WO2018214205A1 - 彩色微发光二极管阵列基板的制作方法 - Google Patents

彩色微发光二极管阵列基板的制作方法 Download PDF

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Publication number
WO2018214205A1
WO2018214205A1 PCT/CN2017/089265 CN2017089265W WO2018214205A1 WO 2018214205 A1 WO2018214205 A1 WO 2018214205A1 CN 2017089265 W CN2017089265 W CN 2017089265W WO 2018214205 A1 WO2018214205 A1 WO 2018214205A1
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Prior art keywords
micro
light
emitting diode
color
transferred
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English (en)
French (fr)
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陈黎暄
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/551,285 priority Critical patent/US10096740B1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a color micro LED array substrate.
  • a micro-light-emitting diode is a device with a size ranging from a few micrometers to a few hundred micrometers. Since it is much smaller than a normal LED, it is possible to use a single LED as a pixel (Pixel) for display.
  • the Micro LED display is a display that uses a high-density Micro LED array as a display pixel array to realize image display. Like a large-sized outdoor LED display, each pixel can be addressed and individually driven to be lit. The reduced version of the outdoor LED display reduces the pixel distance from millimeters to micrometers.
  • Micro LED displays and organic light-emitting diode (OLED) displays are self-luminous displays, but compared to micro LED displays. OLED displays also have the advantages of better material stability, longer life, no image imprinting, etc., and are considered to be the biggest competitors of OLED displays.
  • the Micro LED device Due to lattice matching, the Micro LED device must first be grown on the supply substrate by molecular beam epitaxy, and then the bare LED is supplied from the bare LED by the laser lift-off (LLO) technology. The substrate is separated, and then transferred to a receiving substrate on which a circuit pattern has been prepared by a micro transfer printing (NTP) technique to form a Micro LED array, thereby forming a Micro LED display panel.
  • LLO laser lift-off
  • NTP micro transfer printing
  • the basic principle of micro transfer is roughly: using a patterned transfer head, such as a polydimethylsiloxane (PDMS) type transfer head having a convex structure, through a sticky PDMS
  • the transfer layer adsorbs the Micro LED bare chip from the supply substrate, and then aligns the PDMS transfer head with the receiving substrate, and then attaches the Micro LED bare chip adsorbed by the PDMS transfer head to the preset position of the receiving substrate. Then, the PDMS transfer head is peeled off from the receiving substrate to complete the transfer of the Micro LED bare chip to form a Micro LED array.
  • a patterned transfer head such as a polydimethylsiloxane (PDMS) type transfer head having a convex structure
  • the transfer layer adsorbs the Micro LED bare chip from the supply substrate, and then aligns the PDMS transfer head with the receiving substrate, and then attaches the Micro LED bare chip adsorbed by the PDMS transfer head to the preset position of
  • the prior art has proposed a chip bonding technique to transfer a micro LED array, that is, a supply substrate of a micro LED is directly connected to a receiving substrate.
  • Bit and bonding eliminates the intermediate steps of the transfer head, but it is more difficult to colorize the LED display array because most of the Micro LEDs grown on a supply substrate are single colors, so that the Micro LEDs bound to the substrate are received.
  • the array is monochromatic, and thus can only be displayed in a single color, such as a blue display, and cannot be arranged in a multi-color Micro LED for color display, such as red, green, blue (R/G/B) three-color Micro LED interleaving. arrangement.
  • the size of the supply substrate is currently dominated by 2-4 inches, thereby limiting the number of Micro LEDs that are transferred at one time.
  • An object of the present invention is to provide a method for fabricating a color micro-light-emitting diode array substrate, which selectively transfers micro-light-emitting diodes on supply substrates corresponding to different colors to a receiving substrate to form a plurality of monochromatic micro-lights of different colors.
  • a diode array is used to fabricate a color micro LED array substrate.
  • the present invention provides a method for fabricating a color micro LED array substrate, the color micro LED array substrate comprising a receiving substrate, and a color micro LED array disposed on the receiving substrate;
  • the receiving substrate comprises a plurality of monochrome pixel regions respectively corresponding to different colors
  • the color micro light emitting diode array comprises a plurality of monochromatic micro light emitting diode arrays of different colors
  • the monochromatic micro light emitting diode array of each color is disposed corresponding to the color Monochromatic pixel area
  • the method for fabricating the monochromatic micro-light-emitting diode array of each color on the color micro-light-emitting diode array substrate comprises the following steps:
  • Step S1 providing a supply substrate corresponding to a desired color, and a receiving substrate, wherein the supply substrate is provided with a plurality of micro light emitting diodes of the desired color; and corresponding to the color pixels of the receiving substrate corresponding to a desired color a region, a region to be transferred is divided on the supply substrate, a micro light-emitting diode on the region to be transferred of the supply substrate is set as a micro-light-emitting diode to be transferred, and a metal electrode is formed on each micro-light-emitting diode to be transferred;
  • a plurality of driving electrodes are disposed on each of the monochrome pixel regions of the receiving substrate;
  • Step S2 aligning the supply substrate with the receiving substrate, and correspondingly placing a metal electrode on each of the micro-light-emitting diodes to be transferred into a monochrome pixel corresponding to a desired color of the receiving substrate.
  • a metal electrode on each of the micro-light-emitting diodes to be transferred is associated with the driving electrode on the driving electrode of the region, so that the micro-light-emitting diode to be transferred is bound to the monochrome pixel corresponding to the desired color of the receiving substrate.
  • Step S3 laser-irradiating all the micro-light-emitting diodes to be transferred in the plurality of micro-light-emitting diodes on the supply substrate, so that all the micro-light-emitting diodes to be transferred are detached from the supply substrate and fixed to the monochrome pixels corresponding to the desired color.
  • the fabrication of the monochromatic micro-light-emitting diode array of the color is completed.
  • the plurality of micro light-emitting diodes are selectively irradiated by using a large-area laser light source in combination with a mask plate, so that only the micro-light-emitting diodes to be irradiated are irradiated with laser light.
  • the plurality of micro-light-emitting diodes are selectively irradiated by using a plurality of directional laser light sources, specifically, by setting the plurality of directional laser light sources corresponding to the micro-light-emitting diodes to be transferred on the supply substrate, Therefore, only the transfer micro-light emitting diode is irradiated with laser light.
  • a metal electrode is formed on each of the micro-light-emitting diodes to be transferred by a photolithography process.
  • the plurality of driving electrodes are provided with low melting point pads.
  • the specific process of binding the to-be-transferred micro-light-emitting diode to the receiving substrate is: after the micro-light emitting diode to be transferred is placed on the driving electrode, heat treatment is performed to make the driving electrode The upper low melting point pad is melted, thereby bonding the metal electrode of the micro light emitting diode to be transferred to the driving electrode, thereby binding the micro light emitting diode to be transferred to the monochrome pixel corresponding to the desired color of the receiving substrate On the area.
  • the color micro-light-emitting diode arrays of different colors on the color micro-light-emitting diode array substrate are sequentially formed in front and rear;
  • the sum of the thickness of the metal electrode of the monochromatic micro-light-emitting diode array fabricated later and the height of the corresponding driving electrode on the receiving substrate is greater than the height of the previously fabricated monochromatic micro-light-emitting diode array on the receiving substrate.
  • the micro-light emitting diode to be transferred is irradiated with laser light from the supply substrate side or from the receiving substrate side.
  • the receiving substrate comprises three monochrome pixel regions, respectively, which are red, green and blue pixel regions, and the color micro light emitting diode array correspondingly comprises three different color monochromatic micro light emitting diode arrays.
  • the three monochromatic micro light emitting diode arrays are respectively red, green, and blue micro light emitting diode arrays.
  • the receiving substrate is a TFT array substrate.
  • the present invention also provides a method for fabricating a color micro LED array substrate, the color micro LED array substrate comprising a receiving substrate, and a color microfade disposed on the receiving substrate a photodiode array; the receiving substrate comprises a plurality of monochrome pixel regions respectively corresponding to different colors, the color micro light emitting diode array comprising a plurality of monochromatic micro light emitting diode arrays of different colors, and a single color micro light emitting diode of each color The array is disposed on a monochrome pixel area corresponding to the color;
  • the method for fabricating the monochromatic micro-light-emitting diode array of each color on the color micro-light-emitting diode array substrate comprises the following steps:
  • Step S1 providing a supply substrate corresponding to a desired color, and a receiving substrate, wherein the supply substrate is provided with a plurality of micro light emitting diodes of the desired color; and corresponding to the color pixels of the receiving substrate corresponding to a desired color a region, a region to be transferred is divided on the supply substrate, a micro light-emitting diode on the region to be transferred of the supply substrate is set as a micro-light-emitting diode to be transferred, and a metal electrode is formed on each micro-light-emitting diode to be transferred;
  • a plurality of driving electrodes are disposed on each of the monochrome pixel regions of the receiving substrate;
  • Step S2 aligning the supply substrate with the receiving substrate, and correspondingly placing a metal electrode on each of the micro-light-emitting diodes to be transferred on a driving electrode on a monochrome pixel region corresponding to a desired color of the receiving substrate.
  • Step S2 aligning the supply substrate with the receiving substrate, and correspondingly placing a metal electrode on each of the micro-light-emitting diodes to be transferred on a driving electrode on a monochrome pixel region corresponding to a desired color of the receiving substrate.
  • the metal electrode on each of the micro-light-emitting diodes to be transferred to the driving electrode so that the micro-light-emitting diode to be transferred is bound to the monochromatic pixel area of the receiving substrate corresponding to the desired color;
  • Step S3 laser-irradiating all the micro-light-emitting diodes to be transferred in the plurality of micro-light-emitting diodes on the supply substrate, so that all the micro-light-emitting diodes to be transferred are detached from the supply substrate and fixed to the monochrome pixels corresponding to the desired color.
  • Step S3 laser-irradiating all the micro-light-emitting diodes to be transferred in the plurality of micro-light-emitting diodes on the supply substrate, so that all the micro-light-emitting diodes to be transferred are detached from the supply substrate and fixed to the monochrome pixels corresponding to the desired color.
  • a metal electrode is formed on each of the micro-light-emitting diodes to be transferred by a photolithography process
  • the plurality of driving electrodes are provided with a low melting point pad.
  • the present invention provides a method for fabricating a color micro-light-emitting diode array substrate, wherein a color micro-light-emitting diode array is formed by fabricating a plurality of monochromatic micro-light-emitting diode arrays of different colors on a receiving substrate, wherein For the fabrication of a monochromatic micro-light-emitting diode array of each color, combined with a bonding technique and a Laser Lift Off technology, a metal electrode is selectively formed on a micro-light emitting diode of a specific region on the supply substrate, thereby selectively Binding the micro-light emitting diode of the specific region to the receiving substrate, and selectively irradiating the micro-light emitting diode of the specific region with laser light, so that the micro-light emitting diode of the specific region is bound and laser-annealed and supplied to the substrate Separating, forming a monochromatic micro-light-emitting diode array on the
  • FIG. 1 is a schematic flow chart of fabricating each of the monochromatic micro-light-emitting diode arrays in the method for fabricating a color micro-light-emitting diode array substrate according to the present invention
  • FIG. 2 is a schematic diagram of a step S1 of fabricating each of the monochromatic micro-light-emitting diode arrays in the method of fabricating the color micro-light-emitting diode array substrate of the present invention
  • FIG. 3 is a schematic diagram of a step S2 of fabricating each of the monochromatic micro-light-emitting diode arrays in the method of fabricating the color micro-light-emitting diode array substrate of the present invention
  • FIG. 4 is a schematic diagram of a step S3 of fabricating each of the monochromatic micro-light-emitting diode arrays in the method of fabricating the color micro-light-emitting diode array substrate of the present invention
  • FIG. 5 is a schematic diagram of selectively irradiating a plurality of micro-light emitting diodes by using a large-area laser light source in combination with a mask plate in step S3 shown in FIG. 4;
  • FIG. 6 is a schematic diagram of selectively irradiating a plurality of micro light emitting diodes by using a plurality of directional laser light sources in step S3 shown in FIG. 4;
  • step S10 is a schematic diagram of step S10 of a preferred embodiment of a method of fabricating a color micro LED array substrate according to the present invention.
  • step S20 is a schematic diagram of step S20 of a preferred embodiment of a method of fabricating a color micro LED array substrate according to the present invention.
  • step S30 is a schematic diagram of step S30 of a preferred embodiment of a method of fabricating a color micro LED array substrate of the present invention.
  • the present invention provides a method for fabricating a color micro-light-emitting diode array substrate.
  • the color micro-light-emitting diode array substrate includes a receiving substrate 20 and a color micro-light emitting diode array disposed on the receiving substrate 20; the receiving substrate 20 includes a plurality of monochrome pixel regions respectively corresponding to different colors, the color micro light emitting diode array comprising a plurality of monochromatic micro light emitting diode arrays of different colors, each color monochromatic micro light emitting diode array being disposed in a single color corresponding to the color On the pixel area.
  • the manufacturing method of the micro light emitting diode array includes the following steps:
  • Step S1 as shown in FIG. 2, providing a supply substrate 10 corresponding to a desired color and a receiving substrate 20, wherein the supply substrate 10 is provided with a plurality of micro light emitting diodes 41 of the desired color; corresponding to the receiving substrate a monochrome pixel region corresponding to a desired color, a region to be transferred is divided on the supply substrate 10, and the micro-light-emitting diode 41 on the region to be transferred of the supply substrate 10 is set as a micro-light-emitting diode to be transferred.
  • a plurality of driving electrodes 21 are disposed on each of the monochrome pixel regions of the receiving substrate 20.
  • the metal electrode 51 is formed on each of the micro-light-emitting diodes to be transferred by a photolithography process.
  • Step S2 as shown in FIG. 3, the supply substrate 10 is aligned with the receiving substrate 20, and the metal electrodes 51 on each of the micro-light-emitting diodes to be transferred are correspondingly placed on the receiving substrate 20 in a desired color.
  • the metal electrode 51 on each of the micro-light-emitting diodes to be transferred is correspondingly bonded to the driving electrode 21, so that the pair of micro-light-emitting diodes to be transferred are bound to the receiving substrate 20 Should be on the monochrome pixel area of the desired color.
  • the plurality of driving electrodes 21 are provided with low melting point pads.
  • the specific process of binding the to-be-transferred micro-light-emitting diode to the receiving substrate 20 is: after the micro-light emitting diode to be transferred is placed on the driving electrode 21, heating is performed. Processing, so that the low melting point pad on the driving electrode 21 is melted, thereby bonding the metal electrode 51 of the micro light emitting diode to be transferred to the driving electrode 21, thereby binding the micro light emitting diode to be transferred to the receiving substrate 20. On a monochrome pixel area that corresponds to the desired color.
  • Step S3 as shown in FIG. 4, laser irradiation is performed on all the micro-light-emitting diodes to be transferred in the plurality of micro-light-emitting diodes 41 on the supply substrate 10, so that all the micro-light-emitting diodes to be transferred are detached from the supply substrate 10 and fixed at The fabrication of a monochromatic micro-light-emitting diode array of that color is completed on a monochrome pixel area corresponding to the desired color.
  • the large-area laser light source 61 is used and the plurality of micro-light-emitting diodes 41 are selectively irradiated in combination with the mask 70, so that only the micro-light-emitting diodes are to be irradiated. Irradiation. or,
  • the plurality of micro-light-emitting diodes 41 are selectively irradiated by using a plurality of directional laser light sources 62 having a small directional light spot width, specifically by using the plurality of directional lasers.
  • the light source 62 is disposed corresponding to the micro light-emitting diode to be transferred on the supply substrate 10, so that only the light-emitting diode to be transferred is subjected to laser irradiation.
  • the micro-light-emitting diode to be transferred may be laser-irradiated from the side of the supply substrate 10 or the side of the receiving substrate 20, which is not limited herein.
  • the monochromatic micro-light-emitting diode arrays of different colors on the color micro-light-emitting diode array substrate are sequentially formed in front and rear; then, for the monochrome micro-production
  • the sum of the thickness of the metal electrode 51 of the LED array and the height of the corresponding driving electrode 21 on the receiving substrate 20 is greater than the height of the previously fabricated monochromatic micro-light emitting diode array on the receiving substrate 20, thereby preventing the previous production order
  • the color micro-light-emitting diode array blocks the bonding of the metal electrodes 51 of the post-produced monochromatic micro-light-emitting diode array to the corresponding driving electrodes 21.
  • the receiving substrate 20 is a TFT array substrate, and after all the monochromatic micro-light emitting diode arrays of different colors are completed on the receiving substrate 20, the color micro-light emitting diode display can be further used for color display.
  • a color micro-light-emitting diode array is formed by fabricating a plurality of monochromatic micro-light-emitting diode arrays of different colors on the receiving substrate 20, wherein a monochrome micro-color for each color
  • the fabrication of the LED array in combination with the bonding technique and the laser shedding technique, selectively forms a metal electrode 52 on the micro-light emitting diode 41 of a specific region on the supply substrate 10, thereby selectively bonding the micro-emitting diode 41 of the specific region.
  • the micro-light-emitting diode 41 of the specific region is selectively irradiated with laser light, so that the micro-light-emitting diode 41 of the specific region is separated from the supply substrate 10 by bonding and laser annealing, and the substrate is received.
  • a monochromatic micro-light-emitting diode array is formed on the 20, thereby realizing the fabrication of a monochromatic micro-light-emitting diode array of different colors on the substrate 20, and the manufacturing method is simple and easy.
  • the receiving substrate 20 includes three monochromatic pixel regions, respectively, which are red, green, and blue pixels.
  • the color micro-light-emitting diode array correspondingly comprises three different color monochromatic micro-light-emitting diode arrays, respectively, which are red, green and blue micro-light emitting diode arrays.
  • the preferred embodiment specifically includes the following steps:
  • Step S10 as shown in FIG. 7, providing a first supply substrate 101 corresponding to a desired blue color, and a receiving substrate 20, wherein the first supply substrate 101 is provided with a plurality of blue micro light emitting diodes 411; Receiving a blue pixel region of the substrate 20, dividing a region to be transferred on the first supply substrate 101, and setting the blue micro light-emitting diode 411 on the region to be transferred of the supply substrate 101 as a blue micro-light emitting diode to be transferred.
  • first metal electrode 511 on each of the blue micro-light emitting diodes to be transferred Forming a first metal electrode 511 on each of the blue micro-light emitting diodes to be transferred; then, the first supply substrate 101 and the receiving substrate 20 are aligned, and the first of the blue micro-light emitting diodes to be transferred is first
  • the metal electrode 511 is correspondingly disposed on the driving electrode 21 on the blue pixel area of the receiving substrate 20, so that the first metal electrode 511 on the blue micro light emitting diode to be transferred is correspondingly bonded to the driving electrode 21, so that the metal electrode 511 is to be transferred.
  • Blue micro light two A pole tube is bonded to the blue pixel region of the receiving substrate 20, and the blue micro-light emitting diode array is fabricated on the receiving substrate 20.
  • Step S20 as shown in FIG. 8, providing a second supply substrate 102 corresponding to a desired red color, the second supply substrate 102 is provided with a plurality of red micro light-emitting diodes 412; and a red pixel region corresponding to the receiving substrate 20.
  • the second metal electrode 512 on each red micro light emitting diode to be transferred is correspondingly bonded to the driving electrode 21 on the driving electrode 21 on the region, so that the red micro light emitting diode to be transferred is bound to the red of the receiving substrate 20.
  • the fabrication of the red micro-light-emitting diode array is completed on the receiving substrate 20 in the pixel region.
  • Step S30 as shown in FIG. 9, providing a third supply substrate 103 corresponding to a desired green color, the third supply substrate 103 is provided with a plurality of green micro light-emitting diodes 413; and a green pixel region corresponding to the receiving substrate 20 Dividing a region to be transferred on the third supply substrate 103, and setting the green micro-light-emitting diode 413 on the region to be transferred of the supply substrate 103 as a green micro-light-emitting diode to be transferred, on each green micro-light-emitting diode to be transferred Forming a third metal electrode 513; then aligning the third supply substrate 103 with the receiving substrate 20, and correspondingly placing the third metal electrode 513 on each of the green micro-light emitting diodes to be transferred on the green pixel of the receiving substrate 20.
  • the third metal electrode 513 on each of the green micro-light-emitting diodes to be transferred is correspondingly bonded to the driving electrode 21 on the driving electrode 21 in the region, so that the green micro-light-emitting diode to be transferred is bound to the green of the receiving substrate 20
  • fabrication of the green micro-light-emitting diode array is completed on the receiving substrate 20, thereby obtaining a color micro-light emitting diode array substrate.
  • the present invention provides a method for fabricating a color micro-light-emitting diode array substrate by forming a plurality of monochromatic micro-light-emitting diode arrays of different colors on a receiving substrate to form a color micro-light emitting diode array.
  • the fabrication of a monochromatic micro-light-emitting diode array of each color in combination with a bonding technique and a laser shedding technique, selectively forming a metal electrode on a micro-light emitting diode of a specific region on the supply substrate, thereby selectively micro-specifically
  • the light emitting diode is bound on the receiving substrate, and selectively irradiates the micro light emitting diode of the specific region with laser light, so that the micro light emitting diode of the specific region is bound and laser-annealed and separated from the supply substrate, on the receiving substrate.
  • the monochromatic micro-light-emitting diode array is formed, thereby realizing the fabrication of the monochromatic micro-light-emitting diode arrays of different colors on the substrate, and the manufacturing method is simple and easy.

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Abstract

本发明提供一种彩色微发光二极管阵列基板的制作方法，通过在接受基板上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落技术，选择性地在供给基板上特定区域的微发光二极管上形成金属电极，从而选择性地将该特定区域的微发光二极管绑定在接受基板上，并选择性的对该特定区域的微发光二极管进行激光照射，从而使该特定区域的微发光二极管经过绑定以及激光退火后与供给基板分离，在接受基板上形成单色微发光二极管阵列，进而实现了接受基板上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。

Description

彩色微发光二极管阵列基板的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种彩色微发光二极管阵列基板的制作方法。
背景技术
微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
由于晶格匹配的原因，Micro LED器件必须先在供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transfer head)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED bare chip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成Micro LED bare chip的转移，形成Micro LED阵列。
因此，在微转印技术制作Micro LED阵列的过程中，需要使用传送头对Micro LED阵列进行转移，传送头的结构相对复杂，并需要考虑它的可靠性，制造传送头需要额外的成本。在利用传送头拾取Micro LED之前需要产生相位改变，Micro LED用于相位改变的热预算受到限制，通常小于 350℃，或者更具体地，小于200℃；否则，Micro LED的性能会劣化。且在Micro LED阵列的制作过程中通常需要两次转移，即，从供给基板到传送头的转移、以及从传送头到接受基板的转移。
针对利用传送头进行微转印所存在的问题，本领域以已提出一种芯片绑定(Chip Bonding)的技术来对Micro LED阵列进行转移，即将提供Micro LED的供给基板直接与接受基板进行对位和键合，省去传送头的中间步骤，但这么做较难实现LED显示阵列的彩色化，因为一个供给基板上生长的Micro LED多数是单一颜色，使得接受基板上所绑定的Micro LED阵列是单色，进而只能进行单色显示，例如蓝色的显示，而无法实现多色Micro LED的排列而进行彩色显示，例如红绿蓝(R/G/B)三色Micro LED的交错排列。另外，供给基板的尺寸目前还是以2-4英寸为主，从而限制了一次转移的Micro LED颗数。
发明内容
本发明的目的在于提供一种彩色微发光二极管阵列基板的制作方法，将对应不同颜色的供给基板上的微发光二极管均选择性地转移到接受基板上而形成多个不同颜色的单色微发光二极管阵列，从而实现彩色微发光二极管阵列基板的制作。
为实现上述目的，本发明提供了一种彩色微发光二极管阵列基板的制作方法，所述彩色微发光二极管阵列基板包括接受基板、及设于所述接受基板上的彩色微发光二极管阵列；所述接受基板包括多个分别对应不同颜色的单色像素区域，所述彩色微发光二极管阵列包括多个不同颜色的单色微发光二极管阵列，每个颜色的单色微发光二极管阵列设于对应该颜色的单色像素区域上；
其中，所述彩色微发光二极管阵列基板上每个颜色的单色微发光二极管阵列的制作方法，均包括如下步骤：
步骤S1、提供对应于所需颜色的供给基板、及接受基板，该供给基板上设有多个该所需颜色的微发光二极管；对应于所述接受基板的对应该所需颜色的单色像素区域，在该供给基板上划分出待转移区域，将该供给基板的待转移区域上的微发光二极管设为待转移微发光二极管，在每一待转移微发光二极管上形成金属电极；
所述接受基板的每一单色像素区域上均设有多个驱动电极；
步骤S2、将所述供给基板与所述接受基板进行对位，将每一待转移微发光二极管上的金属电极对应置于接受基板的对应该所需颜色的单色像素 区域上的驱动电极上，使每一待转移微发光二极管上的金属电极与驱动电极对应键合，而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上；
步骤S3、对供给基板上多个微发光二极管中所有的待转移微发光二极管进行激光照射，从而使得所有的待转移微发光二极管从供给基板上脱落而固定在对应该所需颜色的单色像素区域上，完成该颜色的单色微发光二极管阵列的制作。
所述步骤S3中，采用大面积激光光源并结合掩膜板对所述多个微发光二极管进行选择性照射，从而只对待转移微发光二极管进行激光照射。
所述步骤S3中，采用多个定向激光光源对所述多个微发光二极管进行选择性照射，具体通过将所述多个定向激光光源对应所述供给基板上的待转移微发光二极管进行设置，从而只对待转移微发光二极管进行激光照射。
所述步骤S1中，通过光刻工艺在每一待转移微发光二极管上形成金属电极。
所述步骤S2中，所述多个驱动电极上设有低熔点焊盘。
所述步骤S2中，将所述待转移微发光二极管绑定在所述接受基板上的具体过程为：在将待转移微发光二极管置于所述驱动电极上之后，进行加热处理，使得驱动电极上的低熔点焊盘熔化，从而将待转移微发光二极管的金属电极与所述驱动电极键合，从而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上。
所述彩色微发光二极管阵列基板上不同颜色的单色微发光二极管阵列前后依次制作形成；
对于在后制作的单色微发光二极管阵列的金属电极的厚度和相应的驱动电极在接受基板上的高度之和，大于在前制作的单色微发光二极管阵列在接受基板上的高度。
所述步骤S3中从供给基板侧、或从接受基板侧对所述待转移微发光二极管进行激光照射。
所述接受基板包括三个单色像素区域，该三个单色像素区域分别为红、绿、蓝色像素区域，所述彩色微发光二极管阵列相应包括三个不同颜色的单色微发光二极管阵列，该三个单色微发光二极管阵列分别为红、绿、蓝色微发光二极管阵列。
所述接受基板为TFT阵列基板。
本发明还提供一种彩色微发光二极管阵列基板的制作方法，所述彩色微发光二极管阵列基板包括接受基板、及设于所述接受基板上的彩色微发 光二极管阵列；所述接受基板包括多个分别对应不同颜色的单色像素区域，所述彩色微发光二极管阵列包括多个不同颜色的单色微发光二极管阵列，每个颜色的单色微发光二极管阵列设于对应该颜色的单色像素区域上；
其中，所述彩色微发光二极管阵列基板上每个颜色的单色微发光二极管阵列的制作方法，均包括如下步骤：
步骤S1、提供对应于所需颜色的供给基板、及接受基板，该供给基板上设有多个该所需颜色的微发光二极管；对应于所述接受基板的对应该所需颜色的单色像素区域，在该供给基板上划分出待转移区域，将该供给基板的待转移区域上的微发光二极管设为待转移微发光二极管，在每一待转移微发光二极管上形成金属电极；
所述接受基板的每一单色像素区域上均设有多个驱动电极；
步骤S2、将所述供给基板与所述接受基板进行对位，将每一待转移微发光二极管上的金属电极对应置于接受基板的对应该所需颜色的单色像素区域上的驱动电极上，使每一待转移微发光二极管上的金属电极与驱动电极对应键合，而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上；
步骤S3、对供给基板上多个微发光二极管中所有的待转移微发光二极管进行激光照射，从而使得所有的待转移微发光二极管从供给基板上脱落而固定在对应该所需颜色的单色像素区域上，完成该颜色的单色微发光二极管阵列的制作；
其中，所述步骤S1中，通过光刻工艺在每一待转移微发光二极管上形成金属电极；
其中，所述步骤S2中，所述多个驱动电极上设有低熔点焊盘。
本发明的有益效果：本发明提供了一种彩色微发光二极管阵列基板的制作方法，通过在接受基板上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落(Laser Lift Off)技术，选择性地在供给基板上特定区域的微发光二极管上形成金属电极，从而选择性地将该特定区域的微发光二极管绑定在接受基板上，并选择性的对该特定区域的微发光二极管进行激光照射，从而使该特定区域的微发光二极管经过绑定以及激光退火后与供给基板分离，在接受基板上形成单色微发光二极管阵列，进而实现了接受基板上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的流程示意图；
图2为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的步骤S1的示意图；
图3为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的步骤S2的示意图；
图4为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的步骤S3的示意图；
图5为图4所示的步骤S3中采用大面积激光光源并结合掩膜板对多个微发光二极管进行选择性照射的示意图；
图6为图4所示的步骤S3中采用多个定向激光光源对多个微发光二极管进行选择性照射的示意图；
图7为本发明的彩色微发光二极管阵列基板的制作方法的优选实施例的步骤S10的示意图；
图8为本发明的彩色微发光二极管阵列基板的制作方法的优选实施例的步骤S20的示意图；
图9为本发明的彩色微发光二极管阵列基板的制作方法的优选实施例的步骤S30的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明提供一种彩色微发光二极管阵列基板的制作方法，所述彩色微发光二极管阵列基板包括接受基板20、及设于所述接受基板20上的彩色微发光二极管阵列；所述接受基板20包括多个分别对应不同颜色的单色像素区域，所述彩色微发光二极管阵列包括多个不同颜色的单色微发光二极管阵列，每个颜色的单色微发光二极管阵列设于对应该颜色的单色像素区域上。
请参阅图1，其中，所述彩色微发光二极管阵列基板上每个颜色的单色 微发光二极管阵列的制作方法，均包括如下步骤：
步骤S1、如图2所示，提供对应于所需颜色的供给基板10、及接受基板20，该供给基板10上设有多个该所需颜色的微发光二极管41；对应于所述接受基板20的对应该所需颜色的单色像素区域，在该供给基板10上划分出待转移区域，将该供给基板10的待转移区域上的微发光二极管41设为待转移微发光二极管，在每一待转移微发光二极管上形成金属电极51；
所述接受基板20的每一单色像素区域上均设有多个驱动电极21。
具体地，所述步骤S1中，通过光刻工艺在每一待转移微发光二极管上形成金属电极51。
步骤S2、如图3所示，将所述供给基板10与所述接受基板20进行对位，将每一待转移微发光二极管上的金属电极51对应置于接受基板20的对应该所需颜色的单色像素区域上的驱动电极21上，使每一待转移微发光二极管上的金属电极51与驱动电极21对应键合，而使得待转移微发光二极管绑定在所述接受基板20的对应该所需颜色的单色像素区域上。
具体地，所述步骤S2中，所述多个驱动电极21上设有低熔点焊盘。
具体地，所述步骤S2中，将所述待转移微发光二极管绑定在所述接受基板20上的具体过程为：在将待转移微发光二极管置于所述驱动电极21上之后，进行加热处理，使得驱动电极21上的低熔点焊盘熔化，从而将待转移微发光二极管的金属电极51与所述驱动电极21键合，从而使得待转移微发光二极管绑定在所述接受基板20的对应该所需颜色的单色像素区域上。
步骤S3、如图4所示，对供给基板10上多个微发光二极管41中所有的待转移微发光二极管进行激光照射，从而使得所有的待转移微发光二极管从供给基板10上脱落而固定在对应该所需颜色的单色像素区域上，完成该颜色的单色微发光二极管阵列的制作。
具体地，如图5所示，所述步骤S3中，采用大面积激光光源61并结合掩膜板70对所述多个微发光二极管41进行选择性照射，从而只对待转移微发光二极管进行激光照射。或者，
如图6所示，所述步骤S3中，采用多个向性好光斑宽度较小的定向激光光源62对所述多个微发光二极管41进行选择性照射，具体通过将所述多个定向激光光源62对应所述供给基板10上的待转移微发光二极管进行设置，从而只对待转移微发光二极管进行激光照射。
具体地，所述步骤S3中可以从供给基板10侧、也可以从接受基板20侧对所述待转移微发光二极管进行激光照射，这里对此不做限制。
具体地，本发明的彩色微发光二极管阵列基板的制作方法中，所述彩色微发光二极管阵列基板上不同颜色的单色微发光二极管阵列前后依次制作形成；那么，对于在后制作的单色微发光二极管阵列的金属电极51的厚度和相应的驱动电极21在接受基板20上的高度之和，大于在前制作的单色微发光二极管阵列在接受基板20上的高度，从而防止在前制作单色微发光二极管阵列阻碍在后制作的单色微发光二极管阵列的金属电极51与相应的驱动电极21的键合。
具体地，所述接受基板20为TFT阵列基板，从而在接受基板20上完成所有不同颜色的单色微发光二极管阵列的制作之后，可进一步用于制作彩色微发光二极管显示器，从而进行彩色显示。
本发明的彩色微发光二极管阵列基板的制作方法，通过在接受基板20上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落技术，选择性地在供给基板10上特定区域的微发光二极管41上形成金属电极52，从而选择性地将该特定区域的微发光二极管41绑定在接受基板20上，并选择性的对该特定区域的微发光二极管41进行激光照射，从而使该特定区域的微发光二极管41经过绑定以及激光退火后与供给基板10分离，在接受基板20上形成单色微发光二极管阵列，进而实现了接受基板20上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。
具体地，本发明的彩色微发光二极管阵列基板的制作方法的优选实施例中，所述接受基板20包括三个单色像素区域，该三个单色像素区域分别为红、绿、蓝色像素区域，所述彩色微发光二极管阵列相应包括三个不同颜色的单色微发光二极管阵列，该三个单色微发光二极管阵列分别为红、绿、蓝色微发光二极管阵列。该优选实施例具体包括如下步骤：
步骤S10、如图7所示，提供对应于所需蓝色的第一供给基板101、及接受基板20，该第一供给基板101上设有多个蓝色微发光二极管411；对应于所述接受基板20的蓝色像素区域，在该第一供给基板101上划分出待转移区域，将该供给基板101的待转移区域上的蓝色微发光二极管411设为待转移蓝色微发光二极管，在每一待转移蓝色微发光二极管上形成第一金属电极511；然后将所述第一供给基板101与接受基板20进行对位，将其每一待转移蓝色微发光二极管上的第一金属电极511对应置于接受基板20的蓝色像素区域上的驱动电极21上，使每一待转移蓝色微发光二极管上的第一金属电极511与驱动电极21对应键合，而使得待转移蓝色微发光二 极管绑定在所述接受基板20的蓝色像素区域上，在所述接受基板20上完成蓝色微发光二极管阵列的制作。
步骤S20、如图8所示，提供对应于所需红色的第二供给基板102，该第二供给基板102上设有多个红色微发光二极管412；对应于所述接受基板20的红色像素区域，在该第二供给基板102上划分出待转移区域，将该供给基板102的待转移区域上的红色微发光二极管412设为待转移红色微发光二极管，在每一待转移红色微发光二极管上形成第二金属电极512；然后将所述第二供给基板102与接受基板20进行对位，将其每一待转移红色微发光二极管上的第二金属电极512对应置于接受基板20的红色像素区域上的驱动电极21上，使每一待转移红色微发光二极管上的第二金属电极512与驱动电极21对应键合，而使得待转移红色微发光二极管绑定在所述接受基板20的红色像素区域上，在所述接受基板20上完成红色微发光二极管阵列的制作。
步骤S30、如图9所示，提供对应于所需绿色的第三供给基板103，该第三供给基板103上设有多个绿色微发光二极管413；对应于所述接受基板20的绿色像素区域，在该第三供给基板103上划分出待转移区域，将该供给基板103的待转移区域上的绿色微发光二极管413设为待转移绿色微发光二极管，在每一待转移绿色微发光二极管上形成第三金属电极513；然后将所述第三供给基板103与接受基板20进行对位，将其每一待转移绿色微发光二极管上的第三金属电极513对应置于接受基板20的绿色像素区域上的驱动电极21上，使每一待转移绿色微发光二极管上的第三金属电极513与驱动电极21对应键合，而使得待转移绿色微发光二极管绑定在所述接受基板20的绿色像素区域上，在所述接受基板20上完成绿色微发光二极管阵列的制作，从而得到彩色微发光二极管阵列基板。
综上所述，本发明提供了一种彩色微发光二极管阵列基板的制作方法，通过在接受基板上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落技术，选择性地在供给基板上特定区域的微发光二极管上形成金属电极，从而选择性地将该特定区域的微发光二极管绑定在接受基板上，并选择性的对该特定区域的微发光二极管进行激光照射，从而使该特定区域的微发光二极管经过绑定以及激光退火后与供给基板分离，在接受基板上形成单色微发光二极管阵列，进而实现了接受基板上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (18)

  1. 一种彩色微发光二极管阵列基板的制作方法，所述彩色微发光二极管阵列基板包括接受基板、及设于所述接受基板上的彩色微发光二极管阵列；所述接受基板包括多个分别对应不同颜色的单色像素区域，所述彩色微发光二极管阵列包括多个不同颜色的单色微发光二极管阵列，每个颜色的单色微发光二极管阵列设于对应该颜色的单色像素区域上；
    其中，所述彩色微发光二极管阵列基板上每个颜色的单色微发光二极管阵列的制作方法，均包括如下步骤：
    步骤S1、提供对应于所需颜色的供给基板、及接受基板，该供给基板上设有多个该所需颜色的微发光二极管；对应于所述接受基板的对应该所需颜色的单色像素区域，在该供给基板上划分出待转移区域，将该供给基板的待转移区域上的微发光二极管设为待转移微发光二极管，在每一待转移微发光二极管上形成金属电极；
    所述接受基板的每一单色像素区域上均设有多个驱动电极；
    步骤S2、将所述供给基板与所述接受基板进行对位，将每一待转移微发光二极管上的金属电极对应置于接受基板的对应该所需颜色的单色像素区域上的驱动电极上，使每一待转移微发光二极管上的金属电极与驱动电极对应键合，而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上；
    步骤S3、对供给基板上多个微发光二极管中所有的待转移微发光二极管进行激光照射，从而使得所有的待转移微发光二极管从供给基板上脱落而固定在对应该所需颜色的单色像素区域上，完成该颜色的单色微发光二极管阵列的制作。
  2. 如权利要求1所述的彩色微发光二极管阵列基板的制作方法，其中，所述步骤S3中，采用大面积激光光源并结合掩膜板对所述多个微发光二极管进行选择性照射，从而只对待转移微发光二极管进行激光照射。
  3. 如权利要求1所述的彩色微发光二极管阵列基板的制作方法，其中，所述步骤S3中，采用多个定向激光光源对所述多个微发光二极管进行选择性照射，具体通过将所述多个定向激光光源对应所述供给基板上的待转移微发光二极管进行设置，从而只对待转移微发光二极管进行激光照射。
  4. 如权利要求1所述的彩色微发光二极管阵列基板的制作方法，其中，所述步骤S1中，通过光刻工艺在每一待转移微发光二极管上形成金属电极。
  5. 如权利要求1所述的彩色微发光二极管阵列基板的制作方法，其中，所述步骤S2中，所述多个驱动电极上设有低熔点焊盘。
  6. 如权利要求5所述的彩色微发光二极管阵列基板的制作方法，其中，所述步骤S2中，将所述待转移微发光二极管绑定在所述接受基板上的具体过程为：在将待转移微发光二极管置于所述驱动电极上之后，进行加热处理，使得驱动电极上的低熔点焊盘熔化，从而将待转移微发光二极管上的金属电极与所述驱动电极键合，从而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上。
  7. 如权利要求1所述的彩色微发光二极管阵列基板的制作方法，其中，所述彩色微发光二极管阵列基板上不同颜色的单色微发光二极管阵列前后依次制作形成；
    对于在后制作的单色微发光二极管阵列的金属电极的厚度和相应的驱动电极在接受基板上的高度之和，大于在前制作的单色微发光二极管阵列在接受基板上的高度。
  8. 如权利要求1所述的彩色微发光二极管阵列基板的制作方法，其中，所述步骤S3中从供给基板侧、或从接受基板侧对所述待转移微发光二极管进行激光照射。
  9. 如权利要求1所述的彩色微发光二极管阵列基板的制作方法，其中，所述接受基板包括三个单色像素区域，该三个单色像素区域分别为红、绿、蓝色像素区域，所述彩色微发光二极管阵列相应包括三个不同颜色的单色微发光二极管阵列，该三个单色微发光二极管阵列分别为红、绿、蓝色微发光二极管阵列。
  10. 如权利要求1所述的彩色微发光二极管阵列基板的制作方法，其中，所述接受基板为TFT阵列基板。
  11. 一种彩色微发光二极管阵列基板的制作方法，所述彩色微发光二极管阵列基板包括接受基板、及设于所述接受基板上的彩色微发光二极管阵列；所述接受基板包括多个分别对应不同颜色的单色像素区域，所述彩色微发光二极管阵列包括多个不同颜色的单色微发光二极管阵列，每个颜色的单色微发光二极管阵列设于对应该颜色的单色像素区域上；
    其中，所述彩色微发光二极管阵列基板上每个颜色的单色微发光二极管阵列的制作方法，均包括如下步骤：
    步骤S1、提供对应于所需颜色的供给基板、及接受基板，该供给基板上设有多个该所需颜色的微发光二极管；对应于所述接受基板的对应该所需颜色的单色像素区域，在该供给基板上划分出待转移区域，将该供给基 板的待转移区域上的微发光二极管设为待转移微发光二极管，在每一待转移微发光二极管上形成金属电极；
    所述接受基板的每一单色像素区域上均设有多个驱动电极；
    步骤S2、将所述供给基板与所述接受基板进行对位，将每一待转移微发光二极管上的金属电极对应置于接受基板的对应该所需颜色的单色像素区域上的驱动电极上，使每一待转移微发光二极管上的金属电极与驱动电极对应键合，而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上；
    步骤S3、对供给基板上多个微发光二极管中所有的待转移微发光二极管进行激光照射，从而使得所有的待转移微发光二极管从供给基板上脱落而固定在对应该所需颜色的单色像素区域上，完成该颜色的单色微发光二极管阵列的制作；
    其中，所述步骤S1中，通过光刻工艺在每一待转移微发光二极管上形成金属电极；
    其中，所述步骤S2中，所述多个驱动电极上设有低熔点焊盘。
  12. 如权利要求11所述的彩色微发光二极管阵列基板的制作方法，其中，所述步骤S3中，采用大面积激光光源并结合掩膜板对所述多个微发光二极管进行选择性照射，从而只对待转移微发光二极管进行激光照射。
  13. 如权利要求11所述的彩色微发光二极管阵列基板的制作方法，其中，所述步骤S3中，采用多个定向激光光源对所述多个微发光二极管进行选择性照射，具体通过将所述多个定向激光光源对应所述供给基板上的待转移微发光二极管进行设置，从而只对待转移微发光二极管进行激光照射。
  14. 如权利要求11所述的彩色微发光二极管阵列基板的制作方法，其中，所述步骤S2中，将所述待转移微发光二极管绑定在所述接受基板上的具体过程为：在将待转移微发光二极管置于所述驱动电极上之后，进行加热处理，使得驱动电极上的低熔点焊盘熔化，从而将待转移微发光二极管上的金属电极与所述驱动电极键合，从而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上。
  15. 如权利要求11所述的彩色微发光二极管阵列基板的制作方法，其中，所述彩色微发光二极管阵列基板上不同颜色的单色微发光二极管阵列前后依次制作形成；
    对于在后制作的单色微发光二极管阵列的金属电极的厚度和相应的驱动电极在接受基板上的高度之和，大于在前制作的单色微发光二极管阵列在接受基板上的高度。
  16. 如权利要求11所述的彩色微发光二极管阵列基板的制作方法，其中，所述步骤S3中从供给基板侧、或从接受基板侧对所述待转移微发光二极管进行激光照射。
  17. 如权利要求11所述的彩色微发光二极管阵列基板的制作方法，其中，所述接受基板包括三个单色像素区域，该三个单色像素区域分别为红、绿、蓝色像素区域，所述彩色微发光二极管阵列相应包括三个不同颜色的单色微发光二极管阵列，该三个单色微发光二极管阵列分别为红、绿、蓝色微发光二极管阵列。
  18. 如权利要求11所述的彩色微发光二极管阵列基板的制作方法，其中，所述接受基板为TFT阵列基板。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110310907A (zh) * 2019-07-02 2019-10-08 南方科技大学 一种Micro-LED芯片转移方法及显示装置

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12464822B2 (en) 2016-11-25 2025-11-04 Vuereal Inc. Integration of microdevices into system substrate
US10978530B2 (en) 2016-11-25 2021-04-13 Vuereal Inc. Integration of microdevices into system substrate
US10916523B2 (en) 2016-11-25 2021-02-09 Vuereal Inc. Microdevice transfer setup and integration of micro-devices into system substrate
CA2986503A1 (en) * 2017-11-23 2019-05-23 Vuereal Inc. Microdevice transfer setup
US10998352B2 (en) 2016-11-25 2021-05-04 Vuereal Inc. Integration of microdevices into system substrate
TWI634371B (zh) * 2017-09-29 2018-09-01 Taiflex Scientific Co., Ltd. 微小元件的轉移方法
CN107978665B (zh) * 2017-11-16 2019-09-17 歌尔股份有限公司 Micro LED制备方法
US10989376B2 (en) 2017-11-28 2021-04-27 Facebook Technologies, Llc Assembling of strip of micro light emitting diodes onto backplane
EP3489998A1 (en) * 2017-11-28 2019-05-29 Facebook Technologies, LLC Assembling of strip of micro light emitting diodes onto backplane
CN107919414A (zh) * 2017-12-04 2018-04-17 歌尔股份有限公司 微发光二极管转移的方法、制造方法、装置和电子设备
CN114447163B (zh) * 2018-02-02 2024-05-03 湖北三安光电有限公司 微发光装置的键合治具、键合设备及其键合方法
US11837628B2 (en) 2018-05-16 2023-12-05 Industrial Technology Research Institute Display array
US11515299B2 (en) 2018-05-16 2022-11-29 Industrial Technology Research Institute Method for manufacturing display array
CN108807265B (zh) 2018-07-09 2020-01-31 厦门乾照光电股份有限公司 Micro-LED巨量转移方法、显示装置及制作方法
CN108538878A (zh) 2018-07-11 2018-09-14 大连德豪光电科技有限公司 微发光二极管基板及其制备方法、显示装置
FR3083918B1 (fr) * 2018-07-13 2020-10-23 Commissariat Energie Atomique Procede de transfert de structures
CN109192821A (zh) * 2018-08-31 2019-01-11 华灿光电（浙江）有限公司 发光二极管芯片的转移方法、转移基板及发光二极管阵列
CN109524512B (zh) * 2018-11-15 2020-07-03 华中科技大学 基于可控微反射镜阵列的微型发光二极管巨量转移方法
CN109860092B (zh) * 2019-01-02 2020-10-02 南京中电熊猫液晶显示科技有限公司 一种微型发光二极管巨量转移的方法及显示器
CN111463332B (zh) * 2019-01-18 2021-07-27 群创光电股份有限公司 具有发光二极管封装体的电子装置
KR102867050B1 (ko) * 2019-04-16 2025-10-13 삼성전자주식회사 Led 전사 방법 및 이에 의해 제조된 디스플레이 모듈
CN110265348B (zh) * 2019-06-17 2021-07-20 上海天马微电子有限公司 一种转运基板、发光二极管的转运方法及转运设备
CN110350063B (zh) * 2019-07-22 2020-08-11 京东方科技集团股份有限公司 发光二极管、显示基板和转移方法
CN110416243B (zh) * 2019-07-26 2021-11-12 成都辰显光电有限公司 一种显示面板及其制作方法
CN110610931A (zh) * 2019-09-20 2019-12-24 中国科学院长春光学精密机械与物理研究所 多色Micro LED分区分批次制备方法
CN112701076A (zh) * 2019-10-23 2021-04-23 北京小米移动软件有限公司 显示屏的制作方法及系统
CN112768370B (zh) * 2019-11-06 2023-02-10 成都辰显光电有限公司 微元件的转移方法及转移装置
WO2021097734A1 (zh) * 2019-11-21 2021-05-27 重庆康佳光电技术研究院有限公司 一种led晶粒转移方法
CN111081830A (zh) * 2019-12-21 2020-04-28 华南理工大学 一种嵌入式电极结构led退火的方法
CN111128813B (zh) * 2020-01-20 2022-10-28 福州大学 一种μLED巨量转移方法
CN111489992B (zh) * 2020-04-23 2024-03-29 京东方科技集团股份有限公司 一种显示基板的制作方法、显示基板及显示装置
WO2021217607A1 (zh) * 2020-04-30 2021-11-04 重庆康佳光电技术研究院有限公司 一种键合方法、显示背板及显示背板制造系统
CN111613699B (zh) * 2020-05-25 2021-06-01 深圳市华星光电半导体显示技术有限公司 微型发光二极管及其制作方法
CN112968021A (zh) * 2020-05-26 2021-06-15 重庆康佳光电技术研究院有限公司 一种键合方法和显示装置
CN113745137B (zh) * 2020-05-30 2023-12-19 华为机器有限公司 微型发光二极管的转移方法与显示面板
CN111584538A (zh) * 2020-06-05 2020-08-25 武汉华星光电技术有限公司 微型发光二极管显示装置及其制造方法
JP2022007774A (ja) * 2020-06-26 2022-01-13 株式会社ジャパンディスプレイ 表示装置の製造方法
CN111739987B (zh) * 2020-08-18 2021-02-05 深圳市Tcl高新技术开发有限公司 Led芯片转移方法和光源板
CN114171423A (zh) * 2020-09-10 2022-03-11 梭特科技股份有限公司 区块预排的固晶方法
CN114171656B (zh) * 2020-09-11 2024-02-02 成都辰显光电有限公司 接收基板及其制作方法
EP4174963A4 (en) 2020-10-30 2023-08-23 BOE Technology Group Co., Ltd. Light emitting diode substrate and manufacturing method therefor, and display apparatus
CN115708219A (zh) * 2021-08-19 2023-02-21 重庆康佳光电技术研究院有限公司 Led芯片的巨量转移方法、显示面板和显示装置
CN114193937B (zh) * 2021-11-05 2022-10-14 华中科技大学 剔除坏点及自对准喷印的μLED全彩显示制造方法与设备
CN115274960A (zh) * 2022-07-18 2022-11-01 安徽熙泰智能科技有限公司 Micro LED器件及其制造方法
CN115312634B (zh) * 2022-07-26 2025-07-11 深圳市华星光电半导体显示技术有限公司 微发光二极管的分散转移方法
CN115863497B (zh) * 2023-02-20 2023-05-23 镭昱光电科技(苏州)有限公司 MicroLED显示器件及其制备方法
CN116314492A (zh) * 2023-05-25 2023-06-23 江西兆驰半导体有限公司 一种全彩化Micro LED器件及其制备方法
CN118281024B (zh) * 2024-05-31 2024-09-20 杭州海康威视数字技术股份有限公司 一种像素阵列、光电二极管的制备方法、成像传感器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103441101A (zh) * 2013-08-28 2013-12-11 中国科学院半导体研究所 全彩发光二极管模组的制备方法
WO2016100657A2 (en) * 2014-12-19 2016-06-23 Glo Ab Method of making a light emitting diode array on a backplane
CN105723528A (zh) * 2015-11-04 2016-06-29 歌尔声学股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
CN105870265A (zh) * 2016-04-19 2016-08-17 京东方科技集团股份有限公司 发光二极管基板及其制备方法、显示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003077940A (ja) * 2001-09-06 2003-03-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP2003174041A (ja) * 2001-12-06 2003-06-20 Seiko Epson Corp 素子の実装方法、電子機器、フラットパネルディスプレイ、システムインパッケージ型ｉｃおよびオプティカルエレクトリカルｉｃ
JP2004266026A (ja) * 2003-02-28 2004-09-24 Sony Corp チップ部品の製造方法、素子の配列方法及び画像表示装置の製造方法
JP4479827B2 (ja) * 2008-05-12 2010-06-09 ソニー株式会社 発光ダイオード表示装置及びその製造方法
US9455242B2 (en) * 2010-09-06 2016-09-27 Epistar Corporation Semiconductor optoelectronic device
CN102903804B (zh) * 2011-07-25 2015-12-16 财团法人工业技术研究院 发光元件的转移方法以及发光元件阵列
US9548332B2 (en) * 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
CN102637681B (zh) * 2012-04-28 2014-07-30 厦门市三安光电科技有限公司 垂直式发光器件及其制作方法
CN103700736A (zh) * 2013-12-20 2014-04-02 中国科学院半导体研究所 一种氮化镓基外延膜的选区激光剥离方法
US10141287B2 (en) * 2015-07-14 2018-11-27 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-LED

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103441101A (zh) * 2013-08-28 2013-12-11 中国科学院半导体研究所 全彩发光二极管模组的制备方法
WO2016100657A2 (en) * 2014-12-19 2016-06-23 Glo Ab Method of making a light emitting diode array on a backplane
CN105723528A (zh) * 2015-11-04 2016-06-29 歌尔声学股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
CN105870265A (zh) * 2016-04-19 2016-08-17 京东方科技集团股份有限公司 发光二极管基板及其制备方法、显示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110310907A (zh) * 2019-07-02 2019-10-08 南方科技大学 一种Micro-LED芯片转移方法及显示装置
CN110310907B (zh) * 2019-07-02 2022-06-14 深圳市思坦科技有限公司 一种Micro-LED芯片转移方法及显示装置

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