特征在于，所述第一主体材料的三线态能级，与所述第二主体材料的三线态能级的差值大于0.1eV。
  3. 根据权利要求1或2所述的发光器件，其特征在于，所述至少两个发光层中的一个所述发光层发射光的波长峰值，与所述至少两个发光层中的其余所述发光层发射光的波长峰值的差值，均小于或等于10nm。
  4. 根据权利要求1～3任一项所述的发光器件，其特征在于，所述至少两个发光层中的每个发光层发射蓝光；所述发光层的主体材料和客体材料包含稠环化合物，所述稠环化合物包含有三个或三个以上的苯环。
  5. 根据权利要求4所述的发光器件，其特征在于，所述稠环化合物包括取代或未取代的蒽、取代或未取代的菲、取代或未取代的芘和取代或未取代的芴中的任一种。
  6. 根据权利要求4或5所述的发光器件，其特征在于，所述发光层的荧光量子产率大于或等于85％；且，所述发光层为具有水平取向的膜层。
  7. 根据权利要求4～6任一项所述的发光器件，其特征在于，所述主体材料包括蒽衍生物；所述客体材料包括芘衍生物和含硼衍生物中的任一种。
  8. 根据权利要求7所述的发光器件，其特征在于，所述含硼衍生物选自如下通式(Ⅰ)所示结构中的任一种；
    其中，X选自O、S和NR6；R1、R2、R3、R4、R5、R6、Ar1和Ar2相同或不同，分别独立的选自H、D、F、取代或未取代的烷基、取代或未取代的环烷基、取代或未取代的芳基、取代或未取代的杂芳基以及取代或未取代的芳氨基中的任一种。
  9. 根据权利要求4～8任一项所述的发光器件，其特征在于，所述主体材料包括含有氘的蒽衍生物；所述客体材料包括具有热活化延迟性质的材料。
  10. 根据权利要求1～9任一项所述的发光器件，其特征在于，所述发光单元还包括：红色发光层，所述红色发光层包括磷光材料，且所述红色发光层含有两种第三主体材料；和，
    所述发光单元还包括：绿光发光层，所述绿光发光层包括磷光材料，且所述绿光发光层含有两种第四主体材料。
  11. 根据权利要求1～10任一项所述的发光器件，其特征在于，还包括设置于阳极和发光单元之间的空穴传输单元；
    所述空穴传输单元包括：沿第一方向层叠设置的空穴注入层、第一空穴传输层和第一电子阻挡层；其中，所述第一方向为由所述阳极指向所述阴极的方向。
  12. 根据权利要求11所述的发光器件，其特征在于，所述电荷产生层包括：沿所述第一方向层叠设置的第二空穴阻挡层、第二电子传输层、电子产生层、空穴产生层、第二空穴传输层和第二电子阻挡层；或，
    所述电荷产生层包括：沿所述第一方向层叠设置的第二空穴阻挡层、电子产生层、空穴产生层、第二空穴传输层和第二电子阻挡层。
  13. 根据权利要求12所述的发光器件，其特征在于，所述第一空穴传输层的空穴迁移率，大于所述第一电子阻挡层的空穴迁移率；和/或，
    所述第二空穴传输层的空穴迁移率，大于所述第二电子阻挡层的空穴迁移率。
  14. 根据权利要求13所述的发光器件，其特征在于，所述电子阻挡层的三线态能级，大于所述主体材料的三线态能级；其中，所述电子阻挡层包括：所述第一电子阻挡层和所述第二电子阻挡层。
  15. 根据权利要求14所述的发光器件，其特征在于，还包括设置于阴极和发光单元之间的电子传输单元；
    所述电子传输单元包括：沿所述第一方向层叠设置的第三空穴阻挡层、第三电子传输层和电子注入层。
  16. 根据权利要求15所述的发光器件，其特征在于，
    所述阳极在所述第一方向上的尺寸范围为80nm～200nm；
    所述空穴注入层在所述第一方向上的尺寸范围为5nm～20nm；
    所述空穴传输层在所述第一方向上的尺寸范围为10nm～100nm；
    所述电子阻挡层在所述第一方向上的尺寸范围为20nm～70nm；
    所述发光层在所述第一方向上的尺寸范围为5nm～45nm；
    所述空穴阻挡层在所述第一方向上的尺寸范围为2nm～20nm；
    所述电子传输层在所述第一方向上的尺寸范围为20nm～70nm；
    所述电子注入层在所述第一方向上的尺寸范围为0.5nm～10nm；
    所述电子产生层在所述第一方向上的尺寸范围为5nm～20nm；
    所述空穴产生层在所述第一方向上的尺寸范围为5nm～20nm；
    所述阴极在所述第一方向上的尺寸范围为10nm～30nm；
    其中，所述空穴传输层包括：所述第一空穴传输层和所述第二空穴传输层；所述空穴阻挡层包括：所述第二空穴阻挡层和所述第三空穴阻挡层；所述电子传输层包括：所述第二电子传输层和所述第三电子传输层。
  17. 根据权利要求1～16任一项所述的发光器件，其特征在于，所述阴极远离所述阳极的一侧还设置有电阻改善层。
  18. 根据权利要求17所述的发光器件，其特征在于，所述电阻改善层的材料包括含有氟的有机材料。
  19. 一种显示基板，其特征在于，包括：如权利要求1～18任一项所述的发光器件，所述发光器件包括相对设置的阳极和阴极；
    还包括：基板和设置于所述基板一侧的像素界定层，以及由所述像素界定层限定的多个像素凹槽；所述多个像素凹槽中的每个像素凹槽内设置有一个所述发光器件；多个所述发光器件的所述阴极为整层设置；
    其中，所述阴极远离所述阳极的一侧还设置有多个辅助电极，所述多个辅助电极中的每个辅助电极在所述基板上的正投影，位于所述像素界定层在所述基板上的正投影内。
  20. 根据权利要求19所述的显示基板，其特征在于，所述辅助电极在第一方向上的尺寸范围为10nm～20nm；所述第一方向为由所述阳极指向所述阴极的方向。
  21. 一种显示装置，其特征在于，包括：如权利要求19或20所述的显示基板。
PCT/CN2023/108250 2022-07-29 2023-07-19 发光器件、显示基板及显示装置 WO2024022202A1 (zh)

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