WO2018227680A1 - Micro LED彩色显示器件 - Google Patents

Micro LED彩色显示器件 Download PDF

Info

Publication number
WO2018227680A1
WO2018227680A1 PCT/CN2017/092859 CN2017092859W WO2018227680A1 WO 2018227680 A1 WO2018227680 A1 WO 2018227680A1 CN 2017092859 W CN2017092859 W CN 2017092859W WO 2018227680 A1 WO2018227680 A1 WO 2018227680A1
Authority
WO
WIPO (PCT)
Prior art keywords
pixel electrode
led
disposed
sub
package substrate
Prior art date
Application number
PCT/CN2017/092859
Other languages
English (en)
French (fr)
Inventor
陈黎暄
李泳锐
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/548,099 priority Critical patent/US20180357948A1/en
Publication of WO2018227680A1 publication Critical patent/WO2018227680A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007—Display of intermediate tones
    • G09G3/2074—Display of intermediate tones using sub-pixels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a micro LED color display device.
  • Micro LED LED miniaturization and matrixing, refers to high-density, tiny-sized LED arrays that are integrated on a single chip.
  • Micro LEDs consume far less power than liquid crystal displays (LCDs), and are self-illuminating like organic light-emitting diodes (OLEDs), which can reduce the distance between pixels from millimeters to micrometers. The color saturation is close to OLED, so many manufacturers regard Micro LED as the next generation display technology.
  • a micro LED array is fabricated by a micro transfer printing method: after the LED bare chip (Bare Chip) is separated from the sapphire substrate by laser lift-off (LLO) technology, a The patterned transfer layer adsorbs the LED bare chip from the supply substrate and transfers it to the receiving substrate.
  • the receiving substrate is a silicon substrate in which the circuit pattern has been prepared in advance, and by aligning the transfer substrate and the receiving substrate, the bare LED chip adsorbed on the transfer substrate is attached to the matching position of the receiving substrate, and then stripped and transferred.
  • the substrate can complete the transfer of the LED bare chip.
  • Patents such as US 2013/0210194, US 2013/0128585 and the like have a more detailed description of the micro transfer technology.
  • the Micro LED color display device is fabricated by manufacturing a LED display driver circuit through a normal CMOS integrated circuit manufacturing process, and then fabricating an LED array on the integrated circuit.
  • CMOS integrated circuit manufacturing process there is a process of dividing the LED into a specification (known as Bin in the industry). In different Bins, the peak wavelength will move, and the chromaticity and brightness of the LED may be consistently deviated. .
  • the preparation of a Micro LED color display device using LED as a light source requires large-scale production of red, green, and blue LEDs. In this process, LEDs grown by different wafers (Wafer) have a high probability of being in different Bins. Therefore, the deviation of the chromaticity of the LED is an inevitable phenomenon.
  • the chromaticity difference of the green LED is the largest for the adjacent 3 to 4 Bin LEDs: when the peak wavelength shifts by 2 nm, the x chromaticity difference G ⁇ x of the green LED exceeds 0.01. And the peak wavelength range of a Bin is often 2.5nm, which means that for the Micro LED color display device, the stability of the green color is not easy to control, the color of the green color Degree uniformity needs to be improved.
  • the present invention provides a micro LED color display device including a driving substrate, a package substrate disposed opposite to the driving substrate, and a plurality of arrays arranged between the driving substrate and the package substrate. a blue sub-pixel, a green sub-pixel, and a red sub-pixel, and a support disposed between the driving substrate and the package substrate; an LED is disposed correspondingly in each sub-pixel;
  • the blue sub-pixel includes a first lower pixel electrode disposed on the driving substrate, a first upper pixel electrode disposed opposite to the first lower pixel electrode, and a first lower pixel electrode disposed on the first lower pixel electrode a first blue LED between the first upper pixel electrodes;
  • the green sub-pixel includes a second lower pixel electrode disposed on the driving substrate, and a second upper pixel electrode disposed opposite to the second lower pixel electrode a second blue LED interposed between the second lower pixel electrode and the second upper pixel electrode, and a green color conversion layer disposed between the second upper pixel electrode and the package substrate;
  • the sub-pixel includes a third lower pixel electrode disposed on the driving substrate, a third upper pixel electrode disposed opposite to the third lower pixel electrode, and a third lower pixel electrode and a third upper pixel disposed LED between the electrodes.
  • the LED sandwiched between the third lower pixel electrode and the third upper pixel electrode is a red LED.
  • the LED sandwiched between the third lower pixel electrode and the third upper pixel electrode is a third blue LED; the red sub-pixel further includes a A red color conversion layer between the third upper pixel electrode and the package substrate.
  • the blue sub-pixel further includes a first transparent spacer disposed between the first upper pixel electrode and the package substrate; the red sub-pixel further includes a second transparent portion disposed between the third upper pixel electrode and the package substrate Spacer.
  • the blue sub-pixel further includes a first transparent spacer disposed between the first upper pixel electrode and the package substrate.
  • the material of the green color conversion layer is a green quantum dot.
  • the material of the red color conversion layer is a red quantum dot.
  • the height of the first transparent spacer and the second transparent spacer are the same or different, and the sum of the heights of the first blue LED and the first transparent spacer is the same as the sum of the heights of the red LED and the second transparent spacer .
  • the heights of the first upper pixel electrode and the third upper pixel electrode are the same or different; the sum of the heights of the first lower pixel electrode, the first blue LED, and the first upper pixel electrode is equal to the driving substrate and the package substrate.
  • the spacing between the third lower pixel electrode, the red LED, and the third upper pixel electrode is equal to the spacing between the driving substrate and the package substrate.
  • the material of the package substrate is polyethylene terephthalate, polycarbonate, or glass;
  • the material of the support is an organic photoresist or a silicon ball
  • the materials of the first transparent spacer and the second transparent spacer are all organic transparent materials or inorganic transparent materials;
  • the materials of the first, second, and third upper pixel electrodes and the first, second, and third lower pixel electrodes are all indium tin oxide or a conductive metal.
  • the present invention also provides a micro LED color display device, comprising a driving substrate, a package substrate disposed opposite to the driving substrate, and a plurality of blue sub-pixels arranged in an array between the driving substrate and the package substrate a green sub-pixel, a red sub-pixel, and a support disposed between the driving substrate and the package substrate; an LED is disposed correspondingly in each sub-pixel;
  • the blue sub-pixel includes a first lower pixel electrode disposed on the driving substrate, a first upper pixel electrode disposed opposite to the first lower pixel electrode, and a first lower pixel electrode disposed on the first lower pixel electrode a first blue LED between the first upper pixel electrodes;
  • the green sub-pixel includes a second lower pixel electrode disposed on the driving substrate, and a second upper pixel electrode disposed opposite to the second lower pixel electrode a second blue LED interposed between the second lower pixel electrode and the second upper pixel electrode, and a green color conversion layer disposed between the second upper pixel electrode and the package substrate;
  • the sub-pixel includes a third lower pixel electrode disposed on the driving substrate, a third upper pixel electrode disposed opposite to the third lower pixel electrode, and a third lower pixel electrode and a third upper pixel disposed LED between the electrodes;
  • the LED sandwiched between the third lower pixel electrode and the third upper pixel electrode is a red LED
  • the blue sub-pixel further includes a first transparent spacer disposed between the first upper pixel electrode and the package substrate; the red sub-pixel further includes a third pixel electrode disposed between the third pixel electrode and the package substrate Two transparent spacers;
  • the material of the green color conversion layer is a green quantum dot
  • the height of the first transparent spacer and the second transparent spacer are the same or different, and the sum of the heights of the first blue LED and the first transparent spacer and the height of the red LED and the second transparent spacer And consistent.
  • the present invention provides a Micro LED color display device in which a green color conversion layer is excited by a second blue LED of a short wavelength in a green sub-pixel.
  • the green LED and the second blue LED are relatively stable, and the chromaticity of the green color can be controlled by controlling the precision of the green color conversion layer coating thickness.
  • the precision control of the coating thickness is easier than the specification of the green LED, and the chromaticity can be made.
  • the uniformity is good, the stability of the green color is easy to control, and the display quality is improved.
  • Figure 1 is a schematic diagram showing the relationship between the chromaticity of the solid color and the deviation of the peak wavelength of the LED;
  • FIG. 2 is a schematic structural view of a first embodiment of a Micro LED color display device of the present invention
  • FIG. 3 is a schematic structural view of a second embodiment of a Micro LED color display device of the present invention.
  • FIG. 4 is a schematic structural view of a third embodiment of a Micro LED color display device of the present invention.
  • Figure 5 is a schematic illustration of the preparation of a green color conversion layer by ink jet printing.
  • the invention provides a Micro LED color display device.
  • 2 shows a first embodiment of a micro LED color display device according to the present invention, comprising a driving substrate 1 and a package substrate 2 disposed opposite to the driving substrate 1 and disposed between the driving substrate 1 and the package substrate 2
  • the plurality of blue sub-pixels P1, the green sub-pixel P2, the red sub-pixel P3, and the support 4 provided between the drive substrate 1 and the package substrate 2 are arranged in an array.
  • the blue sub-pixel P1 includes a first lower pixel electrode E11 disposed on the driving substrate 1 and a first upper pixel electrode E12 disposed opposite to the first lower pixel electrode E11, and is disposed on the first a first blue LED B1 between the lower pixel electrode E11 and the first upper pixel electrode E12, and a first transparent spacer S1 disposed between the first upper pixel electrode E12 and the package substrate 2;
  • the green sub-pixel P2 a second lower pixel electrode E21 disposed on the driving substrate 1 , a second upper pixel electrode E22 disposed opposite to the second lower pixel electrode E21 , and a second lower pixel electrode E21 and second a second blue LED B2 between the upper pixel electrode E22 and a green color conversion layer G disposed between the second upper pixel electrode E22 and the package substrate 2;
  • the red sub-pixel P3 includes the driving a third lower pixel electrode E31 on the substrate 1 , a third upper pixel electrode E32 disposed opposite to the third lower pixel electrode E
  • the blue sub-pixel P1 directly emits blue color light by using the first blue LED B1
  • the red sub-pixel P3 directly emits red color light by using the red LED R. 1.
  • the chromaticity difference of the first blue LED B1 and the red LED R with the peak wavelength offset is small, that is, the optical difference between the first blue LED B1 and the red LED R of the adjacent Bin is not large. Therefore, the chromaticity of the first blue LED B1 and the red LED R itself is relatively uniform.
  • the green sub-pixel P2 uses the second blue LED B2 of short wavelength to excite the green color conversion layer G to emit green color light instead of the green LED to directly emit light, and the second blue LED B2 itself is relatively Stable, the chromaticity of the green color can be controlled by controlling the precision of the green color conversion layer G coating thickness.
  • the precision control of the coating thickness is easier than the Bin control of the green LED, and the chromaticity uniformity of the green color is better, green
  • the stability of the color is easy to control, thereby improving the overall display quality.
  • the material of the green color conversion layer G is a green quantum dot capable of being excited by blue light to emit green light.
  • the green color conversion layer G is coated on the package substrate 2.
  • a display driving circuit (not shown) is disposed in the driving substrate 1, and the switching and brightness of the LEDs in each sub-pixel are controlled by a Thin Film Transistor (TFT) array.
  • TFT Thin Film Transistor
  • the material of the package substrate 2 may be a plastic having a certain hardness such as polyethylene terephthalate (PET) or polycarbonate (PC), or may be glass.
  • PET polyethylene terephthalate
  • PC polycarbonate
  • the materials of the first, second, and third upper pixel electrodes E12, E22, and E32, and the first, second, and third lower pixel electrodes E11, E21, and E31 are all Indium Tin Oxide (ITO), or A conductive metal such as silver (Ag) or the like.
  • ITO Indium Tin Oxide
  • a conductive metal such as silver (Ag) or the like.
  • the support 4 is used to maintain a certain distance between the driving substrate 1 and the package substrate 2, and prevent the green color conversion layer G from being pressed by the second blue LED B2, even if the support 4 is deformed by pressure,
  • the green color conversion layer G should be pressed to change the height, that is, the film thickness;
  • the material of the support 4 may be an organic photoresist for making a photo spacer in a liquid crystal display. It can be a relatively hard silicon ball or the like.
  • the first transparent spacer S1 and the second transparent spacer S2 are disposed such that the first upper pixel electrode E12, the second upper pixel electrode E22, and the third upper pixel electrode E32 are at the same height, so that the first The heights of a blue LED B1, a second blue LED B2, and a red LED R are relatively uniform; further, the materials of the first transparent spacer S1 and the second transparent spacer S2 are all organic transparent materials such as Fluoroalkoxy resin (PFA), or inorganic transparent material. Considering that the green color conversion layer G needs to be coated on the package substrate 2, the first transparent spacer S1 is fabricated.
  • the second transparent spacer S2 is preferably a process which is more consistent with the green color conversion layer G.
  • the heights of the first transparent spacer S1 and the second transparent spacer S2 may be the same or different, as long as the sum of the heights of the first blue LED B1 and the first transparent spacer S1 and the red LED R and the second are ensured.
  • the sum of the heights of the transparent spacers S2 is relatively uniform, so that the heights of the first upper pixel electrode E12 and the third upper pixel electrode E32, that is, the film thicknesses are relatively uniform.
  • FIG. 3 is a second embodiment of the micro LED color display device of the present invention.
  • the second embodiment differs from the first embodiment in that the first transparent spacer S1 is omitted, directly from the first upper pixel electrode E12.
  • the package substrate 2 is contacted; the second transparent spacer S2 is omitted, and the package substrate 2 is directly contacted by the third upper pixel electrode E32.
  • Other structures are unchanged and will not be repeatedly described herein.
  • the heights of the first upper pixel electrode E12 and the third upper pixel electrode E32 may be the same or different, as long as the respective sub-pixels are controlled by using a mask when making each pixel electrode.
  • the film thickness of the pixel electrode is such that the sum of the heights of the first lower pixel electrode E11, the first blue LED B1, and the first upper pixel electrode E12 is equal to the spacing between the driving substrate 1 and the package substrate 2, and The sum of the heights of the third lower pixel electrode E31, the red LED R, and the third upper pixel electrode E32 is equal to the pitch between the drive substrate 1 and the package substrate 2.
  • the third embodiment differs from the first embodiment in that since the efficiency of the red LED R is often not high, the red sub-pixel P3 is sandwiched.
  • the red LED R disposed between the third lower pixel electrode E31 and the third upper pixel electrode E32 is replaced by a third blue LED B3, which is disposed between the third upper pixel electrode E32 and the package substrate 2.
  • the second transparent spacer S2 is replaced by a red color conversion layer R′, and the red color conversion layer R′ is excited by the third blue LED B3 to emit red color light instead of the red LED R to directly emit light, so as to improve the luminous efficiency of the red sub-pixel P3.
  • Other structures are unchanged and will not be repeatedly described herein.
  • the material of the red color conversion layer R' is a red quantum dot.
  • the green color conversion layer G and the red color conversion layer R' may be coated on the package substrate 2 by a method such as slit coating, ink jet printing (IJP), or thermal evaporation.
  • a method such as slit coating, ink jet printing (IJP), or thermal evaporation.
  • IJP ink jet printing
  • the pixel defining layer may be used as the support 4.
  • the micro LED color display device of the present invention uses a short blue wavelength second LED to excite the green color conversion layer to replace the green LED in the green sub-pixel, and the second blue LED itself is relatively stable and can pass Controlling the accuracy of the green color conversion layer coating thickness to control the chromaticity of the green color, the precision control of the coating thickness is easier to control than the specification of the green LED, the chromaticity uniformity is better, the stability of the green color is easy to control, and the display The quality is improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种Micro LED彩色显示器件，在绿色子像素(P2)中采用短波长的第二蓝色LED(B2)激发绿色色彩转换层(G)发光来代替绿色LED，第二蓝色LED(B2)本身较为稳定，可通过控制绿色色彩转换层(G)涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的规格控制容易，能够使得色度均匀性较好，绿颜色的稳定性易于控制，显示质量提高。

Description

Micro LED彩色显示器件 技术领域
本发明涉及显示技术领域，尤其涉及一种Micro LED彩色显示器件。
背景技术
随着可穿戴显示设备的快速发展，出现了微发光二极管(Micro LED，uLED)技术。Micro LED技术即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。Micro LED的耗电量远小于液晶显示器(Liquid Crystal Display，LCD)，与有机发光二极管(Organic Light-Emitting Diode，OLED)一样属于自发光，能够将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED，所以很多厂商把Micro LED视为下一代的显示技术。
现有技术通过微转印(Micro Transfer Print)法来制作Micro LED阵列：将LED裸芯片(Bare Chip)通过激光剥离(Laser Lift-off，LLO)技术从蓝宝石衬底上分离开后，使用一个图案化的转移基板(Transfer Layer)将LED裸芯片从供给基板吸附起来，转移到接收基板。具体地，这个接收基板是已经预先制备完成电路图案的硅基板，通过将转移基板与接收基板进行对位，转移基板上所吸附的LED裸芯片被贴附到接收基板的匹配位置，再剥离转移基板，即可完成LED裸芯片的转移。诸如US2013/0210194，US2013/0128585等专利对微转印技术有较为细致地描述。
Micro LED彩色显示器件通过正常的CMOS集成电路制造工艺制作LED显示驱动电路，再在集成电路上制作LED阵列制得。在实际的LED的生产过程中有一个对LED分规格(业界称为分Bin)的过程，在不同的Bin中，峰值波长会发生移动，LED的色度、亮度等会存在一致性偏离的问题。制备以LED作为光源的Micro LED彩色显示器件，需要大规模生产红色、绿色、及蓝色的LED，在这个过程中由于不同晶圆(Wafer)生长出的LED很大概率处于不同的Bin中，所以LED的色度一致性偏离是一个必然现象。
请参阅图1，通过计算发现，对于相邻的3～4个Bin的LED，绿色LED的色度差异性最大：当峰值波长平移2nm，绿色LED的x色度差异G△x就超过了0.01，而一个Bin的峰值波长范围往往有2.5nm，这意味着对于Micro LED彩色显示器件来说，绿颜色的稳定性并不容易控制，绿颜色的色 度均匀性有待改善。
发明内容
本发明的目的在于提供一种Micro LED彩色显示器件，其色度均匀性好，绿颜色的稳定性易于控制，显示质量得以提高。
为实现上述目的，本发明提供一种Micro LED彩色显示器件，包括驱动基板、与所述驱动基板相对设置的封装基板、设在所述驱动基板与封装基板之间呈阵列式排布的多个蓝色子像素、绿色子像素、与红色子像素、以及设在所述驱动基板与封装基板之间的支撑物；每一子像素内对应设置一个LED；
所述蓝色子像素包括设在所述驱动基板上的第一下像素电极、与所述第一下像素电极相对设置的第一上像素电极、及夹设在所述第一下像素电极与第一上像素电极之间的第一蓝色LED；所述绿色子像素包括设在所述驱动基板上的第二下像素电极、与所述第二下像素电极相对设置的第二上像素电极、夹设在所述第二下像素电极与第二上像素电极之间的第二蓝色LED、及设在所述第二上像素电极与封装基板之间的绿色色彩转换层；所述红色子像素包括设在所述驱动基板上的第三下像素电极、与所述第三下像素电极相对设置的第三上像素电极、及夹设在所述第三下像素电极与第三上像素电极之间的LED。
可选的，所述红色子像素中，所述夹设在所述第三下像素电极与第三上像素电极之间的LED为红色LED。
可选的，所述红色子像素中，所述夹设在所述第三下像素电极与第三上像素电极之间的LED为第三蓝色LED；所述红色子像素还包括设在所述第三上像素电极与封装基板之间的红色色彩转换层。
所述蓝色子像素还包括设在第一上像素电极与封装基板之间的第一透明间隔体；所述红色子像素还包括设在第三上像素电极与封装基板之间的第二透明间隔体。
所述蓝色子像素还包括设在第一上像素电极与封装基板之间的第一透明间隔体。
所述绿色色彩转换层的材料是绿色量子点。
所述红色色彩转换层的材料是红色量子点。
所述第一透明间隔体与第二透明间隔体的高度相同或不同，所述第一蓝色LED和第一透明间隔体的高度之和与红色LED和第二透明间隔体的高度之和一致。
所述第一上像素电极与第三上像素电极的高度相同或不同；所述第一下像素电极、第一蓝色LED、与第一上像素电极的高度之和等于驱动基板与封装基板之间的间距；所述第三下像素电极、红色LED、与第三上像素电极的高度之和等于驱动基板与封装基板之间的间距。
所述封装基板的材料为聚对苯二甲酸乙二醇酯、聚碳酸酯、或玻璃；
所述支撑物的材料为有机光阻或硅球；
所述第一透明间隔体、第二透明间隔体的材料均为有机透明材料、或无机透明材料；
第一、第二、第三上像素电极、及第一、第二、第三下像素电极的材料均为氧化铟锡、或导电金属。
本发明还提供一种Micro LED彩色显示器件，包括驱动基板、与所述驱动基板相对设置的封装基板、设在所述驱动基板与封装基板之间呈阵列式排布的多个蓝色子像素、绿色子像素、与红色子像素、以及设在所述驱动基板与封装基板之间的支撑物；每一子像素内对应设置一个LED；
所述蓝色子像素包括设在所述驱动基板上的第一下像素电极、与所述第一下像素电极相对设置的第一上像素电极、及夹设在所述第一下像素电极与第一上像素电极之间的第一蓝色LED；所述绿色子像素包括设在所述驱动基板上的第二下像素电极、与所述第二下像素电极相对设置的第二上像素电极、夹设在所述第二下像素电极与第二上像素电极之间的第二蓝色LED、及设在所述第二上像素电极与封装基板之间的绿色色彩转换层；所述红色子像素包括设在所述驱动基板上的第三下像素电极、与所述第三下像素电极相对设置的第三上像素电极、及夹设在所述第三下像素电极与第三上像素电极之间的LED；
其中，所述红色子像素中，所述夹设在所述第三下像素电极与第三上像素电极之间的LED为红色LED；
其中，所述蓝色子像素还包括设在第一上像素电极与封装基板之间的第一透明间隔体；所述红色子像素还包括设在第三上像素电极与封装基板之间的第二透明间隔体；
其中，所述绿色色彩转换层的材料是绿色量子点；
其中，所述第一透明间隔体与第二透明间隔体的高度相同或不同，所述第一蓝色LED和第一透明间隔体的高度之和与红色LED和第二透明间隔体的高度之和一致。
本发明的有益效果：本发明提供的一种Micro LED彩色显示器件，在绿色子像素中采用短波长的第二蓝色LED激发绿色色彩转换层发光来代替 绿色LED，第二蓝色LED本身较为稳定，可通过控制绿色色彩转换层涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的规格控制容易，能够使得色度均匀性较好，绿颜色的稳定性易于控制，显示质量提高。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为纯色色度随LED峰值波长平移发生偏离的曲线关系示意图；
图2为本发明的Micro LED彩色显示器件的第一实施例的结构示意图；
图3为本发明的Micro LED彩色显示器件的第二实施例的结构示意图；
图4为本发明的Micro LED彩色显示器件的第三实施例的结构示意图；
图5为采用喷墨打印法制备绿色色彩转换层的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明提供一种Micro LED彩色显示器件。图2所示为本发明的Micro LED彩色显示器件的第一实施例，包括驱动基板1、与所述驱动基板1相对设置的封装基板2、设在所述驱动基板1与封装基板2之间呈阵列式排布的多个蓝色子像素P1、绿色子像素P2、与红色子像素P3、以及设在所述驱动基板1与封装基板2之间的支撑物4。
所述蓝色子像素P1包括设在所述驱动基板1上的第一下像素电极E11、与所述第一下像素电极E11相对设置的第一上像素电极E12、夹设在所述第一下像素电极E11与第一上像素电极E12之间的第一蓝色LED B1、及设在第一上像素电极E12与封装基板2之间的第一透明间隔体S1；所述绿色子像素P2包括设在所述驱动基板1上的第二下像素电极E21、与所述第二下像素电极E21相对设置的第二上像素电极E22、夹设在所述第二下像素电极E21与第二上像素电极E22之间的第二蓝色LED B2、及设在所述第二上像素电极E22与封装基板2之间的绿色色彩转换层G；所述红色子像素P3包括设在所述驱动基板1上的第三下像素电极E31、与所述第三下像素电极E31相对设置的第三上像素电极E32、夹设在所述第三下像素电极E31 与第三上像素电极E32之间的红色LED R、及设在第三上像素电极E32与封装基板2之间的第二透明间隔体S2。
在本发明的Micro LED彩色显示器件的第一实施例中，蓝色子像素P1采用第一蓝色LED B1直接发出蓝颜色光，红色子像素P3采用红色LED R直接发出红颜色光，结合图1，第一蓝色LED B1与红色LED R随着峰值波长偏移的色度差异性都较小，也就是说相邻Bin的第一蓝色LED B1与红色LED R的光学差异不大，所以第一蓝色LED B1与红色LED R本身的色度就比较均匀。本发明与现有技术最大的不同在于：绿色子像素P2采用短波长的第二蓝色LED B2激发绿色色彩转换层G发出绿颜色光来代替绿色LED直接发光，第二蓝色LED B2本身较为稳定，可通过控制绿色色彩转换层G涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的Bin控制容易，能够使得绿颜色的色度均匀性较好，绿颜色的稳定性易于控制，从而提高整体显示质量。
具体地：
所述绿色色彩转换层G的材料是绿色量子点,能够受蓝光激发而发出绿光。该绿色色彩转换层G涂布在封装基板2上。
所述驱动基板1内设有显示驱动电路(未图示)，以薄膜晶体管(Thin Film Transistor，TFT)阵列控制每个子像素内LED的开关和亮度。
所述封装基板2的材料可为聚对苯二甲酸乙二醇酯(PET)、或聚碳酸酯(PC)等有一定硬度的塑料，也可以是玻璃。
第一、第二、第三上像素电极E12、E22、E32、及第一、第二、第三下像素电极E11、E21、E31的材料均为氧化铟锡(Indium Tin Oxide，ITO)、或导电金属，如银(Ag)等。
所述支撑物4用于使驱动基板1与封装基板2之间保持一定的间距，并防止绿色色彩转换层G受到第二蓝色LED B2的挤压，即使支撑物4受压变形，也不应当使绿色色彩转换层G受压而发生高度即膜厚的变化；进一步地，所述支撑物4的材料可以是用于制作液晶显示器中光阻间隔柱(Photo spacer)的有机光阻，也可以是较为坚硬的硅球等。
所述第一透明间隔体S1、第二透明间隔体S2的设置是为了使得第一上像素电极E12、第二上像素电极E22、及第三上像素电极E32处于相同高度，这样便可以使得第一蓝色LED B1、第二蓝色LED B2、及红色LED R的高度较为统一；进一地，所述第一透明间隔体S1、第二透明间隔体S2的材料均为有机透明材料如全氟烷氧基树脂(PFA)、或无机透明材料。考虑到封装基板2上需涂布绿色色彩转换层G，在制作所述第一透明间隔体S1、第 二透明间隔体S2时优选与制作绿色色彩转换层G较为一致的工艺制程。
所述第一透明间隔体S1与第二透明间隔体S2的高度可以相同，也可以不同，只要保证第一蓝色LED B1和第一透明间隔体S1的高度之和与红色LED R和第二透明间隔体S2的高度之和较为一致便可使得第一上像素电极E12与第三上像素电极E32的高度即膜厚较为一致。
图3所示为本发明的Micro LED彩色显示器件的第二实施例，该第二实施例与第一实施例的区别在于：省去第一透明间隔体S1，由第一上像素电极E12直接接触封装基板2；省去第二透明间隔体S2，由第三上像素电极E32直接接触封装基板2。其它结构均不变，此处不再进行重复描述。
进一步地，所述第一上像素电极E12与第三上像素电极E32的高度即膜厚可以相同，也可以不同，只要在制作各像素电极时利用掩膜板(Mask)控制不同子像素中相应像素电极的膜厚，保证所述第一下像素电极E11、第一蓝色LED B1、与第一上像素电极E12的高度之和等于驱动基板1与封装基板2之间的间距，以及所述第三下像素电极E31、红色LED R、与第三上像素电极E32的高度之和等于驱动基板1与封装基板2之间的间距。
图4所示为本发明的Micro LED彩色显示器件的第三实施例，该第三实施例与第一实施例的区别在于：由于红色LED R的效率往往不高，将红色子像素P3中夹设在所述第三下像素电极E31与第三上像素电极E32之间的红色LED R替换为第三蓝色LED B3，将设在所述第三上像素电极E32与封装基板2之间的第二透明间隔体S2替换为红色色彩转换层R’，通过第三蓝色LED B3激发红色色彩转换层R’发出红颜色光来代替红色LED R直接发光，以提高红色子像素P3的发光效率。其它结构均不变，此处不再进行重复描述。
进一步地，所述红色色彩转换层R’的材料是红色量子点。
所述绿色色彩转换层G及红色色彩转换层R’可通过狭缝涂布(Slit Coating)、喷墨打印(Inkjet Printing，IJP)、或热蒸镀等方法涂布在封装基板2上。请参阅图5，当采用IJP方式在像素界定层间涂布绿色色彩转换层G或红色色彩转换层R’时，可以以像素界定层作为支撑物4。
综上所述，本发明的Micro LED彩色显示器件，在绿色子像素中采用短波长的第二蓝色LED激发绿色色彩转换层发光来代替绿色LED，第二蓝色LED本身较为稳定，可通过控制绿色色彩转换层涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的规格控制容易，能够使得色度均匀性较好，绿颜色的稳定性易于控制，显示质量提高。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (13)

  1. 一种Micro LED彩色显示器件，包括驱动基板、与所述驱动基板相对设置的封装基板、设在所述驱动基板与封装基板之间呈阵列式排布的多个蓝色子像素、绿色子像素、与红色子像素、以及设在所述驱动基板与封装基板之间的支撑物；每一子像素内对应设置一个LED；
    所述蓝色子像素包括设在所述驱动基板上的第一下像素电极、与所述第一下像素电极相对设置的第一上像素电极、及夹设在所述第一下像素电极与第一上像素电极之间的第一蓝色LED；所述绿色子像素包括设在所述驱动基板上的第二下像素电极、与所述第二下像素电极相对设置的第二上像素电极、夹设在所述第二下像素电极与第二上像素电极之间的第二蓝色LED、及设在所述第二上像素电极与封装基板之间的绿色色彩转换层；所述红色子像素包括设在所述驱动基板上的第三下像素电极、与所述第三下像素电极相对设置的第三上像素电极、及夹设在所述第三下像素电极与第三上像素电极之间的LED。
  2. 如权利要求1所述的Micro LED彩色显示器件，其中，所述红色子像素中，所述夹设在所述第三下像素电极与第三上像素电极之间的LED为红色LED。
  3. 如权利要求1所述的Micro LED彩色显示器件，其中，所述红色子像素中，所述夹设在所述第三下像素电极与第三上像素电极之间的LED为第三蓝色LED；所述红色子像素还包括设在所述第三上像素电极与封装基板之间的红色色彩转换层。
  4. 如权利要求2所述的Micro LED彩色显示器件，其中，所述蓝色子像素还包括设在第一上像素电极与封装基板之间的第一透明间隔体；所述红色子像素还包括设在第三上像素电极与封装基板之间的第二透明间隔体。
  5. 如权利要求3所述的Micro LED彩色显示器件，其中，所述蓝色子像素还包括设在第一上像素电极与封装基板之间的第一透明间隔体。
  6. 如权利要求1所述的Micro LED彩色显示器件，其中，所述绿色色彩转换层的材料是绿色量子点。
  7. 如权利要求3所述的Micro LED彩色显示器件，其中，所述红色色彩转换层的材料是红色量子点。
  8. 如权利要求4所述的Micro LED彩色显示器件，其中，所述第一透明间隔体与第二透明间隔体的高度相同或不同，所述第一蓝色LED和第一 透明间隔体的高度之和与红色LED和第二透明间隔体的高度之和一致。
  9. 如权利要求2所述的Micro LED彩色显示器件，其中，所述第一上像素电极与第三上像素电极的高度相同或不同；所述第一下像素电极、第一蓝色LED、与第一上像素电极的高度之和等于驱动基板与封装基板之间的间距；所述第三下像素电极、红色LED、与第三上像素电极的高度之和等于驱动基板与封装基板之间的间距。
  10. 如权利要求4所述的Micro LED彩色显示器件，其中，所述封装基板的材料为聚对苯二甲酸乙二醇酯、聚碳酸酯、或玻璃；
    所述支撑物的材料为有机光阻或硅球；
    所述第一透明间隔体、第二透明间隔体的材料均为有机透明材料、或无机透明材料；
    第一、第二、第三上像素电极、及第一、第二、第三下像素电极的材料均为氧化铟锡、或导电金属。
  11. 一种Micro LED彩色显示器件，包括驱动基板、与所述驱动基板相对设置的封装基板、设在所述驱动基板与封装基板之间呈阵列式排布的多个蓝色子像素、绿色子像素、与红色子像素、以及设在所述驱动基板与封装基板之间的支撑物；每一子像素内对应设置一个LED；
    所述蓝色子像素包括设在所述驱动基板上的第一下像素电极、与所述第一下像素电极相对设置的第一上像素电极、及夹设在所述第一下像素电极与第一上像素电极之间的第一蓝色LED；所述绿色子像素包括设在所述驱动基板上的第二下像素电极、与所述第二下像素电极相对设置的第二上像素电极、夹设在所述第二下像素电极与第二上像素电极之间的第二蓝色LED、及设在所述第二上像素电极与封装基板之间的绿色色彩转换层；所述红色子像素包括设在所述驱动基板上的第三下像素电极、与所述第三下像素电极相对设置的第三上像素电极、及夹设在所述第三下像素电极与第三上像素电极之间的LED；
    其中，所述红色子像素中，所述夹设在所述第三下像素电极与第三上像素电极之间的LED为红色LED；
    其中，所述蓝色子像素还包括设在第一上像素电极与封装基板之间的第一透明间隔体；所述红色子像素还包括设在第三上像素电极与封装基板之间的第二透明间隔体；
    其中，所述绿色色彩转换层的材料是绿色量子点；
    其中，所述第一透明间隔体与第二透明间隔体的高度相同或不同，所述第一蓝色LED和第一透明间隔体的高度之和与红色LED和第二透明间隔 体的高度之和一致。
  12. 如权利要求11所述的Micro LED彩色显示器件，其中，所述第一上像素电极与第三上像素电极的高度相同或不同；所述第一下像素电极、第一蓝色LED、与第一上像素电极的高度之和等于驱动基板与封装基板之间的间距；所述第三下像素电极、红色LED、与第三上像素电极的高度之和等于驱动基板与封装基板之间的间距。
  13. 如权利要求11所述的Micro LED彩色显示器件，其中，所述封装基板的材料为聚对苯二甲酸乙二醇酯、聚碳酸酯、或玻璃；
    所述支撑物的材料为有机光阻或硅球；
    所述第一透明间隔体、第二透明间隔体的材料均为有机透明材料、或无机透明材料；
    第一、第二、第三上像素电极、及第一、第二、第三下像素电极的材料均为氧化铟锡、或导电金属。
PCT/CN2017/092859 2017-06-13 2017-07-13 Micro LED彩色显示器件 WO2018227680A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/548,099 US20180357948A1 (en) 2017-06-13 2017-07-13 Micro led color display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710443800.4 2017-06-13
CN201710443800.4A CN107068707A (zh) 2017-06-13 2017-06-13 Micro LED彩色显示器件

Publications (1)

Publication Number Publication Date
WO2018227680A1 true WO2018227680A1 (zh) 2018-12-20

Family

ID=59595260

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/092859 WO2018227680A1 (zh) 2017-06-13 2017-07-13 Micro LED彩色显示器件

Country Status (3)

Country Link
US (1) US20180357948A1 (zh)
CN (1) CN107068707A (zh)
WO (1) WO2018227680A1 (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI739931B (zh) * 2017-10-18 2021-09-21 優顯科技股份有限公司 顯示裝置
US10720098B2 (en) * 2017-11-15 2020-07-21 Facebook Technologies, Llc Pulse-width-modulation control of micro LED
CN107946483B (zh) * 2017-12-06 2019-09-06 洪作良 一种用于电子显示器的led联合发光体制备方法
CN108493154B (zh) * 2018-04-28 2020-09-29 深圳市华星光电技术有限公司 Micro LED显示面板的制作方法及Micro LED显示面板
US10665573B2 (en) 2018-04-28 2020-05-26 Shenzhen China Star Optoelectronics Technology Co., Ltd. Manufacturing method of micro light-emitting diode display panel having elastic conductive layer filled between pixel electrode and micro light-emitting diode and micro light-emitting diode display panel manufactured with the same
CN108399897B (zh) * 2018-05-04 2020-06-30 京东方科技集团股份有限公司 背光驱动电路及方法、背光模组、背光电路和显示装置
CN108573992A (zh) * 2018-05-08 2018-09-25 业成科技（成都）有限公司 显示面板、制备方法及应用该显示面板的电子装置
CN110875344A (zh) * 2018-08-31 2020-03-10 昆山工研院新型平板显示技术中心有限公司 一种led显示器件的制备方法及led显示器件
CN110875345A (zh) 2018-08-31 2020-03-10 昆山工研院新型平板显示技术中心有限公司 Led显示器件及其制造方法、led显示面板
CN109671365A (zh) * 2019-01-30 2019-04-23 京东方科技集团股份有限公司 Micro-LED显示基板及其制作方法、显示装置
CN111863871A (zh) * 2019-04-29 2020-10-30 云谷（固安）科技有限公司 一种显示面板及其制备方法
CN111863832B (zh) * 2019-04-30 2024-04-09 成都辰显光电有限公司 显示面板及其制造方法、电子设备
CN110176530B (zh) * 2019-05-14 2020-05-22 西安交通大学 一种图案化色彩变换阵列Micro LED及其制备方法和用途
US11088302B2 (en) 2019-07-08 2021-08-10 Osram Opto Semiconductors Gmbh Light-emitting device
CN110265587A (zh) * 2019-07-09 2019-09-20 昆山梦显电子科技有限公司 显示面板及其制造方法
CN110571224B (zh) * 2019-08-05 2021-12-28 深圳市华星光电半导体显示技术有限公司 显示装置及其制备方法
TWI775209B (zh) * 2020-02-19 2022-08-21 群創光電股份有限公司 顯示裝置
CN111312727A (zh) 2020-02-26 2020-06-19 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制作方法以及电子装置
CN111564465A (zh) * 2020-05-19 2020-08-21 深超光电（深圳）有限公司 显示面板的制备方法
KR20220083909A (ko) * 2020-12-11 2022-06-21 삼성디스플레이 주식회사 표시 장치
CN214409519U (zh) * 2021-03-10 2021-10-15 台湾扬昕股份有限公司 光源模块及显示装置
TWI815261B (zh) * 2021-12-27 2023-09-11 財團法人工業技術研究院 光色轉換膜層結構、其製造方法以及包含其之發光裝置
WO2023220050A1 (en) * 2022-05-09 2023-11-16 Nanosys, Inc. Microled-based display device and method of manufacturing same
TWI814413B (zh) * 2022-06-01 2023-09-01 錼創顯示科技股份有限公司 顯示面板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105679196A (zh) * 2016-04-11 2016-06-15 深圳市丽格特光电有限公司 一种基于氮化镓led和量子点技术的全彩色高分辨率微显示芯片
US20160290600A1 (en) * 2015-04-03 2016-10-06 Verily Life Sciences Llc Multi-colored led array on a single substrate
CN106356386A (zh) * 2016-09-30 2017-01-25 福州大学 一种基于Micro‑LED阵列背光源的喷墨打印量子点显示装置
US20170062400A1 (en) * 2014-11-27 2017-03-02 Sct Technology, Ltd. Method for manufacturing a light emitted diode display
CN106684108A (zh) * 2015-11-05 2017-05-17 群创光电股份有限公司 发光二极管显示设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9111464B2 (en) * 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US9911762B2 (en) * 2015-12-03 2018-03-06 Innolux Corporation Display device
CN109219886B (zh) * 2016-04-01 2023-05-05 首尔半导体株式会社 显示装置及其制造方法
US10490534B2 (en) * 2016-05-20 2019-11-26 Innolux Corporation Display device with LED pixels
CN106098697B (zh) * 2016-06-15 2019-04-02 深圳市华星光电技术有限公司 微发光二极管显示面板及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170062400A1 (en) * 2014-11-27 2017-03-02 Sct Technology, Ltd. Method for manufacturing a light emitted diode display
US20160290600A1 (en) * 2015-04-03 2016-10-06 Verily Life Sciences Llc Multi-colored led array on a single substrate
CN106684108A (zh) * 2015-11-05 2017-05-17 群创光电股份有限公司 发光二极管显示设备
CN105679196A (zh) * 2016-04-11 2016-06-15 深圳市丽格特光电有限公司 一种基于氮化镓led和量子点技术的全彩色高分辨率微显示芯片
CN106356386A (zh) * 2016-09-30 2017-01-25 福州大学 一种基于Micro‑LED阵列背光源的喷墨打印量子点显示装置

Also Published As

Publication number Publication date
US20180357948A1 (en) 2018-12-13
CN107068707A (zh) 2017-08-18

Similar Documents

Publication Publication Date Title
WO2018227680A1 (zh) Micro LED彩色显示器件
US10451257B2 (en) Micro-light-emitting diode backlight system
JP6916910B2 (ja) マイクロ発光ダイオード表示パネルの製造方法
KR102414593B1 (ko) 유기 발광 표시 장치 및 이의 제조 방법
WO2017181743A1 (zh) 发光二极管基板及其制备方法、显示装置
US10741608B2 (en) Manufacturing method of micro light-emitting diode display panel
KR102059003B1 (ko) 양자점 발광 다이오드 서브픽셀 어레이, 그 제조 방법 및 디스플레이 디바이스
WO2019205437A1 (zh) Micro LED显示面板的制作方法及Micro LED显示面板
WO2017219378A1 (zh) 微发光二极管显示器
US9897912B2 (en) Color filter film manufacturing method and color filter film
WO2017075879A1 (zh) 量子点彩膜基板及其制作方法与液晶显示装置
KR20180065162A (ko) 디스플레이 장치 및 그의 전극 연결 방법
US20220375988A1 (en) Micro led display panel and transfer printing method of micro led
CN103928497A (zh) Oled显示器件及其制作方法、显示装置
WO2009089105A1 (en) Flexible display
US11056550B2 (en) Display panel, manufacturing method thereof, and display module
US20160172562A1 (en) Method for forming Circuit-on-Wire
WO2021000384A1 (zh) 一种Micro-LED芯片转移方法及显示装置
CN203787433U (zh) Oled显示器件及显示装置
WO2021189475A1 (zh) 显示基板及其制作方法、显示装置
JP6418440B2 (ja) メタルマスク及びメタルマスクの製造方法並びにメタルマスクを用いた成膜方法
US9299725B2 (en) Fabrication process using circuit-on-wire
US20190140017A1 (en) Micro led color display device
US11804583B2 (en) Light emitting device and method for manufacturing the same
WO2018214191A1 (zh) 显示面板中有机功能层的制作方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17913670

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17913670

Country of ref document: EP

Kind code of ref document: A1