WO2018214203A1 - Tft基板的制作方法 - Google Patents

Tft基板的制作方法 Download PDF

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Publication number
WO2018214203A1
WO2018214203A1 PCT/CN2017/089263 CN2017089263W WO2018214203A1 WO 2018214203 A1 WO2018214203 A1 WO 2018214203A1 CN 2017089263 W CN2017089263 W CN 2017089263W WO 2018214203 A1 WO2018214203 A1 WO 2018214203A1
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Prior art keywords
layer
photoresist
pixel electrode
fabricating
tft
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English (en)
French (fr)
Inventor
李吉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/556,620 priority Critical patent/US10297623B2/en
Publication of WO2018214203A1 publication Critical patent/WO2018214203A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a TFT substrate.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • a liquid crystal display panel comprises a CF (Color Filter) substrate, a thin film transistor (TFT) substrate, a liquid crystal (LC) sandwiched between the color filter substrate and the thin film transistor substrate, and a sealant frame ( Sealant),
  • the molding process generally includes: front array (Array) process (film, yellow, etching and stripping), middle cell (Cell) process (TFT substrate and CF substrate bonding) and rear module assembly Process (drive IC and printed circuit board is pressed).
  • the front Array process mainly forms a TFT substrate to control the movement of liquid crystal molecules;
  • the middle Cell process mainly adds liquid crystal between the TFT substrate and the CF substrate;
  • the rear module assembly process is mainly to drive the IC to press and print the circuit.
  • the integration of the plates drives the liquid crystal molecules to rotate and display images.
  • the existing TFT substrate manufacturing method has been gradually developed from the first 7 mask technology to the 4 mask (4Msk, 4M) technology, and the four masks are respectively used to form: patterned gate, patterned The active layer and the source/drain, the pixel electrode via, and the patterned pixel electrode, at the same time, in order to further reduce the fabrication process of the TFT substrate, shorten the production time, and improve the production efficiency, 3 mask technology (3Mask, 3M) has also begun to be used on some products.
  • the process of fabricating a TFT substrate by using 3 mask technology generally includes: forming a patterned gate on the substrate by a first mask process, at the gate and The gate insulating layer is covered on the base substrate, and the patterned active layer and the source/drain are simultaneously formed by the second mask process, and the passivation layer is covered on the active layer and the source/drain through the third
  • a mask process produces a pixel electrode via and a patterned photoresist layer on the passivation layer, and a pixel electrode material is coated on the photoresist layer and the passivation layer, and is lifted off the ground (Lift Off) Process stripping photoresist layer and pixel electrode on photoresist layer Material, the pixel electrode prepared patterned.
  • the second reticle and the third reticle are both a Gray Tone Mask (GTM) or a Half Tone Mask (HTM).
  • the Lift Off technology is improved from 4 reticle technology to 3 reticle technology.
  • the so-called stripping technique refers to a technique that is capable of stripping the photoresist and the deposited film on the photoresist without tearing or damaging the film pattern on the substrate.
  • the three-mask technology is a technology capable of simultaneously stripping a photoresist film (Photoresist, PR) and a pixel electrode film on a photoresist and leaving a patterned pixel electrode.
  • the first one is through a special gray scale mask or a halftone mask, with special lithography process parameters.
  • the photoresist of the partial region is formed into an undercut, and the stripping liquid peels off the pixel electrode film on the photoresist and the photoresist from the undercut portion; second, after the photoresist layer is formed, the pixel electrode film Before the formation, the surface of the photoresist layer is specially subjected to plasma treatment, so that the surface of the photoresist layer forms an uneven film surface, so that the stripping liquid can make the photoresist and the light from the uneven film surface.
  • the pixel electrode film on the engraved film is peeled off.
  • the first two methods need to adopt a special gray-scale mask or halftone mask and special lithography process parameters, and the second needs to specialize on the surface of the photoresist layer.
  • the plasma treatment is very complicated, the production time is long, and the production efficiency is low.
  • An object of the present invention is to provide a method for fabricating a TFT substrate, which can simplify the fabrication process of the TFT substrate and improve the production efficiency of the TFT substrate.
  • the present invention provides a method for fabricating a TFT substrate, comprising the following steps:
  • Step S1 providing a substrate, forming a TFT layer on the substrate by using a first mask and a second mask process, and covering the TFT layer with a passivation layer;
  • Step S2 forming a photoresist layer and a pixel electrode via hole through a third mask process
  • the material of the photoresist layer contains a pigment which can be crystallized, and the photoresist layer is formed on the passivation layer, and the pattern of the photoresist layer corresponds to a pattern of a pixel electrode to be formed, And a surface of the photoresist layer is formed with a plurality of burr crystals; the pixel electrode via extends through the passivation layer and exposes a portion of the TFT layer;
  • Step S3 forming a pixel electrode film on the passivation layer, the photoresist layer, and the pixel electrode via;
  • Step S4 etching the photoresist layer by a stripping solution, and stripping the photoresist layer and the pixel electrode film on the photoresist layer to form a pixel electrode.
  • the step S1 specifically includes:
  • Step S11 providing a substrate, forming a first metal layer on the substrate, patterning the first metal layer through a first mask to form a gate;
  • Step S12 covering a gate insulating layer on the gate and the substrate;
  • Step S13 forming a stacked semiconductor layer and a second metal layer on the gate insulating layer
  • Step S14 applying a photoresist on the second metal layer, patterning the photoresist through a second mask, and thinning the thickness of the photoresist on the channel region of the thin film transistor to be formed. Removing the photoresist outside the region where the thin film transistor is to be formed;
  • Step S15 performing a first etching to remove the second metal layer and the semiconductor layer without the photoresist coating
  • Step S16 performing overall thinning treatment on the remaining photoresist to remove the photoresist on the channel region of the thin film transistor to be formed;
  • Step S17 performing a second etching to remove the second metal layer on the channel region of the thin film transistor to be formed, removing the remaining photoresist, to obtain an active layer and a source respectively contacting the two ends of the active layer a drain and a drain to form the TFT layer;
  • Step S18 covering the TFT layer with a passivation layer.
  • the step S2 specifically includes:
  • Step S21 coating a photoresist material containing a crystallizable pigment on the passivation layer, vacuum drying and pre-baking the photoresist material to form a photoresist film;
  • Step S22 performing exposure, development, and post-baking on the photoresist film to remove a photoresist film to be formed in the pixel electrode region to form a photoresist layer;
  • Step S23 etching the passivation layer to form a pixel electrode via.
  • the developed photoresist film is also subjected to UV illumination in the step S22.
  • the post-baking temperature in the step S22 is 230 to 260 ° C, and the duration is 20 to 40 minutes.
  • the crystallizable pigment is a PR254 pigment.
  • the second reticle is a gray scale reticle or a halftone reticle.
  • the pixel electrode via exposes a portion of the drain.
  • the pixel electrode is electrically connected to the drain through the pixel electrode via.
  • the material of the pixel electrode is ITO.
  • the invention also provides a method for fabricating a TFT substrate, comprising the following steps:
  • Step S1 providing a substrate, forming a TFT layer on the substrate by using a first mask and a second mask process, and covering the TFT layer with a passivation layer;
  • Step S2 forming a photoresist layer and a pixel electrode via hole through a third mask process
  • the material of the photoresist layer contains a pigment which can be crystallized, and the photoresist layer is formed on the passivation layer, and the pattern of the photoresist layer corresponds to a pattern of a pixel electrode to be formed, And a surface of the photoresist layer is formed with a plurality of burr crystals; the pixel electrode via extends through the passivation layer and exposes a portion of the TFT layer;
  • Step S3 forming a pixel electrode film on the passivation layer, the photoresist layer, and the pixel electrode via;
  • Step S4 etching the photoresist layer by a stripping solution, stripping the photoresist layer and the pixel electrode film on the photoresist layer to form a pixel electrode;
  • the second mask is a gray scale mask or a halftone mask
  • the material of the pixel electrode is ITO.
  • the present invention provides a method for fabricating a TFT substrate by forming a photoresist layer using a photoresist material containing a crystallizable pigment to form a burr crystal on the surface of the photoresist layer. Further, the pixel electrode film cannot completely cover the surface of the photoresist layer, and the stripping liquid can penetrate the photoresist layer through the burr crystal to etch the photoresist layer, thereby simultaneously stripping the photoresist layer and the photoresist layer. The pixel electrode film is obtained as a pixel electrode. Compared with the prior art, it is not necessary to use special mask and mask parameters when performing ground stripping, and plasma processing is not required, which simplifies the fabrication process of the TFT substrate and improves the TFT substrate. Productivity.
  • 1 to 8 are schematic views showing a step S1 of a method of fabricating a TFT substrate of the present invention
  • FIG. 9 is a schematic view showing a step S2 of a method of fabricating a TFT substrate of the present invention.
  • FIG. 10 is a schematic view showing a step S3 of a method of fabricating a TFT substrate of the present invention.
  • FIG. 11 is a schematic view showing a step S4 of a method of fabricating a TFT substrate of the present invention.
  • Fig. 12 is a flow chart showing a method of fabricating a TFT substrate of the present invention.
  • the present invention provides a method for fabricating a TFT substrate, including the following steps:
  • step S1 a base substrate 1 is provided, a TFT layer 2 is formed on the base substrate 1 by a first mask and a second mask process, and the passivation layer 3 is covered on the TFT layer 2.
  • the step S1 specifically includes:
  • Step S11 referring to FIG. 1, a substrate 1 is provided, formed on the substrate 1 a first metal layer, the first metal layer is patterned by a first mask to form a gate electrode 21;
  • Step S12 please refer to FIG. 2, covering the gate electrode 21 and the substrate 1 over the gate insulating layer 22;
  • Step S13 referring to FIG. 3, a semiconductor layer 23' and a second metal layer 24' are formed on the gate insulating layer 22;
  • Step S14 referring to FIG. 4, a photoresist 26 is coated on the second metal layer 24', and the photoresist 26 is patterned by a second mask to thin the channel of the thin film transistor to be formed.
  • Step S15 referring to FIG. 5, performing a first etching to remove the second metal layer 24' and the semiconductor layer 23' without the photoresist 26;
  • Step S16 please refer to FIG. 6, the entire photoresist 26 is subjected to an overall thinning process to remove the photoresist 26 on the channel region of the thin film transistor to be formed;
  • Step S17 referring to FIG. 7, performing a second etching to remove the second metal layer 24' on the channel region of the thin film transistor to be formed, removing the remaining photoresist 26, obtaining the active layer 23, and respectively
  • the source layer 24 and the drain 25 of the active layer 23 are contacted to form the TFT layer 2;
  • Step S18 referring to FIG. 8, the passivation layer 3 is covered on the TFT layer 2.
  • the material of the first metal layer and the second metal layer 24' is a combination of one or more of aluminum, molybdenum, and copper
  • the materials of the gate insulating layer 22 and the passivation layer 3 are One or a combination of silicon oxide (SiOx) and silicon nitride (SiNx)
  • the base substrate 1 is a glass substrate
  • the active layer 23 is amorphous silicon, polycrystalline silicon, or an oxide semiconductor semiconductors.
  • the second reticle is a gray scale reticle or a halftone reticle.
  • Step S2 please refer to FIG. 9, forming a photoresist layer 4 and a pixel electrode via 5 through a third mask process;
  • the material of the photoresist layer 4 contains a pigment which can be crystallized, the photoresist layer 4 is formed on the passivation layer 3, and the pattern of the photoresist layer 4 and the pixel electrode to be formed The pattern corresponds, and a plurality of burr crystals 41 are formed on the surface of the photoresist layer 4; the pixel electrode via 5 penetrates through the passivation layer 3 and exposes a portion of the TFT layer 2.
  • the step S2 includes:
  • Step S21 coating a photoresist material containing a crystallizable pigment on the passivation layer 3, vacuum drying and pre-baking the photoresist material to form a photoresist film;
  • Step S22 the photoresist film is exposed, developed and post-baked, removing the photoresist film to be formed in the pixel electrode region to form a photoresist layer 4;
  • Step S23 etching the passivation layer 3 to form a pixel electrode via 5.
  • the developed photoresist film is further subjected to UV illumination.
  • the UV light causes the crystallizable precipitate to precipitate better to form a plurality of burr crystals 41.
  • the source of the UV light is deep ultraviolet light (DUV) or extreme ultraviolet light (EUV)
  • the step S22 The post-baking temperature is 230 to 260 ° C and the duration is 20 to 40 minutes.
  • the surface of the photoresist layer 4 can naturally form a plurality of burr crystals 41, preferably,
  • the crystallizable pigment is a PR254 pigment.
  • the pixel electrode via 5 exposes a portion of the drain 25.
  • Step S3 referring to FIG. 10, a pixel electrode film 61 is formed on the passivation layer 3, the photoresist layer 4, and the pixel electrode via 5.
  • the surface of the photoresist layer 4 can naturally form a plurality of burr crystals 41, the surface of the photoresist electrode layer 4 cannot be completely densely formed after the pixel electrode film 61 is formed.
  • Step S4 referring to FIG. 11, the photoresist layer 4 is etched by the stripping solution, and the photoresist layer 4 and the pixel electrode film 61 on the photoresist layer 4 are peeled off to form the pixel electrode 6.
  • the stripping liquid can penetrate the photoresist layer 4 through the burr crystal 41 to etch the photoresist layer 4 to complete the photoresist layer. 4 and peeling of the pixel electrode film 61 on the photoresist layer 4.
  • the pixel electrode 6 is electrically connected to the drain 25 through the pixel electrode via 5.
  • the material of the pixel electrode 6 is Indium tin oxide (ITO).
  • the present invention provides a method for fabricating a TFT substrate by forming a photoresist layer using a photoresist material containing a crystallizable pigment to form a plurality of burr crystals on the surface of the photoresist layer.
  • the pixel electrode film cannot completely cover the surface of the photoresist layer, and the stripping liquid can penetrate the photoresist layer through the burr crystal to etch the photoresist layer, thereby simultaneously stripping the photoresist layer and the photoresist layer.
  • the pixel electrode film is obtained as a pixel electrode.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明提供一种TFT基板的制作方法。该方法通过采用含有可结晶析出的颜料的光刻胶材料形成光刻胶层，使得光刻胶层的表面形成若干毛刺结晶物，进而使得像素电极薄膜无法完全覆盖光刻胶层的表面，剥离液可以通过毛刺结晶物渗透到光刻胶层中对光刻胶层进行腐蚀，从而同时剥离光刻胶层及光刻胶层上的像素电极薄膜，得到像素电极，相比于现有技术，进行离地剥离时无需采用特别的光罩和光罩参数，也不需要进行等离子处理，能够简化TFT基板的制作流程，提升TFT基板的生产效率。

Description

TFT基板的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板的制作方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
通常液晶显示面板由彩膜(CF，Color Filter)基板、薄膜晶体管(TFT，Thin Film Transistor)基板、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
现有的TFT基板的制作方法已从最初的7光罩(7Mask)技术逐渐发展到4光罩(4Mask，4M)技术，4个光罩分别用于形成：图案化的栅极、图案化的有源层和源/漏极、像素电极过孔、及图案化的像素电极，与此同时，为了进一步减化TFT基板的制作工艺，缩短生产时间，提升生产效率，3光罩技术(3Mask，3M)也已经开始在部分产品上使用，采用3光罩技术制作TFT基板的制程过程一般包括：在衬底基板上通过第一道光罩制程制作图案化的栅极，在所述栅极和衬底基板上覆盖栅极绝缘层，通过第二道光罩制程同时制作图案化的有源层和源/漏极，在所述有源层和源/漏极上覆盖钝化层，通过第三道光罩制程在所述钝化层上制作像素电极过孔和图案化的光刻胶层，在所述光刻胶层和钝化层上涂布像素电极材料，通过离地剥离(Lift Off)工艺剥离光刻胶层以及光刻胶层上的像素电极材料，制得图案化的像素电极。其中，第二道光罩与第三道光罩均为灰阶光罩(Gray Tone Mask，GTM)或半色调光罩(Half Tone Mask，HTM)。
其中，离地剥离(Lift Off)技术是从4光罩技术进步到3光罩技术的 关键，所谓离地剥离技术指的是一种能够将光刻胶和光刻胶上所沉积薄膜一起剥离而不撕裂或损坏基板上的薄膜图形的技术。具体到三光罩技术就是能够将光刻胶(Photoresist，PR)和光刻胶上的像素电极薄膜同时剥离并留下图案化的像素电极的技术。目前，实现这种光刻胶和光刻胶上的像素电极薄膜同时剥离的方法有两种：第一种是通过特殊的灰阶光罩或半色调光罩，搭配特别的光刻制程参数，使得部分区域的光刻胶形成底切(Undercut)，剥离液从底切的部位使光刻胶和光刻胶上的像素电极薄膜剥离；第二种，光刻胶层形成后，像素电极薄膜形成前，通过对光刻胶层的表面专门做等离子(plasma)处理，使得光刻胶层的表面形成凹凸不平的膜面，从而剥离液可以从该凹凸不平的膜面使光刻胶和光刻胶上的像素电极薄膜剥离，上述的两种方法第一种需要采用特殊的灰阶光罩或半色调光罩和特别的光刻制程参数，第二种需要对光刻胶层的表面专门进行等离子处理，制作过程都十分繁琐，生产时间长，生产效率低。
发明内容
本发明的目的在于提供一种TFT基板的制作方法，能够简化TFT基板的制作流程，提升TFT基板的生产效率。
为实现上述目的，本发明提供了一种TFT基板的制作方法，包括如下步骤：
步骤S1、提供一衬底基板，通过第一道光罩和第二道光罩制程在所述衬底基板上形成TFT层，在所述TFT层上覆盖钝化层；
步骤S2、通过第三道光罩制程形成光刻胶层和像素电极过孔；
所述光刻胶层的材料中含有可结晶析出的颜料，所述光刻胶层形成于所述钝化层上，所述光刻胶层的图案与待形成的像素电极的图案相对应，且所述光刻胶层表面形成有若干毛刺结晶物；所述像素电极过孔贯穿所述钝化层并暴露出所述TFT层的一部分；
步骤S3、在所述钝化层、光刻胶层以及像素电极过孔上形成像素电极薄膜；
步骤S4、通过剥离液腐蚀光刻胶层，剥离所述光刻胶层以及光刻胶层上的像素电极薄膜，形成像素电极。
所述步骤S1具体包括：
步骤S11、提供一衬底基板，在所述衬底基板上形成第一金属层，通过第一道光罩图案化所述第一金属层，形成栅极；
步骤S12、在所述栅极和衬底基板上覆盖栅极绝缘层；
步骤S13、在所述栅极绝缘层上形成层叠设置的半导体层及第二金属层；
步骤S14、在所述第二金属层上涂布光刻胶，通过第二道光罩对所述光刻胶进行图案化，减薄待形成薄膜晶体管的沟道区上的光刻胶的厚度，去除待形成薄膜晶体管的区域以外的光刻胶；
步骤S15、进行第一次蚀刻，去除没有光刻胶覆盖的第二金属层和半导体层；
步骤S16、对剩余的光刻胶进行整体减薄处理，去除待形成薄膜晶体管的沟道区上的光刻胶；
步骤S17、进行第二次蚀刻，去除待形成薄膜晶体管的沟道区上的第二金属层，去除剩余的光刻胶，得到有源层以及分别与所述有源层的两端接触的源极和漏极，形成所述TFT层；
步骤S18，在所述TFT层上覆盖钝化层。
所述步骤S2具体包括：
步骤S21、在所述钝化层上涂布含有可结晶析出的颜料的光刻胶材料，对所述光刻胶材料进行真空干燥和预烘烤，形成一光刻胶薄膜；
步骤S22、对所述光刻胶薄膜进行曝光、显影和后烘烤，去除待形成像素电极区域的光刻胶薄膜，形成光刻胶层；
步骤S23、对所述钝化层进行蚀刻，形成像素电极过孔。
所述步骤S22中还对显影后的光刻胶薄膜进行UV光照。
所述步骤S22中后烘烤的温度为230～260℃，时长为20～40分钟。
所述可结晶析出的颜料为PR254颜料。
所述第二道光罩为灰阶光罩或半色调光罩。
所述步骤S3中，所述像素电极过孔暴露所述漏极的部分。
所述步骤S4中，所述像素电极通过所述像素电极过孔与所述漏极电性连接。
所述像素电极的材料为ITO。
本发明还提供一种TFT基板的制作方法，包括如下步骤：
步骤S1、提供一衬底基板，通过第一道光罩和第二道光罩制程在所述衬底基板上形成TFT层，在所述TFT层上覆盖钝化层；
步骤S2、通过第三道光罩制程形成光刻胶层和像素电极过孔；
所述光刻胶层的材料中含有可结晶析出的颜料，所述光刻胶层形成于所述钝化层上，所述光刻胶层的图案与待形成的像素电极的图案相对应，且所述光刻胶层表面形成有若干毛刺结晶物；所述像素电极过孔贯穿所述钝化层并暴露出所述TFT层的一部分；
步骤S3、在所述钝化层、光刻胶层以及像素电极过孔上形成像素电极薄膜；
步骤S4、通过剥离液腐蚀光刻胶层，剥离所述光刻胶层以及光刻胶层上的像素电极薄膜，形成像素电极；
其中，所述第二道光罩为灰阶光罩或半色调光罩；
其中，所述像素电极的材料为ITO。
本发明的有益效果：本发明提供了一种TFT基板的制作方法，通过采用含有可结晶析出的颜料的光刻胶材料形成光刻胶层，使得光刻胶层的表面形成若干毛刺结晶物，进而使得像素电极薄膜无法完全覆盖光刻胶层的表面，剥离液可以通过毛刺结晶物渗透到光刻胶层中对光刻胶层进行腐蚀，从而同时剥离光刻胶层及光刻胶层上的像素电极薄膜，得到像素电极，相比于现有技术，进行离地剥离时无需采用特别的光罩和光罩参数，也不需要进行等离子处理，能够简化TFT基板的制作流程，提升TFT基板的生产效率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1至图8为本发明的TFT基板的制作方法的步骤S1的示意图；
图9为本发明的TFT基板的制作方法的步骤S2的示意图；
图10为本发明的TFT基板的制作方法的步骤S3的示意图；
图11为本发明的TFT基板的制作方法的步骤S4的示意图；
图12为本发明的TFT基板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图12，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤S1、提供一衬底基板1，通过第一道光罩和第二道光罩制程在所述衬底基板1上形成TFT层2，在所述TFT层2上覆盖钝化层3。
具体地，请参阅图1至图8，所述步骤S1具体包括：
步骤S11、请参阅图1，提供一衬底基板1，在所述衬底基板1上形成 第一金属层，通过第一道光罩图案化所述第一金属层，形成栅极21；
步骤S12、请参阅图2，在所述栅极21和衬底基板1上覆盖栅极绝缘层22；
步骤S13、请参阅图3，在所述栅极绝缘层22上形成层叠设置的半导体层23’及第二金属层24’；
步骤S14、请参阅图4，在所述第二金属层24’上涂布光刻胶26，通过第二道光罩对所述光刻胶26进行图案化，减薄待形成薄膜晶体管的沟道区上的光刻胶26的厚度，去除待形成薄膜晶体管的区域以外的光刻胶26；
步骤S15、请参阅图5，进行第一次蚀刻，去除没有光刻胶26覆盖的第二金属层24’和半导体层23’；
步骤S16、请参阅图6，对剩余的光刻胶26进行整体减薄处理，去除待形成薄膜晶体管的沟道区上的光刻胶26；
步骤S17、请参阅图7，进行第二次蚀刻，去除待形成薄膜晶体管的沟道区上的第二金属层24’，去除剩余的光刻胶26，得到有源层23以及分别与所述有源层23的两端接触的源极24和漏极25，形成所述TFT层2；
步骤S18，请参阅图8，在所述TFT层2上覆盖钝化层3。
优选地，所述第一金属层和第二金属层24’的材料为铝、钼、及铜中的一种或多种的组合，所述栅极绝缘层22和钝化层3的材料为氧化硅(SiOx)和氮化硅(SiNx)中的一种或二者的组合，所述衬底基板1为玻璃基板，所述有源层23为非晶硅、多晶硅、或氧化物半导体等半导体材料。所述第二道光罩为灰阶光罩或半色调光罩。
步骤S2、请参阅图9，通过第三道光罩制程形成光刻胶层4和像素电极过孔5；
所述光刻胶层4的材料中含有可结晶析出的颜料，所述光刻胶层4形成于所述钝化层3上，所述光刻胶层4的图案与待形成的像素电极的图案相对应，且所述光刻胶层4表面形成有若干毛刺结晶物41；所述像素电极过孔5贯穿所述钝化层3并暴露出所述TFT层2的一部分。
具体地，所述步骤S2包括：
步骤S21、在所述钝化层3上涂布含有可结晶析出的颜料的光刻胶材料，对所述光刻胶材料进行真空干燥和预烘烤，形成一光刻胶薄膜；
步骤S22、对所述光刻胶薄膜进行曝光、显影和后烘烤，去除待形成像素电极区域的光刻胶薄膜，形成光刻胶层4；
步骤S23、对所述钝化层3进行蚀刻，形成像素电极过孔5。
具体地，所述步骤S22中还对显影后的光刻胶薄膜进行UV光照，通 过UV光照使得可结晶析出的颜料更好的析出，以形成若干毛刺结晶物41，优选地，所述UV光照的光源为深紫外光(DUV)或极紫外光(EUV)，所述步骤S22中后烘烤的温度为230～260℃，时长为20～40分钟。
需要说明的是，通过在现有的光刻胶材料中加入可结晶析出的颜料，使得经过第三道光罩制程之后，光刻胶层4的表面可以自然形成若干毛刺结晶物41，优选地，所述可结晶析出的颜料为PR254颜料。
具体地，所述步骤S2中，所述像素电极过孔5暴露所述漏极25的部分。
步骤S3、请参阅图10，在所述钝化层3、光刻胶层4以及像素电极过孔5上形成像素电极薄膜61。
值得一提的是，由于光刻胶层4的表面可以自然形成若干毛刺结晶物41，所述像素电极薄膜61形成后无法完全致密的覆盖光刻胶层4的表面。
步骤S4、请参阅图11，通过剥离液腐蚀光刻胶层4，剥离所述光刻胶层4以及光刻胶层4上的像素电极薄膜61，形成像素电极6。
具体地，由于像素电极薄膜61无法完全致密的覆盖光刻胶层4的表面，使得剥离液可以通过毛刺结晶物41渗透到光刻胶层4腐蚀光刻胶层4，以完成光刻胶层4和光刻胶层4上的像素电极薄膜61的剥离。
具体地，所述步骤S4中，所述像素电极6通过所述像素电极过孔5与所述漏极25电性连接。优选地，所述像素电极6的材料为氧化铟锡(Indium tin oxide，ITO)。
综上所述，本发明提供了一种TFT基板的制作方法，通过采用含有可结晶析出的颜料的光刻胶材料形成光刻胶层，使得光刻胶层的表面形成若干毛刺结晶物，进而使得像素电极薄膜无法完全覆盖光刻胶层的表面，剥离液可以通过毛刺结晶物渗透到光刻胶层中对光刻胶层进行腐蚀，从而同时剥离光刻胶层及光刻胶层上的像素电极薄膜，得到像素电极，相比于现有技术，进行离地剥离时无需采用特别的光罩和光罩参数，也不需要进行等离子处理，能够简化TFT基板的制作流程，提升TFT基板的生产效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (18)

  1. 一种TFT基板的制作方法，包括如下步骤：
    步骤S1、提供一衬底基板，通过第一道光罩和第二道光罩制程在所述衬底基板上形成TFT层，在所述TFT层上覆盖钝化层；
    步骤S2、通过第三道光罩制程形成光刻胶层和像素电极过孔；
    所述光刻胶层的材料中含有可结晶析出的颜料，所述光刻胶层形成于所述钝化层上，所述光刻胶层的图案与待形成的像素电极的图案相对应，且所述光刻胶层表面形成有若干毛刺结晶物；所述像素电极过孔贯穿所述钝化层并暴露出所述TFT层的一部分；
    步骤S3、在所述钝化层、光刻胶层以及像素电极过孔上形成像素电极薄膜；
    步骤S4、通过剥离液腐蚀光刻胶层，剥离所述光刻胶层以及光刻胶层上的像素电极薄膜，形成像素电极。
  2. 如权利要求1所述的TFT基板的制作方法，其中，所述步骤S1具体包括：
    步骤S11、提供一衬底基板，在所述衬底基板上形成第一金属层，通过第一道光罩图案化所述第一金属层，形成栅极；
    步骤S12、在所述栅极和衬底基板上覆盖栅极绝缘层；
    步骤S13、在所述栅极绝缘层上形成层叠设置的半导体层及第二金属层；
    步骤S14、在所述第二金属层上涂布光刻胶，通过第二道光罩对所述光刻胶进行图案化，减薄待形成薄膜晶体管的沟道区上的光刻胶的厚度，去除待形成薄膜晶体管的区域以外的光刻胶；
    步骤S15、进行第一次蚀刻，去除没有光刻胶覆盖的第二金属层和半导体层；
    步骤S16、对剩余的光刻胶进行整体减薄处理，去除待形成薄膜晶体管的沟道区上的光刻胶；
    步骤S17、进行第二次蚀刻，去除待形成薄膜晶体管的沟道区上的第二金属层，去除剩余的光刻胶，得到有源层以及分别与所述有源层的两端接触的源极和漏极，形成所述TFT层；
    步骤S18，在所述TFT层上覆盖钝化层。
  3. 如权利要求1所述的TFT基板的制作方法，其中，所述步骤S2具体包括：
    步骤S21、在所述钝化层上涂布含有可结晶析出的颜料的光刻胶材料，对所述光刻胶材料进行真空干燥和预烘烤，形成一光刻胶薄膜；
    步骤S22、对所述光刻胶薄膜进行曝光、显影和后烘烤，去除待形成像素电极区域的光刻胶薄膜，形成光刻胶层；
    步骤S23、对所述钝化层进行蚀刻，形成像素电极过孔。
  4. 如权利要求3所述的TFT基板的制作方法，其中，所述步骤S22中还对显影后的光刻胶薄膜进行UV光照。
  5. 如权利要求3所述的TFT基板的制作方法，其中，所述步骤S22中后烘烤的温度为230～260℃，时长为20～40分钟。
  6. 如权利要求1所述的TFT基板的制作方法，其中，所述可结晶析出的颜料为PR254颜料。
  7. 如权利要求1所述的TFT基板的制作方法，其中，所述第二道光罩为灰阶光罩或半色调光罩。
  8. 如权利要求2所述的TFT基板的制作方法，其中，所述步骤S3中，所述像素电极过孔暴露所述漏极的部分。
  9. 如权利要求8所述的TFT基板的制作方法，其中，所述步骤S4中，所述像素电极通过所述像素电极过孔与所述漏极电性连接。
  10. 如权利要求1所述的TFT基板的制作方法，其中，所述像素电极的材料为ITO。
  11. 一种TFT基板的制作方法，包括如下步骤：
    步骤S1、提供一衬底基板，通过第一道光罩和第二道光罩制程在所述衬底基板上形成TFT层，在所述TFT层上覆盖钝化层；
    步骤S2、通过第三道光罩制程形成光刻胶层和像素电极过孔；
    所述光刻胶层的材料中含有可结晶析出的颜料，所述光刻胶层形成于所述钝化层上，所述光刻胶层的图案与待形成的像素电极的图案相对应，且所述光刻胶层表面形成有若干毛刺结晶物；所述像素电极过孔贯穿所述钝化层并暴露出所述TFT层的一部分；
    步骤S3、在所述钝化层、光刻胶层以及像素电极过孔上形成像素电极薄膜；
    步骤S4、通过剥离液腐蚀光刻胶层，剥离所述光刻胶层以及光刻胶层上的像素电极薄膜，形成像素电极；
    其中，所述第二道光罩为灰阶光罩或半色调光罩；
    其中，所述像素电极的材料为ITO。
  12. 如权利要求11所述的TFT基板的制作方法，其中，所述步骤S1 具体包括：
    步骤S11、提供一衬底基板，在所述衬底基板上形成第一金属层，通过第一道光罩图案化所述第一金属层，形成栅极；
    步骤S12、在所述栅极和衬底基板上覆盖栅极绝缘层；
    步骤S13、在所述栅极绝缘层上形成层叠设置的半导体层及第二金属层；
    步骤S14、在所述第二金属层上涂布光刻胶，通过第二道光罩对所述光刻胶进行图案化，减薄待形成薄膜晶体管的沟道区上的光刻胶的厚度，去除待形成薄膜晶体管的区域以外的光刻胶；
    步骤S15、进行第一次蚀刻，去除没有光刻胶覆盖的第二金属层和半导体层；
    步骤S16、对剩余的光刻胶进行整体减薄处理，去除待形成薄膜晶体管的沟道区上的光刻胶；
    步骤S17、进行第二次蚀刻，去除待形成薄膜晶体管的沟道区上的第二金属层，去除剩余的光刻胶，得到有源层以及分别与所述有源层的两端接触的源极和漏极，形成所述TFT层；
    步骤S18，在所述TFT层上覆盖钝化层。
  13. 如权利要求11所述的TFT基板的制作方法，其中，所述步骤S2具体包括：
    步骤S21、在所述钝化层上涂布含有可结晶析出的颜料的光刻胶材料，对所述光刻胶材料进行真空干燥和预烘烤，形成一光刻胶薄膜；
    步骤S22、对所述光刻胶薄膜进行曝光、显影和后烘烤，去除待形成像素电极区域的光刻胶薄膜，形成光刻胶层；
    步骤S23、对所述钝化层进行蚀刻，形成像素电极过孔。
  14. 如权利要求13所述的TFT基板的制作方法，其中，所述步骤S22中还对显影后的光刻胶薄膜进行UV光照。
  15. 如权利要求13所述的TFT基板的制作方法，其中，所述步骤S22中后烘烤的温度为230～260℃，时长为20～40分钟。
  16. 如权利要求11所述的TFT基板的制作方法，其中，所述可结晶析出的颜料为PR254颜料。
  17. 如权利要求12所述的TFT基板的制作方法，其中，所述步骤S3中，所述像素电极过孔暴露所述漏极的部分。
  18. 如权利要求17所述的TFT基板的制作方法，其中，所述步骤S4中，所述像素电极通过所述像素电极过孔与所述漏极电性连接。
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CN101630640A (zh) * 2008-07-18 2010-01-20 北京京东方光电科技有限公司 光刻胶毛刺边缘形成方法和tft-lcd阵列基板制造方法
CN105914183A (zh) * 2016-06-22 2016-08-31 深圳市华星光电技术有限公司 Tft基板的制造方法

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CN101630640A (zh) * 2008-07-18 2010-01-20 北京京东方光电科技有限公司 光刻胶毛刺边缘形成方法和tft-lcd阵列基板制造方法
CN105914183A (zh) * 2016-06-22 2016-08-31 深圳市华星光电技术有限公司 Tft基板的制造方法

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